TW201931510A - Method and apparatus for contactlessly levitating a masking device - Google Patents

Method and apparatus for contactlessly levitating a masking device Download PDF

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TW201931510A
TW201931510A TW107133757A TW107133757A TW201931510A TW 201931510 A TW201931510 A TW 201931510A TW 107133757 A TW107133757 A TW 107133757A TW 107133757 A TW107133757 A TW 107133757A TW 201931510 A TW201931510 A TW 201931510A
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carrier
mask
magnetic levitation
mask assembly
magnetic
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TW107133757A
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蒂莫 阿德勒
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美商應用材料股份有限公司
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
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    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04Coating on selected surface areas, e.g. using masks
    • C23C16/042Coating on selected surface areas, e.g. using masks using masks
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02365Forming inorganic semiconducting materials on a substrate
    • H01L21/02612Formation types
    • H01L21/02617Deposition types
    • H01L21/02631Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67712Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrate being handled substantially vertically
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67751Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a single workpiece
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/68Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682Mask-wafer alignment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H10K71/233Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers by photolithographic etching

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Abstract

A contactless levitation method includes contactlessly levitating a mask assembly (200). The mask assembly includes a carrier (210) and a masking device (20) supported by the carrier. The method includes controlling a shape of the carrier while the mask assembly is contactlessly levitated.

Description

用以非接觸懸浮一遮蔽裝置之方法Method for non-contact suspension-shading device

此處所述之數個實施例是有關於一遮蔽裝置之非接觸懸浮,更特別是一種用以遮蔽一基板的遮蔽裝置。更特別是,此處所述之數個實施例係有關於數個遮蔽裝置之非接觸懸浮,此些遮蔽裝置係裝配,以用於在一垂直定向中遮蔽數個大面積基板。Several embodiments described herein relate to non-contact suspension of a screening device, and more particularly to a screening device for shielding a substrate. More particularly, the various embodiments described herein relate to non-contact suspension of a plurality of screening devices that are configured to shield a plurality of large-area substrates in a vertical orientation.

用以沈積材料於基板上的數種方法係已知。舉例來說,基板可利用蒸發製程進行塗佈,蒸發製程例如是物理氣相沈積(physical vapor deposition,PVD)製程、化學氣相沈積(chemical vapor deposition,CVD)製程、濺射製程、噴塗(spraying)製程等。製程可在沈積設備的處理腔室中執行,將塗佈之基板係位在處理腔室。沈積材料係提供於處理腔室中。數個材料例如是小分子、金屬、氧化物、氮化物及碳化物,可使用以沈積於基板上。再者,像是蝕刻、成型(structuring)、退火、或類似者之其他製程可在處理腔室中執行。Several methods for depositing materials on a substrate are known. For example, the substrate can be coated by an evaporation process such as a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, a sputtering process, or a spray coating (spraying). ) Process, etc. The process can be performed in a processing chamber of the deposition apparatus to tie the coated substrate to the processing chamber. A deposition material is provided in the processing chamber. Several materials are, for example, small molecules, metals, oxides, nitrides, and carbides that can be used to deposit on a substrate. Further, other processes such as etching, structuring, annealing, or the like can be performed in the processing chamber.

已塗佈之基板可使用於數種應用中及數種技術領域中。舉例來說,一種應用係在有機發光二極體(organic light emitting diode,OLED)面板之領域中。其他應用包括絕緣面板、例如是半導體裝置之微電子學、具有薄膜電晶體(TFT)之基板、彩色濾光片或類似者。The coated substrate can be used in several applications and in several technical fields. For example, one application is in the field of organic light emitting diode (OLED) panels. Other applications include insulating panels, such as microelectronics for semiconductor devices, substrates with thin film transistors (TFTs), color filters, or the like.

OLEDs係為固態裝置,由(有機)分子之薄膜所組成。在應用電的情況下,(有機)分子之薄膜係產生光。OLEDs可在電子裝置上提供明亮的顯示器,及比舉例為發光二極體(light-emitting diodes,LEDs)或液晶顯示器(liquid crystal displays,LCDs)使用較少的功率。在處理腔室中,有機分子係產生(舉例為蒸發、濺射、或噴塗等)及提供以在基板上凝結成薄膜。粒子係通過具有特定圖案的遮罩,以形成OLED圖案於基板上。OLEDs are solid-state devices consisting of thin films of (organic) molecules. In the case of application of electricity, the film of (organic) molecules produces light. OLEDs can provide bright displays on electronic devices and use less power than, for example, light-emitting diodes (LEDs) or liquid crystal displays (LCDs). In the processing chamber, organic molecules are produced (for example by evaporation, sputtering, or spraying, etc.) and provided to condense into a film on the substrate. The particles pass through a mask having a specific pattern to form an OLED pattern on the substrate.

為了減少沈積設備之佔地面積,存有允許在垂直定向中遮蔽基板之處理的沈積設備。也就是說,基板及遮罩係垂直配置在處理腔室中。遮罩準確地對準目標位置係有利的,因為未對準的遮罩可能導致沈積於基板上之層的品質劣化。舉例來說,為了提供具有非常小尺寸的圖案於基板上以舉例為製造OLED,遮蔽裝置之準確對準係有需求的。In order to reduce the footprint of the deposition apparatus, there is a deposition apparatus that allows processing of shielding the substrate in a vertical orientation. That is, the substrate and the mask are vertically disposed in the processing chamber. Accurate alignment of the mask to the target location is advantageous because misaligned masks can cause degradation of the quality of the layers deposited on the substrate. For example, in order to provide a pattern having a very small size on a substrate to exemplify the fabrication of an OLED, accurate alignment of the masking device is desirable.

有鑑於上述,可提供遮蔽裝置之改善對準的方法及設備係有需求的。In view of the above, methods and apparatus for providing improved alignment of the screening device are desirable.

根據一實施例,提出一種方法。此方法包括非接觸懸浮一遮罩組件。遮罩組件包括一載體及一遮蔽裝置,遮蔽裝置由載體支撐。此方法包括當遮罩組件係非接觸懸浮時,控制載體之一形狀。According to an embodiment, a method is presented. This method includes a non-contact suspension-mask assembly. The mask assembly includes a carrier and a shielding device supported by the carrier. The method includes controlling the shape of one of the carriers when the mask assembly is in non-contact suspension.

根據其他實施例,提出一種方法。此方法包括藉由第一組磁性懸浮力非接觸懸浮一第一遮罩組件。第一遮罩組件包括一第一載體及一第一遮蔽裝置,第一遮蔽裝置由第一載體支撐。此方法包括當第一遮罩組件由第一組磁性懸浮力非接觸懸浮時,測量第一遮蔽裝置之一對準。此方法包括計算一第二組磁性懸浮力。此方法包括藉由第二組磁性懸浮力非接觸懸浮一遮罩組件。遮罩組件包括一載體及一遮蔽裝置,遮蔽裝置由載體支撐。遮罩組件係為第一遮罩組件或一第二遮罩組件。第二組磁性懸浮力提供載體之一變形。According to other embodiments, a method is presented. The method includes non-contact suspension of a first mask assembly by a first set of magnetic levitation forces. The first mask assembly includes a first carrier and a first shielding device, and the first shielding device is supported by the first carrier. The method includes measuring one of the alignments of the first screening device when the first mask assembly is non-contact suspended by the first set of magnetic levitation forces. The method includes calculating a second set of magnetic levitation forces. The method includes non-contact suspension of a mask assembly by a second set of magnetic levitation forces. The mask assembly includes a carrier and a shielding device supported by the carrier. The mask assembly is a first mask assembly or a second mask assembly. The second set of magnetic levitation forces provides for deformation of one of the carriers.

根據其他實施例,提出一種設備。此設備包括一磁性懸浮系統,包括數個磁性單元。此設備一遮罩組件,包括一載體及一遮蔽裝置,遮蔽裝置由載體支撐。此設備包括一控制單元,連接於此些磁性單元。此設備係裝配,以用於在遮罩組件非接觸懸浮時控制載體之一形狀。為了對本發明之上述及其他方面有更佳的瞭解,下文特舉實施例,並配合所附圖式詳細說明如下:According to other embodiments, an apparatus is presented. The device includes a magnetic suspension system comprising a plurality of magnetic units. The device is a mask assembly comprising a carrier and a shielding device supported by the carrier. The device includes a control unit coupled to the magnetic units. This device is assembled for controlling the shape of one of the carriers when the mask assembly is in non-contact suspension. In order to better understand the above and other aspects of the present invention, the following detailed description of the embodiments and the accompanying drawings

詳細的參照現在將以數種實施例達成,數種實施例的一或多個例子係繪示於圖式中。在下方圖式之說明中,相同參考編號係意指相同的元件。一般來說,僅有有關於個別實施例之相異處係進行說明。各例子係藉由說明的方式提供且不意味為一限制。再者,所說明或敘述而做為一實施例之部份之特徵可用於其他實施例或與其他實施例結合,以取得再其他實施例。此意指本說明包括此些調整及變化。The detailed description will now be made in a number of embodiments, and one or more examples of several embodiments are illustrated in the drawings. In the description of the figures below, the same reference numerals are intended to refer to the same elements. In general, only the differences between the individual embodiments are described. The examples are provided by way of illustration and are not meant as a limitation. Furthermore, the features illustrated or described as part of one embodiment can be used in other embodiments or in combination with other embodiments to achieve further embodiments. This means that the description includes such adjustments and changes.

此處所述之數個實施例包含遮罩組件之非接觸懸浮。本揭露通篇所使用之名稱「非接觸」可理解為遮罩組件之重量係不由機械接觸或機械力支承,但由磁力支承的意義。特別是,遮罩組件可利用磁力取代機械力來支承於懸浮或浮動狀態中。於一些應用中,在系統中之遮罩組件的懸浮期間及舉例為對準期間,遮罩組件及設備之其餘部份之間可不存有任何機械接觸。Several embodiments described herein include non-contact suspension of the mask assembly. The term "non-contact" as used throughout this disclosure is understood to mean that the weight of the mask assembly is not supported by mechanical or mechanical forces, but is supported by magnetic forces. In particular, the mask assembly can be supported in a suspended or floating state by magnetic force instead of mechanical force. In some applications, there may be no mechanical contact between the mask assembly and the rest of the device during the suspension of the mask assembly in the system and during the exemplification of the alignment.

相較於用以在處理系統中導引遮罩組件之機械裝置,優點係非接觸懸浮不會面臨摩擦力而影響遮罩組件之定位及對準的線性度及/或精密度。遮罩組件之非接觸懸浮係提供遮罩組件之無摩擦移動,其中舉例為在沈積製程中遮罩組件相對於遮蔽裝置遮蔽之基板的位置可在具有高精密度下控制及維持。In contrast to mechanical devices used to guide the mask assembly in a processing system, the advantage is that the non-contact suspension does not face friction and affects the linearity and/or precision of the positioning and alignment of the mask assembly. The non-contact suspension of the mask assembly provides frictionless movement of the mask assembly, wherein the position of the substrate of the mask assembly relative to the shield during the deposition process can be controlled and maintained with high precision.

舉例來說,在沈積製程期間,遮罩組件之非接觸懸浮係有利的,沒有粒子係因遮罩組件及設備之部件之間的機械接觸產生,設備之部件例如是機械軌道。因此,非接觸懸浮係提供沈積改善純度及均勻性之層於基板上,特別是因為粒子產生係在使用非接觸懸浮時減到最少。For example, during the deposition process, the non-contact suspension of the mask assembly is advantageous, and no particles are produced by mechanical contact between the mask assembly and the components of the device, such as mechanical tracks. Thus, the non-contact suspension provides a layer of deposition that improves purity and uniformity on the substrate, particularly since particle generation is minimized when using non-contact suspension.

根據可與此處所述其他實施例結合之數個實施例,沈積或塗佈製程可為或包括熱蒸發製程、物理氣相沈積(PVD)製程、化學氣相沈積(CVD)製程及/或濺射製程。沈積源可提供而用於執行沈積製程。According to several embodiments, which may be combined with other embodiments described herein, the deposition or coating process may be or include a thermal evaporation process, a physical vapor deposition (PVD) process, a chemical vapor deposition (CVD) process, and/or Sputtering process. A deposition source can be provided for performing the deposition process.

於本揭露中,數個「實質上水平」方向之術語可包括彼此間形成達10度或甚至達15度之小角度的數個方向。數個「實質上垂直」方向之術語可包括彼此間形成小於90度之角度的數個方向,舉例為至少80度或至少75度。類似的考量係應用於實質上平行或垂直軸、平面、面積、定向或類似者之概念。In the present disclosure, a plurality of terms of "substantially horizontal" direction may include a plurality of directions that form a small angle of 10 degrees or even 15 degrees with each other. The terms "a substantially vertical" direction may include a plurality of directions that form an angle of less than 90 degrees with each other, for example at least 80 degrees or at least 75 degrees. Similar considerations apply to concepts that are substantially parallel or perpendicular to the axis, plane, area, orientation, or the like.

此處所述之一些實施例包含「實質上垂直」方向、平面、定向及類似者之概念。實質上垂直方向係視為一方向,實質上平行於沿著重力延伸之方向。實質上垂直方向可從準確垂直度(後者以重力定義)偏移舉例為達15度之角度。Some embodiments described herein include the concepts of "substantially perpendicular" directions, planes, orientations, and the like. The substantially vertical direction is considered to be a direction substantially parallel to the direction extending along the force of gravity. The substantially vertical direction can be offset from an accurate verticality (the latter defined by gravity) as an angle of up to 15 degrees.

此處所述之數個實施例可更包含「實質上水平」方向、平面、定向、及類似者之概念。實質上水平方向係理解為與實質上垂直方向有所區別。實質上水平方向可實質上垂直於由重力所定義之準確垂直方向。The various embodiments described herein may further encompass the concepts of "substantially horizontal" directions, planes, orientations, and the like. The substantially horizontal direction is understood to be different from the substantially vertical direction. The substantially horizontal direction may be substantially perpendicular to the exact vertical direction defined by gravity.

第1圖繪示用以製造OLEDs於基板10上之沈積製程的示意圖。FIG. 1 is a schematic view showing a deposition process for fabricating OLEDs on a substrate 10.

為了製造OLEDs,有機分子係藉由沈積源30(舉例為蒸發、濺射、噴塗等)產生,及沈積於基板10上。遮蔽裝置20係位於基板10及沈積源30之間。遮蔽裝置20可具有特定的圖案,舉例為由數個開孔或孔23提供之特定的圖案,使得有機分子(舉例為沿著路徑32)通過開孔及孔23,以沈積有機化合物層或膜於基板10上。利用不同的遮蔽裝置或相對於基板10之遮蔽裝置20之不同位置,數個層或膜可沈積於基板10上,以舉例為產生具有不同顏色特徵的像素。舉例來說,第一層或膜可沈積以產生紅色像素34,第二層或膜可沈積以產生綠色像素36,及第三層或膜可沈積以產生藍色像素38。層或膜舉例為有機半導體,可配置於兩個電極之間。此兩個電極例如是陽極及陰極(未繪示)。此兩個電極之至少一電極可為透明的。To produce OLEDs, organic molecules are produced by deposition source 30 (e.g., evaporation, sputtering, spraying, etc.) and deposited on substrate 10. The shielding device 20 is located between the substrate 10 and the deposition source 30. The screening device 20 can have a particular pattern, such as a particular pattern provided by a plurality of apertures or apertures 23, such that organic molecules (e.g., along path 32) pass through the apertures and apertures 23 to deposit an organic compound layer or film. On the substrate 10. A plurality of layers or films may be deposited on the substrate 10 using different masking means or different locations relative to the masking means 20 of the substrate 10, for example to produce pixels having different color characteristics. For example, a first layer or film can be deposited to produce red pixels 34, a second layer or film can be deposited to produce green pixels 36, and a third layer or film can be deposited to produce blue pixels 38. The layer or film is exemplified by an organic semiconductor and can be disposed between two electrodes. The two electrodes are, for example, an anode and a cathode (not shown). At least one of the electrodes of the two electrodes may be transparent.

在沈積製程期間,基板10及遮蔽裝置20可配置於實質上垂直定向中。在第1圖中,數個箭頭表示一個垂直方向40及兩個水平方向50及60。During the deposition process, the substrate 10 and the screening device 20 can be disposed in a substantially vertical orientation. In Fig. 1, several arrows indicate one vertical direction 40 and two horizontal directions 50 and 60.

根據可與此處所述其他實施例結合之數個實施例,遮蔽裝置20係裝配,以用於舉例為在沈積製程中遮蔽基板10。遮蔽裝置20可避免基板10之一或多個部份在沈積製程中進行塗佈。在沈積期間,沈積材料係朝向基板10射出。遮蔽裝置可配置而使得朝向基板10射出之沈積材料之部份係衝擊於遮蔽裝置20上,以避免基板10之一部份進行塗佈。According to several embodiments, which can be combined with other embodiments described herein, the screening device 20 is assembled for example to shield the substrate 10 during the deposition process. The screening device 20 prevents one or more portions of the substrate 10 from being coated during the deposition process. The deposition material is emitted toward the substrate 10 during deposition. The screening means can be configured such that portions of the deposited material emerging toward the substrate 10 impinge on the screening means 20 to avoid coating a portion of the substrate 10.

根據可與此處所述其他實施例結合之數個實施例,遮蔽裝置20可包括數個開孔。此些開孔可裝配,以用於讓沈積材料通過遮蔽裝置20及沈積於由遮蔽裝置20遮蔽之基板10上。此些開孔可定義一圖案。According to several embodiments, which can be combined with other embodiments described herein, the screening device 20 can include a plurality of apertures. The openings are configurable for passing the deposited material through the screening device 20 and onto the substrate 10 that is shielded by the screening device 20. These openings define a pattern.

根據可與此處所述其他實施例結合之數個實施例,遮蔽裝置20可為撓性遮蔽裝置。遮蔽裝置20可具有類似於箔或板之機械性質。遮蔽裝置20可為或包括遮蔽材料之板。根據此處所述之數個實施例,遮蔽裝置20可由遮罩支撐件支撐,遮罩支撐件舉例為遮罩框架。According to several embodiments, which can be combined with other embodiments described herein, the screening device 20 can be a flexible screening device. The screening device 20 can have mechanical properties similar to a foil or plate. The screening device 20 can be or include a panel of masking material. According to several embodiments described herein, the screening arrangement 20 can be supported by a mask support, such as a mask frame.

根據可與此處所述其他實施例結合之數個實施例,遮蔽裝置20可裝配以用於遮蔽大面積基板。According to several embodiments, which can be combined with other embodiments described herein, the screening device 20 can be configured to shield a large area substrate.

第2圖繪示根據此處所述實施例之遮罩組件200的示意圖。遮罩組件200包括載體210。遮罩組件200包括遮蔽裝置20,遮蔽裝置20由載體210支撐。第2圖中所示之遮罩組件200係實質上水平定向。2 is a schematic diagram of a mask assembly 200 in accordance with embodiments described herein. The mask assembly 200 includes a carrier 210. The mask assembly 200 includes a screening device 20 that is supported by a carrier 210. The mask assembly 200 shown in Figure 2 is oriented substantially horizontally.

根據可與此處所述其他實施例結合之數個實施例,載體210可為適用於運載或支撐遮蔽裝置20的載體。載體210可定義一平面。According to several embodiments, which may be combined with other embodiments described herein, the carrier 210 may be a carrier suitable for carrying or supporting the screening device 20. Carrier 210 can define a plane.

繪示於第2圖中之載體210係為未變形狀態。舉例來說,載體210可為在載體210的水平定向中設置在平面支撐件上的載體210。沒有作用以改變載體210之形狀的力係供應於載體210。未變形之載體的周圍可包括實質上直邊緣,如第2圖中所示。繪示於第2圖中之遮蔽裝置20係為未變形狀態。未變形之遮蔽裝置20可具有矩形之形狀。未變形的遮蔽裝置的周圍可包括實質上直邊緣,如第2圖中所示。The carrier 210 shown in Fig. 2 is in an undeformed state. For example, the carrier 210 can be a carrier 210 that is disposed on a planar support in a horizontal orientation of the carrier 210. A force that does not act to change the shape of the carrier 210 is supplied to the carrier 210. The periphery of the undeformed carrier can include substantially straight edges, as shown in Figure 2. The shielding device 20 shown in Fig. 2 is in an undeformed state. The undeformed screening device 20 can have a rectangular shape. The perimeter of the undeformed screening device can include substantially straight edges, as shown in FIG.

根據可與此處所述其他實施例結合之數個實施例,遮罩組件200可包括遮罩支撐件。第3圖繪示出遮罩組件200,遮罩組件200包括遮罩支撐件310。在第3圖中所示之範例實施例中,遮罩支撐件310係為遮罩框架。遮蔽裝置20舉例為撓性遮蔽裝置,由遮罩支撐件310支撐。遮蔽裝置20係連接於遮罩支撐件310,舉例為藉由點焊接連接於遮罩支撐件310。遮罩支撐件310係貼附於載體210,舉例為藉由一或多個緊固件來貼附於載體210。此一或多個緊固件例如是螺絲或螺栓。繪示於第3圖中之遮罩組件200係設置於實質上水平定向中。第3圖中所示之載體210、遮罩支撐件310及遮蔽裝置20係為未變形狀態。未變形之遮罩支撐件的周圍可包括實質上直邊緣,如第3圖中所示。遮罩支撐件舉例為遮罩框架。According to several embodiments, which can be combined with other embodiments described herein, the mask assembly 200 can include a mask support. FIG. 3 depicts the mask assembly 200, which includes a mask support 310. In the exemplary embodiment shown in FIG. 3, the mask support 310 is a mask frame. The screening device 20 is exemplified by a flexible shielding device supported by a mask support 310. The screening device 20 is attached to the mask support 310, for example by spot welding to the mask support 310. The mask support 310 is attached to the carrier 210, for example by being attached to the carrier 210 by one or more fasteners. The one or more fasteners are for example screws or bolts. The mask assembly 200, shown in Figure 3, is disposed in a substantially horizontal orientation. The carrier 210, the mask support 310, and the shielding device 20 shown in Fig. 3 are in an undeformed state. The perimeter of the undeformed mask support can include substantially straight edges, as shown in FIG. The mask support is exemplified by a mask frame.

遮罩組件之部件可彼此連接,以組設遮罩組件。遮罩組件之部件舉例為載體210、遮蔽裝置20及/或遮罩支撐件310。遮罩組件200之組設可在遮罩組件200之實質上水平定向中執行。在組設遮罩組件200之後,遮罩組件200可設置在實質上垂直定向中,舉例為用於接續之塗佈製程。在組設遮罩組件200之前、期間或之後,基板可相對於遮罩組件200或遮蔽裝置20定位及/或固定。其他裝置例如是載體、基板框架及基板支承配置之至少一者,可設置及使用於定位及固定基板。The components of the mask assembly can be connected to one another to assemble the mask assembly. The components of the mask assembly are exemplified by the carrier 210, the screening device 20 and/or the mask support 310. The assembly of the mask assembly 200 can be performed in a substantially horizontal orientation of the mask assembly 200. After the mask assembly 200 is assembled, the mask assembly 200 can be disposed in a substantially vertical orientation, such as for a subsequent coating process. The substrate can be positioned and/or fixed relative to the mask assembly 200 or the screening device 20 before, during, or after the mask assembly 200 is assembled. Other devices, such as at least one of a carrier, a substrate frame, and a substrate support arrangement, can be provided and used to position and secure the substrate.

第4圖繪示根據此處所述實施例之包括載體210及遮蔽裝置20之遮罩組件200的示意圖。遮罩組件200係設置於實質上垂直定向中。根據此處所述之數個實施例,遮罩組件200可包括遮罩支撐件(未繪示)。舉例來說,遮蔽裝置20可為連接於遮罩框架之撓性遮蔽裝置。4 is a schematic diagram of a mask assembly 200 including a carrier 210 and a screening device 20 in accordance with embodiments described herein. The mask assembly 200 is disposed in a substantially vertical orientation. According to several embodiments described herein, the mask assembly 200 can include a mask support (not shown). For example, the screening device 20 can be a flexible screening device attached to the mask frame.

繪示於第4圖中之實質上垂直定向的遮蔽裝置20係為變形狀態。繪示於第4圖中之遮蔽裝置20的形狀係不同於未變形之遮蔽裝置的形狀,未變形之遮蔽裝置舉例為繪示於第3圖中之遮蔽裝置20。藉由遮蔽裝置20之上及下邊緣的彎曲形狀,遮蔽裝置20之變形狀態係代表性繪示於第4圖中。遮蔽裝置20的變形可因作用於例如是遮蔽裝置或遮罩支撐件的遮罩組件之部件上的重力所導致。重力由箭頭450所示。變形之遮蔽裝置20可包括至少一彎曲邊緣,舉例為彎曲的水平邊緣。The substantially vertically oriented screening device 20, shown in Figure 4, is in a deformed state. The shape of the shielding device 20 shown in Fig. 4 is different from the shape of the undeformed shielding device, and the undeformed shielding device is exemplified by the shielding device 20 shown in Fig. 3. The deformation state of the shielding device 20 is representatively shown in Fig. 4 by the curved shape of the upper and lower edges of the shielding device 20. The deformation of the screening device 20 can be caused by gravity acting on components of the mask assembly, such as the screening device or the mask support. Gravity is indicated by arrow 450. The deformed screening device 20 can include at least one curved edge, such as a curved horizontal edge.

遮蔽裝置之變形可因遮蔽裝置連接於遮罩支撐件所導致,遮罩支撐件舉例為遮罩框架。第5圖繪示出根據此處所述實施例之遮罩組件200。遮罩組件200係設置在實質上垂直定向中。遮罩組件200包括遮罩框架510。遮罩框架510係藉由緊固件連接於載體210,緊固件例如是螺絲。兩個緊固件515係繪示於第5圖中。其他緊固件可設置。遮罩組件200包括遮蔽裝置20(未繪示於第5圖中),連接於遮罩框架510。遮罩框架510可具有一或多個框架元件,例如是第一框架元件522、第二框架元件524、第三框架元件526及第四框架元件528。The deformation of the screening device can be caused by the attachment of the shielding device to the mask support, which is exemplified by a mask frame. FIG. 5 depicts the mask assembly 200 in accordance with embodiments described herein. The mask assembly 200 is disposed in a substantially vertical orientation. The mask assembly 200 includes a mask frame 510. The mask frame 510 is attached to the carrier 210 by fasteners such as screws. Two fasteners 515 are shown in Figure 5. Other fasteners can be set. The mask assembly 200 includes a shielding device 20 (not shown in FIG. 5) that is coupled to the mask frame 510. The mask frame 510 can have one or more frame elements, such as a first frame element 522, a second frame element 524, a third frame element 526, and a fourth frame element 528.

重力作用於遮罩組件200上及可能致使遮罩框架510及/或遮蔽裝置20之至少一部份變形,舉例為彎曲。重力可特別是致使水平定向之框架元件變形,舉例為彎曲。水平定向之框架元件例如是第一框架元件522及第二框架元件524(以實線繪示)。遮罩框架510之未變形形狀係利用虛線繪示於第5圖中。繪示於第5圖中之遮蔽裝置20係變形。遮蔽裝置20可因遮蔽裝置20連接於遮罩框架510而變形。Gravity acts on the mask assembly 200 and may cause at least a portion of the mask frame 510 and/or the screening device 20 to be deformed, such as by bending. Gravity can in particular cause deformation of the horizontally oriented frame element, for example by bending. The horizontally oriented frame members are, for example, a first frame member 522 and a second frame member 524 (shown in solid lines). The undeformed shape of the mask frame 510 is shown in Figure 5 by a dashed line. The shielding device 20 shown in Fig. 5 is deformed. The screening device 20 can be deformed by the shielding device 20 being attached to the mask frame 510.

繪示於圖式中的變形之遮蔽裝置及變形之遮罩框架係以示意的方式繪示。變形之遮蔽裝置可具有不同於第4圖中所示之形狀的形狀。變形之遮罩框架可具有不同於第5圖中所示之形狀的形狀。The masking device and the deformed mask frame shown in the drawings are shown in schematic form. The deformed shielding device may have a shape different from the shape shown in Fig. 4. The deformed mask frame may have a shape different from the shape shown in FIG.

舉例來說,可存在張力。張力可能影響遮罩框架及/或遮蔽裝置的形狀。舉例為在沈積製程期間,張力可提供以處理遮罩的熱膨脹。如果存在足夠的張力時,溫度增加係僅改變遮罩張力,而非像素位置。For example, tension can exist. Tension may affect the shape of the mask frame and/or the screening device. For example, during the deposition process, tension can be provided to handle the thermal expansion of the mask. If there is enough tension, the temperature increase only changes the mask tension, not the pixel position.

遮蔽裝置20的變形可能致使遮蔽裝置20相對於基板之未對準。沈積層之品質及/或對準可能劣化。舉例來說,針對貼附於遮罩框架之撓性遮罩來說,因遮罩框架之變形所導致的遮蔽元件之未對準可具有與遮蔽裝置所提供之基板上的結構的尺寸可比較之一個數量級。舉例來說,在遮罩具有約50微米之裝置厚度來說,遮罩定位精密度可為約2微米,及遮蔽裝置之垂直變形可為約至少2.5微米。Deformation of the screening device 20 may cause misalignment of the screening device 20 relative to the substrate. The quality and/or alignment of the deposited layer may be degraded. For example, for a flexible mask attached to a mask frame, the misalignment of the shielding elements due to deformation of the mask frame can be comparable to the size of the structure on the substrate provided by the screening device. An order of magnitude. For example, in the case of a mask having a device thickness of about 50 microns, the mask positioning precision can be about 2 microns, and the vertical deformation of the masking device can be about at least 2.5 microns.

第6圖繪示根據此處所述實施例之方法的示意圖。Figure 6 is a schematic illustration of a method in accordance with embodiments described herein.

第6圖繪示出數個磁性單元610。此些磁性單元610之個別的磁性單元係以參考編號615表示。此些磁性單元610提供數個磁性懸浮力620。此些磁性懸浮力620之個別的磁性懸浮力係以參考編號625表示。此些磁性懸浮力620之各磁性懸浮力625係在實質上垂直方向中延伸,實質上垂直方向舉例為第二方向694。Figure 6 depicts several magnetic units 610. The individual magnetic units of such magnetic units 610 are indicated by reference numeral 615. Such magnetic units 610 provide a plurality of magnetic levitation forces 620. The individual magnetic levitation forces of such magnetic levitation forces 620 are indicated by reference numeral 625. Each of the magnetic levitation forces 625 of the magnetic levitation forces 620 extends in a substantially vertical direction, and the substantially vertical direction is exemplified by the second direction 694.

第6圖繪示出第一方向692。第一方向可為實質上水平方向。第6圖繪示出第二方向694。第二方向694可為實質上垂直方向。Figure 6 depicts a first direction 692. The first direction can be a substantially horizontal direction. Figure 6 depicts a second direction 694. The second direction 694 can be a substantially vertical direction.

第6圖繪示出遮罩組件200,遮罩組件200包括載體210及遮蔽裝置20,遮蔽裝置20由載體210支撐。此些磁性懸浮力620作用於遮罩組件200上。遮罩組件200係藉由此些磁性懸浮力620非接觸懸浮。FIG. 6 illustrates a mask assembly 200 that includes a carrier 210 and a screening device 20 that is supported by a carrier 210. These magnetic levitation forces 620 act on the mask assembly 200. The mask assembly 200 is non-contact suspended by the magnetic suspension force 620.

根據可與此處所述其他實施例結合之數個實施例,當遮罩組件200舉例為藉由此些磁性懸浮力620非接觸懸浮時,載體210具有實質上垂直定向。According to several embodiments, which can be combined with other embodiments described herein, when the mask assembly 200 is exemplified by non-contact suspension by such magnetic levitation forces 620, the carrier 210 has a substantially vertical orientation.

在藉由此些磁性懸浮力620非接觸懸浮遮罩組件200期間,載體210係變形。相較於未變形之載體,非接觸懸浮之載體具有不同的形狀。During the non-contact suspension of the mask assembly 200 by such magnetic levitation forces 620, the carrier 210 is deformed. The non-contact suspended carrier has a different shape than the undeformed carrier.

根據可與此處所述其他實施例結合之數個實施例,載體210之變形可藉由此些磁性懸浮力620提供。舉例為藉由根據此處所述之控制單元,此些磁性懸浮力的大小可控制,以提供載體210之目標變形。According to several embodiments, which may be combined with other embodiments described herein, the deformation of the carrier 210 may be provided by such magnetic levitation forces 620. By way of example, the magnitude of such magnetic levitation forces can be controlled by the control unit described herein to provide targeted deformation of the carrier 210.

此些磁性懸浮力620之二或多個磁性懸浮力可具有不同的大小。在第6圖中,磁性懸浮力之不同大小係藉由具有不同長度之向上箭頭所表示。具有不同大小的磁性懸浮力可提供載體210之變形。在第6圖中,變形的載體210包括彎曲之上邊緣630。Two or more of the magnetic levitation forces 620 may have different sizes. In Fig. 6, the different sizes of the magnetic levitation forces are indicated by upward arrows having different lengths. Magnetic suspension forces of different sizes can provide deformation of the carrier 210. In FIG. 6, the deformed carrier 210 includes a curved upper edge 630.

載體210的變形可提供,以對準由載體210支撐之遮蔽裝置20。遮蔽裝置20係機械地耦接於載體210而使得遮蔽裝置20之形狀、位置及/或對準可藉由變形載體210來調整及/或控制。A deformation of the carrier 210 can be provided to align the screening device 20 supported by the carrier 210. The screening device 20 is mechanically coupled to the carrier 210 such that the shape, position and/or alignment of the screening device 20 can be adjusted and/or controlled by the deformation carrier 210.

舉例來說,遮蔽裝置可貼附於遮罩支撐件(未繪示於第6圖中),遮罩支撐件舉例為根據此處所述數個實施例之遮罩框架。遮罩支撐件可貼附於載體210。藉由變形載體210,連接於載體210之遮罩支撐件的形狀、位置及/或對準可調整及/或控制。遮蔽裝置連接於遮罩支撐件係提供遮蔽裝置之對準。For example, the screening device can be attached to a mask support (not shown in Figure 6), which is exemplified by a mask frame in accordance with several embodiments described herein. The mask support can be attached to the carrier 210. By deforming the carrier 210, the shape, position and/or alignment of the mask support attached to the carrier 210 can be adjusted and/or controlled. The attachment of the screening device to the mask support provides alignment of the screening device.

在第6圖中,非接觸懸浮之遮罩組件200的遮蔽裝置20係在良好對準之位置。繪示於第6圖中之遮蔽裝置20具有矩形形狀。遮蔽裝置20係實質上未變形。遮蔽裝置20之上邊緣640係直的。上邊緣640係對準於參考軸642,參考軸642定義遮蔽裝置20之目標對準。遮蔽裝置20之下邊緣650係直的。下邊緣650係對準於參考軸652,參考軸652定義遮蔽裝置20之目標對準。遮蔽裝置20之良好對準的位置係藉由載體210的變形提供。載體210之變形係由此些磁性懸浮力620提供。In Fig. 6, the screening device 20 of the non-contact suspended mask assembly 200 is in a well aligned position. The screening device 20 shown in Fig. 6 has a rectangular shape. The screening device 20 is substantially undeformed. The upper edge 640 of the screening device 20 is straight. The upper edge 640 is aligned with the reference axis 642, which defines the target alignment of the screening device 20. The lower edge 650 of the screening device 20 is straight. The lower edge 650 is aligned with the reference axis 652, which defines the target alignment of the screening device 20. The well-aligned position of the screening device 20 is provided by the deformation of the carrier 210. The deformation of the carrier 210 is provided by these magnetic levitation forces 620.

有鑑於上述,提供一種方法。此方法包括非接觸懸浮遮罩組件200。遮罩組件200可舉例為藉由此些磁性懸浮力620非接觸懸浮。此些磁性懸浮力620可藉由數個磁性單元610提供。遮罩組件包括載體210及遮蔽裝置20,遮蔽裝置20係藉由載體支撐。遮蔽裝置20可適用於遮蔽基板。此方法包括在遮罩組件非接觸懸浮時控制載體的形狀。In view of the above, a method is provided. This method includes a non-contact suspension mask assembly 200. The mask assembly 200 can be exemplified by non-contact suspension by such magnetic levitation forces 620. Such magnetic levitation forces 620 can be provided by a plurality of magnetic units 610. The mask assembly includes a carrier 210 and a screening device 20 supported by a carrier. The screening device 20 can be adapted to shield the substrate. The method includes controlling the shape of the carrier when the mask assembly is in non-contact suspension.

藉由控制載體210的形狀,此處所述之數個實施例係提供遮蔽裝置20之對準。遮蔽裝置20之未對準可補償或校正。By controlling the shape of the carrier 210, several embodiments described herein provide for alignment of the screening device 20. The misalignment of the screening device 20 can be compensated or corrected.

可藉由根據此處所述之數個實施例校正的非對準可能源自於遮蔽裝置20及/或遮罩支撐件310之變形。遮罩支撐件310舉例為遮罩框架510,遮罩框架510支撐遮蔽裝置20。舉例來說,垂直定向之遮蔽裝置20可在非接觸懸浮期間變形,因為遮蔽裝置20係連接於遮罩框架,而遮罩框架可能在作用於遮罩框架上之重力的影響下彎曲。根據此處所述之數個實施例的方法係對遮罩支撐件之變形提供補償。良好對準的遮蔽裝置20可藉由控制載體之形狀提供。控制載體210之形狀可包括舉例為變形載體210,以補償遮罩支撐件及/或遮蔽裝置之變形。良好對準的遮蔽裝置20具有優點,沈積於基板上之改善品質的層可提供。The misalignment that may be corrected by the various embodiments described herein may result from deformation of the screening device 20 and/or the mask support 310. The mask support 310 is exemplified by a mask frame 510 that supports the screening device 20. For example, the vertically oriented screening device 20 can be deformed during non-contact suspension because the screening device 20 is attached to the mask frame and the mask frame can be bent under the influence of gravity acting on the mask frame. The method according to several embodiments described herein provides compensation for deformation of the mask support. A well aligned screening device 20 can be provided by controlling the shape of the carrier. The shape of the control carrier 210 can include, for example, a deformed carrier 210 to compensate for deformation of the mask support and/or the screening device. A well-aligned screening device 20 has the advantage that an improved quality layer deposited on the substrate can be provided.

根據可與此處所述其他實施例結合之數個實施例,遮罩組件200可藉由數個磁性懸浮力620非接觸懸浮。載體之形狀可藉由控制此些磁性懸浮力620來控制。載體210之形狀可藉由控制作用於載體上之此些磁性懸浮力620的大小來控制。載體210之形狀可以非接觸方式控制。舉例來說,載體的變形可以非接觸方式提供。無需例如是舉例為致動器之機械部件來控制載體210的形狀。According to several embodiments, which can be combined with other embodiments described herein, the mask assembly 200 can be non-contact suspended by a plurality of magnetic levitation forces 620. The shape of the carrier can be controlled by controlling such magnetic levitation forces 620. The shape of the carrier 210 can be controlled by controlling the magnitude of such magnetic levitation forces 620 acting on the carrier. The shape of the carrier 210 can be controlled in a non-contact manner. For example, the deformation of the carrier can be provided in a non-contact manner. The shape of the carrier 210 need not be controlled, for example, as a mechanical component of the actuator.

根據可與此處所述其他實施例結合之數個實施例,載體的形狀可藉由非接觸力專門地控制,非接觸力舉例為磁性懸浮力。載體210的變形可由非接觸力專門地提供。載體210之變形可為非接觸變形。According to several embodiments, which can be combined with other embodiments described herein, the shape of the carrier can be specifically controlled by non-contact forces, exemplified by magnetic levitation forces. The deformation of the carrier 210 can be provided exclusively by non-contact forces. The deformation of the carrier 210 can be non-contact deformation.

載體之形狀的非接觸控制具有優點,粒子的產生可避免,使得沈積於基板上之層的品質及純度係改善。The non-contact control of the shape of the carrier has the advantage that the generation of particles can be avoided, so that the quality and purity of the layer deposited on the substrate is improved.

再者,由此些磁性懸浮力620提供之載體210的變形可藉由合適地裝配及控制此些磁性單元610提供。無需額外的元件或裝置來提供變形,而具有提供簡單的設備及可節省時間、能量成本及其他資源的優點。額外的元件或裝置舉例為用以變形載體210之機械致動器。Moreover, the deformation of the carrier 210 provided by such magnetic levitation forces 620 can be provided by suitably assembling and controlling such magnetic units 610. No additional components or devices are required to provide the distortion, but have the advantage of providing simple equipment and saving time, energy costs and other resources. Additional components or devices are exemplified by mechanical actuators for deforming the carrier 210.

根據可與此處所述其他實施例結合之數個實施例,控制載體210之形狀可包括提供載體210之變形。According to several embodiments, which may be combined with other embodiments described herein, controlling the shape of the carrier 210 may include providing a deformation of the carrier 210.

變形之載體210具有一形狀,不同於在載體210為未變形狀態的情況中之載體210的形狀。變形之載體210舉例為藉由此些磁性懸浮力620變形的載體210。磁性懸浮力可作用於載體210上,以改變載體210的形狀。在變形狀態中的載體210可包括 具有彎曲之形狀的至少一邊緣。特別是,變形之載體的水平邊緣舉例為第6圖中所示之上邊緣630,可具有彎曲之形狀。如果載體係為未變形狀態時,所討論之邊緣可為直的。舉例來說,第4圖繪示為未變形狀態的載體210,其中上邊緣630係直的。The deformed carrier 210 has a shape different from the shape of the carrier 210 in the case where the carrier 210 is in an undeformed state. The deformed carrier 210 is exemplified by a carrier 210 that is deformed by the magnetic levitation force 620. A magnetic levitation force can act on the carrier 210 to change the shape of the carrier 210. The carrier 210 in the deformed state may include at least one edge having a curved shape. In particular, the horizontal edge of the deformed carrier is exemplified by the upper edge 630 shown in Fig. 6, which may have a curved shape. If the carrier is in an undeformed state, the edge in question can be straight. For example, Figure 4 depicts the carrier 210 in an undeformed state with the upper edge 630 straight.

根據可與此處所述其他實施例結合之數個實施例,此些磁性懸浮力620所提供之載體210的變形以對準遮蔽裝置20可為載體210之目標變形。舉例為藉由控制單元1010,此些磁性懸浮力可控制,特別是此些磁性懸浮力的大小可控制,以提供載體210之變形。According to several embodiments, which may be combined with other embodiments described herein, the deformation of the carrier 210 provided by such magnetic levitation forces 620 to align the shielding device 20 may be a target deformation of the carrier 210. For example, by the control unit 1010, the magnetic levitation forces can be controlled, and in particular, the magnitude of the magnetic levitation forces can be controlled to provide deformation of the carrier 210.

於一些應用中,控制載體210之形狀可包括在載體210非接觸懸浮時維持載體210於實質上未變形狀態中。在此情況中,可提供沒有變形之非接觸懸浮的載體。舉例來說,藉由維持載體於未變形狀態中,載體的上邊緣可在非接觸懸浮期間保持實質上直的。遮蔽裝置20可裝配,使得遮蔽裝置20係在非接觸懸浮之載體維持在實質上未變形狀態中時良好的對準。In some applications, controlling the shape of the carrier 210 can include maintaining the carrier 210 in a substantially undeformed state when the carrier 210 is in non-contact suspension. In this case, a non-contact suspended suspension carrier can be provided. For example, by maintaining the carrier in an undeformed state, the upper edge of the carrier can remain substantially straight during non-contact suspension. The screening device 20 can be assembled such that the screening device 20 is in good alignment when the non-contact suspended carrier is maintained in a substantially undeformed state.

根據此處所述之數個實施例,載體之形狀可控制,以對準遮蔽裝置。舉例來說,載體210之變形可提供以對準遮蔽裝置20。According to several embodiments described herein, the shape of the carrier can be controlled to align the screening device. For example, a deformation of the carrier 210 can be provided to align the screening device 20.

根據此處所述之數個實施例之遮蔽裝置20的對準可為遮蔽裝置20之形狀的對準。載體210的形狀可控制,以對準遮蔽裝置之形狀於目標形狀。舉例來說,藉由變形載體210,遮蔽裝置20之形狀可控制,使得遮蔽裝置20可變為未變形形狀,舉例為實質上矩形之形狀。對準遮蔽裝置20可包括控制遮蔽裝置的形狀,使得舉例為水平邊緣之遮蔽裝置的至少一邊緣係實質上直的。The alignment of the screening device 20 according to several embodiments described herein may be the alignment of the shape of the screening device 20. The shape of the carrier 210 can be controlled to align the shape of the shielding device to the target shape. For example, by deforming the carrier 210, the shape of the screening device 20 can be controlled such that the screening device 20 can be deformed into an undeformed shape, such as a substantially rectangular shape. Aligning the screening device 20 can include controlling the shape of the screening device such that at least one edge of the screening device, such as a horizontal edge, is substantially straight.

此處所述之包含影響及/或控制遮蔽裝置20之形狀的遮蔽裝置20之對準係不同於遮蔽裝置之位置或定向只藉由平移或旋轉遮蔽裝置改變之遮蔽裝置20的對準,而無需影響遮蔽裝置之形狀。舉例來說,僅遮蔽裝置20之垂直位置進行調整之遮蔽裝置20的對準不可用以控制遮蔽裝置20的形狀。The alignment of the screening device 20 described herein that affects and/or controls the shape of the screening device 20 is different from the alignment of the shielding device 20 that is only changed by the translation or rotation of the shielding device. There is no need to affect the shape of the screening device. For example, the alignment of the screening device 20, which only adjusts the vertical position of the screening device 20, cannot be used to control the shape of the screening device 20.

根據可與此處所述其他實施例結合之數個實施例,載體210的形狀可控制,以對準遮蔽裝置20之一邊緣於實質上水平方向。遮蔽裝置20之此邊緣舉例為第6圖中所示之上邊緣640。實質上水平方向舉例為第一方向692。舉例來說,載體210的變形可提供,以對準遮蔽裝置之邊緣於實質上水平方向。According to several embodiments, which can be combined with other embodiments described herein, the shape of the carrier 210 can be controlled to align one of the edges of the screening device 20 in a substantially horizontal direction. This edge of the screening device 20 is exemplified by the upper edge 640 shown in FIG. The substantially horizontal direction is exemplified by the first direction 692. For example, a deformation of the carrier 210 can be provided to align the edges of the screening device in a substantially horizontal direction.

第7圖繪示根據此處所述實施例之對準遮蔽裝置20之方法的示意圖。第7圖繪示出遮罩組件200。遮罩組件200包括遮罩框架510。遮蔽裝置20連接於遮罩框架510。遮罩框架510連接於載體210。由此些磁性懸浮力620提供之載體210的變形係補償遮罩框架510之變形。當遮罩組件200係由此些磁性懸浮力620懸浮時,遮罩框架及遮蔽裝置係在實質上未變形狀態中。載體210之變形係提供遮罩框架510的對準。舉例來說,藉由提供載體210之變形,第一框架元件522及第二框架元件524可分別良好地對準於水平之參考軸742及752。第一框架元件522及第二框架元件542的彎曲可藉由載體210之變形補償。當遮罩組件200由此些磁性懸浮力620懸浮時,連接於遮罩框架510之遮蔽裝置20係良好的對準。FIG. 7 is a schematic illustration of a method of aligning the screening device 20 in accordance with embodiments described herein. FIG. 7 depicts the mask assembly 200. The mask assembly 200 includes a mask frame 510. The screening device 20 is coupled to the mask frame 510. The mask frame 510 is coupled to the carrier 210. The deformation of the carrier 210 provided by the magnetic levitation forces 620 compensates for the deformation of the mask frame 510. When the mask assembly 200 is suspended by the magnetic levitation forces 620, the mask frame and the screening device are in a substantially undeformed state. The deformation of the carrier 210 provides alignment of the mask frame 510. For example, by providing a deformation of the carrier 210, the first frame member 522 and the second frame member 524 can be well aligned with the horizontal reference axes 742 and 752, respectively. The bending of the first frame member 522 and the second frame member 542 can be compensated for by the deformation of the carrier 210. When the mask assembly 200 is suspended by the magnetic levitation forces 620, the shielding device 20 attached to the mask frame 510 is in good alignment.

根據可與此處所述其他實施例結合之數個實施例,遮罩組件200可包括遮罩支撐件310。遮蔽裝置20可連接於遮罩支撐件。遮罩支撐件310可連接於載體210。The mask assembly 200 can include a mask support 310 in accordance with several embodiments that can be combined with other embodiments described herein. The screening device 20 can be coupled to the mask support. The mask support 310 can be coupled to the carrier 210.

遮蔽裝置20可由遮罩支撐件310支撐及/或貼附於遮罩支撐件310。遮罩支撐件310可為剛性遮罩支撐件,舉例為用以支撐撓性遮蔽裝置。The screening device 20 can be supported by the mask support 310 and/or attached to the mask support 310. The mask support 310 can be a rigid mask support, for example to support a flexible shelter.

遮罩支撐件310可定義一平面。由遮罩支撐件310支撐的遮蔽裝置20可定義一平面。由遮罩支撐件310支撐的遮蔽裝置20所定義的平面、由遮罩支撐件310所定義的平面及/或由支撐遮蔽裝置20的載體所定義的平面可為彼此平行或實質上彼此平行。The mask support 310 can define a plane. The screening device 20 supported by the mask support 310 can define a plane. The plane defined by the screening device 20 supported by the mask support 310, the plane defined by the mask support 310, and/or the plane defined by the carrier supporting the screening device 20 may be parallel or substantially parallel to each other.

遮罩支撐件310可為遮罩框架510。遮罩框架510可定義窗口或開孔。窗口或開孔之面積可為從60%至100%之遮蔽裝置20的面積,遮蔽裝置20由遮罩框架510所支撐。遮蔽裝置20可在遮蔽裝置20之二或多個周邊部份貼附於在遮罩支撐件310,遮罩支撐件310舉例為遮罩框架。The mask support 310 can be a mask frame 510. The mask frame 510 can define a window or aperture. The area of the window or opening may be from 60% to 100% of the area of the screening device 20, and the screening device 20 is supported by the mask frame 510. The screening device 20 can be attached to the mask support 310 at two or more peripheral portions of the screening device 20, and the mask support 310 is exemplified as a mask frame.

遮罩框架510可包括一或多個框架元件。由遮罩框架510所定義的窗口可由此一或多個框架元件所圍繞。遮罩框架之框架元件可為棒形。遮罩框架510可包括第一框架元件522。遮罩框架510可包括第二框架元件524。遮罩框架510可包括第三框架元件526。遮罩框架510可包括第四框架元件528。第三框架元件526可相鄰於或連接於第一框架元件522。第二框架元件524可相鄰於或連接於第三框架元件526。第四框架元件528可相鄰於或連接於第二框架元件。第一框架元件522可相鄰於或連接於第四框架元件528。當遮罩框架510係舉例為在遮罩組件如此處所述的非接觸懸浮時位在實質上垂直定向中時,第一框架元件522及/或第二框架元件524可在水平或實質上水平方向中延伸。當遮罩框架係在實質上垂直定向中時,第三框架元件526及/或第四框架元件528可在垂直或實質上垂直方向中延伸。The mask frame 510 can include one or more frame elements. The window defined by the mask frame 510 can be surrounded by one or more frame elements. The frame elements of the mask frame can be rod shaped. The mask frame 510 can include a first frame element 522. The mask frame 510 can include a second frame element 524. The mask frame 510 can include a third frame element 526. The mask frame 510 can include a fourth frame element 528. The third frame member 526 can be adjacent to or coupled to the first frame member 522. The second frame member 524 can be adjacent to or coupled to the third frame member 526. The fourth frame member 528 can be adjacent to or coupled to the second frame member. The first frame member 522 can be adjacent to or coupled to the fourth frame member 528. When the mask frame 510 is exemplified as being in a substantially vertical orientation when the mask assembly is in a non-contact suspension as described herein, the first frame member 522 and/or the second frame member 524 can be horizontally or substantially horizontally Extend in the direction. The third frame member 526 and/or the fourth frame member 528 can extend in a vertical or substantially vertical direction when the mask frame is in a substantially vertical orientation.

遮罩支撐件310可由載體210支撐。遮罩支撐件310可貼附於載體210。遮罩支撐件310可在數個耦接點貼附於載體210。遮罩支撐件310舉例為遮罩框架510,可藉由數個緊固件貼附於載體210。此些緊固件舉例為螺絲或螺栓。舉例來說,至少兩個緊固件可使用,以貼附遮罩框架510於載體210。此至少兩個緊固件舉例為三或多個緊固件。遮罩支撐件310可配置在載體210及遮蔽裝置20之間。The mask support 310 can be supported by the carrier 210. The mask support 310 can be attached to the carrier 210. The mask support 310 can be attached to the carrier 210 at a number of coupling points. The mask support 310 is exemplified by a mask frame 510 that can be attached to the carrier 210 by a plurality of fasteners. These fasteners are exemplified by screws or bolts. For example, at least two fasteners can be used to attach the mask frame 510 to the carrier 210. The at least two fasteners are exemplified by three or more fasteners. The mask support 310 can be disposed between the carrier 210 and the screening device 20.

根據可與此處所述其他實施例結合之數個實施例,遮罩支撐件310可機械地耦接於載體210而使得載體210的變形提供遮罩支撐件310之形狀、對準及/或位置的調整。舉例來說,在利用數個螺絲來貼附於載體之遮罩框架的情況中,遮罩支撐件310之對準可藉由變形載體210來改變。According to several embodiments, which can be combined with other embodiments described herein, the mask support 310 can be mechanically coupled to the carrier 210 such that deformation of the carrier 210 provides the shape, alignment, and/or shape of the mask support 310. Adjustment of position. For example, in the case of a mask frame that is attached to the carrier with a plurality of screws, the alignment of the mask support 310 can be changed by the deformation carrier 210.

根據可與此處所述其他實施例結合之數個實施例,由載體210支撐之遮蔽裝置20可機械地耦接於載體210而使得載體210之變形提供遮蔽裝置20之形狀、對準及/或位置的調整。舉例來說,在貼附於遮罩框架之撓性之遮蔽裝置且其中遮罩框架藉由數個螺絲貼附於載體之情況中,遮蔽裝置之對準可藉由變形載體來改變。According to several embodiments, which can be combined with other embodiments described herein, the screening device 20 supported by the carrier 210 can be mechanically coupled to the carrier 210 such that deformation of the carrier 210 provides the shape, alignment and/or shielding device 20. Or adjustment of position. For example, in the case of a flexible shielding device attached to a mask frame and in which the mask frame is attached to the carrier by a plurality of screws, the alignment of the shielding device can be changed by deforming the carrier.

根據可與此處所述其他實施例結合之數個實施例,載體210之形狀可控制,以補償遮罩支撐件310的變形,特別是補償由作用於遮罩支撐件310上之重力所導致的遮罩支撐件之變形。舉例來說,載體210的變形可提供,以補償遮罩支撐件310之變形。According to several embodiments, which can be combined with other embodiments described herein, the shape of the carrier 210 can be controlled to compensate for the deformation of the mask support 310, particularly the compensation caused by the force of gravity acting on the mask support 310. The deformation of the mask support. For example, a deformation of the carrier 210 can be provided to compensate for the deformation of the mask support 310.

載體210之形狀可控制,以對準遮罩框架510之第一框架元件522於實質上水平方向,實質上水平方向舉例為第一方向692。舉例來說,載體210之變形可提供,以補償第一框架元件522的變形。載體210之變形可提供,以對準第一框架元件522於實質上水平方向。The shape of the carrier 210 can be controlled to align the first frame member 522 of the mask frame 510 in a substantially horizontal direction, and the substantially horizontal direction is exemplified as the first direction 692. For example, a deformation of the carrier 210 can be provided to compensate for the deformation of the first frame member 522. A deformation of the carrier 210 can be provided to align the first frame member 522 in a substantially horizontal direction.

根據可與此處所述其他實施例結合之數個實施例,磁性懸浮力係為作用於遮罩組件200之力。磁性懸浮力係裝配,以用於抵抗作用於遮罩組件200之重力。磁性懸浮力可藉由此些磁性單元610之一個磁性單元提供。磁性懸浮力在垂直或實質上垂直方向中延伸。According to several embodiments, which can be combined with other embodiments described herein, the magnetic levitation force is the force acting on the mask assembly 200. The magnetic levitation force is assembled to resist the gravitational force acting on the mask assembly 200. The magnetic levitation force can be provided by one of the magnetic units of the magnetic unit 610. The magnetic levitation force extends in a vertical or substantially vertical direction.

根據可與此處所述其他實施例結合之數個實施例,此些磁性懸浮力620係共同地懸浮遮罩組件200。These magnetic levitation forces 620 collectively suspend the visor assembly 200 in accordance with several embodiments that can be combined with other embodiments described herein.

根據可與此處所述其他實施例結合之數個實施例,此些磁性懸浮力620係裝配,以用於提供載體210之變形,特別是載體210的目標變形。變形可提供,以對準載體210所支撐的遮蔽裝置20。According to several embodiments, which can be combined with other embodiments described herein, such magnetic levitation forces 620 are assembled for providing deformation of the carrier 210, particularly target deformation of the carrier 210. Deformation may be provided to align the screening device 20 supported by the carrier 210.

根據可與此處所述其他實施例結合之數個實施例,數個磁性懸浮力620可包括2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20或更多的磁性懸浮力。According to several embodiments, which may be combined with other embodiments described herein, the plurality of magnetic levitation forces 620 may include 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14 , 15, 16, 17, 18, 19, 20 or more magnetic levitation forces.

根據可與此處所述其他實施例結合之數個實施例,此些磁性懸浮力620之第一磁性懸浮力可藉由此些磁性單元610之第一磁性單元提供。第二磁性懸浮力可藉由此些磁性單元之第二磁性單元提供。第三磁性懸浮力可藉由此些磁性單元610之第三磁性單元提供。此些磁性單元610之各磁性單元可提供此些磁性懸浮力之一磁性懸浮力。According to several embodiments, which may be combined with other embodiments described herein, the first magnetic levitation force of such magnetic levitation forces 620 may be provided by the first magnetic unit of the magnetic units 610. The second magnetic levitation force can be provided by the second magnetic unit of the magnetic units. The third magnetic levitation force can be provided by the third magnetic unit of the magnetic units 610. Each of the magnetic units of the magnetic units 610 can provide one of these magnetic levitation forces.

此些磁性懸浮力620之各磁性懸浮力具有一大小。此些磁性懸浮力620之此大小係提供及/或控制,以提供載體210的變形。根據可與此處所述其他實施例結合之數個實施例,此些磁性懸浮力620之至少兩個磁性懸浮力可具有不同的大小,特別是至少三個磁性懸浮力可具有不同的大小。此些磁性懸浮力620之不同大小可提供載體210之變形。The magnetic levitation forces of the magnetic levitation forces 620 have a size. This size of such magnetic levitation forces 620 is provided and/or controlled to provide for deformation of the carrier 210. According to several embodiments, which may be combined with other embodiments described herein, at least two of the magnetic levitation forces 620 may have different sizes, and in particular at least three magnetic levitation forces may have different sizes. The different sizes of these magnetic levitation forces 620 provide for deformation of the carrier 210.

數個磁性懸浮力620可包括下述之至少一者:第一磁性懸浮力;第二磁性懸浮力;及第三磁性懸浮力。The plurality of magnetic levitation forces 620 can include at least one of: a first magnetic levitation force; a second magnetic levitation force; and a third magnetic levitation force.

根據可與此處所述其他實施例結合之數個實施例,第一磁性懸浮力之大小可不同於第二磁性懸浮力之大小。According to several embodiments, which can be combined with other embodiments described herein, the magnitude of the first magnetic levitation force can be different than the magnitude of the second magnetic levitation force.

根據可與此處所述其他實施例結合之數個實施例,第二磁性懸浮力的大小可不同於第一磁性懸浮力的大小。第二磁性懸浮力的大小可不同於第三磁性懸浮力的大小。According to several embodiments, which can be combined with other embodiments described herein, the magnitude of the second magnetic levitation force can be different than the magnitude of the first magnetic levitation force. The magnitude of the second magnetic levitation force may be different from the magnitude of the third magnetic levitation force.

此些磁性懸浮力620之大小可具有數種可行的分佈及輪廓。大小的分佈可決定於載體210的目標變形,載體210的目標變形係將由此些磁性懸浮力620所提供。第8a-b圖繪示此些磁性懸浮力620之大小的可能分佈之兩個例子的示意圖。其他分佈亦可考慮。These magnetic levitation forces 620 can be sized to have several possible distributions and profiles. The distribution of the size may be determined by the target deformation of the carrier 210, and the target deformation of the carrier 210 will be provided by the magnetic levitation forces 620. Figures 8a-b are schematic illustrations of two examples of possible distributions of such magnetic levitation forces 620. Other distributions can also be considered.

繪示於第8a-b圖中之此些磁性懸浮力620包括磁性懸浮力821、822、823、824及825。如第8a圖中所示,作用於載體210之中央部份上的磁性懸浮力823之大小可分別大於作用於載體210的外左及外右部份上之磁性懸浮力821及825之各者的大小。或者,如第8b圖中所示,磁性懸浮力821及825可各具有一大小,大於磁性懸浮力823之大小。The magnetic levitation forces 620 depicted in Figures 8a-b include magnetic levitation forces 821, 822, 823, 824, and 825. As shown in Fig. 8a, the magnetic levitation force 823 acting on the central portion of the carrier 210 can be larger than the magnetic levitation forces 821 and 825 acting on the outer left and outer right portions of the carrier 210, respectively. the size of. Alternatively, as shown in FIG. 8b, the magnetic levitation forces 821 and 825 can each have a size greater than the magnitude of the magnetic levitation force 823.

如圖所示,繪示於第8a圖中之由此些磁性懸浮力620所提供之載體210的變形係不同於繪示於第8b圖中之由此些磁性懸浮力620所提供之載體210的變形。在此兩個情況中,載體210之變形係提供,以對準遮蔽裝置20。As shown, the deformation of the carrier 210 provided by the magnetic levitation forces 620 illustrated in FIG. 8a is different from the carrier 210 provided by the magnetic levitation forces 620 illustrated in FIG. 8b. The deformation. In both cases, a deformation of the carrier 210 is provided to align the screening device 20.

藉由在遮罩組件200非接觸懸浮時執行一或多個測量,可取得有關於磁性懸浮力之大小的特別分佈而適用於提供載體210之目標變形之資訊,以對準遮蔽裝置20。By performing one or more measurements while the mask assembly 200 is in non-contact suspension, a special distribution of the magnitude of the magnetic levitation force can be obtained to provide information indicative of the target deformation of the carrier 210 to align the screening device 20.

舉例來說,一或多個偵測器舉例為相機,可使用以測量非接觸懸浮之遮蔽裝置的對準。於一些情況中,可決定存在之遮蔽裝置20的未對準。藉由提供載體210之適當變形,未對準可校正。基於測量之遮蔽裝置20的未對準,可計算用於磁性懸浮力之大小的目標分佈,以提供載體210之目標變形來校正未對準。懸浮遮罩組件200之磁性懸浮力的大小可接著採用,以匹配計算之目標分佈。在目標分佈生效下,懸浮遮罩組件之磁性懸浮力係提供載體210之目標變形。懸浮之載體210的變形係補償遮蔽裝置20的未對準,使得遮蔽裝置20目前係良好地對準。For example, one or more detectors are exemplified by a camera that can be used to measure the alignment of a non-contact suspended masking device. In some cases, the misalignment of the shielding device 20 that is present may be determined. Misalignment can be corrected by providing suitable deformation of the carrier 210. Based on the misalignment of the measured screening device 20, a target distribution for the magnitude of the magnetic levitation force can be calculated to provide a target deformation of the carrier 210 to correct for misalignment. The magnitude of the magnetic levitation force of the suspension mask assembly 200 can then be employed to match the calculated target distribution. The magnetic levitation force of the suspension mask assembly provides the target deformation of the carrier 210 when the target distribution is in effect. The deformation of the suspended carrier 210 compensates for the misalignment of the screening device 20 such that the screening device 20 is now well aligned.

製程可包含數種遮罩組件之處理,此些遮罩組件之各者包括舉例為具有相同形式及尺寸的載體、遮蔽裝置及選擇的遮罩支撐件。舉例為因重力彎折遮罩支撐件所導致之遮蔽裝置的初始未對準可因而對處理之全部遮罩組件來說為相同的未對準。一旦用於一個所提供之載體的目標變形係決定來校正未對準,及一旦磁性懸浮力之大小的一個對應之目標分佈係計算來提供此載體之目標變形,大小之相同目標分佈可提供而用於接續之將懸浮及處理的遮罩組件,而無需重複測量接續之遮蔽裝置的未對準的需求。用於磁性懸浮力之大小的目標分佈可針對一個提供之遮罩組件計算一次,及之後應用於由此些磁性單元非接觸懸浮的數個接續之遮罩組件。The process can include the processing of several masking assemblies, each of which includes, for example, a carrier of the same form and size, a screening arrangement, and an optional mask support. For example, the initial misalignment of the screening device caused by the bending of the mask support by gravity can thus be the same misalignment for all of the mask assemblies being processed. Once the target deformation for a provided carrier is determined to correct the misalignment, and once a corresponding target distribution of the magnitude of the magnetic levitation force is calculated to provide the target deformation of the carrier, the same target distribution of the size can be provided. The splicing assembly for splicing and handling, without the need to repeatedly measure the misalignment of the splicing device. The target distribution for the magnitude of the magnetic levitation force can be calculated once for a provided mask assembly and then applied to a number of successive mask assemblies that are non-contact suspended by the magnetic units.

第9a-b圖繪示根據此處所述實施例之用以對準遮蔽裝置之方法的示意圖。9a-b are schematic views of a method for aligning a screening device in accordance with embodiments described herein.

第9a圖繪示出遮罩組件200,遮罩組件200係由此些磁性單元610提供之第一組磁性懸浮力910非接觸懸浮。第一組磁性懸浮力910之個別的磁性懸浮力係以參考編號915所表示。第一組磁性懸浮力910可為初始組磁性懸浮力,初始組磁性懸浮力並非裝配以用於提供載體210之變形。如第9a圖中所示,當遮罩組件200由第一組磁性懸浮力910非接觸懸浮時,載體210可為實質上未變形狀態。舉例來說,第一組磁性懸浮力910之大小可全部實質上相同。第一組磁性懸浮力910之各磁性懸浮力可運載遮罩組件200之全部重量的相等比例。Figure 9a depicts a mask assembly 200 that is non-contact suspended by a first set of magnetic levitation forces 910 provided by the magnetic units 610. The individual magnetic levitation forces of the first set of magnetic levitation forces 910 are indicated by reference numeral 915. The first set of magnetic levitation forces 910 can be an initial set of magnetic levitation forces that are not assembled to provide deformation of the carrier 210. As shown in FIG. 9a, when the mask assembly 200 is non-contact suspended by the first set of magnetic levitation forces 910, the carrier 210 can be substantially undeformed. For example, the magnitude of the first set of magnetic levitation forces 910 can all be substantially the same. The respective magnetic levitation forces of the first set of magnetic levitation forces 910 can carry an equal proportion of the total weight of the mask assembly 200.

如第9a圖中所示,當第一組磁性懸浮力910非接觸懸浮遮罩組件200時,遮蔽裝置及選擇之遮罩支撐件310(未繪示)可為變形狀態,舉例為由作用於遮蔽裝置20及/或遮罩支撐件310上之重力所導致。如第9a圖中所示,當遮罩組件200由第一組磁性懸浮力910非接觸懸浮時,遮蔽裝置20之未對準可能存在。在第9a圖中所示之例子中,遮蔽裝置20之上邊緣係沒有良好對準於參考軸642。遮蔽裝置20之下邊緣係沒有良好對準於參考軸652。遮蔽裝置20之未對準可因遮蔽裝置20及/或遮罩支撐件310之變形狀態所導致。As shown in FIG. 9a, when the first set of magnetic levitation forces 910 are non-contacting the suspension mask assembly 200, the masking means and the selected mask support member 310 (not shown) may be in a deformed state, for example by acting on The weight of the screening device 20 and/or the mask support 310 is caused by gravity. As shown in Figure 9a, when the mask assembly 200 is non-contact suspended by the first set of magnetic levitation forces 910, misalignment of the screening device 20 may be present. In the example shown in Figure 9a, the upper edge of the screening device 20 is not well aligned with the reference axis 642. The lower edge of the screening device 20 is not well aligned with the reference axis 652. The misalignment of the screening device 20 can result from the deformed state of the screening device 20 and/or the mask support 310.

根據可與此處所述其他實施例結合之數個實施例,遮蔽裝置及/或遮罩支撐件之對準可藉由一或多個測量裝置進行測量。此一或多個測量裝置舉例為相機或感測器。第9a圖繪示兩個測量裝置912及914,用以測量遮蔽裝置之對準。可亦設置單一個測量裝置或二或多個測量裝置。當遮罩組件200由第一組磁性懸浮力910非接觸懸浮時,測量裝置912及/或測量裝置914可使用,以測量遮蔽裝置的對準。遮蔽裝置20之未對準可測量出來。特別是,遮蔽裝置20之形狀相對於遮蔽裝置20之目標形狀的偏差可從遮蔽裝置20之測量的對準來決定。According to several embodiments, which can be combined with other embodiments described herein, the alignment of the screening device and/or the mask support can be measured by one or more measuring devices. The one or more measuring devices are exemplified by a camera or a sensor. Figure 9a shows two measuring devices 912 and 914 for measuring the alignment of the screening device. A single measuring device or two or more measuring devices can also be provided. When the mask assembly 200 is non-contact suspended by the first set of magnetic levitation forces 910, the measuring device 912 and/or the measuring device 914 can be used to measure the alignment of the screening device. The misalignment of the screening device 20 can be measured. In particular, the deviation of the shape of the screening device 20 from the target shape of the screening device 20 can be determined by the alignment of the measurements of the screening device 20.

為了補償遮蔽裝置20的未對準,可決定出載體210之目標對準。特別是,可決定出第二組磁性懸浮力920。第二組磁性懸浮力920之大小可至少從遮蔽裝置20所測量的對準來計算。第二組磁性懸浮力20可裝配,以用於提供載體210之變形來補償遮蔽裝置20的未對準。To compensate for the misalignment of the screening device 20, the target alignment of the carrier 210 can be determined. In particular, a second set of magnetic levitation forces 920 can be determined. The magnitude of the second set of magnetic levitation forces 920 can be calculated from at least the alignment measured by the screening device 20. A second set of magnetic levitation forces 20 can be assembled for providing deformation of the carrier 210 to compensate for misalignment of the screening device 20.

第9b圖繪示出非接觸懸浮遮罩組件200之第二組磁性懸浮力920。第二組磁性懸浮力920係由此些磁性單元610提供。第二組磁性懸浮力920之個別的磁性懸浮力係以參考編號925標註。Figure 9b depicts a second set of magnetic levitation forces 920 of the non-contact floating visor assembly 200. A second set of magnetic levitation forces 920 is provided by the magnetic units 610. The individual magnetic levitation forces of the second set of magnetic levitation forces 920 are indicated by reference numeral 925.

如第9b圖中所示,當第二組磁性懸浮力920非接觸懸浮遮罩組件200時,載體210係在變形狀態中。舉例來說,第二組磁性懸浮力920之大小的分佈可為非均勻的,以提供載體210之目標變形。如第9b圖中所示,當遮罩組件200由第二組磁性懸浮力920非接觸懸浮時,遮蔽裝置20及選擇的遮罩支撐件310(未繪示於第9b圖中)可為實質上未變形狀態。如第9b圖中所示,當遮罩組件200由第二組磁性懸浮力920非接觸懸浮時,遮蔽裝置20係良好地對準。在第9b圖中所示的例子中,遮蔽裝置20之上邊緣係對準於參考軸642。遮蔽裝置20之下邊緣係對準於參考軸652。As shown in Figure 9b, when the second set of magnetic levitation forces 920 are in non-contact with the suspension mask assembly 200, the carrier 210 is in a deformed state. For example, the distribution of the magnitude of the second set of magnetic levitation forces 920 can be non-uniform to provide target deformation of the carrier 210. As shown in FIG. 9b, when the mask assembly 200 is non-contact suspended by the second set of magnetic levitation forces 920, the screening device 20 and the selected mask support 310 (not shown in FIG. 9b) may be substantial. Undeformed state. As shown in Figure 9b, when the mask assembly 200 is non-contact suspended by the second set of magnetic levitation forces 920, the screening device 20 is well aligned. In the example shown in Figure 9b, the upper edge of the screening device 20 is aligned with the reference axis 642. The lower edge of the screening device 20 is aligned with the reference axis 652.

如上所述,一旦第二組磁性懸浮力920之大小係計算而用於遮蔽裝置20時,第二組磁性懸浮力可亦應用於懸浮及對準一或多個其他遮罩組件,而無需重複未對準之測量及磁性懸浮力之分佈的計算。As described above, once the magnitude of the second set of magnetic levitation forces 920 is calculated for use in the screening device 20, the second set of magnetic levitation forces can also be applied to suspend and align one or more other illuminating components without repeating Measurement of misalignment and calculation of the distribution of magnetic levitation forces.

根據一實施例,提出一種對準遮蔽裝置的方法。方法包括藉由第一組磁性懸浮力910非接觸懸浮第一遮罩組件,第一遮罩組件舉例為遮罩組件200。第一遮罩組件包括第一載體及第一遮蔽裝置,第一遮蔽裝置係由第一載體支撐。第一組磁性懸浮力可藉由數個磁性單元610提供。方法包括在第一遮罩組件由第一組磁性懸浮力910非接觸懸浮時,測量第一遮蔽裝置的對準。方法包括特別是從至少第一遮蔽裝置的測量之對準來計算第二組磁性懸浮力920。第二組磁性懸浮力920可計算來用於此些磁性單元610。舉例來說,方法可包括從至少第一遮蔽裝置之測量的對準來計算第二組磁性懸浮力920的大小。方法包括藉由第二組磁性懸浮力920非接觸懸浮遮罩組件。遮罩組件包括載體及遮蔽裝置,遮蔽裝置由載體所支撐。遮罩組件係為第一遮罩組件或第二遮罩組件。第二組磁性懸浮力920提供載體的變形。舉例來說,載體之變形可提供,以對準遮蔽裝置。According to an embodiment, a method of aligning a screening device is presented. The method includes non-contact suspension of the first mask assembly by a first set of magnetic levitation forces 910, the first mask assembly being exemplified by the mask assembly 200. The first mask assembly includes a first carrier and a first shielding device, the first shielding device being supported by the first carrier. The first set of magnetic levitation forces can be provided by a plurality of magnetic units 610. The method includes measuring an alignment of the first screening device when the first mask assembly is non-contact suspended by the first set of magnetic levitation forces 910. The method includes calculating a second set of magnetic levitation forces 920, particularly from alignment of measurements of at least the first screening device. A second set of magnetic levitation forces 920 can be calculated for such magnetic units 610. For example, the method can include calculating a magnitude of the second set of magnetic levitation forces 920 from the measured alignment of at least the first screening device. The method includes non-contact suspension of the mask assembly by a second set of magnetic levitation forces 920. The mask assembly includes a carrier and a screening device supported by the carrier. The mask assembly is a first mask assembly or a second mask assembly. A second set of magnetic levitation forces 920 provides for deformation of the carrier. For example, a deformation of the carrier can be provided to align the screening device.

根據處此處所述數個實施例的第一遮罩組件可為根據此處所述數個實施例之遮罩組件200。根據此處所述數個實施例之第一載體可為根據此處所述數個實施例之載體210。根據此處所述數個實施例之第一遮蔽裝置可為根據此處所述數個實施例之遮蔽裝置20。第一遮罩組件可包括根據此處所述數個實施例之遮罩支撐件310。根據此處所述數個實施例之有關於遮罩組件200、載體210及遮蔽裝置20之此處所述的特徵及方面亦應用於根據此處所述數個實施例之第一遮罩組件、第一載體及第一遮蔽裝置。The first mask assembly according to the various embodiments described herein can be a mask assembly 200 in accordance with several embodiments described herein. The first carrier according to several embodiments described herein can be the carrier 210 according to several embodiments described herein. The first screening device according to several embodiments described herein may be the screening device 20 according to several embodiments described herein. The first mask assembly can include a mask support 310 in accordance with several embodiments described herein. The features and aspects described herein with respect to the mask assembly 200, the carrier 210, and the screening device 20 in accordance with the various embodiments described herein are also applicable to the first mask assembly in accordance with the various embodiments described herein. And a first carrier and a first shielding device.

根據此處所述數個實施例之第二組磁性懸浮力920可為根據此處所述數個實施例之此些磁性懸浮力620。根據此處所述數個實施例之第二遮罩組件可為根據此處所述數個實施例之遮罩組件200。第二遮罩組件可包括根據此處所述數個實施例之載體210、遮蔽裝置20及/或遮罩支撐件310。有關於此些磁性懸浮力620及遮罩組件200之所述的特徵及方面亦應用於根據此處所述數個實施例之第二組磁性懸浮力920及第二遮罩組件。The second set of magnetic levitation forces 920 according to the various embodiments described herein can be such magnetic levitation forces 620 in accordance with the various embodiments described herein. The second mask assembly in accordance with the various embodiments described herein can be a mask assembly 200 in accordance with several embodiments described herein. The second mask assembly can include the carrier 210, the screening device 20, and/or the mask support 310 in accordance with various embodiments described herein. The features and aspects described herein with respect to such magnetic levitation forces 620 and mask assembly 200 are also applicable to the second set of magnetic levitation forces 920 and second hood assemblies in accordance with the various embodiments described herein.

根據可與此處所述其他實施例結合之數個實施例,第二組磁性懸浮力之至少兩個磁性懸浮力可具有不同的大小。According to several embodiments, which may be combined with other embodiments described herein, at least two of the magnetic levitation forces of the second set of magnetic levitation forces may have different sizes.

根據可與此處所述其他實施例結合之數個實施例,方法可包括從至少第一遮蔽裝置之所測量的對準來決定第一遮蔽裝置之形狀與目標形狀的偏差。偏差已決定之第一遮蔽裝置的形狀可為第一遮蔽裝置由第一組磁性懸浮力910非接觸懸浮期間之第一遮蔽裝置的形狀。目標形狀可為實質上未變形之第一遮蔽裝置的形狀。According to several embodiments, which can be combined with other embodiments described herein, the method can include determining a deviation of the shape of the first screening device from the target shape from the measured alignment of at least the first screening device. The shape of the first screening device determined by the deviation may be the shape of the first shielding device during the non-contact suspension of the first shielding device by the first set of magnetic levitation forces 910. The target shape may be the shape of the first shielding device that is substantially undeformed.

根據可與此處所述其他實施例結合之數個實施例,第二組磁性懸浮力920係提供而用於非接觸懸浮第一遮罩組件。方法可包括在第一遮罩組件非接觸懸浮時從第一組磁性懸浮力改變成第二組磁性懸浮力。According to several embodiments, which can be combined with other embodiments described herein, a second set of magnetic levitation forces 920 is provided for non-contact suspension of the first hood assembly. The method can include changing from the first set of magnetic levitation forces to the second set of magnetic levitation forces when the first mask assembly is non-contact suspended.

根據其他實施例,及如第10圖中所示,設備1000係提供。設備1000包括磁性懸浮系統,包括數個磁性單元610。設備1000包括遮罩組件200。遮罩組件200包括載體210及遮蔽裝置20,遮蔽裝置20由載體支撐。設備1000包括控制單元1010,控制單元1010連接於此些磁性單元610。設備1000係裝配,以用於在遮罩組件200非接觸懸浮時控制載體210之形狀。According to other embodiments, and as shown in FIG. 10, device 1000 is provided. Apparatus 1000 includes a magnetic suspension system including a plurality of magnetic units 610. Apparatus 1000 includes a mask assembly 200. The mask assembly 200 includes a carrier 210 and a screening device 20 that is supported by a carrier. Apparatus 1000 includes a control unit 1010 that is coupled to such magnetic units 610. Apparatus 1000 is assembled for controlling the shape of carrier 210 when mask assembly 200 is in non-contact suspension.

根據可與此處所述其他實施例結合之數個實施例,控制單元1010可裝配,以用於控制此些磁性單元610,以在遮罩組件200非接觸懸浮時控制載體210的形狀。According to several embodiments, which can be combined with other embodiments described herein, the control unit 1010 can be assembled for controlling such magnetic units 610 to control the shape of the carrier 210 when the mask assembly 200 is in non-contact suspension.

根據可與此處所述其他實施例結合之數個實施例,此些磁性單元610可裝配,以用於提供數個磁性懸浮力620來非接觸懸浮遮罩組件200。控制單元1010可裝配,以用於控制此些磁性懸浮力620來控制載體210的形狀,以舉例為提供載體210之變形。控制單元1010可裝配,以用於控制此些磁性懸浮力620來提供載體210之變形而對準遮蔽裝置20。According to several embodiments, which can be combined with other embodiments described herein, such magnetic units 610 can be assembled for providing a plurality of magnetic levitation forces 620 for the non-contact suspension mask assembly 200. Control unit 1010 can be assembled for controlling such magnetic levitation forces 620 to control the shape of carrier 210, for example to provide for deformation of carrier 210. Control unit 1010 can be assembled for controlling such magnetic levitation forces 620 to provide deformation of carrier 210 to align shield device 20.

根據數個實施例之設備1000可適用於執行根據此處所述之方法的數個實施例的任何方法特徵,特別是於附屬方法申請專利範圍中所述之任何特徵。如此處所述之控制單元可適用於執行此處所述之方法的實施例之任何方法特徵,特別是於附屬方法申請專利範圍中所述之任何特徵。Apparatus 1000 according to several embodiments may be adapted to perform any of the method features of several embodiments in accordance with the methods described herein, particularly any of the features described in the appended claims. The control unit as described herein may be adapted to perform any of the method features of the embodiments of the methods described herein, particularly any of the features described in the scope of the appended claims.

根據可與此處所述其他實施例結合之數個實施例,數個磁性單元610可包括第一磁性單元。數個磁性單元610可包括第二磁性單元。數個磁性單元610可包括第三磁性單元。數個磁性單元610可包括其他磁性單元。數個磁性單元610可包括2、3、4、5、6、7、8、9、10、11、12、13、14、15、16、17、18、19、20或更多個磁性單元。舉例來說,此些磁性單元610可包括在一個自由度中之5至20個磁性單元。According to several embodiments, which can be combined with other embodiments described herein, the plurality of magnetic units 610 can include a first magnetic unit. The plurality of magnetic units 610 can include a second magnetic unit. The plurality of magnetic units 610 can include a third magnetic unit. The plurality of magnetic units 610 can include other magnetic units. The plurality of magnetic units 610 may include 2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20 or more magnetic units . For example, such magnetic units 610 can include from 5 to 20 magnetic units in one degree of freedom.

根據可與此處所述其他實施例結合之數個實施例,此些磁性單元610之任何磁性單元可為主動磁性單元。此些磁性單元610可為數個主動磁性單元。Any of the magnetic units of such magnetic units 610 can be active magnetic units, according to several embodiments that can be combined with other embodiments described herein. Such magnetic units 610 can be a plurality of active magnetic units.

根據可與此處所述其他實施例結合之數個實施例,主動磁性單元可裝配,以用於產生磁場來提供在垂直方向中延伸之磁性懸浮力,垂直方向舉例為繪示於圖式中之第二方向694。主動磁性單元可控制,以提供可調整的磁場。可調整之磁場可為靜態或動態磁場。主動磁性單元可為或包括一元件,選自由電磁裝置;螺線管;線圈;超導磁鐵;或其任何組合所組成之群組。According to several embodiments, which can be combined with other embodiments described herein, the active magnetic unit can be assembled for generating a magnetic field to provide a magnetic levitation force extending in a vertical direction, the vertical direction being illustrated in the drawings. The second direction is 694. The active magnetic unit is controllable to provide an adjustable magnetic field. The adjustable magnetic field can be a static or dynamic magnetic field. The active magnetic unit can be or include an element selected from the group consisting of an electromagnetic device; a solenoid; a coil; a superconducting magnet; or any combination thereof.

術語「主動」磁性單元係於此使用以與「被動」磁性單元之概念有所區別。被動磁性單元可意指為至少不在操作設備期間具有數個磁性性質之元件,此些磁性性質係未面臨主動控制或調整。舉例來說,被動磁性單元之磁性性質可在遮罩組件非接觸懸浮期間不面臨主動控制。被動磁性單元可為例如是鐵磁材料之磁性材料、永久磁鐵或可為具有磁性性質。The term "active" magnetic unit is used herein to distinguish it from the concept of a "passive" magnetic unit. A passive magnetic unit may mean an element that has at least a plurality of magnetic properties during operation of the device, such magnetic properties being not actively controlled or adjusted. For example, the magnetic properties of a passive magnetic unit may not be subject to active control during non-contact suspension of the mask assembly. The passive magnetic unit may be a magnetic material such as a ferromagnetic material, a permanent magnet or may have magnetic properties.

相較於被動磁性單元,有鑑於主動磁性單元產生之磁場的可調整性及可控制性,主動磁性單元提供更多靈活性及精準度。Compared with the passive magnetic unit, the active magnetic unit provides more flexibility and precision in view of the adjustability and controllability of the magnetic field generated by the active magnetic unit.

當遮罩組件200由此些磁性單元610非接觸懸浮時,此些磁性單元610可配置在遮罩組件200之上方。When the mask assembly 200 is non-contact suspended by the magnetic units 610, the magnetic units 610 can be disposed above the mask assembly 200.

根據可與此處所述其他實施例結合之數個實施例,設備1000可包括一或多個測量裝置,舉例為繪示於第11圖中之測量裝置912及914。此一或多個測量裝置可裝配,以用於測量遮蔽裝置20及/或遮罩支撐件310之對準。此一或多個測量裝置可裝配,以用於在遮罩組件200由此些磁性單元610非接觸懸浮時測量遮蔽裝置20及/或遮罩支撐件310的對準。控制單元1010可連接於此一或多個測量裝置。控制單元1010可裝配,以用於計算此些磁性懸浮力620之大小。大小可至少基於由此一或多個測量裝置所測量的遮蔽裝置20之對準來進行計算。According to several embodiments, which may be combined with other embodiments described herein, device 1000 may include one or more measurement devices, such as measurement devices 912 and 914 illustrated in FIG. The one or more measuring devices can be assembled for measuring the alignment of the screening device 20 and/or the mask support 310. The one or more measuring devices can be assembled for measuring the alignment of the screening device 20 and/or the mask support 310 when the mask assembly 200 is in non-contact suspension of the magnetic units 610. Control unit 1010 can be coupled to one or more of the measurement devices. Control unit 1010 can be assembled for use in calculating the magnitude of such magnetic levitation forces 620. The size may be calculated based at least on the alignment of the screening device 20 as measured by the one or more measuring devices.

根據可與此處所述其他實施例結合之數個實施例,設備1000可包括處理腔室1120。第11圖繪示出處理腔室1120。此些磁性單元610可配置在處理腔室1120中。此一或多個測量裝置舉例為測量裝置912及/或914,可配置在處理腔室1120中。Apparatus 1000 can include a processing chamber 1120 in accordance with several embodiments that can be combined with other embodiments described herein. FIG. 11 depicts the processing chamber 1120. Such magnetic units 610 can be disposed in the processing chamber 1120. The one or more measuring devices are exemplified by measuring devices 912 and/or 914 and may be disposed in processing chamber 1120.

處理腔室1120可為真空腔室。處理腔室可為真空沈積腔室。Processing chamber 1120 can be a vacuum chamber. The processing chamber can be a vacuum deposition chamber.

根據可與此處所述其他實施例結合之數個實施例,設備1000可包括沈積源,特別是用以塗佈由遮蔽裝置20遮蔽之基板之沈積源。在塗佈期間,基板可由載體210支撐或由其他載體支撐。在塗佈期間,基板可非接觸懸浮。沈積源可配置在處理腔室1120中。沈積源可包括靶材,舉例為具有沈積材料於其上,或任何其他配置來提供釋放以沈積於基板上之材料。沈積源可包括可旋轉靶。沈積材料可根據沈積製程及已塗佈之基板的後續應用選擇。舉例來說,沈積材料可為使用於OLEDs製造中的有機材料。舉例來說,沈積源之沈積材料可為包括小分子、聚合物、及磷光材料之材料。舉例來說,沈積材料可選自包括鉗合物(chelates)(舉例為Alq3 )、螢光及磷光染料(舉例為苝(perylene)、紅螢烯(rubrene)、喹吖啶酮(quinacridone)衍生物等)及共軛之樹枝高分子(dendrimers)之群組。According to several embodiments, which can be combined with other embodiments described herein, apparatus 1000 can include a deposition source, particularly a deposition source for coating a substrate that is obscured by shielding device 20. The substrate may be supported by the carrier 210 or supported by other carriers during coating. The substrate may be non-contact suspended during coating. A deposition source can be disposed in the processing chamber 1120. The deposition source can include a target, such as a material having a deposition material thereon, or any other configuration to provide release for deposition on a substrate. The deposition source can include a rotatable target. The deposition material can be selected according to the deposition process and subsequent application of the coated substrate. For example, the deposition material can be an organic material used in the manufacture of OLEDs. For example, the deposition material of the deposition source may be a material including a small molecule, a polymer, and a phosphorescent material. For example, the deposition material may be selected from the group consisting of chelates (for example Alq 3 ), fluorescent and phosphorescent dyes (for example, perylene, rubrene, quinacridone). Derivatives, etc.) and groups of conjugated dendrimers.

第12圖繪示根據此處所述實施例之設備1000的示意圖。繪示於第12圖中的設備1000包括磁性懸浮系統,包括數個磁性單元610。此些磁性單元610舉例為主動磁性單元,例如是電磁裝置、螺線管、線圈或超導磁鐵。磁性懸浮系統在第一方向692中延伸,第一方向692可為實質上水平方向。遮罩組件200可相對於此些磁性單元610在第一方向692中為可移動的。如第12圖中所示,遮罩組件200可連接於第一被動磁性單元1210,舉例為貼附於第一被動磁性單元1210。第一被動磁性單元1210舉例為鐵磁材料棒。Figure 12 is a schematic illustration of an apparatus 1000 in accordance with embodiments described herein. Apparatus 1000, shown in FIG. 12, includes a magnetic suspension system including a plurality of magnetic units 610. Such magnetic units 610 are exemplified by active magnetic units such as electromagnetic devices, solenoids, coils or superconducting magnets. The magnetic suspension system extends in a first direction 692, which may be a substantially horizontal direction. The mask assembly 200 can be movable relative to the magnetic units 610 in the first direction 692. As shown in FIG. 12, the mask assembly 200 can be coupled to the first passive magnetic unit 1210, for example, to the first passive magnetic unit 1210. The first passive magnetic unit 1210 is exemplified by a rod of ferromagnetic material.

根據可與此處所述其他實施例結合之數個實施例,遮罩組件200可連接於一或多個磁性單元,舉例為第12圖中所示之第一被動磁性單元1210。作用於遮罩組件200上之磁性懸浮力可由此些磁性單元610提供之磁場與連接於遮罩組件200之此一或多個磁性單元之磁性性質的交互作用提供。此些磁性單元610舉例為主動磁性單元,此一或多個磁性單元舉例為第一被動磁性單元1210。此交互作用提供此些磁性單元610及第一被動磁性單元1210之間的磁性吸引。磁性吸引提供作用於第一被動磁性單元1210上之向上力。連接於第一被動磁性單元1210之遮罩組件200係藉由向上力非接觸懸浮。According to several embodiments, which can be combined with other embodiments described herein, the mask assembly 200 can be coupled to one or more magnetic units, such as the first passive magnetic unit 1210 shown in FIG. The magnetic levitation force acting on the mask assembly 200 can be provided by the interaction of the magnetic fields provided by the magnetic units 610 with the magnetic properties of the one or more magnetic units coupled to the mask assembly 200. Such magnetic units 610 are exemplified by active magnetic units, and the one or more magnetic units are exemplified by the first passive magnetic unit 1210. This interaction provides magnetic attraction between the magnetic unit 610 and the first passive magnetic unit 1210. Magnetic attraction provides an upward force on the first passive magnetic unit 1210. The mask assembly 200 coupled to the first passive magnetic unit 1210 is suspended by non-contact force by upward force.

舉例來說,遮罩組件200之載體210可機械地耦接於第一被動磁性單元1210,舉例為貼附於第一被動磁性單元1210。此些磁性懸浮力620可經由載體210機械耦接於第一被動磁性單元1210來作用於載體210。經由載體210至第一被動磁性單元1210之連接,此些磁性懸浮力620於載體210上的作用可控制,以提供載體210之變形。舉例來說,藉由提供具有不同大小的數個磁性懸浮力620,作用於載體210上之向上力可提供,其中向上力在第一方向692中沿著載體210之長度具有不同大小。具有不同大小的向上力可裝配,以用於提供載體210之目標變形。For example, the carrier 210 of the mask assembly 200 can be mechanically coupled to the first passive magnetic unit 1210, for example, to the first passive magnetic unit 1210. The magnetic levitation force 620 can be mechanically coupled to the carrier 210 via the carrier 210 to the first passive magnetic unit 1210. Through the connection of the carrier 210 to the first passive magnetic unit 1210, the effects of the magnetic levitation forces 620 on the carrier 210 can be controlled to provide deformation of the carrier 210. For example, by providing a plurality of magnetic levitation forces 620 having different sizes, an upward force acting on the carrier 210 can be provided, wherein the upward forces have different sizes along the length of the carrier 210 in the first direction 692. Upward forces having different sizes can be assembled for providing target deformation of the carrier 210.

根據可與此處所述其他實施例結合之數個實施例,數個磁性單元610可配置在第一方向692中。此些磁性單元610可為在第一方向692中延伸的線性陣列的磁性單元。According to several embodiments, which may be combined with other embodiments described herein, a plurality of magnetic units 610 may be disposed in a first direction 692. Such magnetic units 610 can be linear arrays of magnetic units that extend in a first direction 692.

此些磁性懸浮力620可在第一方向692中彼此分離。此些磁性懸浮力之第一磁性懸浮力可在第一方向692中與此些磁性懸浮力之第二磁性懸浮力分離。此些磁性懸浮力之第三磁性懸浮力可在第一方向692中與第二磁性懸浮力分離。Such magnetic levitation forces 620 can be separated from each other in the first direction 692. The first magnetic levitation force of the magnetic levitation forces may be separated from the second magnetic levitation force of the magnetic levitation forces in the first direction 692. The third magnetic levitation force of such magnetic levitation forces may be separated from the second magnetic levitation force in the first direction 692.

根據可與此處所述其他實施例結合之數個實施例,此些磁性單元610可在第一方向692中延伸。此些磁性懸浮力可包括第一磁性懸浮力及第二磁性懸浮力。第二磁性懸浮力可在第一方向692中與第一磁性懸浮力分離。第二磁性懸浮力之大小可不同於第一磁性懸浮力之大小。此些磁性懸浮力620可包括在第一方向692中與第二磁性懸浮力分離之第三磁性懸浮力。Such magnetic units 610 can extend in a first direction 692 in accordance with several embodiments that can be combined with other embodiments described herein. Such magnetic levitation forces may include a first magnetic levitation force and a second magnetic levitation force. The second magnetic levitation force can be separated from the first magnetic levitation force in the first direction 692. The magnitude of the second magnetic levitation force may be different from the magnitude of the first magnetic levitation force. Such magnetic levitation forces 620 can include a third magnetic levitation force that is separated from the second magnetic levitation force in the first direction 692.

根據可與此處所述其他實施例結合之數個實施例,基板10可為大面積基板。大面積基板可具有至少0.67 m2 之尺寸。此尺寸可從約0.67 m2 (0.73 m x 0.92 m – 第4.5代)至約8 m2 ,更特別是從約2 m2 至約9 m2 或甚至達12 m2 。舉例來說,大面積基板可為第4.5代、第5代、第7.5代、第8.5代、或甚至是第10代。第4.5代對應於約0.67 m2 之基板(0.73 m x 0.92 m)、第5代對應於約1.4 m2 之基板(1.1 m x 1.3 m)、第7.5代對應於約4.29 m2 之基板(1.95 m x 2.2 m)、第8.5代對應於約5.7 m2 之基板(2.2 m x 2.5 m)、第10代對應於約8.7 m2 之基板(2.85 m × 3.05 m)。甚至例如是第11代及第12代之更高代及對應之基板面積可以類似之方式應用。The substrate 10 can be a large area substrate in accordance with several embodiments that can be combined with other embodiments described herein. The large area substrate can have a size of at least 0.67 m 2 . This size may range from about 0.67 m 2 (0.73 mx 0.92 m - 4.5th generation) to about 8 m 2 , more particularly from about 2 m 2 to about 9 m 2 or even up to 12 m 2 . For example, a large area substrate can be the 4.5th, 5th, 7.5th, 8.5th, or even the 10th generation. The 4.5th generation corresponds to a substrate of about 0.67 m 2 (0.73 mx 0.92 m), the fifth generation corresponds to a substrate of about 1.4 m 2 (1.1 mx 1.3 m), and the 7.5th generation corresponds to a substrate of about 4.29 m 2 (1.95 mx). 2.2 m), the 8.5th generation corresponds to a substrate of approximately 5.7 m 2 (2.2 mx 2.5 m), and the 10th generation corresponds to a substrate of approximately 8.7 m 2 (2.85 m × 3.05 m). Even higher generations such as the 11th and 12th generations and corresponding substrate areas can be applied in a similar manner.

如此處所使用之名稱「基板」可包含非撓性基板及撓性基板。撓性基板舉例為玻璃基板、晶圓、例如是藍寶石或類似者之透明水晶片、或玻璃板材。撓性基板例如是網格(web)或箔。根據可與此處所述其他實施例結合之數個實施例,此處所述之數個實施例可用以顯示器PVD,舉例為用於顯示器市場之濺射沈積於大面積基板上。The name "substrate" as used herein may include a non-flexible substrate and a flexible substrate. The flexible substrate is exemplified by a glass substrate, a wafer, a transparent wafer such as sapphire or the like, or a glass plate. The flexible substrate is, for example, a web or a foil. According to several embodiments, which can be combined with other embodiments described herein, the various embodiments described herein can be used for display PVD, for example for sputtering deposition on a large area substrate.

綜上所述,雖然本發明已以實施例揭露如上,然其並非用以限定本發明。本發明所屬技術領域中具有通常知識者,在不脫離本發明之精神和範圍內,當可作各種之更動與潤飾。因此,本發明之保護範圍當視後附之申請專利範圍所界定者為準。In conclusion, the present invention has been disclosed in the above embodiments, but it is not intended to limit the present invention. A person skilled in the art can make various changes and modifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims.

10‧‧‧基板10‧‧‧Substrate

20‧‧‧遮蔽裝置20‧‧‧shading device

23‧‧‧開孔或孔23‧‧‧ openings or holes

30‧‧‧沈積源30‧‧‧Sedimentary source

32‧‧‧路徑32‧‧‧ Path

34‧‧‧紅色像素34‧‧‧Red Pixels

36‧‧‧綠色像素36‧‧‧Green pixels

38‧‧‧藍色像素38‧‧‧Blue pixels

40‧‧‧垂直方向40‧‧‧Vertical direction

50、60‧‧‧水平方向50, 60‧‧‧ horizontal direction

200‧‧‧遮罩組件200‧‧‧mask assembly

210‧‧‧載體210‧‧‧ Carrier

310‧‧‧遮罩支撐件310‧‧‧Mask support

450‧‧‧箭頭450‧‧‧ arrow

510‧‧‧遮罩框架510‧‧‧mask frame

515‧‧‧緊固件515‧‧‧fasteners

522‧‧‧第一框架元件522‧‧‧First frame element

524‧‧‧第二框架元件524‧‧‧Second frame element

526‧‧‧第三框架元件526‧‧‧ Third frame component

528‧‧‧第四框架元件528‧‧‧Fourth frame component

610、615‧‧‧磁性單元610, 615‧‧‧ magnetic unit

620、625、821、822、823、824、825、915、925‧‧‧磁性懸浮力620, 625, 821, 822, 823, 824, 825, 915, 925 ‧ ‧ magnetic levitation force

630、640‧‧‧上邊緣630, 640‧‧‧ upper edge

642、652、742、752‧‧‧參考軸642, 652, 742, 752‧‧‧ reference axis

650‧‧‧下邊緣650‧‧‧ lower edge

692‧‧‧第一方向692‧‧‧First direction

694‧‧‧第二方向694‧‧‧second direction

910‧‧‧第一組磁性懸浮力910‧‧‧The first set of magnetic levitation forces

912、914‧‧‧測量裝置912, 914‧‧‧ measuring devices

920‧‧‧第二組磁性懸浮力920‧‧‧Second group of magnetic levitation forces

1000‧‧‧設備1000‧‧‧ equipment

1010‧‧‧控制單元1010‧‧‧Control unit

1120‧‧‧處理腔室1120‧‧‧Processing chamber

1210‧‧‧第一被動磁性單元1210‧‧‧First passive magnetic unit

對本技術領域中具有通常知識者而言,充分及能夠實施之本揭露係更特別是提供於本說明的其餘部份,本說明的其餘部份包括參照所附之圖式,其中: 第1圖繪示用以製造OLED之沈積製程的示意圖; 第2圖繪示在水平定向中之遮罩組件的示意圖; 第3圖繪示在水平定向中之遮罩組件的示意圖,遮罩組件包括遮罩支撐件; 第4圖繪示在垂直定向中之遮罩組件的示意圖; 第5圖繪示在垂直定向中之遮罩組件的示意圖,遮罩組件包括遮罩支撐件; 第6-7圖繪示根據此處所述實施例之方法的示意圖; 第8a-b圖繪示藉由數個磁性懸浮力提供之載體的變形的示意圖; 第9a-b圖繪示根據此處所述實施例之方法的示意圖;以及 第10-12圖繪示根據此處所述實施例之設備的示意圖。The disclosures that are sufficient and capable of being implemented by those of ordinary skill in the art are more particularly provided for the remainder of the description, and the remainder of the description includes reference to the accompanying drawings, in which: FIG. A schematic diagram showing a deposition process for fabricating an OLED; FIG. 2 is a schematic diagram of a mask assembly in a horizontal orientation; and FIG. 3 is a schematic diagram of a mask assembly in a horizontal orientation, the mask assembly including a mask Figure 4 is a schematic view of the mask assembly in a vertical orientation; Figure 5 is a schematic view of the mask assembly in a vertical orientation, the mask assembly including the mask support; Figure 6-7 A schematic diagram showing a method according to the embodiments described herein; FIGS. 8a-b are schematic views showing deformation of a carrier provided by a plurality of magnetic levitation forces; and FIGS. 9a-b are diagrams showing embodiments according to the embodiments herein A schematic of the method; and Figures 10-12 illustrate schematic views of an apparatus in accordance with embodiments described herein.

Claims (20)

一種方法,包括: 非接觸懸浮一遮罩組件(200),該遮罩組件包括一載體(210)及一遮蔽裝置(20),該遮蔽裝置由該載體支撐;以及 當該遮罩組件係非接觸懸浮時,控制該載體之一形狀。A method comprising: a non-contact suspension-mask assembly (200), the mask assembly comprising a carrier (210) and a shielding device (20) supported by the carrier; and when the mask assembly is non- When contacting the suspension, one of the shapes of the carrier is controlled. 如申請專利範圍第1項所述之方法,其中該遮罩組件係藉由複數個磁性懸浮力(620, 920)非接觸懸浮,該載體之該形狀係藉由控制該些磁性懸浮力來控制。The method of claim 1, wherein the mask assembly is non-contact suspended by a plurality of magnetic levitation forces (620, 920), the shape of the carrier being controlled by controlling the magnetic levitation forces . 如申請專利範圍第2項所述之方法,其中該些磁性懸浮力之至少二磁性懸浮力具有不同的大小。The method of claim 2, wherein the at least two magnetic levitation forces of the magnetic levitation forces have different sizes. 如申請專利範圍第1項所述之方法,其中該控制該載體之該形狀包括提供該載體之一變形。The method of claim 1, wherein the controlling the shape of the carrier comprises providing a deformation of the carrier. 如申請專利範圍第2項所述之方法,其中該控制該載體之該形狀包括提供該載體之一變形。The method of claim 2, wherein controlling the shape of the carrier comprises providing a deformation of the carrier. 如申請專利範圍第3項所述之方法,其中該控制該載體之該形狀包括提供該載體之一變形。The method of claim 3, wherein the controlling the shape of the carrier comprises providing a deformation of the carrier. 如申請專利範圍第1至6項之任一者所述之方法,其中該載體之該形狀係控制以對準該遮蔽裝置。The method of any one of claims 1 to 6, wherein the shape of the carrier is controlled to align the screening device. 如申請專利範圍第1至6項之任一者所述之方法,其中該遮罩組件更包括一遮罩支撐件(310),該遮蔽裝置連接於該遮罩支撐件,該遮罩支撐件連接於該載體。The method of any one of claims 1 to 6, wherein the mask assembly further comprises a mask support (310), the shielding device being coupled to the mask support, the mask support Connected to the carrier. 如申請專利範圍第8項所述之方法,其中該遮罩支撐件係為一遮罩框架(510)。The method of claim 8, wherein the mask support is a mask frame (510). 如申請專利範圍第8項所述之方法,其中該載體之該形狀係控制以補償該遮罩支撐件之一變形。The method of claim 8, wherein the shape of the carrier is controlled to compensate for deformation of one of the mask supports. 如申請專利範圍第9項所述之方法,其中該載體之該形狀係控制以補償該遮罩支撐件之一變形。The method of claim 9, wherein the shape of the carrier is controlled to compensate for deformation of one of the mask supports. 如申請專利範圍第8項所述之方法,其中該遮罩支撐件係為一遮罩框架(510),該遮罩框架包括一第一框架元件(522),其中該載體之該形狀係控制以對準該第一框架元件於一實質上水平方向。The method of claim 8, wherein the mask support is a mask frame (510), the mask frame comprising a first frame member (522), wherein the shape of the carrier is controlled Aligning the first frame member in a substantially horizontal direction. 如申請專利範圍第10項所述之方法,其中該遮罩支撐件係為一遮罩框架(510),該遮罩框架包括一第一框架元件(522),其中該載體之該形狀係控制以對準該第一框架元件於一實質上水平方向。The method of claim 10, wherein the mask support is a mask frame (510), the mask frame comprising a first frame member (522), wherein the shape of the carrier is controlled Aligning the first frame member in a substantially horizontal direction. 如申請專利範圍第1至6項之任一者所述之方法,其中該載體之該形狀係藉由複數個非接觸力專門地控制。The method of any one of claims 1 to 6, wherein the shape of the carrier is specifically controlled by a plurality of non-contact forces. 一種方法,包括: 藉由第一組磁性懸浮力(910)非接觸懸浮一第一遮罩組件,該第一遮罩組件包括一第一載體及一第一遮蔽裝置,該第一遮蔽裝置由該第一載體支撐; 當該第一遮罩組件由該第一組磁性懸浮力非接觸懸浮時,測量該第一遮蔽裝置之一對準; 計算一第二組磁性懸浮力(920);以及 藉由該第二組磁性懸浮力非接觸懸浮一遮罩組件,該遮罩組件包括一載體及一遮蔽裝置,該遮蔽裝置由該載體支撐,其中該遮罩組件係為該第一遮罩組件或一第二遮罩組件; 其中該第二組磁性懸浮力提供該載體之一變形。A method includes: non-contact suspension of a first mask assembly by a first set of magnetic levitation forces (910), the first mask assembly including a first carrier and a first shielding device, the first shielding device The first carrier support; measuring the alignment of one of the first shielding devices when the first mask assembly is non-contact suspended by the first set of magnetic levitation forces; calculating a second set of magnetic levitation forces (920); The mask assembly includes a carrier and a shielding device supported by the carrier by the second set of magnetic levitation force non-contact suspension mask assembly, wherein the mask assembly is the first mask assembly Or a second mask assembly; wherein the second set of magnetic levitation forces provides deformation of one of the carriers. 如申請專利範圍第15項所述之方法,其中該第二組磁性懸浮力之至少二磁性懸浮力具有不同大小。The method of claim 15, wherein the at least two magnetic levitation forces of the second set of magnetic levitation forces have different sizes. 如申請專利範圍第15及16項之任一者所述之方法,更包括: 從至少測量之該第一遮蔽裝置之該對準決定該第一遮蔽裝置之該形狀與一目標形狀之一偏差。The method of any one of claims 15 and 16, further comprising: determining, from the at least the alignment of the first screening device, the deviation of the shape of the first shielding device from a target shape . 一種設備(1000),包括: 一磁性懸浮系統,包括複數個磁性單元(610); 一遮罩組件(200),包括一載體(210)及一遮蔽裝置(20),該遮蔽裝置由該載體支撐;以及 一控制單元(1010),連接於該些磁性單元; 其中該設備係裝配以用於在該遮罩組件非接觸懸浮時控制該載體之一形狀。A device (1000) comprising: a magnetic suspension system comprising a plurality of magnetic units (610); a mask assembly (200) comprising a carrier (210) and a screening device (20), the shielding device being supported by the carrier Supporting; and a control unit (1010) coupled to the magnetic units; wherein the apparatus is assembled for controlling the shape of one of the carriers when the mask assembly is in non-contact suspension. 如申請專利範圍第18項所述之設備,其中該控制單元係裝配,以用於在該遮罩組件非接觸懸浮時控制該載體之該形狀。The apparatus of claim 18, wherein the control unit is assembled for controlling the shape of the carrier when the mask assembly is in non-contact suspension. 如申請專利範圍第18及19項之任一者所述之設備,更包括一或多個測量裝置(912, 914),裝配以用於測量該遮蔽裝置之一對準。The apparatus of any one of claims 18 and 19, further comprising one or more measuring devices (912, 914) configured to measure alignment of one of the screening devices.
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