WO2020241295A1 - Substrate processing method and substrate processing apparatus - Google Patents

Substrate processing method and substrate processing apparatus Download PDF

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Publication number
WO2020241295A1
WO2020241295A1 PCT/JP2020/019380 JP2020019380W WO2020241295A1 WO 2020241295 A1 WO2020241295 A1 WO 2020241295A1 JP 2020019380 W JP2020019380 W JP 2020019380W WO 2020241295 A1 WO2020241295 A1 WO 2020241295A1
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WO
WIPO (PCT)
Prior art keywords
substrate
seed layer
resin material
plating
recess
Prior art date
Application number
PCT/JP2020/019380
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French (fr)
Japanese (ja)
Inventor
智規 江▲崎▼
裕一郎 稲富
Original Assignee
東京エレクトロン株式会社
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Application filed by 東京エレクトロン株式会社 filed Critical 東京エレクトロン株式会社
Publication of WO2020241295A1 publication Critical patent/WO2020241295A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/18—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Definitions

  • the present disclosure relates to a substrate processing method and a substrate processing apparatus.
  • plating is used as a method of embedding a metal such as copper in a recess such as a trench or a via.
  • defects such as voids and seams may be formed in the recess because the opening of the recess is closed by the plating film before the entire recess is filled with the plating film.
  • a technique has been proposed in which an inhibitor for suppressing the metal deposition rate at the upper portion of the recess and an accelerator for promoting the metal deposition rate at the bottom of the recess are added to the plating solution.
  • the present disclosure provides a technique capable of embedding metal in a recess without causing defects such as voids and seams.
  • the substrate processing method includes a preparation step, an embedding step, a surface seed layer removing step, a resin material removing step, and a plating step.
  • a substrate having recesses formed on the surface and a seed layer formed on the surface and the inner surface of the recesses is prepared.
  • a resin material is embedded in the recess.
  • the surface seed layer removing step removes the seed layer formed on the surface of the substrate while protecting the seed layer formed on the inner surface of the recess with a resin material.
  • the resin material removing step the resin material embedded in the recess is removed after the surface seed layer removing step.
  • a plating film is formed in the recesses by an electroless plating method, and the recesses are filled with the plating film.
  • metal can be embedded in the recess without causing defects such as voids and seams.
  • FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment.
  • FIG. 2 is a diagram showing a configuration of a pretreatment unit according to an embodiment.
  • FIG. 3 is a diagram showing a configuration of a plating processing unit according to an embodiment.
  • FIG. 4 is a flowchart showing a processing procedure executed by the substrate processing apparatus according to the embodiment.
  • FIG. 5 is a flowchart showing the procedure of the electroless plating process according to the embodiment.
  • FIG. 6 is a diagram showing an example of a substrate before processing by the substrate processing apparatus.
  • FIG. 7 is a diagram showing an example of the substrate after the protective film forming treatment.
  • FIG. 8 is a diagram showing an example of the substrate after the surface seed layer exposure treatment.
  • FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment.
  • FIG. 2 is a diagram showing a configuration of a pretreatment unit according to an embodiment.
  • FIG. 3 is a diagram showing a
  • FIG. 9 is a diagram showing an example of the substrate after the surface seed layer removal treatment.
  • FIG. 10 is a diagram showing an example of the substrate after the protective film removal treatment.
  • FIG. 11 is a diagram showing an example of the substrate after the electroless plating treatment.
  • FIG. 12 is a diagram showing a configuration of a substrate processing apparatus according to a modified example.
  • FIG. 13 is a diagram showing a configuration of a second pretreatment unit according to a modified example.
  • FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment.
  • the substrate processing device 1 includes a loading / unloading station 2 and a processing station 3.
  • the loading / unloading station 2 and the processing station 3 are provided adjacent to each other.
  • the loading / unloading station 2 includes a carrier mounting table 11 and a transport section 12.
  • a plurality of substrates, in the present embodiment, a plurality of carriers C for accommodating a semiconductor wafer (hereinafter, substrate W) in a horizontal state are mounted on the carrier mounting table 11.
  • a plurality of load ports are arranged side by side on the carrier mounting table 11 so as to be adjacent to the transport unit 12, and one carrier C is mounted on each of the plurality of load ports.
  • the transport unit 12 is provided adjacent to the carrier mounting table 11, and includes a substrate transport device 13 and a delivery unit 14 inside.
  • the substrate transfer device 13 includes a wafer holding mechanism for holding the substrate W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the substrate W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. Do.
  • the processing station 3 is provided adjacent to the transport unit 12.
  • the processing station 3 includes a transport unit 15, a plurality of pretreatment units 4, and a plurality of plating processing units 5.
  • the plurality of pretreatment units 4 and plating processing units 5 are provided side by side on both sides of the transport unit 15.
  • the plurality of pretreatment units 4 are provided on the Y-axis positive direction side of the transport unit 15, and the plurality of plating processing units 5 are provided on the Y-axis negative direction side of the transport unit 15.
  • the configurations of the pretreatment section 4 and the plating treatment section 5 will be described later.
  • the transport unit 15 includes a substrate transport device 17 inside.
  • the substrate transfer device 17 includes a wafer holding mechanism for holding the substrate W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and uses a wafer holding mechanism between the delivery unit 14, the pretreatment unit 4, and the plating processing unit 5. The substrate W is transported.
  • the substrate processing device 1 includes a control device 9.
  • the control device 9 is, for example, a computer, and includes a control unit 91 and a storage unit 92.
  • the storage unit 92 stores programs that control various processes executed in the substrate processing device 1.
  • the control unit 91 controls the operation of the substrate processing device 1 by reading and executing the program stored in the storage unit 92.
  • Such a program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 92 of the control device 9.
  • Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
  • the board transfer device 13 of the loading / unloading station 2 takes out the board W from the carrier C mounted on the carrier mounting table 11, and delivers the taken out board W to the delivery unit. Place on 14.
  • the substrate W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the preprocessing unit 4.
  • the substrate W carried into the pretreatment unit 4 is processed by the pretreatment unit 4. Although the details will be described later, the pretreatment unit 4 performs a predetermined liquid treatment on the substrate W prior to the treatment by the plating processing unit 5.
  • the substrate W processed by the pretreatment unit 4 is conveyed from the pretreatment unit 4 to the plating processing unit 5 by the substrate transfer device 17, and is processed by the plating processing unit 5.
  • recesses such as trenches and vias are formed on the surface of the substrate W, and the plating processing unit 5 embeds metal in the recesses by an electroless plating method.
  • the substrate W processed by the plating processing unit 5 is carried out from the plating processing unit 5 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed substrate W mounted on the delivery unit 14 is returned to the carrier C of the carrier mounting table 11 by the substrate transport device 13.
  • FIG. 2 is a diagram showing the configuration of the pretreatment unit 4 according to the embodiment.
  • the pretreatment unit 4 includes a chamber 110, a substrate holding mechanism 120, a liquid supply unit 130, a heating unit 140, and a cup 150.
  • the chamber 110 houses the substrate holding mechanism 120, the liquid supply unit 130, the heating unit 140, and the cup 150.
  • An FFU (Fan Filter Unit) 111 is provided on the ceiling of the chamber 110.
  • the FFU 111 forms a downflow in the chamber 110.
  • the board holding mechanism 120 includes a holding portion 121, a strut portion 122, and a driving portion 123.
  • the holding portion 121 holds the substrate W horizontally.
  • the holding portion 121 includes a plurality of grip portions 121a, and grips the peripheral edge portion of the substrate W using the plurality of grip portions 121a.
  • the strut portion 122 extends in the vertical direction, the base end portion is rotatably supported by the drive portion 123, and the holding portion 121 is horizontally supported at the tip end portion.
  • the drive unit 123 rotates the support unit 122 around the vertical axis.
  • the substrate holding mechanism 120 rotates the holding portion 121 supported by the supporting portion 122 by rotating the supporting portion 122 by using the driving unit 123, thereby rotating the substrate W held by the holding portion 121. ..
  • the holding unit 121 may be a type of holding unit that attracts and holds the substrate W, such as a vacuum chuck or an electrostatic chuck.
  • the liquid supply unit 130 supplies various processing liquids to the substrate W held by the substrate holding mechanism 120.
  • the liquid supply unit 130 includes a first nozzle 131, a second nozzle 132, a third nozzle 133, and a fourth nozzle 134. Further, the liquid supply unit 130 includes an arm 135 that supports the first to fourth nozzles 131 to 134, and a moving mechanism 136 that moves the arm 135.
  • the first nozzle 131 is connected to the resin material supply source 138a via the first valve 137a, and discharges the resin material supplied from the resin material supply source 138a.
  • the resin material for example, a top coat liquid for forming a top coat film, a polyimide liquid for forming a polyimide film, a resist liquid for forming a resist film, and the like are used.
  • the second nozzle 132 is connected to the first removal liquid supply source 138b via the second valve 137b, and discharges the first removal liquid supplied from the first removal liquid supply source 138b.
  • the first removing liquid is, for example, an organic solvent such as PGMEA (propylene glycol monomethyl ether acetate) and NMP (N-methylpyrrolidone), and is used for removing the protective film formed on the substrate W.
  • the third nozzle 133 is connected to the second removal liquid supply source 138c via the third valve 137c, and discharges the second removal liquid supplied from the second removal liquid supply source 138c.
  • the second removing liquid is, for example, SPM (hydrogen peroxide solution aqueous solution) or FPM (hydrogen peroxide solution aqueous solution), and is used for removing the seed layer formed on the substrate W.
  • SPM and FPM may be diluted.
  • the fourth nozzle 134 is connected to the rinse liquid supply source 138d via the fourth valve 137d, and discharges the rinse liquid supplied from the rinse liquid supply source 138d.
  • the rinse solution is, for example, DIW (deionized water).
  • the heating unit 140 is built in, for example, the holding unit 121, and heats the substrate W held by the holding unit 121.
  • the heating unit 140 is used for a baking process for heating the resin material supplied on the substrate W.
  • the heating unit 140 does not necessarily have to be provided in the holding unit 121.
  • the heating unit 140 may be provided on a top plate arranged above the substrate W held by the holding unit 121. Further, the heating unit 140 does not necessarily have to be provided inside the pretreatment unit 4. That is, the heating unit 140 may be provided separately from the pretreatment unit 4.
  • the cup 150 is arranged so as to surround the holding portion 121, and collects the processing liquid scattered from the substrate W by the rotation of the holding portion 121.
  • a drainage port 151 is formed at the bottom of the cup 150, and the treatment liquid collected by the cup 150 is discharged from the drainage port 151 to the outside of the pretreatment section 4. Further, at the bottom of the cup 150, an exhaust port 152 for discharging the gas supplied from the FFU 111 to the outside of the pretreatment unit 4 is formed.
  • FIG. 3 is a diagram showing the configuration of the plating processing unit 5 according to the embodiment.
  • the plating processing unit 5 is configured to perform a liquid treatment including an electroless plating treatment.
  • the plating processing unit 5 is arranged on the chamber 51, the substrate holding portion 52 which is arranged in the chamber 51 and holds the substrate W horizontally, and the plating solution L1 on the surface (upper surface) of the substrate W held by the substrate holding portion 52. It includes a plating solution supply unit 53 (treatment liquid supply unit) for supplying (treatment liquid).
  • the substrate holding portion 52 has a chuck member 521 that vacuum-adsorbs the lower surface (back surface) of the substrate W.
  • the chuck member 521 is a so-called vacuum chuck type.
  • a rotary motor 523 (rotary drive unit) is connected to the substrate holding unit 52 via a rotary shaft 522.
  • the rotary motor 523 is driven, the substrate holding portion 52 rotates together with the substrate W.
  • the rotary motor 523 is supported by a base 524 fixed to the chamber 51.
  • a heating source such as a heater is not provided inside the substrate holding portion 52.
  • the plating solution supply unit 53 includes a plating solution nozzle 531 (treatment solution nozzle) that discharges (supplies) the plating solution L1 to the substrate W held by the substrate holding unit 52, and plating that supplies the plating solution L1 to the plating solution nozzle 531. It has a liquid supply source 532 and. Of these, the plating solution supply source 532 is configured to supply the plating solution L1 heated or temperature-controlled to a predetermined temperature to the plating solution nozzle 531 via the plating solution pipe 533. The temperature at the time of discharging the plating solution L1 from the plating solution nozzle 531 is, for example, 55 ° C. or higher and 75 ° C. or lower, and more preferably 60 ° C. or higher and 70 ° C. or lower.
  • the plating solution nozzle 531 is held by the nozzle arm 56 and is configured to be movable.
  • the plating solution L1 is a plating solution for autocatalytic (reduction type) electroless plating.
  • the plating solution L1 contains, for example, a metal ion and a reducing agent.
  • the metal ions contained in the plating solution L1 include, for example, cobalt (Co) ion, nickel (Ni) ion, tungsten (W) ion, copper (Cu) ion, palladium (Pd) ion, gold (Au) ion, and ruthenium ( Ru) Ions and the like.
  • the reducing agent contained in the plating solution L1 is hypophosphorous acid, dimethylamine borane, glyoxylic acid and the like.
  • Examples of the plating film formed by the plating treatment using the plating solution L1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, Cu, Pd, Ru and the like.
  • the plating film may be formed from a single layer or may be formed over two or more layers. When the plating film has a two-layer structure, it may have a layer structure such as CoWB / CoB and Pd / CoB in order from the base metal layer (seed layer) side.
  • the plating processing unit 5 includes a cleaning liquid supply unit 54 that supplies the cleaning liquid L2 to the surface of the substrate W held by the substrate holding unit 52, and a rinse liquid supply unit 55 that supplies the rinse liquid L3 to the surface of the substrate W. Further prepared.
  • the cleaning liquid supply unit 54 supplies the cleaning liquid L2 to the rotating substrate W held by the substrate holding unit 52, and precleans the seed layer formed on the substrate W.
  • the cleaning liquid supply unit 54 has a cleaning liquid nozzle 541 that discharges the cleaning liquid L2 to the substrate W held by the substrate holding unit 52, and a cleaning liquid supply source 542 that supplies the cleaning liquid L2 to the cleaning liquid nozzle 541. ..
  • the cleaning liquid supply source 542 is configured to supply the cleaning liquid L2 heated or temperature-controlled to a predetermined temperature to the cleaning liquid nozzle 541 via the cleaning liquid pipe 543 as described later.
  • the cleaning liquid nozzle 541 is held by the nozzle arm 56 and can move together with the plating liquid nozzle 531.
  • Dicarboxylic acid or tricarboxylic acid is used as the cleaning liquid L2.
  • dicarboxylic acid for example, organic acids such as malic acid, succinic acid, malonic acid, oxalic acid, glutaric acid, adipic acid, and tartaric acid can be used.
  • tricarboxylic acid an organic acid such as citric acid can be used.
  • the rinse liquid supply unit 55 includes a rinse liquid nozzle 551 that discharges the rinse liquid L3 to the substrate W held by the substrate holding unit 52, and a rinse liquid supply source 552 that supplies the rinse liquid L3 to the rinse liquid nozzle 551. doing.
  • the rinse liquid nozzle 551 is held by the nozzle arm 56 and can move together with the plating liquid nozzle 531 and the cleaning liquid nozzle 541.
  • the rinse liquid supply source 552 is configured to supply the rinse liquid L3 to the rinse liquid nozzle 551 via the rinse liquid pipe 553.
  • the rinse liquid L3 for example, DIW or the like can be used.
  • a nozzle moving mechanism (not shown) is connected to the nozzle arm 56 that holds the plating liquid nozzle 531, the cleaning liquid nozzle 541, and the rinse liquid nozzle 551 described above.
  • This nozzle moving mechanism moves the nozzle arm 56 in the horizontal direction and the vertical direction. More specifically, the nozzle arm 56 uses the nozzle moving mechanism to move the nozzle arm 56 between a discharge position for discharging the treatment liquid (plating liquid L1, cleaning liquid L2 or rinse liquid L3) to the substrate W and a retracted position retracted from the discharge position. It is possible to move with.
  • the discharge position is not particularly limited as long as the processing liquid can be supplied to an arbitrary position on the surface of the substrate W.
  • the center of the substrate W at a position where the processing liquid can be supplied.
  • the ejection position of the nozzle arm 56 may be different depending on whether the plating solution L1 is supplied to the substrate W, the cleaning solution L2 is supplied, or the rinse solution L3 is supplied.
  • the retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above, and is a position away from the discharge position. When the nozzle arm 56 is positioned in the retracted position, it is possible to prevent the moving lid 6 from interfering with the nozzle arm 56.
  • a cup 571 is provided around the substrate holding portion 52.
  • the cup 571 is formed in a ring shape when viewed from above, and when the substrate W rotates, it receives the treatment liquid scattered from the substrate W and guides it to the drain duct 581.
  • An atmosphere blocking cover 572 is provided on the outer peripheral side of the cup 571 to prevent the atmosphere around the substrate W from diffusing into the chamber 51.
  • the atmosphere blocking cover 572 is formed in a cylindrical shape so as to extend in the vertical direction, and the upper end is open. A lid 6 to be described later can be inserted into the atmosphere blocking cover 572 from above.
  • the substrate W held by the substrate holding portion 52 is covered with the lid 6.
  • the lid 6 has a ceiling portion 61 and a side wall portion 62 extending downward from the ceiling portion 61.
  • the ceiling portion 61 includes a first ceiling plate 611 and a second ceiling plate 612 provided on the first ceiling plate 611.
  • a heater 63 (heating unit) is interposed between the first ceiling plate 611 and the second ceiling plate 612.
  • the first ceiling plate 611 and the second ceiling plate 612 are configured to seal the heater 63 so that the heater 63 does not come into contact with a treatment liquid such as the plating liquid L1.
  • a seal ring 613 is provided on the outer peripheral side of the heater 63, and the heater 63 is sealed by the seal ring 613.
  • the first ceiling plate 611 and the second ceiling plate 612 preferably have corrosion resistance to a treatment liquid such as the plating liquid L1, and may be formed of, for example, an aluminum alloy.
  • the first ceiling plate 611, the second ceiling plate 612 and the side wall portion 62 may be coated with Teflon (registered trademark).
  • a lid moving mechanism 7 is connected to the lid 6 via a lid arm 71.
  • the lid moving mechanism 7 moves the lid 6 in the horizontal direction and the vertical direction.
  • the lid moving mechanism 7 has a swivel motor 72 that moves the lid 6 in the horizontal direction, and a cylinder 73 (interval adjusting unit) that moves the lid 6 in the vertical direction. ..
  • the swivel motor 72 is mounted on a support plate 74 provided so as to be movable in the vertical direction with respect to the cylinder 73.
  • an actuator (not shown) including a motor and a ball screw may be used.
  • the swivel motor 72 of the lid moving mechanism 7 moves the lid 6 between an upper position arranged above the substrate W held by the substrate holding portion 52 and a retracted position retracted from the upper position.
  • the upper position is a position facing the substrate W held by the substrate holding portion 52 at a relatively large interval, and is a position overlapping the substrate W when viewed from above.
  • the retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above.
  • the cylinder 73 of the lid moving mechanism 7 moves the lid 6 in the vertical direction to adjust the distance between the substrate W to which the plating solution L1 is supplied and the first ceiling plate 611 of the ceiling portion 61. More specifically, the cylinder 73 positions the lid 6 at a lower position (a position shown by a solid line in FIG. 2) and an upper position (a position shown by a two-dot chain line in FIG. 2).
  • the heater 63 when the heater 63 is driven and the lid 6 is positioned at the lower position described above, the substrate holding portion 52 or the plating solution L1 on the substrate W is heated.
  • An inert gas (for example, nitrogen (N2) gas) is supplied to the inside of the lid 6 by the inert gas supply unit 66.
  • the inert gas supply unit 66 has a gas nozzle 661 that discharges the inert gas inside the lid 6, and an inert gas supply source 662 that supplies the inert gas to the gas nozzle 661.
  • the gas nozzle 661 is provided on the ceiling portion 61 of the lid body 6 and discharges an inert gas toward the substrate W with the lid body 6 covering the substrate W.
  • the ceiling portion 61 and the side wall portion 62 of the lid body 6 are covered with the lid body cover 64.
  • the lid cover 64 is placed on the second ceiling plate 612 of the lid 6 via a support portion 65. That is, a plurality of support portions 65 projecting upward from the upper surface of the second ceiling plate 612 are provided on the second ceiling plate 612, and the lid cover 64 is placed on the support portions 65.
  • the lid cover 64 can be moved in the horizontal direction and the vertical direction together with the lid 6.
  • the lid cover 64 preferably has a higher heat insulating property than the ceiling portion 61 and the side wall portion 62 in order to prevent heat in the lid body 6 from escaping to the surroundings.
  • the lid cover 64 is preferably made of a resin material, and it is even more preferable that the resin material has heat resistance.
  • the lid body 6 provided with the heater 63 and the lid body cover 64 are integrally provided, and when the lid body cover 64 is arranged at a lower position, the board holding portion 52 or the cover unit 10 covering the board W is provided. , These lids 6 and lid covers 64.
  • a fan filter unit 59 (gas supply unit) that supplies clean air (gas) around the lid 6 is provided on the upper part of the chamber 51.
  • the fan filter unit 59 supplies air into the chamber 51 (particularly, inside the atmosphere blocking cover 572), and the supplied air flows toward the exhaust pipe 81.
  • a downflow through which this air flows downward is formed around the lid 6, and the gas vaporized from the treatment liquid such as the plating liquid L1 flows toward the exhaust pipe 81 by this downflow. In this way, the vaporized gas from the treatment liquid is prevented from rising and diffusing into the chamber 51.
  • the gas supplied from the fan filter unit 59 described above is exhausted by the exhaust mechanism 8.
  • FIG. 4 is a flowchart showing a procedure of processing executed by the substrate processing apparatus 1 according to the embodiment
  • FIG. 5 is a flowchart showing a procedure of electroless plating processing according to the embodiment.
  • FIG. 6 is a diagram showing an example of the substrate W before processing by the substrate processing apparatus 1
  • FIG. 7 is a diagram showing an example of the substrate W after the protective film forming treatment
  • FIG. 8 is a surface seed. It is a figure which shows an example of the substrate W after a layer exposure process.
  • FIG. 9 is a diagram showing an example of the substrate W after the surface seed layer removal treatment
  • FIG. 9 is a diagram showing an example of the substrate W after the surface seed layer removal treatment
  • FIGS. 4 and 5 are executed according to the control by the control unit 91.
  • a protective film forming process is performed (step S101).
  • the substrate W is first carried into the pretreatment section 4.
  • the substrate W carried into the pretreatment unit 4 is held by the substrate holding mechanism 120 of the pretreatment unit 4.
  • recesses 501 such as trenches and vias are formed on the surface (upper surface) of the substrate W.
  • a barrier layer 502 and a seed layer 503 are formed on the surface of the substrate W and the inner surface of the recess 501.
  • the barrier layer 502 and the seed layer 503 are laminated on the substrate W in the order of the barrier layer 502 and the seed layer 503.
  • the barrier layer 502 and the seed layer 503 are laminated on the substrate W by, for example, sputtering.
  • the barrier layer 502 is made of, for example, titanium (Ti), titanium nitride (TiN), or the like
  • the seed layer 503 is made of, for example, a metal such as copper (Cu) or cobalt (Co).
  • the pretreatment unit 4 holds the substrate W by using the substrate holding mechanism 120, and then rotates the holding unit 121 by using the driving unit 123. As a result, the substrate W rotates together with the holding portion 121. Subsequently, the pretreatment unit 4 positions the first nozzle 131 above the center of the substrate W by moving the arm 135 using the moving mechanism 136. After that, the pretreatment unit 4 supplies the resin material from the first nozzle 131 to the central portion of the substrate W by opening the first valve 137a for a certain period of time. The resin material supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W.
  • the pretreatment unit 4 heats the resin material applied on the substrate W by heating the substrate W using the heating unit 140.
  • the heating temperature by the heating unit 140 is, for example, 90 ° C. or higher and lower than 130 ° C.
  • a protective film 504 made of resin is formed on the substrate W (see FIG. 7).
  • the surface seed layer exposure treatment is performed (step S102).
  • the pretreatment unit 4 positions the second nozzle 132 above the center of the substrate W by moving the arm 135 using the movement mechanism 136.
  • the pretreatment unit 4 supplies the first removing liquid from the second nozzle 132 to the central portion of the substrate W by opening the second valve 137b for a certain period of time.
  • the first removing solution is an organic solvent such as PEGMEA. The first removing liquid supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W.
  • the first removing liquid is supplied to the substrate W until the seed layer 503 formed on the surface of the substrate W is exposed from the protective film 504 (see FIG. 8). At this time, in the surface seed layer exposure treatment, the supply time, flow rate, concentration, etc. of the first removing liquid are adjusted so that the protective film 504 embedded in the recess 501 is not removed.
  • the protective film 504 may be recessed above the recess 501, and the protective film 504 embedded in the recess 501 is removed more than necessary in the surface seed layer exposure treatment. There is a risk. Therefore, as shown in FIG. 7, it is desirable that the protective film 504 is formed to be thick to some extent.
  • the surface seed layer removal treatment is performed (step S103).
  • the pretreatment unit 4 positions the third nozzle 133 above the center of the substrate W by moving the arm 135 using the moving mechanism 136.
  • the pretreatment unit 4 supplies the second removing liquid from the third nozzle 133 to the central portion of the substrate W by opening the third valve 137c for a certain period of time.
  • the second removing liquid is an etching liquid such as SPM or FPM.
  • the second removing liquid supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W.
  • the seed layer 503 formed on the surface of the substrate W is removed by the second removing liquid (see FIG. 9).
  • the seed layer 503 formed on the inner surface of the recess 501 is covered with the protective film 504 and remains on the substrate W because it does not come into contact with the second removing liquid.
  • the protective film removal treatment is performed (step S104).
  • the pretreatment unit 4 moves the arm 135 by using the moving mechanism 136 to position the second nozzle 132 above the center of the substrate W.
  • the pretreatment unit 4 supplies the first removing liquid from the second nozzle 132 to the central portion of the substrate W by opening the second valve 137b for a certain period of time.
  • the first removing liquid supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W.
  • the protective film 504 embedded in the recess 501 is removed (see FIG. 10).
  • the pretreatment unit 4 may perform the protective film removal treatment using an organic solvent (third removal liquid) different from the first removal liquid used in the surface seed layer exposure treatment.
  • a rinsing process is performed (step S105).
  • the pretreatment unit 4 moves the arm 135 using the moving mechanism 136 to position the fourth nozzle 134 above the center of the substrate W.
  • the pretreatment unit 4 supplies the rinse liquid from the fourth nozzle 134 to the central portion of the substrate W by opening the third valve 137c for a certain period of time.
  • the rinse liquid supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W. As a result, the first removing liquid and the protective film 504 remaining on the substrate W are washed away from the substrate W by the rinsing liquid.
  • a drying treatment is performed (step S106).
  • the pretreatment unit 4 rotates the substrate W at high speed by, for example, increasing the rotation speed of the substrate W. As a result, the rinsing liquid remaining on the substrate W is shaken off and the substrate W dries.
  • the substrate W is taken out from the pretreatment unit 4 by the substrate transfer device 17 and carried into the plating processing unit 5. Then, the electroless plating process is performed in the plating process section 5 (step S107). The procedure of the electroless plating treatment will be described with reference to FIG.
  • the substrate W carried into the plating processing unit 5 is held by the substrate holding unit 52 (step S201).
  • the lower surface of the substrate W is vacuum-sucked, and the substrate W is horizontally held by the substrate holding portion 52.
  • step S202 the substrate W held by the substrate holding portion 52 is cleaned.
  • the rotation motor 523 is driven to rotate the substrate W at a predetermined rotation speed.
  • the nozzle arm 56 positioned at the retracted position moves to the discharge position above the center of the substrate W.
  • the cleaning liquid L2 is supplied from the cleaning liquid nozzle 541 to the rotating substrate W to clean the surface of the substrate W. As a result, deposits and the like adhering to the substrate W are removed from the substrate W.
  • the cleaning liquid L2 supplied to the substrate W is discharged to the drain duct 581.
  • the cleaned substrate W is rinsed (step S203).
  • the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W, and the surface of the substrate W is rinsed. As a result, the cleaning liquid L2 remaining on the substrate W is washed away.
  • the rinse liquid L3 supplied to the substrate W is discharged to the drain duct 581.
  • the plating solution L1 is supplied and served on the rinsed substrate W (step S204).
  • the rotation speed of the substrate W is reduced to be lower than the rotation speed during the rinsing process.
  • the rotation speed of the substrate W may be 50 to 150 rpm.
  • the plating film formed on the substrate W can be made uniform.
  • the rotation of the substrate W may be stopped.
  • the plating solution L1 is discharged from the plating solution nozzle 531 to the surface of the substrate W.
  • the discharged plating solution L1 stays on the surface of the substrate W due to surface tension, and the plating solution is placed on the surface of the substrate W to form a layer (so-called paddle) of the plating solution L1.
  • a part of the plating solution L1 flows out from the surface of the substrate W and is discharged from the drain duct 581.
  • the discharge of the plating solution L1 is stopped.
  • the nozzle arm 56 which has been positioned at the discharge position, is positioned at the retracted position.
  • the plating solution L1 placed on the substrate W is heated.
  • the substrate W is covered with the lid 6 (step S205).
  • the swivel motor 72 of the lid moving mechanism 7 is driven, and the lid 6 swivels in the horizontal direction and is positioned at an upper position (the position indicated by the alternate long and short dash line in FIG. 3).
  • the cylinder 73 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position is lowered to be positioned at the first interval position.
  • the distance between the substrate W and the first ceiling plate 611 of the lid 6 becomes the first interval, and the side wall portion 62 of the lid 6 is arranged on the outer peripheral side of the substrate W.
  • the lower end 621 of the side wall portion 62 of the lid 6 is positioned at a position lower than the lower surface of the substrate W. In this way, the substrate W is covered with the lid 6, and the space around the substrate W is closed.
  • the gas nozzle 661 provided on the ceiling 61 of the lid 6 discharges the inert gas inside the lid 6 (step S206).
  • the inside of the lid 6 is replaced with an inert gas, and the periphery of the substrate W becomes a hypoxic atmosphere.
  • the inert gas is discharged for a predetermined time, and then the discharge of the inert gas is stopped.
  • the plating solution L1 placed on the substrate W is heated by the heater 63 (step S207).
  • the temperature of the plating solution L1 rises to the temperature at which the components are precipitated, the components of the plating solution L1 are precipitated on the surface of the seed layer 503, and the plating film 506 is formed (see FIG. 11).
  • the lid body moving mechanism 7 is driven, and the lid body 6 is positioned at the retracted position (step S208).
  • the cylinder 73 of the lid moving mechanism 7 is driven to raise the lid 6 and position it in the upper position.
  • the swivel motor 72 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position swivels in the horizontal direction and is positioned at the retracted position.
  • the substrate W is rinsed (step S209).
  • the rotation speed of the substrate W is increased more than the rotation speed during the plating process.
  • the substrate W is rotated at the same rotation speed as the rinsing process (step S203) before the plating process.
  • the rinse liquid nozzle 551 which has been positioned at the retracted position, moves to the discharge position.
  • the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W to clean the surface of the substrate W. As a result, the plating solution L1 remaining on the substrate W is washed away.
  • the rinsed substrate W is dried (step S210).
  • the rotation speed of the substrate W is increased to be higher than the rotation speed of the rinsing process (step S209) to rotate the substrate W at a high speed.
  • the rinse liquid L3 remaining on the substrate W is shaken off and the substrate W dries.
  • the substrate W is taken out from the plating processing section 5 by the substrate transport device 17 and transported to the delivery section 14. Further, the substrate W conveyed to the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 13 and accommodated in the carrier C.
  • the metal is embedded in the recess 501 by the electroless plating method.
  • the seed layer 503 formed on the opening edge of the recess 501 is also removed.
  • so-called pinch-off in which the opening of the recess 501 is closed by the plating film before the entire inside of the recess 501 is filled with the plating film is less likely to occur, so that defects such as voids and seams are formed in the recess 501. Can be suppressed.
  • the seed layer 503 formed on the surface of the substrate W is removed, the seed layer 503 formed on the inner surface of the recess 501 is protected by a resin material, so that the seed formed on the inner surface of the recess 501 is formed. It is possible to prevent the layer 503 from being removed.
  • the film thickness of the seed layer 503 becomes thinner, it becomes difficult to remove only the seed layer 503 formed on the surface of the substrate W while leaving the seed layer 503 formed on the inner surface of the recess 501.
  • by protecting the seed layer 503 formed on the inner surface of the recess 501 with a resin material only the seed layer 503 formed on the surface of the substrate W can be appropriately removed.
  • the barrier layer 502 formed on the surface of the substrate W is exposed from the seed layer 503 by performing the surface seed layer removing treatment.
  • the barrier layer 502 exposed from the seed layer 503 is oxidized to generate electrons.
  • the generated electrons are transmitted to the seed layer 503 formed on the inner surface of the recess 501 and concentrated in the lower part of the recess 501.
  • ⁇ Modification example> an example in which the surface seed layer exposure treatment (step S102 in FIG. 4) and the protective film removal treatment (step S104 in FIG. 4) are performed by a wet treatment using a treatment liquid has been described. Not limited to this, the surface seed layer exposure treatment and the protective film removal treatment may be performed by ashing (ashing).
  • FIG. 12 is a diagram showing a configuration of a substrate processing apparatus according to a modified example.
  • FIG. 13 is a diagram showing a configuration of a second pretreatment unit according to a modified example.
  • the substrate processing device 1A includes a first device 1A1 and a second device 1A2.
  • the first apparatus 1A1 includes a first pretreatment unit 4A1 and a plating processing unit 5 described above.
  • the first pretreatment unit 4A1 has, for example, a configuration in which the second nozzle 132, the second valve 137b, and the first removal liquid supply source 138b are omitted from the pretreatment unit 4 described above.
  • a protective film forming treatment step S101 in FIG. 4
  • a surface seed layer removing treatment step S103 in FIG. 4
  • the first device 1A1 includes a carrier mounting table, a substrate transfer device, and the like, in addition to the first pretreatment section 4A1 and the plating treatment section 5.
  • the second device 1A2 includes a second pretreatment unit 4A2.
  • the second pretreatment unit 4A2 is a plasma processing apparatus.
  • the second pretreatment unit 4A2 includes a container 401 and an exhaust pipe 402.
  • Ar gas or oxygen (O2) gas is supplied into the container 401 via the supply pipe 403.
  • the gas in the container 401 is exhausted from the exhaust pipe 402.
  • the inside of the container 401 has a normal pressure atmosphere, but the inside of the container 401 may have a vacuum atmosphere.
  • a lower electrode 404 is provided in the container 401, and the substrate W is placed on the lower electrode 404.
  • a housing 405 is provided at a position facing the surface of the lower electrode 404 on which the substrate W is placed.
  • An upper electrode 406 is arranged in the housing 405.
  • a high frequency power supply 407 is connected to the upper electrode 406.
  • the substrate W is placed on the lower electrode 404, Ar gas is supplied into the container 401. Then, the high-frequency power of a predetermined frequency is applied from the high-frequency power source 407 to the upper electrode 406 to excite the Ar gas plasma in the container 401. After the plasma of Ar gas is excited, the protective film 504 is ashed (under ashed) and removed from the substrate W by further supplying O2 gas into the container 401.
  • the second pretreatment unit 4A2 performs the surface seed layer exposure treatment (step S102 in FIG. 4) and the protective film removal treatment by an ashing treatment.
  • the substrate processing apparatus 1A After the protective film forming treatment (step S101 in FIG. 4) is performed in the first pretreatment unit 4A1 of the first apparatus 1A1, the substrate W after the protective film forming treatment is seconded. It is conveyed to the second pretreatment unit 4A2 of the apparatus 1A2. Subsequently, after the surface seed layer exposure treatment (step S102 in FIG. 4) is performed in the second pretreatment section 4A2, the substrate W after the surface seed layer exposure treatment is conveyed to the first pretreatment section 4A1.
  • the surface seed layer removal treatment (step S103 in FIG. 4), the rinsing treatment (step S105 in FIG. 4), and the drying treatment (step S106 in FIG. 4) are performed in the first pretreatment unit 4A1, and then the surface seed is performed.
  • the substrate W after the layer removal treatment is conveyed to the second pretreatment unit 4A2.
  • the protective film removing treatment (step S104 in FIG. 4) is performed in the second pretreatment unit 4A2, the substrate W after the protective film removal treatment is conveyed to the plating processing unit 5.
  • the surface seed layer exposure treatment and the protective film removal treatment are performed by the ashing treatment, but the substrate processing apparatus 1A performs, for example, the surface seed layer exposure treatment by the wet treatment and the protective film removal treatment by the ashing treatment. You may go.
  • the surface seed layer removal treatment does not necessarily have to be performed by a wet treatment.
  • the surface seed layer removal treatment may be performed by a plasma treatment, a reverse sputtering treatment, or the like.
  • the surface seed layer removal treatment may be performed using the second pretreatment unit 4A2.
  • the protective film forming treatment, the surface seed layer exposure treatment, the surface seed layer removing treatment and the protective film removing treatment are performed by a wet treatment
  • these treatments are performed by using a single pretreatment unit 4.
  • the protective film forming treatment, the surface seed layer exposure treatment, the surface seed layer removing treatment and the protective film removing treatment may be performed using a plurality of pretreatment sections.
  • a protective film forming treatment for coating and removing a resin material, a surface seed layer exposure treatment and a protective film removing treatment, and a surface seed layer removing treatment for removing the seed layer 503 are performed using two different pretreatment devices. May be good.
  • the plating processing unit 5 may further include a liquid supply unit 130, a heating unit 140, and the like in addition to the configuration shown in FIG.
  • the substrate treatment method includes a preparation step, an embedding step (for example, a protective film forming treatment), a surface seed layer removing step (for example, a surface seed layer removing treatment), and the like. It includes a resin material removing step (as an example, a protective film removing treatment) and a plating step (as an example, an electroless plating treatment).
  • a substrate as an example, substrate W
  • a seed layer as an example, seed layer 503 formed on the surface and the inner surface of the recess is prepared. To do.
  • a resin material is embedded in the recess.
  • the surface seed layer removing step removes the seed layer formed on the surface of the substrate while protecting the seed layer formed on the inner surface of the recess with a resin material (for example, a protective film 504).
  • a resin material for example, a protective film 504
  • the resin material embedded in the recess is removed after the surface seed layer removing step.
  • a plating film for example, plating film 506 by an electroless plating method is formed in the recesses, and the recesses are filled with the plating film.
  • the seed layer formed on the opening edge of the recess is also removed.
  • so-called pinch-off in which the opening of the recess is closed by the plating film before the entire recess is filled with the plating film, is less likely to occur, so that defects such as voids and seams are suppressed from being formed in the recess. can do.
  • the embedding process is a process of applying a resin material to the surface of the substrate.
  • the substrate processing method according to the embodiment may further include a surface seed layer exposure step (for example, a surface seed layer exposure step).
  • a surface seed layer exposure step the seed layer formed on the surface of the substrate is exposed from the resin material by removing the resin material applied to the surface of the substrate after the embedding step and before the surface seed layer removal step. ..
  • the seed layer formed on the surface of the substrate can be exposed.
  • the embedding step, the surface seed layer exposing step, the surface seed layer removing step, and the resin material removing step may be performed by a wet treatment using a liquid. This makes it easy to realize the substrate processing method according to the embodiment with a single device.
  • the surface seed layer exposure step and the resin material removal step may be performed by an ashing process.
  • the resin material can also be removed by ashing.
  • the substrate processing apparatus (as an example, the substrate processing apparatus 1, 1A) according to the embodiment includes an embedding processing unit (as an example, a pretreatment unit 4, a first pretreatment unit 4A1) and a surface seed layer removing unit (as an example).
  • a pretreatment section 4 a first pretreatment section 4A1, a second pretreatment section 4A2
  • a resin material removing section as an example, a pretreatment section 4, a first pretreatment section 4A1, a second pretreatment section 4A2.
  • a plating processing unit (as an example, a plating processing unit 5).
  • the resin material is embedded in the recesses of the substrate having recesses (as an example, recess 501) formed on the surface and seed layers (seed layer 503 as an example) formed on the surface and the inner surface of the recesses. ..
  • the surface seed layer removing portion removes the seed layer formed on the surface of the substrate while protecting the seed layer formed on the inner surface of the recess with the resin material.
  • the resin material removing portion removes the resin material embedded in the recess.
  • a plating film for example, plating film 506) by an electroless plating method is formed in the recesses, and the recesses are filled with the plating film. As a result, the metal can be embedded in the recess without causing defects such as voids and seams.

Abstract

A substrate processing method according to the present disclosure comprises a preparation step, an embedding step, a surface seed layer removal step, a resin material removal step and a plating step. In the preparation step, a substrate (W) is prepared, said substrate (W) being provided with a recess (501) in the surface, while being provided with a seed layer (503) on the surface and on the inner surface of the recess. In the embedding step, the recess is filled with a resin material. In the surface seed layer removal step, the seed layer formed on the surface of the substrate is removed, while protecting the seed layer formed on the inner surface of the recess by means of the resin material. In the resin material removal step, the resin material filled in the recess is removed after the surface seed layer removal step. In the plating step, the recess is filled with a plating film (506) by forming the plating film in the recess by an electroless plating method after the resin material removal step.

Description

基板処理方法および基板処理装置Substrate processing method and substrate processing equipment
　本開示は、基板処理方法および基板処理装置に関する。 The present disclosure relates to a substrate processing method and a substrate processing apparatus.
　従来、半導体の製造工程において、トレンチやビアといった凹部に銅などの金属を埋め込む手法としてめっき処理が用いられる。 Conventionally, in the semiconductor manufacturing process, plating is used as a method of embedding a metal such as copper in a recess such as a trench or a via.
　めっき処理においては、凹部内全体がめっき膜で埋まる前に凹部の開口部がめっき膜によって閉ざされてしまうことにより、ボイドやシーム等の欠陥が凹部内に形成されるおそれがある。このような欠陥を抑制するために、凹部上部における金属の析出速度を抑える抑制剤や凹部底部における金属の析出速度を促進させる促進剤をめっき液に添加する技術が提案されている。 In the plating process, defects such as voids and seams may be formed in the recess because the opening of the recess is closed by the plating film before the entire recess is filled with the plating film. In order to suppress such defects, a technique has been proposed in which an inhibitor for suppressing the metal deposition rate at the upper portion of the recess and an accelerator for promoting the metal deposition rate at the bottom of the recess are added to the plating solution.
特開２００３－３２８１８０号公報Japanese Unexamined Patent Publication No. 2003-328180
　本開示は、凹部への金属の埋め込みをボイドやシーム等の欠陥を生じさせることなく行うことができる技術を提供する。 The present disclosure provides a technique capable of embedding metal in a recess without causing defects such as voids and seams.
　本開示の一態様による基板処理方法は、準備工程と、埋込工程と、表面シード層除去工程と、樹脂材料除去工程と、めっき工程とを含む。準備工程は、表面に凹部が形成され、且つ、表面および凹部の内面にシード層が形成された基板を準備する。埋込工程は、凹部に樹脂材料を埋め込む。表面シード層除去工程は、凹部の内面に形成されたシード層を樹脂材料で保護しつつ、基板の表面に形成されたシード層を除去する。樹脂材料除去工程は、表面シード層除去工程後、凹部に埋め込まれた樹脂材料を除去する。めっき工程は、樹脂材料除去工程後、凹部に無電解めっき法によるめっき膜を形成して凹部をめっき膜で埋める。 The substrate processing method according to one aspect of the present disclosure includes a preparation step, an embedding step, a surface seed layer removing step, a resin material removing step, and a plating step. In the preparatory step, a substrate having recesses formed on the surface and a seed layer formed on the surface and the inner surface of the recesses is prepared. In the embedding step, a resin material is embedded in the recess. The surface seed layer removing step removes the seed layer formed on the surface of the substrate while protecting the seed layer formed on the inner surface of the recess with a resin material. In the resin material removing step, the resin material embedded in the recess is removed after the surface seed layer removing step. In the plating step, after the resin material removing step, a plating film is formed in the recesses by an electroless plating method, and the recesses are filled with the plating film.
　本開示によれば、凹部への金属の埋め込みをボイドやシーム等の欠陥を生じさせることなく行うことができる。 According to the present disclosure, metal can be embedded in the recess without causing defects such as voids and seams.
図１は、実施形態に係る基板処理装置の構成を示す図である。FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment. 図２は、実施形態に係る前処理部の構成を示す図である。FIG. 2 is a diagram showing a configuration of a pretreatment unit according to an embodiment. 図３は、実施形態に係るめっき処理部の構成を示す図である。FIG. 3 is a diagram showing a configuration of a plating processing unit according to an embodiment. 図４は、実施形態に係る基板処理装置が実行する処理の手順を示すフローチャートである。FIG. 4 is a flowchart showing a processing procedure executed by the substrate processing apparatus according to the embodiment. 図５は、実施形態に係る無電解めっき処理の手順を示すフローチャートである。FIG. 5 is a flowchart showing the procedure of the electroless plating process according to the embodiment. 図６は、基板処理装置による処理前の基板の一例を示す図である。FIG. 6 is a diagram showing an example of a substrate before processing by the substrate processing apparatus. 図７は、保護膜形成処理後の基板の一例を示す図である。FIG. 7 is a diagram showing an example of the substrate after the protective film forming treatment. 図８は、表面シード層露出処理後の基板の一例を示す図である。FIG. 8 is a diagram showing an example of the substrate after the surface seed layer exposure treatment. 図９は、表面シード層除去処理後の基板の一例を示す図である。FIG. 9 is a diagram showing an example of the substrate after the surface seed layer removal treatment. 図１０は、保護膜除去処理後の基板の一例を示す図である。FIG. 10 is a diagram showing an example of the substrate after the protective film removal treatment. 図１１は、無電解めっき処理後の基板の一例を示す図である。FIG. 11 is a diagram showing an example of the substrate after the electroless plating treatment. 図１２は、変形例に係る基板処理装置の構成を示す図である。FIG. 12 is a diagram showing a configuration of a substrate processing apparatus according to a modified example. 図１３は、変形例に係る第２前処理部の構成を示す図である。FIG. 13 is a diagram showing a configuration of a second pretreatment unit according to a modified example.
　以下に、本開示による基板処理方法および基板処理装置を実施するための形態（以下、「実施形態」と記載する）について図面を参照しつつ詳細に説明する。なお、この実施形態により本開示による基板処理方法および基板処理装置が限定されるものではない。また、各実施形態は、処理内容を矛盾させない範囲で適宜組み合わせることが可能である。また、以下の各実施形態において同一の部位には同一の符号を付し、重複する説明は省略される。 Hereinafter, the substrate processing method according to the present disclosure and the embodiment for implementing the substrate processing apparatus (hereinafter, referred to as “embodiment”) will be described in detail with reference to the drawings. It should be noted that this embodiment does not limit the substrate processing method and the substrate processing apparatus according to the present disclosure. In addition, each embodiment can be appropriately combined as long as the processing contents do not contradict each other. Further, in each of the following embodiments, the same parts are designated by the same reference numerals, and duplicate description is omitted.
　また、以下参照する各図面では、説明を分かりやすくするために、互いに直交するＸ軸方向、Ｙ軸方向およびＺ軸方向を規定し、Ｚ軸正方向を鉛直上向き方向とする直交座標系を示す場合がある。また、鉛直軸を回転中心とする回転方向をθ方向と呼ぶ場合がある。 Further, in each drawing referred to below, in order to make the explanation easy to understand, an orthogonal coordinate system in which the X-axis direction, the Y-axis direction, and the Z-axis direction orthogonal to each other are defined and the Z-axis positive direction is the vertically upward direction is shown. In some cases. Further, the rotation direction centered on the vertical axis may be referred to as the θ direction.
＜基板処理装置の構成＞
　図１は、実施形態に係る基板処理装置の構成を示す図である。図１に示すように、基板処理装置１は、搬入出ステーション２と、処理ステーション３とを備える。搬入出ステーション２と処理ステーション３とは隣接して設けられる。 <Configuration of board processing equipment>
FIG. 1 is a diagram showing a configuration of a substrate processing apparatus according to an embodiment. As shown in FIG. 1, the substrate processing device 1 includes a loading / unloading station 2 and a processing station 3. The loading / unloading station 2 and the processing station 3 are provided adjacent to each other.
　搬入出ステーション２は、キャリア載置台１１と、搬送部１２とを備える。キャリア載置台１１には、複数枚の基板、本実施形態では半導体ウェハ（以下基板Ｗ）を水平状態で収容する複数のキャリアＣが載置される。 The loading / unloading station 2 includes a carrier mounting table 11 and a transport section 12. A plurality of substrates, in the present embodiment, a plurality of carriers C for accommodating a semiconductor wafer (hereinafter, substrate W) in a horizontal state are mounted on the carrier mounting table 11.
　キャリア載置台１１には、複数のロードポートが搬送部１２に隣接するように並べて配置されており、複数のロードポートのそれぞれにキャリアＣが１つずつ載置される。 A plurality of load ports are arranged side by side on the carrier mounting table 11 so as to be adjacent to the transport unit 12, and one carrier C is mounted on each of the plurality of load ports.
　搬送部１２は、キャリア載置台１１に隣接して設けられ、内部に基板搬送装置１３と、受渡部１４とを備える。基板搬送装置１３は、基板Ｗを保持するウェハ保持機構を備える。また、基板搬送装置１３は、水平方向および鉛直方向への移動ならびに鉛直軸を中心とする旋回が可能であり、ウェハ保持機構を用いてキャリアＣと受渡部１４との間で基板Ｗの搬送を行う。 The transport unit 12 is provided adjacent to the carrier mounting table 11, and includes a substrate transport device 13 and a delivery unit 14 inside. The substrate transfer device 13 includes a wafer holding mechanism for holding the substrate W. Further, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and transfers the substrate W between the carrier C and the delivery portion 14 by using the wafer holding mechanism. Do.
　処理ステーション３は、搬送部１２に隣接して設けられる。処理ステーション３は、搬送部１５と、複数の前処理部４と、複数のめっき処理部５とを備える。複数の前処理部４およびめっき処理部５は、搬送部１５の両側に並べて設けられる。たとえば、複数の前処理部４は、搬送部１５のＹ軸正方向側に設けられ、複数のめっき処理部５は、搬送部１５のＹ軸負方向側に設けられる。前処理部４およびめっき処理部５の構成については、後述する。 The processing station 3 is provided adjacent to the transport unit 12. The processing station 3 includes a transport unit 15, a plurality of pretreatment units 4, and a plurality of plating processing units 5. The plurality of pretreatment units 4 and plating processing units 5 are provided side by side on both sides of the transport unit 15. For example, the plurality of pretreatment units 4 are provided on the Y-axis positive direction side of the transport unit 15, and the plurality of plating processing units 5 are provided on the Y-axis negative direction side of the transport unit 15. The configurations of the pretreatment section 4 and the plating treatment section 5 will be described later.
　搬送部１５は、内部に基板搬送装置１７を備える。基板搬送装置１７は、基板Ｗを保持するウェハ保持機構を備える。また、基板搬送装置１７は、水平方向および鉛直方向への移動ならびに鉛直軸を中心とする旋回が可能であり、ウェハ保持機構を用いて受渡部１４、前処理部４およびめっき処理部５間で基板Ｗの搬送を行う。 The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 includes a wafer holding mechanism for holding the substrate W. Further, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and swivel around the vertical axis, and uses a wafer holding mechanism between the delivery unit 14, the pretreatment unit 4, and the plating processing unit 5. The substrate W is transported.
　また、基板処理装置１は、制御装置９を備える。制御装置９は、たとえばコンピュータであり、制御部９１と記憶部９２とを備える。記憶部９２には、基板処理装置１において実行される各種の処理を制御するプログラムが格納される。制御部９１は、記憶部９２に記憶されたプログラムを読み出して実行することによって基板処理装置１の動作を制御する。 Further, the substrate processing device 1 includes a control device 9. The control device 9 is, for example, a computer, and includes a control unit 91 and a storage unit 92. The storage unit 92 stores programs that control various processes executed in the substrate processing device 1. The control unit 91 controls the operation of the substrate processing device 1 by reading and executing the program stored in the storage unit 92.
　なお、かかるプログラムは、コンピュータによって読み取り可能な記憶媒体に記録されていたものであって、その記憶媒体から制御装置９の記憶部９２にインストールされたものであってもよい。コンピュータによって読み取り可能な記憶媒体としては、たとえばハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルディスク（ＭＯ）、メモリカードなどがある。 Note that such a program may be recorded on a storage medium readable by a computer, and may be installed from the storage medium in the storage unit 92 of the control device 9. Examples of storage media that can be read by a computer include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
　上記のように構成された基板処理装置１では、まず、搬入出ステーション２の基板搬送装置１３が、キャリア載置台１１に載置されたキャリアＣから基板Ｗを取り出し、取り出した基板Ｗを受渡部１４に載置する。受渡部１４に載置された基板Ｗは、処理ステーション３の基板搬送装置１７によって受渡部１４から取り出されて、前処理部４へ搬入される。 In the board processing device 1 configured as described above, first, the board transfer device 13 of the loading / unloading station 2 takes out the board W from the carrier C mounted on the carrier mounting table 11, and delivers the taken out board W to the delivery unit. Place on 14. The substrate W placed on the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 17 of the processing station 3 and carried into the preprocessing unit 4.
　前処理部４へ搬入された基板Ｗは、前処理部４によって処理される。詳細については後述するが、前処理部４では、めっき処理部５による処理に先立ち、基板Ｗに対して所定の液処理を行う。 The substrate W carried into the pretreatment unit 4 is processed by the pretreatment unit 4. Although the details will be described later, the pretreatment unit 4 performs a predetermined liquid treatment on the substrate W prior to the treatment by the plating processing unit 5.
　前処理部４によって処理された基板Ｗは、基板搬送装置１７によって前処理部４からめっき処理部５へ搬送され、めっき処理部５によって処理される。具体的には、基板Ｗの表面には、トレンチやビア等の凹部が形成されており、めっき処理部５は、かかる凹部に対して無電解めっき法による金属の埋め込みを行う。 The substrate W processed by the pretreatment unit 4 is conveyed from the pretreatment unit 4 to the plating processing unit 5 by the substrate transfer device 17, and is processed by the plating processing unit 5. Specifically, recesses such as trenches and vias are formed on the surface of the substrate W, and the plating processing unit 5 embeds metal in the recesses by an electroless plating method.
　めっき処理部５によって処理された基板Ｗは、基板搬送装置１７によってめっき処理部５から搬出されて、受渡部１４に載置される。そして、受渡部１４に載置された処理済の基板Ｗは、基板搬送装置１３によってキャリア載置台１１のキャリアＣへ戻される。 The substrate W processed by the plating processing unit 5 is carried out from the plating processing unit 5 by the substrate transfer device 17 and placed on the delivery unit 14. Then, the processed substrate W mounted on the delivery unit 14 is returned to the carrier C of the carrier mounting table 11 by the substrate transport device 13.
＜前処理部の構成＞
　次に、前処理部４について図２を参照し説明する。図２は、実施形態に係る前処理部４の構成を示す図である。 <Structure of pre-processing unit>
Next, the preprocessing unit 4 will be described with reference to FIG. FIG. 2 is a diagram showing the configuration of the pretreatment unit 4 according to the embodiment.
　図２に示すように、前処理部４は、チャンバ１１０と、基板保持機構１２０と、液供給部１３０と、加熱部１４０と、カップ１５０とを備える。 As shown in FIG. 2, the pretreatment unit 4 includes a chamber 110, a substrate holding mechanism 120, a liquid supply unit 130, a heating unit 140, and a cup 150.
　チャンバ１１０は、基板保持機構１２０、液供給部１３０、加熱部１４０およびカップ１５０を収容する。チャンバ１１０の天井部には、ＦＦＵ（Fan　Filter　Unit）１１１が設けられる。ＦＦＵ１１１は、チャンバ１１０内にダウンフローを形成する。 The chamber 110 houses the substrate holding mechanism 120, the liquid supply unit 130, the heating unit 140, and the cup 150. An FFU (Fan Filter Unit) 111 is provided on the ceiling of the chamber 110. The FFU 111 forms a downflow in the chamber 110.
　基板保持機構１２０は、保持部１２１と、支柱部１２２と、駆動部１２３とを備える。保持部１２１は、基板Ｗを水平に保持する。具体的には、保持部１２１は、複数の把持部１２１ａを備えており、複数の把持部１２１ａを用いて基板Ｗの周縁部を把持する。支柱部１２２は、鉛直方向に延在し、基端部が駆動部１２３によって回転可能に支持され、先端部において保持部１２１を水平に支持する。駆動部１２３は、支柱部１２２を鉛直軸まわりに回転させる。かかる基板保持機構１２０は、駆動部１２３を用いて支柱部１２２を回転させることによって支柱部１２２に支持された保持部１２１を回転させ、これにより、保持部１２１に保持された基板Ｗを回転させる。 The board holding mechanism 120 includes a holding portion 121, a strut portion 122, and a driving portion 123. The holding portion 121 holds the substrate W horizontally. Specifically, the holding portion 121 includes a plurality of grip portions 121a, and grips the peripheral edge portion of the substrate W using the plurality of grip portions 121a. The strut portion 122 extends in the vertical direction, the base end portion is rotatably supported by the drive portion 123, and the holding portion 121 is horizontally supported at the tip end portion. The drive unit 123 rotates the support unit 122 around the vertical axis. The substrate holding mechanism 120 rotates the holding portion 121 supported by the supporting portion 122 by rotating the supporting portion 122 by using the driving unit 123, thereby rotating the substrate W held by the holding portion 121. ..
　なお、保持部１２１は、たとえばバキュームチャックや静電チャックのように基板Ｗを吸着保持するタイプの保持部であってもよい。 The holding unit 121 may be a type of holding unit that attracts and holds the substrate W, such as a vacuum chuck or an electrostatic chuck.
　液供給部１３０は、基板保持機構１２０に保持された基板Ｗに対して各種の処理液を供給する。液供給部１３０は、第１ノズル１３１と、第２ノズル１３２と、第３ノズル１３３と、第４ノズル１３４とを備える。また、液供給部１３０は、第１～第４ノズル１３１～１３４を支持するアーム１３５と、アーム１３５を移動させる移動機構１３６とを備える。 The liquid supply unit 130 supplies various processing liquids to the substrate W held by the substrate holding mechanism 120. The liquid supply unit 130 includes a first nozzle 131, a second nozzle 132, a third nozzle 133, and a fourth nozzle 134. Further, the liquid supply unit 130 includes an arm 135 that supports the first to fourth nozzles 131 to 134, and a moving mechanism 136 that moves the arm 135.
　第１ノズル１３１は、第１バルブ１３７ａを介して樹脂材料供給源１３８ａに接続され、樹脂材料供給源１３８ａから供給される樹脂材料を吐出する。樹脂材料としては、たとえば、トップコート膜形成用のトップコート液、ポリイミド膜形成用のポリイミド液、レジスト膜形成用のレジスト液などが用いられる。 The first nozzle 131 is connected to the resin material supply source 138a via the first valve 137a, and discharges the resin material supplied from the resin material supply source 138a. As the resin material, for example, a top coat liquid for forming a top coat film, a polyimide liquid for forming a polyimide film, a resist liquid for forming a resist film, and the like are used.
　第２ノズル１３２は、第２バルブ１３７ｂを介して第１除去液供給源１３８ｂに接続され、第１除去液供給源１３８ｂから供給される第１除去液を吐出する。第１除去液は、たとえば、ＰＧＭＥＡ（プロピレングリコールモノメチルエーテルアセテート）、ＮＭＰ（Ｎ－メチルピロリドン）等の有機溶剤であり、基板Ｗに形成された保護膜の除去に用いられる。 The second nozzle 132 is connected to the first removal liquid supply source 138b via the second valve 137b, and discharges the first removal liquid supplied from the first removal liquid supply source 138b. The first removing liquid is, for example, an organic solvent such as PGMEA (propylene glycol monomethyl ether acetate) and NMP (N-methylpyrrolidone), and is used for removing the protective film formed on the substrate W.
　第３ノズル１３３は、第３バルブ１３７ｃを介して第２除去液供給源１３８ｃに接続され、第２除去液供給源１３８ｃから供給される第２除去液を吐出する。第２除去液は、たとえば、ＳＰＭ（硫酸過酸化水素水水溶液）やＦＰＭ（フッ酸過酸化水素水水溶液）であり、基板Ｗに形成されたシード層の除去に用いられる。なお、ＳＰＭやＦＰＭは希釈されてもよい。 The third nozzle 133 is connected to the second removal liquid supply source 138c via the third valve 137c, and discharges the second removal liquid supplied from the second removal liquid supply source 138c. The second removing liquid is, for example, SPM (hydrogen peroxide solution aqueous solution) or FPM (hydrogen peroxide solution aqueous solution), and is used for removing the seed layer formed on the substrate W. In addition, SPM and FPM may be diluted.
　第４ノズル１３４は、第４バルブ１３７ｄを介してリンス液供給源１３８ｄに接続され、リンス液供給源１３８ｄから供給されるリンス液を吐出する。リンス液は、たとえば、ＤＩＷ（脱イオン水）である。 The fourth nozzle 134 is connected to the rinse liquid supply source 138d via the fourth valve 137d, and discharges the rinse liquid supplied from the rinse liquid supply source 138d. The rinse solution is, for example, DIW (deionized water).
　加熱部１４０は、たとえば保持部１２１に内蔵され、保持部１２１によって保持された基板Ｗを加熱する。加熱部１４０は、基板Ｗ上に供給された樹脂材料を加熱するベイク処理に用いられる。 The heating unit 140 is built in, for example, the holding unit 121, and heats the substrate W held by the holding unit 121. The heating unit 140 is used for a baking process for heating the resin material supplied on the substrate W.
　なお、加熱部１４０は、必ずしも保持部１２１に設けられることを要しない。たとえば、加熱部１４０は、保持部１２１に保持された基板Ｗの上方に配置されるトッププレートに設けられてもよい。また、加熱部１４０は、必ずしも前処理部４の内部に設けられることを要しない。すなわち、加熱部１４０は、前処理部４とは別に設けられてもよい。 The heating unit 140 does not necessarily have to be provided in the holding unit 121. For example, the heating unit 140 may be provided on a top plate arranged above the substrate W held by the holding unit 121. Further, the heating unit 140 does not necessarily have to be provided inside the pretreatment unit 4. That is, the heating unit 140 may be provided separately from the pretreatment unit 4.
　カップ１５０は、保持部１２１を取り囲むように配置され、保持部１２１の回転によって基板Ｗから飛散する処理液を捕集する。カップ１５０の底部には、排液口１５１が形成されており、カップ１５０によって捕集された処理液は、かかる排液口１５１から前処理部４の外部へ排出される。また、カップ１５０の底部には、ＦＦＵ１１１から供給される気体を前処理部４の外部へ排出する排気口１５２が形成される。 The cup 150 is arranged so as to surround the holding portion 121, and collects the processing liquid scattered from the substrate W by the rotation of the holding portion 121. A drainage port 151 is formed at the bottom of the cup 150, and the treatment liquid collected by the cup 150 is discharged from the drainage port 151 to the outside of the pretreatment section 4. Further, at the bottom of the cup 150, an exhaust port 152 for discharging the gas supplied from the FFU 111 to the outside of the pretreatment unit 4 is formed.
＜めっき処理部の構成＞
　次に、図３を参照して、めっき処理部５の構成を説明する。図３は、実施形態に係るめっき処理部５の構成を示す図である。 <Structure of plating processing part>
Next, the configuration of the plating processing unit 5 will be described with reference to FIG. FIG. 3 is a diagram showing the configuration of the plating processing unit 5 according to the embodiment.
　めっき処理部５は、無電解めっき処理を含む液処理を行うように構成されている。このめっき処理部５は、チャンバ５１と、チャンバ５１内に配置され、基板Ｗを水平に保持する基板保持部５２と、基板保持部５２に保持された基板Ｗの表面（上面）にめっき液Ｌ１（処理液）を供給するめっき液供給部５３（処理液供給部）と、を備えている。 The plating processing unit 5 is configured to perform a liquid treatment including an electroless plating treatment. The plating processing unit 5 is arranged on the chamber 51, the substrate holding portion 52 which is arranged in the chamber 51 and holds the substrate W horizontally, and the plating solution L1 on the surface (upper surface) of the substrate W held by the substrate holding portion 52. It includes a plating solution supply unit 53 (treatment liquid supply unit) for supplying (treatment liquid).
　本実施形態において、基板保持部５２は、基板Ｗの下面（裏面）を真空吸着するチャック部材５２１を有している。このチャック部材５２１は、いわゆるバキュームチャックタイプとなっている。 In the present embodiment, the substrate holding portion 52 has a chuck member 521 that vacuum-adsorbs the lower surface (back surface) of the substrate W. The chuck member 521 is a so-called vacuum chuck type.
　基板保持部５２には、回転シャフト５２２を介して回転モータ５２３（回転駆動部）が連結されている。この回転モータ５２３が駆動されると、基板保持部５２は、基板Ｗとともに回転する。回転モータ５２３は、チャンバ５１に固定されたベース５２４に支持されている。なお、基板保持部５２の内部にはヒータなどの加熱源は設けられていない。 A rotary motor 523 (rotary drive unit) is connected to the substrate holding unit 52 via a rotary shaft 522. When the rotary motor 523 is driven, the substrate holding portion 52 rotates together with the substrate W. The rotary motor 523 is supported by a base 524 fixed to the chamber 51. A heating source such as a heater is not provided inside the substrate holding portion 52.
　めっき液供給部５３は、基板保持部５２に保持された基板Ｗにめっき液Ｌ１を吐出（供給）するめっき液ノズル５３１（処理液ノズル）と、めっき液ノズル５３１にめっき液Ｌ１を供給するめっき液供給源５３２と、を有している。このうちめっき液供給源５３２は、所定の温度に加熱ないし温調されためっき液Ｌ１を、めっき液配管５３３を介してめっき液ノズル５３１に供給するように構成されている。めっき液ノズル５３１からのめっき液Ｌ１の吐出時の温度は、たとえば５５℃以上７５℃以下であり、より好ましくは６０℃以上７０℃以下である。めっき液ノズル５３１は、ノズルアーム５６に保持されて、移動可能に構成されている。 The plating solution supply unit 53 includes a plating solution nozzle 531 (treatment solution nozzle) that discharges (supplies) the plating solution L1 to the substrate W held by the substrate holding unit 52, and plating that supplies the plating solution L1 to the plating solution nozzle 531. It has a liquid supply source 532 and. Of these, the plating solution supply source 532 is configured to supply the plating solution L1 heated or temperature-controlled to a predetermined temperature to the plating solution nozzle 531 via the plating solution pipe 533. The temperature at the time of discharging the plating solution L1 from the plating solution nozzle 531 is, for example, 55 ° C. or higher and 75 ° C. or lower, and more preferably 60 ° C. or higher and 70 ° C. or lower. The plating solution nozzle 531 is held by the nozzle arm 56 and is configured to be movable.
　めっき液Ｌ１は、自己触媒型（還元型）無電解めっき用のめっき液である。めっき液Ｌ１は、たとえば、金属イオンと、還元剤とを含有する。めっき液Ｌ１に含まれる金属イオンは、たとえば、コバルト（Ｃｏ）イオン、ニッケル（Ｎｉ）イオン、タングステン（Ｗ）イオン、銅（Ｃｕ）イオン、パラジウム（Ｐｄ）イオン、金（Ａｕ）イオン、ルテニウム（Ｒｕ）イオン等である。また、めっき液Ｌ１に含まれる還元剤は、次亜リン酸、ジメチルアミンボラン、グリオキシル酸等である。めっき液Ｌ１を使用しためっき処理により形成されるめっき膜としては、たとえば、ＣｏＷＢ、ＣｏＢ、ＣｏＷＰ、ＣｏＷＢＰ、ＮｉＷＢ、ＮｉＢ、ＮｉＷＰ、ＮｉＷＢＰ、Ｃｕ、Ｐｄ、Ｒｕ等が挙げられる。なお、めっき膜は単層から形成されていてもよく、２層以上にわたって形成されてもよい。めっき膜が２層構造からなる場合、下地金属層（シード層）側から順に、たとえばＣｏＷＢ／ＣｏＢ、Ｐｄ／ＣｏＢ等の層構成を有していてもよい。 The plating solution L1 is a plating solution for autocatalytic (reduction type) electroless plating. The plating solution L1 contains, for example, a metal ion and a reducing agent. The metal ions contained in the plating solution L1 include, for example, cobalt (Co) ion, nickel (Ni) ion, tungsten (W) ion, copper (Cu) ion, palladium (Pd) ion, gold (Au) ion, and ruthenium ( Ru) Ions and the like. The reducing agent contained in the plating solution L1 is hypophosphorous acid, dimethylamine borane, glyoxylic acid and the like. Examples of the plating film formed by the plating treatment using the plating solution L1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP, Cu, Pd, Ru and the like. The plating film may be formed from a single layer or may be formed over two or more layers. When the plating film has a two-layer structure, it may have a layer structure such as CoWB / CoB and Pd / CoB in order from the base metal layer (seed layer) side.
　めっき処理部５は、基板保持部５２に保持された基板Ｗの表面に洗浄液Ｌ２を供給する洗浄液供給部５４と、当該基板Ｗの表面にリンス液Ｌ３を供給するリンス液供給部５５と、を更に備えている。 The plating processing unit 5 includes a cleaning liquid supply unit 54 that supplies the cleaning liquid L2 to the surface of the substrate W held by the substrate holding unit 52, and a rinse liquid supply unit 55 that supplies the rinse liquid L3 to the surface of the substrate W. Further prepared.
　洗浄液供給部５４は、基板保持部５２に保持されて回転する基板Ｗに対して洗浄液Ｌ２を供給し、基板Ｗに形成されたシード層を前洗浄処理するものである。この洗浄液供給部５４は、基板保持部５２に保持された基板Ｗに対して洗浄液Ｌ２を吐出する洗浄液ノズル５４１と、洗浄液ノズル５４１に洗浄液Ｌ２を供給する洗浄液供給源５４２と、を有している。このうち洗浄液供給源５４２は、後述するように所定の温度に加熱ないし温調された洗浄液Ｌ２を、洗浄液配管５４３を介して洗浄液ノズル５４１に供給するように構成されている。洗浄液ノズル５４１は、ノズルアーム５６に保持されて、めっき液ノズル５３１とともに移動可能になっている。 The cleaning liquid supply unit 54 supplies the cleaning liquid L2 to the rotating substrate W held by the substrate holding unit 52, and precleans the seed layer formed on the substrate W. The cleaning liquid supply unit 54 has a cleaning liquid nozzle 541 that discharges the cleaning liquid L2 to the substrate W held by the substrate holding unit 52, and a cleaning liquid supply source 542 that supplies the cleaning liquid L2 to the cleaning liquid nozzle 541. .. Of these, the cleaning liquid supply source 542 is configured to supply the cleaning liquid L2 heated or temperature-controlled to a predetermined temperature to the cleaning liquid nozzle 541 via the cleaning liquid pipe 543 as described later. The cleaning liquid nozzle 541 is held by the nozzle arm 56 and can move together with the plating liquid nozzle 531.
　洗浄液Ｌ２としては、ジカルボン酸又はトリカルボン酸が用いられる。このうちジカルボン酸としては、たとえばリンゴ酸、コハク酸、マロン酸、シュウ酸、グルタル酸、アジピン酸、酒石酸等の有機酸を用いることができる。また、トリカルボン酸としては、たとえばクエン酸等の有機酸を用いることができる。 Dicarboxylic acid or tricarboxylic acid is used as the cleaning liquid L2. Of these, as the dicarboxylic acid, for example, organic acids such as malic acid, succinic acid, malonic acid, oxalic acid, glutaric acid, adipic acid, and tartaric acid can be used. Further, as the tricarboxylic acid, an organic acid such as citric acid can be used.
　リンス液供給部５５は、基板保持部５２に保持された基板Ｗにリンス液Ｌ３を吐出するリンス液ノズル５５１と、リンス液ノズル５５１にリンス液Ｌ３を供給するリンス液供給源５５２と、を有している。このうちリンス液ノズル５５１は、ノズルアーム５６に保持されて、めっき液ノズル５３１および洗浄液ノズル５４１とともに移動可能になっている。また、リンス液供給源５５２は、リンス液Ｌ３を、リンス液配管５５３を介してリンス液ノズル５５１に供給するように構成されている。リンス液Ｌ３としては、たとえば、ＤＩＷなどを使用することができる。 The rinse liquid supply unit 55 includes a rinse liquid nozzle 551 that discharges the rinse liquid L3 to the substrate W held by the substrate holding unit 52, and a rinse liquid supply source 552 that supplies the rinse liquid L3 to the rinse liquid nozzle 551. doing. Of these, the rinse liquid nozzle 551 is held by the nozzle arm 56 and can move together with the plating liquid nozzle 531 and the cleaning liquid nozzle 541. Further, the rinse liquid supply source 552 is configured to supply the rinse liquid L3 to the rinse liquid nozzle 551 via the rinse liquid pipe 553. As the rinse liquid L3, for example, DIW or the like can be used.
　上述しためっき液ノズル５３１、洗浄液ノズル５４１およびリンス液ノズル５５１を保持するノズルアーム５６には、図示しないノズル移動機構が連結されている。このノズル移動機構は、ノズルアーム５６を水平方向および上下方向に移動させる。より具体的には、ノズル移動機構によって、ノズルアーム５６は、基板Ｗに処理液（めっき液Ｌ１、洗浄液Ｌ２またはリンス液Ｌ３）を吐出する吐出位置と、吐出位置から退避した退避位置との間で移動可能になっている。このうち吐出位置は、基板Ｗの表面のうちの任意の位置に処理液を供給可能であれば特に限られることはない。たとえば、基板Ｗの中心に処理液を供給可能な位置とすることが好適である。基板Ｗにめっき液Ｌ１を供給する場合、洗浄液Ｌ２を供給する場合、リンス液Ｌ３を供給する場合とで、ノズルアーム５６の吐出位置は異なってもよい。退避位置は、チャンバ５１内のうち、上方から見た場合に基板Ｗに重ならない位置であって、吐出位置から離れた位置である。ノズルアーム５６が退避位置に位置づけられている場合、移動する蓋体６がノズルアーム５６と干渉することが回避される。 A nozzle moving mechanism (not shown) is connected to the nozzle arm 56 that holds the plating liquid nozzle 531, the cleaning liquid nozzle 541, and the rinse liquid nozzle 551 described above. This nozzle moving mechanism moves the nozzle arm 56 in the horizontal direction and the vertical direction. More specifically, the nozzle arm 56 uses the nozzle moving mechanism to move the nozzle arm 56 between a discharge position for discharging the treatment liquid (plating liquid L1, cleaning liquid L2 or rinse liquid L3) to the substrate W and a retracted position retracted from the discharge position. It is possible to move with. Of these, the discharge position is not particularly limited as long as the processing liquid can be supplied to an arbitrary position on the surface of the substrate W. For example, it is preferable to set the center of the substrate W at a position where the processing liquid can be supplied. The ejection position of the nozzle arm 56 may be different depending on whether the plating solution L1 is supplied to the substrate W, the cleaning solution L2 is supplied, or the rinse solution L3 is supplied. The retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above, and is a position away from the discharge position. When the nozzle arm 56 is positioned in the retracted position, it is possible to prevent the moving lid 6 from interfering with the nozzle arm 56.
　基板保持部５２の周囲には、カップ５７１が設けられている。このカップ５７１は、上方から見た場合にリング状に形成されており、基板Ｗの回転時に、基板Ｗから飛散した処理液を受け止めて、ドレンダクト５８１に案内する。カップ５７１の外周側には、雰囲気遮断カバー５７２が設けられており、基板Ｗの周囲の雰囲気がチャンバ５１内に拡散することを抑制している。この雰囲気遮断カバー５７２は、上下方向に延びるように円筒状に形成されており、上端が開口している。雰囲気遮断カバー５７２内に、後述する蓋体６が上方から挿入可能になっている。 A cup 571 is provided around the substrate holding portion 52. The cup 571 is formed in a ring shape when viewed from above, and when the substrate W rotates, it receives the treatment liquid scattered from the substrate W and guides it to the drain duct 581. An atmosphere blocking cover 572 is provided on the outer peripheral side of the cup 571 to prevent the atmosphere around the substrate W from diffusing into the chamber 51. The atmosphere blocking cover 572 is formed in a cylindrical shape so as to extend in the vertical direction, and the upper end is open. A lid 6 to be described later can be inserted into the atmosphere blocking cover 572 from above.
　本実施形態では、基板保持部５２に保持された基板Ｗは、蓋体６によって覆われる。この蓋体６は、天井部６１と、天井部６１から下方に延びる側壁部６２と、を有している。 In the present embodiment, the substrate W held by the substrate holding portion 52 is covered with the lid 6. The lid 6 has a ceiling portion 61 and a side wall portion 62 extending downward from the ceiling portion 61.
　天井部６１は、第１天井板６１１と、第１天井板６１１上に設けられた第２天井板６１２と、を含んでいる。第１天井板６１１と第２天井板６１２との間には、ヒータ６３（加熱部）が介在されている。第１天井板６１１および第２天井板６１２は、ヒータ６３を密封し、ヒータ６３がめっき液Ｌ１などの処理液に触れないように構成されている。より具体的には、ヒータ６３の外周側にはシールリング６１３が設けられており、このシールリング６１３によってヒータ６３が密封されている。第１天井板６１１および第２天井板６１２は、めっき液Ｌ１などの処理液に対する耐腐食性を有していることが好適であり、たとえば、アルミニウム合金によって形成されていてもよい。更に耐腐食性を高めるために、第１天井板６１１、第２天井板６１２および側壁部６２は、テフロン（登録商標）でコーティングされていてもよい。 The ceiling portion 61 includes a first ceiling plate 611 and a second ceiling plate 612 provided on the first ceiling plate 611. A heater 63 (heating unit) is interposed between the first ceiling plate 611 and the second ceiling plate 612. The first ceiling plate 611 and the second ceiling plate 612 are configured to seal the heater 63 so that the heater 63 does not come into contact with a treatment liquid such as the plating liquid L1. More specifically, a seal ring 613 is provided on the outer peripheral side of the heater 63, and the heater 63 is sealed by the seal ring 613. The first ceiling plate 611 and the second ceiling plate 612 preferably have corrosion resistance to a treatment liquid such as the plating liquid L1, and may be formed of, for example, an aluminum alloy. In order to further enhance the corrosion resistance, the first ceiling plate 611, the second ceiling plate 612 and the side wall portion 62 may be coated with Teflon (registered trademark).
　蓋体６には、蓋体アーム７１を介して蓋体移動機構７が連結されている。蓋体移動機構７は、蓋体６を水平方向および上下方向に移動させる。より具体的には、蓋体移動機構７は、蓋体６を水平方向に移動させる旋回モータ７２と、蓋体６を上下方向に移動させるシリンダ７３（間隔調節部）と、を有している。このうち旋回モータ７２は、シリンダ７３に対して上下方向に移動可能に設けられた支持プレート７４上に取り付けられている。シリンダ７３の代替えとして、モータとボールねじとを含むアクチュエータ（図示せず）を用いてもよい。 A lid moving mechanism 7 is connected to the lid 6 via a lid arm 71. The lid moving mechanism 7 moves the lid 6 in the horizontal direction and the vertical direction. More specifically, the lid moving mechanism 7 has a swivel motor 72 that moves the lid 6 in the horizontal direction, and a cylinder 73 (interval adjusting unit) that moves the lid 6 in the vertical direction. .. Of these, the swivel motor 72 is mounted on a support plate 74 provided so as to be movable in the vertical direction with respect to the cylinder 73. As an alternative to the cylinder 73, an actuator (not shown) including a motor and a ball screw may be used.
　蓋体移動機構７の旋回モータ７２は、蓋体６を、基板保持部５２に保持された基板Ｗの上方に配置された上方位置と、上方位置から退避した退避位置との間で移動させる。このうち上方位置は、基板保持部５２に保持された基板Ｗに対して比較的大きな間隔で対向する位置であって、上方から見た場合に基板Ｗに重なる位置である。退避位置は、チャンバ５１内のうち、上方から見た場合に基板Ｗに重ならない位置である。蓋体６が退避位置に位置づけられている場合、移動するノズルアーム５６が蓋体６と干渉することが回避される。旋回モータ７２の回転軸線は、上下方向に延びており、蓋体６は、上方位置と退避位置との間で、水平方向に旋回移動可能になっている。 The swivel motor 72 of the lid moving mechanism 7 moves the lid 6 between an upper position arranged above the substrate W held by the substrate holding portion 52 and a retracted position retracted from the upper position. Of these, the upper position is a position facing the substrate W held by the substrate holding portion 52 at a relatively large interval, and is a position overlapping the substrate W when viewed from above. The retracted position is a position in the chamber 51 that does not overlap the substrate W when viewed from above. When the lid 6 is positioned in the retracted position, it is possible to prevent the moving nozzle arm 56 from interfering with the lid 6. The rotation axis of the swivel motor 72 extends in the vertical direction, and the lid 6 can swivel and move in the horizontal direction between the upper position and the retracted position.
　蓋体移動機構７のシリンダ７３は、蓋体６を上下方向に移動させて、めっき液Ｌ１が供給された基板Ｗと天井部６１の第１天井板６１１との間隔を調節する。より具体的には、シリンダ７３は、蓋体６を下方位置（図２において実線で示す位置）と、上方位置（図２において二点鎖線で示す位置）とに位置づける。 The cylinder 73 of the lid moving mechanism 7 moves the lid 6 in the vertical direction to adjust the distance between the substrate W to which the plating solution L1 is supplied and the first ceiling plate 611 of the ceiling portion 61. More specifically, the cylinder 73 positions the lid 6 at a lower position (a position shown by a solid line in FIG. 2) and an upper position (a position shown by a two-dot chain line in FIG. 2).
　本実施形態では、ヒータ６３が駆動されて、上述した下方位置に蓋体６が位置づけられた場合に、基板保持部５２または基板Ｗ上のめっき液Ｌ１が加熱されるように構成されている。 In the present embodiment, when the heater 63 is driven and the lid 6 is positioned at the lower position described above, the substrate holding portion 52 or the plating solution L1 on the substrate W is heated.
　蓋体６の内側には、不活性ガス供給部６６によって不活性ガス（たとえば、窒素（Ｎ２）ガス）が供給される。この不活性ガス供給部６６は、蓋体６の内側に不活性ガスを吐出するガスノズル６６１と、ガスノズル６６１に不活性ガスを供給する不活性ガス供給源６６２と、を有している。このうち、ガスノズル６６１は、蓋体６の天井部６１に設けられており、蓋体６が基板Ｗを覆う状態で基板Ｗに向かって不活性ガスを吐出する。 An inert gas (for example, nitrogen (N2) gas) is supplied to the inside of the lid 6 by the inert gas supply unit 66. The inert gas supply unit 66 has a gas nozzle 661 that discharges the inert gas inside the lid 6, and an inert gas supply source 662 that supplies the inert gas to the gas nozzle 661. Of these, the gas nozzle 661 is provided on the ceiling portion 61 of the lid body 6 and discharges an inert gas toward the substrate W with the lid body 6 covering the substrate W.
　蓋体６の天井部６１および側壁部６２は、蓋体カバー６４により覆われている。この蓋体カバー６４は、蓋体６の第２天井板６１２上に、支持部６５を介して載置されている。すなわち、第２天井板６１２上に、第２天井板６１２の上面から上方に突出する複数の支持部６５が設けられており、この支持部６５に蓋体カバー６４が載置されている。蓋体カバー６４は、蓋体６とともに水平方向および上下方向に移動可能になっている。また、蓋体カバー６４は、蓋体６内の熱が周囲に逃げることを抑制するために、天井部６１および側壁部６２よりも高い断熱性を有していることが好ましい。たとえば、蓋体カバー６４は、樹脂材料により形成されていることが好適であり、その樹脂材料が耐熱性を有していることがより一層好適である。 The ceiling portion 61 and the side wall portion 62 of the lid body 6 are covered with the lid body cover 64. The lid cover 64 is placed on the second ceiling plate 612 of the lid 6 via a support portion 65. That is, a plurality of support portions 65 projecting upward from the upper surface of the second ceiling plate 612 are provided on the second ceiling plate 612, and the lid cover 64 is placed on the support portions 65. The lid cover 64 can be moved in the horizontal direction and the vertical direction together with the lid 6. Further, the lid cover 64 preferably has a higher heat insulating property than the ceiling portion 61 and the side wall portion 62 in order to prevent heat in the lid body 6 from escaping to the surroundings. For example, the lid cover 64 is preferably made of a resin material, and it is even more preferable that the resin material has heat resistance.
　このように本実施形態では、ヒータ６３を具備する蓋体６と蓋体カバー６４とが一体的に設けられ、下方位置に配置された場合に基板保持部５２または基板Ｗを覆うカバーユニット１０が、これらの蓋体６及び蓋体カバー６４によって構成される。 As described above, in the present embodiment, the lid body 6 provided with the heater 63 and the lid body cover 64 are integrally provided, and when the lid body cover 64 is arranged at a lower position, the board holding portion 52 or the cover unit 10 covering the board W is provided. , These lids 6 and lid covers 64.
　チャンバ５１の上部には、蓋体６の周囲に清浄な空気（気体）を供給するファンフィルターユニット５９（気体供給部）が設けられている。ファンフィルターユニット５９は、チャンバ５１内（とりわけ、雰囲気遮断カバー５７２内）に空気を供給し、供給された空気は、排気管８１に向かって流れる。蓋体６の周囲には、この空気が下向きに流れるダウンフローが形成され、めっき液Ｌ１などの処理液から気化したガスは、このダウンフローによって排気管８１に向かって流れる。このようにして、処理液から気化したガスが上昇してチャンバ５１内に拡散することを防止している。 A fan filter unit 59 (gas supply unit) that supplies clean air (gas) around the lid 6 is provided on the upper part of the chamber 51. The fan filter unit 59 supplies air into the chamber 51 (particularly, inside the atmosphere blocking cover 572), and the supplied air flows toward the exhaust pipe 81. A downflow through which this air flows downward is formed around the lid 6, and the gas vaporized from the treatment liquid such as the plating liquid L1 flows toward the exhaust pipe 81 by this downflow. In this way, the vaporized gas from the treatment liquid is prevented from rising and diffusing into the chamber 51.
　上述したファンフィルターユニット５９から供給された気体は、排気機構８によって排出されるようになっている。 The gas supplied from the fan filter unit 59 described above is exhausted by the exhaust mechanism 8.
＜基板処理装置の具体的動作＞
　次に、上述した基板処理装置１の具体的動作について図４～図１１を参照して説明する。図４は、実施形態に係る基板処理装置１が実行する処理の手順を示すフローチャートであり、図５は、実施形態に係る無電解めっき処理の手順を示すフローチャートである。また、図６は、基板処理装置１による処理前の基板Ｗの一例を示す図であり、図７は、保護膜形成処理後の基板Ｗの一例を示す図であり、図８は、表面シード層露出処理後の基板Ｗの一例を示す図である。また、図９は、表面シード層除去処理後の基板Ｗの一例を示す図であり、図１０は、保護膜除去処理後の基板Ｗの一例を示す図であり、図１１は、無電解めっき処理後の基板Ｗの一例を示す図である。なお、図４および図５に示す処理は、制御部９１による制御に従って実行される。 <Specific operation of board processing equipment>
Next, the specific operation of the substrate processing apparatus 1 described above will be described with reference to FIGS. 4 to 11. FIG. 4 is a flowchart showing a procedure of processing executed by the substrate processing apparatus 1 according to the embodiment, and FIG. 5 is a flowchart showing a procedure of electroless plating processing according to the embodiment. Further, FIG. 6 is a diagram showing an example of the substrate W before processing by the substrate processing apparatus 1, FIG. 7 is a diagram showing an example of the substrate W after the protective film forming treatment, and FIG. 8 is a surface seed. It is a figure which shows an example of the substrate W after a layer exposure process. Further, FIG. 9 is a diagram showing an example of the substrate W after the surface seed layer removal treatment, FIG. 10 is a diagram showing an example of the substrate W after the protective film removal treatment, and FIG. 11 is an electroless plating. It is a figure which shows an example of the substrate W after processing. The processes shown in FIGS. 4 and 5 are executed according to the control by the control unit 91.
　図４に示すように、基板処理装置１では、まず、保護膜形成処理が行われる（ステップＳ１０１）。保護膜形成処理では、まず、前処理部４に対して基板Ｗが搬入される。前処理部４に搬入された基板Ｗは、前処理部４の基板保持機構１２０に保持される。 As shown in FIG. 4, in the substrate processing apparatus 1, first, a protective film forming process is performed (step S101). In the protective film forming process, the substrate W is first carried into the pretreatment section 4. The substrate W carried into the pretreatment unit 4 is held by the substrate holding mechanism 120 of the pretreatment unit 4.
　ここで、図６に示すように、基板Ｗの表面（上面）には、トレンチやビア等の凹部５０１が形成される。また、基板Ｗの表面および凹部５０１の内面には、バリア層５０２およびシード層５０３が形成される。バリア層５０２およびシード層５０３は、基板Ｗに対してバリア層５０２、シード層５０３の順に積層される。バリア層５０２およびシード層５０３は、たとえばスパッタリング等により基板Ｗ上に積層される。バリア層５０２は、たとえばチタン（Ｔｉ）、窒化チタン（ＴｉＮ）等で構成され、シード層５０３は、たとえば銅（Ｃｕ）やコバルト（Ｃｏ）等の金属によって構成される。 Here, as shown in FIG. 6, recesses 501 such as trenches and vias are formed on the surface (upper surface) of the substrate W. Further, a barrier layer 502 and a seed layer 503 are formed on the surface of the substrate W and the inner surface of the recess 501. The barrier layer 502 and the seed layer 503 are laminated on the substrate W in the order of the barrier layer 502 and the seed layer 503. The barrier layer 502 and the seed layer 503 are laminated on the substrate W by, for example, sputtering. The barrier layer 502 is made of, for example, titanium (Ti), titanium nitride (TiN), or the like, and the seed layer 503 is made of, for example, a metal such as copper (Cu) or cobalt (Co).
　前処理部４は、基板保持機構１２０を用いて基板Ｗを保持した後、駆動部１２３を用いて保持部１２１を回転させる。これにより、保持部１２１とともに基板Ｗが回転する。つづいて、前処理部４は、移動機構１３６を用いてアーム１３５を移動させることにより、第１ノズル１３１を基板Ｗの中央上方に位置させる。その後、前処理部４は、第１バルブ１３７ａを一定時間開くことにより、第１ノズル１３１から基板Ｗの中央部に樹脂材料を供給する。基板Ｗの中央部に供給された樹脂材料は、基板Ｗの回転に伴う遠心力によって基板Ｗの表面全体に広がる。 The pretreatment unit 4 holds the substrate W by using the substrate holding mechanism 120, and then rotates the holding unit 121 by using the driving unit 123. As a result, the substrate W rotates together with the holding portion 121. Subsequently, the pretreatment unit 4 positions the first nozzle 131 above the center of the substrate W by moving the arm 135 using the moving mechanism 136. After that, the pretreatment unit 4 supplies the resin material from the first nozzle 131 to the central portion of the substrate W by opening the first valve 137a for a certain period of time. The resin material supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W.
　つづいて、前処理部４は、加熱部１４０を用いて基板Ｗを加熱することにより、基板Ｗ上に塗布された樹脂材料を加熱する。加熱部１４０による加熱温度は、たとえば、９０℃以上１３０℃未満である。樹脂材料が加熱されることにより、基板Ｗ上には樹脂による保護膜５０４が形成される（図７参照）。 Subsequently, the pretreatment unit 4 heats the resin material applied on the substrate W by heating the substrate W using the heating unit 140. The heating temperature by the heating unit 140 is, for example, 90 ° C. or higher and lower than 130 ° C. When the resin material is heated, a protective film 504 made of resin is formed on the substrate W (see FIG. 7).
　つづいて、前処理部４では、表面シード層露出処理が行われる（ステップＳ１０２）。表面シード層露出処理において、前処理部４は、移動機構１３６を用いてアーム１３５を移動させることにより、第２ノズル１３２を基板Ｗの中央上方に位置させる。その後、前処理部４は、第２バルブ１３７ｂを一定時間開くことにより、第２ノズル１３２から基板Ｗの中央部に第１除去液を供給する。上述したように、第１除去液は、たとえばＰＥＧＭＥＡ等の有機溶剤である。基板Ｗの中央部に供給された第１除去液は、基板Ｗの回転に伴う遠心力によって基板Ｗの表面全体に広がる。 Subsequently, in the pretreatment section 4, the surface seed layer exposure treatment is performed (step S102). In the surface seed layer exposure treatment, the pretreatment unit 4 positions the second nozzle 132 above the center of the substrate W by moving the arm 135 using the movement mechanism 136. After that, the pretreatment unit 4 supplies the first removing liquid from the second nozzle 132 to the central portion of the substrate W by opening the second valve 137b for a certain period of time. As described above, the first removing solution is an organic solvent such as PEGMEA. The first removing liquid supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W.
　表面シード層露出処理では、基板Ｗの表面に形成されたシード層５０３が保護膜５０４から露出するまで基板Ｗに対して第１除去液が供給される（図８参照）。このとき、表面シード層露出処理では、凹部５０１内に埋め込まれた保護膜５０４まで除去されないように、第１除去液の供給時間、流量、濃度などが調整される。 In the surface seed layer exposure treatment, the first removing liquid is supplied to the substrate W until the seed layer 503 formed on the surface of the substrate W is exposed from the protective film 504 (see FIG. 8). At this time, in the surface seed layer exposure treatment, the supply time, flow rate, concentration, etc. of the first removing liquid are adjusted so that the protective film 504 embedded in the recess 501 is not removed.
　なお、保護膜５０４を薄く形成した場合、凹部５０１の上方において保護膜５０４が凹むおそれがあり、表面シード層露出処理において、凹部５０１内に埋め込まれた保護膜５０４が必要以上に除去されてしまうおそれがある。このため、図７に示すように、保護膜５０４は、ある程度厚く形成されることが望ましい。 If the protective film 504 is thinly formed, the protective film 504 may be recessed above the recess 501, and the protective film 504 embedded in the recess 501 is removed more than necessary in the surface seed layer exposure treatment. There is a risk. Therefore, as shown in FIG. 7, it is desirable that the protective film 504 is formed to be thick to some extent.
　つづいて、前処理部４では、表面シード層除去処理が行われる（ステップＳ１０３）。表面シード層除去処理において、前処理部４は、移動機構１３６を用いてアーム１３５を移動させることにより、第３ノズル１３３を基板Ｗの中央上方に位置させる。その後、前処理部４は、第３バルブ１３７ｃを一定時間開くことにより、第３ノズル１３３から基板Ｗの中央部に第２除去液を供給する。上述したように、第２除去液は、たとえばＳＰＭやＦＰＭなどのエッチング液である。 Subsequently, in the pretreatment unit 4, the surface seed layer removal treatment is performed (step S103). In the surface seed layer removing process, the pretreatment unit 4 positions the third nozzle 133 above the center of the substrate W by moving the arm 135 using the moving mechanism 136. After that, the pretreatment unit 4 supplies the second removing liquid from the third nozzle 133 to the central portion of the substrate W by opening the third valve 137c for a certain period of time. As described above, the second removing liquid is an etching liquid such as SPM or FPM.
　基板Ｗの中央部に供給された第２除去液は、基板Ｗの回転に伴う遠心力によって基板Ｗの表面全体に広がる。これにより、基板Ｗの表面に形成されたシード層５０３が第２除去液によって除去される（図９参照）。一方、凹部５０１の内面に形成されたシード層５０３は、保護膜５０４によって覆われており、第２除去液と接触しないため基板Ｗ上に残る。 The second removing liquid supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W. As a result, the seed layer 503 formed on the surface of the substrate W is removed by the second removing liquid (see FIG. 9). On the other hand, the seed layer 503 formed on the inner surface of the recess 501 is covered with the protective film 504 and remains on the substrate W because it does not come into contact with the second removing liquid.
　つづいて、前処理部４では、保護膜除去処理が行われる（ステップＳ１０４）。保護膜除去処理において、前処理部４は、移動機構１３６を用いてアーム１３５を移動させることにより、第２ノズル１３２を基板Ｗの中央上方に位置させる。その後、前処理部４は、第２バルブ１３７ｂを一定時間開くことにより、第２ノズル１３２から基板Ｗの中央部に第１除去液を供給する。基板Ｗの中央部に供給された第１除去液は、基板Ｗの回転に伴う遠心力によって基板Ｗの表面全体に広がる。これにより、凹部５０１に埋め込まれた保護膜５０４が除去される（図１０参照）。 Subsequently, in the pretreatment unit 4, the protective film removal treatment is performed (step S104). In the protective film removing process, the pretreatment unit 4 moves the arm 135 by using the moving mechanism 136 to position the second nozzle 132 above the center of the substrate W. After that, the pretreatment unit 4 supplies the first removing liquid from the second nozzle 132 to the central portion of the substrate W by opening the second valve 137b for a certain period of time. The first removing liquid supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W. As a result, the protective film 504 embedded in the recess 501 is removed (see FIG. 10).
　保護膜除去処理では、凹部５０１内に埋め込まれた保護膜５０４が除去されるように、第１除去液の供給時間、流量、濃度などが調整される。なお、前処理部４は、表面シード層露出処理において使用される第１除去液と異なる種類の有機溶剤（第３除去液）を用いて保護膜除去処理を行ってもよい。 In the protective film removing process, the supply time, flow rate, concentration, etc. of the first removing liquid are adjusted so that the protective film 504 embedded in the recess 501 is removed. The pretreatment unit 4 may perform the protective film removal treatment using an organic solvent (third removal liquid) different from the first removal liquid used in the surface seed layer exposure treatment.
　つづいて、前処理部４では、リンス処理が行われる（ステップＳ１０５）。リンス処理において、前処理部４は、移動機構１３６を用いてアーム１３５を移動させることにより、第４ノズル１３４を基板Ｗの中央上方に位置させる。その後、前処理部４は、第３バルブ１３７ｃを一定時間開くことにより、第４ノズル１３４から基板Ｗの中央部にリンス液を供給する。基板Ｗの中央部に供給されたリンス液は、基板Ｗの回転に伴う遠心力によって基板Ｗの表面全体に広がる。これにより、基板Ｗ上に残存する第１除去液や保護膜５０４がリンス液によって基板Ｗ上から洗い流される。 Subsequently, in the pretreatment unit 4, a rinsing process is performed (step S105). In the rinsing process, the pretreatment unit 4 moves the arm 135 using the moving mechanism 136 to position the fourth nozzle 134 above the center of the substrate W. After that, the pretreatment unit 4 supplies the rinse liquid from the fourth nozzle 134 to the central portion of the substrate W by opening the third valve 137c for a certain period of time. The rinse liquid supplied to the central portion of the substrate W spreads over the entire surface of the substrate W due to the centrifugal force accompanying the rotation of the substrate W. As a result, the first removing liquid and the protective film 504 remaining on the substrate W are washed away from the substrate W by the rinsing liquid.
　つづいて、前処理部４では、乾燥処理が行われる（ステップＳ１０６）。乾燥処理において、前処理部４は、たとえば基板Ｗの回転数を増大させることによって基板Ｗを高速で回転させる。これにより、基板Ｗ上に残存するリンス液が振り切られて基板Ｗが乾燥する。 Subsequently, in the pretreatment unit 4, a drying treatment is performed (step S106). In the drying process, the pretreatment unit 4 rotates the substrate W at high speed by, for example, increasing the rotation speed of the substrate W. As a result, the rinsing liquid remaining on the substrate W is shaken off and the substrate W dries.
　乾燥処理が終了すると、基板Ｗは、基板搬送装置１７によって前処理部４から取り出されて、めっき処理部５に搬入される。そして、めっき処理部５において、無電解めっき処理が行われる（ステップＳ１０７）。無電解めっき処理の手順について図５を参照して説明する。 When the drying process is completed, the substrate W is taken out from the pretreatment unit 4 by the substrate transfer device 17 and carried into the plating processing unit 5. Then, the electroless plating process is performed in the plating process section 5 (step S107). The procedure of the electroless plating treatment will be described with reference to FIG.
　図５に示すように、まず、めっき処理部５に搬入された基板Ｗは、基板保持部５２に保持される（ステップＳ２０１）。ここでは、基板Ｗの下面が真空吸着されて、基板保持部５２に基板Ｗが水平に保持される。 As shown in FIG. 5, first, the substrate W carried into the plating processing unit 5 is held by the substrate holding unit 52 (step S201). Here, the lower surface of the substrate W is vacuum-sucked, and the substrate W is horizontally held by the substrate holding portion 52.
　つづいて、基板保持部５２に保持された基板Ｗが、洗浄処理される（ステップＳ２０２）。この場合、まず、回転モータ５２３が駆動されて基板Ｗが所定の回転数で回転する。つづいて、退避位置（図３における実線で示す位置）に位置づけられていたノズルアーム５６が、基板Ｗの中央上方の吐出位置に移動する。次に、回転する基板Ｗに、洗浄液ノズル５４１から洗浄液Ｌ２が供給されて、基板Ｗの表面が洗浄される。これにより、基板Ｗに付着した付着物等が、基板Ｗから除去される。基板Ｗに供給された洗浄液Ｌ２は、ドレンダクト５８１に排出される。 Subsequently, the substrate W held by the substrate holding portion 52 is cleaned (step S202). In this case, first, the rotation motor 523 is driven to rotate the substrate W at a predetermined rotation speed. Subsequently, the nozzle arm 56 positioned at the retracted position (the position shown by the solid line in FIG. 3) moves to the discharge position above the center of the substrate W. Next, the cleaning liquid L2 is supplied from the cleaning liquid nozzle 541 to the rotating substrate W to clean the surface of the substrate W. As a result, deposits and the like adhering to the substrate W are removed from the substrate W. The cleaning liquid L2 supplied to the substrate W is discharged to the drain duct 581.
　つづいて、洗浄処理された基板Ｗがリンス処理される（ステップＳ２０３）。この場合、回転する基板Ｗに、リンス液ノズル５５１からリンス液Ｌ３が供給されて、基板Ｗの表面がリンス処理される。これにより、基板Ｗ上に残存する洗浄液Ｌ２が洗い流される。基板Ｗに供給されたリンス液Ｌ３はドレンダクト５８１に排出される。 Subsequently, the cleaned substrate W is rinsed (step S203). In this case, the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W, and the surface of the substrate W is rinsed. As a result, the cleaning liquid L2 remaining on the substrate W is washed away. The rinse liquid L3 supplied to the substrate W is discharged to the drain duct 581.
　つづいて、リンス処理された基板Ｗ上にめっき液Ｌ１が供給されて盛り付けられる（ステップＳ２０４）。この場合、まず、基板Ｗの回転数を、リンス処理時の回転数よりも低減させる。たとえば、基板Ｗの回転数を５０～１５０ｒｐｍにしてもよい。これにより、基板Ｗ上に形成されるめっき膜を均一化させることができる。なお、基板Ｗの回転は停止させてもよい。 Subsequently, the plating solution L1 is supplied and served on the rinsed substrate W (step S204). In this case, first, the rotation speed of the substrate W is reduced to be lower than the rotation speed during the rinsing process. For example, the rotation speed of the substrate W may be 50 to 150 rpm. As a result, the plating film formed on the substrate W can be made uniform. The rotation of the substrate W may be stopped.
　つづいて、めっき液ノズル５３１から基板Ｗの表面にめっき液Ｌ１が吐出される。吐出されためっき液Ｌ１は、表面張力によって基板Ｗの表面に留まり、めっき液が基板Ｗの表面に盛り付けられて、めっき液Ｌ１の層（いわゆるパドル）が形成される。めっき液Ｌ１の一部は、基板Ｗの表面からから流出し、ドレンダクト５８１から排出される。所定量のめっき液Ｌ１がめっき液ノズル５３１から吐出された後、めっき液Ｌ１の吐出が停止される。その後、吐出位置に位置づけられていたノズルアーム５６が、退避位置に位置づけられる。 Subsequently, the plating solution L1 is discharged from the plating solution nozzle 531 to the surface of the substrate W. The discharged plating solution L1 stays on the surface of the substrate W due to surface tension, and the plating solution is placed on the surface of the substrate W to form a layer (so-called paddle) of the plating solution L1. A part of the plating solution L1 flows out from the surface of the substrate W and is discharged from the drain duct 581. After a predetermined amount of the plating solution L1 is discharged from the plating solution nozzle 531, the discharge of the plating solution L1 is stopped. After that, the nozzle arm 56, which has been positioned at the discharge position, is positioned at the retracted position.
　つづいて、基板Ｗ上に盛り付けられためっき液Ｌ１が加熱される。まず、基板Ｗが蓋体６によって覆われる（ステップＳ２０５）。この場合、まず、蓋体移動機構７の旋回モータ７２が駆動されて、蓋体６が水平方向に旋回移動して、上方位置（図３における二点鎖線で示す位置）に位置づけられる。 Subsequently, the plating solution L1 placed on the substrate W is heated. First, the substrate W is covered with the lid 6 (step S205). In this case, first, the swivel motor 72 of the lid moving mechanism 7 is driven, and the lid 6 swivels in the horizontal direction and is positioned at an upper position (the position indicated by the alternate long and short dash line in FIG. 3).
　つづいて、蓋体移動機構７のシリンダ７３が駆動されて、上方位置に位置づけられた蓋体６が下降して、第１間隔位置に位置づけられる。これにより、基板Ｗと蓋体６の第１天井板６１１との間隔が第１間隔になり、蓋体６の側壁部６２が、基板Ｗの外周側に配置される。本実施形態では、蓋体６の側壁部６２の下端６２１が、基板Ｗの下面よりも低い位置に位置づけられる。このようにして、基板Ｗが蓋体６によって覆われて、基板Ｗの周囲の空間が閉塞化される。 Subsequently, the cylinder 73 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position is lowered to be positioned at the first interval position. As a result, the distance between the substrate W and the first ceiling plate 611 of the lid 6 becomes the first interval, and the side wall portion 62 of the lid 6 is arranged on the outer peripheral side of the substrate W. In the present embodiment, the lower end 621 of the side wall portion 62 of the lid 6 is positioned at a position lower than the lower surface of the substrate W. In this way, the substrate W is covered with the lid 6, and the space around the substrate W is closed.
　基板Ｗが蓋体６によって覆われた後、蓋体６の天井部６１に設けられたガスノズル６６１が、蓋体６の内側に不活性ガスを吐出する（ステップＳ２０６）。これにより、蓋体６の内側が不活性ガスに置換され、基板Ｗの周囲が低酸素雰囲気になる。不活性ガスは、所定時間吐出され、その後、不活性ガスの吐出を停止する。 After the substrate W is covered with the lid 6, the gas nozzle 661 provided on the ceiling 61 of the lid 6 discharges the inert gas inside the lid 6 (step S206). As a result, the inside of the lid 6 is replaced with an inert gas, and the periphery of the substrate W becomes a hypoxic atmosphere. The inert gas is discharged for a predetermined time, and then the discharge of the inert gas is stopped.
　つづいて基板Ｗ上に盛り付けられためっき液Ｌ１がヒータ６３によって加熱される（ステップＳ２０７）。めっき液Ｌ１の温度が、成分が析出する温度まで上昇すると、シード層５０３の表面にめっき液Ｌ１の成分が析出し、めっき膜５０６が形成される（図１１参照）。 Subsequently, the plating solution L1 placed on the substrate W is heated by the heater 63 (step S207). When the temperature of the plating solution L1 rises to the temperature at which the components are precipitated, the components of the plating solution L1 are precipitated on the surface of the seed layer 503, and the plating film 506 is formed (see FIG. 11).
　つづいて、蓋体移動機構７が駆動されて、蓋体６が退避位置に位置づけられる（ステップＳ２０８）。この場合、まず、蓋体移動機構７のシリンダ７３が駆動されることにより、蓋体６が上昇して上方位置に位置づけられる。その後、蓋体移動機構７の旋回モータ７２が駆動されて、上方位置に位置づけられた蓋体６が水平方向に旋回移動して、退避位置に位置づけられる。 Subsequently, the lid body moving mechanism 7 is driven, and the lid body 6 is positioned at the retracted position (step S208). In this case, first, the cylinder 73 of the lid moving mechanism 7 is driven to raise the lid 6 and position it in the upper position. After that, the swivel motor 72 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position swivels in the horizontal direction and is positioned at the retracted position.
　つづいて、基板Ｗは、リンス処理される（ステップＳ２０９）。この場合、まず、基板Ｗの回転数を、めっき処理時の回転数よりも増大させる。たとえば、めっき処理前のリンス処理（ステップＳ２０３）と同様の回転数で基板Ｗを回転させる。つづいて、退避位置に位置づけられていたリンス液ノズル５５１が、吐出位置に移動する。次に、回転する基板Ｗに、リンス液ノズル５５１からリンス液Ｌ３が供給されて、基板Ｗの表面が洗浄される。これにより、基板Ｗ上に残存するめっき液Ｌ１が洗い流される。 Subsequently, the substrate W is rinsed (step S209). In this case, first, the rotation speed of the substrate W is increased more than the rotation speed during the plating process. For example, the substrate W is rotated at the same rotation speed as the rinsing process (step S203) before the plating process. Subsequently, the rinse liquid nozzle 551, which has been positioned at the retracted position, moves to the discharge position. Next, the rinse liquid L3 is supplied from the rinse liquid nozzle 551 to the rotating substrate W to clean the surface of the substrate W. As a result, the plating solution L1 remaining on the substrate W is washed away.
　つづいて、リンス処理された基板Ｗが乾燥処理される（ステップＳ２１０）。この場合、たとえば、基板Ｗの回転数を、リンス処理（ステップＳ２０９）の回転数よりも増大させて、基板Ｗを高速で回転させる。これにより、基板Ｗ上に残存するリンス液Ｌ３が振り切られて基板Ｗが乾燥する。 Subsequently, the rinsed substrate W is dried (step S210). In this case, for example, the rotation speed of the substrate W is increased to be higher than the rotation speed of the rinsing process (step S209) to rotate the substrate W at a high speed. As a result, the rinse liquid L3 remaining on the substrate W is shaken off and the substrate W dries.
　乾燥処理が終了すると、基板Ｗは、基板搬送装置１７によってめっき処理部５から取り出されて受渡部１４に搬送される。また、受渡部１４に搬送された基板Ｗは、基板搬送装置１３によって受渡部１４から取り出されてキャリアＣに収容される。 When the drying process is completed, the substrate W is taken out from the plating processing section 5 by the substrate transport device 17 and transported to the delivery section 14. Further, the substrate W conveyed to the delivery unit 14 is taken out from the delivery unit 14 by the substrate transfer device 13 and accommodated in the carrier C.
　このように、実施形態に係る基板処理装置１では、基板Ｗの表面に形成されたシード層５０３を除去した後で、無電解めっき法による凹部５０１への金属の埋め込みを行うこととした。 As described above, in the substrate processing apparatus 1 according to the embodiment, after removing the seed layer 503 formed on the surface of the substrate W, the metal is embedded in the recess 501 by the electroless plating method.
　基板Ｗの表面に形成されたシード層５０３を除去することで、凹部５０１の開口縁部に形成されたシード層５０３も除去される。これにより、凹部５０１内全体がめっき膜で埋まる前に凹部５０１の開口部がめっき膜によって閉ざされてしまう所謂ピンチオフが生じ難くなることから、ボイドやシーム等の欠陥が凹部５０１内に形成されることを抑制することができる。 By removing the seed layer 503 formed on the surface of the substrate W, the seed layer 503 formed on the opening edge of the recess 501 is also removed. As a result, so-called pinch-off in which the opening of the recess 501 is closed by the plating film before the entire inside of the recess 501 is filled with the plating film is less likely to occur, so that defects such as voids and seams are formed in the recess 501. Can be suppressed.
　また、基板Ｗの表面に形成されたシード層５０３を除去する際に、凹部５０１の内面に形成されたシード層５０３を樹脂材料で保護しておくことで、凹部５０１の内面に形成されたシード層５０３まで除去されてしまうことを抑制することができる。近年では、ピンチオフの発生を抑制するために、シード層５０３の膜厚を薄くすることが検討されている。しかしながら、シード層５０３の膜厚が薄くなるほど、凹部５０１の内面に形成されたシード層５０３を残しつつ、基板Ｗの表面に形成されたシード層５０３のみを除去することが困難となっている。これに対し、凹部５０１の内面に形成されたシード層５０３を樹脂材料で保護しておくことで、基板Ｗの表面に形成されたシード層５０３のみを適切に除去することができる。 Further, when the seed layer 503 formed on the surface of the substrate W is removed, the seed layer 503 formed on the inner surface of the recess 501 is protected by a resin material, so that the seed formed on the inner surface of the recess 501 is formed. It is possible to prevent the layer 503 from being removed. In recent years, in order to suppress the occurrence of pinch-off, it has been studied to reduce the film thickness of the seed layer 503. However, as the film thickness of the seed layer 503 becomes thinner, it becomes difficult to remove only the seed layer 503 formed on the surface of the substrate W while leaving the seed layer 503 formed on the inner surface of the recess 501. On the other hand, by protecting the seed layer 503 formed on the inner surface of the recess 501 with a resin material, only the seed layer 503 formed on the surface of the substrate W can be appropriately removed.
　また、実施形態に係る基板処理装置１によれば、表面シード層除去処理を行うことで、基板Ｗの表面に形成されたバリア層５０２がシード層５０３から露出する。バリア層５０２がシード層５０３から露出することで、シード層５０３から露出したバリア層５０２が酸化されて電子が発生する。発生した電子は、凹部５０１の内面に形成されたシード層５０３を伝って凹部５０１の下部に集中する。 Further, according to the substrate processing apparatus 1 according to the embodiment, the barrier layer 502 formed on the surface of the substrate W is exposed from the seed layer 503 by performing the surface seed layer removing treatment. When the barrier layer 502 is exposed from the seed layer 503, the barrier layer 502 exposed from the seed layer 503 is oxidized to generate electrons. The generated electrons are transmitted to the seed layer 503 formed on the inner surface of the recess 501 and concentrated in the lower part of the recess 501.
　これにより、凹部５０１の底面におけるめっき膜５０６の成長が促進される。すなわち、めっき膜５０６を凹部５０１の底面からボトムアップさせることができるため、これによっても、ボイドやシーム等の欠陥が凹部５０１内に形成されることを抑制することができる。 This promotes the growth of the plating film 506 on the bottom surface of the recess 501. That is, since the plating film 506 can be bottomed up from the bottom surface of the recess 501, it is also possible to prevent defects such as voids and seams from being formed in the recess 501.
＜変形例＞
　上述した実施形態では、表面シード層露出処理（図４のステップＳ１０２）および保護膜除去処理（図４のステップＳ１０４）が処理液を用いたウェット処理によって行われる実行する場合の例について説明した。これに限らず、表面シード層露出処理および保護膜除去処理は、アッシング（灰化）によって行われてもよい。 <Modification example>
In the above-described embodiment, an example in which the surface seed layer exposure treatment (step S102 in FIG. 4) and the protective film removal treatment (step S104 in FIG. 4) are performed by a wet treatment using a treatment liquid has been described. Not limited to this, the surface seed layer exposure treatment and the protective film removal treatment may be performed by ashing (ashing).
　かかる場合における基板処理装置の例について図１２を参照して説明する。図１２は、変形例に係る基板処理装置の構成を示す図である。また、図１３は、変形例に係る第２前処理部の構成を示す図である。 An example of the substrate processing apparatus in such a case will be described with reference to FIG. FIG. 12 is a diagram showing a configuration of a substrate processing apparatus according to a modified example. Further, FIG. 13 is a diagram showing a configuration of a second pretreatment unit according to a modified example.
　図１２に示すように、変形例に係る基板処理装置１Ａは、第１装置１Ａ１と、第２装置１Ａ２とを備える。 As shown in FIG. 12, the substrate processing device 1A according to the modified example includes a first device 1A1 and a second device 1A2.
　第１装置１Ａ１は、第１前処理部４Ａ１と、上述しためっき処理部５とを含んで構成される。第１前処理部４Ａ１は、たとえば、上述した前処理部４から、第２ノズル１３２、第２バルブ１３７ｂおよび第１除去液供給源１３８ｂを省略した構成を有する。第１前処理部４Ａ１では、たとえば、保護膜形成処理（図４のステップＳ１０１）および表面シード層除去処理（図４のステップＳ１０３）が行われる。 The first apparatus 1A1 includes a first pretreatment unit 4A1 and a plating processing unit 5 described above. The first pretreatment unit 4A1 has, for example, a configuration in which the second nozzle 132, the second valve 137b, and the first removal liquid supply source 138b are omitted from the pretreatment unit 4 described above. In the first pretreatment unit 4A1, for example, a protective film forming treatment (step S101 in FIG. 4) and a surface seed layer removing treatment (step S103 in FIG. 4) are performed.
　なお、第１装置１Ａ１は、第１前処理部４Ａ１およびめっき処理部５の他、キャリア載置台や基板搬送装置などを含んで構成される。 The first device 1A1 includes a carrier mounting table, a substrate transfer device, and the like, in addition to the first pretreatment section 4A1 and the plating treatment section 5.
　第２装置１Ａ２は、第２前処理部４Ａ２を含んで構成される。第２前処理部４Ａ２は、プラズマ処理装置である。 The second device 1A2 includes a second pretreatment unit 4A2. The second pretreatment unit 4A2 is a plasma processing apparatus.
　図１３に示すように、第２前処理部４Ａ２は、容器４０１と、排気管４０２とを備える。容器４０１内には、供給管４０３を介してＡｒガスまたは酸素（Ｏ２）ガスが供給される。容器４０１内のガスは、排気管４０２から排気される。ここでは、容器４０１内が常圧雰囲気であるものとするが、容器４０１内は真空雰囲気であってもよい。 As shown in FIG. 13, the second pretreatment unit 4A2 includes a container 401 and an exhaust pipe 402. Ar gas or oxygen (O2) gas is supplied into the container 401 via the supply pipe 403. The gas in the container 401 is exhausted from the exhaust pipe 402. Here, it is assumed that the inside of the container 401 has a normal pressure atmosphere, but the inside of the container 401 may have a vacuum atmosphere.
　容器４０１内には、下部電極４０４が設けられており、下部電極４０４には、基板Ｗが載置される。基板Ｗが載置される下部電極４０４の面と対向する位置には、ハウジング４０５が設けられている。ハウジング４０５内には、上部電極４０６が配置されている。上部電極４０６には、高周波電源４０７が接続されている。 A lower electrode 404 is provided in the container 401, and the substrate W is placed on the lower electrode 404. A housing 405 is provided at a position facing the surface of the lower electrode 404 on which the substrate W is placed. An upper electrode 406 is arranged in the housing 405. A high frequency power supply 407 is connected to the upper electrode 406.
　下部電極４０４上に基板Ｗが載置された後に、容器４０１内にＡｒガスが供給される。そして、高周波電源４０７から上部電極４０６に所定周波数の高周波電力が印加されることにより、容器４０１内にＡｒガスのプラズマが励起される。Ａｒガスのプラズマが励起した後に、容器４０１内にＯ２ガスがさらに供給されることにより、保護膜５０４がアッシング（灰下）されて基板Ｗから除去される。 After the substrate W is placed on the lower electrode 404, Ar gas is supplied into the container 401. Then, the high-frequency power of a predetermined frequency is applied from the high-frequency power source 407 to the upper electrode 406 to excite the Ar gas plasma in the container 401. After the plasma of Ar gas is excited, the protective film 504 is ashed (under ashed) and removed from the substrate W by further supplying O2 gas into the container 401.
　このようにして、第２前処理部４Ａ２は、表面シード層露出処理（図４のステップＳ１０２）および保護膜除去処理をアッシング処理によって行う。 In this way, the second pretreatment unit 4A2 performs the surface seed layer exposure treatment (step S102 in FIG. 4) and the protective film removal treatment by an ashing treatment.
　変形例に係る基板処理装置１Ａでは、第１装置１Ａ１の第１前処理部４Ａ１において保護膜形成処理（図４のステップＳ１０１）が行われた後、保護膜形成処理後の基板Ｗを第２装置１Ａ２の第２前処理部４Ａ２へ搬送する。つづいて、第２前処理部４Ａ２において表面シード層露出処理（図４のステップＳ１０２）が行われた後、表面シード層露出処理後の基板Ｗを第１前処理部４Ａ１へ搬送する。 In the substrate processing apparatus 1A according to the modified example, after the protective film forming treatment (step S101 in FIG. 4) is performed in the first pretreatment unit 4A1 of the first apparatus 1A1, the substrate W after the protective film forming treatment is seconded. It is conveyed to the second pretreatment unit 4A2 of the apparatus 1A2. Subsequently, after the surface seed layer exposure treatment (step S102 in FIG. 4) is performed in the second pretreatment section 4A2, the substrate W after the surface seed layer exposure treatment is conveyed to the first pretreatment section 4A1.
　つづいて、第１前処理部４Ａ１において表面シード層除去処理（図４のステップＳ１０３）、リンス処理（図４のステップＳ１０５）および乾燥処理（図４のステップＳ１０６）が行われた後、表面シード層除去処理後の基板Ｗを第２前処理部４Ａ２へ搬送する。つづいて、第２前処理部４Ａ２において保護膜除去処理（図４のステップＳ１０４）が行われた後、保護膜除去処理後の基板Ｗをめっき処理部５へ搬送する。 Subsequently, the surface seed layer removal treatment (step S103 in FIG. 4), the rinsing treatment (step S105 in FIG. 4), and the drying treatment (step S106 in FIG. 4) are performed in the first pretreatment unit 4A1, and then the surface seed is performed. The substrate W after the layer removal treatment is conveyed to the second pretreatment unit 4A2. Subsequently, after the protective film removing treatment (step S104 in FIG. 4) is performed in the second pretreatment unit 4A2, the substrate W after the protective film removal treatment is conveyed to the plating processing unit 5.
　ここでは、表面シード層露出処理および保護膜除去処理をアッシング処理によって行うこととしたが、基板処理装置１Ａは、たとえば、表面シード層露出処理をウェット処理によって行い、保護膜除去処理をアッシング処理によって行ってもよい。 Here, the surface seed layer exposure treatment and the protective film removal treatment are performed by the ashing treatment, but the substrate processing apparatus 1A performs, for example, the surface seed layer exposure treatment by the wet treatment and the protective film removal treatment by the ashing treatment. You may go.
＜その他の変形例＞
　表面シード層除去処理についても、必ずしもウェット処理で行われることを要しない。たとえば、表面シード層除去処理は、プラズマ処理や逆スパッタリング処理などによって行われてもよい。たとえば、表面シード層除去処理は、第２前処理部４Ａ２を用いて行われてもよい。 <Other variants>
The surface seed layer removal treatment does not necessarily have to be performed by a wet treatment. For example, the surface seed layer removal treatment may be performed by a plasma treatment, a reverse sputtering treatment, or the like. For example, the surface seed layer removal treatment may be performed using the second pretreatment unit 4A2.
　上述した実施形態では、保護膜形成処理、表面シード層露出処理、表面シード層除去処理および保護膜除去処理をウェット処理にて行う場合に、これらの処理を単一の前処理部４を用いて行うこととした。これに限らず、保護膜形成処理、表面シード層露出処理、表面シード層除去処理および保護膜除去処理は、複数の前処理部を用いて行われてもよい。たとえば、樹脂材料の塗布および除去に関する保護膜形成処理、表面シード層露出処理および保護膜除去処理と、シード層５０３の除去に関する表面シード層除去処理とを２つの異なる前処理装置を用いて行ってもよい。 In the above-described embodiment, when the protective film forming treatment, the surface seed layer exposure treatment, the surface seed layer removing treatment and the protective film removing treatment are performed by a wet treatment, these treatments are performed by using a single pretreatment unit 4. I decided to do it. Not limited to this, the protective film forming treatment, the surface seed layer exposure treatment, the surface seed layer removing treatment and the protective film removing treatment may be performed using a plurality of pretreatment sections. For example, a protective film forming treatment for coating and removing a resin material, a surface seed layer exposure treatment and a protective film removing treatment, and a surface seed layer removing treatment for removing the seed layer 503 are performed using two different pretreatment devices. May be good.
　また、保護膜形成処理、表面シード層露出処理、表面シード層除去処理および保護膜除去処理をウェット処理にて行う場合、これらの処理は、めっき処理部５において行われてもよい。この場合、めっき処理部５は、たとえば、図３に示す構成に加え、液供給部１３０および加熱部１４０等をさらに備えていればよい。 Further, when the protective film forming treatment, the surface seed layer exposure treatment, the surface seed layer removing treatment and the protective film removing treatment are performed by a wet treatment, these treatments may be performed by the plating processing unit 5. In this case, for example, the plating processing unit 5 may further include a liquid supply unit 130, a heating unit 140, and the like in addition to the configuration shown in FIG.
　上述してきたように、実施形態に係る基板処理方法は、準備工程と、埋込工程（一例として、保護膜形成処理）と、表面シード層除去工程（一例として、表面シード層除去処理）と、樹脂材料除去工程（一例として、保護膜除去処理）と、めっき工程（一例として、無電解めっき処理）とを含む。準備工程は、表面に凹部（一例として、凹部５０１）が形成され、且つ、表面および凹部の内面にシード層（一例として、シード層５０３）が形成された基板（一例として、基板Ｗ）を準備する。埋込工程は、凹部に樹脂材料を埋め込む。表面シード層除去工程は、凹部の内面に形成されたシード層を樹脂材料（一例として、保護膜５０４）で保護しつつ、基板の表面に形成されたシード層を除去する。樹脂材料除去工程は、表面シード層除去工程後、凹部に埋め込まれた樹脂材料を除去する。めっき工程は、樹脂材料除去工程後、凹部に無電解めっき法によるめっき膜（一例として、めっき膜５０６）を形成して凹部をめっき膜で埋める。 As described above, the substrate treatment method according to the embodiment includes a preparation step, an embedding step (for example, a protective film forming treatment), a surface seed layer removing step (for example, a surface seed layer removing treatment), and the like. It includes a resin material removing step (as an example, a protective film removing treatment) and a plating step (as an example, an electroless plating treatment). In the preparation step, a substrate (as an example, substrate W) having a recess (as an example, recess 501) formed on the surface and a seed layer (as an example, seed layer 503) formed on the surface and the inner surface of the recess is prepared. To do. In the embedding step, a resin material is embedded in the recess. The surface seed layer removing step removes the seed layer formed on the surface of the substrate while protecting the seed layer formed on the inner surface of the recess with a resin material (for example, a protective film 504). In the resin material removing step, the resin material embedded in the recess is removed after the surface seed layer removing step. In the plating step, after the resin material removing step, a plating film (for example, plating film 506) by an electroless plating method is formed in the recesses, and the recesses are filled with the plating film.
　基板の表面に形成されたシード層を除去することで、凹部の開口縁部に形成されたシード層も除去される。これにより、凹部内全体がめっき膜で埋まる前に凹部の開口部がめっき膜によって閉ざされてしまう所謂ピンチオフが生じ難くなることから、ボイドやシーム等の欠陥が凹部内に形成されることを抑制することができる。 By removing the seed layer formed on the surface of the substrate, the seed layer formed on the opening edge of the recess is also removed. As a result, so-called pinch-off, in which the opening of the recess is closed by the plating film before the entire recess is filled with the plating film, is less likely to occur, so that defects such as voids and seams are suppressed from being formed in the recess. can do.
　埋込工程は、基板の表面に樹脂材料を塗布する工程である。この場合、実施形態に係る基板処理方法は、表面シード層露出工程（一例として、表面シード層露出工程）をさらに含んでいてもよい。表面シード層露出工程は、埋込工程後、表面シード層除去工程前に、基板の表面に塗布された樹脂材料を除去することにより、基板の表面に形成されたシード層を樹脂材料から露出させる。これにより、基板の表面に形成されたシード層のみを露出させることができる。 The embedding process is a process of applying a resin material to the surface of the substrate. In this case, the substrate processing method according to the embodiment may further include a surface seed layer exposure step (for example, a surface seed layer exposure step). In the surface seed layer exposure step, the seed layer formed on the surface of the substrate is exposed from the resin material by removing the resin material applied to the surface of the substrate after the embedding step and before the surface seed layer removal step. .. As a result, only the seed layer formed on the surface of the substrate can be exposed.
　埋込工程、表面シード層露出工程、表面シード層除去工程、樹脂材料除去工程は、液体を用いたウェット処理により行われてもよい。これにより、実施形態に係る基板処理方法を単一の装置により実現することが容易となる。 The embedding step, the surface seed layer exposing step, the surface seed layer removing step, and the resin material removing step may be performed by a wet treatment using a liquid. This makes it easy to realize the substrate processing method according to the embodiment with a single device.
　表面シード層露出工程および樹脂材料除去工程は、アッシング処理により行われてもよい。アッシング処理によっても、樹脂材料を除去することが可能である。 The surface seed layer exposure step and the resin material removal step may be performed by an ashing process. The resin material can also be removed by ashing.
　また、実施形態に係る基板処理装置（一例として、基板処理装置１，１Ａ）は、埋込処理部（一例として、前処理部４、第１前処理部４Ａ１）と、表面シード層除去部（一例として、前処理部４、第１前処理部４Ａ１、第２前処理部４Ａ２）と、樹脂材料除去部（一例として、前処理部４、第１前処理部４Ａ１、第２前処理部４Ａ２）と、めっき処理部（一例として、めっき処理部５）とを備える。埋込処理部は、表面に凹部（一例として、凹部５０１）が形成され、且つ、表面および凹部の内面にシード層（一例として、シード層５０３）が形成された基板の凹部に樹脂材料を埋め込む。表面シード層除去部は、凹部の内面に形成されたシード層を樹脂材料で保護しつつ、基板の表面に形成されたシード層を除去する。樹脂材料除去部は、凹部に埋め込まれた樹脂材料を除去する。めっき処理部は、凹部に無電解めっき法によるめっき膜（一例として、めっき膜５０６）を形成して凹部をめっき膜で埋める。これにより、凹部への金属の埋め込みをボイドやシーム等の欠陥を生じさせることなく行うことができる。 Further, the substrate processing apparatus (as an example, the substrate processing apparatus 1, 1A) according to the embodiment includes an embedding processing unit (as an example, a pretreatment unit 4, a first pretreatment unit 4A1) and a surface seed layer removing unit (as an example). As an example, a pretreatment section 4, a first pretreatment section 4A1, a second pretreatment section 4A2) and a resin material removing section (as an example, a pretreatment section 4, a first pretreatment section 4A1, a second pretreatment section 4A2). ) And a plating processing unit (as an example, a plating processing unit 5). In the embedding treatment unit, the resin material is embedded in the recesses of the substrate having recesses (as an example, recess 501) formed on the surface and seed layers (seed layer 503 as an example) formed on the surface and the inner surface of the recesses. .. The surface seed layer removing portion removes the seed layer formed on the surface of the substrate while protecting the seed layer formed on the inner surface of the recess with the resin material. The resin material removing portion removes the resin material embedded in the recess. In the plating treatment section, a plating film (for example, plating film 506) by an electroless plating method is formed in the recesses, and the recesses are filled with the plating film. As a result, the metal can be embedded in the recess without causing defects such as voids and seams.
　今回開示された実施形態は全ての点で例示であって制限的なものではないと考えられるべきである。実に、上記した実施形態は多様な形態で具現され得る。また、上記の実施形態は、添付の請求の範囲およびその趣旨を逸脱することなく、様々な形態で省略、置換、変更されてもよい。 The embodiments disclosed this time should be considered to be exemplary in all respects and not restrictive. Indeed, the above embodiments can be embodied in a variety of forms. In addition, the above-described embodiment may be omitted, replaced, or changed in various forms without departing from the scope of the appended claims and the purpose thereof.
Ｗ　基板
１　基板処理装置
４　前処理部
５　めっき処理部
９　制御装置
１３１　第１ノズル
１３２　第２ノズル
１３３　第３ノズル
１３８ａ　樹脂材料供給源
１３８ｂ　第１除去液供給源
１３８ｃ　第２除去液供給源　
　 W Substrate 1 Substrate processing device 4 Pretreatment unit 5 Plating processing unit 9 Control device 131 1st nozzle 132 2nd nozzle 133 3rd nozzle 138a Resin material supply source 138b 1st removal liquid supply source 138c 2nd removal liquid supply source

Claims (5)

  1. 　表面に凹部が形成され、且つ、前記表面および前記凹部の内面にシード層が形成された基板を準備する準備工程と、
    　前記凹部に樹脂材料を埋め込む埋込工程と、
    　前記凹部の内面に形成された前記シード層を前記樹脂材料で保護しつつ、前記基板の前記表面に形成された前記シード層を除去する表面シード層除去工程と、
    　前記表面シード層除去工程後、前記凹部に埋め込まれた前記樹脂材料を除去する樹脂材料除去工程と、
    　前記樹脂材料除去工程後、前記凹部に無電解めっき法によるめっき膜を形成して前記凹部を前記めっき膜で埋めるめっき工程と
    　を含む、基板処理方法。     A preparatory step of preparing a substrate having a recess formed on the surface and a seed layer formed on the surface and the inner surface of the recess.
    The embedding process of embedding a resin material in the recess and
    A surface seed layer removing step of removing the seed layer formed on the surface of the substrate while protecting the seed layer formed on the inner surface of the recess with the resin material.
    After the surface seed layer removing step, a resin material removing step of removing the resin material embedded in the recess is
    A substrate processing method including a plating step of forming a plating film by an electroless plating method in the recesses after the resin material removing step and filling the recesses with the plating film.
  2. 　前記埋込工程は、
    　前記基板の前記表面に前記樹脂材料を塗布する工程であって、
    　前記埋込工程後、前記表面シード層除去工程前に、前記基板の前記表面に塗布された前記樹脂材料を除去することにより、前記基板の前記表面に形成された前記シード層を前記樹脂材料から露出させる表面シード層露出工程
    　をさらに含む、請求項１に記載の基板処理方法。     The embedding step is
    A step of applying the resin material to the surface of the substrate.
    After the embedding step and before the surface seed layer removing step, the resin material applied to the surface of the substrate is removed to remove the seed layer formed on the surface of the substrate from the resin material. The substrate processing method according to claim 1, further comprising an exposure step of a surface seed layer to be exposed.
  3. 　前記埋込工程、前記表面シード層露出工程、前記表面シード層除去工程、前記樹脂材料除去工程は、液体を用いたウェット処理により行われる、請求項２に記載の基板処理方法。 The substrate processing method according to claim 2, wherein the embedding step, the surface seed layer exposing step, the surface seed layer removing step, and the resin material removing step are performed by a wet treatment using a liquid.
  4. 　前記表面シード層露出工程および前記樹脂材料除去工程は、アッシング処理により行われる、請求項２に記載の基板処理方法。 The substrate processing method according to claim 2, wherein the surface seed layer exposure step and the resin material removal step are performed by an ashing process.
  5. 　表面に凹部が形成され、且つ、前記表面および前記凹部の内面にシード層が形成された基板の前記凹部に樹脂材料を埋め込む埋込処理部と、
    　前記凹部の内面に形成された前記シード層を前記樹脂材料で保護しつつ、前記基板の前記表面に形成された前記シード層を除去する表面シード層除去部と、
    　前記凹部に埋め込まれた前記樹脂材料を除去する樹脂材料除去部と、
    　前記凹部に無電解めっき法によるめっき膜を形成して前記凹部を前記めっき膜で埋めるめっき処理部と
    　を備える、基板処理装置。     An embedding processing unit for embedding a resin material in the recesses of a substrate having recesses formed on the surface and seed layers formed on the surface and the inner surfaces of the recesses.
    A surface seed layer removing portion for removing the seed layer formed on the surface of the substrate while protecting the seed layer formed on the inner surface of the recess with the resin material.
    A resin material removing portion for removing the resin material embedded in the recess,
    A substrate processing apparatus comprising a plating processing unit for forming a plating film by an electroless plating method in the recesses and filling the recesses with the plating film.
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US6174813B1 (en) * 1998-07-22 2001-01-16 United Integrated Circuits Corp. Dual damascene manufacturing process
JP2001323381A (en) * 2000-05-16 2001-11-22 Sony Corp Plating method and plated structure
JP2004128292A (en) * 2002-10-04 2004-04-22 Renesas Technology Corp Resist embedding method and manufacture of semiconductor device
US20110156270A1 (en) * 2009-12-31 2011-06-30 Robert Seidel Contact elements of semiconductor devices formed on the basis of a partially applied activation layer
JP2016207720A (en) * 2015-04-16 2016-12-08 東京エレクトロン株式会社 Plating treatment method, storage medium and plating treatment method

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0883796A (en) * 1994-07-14 1996-03-26 Matsushita Electric Ind Co Ltd Electroless plating bath used for forming wiring of semiconductor device and wiring forming method for the same
US6174813B1 (en) * 1998-07-22 2001-01-16 United Integrated Circuits Corp. Dual damascene manufacturing process
JP2001323381A (en) * 2000-05-16 2001-11-22 Sony Corp Plating method and plated structure
JP2004128292A (en) * 2002-10-04 2004-04-22 Renesas Technology Corp Resist embedding method and manufacture of semiconductor device
US20110156270A1 (en) * 2009-12-31 2011-06-30 Robert Seidel Contact elements of semiconductor devices formed on the basis of a partially applied activation layer
JP2016207720A (en) * 2015-04-16 2016-12-08 東京エレクトロン株式会社 Plating treatment method, storage medium and plating treatment method

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