SE2050185A1 - Semiconductor device and method for producing same - Google Patents

Semiconductor device and method for producing same

Info

Publication number
SE2050185A1
SE2050185A1 SE2050185A SE2050185A SE2050185A1 SE 2050185 A1 SE2050185 A1 SE 2050185A1 SE 2050185 A SE2050185 A SE 2050185A SE 2050185 A SE2050185 A SE 2050185A SE 2050185 A1 SE2050185 A1 SE 2050185A1
Authority
SE
Sweden
Prior art keywords
resin
semiconductor device
wire
sealing layer
viscosity
Prior art date
Application number
SE2050185A
Other languages
Swedish (sv)
Other versions
SE543901C2 (en
Inventor
Daichi Takemori
Eiichi Satoh
Kazuhiko Yamada
Kohei Seki
Mitsuo Togawa
Mizuko Sato
Original Assignee
Hitachi Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Co Ltd filed Critical Hitachi Chemical Co Ltd
Publication of SE2050185A1 publication Critical patent/SE2050185A1/en
Publication of SE543901C2 publication Critical patent/SE543901C2/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
    • C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
    • C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J7/00—Chemical treatment or coating of shaped articles made of macromolecular substances
    • C08J7/04—Coating
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L79/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen with or without oxygen or carbon only, not provided for in groups C08L61/00 - C08L77/00
    • C08L79/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C08L79/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4801—Structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
    • H01L2224/49176—Wire connectors having the same loop shape and height
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909—Post-treatment of the connector or wire bonding area
    • H01L2224/8592—Applying permanent coating, e.g. protective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/293—Organic, e.g. plastic
    • H01L23/295—Organic, e.g. plastic containing a filler
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

A semiconductor device having a substrate, a semiconductor element disposed on the substrate, a wire that electrically connects the substrate and the semiconductor element, a first sealing layer that seals the space below the apex of the wire, and a second sealing layer that is provided on top of the first sealing layer with the bonding wire interposed therebetween, wherein the first sealing layer is formed from a cured film of a liquid sealing material, and the second sealing layer is formed from a dried coating film of an insulating resin coating material.

Description

DESCRIPTION SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME TECHNICAL FIELD[000 l ]Embodiments of the present invention relate to a semiconductor device and a method forproducing that semiconductor device, and more specifically, relate to a semiconductor device in whicha thinner structure is achieved by sealing the regions above and below the wires with different materials, and a method for producing that semiconductor device.
BACKGROUND ART[0002] In recent years, as typified by mobile phones, electrical equipment that uses semiconductordevices continue to become thinner. Further, from the viewpoint of security protection, in addition tosecurity management that relies on passwords, biometric authentication is garnering much attention.For example, in the case of mobile phones, models equipped with a fingerprint authentication sensor,which represents one example of biometric authentication, tend to be becoming more prevalent.Although these types of new electrical devices continue to be developed one after another, specificportions of semiconductor devices have been confirmed as being vulnerable to electrostatic discharge(ESD). 3. 3. 3. id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3" id="p-3"
[0003] Electrostatic discharge (hereafter abbreviated as ESD) is one cause of damage or malfunctionof semiconductor devices. Similarly, in the case of fmgerprint authentication Sensors, the effects ofESD cannot be ignored. Aecordingly, those portions of semiconductor devices that exhibit weakresistance to ESD require the formation of an insulating protective layer.
Further, as technology progresses, reductions in the thiekness of electrical equipment andsemiconductor devices are increasingly required, and therefore the thiekness of the insulating protective layer itself must also be reduced.
PRIOR ART DOCUMENTSPATENT DOCUMENT[0004]Patent Document l: JP 2013-166925 SUMMARY OF THE INVENTIONPROBLEMS TO BE SOLVED BY THE INVENTION . . . id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5" id="p-5"
[0005] In general, portions of semiconductor devices prone to ESD concentration are conductiveprotrusions in which electric charge can readily accumulate. For example, the upper portion of a wirethat electrically connects a substrate and a semiconductor element, and the area between tapers ofmetal wall portions on a circuit board tend to exhibit weak ESD resistance. When an insulatingprotective layer is formed on the upper portion of a wire to improve the ESD resistance, variousproblems arise due to the complex shape of the wire.
Firstly, it is preferable that the material used for forming the insulating protective layer on theupper portion of the wire (hereafter also referred to as the insulating protective material) does not flowbeneath the wire following application, but is rather retained on the top of the wire. In other words,the insulating protective material preferably has appropriate thixotropy.
Further, in order to meet the requirement for reduced thickness of the insulating protectivelayer, the insulating protective material preferably has excellent insulation properties. ln particular,from the viewpoint of obtaining satisfactory ESD resistance, the insulating protective material ispreferably a material which, following film formation, yields a dielectric breakdown voltage of at least150 kV/mm. 6. 6. 6. id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6" id="p-6"
[0006] ln response to these requirements, materials having, for example, a polyimide resin as a baseare already known as insulating protective materials, and the fluidity is controlled in accordance withthe usage environment. For example, in order to impart thixotropy, paste-like insulating protectivematerials in which an inorganic filler such as a fine silica filler or some other form of organic filler hasbeen dispersed in the base resin can be used. In those cases where a liquid insulating protectivematerial having no thixotropic properties is used to form an insulating protective layer, flow of theliquid after application means the film thickness on the upper portion of the wire, which requires themost electrostatic protection, tends to become thinner. In those cases where a liquid insulatingprotective material containing a polyimide resin as the base resin but having no thixotropic propertiesis actually applied to a curved wire, the insulating protective material flows from the applied surface,and ensuring satisfactory thickness as an insulating protective layer becomes difficult. Accordingly,imparting the insulating protective material with suitable thixotropy may be considered as a methodfor retaining the insulating protective material on the applied surface. 7. 7. 7. id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7" id="p-7"
[0007] However, paste-like insulating protective materials in which a fine inorganic filler or the likehas been dispersed in the base resin tend to develop an interface between the insulating componentsuch as the base resin and the inorganic filler following film formation. As a result of the existence ofthis interface in the film, even if a highly insulating resin such as a polyimide resin is used, thedielectric breakdown voltage of the film tends to decrease significantly, and achieving satisfactory insulation properties is difficult. Accordingly, in order to ensure favorable insulation properties for the semiconductor device, the insulating protective material must be applied so as to obtain an insulatingprotective layer with greater thickness, meaning achieving a reduction in thickness becomesproblematic. 8. 8. 8. id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8" id="p-8"
[0008] One method that has been disclosed to improve the deterioration in film insulationperformance caused by the aforementioned development of an interface between the insulatingcomponent and the inorganic filler provides a resin paste containing an organic filler (a resin filler)that dissolves upon heating to exhibit excellent compatibility with the insulating component (PatentDocument 1). By using this resin paste, excellent shape stability can be obtained when printing to flatsubstrates, and excellent insulation properties can be achieved.
However, in investigations conducted by the inventors of the present invention, when theabove resin paste was applied to a wire as an insulating protective material, it became clear that theresin paste did not spread satisfactorily into the space below the wire, meaning voids tended todevelop in the portion beneath the wire. If voids exist in a semiconductor device, then the devicebecomes prone to the effects of humidity, and the reliability of the semiconductor device tends todeteriorate. 9. 9. 9. id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9" id="p-9"
[0009] In light of the above circumstances, achieving a thin semiconductor device having excellentESD resistance requires technology that enables formation of a thin insulating protective layer on theupper portion of a wire using a highly insulating material, and also enables sealing of the spacebeneath the wire without any void formation. Accordingly, in order to address these issues, an obj ectof the present invention relates to the provision of a thin semiconductor device having superior ESDresistance and excellent reliability using a material that is capable of forming the aforementionedinsulating protective layer on the upper portion of a wire and also sealing the space beneath the wire, as well as a method for producing such a semiconductor device.
MEANS TO SOLVE THE PROBLEMS[00 1 0] Embodiments of the present invention relate to the following aspects. However, the presentinvention is not limited to the following, and includes a variety of embodiments.
One embodiment relates to a semiconductor device having a substrate, a semiconductorelement disposed on the substrate, a wire that electrically connects the substrate and the semiconductorelement, a first sealing layer that seals the space below the apex of the wire, and a second sealing layerthat is provided on top of the first sealing layer with the wire interposed therebetween, wherein the first sealing layer is fonned from a cured film of a liquid sealing material, and the second sealing layer is formed from a dried coating film of an insulating resin coating material. [00l 1] In the above embodiment, the semiconductor device preferably also has a resin sealingmember provided so as to cover at least the second sealing layer.
The dielectric breakdown voltage of the dried coating film of the above insulating resincoating material is preferably at least 150 kV/mm.
The insulating resin coating material preferably contains a resin filler having an averageparticle size of 0.1 to 5.0 pm.
The viscosity at 25 °C of the insulating resin coating material is preferably within a range from30 to 500 Pa-s.
The thixotropic index at 25°C of the insulating resin coating material is preferably Within arange from 2.0 to 10.0.[00 l 2] The insulating resin coating material preferably contains at least one insulating resin selectedfrom the group consisting of a polyamide, a polyamideimide and a polyimide.
The thickness of the second sealing layer is preferably not more than 100 pm. The thicknessof the second sealing layer is more preferably 50 pm or less.
The Tg value (glass transition temperature) of the above insulating resin is preferably at leastl 5 0°C.[00 l 3] ln the embodiment described above, the liquid sealing material contains a therrnosetting resincomponent and an inorganic filler, and the thixotropic index at 75°C of the liquid sealing material,obtained as the value of viscosity A/ viscosity B, is preferably Within a range from 0.1 to 2.5, Whereinthe viscosity A is the viscosity (Pa-s) measured under conditions of 75°C and a shear velocity of 5 s'1,and the viscosity B is the viscosity (Pa-s) measured under conditions of 75 °C and a shear velocity of50 s'1.
The chlorine ion content in the liquid sealing material is preferably not more than 100 ppm.
The maximum particle size of the above inorganic filler in the liquid sealing material ispreferably not more than 75 pm.[00 14] The viscosity of the liquid sealing material measured under conditions of 75 °C and a shearvelocity of 5 s* is preferably not more than 3.0 Pa-s.
The viscosity of the liquid sealing material measured under conditions of 25 °C and a shearvelocity of 10 s* is preferably not more than 30 Pa-s.
The amount of the inorganic filler, based on the total mass of the liquid sealing material, ispreferably at least 50% by mass.[00 l 5 ] The above thermosetting resin component in the liquid sealing material preferably contains anaromatic epoxy resin and an aliphatic epoxy resin.
The aromatic epoxy resin preferably contains at least one resin selected from the groupconsisting of a liquid bisphenol epoxy resin and a liquid glycidylamine epoxy resin, and the aliphaticepoxy resin preferably contains a linear aliphatic epoxy resin.
The semiconductor of the embodiment described above can be used favorably in a fingerprintauthentication sensor. However, the device is not limited to fingerprint authentication Sensors, andapplications as an insulating resin coating material for the upper portions of wires in thin devices canbe anticipated. Further, it is surmised that the combination of an insulating resin coating material anda liquid sealing material according to the present invention, and productions methods that utilize thiscombination of materials, will enable the production of novel thin devices. [00 l 6] Another embodiment relates to a method for producing a semiconductor device having asubstrate, a semiconductor element disposed on the substrate, a wire that electrically connects thesubstrate and the semiconductor element, a first sealing layer that seals the space below the apex of thewire, and a second sealing layer that is provided on top of the first sealing layer with the wireinterposed therebetween, the method including: a step of electrically connecting the substrate and the semiconductor element disposed on thesubstrate using the wire, a step of forrning the first sealing layer by supplying a liquid sealing material to the spacebelow the apex of the wire, and a step of forrning the second sealing layer by supplying an insulating resin coating material tothe top of the first sealing layer with the wire interposed therebetween.
The present invention is related to the subject matter disclosed in prior Japanese Application2017-l 5 5 891 filed on August 10, 2017, the entire contents of which are incorporated by reference herein.
EFFECTS OF THE INVENTION[00 l 7] Embodiments of the present invention are able to provide a thin semiconductor device havingsuperior ESD resistance and excellent reliability, and a method for producing such a semiconductor device.
BRIEF DESCRIPTION OF THE DRAWINGS[001 8]FIG. l is a side sectional view of a semiconductor device according to one embodiment.
FIG. 2 is a partial plan view of a semiconductor device according to one embodiment.
FIG. 3 is a series of schematic cross-sectional views describing a method for producing asemiconductor device according to one embodiment, wherein (a) to (d) correspond to each of the steps.
EMBODIMENTS FOR CARRYING OUT THE INVENTION[00 1 9] Embodiments of the present invention are described below in further detail.
The semiconductor device is described using the drawings. In the following description,terms that indicate direction such as "above", "below", "upper portion" and "lower portion" are used tospecify direction within the drawings as appropriate, but in no way limit the direction of installationwhen the device is used. . . . id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20" id="p-20"
[0020] FIG. 1 is a side sectional view of a semiconductor device according to one embodiment. FIG.2 is a partial plan view of the semiconductor device according to one embodiment. As illustrated inFIG. 1 and FIG. 2, the semiconductor device has a substrate l, a semiconductor element 2 disposed ontop of the substrate l, a wire 3 that electrically connects the substrate l and the semiconductor element2, a first sealing layer 4a that seals the space below the apex 3a of the wire 3, and a second sealinglayer 4b that is provided on top of the first sealing layer 4a with the wire 3 interposed therebetween.As illustrated in FIG. 1, the semiconductor device preferably also has a resin sealing member 5provided so as to cover at least the second sealing layer 4b. [002 I ] The apex 3a of the wire means the location at which the height of the wire from the substratesurface, indicated by the reference sign "h" in FIG. l, reaches a maximum. The first sealing layer 4a isformed from the cured film of a liquid sealing material, and is formed by inj ecting the liquid sealingmaterial into a space beneath the wire compartmentalized by the substrate 1, a portion of thesemiconductor element 2, and the arc-shaped wire 3 having the apex 3a. Further, the second sealinglayer 4b is formed from a dried coating film of an insulating resin coating material, and is formed byapplying the insulating resin coating material following formation of the first sealing layer 4a.
In this manner, by adopting the embodiment described above and forming sealing layers usingdifferent materials in the space below the wire apex 3a and the space above the wire, a thinsemiconductor device having superior ESD resistance and excellent reliability can be provided. Thestructure of the semiconductor device is described below in further detail. 22. 22. 22. id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22" id="p-22"
[0022]1. SubstrateThere are no particular limitations on the substrate, and any substrate composed of a material that is capable of mounting a semiconductor element and capable of being subj ected to wire bonding may be used. The material for the substrate may be selected from among known materials within thetechnical field, in accordance with the intended application for the semiconductor device.
For example, when the semiconductor device is used in a fingerprint authenticationapplication, typically, a thin rigid substrate such as a glass epoxy substrate may be used. 23. 23. 23. id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23" id="p-23"
[0023] In another example, when the semiconductor device is used in a power module application,typically, DCB (Direct Copper Bond) substrates and ceramic substrates such as an alumina-basedsubstrates may be used. In those cases where a copper circuit or the like is bonded directly to aceramic substrate, installation of a heat-resistant bonding layer is unnecessary, and therefore superiorheat dissipation and superior insulation properties can be more easily achieved. Accordingly, thesetypes of ceramic substrates having directly bonded copper circuits or the like can be used favorably inhigh-voltage and high-current applications such as vehicle-mounted semiconductors, semiconductorsfor railways and semiconductors for industrial machinery. 24. 24. 24. id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24" id="p-24"
[0024]2. Semiconductor Element The semiconductor element is connected electrically to the substrate via the wire.
For example, the semiconductor element may be a semiconductor element for a fingerprintauthentication sensor, or a Si-IGBT (insulated-gate bipolar transistor), a SiC (silicon carbide) or aMOSFET (metal oxide semiconductor field effect transistor) for a power module application. Thesemiconductor element is not limited to these semiconductor elements, and in any case where asemiconductor element is used that requires ESD resistance, or requires superior insulation propertiesfor use under high-voltage and high-current conditions, the effects provided by the above embodimentcan be easily realized. . . . id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25" id="p-25"
[0025] The semiconductor element and the substrate are typically conductively bonded together bysolder balls or the like. When a semiconductor element for a power module application is used, theconductive bonding between the semiconductor element and the substrate may also use other materialsbesides solder balls such as sintered silver and sintered copper. 26. 26. 26. id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26" id="p-26"
[0026]3. Wire The wire is used for electrically connecting the semiconductor element and the substrate. Thematerial for the wire may be selected from among known materials within the technical field, inaccordance with the intended application for the semiconductor device. For example, in those caseswhere the semiconductor device is to be used in a fmgerprint authentication sensor application, a goldwire, silver alloy wire or copper wire or the like may be used. Gold wires are typically the mostwidely used. In another example, in those cases where the semiconductor device is to be used in a power module application, an aluminum wire is typically used. 27. 27. 27. id="p-27" id="p-27" id="p-27" id="p-27" id="p-27" id="p-27" id="p-27" id="p-27" id="p-27" id="p-27"
[0027]4a. First Sealing Layer The first sealing layer is formed from the cured film of a liquid sealing material. As can beseen in FIG. 1, the first sealing layer is formed by inj ecting the liquid sealing material into a spacebeneath the wire compartmentalized by the substrate 1, a portion of the semiconductor element 2 andthe arc-shaped wire 3 having the apex 3a, and then curing the liquid sealing material. 28. 28. 28. id="p-28" id="p-28" id="p-28" id="p-28" id="p-28" id="p-28" id="p-28" id="p-28" id="p-28" id="p-28"
[0028] ln one embodiment, the liquid sealing material contains a resin component and an inorganicfiller. When the viscosity (Pa-s) of the liquid sealing material measured under conditions of 75 °C anda shear velocity of 5 s* is deemed as viscosity A, and the viscosity (Pa-s) measured under conditionsof 75°C and a shear velocity of 50 s* is deemed as viscosity B, the thixotropic index at 75°C of theliquid sealing material, obtained as the value of viscosity A/ viscosity B, is preferably within a rangefrom 0.1 to 2.5. The liquid sealing material may, if necessary, also contain other components besidesthe resin component and the inorganic filler. 29. 29. 29. id="p-29" id="p-29" id="p-29" id="p-29" id="p-29" id="p-29" id="p-29" id="p-29" id="p-29" id="p-29"
[0029] ln this description, the term "liquid sealing material" means a resin material that is liquid atroom temperature, can be cured by heating or the like, and can be used favorably as an underfillmaterial for filling the space between the semiconductor element and the substrate. Using the liquidsealing material to seal the space beneath the Wire with no voids means that When the space above thewire is subsequently sealed with an insulating resin coating material, problems such as wire flow orthe like caused by the coating material can be avoided. Further, other problems such as liquid flow ofthe insulating resin coating material during application can also be prevented, facilitating retention ofthe coating material on the wire application surface. . . . id="p-30" id="p-30" id="p-30" id="p-30" id="p-30" id="p-30" id="p-30" id="p-30" id="p-30" id="p-30"
[0030] When a thixotropic index at 75 °C of the liquid sealing material is within a range from 0.1 to2.5, it makes easier to seal the space beneath the wire without voids by the liquid sealing material.[003 l] Although not a particular limitation, in one embodiment, the thixotropic index of the liquidsealing material at 75 °C is more preferably within a range from 0.5 to 2.0, and even more preferablyfrom 1.0 to 2.0. 32. 32. 32. id="p-32" id="p-32" id="p-32" id="p-32" id="p-32" id="p-32" id="p-32" id="p-32" id="p-32" id="p-32"
[0032] The viscosity (Pa-s) of the liquid sealing material measured under conditions of 75°C and ashear velocity of 5 s* is preferably not more than 3.0 Pa-s, and more preferably 2.0 Pa-s or less.Provided the viscosity (Pa-s) of the liquid sealing material at 75°C and a shear velocity of 5 s* is notmore than 3.0 Pa-s, the occurrence of Wire flow tend to be more effectively suppressed When the liquid sealing material is applied around the wire.
Although there are no particular limitations on the lower limit for the above viscosity, fromthe viewpoint of retaining the material in the applied state around the periphery of the wire, theviscosity is preferably at least 0.01 Pa-s. 33. 33. 33. id="p-33" id="p-33" id="p-33" id="p-33" id="p-33" id="p-33" id="p-33" id="p-33" id="p-33" id="p-33"
[0033] The liquid sealing material has a viscosity measured at 25 °C and a shear Velocity of 10 s* thatis preferably not more than 30 Pa-s, and more preferably 20 Pa-s or less. Although there are noparticular limitations on the lower limit for this viscosity, from the viewpoint of retaining the materialin the applied state around the periphery of the wire, the viscosity is preferably at least 0.1 Pa-s.[0034] The viscosity of the liquid sealing material at 25°C is a Value measured using an E-typeviscometer (for example, a VISCONIC EHD manufactured by Tokyo Keiki lnc.), whereas theviscosity at 75°C is a Value measured using a rheometer (for example, a product AR2000manufactured by TA Instruments, lnc.). . . . id="p-35" id="p-35" id="p-35" id="p-35" id="p-35" id="p-35" id="p-35" id="p-35" id="p-35" id="p-35"
[0035] The thixotropic index at 75°C for the liquid sealing material is obtained as the Value ofviscosity A / viscosity B, where the viscosity measured under conditions of 75°C and a shear Velocityof 5 s* is deemed as viscosity A, and the viscosity measured under conditions of 75°C and a shearVelocity of 50 s* is deemed as viscosity B. 36. 36. 36. id="p-36" id="p-36" id="p-36" id="p-36" id="p-36" id="p-36" id="p-36" id="p-36" id="p-36" id="p-36"
[0036] There are no particular limitations on the method used to ensure that the liquid sealingmaterial satisfies the viscosity condition described above. For example, examples of methods forreducing the viscosity of the liquid sealing material include methods that use a low-viscosity resincomponent and methods in Which a solvent is added, and any one of these methods or a combinationof methods may be used. 37. 37. 37. id="p-37" id="p-37" id="p-37" id="p-37" id="p-37" id="p-37" id="p-37" id="p-37" id="p-37" id="p-37"
[0037] There are no particular limitations on the resin component contained in the liquid sealingmaterial, provided the liquid sealing material is able to satisfy the condition described above. Fromthe Viewpoints of the compatibility with existing facilities, and the stability of the characteristics of theliquid sealing material, the use of a thermosetting resin component is preferred, and the use of anepoxy resin is more preferred. Furthermore, the use of a resin component that is liquid at normaltemperature (25 °C) (hereafter also simply described as "liquid") is preferable, and the use of a liquidepoxy resin is particularly preferred. The resin component may also be a combination of an epoxyresin and a curing agent. 38. 38. 38. id="p-38" id="p-38" id="p-38" id="p-38" id="p-38" id="p-38" id="p-38" id="p-38" id="p-38" id="p-38"
[0038](Epoxy Resin) Examples of an epoxy resin that may be used as the liquid sealing material include adiglycidyl ether epoxy resins of bisphenol A, bisphenol F, bisphenol AD, bisphenol S andhydrogenated bisphenol A, a resin (novolac epoxy resin) typified by ortho-cresol novolac epoxy resinobtained by epoxidation of a novolac resin of a phenol and an aldehyde, a glycidyl ester epoxy resinobtained by the reaction of an epichlorohydrin and a polybasic acid such as phthalic acid or dimeracid, a glycidylamine epoxy resin obtained by the reaction of an epichlorohydrin and an aminecompound such as p-aminophenol, diaminodiphenylmethane and isocyanuric acid, a linear aliphaticepoxy resin obtained by oxidation of an olefin bond With a peracid such as a peracetic acid, and analicyclic epoxy resin. A single epoxy resin may be used alone, or a combination of two or more resinsmay be used. 39. 39. 39. id="p-39" id="p-39" id="p-39" id="p-39" id="p-39" id="p-39" id="p-39" id="p-39" id="p-39" id="p-39"
[0039] Among the above epoxy resins, from the viewpoints of the viscosity, actual usage experienceand material cost, at least one resin selected from the group consisting of a diglycidyl ether epoxyresin and a glycidylamine epoxy resin is preferred. Among such resins, from the viewpoint of fluidity,a liquid bisphenol epoxy resin is preferred, whereas from the viewpoints of heat resistance,adhesiveness and fluidity, a liquid glycidylamine epoxy resin is preferred. 40. 40. 40. id="p-40" id="p-40" id="p-40" id="p-40" id="p-40" id="p-40" id="p-40" id="p-40" id="p-40" id="p-40"
[0040] ln one embodiment, the liquid sealing material uses an epoxy resin having an aromatic ring(an aromatic epoxy resin) and an aliphatic epoxy resin as resin components. For example, a liquidbisphenol F epoxy resin and a liquid glycidylamine epoxy resin may be used as the aromatic epoxyresin, and a linear aliphatic epoxy resin may be used as the aliphatic epoxy resin. [004l] Examples of the glycidylamine epoxy resin include p-(2,3-epoxypropoxy)-N,N-bis(2,3-epoxypropyl)aniline, diglycidylaniline, diglycidyltoluidine, diglycidylmethoxyaniline,diglycidyldimethylaniline and diglycidyltrifluoromethylaniline.
Examples of the linear aliphatic epoxy resin include l,6-hexanediol diglycidyl ether,resorcinol diglycidyl ether, propylene glycol diglycidyl ether, l,3-bis(3-glycidoxypropyl)tetramethyldisiloxane and cyclohexanedimethanol diglycidyl ether. 42. 42. 42. id="p-42" id="p-42" id="p-42" id="p-42" id="p-42" id="p-42" id="p-42" id="p-42" id="p-42" id="p-42"
[0042] In those cases where a combination of a liquid bisphenol F epoxy resin, a liquid glycidylamineepoxy resin and a linear aliphatic epoxy resin is used as the epoxy resin, there are no particularlimitations on the blend ratio between these compounds. The blend ratio may be such that, forexample, the liquid glycidylamine epoxy resin represents 40% by mass to 70% by mass of the totalmass, and the combination of the liquid bisphenol F epoxy resin and the linear aliphatic epoxy resinrepresents 30% by mass to 60% by mass of the total mass. 43. 43. 43. id="p-43" id="p-43" id="p-43" id="p-43" id="p-43" id="p-43" id="p-43" id="p-43" id="p-43" id="p-43"
[0043] From the viewpoint of ensuring satisfactory manifestation of their properties, the amount ofthe epoxy resin described above (or the combined mass in the case of a combination of two or more ofthe above epoxy resins) within the total mass of all epoxy resins is preferably at least 20% by mass,more preferably at least 30% by mass, and even more preferably 50% by mass or greater. There areno particular limitations on the upper limit for this amount, and the amount may be determined so as toachieve the desired properties and characteristics for the liquid sealing material. 44. 44. 44. id="p-44" id="p-44" id="p-44" id="p-44" id="p-44" id="p-44" id="p-44" id="p-44" id="p-44" id="p-44"
[0044] A liquid epoxy resin is preferably used as the epoxy resin, but an epoxy resin that is solid atnormal temperature (25 °C) may also be used in combination. In those cases where an epoxy resin thatis solid at normal temperature is used in combination with the liquid epoxy resin, the proportion of thesolid epoxy resin is preferably not more than 20% by mass of the total mass of all the epoxy resin.[0045] From the viewpoint of suppressing Wire corrosion, the chlorine ion content in the liquidsealing material is preferably as low as possible. Specifically, the chlorine ion content is preferablynot more than 100 ppm. ln this description, the chlorine ion content in the liquid sealing material is obtained bytreating the material by ion chromatography using a sodium carbonate solution as the eluent underconditions including a temperature of l2l°C and a time of 20 hours, and represents the value (ppm)equivalent to 2.5g/50cc. 46. 46. 46. id="p-46" id="p-46" id="p-46" id="p-46" id="p-46" id="p-46" id="p-46" id="p-46" id="p-46" id="p-46"
[0046](Curing Agent) The types of compounds typically used as curing agents for epoxy resin such as amine-basedcuring agents, phenol-based curing agents and acid anhydride-based curing agents may be used as thecuring agent without any particular limitations. From the viewpoint of suppressing Wire flow, the useof a liquid curing agent is preferred. From the viewpoints of exhibiting excellent resistance totemperature cycling and excellent moisture resistance and the like, and being capable of improving thereliability of semiconductor packages, the curing agent is preferably an aromatic amine compound,and is more preferably a liquid aromatic amine compound. A single curing agent may be used alone,or a combination of two or more curing agents may be used. 47. 47. 47. id="p-47" id="p-47" id="p-47" id="p-47" id="p-47" id="p-47" id="p-47" id="p-47" id="p-47" id="p-47"
[0047] Examples of the liquid aromatic amine compound include diethyltoluenediamine, l-methyl-3,5-diethyl-2,4-diaminobenzene, l-methyl-3,5-diethyl-2,6-diaminobenzene, l,3,5-triethyl-2,6-diaminobenzene, 3 ,3 '-diethyl-4,4'-diaminodiphenylmethane, 3 ,5 ,3 ', 5 '-tetramethyl -4,4'-diaminodiphenylmethane, and dimethylthiotoluenediamine. 48. 48. 48. id="p-48" id="p-48" id="p-48" id="p-48" id="p-48" id="p-48" id="p-48" id="p-48" id="p-48" id="p-48"
[0048]The liquid aromatic amine compound may also be obtained in the form of a commercially available product. Examples of products that can be obtained include j ER Cure W (product name, ll manufactured by Mitsubishi Chemical Corporation), KAYAHARD A-A, KAYAHARD A-B andKAYAHARD A-S (product names, manufactured by Nippon Kayaku Co., Ltd.), TOHTO AMINEHM-205 (product name, manufactured by NIPPON STEEL Chemical & Material Co., Ltd.), ADEKAHARDENER EH-l 01 (product name, manufactured by ADEKA Corporation), EPOMIK Q-640 andEPOMIK Q-643 (product names, manufactured by Mitsui Chemicals, lnc.), and DETDA80 (productname, manufactured by Lonza Group AG). 49. 49. 49. id="p-49" id="p-49" id="p-49" id="p-49" id="p-49" id="p-49" id="p-49" id="p-49" id="p-49" id="p-49"
[0049] Among the various liquid aromatic amine compounds, from the viewpoint of the storagestability of the liquid sealing material, 3,3'-diethyl-4,4'-diaminodiphenylmethane,diethyltoluenediamine and dimethylthiotoluenediamine are preferred. Any of these compounds or amixture thereof is preferably used as the main component of the curing agent. Examples of thediethyltoluenediamine include 3,5-diethyltoluene-2,4-diamine and 3,5-diethyltoluene-Z,6-diamine, andeither of these compounds may be used alone or a combination of both compounds may be used,although the proportion of 3,5-diethyltoluene-2,4-diamine is preferably at least 60% by mass of thetotal mass of diethyltoluenediamine. 50. 50. 50. id="p-50" id="p-50" id="p-50" id="p-50" id="p-50" id="p-50" id="p-50" id="p-50" id="p-50" id="p-50"
[0050] There are no particular limitations on the amount of the curing agent in the liquid sealingmaterial, which may be selected With due consideration of factors such as the equivalence ratiorelative to the epoxy resin. From the viewpoint of suppressing the amounts of unreacted epoxy resinor curing agent, the amount of the curing agent is preferably an amount that ensures that the ratio ofthe number of equivalents of functional groups in the curing agent (for example, the number ofequivalents of active hydrogens in the case of an amine-based curing agent) relative to the number ofequivalents of epoxy groups in the epoxy resin is within a range from 0.7 to 1.6 is preferred, anamount that yields a ratio Within a range from 0.8 to l.4 is more preferred, and a ratio that yields aratio within a range from 0.9 to 1.2 is even more preferred. 51. 51. 51. id="p-51" id="p-51" id="p-51" id="p-51" id="p-51" id="p-51" id="p-51" id="p-51" id="p-51" id="p-51"
[0051] There are no particular limitations on the type of inorganic f1ller included in the liquid sealingmaterial. Examples include powders of silica, calcium carbonate, clay, alumina, silicon nitride, siliconcarbide, boron nitride, calcium silicate, potassium titanate, aluminum nitride, beryllia, zirconia, zircon,forsterite, steatite, spinel, mullite and titania, as well as beads obtained by spheroidization of thesepowders and glass fiber and the like. Moreover, an inorganic f1ller having a flame retardant effectmay also be used, and examples of such inorganic fillers include aluminum hydroxide, magnesiumhydroxide, zinc borate, and zinc molybdate. A single inorganic filler may be used alone, or acombination of two or more inorganic fillers may be used. 52. 52. 52. id="p-52" id="p-52" id="p-52" id="p-52" id="p-52" id="p-52" id="p-52" id="p-52" id="p-52" id="p-52"
[0052] 12 Among the various inorganic fillers, from the viewpoints of ease of availability, chemicalstability and material costs, silica is preferred. Examples of the silica include spherical silica andcrystalline silica, but from the viewpoint of enhancing the fluidity and permeability of the liquidsealing material into narrow spaces, a spherical silica is preferred. Examples of the spherical silicainclude silica obtained by the vaporized metal combustion method and fused silica and the like. 53. 53. 53. id="p-53" id="p-53" id="p-53" id="p-53" id="p-53" id="p-53" id="p-53" id="p-53" id="p-53" id="p-53"
[0053] The inorganic filler may have a surface that has been subj ected to a surface treatment. Forexample, the inorganic filler may have been surface-treated With a coupling agent described below.[0054] The volume average particle size of the inorganic f1ller is preferably within a range from 0.1um to 30 um, more preferably from 0.3 um to 5 um, and even more preferably from 0.5 um to 3 um.Particularly in the case of a spherical silica, the volume average particle size preferably falls within theabove range. Provided the volume average particle size is at least 0.1 um, the dispersibility within theliquid sealing material is excellent, and the fluidity tends to be excellent. Provided the volume averageparticle size is not more than 30 um, precipitation of the inorganic filler within the liquid sealingmaterial is reduced, and the permeability and fluidity of the liquid sealing material into narrow Spacesimprove, meaning the occurrence of voids and unfilled portions tends to be better suppressed. 55. 55. 55. id="p-55" id="p-55" id="p-55" id="p-55" id="p-55" id="p-55" id="p-55" id="p-55" id="p-55" id="p-55"
[0055] The volume average particle size of the inorganic filler means the particle size in the volume-based particle size distribution obtained using a laser diffraction particle size distribution analyzerwhere the accumulated value from the small particle side reaches 50% (namely, D50%). 56. 56. 56. id="p-56" id="p-56" id="p-56" id="p-56" id="p-56" id="p-56" id="p-56" id="p-56" id="p-56" id="p-56"
[0056] The maximum particle size of the inorganic filler is preferably not more than 75 um, moreoverpreferably not more than 50 um, and even more preferably 20 um or less.[0057] ln this description, the maximum particle size of the inorganic filler means the particle size inthe volume-based particle size distribution where the accumulated value from the small particle sidereaches 99% (namely, D99%). [005 8] The amount of the inorganic filler is preferably at least 50% by mass based on the total massof the liquid sealing material. Provided the amount of the inorganic frller is at least 50% by massbased on the total mass of the liquid sealing material, the heat dissipation properties and strength in thevicinity of the wire tend to be satisfactorily maintained. The amount of the inorganic filler based onthe total mass of the liquid sealing material is more preferably at least 60% by mass, and even more preferably 70% by mass or greater. 13 From the viewpoint of suppressing any increase in the viscosity of the liquid sealing material,the amount of the inorganic filler is preferably not more than 80% by mass based on the total mass ofthe liquid sealing material. 59. 59. 59. id="p-59" id="p-59" id="p-59" id="p-59" id="p-59" id="p-59" id="p-59" id="p-59" id="p-59" id="p-59"
[0059] The liquid sealing material may contain a solvent. By including a solvent, the viscosity of theliquid sealing material can be easily adjusted to a value within the desired range. A single solvent maybe used alone, or a combination of two or more solvents may be used. 60. 60. 60. id="p-60" id="p-60" id="p-60" id="p-60" id="p-60" id="p-60" id="p-60" id="p-60" id="p-60" id="p-60"
[0060] There are no particular limitations on the type of solvent used, and the solvent may be selectedfrom among those solvents typically used in the resin compositions used in mounting techniques forsemiconductor devices. Specific examples include: alcohol-based solvents such as butyl carbitol acetate, methyl alcohol, ethyl alcohol, propylalcohol and butyl alcohol, ketone-based solvents such as acetone and methyl ethyl ketone, glycol ether-based solvents such as ethylene glycol ethyl ether, ethylene glycol methyl ether,ethylene glycol butyl ether, propylene glycol methyl ether, dipropylene glycol methyl ether, propyleneglycol ethyl ether, and propylene glycol methyl ether acetate, lactone-based solvents such as y-butyrolactone, ö-Valerolactone, and a-caprolactone, amide-based solvents such as dimethylacetamide and dimethylforrnamide, and aromatic-based solvents such as toluene and xylene.
From the viewpoint of preventing bubble formation caused by overly rapid volatilizationduring curing of the liquid sealing material, the use of a high-boiling point solvent (for example, aboiling point of at least l70°C at normal pressure) is preferred. [006 l ] In those cases where the liquid sealing material contains a solvent, although there are noparticular limitations on the amount of the solvent, the amount is preferably within a range from 1%by mass to 70% by mass of the total mass of the liquid sealing material. 62. 62. 62. id="p-62" id="p-62" id="p-62" id="p-62" id="p-62" id="p-62" id="p-62" id="p-62" id="p-62" id="p-62"
[0062] The liquid sealing material may, if necessary, also contain a curing accelerator that acceleratesthe reaction between the epoxy resin and the curing agent.
There are no particular limitations on the curing accelerator, and conventionally knowncompounds may be used. Examples include: cycloamidine compounds such as 1,8-diaza-bicyclo[5.4.0]undecene-7, l,5-diaza- bicyclo[4.3.0]nonene, and 5,6-dibutylamino-l,8-diaza-bicyclo[5.4.0]undecene-7, 14 tertiary amine compounds such as triethylenediamine, benzyldimethylamine, triethanolamine,dimethylaminoethanol and tris(dimethylaminomethyl)phenol, imidazole compounds such as 2-methylimidazole, 2-ethyl-4-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, l-benzyl-2-phenylimidazole, l-benzyl-2-methylimidazole, 2-phenyl-4,5-dihydroxymethylimidazole, 2-phenyl-4-methyl-5-hydroxymethylimidazole, 2,4-diamino-6-(2'-methylimidazolyl-(l'))-ethyl-s-triazine, and 2-heptadecylimidazole, organophosphine compounds such as trialkylphosphines (such as tributylphosphine),dialkylarylphosphines (such as dimethylphenylphosphine), alkyldiarylphosphines (such asmethyldiphenylphosphine), triphenylphosphine, and alkyl-substituted triphenylphosphines, and compounds having intramolecular polarization obtained by adding, to any of the aboveorganophosphines, a compound having a n bond such as maleic anhydride, a quinone compound suchas 1,4-benzoquinone, 2,5-toluquinone, l,4-naphthoquinone, 2,3-dimethylbenzoquinone, 2,6-dimethylbenzoquinone, Zß-dimethoxy-S-methyl-l A-benzoquinone, 2,3-dimethoxy-1,4-benzoquinoneor phenyl-IA-benzoquinone, diazophenylmethane, or a phenol resin, as well as derivatives of thesecompounds.
Additional examples include phenyl boron salts such as 2-ethyl-4-methylimidazoletetraphenylborate and N-methylmorpholine tetraphenylborate. Furthermore, examples of curingaccelerators having latency include core-shell particles having a core composed of a compound havingan amino group that is solid at normal temperature coated With a shell composed of an epoxycompound that is solid at normal temperature. A single curing accelerator may be used alone, or acombination of two or more curing accelerators may be used. 63. 63. 63. id="p-63" id="p-63" id="p-63" id="p-63" id="p-63" id="p-63" id="p-63" id="p-63" id="p-63" id="p-63"
[0063] ln those cases Where the liquid sealing material contains a curing accelerator, although thereare no particular limitations on the amount of the curing accelerator, the amount is preferably within arange from 0.1 parts by mass to 40 parts by mass, and more preferably from 1 part by mass to 20 partsby mass, per 100 parts by mass of the epoxy resin. 64. 64. 64. id="p-64" id="p-64" id="p-64" id="p-64" id="p-64" id="p-64" id="p-64" id="p-64" id="p-64" id="p-64"
[0064] From the viewpoints of improving the thermal shock resistance and reducing stress on thesemiconductor element, the liquid sealing material may, if necessary, also contain a flexibility agent.
There are no particular limitations on the flexibility agent, Which may be selected from amongflexibility agents typically used in resin compositions. Among these typical flexibility agents, rubberparticles are preferred. Examples of the rubber particles include particles of styrene-butadiene rubber(SBR), nitrile-butadiene rubber (N BR), butadiene rubber (BR), urethane rubber (UR) and acrylic rubber (AR). Among these rubbers, from the viewpoints of the heat resistance and moisture resistance, acrylic rubber particles are preferred, and acrylic-based polymer particles having a core-shell structure (namely, core-shell acrylic rubber particles) are more preferred.[0065] Further, silicone rubber particles can also be used favorably. Examples of the silicone rubberparticles include silicone rubber particles obtained by crosslinking a polyorganosiloxane such as alinear polydimethylsiloxane, polymethylphenylsiloxane or polydiphenylsiloxane, particles obtained bycoating the surfaces of silicone rubber particles with a silicone resin, and core-shell polymer particlescomposed of a core of a solid silicone particle obtained by emulsion polyrnerization or the like and ashell of an organic polymer such as an acrylic resin. The shape of these silicone rubber particles maybe either amorphous or spherical, but in order to lower the viscosity of the liquid sealing material, aspherical shape is preferred. These silicone rubber particles can be obtained as commercially availableproducts from companies such as Dow Coming Toray Silicone Co., Ltd., and Shin-Etsu Chemical Co.,Ltd. 66. 66. 66. id="p-66" id="p-66" id="p-66" id="p-66" id="p-66" id="p-66" id="p-66" id="p-66" id="p-66" id="p-66"
[0066] The liquid sealing material may also contain a coupling agent for the purpose of improving theadhesion at the interface between the resin component and the inorganic filler, or at the interfacebetween the resin component and the wire. The coupling agent may be used for surface treatment ofthe inorganic filler, or may be added separately from the inorganic filler. 67. 67. 67. id="p-67" id="p-67" id="p-67" id="p-67" id="p-67" id="p-67" id="p-67" id="p-67" id="p-67" id="p-67"
[0067] There are no particular limitations on the coupling agent, and conventional materials may beused. Examples include a silane compound having an amino group (primary, secondary or tertiary),various other silane compounds such as an epoxysilane, a mercaptosilane, an alkylsilane, anureidosilanes and a vinylsilane, as well as a titanium compound, an aluminum chelate, andaluminum/zirconium-based compounds. A single coupling agent may be used alone, or a combinationof two or more coupling agents may be used. 68. 68. 68. id="p-68" id="p-68" id="p-68" id="p-68" id="p-68" id="p-68" id="p-68" id="p-68" id="p-68" id="p-68"
[0068] Specific examples of a silane coupling agent include vinyltrichlorosilane, vinyltriethoxysilane,vinyltris(ß-methoxyethoxyfiilane, y-methacryl0xypropyltrimethoxysilane, ß-(S, 4-epoxycyclohexyl)ethyltrimethoxysilane, y-glycidoxypropyltrimethoxysilane, y-glycidoxypropylmethyldimethoxysilane, vinyltriacetoxysilane, y-mercaptopropyltrimethoxysilane, y-aminopropyltrimethoxysilane, y-aminopropylmethyldimethoxysilane, y-aminopropyltriethoxysilane, y-aminopropylmethyldiethoxysilane, y-anilinopropyltrimethoxysilane, y-anilinopropyltriethoxysilane, y-(N ,N-dimethyl)aminopropyltrimethoxysilane, y-(N,N-diethyl)aminopropyltrimethoxysilane, y-(N,N-dibutyl)aminopropyltrimethoxysilane, y-(N-methyl)anilinopropyltrimethoxysilane, y-(N-ethyl)anilinopropyltrimethoxysilane, y-(N,N-dimethyl)aminopropyltriethoxysilane, y-(N,N-diethyl)aminopropyltriethoxysilane, y-ßLN-dibutyl)aminopropyltriethoxysilane, y-Ü\I- 16 methyl)anilinopropyltriethoxysilane, y-(N-ethyl)anilinopropyltriethoxysilane, y-(N,N-dimethyl)aminopropylmethyldimethoxysilane, y-(N,N-diethyl)aminopropylmethyldimethoxysilane, y-(N ,N-dibutyl)aminopropylmethyldimethoxysilane, y-(N-methyl)anilinopropylmethyldimethoxysilane,y-(N-ethyl)anilinopropylmethyldimethoxysilane, N-(trimethoxysilylpropyl)ethylenediamine, N-(dimethoxyrnethylsilylisopropyl)ethylenediamine, methyltrimethoxysilane, dimethyldimethoxysilane,methyltriethoxysilane, y-chloropropyltrimethoxysilane, hexamethyldisilane, vinyltrimethoxysilane,and y-mercaptopropylmethyldimethoxysilane. 69. 69. 69. id="p-69" id="p-69" id="p-69" id="p-69" id="p-69" id="p-69" id="p-69" id="p-69" id="p-69" id="p-69"
[0069] Specific examples of a titanium coupling agent include isopropyl triisostearoyl titanate,isopropyl tris(dioctylpyrophosphate) titanate, isopropyl tri(N-aminoethyl-aminoethyl) titanate,tetraoctylbis(ditridecylphosphite) titanate, tetra(2,2-diallyloxymethyl-l -butyl) bis(ditridecyl) phosphitetitanate, bis(dioctylpyrophosphate) oxyacetate titanate, bis(dioctylpyrophosphate) ethylene titanate,isopropyl trioctanoyl titanate, isopropyl dimethacrylisostearoyl titanate, isopropyltridodecylbenzenesulfonyl titanate, isopropyl isostearoyl diacryl titanate, isopropyltri(dioctylphosphate) titanate, isopropyl tricumylphenyl titanate, and tetraisopropylbis(dioctylphosphite) titanate. 70. 70. 70. id="p-70" id="p-70" id="p-70" id="p-70" id="p-70" id="p-70" id="p-70" id="p-70" id="p-70" id="p-70"
[0070] ln those cases where the liquid sealing material contains a coupling agent, the amount of thecoupling agent is not particularly limited, but is preferably within a range from l part by mass to 30parts by mass per 100 parts by mass of the inorganic filler. [007 l ] From the viewpoints of improving the anti-migration properties, moisture resistance and high-temperature storage properties and the like of the semiconductor package, the liquid sealing materialmay also contain an ion trapping agent. A single ion trapping agent may be used alone, or acombination of two or more ion trapping agents may be use. 72. 72. 72. id="p-72" id="p-72" id="p-72" id="p-72" id="p-72" id="p-72" id="p-72" id="p-72" id="p-72" id="p-72"
[0072] Examples of the ion trapping agent include anion exchangers represented by compositionalformulas (V) and (VI) shown below.
Mg1.aAla(OH)2(CO3)a/2-mHgO (V) (wherein 0 < a í 0.5, and m is a positive number) BiOa(OH)b(NO3)c (VI) (wherein 0.9 í a í 1.1, 0.6 í b í 0.8, and 0.2 í c í 0.4)[0073] A compound of the above formula (V) can be obtained as a commercially available product (product name: DHT-4A, manufactured by Kyowa Chemical Industry Co., Ltd.). Further, a compound of the above forrnula (VI) can also be obtained as a commercially available product 17 (product name: IXE500, manufactured by Toagosei Co., Ltd.). Other anion exchangers besides thecompounds mentioned above may also be used as ion trapping agents. Examples include oxidehydrates of elements selected from among magnesium, aluminum, titanium, zirconium, and antimonyand the like. 74. 74. 74. id="p-74" id="p-74" id="p-74" id="p-74" id="p-74" id="p-74" id="p-74" id="p-74" id="p-74" id="p-74"
[0074] In those cases where the liquid sealing material contains an ion trapping agent, there are noparticular limitations on the amount of the ion trapping agent. For example, the amount is preferablywithin a range from 0.1% by mass to 30% by mass, and more preferably from 03% by mass to 1.5%by mass, of the total mass of the liquid sealing material. 75. 75. 75. id="p-75" id="p-75" id="p-75" id="p-75" id="p-75" id="p-75" id="p-75" id="p-75" id="p-75" id="p-75"
[0075] In those cases where the ion trapping agent is particulate, the volume average particle size(D50%) of the particles is preferably within a range from 0.1 um to 3.0 um. Further, the maximumparticle size is preferably not more than 10 um. 76. 76. 76. id="p-76" id="p-76" id="p-76" id="p-76" id="p-76" id="p-76" id="p-76" id="p-76" id="p-76" id="p-76"
[0076] The liquid sealing material may, if necessary, also contain other components besides thosedescribed above. For example, a colorant such as a dye and carbon black, a diluent, a leveling agentand an antifoaming agent may be added according to need. 77. 77. 77. id="p-77" id="p-77" id="p-77" id="p-77" id="p-77" id="p-77" id="p-77" id="p-77" id="p-77" id="p-77"
[0077]4b. Second Sealing Layer The second sealing layer 4b is formed from a dried coating film of an insulating resin coatingmaterial, and is formed by applying the insulating resin coating material following formation of thefirst sealing layer 4a. The second sealing layer 4b functions as an insulating protective layer for thewire. 78. 78. 78. id="p-78" id="p-78" id="p-78" id="p-78" id="p-78" id="p-78" id="p-78" id="p-78" id="p-78" id="p-78"
[0078] The insulating resin coating material has one or more of the following characteristics. (i) The dielectric breakdown voltage, at least following film formation, is at least 150 kV/mm (ii) The insulating resin coating material contains a resin filler having an average particle sizeof0.l to 5.0 um. (iii) The viscosity at 25°C is within a range from 30 to 500 Pa-s. (iv) The thixotropic index at 25 °C is within a range from 2.0 to 10.0. (v) Following film formation under heat, the insulating resin component and the resin filler aredispersed uniformly, and no interface develops between the insulating resin component and the resinfiller. Accordingly, superior insulation properties can be maintained even in the case of a thin film.[0079] With the insulating resin coating material, there is a possibility that voids may form during application, depending on the shape of the semiconductor device that represents the application target. 18 For example, in the case of protection of the portion above a wire in a semiconductor device, becausethe ends of the wire are secured, a space is forrned beneath the wire, and therefore in the subsequentsealing step, there is a possibility that the sealing material may not satisfactorily penetrate into thatspace. When a void exists in a semiconductor device, the effects of humidity and the like can have asignificant effect in lowering the reliability of the semiconductor device, and therefore the formationof voids within a semiconductor device is usually not permitted. 80. 80. 80. id="p-80" id="p-80" id="p-80" id="p-80" id="p-80" id="p-80" id="p-80" id="p-80" id="p-80" id="p-80"
[0080] ln order to avoid the formation of this type of void in the semiconductor device or the wireportion, by first sealing the portion beneath the wire with the liquid sealing material described above,void formation in the semiconductor device can be suppressed, and the reliability of the semiconductordevice can be improved. The liquid sealing material fills the space beneath the wire, and not onlycontributes to maintaining the reliability of the semiconductor, but also has an effect in protecting thewire itself The wire can sometimes collapse under the pressure applied during the device sealing step.However, by first performing sealing with the liquid sealing material, collapse of the wire can also beavoided. [008 1] ln one embodiment, the insulating resin coating material preferably has a dielectric breakdownvoltage following film formation that is at least 150 kV/mm, contains a resin filler having an averageparticle size of 0.1 to 5.0 um, has a viscosity at 25°C of 30 to 500 Pa-s, and has a thixotropic index of2.0 to 10.0. 82. 82. 82. id="p-82" id="p-82" id="p-82" id="p-82" id="p-82" id="p-82" id="p-82" id="p-82" id="p-82" id="p-82"
[0082] The dielectric breakdown voltage following film formation is preferably at least 150 kV/mm,and is more preferably 200 kV/mm or greater. ln one embodiment, the insulating resin coatingmaterial enables a dielectric breakdown voltage of at least 200 kV/mm to be obtained, and cancontribute to reduced thickness of the semiconductor device. 83. 83. 83. id="p-83" id="p-83" id="p-83" id="p-83" id="p-83" id="p-83" id="p-83" id="p-83" id="p-83" id="p-83"
[0083] The insulating resin may be selected from among highly heat-resistant resins such as apolyamide, a polyamideimide and a polyimide. In one embodiment, the insulating resin coatingmaterial preferably contains at least one insulating resin selected from the group consisting of apolyamide, a polyamideimide and a polyimide. In particular, in terms of not requiring a high-temperature imidization treatment during formation of the semiconductor device, a polyamide orpolyamideimide is preferred, and in terms of achieving superior heat resistance, a polyamideimideresin is particularly desirable. Any highly heat-resistant resin that exhibits excellent adhesion to resinsealing members may be used. If a polyimide has a resin structure that remains soluble in solventseven following imide group formation, then from the viewpoint of heat resistance, a polyamide issometimes the most preferred. 84. 84. 84. id="p-84" id="p-84" id="p-84" id="p-84" id="p-84" id="p-84" id="p-84" id="p-84" id="p-84" id="p-84"
[0084] 19 The components that constitute the insulating resin coating material are described below. Theinsulating resin coating material contains a mixed solvent that includes a first polar solvent (A1) and a second polar solvent (A2) havinga boiling point lower than that of the first polar solvent (A1) in a mass ratio (A1:A2) within a rangefrom 6:4 to 9:1, an insulating heat-resistant resin (B) that is soluble in the mixed solvent of the first polarsolvent (Al) and the second polar solvent (A2) at room temperature, and an insulating heat-resistant resin (C) Which, at room temperature, is soluble in the first polarsolvent (A1), insoluble in the second polar solvent (A2), and insoluble in the mixed solvent of the firstpolar solvent (A1) and the second polar solvent (A2). ln this description, "room temperature" means 25 °C.[0085] The insulating heat-resistant resin (B) is soluble in the mixed solvent of the first polar solvent(A1) and the second polar solvent (A2) at room temperature, Whereas the insulating heat-resistantresin (C) is insoluble in the mixed solvent of the first polar solvent (A1) and the second polar solvent(A2) at room temperature. As a result, in the insulating resin coating material, the insulating heat-resistant resin (C) is dispersed Within a mixed solvent containing the first polar solvent (Al), thesecond polar solvent (A2) and the insulating heat-resistant resin (B), and functions as a filler.Accordingly, the thixotropic index can be easily adjusted to a value that is suitable for supplying theinsulating resin coating material With a dispensing technique to form the second sealing layer on theupper portion of the Wire. Moreover, by heating the insulating resin coating material to a temperatureat Which the insulating heat-resistant resin (C) also dissolves, thereby eliminating the filler. As aresult, an accurate resolution can be achieved, and the flatness of the surface of the resin film can beimproved.[0086] Examples of the first polar solvent (Al) and the second polar solvent (A2) include: polyether alcohol-based solvents such as diethylene glycol monomethyl ether, diethyleneglycol monoethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether,tetraethylene glycol monomethyl ether and tetraethylene glycol monoethyl ether, ether-based solvents such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether,diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether,triethylene glycol diethyl ether, triethylene glycol dipropyl ether, triethylene glycol dibutyl ether,tetraethylene glycol dimethyl ether, tetraethylene glycol diethyl ether, tetraethylene glycol dipropylether and tetraethylene glycol dibutyl ether, sulfur-containing solvents such as dimethylsulfoxide, diethylsulfoxide, dimethylsulfone and sulfolane, ester-based solvents such as ethyl acetate, butyl acetate, cellosolve acetate, ethyl cellosolveacetate and butyl cellosolve acetate, ketone-based solvents such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanoneand acetophenone, nitrogen-containing solvents such as N-methylpyrrolidone, dimethylacetamide,dimethylformamide, l,3-dimethyl-3,4,5,6-tetrahydro-2(lH)-pyrimidinone and l,3-dimethyl-2-imidazolidinone, aromatic hydrocarbon-based solvents such as toluene and xylene, lactone-based solvents such as y-butyrolactone, y-Valerolactone, y-caprolactone, y-heptalactone, (x-acetyl-y-butyrolactone and a-caprolactone, alcohol-based solvents such as butanol, octyl alcohol, ethylene glycol and glycerol, and phenol-based solvents such as phenol, cresol and xylenol.[0087] The combination of the first polar solvent (A1) and the second polar solvent (A2) may beselected appropriately from among these solvents in accordance With the varieties of the insulatingheat-resistant resin (B) and the insulating heat-resistant resin (C). 88. 88. 88. id="p-88" id="p-88" id="p-88" id="p-88" id="p-88" id="p-88" id="p-88" id="p-88" id="p-88" id="p-88"
[0088] Examples of preferred solvents for the first polar solvent (Al) include: nitrogen-containing solvents such as N-methylpyrrolidone, dimethylacetamide,dimethylforrnamide, l,3-dimethyl-3,4,5,6-tetrahydro-2(lH)-pyrimidinone and l,3-dimethyl-2-imidazolidinone, sulfur-containing solvents such as dimethylsulfoxide, diethylsulfoxide, dimethylsulfone andsulfolane, lactone-based solvents such as y-butyrolactone, y-Valerolactone, y-caprolactone, y-heptalactone, (x-acetyl-y-butyrolactone and a-caprolactone, ketone-based solvents such as methyl ethyl ketone, methyl isobutyl ketone, cyclohexanoneand acetophenone, and alcohol-based solvents such as butanol, octyl alcohol, ethylene glycol and glycerol.
In those cases where each of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) described below is independently at least one resin selected from among apolyamide resin, a polyimide resin, a polyamideimide resin, and precursors to a polyimide resin and apolyamideimide resin, y-butyrolactone is particularly desirable as the first polar solvent (Al).[0089] Examples of preferred solvents for the second polar solvent (A2) include: ether-based solvents such as diethylene glycol dimethyl ether, diethylene glycol diethyl ether,diethylene glycol dipropyl ether, diethylene glycol dibutyl ether, triethylene glycol dimethyl ether,triethylene glycol diethyl ether, triethylene glycol dipropyl ether, triethylene glycol dibutyl ether, 21 tetraethylene glycol dimethyl ether, tetraethylene glycol diethyl ether, tetraethylene glycol dipropylether and tetraethylene glycol dibutyl ether, polyether alcohol-based solvents such as diethylene glycol monomethyl ether, diethyleneglycol monoethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether,tetraethylene glycol monomethyl ether and tetraethylene glycol monoethyl ether, and ester-based solvents such as ethyl acetate, butyl acetate, cellosolve acetate, ethyl cellosolveacetate and butyl cellosolve acetate. ln those cases where each of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) described below is independently at least one resin selected from among apolyamide resin, a polyimide resin, a polyamideimide resin, and precursors to a polyimide resin and apolyamideimide resin, a polyether alcohol-based solvent or an ester-based solvent is preferred as thesecond polar solvent (A2). 90. 90. 90. id="p-90" id="p-90" id="p-90" id="p-90" id="p-90" id="p-90" id="p-90" id="p-90" id="p-90" id="p-90"
[0090] From the viewpoint of improving the handling properties of the insulating resin coatingmaterial, the difference between the boiling point of the first polar solvent (Al) and the boiling pointof the second polar solvent (A2) in the insulating resin coating material is preferably within a rangefrom 10 to l00°C, more preferably from l0°C to 50°C, and even more preferably from l0°C to 30°C.Further, from the viewpoint of lengthening the usable lifetime of the insulating resin coating materialduring application, the boiling points of both the first polar solvent (Al) and the second polar solvent(A2) are preferably at least l00°C, and more preferably l50°C or higher. [009 l ] The insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) are each,independently, preferably at least one resin selected from among a polyamide resin, a polyimide resin,a polyamideimide resin, and precursors to a polyimide resin and a polyamideimide resin. Examples ofthese polyamide resin, polyimide resin, polyamideimide resin, and precursors to polyimide resin andpolyamideimide resin include resins obtained by reaction between an aromatic, aliphatic or alicyclicdiamine compound, and a polyvalent carboxylic acid having 2 to 4 carboxyl groups. The expression"a precursors to polyimide resin and polyamideimide resin" mean a polyamic acid which is asubstance prior to a dehydration cyclization that form a polyimide resin or polyamideimide resin upondehydration cyclization. The insulating heat-resistant resin (C) is, for example, preferably soluble inthe mixed solvent described above upon heating to at least 60°C (and preferably 60 to 200°C, andmore preferably 100 to l80°C). 92. 92. 92. id="p-92" id="p-92" id="p-92" id="p-92" id="p-92" id="p-92" id="p-92" id="p-92" id="p-92" id="p-92"
[0092] Exarnples of the aromatic, aliphatic or alicyclic diamine compound include diaminecompounds having an arylene group, an alkylene group which may have an unsaturated bond, acycloalkylene group which may have an unsaturated bond, or a group having a combination of these groups. These groups may be bonded via a carbon atom, an oxygen atom, a sulfur atom, a silicon 22 atom, or a group containing a combination of these atoms. Further, the hydrogen atom bonded to thecarbon skeleton of the alkylene group may each be substituted with a fluorine atom. From theviewpoints of the heat resistance and mechanical strength, an aromatic diamine is preferred. 93. 93. 93. id="p-93" id="p-93" id="p-93" id="p-93" id="p-93" id="p-93" id="p-93" id="p-93" id="p-93" id="p-93"
[0093] Examples of the polyvalent carboxylic acid having 2 to 4 carboxyl groups include adicarboxylic acid or a reactive acid derivative thereof, a tricarboxylic acid or a reactive acid derivativethereof, and a tetracarboxylic dianhydride. These compounds may be a dicarboxylic acid, atricarboxylic acid or a reactive acid derivative thereof in Which the carboxyl groups are bonded to anaryl group or a cycloalkyl group that may include a crosslinked structure or unsaturated bond withinthe ring, or a tetracarboxylic dianhydride in which the carboxyl groups are bonded to an aryl group ora cycloalkyl group that may include a crosslinked structure or unsaturated bond within the ring, andthe dicarboxylic acid, tricarboxylic acid or reactive acid derivative thereof, and the tetracarboxylicdianhydride may be bonded via a single bond, or a carbon atom, an oxygen atom, a sulfur atom, asilicon atom, or a group containing a combination of these atoms. Furthermore, the hydrogen atombonded to the carbon skeleton of the alkylene group may each be substituted with a fluorine atom.Among these compounds, from the viewpoints of the heat resistance and mechanical strength,tetracarboxylic dianhydrides are preferred. The combination of the aromatic, aliphatic or alicyclicdiamine compound and the polyvalent carboxylic acid having 2 to 4 carboxyl groups may be selectedas appropriate in accordance With the reactivity and the like. 94. 94. 94. id="p-94" id="p-94" id="p-94" id="p-94" id="p-94" id="p-94" id="p-94" id="p-94" id="p-94" id="p-94"
[0094] The reaction may be conducted without using a solvent, or may be conducted in the presenceof an organic solvent. The reaction temperature is preferably from 25 °C to 250°C, and the reactiontime may be selected appropriately in accordance with the batch scale and the reaction conditionsemployed. 95. 95. 95. id="p-95" id="p-95" id="p-95" id="p-95" id="p-95" id="p-95" id="p-95" id="p-95" id="p-95" id="p-95"
[0095] There are also no particular limitations on the method used for subjecting the polyimide resinprecursor or polyamideimide resin precursor to dehydration cyclization to form a polyimide resin orpolyamideimide resin, and typical methods may be used. For example, thermal cyclization methods inwhich the dehydration cyclization is conducted by heating under normal pressure or reduced pressure,or chemical cyclization methods that use a dehydration agent such as acetic anhydride, either in thepresence or absence of a catalyst, may be used. 96. 96. 96. id="p-96" id="p-96" id="p-96" id="p-96" id="p-96" id="p-96" id="p-96" id="p-96" id="p-96" id="p-96"
[0096] ln the case of a heat cyclization method, the cyclization is preferably performed While thewater produced by the dehydration reaction is removed from the system. At this time, the reactionliquid may be heated to a temperature Within a range from 80 to 400°C, and preferably from 100 to250°C. Further, the water may also be removed by azeotropic distillation by using a solvent capable of fonning an azeotrope With water, such as benzene, toluene or xylene. 23 97. 97. 97. id="p-97" id="p-97" id="p-97" id="p-97" id="p-97" id="p-97" id="p-97" id="p-97" id="p-97" id="p-97"
[0097] In the case of a chemical cyclization method, the reaction is performed in the presence of achemical dehydration agent at a temperature of 0 to 120°C, and preferably 10 to 80°C. Examples ofchemical dehydration agents that can be used favorably include acid anhydrides such as aceticanhydride, propionic anhydride, butyric anhydride and benzoic anhydride, and carbodiimidecompounds such as dicyclohexylcarbodiimide. During the reaction, a material that accelerates thecyclization reaction such as pyridine, isoquinoline, trimethylamine, triethylamine, aminopyridine orimidazole is also preferably used in combination with the chemical dehydration agent. The chemicaldehydration agent is used in a ratio of 90 to 600 mol% relative to the total amount of the diaminecompound, and the material that accelerates the cyclization reaction is used in a ratio of 40 to 300mol% relative to the total amount of the diamine compound. Further, a dehydration catalyst, includingphosphorus compounds such as triphenyl phosphite, tricyclohexyl phosphite, triphenyl phosphate,phosphoric acid and phosphorus pentoxide, and boron compounds such as boric acid and boricanhydride, may also be used. 98. 98. 98. id="p-98" id="p-98" id="p-98" id="p-98" id="p-98" id="p-98" id="p-98" id="p-98" id="p-98" id="p-98"
[0098] By pouring the reaction liquid obtained following completion of the imidization bydehydration into a large excess of a solvent that exhibits compatibility with the aforementioned firstpolar solvent (Al) and the second polar solvent (A2) and also acts as a poor solvent relative to theinsulating heat-resistant resins (B) and (C), such as a lower alcohol like methanol, water, or a mixturethereof, thus obtaining a precipitate of the resin, and then filtering the precipitate and drying thesolvent. From the viewpoint of reducing residual ionic impurities, a therrnal cyclization method ispreferred. 99. 99. 99. id="p-99" id="p-99" id="p-99" id="p-99" id="p-99" id="p-99" id="p-99" id="p-99" id="p-99" id="p-99"
[0099] The types of preferred first polar solvents (Al) and second polar solvents (A2) may bedeterrnined in accordance with the types of the insulating heat-resistant resin (B) and insulating heat-resistant resin (C). Examples of preferred combinations (mixed solvents) of the first polar solvent(Al) and the second polar solvent (A2) include the two types (a) and (b) described below. [0 l 00] (a) A combination of the first polar solvent (Al): an aforementioned nitrogen-containingsolvent such as N-methylpyrrolidone or dimethylacetarnide; an aforementioned sulfur-containingsolvent such as dimethylsulfoxide; an aforementioned lactone-based solvent such as y-butyrolactone;or an aforementioned phenol-based solvent such as xylenol, and the second polar solvent (A2): an aforementioned ether-based solvent such as diethyleneglycol dimethyl ether; an aforementioned ketone-based solvent such as cyclohexanone; anaforementioned ester-based solvent such as butyl cellosolve acetate; an aforementioned alcohol-based solvent such as butanol; or an aforementioned aromatic hydrocarbon-based solvent such as xylene. 24 (b) A combination of the first polar solvent (A1): an aforementioned ether-based solvent suchas tetraethylene glycol dimethyl ether; or an aforementioned ketone-based solvent such ascyclohexanone, and the second polar solvent (A2): an aforementioned ester-based solvent such as butyl cellosolveacetate or ethyl acetate; an aforementioned alcohol-based solvent such as butanol; an aforementionedpolyether alcohol-based solvent such as diethylene glycol monoethyl ether; or an aforementionedaromatic hydrocarbon-based solvent such as xylene. [0 1 0 1 ] Examples of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C)that may be used with the type (a) mixed solvent include the resins described below. Examples of theinsulating heat-resistant resin (B) include resins having structural units represented by formulas (1) to(10) shown below. [0 l 02] CC) X f" In formula (1), X represents -CH2-, -O-, -C0-, -SO2-, or a group represented by any offormulas (a) to (i) shown below, and in formula (i), p represents an integer of 1 to 100.[0103] CH\ | 3 \........Û....š_. çï øm... (a)f' CHS f'K\ S* \---c»--'» --c';--'- mo»- w)k) I ' /j oFa----C> O"- (e)ïlïHswfiï" (CDoma*wctï- (a)ma,(\wo» m an CHB CH; m-šsa-»fo-si - u)I i s>CHS oHä In formula (2), RI and Rz each represent a hydrogen atom or a hydrocarbon group of 1 to 6 carbon atoms, and may be the same or different. X has the same meaning as X in formula (1). 105. 105. 105. id="p-105" id="p-105" id="p-105" id="p-105" id="p-105" id="p-105" id="p-105" id="p-105" id="p-105" id="p-105"
[0105] ägg; .ff/ *wo _ * CC* V V In fonnula (3), M is a group represented by formula (c), (h), (i) or (j) shown below, and informula (i), p represents an integer of 1 to 100. 106. 106. 106. id="p-106" id="p-106" id="p-106" id="p-106" id="p-106" id="p-106" id="p-106" id="p-106" id="p-106" id="p-106"
[0106] *** O» (c)"x w *z-*ißWS: omsršf] n;1 1 ßCH3 CHgeg-O~É-O-~ u)C133[0107]jiiqjmfiíifß [Û CGM R/\ X 'KN ] wi 1har: (f i Û; kf) '\f iCF-g, In formula (4), X has the same meaning as X in fonnu1a(1). 108. 108. 108. id="p-108" id="p-108" id="p-108" id="p-108" id="p-108" id="p-108" id="p-108" id="p-108" id="p-108" id="p-108"
[0108] In formula (5), X has the same meaning as X in forrnu1a(1).[0109] 27 Nfüc F? CQN üåtwš-KN »(6)ägg; ílššmømåš i CC: w k.) iRÅÅ Rá In forrnula (6), R3 and R4 each represent a rnethyl group, ethyl group, propyl group or phenylgroup, and may be the same or different. X has the sarne meaning as X in forrnula (1). 110. 110. 110. id="p-110" id="p-110" id="p-110" id="p-110" id="p-110" id="p-110" id="p-110" id="p-110" id="p-110" id="p-110"
[0110] 1»«<::QÛ:::~GÛÛ,, 111. 111. 111. id="p-111" id="p-111" id="p-111" id="p-111" id="p-111" id="p-111" id="p-111" id="p-111" id="p-111" id="p-111"
[0111] 1% »s *Go g sax. Gif-f k? »ß In forrnula (8), X1 represents 0 or 2, and X has the same meaning as X in formula (1).[01 12] _,co a i coxtr d, Q Q t)co m, co 113. 113. 113. id="p-113" id="p-113" id="p-113" id="p-113" id="p-113" id="p-113" id="p-113" id="p-113" id="p-113" id="p-113"
[0113] C CO .f11 o C C gg 'H31: "C143 114. 114. 114. id="p-114" id="p-114" id="p-114" id="p-114" id="p-114" id="p-114" id="p-114" id="p-114" id="p-114" id="p-114"
[0114] Examples of the insulating heat-resistant resin (C) include resins having structural unitsrepresented by fonnulas (11) to (20) shown below.[01 1 5] In fonnula (11), Y is a group represented by forrnula (a), (c) or (h) shown below.[01 16] In fonnula (12), Y has the same meaning as Y in forrnula (11). The portions indicated by *are bonded together (this convention also applies be1ow).[01 1 8] _,c:o CoxNïïø p Cüfm o (13) 119. 119. 119. id="p-119" id="p-119" id="p-119" id="p-119" id="p-119" id="p-119" id="p-119" id="p-119" id="p-119" id="p-119"
[0119] 1111/30 CQW-fšlf-*Zfi (14)*oo í oo" k) ky In forrnula (14), Z represents -CH2-, -O-, -CO-, -SO2-, or a group represented by forrnula (a)or (d) shown below.[0120] o o (a)ÅHV 121. 121. 121. id="p-121" id="p-121" id="p-121" id="p-121" id="p-121" id="p-121" id="p-121" id="p-121" id="p-121" id="p-121"
[0121] ,.co Cox e H?K CHQc: i Coxom 122. 122. 122. id="p-122" id="p-122" id="p-122" id="p-122" id="p-122" id="p-122" id="p-122" id="p-122" id="p-122" id="p-122"
[0122] 1N<ÉÉÜÉÉ>NÛ~ZÛ In forrnula (16), Z has the same meaning as Z in forrnula (14).[0123] Ä tix I g 1G0 0 L; 0 i e* :I(3 124. 124. 124. id="p-124" id="p-124" id="p-124" id="p-124" id="p-124" id="p-124" id="p-124" id="p-124" id="p-124" id="p-124"
[0124] (017) 125. 125. 125. id="p-125" id="p-125" id="p-125" id="p-125" id="p-125" id="p-125" id="p-125" id="p-125" id="p-125" id="p-125"
[0125] _ CO m 0 n weøßw ' \co 01-1200 126. 126. 126. id="p-126" id="p-126" id="p-126" id="p-126" id="p-126" id="p-126" id="p-126" id="p-126" id="p-126" id="p-126"
[0126] 3, Q , \[©0100] In formula (20), X has the same meaning as X in formula (1), and each of n and mindependently represents an integer of 1 or greater. The ratio (n/m) between n and m is preferablywithin a range from 80/20 to 30/70, and more preferably from 70/30 to 50/50. [0 1 27] Among the various combinations described above, using a lactone-based solvent or nitrogen-containing solvent as the first polar solvent (A1), and an ether-based solvent or ester-based solvent asthe second polar solvent (A2), and using a resin represented by formula (1) as the insulating heat-resistant resin (B), and a resin having a structural unit represented by formula (20) or formula (16) asthe insulating heat-resistant resin (C) is preferred. [0 1 28]Examples of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) that may be used with the type (b) mixed solvent include the resins described below.
Examples of the insulating heat-resistant resin (B) include resins having structural unitsrepresented by formulas (21) and (22) shown below, and polysiloxaneirnides having structural unitsrepresented by forrnula (6) shown above.
In fonnula (22), Zl represents -0-, -CO-, or a group represented by any of forrnulas (d), (e),(k) and (l) shown below. RS and Rá each represent a group represented by forrnula (rn) or (n) shownbelow, and may be the same or different. Further, p represents an integer of 1 to 100. 131. 131. 131. id="p-131" id="p-131" id="p-131" id="p-131" id="p-131" id="p-131" id="p-131" id="p-131" id="p-131" id="p-131"
[0131] Examples of the insulating heat-resistant resin (C) include polyetheramideimides having astructural unit in which X in the above formula (1) is a group represented by formula (a), (b) or (i)shown below, and the polyimides represented by formulas (5) to (9) shown above (but excluding those cases where X in formulas (5), (6) and (8) is a group represented by formula (a) shown below). 135. 135. 135. id="p-135" id="p-135" id="p-135" id="p-135" id="p-135" id="p-135" id="p-135" id="p-135" id="p-135" id="p-135"
[0135]ta tas; (o s; ) (ä)l l pCHQ, CHÉ,In formula (i), p represents an integer of 1 to 100.[0136] There are no particular limitations on the order of addition of the raw materials whenpreparing the insulating resin coating material. For example, the above raw materials for theinsulating resin coating material may all be mixed together simultaneously, or the first polar solvent(A1) and the second polar solvent (A2) may first be mixed, the insulating heat-resistant resin (B) thenmixed with the mixed solvent, and the insulating heat-resistant resin (C) then added to the mixedsolution of the first polar solvent (Al), the second polar solvent (A2) and the insulating heat-resistant resin (B). [0 1 3 7] It is preferable that the raw material mixture for the insulating resin coating material is heatedto a temperature at which the insulating heat-resistant resin (C) dissolves satisfactorily in the mixedsolution of the first polar solvent (A1), the second polar solvent (A2) and the insulating heat-resistantresin (B), and is mixed thoroughly under stirring or the like. [0 1 3 8] At room temperature, the insulating resin coating material obtained in the manner describedabove has the insulating heat-resistant resin (C) dispersed in a solution containing the first polarsolvent (A1), the second polar solvent (A2) and the insulating heat-resistant resin (B). ln other words,the insulating heat-resistant resin (C) exists as a filler in the insulating resin coating material, and canimpart a suitable level of thixotropy to the insulating resin coating material during supply of thecoating material to the upper portion of the wire. [0 1 3 9] The insulating heat-resistant resin (C) dispersed within the insulating resin coating materialmay exist in particulate form with an average particle size of not more than 50 um, preferably from0.01 to 10 um, and more preferably from 0.1 to 5 um. Further, the maximum particle size ispreferably 10 um, and more preferably 5 um. The average particle size and maximum particle size ofthe insulating heat-resistant resin (C) can be measured using a particle size distribution analyze SALD-2200 manufactured by Shimadzu Corporation. [0 140] The mixing ratio between the first polar solvent (Al) and the second polar solvent (A2) variesdepending on the types of insulating heat-resistant resin (B) and insulating heat-resistant resin (C)used, the solubility of these resins in the first polar solvent (A1) and the second polar solvent (A2), andthe amounts used of the resins, but from the viewpoint of maintaining a superior balance between thefluidity of the insulating resin coating material, the resolution of the resin film, the shape retention andthe flatness of the surface, the mixing ratio (Al :A2) is typically within a range from 6:4 to 9: 1, and ispreferably from 6.5:3.5 to 8.5: 1.5, and particularly preferably from 7:3 to 8:2. [0 14 1 ] In the insulating resin coating material, the mixed solvent of the first polar solvent (A1) andthe second polar solvent (A2) is added in an amount that is preferably within a range from 100 to3,500 parts by mass, and more preferably from 150 to 1,000 parts by mass, per 100 parts by mass ofthe total resin mass of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C).[0 142] The mixing ratio between the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C) is not particularly limited, and the blend amounts may be set as desired, but theinsulating heat-resistant resin (C) is preferably added in an amount of 10 to 300 parts by mass, and more preferably an amount of 10 to 200 parts by mass, per 100 parts by mass of the total amount of the insulating heat-resistant resin (B). If the amount used of the insulating heat-resistant resin (C) isless than 10 parts by mass, then the thixotropy properties of the obtained heat-resistant insulating resincoating material tend to deteriorate, whereas if the amount exceeds 300 parts by mass, then thephysical properties of the obtained resin f1lm tend to deteriorate. [0 143] From the viewpoint of shape retention, the insulating resin coating material has a viscosity at25°C that is within a range from 30 to 500 Pa-s, preferably from 50 to 400 Pa-s, and more preferablyfrom 70 to 300 Pa-s. lf the viscosity at 25°C is 30 Pa-s or less, then shape retention during printingtends to become problematic. Further, if the viscosity is 500 Pa-s or greater, then the Workabilitytends to be more likely to deteriorate. The viscosity can be controlled by adjusting the non-volatilefraction concentration (hereafter abbreviated as NV) of the insulating resin coating material, oradjusting the molecular weight of the first polar solvent (A1), the insulating heat-resistant resin (B) orthe insulating heat-resistant resin (C). For example, the molecular weights of the insulating heat-resistant resin (B) and the insulating heat-resistant resin (C), measured as a standard polystyrene-equivalent Weight average molecular Weight using gel perrneation chromatography, are typicallyadjusted to values within a range from 10,000 to l00,000, preferably from 20,000 to 80,000, andparticularly preferably from 30,000 to 60,000. [0 144] The insulating resin coating material has a thixotropic index that is typically within a rangefrom 2.0 to 10.0, preferably from 2.0 to 6.0, more preferably from 2.5 to 5.5, and even more preferablyfrom 3.0 to 5.0. lf the thixotropic index is less than 2.0, then the printability deteriorates, whereas ifthe thixotropic index exceeds 6.0, then the Workability deteriorates and producing the insulating resincoating material becomes difficult. [0 145]5. Resin Sealing Member The resin sealing member is provided so as to cover at least the aforementioned secondsealing layer. The resin sealing member is preferably provided across the entire surface of thesubstrate so as to cover the semiconductor element and the upper surface of the second sealing layer.Because the wire has already been sealed, the occurrence of problems such as wire flow need not beconsidered during formation of the resin sealing member. The resin sealing member is not particularlylimited, and may be formed using the types of materials known in the technical field. [0 146] Examples of the material used for forming the resin sealing member include a curablecomposition containing an epoxy resin and a phenol resin. The phenol resin is used as a curing agentfor the epoxy resin.
Specific examples of the epoxy resin include a biphenyl epoxy resin, a bisphenol (such as bisphenol F and bisphenol A) epoxy resin, a triphenylmethane epoxy resin, an ortho-cresol novolac epoxy resin, and a naphthalene epoxy resin. Further, specific examples of the phenol resin include atriphenylmethane phenol resin, a phenol aralkyl phenol resin, a xyloc phenol resin, a copolymerphenol aralkyl phenol resin, a naphthol aralkyl phenol resin, and a biphenylene aralkyl phenol resin.For both types of resin, a single resin may be used alone, or a combination of two or more resins maybe used. [0 147] FIG. 3 is a series of schematic cross-sectional views describing a method for producing asemiconductor device, wherein (a) to (d) correspond to each of the steps. In one embodiment, theproduction method includes at least steps (a) to (c) described below, and preferably also includes step(d)- [0 148] Step (a): As illustrated in FIG. 3(a), the substrate l and the semiconductor element 2 disposedon top of the substrate l are electrically connected by the wire 3. The term "electrically connected"usually means that an electrode (not shown in the drawings) is provided on each of the substrate l andthe semiconductor element 2, and these electrodes are connected using a wire. Connection of the wirecan be achieved using a wire bonding device. In one embodiment, the height from the surface of thesubstrate to the apex 3a of the wire (indicated by the reference sign "h" in the drawing) may be from0.5 to l.5 mm. For example, the height is preferably about l mm. Further, the wire diameter, in thecase of a gold wire, may be within a range from l0 um to 30 um. In those cases where an aluminumwire is used in a power Semiconductor application, the wire diameter of the aluminum wire may bewithin a range from 80 to 600 um, and the height h also tends to increase compared with the case of agold wire. [0 149] Step (b): As illustrated in FIG. 3(b), a liquid sealing material is supplied to the space beneaththe apex 3a of the wire. There are no particular limitations on the method used for supplying theliquid sealing material, and a dispenser method, injection method, or printing method or the like maybe used. In one embodiment, a dispenser method is preferably employed. Among the variouspossibilities, a method in which a j et dispenser device is used to inject the liquid sealing material fromthe side of the wire is preferred. By using a jet dispenser device to inject the liquid sealing materialinto the space beneath the wire, the space can easily be filled without voids. By subsequently curingthe liquid sealing material supplied to the space, the first sealing layer 4a can be formed. Curing of theliquid sealing material may be conducted prior to supply of the insulating resin coating materialdescribed in the subsequent step (c), or may be conducted after supply of the insulating resin coatingmaterial. For example, in those cases where the liquid sealing material is a thermosetting resin, theliquid sealing material is preferably cured by heating following injection of the liquid sealing material into the space. The temperature during this heated curing may be adjusted appropriately depending on the type of liquid sealing material being used, but a typical temperature is preferably within a rangefrom 100 to 200°C.[0 l 50] Step (c): As illustrated in FIG. 3(c), an insulating resin coating material is supplied onto thetop of the first sealing layer 4a with the wire 3 interposed therebetween. In those cases where curingof the liquid sealing material is not conducted during step (b), the insulating resin coating material issupplied onto the top of the liquid sealing material that has been supplied into the aforementionedspace. There are no particular limitations on the method used for supplying the insulating resincoating material, and a dispenser method or an injection method or the like may be used. In oneembodiment, a dispenser method is preferably employed. The insulating resin coating material ispreferably supplied on top of the first sealing layer formed from the cured product of the liquid sealingmaterial. By performing step (c) following step (b), the insulating resin coating material can beretained on top of the wire without the occurrence of problems such as liquid flow, and subsequentdrying enables the second sealing layer to be formed easily.
In one embodiment, from the viewpoint of ensuring satisfactory insulation properties, thethickness of the second sealing layer is preferably at least 5 um, more preferably at least 8 um, andeven more preferably 10 um or greater. On the other hand, from the viewpoint of reducing thickness,the above thickness is preferably not more than l00 um, more preferably not more than 50 um, andeven more preferably 30 um or less. In one embodiment, the above thickness is preferably within arange from l0 to 30 um. Accordingly, the amount of the insulating resin coating material supplied ispreferably adjusted so that the thickness following drying falls within the above range. [01 5 l] Step (d): As illustrated in FIG. 3(d), a resin sealing member is formed so as to cover at leastthe second sealing layer 4b. The resin sealing member is preferably formed so as to cover the entiresurface of the semiconductor element and the substrate, including the second sealing layer 4b. In theproduction method of this embodiment, because the wire is sealed prior to the formation of the resinsealing member, problems such as wire flow do not occur. There are no particular limitations on thetechnique used for forming the resin sealing member, and techniques known in the technical field maybe used.
In one embodiment, formation of the resin sealing member can be conducted by performingtransfer molding in a mold having the desired shape using a curable composition containing the epoxyresin and phenol resin described above. Further, there are no particular limitations on the thickness ofthe resin sealing member, and because the insulation properties can be ensured by the second sealinglayer, the resin sealing member may have a thin design. ln one embodiment, the thickness of thesemiconductor device obtained following formation of the resin sealing member is preferably notmore than 1.5 mm, and more preferably l.l mm or less. 152. 152. 152. id="p-152" id="p-152" id="p-152" id="p-152" id="p-152" id="p-152" id="p-152" id="p-152" id="p-152" id="p-152"
[0152] In one embodiment, the method for producing a semiconductor device has a step ofelectrically connecting a substrate and a semiconductor element disposed on the substrate using a wire,a step of forming a first sealing layer by supplying a liquid sealing material to the space below theapex of the wire and then curing the liquid sealing material, and a step of forming a second sealinglayer by supplying an insulating resin coating material to the top of the first sealing layer through thewire and then performing drying. In another embodiment, the method for producing a semiconductordevice also includes, following the step of forming the second sealing layer in the production methodof the above embodiment, a step of forming a resin sealing member that covers at least the second sealing layer.
EXAMPLES[0 l 5 3] Embodiments of the present invention are described below using a series of examples, but thepresent invention is in no way limited by the following examples, and of course also includesembodiments having various modifications. [0 l 5 4]l. Preparation of Liquid Scaling Material(Preparation Example l) The materials shown below were blended together, and then kneaded and dispersed using atriple roll mill and a vacuum Raikai mixer to prepare a liquid sealing material.
Epoxy resin l: p-(2,3-epoxypropoxy)-N,N-bis(2,3-expoxypropyl)aniline (product name: EP-39505, manufactured by ADEKA Corporation, total chlorine content: not more than 1,500 ppm) 60parts Epoxy resin 2: a bisphenol F epoxy resin (product name: YDF-8 l 70C, manufactured byNIPPON STEEL Chemical & Material Co., Ltd.) 20 parts Epoxy resin 3: l,6-hexanediol diglycidyl ether (product name: SR-l6HL, manufactured bySakamoto Yakuhin Kogyo Co., Ltd.) 20 parts Curing agent: diethyltoluenediamine (product name: jER Cure W, manufactured byMitsubishi Chemical Corporation) 42 parts Ion trapping agent: a bismuth-based ion trapping agent (product name: IXE-SOO,manufactured by Toagosei Co., Ltd.) 3 parts Solvent: butyl carbitol acetate 57 parts Inorganic filler l: a spherical fused silica surface-treated with a silane coupling agent (productname: SE5050-SEJ, manufactured by Admatechs Co., Ltd., volume average particle size: l.5 um)707 parts Inorganic filler 2: a spherical fused silica surface-treated with a silane coupling agent (productname: SE2050-SEJ, manufactured by Admatechs Co., Ltd., volume average particle size: 0.5 um)235 parts[0 1 5 5 ] For the liquid sealing material prepared in the manner described above, the viscosity at 25 °Cand a shear velocity of l0 s* and the viscosity at 75°C and a shear velocity of 5 s* were measured.Further, the viscosity at 75°C and a shear velocity of 50 s* was also measured, and the thixotropicindex at 75°C was deterrnined. The results of these measurements are shown below.
°C viscosity: 20 (Pa-s) (shear velocity: 10 s*) 75°C viscosity: 2.0 (Pa-s) (shear velocity: 5 s*) Thixotropic index at 75°C: 1.7 (ratio of viscosities at shear velocities 5 s*/50 s*) Measurement of the viscosity at 25°C was performed using an E-type viscometer (VISCONICEHD, manufactured by Tokyo Keiki lnc.). Further, measurement of the viscosity at 75°C wasperformed using a rheometer (product name: AR2000, manufactured by TA Instruments, lnc.). [0 1 5 6] Further, the chlorine ion content (ppm) of the prepared liquid sealing material was measured.The measurement was performed by conducting a treatment by ion chromatography at l2l°C for 20hours using sodium carbonate as the eluent. The result of the measurement revealed a chlorine ioncontent in the liquid sealing material of l0 ppm. [0 l 57] 2. Preparation of lnsulating Resin Coating Material(Preparation 2) (l) Synthesis Example for Heat-Resistant Resin (B) A 5 -liter four-neck flask fitted with a thermometer, a stirrer, a nitrogen inlet tube and acondenser fitted with an oil-water separator was charged, under a stream of nitrogen, with 650.90 g(l .59 mol) of 2,2-bis[4-(4-aminophenoxy)phenyl]propane (hereafter abbreviated as BAPP) and 43.80g (0.l8 mol) of 1,3-bis(3 -aminopropyl)-tetramethyldisiloxane (hereafter abbreviated as BYl6-87l(manufactured by Dow Corning Toray Co., Ltd.)), and these components were then dissolved byadding 3,609.86 g of N-methyl-2-pyrrolidone (hereafter abbreviated as NMP). Subsequently, 384.36g (l .83 mol) of trimellitic anhydride chloride (TAC) was added while the flask was cooled to ensurethat the temperature of the solution did not exceed 20°C.
After stirring for one hour at room temperature, 215.90 g (2.l4 mol) of triethylamine(hereafter abbreviated as TEA) was added while the flask was cooled to ensure that the temperaturedid not exceed 20°C, and the reaction was then allowed to proceed for one hour at room temperature,thus producing a polyamic acid varnish. The obtained polyamic acid varnish was then subjected to a dehydration reaction at l80°C over a period of 6 hours, thus producing a varnish of a polyamideimide resin. This polyamideimide resin vamish was poured into water, and the resulting precipitate wasseparated, ground, and dried to obtain a polyamideimide resin powder (PAI-1). The Mw value of thethus obtained polyamideimide resin (PAI-1) was 77,000. [0 1 5 8] (2) Synthesis Example for Heat-Resistant Resin (C) A 1-liter four-neck flask fitted with a therrnometer, a stirrer, a nitrogen inlet tube and acondenser fitted with an oil-water separator was charged, under a stream of nitrogen, with 69.72 g(l70.1 mmol) of BAPP and 4.69 g (18.9 mmol) of BY16-871, and these components were thendissolved by adding 693.52 g ofNMP. Subsequently, 25.05 g (119.0 mmol) of TAC and 25.47 g(79.1 mmol) of 3,4,3',4'-benzophenonetetracarboxylic dianhydride (hereafter abbreviated as BTDA)were added while the flask was cooled to ensure that the temperature did not exceed 20°C.
After stirring for one hour at room temperature, 14.42 g (l42.8 mmol) of TEA was addedwhile the flask was cooled to ensure that the temperature did not exceed 20°C, and the reaction wasthen allowed to proceed for one hour at room temperature, thus producing a polyamic acid vamish.The obtained polyamic acid vamish was then subj ected to a dehydration reaction at 180°C over aperiod of 6 hours, thus producing a vamish of a polyimide resin. This polyimide resin vamish waspoured into water, and the resulting precipitate was separated, ground, and dried to obtain a polyimideresin powder (PAIF-1). The Mw value of the thus obtained polyimide resin (PAIF-l) was 42,000. [0 1 59](3) Preparation of Insulating Resin Coating Material A 0.5-liter four-neck flask fitted with a thermometer, a stirrer, a nitrogen inlet tube and acondenser was charged, under a stream of nitrogen, with 92.4 g of y-butyrolactone (hereafterabbreviated as y-BL) as the first polar solvent (Al), 39.6 g of triethylene glycol dimethyl ether(hereafter abbreviated as DMTG) as the second polar solvent (A2), 30.8 g of the previouslysynthesized polyamideimide resin powder (PAI-1) as the heat-resistant resin (B) and 13.2 g of thepreviously synthesized polyimide resin powder (PAIF-1) as the heat-resistant resin (C), and thetemperature was raised to 180°C while the mixture was stirred. After stirring at 180°C for two hours,the heating was stopped, the reaction mixture was allowed to cool under stirring, when the temperaturereached 60°C, 16.8 g of y-BL and 7.2 g of DMTG were added, stirring was continued for a further onehour, and the reaction mixture was then cooled, yielding a yellow composition. The composition wasplaced in a frltration device KST-47 (manufactured by Adrnatechs Co., Ltd), and a silicone rubberpiston was inserted to perform pressurized frltration under a pressure of 3.0 kg/cmz, thus obtaining aninsulating resin coating material (P-1). [0 1 60](Preparation Example 3) Following preparation of PAI-1 in the same manner as Preparation Example 2(1), 5 wt% ofAEROSIL 200 manufactured by Nippon Aerosil Co., Ltd. was added to prepare an insulating resincoating material of a comparative example.
Specifically, a 0.5-liter four-neck flask fitted with a therinometer, a stirrer, a nitrogen inlettube and a condenser Was charged, under a stream of nitrogen, with 92.4 g of y-BL as the first polarsolvent (A1), 39.6 g of triethylene glycol dimethyl ether (hereafter abbreviated as DMTG) as thesecond polar solvent (A2), 30.8 g of the previously synthesized polyamideimide resin powder (PAI-1)as the heat-resistant resin (B) and 9.8 g of AEROSIL 200, and the temperature was raised to l80°Cwhile the mixture was stirred. After stirring at 180°C for two hours, the heating was stopped, thereaction mixture was allowed to cool under stirring, when the temperature reached 60°C, 16.8 g of y-BL and 7.2 g of DMTG were added, stirring was continued for a further one hour, and the reactionmixture was then cooled, yielding a yellow composition. The composition was placed in a filtrationdevice KST-47 (manufactured by Admatechs Co., Ltd), and a silicone rubber piston was inserted toperform pressurized filtration under a pressure of 3.0 kg/cmz, thus obtaining an insulating resin coatingmaterial (P-2) of a comparative example. [0 1 6 1 ]3. Production of Semiconductor Devices(Example 1) A semiconductor element was mounted on a glass epoxy substrate using solder, and astructure was prepared in which the semiconductor element mounted on the substrate and the substratewere electrically connected by gold wires. Twenty gold bonding wires were formed on each of thefour sides of the semiconductor element (giving a total of 80 wires). The height from the substrate tothe wire apexes was 0.9 mm.
Subsequently, a jet dispenser device (device name: S2-910, manufactured by NordsonAdvanced Technology K.K.) was used to supply the liquid sealing material obtained in PreparationExample 1 to the space beneath the apexes of the wires in the structure described above. The suppliedliquid sealing material was then cured by heating at 175 °C for two hours, thus forining a first sealinglayer (wire sealing layer).
A dispenser device (device name: SDP500, manufactured by Saneitec Co., Ltd.) was thenused to supply the insulating resin coating material obtained in Preparation Example 2 onto the top ofthe first sealing layer with the wires interposed therebetween. Subsequently, the coating film of thecoating material was dried by heating under temperature conditions of l00°C for 30 minutes and then200°C for one hour, thus forming a second sealing layer (insulating protective layer) with a thicknessof 12 um. [0 1 62](Comparative Example 1) A structure having a semiconductor element mounted on a substrate wherein thesemiconductor element and the substrate were electrically connected by Wires was prepared, in thesame manner as Example 1. Subsequently, a dispenser device (device name: SDP500, manufacturedby Saneitec Co., Ltd.) was used to supply the insulating resin coating material obtained in PreparationExample 2 onto only the top of the Wires in the structure. The space beneath the Wires was obstructedby the Wires, and was unable to be satisfactorily filled with the insulating resin coating material. Thecoating film Was then dried by heating under temperature conditions of l00°C for 30 minutes and then200°C for one hour, thus forming a sealing layer (insulating protective layer). The amount supplied ofthe insulating resin coating material was adjusted so as to achieve a dried film thickness of the sealinglayer above the Wires of 12 um, the same as Example 1. [0 1 63](Comparative Example 2) A structure having a semiconductor element mounted on a substrate wherein thesemiconductor element and the substrate were electrically connected by Wires was prepared, in thesame manner as Example 1. Subsequently, a jet dispenser device (device name: S2-910, manufacturedby Nordson Advanced Technology K.K.) was used to supply the liquid sealing material obtained inPreparation Example l to both the space beneath the Wires and the region above the Wires in thestructure. The coating film Was then cured by heating under temperature conditions of 175 °C for twohours, thus forrning a sealing layer (Wire sealing layer). The amount supplied of the liquid sealingmaterial was adjusted so as to achieve a film thickness of the sealing layer positioned above the Wiresof 12 um, the same as Example l. [0 l 64](Comparative Example 3) A structure having a semiconductor element mounted on a substrate wherein thesemiconductor element and the substrate were electrically connected by Wires was prepared, in thesame manner as Example 1. Subsequently, a first sealing layer was formed beneath the Wires in thestructure in the same manner as Example l, and the inorganic filler-containing insulating resin coatingmaterial obtained in Preparation Example 3 was then supplied onto the top of the first sealing layerwith the Wires interposed therebetween. The amount supplied of the inorganic filler-containinginsulating resin coating material was adjusted so as to achieve a dried film thickness of the sealinglayer above the Wires of 12 um, the same as Example 1. [0 l 65]4. Evaluation of Semiconductor Devices For each of the semiconductor devices obtained in Example 1 and Comparative Examples 1 to3, the reliability of the device Was evaluated by ascertaining the presence or absence of voids in the sealing layers on the Wires using ultrasonic microscope measurements.
The ultrasonic microscope measurements were conducted using an apparatus D9000manufactured by SONOSCAN, Inc. In those cases where the existence of voids in the semiconductordevice could not be detected by the ultrasonic microscope measurements, the reliability was judged tobe good. In contrast, when the ultrasonic microscope measurements confirrned the existence of voids,the reliability was judged to be poor. The results are shown in Table 1. [0 l 66] For each of the semiconductor devices obtained in Example l and Comparative Examples 1 to3, a measurement sample was prepared in the manner described below to enable evaluation of thedielectric breakdown voltage of the sealing layer formed on the upper portion of the wires.
A measurement sample l corresponding with Example 1 (Comparative Example 1) wasprepared by first using an applicator to apply the insulating resin coating material P-1 obtained inPreparation Example 2 to an aluminum substrate. Heating was then conducted in an oven at l00°C for30 minutes and then at 200°C for one hour, thus obtaining a dried coating film with a thickness of 10um.
A measurement sample 2 corresponding with Comparative Example 2 was prepared by firstusing an applicator to apply the liquid sealing material obtained in Preparation Example l to analuminum substrate. The coating film was then cured by heating at 175 °C for two hours, thusobtaining a cured film with a thickness of l0 um.
A measurement sample 3 corresponding with Comparative Example 3 was prepared by firstusing an applicator to apply the inorganic filler-containing insulating resin coating material P-2obtained in Preparation Example 3 to an aluminum substrate. Heating was then conducted in an ovenat l00°C for 30 minutes and then at 200°C for one hour, thus obtaining a dried coating film with athickness of l0 um.
The measurement samples l to 3 produced in the manner described above were eachsandwiched between a pair of electrodes, and the dielectric breakdown voltage was measured. Themeasurement was performed in oil, with reference to J IS C21 10, under conditions including a rate ofvoltage increase of 0.5 kV/second, a measurement temperature of room temperature, and an electrodeshape composed of ø20 mm spheres. The results are shown in Table l. [0 l 67] For each of the semiconductor devices obtained in Example l and Comparative Examples l to3, rather than actually measuring the ESD resistance, the ESD resistance was evaluated from the valueof the dielectric breakdown voltage for a separately measured dried coating film (cured film). Forexample, the dielectric breakdown voltage of the measurement sample l prepared above was 230kV/mm, which is the same as 230 V/ um. Accordingly, if the film thickness of the sealing layer (film) obtained upon film forrnation is 10 um, this is equivalent to the sealing layer (film) having an insulation of 2,300 V (2.3 kV). Usually, if a sealing layer (film) is able to maintain insulation relativeto a voltage exceeding 2 kV, then sufficient ESD resistance can be obtained for the semiconductordevice.
Generally, increasing the film thickness enhances the insulation properties, enabling the ESDresistance to be improved. For example, in those cases where a material is applied in sufficientamount to obtain a f1lm thickness of at least 100 um, ensuring favorable insulation properties is easy.However, achieving uniform application of a sufficient amount of the insulating resin coating materialto obtain a film thickness of at least 100 um is difficult. Further, this is also undesirable in terms ofgoing against the current market trend demanding thinner semiconductor devices. Accordingly, asdescribed below, 2 kV was used as a benchmark value, and the insulation of each of the measurementsamples 1 to 3 With a thickness of 10 um, calculated from the measured value for the dielectricbreakdown voltage in each case, Was used to evaluate the ESD resistance. The results are shown inTable 1.
(ESD Evaluation Criteria)Good: insulation of at least 2 kV Poor: insulation of less than 2 kV [0 1 68][Table 1]_ _ _ _ _ Dielectric breakdown _Semiconductor dev1ce rel1ab1l1ty ESD resistanceItem _ _ voltage _ _(existence of voids) (insulation)(kV/mm)GoodExample 1 Good 230(2.3 kV)Comparative GoodPoor 230Example 1 (2.3 kV)Comparative PoorGood 12Example 2 (0.12 kV)Comparative PoorGood 1 5Example 3 (0.15 kV)(Notes) The dielectric breakdown voltage and the ESD resistance for Example 1 and ComparativeExample 1 correspond with the measured value and the evaluation result respectively for themeasurement sample 1. The dielectric breakdown voltage and the ESD resistance evaluations forComparative Examples 2 and 3 correspond with the measured values and evaluation results for themeasurement samples 2 and 3 respectively.
The insulation values recorded for the ESD resistance represent values calculated from themeasured values for the dielectric breakdown voltage for the measurement samples 1 to 3 having a film thickness 10 um. [0 1 69] As is evident from a comparison of Example 1 and Comparative Examples 1 to 3, theembodiment of the present invention (Example 1) was able to suppress the formation of voids, andalso yielded a high dielectric breakdown voltage. Accordingly, the present invention is able to providea thin semiconductor device having superior insulation properties and ESD resistance, and excellent reliability.

Claims (20)

1. A semiconductor device having a substrate, a semiconductor element disposed on thesubstrate, a wire that electrically connects the substrate and the semiconductor element, a flrst sealinglayer that seals a space below an apex of the wire, and a second sealing layer that is provided on top ofthe first sealing layer with the wire interposed therebetween, wherein the first sealing layer is formed from a cured film of a liquid sealing material, and the second sealing layer is formed from a dried coating film of an insulating resin coating material.
2. The semiconductor device according to Claim 1, also having a resin sealing member provided so as to cover at least the second sealing layer.
3. The semiconductor device according to Claim 1 or 2, wherein a dielectric breakdown voltage of the dried coating film of the insulating resin coating material is at least 150 kV/mm.
4. The semiconductor device according to any one of Claims 1 to 3, wherein the insulating resin coating material comprises a resin filler having an average particle size of 0.1 to 5.0 pm.
5. The semiconductor device according to any one of Claims 1 to 4, wherein a viscosity at 25 °C of the insulating resin coating material is within a range from 30 to 500 Pa-s.
6. The semiconductor device according to any one of Claims l to 5, wherein a thixotropic index at 25°C of the insulating resin coating material is within a range from 2.0 to 10.0.
7. The semiconductor device according to any one of Claims 1 to 6, wherein the insulating resincoating material comprises at least one insulating resin selected from the group consisting of a polyamide, a polyamideimide and a polyimide.
8. The semiconductor device according to any one of Claims l to 7, wherein a thickness of the second sealing layer is not more than 100 pm.
9. The semiconductor device according to Claim 8, wherein the thickness of the second sealing layer is not more than 50 pm.
10. The semiconductor device according to any one of Claims 7 to 9, wherein a Tg value of the insulating resin is at least l50°C.
11. The semiconductor device according to any one of Claims 1 to 10, wherein the liquid sealingmaterial comprises a thermosetting resin component and an inorganic f1ller, and a thixotropic index at75°C of the liquid sealing material, obtained as a value of viscosity A/ viscosity B, is within a rangefrom 0.1 to 2.5, wherein the viscosity A is a viscosity (Pa-s) measured under conditions of 75°C and ashear velocity of 5 s* and the viscosity B is a viscosity (Pa-s) measured under conditions of 75°C and a shear velocity of 50 s*.
12. The semiconductor device according to any one of Claims 1 to 11, wherein a chlorine ion content in the liquid sealing material is not more than 100 ppm.
13. The semiconductor device according to Claim 11 or 12, wherein a maximum particle size of the inorganic filler in the liquid sealing material is not more than 75 um.
14. The semiconductor device according to any one of Claims 1 to 13, wherein a viscosity of theliquid sealing material measured under conditions of 75°C and a shear velocity of 5 s* is not more than 3.0 Pa-s.
15. The semiconductor device according to any one of Claims 1 to 14, wherein a viscosity of theliquid sealing material measured under conditions of 25°C and a shear velocity of 10 s* is not more than 30 Pa-s.
16. The semiconductor device according to any one of Claims ll to 15, wherein an amount of the inorganic filler, based on a total mass of the liquid sealing material, is at least 50% by mass.
17. The semiconductor device according to any one of Claims ll to 16, wherein the thermosettingresin component in the liquid sealing material comprises an aromatic epoxy resin and an aliphatic epoxy resin.
18. The semiconductor device according to Claim 17, wherein the aromatic epoxy resin comprisesat least one resin selected from the group consisting of a liquid bisphenol epoxy resin and a liquid glycidylamine epoxy resin, and the aliphatic epoxy resin comprises a linear aliphatic epoxy resin.
19. The semiconductor device according to any one of Claims 1 to 18, Which is used in a fingerprint authentication sensor.
20. A method for producing a semiconductor device having a substrate, a semiconductor elementdisposed on the substrate, a wire that electrically connects the substrate and the semiconductorelement, a first sealing layer that seals a space below an apex of the wire, and a second sealing layerthat is provided on top of the first sealing layer with the wire interposed therebetween, the methodcomprising: a step of electrically connecting the substrate and the semiconductor element disposed on thesubstrate using the wire, a step of forming the first sealing layer by supplying a liquid sealing material to the spacebelow the apex of the wire, and a step of forming the second sealing layer by supplying an insulating resin coating material on top of the first sealing layer with the Wire interposed therebetween.
SE2050185A 2017-08-10 2018-08-07 Semiconductor device and method for producing same SE543901C2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017155891 2017-08-10
PCT/JP2018/029634 WO2019031513A1 (en) 2017-08-10 2018-08-07 Semiconductor device and method for producing same

Publications (2)

Publication Number Publication Date
SE2050185A1 true SE2050185A1 (en) 2020-02-20
SE543901C2 SE543901C2 (en) 2021-09-21

Family

ID=65272370

Family Applications (1)

Application Number Title Priority Date Filing Date
SE2050185A SE543901C2 (en) 2017-08-10 2018-08-07 Semiconductor device and method for producing same

Country Status (5)

Country Link
JP (1) JP7259750B2 (en)
DE (1) DE112018004093T5 (en)
SE (1) SE543901C2 (en)
TW (1) TWI763902B (en)
WO (1) WO2019031513A1 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7151550B2 (en) * 2019-02-26 2022-10-12 味の素株式会社 resin composition
CN113035795B (en) 2019-06-14 2022-11-08 深圳市汇顶科技股份有限公司 Chip packaging structure and electronic equipment
WO2022118853A1 (en) * 2020-12-03 2022-06-09 住友ベークライト株式会社 Thermosetting resin composition and semiconductor device
WO2023276093A1 (en) * 2021-06-30 2023-01-05 昭和電工マテリアルズ株式会社 Resin composition and method for producing semiconductor device
CN117954333B (en) * 2024-03-26 2024-05-28 深圳市东光长盛科技有限公司 High-reliability integrated circuit packaging method

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2697215B2 (en) * 1988-12-29 1998-01-14 日立化成工業株式会社 Heat resistant resin paste and IC using the same
US5300459A (en) * 1989-12-28 1994-04-05 Sanken Electric Co., Ltd. Method for reducing thermal stress in an encapsulated integrated circuit package
JPH0574831A (en) * 1991-09-11 1993-03-26 Nec Corp Semiconductor device
JP3729225B2 (en) * 1996-08-29 2005-12-21 信越化学工業株式会社 Semiconductor device
JPH10261741A (en) * 1997-03-19 1998-09-29 Oki Electric Ind Co Ltd Semiconductor device and manufacture of semiconductor device
KR100575086B1 (en) * 2004-11-11 2006-05-03 삼성전자주식회사 Semiconductor package with conductive molding compound and manufacturing method thereof
JP4939184B2 (en) * 2005-12-15 2012-05-23 キヤノン株式会社 Method for manufacturing liquid discharge head
JP5586185B2 (en) * 2009-08-06 2014-09-10 パナソニック株式会社 Semiconductor device
KR101503189B1 (en) * 2011-07-08 2015-03-16 미쓰이 가가쿠 가부시키가이샤 Polyimide resin composition and laminate including same
WO2013108784A1 (en) 2012-01-17 2013-07-25 日立化成株式会社 Resin paste and method for producing solar cell
US9466544B2 (en) * 2013-01-30 2016-10-11 Freescale Semiconductor, Inc. Semiconducitive catechol group encapsulant adhesion promoter for a packaged electronic device
WO2014128899A1 (en) 2013-02-22 2014-08-28 株式会社 日立製作所 Resin-sealed electronic control device
US9659848B1 (en) * 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
JP6710065B2 (en) 2016-03-03 2020-06-17 大阪瓦斯株式会社 Pipe insertion tool
JP6292334B1 (en) * 2017-03-31 2018-03-14 日立化成株式会社 Electronic circuit protective material, electronic circuit protective material sealing material, sealing method, and semiconductor device manufacturing method

Also Published As

Publication number Publication date
JPWO2019031513A1 (en) 2020-10-01
TW201921610A (en) 2019-06-01
WO2019031513A1 (en) 2019-02-14
JP7259750B2 (en) 2023-04-18
TWI763902B (en) 2022-05-11
DE112018004093T5 (en) 2020-05-20
SE543901C2 (en) 2021-09-21

Similar Documents

Publication Publication Date Title
SE2050185A1 (en) Semiconductor device and method for producing same
WO2013018847A1 (en) Epoxy resin composition for semiconductor encapsulation, semiconductor device using the same, and method for producing semiconductor device
JP6939110B2 (en) Thermosetting composition
WO2019123562A1 (en) Polyamide imide resin, polyamide imide resin composition, and semiconductor device using same
KR20110095172A (en) Epoxy resin composition
TW202128620A (en) Imide group-containing compound, imide group-containing curing agent, and epoxy resin cured product and electrical insulating material using the same
US6372839B1 (en) Flip-chip type semiconductor device underfill
JP5245474B2 (en) Resin composition for screen printing
JP7342355B2 (en) Resin composition and semiconductor device
JP5647769B2 (en) COF sealing resin composition
JPS62108555A (en) Semiconductor device
KR100936857B1 (en) Heat-resistant resin paste and method for producing same
JP2024051882A (en) Epoxy resin composition, cured product, and semiconductor device
JP7103401B2 (en) Underfill material and electronic component equipment using it
JP3674675B2 (en) Underfill material for flip chip type semiconductor devices
WO2012133415A1 (en) Resin paste, solar cell, method for manufacturing solar cell, resin film, and semiconductor device
JP4725124B2 (en) Resin composition and semiconductor device using the same
JP2000183239A (en) Semiconductor device
JP5011893B2 (en) Resin composition, method for producing the resin composition, and film-forming material containing the resin composition
TW201815951A (en) Curable liquid epoxy resin compositions useful as underfill material for semiconductor devices
JP2020113597A (en) Circuit board, manufacturing method thereof, and semiconductor device
JP2001098049A (en) Liquid epoxy resin composition for sealing semiconductor
CN107001768B (en) Copper bump liquid sealing material and its used resin combination
JP2000086742A (en) Epoxy resin composition and electroconductive paste
WO2016059980A1 (en) Liquid epoxy resin composition