TW201921610A - Semiconductor device and method for producing same - Google Patents

Semiconductor device and method for producing same

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Publication number
TW201921610A
TW201921610A TW107127711A TW107127711A TW201921610A TW 201921610 A TW201921610 A TW 201921610A TW 107127711 A TW107127711 A TW 107127711A TW 107127711 A TW107127711 A TW 107127711A TW 201921610 A TW201921610 A TW 201921610A
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TW
Taiwan
Prior art keywords
semiconductor device
resin
sealing layer
insulating
viscosity
Prior art date
Application number
TW107127711A
Other languages
Chinese (zh)
Other versions
TWI763902B (en
Inventor
佐藤英一
竹森大地
佐藤泉樹
戸川光生
山田和彦
関皓平
Original Assignee
日商日立化成股份有限公司
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Application filed by 日商日立化成股份有限公司 filed Critical 日商日立化成股份有限公司
Publication of TW201921610A publication Critical patent/TW201921610A/en
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Publication of TWI763902B publication Critical patent/TWI763902B/en

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    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
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Abstract

A semiconductor device which comprises: a substrate; a semiconductor element which is arranged on the substrate; a wire which electrically connects the substrate and the semiconductor element with each other; a first sealing layer which seals the space below the tip of the wire; and a second sealing layer which is provided on top of the first sealing layer, with the bonding wire being interposed therebetween. This semiconductor device is configured such that: the first sealing layer is composed of a cured film of a liquid sealing material; and the second sealing layer is composed of a dried coating film of an insulating resin coating material.

Description

半導體元件及其製造方法Semiconductor element and manufacturing method thereof

本揭示的實施形態是有關於一種半導體元件及其製造方法，更詳細而言，是有關於一種藉由利用不同的材料將線的上下方密封而達成薄型化的半導體元件及其製造方法。Embodiments of the present disclosure relate to a semiconductor element and a method for manufacturing the same, and more specifically, to a semiconductor element and a method for manufacturing the semiconductor element that are thinned by sealing the upper and lower sides of the wire with different materials.

近年來，以行動電話為代表，利用半導體元件的電子設備的薄型化正在發展。另外，就安全保護的觀點而言，除基於密碼的安全管理以外，基於生物認證（生物統計（biometric）認證）的管理亦受到關注。例如，行動電話中，採用作為生物認證的一例的指紋認證感測器的機種有增加的傾向。此種新穎的電氣設備正不斷進行開發，另一方面確認到，對於靜電放電（ESD：Electro-static-Discharge），半導體元件的特定部分容易變得脆弱。In recent years, the reduction in thickness of electronic devices using semiconductor devices, including mobile phones, has been progressing. In addition, from the viewpoint of security protection, in addition to password-based security management, management based on biometric authentication (biometric authentication) has also attracted attention. For example, mobile phones tend to increase the number of models using fingerprint authentication sensors as an example of biometric authentication. Such novel electrical equipment is being continuously developed. On the other hand, it has been confirmed that certain parts of semiconductor devices are liable to become vulnerable to electrostatic discharge (ESD: Electro-static-Discharge).

靜電放電（以下稱為ESD）成為半導體元件的損壞或誤動作發生等的一個原因。對於指紋認證感測器，亦無法忽視ESD的影響。因此，針對半導體元件中ESD耐性弱的部分，要求形成絕緣保護層。 另外，伴隨技術科技的進步，要求電子設備及半導體元件的薄型化，因此亦需要絕緣保護層自身的薄型化。 [現有技術文獻] [專利文獻]Electrostatic discharge (hereinafter referred to as ESD) is a cause of damage or malfunction of semiconductor devices. For fingerprint authentication sensors, the influence of ESD cannot be ignored. Therefore, it is required to form an insulating protective layer for a portion where the ESD resistance of the semiconductor element is weak. In addition, along with the advancement of technology, thinning of electronic devices and semiconductor elements is required, and therefore the thickness of the insulating protective layer itself is also required to be thin. [Prior Art Literature] [Patent Literature]

專利文獻1：日本專利特開2013-166925號公報Patent Document 1: Japanese Patent Laid-Open No. 2013-166925

[發明所欲解決之課題] 一般而言，半導體元件中ESD集中的部分成為電荷容易集中的導電性的凸部的部位。例如，將基板與半導體元件電性連接的線的上部、以及電路基板上的金屬壁部分的錐形部（taper）與錐形部之間等的ESD耐性弱。為了提高ESD耐性而於線上部形成絕緣保護層的情況下，由於線的形狀複雜，因此產生若干課題。 首先，於線上部形成絕緣保護層的材料（以下，亦稱為絕緣保護材料）較佳為塗佈後不流向線下部而維持於線上部。即，絕緣保護材料較佳為具有適度的觸變性。 另外，針對絕緣保護層的薄型化的要求，較佳為絕緣保護材料具有優異的絕緣性。特別是就獲得充分的ESD耐性的觀點而言，絕緣保護材料較佳為於成膜後獲得150 kV/mm以上的絕緣破壞電壓的材料。[Problems to be Solved by the Invention] Generally, a portion in which ESD is concentrated in a semiconductor element is a portion of a conductive convex portion where charges are easily concentrated. For example, the ESD resistance of the upper part of the line electrically connecting the substrate and the semiconductor element, and between the tapered portion and the tapered portion of the metal wall portion on the circuit board is weak. In the case where an insulating protective layer is formed on the upper portion of the wire in order to improve ESD resistance, the shape of the wire is complicated, which causes several problems. First, it is preferable that a material (hereinafter, also referred to as an insulating protective material) for forming an insulating protective layer on the upper portion of the wire is kept on the upper portion of the wire without flowing to the lower portion of the wire after coating. That is, it is preferable that the insulation protection material has moderate thixotropy. In addition, in order to reduce the thickness of the insulating protective layer, the insulating protective material preferably has excellent insulating properties. In particular, from the viewpoint of obtaining sufficient ESD resistance, the insulating protective material is preferably a material that obtains a dielectric breakdown voltage of 150 kV / mm or more after film formation.

相對於此，作為絕緣保護材料，例如已知有將聚醯亞胺樹脂作為基質（base）的材料，並根據其使用形態來控制流動性。例如，有為了賦予觸變性而使微細的二氧化矽填料等無機填料或其他有機填料分散於基質樹脂中而成的糊狀的絕緣保護材料。於為了形成絕緣保護層而使用不具有觸變性的液狀的絕緣保護材料的情況下，容易產生藉由塗佈後的流掛等而最需要靜電性保護的線上部的膜厚變薄這一不良現象。實際上，於將以聚醯亞胺樹脂作為基質樹脂的不具有觸變性的液狀的絕緣保護材料塗佈於曲線形狀的線的情況下，絕緣保護材料自塗佈面流動，難以作為絕緣保護層來確保充分的厚度。因此，作為將絕緣保護材料維持於塗佈面上的方法，考慮到對絕緣保護材料賦予適當的觸變性的方法。On the other hand, as a material for insulation protection, for example, a material using polyimide resin as a base is known, and fluidity is controlled according to the use form thereof. For example, there is a paste-like insulating protective material obtained by dispersing an inorganic filler such as a fine silica filler or other organic filler in a matrix resin in order to impart thixotropy. When a liquid insulating protective material having no thixotropy is used in order to form an insulating protective layer, it is easy to cause a thin film thickness at the upper portion of the wire which requires electrostatic protection due to sags after coating, etc. unpleasant sight. In fact, when a liquid insulating protective material having no thixotropy using a polyimide resin as a matrix resin is applied to a curved line, the insulating protective material flows from the coating surface, and it is difficult to serve as insulating protection. Layers to ensure full thickness. Therefore, as a method of maintaining the insulating protective material on the coated surface, a method of providing an appropriate thixotropy to the insulating protective material is considered.

但是，使微細的無機填料等分散於基質樹脂中而成的糊狀的絕緣保護材料於成膜後產生基質樹脂等絕緣成分與無機填料的界面。藉由膜中存在界面，即便於使用聚醯亞胺樹脂等高絕緣性樹脂的情況下，膜的絕緣破壞電壓亦大幅降低，難以獲得充分的絕緣性能。因此，為了保證半導體元件的絕緣性，需要將絕緣保護層的膜厚設計得大，並塗佈絕緣保護材料，從而難以實現薄型化。However, a paste-like insulating protective material obtained by dispersing a fine inorganic filler and the like in a matrix resin causes an interface between an insulating component such as the matrix resin and the inorganic filler after film formation. With the presence of an interface in the film, even when a highly insulating resin such as a polyimide resin is used, the insulation breakdown voltage of the film is significantly reduced, and it is difficult to obtain sufficient insulation performance. Therefore, in order to ensure the insulation of the semiconductor element, it is necessary to design the film thickness of the insulating protective layer to be large, and to apply an insulating protective material, so that it is difficult to reduce the thickness.

作為改善由所述的絕緣成分與無機填料的界面所致的膜的絕緣性能下降的方法，揭示有一種包含加熱後溶解並與絕緣成分顯示出優異的相容性的有機填料（樹脂填料）的樹脂糊（專利文獻1）。根據所述樹脂糊，對平坦的基板進行印刷時，獲得優異的形狀穩定性，另外獲得優異的絕緣性。 但是，於本發明者等人的研究中明確到，於將所述樹脂糊作為絕緣保護材料而塗佈於線的情況下，樹脂糊並不充分地延展於線下部的空間而於線下部容易產生孔隙（void）。若半導體元件中存在孔隙，則容易受到濕度的影響，另外，半導體元件的可靠性亦容易下降。As a method for improving the decrease in the insulation performance of the film caused by the interface between the insulating component and the inorganic filler, there is disclosed an organic filler (resin filler) containing an organic filler that dissolves after heating and shows excellent compatibility with the insulating component. Resin paste (Patent Document 1). According to the resin paste, when a flat substrate is printed, excellent shape stability is obtained, and excellent insulation properties are obtained. However, it is clear from research by the present inventors that, when the resin paste is applied to a wire as an insulating and protective material, the resin paste does not sufficiently extend in the space below the wire and is easily applied to the lower part of the wire. Create voids. If there are pores in the semiconductor element, it is easily affected by humidity, and the reliability of the semiconductor element is also easily reduced.

根據以上，為了實現ESD耐性優異的薄型的半導體元件，謀求一種可於線上部使用高絕緣性的材料來形成薄型的絕緣保護層、且不產生孔隙地將線下部的空間密封的技術。因此，鑒於所述，本發明的課題是有關於使用可於線上部形成所述絕緣保護層且將線下部的空間密封的材料來提供一種ESD耐性優異且可靠性優異的薄型的半導體元件及其製造方法。 [解決課題之手段]In view of the foregoing, in order to realize a thin semiconductor device having excellent ESD resistance, a technology that can form a thin insulating protective layer using a highly insulating material on the upper part of a wire and seal the space below the wire without generating voids. Therefore, in view of the above, the subject of the present invention is to provide a thin semiconductor element having excellent ESD resistance and excellent reliability by using a material capable of forming the insulating protective layer on the upper part of the wire and sealing the space below the wire, and a material having excellent reliability Production method. [Means for solving problems]

本發明的實施形態是有關於以下。但本發明並不限定於以下而是包含各種實施形態。 一實施形態是有關於一種半導體元件，包括：基板；配置於所述基板上的半導體器件；將所述基板與所述半導體器件電性連接的線；將所述線的頂點的下部空間密封的第1密封層；以及經由所述線設置於所述第1密封層的上部的第2密封層，且 所述第1密封層包含液狀密封材的硬化膜， 所述第2密封層包含絕緣性樹脂塗佈材的乾燥塗膜。Embodiments of the present invention are as follows. However, the present invention is not limited to the following, but includes various embodiments. An embodiment relates to a semiconductor element including: a substrate; a semiconductor device disposed on the substrate; a line electrically connecting the substrate and the semiconductor device; and sealing a lower space of an apex of the line. A first sealing layer; and a second sealing layer provided above the first sealing layer via the wire, the first sealing layer including a cured film of a liquid sealing material, and the second sealing layer including insulation Dry coating film of a flexible resin coating material.

所述實施形態中，半導體元件較佳為進而包括以至少覆蓋所述第2密封層的方式設置的樹脂密封構件。 所述絕緣性樹脂塗佈材的乾燥塗膜的絕緣破壞電壓較佳為150 kV/mm以上。 所述絕緣性樹脂塗佈材較佳為包含平均粒徑0.1 μm～5.0 μm的樹脂填料。 所述絕緣性樹脂塗佈材的25℃下的黏度較佳為30 Pa·s～500 Pa·s。 所述絕緣性樹脂塗佈材的25℃下的觸變係數較佳為2.0～10.0。In the embodiment, the semiconductor element preferably further includes a resin sealing member provided so as to cover at least the second sealing layer. The insulation breakdown voltage of the dry coating film of the insulating resin coating material is preferably 150 kV / mm or more. The insulating resin coating material preferably contains a resin filler having an average particle diameter of 0.1 μm to 5.0 μm. The viscosity at 25 ° C. of the insulating resin coating material is preferably 30 Pa · s to 500 Pa · s. The thixotropic coefficient at 25 ° C. of the insulating resin coating material is preferably 2.0 to 10.0.

所述絕緣性樹脂塗佈材較佳為包含選自由聚醯胺、聚醯胺醯亞胺、及聚醯亞胺所組成的群組中的至少一種絕緣性樹脂。 所述第2密封層的膜厚較佳為100 μm以下。所述第2密封層的膜厚更佳為50 μm以下。 所述絕緣性樹脂的Tg（玻璃轉移溫度）較佳為150℃以上。The insulating resin coating material preferably contains at least one insulating resin selected from the group consisting of polyamidoamine, polyamidoimide, and polyamidoimide. The film thickness of the second sealing layer is preferably 100 μm or less. The film thickness of the second sealing layer is more preferably 50 μm or less. The Tg (glass transition temperature) of the insulating resin is preferably 150 ° C or higher.

所述實施形態中，所述液狀密封材較佳為包含熱硬化性樹脂成分與無機填充劑，且當將於75℃、剪切速度5 s-1 的條件下所測定的黏度（Pa·s）設為黏度A，並將於75℃、剪切速度50 s-1 的條件下所測定的黏度（Pa·s）設為黏度B時，以黏度A/黏度B的值獲得的75℃下的觸變係數為0.1～2.5。 所述液狀密封材中的氯離子量較佳為100 ppm以下。 所述液狀密封材中的所述無機填充劑的最大粒徑較佳為75 μm以下。In the embodiment, the liquid sealing material preferably contains a thermosetting resin component and an inorganic filler, and has a viscosity (Pa ·) measured at 75 ° C and a shear rate of 5 s -1 . s) is set to viscosity A, and the viscosity (Pa · s) measured under the conditions of 75 ° C and a shear rate of 50 s -1 is set to viscosity B. 75 ° C obtained from the viscosity A / viscosity B value The thixotropic coefficient is 0.1 to 2.5. The amount of chloride ions in the liquid sealing material is preferably 100 ppm or less. The maximum particle diameter of the inorganic filler in the liquid sealing material is preferably 75 μm or less.

所述液狀密封材的於75℃、剪切速度5 s-1 的條件下所測定的黏度較佳為3.0 Pa·s以下。 所述液狀密封材的於25℃、剪切速度10 s-1 的條件下所測定的黏度較佳為30 Pa·s以下。 以所述液狀密封材的總質量為基準，所述無機填充劑的含量較佳為50質量%以上。The viscosity of the liquid sealing material measured at 75 ° C and a shear rate of 5 s -1 is preferably 3.0 Pa · s or less. The viscosity of the liquid sealing material measured at 25 ° C. and a shear rate of 10 s -1 is preferably 30 Pa · s or less. Based on the total mass of the liquid sealing material, the content of the inorganic filler is preferably 50% by mass or more.

所述液狀密封材中的所述熱硬化性樹脂成分較佳為包含芳香族環氧樹脂與脂肪族環氧樹脂。 所述芳香族環氧樹脂較佳為包含選自由液狀的雙酚型環氧樹脂及液狀的縮水甘油胺型環氧樹脂所組成的群組中的至少一種，且所述脂肪族環氧樹脂較佳為包含線狀脂肪族環氧樹脂。 所述實施形態的半導體元件可較佳地用於指紋認證感測器中。但不限定於指紋認證感測器，亦設想將絕緣性樹脂塗佈材應用於薄型元件的線上部。另外，設想藉由本揭示的絕緣性樹脂塗佈材與液狀密封材的組合、以及使用了該些的製造方法，可製造新穎的薄型元件。The thermosetting resin component in the liquid sealing material preferably contains an aromatic epoxy resin and an aliphatic epoxy resin. The aromatic epoxy resin preferably contains at least one selected from the group consisting of a liquid bisphenol epoxy resin and a liquid glycidylamine epoxy resin, and the aliphatic epoxy resin The resin preferably contains a linear aliphatic epoxy resin. The semiconductor device according to the embodiment can be preferably used in a fingerprint authentication sensor. However, it is not limited to a fingerprint authentication sensor, and it is also conceivable to apply an insulating resin coating material to the upper part of a line of a thin element. In addition, it is conceived that a novel thin element can be manufactured by a combination of the insulating resin coating material and the liquid sealing material of the present disclosure, and a manufacturing method using these.

另一實施形態是有關於一種半導體元件的製造方法，其為製造如下的半導體元件的方法，所述半導體元件包括：基板；配置於所述基板上的半導體器件；將所述基板與所述半導體器件電性連接的線；將所述線的頂點的下部空間密封的第1密封層；以及經由所述線設置於所述第1密封層的上部的第2密封層，且所述半導體元件的製造方法包括： 藉由線將基板與配置於基板上的半導體器件電性連接的步驟； 對所述線的頂點的下部空間供給液狀密封材並形成第2密封層的步驟；繼而， 經由所述線對所述第1密封層的上部供給絕緣性樹脂塗佈材並形成第2密封層的步驟。 本申請案的揭示與2017年8月10日提出申請的日本專利特願2017-155891號所記載的主題相關聯，將其揭示的全部內容藉由引用而結合於本申請案中。 [發明的效果]Another embodiment is a method for manufacturing a semiconductor element, which is a method for manufacturing a semiconductor element including a substrate; a semiconductor device disposed on the substrate; and connecting the substrate and the semiconductor. A wire electrically connected to the device; a first sealing layer that seals a lower space of an apex of the wire; and a second sealing layer provided on the upper portion of the first sealing layer via the wire, and The manufacturing method includes: a step of electrically connecting a substrate to a semiconductor device disposed on the substrate by a wire; a step of supplying a liquid sealing material to a lower space at a vertex of the wire to form a second sealing layer; The wire is a step of supplying an insulating resin coating material to the upper portion of the first sealing layer and forming a second sealing layer. The disclosure of this application is related to the subject matter described in Japanese Patent Application No. 2017-155891 filed on August 10, 2017, and the entire contents of the disclosure are incorporated herein by reference. [Effect of the invention]

根據本發明的實施形態，可提供一種ESD耐性優異且可靠性優異的薄型的半導體元件及其製造方法。According to the embodiments of the present invention, it is possible to provide a thin semiconductor element having excellent ESD resistance and excellent reliability, and a method for manufacturing the same.

以下，對本發明的實施形態進行具體說明。 ＜半導體元件＞ 按照圖式對半導體元件進行說明。以下說明中，表示方向的「上」、「下」、「上部」、及「下部」等用語為了方便起見而用於特定圖式中的方向，並不限定裝置使用時的設置方向。Hereinafter, embodiments of the present invention will be specifically described. <Semiconductor element> A semiconductor element is demonstrated based on a figure. In the following description, the terms "upper", "lower", "upper", and "lower" indicating directions are used for specific directions in the drawings for convenience, and do not limit the installation direction when the device is used.

圖1是一實施形態的半導體元件的側面剖面圖。圖2是一實施形態的半導體元件的局部平面圖。如圖1及圖2所示，半導體元件包括：基板1；配置於基板1上的半導體器件2；將基板1與半導體器件2電性連接的線3；將線3的頂點3a的下部空間密封的第1密封層4a；以及經由接合線3設置於第1密封層4a的上部的第2密封層4b。如圖1所示，半導體元件較佳為進而包括以至少覆蓋第2密封層4b的方式設置的樹脂密封構件5。FIG. 1 is a side sectional view of a semiconductor element according to an embodiment. FIG. 2 is a partial plan view of a semiconductor element according to an embodiment. As shown in FIGS. 1 and 2, the semiconductor element includes: a substrate 1; a semiconductor device 2 disposed on the substrate 1; a wire 3 electrically connecting the substrate 1 and the semiconductor device 2; and a lower space of the vertex 3 a of the wire 3 is sealed. And a second sealing layer 4b provided on an upper portion of the first sealing layer 4a via a bonding wire 3. As shown in FIG. 1, the semiconductor element preferably further includes a resin sealing member 5 provided so as to cover at least the second sealing layer 4 b.

此處，所謂接合線的頂點3a是指，圖1中以參照符號「h」表示的自基板表面起的線的高度變得最大的部位。所述第1密封層4a包含液狀密封材的硬化膜，並藉由將液狀密封材注入至由基板1及半導體器件2的一部分與具有頂點3a的弧狀的線3所劃分的線下部的空間中而形成。另外，所述第2密封層4b包含絕緣性樹脂塗佈材的乾燥塗膜，並藉由第1密封層4a形成後塗佈所述絕緣性樹脂塗佈材而形成。 如此，根據所述實施形態，於線頂點3a的下部空間、及線上部，分別使用不同的材料形成密封層，藉此可提供ESD耐性優異且可靠性優異的薄型的半導體元件。以下，對半導體元件的構成進行具體說明。Here, the vertex 3a of the bonding line refers to a portion where the height of the line from the substrate surface indicated by the reference symbol "h" in FIG. 1 becomes the largest. The first sealing layer 4a includes a cured film of a liquid sealing material, and the liquid sealing material is injected into a lower portion of a line divided by a portion of the substrate 1 and the semiconductor device 2 and an arc-shaped line 3 having a vertex 3a. In the space. The second sealing layer 4b includes a dry coating film of an insulating resin coating material, and is formed by applying the insulating resin coating material after the first sealing layer 4a is formed. As described above, according to the embodiment, the sealing layer is formed by using different materials in the lower space of the line apex 3a and the upper portion of the line, thereby providing a thin semiconductor device having excellent ESD resistance and excellent reliability. Hereinafter, the configuration of the semiconductor element will be specifically described.

1.基板 基板並無特別限定，只要為包含可將半導體器件安裝並加以線接合的材料的基板即可。基板的材料可根據半導體元件的用途而自本技術領域中眾所周知的材料中選擇。 例如，於將半導體元件用於指紋認證感測器用途的情況下，可代表性地使用玻璃環氧基板等薄的剛性（rigid）基板。1. Substrate The substrate is not particularly limited as long as it is a substrate including a material that can mount semiconductor devices and wire-bond them. The material of the substrate can be selected from materials well-known in the technical field according to the use of the semiconductor element. For example, when a semiconductor element is used for a fingerprint authentication sensor, a thin rigid substrate such as a glass epoxy substrate can be typically used.

作為另一例，於將半導體元件用於功率模組（Power Module）用途的情況下，通常可使用直接銅接合（Direct Cupper Bond，DCB）基板、及氧化鋁系基板等陶瓷基板。於使銅電路等直接接合於陶瓷基板的情況下，不需要設置成為熱阻的接合層，因此容易獲得高放熱性及高絕緣性。因此，此種使銅電路等直接接合的陶瓷基板例如可較佳地用於車載用半導體、電氣鐵路用半導體、產業機械用半導體之類的高電壓及高電流的用途。As another example, when a semiconductor device is used for a power module, a ceramic substrate such as a direct cupper bond (DCB) substrate and an alumina-based substrate can be generally used. When a copper circuit or the like is directly bonded to a ceramic substrate, it is not necessary to provide a bonding layer for thermal resistance, and therefore, high heat dissipation and high insulation properties are easily obtained. Therefore, such a ceramic substrate for directly bonding a copper circuit or the like can be preferably used for high-voltage and high-current applications such as semiconductors for automobiles, semiconductors for electric railways, and semiconductors for industrial machinery.

2.半導體器件 半導體器件經由線而電性連接於基板。 半導體器件例如可為指紋認證感測器用半導體器件、功率模組用途的矽-絕緣閘極型雙極電晶體（Silicon-Insulated Gate Bipolar Transistor，Si-IGBT）、碳化矽（Silicon Carbide，SiC）、金屬氧化物半導體場效應電晶體（Metal Oxide Semiconductor Field Effect Transistor，MOSFET）（金屬氧化膜半導體場效應電晶體）。不限於該些半導體器件，於使用要求ESD耐性、或者針對高電壓高電流條件下的使用而要求高絕緣性般的半導體器件的情況下，可容易地獲得所述實施形態的效果。2. Semiconductor device The semiconductor device is electrically connected to the substrate via a wire. The semiconductor device may be, for example, a semiconductor device for a fingerprint authentication sensor, a silicon-insulated gate bipolar transistor (Si-IGBT), a silicon carbide (SiC), Metal Oxide Semiconductor Field Effect Transistor (MOSFET) (Metal Oxide Semiconductor Field Effect Transistor). The effects of the embodiment can be easily obtained when the semiconductor device is not limited to these semiconductor devices and requires high-insulation properties for use under conditions of high voltage and high current.

半導體器件與基板通常藉由焊球等而被導電性地接合。於使用功率模組用途的半導體器件的情況下，半導體器件與基板的導電性接合除焊球以外，亦可使用燒結銀、及燒結銅等材料。The semiconductor device and the substrate are usually conductively bonded by a solder ball or the like. When a semiconductor device for power module applications is used, in addition to solder balls, materials such as sintered silver and sintered copper can be used for the conductive bonding of the semiconductor device and the substrate.

3.線 線用於將半導體器件與基板電性接合。線的材料可根據半導體元件的用途而自本技術領域中眾所周知的材料中選擇。例如，於指紋認證感測器的用途中使用半導體元件的情況下，可使用金線、銀合金線、及銅線等。通常，主流為金線。作為另一例，於功率模組的用途中使用半導體元件的情況下，通常使用鋁線。3. Wires Wires are used to electrically bond semiconductor devices to substrates. The material of the wire can be selected from materials well known in the art according to the use of the semiconductor element. For example, when a semiconductor element is used for the application of a fingerprint authentication sensor, a gold wire, a silver alloy wire, a copper wire, etc. can be used. Usually, the mainstream is gold. As another example, when a semiconductor element is used for a power module application, an aluminum wire is generally used.

4a.第1密封層 第1密封層包含液狀密封材的硬化膜。如圖1中所看到般，將液狀密封材注入至由基板1及半導體器件2的一部分與具有頂點3a的弧狀的線3所劃分的線下部的空間中，繼而使液狀密封材硬化，藉此形成第1密封層。4a. First sealing layer The first sealing layer includes a cured film of a liquid sealing material. As seen in FIG. 1, a liquid sealing material is injected into a space below a line divided by a part of the substrate 1 and the semiconductor device 2 and an arc-shaped line 3 having an apex 3 a, and then the liquid sealing material is made. By hardening, a first sealing layer is formed.

一實施形態中，液狀密封材含有樹脂成分與無機填充材。液狀密封材較佳為，當將於75℃、剪切速度5 s-1 的條件下所測定的黏度（Pa·s）設為黏度A，並將於75℃、剪切速度50 s-1 的條件下所測定的黏度（Pa·s）設為黏度B時，以黏度A/黏度B的值獲得的75℃下的觸變係數為0.1～2.5。液狀密封材視需要亦可含有樹脂成分及無機填充材以外的成分。In one embodiment, the liquid sealing material contains a resin component and an inorganic filler. Sealing material is preferably a liquid, the viscosity (Pa · s) at will when 75 ℃, conditions of a shear rate of 5 s -1 to the viscosity as measured A, and will be 75 ℃, a shear rate of 50 s - When the viscosity (Pa · s) measured under the condition of 1 is set to the viscosity B, the thixotropic coefficient at 75 ° C obtained from the value of the viscosity A / viscosity B is 0.1 to 2.5. The liquid sealing material may contain components other than a resin component and an inorganic filler as needed.

本揭示中所謂「液狀密封材」，是指可作為將半導體器件與基板之間填充的底部填充材而較佳地使用的、室溫下為液狀且藉由加熱等而硬化的樹脂材料。藉由使用液狀密封材將線下部的空間無間隙地密封，當利用絕緣性樹脂塗佈材將線上部密封時，可避免因該塗佈材而產生線流動等問題。另外，於塗佈絕緣性樹脂塗佈材時不產生流掛等不良現象，容易將塗佈材維持於線塗佈面上。The "liquid sealing material" in the present disclosure refers to a resin material which is preferably used as an underfill material for filling a space between a semiconductor device and a substrate, and which is liquid at room temperature and is hardened by heating or the like. . By using a liquid sealing material, the space under the wire is sealed without gaps. When the upper part of the wire is sealed with an insulating resin coating material, problems such as line flow due to the coating material can be avoided. In addition, when an insulating resin coating material is applied, defects such as sagging do not occur, and it is easy to maintain the coating material on the line coating surface.

液狀密封材的75℃下的觸變係數為0.1～2.5，藉此容易將線下部的空間無間隙地密封。The thixotropic coefficient of the liquid sealing material at 75 ° C. is 0.1 to 2.5, thereby making it easy to seal the space under the wire without a gap.

雖然並不特別限定，但於一實施形態中，液狀密封材的75℃下的觸變係數更佳為0.5～2.0，進而佳為1.0～2.0。Although not particularly limited, in one embodiment, the thixotropic coefficient of the liquid sealing material at 75 ° C. is more preferably 0.5 to 2.0, and further preferably 1.0 to 2.0.

液狀密封材於75℃、剪切速度5 s-1 下所測定的黏度較佳為3.0 Pa·s以下，更佳為2.0 Pa·s以下。若液狀密封材於75℃、剪切速度5 s-1 下的黏度為3.0 Pa·s以下，則有如下傾向：將液狀密封材賦予至線的周圍時，有效抑制線流動的發生。 所述黏度的下限並無特別限制，但就保持賦予至線周圍的狀態的觀點而言，較佳為0.01 Pa·s以上。The viscosity of the liquid sealing material measured at 75 ° C and a shear rate of 5 s -1 is preferably 3.0 Pa · s or less, and more preferably 2.0 Pa · s or less. When the viscosity of the liquid sealing material at 75 ° C. and a shear rate of 5 s -1 is 3.0 Pa · s or less, the liquid sealing material tends to effectively suppress the occurrence of line flow when the liquid sealing material is provided around the line. The lower limit of the viscosity is not particularly limited, but is preferably 0.01 Pa · s or more from the viewpoint of maintaining the state imparted to the periphery of the line.

液狀密封材於25℃、剪切速度10 s-1 下所測定的黏度較佳為30 Pa·s以下，更佳為20 Pa·s以下。所述黏度的下限並無特別限制，但就保持賦予至線周圍的狀態的觀點而言，較佳為0.1 Pa·s以上。The viscosity of the liquid sealing material measured at 25 ° C. and a shear rate of 10 s -1 is preferably 30 Pa · s or less, and more preferably 20 Pa · s or less. The lower limit of the viscosity is not particularly limited, but is preferably 0.1 Pa · s or more from the viewpoint of maintaining the state imparted to the periphery of the line.

液狀密封材的25℃下的黏度為使用E型黏度計（例如，東京計器股份有限公司製造的維斯柯尼（VISCONIC） EHD型）測定所得的值，75℃下的黏度為使用流變儀（例如，TA儀器（TA Instruments）公司的商品名「AR2000」）測定所得的值。The viscosity at 25 ° C of the liquid sealing material is a value measured using an E-type viscometer (for example, VISCONIC EHD type manufactured by Tokyo Keiki Co., Ltd.), and the viscosity at 75 ° C is obtained using rheology The value obtained is measured by an instrument (for example, a brand name "AR2000" of TA Instruments).

關於液狀密封材的75℃下的觸變係數，當將於75℃、剪切速度5 s-1 的條件下所測定的黏度設為黏度A，並將於75℃、剪切速度50 s-1 的條件下所測定的黏度設為黏度B時，是以黏度A/黏度B的值而獲得。Regarding the thixotropic coefficient of the liquid sealing material at 75 ° C, when the viscosity measured at 75 ° C and a shear rate of 5 s -1 is set to viscosity A, the viscosity is measured at 75 ° C and a shear rate of 50 s. When the viscosity measured under the condition of -1 is set to the viscosity B, it is obtained as the value of the viscosity A / viscosity B.

用以使液狀密封材滿足所述黏度條件的方法並無特別限制。例如，作為降低液狀密封材的黏度的方法，可列舉使用低黏度的樹脂成分的方法、添加溶劑的方法等，可將該些單獨使用或組合使用。The method for making the liquid sealing material satisfy the viscosity condition is not particularly limited. For example, as a method of reducing the viscosity of the liquid sealing material, a method using a resin component with a low viscosity, a method of adding a solvent, etc. may be mentioned, and these may be used alone or in combination.

＜樹脂成分＞ 液狀密封材中所含的樹脂成分只要為可使液狀密封材滿足所述條件者，則無特別限制。就與現有設備的適合性、作為液狀密封材的特性的穩定性等觀點而言，較佳為使用熱硬化性的樹脂成分，更佳為使用環氧樹脂。另外，較佳為使用常溫（25℃）下為液狀（以下，亦簡稱為「液狀的」）的樹脂成分，更佳為使用液狀的環氧樹脂。樹脂成分亦可為環氧樹脂與硬化劑的組合。<Resin Component> The resin component contained in the liquid sealing material is not particularly limited as long as the liquid sealing material can satisfy the above conditions. From the viewpoints of compatibility with existing equipment and stability of characteristics as a liquid sealing material, it is preferable to use a thermosetting resin component, and it is more preferable to use an epoxy resin. In addition, it is preferable to use a resin component that is liquid (hereinafter, also simply referred to as "liquid") at normal temperature (25 ° C), and more preferably a liquid epoxy resin. The resin component may be a combination of an epoxy resin and a hardener.

（環氧樹脂） 作為可於液狀密封材中使用的環氧樹脂，例如可列舉：雙酚A、雙酚F、雙酚AD、雙酚S、氫化雙酚A等二縮水甘油醚型環氧樹脂，以鄰甲酚酚醛清漆型環氧樹脂為代表的將酚類與醛類的酚醛清漆樹脂環氧化而成者（酚醛清漆型環氧樹脂），藉由鄰苯二甲酸、二聚酸等多元酸與表氯醇的反應而獲得的縮水甘油酯型環氧樹脂，藉由對胺基苯酚、二胺基二苯基甲烷、異氰脲酸等胺化合物與表氯醇的反應而獲得的縮水甘油胺型環氧樹脂，藉由過乙酸等過酸將烯烴鍵氧化所得的線狀脂肪族環氧樹脂、脂環族環氧樹脂等。環氧樹脂可單獨使用一種，亦可將兩種以上組合使用。(Epoxy resin) Examples of the epoxy resin usable in the liquid sealing material include diglycidyl ether rings such as bisphenol A, bisphenol F, bisphenol AD, bisphenol S, and hydrogenated bisphenol A. Oxygen resin, typified by ortho-cresol novolac epoxy resin, is obtained by epoxidizing phenols and aldehydes novolac resins (novolac epoxy resins), using phthalic acid and dimer acid A glycidyl ester epoxy resin obtained by the reaction of an isopoly acid and epichlorohydrin is obtained by reacting an amine compound such as p-aminophenol, diaminodiphenylmethane, and isocyanuric acid with epichlorohydrin. Is a linear aliphatic epoxy resin, an alicyclic epoxy resin, etc. obtained by oxidizing an olefin bond with a peracid such as peracetic acid. The epoxy resin may be used singly or in combination of two or more kinds.

所述環氧樹脂中，就黏度、使用實績、材料價格等觀點而言，較佳為選自由二縮水甘油醚型環氧樹脂及縮水甘油胺型環氧樹脂所組成的群組中的至少一種。其中，就流動性的觀點而言，較佳為液狀的雙酚型環氧樹脂，就耐熱性、接著性及流動性的觀點而言，較佳為液狀的縮水甘油胺型環氧樹脂。Among the epoxy resins, at least one selected from the group consisting of a diglycidyl ether type epoxy resin and a glycidylamine type epoxy resin from the viewpoints of viscosity, use performance, and material price is preferred. . Among them, a liquid bisphenol-type epoxy resin is preferable from the viewpoint of fluidity, and a liquid glycidylamine-type epoxy resin is preferable from the viewpoint of heat resistance, adhesiveness, and fluidity. .

一實施形態中，液狀密封材使用具有芳香環的環氧樹脂（芳香族環氧樹脂）、與脂肪族環氧樹脂作為樹脂成分。例如，使用作為芳香族環氧樹脂的液狀的雙酚F型環氧樹脂及液狀的縮水甘油胺型環氧樹脂、與作為脂肪族環氧樹脂的線狀脂肪族環氧樹脂作為樹脂成分。In one embodiment, the liquid sealing material uses an epoxy resin (aromatic epoxy resin) having an aromatic ring and an aliphatic epoxy resin as resin components. For example, a liquid bisphenol F-type epoxy resin that is an aromatic epoxy resin, a liquid glycidylamine-type epoxy resin, and a linear aliphatic epoxy resin that is an aliphatic epoxy resin are used as resin components. .

作為縮水甘油胺型環氧樹脂，可列舉：對(2,3-環氧丙氧基)-N,N-雙(2,3-環氧丙基)苯胺、二縮水甘油基苯胺、二縮水甘油基甲苯胺、二縮水甘油基甲氧基苯胺、二縮水甘油基二甲基苯胺、二縮水甘油基三氟甲基苯胺等。 作為線狀脂肪族環氧樹脂，可列舉：1,6-己二醇二縮水甘油醚、間苯二酚二縮水甘油醚、丙二醇二縮水甘油醚、1,3-雙(3-縮水甘油氧基丙基)四甲基二矽氧烷、環己烷二甲醇二縮水甘油醚等。Examples of the glycidylamine-type epoxy resin include p- (2,3-glycidoxy) -N, N-bis (2,3-epoxypropyl) aniline, diglycidylaniline, and diglycidyl. Glyceryl toluidine, diglycidyl methoxyaniline, diglycidyl dimethylaniline, diglycidyl trifluoromethylaniline, and the like. Examples of the linear aliphatic epoxy resin include 1,6-hexanediol diglycidyl ether, resorcinol diglycidyl ether, propylene glycol diglycidyl ether, and 1,3-bis (3-glycidyloxy Propyl) tetramethyldisilazane, cyclohexanedimethanol diglycidyl ether, and the like.

於將液狀的雙酚F型環氧樹脂、液狀的縮水甘油胺型環氧樹脂、與線狀脂肪族環氧樹脂併用作為環氧樹脂的情況下，該些的調配比並無特別限制。所述調配比例如可為，液狀的縮水甘油胺型環氧樹脂為整體的40質量%～70質量%，液狀的雙酚F型環氧樹脂與線狀脂肪族環氧樹脂的合計為整體的30質量%～60質量%。When a liquid bisphenol F-type epoxy resin, a liquid glycidylamine-type epoxy resin, and a linear aliphatic epoxy resin are used in combination as the epoxy resin, the blending ratio is not particularly limited. . The blending ratio may be, for example, 40% to 70% by mass of the liquid glycidylamine type epoxy resin, and the total of the liquid bisphenol F type epoxy resin and the linear aliphatic epoxy resin is 30% to 60% by mass of the whole.

所述例示的環氧樹脂佔環氧樹脂整體的含有率（於使用兩種以上的所例示的環氧樹脂的情況下為其合計）就充分發揮其性能的觀點而言，較佳為20質量%以上，更佳為30質量%以上，進而佳為50質量%以上。該含有率的上限值並無特別限制，可於獲得液狀密封材的所期望的性狀及特性的範圍內決定。The content ratio of the illustrated epoxy resin to the entire epoxy resin (total when two or more of the illustrated epoxy resins are used) is preferably 20 mass from the viewpoint of fully exerting its performance. % Or more, more preferably 30% by mass or more, still more preferably 50% by mass or more. The upper limit of the content ratio is not particularly limited, and can be determined within a range of obtaining desired properties and characteristics of the liquid sealing material.

作為環氧樹脂，較佳為使用液狀的環氧樹脂，但亦可併用常溫（25℃）下為固體的環氧樹脂。於併用常溫下為固體的環氧樹脂的情況下，其比例較佳為設為環氧樹脂整體的20質量%以下。As the epoxy resin, a liquid epoxy resin is preferably used, but an epoxy resin that is solid at normal temperature (25 ° C) may be used in combination. When the epoxy resin which is solid at normal temperature is used in combination, the proportion thereof is preferably 20% by mass or less of the entire epoxy resin.

就抑制線的腐蝕的觀點而言，液狀密封材中的氯離子量越少越佳。具體而言，例如較佳為100 ppm以下。 本揭示中，液狀密封材中的氯離子量為藉由使用碳酸鈉溶液作為溶離液的離子層析法，於121℃、20小時的條件下進行處理，並以2.5 g/50 cc換算所得的值（ppm）。From the viewpoint of suppressing the corrosion of the wire, the smaller the amount of chloride ions in the liquid sealing material, the better. Specifically, it is preferably 100 ppm or less, for example. In the present disclosure, the amount of chloride ions in the liquid sealing material is obtained by ion chromatography using a sodium carbonate solution as an eluent at 121 ° C for 20 hours, and is converted into 2.5 g / 50 cc. Value (ppm).

（硬化劑） 作為硬化劑，可無特別限制地使用胺系硬化劑、酚硬化劑、酸酐等作為環氧樹脂的硬化劑而一般所使用者。就抑制線流動的觀點而言，較佳為使用液狀的硬化劑。就耐溫度循環性及耐濕性等優異、且可提升半導體封裝的可靠性的觀點而言，硬化劑較佳為芳香族胺化合物，更佳為液狀的芳香族胺化合物。硬化劑可單獨使用一種，亦可將兩種以上組合使用。(Hardener) As a hardener, an amine hardener, a phenol hardener, an acid anhydride, etc. can be used as a hardener of an epoxy resin, without a restriction | limiting in particular, and it is generally used. From the viewpoint of suppressing linear flow, it is preferable to use a liquid hardener. From the viewpoint of excellent temperature cycle resistance, moisture resistance, and the like and improving the reliability of the semiconductor package, the curing agent is preferably an aromatic amine compound, and more preferably a liquid aromatic amine compound. The hardener may be used singly or in combination of two or more kinds.

作為液狀的芳香族胺化合物，可列舉：二乙基甲苯二胺、1-甲基-3,5-二乙基-2,4-二胺基苯、1-甲基-3,5-二乙基-2,6-二胺基苯、1,3,5-三乙基-2,6-二胺基苯、3,3'-二乙基-4,4'-二胺基二苯基甲烷、3,5,3',5'-四甲基-4,4'-二胺基二苯基甲烷、二甲基硫代甲苯二胺等。Examples of the liquid aromatic amine compound include diethyltoluenediamine, 1-methyl-3,5-diethyl-2,4-diaminobenzene, and 1-methyl-3,5- Diethyl-2,6-diaminobenzene, 1,3,5-triethyl-2,6-diaminobenzene, 3,3'-diethyl-4,4'-diaminodi Phenylmethane, 3,5,3 ', 5'-tetramethyl-4,4'-diaminodiphenylmethane, dimethylthiotoluenediamine and the like.

液狀的芳香族胺化合物可作為市售品而獲取。例如，可獲取JER固（cure）W（三菱化學股份有限公司製造的商品名）、卡亞哈德（Kayahard）A-A、卡亞哈德（Kayahard）A-B、卡亞哈德（Kayahard）A-S（日本化藥股份有限公司製造的商品名）、東都胺（Tohto Amine）HM-205（新日鐵住金化學股份有限公司的商品名）、艾迪科硬化劑（Adeka Hardner）EH-101（艾迪科（ADEKA）股份有限公司製造的商品名）、艾波米克（Epomik）Q-640、艾波米克（Epomik）Q-643（三井化學股份有限公司製造的商品名）、DETDA80（龍沙（Lonza）公司製造的商品名）等。A liquid aromatic amine compound can be obtained as a commercial item. For example, JER solid W (trade name manufactured by Mitsubishi Chemical Corporation), Kayahard AA, Kayahard AB, Kayahard AS (Japan Trade name manufactured by Chemical Pharmaceutical Co., Ltd.), Tohto Amine HM-205 (trade name of Nippon Steel & Sumitomo Chemical Co., Ltd.), Adeka Hardner EH-101 (Edike (Trade name manufactured by ADEKA Co., Ltd.), Epomik Q-640, Epomik Q-643 (trade name manufactured by Mitsui Chemicals Co., Ltd.), DETDA80 (Longsha ( Lonza) brand name).

液狀的芳香族胺化合物中，就液狀密封材的保存穩定性的觀點而言，較佳為3,3'-二乙基-4,4'-二胺基二苯基甲烷、二乙基甲苯二胺及二甲基硫代甲苯二胺。較佳為以該些中的任一者或該些的混合物作為硬化劑的主成分。作為二乙基甲苯二胺，可列舉3,5-二乙基甲苯-2,4-二胺及3,5-二乙基甲苯-2,6-二胺，該些可單獨使用，亦可組合使用，較佳為將3,5-二乙基甲苯-2,4-二胺的比例設為二乙基甲苯二胺整體的60質量%以上。Among the liquid aromatic amine compounds, 3,3'-diethyl-4,4'-diaminodiphenylmethane and diethyl group are preferred from the viewpoint of storage stability of the liquid sealing material. Methyltoluenediamine and dimethylthiotoluenediamine. It is preferable to use any one or a mixture of these as a main component of a hardener. Examples of the diethyltoluenediamine include 3,5-diethyltoluene-2,4-diamine and 3,5-diethyltoluene-2,6-diamine. These can be used alone or in combination. In combination, the ratio of 3,5-diethyltoluene-2,4-diamine is preferably 60% by mass or more of the total diethyltoluenediamine.

液狀密封材中的硬化劑的量並無特別限制，可考慮與環氧樹脂的當量比等而選擇。就將環氧樹脂或硬化劑的未反應部分抑制得低的觀點而言，硬化劑的量較佳為相對於環氧樹脂的環氧基的當量數而言的硬化劑的官能基的當量數（例如，於胺系硬化劑的情況下，為活性氫的當量數）之比成為0.7～1.6的範圍的量，更佳為成為0.8～1.4的範圍的量，進而佳為成為0.9～1.2的範圍的量。The amount of the hardener in the liquid sealing material is not particularly limited, and can be selected in consideration of the equivalent ratio to the epoxy resin and the like. From the viewpoint of suppressing the unreacted portion of the epoxy resin or the curing agent to be low, the amount of the curing agent is preferably the number of functional groups equivalent to the number of equivalents of the epoxy group of the epoxy resin. (For example, in the case of an amine-based hardener, the number of equivalents of active hydrogen) is an amount in a range of 0.7 to 1.6, more preferably an amount in a range of 0.8 to 1.4, and even more preferably 0.9 to 1.2. The amount of scope.

＜無機填充材＞ 液狀密封材中所含的無機填充材的種類並無特別限制。例如可列舉：二氧化矽、碳酸鈣、黏土、氧化鋁、氮化矽、碳化矽、氮化硼、矽酸鈣、鈦酸鉀、氮化鋁、氧化鈹、氧化鋯、鋯石、鎂橄欖石、塊滑石、尖晶石、富鋁紅柱石、氧化鈦等的粉體、或者將該些加以球形化而成的珠粒（beads）、玻璃纖維等。進而，可使用具有阻燃效果的無機填充材，作為此種無機填充材，可列舉：氫氧化鋁、氫氧化鎂、硼酸鋅、鉬酸鋅等。無機填充材可單獨使用一種，亦可將兩種以上組合使用。<Inorganic Filler> There is no particular limitation on the type of the inorganic filler contained in the liquid sealing material. Examples include: silicon dioxide, calcium carbonate, clay, aluminum oxide, silicon nitride, silicon carbide, boron nitride, calcium silicate, potassium titanate, aluminum nitride, beryllium oxide, zirconia, zircon, magnesium olive Powder such as stone, block talc, spinel, mullite, titanium oxide, etc., or beads, glass fibers, etc. obtained by spheroidizing these. Furthermore, an inorganic filler having a flame-retardant effect can be used. Examples of such an inorganic filler include aluminum hydroxide, magnesium hydroxide, zinc borate, and zinc molybdate. The inorganic fillers may be used singly or in combination of two or more.

無機填充材中，就獲取的容易性、化學穩定性、材料成本的觀點而言，較佳為二氧化矽。作為二氧化矽，可列舉球狀二氧化矽、結晶二氧化矽等，就液狀密封材朝微細間隙的流動性及滲透性的觀點而言，較佳為球狀二氧化矽。作為球狀二氧化矽，可列舉藉由爆燃法所得的二氧化矽、熔融二氧化矽等。Among the inorganic fillers, silicon dioxide is preferred from the viewpoints of availability, chemical stability, and material cost. Examples of the silicon dioxide include spherical silicon dioxide, crystalline silicon dioxide, and the like. From the viewpoint of fluidity and permeability of the liquid sealing material to the fine gaps, spherical silicon dioxide is preferred. Examples of the spherical silica include silica obtained by a deflagration method, fused silica, and the like.

亦可對無機填充材的表面進行表面處理。例如，亦可使用後述的偶合劑進行表面處理。The surface of the inorganic filler may be surface-treated. For example, you may perform surface treatment using the coupling agent mentioned later.

無機填充材的體積平均粒徑較佳為0.1 μm～30 μm，更佳為0.3 μm～5 μm，進而佳為0.5 μm～3 μm。特別是於球形二氧化矽的情況下，較佳為體積平均粒徑為所述範圍內。若體積平均粒徑為0.1 μm以上，則有於液狀密封材中的分散性優異、流動性優異的傾向。若體積平均粒徑為30 μm以下，則有如下傾向：液狀密封材中的無機填充材的沈降減少，液狀密封材朝微細間隙的滲透性及流動性提升並抑制孔隙及未填充的發生。The volume average particle diameter of the inorganic filler is preferably 0.1 μm to 30 μm, more preferably 0.3 μm to 5 μm, and even more preferably 0.5 μm to 3 μm. Especially in the case of spherical silicon dioxide, it is preferable that the volume average particle diameter is within the above range. When the volume average particle diameter is 0.1 μm or more, there is a tendency that the dispersibility in the liquid sealing material is excellent and the fluidity is excellent. When the volume average particle diameter is 30 μm or less, there is a tendency that the sedimentation of the inorganic filler in the liquid sealing material is reduced, the permeability and fluidity of the liquid sealing material toward the fine gaps are improved, and the occurrence of pores and unfilled materials is suppressed. .

無機填充材的體積平均粒徑是指，於使用雷射繞射式粒度分佈測定裝置而獲得的體積基準的粒度分佈中，自小徑側起的累積成為50%時的粒徑（D50%）。The volume average particle diameter of the inorganic filler is a particle diameter (D50%) at a volume-based particle size distribution obtained by using a laser diffraction particle size distribution measuring device from a small-diameter side with a cumulative accumulation of 50% from the small-diameter side. .

無機填充材的最大粒徑較佳為75 μm以下，更佳為50 μm以下，進而佳為20 μm以下。The maximum particle diameter of the inorganic filler is preferably 75 μm or less, more preferably 50 μm or less, and even more preferably 20 μm or less.

本揭示中無機填充材的最大粒徑是指，於體積基準的粒度分佈中，自小徑側起的累積成為99%時的粒徑（D99%）。The maximum particle diameter of the inorganic filler in the present disclosure refers to a particle diameter (D99%) when the cumulative particle diameter distribution from the small-diameter side in the volume-based particle size distribution becomes 99%.

以液狀密封材的總質量為基準，無機填充材的含量較佳為50質量%以上。以液狀密封材的總質量為基準，若無機填充材的含量為50質量%以上，則有可充分確保線周邊的放熱性與強度的傾向。以液狀密封材的總質量為基準，無機填充材的含量更佳為60質量%以上，進而佳為70質量%以上。 就抑制液狀密封材的黏度上升的觀點而言，以液狀密封材的總質量為基準，無機填充材的含量較佳為80質量%以下。The content of the inorganic filler is preferably 50% by mass or more based on the total mass of the liquid sealing material. Based on the total mass of the liquid sealing material, if the content of the inorganic filler is 50% by mass or more, there is a tendency that the heat radiation property and strength around the wire can be sufficiently secured. Based on the total mass of the liquid sealing material, the content of the inorganic filler is more preferably 60% by mass or more, and even more preferably 70% by mass or more. From the viewpoint of suppressing an increase in the viscosity of the liquid sealing material, the content of the inorganic filler is preferably 80% by mass or less based on the total mass of the liquid sealing material.

＜溶劑＞ 液狀密封材亦可含有溶劑。藉由包含溶劑，可將液狀密封材的黏度調節為所期望的範圍。溶劑可單獨使用一種，亦可併用兩種以上。<Solvent> The liquid sealing material may contain a solvent. By including a solvent, the viscosity of a liquid sealing material can be adjusted to a desired range. The solvents may be used singly or in combination of two or more kinds.

溶劑的種類並無特別限制，可自於半導體裝置的安裝技術中使用的樹脂組成物中一般所使用的溶劑中選擇。具體而言，可列舉： 丁基卡必醇乙酸酯、甲醇、乙醇、丙醇、丁醇等醇系溶劑， 丙酮、甲基乙基酮等酮系溶劑， 乙二醇乙醚、乙二醇甲醚、乙二醇丁醚、丙二醇甲醚、二丙二醇甲醚、丙二醇乙醚、丙二醇甲醚乙酸酯等二醇醚系溶劑， γ-丁內酯、δ-戊內酯、ε-己內酯等內酯系溶劑， 二甲基乙醯胺、二甲基甲醯胺等醯胺系溶劑，及 甲苯、二甲苯等芳香族系溶劑 等。 就避免將液狀密封材硬化時的由急劇揮發所致的氣泡形成的觀點而言，較佳為使用沸點高（例如，常壓下的沸點為170℃以上）的溶劑。The type of the solvent is not particularly limited, and can be selected from solvents generally used in resin compositions used in the semiconductor device mounting technology. Specific examples include: alcohol solvents such as butylcarbitol acetate, methanol, ethanol, propanol, butanol, ketone solvents such as acetone, methyl ethyl ketone, ethylene glycol ether, and ethylene glycol Glycol ether solvents such as methyl ether, ethylene glycol butyl ether, propylene glycol methyl ether, propylene glycol methyl ether, propylene glycol ether, propylene glycol methyl ether acetate, γ-butyrolactone, δ-valerolactone, ε-caprolactone Lactone-based solvents such as esters, amine-based solvents such as dimethylacetamide and dimethylformamide, and aromatic solvents such as toluene and xylene. From the viewpoint of avoiding formation of bubbles due to rapid volatilization when the liquid sealing material is hardened, it is preferable to use a solvent having a high boiling point (for example, a boiling point at a normal pressure of 170 ° C or higher).

於液狀密封材包含溶劑的情況下，所述溶劑的量並無特別限制，但較佳為液狀密封材整體的1質量%～70質量%。When the liquid sealing material contains a solvent, the amount of the solvent is not particularly limited, but it is preferably 1% to 70% by mass of the entire liquid sealing material.

＜硬化促進劑＞ 液狀密封材視需要亦可含有促進環氧樹脂與硬化劑的反應的硬化促進劑。 硬化促進劑並無特別限制，可使用現有公知者。例如可列舉： 1,8-二氮雜-雙環[5.4.0]十一烯-7、1,5-二氮雜-雙環[4.3.0]壬烯、5,6-二丁基胺基-1,8-二氮雜-雙環[5.4.0]十一烯-7等環脒化合物， 三乙二胺、苄基二甲基胺、三乙醇胺、二甲基胺基乙醇、三(二甲基胺基甲基)苯酚等三級胺化合物， 2-甲基咪唑、2-乙基-4-甲基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、1-苄基-2-苯基咪唑、1-苄基-2-甲基咪唑、2-苯基-4,5-二羥基甲基咪唑、2-苯基-4-甲基-5-羥基甲基咪唑、2,4-二胺基-6-(2'-甲基咪唑基-(1'))-乙基-均三嗪、2-十七烷基咪唑等咪唑化合物， 三烷基膦（三丁基膦等）、二烷基芳基膦（二甲基苯基膦等）、烷基二芳基膦（甲基二苯基膦等）、三苯基膦、烷基取代三苯基膦等有機膦化合物，及 於該些有機膦化合物中加成順丁烯二酸酐、1,4-苯醌、2,5-甲醌、1,4-萘醌、2,3-二甲基苯醌、2,6-二甲基苯醌、2,3-二甲氧基-5-甲基-1,4-苯醌、2,3-二甲氧基-1,4-苯醌、及苯基-1,4-苯醌等醌化合物、以及重氮苯基甲烷、及酚樹脂等具有π鍵的化合物而成的具有分子內分極的化合物、與該些的衍生物。 進而可列舉：2-乙基-4-甲基咪唑四苯基硼酸鹽、N-甲基嗎啉四苯基硼酸鹽等苯基硼鹽。另外，作為具有潛伏性的硬化促進劑，可列舉以常溫固體的具有胺基的化合物為核並被覆常溫固體的環氧化合物的殼而成的核-殼粒子。硬化促進劑可單獨使用一種，亦可將兩種以上組合使用。<Hardening accelerator> The liquid sealing material may contain a hardening accelerator which accelerates the reaction of an epoxy resin and a hardening agent as needed. The hardening accelerator is not particularly limited, and a conventionally known one can be used. Examples include: 1,8-diaza-bicyclo [5.4.0] undecene-7, 1,5-diaza-bicyclo [4.3.0] nonene, 5,6-dibutylamino -1,8-diaza-bicyclo [5.4.0] undecene-7 and other cyclofluorene compounds, triethylenediamine, benzyldimethylamine, triethanolamine, dimethylaminoethanol, tris (di Tertiary amine compounds such as methylaminomethyl) phenol, 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, 1- Benzyl-2-phenylimidazole, 1-benzyl-2-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethyl Imidazole compounds such as imidazole, 2,4-diamino-6- (2'-methylimidazolyl- (1 '))-ethyl-s-triazine, 2-heptadecyl imidazole, trialkylphosphine ( Tributylphosphine, etc.), dialkylarylphosphine (dimethylphenylphosphine, etc.), alkyldiarylphosphine (methyldiphenylphosphine, etc.), triphenylphosphine, alkyl substituted triphenyl Organic phosphine compounds such as phosphine, and addition of maleic anhydride, 1,4-benzoquinone, 2,5-methylquinone, 1,4-naphthoquinone, 2,3-dimethyl to these organic phosphine compounds Benzoquinone, 2,6-dimethylbenzoquinone, 2,3-dimethoxy-5-methyl-1,4-benzene , 2,3-dimethoxy-1,4-benzoquinone, and quinone compounds such as phenyl-1,4-benzoquinone; and compounds having a π bond such as diazophenylmethane and phenol resin Compounds having an intramolecular polarization and derivatives thereof. Further examples include phenylboron salts such as 2-ethyl-4-methylimidazole tetraphenylborate and N-methylmorpholine tetraphenylborate. Moreover, as a latent hardening accelerator, the core-shell particle which consists of a normal temperature solid amine compound as a core and coat | covers the shell of a normal temperature solid epoxy compound is mentioned. A hardening accelerator may be used individually by 1 type, and may be used in combination of 2 or more type.

於液狀密封材包含硬化促進劑的情況下，所述硬化促進劑的量並無特別限制，但相對於環氧樹脂100質量份，較佳為0.1質量份～40質量份，更佳為1質量份～20質量份。When the liquid sealing material contains a hardening accelerator, the amount of the hardening accelerator is not particularly limited, but it is preferably 0.1 to 40 parts by mass, more preferably 1 to 100 parts by mass of the epoxy resin. Part by mass to 20 parts by mass.

＜可撓劑＞ 就提升耐熱衝擊性、減少對於半導體器件的應力等觀點而言，液狀密封材視需要亦可含有可撓劑。 可撓劑並無特別限制，可自樹脂組成物中一般所使用的可撓劑中選擇。其中，較佳為橡膠粒子。作為橡膠粒子，可列舉：苯乙烯-丁二烯橡膠（styrene butadiene rubber，SBR）、腈-丁二烯橡膠（nitrile-butadiene rubber，NBR）、丁二烯橡膠（butadiene rubber，BR）、胺基甲酸酯橡膠（urethane rubber，UR）、丙烯酸橡膠（acrylic rubber，AR）等粒子。該些中，就耐熱性及耐濕性的觀點而言，較佳為丙烯酸橡膠的粒子，更佳為具有核殼結構的丙烯酸系聚合體的粒子（即，核殼型丙烯酸橡膠粒子）。<Flexible Agent> From the viewpoint of improving thermal shock resistance and reducing stress on a semiconductor device, the liquid sealing material may contain a flexible agent as necessary. The flexible agent is not particularly limited and may be selected from flexible agents generally used in resin compositions. Among these, rubber particles are preferred. Examples of the rubber particles include styrene butadiene rubber (SBR), nitrile-butadiene rubber (NBR), butadiene rubber (BR), and amino groups Particles such as urethane rubber (UR) and acrylic rubber (AR). Among these, from the viewpoint of heat resistance and moisture resistance, particles of acrylic rubber are preferred, and particles of acrylic polymer having a core-shell structure (that is, core-shell acrylic rubber particles) are more preferred.

另外，亦可較佳地使用矽酮橡膠粒子。作為矽酮橡膠粒子，可列舉：將直鏈狀的聚二甲基矽氧烷、聚甲基苯基矽氧烷、聚二苯基矽氧烷等聚有機矽氧烷交聯所得的矽酮橡膠粒子，利用矽酮樹脂將矽酮橡膠粒子的表面被覆而成者，藉由乳化聚合等所得的包含固體矽酮粒子的核與丙烯酸樹脂等有機聚合體的殼的核-殼聚合體粒子等。該些矽酮橡膠粒子的形狀可為非晶形，亦可為球形，但為了將液狀密封材的黏度抑制得低，較佳為球形者。該些矽酮橡膠粒子例如可自東麗道康寧矽酮（Toray Dow Corning Silicone）股份有限公司、信越化學工業股份有限公司等獲取市售品。In addition, silicone rubber particles can also be preferably used. Examples of the silicone rubber particles include silicones obtained by cross-linking polyorganosiloxanes such as linear polydimethylsiloxane, polymethylphenylsiloxane, and polydiphenylsiloxane. Rubber particles, those obtained by coating the surface of silicone rubber particles with a silicone resin, and core-shell polymer particles containing a core of solid silicone particles and a shell of an organic polymer such as acrylic resin, etc., obtained by emulsion polymerization or the like . The shape of these silicone rubber particles may be amorphous or spherical, but in order to suppress the viscosity of the liquid sealing material to be low, a spherical one is preferred. These silicone rubber particles are commercially available from Toray Dow Corning Silicone Co., Ltd., Shin-Etsu Chemical Industry Co., Ltd., and the like.

＜偶合劑＞ 出於提高樹脂成分與無機填充材、或者樹脂成分與線的界面中的接著性的目的，液狀密封材亦可含有偶合劑。偶合劑可用於無機填充材的表面處理中，亦可與無機填充材分開調配。<Coupling Agent> The liquid sealing material may contain a coupling agent for the purpose of improving adhesion at the interface between the resin component and the inorganic filler, or the resin component and the thread. The coupling agent can be used in the surface treatment of the inorganic filler, and can also be formulated separately from the inorganic filler.

偶合劑並無特別限制，可使用公知者。例如可列舉：具有胺基（1級、2級或3級）的矽烷化合物、環氧矽烷、巰基矽烷、烷基矽烷、脲基矽烷、乙烯基矽烷等各種矽烷化合物，鈦化合物，鋁螯合劑類，鋁/鋯系化合物等。偶合劑可單獨使用一種，亦可將兩種以上組合使用。The coupling agent is not particularly limited, and a known one can be used. For example, various silane compounds such as silane compounds having an amine group (level 1, 2, or 3), epoxy silanes, mercapto silanes, alkyl silanes, ureido silanes, vinyl silanes, titanium compounds, and aluminum chelating agents can be listed. Type, aluminum / zirconium compounds, etc. The coupling agents may be used singly or in combination of two or more kinds.

作為矽烷偶合劑，具體而言，可列舉：乙烯基三氯矽烷、乙烯基三乙氧基矽烷、乙烯基三(β-甲氧基乙氧基)矽烷、γ-甲基丙烯醯氧基丙基三甲氧基矽烷、β-(3,4-環氧環己基)乙基三甲氧基矽烷、γ-縮水甘油氧基丙基三甲氧基矽烷、γ-縮水甘油氧基丙基甲基二甲氧基矽烷、乙烯基三乙醯氧基矽烷、γ-巰基丙基三甲氧基矽烷、γ-胺基丙基三甲氧基矽烷、γ-胺基丙基甲基二甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、γ-胺基丙基甲基二乙氧基矽烷、γ-苯胺基丙基三甲氧基矽烷、γ-苯胺基丙基三乙氧基矽烷、γ-(N,N-二甲基)胺基丙基三甲氧基矽烷、γ-(N,N-二乙基)胺基丙基三甲氧基矽烷、γ-(N,N-二丁基)胺基丙基三甲氧基矽烷、γ-(N-甲基)苯胺基丙基三甲氧基矽烷、γ-(N-乙基)苯胺基丙基三甲氧基矽烷、γ-(N,N-二甲基)胺基丙基三乙氧基矽烷、γ-(N,N-二乙基)胺基丙基三乙氧基矽烷、γ-(N,N-二丁基)胺基丙基三乙氧基矽烷、γ-(N-甲基)苯胺基丙基三乙氧基矽烷、γ-(N-乙基)苯胺基丙基三乙氧基矽烷、γ-(N,N-二甲基)胺基丙基甲基二甲氧基矽烷、γ-(N,N-二乙基)胺基丙基甲基二甲氧基矽烷、γ-(N,N-二丁基)胺基丙基甲基二甲氧基矽烷、γ-(N-甲基)苯胺基丙基甲基二甲氧基矽烷、γ-(N-乙基)苯胺基丙基甲基二甲氧基矽烷、N-(三甲氧基矽烷基丙基)乙二胺、N-(二甲氧基甲基矽烷基異丙基)乙二胺、甲基三甲氧基矽烷、二甲基二甲氧基矽烷、甲基三乙氧基矽烷、γ-氯丙基三甲氧基矽烷、六甲基二矽烷、乙烯基三甲氧基矽烷、γ-巰基丙基甲基二甲氧基矽烷等。Specific examples of the silane coupling agent include vinyltrichlorosilane, vinyltriethoxysilane, vinyltri (β-methoxyethoxy) silane, and γ-methacryloxypropane. Trimethoxysilane, β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethyl Oxysilane, vinyltriethoxysilane, γ-mercaptopropyltrimethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminopropylmethyldimethoxysilane, γ- Aminopropyltriethoxysilane, γ-aminopropylmethyldiethoxysilane, γ-anilinepropyltrimethoxysilane, γ-anilinepropyltriethoxysilane, γ- ( N, N-dimethyl) aminopropyltrimethoxysilane, γ- (N, N-diethyl) aminopropyltrimethoxysilane, γ- (N, N-dibutyl) amino Propyltrimethoxysilane, γ- (N-methyl) anilinopropyltrimethoxysilane, γ- (N-ethyl) anilinepropyltrimethoxysilane, γ- (N, N-dimethyl ) Aminopropyltriethoxysilane, γ- (N, N-diethyl) aminopropyltriethoxy Silane, γ- (N, N-dibutyl) aminopropyltriethoxysilane, γ- (N-methyl) anilinepropyltriethoxysilane, γ- (N-ethyl) aniline Propyltriethoxysilane, γ- (N, N-dimethyl) aminopropylmethyldimethoxysilane, γ- (N, N-diethyl) aminopropylmethyldi Methoxysilane, γ- (N, N-dibutyl) aminopropylmethyldimethoxysilane, γ- (N-methyl) anilinepropylmethyldimethoxysilane, γ- (N-ethyl) anilinopropylmethyldimethoxysilane, N- (trimethoxysilylpropyl) ethylenediamine, N- (dimethoxymethylsilylisopropyl) ethylenediamine Amine, methyltrimethoxysilane, dimethyldimethoxysilane, methyltriethoxysilane, γ-chloropropyltrimethoxysilane, hexamethyldisilanes, vinyltrimethoxysilane, γ -Mercaptopropylmethyldimethoxysilane and the like.

作為鈦偶合劑，具體而言，可列舉：異丙基三異硬脂醯基鈦酸酯、異丙基三(二辛基焦磷酸酯)鈦酸酯、異丙基三(N-胺基乙基-胺基乙基)鈦酸酯、四辛基雙(二-十三烷基亞磷酸酯)鈦酸酯、四(2,2-二烯丙基氧基甲基-1-丁基)雙(二-十三烷基)亞磷酸酯鈦酸酯、雙(二辛基焦磷酸酯)氧基乙酸酯鈦酸酯、雙(二辛基焦磷酸酯)伸乙基鈦酸酯、異丙基三辛醯基鈦酸酯、異丙基二甲基丙烯酸異硬脂醯基鈦酸酯、異丙基三-十二烷基苯磺醯基鈦酸酯、異丙基異硬脂醯基二丙烯酸鈦酸酯、異丙基三(二辛基磷酸酯)鈦酸酯、異丙基三枯基苯基鈦酸酯、四異丙基雙(二辛基亞磷酸酯)鈦酸酯等。Specific examples of the titanium coupling agent include isopropyltriisostearylfluorenyl titanate, isopropyltris (dioctyl pyrophosphate) titanate, and isopropyltris (N-amino group). Ethyl-aminoethyl) titanate, tetraoctylbis (di-tridecylphosphite) titanate, tetra (2,2-diallyloxymethyl-1-butyl) ) Bis (di-tridecyl) phosphite titanate, bis (dioctyl pyrophosphate) oxyacetate titanate, bis (dioctyl pyrophosphate) ethenyl titanate , Isopropyltrioctylfluorenyl titanate, isostearyl isomethacrylate dititanate, isopropyl tri-dodecylbenzenesulfonyl titanate, isopropyl isostearyl Diacrylic acid titanate, isopropyltris (dioctyl phosphate) titanate, isopropyltricumylphenyl titanate, tetraisopropylbis (dioctylphosphite) titanate Wait.

於液狀密封材包含偶合劑的情況下，所述偶合劑的量並無特別限制，較佳為相對於無機填充材100質量份而為1質量份～30質量份。When the liquid sealing material contains a coupling agent, the amount of the coupling agent is not particularly limited, but it is preferably 1 to 30 parts by mass based on 100 parts by mass of the inorganic filler.

＜離子捕捉劑＞ 就提升半導體封裝的耐遷移性、耐濕性、高溫放置特性等的觀點而言，液狀密封材亦可含有離子捕捉劑。離子捕捉劑可單獨使用一種，亦可將兩種以上組合使用。<Ion trapping agent> From the viewpoint of improving migration resistance, moisture resistance, and high-temperature storage characteristics of a semiconductor package, the liquid sealing material may contain an ion trapping agent. The ion trapping agents may be used singly or in combination of two or more kinds.

作為離子捕捉劑，可列舉下述組成式（V）及組成式（VI）所表示的陰離子交換體。 Mg1-a Ala (OH)2 (CO3 )a/2 ·mH2 O ···（V） （0＜a≦0.5，m為正數） BiOa (OH)b (NO3 )c ···（VI） （0.9≦a≦1.1、0.6≦b≦0.8、0.2≦c≦0.4）Examples of the ion trapping agent include anion exchangers represented by the following composition formula (V) and composition formula (VI). Mg 1-a Al a (OH) 2 (CO 3 ) a / 2 · mH 2 O ··· (V) (0 <a ≦ 0.5, m is a positive number) BiO a (OH) b (NO 3 ) c · (VI) (0.9 ≦ a ≦ 1.1, 0.6 ≦ b ≦ 0.8, 0.2 ≦ c ≦ 0.4)

所述式（V）的化合物可作為市售品（協和化學工業股份有限公司製造的商品名「DHT-4A」）而獲取。另外，所述式（VI）的化合物可作為市售品（東亞合成股份有限公司製造的商品名「IXE500」）而獲取。所述化合物以外的陰離子交換體亦可用作離子捕捉劑。例如可列舉選自鎂、鋁、鈦、鋯、銻等中的元素的含水氧化物等。The compound of the formula (V) can be obtained as a commercially available product (trade name "DHT-4A" manufactured by Kyowa Chemical Industry Co., Ltd.). In addition, the compound of the formula (VI) can be obtained as a commercially available product (trade name "IXE500" manufactured by Toa Synthesis Co., Ltd.). Anion exchangers other than the compounds can also be used as ion trapping agents. Examples include hydrous oxides of elements selected from magnesium, aluminum, titanium, zirconium, antimony, and the like.

於液狀密封材包含離子捕捉劑的情況下，所述離子捕捉劑的量並無特別限制。例如較佳為液狀密封材整體的0.1質量%～3.0質量%，更佳為0.3質量%～1.5質量%。When the liquid sealing material contains an ion trapping agent, the amount of the ion trapping agent is not particularly limited. For example, it is preferably 0.1% by mass to 3.0% by mass of the entire liquid sealing material, and more preferably 0.3% by mass to 1.5% by mass.

於離子捕捉劑為粒子狀的情況下，其體積平均粒徑（D50%）較佳為0.1 μm～3.0 μm。另外，最大粒徑較佳為10 μm以下。When the ion trapping agent is particulate, the volume average particle diameter (D50%) thereof is preferably 0.1 μm to 3.0 μm. The maximum particle diameter is preferably 10 μm or less.

＜其他成分＞ 液狀密封材視需要亦可含有所述成分以外的成分。例如視需要可調配染料、碳黑等著色劑、稀釋劑、調平劑、消泡劑等。<Other components> The liquid sealing material may contain components other than the said component as needed. For example, colorants such as dyes, carbon black, diluents, leveling agents, and defoamers can be adjusted as needed.

4b.第2密封層 第2密封層4b包含絕緣性樹脂塗佈材的乾燥塗膜，並藉由第1密封層4a形成後塗佈所述絕緣性塗佈材而形成。所述第2密封層4b作為針對線而言的絕緣保護層發揮功能。4b. Second sealing layer The second sealing layer 4b includes a dry coating film of an insulating resin coating material, and is formed by applying the insulating coating material after the first sealing layer 4a is formed. The second sealing layer 4b functions as an insulating protective layer for a wire.

所述絕緣性樹脂塗佈材具有以下記載的一個以上的特性。 （i）至少成膜後的絕緣破壞電壓為150 kV/mm以上。 （ii）含有平均粒徑0.1 μm～5.0 μm的樹脂填料。 （iii）25℃下的黏度為30 Pa·s～500 Pa·s。 （iv）25℃下的觸變係數為2.0～10.0。 （v）加熱成膜後，絕緣性樹脂成分與樹脂填料變得均勻，不會產生絕緣性樹脂與填料的界面。因此，雖為薄膜，但可保證高絕緣性。The insulating resin coating material has one or more characteristics described below. (I) At least the dielectric breakdown voltage after film formation is 150 kV / mm or more. (Ii) A resin filler containing an average particle diameter of 0.1 μm to 5.0 μm. (Iii) The viscosity at 25 ° C is 30 Pa · s to 500 Pa · s. (Iv) The thixotropic coefficient at 25 ° C is 2.0 to 10.0. (V) After the film is formed by heating, the insulating resin component and the resin filler become uniform, and an interface between the insulating resin and the filler does not occur. Therefore, although it is a thin film, high insulation can be ensured.

關於絕緣性樹脂塗佈材，於塗佈時根據作為塗佈對象的半導體元件的形狀而有產生空間之虞。例如，於保護半導體元件中的線上部的情況下，將線的端部堵住，藉此，於線下部形成空間，且於之後的密封步驟中，亦有密封材並不順利地侵入之虞。於半導體元件中存在空間的情況下，由於濕度的影響等大大影響半導體元件的可靠性下降，因此，通常不容許半導體元件中的空間部分的產生。Regarding the insulating resin coating material, space may be generated depending on the shape of the semiconductor element to be coated during coating. For example, in the case of protecting the upper part of the wire in the semiconductor element, the end of the wire is blocked, thereby forming a space in the lower part of the wire, and in the subsequent sealing step, the sealing material may not be smoothly penetrated. . When there is space in the semiconductor element, the reliability of the semiconductor element is greatly reduced due to the influence of humidity and the like. Therefore, the generation of a space portion in the semiconductor element is generally not allowed.

為了避免此種半導體元件中、或線部的空間產生，而利用事先說明的液狀密封材預先將線下部密封，藉此，可抑制半導體元件中的孔隙的產生，從而改善半導體元件的可靠性。液狀密封材將線下部的空間部分填充，不僅有助於保證半導體的可靠性，亦具有保護線自身的效果。線亦存在由於元件密封步驟中的壓力而塌陷的情況。但藉由利用液狀密封材預先密封，亦可避免線的塌陷。In order to avoid the generation of space in the semiconductor element or the wire portion, the lower portion of the wire is sealed in advance with the liquid sealing material described in advance, thereby suppressing the generation of voids in the semiconductor element and improving the reliability of the semiconductor element. . The liquid sealing material partially fills the space below the wire, which not only helps to ensure the reliability of the semiconductor, but also has the effect of protecting the wire itself. The wire may also collapse due to the pressure during the component sealing step. However, by using a liquid sealing material to seal in advance, it is also possible to avoid the collapse of the wire.

一實施形態中，絕緣性樹脂塗佈材較佳為成膜後的絕緣破壞電壓為150 kV/mm以上，並含有平均粒徑0.1 μm～5.0 μm的樹脂填料，25℃下的黏度為30 Pa·s～500 Pa·s，且觸變係數為2.0～10.0。In one embodiment, the insulating resin coating material preferably has a dielectric breakdown voltage of 150 kV / mm or more after film formation, contains a resin filler having an average particle diameter of 0.1 μm to 5.0 μm, and has a viscosity at 25 ° C of 30 Pa · S to 500 Pa · s, and the thixotropic coefficient is 2.0 to 10.0.

成膜後的絕緣破壞電壓較佳為150 kV/mm以上，進而佳為200 kV/mm以上。一實施形態中，根據絕緣性樹脂塗佈材，可獲得200 kV/mm以上的絕緣破壞電壓，可有助於半導體元件的薄型化。The dielectric breakdown voltage after film formation is preferably 150 kV / mm or more, and more preferably 200 kV / mm or more. In one embodiment, an insulating resin coating material can achieve an insulation breakdown voltage of 200 kV / mm or more, which can contribute to the reduction in thickness of a semiconductor device.

絕緣性樹脂可自聚醯胺、聚醯胺醯亞胺、聚醯亞胺等高耐熱性樹脂中選擇。一實施形態中，絕緣性樹脂塗佈材較佳為包含選自由聚醯胺、聚醯胺醯亞胺、及聚醯亞胺所組成的群組中的至少一種絕緣性樹脂。特別是就半導體元件形成時無需醯亞胺化的高溫處理的方面而言，較佳為聚醯胺、聚醯胺醯亞胺，就高耐熱性的方面而言，更佳為聚醯胺醯亞胺樹脂。關於樹脂，只要為與樹脂密封構件的密接力優異的高耐熱的樹脂，則可應用。只要聚醯亞胺具有即便於醯亞胺基形成後亦可溶於溶媒的樹脂結構，則就耐熱性的觀點而言，亦存在最佳為聚醯亞胺的情況。The insulating resin can be selected from highly heat-resistant resins such as polyimide, polyimide, and imine. In one embodiment, the insulating resin coating material preferably contains at least one insulating resin selected from the group consisting of polyimide, polyimide, and imine. In particular, polyimide and polyamidoimide are preferred in terms of high-temperature treatment that does not require amidation during the formation of a semiconductor device, and polyimide is more preferred in terms of high heat resistance. Imine resin. The resin is applicable as long as it is a highly heat-resistant resin excellent in adhesion with a resin sealing member. As long as the polyfluorene imide has a resin structure that is soluble in a solvent even after the fluorene imine group is formed, from the viewpoint of heat resistance, a polyfluorene imine may be optimal.

以下，對構成絕緣性樹脂塗佈材的成分進行說明。絕緣性樹脂塗佈材包含：以質量比6：4～9：1包含第一極性溶媒（A1）與具有較第一極性溶媒（A1）的沸點低的沸點的第二極性溶媒（A2）的混合溶媒；於室溫下可溶於第一極性溶媒（A1）與第二極性溶媒（A2）的混合溶媒的絕緣耐熱性樹脂（B）；以及於室溫下可溶於第一極性溶媒（A1）、不溶於第二極性溶媒（A2）、且不溶於第一極性溶媒（A1）與第二極性溶媒（A2）的混合溶媒的絕緣耐熱性樹脂（C）。此處，本說明書中記載的所謂「室溫」為25℃。Hereinafter, components constituting the insulating resin coating material will be described. The insulating resin coating material includes a first polar solvent (A1) and a second polar solvent (A2) having a lower boiling point than the first polar solvent (A1) in a mass ratio of 6: 4 to 9: 1. Mixed solvent; insulating heat-resistant resin (B) soluble in a mixed solvent of the first polar solvent (A1) and the second polar solvent (A2) at room temperature; and soluble in the first polar solvent (B) at room temperature ( A1), an insulating heat-resistant resin (C) that is insoluble in the second polar solvent (A2) and insoluble in the mixed solvent of the first polar solvent (A1) and the second polar solvent (A2). Here, the "room temperature" described in this specification is 25 degreeC.

絕緣耐熱性樹脂（B）於室溫下可溶於第一極性溶媒（A1）與第二極性溶媒（A2）的混合溶媒，絕緣耐熱性樹脂（C）於室溫下不溶於第一極性溶媒（A1）與第二極性溶媒（A2）的混合溶媒。因此，絕緣性樹脂塗佈材中，絕緣耐熱性樹脂（C）分散於與第一極性溶媒（A1）、第二極性溶媒（A2）及絕緣耐熱性樹脂（B）的混合溶媒中，並作為填料起作用。藉此，特別是可容易地調整為適於為了形成線上部的第2密封層而以分配器方式供給絕緣性樹脂塗佈材的觸變值。進而，若將絕緣性樹脂塗佈材加熱至絕緣耐熱性樹脂（C）溶解的溫度為止，則絕緣耐熱性樹脂（C）溶解，從而填料消失。藉此，可賦予精密的解析度，並且提升樹脂膜的表面的平坦性。The insulating heat-resistant resin (B) is soluble in a mixed solvent of the first polar solvent (A1) and the second polar solvent (A2) at room temperature, and the insulating heat-resistant resin (C) is insoluble in the first polar solvent at room temperature. (A1) A mixed solvent with a second polar solvent (A2). Therefore, in the insulating resin coating material, the insulating heat-resistant resin (C) is dispersed in a mixed solvent with the first polar solvent (A1), the second polar solvent (A2), and the insulating heat-resistant resin (B) and used as The filler works. Thereby, in particular, it is possible to easily adjust the thixotropic value suitable for supplying the insulating resin coating material by a dispenser method in order to form the second sealing layer on the upper part of the wire. Further, when the insulating resin coating material is heated to a temperature at which the insulating heat-resistant resin (C) is dissolved, the insulating heat-resistant resin (C) is dissolved, and the filler disappears. Thereby, precise resolution can be provided, and the flatness of the surface of a resin film can be improved.

作為第一極性溶媒（A1）及第二極性溶媒（A2），例如可列舉：二乙二醇單甲醚、二乙二醇單乙醚、三乙二醇單甲醚、三乙二醇單乙醚、四乙二醇單甲醚、四乙二醇單乙醚等聚醚醇系溶媒， 二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丙醚、二乙二醇二丁醚、三乙二醇二甲醚、三乙二醇二乙醚、三乙二醇二丙醚、三乙二醇二丁醚、四乙二醇二甲醚、四乙二醇二乙醚、四乙二醇二丙醚、四乙二醇二丁醚等醚系溶媒， 二甲基亞碸、二乙基亞碸、二甲基碸、環丁碸等含硫系溶媒， 乙酸乙酯、乙酸丁酯、乙酸溶纖劑、乙基溶纖劑乙酸酯、丁基溶纖劑乙酸酯等酯系溶媒， 甲基乙基酮、甲基異丁基酮、環己酮、苯乙酮等酮系溶媒， N-甲基吡咯啶酮、二甲基乙醯胺、二甲基甲醯胺、1,3-二甲基-3,4,5,6-四氫-2(1H)-嘧啶酮、1,3-二甲基-2-咪唑啶酮等含氮系溶媒， 甲苯、二甲苯等芳香族烴系溶媒， γ-丁內酯、γ-戊內酯、γ-己內酯、γ-庚內酯、α-乙醯基-γ-丁內酯、ε-己內酯等內酯系溶媒， 丁醇、辛醇、乙二醇、丙三醇（glycerine）等醇系溶媒，及 苯酚、甲酚、二甲苯酚等酚系溶媒等。Examples of the first polar solvent (A1) and the second polar solvent (A2) include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether, and triethylene glycol monoethyl ether. Polyether alcohol solvents, such as tetraethylene glycol monomethyl ether, tetraethylene glycol monoethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol diethylene glycol Butyl ether, triethylene glycol dimethyl ether, triethylene glycol diethyl ether, triethylene glycol dipropyl ether, triethylene glycol dibutyl ether, tetraethylene glycol dimethyl ether, tetraethylene glycol diethyl ether, Ether solvents such as ethylene glycol dipropyl ether and tetraethylene glycol dibutyl ether; sulfur-containing solvents such as dimethyl fluorene, diethyl fluorene, dimethyl fluorene, and cyclobutyl fluorene; ethyl acetate, acetic acid Ester solvents such as butyl ester, acetic acid cellosolve, ethyl cellosolve acetate, and butyl cellosolve acetate; ketones such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, and acetophenone System solvent, N-methylpyrrolidone, dimethylacetamide, dimethylformamide, 1,3-dimethyl-3,4,5,6-tetrahydro-2 (1H) -pyrimidine Ketones, 1,3-dimethyl-2-imidazolidone and other nitrogen-containing solvents, toluene Aromatic hydrocarbon solvents such as xylene, γ-butyrolactone, γ-valerolactone, γ-caprolactone, γ-heptanolactone, α-ethylamyl-γ-butyrolactone, ε-caprolactone Isolactone solvents, alcohol solvents such as butanol, octanol, ethylene glycol, glycerine, and phenol solvents such as phenol, cresol, and xylenol.

第一極性溶媒（A1）及第二極性溶媒（A2）的組合只要自該些溶媒中根據絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）的種類而適宜選擇並使用即可。The combination of the first polar solvent (A1) and the second polar solvent (A2) may be appropriately selected and used according to the types of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) from these solvents.

作為第一極性溶媒（A1），較佳為可列舉： N-甲基吡咯啶酮、二甲基乙醯胺、二甲基甲醯胺、1,3-二甲基-3,4,5,6-四氫-2(1H)-嘧啶酮、1,3-二甲基-2-咪唑啶酮等含氮系溶媒， 二甲基亞碸、二乙基亞碸、二甲基亞碸、二乙基亞碸、二甲基碸、環丁碸等含硫系溶媒， γ-丁內酯、γ-戊內酯、γ-己內酯、γ-庚內酯、α-乙醯基-γ-丁內酯、ε-己內酯等內酯系溶媒， 甲基乙基酮、甲基異丁基酮、環己酮、苯乙酮等酮系溶媒，及 丁醇、辛醇、乙二醇、丙三醇等醇系溶媒等。 於後述絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）分別獨立地為選自聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、或聚醯亞胺樹脂及聚醯胺醯亞胺樹脂的前驅物中的至少一者的情況下，作為第一極性溶媒（A1），特佳為γ-丁內酯。Examples of the first polar solvent (A1) include N-methylpyrrolidone, dimethylacetamide, dimethylformamide, and 1,3-dimethyl-3,4,5. Nitrogen-containing solvents such as 1,6-tetrahydro-2 (1H) -pyrimidone, 1,3-dimethyl-2-imidazolidinone, dimethyl sulfene, diethyl fluorene, dimethyl fluorene Sulfur-containing solvents such as diethyl fluorene, dimethyl fluorene, cyclobutyl fluorene, γ-butyrolactone, γ-valerolactone, γ-caprolactone, γ-heptyllactone, α-ethylidene -γ-butyrolactone, ε-caprolactone and other lactone solvents, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, acetophenone and other ketone solvents, and butanol, octanol, Alcohol-based solvents such as ethylene glycol and glycerol. The insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) described below are each independently selected from the group consisting of polyimide resin, polyimide resin, polyimide resin, polyimide resin, and polyimide resin. In the case of at least one of the precursors of amidamine and imine resin, as the first polar solvent (A1), γ-butyrolactone is particularly preferred.

作為第二極性溶媒（A2），較佳為可列舉： 二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇二丙醚、二乙二醇二丁醚、三乙二醇二甲醚、三乙二醇二乙醚、三乙二醇二丙醚、三乙二醇二丁醚、四乙二醇二甲醚、四乙二醇二乙醚、四乙二醇二丙醚、四乙二醇二丁醚等醚系溶媒， 二乙二醇單甲醚、二乙二醇單乙醚、三乙二醇單甲醚、三乙二醇單乙醚、四乙二醇單甲醚、四乙二醇單乙醚等聚醚醇系溶媒，及 乙酸乙酯、乙酸丁酯、乙酸溶纖劑、乙基溶纖劑乙酸酯、丁基溶纖劑乙酸酯等酯系溶媒等。 於後述絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）分別獨立地為選自聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、或聚醯亞胺樹脂及聚醯胺醯亞胺樹脂的前驅物中的至少一者的情況下，作為第二極性溶媒（A2），較佳為聚醚醇系溶媒、或酯系溶媒。Examples of the second polar solvent (A2) include diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, and triethylene glycol. Dimethyl ether, triethylene glycol diethyl ether, triethylene glycol dipropyl ether, triethylene glycol dibutyl ether, tetraethylene glycol dimethyl ether, tetraethylene glycol diethyl ether, tetraethylene glycol dipropyl ether, Ether solvents such as tetraethylene glycol dibutyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, tetraethylene glycol monomethyl ether, Polyether alcohol solvents such as tetraethylene glycol monoethyl ether, and ester solvents such as ethyl acetate, butyl acetate, cellosolve acetate, ethylcellosolve acetate, and butylcellosolve acetate. The insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) described below are each independently selected from the group consisting of polyimide resin, polyimide resin, polyimide resin, polyimide resin, and polyimide resin. In the case of at least one of the precursors of amidamine and imine resin, the second polar solvent (A2) is preferably a polyether alcohol-based solvent or an ester-based solvent.

就提升絕緣性樹脂塗佈材的處理性的觀點而言，絕緣性樹脂塗佈材較佳為第一極性溶媒（A1）的沸點與第二極性溶媒（A2）的沸點之差為10℃～100℃，更佳為10℃～50℃，進而佳為10℃～30℃。另外，就可延長塗佈時的絕緣性樹脂塗佈材的可使用時間的觀點而言，第一極性溶媒（A1）與第二極性溶媒（A2）兩者的沸點較佳為100℃以上，更佳為150℃以上。From the viewpoint of improving the handleability of the insulating resin coating material, the difference between the boiling point of the first polar solvent (A1) and the boiling point of the second polar solvent (A2) is preferably 10 ° C to 100 ° C, more preferably 10 ° C to 50 ° C, even more preferably 10 ° C to 30 ° C. In addition, from the viewpoint of extending the usable time of the insulating resin coating material during coating, the boiling points of both the first polar solvent (A1) and the second polar solvent (A2) are preferably 100 ° C or higher, It is more preferably 150 ° C or higher.

絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）較佳為分別獨立地為選自聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、或聚醯亞胺樹脂及聚醯胺醯亞胺樹脂的前驅物中的至少一者。作為聚醯胺樹脂、聚醯亞胺樹脂、聚醯胺醯亞胺樹脂、或聚醯亞胺樹脂及聚醯胺醯亞胺樹脂的前驅物，例如可列舉藉由芳香族、脂肪族、或脂環式二胺化合物與具有2個～4個羧基的多元羧酸的反應而獲得者。所謂聚醯亞胺樹脂及聚醯胺醯亞胺樹脂的前驅物，是指進行脫水閉環而形成聚醯亞胺樹脂、或聚醯胺醯亞胺樹脂的、作為即將脫水閉環前的物質的聚醯胺酸。再者，絕緣耐熱性樹脂（C）較佳為例如以60℃以上（較佳為60℃～200℃、更佳為100℃～180℃）加熱的情況下，可溶於所述混合溶媒。The insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) are preferably each independently selected from the group consisting of polyimide resin, polyimide resin, polyimide resin, or polyimide resin, and At least one of the precursors of a polyimide resin. Examples of the precursors of polyimide resin, polyimide resin, polyimide resin, or polyimide resin and polyimide resin include, for example, aromatic, aliphatic, or Obtained by the reaction of an alicyclic diamine compound with a polycarboxylic acid having 2 to 4 carboxyl groups. The precursors of polyimide resins and polyamidoimide resins are polymers that are dehydrated and closed to form polyimide resins or polyamidoimide resins, which are substances immediately before dehydration and ring closure. Amino acid. The insulating heat-resistant resin (C) is preferably soluble in the mixed solvent when heated at, for example, 60 ° C or higher (preferably 60 ° C to 200 ° C, more preferably 100 ° C to 180 ° C).

作為芳香族、脂肪族、或脂環式二胺化合物，可列舉：包含伸芳基、可具有不飽和鍵的伸烷基、或可具有不飽和鍵的伸環烷基、或者將該些組合而成的基的二胺化合物。該些基亦可經由碳原子、氧原子、硫原子、矽原子、或將該些原子組合而成的基而鍵結。另外，伸烷基的碳骨架上所鍵結的氫原子亦可經氟原子取代。就耐熱性及機械強度的觀點而言，較佳為芳香族二胺。Examples of the aromatic, aliphatic, or alicyclic diamine compound include an aryl group, an alkylene group which may have an unsaturated bond, or an alkylene group which may have an unsaturated bond, or a combination thereof Based on the diamine compound. These groups may be bonded via a carbon atom, an oxygen atom, a sulfur atom, a silicon atom, or a combination of these atoms. In addition, a hydrogen atom bonded to the carbon skeleton of the alkylene group may be substituted with a fluorine atom. From the viewpoint of heat resistance and mechanical strength, an aromatic diamine is preferred.

作為具有2個～4個羧基的多元羧酸，可列舉：二羧酸或其反應性酸衍生物、三羧酸或其反應性酸衍生物、四羧酸二酐。該些化合物可為於芳基或環內可具有交聯結構或者不飽和鍵的環烷基上鍵結有羧基的二羧酸、三羧酸或該些的反應性酸衍生物、或者於芳基或環內可具有交聯結構或者不飽和鍵的環烷基上鍵結有羧基的四羧酸二酐，該二羧酸、三羧酸或該些的反應性酸衍生物、以及四羧酸二酐可經由單鍵、或者經由碳原子、氧原子、硫原子、矽原子、或將該些原子組合而成的基而鍵結。另外，伸烷基的碳骨架上所鍵結的氫原子亦可經氟原子取代。該些化合物中，就耐熱性及機械強度的觀點而言，較佳為四羧酸二酐。芳香族、脂肪族、或脂環式二胺化合物與具有2個～4個羧基的多元羧酸的組合可根據反應性等而適宜選擇。Examples of the polycarboxylic acid having 2 to 4 carboxyl groups include a dicarboxylic acid or a reactive acid derivative thereof, a tricarboxylic acid or a reactive acid derivative thereof, and a tetracarboxylic dianhydride. These compounds may be a dicarboxylic acid, a tricarboxylic acid or a reactive acid derivative thereof having a carboxyl group bonded to a cycloalkyl group which may have a crosslinked structure or an unsaturated bond in an aryl group or a ring, or A tetracarboxylic dianhydride having a carboxyl group bonded to a cycloalkyl group which may have a crosslinked structure or an unsaturated bond within a group or a ring, the dicarboxylic acid, tricarboxylic acid or reactive acid derivative thereof, and tetracarboxylic acid The acid dianhydride may be bonded via a single bond, or via a carbon atom, an oxygen atom, a sulfur atom, a silicon atom, or a combination of these atoms. In addition, a hydrogen atom bonded to the carbon skeleton of the alkylene group may be substituted with a fluorine atom. Among these compounds, tetracarboxylic dianhydride is preferred from the viewpoints of heat resistance and mechanical strength. The combination of an aromatic, aliphatic, or alicyclic diamine compound and a polycarboxylic acid having 2 to 4 carboxyl groups can be appropriately selected depending on reactivity and the like.

反應可不使用溶媒或者於有機溶媒的存在下進行。反應溫度較佳為設為25℃～250℃，反應時間可根據批次（batch）的規模、所採用的反應條件等而適宜選擇。The reaction can be performed without using a solvent or in the presence of an organic solvent. The reaction temperature is preferably set to 25 ° C to 250 ° C, and the reaction time can be appropriately selected depending on the scale of the batch, the reaction conditions used, and the like.

對聚醯亞胺樹脂前驅物或聚醯胺醯亞胺樹脂前驅物進行脫水閉環而製成聚醯亞胺樹脂或聚醯胺醯亞胺樹脂的方法亦無特別限制，可使用一般的方法。例如，可使用在常壓或減壓下藉由加熱而脫水閉環的熱閉環法、於觸媒的存在下或觸媒的不存在下使用乙酸酐等脫水劑的化學閉環法等。The method for dehydrating and closing the polyimide resin precursor or polyimide resin imide resin precursor to produce a polyimide resin or polyimide resin is also not particularly limited, and a general method can be used. For example, a thermal closed-loop method that dehydrates and closes the ring by heating under normal pressure or reduced pressure, and a chemical closed-loop method that uses a dehydrating agent such as acetic anhydride in the presence or absence of a catalyst can be used.

熱閉環法較佳為一面將脫水反應中產生的水去除至系統外一面進行。此時，藉由將反應液加熱為80℃～400℃、較佳為100℃～250℃而進行。此時，亦可併用苯、甲苯、二甲苯等之類的與水共沸般的溶劑而將水共沸去除。The thermal closed loop method is preferably performed while removing water generated in the dehydration reaction to the outside of the system. At this time, it is performed by heating the reaction liquid to 80 ° C to 400 ° C, preferably 100 ° C to 250 ° C. At this time, water may be removed azeotropically by using a solvent such as benzene, toluene, xylene and the like together with azeotrope with water.

化學閉環法較佳為於化學脫水劑的存在下，於0℃～120℃、較佳為10℃～80℃下使其反應。作為化學脫水劑，例如較佳為乙酸酐、丙酸酐、丁酸酐、苯甲酸酐等酸酐；二環己基碳二醯亞胺等碳二醯亞胺化合物等。此時，較佳為併用吡啶、異喹啉、三甲基胺、三乙基胺、胺基吡啶、咪唑等促進環化反應的物質。化學脫水劑相對於二胺化合物的總量而使用90莫耳%～600莫耳%，促進環化反應的物質相對於二胺化合物的總量而使用40莫耳%～300莫耳%。另外，亦可使用亞磷酸三苯酯、亞磷酸三環己酯、磷酸三苯酯、磷酸、五氧化磷等磷化合物、硼酸、硼酸酐等硼化合物等脫水觸媒。The chemical ring closure method is preferably carried out in the presence of a chemical dehydrating agent at a temperature of 0 ° C to 120 ° C, preferably 10 ° C to 80 ° C. Examples of the chemical dehydrating agent include acid anhydrides such as acetic anhydride, propionic anhydride, butyric anhydride, and benzoic anhydride; and carbodiimide compounds such as dicyclohexylcarbodiimide. In this case, it is preferable to use a substance that promotes the cyclization reaction in combination with pyridine, isoquinoline, trimethylamine, triethylamine, aminopyridine, and imidazole. The chemical dehydrating agent is used in an amount of 90 mol% to 600 mol% with respect to the total amount of the diamine compound, and the substance that promotes the cyclization reaction is used in an amount of 40 mol% to 300 mol% with respect to the total amount of the diamine compound. In addition, dehydration catalysts such as triphenyl phosphite, tricyclohexyl phosphite, triphenyl phosphate, phosphorus compounds such as phosphoric acid and phosphorus pentoxide, and boron compounds such as boric acid and boric anhydride can also be used.

將藉由脫水反應而使醯亞胺化結束的反應液注入至大量過剩的相對於所述第一極性溶媒（A1）及第二極性溶媒（A2）而具有相容性、且相對於絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）而為貧溶媒的甲醇等低級醇、水、或該些的混合物等溶媒中，獲得樹脂的沈澱物，並對其進行過濾，將溶媒乾燥，藉此可獲得聚醯亞胺樹脂或聚醯胺醯亞胺樹脂。就所殘存的離子性雜質的減少化等觀點而言，較佳為熱閉環法。Inject a large amount of excess reaction solution, which is terminated by hydration with dehydration reaction, into the excess of the first polar solvent (A1) and the second polar solvent (A2) to have compatibility and heat resistance to insulation In low-alcohol solvents such as methanol, water, or mixtures thereof, such as low-molecular-weight resins (B) and insulating and heat-resistant resins (C), the resin precipitates are obtained and filtered, and the solvent is dried. Thereby, a polyimide resin or a polyimide resin can be obtained. From the viewpoint of reduction of remaining ionic impurities, a thermal closed-loop method is preferred.

可根據絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）的種類來決定較佳的第一極性溶媒（A1）及第二極性溶媒（A2）的種類。作為第一極性溶媒（A1）及第二極性溶媒（A2）的較佳組合（混合溶媒），例如可列舉下述（a）、（b）兩種。The preferred types of the first polar solvent (A1) and the second polar solvent (A2) can be determined according to the types of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C). Preferred combinations (mixed solvents) of the first polar solvent (A1) and the second polar solvent (A2) include, for example, the following two types (a) and (b).

（a）第一極性溶媒（A1）：N-甲基吡咯啶酮、二甲基乙醯胺等所述含氮系溶媒；二甲基亞碸等所述含硫系溶媒；γ-丁內酯等所述內酯系溶媒；二甲苯酚等所述酚系溶媒、與 第二極性溶媒（A2）：二乙二醇二甲醚等所述醚系溶媒；環己酮等所述酮系溶媒；丁基溶纖劑乙酸酯等所述酯系溶媒；丁醇等所述醇系溶媒；二甲苯等所述芳香族烴系溶媒的組合。 （b）第一極性溶媒（A1）：四乙二醇二甲醚等所述醚系溶媒；環己酮等所述酮系溶媒、與 第二極性溶媒（A2）：丁基溶纖劑乙酸酯、乙酸乙酯等所述酯系溶媒；丁醇等所述醇系溶媒；二乙二醇單乙醚等所述聚醚醇系溶媒；二甲苯等所述芳香族烴系溶媒的組合。(A) The first polar solvent (A1): nitrogen-containing solvents such as N-methylpyrrolidone and dimethylacetamide; sulfur-containing solvents such as dimethylsulfinium; γ-butane Lactone-based solvents such as esters; phenol-based solvents such as xylenol; and second polar solvents (A2): ether-based solvents such as diethylene glycol dimethyl ether; ketones such as cyclohexanone Solvent; a combination of the ester-based solvent such as butyl cellosolve acetate; the alcohol-based solvent such as butanol; and the aromatic hydrocarbon-based solvent such as xylene. (B) The first polar solvent (A1): the ether-based solvent such as tetraethylene glycol dimethyl ether; the ketone-based solvent such as cyclohexanone, and the second polar solvent (A2): butyl cellosolve acetate A combination of the ester-based solvent such as ethyl acetate; the alcohol-based solvent such as butanol; the polyether alcohol-based solvent such as diethylene glycol monoethyl ether; and a combination of the aromatic hydrocarbon-based solvent such as xylene.

作為應用於（a）型的混合溶媒中的絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C），例如可列舉以下者。作為絕緣耐熱性樹脂（B），例如可列舉具有下述式（1）～式（10）所表示的結構單元的樹脂。Examples of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) used in the mixed solvent of the type (a) include the following. Examples of the insulating and heat-resistant resin (B) include resins having a structural unit represented by the following formula (1) to formula (10).

[化1]式（1）中，X為-CH2 -、-O-、-CO-、-SO2 -、或下述式（a）～式（i）所表示的基，式（i）中，p為1～100的整數。[Chemical 1] In formula (1), X is -CH 2- , -O-, -CO-, -SO 2- , or a group represented by the following formulae (a) to (i). In formula (i), p It is an integer from 1 to 100.

[化2] [Chemical 2]

[化3]式（2）中，R1 及R2 分別為氫原子或碳數1～6的烴基，彼此可相同亦可不同。X與式（1）的X相同。[Chemical 3] In the formula (2), R 1 and R 2 are each a hydrogen atom or a hydrocarbon group having 1 to 6 carbon atoms, and may be the same as or different from each other. X is the same as X in formula (1).

[化4]式（3）中，M為下述式（c）、式（h）、式（i）或式（j）所表示的基，式（i）中，p為1～100的整數。[Chemical 4] In the formula (3), M is a base represented by the following formula (c), (h), (i), or (j), and in the formula (i), p is an integer of 1 to 100.

[化5] [Chemical 5]

[化6]式（4）中，X與式（1）的X相同。[Chemical 6] In formula (4), X is the same as X in formula (1).

[化7]式（5）中，X與式（1）的X相同。[Chemical 7] In formula (5), X is the same as X in formula (1).

[化8]式（6）中，R3 及R4 分別為甲基、乙基、丙基、或苯基，彼此可相同亦可不同，X與式（1）的X相同。[Chemical 8] In the formula (6), R 3 and R 4 are each a methyl group, an ethyl group, a propyl group, or a phenyl group, and may be the same as or different from each other, and X is the same as X in the formula (1).

[化9] [Chemical 9]

[化10]式（8）中，x1 為0或2，X與式（1）的X相同。[Chemical 10] In formula (8), x 1 is 0 or 2, and X is the same as X in formula (1).

[化11] [Chemical 11]

[化12] [Chemical 12]

作為絕緣耐熱性樹脂（C），例如可列舉具有下述式（11）～式（20）所表示的結構單元的樹脂。Examples of the insulating and heat-resistant resin (C) include resins having a structural unit represented by the following formula (11) to formula (20).

[化13]式（11）中，Y為下述式（a）、式（c）或式（h）所表示的基。[Chemical 13] In the formula (11), Y is a group represented by the following formula (a), (c), or (h).

[化14] [Chemical 14]

[化15]式（12）中，Y與式（11）的Y相同。再者，*部分相互鍵結（以下相同）。[Chemical 15] In formula (12), Y is the same as Y in formula (11). Furthermore, the * parts are mutually bonded (the same applies hereinafter).

[化16] [Chemical 16]

[化17]式（14）中，Z為-CH2 -、-O-、-CO-、-SO2 -、或者下述式（a）或式（d）所表示的基。[Chemical 17] In formula (14), Z is -CH 2- , -O-, -CO-, -SO 2- , or a group represented by the following formula (a) or formula (d).

[化18] [Chemical 18]

[化19] [Chemical 19]

[化20]式（16）中，Z與式（14）的Z相同。[Chemical 20] In Formula (16), Z is the same as Z of Formula (14).

[化21] [Chemical 21]

[化22] [Chemical 22]

[化23] [Chemical 23]

[化24]式（20）中，X與式（1）的X相同，n及m分別獨立地表示1以上的整數。n與m之比（n/m）較佳為80/20～30/70，更佳為70/30～50/50。[Chemical 24] In formula (20), X is the same as X in formula (1), and n and m each independently represent an integer of 1 or more. The ratio of n to m (n / m) is preferably 80/20 to 30/70, and more preferably 70/30 to 50/50.

所述組合中，較佳為使用內酯系溶媒或含氮系溶媒作為第一極性溶媒（A1），使用醚系溶媒或酯系溶媒作為第二極性溶媒（A2），使用式（1）所表示的樹脂作為絕緣耐熱性樹脂（B），且使用具有式（20）或式（16）所表示的結構單元的樹脂作為絕緣耐熱性樹脂（C）。In the combination, a lactone-based solvent or a nitrogen-containing solvent is preferably used as the first polar solvent (A1), and an ether-based solvent or an ester-based solvent is used as the second polar solvent (A2). The resin represented is the insulating heat resistant resin (B), and a resin having a structural unit represented by the formula (20) or the formula (16) is used as the insulating heat resistant resin (C).

作為應用於（b）型的混合溶媒中的絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C），例如可列舉以下者。 作為絕緣耐熱性樹脂（B），例如使用具有下述式（21）及式（22）所表示的結構單元的樹脂、或者具有所述式（6）所表示的結構單元的聚矽氧烷醯亞胺。Examples of the insulating and heat-resistant resin (B) and the insulating and heat-resistant resin (C) used in the mixed solvent of the type (b) include the following. As the insulating and heat-resistant resin (B), for example, a resin having a structural unit represented by the following formulae (21) and (22) or a polysiloxane having a structural unit represented by the formula (6) is used. Imine.

[化25] [Chemical 25]

[化26]式（22）中，Z1 為-O-、-CO-、或者下述式（d）、式（e）、式（k）或式（l）所表示的基。R5 及R6 分別為下述式（m）或式（n）所表示的基，彼此可相同亦可不同。p為1～100的整數。[Chemical 26] In formula (22), Z 1 is -O-, -CO-, or a group represented by the following formula (d), (e), (k), or (l). R 5 and R 6 are each a group represented by the following formula (m) or formula (n), and may be the same as or different from each other. p is an integer from 1 to 100.

[化27] [Chemical 27]

[化28] [Chemical 28]

作為絕緣耐熱性樹脂（C），例如可列舉：具有所述式（1）的X為下述式（a）、式（b）或式（i）所表示的基的情況下的結構單元的聚醚醯胺醯亞胺、或所述式（5）～式（9）所表示的聚醯亞胺（其中，所述式（5）、式（6）、式（8）中的X為下述式（a）的情況除外）。Examples of the insulating and heat-resistant resin (C) include a structural unit in a case where X having the formula (1) is a group represented by the following formula (a), formula (b), or formula (i). Polyetheramine, imine, or the polyimide represented by the formulae (5) to (9) (wherein X in the formulae (5), (6), and (8) is Except for the following formula (a)).

[化29] [Chemical 29]

[化30]式（i）中，p為1～100的整數。[Chemical 30] In the formula (i), p is an integer of 1 to 100.

調整絕緣性樹脂塗佈材時的原料的投入順序並無特別限制。例如，可將所述絕緣性樹脂塗佈材的原料彙總混合，另外，亦可首先將第一極性溶媒（A1）及第二極性溶媒（A2）混合，並向該混合溶液中混合絕緣耐熱性樹脂（B），其後，對第一極性溶媒（A1）、第二極性溶媒（A2）、及絕緣耐熱性樹脂（B）的混合溶液添加絕緣耐熱性樹脂（C）。There are no particular restrictions on the order of feeding the raw materials when adjusting the insulating resin coating material. For example, the raw materials of the insulating resin coating material may be mixed together, or the first polar solvent (A1) and the second polar solvent (A2) may be mixed first, and the insulation heat resistance may be mixed into the mixed solution. Resin (B), and thereafter, an insulating and heat-resistant resin (C) is added to a mixed solution of the first polar solvent (A1), the second polar solvent (A2), and the insulating and heat-resistant resin (B).

可一面對所述絕緣性樹脂塗佈材的原料混合物進行加熱、攪拌等，直至於第一極性溶媒（A1）、第二極性溶媒（A2）、及絕緣耐熱性樹脂（B）的混合溶液中絕緣耐熱性樹脂（C）充分溶解的溫度為止，一面使其充分混合。The raw material mixture of the insulating resin coating material can be heated, stirred, etc. until the mixed solution of the first polar solvent (A1), the second polar solvent (A2), and the heat-resistant resin (B) The medium-insulation heat-resistant resin (C) is sufficiently mixed until the temperature at which it is sufficiently dissolved.

關於以所述方式獲得的絕緣性樹脂塗佈材，於室溫下於包含第一極性溶媒（A1）、第二極性溶媒（A2）及絕緣耐熱性樹脂（B）的溶液中分散有絕緣耐熱性樹脂（C）。即，絕緣耐熱性樹脂（C）於絕緣性樹脂塗佈材中作為填料而存在，可對絕緣性樹脂塗佈材賦予朝線上部供給時較佳的觸變性。Regarding the insulating resin coating material obtained as described above, the insulation and heat resistance is dispersed in a solution containing the first polar solvent (A1), the second polar solvent (A2), and the heat-resistant resin (B) at room temperature. Resin (C). That is, the insulating heat-resistant resin (C) is present as a filler in the insulating resin coating material, and can provide the insulating resin coating material with good thixotropy when it is supplied to the upper part of the wire.

分散於絕緣性樹脂塗佈材中的絕緣耐熱性樹脂（C）的平均粒徑可為50 μm以下的粒子狀，較佳為0.01 μm～10 μm、更佳為0.1 μm～5 μm。另外，最大粒徑較佳為10 μm、更佳為5 μm。該絕緣耐熱性樹脂（C）的平均粒徑及最大粒徑可藉由使用島津製作所股份有限公司製造的粒度分佈測定裝置SALD-2200而測定。The average particle diameter of the insulating heat-resistant resin (C) dispersed in the insulating resin coating material may be a particle shape of 50 μm or less, preferably 0.01 μm to 10 μm, and more preferably 0.1 μm to 5 μm. The maximum particle diameter is preferably 10 μm, and more preferably 5 μm. The average particle diameter and the maximum particle diameter of the insulating heat-resistant resin (C) can be measured by using a particle size distribution measuring device SALD-2200 manufactured by Shimadzu Corporation.

第一極性溶媒（A1）與第二極性溶媒（A2）的混合比率雖依存於絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）的種類、相對於第一極性溶媒（A1）及第二極性溶媒（A2）而言的溶解度或使用量等，但就使絕緣性樹脂塗佈材的流動性、樹脂膜的解析度、形狀保持性、及表面的平坦性高度地平衡的觀點而言，混合比率（A1：A2）為6：4～9：1，更佳為6.5：3.5～8.5：1.5，特佳為7：3～8：2。Although the mixing ratio of the first polar solvent (A1) and the second polar solvent (A2) depends on the types of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C), the mixing ratio of the first polar solvent (A1) and the first The solubility and the amount of use of the dipolar solvent (A2), but from the viewpoint of highly balancing the fluidity of the insulating resin coating material, the resolution of the resin film, shape retention, and surface flatness The mixing ratio (A1: A2) is 6: 4 to 9: 1, more preferably 6.5: 3.5 to 8.5: 1.5, and particularly preferably 7: 3 to 8: 2.

絕緣性樹脂塗佈材中，相對於絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）的樹脂總量100質量份，較佳為調配100質量份～3500質量份的第一極性溶媒（A1）與第二極性溶媒（A2）的混合溶媒，更佳為調配150質量份～1000質量份。In the insulating resin coating material, the first polar solvent (100 mass parts to 3500 mass parts) is preferably blended with respect to 100 mass parts of the total resin of the insulating heat resistant resin (B) and the insulating heat resistant resin (C). A1) The mixed solvent with the second polar solvent (A2) is more preferably blended with 150 to 1000 parts by mass.

絕緣耐熱性樹脂（B）與絕緣耐熱性樹脂（C）的調配比並無特別限制，可為任意的調配量，但絕緣耐熱性樹脂（C）相對於絕緣耐熱性樹脂（B）的總量100質量份，較佳為調配10質量份～300質量份，若為10質量份～200質量份則更佳。若絕緣耐熱性樹脂（C）的使用量少於10質量份，則有所獲得的耐熱性絕緣性樹脂塗佈材的觸變性下降的傾向，若絕緣耐熱性樹脂（C）的使用量多於300質量份，則有所獲得的樹脂膜的物性下降的傾向。The blending ratio of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) is not particularly limited, and it can be an arbitrary blending amount, but the total amount of the insulating heat-resistant resin (C) relative to the total amount of the insulating heat-resistant resin (B) 100 parts by mass, preferably 10 to 300 parts by mass, and more preferably 10 to 200 parts by mass. When the amount of the insulating heat-resistant resin (C) is less than 10 parts by mass, the thixotropy of the obtained heat-resistant insulating resin coating material tends to decrease. When the amount of the insulating heat-resistant resin (C) is more than At 300 parts by mass, the physical properties of the obtained resin film tend to decrease.

就形狀保持性的觀點而言，絕緣性樹脂塗佈材的25℃下的黏度為30 Pa·s～500 Pa·s，較佳為50～400，更佳為70～300。若25℃下的黏度為30 Pa·s以下，則容易變得難以於印刷時保持形狀。另外，若黏度為500 Pa·s以上，則有操作性容易下降的傾向。黏度可藉由調整絕緣性樹脂塗佈材的不揮發成分濃度（以下設為NV）、第一極性溶媒（A1）、絕緣耐熱性樹脂（B）或絕緣耐熱性樹脂（C）的分子量等而加以控制。例如，使用凝膠滲透層析法對絕緣耐熱性樹脂（B）及絕緣耐熱性樹脂（C）的分子量以標準聚苯乙烯換算進行測定所得的重量平均分子量設為10000～100000、較佳為20000～80000、特佳為30000～60000即可。From the viewpoint of shape retention, the viscosity at 25 ° C. of the insulating resin coating material is 30 Pa · s to 500 Pa · s, preferably 50 to 400, and more preferably 70 to 300. When the viscosity at 25 ° C is 30 Pa · s or less, it becomes easy to make it difficult to maintain the shape during printing. In addition, if the viscosity is 500 Pa · s or more, the workability tends to be easily reduced. The viscosity can be adjusted by adjusting the molecular weight of the non-volatile component of the insulating resin coating material (hereinafter referred to as NV), the molecular weight of the first polar solvent (A1), the insulating heat-resistant resin (B), or the insulating heat-resistant resin (C). Be controlled. For example, the weight average molecular weight obtained by measuring the molecular weights of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) by gel permeation chromatography using standard polystyrene conversion is 10,000 to 100,000, preferably 20,000. It can be from ~ 80,000, especially from 30,000 to 60,000.

絕緣性樹脂塗佈材的觸變係數為2.0～10.0，較佳為2.0～6.0，更佳為2.5～5.5，進而佳為3.0～5.0。若觸變係數未滿2.0，則印刷性下降，若觸變係數超過6.0，則操作性下降，從而難以製作絕緣性樹脂塗佈材。The thixotropic coefficient of the insulating resin coating material is 2.0 to 10.0, preferably 2.0 to 6.0, more preferably 2.5 to 5.5, and even more preferably 3.0 to 5.0. If the thixotropic coefficient is less than 2.0, printability is reduced, and if the thixotropic coefficient exceeds 6.0, operability is reduced, making it difficult to produce an insulating resin coating material.

5.樹脂密封構件 樹脂密封構件是以至少覆蓋所述第2密封層的方式設置。樹脂密封構件較佳為以覆蓋半導體器件與所述第2密封層的上表面的方式設置於基板整個面上。由於已經將線密封，因此無需於樹脂密封構件形成時考慮線流動等問題的發生。樹脂密封構件並無特別限定，可使用本技術領域中眾所周知的材料而構成。5. Resin sealing member The resin sealing member is provided so as to cover at least the second sealing layer. The resin sealing member is preferably provided on the entire surface of the substrate so as to cover the upper surfaces of the semiconductor device and the second sealing layer. Since the wire is already sealed, it is not necessary to consider the occurrence of problems such as wire flow when the resin sealing member is formed. The resin sealing member is not particularly limited, and may be configured using materials well known in the technical field.

作為形成樹脂密封構件的材料，例如可列舉包含環氧樹脂與酚樹脂的硬化性組成物。酚樹脂作為針對環氧樹脂而言的硬化劑而使用。 作為環氧樹脂的具體例，可列舉：聯苯型環氧樹脂、雙酚型（雙酚F型、雙酚A型等）環氧樹脂、三苯基甲烷型環氧樹脂、鄰甲酚酚醛清漆型環氧樹脂、萘型環氧樹脂等。另外，作為酚樹脂的具體例，可列舉：三苯基甲烷型酚樹脂、苯酚芳烷基型酚樹脂、新酚樹脂型酚樹脂、共聚合苯酚芳烷基型酚樹脂、萘酚芳烷基型酚樹脂、伸聯苯基芳烷基型酚樹脂等。可單獨使用該些中的每一種，亦可將兩種以上組合使用。Examples of the material forming the resin sealing member include a curable composition containing an epoxy resin and a phenol resin. A phenol resin is used as a hardening | curing agent with respect to an epoxy resin. Specific examples of the epoxy resin include a biphenyl type epoxy resin, a bisphenol type (bisphenol F type, bisphenol A type, etc.) epoxy resin, a triphenylmethane type epoxy resin, and o-cresol novolac Varnish-type epoxy resin, naphthalene-type epoxy resin, etc. Specific examples of the phenol resin include triphenylmethane phenol resin, phenol aralkyl phenol resin, neophenol resin phenol resin, copolymerized phenol aralkyl phenol resin, and naphthol aralkyl. Type phenol resin, extended phenylaralkyl type phenol resin, etc. Each of these may be used alone, or two or more of them may be used in combination.

＜半導體元件的製造方法＞ 圖3（a）～圖3（d）是對半導體元件的製造方法進行說明的概略剖面圖，圖3（a）～圖3（d）對應於各步驟。一實施形態中，所述製造方法較佳為至少包含以下的步驟（a）～步驟（c），進而包含步驟（d）。<Method for Manufacturing Semiconductor Element> FIGS. 3 (a) to 3 (d) are schematic cross-sectional views illustrating a method for manufacturing a semiconductor element, and FIGS. 3 (a) to 3 (d) correspond to each step. In one embodiment, the manufacturing method preferably includes at least the following steps (a) to (c), and further includes step (d).

步驟（a）：如圖3（a）所示，藉由線3將基板1與配置於基板1上的半導體器件2電性連接。所謂「電性連接」，是指通常於基板1及半導體器件2上分別設置有電極（未圖示），並藉由線將各者的電極連接。利用線的連接可使用線接合裝置來實施。一實施形態中，自基板的表面至線的頂點3a為止的高度（圖中，參照符號h）可為0.5 mm～1.5 mm。例如，所述高度較佳為1 mm左右。另外，於金線的情況下，線徑可為10 μm～30 μm的範圍。於面向功率半導體的用途而使用鋁線的情況下，鋁線的線徑可為80 μm～600 μm的範圍，有與金線的情況相比高度h亦變高的傾向。Step (a): As shown in FIG. 3 (a), the substrate 1 is electrically connected to the semiconductor device 2 disposed on the substrate 1 by a line 3. The “electrical connection” means that electrodes (not shown) are usually provided on the substrate 1 and the semiconductor device 2 respectively, and the electrodes are connected by wires. The connection using a wire can be performed using a wire bonding device. In one embodiment, the height from the surface of the substrate to the apex 3a of the line (reference symbol h in the figure) may be 0.5 mm to 1.5 mm. For example, the height is preferably about 1 mm. In the case of a gold wire, the wire diameter may be in a range of 10 μm to 30 μm. When an aluminum wire is used for power semiconductor applications, the diameter of the aluminum wire may be in a range of 80 μm to 600 μm, and the height h tends to be higher than that of a gold wire.

步驟（b）：如圖3（b）所示，對線的頂點3a的下部空間供給液狀密封材。液狀密封材的供給方法並無特別限定，可應用分配器方式、注模方式、印刷方式等。一實施形態中，較佳為應用分配器方式。其中，較佳為使用噴射分配器裝置自線的側部注入液狀密封材的方法。藉由使用噴射分配器裝置對線下部的空間注入液狀密封材，而容易將所述空間無間隙地填充。藉由使供給至所述空間的液狀密封材硬化，可形成第1密封層4a。液狀密封材的硬化可於步驟（c）中後述的絕緣性樹脂塗佈材的供給前實施，或者亦可於絕緣性樹脂塗佈材的供給後實施。例如，於液狀密封材為熱硬化性的情況下，較佳為於液狀密封材注入後，繼續使液狀密封材加熱硬化。加熱硬化時的溫度可根據所使用的液狀密封材的種類而適宜調整，但代表性地較佳為100℃～200℃的範圍。Step (b): As shown in FIG. 3 (b), a liquid sealing material is supplied to the lower space of the vertex 3a of the line. The supply method of the liquid sealing material is not particularly limited, and a dispenser method, an injection molding method, and a printing method can be applied. In one embodiment, a dispenser method is preferably used. Among them, a method of injecting a liquid sealing material from a side portion of a wire using a spray dispenser device is preferable. By using a spray dispenser device to inject a liquid sealing material into the space below the line, it is easy to fill the space without gaps. By hardening the liquid sealing material supplied to the space, the first sealing layer 4a can be formed. The hardening of the liquid sealing material may be performed before the supply of the insulating resin coating material described in step (c), or may be performed after the supply of the insulating resin coating material. For example, when the liquid sealing material is thermosetting, it is preferable to continue to heat-harden the liquid sealing material after the liquid sealing material is injected. Although the temperature at the time of heat hardening can be suitably adjusted according to the kind of liquid sealing material used, typically, it is preferable that it is the range of 100 degreeC-200 degreeC.

步驟（c）：如圖3（c）所示，經由線3而對第1密封層4a的上部供給絕緣性樹脂塗佈材。步驟（b）中不實施液狀密封材的硬化的情況下，朝供給至所述空間中的液狀密封材的上方供給絕緣性樹脂塗佈材。絕緣性樹脂塗佈材的供給方法並無特別限定，可應用分配器方式、注模方式等。一實施形態中，較佳為應用分配器方式。絕緣性樹脂塗佈材較佳為被供給於包含液狀密封材的硬化物的第1密封層的上部。繼所述步驟（b）之後實施步驟（c），藉此，不產生流掛等不良現象而於線上部將絕緣性樹脂塗佈材維持原樣，並藉由乾燥而可容易地形成第2密封層。 一實施形態中，就確保絕緣性的觀點而言，第2密封層的膜厚較佳為5 μm以上，更佳為8 μm以上，進而佳為10 μm以上。另一方面，就薄型化的觀點而言，所述膜厚較佳為100 μm以下，更佳為50 μm以下，進而佳為30 μm以下。一實施形態中，所述膜厚較佳為10 μm～30 μm的範圍。因此，較佳為以乾燥後的膜厚成為所述範圍內的方式調整絕緣性樹脂塗佈材的供給量。Step (c): As shown in FIG. 3 (c), an insulating resin coating material is supplied to the upper portion of the first sealing layer 4a via the wire 3. When the liquid sealing material is not cured in step (b), an insulating resin coating material is supplied above the liquid sealing material supplied into the space. The supply method of the insulating resin coating material is not particularly limited, and a dispenser method, an injection molding method, and the like can be applied. In one embodiment, a dispenser method is preferably used. The insulating resin coating material is preferably supplied to an upper portion of the first sealing layer including a cured product of the liquid sealing material. The step (c) is performed subsequent to the step (b), whereby the insulating resin coating material is maintained on the upper portion of the wire without causing undesirable phenomena such as sagging, and the second seal can be easily formed by drying. Floor. In one embodiment, the thickness of the second sealing layer is preferably 5 μm or more, more preferably 8 μm or more, and even more preferably 10 μm or more, from the viewpoint of ensuring insulation properties. On the other hand, from the viewpoint of thinning, the film thickness is preferably 100 μm or less, more preferably 50 μm or less, and even more preferably 30 μm or less. In one embodiment, the film thickness is preferably in a range of 10 μm to 30 μm. Therefore, it is preferable to adjust the supply amount of the insulating resin coating material so that the film thickness after drying falls within the range.

步驟（d）：如圖3（d）所示，以至少覆蓋第2密封層4b的方式形成樹脂密封構件。樹脂密封構件較佳為以包含第2密封層4b在內將半導體器件及基板的整個表面覆蓋的方式形成。根據本實施形態的製造方法，於樹脂密封構件形成之前，將線密封，因此不會產生線流動等不良現象。樹脂密封構件的形成方法並無特別限制，可應用本技術領域中眾所周知的技術。 一實施形態中，樹脂密封構件的形成可藉由在具有規定形狀的模具內，使用之前所說明的包含環氧樹脂與酚樹脂的硬化性組成物進行轉注成形（transfer molding）而實施。另外，樹脂密封構件的厚度雖無特別限定，但由於藉由第2密封層確保了絕緣性，因此亦可設計得薄。一實施形態中，樹脂密封構件形成後所獲得的半導體元件的膜厚較佳為可設為1.5 mm以下，更佳為設為1.1 mm以下。Step (d): As shown in FIG. 3 (d), a resin sealing member is formed so as to cover at least the second sealing layer 4b. The resin sealing member is preferably formed so as to cover the entire surface of the semiconductor device and the substrate including the second sealing layer 4b. According to the manufacturing method of this embodiment, since the wires are sealed before the resin sealing member is formed, defects such as wire flow do not occur. The method for forming the resin sealing member is not particularly limited, and techniques well known in the art can be applied. In one embodiment, the formation of the resin sealing member can be performed by transfer molding using a hardening composition containing an epoxy resin and a phenol resin described above in a mold having a predetermined shape. In addition, although the thickness of the resin sealing member is not particularly limited, it can be designed to be thin because insulation is ensured by the second sealing layer. In one embodiment, the film thickness of the semiconductor element obtained after the resin sealing member is formed is preferably 1.5 mm or less, and more preferably 1.1 mm or less.

一實施形態中，半導體元件的製造方法包括：藉由線將基板與配置於基板上的半導體器件電性連接的步驟；藉由對所述線的頂點的下部空間供給液狀密封材、繼而使液狀密封材硬化而形成第1密封層的步驟；以及藉由經由所述線對所述第1密封層的上部供給絕緣性樹脂塗佈材、繼而使其乾燥而形成第2密封層的步驟。於另一實施形態中，半導體元件的製造方法於所述實施形態的製造方法中，於形成第2密封層的步驟之後，進而包括以至少覆蓋第2密封層的方式形成樹脂密封構件的步驟。 [實施例]In one embodiment, a method for manufacturing a semiconductor element includes the steps of electrically connecting a substrate to a semiconductor device disposed on the substrate by a wire; and supplying a liquid sealing material to a lower space of a vertex of the wire, and then A step of forming a first sealing layer by curing the liquid sealing material; and a step of forming a second sealing layer by supplying an insulating resin coating material to the upper portion of the first sealing layer via the wire and drying the same . In another embodiment, the method for manufacturing a semiconductor element includes the step of forming a second sealing layer, and further including the step of forming a resin sealing member so as to cover at least the second sealing layer. [Example]

以下，按照實施例來說明本發明的實施形態，但本發明並不限定於以下實施例，關於施加有各種變形的實施形態，當然亦包括在內。Hereinafter, embodiments of the present invention will be described in accordance with examples. However, the present invention is not limited to the following examples, and the embodiments to which various modifications are applied are of course also included.

1.液狀密封材的製備 （製備例1） 調配以下所示的材料，並利用三根輥及真空擂潰機進行混煉分散，從而製備液狀密封材。 環氧樹脂1：對(2,3-環氧丙氧基)-N,N-雙(2,3-環氧丙基)苯胺（艾迪科（ADEKA）股份有限公司製造的商品名「EP-3950S」、總氯量為1500 ppm以下） 60份 環氧樹脂2：雙酚F型環氧樹脂（新日鐵住金化學股份有限公司製造的商品名「YDF-8170C」） 20份 環氧樹脂3：1,6-己二醇二縮水甘油醚（阪本藥品工業股份有限公司的商品名「SR-16HL」） 20份 硬化劑：二乙基甲苯二胺（三菱化學股份有限公司製造的商品名「jER固（cure）W」） 42份 離子捕捉劑：鉍系離子捕捉劑（東亞合成股份有限公司製造的商品名「IXE-500」） 3份 溶劑：丁基卡必醇乙酸酯 57份 無機填充材1：利用矽烷偶合劑進行了表面處理的球狀熔融二氧化矽（亞都瑪科技（Admatechs）股份有限公司製造的商品名「SE5050-SEJ」、體積平均粒徑1.5 μm） 707份 無機填充材2：利用矽烷偶合劑進行了表面處理的球狀熔融二氧化矽（亞都瑪科技（Admatechs）股份有限公司製造的商品名「SE2050-SEJ」、體積平均粒徑0.5 μm） 235份1. Preparation of Liquid Sealing Material (Preparation Example 1) The following materials were prepared and kneaded and dispersed using three rolls and a vacuum crusher to prepare a liquid sealing material. Epoxy resin 1: p- (2,3-glycidoxy) -N, N-bis (2,3-glycidyl) aniline (ADEKA Corporation) trade name "EP -3950S "with a total chlorine content of 1500 ppm or less) 60 parts of epoxy resin 2: Bisphenol F-type epoxy resin (trade name" YDF-8170C "manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.) 20 parts of epoxy resin 3: 1,6-hexanediol diglycidyl ether (trade name "SR-16HL" of Sakamoto Pharmaceutical Co., Ltd.) 20 parts hardener: diethyltoluenediamine (trade name manufactured by Mitsubishi Chemical Corporation) "JER solid (cure) W") 42 parts ion trapping agent: bismuth-based ion trapping agent (trade name "IXE-500" manufactured by Toa Synthesis Co., Ltd.) 3 parts solvent: butylcarbitol acetate 57 parts Inorganic filler 1: Spherical fused silica with surface treatment with a silane coupling agent (trade name "SE5050-SEJ" manufactured by Admatechs Co., Ltd., volume average particle diameter 1.5 μm) 707 parts inorganic Filler 2: Spherical fused silica (surface-treated with a silane coupling agent) 235 parts manufactured by Admatechs Co., Ltd. under the trade name "SE2050-SEJ" and volume average particle diameter of 0.5 μm)

對於以所述方式製備的液狀密封材，分別測定25℃、剪切速度10-1 下的黏度、與75℃、剪切速度5 s-1 下的黏度。另外，測定75℃、剪切速度50 s-1 下的黏度，求出75℃下的觸變係數。將該些結果示於以下。 25℃黏度：20（Pa·s）（剪切速度10 s-1 ） 75℃黏度：2.0（Pa·s）（剪切速度5 s-1 ） 75℃下的觸變係數：1.7（剪切速度5 s-1 /50 s-1 的值） 再者，25℃下的黏度測定是使用E型黏度計（東京計器股份有限公司製造的維斯柯尼（VISCONIC） EHD型）而實施。另外，75℃下的黏度測定是使用流變儀（TA儀器（TA Instruments）公司的商品名「AR2000」）而實施。For the liquid sealing material prepared in the manner described above, the viscosity at 25 ° C. and a shear rate of 10 -1 and the viscosity at 75 ° C. and a shear rate of 5 s -1 were measured. The viscosity at 75 ° C and a shear rate of 50 s -1 were measured, and the thixotropic coefficient at 75 ° C was determined. These results are shown below. 25 ° C viscosity: 20 (Pa · s) (shear speed 10 s -1 ) 75 ° C viscosity: 2.0 (Pa · s) (shear speed 5 s -1 ) thixotropic coefficient at 75 ° C: 1.7 (shear Speed 5 s -1 / 50 s -1 ) The viscosity measurement at 25 ° C was performed using an E-type viscometer (VISCONIC EHD type manufactured by Tokyo Keiki Co., Ltd.). The viscosity measurement at 75 ° C was performed using a rheometer (TA Instruments, Inc.'s trade name "AR2000").

另外，對所製備的液狀密封材的氯離子量（ppm）進行測定。關於測定，藉由離子層析法於121℃、20小時的條件下進行處理，並使用碳酸鈉溶液作為溶離液來進行測定。測定的結果為，液狀密封材中的氯離子量為10 ppm。The amount of chloride ions (ppm) of the prepared liquid sealing material was measured. The measurement was performed by ion chromatography at 121 ° C. for 20 hours, and the measurement was performed using a sodium carbonate solution as an eluent. As a result of measurement, the amount of chloride ions in the liquid sealing material was 10 ppm.

2.絕緣性樹脂塗佈材的製備 （製備例2） ＜絕緣性樹脂塗佈材（P-1）的製備＞ （1）耐熱性樹脂（B）的合成例 於安裝有溫度計、攪拌機、氮氣導入管、帶油水分離機的冷卻管的5升的四口燒瓶中，於氮氣流下，放入650.90 g（1.59莫耳）的2,2-雙[4-(4-胺基苯氧基)苯基]丙烷（2,2-bis[4-(4-aminophenoxy)phenyl]propane，以下設為BAPP）、及43.80 g（0.18莫耳）的1,3-雙(3-胺基丙基)四甲基二矽氧烷（以下設為BY16-871（東麗道康寧（Toray Dow Corning）股份有限公司製造）），進而加入3609.86 g的N-甲基-2-吡咯啶酮（N-methyl-2-pyrrolidone，以下設為NMP）並進行溶解。繼而，一面將溶液冷卻為不超過20℃，一面加入384.36 g（1.83莫耳）的偏苯三酸酐醯氯（trimellitic anhydride acid chloride，以下設為TAC）。 於室溫下攪拌1小時後，一面冷卻為不超過20℃，一面加入215.90 g（2.14莫耳）的三乙胺（triethylamine，以下設為TEA）後，於室溫下使其反應1小時，從而製造聚醯胺酸清漆。對於所獲得的聚醯胺酸清漆，進而於180℃下進行6小時脫水反應，從而製造聚醯胺醯亞胺樹脂的清漆。對將所述聚醯胺醯亞胺樹脂的清漆注入於水中所得的沈澱物進行分離、粉碎及乾燥，而獲得聚醯胺醯亞胺樹脂粉末（PAI-1）。所獲得的聚醯胺醯亞胺樹脂（PAI-1）的Mw為77000。2. Preparation of insulating resin coating material (Preparation Example 2) <Preparation of insulating resin coating material (P-1)> (1) Synthesis example of heat-resistant resin (B) A thermometer, a stirrer, and nitrogen were installed. Into a 5-liter four-necked flask with an introduction tube and a cooling tube with an oil-water separator, put 650.90 g (1.59 mol) of 2,2-bis [4- (4-aminophenoxy) under a stream of nitrogen. Phenyl] propane (2,2-bis [4- (4-aminophenoxy) phenyl] propane (hereinafter referred to as BAPP)) and 43.80 g (0.18 mole) of 1,3-bis (3-aminopropyl) Tetramethyldisilaxane (hereinafter referred to as BY16-871 (manufactured by Toray Dow Corning Co., Ltd.)), and 3609.86 g of N-methyl-2-pyrrolidone (N-methyl- 2-pyrrolidone, hereinafter referred to as NMP) and dissolved. Then, while cooling the solution to not more than 20 ° C, 384.36 g (1.83 mol) of trimellitic anhydride acid chloride (hereinafter referred to as TAC) was added. After stirring at room temperature for 1 hour, while cooling to not more than 20 ° C, 215.90 g (2.14 mol) of triethylamine (hereinafter referred to as TEA) was added, and then reacted at room temperature for 1 hour. Thereby, polyamic acid varnish is manufactured. The obtained polyamic acid varnish was further subjected to a dehydration reaction at 180 ° C. for 6 hours to produce a polyaminofluorene imine resin varnish. The precipitate obtained by injecting the varnish of the polyfluorene imine resin into water is separated, pulverized, and dried to obtain a polyfluorene imine resin powder (PAI-1). Mw of the obtained polyamidofluorine imine resin (PAI-1) was 77,000.

（2）耐熱性樹脂（C）的合成例 於安裝有溫度計、攪拌機、氮氣導入管、帶油水分離機的冷卻管的1升的四口燒瓶中，於氮氣流下，放入69.72 g（170.1毫莫耳）的BAPP、及4.69 g（18.9毫莫耳）的BY16-871，進而加入693.52 g的NMP並進行溶解。繼而，一面將溶液冷卻為不超過20℃，一面加入25.05 g（119.0毫莫耳）的TAC、及25.47 g（79.1毫莫耳）的3,4,3',4'-二苯甲酮四羧酸二酐（3,4,3',4'-benzophenone tetracarboxylic acid dianhydride，以下設為BTDA）。 於室溫下攪拌1小時後，一面冷卻為不超過20℃，一面加入14.42 g（142.8毫莫耳）的TEA後，於室溫下使其反應1小時，從而製造聚醯胺酸清漆。對於所獲得的聚醯胺酸清漆，進而於180℃下進行6小時脫水反應，從而製造聚醯亞胺樹脂的清漆。對將所述聚醯亞胺樹脂的清漆注入於水中所得的沈澱物進行分離、粉碎及乾燥，而獲得聚醯亞胺樹脂粉末（PAIF-1）。所獲得的聚醯亞胺樹脂（PAIF-1）的Mw為42000。(2) Synthesis example of heat-resistant resin (C) In a 1-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen introduction tube, and a cooling tube with an oil-water separator, 69.72 g (170.1 mmol) was placed under a nitrogen stream. Mol), BAPP, and 4.69 g (18.9 mmol) of BY16-871, and 693.52 g of NMP was added and dissolved. Then, while cooling the solution to not more than 20 ° C, add 25.05 g (119.0 mmol) of TAC and 25.47 g (79.1 mmol) of 3,4,3 ', 4'-benzophenone tetra Carboxylic dianhydride (3,4,3 ', 4'-benzophenone tetracarboxylic acid dianhydride, hereinafter referred to as BTDA). After stirring at room temperature for 1 hour, while cooling to not more than 20 ° C, 14.42 g (142.8 millimoles) of TEA was added, and then reacted at room temperature for 1 hour to produce a polyamic acid varnish. The obtained polyamic acid varnish was further subjected to a dehydration reaction at 180 ° C. for 6 hours to produce a polyimide resin varnish. The precipitate obtained by injecting the polyimide resin varnish into water is separated, pulverized, and dried to obtain a polyimide resin powder (PAIF-1). Mw of the obtained polyfluorene imine resin (PAIF-1) was 42,000.

（3）絕緣性樹脂塗佈材的製備 於安裝有溫度計、攪拌機、氮氣導入管及冷卻管的0.5升的四口燒瓶中，於氮氣流下，加入92.4 g的作為第一極性溶媒（A1）的γ-丁內酯（γ-butyrolactone，以下設為γ-BL）、39.6 g的作為第二極性溶媒（A2）的三乙二醇二甲醚（triethylene glycol dimethyl ether，以下設為DMTG）、30.8 g的作為耐熱性樹脂（B）的之前所合成的聚醯胺醯亞胺樹脂粉末（PAI-1）、及13.2 g的作為耐熱性樹脂（C）的之前所合成的聚醯亞胺樹脂粉末（PAIF-1），一面攪拌一面升溫至180℃為止。於180℃下攪拌2小時後，使加熱停止，一面攪拌一面放置冷卻，於60℃下加入16.8 g的γ-BL及7.2 g 的DMTG，攪拌1小時，冷卻後，獲得黃色組成物。填充於過濾器KST-47（愛多邦得科（Advantec）股份有限公司製造）中，並將矽酮橡膠製活塞插入，以3.0 kg/cm2 的壓力進行加壓過濾，從而獲得絕緣性樹脂塗佈材（P-1）。(3) Preparation of insulating resin coating material In a 0.5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen introduction tube, and a cooling tube, 92.4 g of a first polar solvent (A1) was added under a nitrogen flow. γ-butyrolactone (hereinafter referred to as γ-BL), 39.6 g of triethylene glycol dimethyl ether (hereinafter referred to as DMTG) as the second polar solvent (A2), 30.8 g of previously synthesized polyfluorene imine resin powder (PAI-1) as the heat-resistant resin (B), and 13.2 g of previously synthesized polyfluorene imide resin powder as the heat-resistant resin (C) (PAIF-1), heat up to 180 ° C while stirring. After stirring at 180 ° C for 2 hours, the heating was stopped, and the mixture was allowed to cool while being stirred. 16.8 g of γ-BL and 7.2 g of DMTG were added at 60 ° C, and the mixture was stirred for 1 hour. After cooling, a yellow composition was obtained. Fill the filter KST-47 (manufactured by Advantec Co., Ltd.), insert a piston made of silicone rubber, and perform pressure filtration at a pressure of 3.0 kg / cm 2 to obtain an insulating resin Coating material (P-1).

（製備例3） ＜包含無機填料的絕緣性樹脂塗佈材（P-2）的製備＞ 與製備例2（1）同樣地，獲得PAI-1後，添加5 wt%的日本艾羅西爾（AEROSIL）股份有限公司製造的艾羅西爾（AEROSIL）200，從而製備比較例用的絕緣性樹脂塗佈材。 具體而言，於安裝有溫度計、攪拌機、氮氣導入管及冷卻管的0.5升的四口燒瓶中，於氮氣流下，加入92.4g的作為第一極性溶媒（A1）的γ-BL，39.6 g的作為第二極性溶媒（A2）的三乙二醇二甲醚（以下設為DMTG）、30.8 g的作為耐熱性樹脂（B）的之前所合成的聚醯胺醯亞胺樹脂粉末（PAI-1）、及9.8 g的艾羅西爾（AEROSIL）200，一面攪拌一面升溫至180℃為止。於180℃下攪拌2小時後，使加熱停止，一面攪拌一面放置冷卻，於60℃下加入16.8 g的γ-BL及7.2 g的DMTG，攪拌1小時，冷卻後，獲得黃色組成物。填充於過濾器KST-47（愛多邦得科（Advantec）股份有限公司製造）中，並將矽酮橡膠製活塞插入，以3.0 kg/cm2 的壓力進行加壓過濾，從而獲得比較例用的絕緣性樹脂塗佈材（P-2）。(Preparation Example 3) <Preparation of Insulating Resin Coating Material (P-2) Containing Inorganic Filler> In the same manner as in Preparation Example 2 (1), after obtaining PAI-1, 5 wt% of Japan Eloxir was added (AEROSIL) Co., Ltd. manufactured AEROSIL 200 to prepare an insulating resin coating material for a comparative example. Specifically, in a 0.5-liter four-necked flask equipped with a thermometer, a stirrer, a nitrogen introduction tube, and a cooling tube, 92.4 g of γ-BL as a first polar solvent (A1), 39.6 g of Triethylene glycol dimethyl ether (hereinafter referred to as DMTG) as the second polar solvent (A2), and 30.8 g of the previously synthesized polyamidoamine imine resin powder (PAI-1) as the heat-resistant resin (B) ), And 9.8 g of AEROSIL 200, heat up to 180 ° C while stirring. After stirring at 180 ° C for 2 hours, the heating was stopped, and the mixture was left to cool while stirring. At 60 ° C, 16.8 g of γ-BL and 7.2 g of DMTG were added and stirred for 1 hour. After cooling, a yellow composition was obtained. The filter was filled in KST-47 (manufactured by Advantec Co., Ltd.), a piston made of silicone rubber was inserted, and pressure filtration was performed at a pressure of 3.0 kg / cm 2 to obtain a comparative example. Insulating resin coating material (P-2).

3.半導體元件的製造 （實施例1） 準備利用焊料將半導體器件安裝於玻璃環氧基板上，並利用金線將安裝於基板上的半導體器件與基板電性連接而成的結構體。對半導體器件的四邊形成4×20根（合計80根）金線接合。自基板至線頂點的高度為0.9 mm。 繼而，使用噴射分配器裝置（諾信先進技術（Nordson Advanced Technology）股份有限公司製造的裝置名「S2-910」）將製備例1中所獲得的液狀密封材供給於所述結構體的線的頂點的下部空間。繼而，於175℃下對所供給的液狀密封材加熱2小時，藉此使其硬化，從而形成第1密封層（線密封層）。 使用分配器裝置（三英（SAN-EI TECH）股份有限公司製造的裝置名「SDP500」）將製備例2中所獲得的絕緣性樹脂塗佈材經由線供給於第1密封層的上方。繼而，於以100℃進行30分鐘、進而以200℃進行1小時的溫度條件下使所述塗佈材的塗膜乾燥，藉此形成膜厚為12 μm的第2密封層（絕緣保護層）。3. Manufacturing of semiconductor elements (Example 1) A structure is prepared in which a semiconductor device is mounted on a glass epoxy substrate using solder, and the semiconductor device mounted on the substrate is electrically connected to the substrate using gold wires. 4 × 20 (total 80) gold wire bonds were formed on the four sides of the semiconductor device. The height from the substrate to the vertex of the line is 0.9 mm. Then, the line of the structural body was supplied with the liquid sealing material obtained in Preparation Example 1 using a spray distributor device (device name "S2-910" manufactured by Nordson Advanced Technology Co., Ltd.). The lower space of the vertices. Then, the supplied liquid sealing material was heated at 175 ° C. for 2 hours to harden it, thereby forming a first sealing layer (line sealing layer). Using a dispenser device (device name "SDP500" manufactured by SAN-EI TECH Co., Ltd.), the insulating resin coating material obtained in Preparation Example 2 was supplied over the first sealing layer via a wire. Then, the coating film of the coating material was dried at a temperature of 100 ° C. for 30 minutes, and then 200 ° C. for 1 hour, thereby forming a second sealing layer (insulating protective layer) having a thickness of 12 μm. .

（比較例1） 與實施例1同樣地，準備藉由線將安裝於基板上的半導體器件電性連接而成的結構體。繼而，使用分配器裝置（三英（SAN-EI TECH）股份有限公司製造的裝置名「SDP500」）將製備例2中所獲得的絕緣性樹脂塗佈材僅供給於結構體的線上部。對於線下部而言，線成為障礙，未能順利地填充絕緣性樹脂塗佈材。繼而，於以100℃進行30分鐘、進而以200℃進行1小時的溫度條件下使塗膜乾燥，藉此形成密封層（絕緣保護層）。再者，對絕緣性樹脂塗佈材的供給量進行調整，以使得位於線上部的密封層的乾燥膜厚與實施例1相同而成為12 μm。Comparative Example 1 In the same manner as in Example 1, a structure in which a semiconductor device mounted on a substrate was electrically connected by a wire was prepared. Then, using a dispenser device (device name "SDP500" manufactured by SAN-EI TECH Co., Ltd.), the insulating resin coating material obtained in Preparation Example 2 was supplied only to the upper part of the structure. In the lower part of the wire, the wire becomes an obstacle, and the insulating resin coating material cannot be filled smoothly. Then, the coating film was dried at a temperature of 100 ° C. for 30 minutes and 200 ° C. for 1 hour to form a sealing layer (insulating protective layer). In addition, the supply amount of the insulating resin coating material was adjusted so that the dry film thickness of the sealing layer located at the upper part of the line was the same as that of Example 1 to be 12 μm.

（比較例2） 與實施例1同樣地，準備藉由線將安裝於基板上的半導體器件電性連接而成的結構體。繼而，使用噴射分配器裝置（諾信先進技術（Nordson Advanced Technology）股份有限公司製造的裝置名「S2-910」）將製備例1中所獲得的液狀密封材供給於所述結構體的線下部及上部。繼而，於以175℃進行2小時的溫度條件下使塗膜硬化，藉此形成密封層（線密封層）。再者，對液狀密封材的供給量進行調整，以使得位於線上部的密封層的膜厚與實施例1相同而成為12 μm。Comparative Example 2 In the same manner as in Example 1, a structure in which a semiconductor device mounted on a substrate was electrically connected by a wire was prepared. Then, the line of the structural body was supplied with the liquid sealing material obtained in Preparation Example 1 using a spray distributor device (device name "S2-910" manufactured by Nordson Advanced Technology Co., Ltd.). Lower and upper. Then, the coating film was hardened at a temperature of 175 ° C. for 2 hours, thereby forming a sealing layer (line sealing layer). In addition, the supply amount of the liquid sealing material was adjusted so that the film thickness of the sealing layer located at the upper part of the line was the same as that of Example 1 to be 12 μm.

（比較例3） 與實施例1同樣地，準備藉由線將安裝於基板上的半導體器件電性連接而成的結構體。繼而，與實施例1同樣地，於所述結構體的線下部形成第1密封層後，將製備例3中所獲得的包含無機填料的絕緣性樹脂塗佈材經由線供給於所述第1密封層的上方。再者，對包含無機填料的絕緣性樹脂塗佈材的供給量進行調整，以使得位於線上部的密封層的乾燥膜厚與實施例1相同而成為12 μm。(Comparative Example 3) As in Example 1, a structure in which a semiconductor device mounted on a substrate was electrically connected by a wire was prepared. Next, as in Example 1, after forming the first sealing layer on the lower part of the wire of the structure, the insulating resin coating material containing the inorganic filler obtained in Preparation Example 3 was supplied to the first via a wire. Above the seal. In addition, the supply amount of the insulating resin coating material containing an inorganic filler was adjusted so that the dry film thickness of the sealing layer located at the upper part of the line would be the same as in Example 1 to be 12 μm.

4.半導體元件的評價 ＜半導體元件的可靠性＞ 對於實施例1及比較例1～比較例3中所獲得的半導體元件，根據超音波顯微鏡測定來判斷針對線而言的密封層中的孔隙的有無，並評價元件的可靠性。 超音波顯微鏡測定藉由使用索諾斯堪（SONOSCAN）公司製造的裝置名「D9000」而實施。於藉由超音波顯微鏡測定未能確認到半導體元件中的孔隙的存在的情況下，判斷為可靠性良好。另一方面，於藉由超音波顯微鏡測定可確認到孔隙的存在的情況下，判斷為可靠性不良。將結果示於表1。4. Evaluation of Semiconductor Element <Reliability of Semiconductor Element> For the semiconductor elements obtained in Example 1 and Comparative Examples 1 to 3, the measurement of the pores in the sealing layer with respect to the wire was determined by ultrasonic microscope measurement. Existence and absence, and evaluation of component reliability. The ultrasonic microscope measurement was performed by using a device name "D9000" manufactured by SONOSCAN. When the existence of pores in the semiconductor element could not be confirmed by the ultrasonic microscope measurement, it was determined that the reliability was good. On the other hand, when the existence of pores can be confirmed by measurement with an ultrasonic microscope, it is determined that the reliability is poor. The results are shown in Table 1.

＜絕緣破壞電壓＞ 對於實施例1及比較例1～比較例3中所獲得的半導體元件，為了對形成於線上部的密封層的絕緣破壞電壓進行評價，而以如下方式製作測定用樣品。 作為與實施例1（比較例1）對應的測定用樣品1，利用輔料器將製備例2中所得的絕緣性樹脂塗佈材P-1塗佈於鋁基板上。繼而，於100℃下於烘箱中加熱30分鐘，進而於200℃下於烘箱中加熱1小時，藉此獲得膜厚10 μm的乾燥塗膜。 作為針對比較例2而言的測定樣品2，利用輔料器將製備例1中所得的液狀密封材塗佈於鋁基板上。繼而，於175℃、2小時的條件下使塗膜加熱硬化，藉此獲得膜厚10 μm的硬化膜。 作為針對比較例3而言的測定樣品3，利用輔料器將製備例3中所得的包含無機填料的絕緣性樹脂塗佈材P-2塗佈於鋁基板上。繼而，於100℃下於烘箱中加熱30分鐘，進而於200℃下於烘箱中加熱1小時，藉此獲得膜厚10 μm的乾燥塗膜。 將以所述方式製作的測定用樣品1～測定用樣品3分別利用一對電極夾持，並測定絕緣破壞電壓值。關於測定，以日本工業標準（Japanese Industrial Standards，JIS）C2110為參考，於油中，於將升壓速度設為0.5 kV/秒、將測定溫度設為室溫、將電極形狀設為f20 mm的球的條件下實施。將結果示於表1。<Insulation breakdown voltage> For the semiconductor elements obtained in Example 1 and Comparative Examples 1 to 3, in order to evaluate the insulation breakdown voltage of the sealing layer formed on the upper portion of the wire, a measurement sample was prepared as follows. As a measurement sample 1 corresponding to Example 1 (Comparative Example 1), the insulating resin coating material P-1 obtained in Preparation Example 2 was applied on an aluminum substrate using an auxiliary device. Then, it was heated in an oven at 100 ° C. for 30 minutes, and further heated in an oven at 200 ° C. for 1 hour, thereby obtaining a dry coating film having a film thickness of 10 μm. As the measurement sample 2 for Comparative Example 2, the liquid sealing material obtained in Preparation Example 1 was applied on an aluminum substrate using an auxiliary device. Then, the coating film was heated and hardened under the conditions of 175 ° C. and 2 hours to obtain a cured film having a film thickness of 10 μm. As a measurement sample 3 for Comparative Example 3, an insulating resin coating material P-2 containing an inorganic filler obtained in Preparation Example 3 was applied on an aluminum substrate using an auxiliary device. Then, it was heated in an oven at 100 ° C. for 30 minutes, and further heated in an oven at 200 ° C. for 1 hour, thereby obtaining a dry coating film having a film thickness of 10 μm. Each of the measurement sample 1 to measurement sample 3 produced as described above was sandwiched between a pair of electrodes, and the dielectric breakdown voltage value was measured. For the measurement, refer to Japanese Industrial Standards (JIS) C2110. In oil, set the boost speed to 0.5 kV / sec, set the measurement temperature to room temperature, and set the electrode shape to f20 mm. Implemented under ball conditions. The results are shown in Table 1.

＜ESD耐性＞ 對於實施例1及比較例1～比較例3中所得的半導體元件，實際上代替測定ESD耐性而根據另行測定的乾燥塗膜（硬化膜）的絕緣破壞電壓的值來評價ESD耐性。例如，之前所製作的測定樣品1的絕緣破壞電壓為230 kV/mm，其與230 V/μm為相同含義。因此，只要藉由成膜所得的密封層（膜）的膜厚為10 μm，則密封層（膜）具有2300 V（2.3 kV）的絕緣性。通常，只要密封層（膜）可對超過2 kV的電壓保持絕緣性，則於半導體元件中能夠獲得充分的ESD耐性。 一般而言，藉由增大膜厚而提高絕緣性，藉此可提高ESD耐性。例如，於以獲得100 μm以上的膜厚的方式塗佈材料的情況下，容易保證絕緣性。但難以以原本獲得100 μm的膜厚的方式均勻地塗佈絕緣性塗佈材。另外，就與要求薄型的半導體元件的市場趨勢逆行的方面而言，亦欠佳。因此，如以下般，以2 kV為基準值，根據由膜厚10 μm的測定樣品1～測定樣品3的絕緣破壞電壓的測定值所算出的絕緣性來評價ESD耐性。將結果示於表1。（ESD的評價基準） 良好：絕緣性為2 kV以上。 不良：絕緣性未滿2 kV。<ESD resistance> The semiconductor devices obtained in Example 1 and Comparative Examples 1 to 3 were actually evaluated for ESD resistance based on the value of the dielectric breakdown voltage of the dry coating film (cured film), which was measured separately, instead of measuring the ESD resistance. . For example, the dielectric breakdown voltage of the measurement sample 1 prepared previously is 230 kV / mm, which has the same meaning as 230 V / μm. Therefore, as long as the thickness of the sealing layer (film) obtained by film formation is 10 μm, the sealing layer (film) has an insulation property of 2300 V (2.3 kV). Generally, as long as the sealing layer (film) can maintain insulation against a voltage exceeding 2 kV, sufficient ESD resistance can be obtained in a semiconductor device. Generally, ESD resistance can be improved by increasing the insulation thickness by increasing the film thickness. For example, when a material is applied so as to obtain a film thickness of 100 μm or more, it is easy to ensure insulation. However, it is difficult to uniformly coat the insulating coating material so that a film thickness of 100 μm is originally obtained. In addition, it is also unfavorable in terms of reversing the market trend for thin semiconductor devices. Therefore, ESD resistance was evaluated based on the insulation calculated from the measurement values of the insulation breakdown voltage of the measurement samples 1 to 3 with a film thickness of 10 μm using 2 kV as a reference value as follows. The results are shown in Table 1. (Evaluation criteria for ESD) Good: Insulation is 2 kV or more. Defective: Insulation is less than 2 kV.

[表1] （註解） 實施例1及比較例1的絕緣破壞電壓及ESD耐性與針對測定樣品1而言的測定值及評價結果對應。比較例2及比較例3的絕緣破壞電壓及ESD耐性的評價與針對測定樣品2及測定樣品3而言的測定值及評價結果對應。 ESD耐性中的絕緣性為根據膜厚10 μm的測定樣品1～測定樣品3的絕緣破壞電壓的測定值而算出的值。[Table 1] (Remarks) The dielectric breakdown voltage and ESD resistance of Example 1 and Comparative Example 1 correspond to the measurement values and evaluation results for measurement sample 1. The evaluations of the dielectric breakdown voltage and the ESD resistance of Comparative Example 2 and Comparative Example 3 correspond to the measurement values and evaluation results for measurement sample 2 and measurement sample 3. Insulation resistance in ESD resistance is a value calculated from the measured values of the dielectric breakdown voltage of measurement sample 1 to measurement sample 3 with a film thickness of 10 μm.

由實施例1與比較例1～比較例3的對比而明確到，根據本發明的實施形態（實施例1），孔隙的產生得到抑制，且獲得高的絕緣破壞電壓。因此，根據本發明，可提供一種絕緣性、ESD耐性優異、且可靠性優異的薄型的半導體元件。It is clear from the comparison between Example 1 and Comparative Examples 1 to 3 that according to the embodiment (Example 1) of the present invention, generation of pores is suppressed and a high dielectric breakdown voltage is obtained. Therefore, according to the present invention, it is possible to provide a thin semiconductor element having excellent insulation properties, ESD resistance, and excellent reliability.

1‧‧‧基板1‧‧‧ substrate

2‧‧‧半導體器件2‧‧‧ semiconductor devices

3‧‧‧線（接合線）3‧‧‧line (bonding line)

3a‧‧‧線頂點（頂點）3a‧‧‧ line vertex (vertex)

4a‧‧‧第1密封層4a‧‧‧The first sealing layer

4b‧‧‧第2密封層4b‧‧‧Second sealing layer

5‧‧‧樹脂密封構件5‧‧‧resin sealing member

h‧‧‧自基板起的線高度（高度）h‧‧‧Line height (height) from the substrate

圖1是一實施形態的半導體元件的側面剖面圖。 圖2是一實施形態的半導體元件的局部平面圖。 圖3（a）～圖3（d）是對一實施形態的半導體元件的製造方法進行說明的概略剖面圖，圖3（a）～圖3（d）對應於各步驟。FIG. 1 is a side sectional view of a semiconductor element according to an embodiment. FIG. 2 is a partial plan view of a semiconductor element according to an embodiment. 3 (a) to 3 (d) are schematic cross-sectional views illustrating a method of manufacturing a semiconductor device according to an embodiment, and Figs. 3 (a) to 3 (d) correspond to each step.

Claims (20)

一種半導體元件，包括：基板；配置於所述基板上的半導體器件；將所述基板與所述半導體器件電性連接的線；將所述線的頂點的下部空間密封的第1密封層；以及經由所述線設置於所述第1密封層的上部的第2密封層，且 所述第1密封層包含液狀密封材的硬化膜， 所述第2密封層包含絕緣性樹脂塗佈材的乾燥塗膜。A semiconductor element includes: a substrate; a semiconductor device disposed on the substrate; a line electrically connecting the substrate and the semiconductor device; a first sealing layer that seals a lower space of an apex of the line; A second sealing layer provided on an upper portion of the first sealing layer via the line, and the first sealing layer includes a cured film of a liquid sealing material, and the second sealing layer includes an insulating resin coating material. Dry the coating. 如申請專利範圍第1項所述的半導體元件，其進而包括以至少覆蓋所述第2密封層的方式設置的樹脂密封構件。The semiconductor element according to item 1 of the patent application scope further includes a resin sealing member provided so as to cover at least the second sealing layer. 如申請專利範圍第1項或第2項所述的半導體元件，其中，所述絕緣性樹脂塗佈材的乾燥塗膜的絕緣破壞電壓為150 kV/mm以上。The semiconductor device according to claim 1 or claim 2, wherein the dielectric breakdown voltage of the dried coating film of the insulating resin coating material is 150 kV / mm or more. 如申請專利範圍第1項至第3項中任一項所述的半導體元件，其中，所述絕緣性樹脂塗佈材包含平均粒徑0.1 μm～5.0 μm的樹脂填料。The semiconductor device according to any one of claims 1 to 3, wherein the insulating resin coating material includes a resin filler having an average particle diameter of 0.1 μm to 5.0 μm. 如申請專利範圍第1項至第4項中任一項所述的半導體元件，其中，所述絕緣性樹脂塗佈材的25℃下的黏度為30 Pa·s～500 Pa·s。The semiconductor device according to any one of claims 1 to 4, wherein the viscosity of the insulating resin coating material at 25 ° C is 30 Pa · s to 500 Pa · s. 如申請專利範圍第1項至第5項中任一項所述的半導體元件，其中，所述絕緣性樹脂塗佈材的25℃下的觸變係數為2.0～10.0。The semiconductor device according to any one of claims 1 to 5, in which the thixotropic coefficient at 25 ° C of the insulating resin coating material is 2.0 to 10.0. 如申請專利範圍第1項至第6項中任一項所述的半導體元件，其中，所述絕緣性樹脂塗佈材包含選自由聚醯胺、聚醯胺醯亞胺、及聚醯亞胺所組成的群組中的至少一種絕緣性樹脂。The semiconductor device according to any one of claims 1 to 6, wherein the insulating resin coating material is selected from the group consisting of polyimide, polyimide, and polyimide At least one insulating resin in the formed group. 如申請專利範圍第1項至第7項中任一項所述的半導體元件，其中，所述第2密封層的膜厚為100 μm以下。The semiconductor device according to any one of claims 1 to 7, wherein the film thickness of the second sealing layer is 100 μm or less. 如申請專利範圍第8項所述的半導體元件，其中，所述第2密封層的膜厚為50 μm以下。The semiconductor device according to item 8 of the scope of patent application, wherein the film thickness of the second sealing layer is 50 μm or less. 如申請專利範圍第7項至第9項中任一項所述的半導體元件，其中，所述絕緣性樹脂的Tg為150℃以上。The semiconductor device according to any one of claims 7 to 9, wherein the Tg of the insulating resin is 150 ° C or higher. 如申請專利範圍第1項至第10項中任一項所述的半導體元件，其中，所述液狀密封材包含熱硬化性樹脂成分與無機填充劑，且當將於75℃、剪切速度5 s-1 的條件下所測定的黏度（Pa·s）設為黏度A，並將於75℃、剪切速度50 s-1 的條件下所測定的黏度（Pa·s）設為黏度B時，以黏度A/黏度B的值獲得的75℃下的觸變係數為0.1～2.5。The semiconductor device according to any one of claims 1 to 10, wherein the liquid sealing material includes a thermosetting resin component and an inorganic filler, and the temperature is set at 75 ° C and a shear rate. The viscosity (Pa · s) measured under the condition of 5 s -1 is referred to as viscosity A, and the viscosity (Pa · s) measured under the conditions of 75 ° C and 50 s -1 is set as viscosity B In this case, the thixotropic coefficient at 75 ° C. obtained by the value of viscosity A / viscosity B is 0.1 to 2.5. 如申請專利範圍第1項至第11項中任一項所述的半導體元件，其中，所述液狀密封材中的氯離子量為100 ppm以下。The semiconductor device according to any one of claims 1 to 11, wherein the amount of chloride ions in the liquid sealing material is 100 ppm or less. 如申請專利範圍第11項或第12項中任一項所述的半導體元件，其中，所述液狀密封材中的所述無機填充劑的最大粒徑為75 μm以下。The semiconductor device according to any one of claim 11 or claim 12, wherein the maximum particle diameter of the inorganic filler in the liquid sealing material is 75 μm or less. 如申請專利範圍第1項至第13項中任一項所述的半導體元件，其中，所述液狀密封材的於75℃、剪切速度5 s-1 的條件下所測定的黏度為3.0 Pa·s以下。The semiconductor device according to any one of claims 1 to 13, in which the viscosity of the liquid sealing material measured at 75 ° C and a shear rate of 5 s -1 is 3.0. Pa · s or less. 如申請專利範圍第1項至第14項中任一項所述的半導體元件，其中，所述液狀密封材的於25℃、剪切速度10 s-1 的條件下所測定的黏度為30 Pa·s以下。The semiconductor device according to any one of claims 1 to 14, in which the viscosity of the liquid sealing material measured at 25 ° C and a shear rate of 10 s -1 is 30. Pa · s or less. 如申請專利範圍第11項至第15項中任一項所述的半導體元件，其中，以所述液狀密封材的總質量為基準，所述無機填充劑的含量為50質量%以上。The semiconductor device according to any one of claims 11 to 15 in the scope of application for a patent, wherein the content of the inorganic filler is 50% by mass or more based on the total mass of the liquid sealing material. 如申請專利範圍第11項至第16項中任一項所述的半導體元件，其中，所述液狀密封材中的所述熱硬化性樹脂成分包含芳香族環氧樹脂與脂肪族環氧樹脂。The semiconductor device according to any one of claims 11 to 16, wherein the thermosetting resin component in the liquid sealing material includes an aromatic epoxy resin and an aliphatic epoxy resin. . 如申請專利範圍第17項所述的半導體元件，其中，所述芳香族環氧樹脂包含選自由液狀的雙酚型環氧樹脂及液狀的縮水甘油胺型環氧樹脂所組成的群組中的至少一種，所述脂肪族環氧樹脂包含線狀脂肪族環氧樹脂。The semiconductor device according to item 17 of the scope of patent application, wherein the aromatic epoxy resin is selected from the group consisting of a liquid bisphenol epoxy resin and a liquid glycidylamine epoxy resin. At least one of these, the aliphatic epoxy resin comprises a linear aliphatic epoxy resin. 如申請專利範圍第1項至第18項中任一項所述的半導體元件，其被用於指紋認證感測器中。The semiconductor device according to any one of claims 1 to 18 of the scope of patent application, which is used in a fingerprint authentication sensor. 一種半導體元件的製造方法，其為製造如下的半導體元件的方法，所述半導體元件包括：基板；配置於所述基板上的半導體器件；將所述基板與所述半導體器件電性連接的線；將所述線的頂點的下部空間密封的第1密封層；以及經由所述線設置於所述第1密封層的上部的第2密封層，且所述半導體元件的製造方法包括： 藉由所述線將所述基板與配置於所述基板上的所述半導體器件電性連接的步驟； 對所述線的頂點的下部空間供給液狀密封材並形成第1密封層的步驟；以及 經由所述線對所述第1密封層的上部供給絕緣性樹脂塗佈材並形成第2密封層的步驟。A method for manufacturing a semiconductor element, which is a method for manufacturing a semiconductor element including: a substrate; a semiconductor device arranged on the substrate; a line for electrically connecting the substrate and the semiconductor device; A first sealing layer that seals a lower space of a vertex of the line; and a second sealing layer that is provided above the first sealing layer via the line, and the method for manufacturing the semiconductor element includes: The step of electrically connecting the substrate to the semiconductor device disposed on the substrate; a step of supplying a liquid sealing material to a lower space at an apex of the line to form a first sealing layer; and The wire is a step of supplying an insulating resin coating material to the upper portion of the first sealing layer and forming a second sealing layer.
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Family Cites Families (15)

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US5300459A (en) * 1989-12-28 1994-04-05 Sanken Electric Co., Ltd. Method for reducing thermal stress in an encapsulated integrated circuit package
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US20130288120A1 (en) * 2011-07-08 2013-10-31 Mitsui Chemicals Inc. Polyimide resin composition and laminate including polyimide resin composition
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US9466544B2 (en) * 2013-01-30 2016-10-11 Freescale Semiconductor, Inc. Semiconducitive catechol group encapsulant adhesion promoter for a packaged electronic device
US9373558B2 (en) * 2013-02-22 2016-06-21 Hitachi, Ltd. Resin-sealed electronic control device
US9659848B1 (en) * 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
JP6710065B2 (en) 2016-03-03 2020-06-17 大阪瓦斯株式会社 Pipe insertion tool
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