TW201929060A - Tape expansion apparatus and tape expansion method - Google Patents
Tape expansion apparatus and tape expansion method Download PDFInfo
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- TW201929060A TW201929060A TW107131065A TW107131065A TW201929060A TW 201929060 A TW201929060 A TW 201929060A TW 107131065 A TW107131065 A TW 107131065A TW 107131065 A TW107131065 A TW 107131065A TW 201929060 A TW201929060 A TW 201929060A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/79—Apparatus for Tape Automated Bonding [TAB]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/86—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using tape automated bonding [TAB]
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- Manufacturing & Machinery (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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Abstract
Description
發明領域 本發明是有關於一種在將貼附有接合薄膜(DAF：Die Attach Film)之半導體晶圓等板狀的被加工物分割成多數個半導體晶片等之時使用的膠帶擴張裝置及膠帶擴張方法。FIELD OF THE INVENTION The present invention relates to a tape expansion device and a tape expansion device used when a plate-shaped workpiece such as a semiconductor wafer to which a bonding film (DAF: Die Attach Film) is attached is divided into a plurality of semiconductor wafers. method.
發明背景 在半導體器件製造工序中，是使用對半導體晶圓等板狀的被加工物進行分割的分割裝置。作為此種的分割裝置，已知有：藉由雷射加工在被加工物的內部中連續地形成沿著分割預定線的改質層，並且藉由施加外力，而將強度下降的改質層作為起點來對被加工物進行分割的構成(例如，參照專利文獻1)。BACKGROUND OF THE INVENTION In a semiconductor device manufacturing process, a dividing device is used which divides a plate-shaped workpiece such as a semiconductor wafer. As such a dividing device, a reformed layer along a predetermined division line is continuously formed in a workpiece by laser processing, and a reformed layer having a reduced strength by applying an external force is known. A structure that divides a workpiece as a starting point (for example, refer to Patent Document 1).
作為在被加工物的分割之時施加外力的設備，已知有一種使貼附在被加工物的背面之擴張膠帶擴張的膠帶擴張裝置。藉由擴張膠帶的擴張，對被加工物施加擴張方向的力量，以使被加工物沿著分割預定線而斷裂。此種的擴張裝置已知有：在使擴張膠帶的黏著劑冷卻硬化的狀態下，進行擴張膠帶的擴張與被加工物的分割，接著，朝加熱設備搬送，來對因為擴張而鬆弛的擴張膠帶進行加熱而使其收縮的構成(例如，參照專利文獻2)。尤其在貼附有晶粒接合用之接合薄膜即DAF的被加工物中，是藉由冷卻使DAF硬化，藉此便可明顯地提升擴張膠帶擴張時的分割效率。 先前技術文獻 專利文獻As a device that applies an external force when the workpiece is divided, there is known a tape expansion device that expands an expansion tape attached to the back of the workpiece. Due to the expansion of the expansion tape, a force in the expansion direction is applied to the workpiece so that the workpiece breaks along a predetermined division line. In such an expansion device, it is known to expand the expansion tape and divide the object to be processed in a state where the adhesive of the expansion tape is cooled and hardened, and then convey it to a heating device to slacken the expansion tape due to expansion. The structure which heats and shrinks (for example, refer patent document 2). In particular, in a workpiece to which DAF, which is a bonding film for die bonding, is attached, the DAF is hardened by cooling, thereby significantly improving the division efficiency when the expansion tape is expanded. Prior Art Literature Patent Literature
專利文獻1：日本專利特許第3408805號公報 專利文獻1：日本專利特開2010-206136號公報Patent Document 1: Japanese Patent No. 3408805 Patent Document 1: Japanese Patent Laid-Open No. 2010-206136
發明概要 發明欲解決之課題 在如上述之擴張膠帶的擴張裝置或擴張方法中，因為是在被加工物的分割後，在擴張膠帶鬆弛的狀態下搬送至加熱設備，所以恐有已分離之狀態的器件(半導體晶片等)在搬送時移動而互相干涉，導致發生邊緣崩角(edge chipping)之虞。SUMMARY OF THE INVENTION The problem to be solved by the invention is that in the expansion device or expansion method of the expansion tape described above, after the object to be processed is divided, the expansion tape is transported to the heating device in a state where the expansion tape is loosened. The devices (semiconductor wafers, etc.) move during transportation and interfere with each other, which may cause edge chipping.
本發明是有鑒於像這樣的問題點而作成的發明，其目的在於以一種將擴張膠帶擴張來進行晶圓的分割的膠帶擴張裝置及膠帶擴張方法，將已抑制住邊緣崩角等之良好的分割加以實現。 用以解決課題之手段The present invention has been made in view of such problems, and an object of the present invention is to provide a tape expansion device and a tape expansion method for dividing a wafer by expanding an expansion tape, and suppressing edge chipping and the like. Segmentation is achieved. Means to solve the problem
本發明是一種膠帶擴張裝置，是用於將貼附有晶圓並且外周部裝設在環狀框架的擴張膠帶擴張，晶圓在藉由複數個分割預定線所劃分的區域上形成有複數個器件，膠帶擴張裝置之特徵在於：具備：框架保持設備，在貼附於擴張膠帶的晶圓為朝向垂直向下的狀態下，於上表面保持環狀框架；推壓設備，在框架保持設備與晶圓的外周緣之間，從上方環狀地推壓擴張膠帶來加以擴張，以沿著分割起點對晶圓進行分割；冷卻台，可升降地配設在環狀之推壓設備的內周側，並且在隔著擴張膠帶遍及晶圓整面而抵接的抵接面上具有吸引孔；及加熱設備，對在框架保持設備與晶圓的外周緣之間伸長的擴張膠帶進行加熱而使其收縮。The present invention is a tape expansion device for expanding an expansion tape to which a wafer is attached and an outer peripheral portion is mounted on a ring frame, and a plurality of wafers are formed on a region divided by a plurality of predetermined division lines. The device and the tape expansion device are characterized by having: a frame holding device that holds a ring-shaped frame on the upper surface when the wafer attached to the expansion tape faces vertically downward; a pressing device, and the frame holding device and the Between the outer periphery of the wafer, the expansion tape is pushed annularly from above to expand, so as to divide the wafer along the dividing starting point; the cooling stage is arranged on the inner periphery of the ring-shaped pushing equipment in a lifting manner Side, and has a suction hole on the abutting surface which abuts across the entire surface of the wafer through the expansion tape; and a heating device that heats the expansion tape extended between the frame holding device and the outer peripheral edge of the wafer so that Its shrinking.
本發明也是一種膠帶擴張方法，是使用上述之膠帶擴張裝置的膠帶擴張方法，其特徵在於：具有：保持步驟，在晶圓為朝向垂直向下的狀態下，保持環狀框架，以使擴張膠帶的背面位在冷卻台的抵接面的下方；擴張膠帶冷卻步驟，在實施保持步驟後，使擴張膠帶的背面抵接於冷卻台的抵接面，並且使吸引力作用在吸引孔，以對擴張膠帶進行冷卻；擴張膠帶擴張步驟，使框架保持設備與推壓設備相對移動，而將擴張膠帶擴張；及加熱步驟，在使冷卻台的抵接面抵接於擴張膠帶背面並且使吸引力作用在吸引孔的狀態下，藉由加熱設備對在框架保持設備與晶圓的外周緣之間伸長的擴張膠帶進行加熱而使其收縮。The present invention is also a tape expansion method, which is a tape expansion method using the above-mentioned tape expansion device, and is characterized in that it has a holding step of holding the ring frame in a state where the wafer is oriented vertically downward so as to make the expansion tape The back of the expansion tape is located below the abutting surface of the cooling stage; in the expansion tape cooling step, after the holding step is performed, the back of the expansion tape is brought into contact with the abutting surface of the cooling stage, and the attractive force acts on the suction hole to The expansion tape is cooled; the expansion tape expansion step moves the frame holding device and the pressing device relatively to expand the expansion tape; and the heating step causes the abutting surface of the cooling stage to abut the back of the expansion tape and make the attraction force act In a state where the holes are attracted, the expansion tape extended between the frame holding device and the outer peripheral edge of the wafer is heated by a heating device to shrink it.
依據以上的膠帶擴張裝置及膠帶擴張方法，從藉由冷卻台使擴張膠帶冷卻來對晶圓進行分割的工序，到以加熱收縮來使擴張膠帶的鬆弛減少的工序為止，都是在具備冷卻台或者框架保持設備之共通的載台上進行。因此，不須在擴張膠帶鬆弛的狀態下進行晶圓的搬送即可完成，可以盡量抑制成為邊緣崩角等之原因的器件之移動。又，藉由將針對擴張膠帶的冷卻分割用與加熱收縮用的載台設定為共通，可以將裝置的設置面積縮小，從而可以追求空間效率的提升。 發明效果According to the above-mentioned tape expansion device and tape expansion method, a cooling stage is provided from the step of dividing the wafer by cooling the expansion tape by a cooling stage to the step of reducing the slack of the expansion tape by heating and shrinking. Alternatively, it is performed on a common carrier of the frame holding device. Therefore, it is not necessary to carry out the wafer transfer in a state where the expansion tape is loosened, and it is possible to suppress the movement of the device which causes the edge chipping and the like as much as possible. In addition, by setting the stages for cooling division and heating and shrinking of the expansion tape in common, the installation area of the device can be reduced, and space efficiency can be improved. Invention effect
如以上，依據本發明之膠帶擴張裝置及膠帶擴張方法，對於晶圓，可以將已抑制住邊緣崩角等之良好的分割加以實現。As described above, according to the tape expansion device and the tape expansion method of the present invention, it is possible to realize a good division of the wafer with suppressed chipping and the like.
用以實施發明之形態 以下，參照附加圖式，針對本實施形態的膠帶擴張裝置及膠帶擴張方法來進行說明。圖1至圖5是依序地顯示膠帶擴張裝置中之各工序的圖，圖6是俯視膠帶擴張裝置之局部的構成要素的圖。在以下的說明中，將垂直向上的方向設定為上方，且將垂直向下的方向設定為下方。再者，膠帶擴張裝置並非限定於此構成的裝置，可以在發明之要旨的範圍內加以適當地變更。Modes for Carrying Out the Invention The tape expansion device and the tape expansion method of the present embodiment will be described below with reference to the attached drawings. FIG. 1 to FIG. 5 are diagrams sequentially showing each step in the tape expansion device, and FIG. 6 is a diagram showing components of the tape expansion device in plan view. In the following description, a vertically upward direction is set to be upward, and a vertically downward direction is set to be downward. In addition, the tape expansion device is not limited to this structure, and can be appropriately changed within the scope of the gist of the invention.
本實施形態的膠帶擴張裝置20是一種將構成晶圓單元10的環狀框架11加以保持，並且使環狀框架11所支撐的擴張膠帶12擴張，藉此來使貼附於擴張膠帶12的DAF(Die Attach Film)17及晶圓13分割的構成。DAF17是具有黏著性的接合薄膜，並且積層在晶圓13的背面側。晶圓13是隔著DAF17貼附在擴張膠帶12。將擴張膠帶12之中支撐晶圓13及DAF17之側設定為正面，且將其相反側設定為背面。The tape expansion device 20 of this embodiment is a DAF that holds the ring-shaped frame 11 constituting the wafer unit 10 and expands the expansion tape 12 supported by the ring-shaped frame 11. (Die Attach Film) 17 and wafer 13 are divided. DAF17 is an adhesive bonding film, and is laminated on the back side of the wafer 13. The wafer 13 is attached to the expansion tape 12 via the DAF 17. The side supporting the wafer 13 and the DAF 17 in the expansion tape 12 is set to the front side, and the opposite side is set to the back side.
環狀框架11是以金屬所形成的環狀體，並且在環狀框架11的中央形成有圓形的開口14，該開口14是藉由可彈性變形之擴張膠帶12所覆蓋。擴張膠帶12的外周部分是固定在環狀框架11的背面側，並且在不與環狀框架11重疊之開口14的內側區域中，擴張膠帶12是貼附在晶圓13之背面側的DAF17。晶圓13的外周緣與環狀框架11的內周緣(開口14的緣部)之間具有徑向的間隙。The ring frame 11 is a ring body made of metal, and a circular opening 14 is formed in the center of the ring frame 11, and the opening 14 is covered with an elastically deformable expansion tape 12. The outer peripheral portion of the expansion tape 12 is fixed to the back side of the ring frame 11, and in the area inside the opening 14 that does not overlap the ring frame 11, the expansion tape 12 is a DAF 17 attached to the back side of the wafer 13. There is a radial gap between the outer peripheral edge of the wafer 13 and the inner peripheral edge (the edge portion of the opening 14) of the ring frame 11.
晶圓13是半導體器件晶圓等。晶圓13的正面設有交錯成格子狀的複數個分割預定線(圖示省略)，且在藉由分割預定線所劃分的各區域上形成有半導體晶片等的器件。又，在晶圓13的內部，形成有沿著分割預定線成為分割起點的改質層15(參照圖1至圖3)。改質層15是一種藉由雷射的照射而成為晶圓13之內部的密度、折射率、機械強度或者其他物理特性與周圍相異的狀態，使得強度比周圍更低的區域。再者，在本實施形態中是舉例改質層15作為分割起點，但分割起點只要是使晶圓13的強度下降並且可成為分割時的起點即可，亦可是例如雷射加工溝、切削溝、切割道(scribe line)。The wafer 13 is a semiconductor device wafer or the like. A plurality of predetermined division lines (not shown) staggered in a grid pattern are provided on the front surface of the wafer 13, and devices such as a semiconductor wafer are formed in each region divided by the predetermined division lines. Further, a reforming layer 15 (see FIGS. 1 to 3) is formed inside the wafer 13 as a starting point of division along a planned division line. The modified layer 15 is a state where the density, refractive index, mechanical strength, or other physical characteristics of the wafer 13 inside the wafer 13 are different from those of the surroundings by laser irradiation, so that the intensity is lower than the surroundings. In this embodiment, the modified layer 15 is used as an example of the division starting point. However, the division starting point may be a point at which the strength of the wafer 13 is reduced and can be used as a starting point for division. For example, a laser processing groove or a cutting groove may be used. , Scribe line.
如圖1至圖5所示，膠帶擴張裝置20具備有：基台21、框架保持設備22、推壓設備23、冷卻台24、暫時放置載台25、框架把持爪26、及加熱設備27。基台21是對膠帶擴張裝置20的各部分進行支撐之非可動部分，圖1至圖5所示之上方基台部21A與下方基台部21B是構成基台21整體之局部的構成。As shown in FIGS. 1 to 5, the tape expansion device 20 includes a base table 21, a frame holding device 22, a pressing device 23, a cooling table 24, a temporary placement stage 25, a frame holding claw 26, and a heating device 27. The base 21 is a non-movable part that supports each part of the tape expansion device 20. The upper base portion 21A and the lower base portion 21B shown in FIGS. 1 to 5 are a part of the entire base 21.
框架保持設備22具有環狀的形狀，並且具備：可以從下方保持晶圓單元10之環狀框架11的上表面30、及大小與環狀框架11之開口14對應的開口31。框架保持設備22是可以透過升降驅動機構32在上下方向升降地被支撐。升降驅動機構32是被下方基台部21B所支撐，並且在朝向上方延伸之支撐桿33的前端支撐框架保持設備22。藉由內建於升降驅動機構32的馬達或者致動器的驅動來使支撐桿33的突出量變化，而可以使框架保持設備22升降。The frame holding device 22 has a ring shape, and includes an upper surface 30 of the ring frame 11 capable of holding the wafer unit 10 from below, and an opening 31 having a size corresponding to the opening 14 of the ring frame 11. The frame holding device 22 is supported in a vertical direction by a lifting driving mechanism 32. The lift driving mechanism 32 is supported by the lower base portion 21B and supports the frame holding device 22 at the front end of the support rod 33 extending upward. The frame holding device 22 can be raised and lowered by changing the protrusion amount of the support rod 33 by driving a motor or an actuator built in the lift driving mechanism 32.
推壓設備23具有環狀的形狀，前端朝向下方並且被上方基台部21A所支撐，該環狀的形狀是比晶圓13更大徑長並且比環狀框架11之開口14的內周緣更小徑長。推壓設備23是相對於上方基台部21A而被固定，並且不會進行往上下方向的移動。在推壓設備23的下表面(前端)，可遍及整個圓周轉動地設有複數個滾輪35。The pressing device 23 has a ring shape with the front end facing downward and is supported by the upper base portion 21A. The ring shape is larger in diameter than the wafer 13 and more than the inner periphery of the opening 14 of the ring frame 11. The trail is long. The pressing device 23 is fixed to the upper base portion 21A, and does not move in the vertical direction. A plurality of rollers 35 are provided on the lower surface (front end) of the pressing device 23 so as to be rotatable over the entire circumference.
冷卻台24位於環狀的推壓設備23的內周側，並且是將位於上側的上部支撐體36與位於下側的下部支撐體37重疊而構成。在圖1中將冷卻台24的局部擴大來顯示。在上部支撐體36的下表面形成有環狀突出部36a，該環狀突出部36a是朝向下方突出的圓環狀的突出部。在環狀突出部36a的內周側形成有圓形的凹部36b。上部支撐體36與下部支撐體37是在使環狀突出部36a抵接於下部支撐體37的上表面之狀態下被組合。在凹部36b所在的徑向的中央部分中，上部支撐體36與下部支撐體37是互相拉開距離而形成間隙。The cooling stage 24 is located on the inner peripheral side of the ring-shaped pressing device 23, and is configured by overlapping the upper support body 36 on the upper side and the lower support body 37 on the lower side. A part of the cooling stage 24 is enlarged and shown in FIG. 1. An annular protrusion 36 a is formed on the lower surface of the upper support body 36, and the annular protrusion 36 a is an annular protrusion protruding downward. A circular recessed portion 36b is formed on the inner peripheral side of the annular protruding portion 36a. The upper support body 36 and the lower support body 37 are combined in a state where the annular protruding portion 36 a is in contact with the upper surface of the lower support body 37. In the radial center portion where the recessed portion 36 b is located, the upper support body 36 and the lower support body 37 are separated from each other to form a gap.
在冷卻台24中的下部支撐體37的下表面側設有板狀網眼材38。板狀網眼材38的直徑與晶圓13的直徑大致相同，並且在板狀網眼材38的整體形成有複數個細微的吸引孔38a(參照圖1中的冷卻台24的擴大部分)。又，在下部支撐體37的下表面，於板狀網眼材38之外周側的區域上，形成有環狀的吸引溝39。A plate-shaped mesh member 38 is provided on the lower surface side of the lower support 37 in the cooling stage 24. The diameter of the plate-shaped mesh material 38 is substantially the same as the diameter of the wafer 13, and a plurality of fine suction holes 38 a are formed in the entirety of the plate-shaped mesh material 38 (see the enlarged portion of the cooling stage 24 in FIG. 1). A ring-shaped suction groove 39 is formed on the lower surface of the lower support 37 in a region on the outer peripheral side of the plate-shaped mesh material 38.
構成冷卻台24的上部支撐體36、下部支撐體37、及板狀網眼材38各自是藉由熱傳導性優異的金屬所形成。本實施形態中的上部支撐體36與下部支撐體37是以鋁所形成，板狀網眼材38是以不銹鋼材所形成。再者，構成冷卻台24之各部分的材質並不限於此。Each of the upper support body 36, the lower support body 37, and the plate-shaped mesh material 38 constituting the cooling stage 24 is formed of a metal having excellent thermal conductivity. In this embodiment, the upper support body 36 and the lower support body 37 are formed of aluminum, and the plate-shaped mesh material 38 is formed of a stainless steel material. In addition, the material of each part constituting the cooling stage 24 is not limited to this.
在冷卻台24的下表面(抵接面)側具備使吸引力作用的吸引設備40與吸引設備41。吸引設備40具有從吸引源40a持續至板狀網眼材38的吸引路，並且在該吸引路的途中具備有控制閥40b。當驅動吸引源40a而使控制閥40b為連通狀態時，吸引力會在板狀網眼材38的複數個吸引孔38a上運作。當使控制閥40b為非連通狀態時，吸引力變得不會作用在板狀網眼材38的吸引孔38a上。吸引設備41具有從吸引源41a持續至吸引溝39的吸引路，並且在該吸引路的途中具備有控制閥41b。當驅動吸引源41a而使控制閥41b為連通狀態時，吸引力會在吸引溝39上運作。當使控制閥41b為非連通狀態時，吸引力變得不會作用在吸引溝39上。也就是，在冷卻台24中，可以對板狀網眼材38與吸引溝39個別地進行吸引力的開閉。A suction device 40 and a suction device 41 are provided on the lower surface (abutment surface) side of the cooling stage 24 to cause a suction force. The suction device 40 has a suction path that continues from the suction source 40a to the plate-shaped mesh member 38, and includes a control valve 40b in the middle of the suction path. When the suction source 40 a is driven and the control valve 40 b is in a connected state, the suction force operates on the plurality of suction holes 38 a of the plate-shaped mesh material 38. When the control valve 40 b is in a non-connected state, the suction force does not act on the suction hole 38 a of the plate-shaped mesh member 38. The suction device 41 has a suction path that continues from the suction source 41a to the suction groove 39, and includes a control valve 41b in the middle of the suction path. When the suction source 41 a is driven and the control valve 41 b is in a connected state, the suction force operates on the suction groove 39. When the control valve 41 b is turned off, the suction force does not act on the suction groove 39. That is, in the cooling stage 24, the plate-shaped mesh material 38 and the suction groove 39 can be opened and closed individually by suction.
冷卻台24是藉由冷卻設備42進行冷卻。冷卻設備42具有連接於上部支撐體36的上表面中央之冷卻傳達部43，並且可以藉由冷卻源(圖示省略)使冷卻傳達部43成為冷卻(低溫)狀態。冷卻設備42中的冷卻源可以是任何一種構成。作為冷卻方式，例如可以適當選擇使用壓縮機的類型或是使用帕耳帖元件(Peltier element)的類型等。又，設置冷卻源的位置可以是在冷卻傳達部43的上部，亦可是遠離冷卻傳達部43的位置。在將冷卻源配置於遠離冷卻傳達部43的位置的情況下，可以透過管路將冷氣從冷卻源引導至冷卻傳達部43。The cooling stage 24 is cooled by a cooling device 42. The cooling device 42 includes a cooling transmitting portion 43 connected to the center of the upper surface of the upper support 36, and the cooling transmitting portion 43 can be brought into a cooled (low temperature) state by a cooling source (not shown). The cooling source in the cooling device 42 may have any configuration. As the cooling method, for example, a type using a compressor or a type using a Peltier element can be appropriately selected. The cooling source may be provided at a position above the cooling transmitting portion 43 or at a position remote from the cooling transmitting portion 43. When the cooling source is arranged at a position remote from the cooling transmitting section 43, the cold air can be guided from the cooling source to the cooling transmitting section 43 through a pipe.
當在冷卻設備42中對冷卻傳達部43進行冷卻時，會從冷卻傳達部43所連接的上部支撐體36的中央附近，朝向上部支撐體36的外周方向放射狀地傳播冷卻狀態，並透過位於上部支撐體36之外周附近的環狀突出部36a，對下部支撐體37傳播冷卻狀態。在下部支撐體37中，則是與上部支撐體36相反，是從接觸於環狀突出部36a的外周側朝向中央傳播冷卻狀態。因此，在冷卻台24中，可以對徑向之大致整體均等地進行冷卻。伴隨著下部支撐體37的冷卻，設置於下部支撐體37的下表面之板狀網眼材38也會被冷卻。因為上部支撐體36、下部支撐體37、及板狀網眼材38各自是以熱傳導性優異的金屬所形成，所以可以迅速且有效率地進行冷卻。When cooling the cooling transmitting portion 43 in the cooling device 42, the cooling state is propagated radially from the vicinity of the center of the upper support 36 connected to the cooling transmitting portion 43 toward the outer peripheral direction of the upper support 36, and is transmitted through The annular support portion 36 a near the outer periphery of the upper support body 36 propagates a cooled state to the lower support body 37. In the lower support body 37, the cooling state propagates from the outer peripheral side in contact with the annular protruding portion 36a toward the center, as opposed to the upper support body 36. Therefore, in the cooling stage 24, it is possible to uniformly cool substantially the entire radial direction. As the lower support body 37 is cooled, the plate-shaped mesh material 38 provided on the lower surface of the lower support body 37 is also cooled. Since the upper support body 36, the lower support body 37, and the plate-shaped mesh material 38 are each formed of a metal having excellent thermal conductivity, cooling can be performed quickly and efficiently.
冷卻台24是可以透過升降驅動機構50在上下方向升降地被支撐。升降驅動機構50是被上方基台部21A的下表面側所支撐，並且在朝向下方延伸之支撐桿51的前端支撐冷卻台24。藉由內建於升降驅動機構50的馬達或者致動器的驅動來使支撐桿51的突出量變化，而可以使冷卻台24升降。當冷卻台24往上方移動時，如圖4所示，冷卻台24會進入環狀的推壓設備23的內側，而可以使板狀網眼材38的下表面比滾輪35的前端(下端)位於更上方。冷卻設備42的冷卻傳達部43是與冷卻台24一起升降。The cooling stage 24 is supported by the elevating drive mechanism 50 so as to be able to move up and down in the vertical direction. The elevating drive mechanism 50 is supported by the lower surface side of the upper base portion 21A, and supports the cooling stage 24 at the front end of the support rod 51 extending downward. The cooling stage 24 can be raised and lowered by changing the protrusion amount of the support rod 51 by driving a motor or an actuator built in the lift driving mechanism 50. When the cooling stage 24 moves upward, as shown in FIG. 4, the cooling stage 24 will enter the inside of the ring-shaped pressing device 23, so that the lower surface of the plate-shaped mesh material 38 can be made more than the front end (lower end) of the roller 35. Located further up. The cooling transmitting section 43 of the cooling device 42 is raised and lowered together with the cooling stage 24.
在上下方向中的上方基台部21A與下方基台部21B之間的位置上設有一對的暫時放置載台25。如圖6所示，各暫時放置載台25具有於水平方向上延伸的細長形狀，並且互相大致平行地配置。一對的暫時放置載台25各自可以藉由載台驅動機構55在水平方向與上下方向移動。雖然在圖式中是示意地顯示載台驅動機構55，但載台驅動機構55具備有水平方向驅動用的致動器與上下方向驅動用的致動器等。藉由水平方向的移動，一對的暫時放置載台25的間隔會改變，可以在位於圖1及圖6所示之接近位置的一對的暫時放置載台25上，支撐晶圓單元10的環狀框架11。各暫時放置載台25具有可以對環狀框架11的外緣部進行支撐之上下2段的支撐段部。各支撐段部具有從下方支撐環狀框架11的支撐面25a、25b，並且在支撐面25a、25b的側邊形成有往上下方向延伸的壁部25c。藉由將環狀框架11夾持在一對的暫時放置載台25的壁部25c之間，可以決定晶圓單元10的水平方向的位置。如圖6所示，框架保持設備22具有對位在接近位置之一對的暫時放置載台25不會造成干涉而可以升降的形狀。A pair of temporary placement stages 25 are provided at positions between the upper base portion 21A and the lower base portion 21B in the vertical direction. As shown in FIG. 6, each temporary placement stage 25 has an elongated shape extending in the horizontal direction, and is arranged substantially parallel to each other. Each of the pair of temporarily placed stages 25 can be moved in the horizontal direction and the vertical direction by the stage driving mechanism 55. Although the stage driving mechanism 55 is shown schematically in the drawings, the stage driving mechanism 55 includes an actuator for horizontal driving, an actuator for vertical driving, and the like. By moving in the horizontal direction, the interval between the pair of temporarily placed stages 25 can be changed, and the wafer unit 10 can be supported on the pair of temporarily placed stages 25 at the close positions shown in FIGS. 1 and 6. Ring frame 11. Each temporary placement stage 25 has a support section which can support the outer edge portion of the ring frame 11 by two steps. Each support segment has support surfaces 25a and 25b that support the annular frame 11 from below, and wall portions 25c extending in the up-down direction are formed on the sides of the support surfaces 25a and 25b. The position of the wafer unit 10 in the horizontal direction can be determined by sandwiching the ring-shaped frame 11 between a pair of wall portions 25 c of the temporary placement stage 25. As shown in FIG. 6, the frame holding device 22 has a shape that can be raised and lowered without causing interference with one of the temporarily placed stages 25 aligned in one of the proximity positions.
使用省略圖示的搬入出機構，來進行往膠帶擴張裝置20搬入晶圓單元10與從膠帶擴張裝置20搬出晶圓單元10。在搬入及搬出之時，是在搬入出機構與暫時放置載台25之間進行晶圓單元10的移交。The loading and unloading mechanism (not shown) is used to carry in and out of the wafer unit 10 into and from the tape expansion device 20. At the time of loading and unloading, the wafer unit 10 is transferred between the loading and unloading mechanism and the temporary placement stage 25.
框架把持爪26是在圓周方向上變換位置而設置有複數個。一個個的框架把持爪26是可以相對於基台21旋動地被支撐，並且藉由旋動而可以在把持解除位置(圖1、圖2、圖4、圖5、圖6的一點鏈線)與把持位置(圖3、圖6的實線)上動作。框架把持爪26在把持解除位置中與晶圓單元10的保持無關，而在把持位置中變得可以從下方保持環狀框架11的外緣附近。如圖6所示，在圓周方向之中存在有框架把持爪26的區域中，形成為環狀的框架保持設備22是變成具有局部性缺口的形狀，並且框架保持設備22不與框架把持爪26干涉而可以升降。A plurality of frame holding claws 26 are provided while changing positions in the circumferential direction. Each of the frame gripping claws 26 is rotatably supported with respect to the base 21, and can be rotated at the one-point chain line in the grip release position (FIG. 1, FIG. 2, FIG. 4, FIG. 5, and FIG. 6). ) And the grip position (solid lines in Figs. 3 and 6). The frame holding claw 26 is irrelevant to the holding of the wafer unit 10 in the holding release position, and it becomes possible to hold the vicinity of the outer edge of the annular frame 11 from below in the holding position. As shown in FIG. 6, in a region where the frame holding claws 26 are present in the circumferential direction, the frame holding device 22 formed in a ring shape becomes a shape having a local cutout, and the frame holding device 22 is not in contact with the frame holding claws 26. Interfering to lift.
加熱設備27是藉由從上端部分噴出高溫的溫風，而進行對擴張膠帶12之熱供給的溫風加熱器。在圓周方向上變換位置而配置有複數個加熱設備27。各加熱設備27在徑向中，比框架保持設備22位於更內徑側並且比冷卻台24位於更外徑側，且在上下方向中，比推壓設備23或者冷卻台24位於更下方。各加熱設備27是可以透過升降驅動機構56在上下方向升降地被支撐。升降驅動機構56是被下方基台部21B所支撐，並且在朝向上方延伸之支撐桿57的前端支撐加熱設備27。藉由內建於升降驅動機構56的馬達或者致動器的驅動來使支撐桿57的突出量變化，而可以使加熱設備27升降。The heating device 27 is a warm air heater that supplies heat to the expansion tape 12 by blowing high-temperature warm air from an upper end portion. A plurality of heating devices 27 are arranged while changing positions in the circumferential direction. Each heating device 27 is located on the inner diameter side than the frame holding device 22 and on the outer diameter side than the cooling table 24 in the radial direction, and is located below the pressing device 23 or the cooling table 24 in the vertical direction. Each heating device 27 is supported by a vertical drive mechanism 56 so that it can move up and down in the vertical direction. The elevating driving mechanism 56 is supported by the lower base portion 21B, and supports the heating device 27 at the front end of the support rod 57 extending upward. The heating device 27 can be raised and lowered by changing the protrusion amount of the support rod 57 by driving a motor or an actuator built in the lift driving mechanism 56.
對藉由具備以上之構成的膠帶擴張裝置20進行晶圓13之分割的工序進行說明。首先，在預先藉由雷射加工等將成為分割起點的改質層15形成在晶圓13之後，使用省略圖示的搬入出機構，將晶圓單元10搬送至膠帶擴張裝置20。此時，如圖1所示，晶圓單元10是在使隔著DAF17而貼附在擴張膠帶12的晶圓13垂直向下的狀態下，令環狀框架11被支撐於位在接近位置之一對的暫時放置載台25之下側的支撐段部(支撐面25a)上。藉由一對的暫時放置載台25的壁部25c夾住環狀框架11的外緣部，而決定晶圓單元10的位置。更詳細而言，如圖1所示，環狀框架11的開口14與晶圓13的外緣部之間的環狀的區域(擴張膠帶12未貼附有環狀框架11、晶圓13及DAF17之任一構件的區域)是位於環狀的推壓設備23的下方。又，框架保持設備22的上表面30位於環狀框架11的下方，加熱設備27位於環狀框架11與晶圓13之間的擴張膠帶12之露出部分的下方。框架保持設備22與加熱設備27各自是保持在相對於晶圓單元10往下方拉開距離之待機狀態的位置。冷卻台24的位置被設定成會使板狀網眼材38的下表面與滾輪35的前端成為大致相同之上下方向位置。A process of dividing the wafer 13 by the tape expansion device 20 having the above configuration will be described. First, after the reforming layer 15 which is the starting point of division is formed on the wafer 13 by laser processing or the like in advance, the wafer unit 10 is transferred to the tape expansion device 20 using a loading / unloading mechanism (not shown). At this time, as shown in FIG. 1, the wafer unit 10 is such that the ring frame 11 is supported at a close position with the wafer 13 attached to the expansion tape 12 across the DAF 17 vertically downward. A pair of temporarily placed support sections (support surfaces 25a) on the lower side of the stage 25. The position of the wafer unit 10 is determined by sandwiching the outer edge portion of the ring frame 11 with a pair of wall portions 25 c of the temporary placement stage 25. More specifically, as shown in FIG. 1, the annular region between the opening 14 of the annular frame 11 and the outer edge portion of the wafer 13 (the expansion tape 12 is not attached with the annular frame 11, the wafer 13, and The area of any one of the members of DAF 17) is located below the annular pressing device 23. The upper surface 30 of the frame holding device 22 is located below the ring frame 11, and the heating device 27 is located below the exposed portion of the expansion tape 12 between the ring frame 11 and the wafer 13. Each of the frame holding device 22 and the heating device 27 is held in a standby state in which the frame holding device 22 and the heating device 27 are pulled downward with respect to the wafer unit 10. The position of the cooling stage 24 is set so that the lower surface of the plate-shaped mesh member 38 and the front end of the roller 35 may be substantially the same in the up-down position.
接著，實施保持步驟。如圖2所示，在保持步驟中，是驅動升降驅動機構32，而使框架保持設備22從圖1所示之下方的待機位置往上方移動。因為框架保持設備22具有不與位在接近位置之一對的暫時放置載台25重疊的形狀(參照圖6)，所以框架保持設備22可以不被暫時放置載台25妨礙而上升。然後，框架保持設備22的上表面30抵接於環狀框架11的下表面，框架保持設備22將晶圓單元10往上方上推。在進行由框架保持設備22進行之環狀框架11的上推的階段中，驅動載台驅動機構55而使一對的暫時放置載台25往水平方向拉開距離(參照圖2)。框架保持設備22是上升至直到擴張膠帶12的背面抵接於冷卻台24的下表面為止的位置。若框架保持設備22上升至該位置，便會使框架把持爪26從把持解除位置旋動至把持位置。藉此，變成框架把持爪26從下方保持環狀框架11的狀態(參照圖3)。若將環狀框架11的保持移交至框架把持爪26，便會驅動升降驅動機構32而使框架保持設備22往下方移動規定量(參照圖3)。Next, a holding step is performed. As shown in FIG. 2, in the holding step, the elevating driving mechanism 32 is driven, and the frame holding device 22 is moved upward from the lower standby position shown in FIG. 1. Since the frame holding device 22 does not overlap the temporary placement stage 25 (see FIG. 6), the frame holding device 22 can be raised without being hindered by the temporary placement stage 25. Then, the upper surface 30 of the frame holding device 22 abuts the lower surface of the ring-shaped frame 11, and the frame holding device 22 pushes the wafer unit 10 upward. In the stage of pushing up the ring-shaped frame 11 by the frame holding device 22, the stage driving mechanism 55 is driven to pull the pair of temporarily placed stages 25 apart in a horizontal direction (see FIG. 2). The frame holding device 22 is raised to a position until the back surface of the expansion tape 12 abuts the lower surface of the cooling stage 24. When the frame holding device 22 is raised to this position, the frame holding claw 26 is rotated from the holding release position to the holding position. As a result, the frame holding claw 26 holds the ring frame 11 from below (see FIG. 3). When the holding of the ring-shaped frame 11 is transferred to the frame holding claw 26, the lifting driving mechanism 32 is driven to move the frame holding device 22 downward by a predetermined amount (see FIG. 3).
在擴張膠帶12的背面抵接於冷卻台24的下表面的狀態下(圖2、圖3)，實施擴張膠帶冷卻步驟。在擴張膠帶冷卻步驟中，是一邊使吸引設備40與吸引設備41各自為吸引狀態，一邊藉由冷卻設備42來對冷卻台24進行冷卻。具體而言，藉由驅動吸引源40a、41a而使控制閥40b、41b為連通狀態，由吸引設備40所產生之吸引力會作用在板狀網眼材38的吸引孔38a上，且由吸引設備41所產生之吸引力會作用在吸引溝39上。構成冷卻台24的下表面之板狀網眼材38是與晶圓13大致相同徑長，板狀網眼材38的下表面整體是抵接於擴張膠帶12之中對晶圓13及DAF17之貼附區域的背面側。換句話說，板狀網眼材38的下表面是隔著擴張膠帶12遍及晶圓13及DAF17之整面而抵接。吸引溝39是在晶圓13及DAF17的周緣區域中與擴張膠帶12的背面相對向。然後，藉由在板狀網眼材38的吸引孔38a與吸引溝39上各自作用的吸引設備40與吸引設備41之吸引力，擴張膠帶12的背面會被吸附保持於冷卻台24的下表面。The expansion tape cooling step is performed in a state where the back surface of the expansion tape 12 is in contact with the lower surface of the cooling stage 24 (FIGS. 2 and 3). In the expansion tape cooling step, the cooling device 24 is cooled by the cooling device 42 while the suction device 40 and the suction device 41 are each in a suction state. Specifically, the control valves 40b and 41b are connected to each other by driving the suction sources 40a and 41a, and the suction generated by the suction device 40 acts on the suction holes 38a of the plate-shaped mesh 38, The attraction generated by the device 41 acts on the attraction groove 39. The plate-shaped mesh material 38 constituting the lower surface of the cooling stage 24 is approximately the same diameter as the wafer 13, and the entire lower surface of the plate-shaped mesh material 38 abuts against the wafer 13 and the DAF 17 in the expansion tape 12. Back side of the attachment area. In other words, the lower surface of the plate-shaped mesh material 38 is in contact with the entire surface of the wafer 13 and the DAF 17 through the expansion tape 12. The suction groove 39 faces the back surface of the expansion tape 12 in the peripheral regions of the wafer 13 and the DAF 17. Then, by the attraction of the suction device 40 and the suction device 41 acting on the suction holes 38 a and the suction grooves 39 of the plate-shaped mesh material 38, the back surface of the expansion tape 12 is adsorbed and held on the lower surface of the cooling stage 24. .
晶圓單元10的擴張膠帶12、晶圓13及DAF17是藉由被吸附保持於處在冷卻狀態之冷卻台24的下表面而進行冷卻。如先前所述地，冷卻台24具有遍及徑向之大約整體而均等地進行冷卻的構成。又，藉由對設置於冷卻台24之下表面的板狀網眼材38的吸引孔38a與吸引溝39給予吸引力，擴張膠帶12就會遍及冷卻台24之下表面的大約整體而密貼。藉此，可以不偏頗並有效率地對擴張膠帶12、晶圓13、及DAF17進行冷卻。藉由冷卻，作為分割對象的晶圓13與DAF17的伸縮性等之物質性質會變化，且擴張膠帶12的黏著劑與DAF17會硬化，在後述之分割工序(擴張膠帶12的擴張步驟)中，會使晶圓13與DAF17變得容易分割。冷卻台24的冷卻狀態(溫度)是預先設定成可獲得與擴張膠帶12或晶圓13或DAF17材質或者種類對應之最佳的分割效率。The expansion tape 12, the wafer 13, and the DAF 17 of the wafer unit 10 are cooled by being sucked and held on the lower surface of the cooling stage 24 in a cooled state. As described above, the cooling stage 24 has a structure that uniformly cools the entire surface in the radial direction. In addition, by attracting the suction holes 38a and the suction grooves 39 of the plate-shaped mesh material 38 provided on the lower surface of the cooling stage 24, the expansion tape 12 is closely adhered throughout the entire lower surface of the cooling stage 24. . Thereby, the expansion tape 12, the wafer 13, and the DAF 17 can be efficiently cooled without bias. By cooling, the physical properties such as the stretchability of the wafer 13 and the DAF 17 that are to be divided are changed, and the adhesive and the DAF 17 of the expansion tape 12 are hardened. Will make wafer 13 and DAF17 easy to divide. The cooling state (temperature) of the cooling stage 24 is set in advance so as to obtain an optimal division efficiency corresponding to the material or type of the expansion tape 12, the wafer 13, or the DAF 17.
如圖2或圖3所示，在擴張膠帶冷卻步驟中，冷卻台24的下表面與設置於推壓設備23之複數個滾輪35的下端是位在大致相同高度位置，各滾輪35是處在對擴張膠帶12的背面(環狀框架11的開口14的內緣部與晶圓13的外緣部之間的區域)輕微接觸的狀態。又，框架把持爪26是將環狀框架11保持在與晶圓13相同高度位置上。因此，擴張膠帶12是從貼附在晶圓13之中央部分到貼附在環狀框架11之外周部為止的整體都保持平坦，使擴張膠帶12擴張的外力並不會作用。As shown in FIG. 2 or FIG. 3, in the expansion tape cooling step, the lower surface of the cooling stage 24 and the lower end of the plurality of rollers 35 provided on the pressing device 23 are located at approximately the same height position, and each of the rollers 35 is at The state where the back surface of the expansion tape 12 (the area between the inner edge portion of the opening 14 of the ring-shaped frame 11 and the outer edge portion of the wafer 13) is slightly in contact. The frame holding claw 26 holds the ring-shaped frame 11 at the same height position as the wafer 13. Therefore, the entirety of the expansion tape 12 from the central portion attached to the wafer 13 to the outer peripheral portion of the ring frame 11 is kept flat, and the external force for expanding the expansion tape 12 does not act.
當擴張膠帶12、晶圓13、及DAF17充份地冷卻時，即實施擴張膠帶擴張步驟(圖4)。如圖4所示，在擴張膠帶擴張步驟中，是使控制閥40b與控制閥41b各自為非連通狀態，來解除由吸引設備40與吸引設備41進行之吸引。又，驅動升降驅動機構50，使冷卻台24往上方移動而從擴張膠帶12的背面拉開距離。藉此，可以在對冷卻台24之吸附已解除的狀態下，使擴張膠帶12確實地擴張。When the expansion tape 12, the wafer 13, and the DAF 17 are sufficiently cooled, the expansion tape expansion step is performed (FIG. 4). As shown in FIG. 4, in the expansion tape expansion step, the control valve 40 b and the control valve 41 b are each in a non-connected state to release the suction by the suction device 40 and the suction device 41. In addition, the elevating driving mechanism 50 is driven to move the cooling stage 24 upward and pull away from the rear surface of the expansion tape 12 by a distance. Accordingly, the expansion tape 12 can be reliably expanded in a state where the adsorption to the cooling stage 24 is released.
作為其他形態，也可以在將吸引設備40與吸引設備41各自作成為除了吸引之外還可以噴出空氣的構成之後，不如圖4所示地使冷卻台24往上方移動，而是一邊使空氣從吸引孔38a與吸引溝39噴出，一邊實施擴張膠帶擴張步驟。可以藉由空氣的噴出，來防止擴張膠帶12對冷卻台24的密貼。As another form, after the suction device 40 and the suction device 41 are each configured to eject air in addition to suction, the cooling stage 24 may not be moved upward as shown in FIG. The suction hole 38a and the suction groove 39 are ejected, and the expansion tape expansion step is performed. It is possible to prevent the adhesion of the expansion tape 12 to the cooling stage 24 by spraying air.
然後，驅動升降驅動機構32，使框架保持設備22從圖3所示之位置以高速往上方移動。當框架保持設備22上升規定量時，上表面30會從下方對環狀框架11抵接，成為從框架保持設備22往環狀框架11傳達力量的狀態。從相對於以框架把持爪26保持的環狀框架11往下方拉開距離的位置(圖3)，開始框架保持設備22的上升，藉此便可猛烈地以高速進行從框架保持設備22對環狀框架11的上推。如先前所述地，因為框架保持設備22是形成為不與框架把持爪26干涉的形狀，所以可以在如圖3所示地持續以框架把持爪26保持環狀框架11的狀態下，使框架保持設備22的上表面30抵接於環狀框架11。當成為環狀框架11是藉由框架保持設備22而被上推的狀態時，框架把持爪26就會從把持位置旋動至把持解除位置。Then, the elevating driving mechanism 32 is driven to move the frame holding device 22 upward at a high speed from the position shown in FIG. 3. When the frame holding device 22 is raised by a predetermined amount, the upper surface 30 abuts on the ring frame 11 from below, and a state in which power is transmitted from the frame holding device 22 to the ring frame 11 is obtained. Starting from the position where the ring frame 11 held by the frame holding claw 26 is lowered downward (FIG. 3), the frame holding device 22 is started to rise, whereby the ring from the frame holding device 22 can be violently moved at a high speed. The frame 11 is pushed up. As described previously, because the frame holding device 22 is formed in a shape that does not interfere with the frame holding claw 26, the frame can be held in a state where the ring frame 11 is continuously held by the frame holding claw 26 as shown in FIG. The upper surface 30 of the holding device 22 abuts on the ring frame 11. When the ring-shaped frame 11 is pushed up by the frame holding device 22, the frame holding claw 26 is rotated from the holding position to the holding release position.
如圖4所示，當已使上表面30抵接於環狀框架11之狀態的框架保持設備22進一步往上方移動時，相對於環狀框架11被上推，擴張膠帶12之中位於環狀框架11之內側的區域會被環狀的推壓設備23的滾輪35壓住，而被限制往上方的移動(從推壓設備23環狀地承受推壓力)。藉由此框架保持設備22與推壓設備23的相對移動，擴張膠帶12中的DAF17及晶圓13的貼附區域會被拉伸而往徑向擴張(伸長)。如此一來，往擴徑方向的外力會對晶圓13與DAF17運作，從而以形成於晶圓13內的改質層15(圖1至圖3)為起點，在晶圓13與DAF17的厚度方向產生裂縫。給予外力直到裂縫從晶圓13的正面貫通DAF17的背面(貼附於擴張膠帶12的面)為止，便可分割成沿著分割預定線之一個個的晶片16及DAF17(參照圖4)。如上述，晶圓13與DAF17的分割效率是藉由冷卻來提升，可以進行沿著分割預定線之確實的分割。尤其是藉由冷卻來使在常溫中不易分割的DAF17硬化這點，對於分割效率的提升極為有效。As shown in FIG. 4, when the frame holding device 22 having the upper surface 30 abutted on the ring frame 11 is moved further upward, it is pushed up relative to the ring frame 11, and the expansion tape 12 is located in the ring shape. The area inside the frame 11 is pressed by the roller 35 of the ring-shaped pressing device 23 and restricted from moving upward (the ring device receives the pressing force from the pressing device 23). As a result of the relative movement of the frame holding device 22 and the pressing device 23, the application areas of the DAF 17 and the wafer 13 in the expansion tape 12 are stretched to expand (elongate) in the radial direction. In this way, the external force in the direction of diameter expansion will operate on the wafer 13 and DAF17, so as to start with the modified layer 15 (Figures 1 to 3) formed in the wafer 13 and the thickness of the wafer 13 and the DAF17. Cracks in the direction. An external force is applied until the crack penetrates from the front surface of the wafer 13 to the back surface of the DAF 17 (the surface affixed to the expansion tape 12), and then it can be divided into the wafers 16 and the DAF 17 along the predetermined division line (see FIG. 4). As described above, the division efficiency of the wafer 13 and the DAF 17 is improved by cooling, and the division can be surely performed along the predetermined division line. In particular, the fact that DAF17, which is difficult to divide at normal temperature, is hardened by cooling, is extremely effective for improving the division efficiency.
當進行晶圓13的分割時，會從沿著分割預定線而斷裂的部分產生分割屑。因為晶圓13與DAF17是垂直向下地設置，所以分割屑會自然地往下方掉落，可以防止分割屑往分割後之晶片16(圖4)的正面或者擴張膠帶12附著。掉落的分割屑是藉由省略圖示的回收設備來進行回收。When the wafer 13 is divided, division debris is generated from a portion broken along a predetermined division line. Since the wafer 13 and the DAF 17 are arranged vertically downward, the swarf will naturally fall downward, which can prevent the swarf from adhering to the front of the singulated wafer 16 (FIG. 4) or the expansion tape 12. The fallen pieces of debris are collected by a collection device (not shown).
若晶圓13與DAF17的分割結束，將使在先前之擴張膠帶擴張步驟(參照圖4)中被往上方拉上的冷卻台24，下降至冷卻台24的下表面會與推壓設備23的複數個滾輪35的下端位置大概一致的高度位置。如此一來，下部支撐體37與板狀網眼材38的下表面會抵接於擴張膠帶12的背面。在此狀態下，將控制閥40b與控制閥41b切換至連通狀態，而藉由吸引設備40與吸引設備41使吸引力作用在吸引孔38a與吸引溝39，以使擴張膠帶12密貼於下部支撐體37與板狀網眼材38的下表面。藉由擴張膠帶12被密貼於冷卻台24側，使得已分割的各晶片16及DAF17維持拉開距離的狀態。再者，在此階段中，不進行由冷卻設備42進行之冷卻台24的冷卻，冷卻台24只是為了擴張膠帶12的吸附而使用。If the division of wafer 13 and DAF17 is completed, the cooling stage 24 that was pulled upward in the previous expansion tape expansion step (refer to FIG. 4) will be lowered to the lower surface of the cooling stage 24 and the pressing device 23 will The lower end positions of the plurality of rollers 35 are approximately the same height positions. In this way, the lower surfaces of the lower support body 37 and the plate-shaped mesh material 38 are brought into contact with the back surface of the expansion tape 12. In this state, the control valve 40b and the control valve 41b are switched to a communication state, and the suction device 40 and the suction device 41 make the suction force act on the suction hole 38a and the suction groove 39, so that the expansion tape 12 adheres to the lower portion. The lower surface of the support body 37 and the plate-shaped mesh material 38. The expansion tape 12 is closely adhered to the cooling stage 24 side, so that the divided wafers 16 and the DAF 17 are maintained in the opened state. Furthermore, at this stage, cooling of the cooling stage 24 by the cooling equipment 42 is not performed, and the cooling stage 24 is used only to expand the adsorption of the adhesive tape 12.
接著，驅動升降驅動機構32使框架保持設備22下降，而解除對擴張膠帶12給予擴張方向的外力。如圖5所示，在擴張膠帶擴張步驟中伸長後的擴張膠帶12上會產生鬆弛。此擴張膠帶12的鬆弛是在藉由來自吸引孔38a與吸引溝39的吸引力而密貼於冷卻台24之區域的外側，也就是在比分割後的晶片16及DAF17更外緣側的區域，成為因自體重量而相對於環狀框架11朝向下方垂下的形狀而出現。Next, the elevating drive mechanism 32 is driven to lower the frame holding device 22 and release the external force applied to the expansion tape 12 in the expansion direction. As shown in FIG. 5, the expansion tape 12 stretched in the expansion tape expansion step is loosened. The slackness of the expansion tape 12 is outside of the region which is closely adhered to the cooling stage 24 by the attraction force from the suction hole 38a and the suction groove 39, that is, a region on the outer edge side of the divided wafer 16 and DAF17. It appears as a shape that hangs downward with respect to the ring frame 11 due to its own weight.
接著，實施加熱步驟(參照圖5)，該加熱步驟是使在擴張膠帶擴張步驟中伸長的擴張膠帶12進行加熱收縮。加熱設備27是位於擴張膠帶12之鬆弛部分的下方，在進行加熱之時，是驅動升降驅動機構56使加熱設備27上升來接近擴張膠帶12。然後，在如圖5所示地將與擴張膠帶12之間的距離設為適當的狀態下，從加熱設備27朝向擴張膠帶12之鬆弛部分噴出高溫(作為一例，為100℃以上)的溫風。以此溫風而加熱的擴張膠帶12會熱收縮而減少鬆弛。Next, a heating step (refer to FIG. 5) is performed, in which the expansion tape 12 stretched in the expansion tape expansion step is heat-shrinked. The heating device 27 is located under the slack portion of the expansion tape 12. When heating, the heating device 27 is driven to raise and lower the heating device 27 to approach the expansion tape 12. Then, as shown in FIG. 5, the distance from the expansion tape 12 is set to an appropriate state, and hot air with a high temperature (for example, 100 ° C. or higher) is blown from the heating device 27 toward the loose portion of the expansion tape 12. . The expansion tape 12 heated by this warm air shrinks thermally and reduces slack.
此時，因為吸引力遍及冷卻台24之下表面的大致整體而作用，所以至少在比設有吸引溝39的部分更內徑側的區域中，擴張膠帶12不會朝向下方垂下而是密貼於冷卻台24側。因此，可以使成為熱收縮之對象的擴張膠帶12的垂下，確實地位在可藉由加熱設備27有效率地進行加熱的區域(比晶圓13更外徑側的區域)。又，因為貼附有分割後之晶片16及DAF17的擴張膠帶12的中央部分是密貼於冷卻台24而難以受到由加熱所產生之熱收縮的影響，所以可以防止在加熱時之晶片16彼此的不規則干涉等。At this time, since the attractive force acts on the entire entire lower surface of the cooling stage 24, the expansion tape 12 does not sag downward, but adheres at least in the area on the inner diameter side than the portion where the suction groove 39 is provided. On the cooling stage 24 side. Therefore, it is possible to suspend the expansion tape 12 that is the object of heat shrinkage in a region that can be efficiently heated by the heating device 27 (a region on the outer diameter side than the wafer 13). In addition, since the central portion of the expansion tape 12 to which the divided wafer 16 and the DAF 17 are attached is closely adhered to the cooling stage 24 and is hardly affected by heat shrinkage caused by heating, the wafers 16 can be prevented from being heated to each other during heating. Irregular interference, etc.
再者，在擴張膠帶12之鬆弛較大的情況下，亦可一邊使針對擴張膠帶12的吸引區域改變，一邊階段性地進行加熱。具體而言，首先在使吸引力作用在吸引孔38a與吸引溝39雙方的狀態下，進行由加熱設備27進行之第1階段的加熱。接著，當解除由吸引設備41進行之對吸引溝39的吸引時，伴隨著由冷卻台24所造成之擴張膠帶12的吸附區域的減少，在第1階段的加熱中未能完全去除的擴張膠帶12之鬆弛的剩餘部分會成為往下方的垂下而出現。對擴張膠帶12之該部分進行由加熱設備27進行之第2階段的加熱。像這樣階段性地將擴張膠帶12加熱時，即使在擴張膠帶12之鬆弛較大的情況下，亦可有效率並且確實地使擴張膠帶12進行熱收縮。When the expansion tape 12 has a large slack, it is also possible to heat the expansion tape 12 in stages while changing the suction area for the expansion tape 12. Specifically, first, the first-stage heating by the heating device 27 is performed while the suction force is applied to both the suction hole 38 a and the suction groove 39. Next, when the suction of the suction groove 39 by the suction device 41 is cancelled, with the decrease in the adsorption area of the expansion tape 12 caused by the cooling stage 24, the expansion tape that cannot be completely removed in the first stage of heating The rest of the slack of 12 will appear as a downward sag. This part of the expansion tape 12 is heated in the second stage by the heating device 27. When the expansion tape 12 is heated stepwise in this manner, even when the slack of the expansion tape 12 is large, the expansion tape 12 can be efficiently and reliably thermally contracted.
在加熱設備27上亦可設置像是會使朝向上方吹出之溫風的範圍擴散的噴嘴。又，亦可在加熱設備27上具備可以使溫風之吹出方向改變的可變方向噴嘴。藉由該等構成，可以適當設定由加熱設備27進行之最佳的加熱範圍。The heating device 27 may be provided with a nozzle that diffuses a range of warm air blowing upward. Further, the heating device 27 may be provided with a variable direction nozzle capable of changing the blowing direction of the warm air. With these configurations, an optimum heating range by the heating device 27 can be appropriately set.
又，在本實施形態中，是藉由在圓周方向變換位置來設置複數個加熱設備27，以實現對擴張膠帶12在圓周方向之廣大範圍的加熱。作為變形例，亦可將加熱設備27支撐成不只是相對於基台21進行升降移動，還可在圓周方向上進行移動。藉此，變得容易在與環狀的推壓設備23對應的環狀的區域整體，對擴張膠帶12進行加熱。Further, in this embodiment, a plurality of heating devices 27 are provided by changing positions in the circumferential direction, so as to heat the wide range of the expansion tape 12 in the circumferential direction. As a modification, the heating device 27 may be supported not only to move up and down relative to the base 21 but also to move in the circumferential direction. This makes it easier to heat the expansion tape 12 over the entire annular region corresponding to the annular pressing device 23.
在加熱步驟結束之後，從膠帶擴張裝置20將晶圓單元10往外部搬出。在搬出之時，解除從冷卻台24的吸引孔38a與吸引溝39對擴張膠帶12的吸引。然後，使一對的暫時放置載台25在接近位置(圖1、圖6)，並且驅動升降驅動機構32使框架保持設備22從圖5的位置下降。如此一來，加工完成的晶圓單元10會隨著框架保持設備22下降，環狀框架11會被一對的暫時放置載台25的上側之支撐段部(支撐面25b)所支撐。接著，藉由省略圖示的搬入出機構，將加工完成的晶圓單元10從暫時放置載台25上往膠帶擴張裝置20的外部搬出。因為在先前實施的加熱步驟中已減少擴張膠帶12的鬆弛，所以在從膠帶擴張裝置20搬出時，晶圓單元10上的複數個晶片16不易互相移動，而可以防止分割加工後的邊緣崩角等。After the heating step is completed, the wafer unit 10 is carried out from the tape expansion device 20. At the time of carrying out, the suction of the expansion tape 12 from the suction hole 38a and the suction groove 39 of the cooling stage 24 is released. Then, the pair of temporary placement stages 25 is brought into the approach position (FIGS. 1 and 6), and the lift driving mechanism 32 is driven to lower the frame holding device 22 from the position shown in FIG. 5. In this way, the processed wafer unit 10 is lowered along with the frame holding device 22, and the ring-shaped frame 11 is supported by a pair of support sections (support surfaces 25 b) on the upper side of the temporary placement stage 25. Next, the processed wafer unit 10 is carried out from the temporary placement stage 25 to the outside of the tape expansion device 20 by a loading and unloading mechanism (not shown). Because the slackness of the expansion tape 12 has been reduced in the previously implemented heating step, the plurality of wafers 16 on the wafer unit 10 are not easy to move with each other when being removed from the tape expansion device 20, and the edge chipping after the split processing can be prevented Wait.
在將加工完成的晶圓單元10從一對的暫時放置載台25的上側之支撐段部(支撐面25b)搬出至外部之時，可以將由膠帶擴張裝置20進行之加工前的(接下來要加工的)晶圓單元10搬入至一對的暫時放置載台25的下側之支撐段部(支撐面25a)。因為是一次進行往外部搬出晶圓單元10與從外部搬入晶圓單元10，所以可以盡量減少裝置的停機時間。當各晶圓單元10的搬入與搬出結束時，會變成圖1所示之狀態，可以重複執行以上所說明之一連串的步驟。When the processed wafer unit 10 is carried out from a pair of support sections (supporting surfaces 25 b) on the temporary placement stage 25 to the outside, the processing before the processing by the tape expansion device 20 (the next step is to The processed) wafer unit 10 is carried into a pair of support section portions (support surfaces 25 a) below the temporary placement stage 25. Since the wafer unit 10 is carried out to and from the outside at one time, the downtime of the apparatus can be minimized. When the loading and unloading of each wafer unit 10 is completed, the state shown in FIG. 1 is obtained, and a series of steps described above can be repeatedly performed.
如以上，在本實施形態的膠帶擴張裝置20中，從晶圓13與DAF17之分割前所實施的擴張膠帶12的冷卻，到晶圓13與DAF17之分割後所實施的擴張膠帶12的加熱為止，都是在具備框架保持設備22或者冷卻台24之共通的載台上進行。也就是，不須在擴張膠帶12之鬆弛已產生的狀態下，將晶圓單元10搬送至另外設置的加熱裝置，而可以防止起因於晶片16之互相移動的邊緣崩角等，以實現良好的分割。又，省略用於將晶圓單元10搬送至另外設置的加熱裝置的時間，也有助於晶圓分割加工整體中的產出量提升。又，藉由在共通的載台上實施對擴張膠帶12的冷卻與加熱，來將裝置整體的設置面積縮小，從而可以追求設置空間的效率化。As described above, in the tape expansion device 20 of this embodiment, the cooling from the expansion tape 12 performed before the wafer 13 and the DAF 17 is divided to the heating of the expansion tape 12 performed after the wafer 13 and the DAF 17 are divided. Both are performed on a common carrier provided with the frame holding device 22 or the cooling station 24. That is, it is not necessary to transfer the wafer unit 10 to a separate heating device in a state where the slack of the expansion tape 12 has occurred, and it is possible to prevent edge chipping and the like caused by the mutual movement of the wafer 16 to achieve a good segmentation. In addition, omitting the time for transporting the wafer unit 10 to a separate heating device also contributes to an increase in the throughput in the entire wafer dividing process. In addition, by cooling and heating the expansion tape 12 on a common stage, the installation area of the entire device can be reduced, and the efficiency of the installation space can be pursued.
本實施形態的膠帶擴張裝置20在擴張膠帶擴張步驟中(圖4)，雖然是不使推壓設備23移動而是使框架保持設備22上升，但亦可採用使推壓設備23下降以使擴張膠帶12擴張的構成。也就是，只要是藉由推壓設備與框架保持設備的相對移動來進行膠帶擴張的構成即可。In the expansion tape expansion step (FIG. 4) of the tape expansion device 20 of this embodiment, although the pressing device 23 is not moved but the frame holding device 22 is raised, the pressing device 23 may be lowered to expand. The expanded configuration of the adhesive tape 12. That is, any configuration may be adopted as long as the tape is expanded by the relative movement of the pressing device and the frame holding device.
在本實施形態中，雖然是使用對擴張膠帶12吹上高溫的溫風之加熱設備27，但加熱設備的構成並不限定於此。例如，亦可具備如下類型的加熱設備，即，一種具備可以對擴張膠帶直接地接觸的抵接部分，且對該抵接部分進行加熱的加熱設備。In the present embodiment, although the heating device 27 is used which blows high-temperature warm air to the expansion tape 12, the configuration of the heating device is not limited to this. For example, a heating device may be provided, which is a heating device including a contact portion capable of directly contacting the expansion tape and heating the contact portion.
適用本發明而進行分割的晶圓(被加工物)的材質或者形成於晶圓上的器件的種類等並無限定。例如，作為被加工物方面，除了半導體器件晶圓以外，亦可使用光器件晶圓、封裝基板、半導體基板、無機材料基板、氧化物晶圓、生陶瓷基板、及壓電基板等各種工件。作為半導體器件晶圓方面，可使用器件形成後之矽晶圓或化合物半導體晶圓。作為光器件晶圓方面，可使用器件形成後之藍寶石晶圓或碳化矽晶圓。又，作為封裝基板方面，可使用CSP(晶片尺寸封裝，Chip Size Package)基板，作為半導體基板方面，可使用矽或砷化鎵等，作為無機材料基板方面，可使用藍寶石、陶瓷、玻璃等。此外，作為氧化物晶圓方面，可使用器件形成後或器件形成前的鉭酸鋰、鈮酸鋰。The material of the wafer (to-be-processed object) to which the present invention is divided and the type of devices formed on the wafer are not limited. For example, in addition to the semiconductor device wafer, various workpieces such as an optical device wafer, a package substrate, a semiconductor substrate, an inorganic material substrate, an oxide wafer, a green ceramic substrate, and a piezoelectric substrate can be used as the object to be processed. As the semiconductor device wafer, a silicon wafer or a compound semiconductor wafer after device formation can be used. As the optical device wafer, a sapphire wafer or a silicon carbide wafer after device formation can be used. In addition, as a package substrate, a CSP (Chip Size Package) substrate can be used, as a semiconductor substrate, silicon or gallium arsenide can be used, and as an inorganic material substrate, sapphire, ceramic, glass, or the like can be used. In addition, as the oxide wafer, lithium tantalate or lithium niobate can be used after device formation or before device formation.
又，雖然已說明本發明的各實施形態，但作為本發明的其他實施形態，亦可為將上述實施形態及變形例整體地或者部分地組合而成之形態。In addition, although each embodiment of the present invention has been described, as another embodiment of the present invention, a form in which the above-mentioned embodiment and modified examples are wholly or partially combined may be used.
又，本發明之實施形態並不限定於上述之實施形態及變形例，且亦可在不脫離本發明之技術思想的主旨的範圍內進行各種變更、置換、變形。此外，若能經由技術之進步或衍生之其他技術而以其他的方式來實現本發明之技術思想的話，亦可使用該方法來實施。因此，申請專利範圍涵蓋了可包含在本發明之技術思想的範圍內的所有的實施形態。 産業上之可利用性In addition, the embodiment of the present invention is not limited to the above-mentioned embodiments and modifications, and various changes, replacements, and modifications can be made without departing from the gist of the technical idea of the present invention. In addition, if the technical idea of the present invention can be realized in other ways through technological progress or other derived technologies, this method can also be used for implementation. Therefore, the scope of patent application covers all embodiments that can be included in the scope of the technical idea of the present invention. Industrial availability
如以上所說明，依據本發明之膠帶擴張裝置及膠帶擴張方法，可以防止晶圓分割後的邊緣崩角等，有助於器件的製造誤差降低及生產性提升。As described above, according to the tape expansion device and the tape expansion method of the present invention, it is possible to prevent edge chipping and the like after wafer singulation, which contributes to reduction of device manufacturing errors and improvement of productivity.
10‧‧‧晶圓單元10‧‧‧ Wafer Unit
11‧‧‧環狀框架11‧‧‧ ring frame
12‧‧‧擴張膠帶12‧‧‧Expansion Tape
13‧‧‧晶圓13‧‧‧ wafer
14、31‧‧‧開口14, 31‧‧‧ opening
15‧‧‧改質層15‧‧‧Modified layer
16‧‧‧晶片16‧‧‧Chip
17‧‧‧DAF17‧‧‧DAF
20‧‧‧膠帶擴張裝置20‧‧‧Tape expansion device
21‧‧‧基台21‧‧‧ abutment
21A‧‧‧上方基台部21A‧‧‧Upper Abutment Section
21B‧‧‧下方基台部21B‧‧‧ Lower Abutment Section
22‧‧‧框架保持設備22‧‧‧Frame holding equipment
23‧‧‧推壓設備23‧‧‧Pushing equipment
24‧‧‧冷卻台24‧‧‧ Cooling Station
25‧‧‧暫時放置載台25‧‧‧Temporarily placing a carrier
25a、25b‧‧‧支撐面25a, 25b ‧‧‧ support surface
25c‧‧‧壁部25c‧‧‧Wall
26‧‧‧框架把持爪26‧‧‧Frame gripper
27‧‧‧加熱設備27‧‧‧Heating equipment
30‧‧‧上表面30‧‧‧ Top surface
32、50、56‧‧‧升降驅動機構32, 50, 56‧‧‧ Lifting drive mechanism
33、51、57‧‧‧支撐桿33, 51, 57‧‧‧ support rod
35‧‧‧滾輪35‧‧‧roller
36‧‧‧上部支撐體36‧‧‧ Upper support
36a‧‧‧環狀突出部36a‧‧‧ annular protrusion
36b‧‧‧凹部36b‧‧‧Concave
37‧‧‧下部支撐體37‧‧‧lower support
38‧‧‧板狀網眼材38‧‧‧ Plate Mesh
38a‧‧‧吸引孔38a‧‧‧ suction hole
39‧‧‧吸引溝39‧‧‧Attraction trench
40、41‧‧‧吸引設備40, 41‧‧‧ Attraction equipment
40a、41a‧‧‧吸引源40a, 41a ‧‧‧ Attraction source
40b、41b‧‧‧控制閥40b, 41b‧‧‧Control Valve
42‧‧‧冷卻設備42‧‧‧cooling equipment
43‧‧‧冷卻傳達部43‧‧‧ Cooling Communication Department
55‧‧‧載台驅動機構55‧‧‧stage drive mechanism
圖1是顯示本實施形態之膠帶擴張裝置的截面圖。 圖2是顯示由膠帶擴張裝置進行之保持步驟與擴張膠帶冷卻步驟的截面圖。 圖3是顯示由膠帶擴張裝置進行之擴張膠帶冷卻步驟的截面圖。 圖4是顯示由膠帶擴張裝置進行之擴張膠帶擴張步驟的截面圖。 圖5是顯示由膠帶擴張裝置進行之加熱步驟的截面圖。 圖6是從沿著圖1之VI-VI線的位置俯視膠帶擴張裝置的圖。FIG. 1 is a cross-sectional view showing a tape expansion device of this embodiment. FIG. 2 is a sectional view showing a holding step and a cooling step of the expansion tape performed by the tape expansion device. FIG. 3 is a cross-sectional view showing a cooling step of the expansion tape by the tape expansion device. FIG. 4 is a cross-sectional view showing an expansion tape expansion step by the tape expansion device. FIG. 5 is a cross-sectional view showing a heating step performed by the tape expansion device. FIG. 6 is a plan view of the tape expansion device from a position along a line VI-VI in FIG. 1.
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| Application Number | Priority Date | Filing Date | Title |
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| JP2017192601A JP7030469B2 (en) | 2017-10-02 | 2017-10-02 | Tape expansion device and tape expansion method |
| JP2017-192601 | 2017-10-02 |
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| TW201929060A true TW201929060A (en) | 2019-07-16 |
| TWI760558B TWI760558B (en) | 2022-04-11 |
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| TW107131065A TWI760558B (en) | 2017-10-02 | 2018-09-05 | Tape expansion device and tape expansion method |
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| JP (1) | JP7030469B2 (en) |
| KR (1) | KR102597940B1 (en) |
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| TWI828058B (en) * | 2021-09-14 | 2024-01-01 | 日商山葉發動機股份有限公司 | expansion device |
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| JP7325258B2 (en) * | 2019-08-14 | 2023-08-14 | 株式会社ディスコ | Expanding device |
| CN110729186A (en) * | 2019-10-24 | 2020-01-24 | 东莞记忆存储科技有限公司 | Processing method for wafer cutting and separating |
| CN111267017B (en) * | 2020-03-17 | 2022-05-13 | 华天慧创科技（西安）有限公司 | Support tool for avoiding middle deformation during wafer film coating and working method |
| WO2023209901A1 (en) * | 2022-04-27 | 2023-11-02 | ヤマハ発動機株式会社 | Expanding device, semiconductor chip production method, and semiconductor chip |
| KR102576912B1 (en) * | 2022-10-05 | 2023-09-11 | 제너셈(주) | Detaching structure and detaching apparatus having the same |
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| JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
| JP4793128B2 (en) * | 2006-06-23 | 2011-10-12 | 株式会社デンソー | Semiconductor device manufacturing apparatus and semiconductor device manufacturing method |
| JP2007305687A (en) * | 2006-05-09 | 2007-11-22 | Disco Abrasive Syst Ltd | Dicing method and dicing device of wafer |
| JP5791866B2 (en) | 2009-03-06 | 2015-10-07 | 株式会社ディスコ | Work dividing device |
| JP2011077482A (en) * | 2009-10-02 | 2011-04-14 | Disco Abrasive Syst Ltd | Tape expanding device |
| FR2960094B1 (en) * | 2010-05-12 | 2012-06-08 | St Microelectronics Tours Sas | PROCESS FOR PRODUCING SEMICONDUCTOR CHIPS |
| JP5648512B2 (en) * | 2011-02-08 | 2015-01-07 | トヨタ自動車株式会社 | Expanding method, expanding device, adhesive sheet |
| JP2013041967A (en) * | 2011-08-15 | 2013-02-28 | Disco Abrasive Syst Ltd | Division device |
| JP6249586B2 (en) * | 2011-08-31 | 2017-12-20 | 株式会社東京精密 | Work dividing apparatus and work dividing method |
| JP2015015359A (en) * | 2013-07-04 | 2015-01-22 | 株式会社ディスコ | Method for processing wafer |
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| TWI828058B (en) * | 2021-09-14 | 2024-01-01 | 日商山葉發動機股份有限公司 | expansion device |
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| JP2019067945A (en) | 2019-04-25 |
| TWI760558B (en) | 2022-04-11 |
| KR20190039000A (en) | 2019-04-10 |
| CN109599352A (en) | 2019-04-09 |
| KR102597940B1 (en) | 2023-11-02 |
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| JP7030469B2 (en) | 2022-03-07 |
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