WO2019116939A1 - Substrate liquid processing apparatus - Google Patents

Substrate liquid processing apparatus Download PDF

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Publication number
WO2019116939A1
WO2019116939A1 PCT/JP2018/044359 JP2018044359W WO2019116939A1 WO 2019116939 A1 WO2019116939 A1 WO 2019116939A1 JP 2018044359 W JP2018044359 W JP 2018044359W WO 2019116939 A1 WO2019116939 A1 WO 2019116939A1
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WO
WIPO (PCT)
Prior art keywords
substrate
liquid
processing
annular wall
unit
Prior art date
Application number
PCT/JP2018/044359
Other languages
French (fr)
Japanese (ja)
Inventor
一騎 元松
金子　聡
Original Assignee
東京エレクトロン株式会社
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Filing date
Publication date
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Publication of WO2019116939A1 publication Critical patent/WO2019116939A1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Definitions

  • the present invention relates to a substrate liquid processing apparatus.
  • a substrate liquid processing apparatus for processing a substrate using a processing liquid such as a cleaning liquid for cleaning the substrate (wafer) or a plating liquid for plating the substrate (for example, Patent Document 1) See 3).
  • a processing liquid such as a cleaning liquid for cleaning the substrate (wafer) or a plating liquid for plating the substrate (for example, Patent Document 1) See 3).
  • the processing liquid needs to have a temperature suitable for liquid processing on the substrate, and in particular, to perform uniform liquid processing over the entire surface of the processing surface, the entire surface of the processing surface is processed. It is necessary for the processing solution to have a uniform temperature.
  • the treatment liquid may not always have a uniform temperature on the treatment surface, and in particular, the treatment liquid on the outer peripheral portion of the substrate is affected by the air flow etc. Temperature tends to decrease.
  • the present invention has been made in consideration of such a point, and an object of the present invention is to provide a substrate liquid processing apparatus capable of suppressing a decrease in temperature at the outer peripheral portion of a substrate.
  • One embodiment of the present invention is a substrate liquid processing apparatus that performs liquid processing of a processing surface of a substrate with a processing liquid, and a processing liquid is provided on a substrate holding unit that holds a substrate and the processing surface of a substrate held by the substrate holding unit. And a cover unit that has a processing liquid supply unit that supplies the processing solution, a heater, and is disposed at a lower position where the substrate is disposed inside and covers the processing surface, and at least a part surrounds the periphery of the substrate in plan view
  • the present invention relates to a substrate liquid processing apparatus that includes an annular wall provided, and the annular wall suppresses at least one of inflow and outflow of gas to a space around an outer peripheral portion of the substrate.
  • FIG. 1 is a schematic plan view showing the configuration of the plating apparatus.
  • FIG. 2 is a cross-sectional view showing the configuration of the plating processing unit.
  • FIG. 3 is a partially enlarged view showing a typical example of the annular wall.
  • FIG. 4 is a partially enlarged view showing a typical example of the annular wall.
  • FIG. 5 is a partially enlarged view showing a typical example of the annular wall.
  • FIG. 6 is a partially enlarged view showing a typical example of the annular wall.
  • FIG. 7 is a flowchart showing the plating process of the substrate.
  • FIG. 8 is a cross-sectional view showing a configuration of a plating processing unit according to a first modification.
  • FIG. 9 is a cross-sectional view showing a configuration of a plating processing unit according to a second modification.
  • FIG. 1 is a schematic view showing a configuration of a plating processing apparatus as an example of a substrate liquid processing apparatus according to an embodiment of the present invention.
  • the plating processing apparatus is an apparatus that supplies the plating solution L1 (processing liquid) to the processing surface Sw of the substrate W to perform plating processing (liquid processing) on the processing surface Sw of the substrate W.
  • the plating processing apparatus 1 includes a plating processing unit 2 and a control unit 3 that controls the operation of the plating processing unit 2.
  • the plating unit 2 performs various processes on the substrate W (wafer). The various processes which the plating process unit 2 performs are mentioned later.
  • the control unit 3 is, for example, a computer, and includes an operation control unit and a storage unit.
  • the operation control unit is configured of, for example, a CPU (Central Processing Unit), and controls the operation of the plating processing unit 2 by reading and executing a program stored in the storage unit.
  • the storage unit is composed of, for example, a storage device such as a random access memory (RAM), a read only memory (ROM), or a hard disk, and stores a program for controlling various processes executed in the plating processing unit 2.
  • the program may be recorded on a recording medium 31 readable by a computer, or may be installed from the recording medium 31 in a storage unit.
  • Examples of the computer readable recording medium 31 include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card.
  • a program for controlling the plating processing apparatus 1 to execute a plating processing method described later is recorded in the recording medium 31. .
  • FIG. 1 is a schematic plan view showing the configuration of the plating unit 2.
  • the plating processing unit 2 has a loading and unloading station 21 and a processing station 22 provided adjacent to the loading and unloading station 21.
  • the loading / unloading station 21 includes a placement unit 211 and a transport unit 212 provided adjacent to the placement unit 211.
  • carriers C accommodating the plurality of substrates W in a horizontal state are placed.
  • the transport unit 212 includes a transport mechanism 213 and a delivery unit 214.
  • the transport mechanism 213 includes a holding mechanism that holds the substrate W, and is configured to be able to move in the horizontal direction and the vertical direction and to pivot around the vertical axis.
  • the processing station 22 includes a plating processing unit 5.
  • the number of the plating processing units 5 included in the processing station 22 is two or more, but may be one.
  • the plating processing units 5 are arranged on both sides of the transport path 221 extending in a predetermined direction (both sides in the direction orthogonal to the moving direction of the transport mechanism 222 described later).
  • the transport mechanism 222 includes a holding mechanism that holds the substrate W, and is configured to be able to move in the horizontal direction and the vertical direction and to pivot around the vertical axis.
  • the transport mechanism 213 of the loading / unloading station 21 transports the substrate W between the carrier C and the delivery unit 214. Specifically, the transport mechanism 213 takes out the substrate W from the carrier C placed on the placement unit 211 and places the taken-out substrate W on the delivery unit 214. Further, the transport mechanism 213 takes out the substrate W placed on the delivery unit 214 by the transport mechanism 222 of the processing station 22, and stores the substrate W in the carrier C of the placement unit 211.
  • the transport mechanism 222 of the processing station 22 transports the substrate W between the delivery unit 214 and the plating unit 5 and between the plating unit 5 and the delivery unit 214. Specifically, the transport mechanism 222 takes out the substrate W placed on the delivery unit 214 and carries the taken-out substrate W into the plating processing unit 5. Further, the transport mechanism 222 takes out the substrate W from the plating processing unit 5 and places the taken-out substrate W on the delivery unit 214.
  • FIG. 2 is a schematic cross-sectional view showing the configuration of the plating processing unit 5.
  • the plating processing unit 5 performs a liquid process including an electroless plating process.
  • the plating processing unit 5 is disposed on the chamber 51, the substrate holding unit 52 disposed in the chamber 51 and holding the substrate W horizontally, and plating on the upper surface (processing surface Sw) of the substrate W held by the substrate holding unit 52.
  • a plating solution supply unit 53 (treatment solution supply unit) for supplying the solution L1 (treatment solution).
  • the substrate holding unit 52 has a chuck member 521 that vacuum-sucks the lower surface (rear surface) of the substrate W.
  • the substrate holding unit 52 is a so-called vacuum chuck type, but the substrate holding unit 52 is not limited to this, and may be, for example, a mechanical chuck type that holds the outer edge portion of the substrate W by a chuck mechanism or the like.
  • a rotation motor 523 (rotation drive unit) is connected to the substrate holding unit 52 via a rotation shaft 522. When the rotation motor 523 is driven, the substrate holding unit 52 rotates with the substrate W.
  • the rotary motor 523 is supported by a base 524 fixed to the chamber 51.
  • the plating solution supply unit 53 discharges (supplys) the plating solution L1 to the substrate W held by the substrate holding unit 52 (plating solution nozzle 531 (processing solution nozzle)) and plating that supplies the plating solution L1 to the plating solution nozzle 531 And a liquid supply source 532.
  • the plating solution supply source 532 supplies the plating solution nozzle 531 with the plating solution L1 that has been heated or adjusted to a predetermined temperature.
  • the temperature of the plating solution L1 when discharged from the plating solution nozzle 531 is a temperature higher than the ambient temperature around the substrate W, for example, 55 ° C. or more and 75 ° C. or less, more preferably 60 ° C. or more and 70 ° C. or less It is.
  • the plating solution nozzle 531 is held by the nozzle arm 56 so as to be movable.
  • the plating solution L1 is a plating solution for autocatalytic (reduction) electroless plating.
  • the plating solution L1 includes, for example, metal ions such as cobalt (Co) ion, nickel (Ni) ion, tungsten (W) ion, copper (Cu) ion, palladium (Pd) ion, gold (Au) ion, and the like. It contains a reducing agent such as phosphoric acid and dimethylamine borane.
  • the plating solution L1 may contain an additive and the like.
  • Examples of the plating film (metal film) formed by the plating treatment using the plating solution L1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP and the like.
  • the plating processing unit 5 As another processing liquid supply unit, the plating processing unit 5 according to the present embodiment rinses the upper surface of the substrate W with the cleaning liquid supply unit 54 that supplies the cleaning liquid L2 to the upper surface of the substrate W held by the substrate holding unit 52. And a rinse liquid supply unit 55 for supplying the liquid L3.
  • the cleaning solution supply unit 54 has a cleaning solution nozzle 541 for discharging the cleaning solution L2 onto the substrate W held by the substrate holding unit 52, and a cleaning solution supply source 542 for supplying the cleaning solution L2 to the cleaning solution nozzle 541.
  • the cleaning liquid L2 include organic acids such as formic acid, malic acid, succinic acid, citric acid and malonic acid, and hydrofluoric acid (DHF) diluted to a concentration that does not corrode the surface to be plated of the substrate W.
  • An aqueous solution of hydrogen chloride or the like can be used.
  • the cleaning solution nozzle 541 is held by the nozzle arm 56 so as to be movable together with the plating solution nozzle 531.
  • the rinse liquid supply unit 55 has a rinse liquid nozzle 551 that discharges the rinse liquid L3 onto the substrate W held by the substrate holding unit 52, and a rinse liquid supply source 552 that supplies the rinse liquid L3 to the rinse liquid nozzle 551.
  • the rinse solution nozzle 551 is held by the nozzle arm 56 and is movable together with the plating solution nozzle 531 and the cleaning solution nozzle 541.
  • pure water can be used as the rinse liquid L3.
  • a nozzle moving mechanism (not shown) is connected to the nozzle arm 56 holding the plating solution nozzle 531, the cleaning solution nozzle 541, and the rinse solution nozzle 551 described above.
  • the nozzle moving mechanism moves the nozzle arm 56 horizontally and vertically. More specifically, between the discharge position at which the nozzle arm 56 discharges the processing liquid (plating solution L1, cleaning liquid L2 or rinse liquid L3) onto the substrate W by the nozzle moving mechanism, and the retracted position retracted from the discharge position. It is possible to move with.
  • the ejection position is not particularly limited as long as the processing liquid can be supplied to any position on the upper surface of the substrate W. For example, it is preferable to set a position where the processing liquid can be supplied to the center of the substrate W as a discharge position.
  • the discharge position of the nozzle arm 56 may be different depending on when the rinse liquid L3 is supplied.
  • the retracted position is a position in the chamber 51 which does not overlap the substrate W when viewed from above, and is a position separated from the discharge position.
  • a liquid receiving cup 571 is provided around the substrate holding portion 52 and the substrate W.
  • the liquid receiving cup 571 is formed in an annular shape when viewed from above, and receives the processing liquid scattered from the substrate W when the substrate W rotates, and guides the processing liquid to a drain duct 581 described later.
  • An atmosphere blocking cover 572 is provided on the outer peripheral side of the liquid receiving cup 571 to suppress the diffusion of the atmosphere around the substrate W into the chamber 51.
  • the atmosphere blocking cover 572 is formed in a cylindrical shape so as to extend in the vertical direction, and the upper end is open. A lid 6 described later can be inserted into the atmosphere blocking cover 572 from above.
  • the substrate W held by the substrate holding unit 52 is covered by the lid 6.
  • the lid 6 has a ceiling 61 and a side wall 62 extending downward from the ceiling 61.
  • the ceiling portion 61 is disposed above the substrate W held by the substrate holding portion 52 when the lid 6 is positioned at a lower position described later, and faces the substrate W at a relatively small distance.
  • the ceiling portion 61 includes a first ceiling plate 611 and a second ceiling plate 612 provided on the first ceiling plate 611.
  • a heater 63 (heating unit) is interposed between the first ceiling plate 611 and the second ceiling plate 612.
  • the first ceiling plate 611 and the second ceiling plate 612 seal the heater 63 so that the heater 63 does not touch the processing solution such as the plating solution L1.
  • a seal ring 613 is provided between the first ceiling plate 611 and the second ceiling plate 612 on the outer peripheral side of the heater 63, and the heater 63 is sealed by the seal ring 613.
  • the first ceiling plate 611 and the second ceiling plate 612 preferably have corrosion resistance to a processing solution such as the plating solution L1, and may be made of, for example, an aluminum alloy.
  • the first ceiling plate 611, the second ceiling plate 612 and the side wall portion 62 may be coated with Teflon (registered trademark).
  • a lid moving mechanism 7 is connected to the lid 6 via a lid arm 71.
  • the lid moving mechanism 7 moves the lid 6 horizontally and vertically. More specifically, the lid moving mechanism 7 has a swing motor 72 for moving the lid 6 in the horizontal direction, and a cylinder 73 (space adjustment unit) for moving the lid 6 in the vertical direction.
  • the swing motor 72 is mounted on a support plate 74 provided so as to be movable in the vertical direction with respect to the cylinder 73.
  • an actuator (not shown) including a motor and a ball screw may be used.
  • the swing motor 72 of the lid moving mechanism 7 moves the lid 6 between an upper position disposed above the substrate W held by the substrate holding unit 52 and a retracted position retracted from the upper position.
  • the upper position is a position facing the substrate W held by the substrate holding unit 52 at a relatively large distance, and is a position overlapping the substrate W when viewed from above.
  • the retracted position is a position in the chamber 51 which does not overlap the substrate W when viewed from above.
  • the cylinder 73 of the lid moving mechanism 7 moves the lid 6 in the vertical direction to adjust the distance between the substrate W on which the plating solution L1 is deposited on the processing surface Sw and the first ceiling plate 611 of the ceiling portion 61. Do. More specifically, the cylinder 73 positions the lid 6 at a lower position (indicated by a solid line in FIG. 2) and at an upper position (indicated by a two-dot chain line in FIG. 2).
  • the first ceiling plate 611 When the lid 6 is disposed at the lower position, the first ceiling plate 611 approaches the substrate W. In this case, it is preferable to set the lower position so that the first ceiling plate 611 does not touch the plating solution L1 on the substrate W in order to prevent the contamination of the plating solution L1 and the generation of air bubbles in the plating solution L1. is there.
  • the upper position is at a height that can prevent the lid 6 from interfering with surrounding structures such as the liquid receiving cup 571 and the atmosphere blocking cover 572 when the lid 6 is moved in a horizontal direction. ing.
  • the heater 63 when the heater 63 is driven and the lid 6 is positioned at the above-described lower position, the plating solution L1 on the substrate W is heated.
  • the side wall portion 62 of the lid 6 extends downward from the peripheral portion of the first ceiling plate 611 of the ceiling portion 61, and when heating the plating solution L1 on the substrate W (ie, the lid 6 is positioned at the lower position) Case) is disposed on the outer peripheral side of the substrate W.
  • the lower end of the side wall portion 62 may be positioned lower than the substrate W.
  • a heater 63 is provided on the ceiling portion 61 of the lid 6.
  • the heater 63 heats the processing solution (preferably, the plating solution L1) on the substrate W when the lid 6 is positioned at the lower position.
  • the heater 63 is interposed between the first ceiling plate 611 and the second ceiling plate 612 of the lid 6, and is sealed as described above, and the heater 63 is treated with the plating solution L1 or the like. It is prevented from touching the liquid.
  • the heater 63 is not particularly limited. For example, a mica heater which is a planar heating element can be suitably used.
  • an inert gas for example, nitrogen (N 2 ) gas
  • the inert gas supply unit 66 includes a gas nozzle 661 that discharges an inert gas to the inside of the lid 6 and an inert gas supply source 662 that supplies the gas nozzle 661 with the inert gas.
  • the gas nozzle 661 is provided on the ceiling portion 61 of the lid 6 and discharges the inert gas toward the substrate W in a state where the lid 6 covers the substrate W.
  • the ceiling portion 61 and the side wall portion 62 of the lid 6 are covered by a lid cover 64.
  • the lid cover 64 is placed on the second ceiling plate 612 of the lid 6 via the support portion 65. That is, on the second ceiling plate 612, a plurality of support portions 65 projecting upward from the upper surface of the second ceiling plate 612 are provided, and the lid cover 64 is placed on the support portions 65.
  • the lid cover 64 is movable together with the lid 6 in the horizontal and vertical directions.
  • the lid cover 64 preferably has higher heat insulation than the ceiling portion 61 and the side wall portion 62 in order to suppress heat in the lid 6 from escaping to the periphery.
  • the lid cover 64 is preferably made of a resin material, and it is more preferable that the resin material has heat resistance.
  • the lid 6 having the heater 63 and the lid cover 64 are integrally provided, and the substrate W is disposed inside when covering the processing surface Sw when disposed at the lower position.
  • the cover unit 10 is constituted by the lid 6 and the lid cover 64.
  • a fan filter unit 59 (gas supply unit) for supplying clean air (gas) around the lid 6 is provided.
  • the fan filter unit 59 supplies air into the chamber 51 (particularly, into the atmosphere blocking cover 572), and the supplied air flows toward an exhaust pipe 81 described later.
  • a downflow in which the air flows downward is formed around the lid 6, and a gas vaporized from the processing solution such as the plating solution L1 flows toward the exhaust pipe 81 by the downflow.
  • the gas vaporized from the processing liquid is prevented from rising and diffusing into the chamber 51.
  • the gas supplied from the fan filter unit 59 described above is exhausted by the exhaust mechanism 8.
  • the exhaust mechanism 8 has two exhaust pipes 81 provided below the liquid receiving cup 571 and an exhaust duct 82 provided below the drain duct 581.
  • the two exhaust pipes 81 penetrate the bottom of the drain duct 581 and communicate with the exhaust duct 82, respectively.
  • the exhaust duct 82 is substantially formed in a semicircular ring shape when viewed from above. In the present embodiment, one exhaust duct 82 is provided below the drain duct 581, and two exhaust pipes 81 communicate with the exhaust duct 82.
  • the plating processing unit 5 of the plating processing apparatus 1 having the above-described configuration further includes an annular wall 40.
  • the annular wall 40 is provided so as to surround at least a part of the outer periphery of the disk-like substrate W in plan view from above, and the inflow and the outflow of the gas to the space around the outer periphery of the substrate W Suppress at least one of them.
  • the annular wall 40 shown in FIG. 2 is provided at a position corresponding to the gas flow space 42 formed below the cover unit 10 (i.e., the lid 6 and the lid cover 64) disposed at the lower position, It restricts the flow of gas between the inside and the outside of the cover unit 10 through 42.
  • the side wall portion of the cover unit 10 disposed at a position surrounding the substrate W (that is, the portion covering the side wall portion 62 of the side wall portion 62 of the lid 6 and the lid cover 64)
  • a gas flow space 42 is constituted by the space between the and the guide member 583 provided above the exhaust pipe 81.
  • the guide member 583 is an annular member provided below the substrate W, and prevents the processing solution such as the plating solution L1 falling above the exhaust pipe 81 from entering the exhaust pipe 81 while draining the processing liquid from the substrate W. Guide to 581.
  • the annular wall 40 shown in FIG. 2 is provided on the inside of the liquid receiving cup 571, and in particular, on the inside of the cover unit 10 disposed at the lower position, at a position facing the gas flow space 42 in the horizontal direction. More specifically, the annular wall 40 is provided below the substrate W, extends upward from the guide member 583, faces the gas flow space 42 in the horizontal direction, and is of the side wall portion of the cover unit 10 It also faces a part (that is, the lower end portion of the side wall portion 62 etc.).
  • the annular wall 40 has a uniform thickness over the entire circumference, and in plan view from above, a portion of the annular wall 40 (that is, the inner peripheral portion of the annular wall 40) overlaps the outer periphery of the substrate W
  • the other portion 40 i.e., the outer peripheral portion of the annular wall 40
  • the annular wall 40 shown in FIG. 2 is disposed not only in the space outside the outer periphery of the substrate W, but also in the space at the lower position of the outer periphery of the substrate W, and is provided to occupy a relatively wide range.
  • the size of the space through which the gas can flow is reduced.
  • this annular wall 40 is not limited. Although the annular wall 40 shown in FIG. 2 is fixed to the guide member 583, the specific fixing method to the guide member 583 is not limited. For example, a fixing member (not shown) provided so as to penetrate the guide member 583 The annular wall 40 can be fixed to the guiding member 583 via Further, the annular wall 40 may be fixed to other members provided around the periphery via a fixing tool or the like (not shown).
  • the annular wall 40 having the above-described shape and arrangement can suppress local temperature decrease at the outer peripheral portion of the substrate W. That is, by providing the annular wall 40 in the vicinity of the outer peripheral portion of the substrate W in the space surrounded by the cover unit 10, the space around the outer peripheral portion of the substrate W can be brought close to the sealed space. Thereby, the inflow and outflow of air to and from the space around the outer peripheral portion of the substrate W can be suppressed, and the temperature decrease of the outer peripheral portion of the substrate W that can be brought about by such air flow can be suppressed. Further, the ambient temperature around the outer periphery of the substrate W can be raised to suppress the heat radiation from the outer periphery of the substrate W.
  • the periphery of the outer periphery of the substrate W by bringing the periphery of the outer periphery of the substrate W closer to the sealed space, it is difficult for steam to escape from the periphery of the outer periphery of the substrate W, and the periphery of the outer periphery of the substrate W can be maintained in a saturated state. It is possible to reduce the vaporization of the plating solution L1 deposited on the outer peripheral portion of the substrate W. Therefore, the temperature decrease of the outer peripheral portion of the substrate W due to the heat of vaporization of the plating solution L1 can be prevented, and the temperature decrease of the outer peripheral portion of the substrate W can be suppressed more effectively.
  • annular wall 40 of FIG. 2 is merely an example, and the annular wall 40 may have other shapes and arrangements.
  • FIGS. 3 to 6 are partially enlarged views showing a typical example of the annular wall 40.
  • the side wall portion of the cover unit 10 ie, the side wall portion 62 of the lid 6 and the portion of the lid cover 64 that covers the side wall portion 62
  • the right side of the side wall portion of the illustrated cover unit 10 corresponds to the inner side of the cover unit 10 (that is, the side on which the substrate W (not shown) is disposed). (Ie, the side on which the liquid receiving cup 571 (not shown) is disposed).
  • the annular wall 40 is, as shown in FIG. 3, inside the cover unit 10 disposed at the lower position, the side wall portion of the cover unit 10 in the horizontal direction (i.e., the side wall portion 62 of the lid 6 and the lid cover 64). It may be disposed between the substrate W and a portion covering the side wall portion 62. That is, the annular wall 40 may not overlap the outer peripheral portion of the substrate W in plan view from above, and may not be located immediately below the outer peripheral portion of the substrate W. However, even in such a case, the annular wall 40 is provided to surround the outer peripheral portion of the substrate W in plan view from above. Further, the annular wall 40 shown in FIG. 3 is provided at a position corresponding to the gas flow space 42 (that is, a position facing the gas flow space 42 in the horizontal direction), and the inside and the outside of the cover unit 10 via the gas flow space 42. Control the flow of gas between
  • the annular wall 40 may also be disposed outside the cover unit 10 disposed at the lower position, as shown in FIG. That is, the annular wall 40 is disposed between the side wall portion of the cover unit 10 (that is, the portion covering the side wall portion 62 of the side wall portion 62 of the lid 6 and the lid cover 64) in the horizontal direction It is also good. However, even in such a case, the annular wall 40 is provided at a position corresponding to the gas flow space 42 so as to surround the outer peripheral portion of the substrate W in plan view from above, Control the flow of the
  • the annular wall 40 may also be arranged to at least partially block the gas flow space 42.
  • the recess 11 is provided in the side wall portion of the cover unit 10 (that is, the portion covering the side wall portion 62 of the side wall portion 62 of the lid 6 and the lid cover 64) and disposed at the lower position A part of the annular wall 40 (i.e., the tip 40a) is disposed inside the recess 11 of the cover unit 10 that has been set.
  • the gas flow space 42 formed under the side wall portion of the cover unit 10 is closed by the annular wall 40, and the flow of gas between the inside and the outside of the cover unit 10 via the gas flow space 42 is achieved. It can be shut off almost completely.
  • the recessed part 11 provided in the side wall part of the cover unit 10 can be formed in various aspects.
  • the recess 11 may be provided at a position slightly out of the vertically extending position of the side wall portion of the cover unit 10. That is, the concave portion 11 shown in FIG. 6 is surrounded by the vertically extending wall portion 10a extending in the vertical direction and the branch wall portion 10b branched from the vertically extending wall portion 10a in the side wall portion of the cover unit 10. It is formed by space.
  • the branch wall portion 10b may be provided integrally with the vertically extending wall portion 10a without having a connection surface to the vertically extending wall portion 10a, or may be added to the vertically extending wall portion 10a from the outside. It may be attached to
  • Annular wall 40 is not limited to the exemplary embodiment shown in FIGS. 2-6 and may have other shapes and / or other arrangements.
  • the annular wall 40 may be in contact with the cover unit 10 (for example, the side wall portion) disposed at the lower position.
  • the annular wall 40 may at least partially overlap the cover unit 10 (in particular, the side wall portion) or may not overlap the cover unit 10.
  • the shape and arrangement of the annular wall 40 be uniform with respect to the entire outer peripheral portion of the substrate W, For example, a notch or the like may be provided in a part of the annular wall 40.
  • the plating method implemented by the plating apparatus 1 includes a plating process on the substrate W.
  • the plating process is performed by the plating unit 5.
  • the operation of the plating processing unit 5 described below is controlled by the control unit 3. During the following processing, clean air is supplied from the fan filter unit 59 into the chamber 51 and flows toward the exhaust pipe 81.
  • the substrate W is carried into the plating processing unit 5, and the substrate W is held horizontally by the substrate holding unit 52 (step S1).
  • step S2 cleaning processing of the substrate W held by the substrate holding unit 52 is performed (step S2).
  • the rotary motor 523 is first driven to rotate the substrate W at a predetermined number of rotations, and then the nozzle arm 56 positioned at the retracted position is moved to the discharge position, and the rotating substrate W is cleaned
  • the cleaning liquid L2 is supplied from the nozzle 541 to clean the surface of the substrate W.
  • the cleaning liquid L2 supplied to the substrate W is discharged to the drain duct 581.
  • a rinse process is performed on the substrate W (step S3).
  • the rinse solution L3 is supplied from the rinse solution nozzle 551 to the rotating substrate W to rinse the surface of the substrate W.
  • the cleaning liquid L2 remaining on the substrate W is washed away.
  • the rinse liquid L3 supplied to the substrate W is discharged to the drain duct 581.
  • a plating solution application step of forming a paddle of the plating solution L1 on the processing surface Sw of the substrate W is performed (step S4).
  • the number of rotations of the substrate W is reduced compared to the number of rotations at the time of the rinse process, and for example, the number of rotations of the substrate W may be 50 to 150 rpm. Thereby, the plating film formed on the substrate W can be made uniform.
  • the amount of deposition of the plating solution L1 may be increased by stopping the rotation of the substrate W.
  • the plating solution L1 is discharged from the plating solution nozzle 531 to the upper surface (that is, the processing surface Sw) of the substrate W.
  • the plating solution L1 remains on the treated surface Sw due to surface tension, and a layer (so-called paddle) of the plating solution L1 is formed. A portion of the plating solution L1 flows out of the processing surface Sw and is discharged through the drain duct 581. After the predetermined amount of plating solution L1 is discharged from the plating solution nozzle 531, the discharge of the plating solution L1 is stopped. Thereafter, the nozzle arm 56 is positioned at the retracted position.
  • a plating solution heat treatment step the plating solution L1 deposited on the substrate W is heated.
  • a process of covering the substrate W with the cover 6 step S5), a process of supplying an inert gas (step S6), and the process of arranging the cover 6 at a lower position
  • a heating step (step S7) of heating and a step (step S8) of retracting the lid 6 from above the substrate W are included.
  • the number of rotations of the substrate W is preferably maintained at the same speed (or the rotation stop) as the plating solution deposition step.
  • step S5 In the step of covering the substrate W with the lid 6 (step S5), first, the swing motor 72 of the lid moving mechanism 7 is driven to horizontally move the lid 6 positioned at the retracted position in the horizontal direction. It is located at the upper position. Subsequently, the cylinder 73 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position is lowered and positioned at the lower position, and the substrate W is covered by the lid 6 and the periphery of the substrate W Space is blocked.
  • an inert gas is discharged from the gas nozzle 661 provided on the ceiling 61 of the lid 6 to the inside of the lid 6 (step S6).
  • the air inside the lid 6 is replaced with the inert gas, and the periphery of the substrate W becomes a low oxygen atmosphere.
  • the inert gas is discharged for a predetermined time, and then the discharge of the inert gas is stopped.
  • the plating solution L1 deposited on the substrate W is heated (step S7).
  • the temperature of the plating solution L1 rises to a temperature at which the component in the plating solution L1 precipitates, the component of the plating solution L1 precipitates on the upper surface of the substrate W to form and grow a plating film.
  • the plating solution L1 is heated and maintained at the deposition temperature for a time necessary to obtain a plating film having a desired thickness.
  • the lid moving mechanism 7 is driven to position the lid 6 at the retracted position (step S8).
  • the plating solution heat treatment process steps S5 to S8 of the substrate W is completed.
  • the substrate W is rinsed (step S9).
  • this rinse process first, the number of rotations of the substrate W is increased more than the number of rotations during the plating process, and the substrate W is rotated at the same number of rotations as the substrate rinsing process (step S3) before the plating process, for example.
  • the rinse liquid nozzle 551 positioned at the retracted position is moved to the discharge position.
  • the rinse solution L3 is supplied from the rinse solution nozzle 551 to the rotating substrate W, the surface of the substrate W is cleaned, and the plating solution L1 remaining on the substrate W is washed away.
  • the substrate W is dried (step S10).
  • the substrate W is rotated at a high speed, and, for example, the number of rotations of the substrate W is increased more than the number of rotations of the substrate rinsing process (step S9).
  • the rinse liquid L3 remaining on the substrate W is shaken off and removed, and the substrate W on which the plating film is formed is obtained.
  • drying of the substrate W may be promoted by blowing an inert gas such as nitrogen (N 2 ) gas onto the substrate W.
  • the substrate W is taken out of the substrate holding unit 52 and carried out of the plating processing unit 5 (step S11).
  • the annular wall 40 suppresses the flow of gas between the inside and the outside of the cover unit 10 via the gas flow space 42, and the space around the outer peripheral portion of the substrate W Inflow and / or outflow of gas to / from can be suppressed.
  • the space around the outer peripheral portion of the substrate W closer to the sealed space in this manner, it is possible to effectively suppress the local temperature drop of the outer peripheral portion of the substrate W.
  • FIG. 8 is a cross-sectional view showing a configuration of a plating processing unit 5 according to a first modification.
  • the plating processing unit 5 of this modification further includes an annular additional heating unit 44 in place of the annular wall 40 shown in FIG. 2.
  • the additional heating unit 44 is provided below the first ceiling plate 611 of the lid 6, and in particular, is disposed near the outer peripheral portion of the substrate W.
  • the additional heating unit 44 is a member that further transmits and radiates the heat emitted from the heater 63 and transmitted by the first ceiling plate 611. Therefore, the additional heating unit 44 is made of a material that is excellent in heat conductivity and heat dissipation, and exhibits excellent corrosion resistance to the processing solution such as the plating solution L1, and is typically made of the same material as the first ceiling plate 611. Configured Therefore, the additional heating unit 44 may be provided integrally with the first ceiling plate 611, or may be provided separately from the first ceiling plate 611.
  • the additional heating unit 44 is a part provided to narrow the gap (distance) between the lid 6 (in particular, the first ceiling plate 611) and the substrate W (in particular, the processing surface Sw), and functionally it is a lid Work as part of body 6 That is, heat from the heater 63 is radiated at a position closer to the substrate W (in particular, the processing surface Sw) by the additional heating unit 44, and it is possible to prevent a local temperature drop at the outer peripheral portion of the substrate W.
  • the additional heating unit 44 can be installed in a mode that can efficiently transfer the heat from the heater 63 to the outer peripheral portion of the substrate W, and is not limited to the installation mode shown in FIG.
  • at least a portion of the additional heating unit 44 may be located above the outer peripheral portion of the substrate W.
  • the additional heating unit 44 may be provided so as to be disposed closer to the processing surface Sw as the outer periphery of the substrate W is.
  • the surface facing the processing surface Sw of the substrate W is inclined in at least a part of the additional heating unit 44, and the distance between the inclined surface and the processing surface Sw is reduced toward the outer periphery of the substrate W. It is also good.
  • the above-mentioned additional heating unit 44 plays a role of suppressing the inflow and / or the outflow of the gas to the space around the outer peripheral portion of the substrate W, so it is also used as a kind of annular wall (see reference numeral 40 in FIG. 2). work.
  • FIG. 9 is a cross-sectional view showing a configuration of a plating processing unit 5 according to a second modification.
  • the plating processing unit 5 of this modification further includes an annular water storage unit 46 instead of the annular wall 40 shown in FIG. 2.
  • the water reservoir 46 is disposed below the outer peripheral portion of the substrate W inside the cover unit 10 disposed at the lower position, and is fixed to the guide member 583.
  • the water reservoir 46 has a groove 48, and hot water (for example, heated DIW) having a temperature higher than the ambient temperature around the substrate W is stored in the groove 48.
  • the water reservoir 46 is a mechanism for assisting the heating of the substrate W by the heat radiated from the warm water in the groove 48 and the steam of the warm water, and in particular, the treated surface Sw of the substrate W and the plating on the treated surface Sw Before the liquid L1 is heated by the heat of the heater 63, the substrate W is heated.
  • the temperature of the plating solution L1 on the processing surface Sw is mainly based on the temperature adjustment of the plating solution L1 in the plating solution supply source 532 and the heating by the heat generated by the heater 63. Therefore, the temperature of the plating solution L1 gradually decreases until the heating by the cover unit 10 (that is, the heater 63) is started after being supplied onto the processing surface Sw. Such a temperature drop of the plating solution L1 is preferably prevented as much as possible because it may adversely affect the reaction of the plating process (in particular, the initial reaction).
  • hot water is stored in the groove portion 48 of the water storage unit 46 before the plating solution L1 is supplied to the processing surface Sw in order to suppress such temperature decrease of the plating solution L1.
  • the substrate W is heated using the hot water as a heat source.
  • a heating element such as a heater
  • the back surface of the substrate W may be exposed to the chemical solution and the pure water for the wraparound of the plating solution L1 from the processing surface Sw, the rinse process after the plating process, and the like, and the installation of such a heating element may not be preferable.
  • the substrate W can not always be efficiently heated.
  • the water storage unit 46 of this modification is relatively easy to install. Further, since steam is present between the hot water in the groove portion 48 and the substrate W, the substrate W can be efficiently heated. Further, even if the back surface of the substrate W is exposed to the chemical solution and the pure water, no particular problem occurs in the present modification using hot water as a heat source. Further, if heating of the substrate W is necessary, hot water is stored in the groove 48, and if heating of the substrate W is unnecessary (for example, at the time of drying processing of the substrate W), the hot water may be discharged from the groove 48. Temperature control can be easily performed.
  • the warm water supplied to the groove portion 48 for example, it is possible to use warm water used in a heat exchanger (not shown) for warming the plating solution L1 in advance, or warm water used in other processes, It is possible to easily introduce the water storage section 46 to the plating processing section 5.
  • the method of supplying hot water to the groove 48 and the method of discharging hot water from the groove 48 are not limited.
  • a pipe for supplying hot water is provided on a side wall portion on the inner peripheral side of the water storage portion 46, and before the plating solution L1 is supplied from the plating solution nozzle 531 to the processing surface Sw, the groove 48 is located via the pipe. It can supply a fixed amount of hot water.
  • a pipe for hot water discharge is provided on the bottom of the groove 48, and the cover unit 10 is disposed at the lower position, and the heat from the heater 63 stabilizes the temperature of the substrate W. It can be discharged.
  • the above-mentioned water storage part 46 is not limited to the installation mode shown in FIG.
  • the water reservoir 46 (in particular, the groove 48) shown in FIG. 9 is provided at a position facing the outer periphery of the substrate W, but from the viewpoint of efficiently heating the entire substrate W using warm water, the back surface of the substrate W
  • a groove 48 is provided in the area facing the wider part of the groove.
  • the above-described water reservoir 46 plays a role of suppressing the inflow and / or outflow of gas into the space around the outer peripheral portion of the substrate W, so it is also used as a kind of annular wall (see symbol “40” in FIG. 2). work.
  • the present invention is not limited to the above embodiment and modification as it is, and at the implementation stage, the constituent elements can be modified and embodied without departing from the scope of the invention. Further, various inventions can be formed by appropriate combinations of a plurality of constituent elements disclosed in the above-described embodiment and modification. Some components may be deleted from all the components shown in the embodiment and the modification. Furthermore, components in different embodiments and variations may be combined as appropriate.
  • the substrate liquid processing apparatus and the substrate liquid processing method according to the present invention are effective for processing liquids other than the plating liquid L1 and liquid processing other than the plating processing.
  • a program that when executed by a computer for controlling the operation of the substrate liquid processing apparatus (plating processing apparatus 1), the computer controls the substrate liquid processing apparatus to execute the above-described substrate liquid processing method.
  • the present invention may be embodied as a recorded recording medium (for example, the recording medium 31 of the control unit 3).

Abstract

[Problem] To provide a substrate liquid processing apparatus, which is capable of suppressing temperature decrease in the outer peripheral portion of a substrate. [Solution] A substrate liquid processing apparatus 5, which performs a liquid processing of a processing surface Sw of a substrate W by means of a processing liquid L1, is provided with: a substrate holding part 52 that holds the substrate W; a processing liquid supply part 53 that supplies the processing liquid L1 to the processing surface Sw of the substrate W, which is held by the substrate holding part 52; a cover unit 10 that comprises a heater 63 and is able to be arranged at a lower position at which the substrate W is arranged inside the cover unit and the processing surface Sw is covered thereby; and an annular wall 40 that is provided so that at least a part thereof surrounds the outer peripheral portion of the substrate W when viewed in plan. The annular wall 40 suppresses at least one of inflow and outflow of a gas into/from the space around the outer peripheral portion of the substrate W.

Description

基板液処理装置Substrate liquid processing system
　本発明は、基板液処理装置に関する。 The present invention relates to a substrate liquid processing apparatus.
　一般に、基板（ウエハ）を洗浄処理するための洗浄液や、基板をめっき処理するためのめっき液等の処理液を用いて基板を液処理する基板液処理装置が知られている（例えば特許文献１～３参照）。そのような液処理を適切に行うには、基板上において処理液が液処理に適した温度を有する必要があり、特に処理面の全面にわたって均一な液処理を行うには、処理面の全面にわたって処理液が均一な温度を有する必要がある。 Generally, there is known a substrate liquid processing apparatus for processing a substrate using a processing liquid such as a cleaning liquid for cleaning the substrate (wafer) or a plating liquid for plating the substrate (for example, Patent Document 1) See 3). In order to properly perform such liquid processing, the processing liquid needs to have a temperature suitable for liquid processing on the substrate, and in particular, to perform uniform liquid processing over the entire surface of the processing surface, the entire surface of the processing surface is processed. It is necessary for the processing solution to have a uniform temperature.
　しかしながら様々な要因で、処理液は処理面上において必ずしも均一な温度を有していないことがあり、特に基板の外周部の処理液は、気流等の影響を受け、中央部の処理液に比べて温度が低下し易い傾向がある。 However, due to various factors, the treatment liquid may not always have a uniform temperature on the treatment surface, and in particular, the treatment liquid on the outer peripheral portion of the substrate is affected by the air flow etc. Temperature tends to decrease.
特開平９－１７７６１号公報JP-A-9-17761 特開２００４－１０７７４７号公報JP 2004-107747 A 特開２０１２－１３６７８３号公報Unexamined-Japanese-Patent No. 2012-136783
　本発明は、このような点を考慮してなされたものであり、基板の外周部における温度の低下を抑制することができる基板液処理装置を提供することを目的とする。 The present invention has been made in consideration of such a point, and an object of the present invention is to provide a substrate liquid processing apparatus capable of suppressing a decrease in temperature at the outer peripheral portion of a substrate.
　本発明の一態様は、処理液によって基板の処理面の液処理を行う基板液処理装置であって、基板を保持する基板保持部と、基板保持部により保持された基板の処理面に処理液を供給する処理液供給部と、ヒータを具備し、基板を内側に配置し且つ処理面を覆う下方位置に配置可能なカバーユニットと、平面視において少なくとも一部が基板の外周部を取り囲むように設けられる環状壁と、を備え、環状壁は、基板の外周部の周囲の空間に対する気体の流入及び流出のうち少なくともいずれかを抑制する基板液処理装置に関する。 One embodiment of the present invention is a substrate liquid processing apparatus that performs liquid processing of a processing surface of a substrate with a processing liquid, and a processing liquid is provided on a substrate holding unit that holds a substrate and the processing surface of a substrate held by the substrate holding unit. And a cover unit that has a processing liquid supply unit that supplies the processing solution, a heater, and is disposed at a lower position where the substrate is disposed inside and covers the processing surface, and at least a part surrounds the periphery of the substrate in plan view The present invention relates to a substrate liquid processing apparatus that includes an annular wall provided, and the annular wall suppresses at least one of inflow and outflow of gas to a space around an outer peripheral portion of the substrate.
　本発明によれば、基板の外周部における温度の低下を抑制することができる。 According to the present invention, it is possible to suppress a decrease in temperature at the outer peripheral portion of the substrate.
図１は、めっき処理装置の構成を示す概略平面図である。FIG. 1 is a schematic plan view showing the configuration of the plating apparatus. 図２は、めっき処理部の構成を示す断面図である。FIG. 2 is a cross-sectional view showing the configuration of the plating processing unit. 図３は、環状壁の典型例を示す部分拡大図である。FIG. 3 is a partially enlarged view showing a typical example of the annular wall. 図４は、環状壁の典型例を示す部分拡大図である。FIG. 4 is a partially enlarged view showing a typical example of the annular wall. 図５は、環状壁の典型例を示す部分拡大図である。FIG. 5 is a partially enlarged view showing a typical example of the annular wall. 図６は、環状壁の典型例を示す部分拡大図である。FIG. 6 is a partially enlarged view showing a typical example of the annular wall. 図７は、基板のめっき処理を示すフローチャートである。FIG. 7 is a flowchart showing the plating process of the substrate. 図８は、第１の変形例に係るめっき処理部の構成を示す断面図である。FIG. 8 is a cross-sectional view showing a configuration of a plating processing unit according to a first modification. 図９は、第２の変形例に係るめっき処理部の構成を示す断面図である。FIG. 9 is a cross-sectional view showing a configuration of a plating processing unit according to a second modification.
　以下、図面を参照して本発明の一の実施の形態について説明する。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings.
　まず、図１を参照して、本発明の実施の形態に係る基板液処理装置の構成を説明する。図１は、本発明の実施の形態に係る基板液処理装置の一例としてのめっき処理装置の構成を示す概略図である。ここで、めっき処理装置は、基板Ｗの処理面Ｓｗにめっき液Ｌ１（処理液）を供給して基板Ｗの処理面Ｓｗをめっき処理（液処理）する装置である。 First, the configuration of a substrate liquid processing apparatus according to an embodiment of the present invention will be described with reference to FIG. FIG. 1 is a schematic view showing a configuration of a plating processing apparatus as an example of a substrate liquid processing apparatus according to an embodiment of the present invention. Here, the plating processing apparatus is an apparatus that supplies the plating solution L1 (processing liquid) to the processing surface Sw of the substrate W to perform plating processing (liquid processing) on the processing surface Sw of the substrate W.
　図１に示すように、本発明の実施の形態に係るめっき処理装置１は、めっき処理ユニット２と、めっき処理ユニット２の動作を制御する制御部３と、を備えている。 As shown in FIG. 1, the plating processing apparatus 1 according to the embodiment of the present invention includes a plating processing unit 2 and a control unit 3 that controls the operation of the plating processing unit 2.
　めっき処理ユニット２は、基板Ｗ（ウエハ）に対する各種処理を行う。めっき処理ユニット２が行う各種処理については後述する。 The plating unit 2 performs various processes on the substrate W (wafer). The various processes which the plating process unit 2 performs are mentioned later.
　制御部３は、例えばコンピュータであり、動作制御部と記憶部とを有している。動作制御部は、例えばＣＰＵ（Central Processing Unit）で構成されており、記憶部に記憶されているプログラムを読み出して実行することにより、めっき処理ユニット２の動作を制御する。記憶部は、例えばＲＡＭ（Random Access Memory）、ＲＯＭ（Read Only Memory）、ハードディスク等の記憶デバイスで構成されており、めっき処理ユニット２において実行される各種処理を制御するプログラムを記憶する。なお、プログラムは、コンピュータにより読み取り可能な記録媒体３１に記録されたものであってもよいし、その記録媒体３１から記憶部にインストールされたものであってもよい。コンピュータにより読み取り可能な記録媒体３１としては、例えば、ハードディスク（ＨＤ）、フレキシブルディスク（ＦＤ）、コンパクトディスク（ＣＤ）、マグネットオプティカルディスク（ＭＯ）、メモリカード等が挙げられる。記録媒体３１には、例えば、めっき処理装置１の動作を制御するためのコンピュータにより実行されたときに、コンピュータがめっき処理装置１を制御して後述するめっき処理方法を実行させるプログラムが記録される。 The control unit 3 is, for example, a computer, and includes an operation control unit and a storage unit. The operation control unit is configured of, for example, a CPU (Central Processing Unit), and controls the operation of the plating processing unit 2 by reading and executing a program stored in the storage unit. The storage unit is composed of, for example, a storage device such as a random access memory (RAM), a read only memory (ROM), or a hard disk, and stores a program for controlling various processes executed in the plating processing unit 2. The program may be recorded on a recording medium 31 readable by a computer, or may be installed from the recording medium 31 in a storage unit. Examples of the computer readable recording medium 31 include a hard disk (HD), a flexible disk (FD), a compact disk (CD), a magnet optical disk (MO), and a memory card. For example, when executed by a computer for controlling the operation of the plating processing apparatus 1, a program for controlling the plating processing apparatus 1 to execute a plating processing method described later is recorded in the recording medium 31. .
　図１を参照して、めっき処理ユニット２の構成を説明する。図１は、めっき処理ユニット２の構成を示す概略平面図である。 The configuration of the plating unit 2 will be described with reference to FIG. FIG. 1 is a schematic plan view showing the configuration of the plating unit 2.
　めっき処理ユニット２は、搬入出ステーション２１と、搬入出ステーション２１に隣接して設けられた処理ステーション２２と、を有している。 The plating processing unit 2 has a loading and unloading station 21 and a processing station 22 provided adjacent to the loading and unloading station 21.
　搬入出ステーション２１は、載置部２１１と、載置部２１１に隣接して設けられた搬送部２１２と、を含んでいる。 The loading / unloading station 21 includes a placement unit 211 and a transport unit 212 provided adjacent to the placement unit 211.
　載置部２１１には、複数枚の基板Ｗを水平状態で収容する複数の搬送容器（以下「キャリアＣ」という。）が載置される。 On the placement unit 211, a plurality of transfer containers (hereinafter, referred to as "carriers C") accommodating the plurality of substrates W in a horizontal state are placed.
　搬送部２１２は、搬送機構２１３と受渡部２１４とを含んでいる。搬送機構２１３は、基板Ｗを保持する保持機構を含み、水平方向及び鉛直方向への移動並びに鉛直軸を中心とする旋回が可能となるように構成されている。 The transport unit 212 includes a transport mechanism 213 and a delivery unit 214. The transport mechanism 213 includes a holding mechanism that holds the substrate W, and is configured to be able to move in the horizontal direction and the vertical direction and to pivot around the vertical axis.
　処理ステーション２２は、めっき処理部５を含んでいる。本実施の形態において、処理ステーション２２が有するめっき処理部５の個数は２つ以上であるが、１つであってもよい。めっき処理部５は、所定方向に延在する搬送路２２１の両側（後述する搬送機構２２２の移動方向に直交する方向における両側）に配列されている。 The processing station 22 includes a plating processing unit 5. In the present embodiment, the number of the plating processing units 5 included in the processing station 22 is two or more, but may be one. The plating processing units 5 are arranged on both sides of the transport path 221 extending in a predetermined direction (both sides in the direction orthogonal to the moving direction of the transport mechanism 222 described later).
　搬送路２２１には、搬送機構２２２が設けられている。搬送機構２２２は、基板Ｗを保持する保持機構を含み、水平方向及び鉛直方向への移動並びに鉛直軸を中心とする旋回が可能となるように構成されている。 In the transport path 221, a transport mechanism 222 is provided. The transport mechanism 222 includes a holding mechanism that holds the substrate W, and is configured to be able to move in the horizontal direction and the vertical direction and to pivot around the vertical axis.
　めっき処理ユニット２において、搬入出ステーション２１の搬送機構２１３は、キャリアＣと受渡部２１４との間で基板Ｗの搬送を行う。具体的には、搬送機構２１３は、載置部２１１に載置されたキャリアＣから基板Ｗを取り出し、取り出した基板Ｗを受渡部２１４に載置する。また、搬送機構２１３は、処理ステーション２２の搬送機構２２２により受渡部２１４に載置された基板Ｗを取り出し、載置部２１１のキャリアＣへ収容する。 In the plating processing unit 2, the transport mechanism 213 of the loading / unloading station 21 transports the substrate W between the carrier C and the delivery unit 214. Specifically, the transport mechanism 213 takes out the substrate W from the carrier C placed on the placement unit 211 and places the taken-out substrate W on the delivery unit 214. Further, the transport mechanism 213 takes out the substrate W placed on the delivery unit 214 by the transport mechanism 222 of the processing station 22, and stores the substrate W in the carrier C of the placement unit 211.
　めっき処理ユニット２において、処理ステーション２２の搬送機構２２２は、受渡部２１４とめっき処理部５との間、めっき処理部５と受渡部２１４との間で基板Ｗの搬送を行う。具体的には、搬送機構２２２は、受渡部２１４に載置された基板Ｗを取り出し、取り出した基板Ｗをめっき処理部５へ搬入する。また、搬送機構２２２は、めっき処理部５から基板Ｗを取り出し、取り出した基板Ｗを受渡部２１４に載置する。 In the plating unit 2, the transport mechanism 222 of the processing station 22 transports the substrate W between the delivery unit 214 and the plating unit 5 and between the plating unit 5 and the delivery unit 214. Specifically, the transport mechanism 222 takes out the substrate W placed on the delivery unit 214 and carries the taken-out substrate W into the plating processing unit 5. Further, the transport mechanism 222 takes out the substrate W from the plating processing unit 5 and places the taken-out substrate W on the delivery unit 214.
　次に図２を参照して、めっき処理部５の構成を説明する。図２は、めっき処理部５の構成を示す概略断面図である。 Next, the configuration of the plating processing unit 5 will be described with reference to FIG. FIG. 2 is a schematic cross-sectional view showing the configuration of the plating processing unit 5.
　めっき処理部５は、無電解めっき処理を含む液処理を行う。このめっき処理部５は、チャンバ５１と、チャンバ５１内に配置され、基板Ｗを水平に保持する基板保持部５２と、基板保持部５２に保持された基板Ｗの上面（処理面Ｓｗ）にめっき液Ｌ１（処理液）を供給するめっき液供給部５３（処理液供給部）と、を備える。本実施の形態では、基板保持部５２は、基板Ｗの下面（裏面）を真空吸着するチャック部材５２１を有する。この基板保持部５２はいわゆるバキュームチャックタイプであるが、基板保持部５２はこれに限られず、例えばチャック機構等によって基板Ｗの外縁部を把持するメカニカルチャックタイプであってもよい。 The plating processing unit 5 performs a liquid process including an electroless plating process. The plating processing unit 5 is disposed on the chamber 51, the substrate holding unit 52 disposed in the chamber 51 and holding the substrate W horizontally, and plating on the upper surface (processing surface Sw) of the substrate W held by the substrate holding unit 52. And a plating solution supply unit 53 (treatment solution supply unit) for supplying the solution L1 (treatment solution). In the present embodiment, the substrate holding unit 52 has a chuck member 521 that vacuum-sucks the lower surface (rear surface) of the substrate W. The substrate holding unit 52 is a so-called vacuum chuck type, but the substrate holding unit 52 is not limited to this, and may be, for example, a mechanical chuck type that holds the outer edge portion of the substrate W by a chuck mechanism or the like.
　基板保持部５２には、回転シャフト５２２を介して回転モータ５２３（回転駆動部）が連結されている。回転モータ５２３が駆動されると、基板保持部５２は基板Ｗとともに回転する。回転モータ５２３はチャンバ５１に固定されたベース５２４に支持されている。 A rotation motor 523 (rotation drive unit) is connected to the substrate holding unit 52 via a rotation shaft 522. When the rotation motor 523 is driven, the substrate holding unit 52 rotates with the substrate W. The rotary motor 523 is supported by a base 524 fixed to the chamber 51.
　めっき液供給部５３は、基板保持部５２に保持された基板Ｗにめっき液Ｌ１を吐出（供給）するめっき液ノズル５３１（処理液ノズル）と、めっき液ノズル５３１にめっき液Ｌ１を供給するめっき液供給源５３２と、を有する。めっき液供給源５３２は、所定の温度に加熱ないし温調されためっき液Ｌ１をめっき液ノズル５３１に供給する。めっき液ノズル５３１から吐出されるときのめっき液Ｌ１の温度は、基板Ｗの周囲の雰囲気温度よりも高い温度であり、例えば５５℃以上７５℃以下であり、より好ましくは６０℃以上７０℃以下である。めっき液ノズル５３１は、ノズルアーム５６に保持されて、移動可能に構成されている。 The plating solution supply unit 53 discharges (supplys) the plating solution L1 to the substrate W held by the substrate holding unit 52 (plating solution nozzle 531 (processing solution nozzle)) and plating that supplies the plating solution L1 to the plating solution nozzle 531 And a liquid supply source 532. The plating solution supply source 532 supplies the plating solution nozzle 531 with the plating solution L1 that has been heated or adjusted to a predetermined temperature. The temperature of the plating solution L1 when discharged from the plating solution nozzle 531 is a temperature higher than the ambient temperature around the substrate W, for example, 55 ° C. or more and 75 ° C. or less, more preferably 60 ° C. or more and 70 ° C. or less It is. The plating solution nozzle 531 is held by the nozzle arm 56 so as to be movable.
　めっき液Ｌ１は、自己触媒型（還元型）無電解めっき用のめっき液である。めっき液Ｌ１は、例えば、コバルト（Ｃｏ）イオン、ニッケル（Ｎｉ）イオン、タングステン（Ｗ）イオン、銅（Ｃｕ）イオン、パラジウム（Ｐｄ）イオン、金（Ａｕ）イオン等の金属イオンと、次亜リン酸、ジメチルアミンボラン等の還元剤とを含有する。めっき液Ｌ１は、添加剤等を含有していてもよい。めっき液Ｌ１を使用しためっき処理により形成されるめっき膜（金属膜）としては、例えば、ＣｏＷＢ、ＣｏＢ、ＣｏＷＰ、ＣｏＷＢＰ、ＮｉＷＢ、ＮｉＢ、ＮｉＷＰ、ＮｉＷＢＰ等が挙げられる。 The plating solution L1 is a plating solution for autocatalytic (reduction) electroless plating. The plating solution L1 includes, for example, metal ions such as cobalt (Co) ion, nickel (Ni) ion, tungsten (W) ion, copper (Cu) ion, palladium (Pd) ion, gold (Au) ion, and the like. It contains a reducing agent such as phosphoric acid and dimethylamine borane. The plating solution L1 may contain an additive and the like. Examples of the plating film (metal film) formed by the plating treatment using the plating solution L1 include CoWB, CoB, CoWP, CoWBP, NiWB, NiB, NiWP, NiWBP and the like.
　本実施の形態によるめっき処理部５は、他の処理液供給部として、基板保持部５２に保持された基板Ｗの上面に洗浄液Ｌ２を供給する洗浄液供給部５４と、当該基板Ｗの上面にリンス液Ｌ３を供給するリンス液供給部５５と、を更に備える。 As another processing liquid supply unit, the plating processing unit 5 according to the present embodiment rinses the upper surface of the substrate W with the cleaning liquid supply unit 54 that supplies the cleaning liquid L2 to the upper surface of the substrate W held by the substrate holding unit 52. And a rinse liquid supply unit 55 for supplying the liquid L3.
　洗浄液供給部５４は、基板保持部５２に保持された基板Ｗに洗浄液Ｌ２を吐出する洗浄液ノズル５４１と、洗浄液ノズル５４１に洗浄液Ｌ２を供給する洗浄液供給源５４２と、を有する。洗浄液Ｌ２としては、例えば、ギ酸、リンゴ酸、コハク酸、クエン酸、マロン酸等の有機酸、基板Ｗの被めっき面を腐食させない程度の濃度に希釈されたフッ化水素酸（ＤＨＦ）（フッ化水素の水溶液）等を使用することができる。洗浄液ノズル５４１は、ノズルアーム５６に保持されて、めっき液ノズル５３１とともに移動可能になっている。 The cleaning solution supply unit 54 has a cleaning solution nozzle 541 for discharging the cleaning solution L2 onto the substrate W held by the substrate holding unit 52, and a cleaning solution supply source 542 for supplying the cleaning solution L2 to the cleaning solution nozzle 541. Examples of the cleaning liquid L2 include organic acids such as formic acid, malic acid, succinic acid, citric acid and malonic acid, and hydrofluoric acid (DHF) diluted to a concentration that does not corrode the surface to be plated of the substrate W. An aqueous solution of hydrogen chloride or the like can be used. The cleaning solution nozzle 541 is held by the nozzle arm 56 so as to be movable together with the plating solution nozzle 531.
　リンス液供給部５５は、基板保持部５２に保持された基板Ｗにリンス液Ｌ３を吐出するリンス液ノズル５５１と、リンス液ノズル５５１にリンス液Ｌ３を供給するリンス液供給源５５２と、を有する。このうちリンス液ノズル５５１は、ノズルアーム５６に保持されて、めっき液ノズル５３１および洗浄液ノズル５４１とともに移動可能になっている。リンス液Ｌ３としては、例えば、純水などを使用することができる。 The rinse liquid supply unit 55 has a rinse liquid nozzle 551 that discharges the rinse liquid L3 onto the substrate W held by the substrate holding unit 52, and a rinse liquid supply source 552 that supplies the rinse liquid L3 to the rinse liquid nozzle 551. . Among these, the rinse solution nozzle 551 is held by the nozzle arm 56 and is movable together with the plating solution nozzle 531 and the cleaning solution nozzle 541. For example, pure water can be used as the rinse liquid L3.
　上述しためっき液ノズル５３１、洗浄液ノズル５４１、およびリンス液ノズル５５１を保持するノズルアーム５６に、図示しないノズル移動機構が連結されている。このノズル移動機構は、ノズルアーム５６を水平方向および上下方向に移動させる。より具体的には、ノズル移動機構によって、ノズルアーム５６は、基板Ｗに処理液（めっき液Ｌ１、洗浄液Ｌ２またはリンス液Ｌ３）を吐出する吐出位置と、吐出位置から退避した退避位置との間で移動可能になっている。吐出位置は、基板Ｗの上面のうちの任意の位置に処理液を供給可能であれば特に限られない。例えば、基板Ｗの中心に処理液を供給可能な位置を吐出位置とすることが好適である。基板Ｗにめっき液Ｌ１を供給する場合、洗浄液Ｌ２を供給する場合、リンス液Ｌ３を供給する場合とで、ノズルアーム５６の吐出位置は異なってもよい。退避位置は、チャンバ５１内のうち、上方から見た場合に基板Ｗに重ならない位置であって、吐出位置から離れた位置である。ノズルアーム５６が退避位置に位置づけられている場合、移動する蓋体６がノズルアーム５６と干渉することが回避される。 A nozzle moving mechanism (not shown) is connected to the nozzle arm 56 holding the plating solution nozzle 531, the cleaning solution nozzle 541, and the rinse solution nozzle 551 described above. The nozzle moving mechanism moves the nozzle arm 56 horizontally and vertically. More specifically, between the discharge position at which the nozzle arm 56 discharges the processing liquid (plating solution L1, cleaning liquid L2 or rinse liquid L3) onto the substrate W by the nozzle moving mechanism, and the retracted position retracted from the discharge position. It is possible to move with. The ejection position is not particularly limited as long as the processing liquid can be supplied to any position on the upper surface of the substrate W. For example, it is preferable to set a position where the processing liquid can be supplied to the center of the substrate W as a discharge position. When the plating solution L1 is supplied to the substrate W, when the cleaning liquid L2 is supplied, the discharge position of the nozzle arm 56 may be different depending on when the rinse liquid L3 is supplied. The retracted position is a position in the chamber 51 which does not overlap the substrate W when viewed from above, and is a position separated from the discharge position. When the nozzle arm 56 is positioned at the retracted position, interference of the moving lid 6 with the nozzle arm 56 is avoided.
　基板保持部５２及び基板Ｗの周囲には、液受けカップ５７１が設けられている。この液受けカップ５７１は、上方から見た場合に環状に形成されており、基板Ｗの回転時に、基板Ｗから飛散した処理液を受け止めて、後述するドレンダクト５８１に案内する。液受けカップ５７１の外周側には、雰囲気遮断カバー５７２が設けられており、基板Ｗの周囲の雰囲気がチャンバ５１内に拡散することを抑制している。この雰囲気遮断カバー５７２は、上下方向に延びるように円筒状に形成されており、上端が開口している。雰囲気遮断カバー５７２内に、後述する蓋体６が上方から挿入可能になっている。 A liquid receiving cup 571 is provided around the substrate holding portion 52 and the substrate W. The liquid receiving cup 571 is formed in an annular shape when viewed from above, and receives the processing liquid scattered from the substrate W when the substrate W rotates, and guides the processing liquid to a drain duct 581 described later. An atmosphere blocking cover 572 is provided on the outer peripheral side of the liquid receiving cup 571 to suppress the diffusion of the atmosphere around the substrate W into the chamber 51. The atmosphere blocking cover 572 is formed in a cylindrical shape so as to extend in the vertical direction, and the upper end is open. A lid 6 described later can be inserted into the atmosphere blocking cover 572 from above.
　基板保持部５２に保持された基板Ｗは、蓋体６によって覆われる。この蓋体６は、天井部６１と、天井部６１から下方に延びる側壁部６２と、を有する。天井部６１は、蓋体６が後述の下方位置に位置づけられた場合に、基板保持部５２に保持された基板Ｗの上方に配置されて、基板Ｗに対して比較的小さな間隔で対向する。 The substrate W held by the substrate holding unit 52 is covered by the lid 6. The lid 6 has a ceiling 61 and a side wall 62 extending downward from the ceiling 61. The ceiling portion 61 is disposed above the substrate W held by the substrate holding portion 52 when the lid 6 is positioned at a lower position described later, and faces the substrate W at a relatively small distance.
　天井部６１は、第１天井板６１１と、第１天井板６１１上に設けられた第２天井板６１２と、を含む。第１天井板６１１と第２天井板６１２との間には、ヒータ６３（加熱部）が介在する。第１天井板６１１および第２天井板６１２は、ヒータ６３を密封し、ヒータ６３がめっき液Ｌ１などの処理液に触れないように構成されている。より具体的には、第１天井板６１１と第２天井板６１２との間であってヒータ６３の外周側にシールリング６１３が設けられており、このシールリング６１３によってヒータ６３が密封されている。第１天井板６１１および第２天井板６１２は、めっき液Ｌ１などの処理液に対する耐腐食性を有することが好適であり、例えば、アルミニウム合金によって形成されていてもよい。更に耐腐食性を高めるために、第１天井板６１１、第２天井板６１２および側壁部６２は、テフロン（登録商標）でコーティングされていてもよい。 The ceiling portion 61 includes a first ceiling plate 611 and a second ceiling plate 612 provided on the first ceiling plate 611. A heater 63 (heating unit) is interposed between the first ceiling plate 611 and the second ceiling plate 612. The first ceiling plate 611 and the second ceiling plate 612 seal the heater 63 so that the heater 63 does not touch the processing solution such as the plating solution L1. More specifically, a seal ring 613 is provided between the first ceiling plate 611 and the second ceiling plate 612 on the outer peripheral side of the heater 63, and the heater 63 is sealed by the seal ring 613. . The first ceiling plate 611 and the second ceiling plate 612 preferably have corrosion resistance to a processing solution such as the plating solution L1, and may be made of, for example, an aluminum alloy. In order to further enhance the corrosion resistance, the first ceiling plate 611, the second ceiling plate 612 and the side wall portion 62 may be coated with Teflon (registered trademark).
　蓋体６には、蓋体アーム７１を介して蓋体移動機構７が連結されている。蓋体移動機構７は、蓋体６を水平方向および上下方向に移動させる。より具体的には、蓋体移動機構７は、蓋体６を水平方向に移動させる旋回モータ７２と、蓋体６を上下方向に移動させるシリンダ７３（間隔調節部）と、を有する。このうち旋回モータ７２は、シリンダ７３に対して上下方向に移動可能に設けられた支持プレート７４上に取り付けられている。シリンダ７３の代替として、モータとボールねじとを含むアクチュエータ（図示せず）を用いてもよい。 A lid moving mechanism 7 is connected to the lid 6 via a lid arm 71. The lid moving mechanism 7 moves the lid 6 horizontally and vertically. More specifically, the lid moving mechanism 7 has a swing motor 72 for moving the lid 6 in the horizontal direction, and a cylinder 73 (space adjustment unit) for moving the lid 6 in the vertical direction. Among them, the swing motor 72 is mounted on a support plate 74 provided so as to be movable in the vertical direction with respect to the cylinder 73. As an alternative to the cylinder 73, an actuator (not shown) including a motor and a ball screw may be used.
　蓋体移動機構７の旋回モータ７２は、蓋体６を、基板保持部５２に保持された基板Ｗの上方に配置された上方位置と、上方位置から退避した退避位置との間で移動させる。上方位置は、基板保持部５２に保持された基板Ｗに対して比較的大きな間隔で対向する位置であって、上方から見た場合に基板Ｗに重なる位置である。退避位置は、チャンバ５１内のうち、上方から見た場合に基板Ｗに重ならない位置である。蓋体６が退避位置に位置づけられている場合、移動するノズルアーム５６が蓋体６と干渉することが回避される。旋回モータ７２の回転軸線は、上下方向に延びており、蓋体６は、上方位置と退避位置との間で、水平方向に旋回移動可能になっている。 The swing motor 72 of the lid moving mechanism 7 moves the lid 6 between an upper position disposed above the substrate W held by the substrate holding unit 52 and a retracted position retracted from the upper position. The upper position is a position facing the substrate W held by the substrate holding unit 52 at a relatively large distance, and is a position overlapping the substrate W when viewed from above. The retracted position is a position in the chamber 51 which does not overlap the substrate W when viewed from above. When the lid 6 is positioned at the retracted position, interference of the moving nozzle arm 56 with the lid 6 is avoided. The rotation axis of the swing motor 72 extends in the vertical direction, and the lid 6 is horizontally horizontally movable between the upper position and the retracted position.
　蓋体移動機構７のシリンダ７３は、蓋体６を上下方向に移動させて、処理面Ｓｗ上にめっき液Ｌ１が盛られた基板Ｗと天井部６１の第１天井板６１１との間隔を調節する。より具体的には、シリンダ７３は、蓋体６を下方位置（図２において実線で示す位置）と、上方位置（図２において二点鎖線で示す位置）とに位置づける。 The cylinder 73 of the lid moving mechanism 7 moves the lid 6 in the vertical direction to adjust the distance between the substrate W on which the plating solution L1 is deposited on the processing surface Sw and the first ceiling plate 611 of the ceiling portion 61. Do. More specifically, the cylinder 73 positions the lid 6 at a lower position (indicated by a solid line in FIG. 2) and at an upper position (indicated by a two-dot chain line in FIG. 2).
　蓋体６が下方位置に配置される場合、第１天井板６１１が基板Ｗに近接する。この場合、めっき液Ｌ１の汚損やめっき液Ｌ１内での気泡発生を防止するために、第１天井板６１１が基板Ｗ上のめっき液Ｌ１に触れないように下方位置を設定することが好適である。 When the lid 6 is disposed at the lower position, the first ceiling plate 611 approaches the substrate W. In this case, it is preferable to set the lower position so that the first ceiling plate 611 does not touch the plating solution L1 on the substrate W in order to prevent the contamination of the plating solution L1 and the generation of air bubbles in the plating solution L1. is there.
　上方位置は、蓋体６を水平方向に旋回移動させる際に、液受けカップ５７１や、雰囲気遮断カバー５７２等の周囲の構造物に蓋体６が干渉することを回避可能な高さ位置になっている。 The upper position is at a height that can prevent the lid 6 from interfering with surrounding structures such as the liquid receiving cup 571 and the atmosphere blocking cover 572 when the lid 6 is moved in a horizontal direction. ing.
　本実施の形態では、ヒータ６３が駆動されて、上述した下方位置に蓋体６が位置づけられた場合に、基板Ｗ上のめっき液Ｌ１が加熱されるように構成されている。 In the present embodiment, when the heater 63 is driven and the lid 6 is positioned at the above-described lower position, the plating solution L1 on the substrate W is heated.
　蓋体６の側壁部６２は、天井部６１の第１天井板６１１の周縁部から下方に延びており、基板Ｗ上のめっき液Ｌ１を加熱する際（すなわち下方位置に蓋体６が位置づけられた場合）に基板Ｗの外周側に配置される。蓋体６が下方位置に位置づけられた場合、側壁部６２の下端は、基板Ｗよりも低い位置に位置づけられてもよい。 The side wall portion 62 of the lid 6 extends downward from the peripheral portion of the first ceiling plate 611 of the ceiling portion 61, and when heating the plating solution L1 on the substrate W (ie, the lid 6 is positioned at the lower position) Case) is disposed on the outer peripheral side of the substrate W. When the lid 6 is positioned at the lower position, the lower end of the side wall portion 62 may be positioned lower than the substrate W.
　蓋体６の天井部６１には、ヒータ６３が設けられている。ヒータ６３は、蓋体６が下方位置に位置づけられた場合に、基板Ｗ上の処理液（好適にはめっき液Ｌ１）を加熱する。本実施の形態では、ヒータ６３は、蓋体６の第１天井板６１１と第２天井板６１２との間に介在し、上述したように密封されており、ヒータ６３がめっき液Ｌ１などの処理液に触れることが防止されている。ヒータ６３は、特に限定されず、例えば面状発熱体であるマイカヒータを好適に用いることができる。 A heater 63 is provided on the ceiling portion 61 of the lid 6. The heater 63 heats the processing solution (preferably, the plating solution L1) on the substrate W when the lid 6 is positioned at the lower position. In the present embodiment, the heater 63 is interposed between the first ceiling plate 611 and the second ceiling plate 612 of the lid 6, and is sealed as described above, and the heater 63 is treated with the plating solution L1 or the like. It is prevented from touching the liquid. The heater 63 is not particularly limited. For example, a mica heater which is a planar heating element can be suitably used.
　本実施の形態においては、蓋体６の内側に、不活性ガス供給部６６によって不活性ガス（例えば、窒素（Ｎ２）ガス）が供給される。この不活性ガス供給部６６は、蓋体６の内側に不活性ガスを吐出するガスノズル６６１と、ガスノズル６６１に不活性ガスを供給する不活性ガス供給源６６２と、を有する。ガスノズル６６１は、蓋体６の天井部６１に設けられており、蓋体６が基板Ｗを覆う状態で基板Ｗに向かって不活性ガスを吐出する。 In the present embodiment, an inert gas (for example, nitrogen (N 2 ) gas) is supplied to the inside of the lid 6 by the inert gas supply unit 66. The inert gas supply unit 66 includes a gas nozzle 661 that discharges an inert gas to the inside of the lid 6 and an inert gas supply source 662 that supplies the gas nozzle 661 with the inert gas. The gas nozzle 661 is provided on the ceiling portion 61 of the lid 6 and discharges the inert gas toward the substrate W in a state where the lid 6 covers the substrate W.
　蓋体６の天井部６１および側壁部６２は、蓋体カバー６４により覆われている。この蓋体カバー６４は、蓋体６の第２天井板６１２上に、支持部６５を介して載置されている。すなわち、第２天井板６１２上に、第２天井板６１２の上面から上方に突出する複数の支持部６５が設けられており、この支持部６５に蓋体カバー６４が載置されている。蓋体カバー６４は、蓋体６とともに水平方向および上下方向に移動可能になっている。また、蓋体カバー６４は、蓋体６内の熱が周囲に逃げることを抑制するために、天井部６１および側壁部６２よりも高い断熱性を有することが好ましい。例えば、蓋体カバー６４は、樹脂材料により形成されていることが好適であり、その樹脂材料が耐熱性を有することがより一層好適である。 The ceiling portion 61 and the side wall portion 62 of the lid 6 are covered by a lid cover 64. The lid cover 64 is placed on the second ceiling plate 612 of the lid 6 via the support portion 65. That is, on the second ceiling plate 612, a plurality of support portions 65 projecting upward from the upper surface of the second ceiling plate 612 are provided, and the lid cover 64 is placed on the support portions 65. The lid cover 64 is movable together with the lid 6 in the horizontal and vertical directions. Further, the lid cover 64 preferably has higher heat insulation than the ceiling portion 61 and the side wall portion 62 in order to suppress heat in the lid 6 from escaping to the periphery. For example, the lid cover 64 is preferably made of a resin material, and it is more preferable that the resin material has heat resistance.
　このように本実施形態では、ヒータ６３を具備する蓋体６と蓋体カバー６４とが一体的に設けられ、下方位置に配置された場合に基板Ｗを内側に配置し且つ処理面Ｓｗを覆うカバーユニット１０が、これらの蓋体６及び蓋体カバー６４によって構成される。 As described above, in the present embodiment, the lid 6 having the heater 63 and the lid cover 64 are integrally provided, and the substrate W is disposed inside when covering the processing surface Sw when disposed at the lower position. The cover unit 10 is constituted by the lid 6 and the lid cover 64.
　チャンバ５１の上部に、蓋体６の周囲に清浄な空気（気体）を供給するファンフィルターユニット５９（気体供給部）が設けられている。ファンフィルターユニット５９は、チャンバ５１内（とりわけ、雰囲気遮断カバー５７２内）に空気を供給し、供給された空気は、後述する排気管８１に向かって流れる。蓋体６の周囲には、この空気が下向きに流れるダウンフローが形成され、めっき液Ｌ１などの処理液から気化したガスは、このダウンフローによって排気管８１に向かって流れる。このようにして、処理液から気化したガスが上昇してチャンバ５１内に拡散することを防止している。 At the upper portion of the chamber 51, a fan filter unit 59 (gas supply unit) for supplying clean air (gas) around the lid 6 is provided. The fan filter unit 59 supplies air into the chamber 51 (particularly, into the atmosphere blocking cover 572), and the supplied air flows toward an exhaust pipe 81 described later. A downflow in which the air flows downward is formed around the lid 6, and a gas vaporized from the processing solution such as the plating solution L1 flows toward the exhaust pipe 81 by the downflow. Thus, the gas vaporized from the processing liquid is prevented from rising and diffusing into the chamber 51.
　上述したファンフィルターユニット５９から供給された気体は、排気機構８によって排出されるようになっている。この排気機構８は、液受けカップ５７１の下方に設けられた２つの排気管８１と、ドレンダクト５８１の下方に設けられた排気ダクト８２と、を有する。このうち２つの排気管８１は、ドレンダクト５８１の底部を貫通し、排気ダクト８２にそれぞれ連通している。排気ダクト８２は、上方から見た場合に実質的に半円リング状に形成されている。本実施の形態では、ドレンダクト５８１の下方に１つの排気ダクト８２が設けられており、この排気ダクト８２に２つの排気管８１が連通している。 The gas supplied from the fan filter unit 59 described above is exhausted by the exhaust mechanism 8. The exhaust mechanism 8 has two exhaust pipes 81 provided below the liquid receiving cup 571 and an exhaust duct 82 provided below the drain duct 581. The two exhaust pipes 81 penetrate the bottom of the drain duct 581 and communicate with the exhaust duct 82, respectively. The exhaust duct 82 is substantially formed in a semicircular ring shape when viewed from above. In the present embodiment, one exhaust duct 82 is provided below the drain duct 581, and two exhaust pipes 81 communicate with the exhaust duct 82.
［環状壁］
　上述の構成を有するめっき処理装置１のめっき処理部５は、更に、環状壁４０を備える。環状壁４０は、上方からの平面視において、少なくとも一部が円盤状の基板Ｗの外周部を取り囲むように設けられており、基板Ｗの外周部の周囲の空間に対する気体の流入及び流出のうち少なくともいずれかを抑制する。図２に示す環状壁４０は、下方位置に配置されたカバーユニット１０（すなわち蓋体６及び蓋体カバー６４）の下方に形成される気体流通空間４２に対応する位置に設けられ、気体流通空間４２を介したカバーユニット１０の内側と外側との間における気体の流通を抑制する。 [Annular wall]
The plating processing unit 5 of the plating processing apparatus 1 having the above-described configuration further includes an annular wall 40. The annular wall 40 is provided so as to surround at least a part of the outer periphery of the disk-like substrate W in plan view from above, and the inflow and the outflow of the gas to the space around the outer periphery of the substrate W Suppress at least one of them. The annular wall 40 shown in FIG. 2 is provided at a position corresponding to the gas flow space 42 formed below the cover unit 10 (i.e., the lid 6 and the lid cover 64) disposed at the lower position, It restricts the flow of gas between the inside and the outside of the cover unit 10 through 42.
　図２に示すめっき処理部５では、カバーユニット１０のうち、基板Ｗを取り囲む位置に配置される側壁部分（すなわち蓋体６の側壁部６２及び蓋体カバー６４のうち側壁部６２を覆う部分）と、排気管８１の上方に設けられた案内部材５８３との間の空間によって、気体流通空間４２が構成されている。案内部材５８３は、基板Ｗよりも下方に設けられる環状部材であり、排気管８１の上方において下降するめっき液Ｌ１等の処理液の排気管８１内への進入を防ぎつつ、当該処理液をドレンダクト５８１に案内する。 In the plating unit 5 shown in FIG. 2, the side wall portion of the cover unit 10 disposed at a position surrounding the substrate W (that is, the portion covering the side wall portion 62 of the side wall portion 62 of the lid 6 and the lid cover 64) A gas flow space 42 is constituted by the space between the and the guide member 583 provided above the exhaust pipe 81. The guide member 583 is an annular member provided below the substrate W, and prevents the processing solution such as the plating solution L1 falling above the exhaust pipe 81 from entering the exhaust pipe 81 while draining the processing liquid from the substrate W. Guide to 581.
　図２に示す環状壁４０は、液受けカップ５７１の内側に設けられ、特に、下方位置に配置されたカバーユニット１０の内側において、水平方向に関して気体流通空間４２と向かい合う位置に配置される。より具体的には、環状壁４０は、基板Ｗよりも下方に設けられ、案内部材５８３から上方に向かって延在し、水平方向に関して気体流通空間４２と対向するとともにカバーユニット１０の側壁部分の一部（すなわち側壁部６２等の下端部分）とも対向する。この環状壁４０は全周にわたって均一な厚みを有し、上方からの平面視において、環状壁４０の一部（すなわち環状壁４０の内周側部分）は基板Ｗの外周部と重なり、環状壁４０の他の部分（すなわち環状壁４０の外周側部分）は基板Ｗよりも外側に設けられる。このように図２に示す環状壁４０は、基板Ｗの外周部よりも外側の空間だけではなく、基板Ｗの外周部の下方位置の空間にも配置され、比較的広範囲を占めるように設けられ、基板Ｗの外周部において気体が流通可能な空間のサイズを小さくしている。 The annular wall 40 shown in FIG. 2 is provided on the inside of the liquid receiving cup 571, and in particular, on the inside of the cover unit 10 disposed at the lower position, at a position facing the gas flow space 42 in the horizontal direction. More specifically, the annular wall 40 is provided below the substrate W, extends upward from the guide member 583, faces the gas flow space 42 in the horizontal direction, and is of the side wall portion of the cover unit 10 It also faces a part (that is, the lower end portion of the side wall portion 62 etc.). The annular wall 40 has a uniform thickness over the entire circumference, and in plan view from above, a portion of the annular wall 40 (that is, the inner peripheral portion of the annular wall 40) overlaps the outer periphery of the substrate W The other portion 40 (i.e., the outer peripheral portion of the annular wall 40) is provided outside the substrate W. Thus, the annular wall 40 shown in FIG. 2 is disposed not only in the space outside the outer periphery of the substrate W, but also in the space at the lower position of the outer periphery of the substrate W, and is provided to occupy a relatively wide range. In the outer peripheral portion of the substrate W, the size of the space through which the gas can flow is reduced.
　この環状壁４０の設置方法は限定されない。図２に示す環状壁４０は、案内部材５８３に対して固定されるが、案内部材５８３に対する具体的な固定方法は限定されず、例えば案内部材５８３を貫通するように設けられた図示しない固定具を介し、環状壁４０を案内部材５８３に対して固定することが可能である。また周囲に設けられる他の部材に対し、図示しない固定具等を介して環状壁４０を固定してもよい。 The installation method of this annular wall 40 is not limited. Although the annular wall 40 shown in FIG. 2 is fixed to the guide member 583, the specific fixing method to the guide member 583 is not limited. For example, a fixing member (not shown) provided so as to penetrate the guide member 583 The annular wall 40 can be fixed to the guiding member 583 via Further, the annular wall 40 may be fixed to other members provided around the periphery via a fixing tool or the like (not shown).
　上述の形状及び配置を有する環状壁４０は、基板Ｗの外周部における局所的な温度の低下を抑制することができる。すなわちカバーユニット１０によって囲まれる空間のうち、基板Ｗの外周部の近傍に環状壁４０を設けることにより、基板Ｗの外周部の周囲の空間を密閉空間に近づけることができる。これにより基板Ｗの外周部の周囲の空間に対する空気の流入や流出が抑えられ、そのような気流によってもたらされうる基板Ｗの外周部の温度低下を抑制できる。また基板Ｗの外周部の周囲の雰囲気温度を上昇させて、基板Ｗの外周部からの放熱を抑えることができる。さらに基板Ｗの外周部の周囲を密閉空間に近づけることで、基板Ｗの外周部の周囲から蒸気が逃げ難く、基板Ｗの外周部の周囲を飽和状態に近い状態を保つことが可能になり、基板Ｗの外周部に盛られためっき液Ｌ１の気化を低減できる。したがってめっき液Ｌ１の気化熱による基板Ｗの外周部の温度低下も防ぐことができ、より一層効果的に、基板Ｗの外周部における温度低下を抑制することができる。 The annular wall 40 having the above-described shape and arrangement can suppress local temperature decrease at the outer peripheral portion of the substrate W. That is, by providing the annular wall 40 in the vicinity of the outer peripheral portion of the substrate W in the space surrounded by the cover unit 10, the space around the outer peripheral portion of the substrate W can be brought close to the sealed space. Thereby, the inflow and outflow of air to and from the space around the outer peripheral portion of the substrate W can be suppressed, and the temperature decrease of the outer peripheral portion of the substrate W that can be brought about by such air flow can be suppressed. Further, the ambient temperature around the outer periphery of the substrate W can be raised to suppress the heat radiation from the outer periphery of the substrate W. Further, by bringing the periphery of the outer periphery of the substrate W closer to the sealed space, it is difficult for steam to escape from the periphery of the outer periphery of the substrate W, and the periphery of the outer periphery of the substrate W can be maintained in a saturated state. It is possible to reduce the vaporization of the plating solution L1 deposited on the outer peripheral portion of the substrate W. Therefore, the temperature decrease of the outer peripheral portion of the substrate W due to the heat of vaporization of the plating solution L1 can be prevented, and the temperature decrease of the outer peripheral portion of the substrate W can be suppressed more effectively.
［環状壁の典型例］
　なお、図２の環状壁４０は一例に過ぎず、環状壁４０は他の形状及び配置を有してもよい。 [Typical example of annular wall]
The annular wall 40 of FIG. 2 is merely an example, and the annular wall 40 may have other shapes and arrangements.
　図３～図６は、環状壁４０の典型例を示す部分拡大図である。図３～図６には、図２において符合「Ａ」によって示される環状壁４０（すなわち図２の左側に位置する環状壁４０の部分）に対応する位置での環状壁４０の状態が概略的に示されており、下方位置に配置された状態のカバーユニット１０の側壁部分（すなわち蓋体６の側壁部６２及び蓋体カバー６４のうち側壁部６２を覆う部分）が示されている。したがって図３～図６の各々において、図示のカバーユニット１０の側壁部分よりも右側がカバーユニット１０の内側（すなわち基板Ｗ（図示省略）が配置される側）に対応し、左側がカバーユニット１０の外側（すなわち液受けカップ５７１（図示省略）が配置される側）に対応する。 3 to 6 are partially enlarged views showing a typical example of the annular wall 40. FIG. In FIGS. 3 to 6, the condition of the annular wall 40 at the position corresponding to the annular wall 40 (ie, the portion of the annular wall 40 located on the left side of FIG. 2) indicated by the symbol “A” in FIG. The side wall portion of the cover unit 10 (ie, the side wall portion 62 of the lid 6 and the portion of the lid cover 64 that covers the side wall portion 62) is shown. Therefore, in each of FIGS. 3 to 6, the right side of the side wall portion of the illustrated cover unit 10 corresponds to the inner side of the cover unit 10 (that is, the side on which the substrate W (not shown) is disposed). (Ie, the side on which the liquid receiving cup 571 (not shown) is disposed).
　環状壁４０は、図３に示すように、下方位置に配置されたカバーユニット１０の内側において、水平方向に関してカバーユニット１０の側壁部分（すなわち蓋体６の側壁部６２及び蓋体カバー６４のうち側壁部６２を覆う部分）と基板Ｗとの間に配置されてもよい。すなわち環状壁４０は、上方からの平面視において基板Ｗの外周部と重ならなくてもよく、基板Ｗの外周部の直下に位置していなくてもよい。ただし、そのような場合であっても、環状壁４０は、上方からの平面視において基板Ｗの外周部を取り囲むように設けられる。また図３に示す環状壁４０は、気体流通空間４２に対応する位置（すなわち水平方向に関して気体流通空間４２と対向する位置）に設けられ、気体流通空間４２を介したカバーユニット１０の内側と外側との間における気体の流通を抑制する。 The annular wall 40 is, as shown in FIG. 3, inside the cover unit 10 disposed at the lower position, the side wall portion of the cover unit 10 in the horizontal direction (i.e., the side wall portion 62 of the lid 6 and the lid cover 64). It may be disposed between the substrate W and a portion covering the side wall portion 62. That is, the annular wall 40 may not overlap the outer peripheral portion of the substrate W in plan view from above, and may not be located immediately below the outer peripheral portion of the substrate W. However, even in such a case, the annular wall 40 is provided to surround the outer peripheral portion of the substrate W in plan view from above. Further, the annular wall 40 shown in FIG. 3 is provided at a position corresponding to the gas flow space 42 (that is, a position facing the gas flow space 42 in the horizontal direction), and the inside and the outside of the cover unit 10 via the gas flow space 42. Control the flow of gas between
　また環状壁４０は、図４に示すように、下方位置に配置されたカバーユニット１０の外側に配置されてもよい。すなわち環状壁４０は、水平方向に関してカバーユニット１０の側壁部分（すなわち蓋体６の側壁部６２及び蓋体カバー６４のうち側壁部６２を覆う部分）と液受けカップ５７１との間に配置されてもよい。ただし、そのような場合であっても、環状壁４０は、上方からの平面視において基板Ｗの外周部を取り囲むように、気体流通空間４２に対応する位置に設けられ、気体流通空間４２を介した気体の流通を抑制する。 The annular wall 40 may also be disposed outside the cover unit 10 disposed at the lower position, as shown in FIG. That is, the annular wall 40 is disposed between the side wall portion of the cover unit 10 (that is, the portion covering the side wall portion 62 of the side wall portion 62 of the lid 6 and the lid cover 64) in the horizontal direction It is also good. However, even in such a case, the annular wall 40 is provided at a position corresponding to the gas flow space 42 so as to surround the outer peripheral portion of the substrate W in plan view from above, Control the flow of the
　また環状壁４０は、気体流通空間４２を少なくとも部分的に塞ぐように配置されてもよい。図５に示される例では、カバーユニット１０の側壁部分（すなわち蓋体６の側壁部６２及び蓋体カバー６４のうち側壁部６２を覆う部分）に凹部１１が設けられており、下方位置に配置されたカバーユニット１０の凹部１１の内側に環状壁４０の一部（すなわち先端部４０ａ）が配置される。これにより、カバーユニット１０の側壁部分の下方に形成される気体流通空間４２が環状壁４０によって塞がれ、気体流通空間４２を介したカバーユニット１０の内側と外側との間における気体の流通をほぼ完全に遮断することができる。 The annular wall 40 may also be arranged to at least partially block the gas flow space 42. In the example shown in FIG. 5, the recess 11 is provided in the side wall portion of the cover unit 10 (that is, the portion covering the side wall portion 62 of the side wall portion 62 of the lid 6 and the lid cover 64) and disposed at the lower position A part of the annular wall 40 (i.e., the tip 40a) is disposed inside the recess 11 of the cover unit 10 that has been set. As a result, the gas flow space 42 formed under the side wall portion of the cover unit 10 is closed by the annular wall 40, and the flow of gas between the inside and the outside of the cover unit 10 via the gas flow space 42 is achieved. It can be shut off almost completely.
　なおカバーユニット１０の側壁部分に設けられる凹部１１は様々な態様で形成することが可能である。例えば図６に示すように、カバーユニット１０の側壁部分のうち鉛直方向に延在する位置から僅かに外れた位置に凹部１１が設けられてもよい。すなわち図６に示す凹部１１は、カバーユニット１０の側壁部分のうち、鉛直方向に延在する鉛直延在壁部１０ａと、鉛直延在壁部１０ａから分岐する分岐壁部１０ｂと、により囲まれる空間によって形成されている。なお分岐壁部１０ｂは、鉛直延在壁部１０ａに対する接続面を持たずに鉛直延在壁部１０ａと一体的に設けられてもよいし、鉛直延在壁部１０ａに対して外側から付加的に取り付けられてもよい。 In addition, the recessed part 11 provided in the side wall part of the cover unit 10 can be formed in various aspects. For example, as shown in FIG. 6, the recess 11 may be provided at a position slightly out of the vertically extending position of the side wall portion of the cover unit 10. That is, the concave portion 11 shown in FIG. 6 is surrounded by the vertically extending wall portion 10a extending in the vertical direction and the branch wall portion 10b branched from the vertically extending wall portion 10a in the side wall portion of the cover unit 10. It is formed by space. The branch wall portion 10b may be provided integrally with the vertically extending wall portion 10a without having a connection surface to the vertically extending wall portion 10a, or may be added to the vertically extending wall portion 10a from the outside. It may be attached to
　環状壁４０は図２～図６に示す典型例には限定されず、他の形状及び／または他の配置を有していてもよい。例えば、下方位置に配置されたカバーユニット１０（例えば側壁部分）に対して環状壁４０を接触させてもよい。また水平方向から見た場合に、環状壁４０は、カバーユニット１０（特に側壁部分）と少なくとも部分的に重なっていてもよいし、カバーユニット１０と重ならなくてもよい。また基板Ｗの外周部の温度低下を外周部の全体にわたって均一的に防ぐ観点からは、基板Ｗの外周部の全体に対して環状壁４０の形状及び配置が一様であることが好ましいが、例えば環状壁４０の一部に切り欠き等が設けられていてもよい。 Annular wall 40 is not limited to the exemplary embodiment shown in FIGS. 2-6 and may have other shapes and / or other arrangements. For example, the annular wall 40 may be in contact with the cover unit 10 (for example, the side wall portion) disposed at the lower position. Further, when viewed from the horizontal direction, the annular wall 40 may at least partially overlap the cover unit 10 (in particular, the side wall portion) or may not overlap the cover unit 10. Further, from the viewpoint of preventing temperature decrease of the outer peripheral portion of the substrate W uniformly over the entire outer peripheral portion, it is preferable that the shape and arrangement of the annular wall 40 be uniform with respect to the entire outer peripheral portion of the substrate W, For example, a notch or the like may be provided in a part of the annular wall 40.
　次に、このような構成からなる本実施の形態の作用について、図７を用いて説明する。ここでは、基板液処理方法の一例として、めっき処理装置１を用いためっき処理方法について説明する。 Next, the operation of the present embodiment having such a configuration will be described with reference to FIG. Here, a plating processing method using the plating processing apparatus 1 will be described as an example of the substrate liquid processing method.
　めっき処理装置１によって実施されるめっき処理方法は、基板Ｗに対するめっき処理を含む。めっき処理は、めっき処理部５により実施される。以下に示すめっき処理部５の動作は、制御部３によって制御される。なお、下記の処理が行われている間、ファンフィルターユニット５９から清浄な空気がチャンバ５１内に供給され、排気管８１に向かって流れる。 The plating method implemented by the plating apparatus 1 includes a plating process on the substrate W. The plating process is performed by the plating unit 5. The operation of the plating processing unit 5 described below is controlled by the control unit 3. During the following processing, clean air is supplied from the fan filter unit 59 into the chamber 51 and flows toward the exhaust pipe 81.
　まず、めっき処理部５に基板Ｗが搬入され、基板Ｗが基板保持部５２によって水平に保持される（ステップＳ１）。 First, the substrate W is carried into the plating processing unit 5, and the substrate W is held horizontally by the substrate holding unit 52 (step S1).
　次に、基板保持部５２に保持された基板Ｗの洗浄処理が行われる（ステップＳ２）。この洗浄処理では、まず回転モータ５２３が駆動されて基板Ｗが所定の回転数で回転し、続いて、退避位置に位置づけられていたノズルアーム５６が吐出位置に移動し、回転する基板Ｗに洗浄液ノズル５４１から洗浄液Ｌ２が供給されて、基板Ｗの表面が洗浄される。これにより基板Ｗに付着した付着物等が基板Ｗから除去される。基板Ｗに供給された洗浄液Ｌ２はドレンダクト５８１に排出される。 Next, cleaning processing of the substrate W held by the substrate holding unit 52 is performed (step S2). In this cleaning process, the rotary motor 523 is first driven to rotate the substrate W at a predetermined number of rotations, and then the nozzle arm 56 positioned at the retracted position is moved to the discharge position, and the rotating substrate W is cleaned The cleaning liquid L2 is supplied from the nozzle 541 to clean the surface of the substrate W. As a result, the deposit or the like attached to the substrate W is removed from the substrate W. The cleaning liquid L2 supplied to the substrate W is discharged to the drain duct 581.
　続いて、基板Ｗのリンス処理が行われる（ステップＳ３）。このリンス処理では、回転する基板Ｗにリンス液ノズル５５１からリンス液Ｌ３が供給されて、基板Ｗの表面がリンス処理される。これにより基板Ｗ上に残存する洗浄液Ｌ２が洗い流される。基板Ｗに供給されたリンス液Ｌ３はドレンダクト５８１に排出される。 Subsequently, a rinse process is performed on the substrate W (step S3). In this rinse process, the rinse solution L3 is supplied from the rinse solution nozzle 551 to the rotating substrate W to rinse the surface of the substrate W. Thus, the cleaning liquid L2 remaining on the substrate W is washed away. The rinse liquid L3 supplied to the substrate W is discharged to the drain duct 581.
　次に、基板Ｗの処理面Ｓｗ上にめっき液Ｌ１のパドルを形成するめっき液盛り付け工程が行われる（ステップＳ４）。この工程では、まず、基板Ｗの回転数がリンス処理時の回転数よりも低減され、例えば基板Ｗの回転数を５０～１５０ｒｐｍにしてもよい。これにより、基板Ｗ上に形成されるめっき膜を均一化させることができる。なお、基板Ｗの回転を停止させて、めっき液Ｌ１の盛り付け量を増大してもよい。続いて、めっき液ノズル５３１から基板Ｗの上面（すなわち処理面Ｓｗ）にめっき液Ｌ１が吐出される。このめっき液Ｌ１は表面張力によって処理面Ｓｗに留まり、めっき液Ｌ１の層（いわゆるパドル）が形成される。めっき液Ｌ１の一部は、処理面Ｓｗから流出してドレンダクト５８１介して排出される。所定量のめっき液Ｌ１がめっき液ノズル５３１から吐出された後、めっき液Ｌ１の吐出が停止される。その後、ノズルアーム５６は退避位置に位置づけられる。 Next, a plating solution application step of forming a paddle of the plating solution L1 on the processing surface Sw of the substrate W is performed (step S4). In this step, first, the number of rotations of the substrate W is reduced compared to the number of rotations at the time of the rinse process, and for example, the number of rotations of the substrate W may be 50 to 150 rpm. Thereby, the plating film formed on the substrate W can be made uniform. The amount of deposition of the plating solution L1 may be increased by stopping the rotation of the substrate W. Subsequently, the plating solution L1 is discharged from the plating solution nozzle 531 to the upper surface (that is, the processing surface Sw) of the substrate W. The plating solution L1 remains on the treated surface Sw due to surface tension, and a layer (so-called paddle) of the plating solution L1 is formed. A portion of the plating solution L1 flows out of the processing surface Sw and is discharged through the drain duct 581. After the predetermined amount of plating solution L1 is discharged from the plating solution nozzle 531, the discharge of the plating solution L1 is stopped. Thereafter, the nozzle arm 56 is positioned at the retracted position.
　次に、めっき液加熱処理工程として、基板Ｗ上に盛り付けられためっき液Ｌ１が加熱される。このめっき液加熱処理工程は、蓋体６が基板Ｗを覆う工程（ステップＳ５）と、不活性ガスを供給する工程（ステップＳ６）と、蓋体６を下方位置に配置してめっき液Ｌ１を加熱する加熱工程（ステップＳ７）と、蓋体６を基板Ｗ上から退避する工程（ステップＳ８）と、を有する。なお、めっき液加熱処理工程においても、基板Ｗの回転数は、めっき液盛り付け工程と同様の速度（あるいは回転停止）で維持されることが好適である。 Next, as a plating solution heat treatment step, the plating solution L1 deposited on the substrate W is heated. In the plating solution heating process, a process of covering the substrate W with the cover 6 (step S5), a process of supplying an inert gas (step S6), and the process of arranging the cover 6 at a lower position A heating step (step S7) of heating and a step (step S8) of retracting the lid 6 from above the substrate W are included. Also in the plating solution heat treatment step, the number of rotations of the substrate W is preferably maintained at the same speed (or the rotation stop) as the plating solution deposition step.
　蓋体６が基板Ｗを覆う工程（ステップＳ５）では、まず、蓋体移動機構７の旋回モータ７２が駆動されて、退避位置に位置づけられていた蓋体６が水平方向に旋回移動して、上方位置に位置づけられる。続いて、蓋体移動機構７のシリンダ７３が駆動されて、上方位置に位置づけられた蓋体６が下降して下方位置に位置づけられ、基板Ｗが蓋体６によって覆われて、基板Ｗの周囲の空間が閉塞化される。 In the step of covering the substrate W with the lid 6 (step S5), first, the swing motor 72 of the lid moving mechanism 7 is driven to horizontally move the lid 6 positioned at the retracted position in the horizontal direction. It is located at the upper position. Subsequently, the cylinder 73 of the lid moving mechanism 7 is driven, and the lid 6 positioned at the upper position is lowered and positioned at the lower position, and the substrate W is covered by the lid 6 and the periphery of the substrate W Space is blocked.
　基板Ｗが蓋体６によって覆われた後、蓋体６の天井部６１に設けられたガスノズル６６１から蓋体６の内側に不活性ガスが吐き出される（ステップＳ６）。これにより蓋体６の内側の空気が不活性ガスに置換され、基板Ｗの周囲が低酸素雰囲気になる。不活性ガスは、所定時間吐出され、その後、不活性ガスの吐出を停止する。 After the substrate W is covered by the lid 6, an inert gas is discharged from the gas nozzle 661 provided on the ceiling 61 of the lid 6 to the inside of the lid 6 (step S6). Thereby, the air inside the lid 6 is replaced with the inert gas, and the periphery of the substrate W becomes a low oxygen atmosphere. The inert gas is discharged for a predetermined time, and then the discharge of the inert gas is stopped.
　次に、基板Ｗ上に盛り付けられためっき液Ｌ１が加熱される（ステップＳ７）。めっき液Ｌ１の温度が、めっき液Ｌ１中の成分が析出する温度まで上昇すると、基板Ｗの上面にめっき液Ｌ１の成分が析出してめっき膜が形成され成長する。この加熱工程では、所望厚さのめっき膜を得るのに必要な時間、めっき液Ｌ１は加熱されて析出温度に維持される。 Next, the plating solution L1 deposited on the substrate W is heated (step S7). When the temperature of the plating solution L1 rises to a temperature at which the component in the plating solution L1 precipitates, the component of the plating solution L1 precipitates on the upper surface of the substrate W to form and grow a plating film. In this heating step, the plating solution L1 is heated and maintained at the deposition temperature for a time necessary to obtain a plating film having a desired thickness.
　加熱工程が終了すると、蓋体移動機構７が駆動されて、蓋体６が退避位置に位置づけられる（ステップＳ８）。このようにして、基板Ｗのめっき液加熱処理工程（ステップＳ５～Ｓ８）が終了する。 When the heating process is completed, the lid moving mechanism 7 is driven to position the lid 6 at the retracted position (step S8). Thus, the plating solution heat treatment process (steps S5 to S8) of the substrate W is completed.
　次に、基板Ｗのリンス処理が行われる（ステップＳ９）。このリンス処理では、まず、基板Ｗの回転数をめっき処理時の回転数よりも増大させ、例えばめっき処理前の基板リンス処理工程（ステップＳ３）と同様の回転数で基板Ｗを回転させる。続いて、退避位置に位置づけられていたリンス液ノズル５５１が、吐出位置に移動する。次に、回転する基板Ｗにリンス液ノズル５５１からリンス液Ｌ３が供給されて、基板Ｗの表面が洗浄され、基板Ｗ上に残存するめっき液Ｌ１が洗い流される。 Next, the substrate W is rinsed (step S9). In this rinse process, first, the number of rotations of the substrate W is increased more than the number of rotations during the plating process, and the substrate W is rotated at the same number of rotations as the substrate rinsing process (step S3) before the plating process, for example. Subsequently, the rinse liquid nozzle 551 positioned at the retracted position is moved to the discharge position. Next, the rinse solution L3 is supplied from the rinse solution nozzle 551 to the rotating substrate W, the surface of the substrate W is cleaned, and the plating solution L1 remaining on the substrate W is washed away.
　続いて、基板Ｗの乾燥処理が行われる（ステップＳ１０）。この乾燥処理では、基板Ｗを高速で回転させ、例えば基板Ｗの回転数を基板リンス処理工程（ステップＳ９）の回転数よりも増大させる。これにより基板Ｗ上に残存するリンス液Ｌ３が振り切られて除去され、めっき膜が形成された基板Ｗが得られる。この場合、窒素（Ｎ２）ガスなどの不活性ガスを基板Ｗに吹き付けて、基板Ｗの乾燥を促進してもよい。 Subsequently, the substrate W is dried (step S10). In this drying process, the substrate W is rotated at a high speed, and, for example, the number of rotations of the substrate W is increased more than the number of rotations of the substrate rinsing process (step S9). Thereby, the rinse liquid L3 remaining on the substrate W is shaken off and removed, and the substrate W on which the plating film is formed is obtained. In this case, drying of the substrate W may be promoted by blowing an inert gas such as nitrogen (N 2 ) gas onto the substrate W.
　その後、基板Ｗが基板保持部５２から取り出されて、めっき処理部５から搬出される（ステップＳ１１）。 Thereafter, the substrate W is taken out of the substrate holding unit 52 and carried out of the plating processing unit 5 (step S11).
　以上説明したように本実施の形態では、環状壁４０によって、気体流通空間４２を介したカバーユニット１０の内側と外側との間における気体の流通を抑制し、基板Ｗの外周部の周囲の空間への気体の流入及び／又は流出を抑制することができる。このようにして基板Ｗの外周部の周囲の空間を密閉空間に近づけることで、基板Ｗの外周部の局所的な温度低下を効果的に抑えることができる。 As described above, in the present embodiment, the annular wall 40 suppresses the flow of gas between the inside and the outside of the cover unit 10 via the gas flow space 42, and the space around the outer peripheral portion of the substrate W Inflow and / or outflow of gas to / from can be suppressed. By bringing the space around the outer peripheral portion of the substrate W closer to the sealed space in this manner, it is possible to effectively suppress the local temperature drop of the outer peripheral portion of the substrate W.
［第１の変形例］
　図８は、第１の変形例に係るめっき処理部５の構成を示す断面図である。本変形例のめっき処理部５は、図２に示す環状壁４０の代わりに、環状の付加加熱部４４を更に備える。 [First Modification]
FIG. 8 is a cross-sectional view showing a configuration of a plating processing unit 5 according to a first modification. The plating processing unit 5 of this modification further includes an annular additional heating unit 44 in place of the annular wall 40 shown in FIG. 2.
　付加加熱部４４は、蓋体６の第１天井板６１１の下方に設けられ、特に基板Ｗの外周部の近傍に配置される。付加加熱部４４は、ヒータ６３から発せられて第１天井板６１１により伝えられる熱を、更に伝えて放射する部材である。そのため付加加熱部４４は、伝熱性及び放熱性に優れるとともにめっき液Ｌ１などの処理液に対して優れた耐腐食性を示す材料によって構成され、典型的には第１天井板６１１と同じ材料によって構成される。したがって付加加熱部４４は、第１天井板６１１と一体的に設けられてもよいし、第１天井板６１１とは別体として設けられてもよい。 The additional heating unit 44 is provided below the first ceiling plate 611 of the lid 6, and in particular, is disposed near the outer peripheral portion of the substrate W. The additional heating unit 44 is a member that further transmits and radiates the heat emitted from the heater 63 and transmitted by the first ceiling plate 611. Therefore, the additional heating unit 44 is made of a material that is excellent in heat conductivity and heat dissipation, and exhibits excellent corrosion resistance to the processing solution such as the plating solution L1, and is typically made of the same material as the first ceiling plate 611. Configured Therefore, the additional heating unit 44 may be provided integrally with the first ceiling plate 611, or may be provided separately from the first ceiling plate 611.
　付加加熱部４４は、蓋体６（特に第１天井板６１１）と基板Ｗ（特に処理面Ｓｗ）との間のギャップ（間隔）を狭くするために設けられるパーツであり、機能的には蓋体６の一部として働く。すなわち付加加熱部４４によって、ヒータ６３からの熱が、基板Ｗ（特に処理面Ｓｗ）に対してより近い位置で放射され、基板Ｗの外周部における局所的な温度の低下を防ぐことができる。 The additional heating unit 44 is a part provided to narrow the gap (distance) between the lid 6 (in particular, the first ceiling plate 611) and the substrate W (in particular, the processing surface Sw), and functionally it is a lid Work as part of body 6 That is, heat from the heater 63 is radiated at a position closer to the substrate W (in particular, the processing surface Sw) by the additional heating unit 44, and it is possible to prevent a local temperature drop at the outer peripheral portion of the substrate W.
　したがって付加加熱部４４は、ヒータ６３からの熱を基板Ｗの外周部に対して効率的に伝えることができる態様で設置可能であり、図８に示す設置態様には限定されない。例えば、付加加熱部４４の少なくとも一部が、基板Ｗの外周部の上方に位置していてもよい。また基板Ｗの外周側ほど温度が低下しやすいことを考慮し、基板Ｗの外周側ほど処理面Ｓｗの近くに配置されるように付加加熱部４４が設けられてもよい。具体的には、付加加熱部４４の少なくとも一部において基板Ｗの処理面Ｓｗに対向する面を傾斜させ、この傾斜面と処理面Ｓｗとの間の距離を基板Ｗの外周側ほど小さくしてもよい。この場合、基板Ｗの外周側ほど効果的に熱せられ、基板Ｗの外周部における温度低下を防ぎつつ、処理面Ｓｗ全体にわたる温度の均一化を図ることができる。また付加加熱部４４の一部を第１天井板６１１と側壁部６２との間に配置することによって、付加加熱部４４の配置精度及び固定精度を向上させることができる。 Therefore, the additional heating unit 44 can be installed in a mode that can efficiently transfer the heat from the heater 63 to the outer peripheral portion of the substrate W, and is not limited to the installation mode shown in FIG. For example, at least a portion of the additional heating unit 44 may be located above the outer peripheral portion of the substrate W. In consideration of the fact that the temperature is likely to decrease toward the outer periphery of the substrate W, the additional heating unit 44 may be provided so as to be disposed closer to the processing surface Sw as the outer periphery of the substrate W is. Specifically, the surface facing the processing surface Sw of the substrate W is inclined in at least a part of the additional heating unit 44, and the distance between the inclined surface and the processing surface Sw is reduced toward the outer periphery of the substrate W. It is also good. In this case, it is possible to effectively heat the substrate W toward the outer peripheral side, and to prevent the temperature decrease in the outer peripheral portion of the substrate W, and to make the temperature uniform over the entire processing surface Sw. Further, by arranging a part of the additional heating part 44 between the first ceiling plate 611 and the side wall part 62, it is possible to improve the placement accuracy and the fixing accuracy of the additional heating part 44.
　なお上述の付加加熱部４４は、基板Ｗの外周部の周囲の空間に対する気体の流入及び／又は流出を抑制する役割を果たすため、一種の環状壁（図２の符合「４０」参照）としても働く。 The above-mentioned additional heating unit 44 plays a role of suppressing the inflow and / or the outflow of the gas to the space around the outer peripheral portion of the substrate W, so it is also used as a kind of annular wall (see reference numeral 40 in FIG. 2). work.
［第２の変形例］
　図９は、第２の変形例に係るめっき処理部５の構成を示す断面図である。本変形例のめっき処理部５は、図２に示す環状壁４０の代わりに、環状の貯水部４６を更に備える。 Second Modified Example
FIG. 9 is a cross-sectional view showing a configuration of a plating processing unit 5 according to a second modification. The plating processing unit 5 of this modification further includes an annular water storage unit 46 instead of the annular wall 40 shown in FIG. 2.
　貯水部４６は、下方位置に配置されるカバーユニット１０の内側において、基板Ｗの外周部の下方に配置され、案内部材５８３に固定されている。貯水部４６は溝部４８を有し、基板Ｗの周囲の雰囲気温度よりも高温の温水（例えば加熱されたＤＩＷ）が溝部４８に貯められる。 The water reservoir 46 is disposed below the outer peripheral portion of the substrate W inside the cover unit 10 disposed at the lower position, and is fixed to the guide member 583. The water reservoir 46 has a groove 48, and hot water (for example, heated DIW) having a temperature higher than the ambient temperature around the substrate W is stored in the groove 48.
　この貯水部４６は、溝部４８内の温水から放射される熱及び当該温水の蒸気によって、基板Ｗの加熱をアシストする機構であり、特に、基板Ｗの処理面Ｓｗ及び当該処理面Ｓｗ上のめっき液Ｌ１がヒータ６３の熱によって加熱される前から基板Ｗを加熱する。 The water reservoir 46 is a mechanism for assisting the heating of the substrate W by the heat radiated from the warm water in the groove 48 and the steam of the warm water, and in particular, the treated surface Sw of the substrate W and the plating on the treated surface Sw Before the liquid L1 is heated by the heat of the heater 63, the substrate W is heated.
　処理面Ｓｗ上のめっき液Ｌ１の温度は、主に、めっき液供給源５３２におけるめっき液Ｌ１の温度調整と、ヒータ６３が発する熱による加熱とに基づいて行われていた。したがってめっき液Ｌ１は、処理面Ｓｗ上に供給後カバーユニット１０（すなわちヒータ６３）による加熱が開始されるまでの間に、温度が徐々に低下する。そのようなめっき液Ｌ１の温度低下は、めっき処理の反応（特に初期段階の反応）に悪影響を及ぼしうるため、可能な限り防がれることが好ましい。 The temperature of the plating solution L1 on the processing surface Sw is mainly based on the temperature adjustment of the plating solution L1 in the plating solution supply source 532 and the heating by the heat generated by the heater 63. Therefore, the temperature of the plating solution L1 gradually decreases until the heating by the cover unit 10 (that is, the heater 63) is started after being supplied onto the processing surface Sw. Such a temperature drop of the plating solution L1 is preferably prevented as much as possible because it may adversely affect the reaction of the plating process (in particular, the initial reaction).
　本変形例のめっき処理部５では、そのようなめっき液Ｌ１の温度低下を抑制するため、処理面Ｓｗにめっき液Ｌ１が供給される前から、貯水部４６の溝部４８に温水が貯留され、当該温水を熱源として基板Ｗが加熱される。なお熱源として基板Ｗの裏面側にヒータ等の発熱体を設置することも考えられるが、実際には、そのような発熱体を設けるスペースを確保することが難しい場合がある。また処理面Ｓｗからのめっき液Ｌ１の回り込みやめっき処理後のリンス処理等のために、基板Ｗの裏面が薬液及び純水に晒され、そのような発熱体の設置が好ましくない場合がある。またそのような発熱体は、基板Ｗと発熱体との間の空気も加熱するため、必ずしも効率良く基板Ｗを加熱することができない。一方、本変形例の貯水部４６は、設置が比較的簡単である。また溝部４８内の温水と基板Ｗとの間には蒸気が介在するため、効率良く基板Ｗを加熱することができる。また基板Ｗの裏面が薬液及び純水に晒されても、温水を熱源とする本変形例では特に問題が発生しない。また基板Ｗの加熱が必要な場合には溝部４８に温水を貯め、基板Ｗの加熱が不要な場合（例えば基板Ｗの乾燥処理時等）には溝部４８から温水を排出すればよく、基板Ｗの温調制御を簡単に行うことができる。また溝部４８に供給される温水は、例えばめっき液Ｌ１を事前に温めるための熱交換器（図示省略）で使用される温水や他のプロセスで使用される温水を利用することが可能であり、めっき処理部５に対して貯水部４６を容易に導入することが可能である。 In the plating processing unit 5 of this modification, hot water is stored in the groove portion 48 of the water storage unit 46 before the plating solution L1 is supplied to the processing surface Sw in order to suppress such temperature decrease of the plating solution L1. The substrate W is heated using the hot water as a heat source. Although it is conceivable to place a heating element such as a heater on the back side of the substrate W as a heat source, it may be difficult in practice to secure a space for providing such a heating element. Further, the back surface of the substrate W may be exposed to the chemical solution and the pure water for the wraparound of the plating solution L1 from the processing surface Sw, the rinse process after the plating process, and the like, and the installation of such a heating element may not be preferable. In addition, since such a heating element also heats the air between the substrate W and the heating element, the substrate W can not always be efficiently heated. On the other hand, the water storage unit 46 of this modification is relatively easy to install. Further, since steam is present between the hot water in the groove portion 48 and the substrate W, the substrate W can be efficiently heated. Further, even if the back surface of the substrate W is exposed to the chemical solution and the pure water, no particular problem occurs in the present modification using hot water as a heat source. Further, if heating of the substrate W is necessary, hot water is stored in the groove 48, and if heating of the substrate W is unnecessary (for example, at the time of drying processing of the substrate W), the hot water may be discharged from the groove 48. Temperature control can be easily performed. Further, as the warm water supplied to the groove portion 48, for example, it is possible to use warm water used in a heat exchanger (not shown) for warming the plating solution L1 in advance, or warm water used in other processes, It is possible to easily introduce the water storage section 46 to the plating processing section 5.
　なお溝部４８への温水の供給方法及び溝部４８からの温水の排出方法は限定されない。例えば、貯水部４６の内周側の側壁部に温水供給用の配管を設けて、めっき液ノズル５３１から処理面Ｓｗにめっき液Ｌ１が供給される前に、当該配管を介して溝部４８に所定量の温水を供給することができる。また溝部４８の底面に温水排出用の配管を設けて、カバーユニット１０が下方位置に配置されてヒータ６３からの熱によって基板Ｗの温度が安定した後に、当該配管を介して溝部４８から温水を排出することができる。 The method of supplying hot water to the groove 48 and the method of discharging hot water from the groove 48 are not limited. For example, a pipe for supplying hot water is provided on a side wall portion on the inner peripheral side of the water storage portion 46, and before the plating solution L1 is supplied from the plating solution nozzle 531 to the processing surface Sw, the groove 48 is located via the pipe. It can supply a fixed amount of hot water. In addition, a pipe for hot water discharge is provided on the bottom of the groove 48, and the cover unit 10 is disposed at the lower position, and the heat from the heater 63 stabilizes the temperature of the substrate W. It can be discharged.
　上述の貯水部４６は、図９に示す設置態様には限定されない。図９に示す貯水部４６（特に溝部４８）は基板Ｗの外周部に対向する位置に設けられているが、温水を使って基板Ｗの全体を効率良く加熱する観点からは、基板Ｗの裏面のより広い部分と対向する範囲に溝部４８が設けられることが好ましい。 The above-mentioned water storage part 46 is not limited to the installation mode shown in FIG. The water reservoir 46 (in particular, the groove 48) shown in FIG. 9 is provided at a position facing the outer periphery of the substrate W, but from the viewpoint of efficiently heating the entire substrate W using warm water, the back surface of the substrate W Preferably, a groove 48 is provided in the area facing the wider part of the groove.
　なお上述の貯水部４６は、基板Ｗの外周部の周囲の空間への気体の流入及び／又は流出を抑制する役割を果たすため、一種の環状壁（図２の符合「４０」参照）としても働く。 The above-described water reservoir 46 plays a role of suppressing the inflow and / or outflow of gas into the space around the outer peripheral portion of the substrate W, so it is also used as a kind of annular wall (see symbol “40” in FIG. 2). work.
　本発明は上記実施の形態および変形例そのままに限定されるものではなく、実施段階ではその要旨を逸脱しない範囲で構成要素を変形して具体化できる。また、上記実施の形態および変形例に開示されている複数の構成要素の適宜な組み合わせにより、種々の発明を形成できる。実施の形態および変形例に示される全構成要素から幾つかの構成要素を削除してもよい。さらに、異なる実施の形態および変形例にわたる構成要素を適宜組み合わせてもよい。 The present invention is not limited to the above embodiment and modification as it is, and at the implementation stage, the constituent elements can be modified and embodied without departing from the scope of the invention. Further, various inventions can be formed by appropriate combinations of a plurality of constituent elements disclosed in the above-described embodiment and modification. Some components may be deleted from all the components shown in the embodiment and the modification. Furthermore, components in different embodiments and variations may be combined as appropriate.
　例えば、めっき液Ｌ１以外の処理液及びめっき処理以外の液処理に対しても本発明に係る基板液処理装置及び基板液処理方法は有効である。また、基板液処理装置（めっき処理装置１）の動作を制御するためのコンピュータにより実行されたときに、コンピュータが基板液処理装置を制御して上述のような基板液処理方法を実行させるプログラムが記録された記録媒体（例えば制御部３の記録媒体３１）として、本発明が具体化されてもよい。 For example, the substrate liquid processing apparatus and the substrate liquid processing method according to the present invention are effective for processing liquids other than the plating liquid L1 and liquid processing other than the plating processing. In addition, there is a program that when executed by a computer for controlling the operation of the substrate liquid processing apparatus (plating processing apparatus 1), the computer controls the substrate liquid processing apparatus to execute the above-described substrate liquid processing method. The present invention may be embodied as a recorded recording medium (for example, the recording medium 31 of the control unit 3).
１　　　　　めっき処理装置
５　　　　　めっき処理部
１０　　　　カバーユニット
４０　　　　環状壁
５２　　　　基板保持部
５３　　　　めっき液供給部
６３　　　　ヒータ
Ｌ１　　　　めっき液
Ｓｗ　　　　処理面
Ｗ　　　　　基板 Reference Signs List 1 plating processing apparatus 5 plating processing unit 10 cover unit 40 annular wall 52 substrate holding unit 53 plating solution supply unit 63 heater L1 plating solution Sw treated surface W substrate

Claims (8)

  1. 　処理液によって基板の処理面の液処理を行う基板液処理装置であって、
    　前記基板を保持する基板保持部と、
    　前記基板保持部により保持された前記基板の前記処理面に前記処理液を供給する処理液供給部と、
    　ヒータを具備し、前記基板を内側に配置し且つ前記処理面を覆う下方位置に配置可能なカバーユニットと、
    　平面視において少なくとも一部が前記基板の外周部を取り囲むように設けられる環状壁と、を備え、
    　前記環状壁は、前記基板の外周部の周囲の空間に対する気体の流入及び流出のうち少なくともいずれかを抑制する基板液処理装置。     A substrate liquid processing apparatus for performing liquid processing on a processing surface of a substrate with a processing liquid, comprising:
    A substrate holding unit for holding the substrate;
    A processing liquid supply unit that supplies the processing liquid to the processing surface of the substrate held by the substrate holding unit;
    A cover unit which comprises a heater, can be disposed at a lower position where the substrate is disposed inside and which covers the processing surface;
    And an annular wall provided so as to surround at least a part of the periphery of the substrate in a plan view.
    The said annular wall is a substrate liquid processing apparatus which suppresses at least any one of inflow and outflow of the gas with respect to the space around the outer peripheral part of the said board | substrate.
  2. 　前記環状壁は、前記下方位置に配置された前記カバーユニットの下方に形成される気体流通空間に対応する位置に設けられ、前記気体流通空間を介した前記カバーユニットの内側と外側との間における気体の流通を抑制する請求項１に記載の基板液処理装置。 The annular wall is provided at a position corresponding to a gas circulation space formed below the cover unit disposed at the lower position, and between the inside and the outside of the cover unit via the gas circulation space. The substrate liquid processing apparatus according to claim 1, wherein the flow of gas is suppressed.
  3. 　前記基板の周囲に設けられる環状の液受けカップであって、前記基板から飛散した前記処理液を受け止める液受けカップを更に備え、
    　前記環状壁は、前記液受けカップの内側に設けられる請求項１又は２に記載の基板液処理装置。     An annular liquid receiving cup provided around the substrate, the liquid receiving cup further comprising a liquid receiving cup for receiving the processing liquid scattered from the substrate,
    The substrate liquid processing apparatus according to claim 1, wherein the annular wall is provided inside the liquid receiving cup.
  4. 　前記環状壁は、前記下方位置に配置された前記カバーユニットの内側に配置される請求項１～３のいずれか一項に記載の基板液処理装置。 The substrate liquid processing apparatus according to any one of claims 1 to 3, wherein the annular wall is disposed inside the cover unit disposed at the lower position.
  5. 　前記環状壁は、前記下方位置に配置された前記カバーユニットの外側に配置される請求項１～３のいずれか一項に記載の基板液処理装置。 The substrate liquid processing apparatus according to any one of claims 1 to 3, wherein the annular wall is disposed outside the cover unit disposed at the lower position.
  6. 　前記環状壁は、前記気体流通空間を少なくとも部分的に塞ぐ請求項２に記載の基板液処理装置。 The substrate liquid processing apparatus according to claim 2, wherein the annular wall at least partially closes the gas flow space.
  7. 　前記環状壁の一部は、前記下方位置に配置された前記カバーユニットの凹部の内側に配置される請求項６に記載の基板液処理装置。 The substrate liquid processing apparatus according to claim 6, wherein a part of the annular wall is disposed inside a recess of the cover unit disposed at the lower position.
  8. 　平面視において、前記環状壁の一部は前記基板の前記外周部と重なり、前記環状壁の他の部分は前記基板よりも外側に設けられる請求項１～７のいずれか一項に記載の基板液処理装置。 The substrate according to any one of claims 1 to 7, wherein in plan view, a part of the annular wall overlaps the outer peripheral portion of the substrate, and the other part of the annular wall is provided outside the substrate. Liquid treatment equipment.
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WO2021065589A1 (en) * 2019-10-02 2021-04-08 東京エレクトロン株式会社 Apparatus for treating substrate with solution, and method for treating substrate with solution

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JP2012084856A (en) * 2010-09-13 2012-04-26 Tokyo Electron Ltd Liquid processing apparatus, liquid processing method, and storage medium

Patent Citations (1)

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Cited By (3)

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Publication number Priority date Publication date Assignee Title
WO2021065589A1 (en) * 2019-10-02 2021-04-08 東京エレクトロン株式会社 Apparatus for treating substrate with solution, and method for treating substrate with solution
JPWO2021065589A1 (en) * 2019-10-02 2021-04-08
JP7326461B2 (en) 2019-10-02 2023-08-15 東京エレクトロン株式会社 SUBSTRATE LIQUID PROCESSING APPARATUS AND SUBSTRATE LIQUID PROCESSING METHOD

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