TW201912310A - processing methods - Google Patents

processing methods Download PDF

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Publication number
TW201912310A
TW201912310A TW107126613A TW107126613A TW201912310A TW 201912310 A TW201912310 A TW 201912310A TW 107126613 A TW107126613 A TW 107126613A TW 107126613 A TW107126613 A TW 107126613A TW 201912310 A TW201912310 A TW 201912310A
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Taiwan
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processing
workpiece
holding
grinding
cutting blade
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TW107126613A
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Chinese (zh)
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TWI793147B (en
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竹之內研二
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日商迪思科股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043Making grooves, e.g. cutting
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/007Use, recovery or regeneration of abrasive mediums
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3046Mechanical treatment, e.g. grinding, polishing, cutting using blasting, e.g. sand-blasting

Abstract

To smoothly perform processing while suppressing wear of a processing grinding stone in the case of processing a workpiece formed of a hard-to-cut material or the like. A processing method includes: a holding step of holding a workpiece by a holding table having a holding surface for holding a workpiece; and a processing step of processing the workpiece by a processing mechanism having a processing grinding stone after performing the holding step. The processing grinding stone is made of a ceramic binding agent in combination with abrasive grains. In addition, in the processing step, processing water is supplied to the workpiece, and a processing surface of the processing grinding stone is irradiated with light of a predetermined wavelength from light irradiation mechanism.

Description

加工方法processing method

發明領域 本發明是有關於一種以加工磨石來加工被加工物的加工方法,該加工磨石是以陶瓷結合劑結合磨粒而製成。FIELD OF THE INVENTION The present invention relates to a processing method for processing an object by using a processing grindstone, which is made of a ceramic binder and abrasive grains.

發明背景 半導體晶圓等的板狀被加工物在進行磨削而薄化成既定厚度後,會藉由切割來進行分割而變成個別的元件晶片,進而利用於各種電子設備等。然後,晶圓是由氮化鎵(GaN)、碳化矽(SiC)或砷化鎵(GaAs)等的難削材料所形成的情況下,則廣泛利用如下方法:使用以陶瓷結合劑結合磨粒而製成之磨削磨石的磨削方法(例如,參照專利文獻1)、及使用以陶瓷結合劑結合磨粒而製成之切割磨石的切割方法(例如,參照專利文獻2)。 先前技術文獻 專利文獻BACKGROUND OF THE INVENTION After a plate-shaped workpiece such as a semiconductor wafer is ground to a predetermined thickness after being ground, it is divided into individual element wafers by slicing, and then used in various electronic devices and the like. Then, when a wafer is formed of a hard-to-cut material such as gallium nitride (GaN), silicon carbide (SiC), or gallium arsenide (GaAs), the following methods are widely used: the use of a ceramic binder to bond abrasive grains A grinding method of the manufactured grinding stone (for example, refer to Patent Document 1) and a cutting method using a cutting grindstone made by combining abrasive grains with a ceramic binder (for example, see Patent Document 2). Prior Art Literature Patent Literature

專利文獻1:日本專利特開2014-124690號公報 專利文獻2:日本專利特開2013-219215號公報Patent Document 1: Japanese Patent Laid-Open No. 2014-124690 Patent Document 2: Japanese Patent Laid-Open No. 2013-219215

發明概要 發明欲解決之課題 然而,在上述任一種方法中,皆具有磨石的磨耗量遠在需求之上而導致生產成本增加這樣的問題。又,在加工由難削材料所形成之被加工物時,具有磨石的加工能力降低,而使生產性降低這樣的問題。又,利用磨石來加工在加工位置包含金屬之被加工物的情況下,亦具有因金屬的延展性而變得難以加工這樣的問題。SUMMARY OF THE INVENTION Problems to be Solved by the Invention However, in any of the above methods, there is a problem that the amount of grinding stone wear is far above the demand and the production cost is increased. In addition, when processing a workpiece formed of a difficult-to-cut material, there is a problem that the processing ability of a grindstone is reduced and productivity is reduced. Moreover, when using a grindstone to process a to-be-processed object containing a metal at a processing position, there is also a problem that it becomes difficult to process due to the ductility of the metal.

因此,在加工由難削材料等所形成之被加工物的情況下,具有要能夠抑制加工磨石的過度磨耗並且能夠順利地進行穩定加工這樣的課題。 用以解決課題之課題For this reason, when processing a to-be-processed object formed from a difficult-to-cut material or the like, there is a problem that it is possible to suppress excessive abrasion of the processing grindstone and to perform stable processing smoothly. Problems to be solved

用以解決上述課題的本發明是一種加工方法,是被加工物的加工方法,具備:保持步驟,以具有保持被加工物之保持面的保持台保持被加工物;及加工步驟,在實施該保持步驟後,以包含加工磨石之加工機構來加工被加工物,該加工磨石是以陶瓷結合劑結合磨粒而製成,又,該加工步驟中,對被加工物供給加工水,並且從光照射機構對該加工磨石的加工面照射既定波長的光。The present invention for solving the above-mentioned problems is a processing method and a processing method of a workpiece, comprising: a holding step for holding the workpiece on a holding table having a holding surface for holding the workpiece; and a processing step for carrying out the processing After the holding step, the object to be processed is processed by a processing mechanism including a processing grindstone, which is made of a ceramic binder in combination with abrasive grains. In this processing step, processing water is supplied to the object to be processed, and A light of a predetermined wavelength is irradiated from the light irradiation means to the processing surface of the processing grindstone.

用以解決上述課題的本發明是一種加工方法,其中前述加工機構具有具備前述加工磨石之切割刀片,前述加工步驟中,以該切割刀片切割被加工物。The present invention for solving the above-mentioned problems is a processing method in which the processing mechanism includes a cutting blade provided with the processing grindstone, and in the processing step, the workpiece is cut with the cutting blade.

用以解決上述課題的本發明是一種加工方法,其中前述加工機構具有具備前述加工磨石之磨削輪,前述加工步驟中,以該磨削輪磨削被加工物。 發明效果The present invention for solving the above-mentioned problems is a processing method in which the processing mechanism includes a grinding wheel including the processing grindstone, and in the processing step, a workpiece is ground with the grinding wheel. Invention effect

本發明之被加工物的加工方法具備:保持步驟,以具有保持被加工物之保持面的保持台保持被加工物;及加工步驟,在實施保持步驟後,以包含加工磨石之加工機構來加工被加工物,該加工磨石是以陶瓷結合劑結合磨粒而製成,又,加工步驟中,對被加工物供給加工水,並且從光照射機構對加工磨石的加工面照射既定波長的光,藉此,例如可以使加工磨石親水化而提升加工水所帶來的冷卻效果,進而抑制加工磨石的過度磨耗,並且使加工屑的排出性提升。此外,藉由加工磨石的親水化等,會有效地對加工磨石的加工區域供給加工水,因此可以防止加工熱所導致的加工品質變差,即使被加工物是由難削材料所形成之晶圓,亦能夠順利地實施穩定加工。A method for processing a workpiece according to the present invention includes: a holding step for holding the workpiece with a holding table having a holding surface for holding the workpiece; and a processing step for carrying out the holding step by a processing mechanism including a grinding stone. The processed grinding stone is made of a ceramic binder combined with abrasive grains. In the processing step, processing water is supplied to the workpiece, and the processing surface of the processed grinding stone is irradiated with a predetermined wavelength from a light irradiation mechanism. By this, for example, the processing grindstone can be made hydrophilic to enhance the cooling effect brought by the processing water, thereby suppressing excessive wear of the processing grindstone, and improving the discharge of processing debris. In addition, due to the hydrophilization of the processing grindstone, processing water is effectively supplied to the processing area of the processing grindstone, so that the deterioration of the processing quality caused by the processing heat can be prevented, even if the workpiece is formed of a difficult-to-cut material The wafer can also be stably processed.

(實施形態1) 圖1所示之磨削裝置1是將保持於保持台30上之被加工物W藉由具備磨削輪74之加工機構7來磨削的裝置。磨削裝置1之基座10上的前方側(-Y方向側)成為裝卸區域A,即對保持台30進行被加工物W之裝卸的區域,基座10上的後方則成為加工區域B,即藉由加工機構7進行被加工物W之磨削的區域。在基座10上的前方側配設有輸入機構12,用以供操作者對磨削裝置1輸入加工條件等。(Embodiment 1) The grinding device 1 shown in FIG. 1 is a device for grinding a workpiece W held on a holding table 30 by a machining mechanism 7 including a grinding wheel 74. The front side (-Y direction side) on the base 10 of the grinding device 1 is a loading and unloading area A, that is, an area for loading and unloading the workpiece W on the holding table 30, and the rear on the base 10 is a processing area B. That is, the area where the workpiece W is ground by the processing mechanism 7. An input mechanism 12 is provided on the front side of the base 10 for an operator to input processing conditions and the like to the grinding device 1.

保持台30例如其外形為圓形,且具備:吸附部300,吸附被加工物W;及框體301,支撐吸附部300。吸附部300是連通於未圖示的吸引源,並在吸附部300的露出面即保持面300a上吸引保持被加工物W。保持台30的保持面300a形成為圓錐面,該圓錐面具備以保持台30的旋轉中心為頂點的極平緩之傾斜。保持台30被罩蓋31從周圍包圍,可以繞著Z軸方向的軸心旋轉,並且可以藉由未圖示的Y軸方向進給機構,在Y軸方向上於裝卸區域A與加工區域B之間往返移動,該Y軸方向進給機構配設於罩蓋31及連結於罩蓋31之伸縮罩31a的下方。The holding table 30 has, for example, a circular shape, and includes a suction unit 300 that suctions the workpiece W, and a frame 301 that supports the suction unit 300. The suction part 300 is connected to a suction source (not shown), and sucks and holds the workpiece W on the holding surface 300 a that is the exposed surface of the suction part 300. The holding surface 300 a of the holding table 30 is formed as a conical surface having an extremely gentle inclination with the rotation center of the holding table 30 as a vertex. The holding table 30 is surrounded by the cover 31 from the surroundings, and can be rotated around the axis in the Z-axis direction. The Y-axis direction feeding mechanism can be used in the Y-axis direction between the loading area A and the processing area B. The Y-axis direction feed mechanism is disposed below the cover 31 and the telescopic cover 31 a connected to the cover 31.

在加工區域B上豎立設置有柱部11,在柱部11的側面配設有磨削進給機構5,該磨削進給機構5會將加工機構7朝Z軸方向作磨削進給。磨削進給機構5是由滾珠螺桿50、一對導軌51、馬達52、升降板53、及托座54所構成,該滾珠螺桿50具有Z軸方向之軸心,該一對導軌51是與滾珠螺桿50平行地配設,該馬達52是連結於滾珠螺桿50的上端且使滾珠螺桿50旋動,該升降板53是將内部的螺帽螺合於滾珠螺桿50且側部滑接於導軌51,該托座54是連結於升降板53且保持加工機構7,當馬達52使滾珠螺桿50旋動時,會伴隨於此而使升降板53被導軌51引導而在Z軸方向上往返移動,以將保持於托座54上的加工機構7朝Z軸方向作磨削進給。A column portion 11 is erected on the processing area B. A grinding feed mechanism 5 is disposed on the side of the column portion 11. The grinding feed mechanism 5 feeds the processing mechanism 7 in the Z-axis direction. The grinding feed mechanism 5 is composed of a ball screw 50, a pair of guide rails 51, a motor 52, a lifting plate 53, and a bracket 54. The ball screw 50 has an axial center in the Z-axis direction. The ball screw 50 is arranged in parallel. The motor 52 is connected to the upper end of the ball screw 50 and rotates the ball screw 50. The lifting plate 53 screwes the internal nut to the ball screw 50 and slides the side to the guide rail. 51. The bracket 54 is connected to the lifting plate 53 and holds the processing mechanism 7. When the ball screw 50 is rotated by the motor 52, the lifting plate 53 is guided by the guide rail 51 and moves back and forth in the Z-axis direction along with this. In order to grind the machining mechanism 7 held on the bracket 54 in the Z-axis direction.

加工機構7具備:旋轉軸70,軸方向為Z軸方向;殼體71,將旋轉軸70支撐成可旋轉;馬達72,將旋轉軸70旋轉驅動;機座73,連結於旋轉軸70的前端;及磨削輪74,可裝卸地裝設於機座73的下表面。The processing mechanism 7 is provided with a rotation shaft 70 in the Z-axis direction; a housing 71 supporting the rotation shaft 70 so as to be rotatable; a motor 72 rotatingly driving the rotation shaft 70; and a base 73 connected to the front end of the rotation shaft 70 And grinding wheel 74, which is detachably mounted on the lower surface of the base 73.

磨削輪74是由環狀的輪基台74b及複數個大致長方體形狀的加工磨石74a所構成,該複數個大致長方體形狀的加工磨石74a環狀地配設於輪基台74b的底面(自由端部)。加工磨石74a是以玻質、陶質的結合劑即陶瓷結合劑結合鑽石磨粒而製成。作為陶瓷結合劑,例如是以二氧化矽(SiO2)為主成分,並且可以加入微量的添加劑以控制熔點。再者,加工磨石74a的形狀可以為形成一體的環狀。The grinding wheel 74 is composed of a ring-shaped wheel base 74b and a plurality of approximately rectangular parallelepiped-shaped grinding stones 74a. The plurality of substantially rectangular parallelepiped-shaped grinding stones 74a are arranged annularly on the bottom surface of the wheel base 74b. (Free end). The processing grindstone 74a is made of a glassy and ceramic bonding agent, namely, a ceramic bonding agent and diamond abrasive grains. As the ceramic binder, for example, silicon dioxide (SiO2) is the main component, and a small amount of additives can be added to control the melting point. In addition, the shape of the processing grindstone 74a may be formed in an integrated ring shape.

在圖1所示之旋轉軸70的內部,連通於加工水供給機構8而成為加工水之通道的流路70a貫通設置於旋轉軸70的軸方向(Z軸方向)上,經過流路70a之加工水能夠通過機座73而從輪基台74b朝向加工磨石74a噴出。Inside the rotating shaft 70 shown in FIG. 1, a flow path 70 a that communicates with the processing water supply mechanism 8 and serves as a channel for the processing water is provided in the axial direction (Z-axis direction) of the rotating shaft 70 and passes through the flow path 70 a. The processing water can be sprayed from the wheel base 74b toward the processing grindstone 74a through the bed 73.

圖1所示之加工水供給機構8例如具備:加工水源80,儲存有水(例如純水);配管81,連接於加工水源80並連通於流路70a;及調整閥82,配設於配管81上的任意位置來調整加工水的流量。The processing water supply mechanism 8 shown in FIG. 1 includes, for example, a processing water source 80 that stores water (e.g., pure water), a piping 81 connected to the processing water source 80 and communicating with the flow path 70a, and an adjustment valve 82 disposed on the piping. Any position on 81 to adjust the flow of process water.

如圖1、2所示,磨削裝置1具備有光照射機構9,該光照射機構9例如鄰接於保持台30而配設,對加工磨石74a之加工面(下表面)照射既定波長的光,該加工磨石74a會磨削以保持台30保持之被加工物W。如圖2所示,光照射機構9例如具備有:台部90,具備大致圓弧狀的外形;發光部91,在台部90的上表面配設成有複數個(在圖示的例中為4個)並列;洗淨水供給部92,朝向發光部91供給洗淨水(例如純水);及罩蓋93,防止髒污附著於發光部91。As shown in FIGS. 1 and 2, the grinding device 1 is provided with a light irradiation mechanism 9, which is arranged adjacent to the holding table 30, for example, and irradiates the processing surface (lower surface) of the processing grindstone 74 a with a predetermined wavelength. Lightly, the processing grindstone 74 a is ground to hold the workpiece W held by the stage 30. As shown in FIG. 2, the light irradiation mechanism 9 includes, for example, a table portion 90 having a substantially arc-shaped outer shape, and a plurality of light emitting portions 91 disposed on the upper surface of the table portion 90 (in the example shown in the figure). There are four) in parallel; the washing water supply unit 92 supplies washing water (for example, pure water) toward the light emitting unit 91; and the cover 93 prevents dirt from adhering to the light emitting unit 91.

埋設在台部90上表面所形成之凹穴的發光部91例如為低壓水銀燈或UVLED,能夠發出既定波長的光,並且能夠藉由未圖示的開關來切換開啟/關閉。發光部91例如能夠發出2種波長的光,較佳為能夠發出80nm以上200nm以下之波長的光與240nm以上280nm以下之波長的光。又,發光部91更佳為能夠發出波長365nm的光。本實施形態中的發光部91為2波長LED或低壓水銀燈,能夠同時發出波長184.9nm的紫外光與波長253.7nm的紫外光。The light-emitting portion 91 embedded in the cavity formed on the upper surface of the table portion 90 is, for example, a low-pressure mercury lamp or UVLED, which can emit light of a predetermined wavelength, and can be switched on / off by a switch (not shown). The light emitting section 91 can emit light of two wavelengths, for example, and preferably emits light of a wavelength of 80 nm to 200 nm and light of a wavelength of 240 nm to 280 nm. The light emitting section 91 is more preferably capable of emitting light having a wavelength of 365 nm. The light-emitting portion 91 in this embodiment is a two-wavelength LED or a low-pressure mercury lamp, and can simultaneously emit ultraviolet light having a wavelength of 184.9 nm and ultraviolet light having a wavelength of 253.7 nm.

板狀的罩蓋93例如是由可以使發光部91產生的光穿透的玻璃等透明構件所構成,且是以會覆蓋發光部91的方式被固定於台部90的上表面。例如,台部90是可以藉由未圖示的Z軸方向移動機構作上下移動,在實施磨削加工時,可以將罩蓋93之上表面的高度位置設定於有考量到加工磨石74a之磨削進給位置的預期高度位置。The plate-shaped cover 93 is made of, for example, a transparent member such as glass that can transmit light generated by the light-emitting portion 91, and is fixed to the upper surface of the table portion 90 so as to cover the light-emitting portion 91. For example, the table portion 90 can be moved up and down by a Z-axis direction moving mechanism (not shown). When the grinding process is performed, the height position of the upper surface of the cover 93 can be set to take into account the grinding stone 74a. The expected height position of the grinding feed position.

洗淨水供給部92例如具備:未圖示的洗淨水源,儲存有水(例如純水);及洗淨水噴嘴920,連通於洗淨水源。洗淨水噴嘴920例如沿著台部90被固定於台部90的側面,且在長邊方向上排列設置有複數個噴射口920a,該噴射口920a可以朝向罩蓋93上表面噴射洗淨水。噴射口920a是以能夠將已噴射之洗淨水在罩蓋93的上表面上清流化的方式來設定形狀、尺寸、及相對於發光部91的角度等。噴射口920a宜如圖2所示地形成為窄幅的狹縫狀,且有複數個排列設置於洗淨水噴嘴920的側面等,但並不限定於此。例如噴射口920a亦可形成為圓孔狀,且有複數個排列設置於洗淨水噴嘴920的側面等。或者,噴射口920a亦可在洗淨水噴嘴920的側面等形成為一條連續延伸的窄幅狹縫狀。The washing water supply unit 92 includes, for example, a washing water source (not shown) that stores water (for example, pure water), and a washing water nozzle 920 that communicates with the washing water source. The washing water nozzle 920 is, for example, fixed to the side surface of the table part 90 along the table part 90, and a plurality of spraying ports 920a are arranged in a row along the longitudinal direction. The spraying ports 920a can spray the washing water toward the upper surface of the cover 93. . The spray port 920 a is configured to set the shape, the size, the angle with respect to the light emitting section 91, and the like so that the sprayed washing water can be cleared and fluidized on the upper surface of the cover 93. The spray port 920a is preferably formed in a narrow slit shape as shown in FIG. 2 and a plurality of spray ports 920a are arranged on the side of the washing water nozzle 920, but is not limited thereto. For example, the spray port 920a may be formed in a circular hole shape, and a plurality of spray ports 920a may be arranged on the side surface of the washing water nozzle 920. Alternatively, the spray port 920a may be formed in a narrow slit shape extending continuously on the side of the washing water nozzle 920 or the like.

以下,針對使用圖1所示之磨削裝置1實施本發明之加工方法時的加工方法之各步驟及磨削裝置1之運作來逐步說明。 圖1所示之外形為圓形板狀之被加工物W例如是由難削材料的SiC所形成的半導體晶圓,在圖1中朝向下側的被加工物W之正面Wa上,於藉由分割預定線所劃分的格子狀區域形成有多個元件,並貼附有保護正面Wa的保護膠帶T。被加工物W之背面Wb成為被磨削輪74磨削的被磨削面。再者,被加工物W的形狀及種類並無特別限定,可以根據與磨削輪74的關係來適當變更,亦包含由GaAS或GaN等所形成的晶圓,或是由金屬所形成的晶圓或金屬電極有部分露出於晶圓背面的晶圓。Hereinafter, each step of the machining method and the operation of the grinding device 1 when the machining method of the present invention is implemented using the grinding device 1 shown in FIG. 1 will be described step by step. The processed object W having a circular plate shape shown in FIG. 1 is, for example, a semiconductor wafer formed of SiC, which is a hard-to-cut material. On the front surface Wa of the processed object W facing downward in FIG. A plurality of elements are formed in a grid-like region divided by a predetermined division line, and a protective tape T for protecting the front surface Wa is attached. The back surface Wb of the workpiece W becomes a ground surface to be ground by the grinding wheel 74. In addition, the shape and type of the workpiece W are not particularly limited, and may be appropriately changed according to the relationship with the grinding wheel 74. It also includes wafers made of GaAS or GaN, or crystals made of metal. Wafers with round or metal electrodes partially exposed on the back of the wafer.

(1)保持步驟 首先,在裝卸區域A內,被加工物W以背面Wb成為上側的方式載置於保持台30的保持面300a上。然後,將由未圖示的吸引源所產生的吸引力傳達至保持面300a,藉此讓保持台30在保持面300a上吸引保持被加工物W。被加工物W成為緊貼著平緩之圓錐面即保持面300a而被吸引保持的狀態。(1) Holding step First, in the loading / unloading area A, the workpiece W is placed on the holding surface 300a of the holding table 30 so that the back surface Wb becomes the upper side. Then, the suction force generated by a suction source (not shown) is transmitted to the holding surface 300a, whereby the holding table 30 sucks and holds the workpiece W on the holding surface 300a. The workpiece W is in a state of being attracted and held in close contact with the holding surface 300a, which is a gentle conical surface.

(2)加工步驟 藉由未圖示的Y軸方向進給機構將保持台30往+Y方向移動到加工機構7之下方,並進行磨削輪74與保持於保持台30之被加工物W的對位。對位例如是以下述方式進行:使磨削輪74的旋轉中心相對於被加工物W的旋轉中心朝+Y方向僅偏移既定距離,而使加工磨石74a的旋轉軌跡通過被加工物W的旋轉中心。又,調整保持台30的傾斜以使平緩之圓錐面即保持面300a相對於加工磨石74a之下表面即加工面成為平行,藉此使被加工物W的背面Wb相對於加工磨石74a的加工面成為平行。(2) Machining step The holding table 30 is moved below the processing mechanism 7 by the Y-axis direction feeding mechanism (not shown), and the grinding wheel 74 and the workpiece W held on the holding table 30 are performed. Counterpoint. The alignment is performed, for example, by shifting the rotation center of the grinding wheel 74 with respect to the rotation center of the workpiece W in a + Y direction by a predetermined distance, and passing the rotation locus of the processing grindstone 74a through the workpiece W. Center of rotation. Further, the inclination of the holding table 30 is adjusted so that the flat conical surface, that is, the holding surface 300a, is parallel to the lower surface of the processing stone 74a, that is, the processing surface, so that the back surface Wb of the workpiece W is relative to the The working surface becomes parallel.

進行磨削輪74與被加工物W的對位後,伴隨於藉由馬達72將旋轉軸70旋轉驅動,如圖3所示,磨削輪74從+Z方向側來觀看會是繞著逆時針方向旋轉。又,藉由磨削進給機構5將加工機構7朝-Z方向進給,加工機構7所具備之磨削輪74逐漸往-Z方向下降,使加工磨石74a抵接於被加工物W的背面Wb,藉此進行磨削加工。此外,磨削中,伴隨於保持台30從+Z方向側來觀看會是繞著逆時針方向旋轉,被加工物W也會跟著旋轉,因此加工磨石74a會進行被加工物W的背面Wb的整個面的磨削加工。After the grinding wheel 74 is aligned with the workpiece W, as the rotary shaft 70 is driven by the motor 72 to rotate, as shown in FIG. 3, the grinding wheel 74 is viewed in a reverse direction when viewed from the + Z direction side. Rotate clockwise. In addition, the grinding mechanism 74 feeds the machining mechanism 7 in the -Z direction by the grinding feed mechanism 5, and the grinding wheel 74 provided in the machining mechanism 7 gradually descends in the -Z direction, so that the grinding stone 74a abuts on the workpiece W. The back surface Wb is thus ground. In addition, during grinding, as the holding table 30 rotates counterclockwise when viewed from the + Z direction side, the workpiece W also rotates. Therefore, the grinding stone 74a performs the back surface Wb of the workpiece W. Grinding of the entire surface.

在磨削加工中,加工水供給機構8對旋轉軸70中的流路70a供給加工水。如圖3所示,供給至流路70a的加工水會通過在機座73的內部於機座73的圓周方向上隔著恆定的間隔所形成的流路73b,再從輪基台74b的噴射口74d朝向加工磨石74a噴射。During the grinding process, the processing water supply mechanism 8 supplies processing water to the flow path 70 a in the rotary shaft 70. As shown in FIG. 3, the processing water supplied to the flow path 70a passes through the flow path 73b formed at a constant interval in the circumferential direction of the frame 73 inside the frame 73, and is sprayed from the wheel base 74b. The port 74d is sprayed toward the processing grindstone 74a.

被加工物W在保持台30的平緩之圓錐面即保持面300a上緊貼著保持面300a而被吸引保持,因此在圖4(A)以兩點鏈線表示的磨削輪74之旋轉軌跡中的區域E(以下為加工區域E)中,加工磨石74a會抵接於被加工物W並進行磨削。The workpiece W is attracted and held against the holding surface 300a, which is the gentle conical surface of the holding table 30, that is, the holding surface 300a. Therefore, the rotation track of the grinding wheel 74 shown by a two-point chain line in FIG. 4 (A) In the middle region E (hereinafter referred to as the processing region E), the processing grindstone 74 a abuts on the workpiece W and performs grinding.

鄰接於保持台30而配設的光照射機構9例如在磨削輪74與保持台30的對位已完成的狀態下,會在磨削輪74即將進入以保持台30保持之被加工物W之前,亦即在加工磨石74a即將進入加工區域E之前,如圖4(A)所示地配置在保持台30及磨削輪74的旋轉軌跡上。The light irradiation mechanism 9 disposed adjacent to the holding table 30 is, for example, in a state where the alignment of the grinding wheel 74 and the holding table 30 has been completed, and the grinding wheel 74 is about to enter to hold the workpiece W held by the holding table 30. Previously, that is, immediately before the processing grindstone 74 a entered the processing area E, it was placed on the rotation track of the holding table 30 and the grinding wheel 74 as shown in FIG. 4 (A).

伴隨於磨削加工的開始,如圖4(B)所示,發光部91成為開啟狀態,發光部91會朝向+Z方向照射例如波長184.9nm的紫外光與波長253.7nm的紫外光。所照射的光會穿透罩蓋93而照射至即將進入加工區域E之前的加工磨石74a之下表面。With the start of the grinding process, as shown in FIG. 4 (B), the light emitting section 91 is turned on, and the light emitting section 91 is irradiated with ultraviolet light having a wavelength of 184.9 nm and ultraviolet light having a wavelength of 253.7 nm in the + Z direction, for example. The irradiated light passes through the cover 93 and irradiates the lower surface of the processing grindstone 74 a immediately before entering the processing area E.

藉由對即將進入加工區域E之前的加工磨石74a之下表面照射波長184.9nm的紫外光,存在於加工磨石74a之下表面與發光部91之間的空氣中之氧分子會吸收紫外光,而生成基態的氧原子。所生成之氧原子會與周圍的氧分子鍵結而生成臭氧。又,波長184.9nm的紫外光會將附著於加工磨石74a之加工面的磨削屑所造成的有機污染等的分子間鍵結及原子間鍵結切斷而成為激發狀態,藉此分解有機污染。此外,產生之臭氧會吸收波長253.7nm的紫外光,藉此生成激發狀態的活性氧。由於活性氧或臭氧具有高氧化力,因此會與在加工磨石74a之加工面所產生之碳或氫等鍵結,而在加工磨石74a之加工面形成羥基、醛基、及羧基等極性大的親水基。其結果,加工磨石74a會親水化,加工水在加工磨石74a之加工面上將不易變成水滴,且加工水將容易在加工磨石74a之整個加工面展開成水膜狀。By irradiating ultraviolet light with a wavelength of 184.9 nm to the lower surface of the processing millstone 74a immediately before entering the processing area E, oxygen molecules existing in the air between the lower surface of the processing millstone 74a and the light-emitting portion 91 will absorb ultraviolet light. And generate an oxygen atom in the ground state. The generated oxygen atoms will bond with the surrounding oxygen molecules to generate ozone. In addition, the ultraviolet light with a wavelength of 184.9 nm cuts off the intermolecular bonds and interatomic bonds caused by the organic pollution caused by the grinding debris adhering to the working surface of the processing grindstone 74a, thereby breaking the organic state, thereby decomposing organic matter. Pollution. In addition, the generated ozone absorbs ultraviolet light with a wavelength of 253.7 nm, thereby generating active oxygen in an excited state. Because active oxygen or ozone has high oxidizing power, it will bond with carbon or hydrogen generated on the processing surface of the processing stone 74a, and form polarities such as hydroxyl group, aldehyde group, and carboxyl group on the processing surface of the processing stone 74a. Large hydrophilic group. As a result, the processing grindstone 74a becomes hydrophilic, and the processing water will not easily become water droplets on the processing surface of the processing grindstone 74a, and the processing water will easily spread into a water film shape on the entire processing surface of the processing grindstone 74a.

已進行親水化的加工磨石74a會伴隨著大量的加工水進入加工區域E內,並磨削被加工物W的背面Wb。會有更多加工水進入被加工物W之背面Wb與加工磨石74a之加工面的接觸部位,藉此能夠抑制發生在接觸部位的摩擦熱之產生。The processed grinding stone 74a that has been hydrophilized enters the processing area E with a large amount of processing water, and grinds the back surface Wb of the workpiece W. More processing water enters the contact portion between the back surface Wb of the workpiece W and the processing surface of the processing grindstone 74a, whereby the generation of frictional heat at the contact portion can be suppressed.

如圖5所示,在磨削加工中,洗淨水供給部92朝向罩蓋93的上表面供給洗淨水。亦即,從未圖示的洗淨水源往洗淨水噴嘴920供給洗淨水,該洗淨水從噴射口920a朝向噴嘴外部噴出,而如描繪拋物線般地到達罩蓋93上。然後,洗淨水的水流一邊被適度整流化一邊將附著於罩蓋93上的磨削屑等的污染去除,藉此維持在磨削中,發光部91所產生之光會適當地照射到加工磨石74a之加工面的狀態。As shown in FIG. 5, during the grinding process, the washing water supply unit 92 supplies washing water toward the upper surface of the cover 93. That is, washing water is supplied from a washing water source (not shown) to the washing water nozzle 920, and the washing water is ejected from the injection port 920a toward the outside of the nozzle and reaches the cover 93 like a parabola. Then, while the water flow of the washing water is moderately rectified, the contamination of the grinding chips and the like attached to the cover 93 is removed, thereby maintaining the grinding, and the light generated by the light emitting portion 91 is appropriately irradiated to the processing. The state of the processed surface of the grindstone 74a.

本發明之被加工物的加工方法具備:保持步驟,以具有保持被加工物W之保持面300a的保持台30保持被加工物W;及加工步驟,在實施保持步驟後,以包含加工磨石74a之加工機構7來磨削加工被加工物W,該加工磨石74a是以陶瓷結合劑結合磨粒而製成,又,加工步驟中,對被加工物W供給加工水,並且從光照射機構9對加工磨石74a的加工面照射既定波長的光,藉此,會使更多加工水進入被加工物W之背面Wb與加工磨石74a之加工面的接觸部位,而能夠抑制發生在接觸部位的摩擦熱之產生,進而抑制加工磨石74a的磨耗(超過會促進適當自銳(self-sharpening)之磨耗的異常磨耗)。又,可以藉由加工水高效率地將在被加工物W之背面Wb與加工磨石74a之加工面的接觸部位所產生的磨削屑排除。此外,藉由加工磨石74a的親水化等,會有效地對加工磨石74a磨削被加工物W的加工區域E供給加工水,因此可以防止因加工熱的上升導致發生晶圓燒焦等的加工品質變差,即使被加工物W是由難削材料所形成之晶圓,亦能夠順利地實施穩定磨削。The method for processing a workpiece according to the present invention includes a holding step for holding the workpiece W with a holding table 30 having a holding surface 300a for holding the workpiece W; and a processing step for including a processing grindstone after the holding step is performed. The processing mechanism 7 of 74a grinds and processes the workpiece W. The grinding stone 74a is made of a ceramic binder in combination with abrasive grains. In the processing step, processing water is supplied to the workpiece W and is irradiated with light. The mechanism 9 irradiates the processing surface of the processing grindstone 74a with light of a predetermined wavelength, thereby allowing more processing water to enter the contact portion between the back surface Wb of the workpiece W and the processing surface of the processing grindstone 74a, thereby suppressing occurrence of The generation of frictional heat at the contact portion further suppresses the abrasion of the processing grindstone 74a (exceeding abnormal wear that would promote proper self-sharpening). In addition, the grinding water generated at the contact portion between the back surface Wb of the workpiece W and the processing surface of the processing grindstone 74a can be efficiently removed by the processing water. In addition, the hydrophilization of the processing grindstone 74a effectively supplies the processing water to the processing area E where the processing grindstone 74a grinds the workpiece W, so that it is possible to prevent the occurrence of wafer scorch and the like due to an increase in processing heat. The processing quality deteriorates, and even if the workpiece W is a wafer formed of a difficult-to-cut material, stable grinding can be smoothly performed.

本發明之發明人為了驗證本發明之加工方法的加工步驟中對加工磨石之加工面照射波長365nm之光的效果,而進行了下述實驗1。在實驗1中,採用厚度10mm的鈉玻璃板作為圓形板狀之被加工物W。又,磨削輪74的加工磨石74a是採用以陶瓷結合劑結合粒徑♯1000之鑽石磨粒而製成的磨石。The inventors of the present invention conducted the following experiment 1 in order to verify the effect of irradiating the working surface of the processing grindstone with light having a wavelength of 365 nm in the processing steps of the processing method of the present invention. In Experiment 1, a soda glass plate having a thickness of 10 mm was used as the circular plate-shaped workpiece W. In addition, the grinding stone 74a of the grinding wheel 74 is a grinding stone made by bonding diamond abrasive grains having a particle size of ♯1000 with a ceramic binder.

在實驗1中,實施保持步驟後,用以下所示之加工條件實施加工步驟。 磨削輪74的旋轉數(rpm) :2000rpm 保持台30的旋轉數(rpm) :300rpm 磨削輪74的磨削進給速度(下降速度) :0.5μm/秒 實驗1中,在加工步驟中,使用LED燈作為圖2所示之光照射機構9的發光部91,對磨削輪74之加工磨石74a的下表面照射波長365nm的紫外光並且將被加工物W磨削50μm,接著,停止從發光部91對加工磨石74a的下表面照射紫外光並且將被加工物W磨削50μm,重複連續地實施這種伴隨照射紫外光的磨削與不伴隨照射紫外光的磨削。加工水對加工磨石74a的供給等,則是與上述加工步驟相同地進行。In Experiment 1, after the holding step was performed, the processing steps were performed under the processing conditions shown below. Number of rotations of grinding wheel 74 (rpm): 2000 rpm Number of rotations of holding table 30 (rpm): 300 rpm Grinding feed rate (falling speed) of grinding wheel 74: 0.5 μm / sec In Experiment 1, in the processing step Using an LED lamp as the light emitting portion 91 of the light irradiation mechanism 9 shown in FIG. 2, the lower surface of the grinding stone 74 a of the grinding wheel 74 is irradiated with ultraviolet light having a wavelength of 365 nm and the workpiece W is ground by 50 μm. The lower surface of the processing grindstone 74 a is irradiated with ultraviolet light from the light emitting portion 91 and the workpiece W is ground by 50 μm, and the grinding with and without the ultraviolet light is repeatedly and continuously performed. The supply of the processing water to the processing grindstone 74a is performed in the same manner as the processing steps described above.

圖6所示之描點圖P1是將實驗1所得到之測量值描點而成的圖,在描點圖P1中,横軸表示將被加工物W每磨削50μm時的磨削輪74之加工磨石74a的消耗量(μm),縱軸表示磨削輪74將被加工物W磨削50μm之期間所承受的最大加工載重(N)。一邊照射紫外光一邊進行磨削的情況下所測量出的加工磨石74a的消耗量值與磨削輪74所承受的最大加工載重值在描點圖P1中是以圓點來表示,且是藉由以虛線表示之圖形G1來表示其推移,而能夠容易掌握其推移。又,未照射紫外光而進行磨削的情況下所測量出的加工磨石74a的消耗量值與磨削輪74所承受的最大加工載重值在描點圖P1中是以三角點來表示,且是藉由以單點鏈線表示之圖形G2來表示其推移,而能夠容易掌握其推移。The tracing point diagram P1 shown in FIG. 6 is a diagram obtained by tracing the measured value obtained in Experiment 1. In the tracing point diagram P1, the horizontal axis represents the grinding wheel 74 when the workpiece W is ground by 50 μm. The consumption (μm) of the processing grindstone 74a, and the vertical axis represents the maximum processing load (N) that the grinding wheel 74 is subjected to during grinding of the workpiece W by 50 μm. In the case of grinding while irradiating ultraviolet light, the consumption value of the processing grindstone 74a and the maximum processing load value carried by the grinding wheel 74 are represented by dots in the tracing diagram P1, and are The transition is represented by a graph G1 indicated by a dotted line, so that the transition can be easily grasped. In addition, the consumption value of the processing grindstone 74a and the maximum processing load value of the grinding wheel 74 measured when the grinding is performed without irradiation with ultraviolet light are represented by triangular points in the tracing point diagram P1, Moreover, the transition is represented by a graph G2 represented by a single-dot chain line, so that the transition can be easily grasped.

正如從描點圖P1中可以讀出,在一邊對磨削輪74之加工磨石74a的下表面照射波長365nm的紫外光一邊進行被加工物W之磨削加工的情況下,相較於未照射紫外光的情況,可將加工磨石74a的消耗量及磨削輪74在磨削時所承受的載重壓低。若能夠將磨削輪74所承受的加工載重像這樣壓低,則可以減少圖1所示之磨削進給機構5的馬達52所承受的負載,或是防止因加工負載而在滾珠螺桿50中發生反衝(backlash)。再者,將磨削輪74所承受之加工載重對照相同載重而進行比較的情況下,一邊對磨削輪74之加工磨石74a的下表面照射波長365nm的紫外光一邊磨削的情況相較於未照射紫外光的情況,可以將加工磨石74a的消耗量壓低約20%。As can be read from the tracing point diagram P1, when the grinding process of the workpiece W is performed while irradiating the lower surface of the grinding wheel 74a of the grinding wheel 74 with ultraviolet light having a wavelength of 365 nm, When the ultraviolet light is irradiated, the consumption of the processing grindstone 74a and the load that the grinding wheel 74 receives during grinding can be reduced. If the machining load on the grinding wheel 74 can be reduced like this, the load on the motor 52 of the grinding feed mechanism 5 shown in FIG. 1 can be reduced, or the ball screw 50 can be prevented from being caused by the machining load. A backlash occurred. In addition, in a case where the processing load carried by the grinding wheel 74 is compared with the same load, the case of grinding while irradiating the lower surface of the grinding wheel 74a of the grinding wheel 74 with ultraviolet light having a wavelength of 365 nm is compared. In the case where the ultraviolet light is not irradiated, the consumption of the processing grindstone 74a can be reduced by about 20%.

(實施形態2) 圖7所示之切割裝置2是相對於保持在保持台20之保持面200a的被加工物W,使加工機構21所具備之切割刀片210旋轉並進行切入以實施切割加工的裝置。(Embodiment 2) The cutting device 2 shown in FIG. 7 performs a cutting process by rotating and cutting the cutting blade 210 included in the processing mechanism 21 with respect to the workpiece W held on the holding surface 200a of the holding table 20 Device.

在切割裝置2之基台2A上,配設有使保持台20在切割進給方向(X軸方向)上往返移動的切割進給機構22。切割進給機構22是由滾珠螺桿220、一對導軌221、馬達222、及可動板223所構成,該滾珠螺桿220具有X軸方向之軸心,該一對導軌221是與滾珠螺桿220平行地配設,該馬達222使滾珠螺桿220旋動,該可動板223是將內部的螺帽螺合於滾珠螺桿220且底部滑接於導軌221。然後,當馬達222使滾珠螺桿220旋動時,會伴隨於此而使可動板223被導軌221引導而在X軸方向上移動,且配設於可動板223上的保持台20也會在X軸方向上移動。A cutting feed mechanism 22 is provided on the base 2A of the cutting device 2 to move the holding table 20 back and forth in the cutting feed direction (X-axis direction). The cutting feed mechanism 22 is composed of a ball screw 220, a pair of guide rails 221, a motor 222, and a movable plate 223. The ball screw 220 has an axial center in the X-axis direction. The pair of guide rails 221 are parallel to the ball screw 220 It is provided that the motor 222 rotates the ball screw 220, and the movable plate 223 is screwed with the inner nut to the ball screw 220 and the bottom is slidably connected to the guide rail 221. Then, when the ball screw 220 is rotated by the motor 222, the movable plate 223 is guided by the guide rail 221 to move in the X-axis direction, and the holding table 20 provided on the movable plate 223 is also moved at X Move in the axis direction.

配設於可動板223上的保持台20例如其外形為圓形,且具備:吸附部200,由多孔質構件所構成,且吸附被加工物W;及框體201,支撐吸附部200。吸附部200是連通於未圖示的吸引源,並在吸附部200的露出面即保持面200a上吸引保持被加工物W。保持台20可以藉由配設於保持台20之底面側的旋轉機構202來進行旋轉。在圖示的例中,在保持台20的周圍以均等的間隔配設有4個固定夾具204。The holding table 20 disposed on the movable plate 223 has, for example, a circular shape, and includes a suction section 200 made of a porous member and sucking a workpiece W, and a frame 201 supporting the suction section 200. The suction unit 200 is connected to a suction source (not shown), and sucks and holds the workpiece W on the holding surface 200 a that is the exposed surface of the suction unit 200. The holding table 20 can be rotated by a rotation mechanism 202 provided on the bottom surface side of the holding table 20. In the illustrated example, four fixing jigs 204 are arranged around the holding table 20 at regular intervals.

從基台2A上的中央到後方側(+Y方向側),配設有使加工機構21在Y軸方向上往返移動的分度進給機構23。分度進給機構23是由滾珠螺桿230、一對導軌231、馬達232、及可動部233所構成,該滾珠螺桿230具有Y軸方向之軸心,該一對導軌231是與滾珠螺桿230平行地配設,該馬達232使滾珠螺桿230旋動,該可動部233是將內部的螺帽螺合於滾珠螺桿230且底部滑接於導軌231。然後,當馬達232使滾珠螺桿230旋動時,會伴隨於此而使可動部233被導軌231引導而在Y軸方向上移動,且加工機構21會伴隨於可動部233的移動而在Y軸方向上移動。From the center on the base 2A to the rear side (+ Y direction side), an index feed mechanism 23 is provided to move the processing mechanism 21 back and forth in the Y axis direction. The indexing feed mechanism 23 is composed of a ball screw 230, a pair of guide rails 231, a motor 232, and a movable portion 233. The ball screw 230 has an axial center in the Y-axis direction. The pair of guide rails 231 is parallel to the ball screw 230. The motor 232 is configured to rotate the ball screw 230, and the movable portion 233 is configured to screw the inner nut to the ball screw 230 and slide the bottom to the guide rail 231. When the ball screw 230 is rotated by the motor 232, the movable portion 233 is guided by the guide rail 231 to move in the Y-axis direction, and the processing mechanism 21 is moved in the Y-axis along with the movement of the movable portion 233. Move in the direction.

可動部233上一體化地豎立設置有柱部234,在柱部234之-X方向側的側面,配設有使加工機構21在Z軸方向上進行上下移動的切入進給機構24。切入進給機構24是由滾珠螺桿240、一對導軌241、馬達242、及支撐構件243所構成,該滾珠螺桿240具有Z軸方向之軸心,該一對導軌241是與滾珠螺桿240平行地配設,該馬達242使滾珠螺桿240旋動,該支撐構件243是將內部的螺帽螺合於滾珠螺桿240且側部滑接於導軌241。然後,當馬達242使滾珠螺桿240旋動時,會伴隨於此而使支撐構件243被導軌241引導而在Z軸方向上移動,以將支撐構件243所支撐的加工機構21朝Z軸方向作切入進給。The movable portion 233 is integrally provided with a pillar portion 234, and a cutting feed mechanism 24 for moving the machining mechanism 21 up and down in the Z-axis direction is provided on the side of the -X direction side of the pillar portion 234. The cut-in feed mechanism 24 is composed of a ball screw 240, a pair of guide rails 241, a motor 242, and a support member 243. The ball screw 240 has an axial center in the Z-axis direction. The pair of guide rails 241 is parallel to the ball screw 240. It is provided that the motor 242 rotates the ball screw 240, and the support member 243 is screwed with the inner nut to the ball screw 240 and the side portion is slidably connected to the guide rail 241. Then, when the ball screw 240 is rotated by the motor 242, the supporting member 243 is guided by the guide rail 241 to move in the Z-axis direction, so that the processing mechanism 21 supported by the supporting member 243 is moved in the Z-axis direction. Cut-in feed.

加工機構21具備有:主軸211,軸向是相對於保持台20的移動方向(X軸方向)在水平方向上正交的方向(Y軸方向);殼體212,將主軸211支撐成可旋轉;未圖示的馬達,容置於殼體212內部並將主軸211旋轉驅動;及切割刀片210,裝設於主軸211之-Y方向側的前端部,又,伴隨於馬達將主軸211旋轉驅動,切割刀片210也會跟著高速旋轉。The processing mechanism 21 includes a main shaft 211 whose axial direction is a direction (Y-axis direction) orthogonal to the moving direction (X-axis direction) of the holding table 20 in a horizontal direction; and a housing 212 that supports the main shaft 211 to be rotatable. A motor (not shown) housed inside the housing 212 and rotationally drives the main shaft 211; and a cutting blade 210 installed at the front end portion of the -Y direction side of the main shaft 211, and the main shaft 211 is rotationally driven by the motor The cutting blade 210 will also rotate at high speed.

在殼體212的側面配設有校準機構25,用以拍攝被加工物W以檢測使切割刀片210切入的位置。校準機構25具備有拍攝被加工物W之被切割面的校準用相機250,根據由校準用相機250所取得的圖像,可以藉由型樣匹配(pattern matching)等的圖像處理來檢測被加工物W上應切割的分割預定線S。An alignment mechanism 25 is provided on the side of the housing 212 to capture the workpiece W to detect the position where the cutting blade 210 cuts in. The calibration mechanism 25 includes a calibration camera 250 that captures the cut surface of the workpiece W. Based on the image obtained by the calibration camera 250, it is possible to detect the target by image processing such as pattern matching. A predetermined division line S to be cut on the work W.

圖8所示之切割刀片210是例如中央具備裝設孔且外形為環狀的墊圈型刀片,其整體成為加工磨石。例如,切割刀片210是以玻質、陶質的結合劑即陶瓷結合劑結合鑽石磨粒而製成,作為陶瓷結合劑,是使用例如以二氧化矽(SiO2)為主成分,並且混入有微量長石等的結合劑。切割刀片210被裝卸凸緣218與未圖示的機座凸緣從Y軸方向兩側夾住,且藉由用固定螺帽217緊固而裝設於主軸211。再者,切割刀片210也可以是將加工磨石配備成會在由鋁等所構成之基台上朝向徑向外側突出的輪殼型(hub type)切割刀片。The cutting blade 210 shown in FIG. 8 is, for example, a washer-type blade provided with a mounting hole in the center and having a ring-shaped outer shape. For example, the cutting blade 210 is made of glass and ceramic bonding agent, namely, a ceramic bonding agent and diamond abrasive grains. As a ceramic bonding agent, for example, silicon dioxide (SiO2) is used as a main component, and a small amount is mixed therein. Feldspar and other binders. The cutting blade 210 is sandwiched from both sides of the Y-axis direction by an attachment flange 218 and a base flange (not shown), and is attached to the main shaft 211 by being fastened with a fixing nut 217. In addition, the cutting blade 210 may be a hub-type cutting blade in which a processing grindstone is provided so as to protrude outward in the radial direction on a base made of aluminum or the like.

如圖7、8所示,加工機構21例如具備有覆蓋切割刀片210的刀片蓋219。刀片蓋219在其大致中央部具備有容置切割刀片210的開口,且藉由裝設於殼體212,就可以將切割刀片210定位於開口上,並從上方覆蓋切割刀片210。As shown in FIGS. 7 and 8, the processing mechanism 21 includes, for example, a blade cover 219 that covers the cutting blade 210. The blade cover 219 is provided with an opening for accommodating the cutting blade 210 in a substantially central portion thereof, and by being installed in the housing 212, the cutting blade 210 can be positioned on the opening and covers the cutting blade 210 from above.

在刀片蓋219的-X方向側端緊固有支撐塊213,該支撐塊213能夠藉由調整螺絲213a在Z軸方向上移動。在支撐塊213固定有一對加工水噴嘴214。加工水會從供給管213b通過支撐塊213而被供給至一對加工水噴嘴214。一對加工水噴嘴214是構成為會從切割刀片210的側面兩側夾住切割刀片210之下部,且互相平行地朝向+X方向側延伸。在一對加工水噴嘴214之前端側的與切割刀片210相對的位置上,在X軸方向上排列設置有複數條狹縫,且藉由複數條狹縫從側方噴射加工水,以進行切割刀片210與被加工物W之接觸部位的冷卻。又,在支撐塊213的下端,配設有將所噴射之加工水導向-X方向側的一對飛沫蓋213c。A support block 213 is fastened to the -X direction side end of the blade cover 219, and the support block 213 can be moved in the Z-axis direction by an adjusting screw 213a. A pair of processing water nozzles 214 is fixed to the support block 213. The processing water is supplied from the supply pipe 213b to the pair of processing water nozzles 214 through the support block 213. The pair of processing water nozzles 214 are configured to sandwich the lower portion of the cutting blade 210 from both sides of the side of the cutting blade 210 and extend toward the + X direction side in parallel with each other. A plurality of slits are arranged in the X-axis direction at positions facing the cutting blade 210 on the front end side of the pair of processing water nozzles 214, and processing water is sprayed from the side through the plurality of slits to perform cutting. The contact area between the blade 210 and the workpiece W is cooled. A pair of droplet covers 213c are provided at the lower end of the support block 213 to direct the sprayed processed water to the -X direction side.

在刀片蓋219的+X方向側端緊固有加工水區塊215,該加工水區塊215能夠藉由調整螺絲215a在Y軸方向上滑行移動。如圖8所示,在加工水區塊215配設有從切割刀片210的外周方向對切割刀片210噴射加工水的加工水噴嘴216。加工水噴嘴216的上端連通有供給管215b,加工水噴嘴216的下端即加工水噴射口216a朝向切割刀片210的前端面(加工面)開口。藉由加工水噴嘴216從外周方向朝切割刀片210噴射加工水,藉此將加工水捲入旋轉之切割刀片210,並連同在切割刀片210與被加工物W的接觸部位所產生之切割屑一起朝-X方向側被推出,藉此進行接觸部位的清洗及冷卻。A processing water block 215 is fastened to the + X direction side end of the blade cover 219, and the processing water block 215 can be slid in the Y-axis direction by an adjusting screw 215a. As shown in FIG. 8, a processing water nozzle 216 that sprays processing water on the cutting blade 210 from the outer peripheral direction of the cutting blade 210 is disposed in the processing water block 215. The upper end of the processing water nozzle 216 communicates with a supply pipe 215b, and the processing water spraying port 216a, which is the lower end of the processing water nozzle 216, opens toward the front end surface (processing surface) of the cutting blade 210. The processing water nozzle 216 sprays the processing water from the outer direction toward the cutting blade 210, thereby winding the processing water into the rotating cutting blade 210, together with the cutting chips generated at the contact portion between the cutting blade 210 and the workpiece W. It is pushed out toward the -X direction, thereby cleaning and cooling the contact area.

切割裝置2具備有光照射機構4,該光照射機構4會對切割刀片210的加工面(刀片的前端面)照射既定波長的光。光照射機構4例如具備有:發光部40,由例如低壓水銀燈或UVLED所構成;及電源41,切換發光部40的開啟/關閉。The cutting device 2 is provided with a light irradiation mechanism 4 which irradiates the processing surface (the front end surface of the blade) of the cutting blade 210 with light of a predetermined wavelength. The light irradiation mechanism 4 includes, for example, a light emitting section 40 composed of, for example, a low-pressure mercury lamp or a UV LED, and a power source 41 for switching on / off of the light emitting section 40.

發光部40例如是以會從徑向外側面向切割刀片210之加工面的方式配設於加工水區塊215上,且位於比加工水噴嘴216的加工水噴射口216a更高的位置。發光部40能夠發出2種波長的光,較佳為能夠發出80nm以上200nm以下之波長的光與240nm以上280nm以下之波長的光。又,發光部40更佳為能夠發出波長365nm的光。本實施形態中的發光部40為2波長LED或低壓水銀燈,能夠同時發出波長184.9nm的紫外光與波長253.7nm的紫外光。The light emitting section 40 is disposed on the processing water block 215 so as to face the processing surface of the cutting blade 210 from the radially outer side, for example, and is positioned higher than the processing water jetting port 216 a of the processing water nozzle 216. The light emitting unit 40 can emit light of two wavelengths, and preferably emits light of a wavelength of 80 nm to 200 nm and light of a wavelength of 240 nm to 280 nm. The light emitting section 40 is more preferably capable of emitting light having a wavelength of 365 nm. The light-emitting portion 40 in this embodiment is a two-wavelength LED or a low-pressure mercury lamp, and can simultaneously emit ultraviolet light having a wavelength of 184.9 nm and ultraviolet light having a wavelength of 253.7 nm.

以下,針對使用圖7所示之切割裝置2實施本發明之加工方法時的加工方法之各步驟及切割裝置2之運作來逐步說明。 圖1所示之外形為圓形板狀之被加工物W例如是由難削材料的SiC所形成的半導體晶圓,在圖7中朝向上側的被加工物W之正面Wa上,於藉由分割預定線S所劃分的格子狀區域形成有多個元件D。在被加工物W之背面Wb貼附有直徑大於被加工物W的切割膠帶T1。於切割膠帶T1的黏著面的外周區域貼附有具備圓形之開口的環狀框架F,並且被加工物W是透過切割膠帶T1而被環狀框架F所支撐,而成為可進行透過環狀框架F來執行之操作處理的狀態。再者,被加工物W的形狀及種類並無特別限定,可以根據與切割刀片210的關係來適當變更,亦包含由GaAS或GaN等所形成的晶圓,或是由金屬所形成的晶圓或金屬電極有部分露出於晶圓背面的晶圓。Hereinafter, each step of the processing method and the operation of the cutting device 2 when the processing method of the present invention is implemented using the cutting device 2 shown in FIG. 7 will be described step by step. The processed object W shown in FIG. 1 having a circular plate shape is, for example, a semiconductor wafer formed of SiC, which is a hard-to-cut material. On the front surface Wa of the processed object W, which faces the upper side in FIG. A plurality of elements D are formed in a grid-like region divided by a predetermined division line S. A cutting tape T1 having a larger diameter than the workpiece W is attached to the back surface Wb of the workpiece W. A circular frame F having a circular opening is attached to the outer peripheral area of the adhesive surface of the dicing tape T1, and the workpiece W is supported by the cyclic frame F through the dicing tape T1, and becomes a transparent loop. The status of the operation processing performed by the framework F. In addition, the shape and type of the workpiece W is not particularly limited, and may be appropriately changed according to the relationship with the dicing blade 210, and also includes a wafer formed of GaAS or GaN, or a wafer formed of a metal. Or the wafer with the metal electrode partially exposed on the back of the wafer.

(1)保持步驟 被加工物W是將切割膠帶T1側朝下而載置於保持台20的保持面200a上。然後,將由未圖示的吸引源所產生的吸引力傳達至保持面200a,藉此成為藉由保持台20吸引保持被加工物W的狀態。又,藉由各固定夾具204固定環狀框架F。(1) Holding step The workpiece W is placed on the holding surface 200 a of the holding table 20 with the dicing tape T1 side facing down. Then, the suction force generated by a suction source (not shown) is transmitted to the holding surface 200 a, and thereby the workpiece W is sucked and held by the holding table 20. The ring frame F is fixed by each fixing jig 204.

(2)加工步驟 藉由切割進給機構22將保持於保持台20之被加工物W往-X方向進給,並藉由校準機構25來檢測應使切割刀片210切入之分割預定線S在Y軸方向的坐標位置。又,藉由分度進給機構23將加工機構21往Y軸方向驅動,以進行應切割之分割預定線S與切割刀片210在Y軸方向上的對位。(2) Processing step The workpiece W held on the holding table 20 is fed in the -X direction by the cutting feed mechanism 22, and the calibration mechanism 25 is used to detect that the predetermined division line S of the cutting blade 210 should be cut in The coordinate position in the Y-axis direction. In addition, the indexing feed mechanism 23 drives the processing mechanism 21 in the Y-axis direction to perform alignment between the predetermined division line S to be cut and the cutting blade 210 in the Y-axis direction.

切入進給機構24使加工機構21往-Z方向下降,如圖9所示,將加工機構21定位於例如,切割刀片210會切過被加工物W的背面Wb而到達切割膠帶T1的既定高度位置。又,伴隨於未圖示之馬達將主軸211旋轉驅動,切割刀片210例如從-Y方向側來觀看會是繞著順時針方向高速旋轉。The cutting-in feed mechanism 24 lowers the processing mechanism 21 in the -Z direction. As shown in FIG. 9, positioning the processing mechanism 21 at, for example, the cutting blade 210 cuts through the back surface Wb of the workpiece W and reaches a predetermined height of the cutting tape T1. position. In addition, as the spindle 211 is rotationally driven by a motor (not shown), the cutting blade 210 rotates at a high speed in a clockwise direction when viewed from the -Y direction side, for example.

藉由將保持被加工物W的保持台20以既定的切割進給速度進一步朝-X方向進給,高速旋轉之切割刀片210就會切入被加工物W,並沿著分割預定線S將被加工物W切斷。又,在切割加工中,藉由加工水噴嘴214從切割刀片210的側方對切割刀片210與被加工物W的接觸部位進行加工水的噴射,以進行接觸部位的冷卻及清洗。When the holding table 20 holding the workpiece W is further fed in the -X direction at a predetermined cutting feed speed, the cutting blade 210 rotating at a high speed will cut into the workpiece W, and will be cut along the predetermined dividing line S. The processed product W is cut. In the cutting process, the processing water nozzle 214 sprays processing water from the side of the cutting blade 210 to the contact portion of the cutting blade 210 and the workpiece W to cool and clean the contact portion.

伴隨於切割加工的開始,藉由電源41使發光部40成為開啟狀態,發光部40會從切割刀片210的外周方向朝旋轉之切割刀片210的加工面照射例如波長184.9nm的紫外光與波長253.7nm的紫外光。With the start of the cutting process, the light-emitting portion 40 is turned on by the power source 41. The light-emitting portion 40 radiates, for example, ultraviolet light with a wavelength of 184.9 nm and a wavelength of 253.7 from the outer circumferential direction of the cutting blade 210 toward the processing surface of the rotating cutting blade 210. nm UV light.

此外,藉由加工水噴嘴216從切割刀片210的外周方向朝切割刀片210的加工面噴射加工水,藉此將加工水捲入照射過光的旋轉之切割刀片210的加工面,並連同在切割刀片210與被加工物W的接觸部位所產生之加工屑等一起朝-X方向側被推出,藉此進行接觸部位的冷卻及清洗。In addition, the processing water nozzle 216 sprays processing water from the outer peripheral direction of the cutting blade 210 toward the processing surface of the cutting blade 210, so that the processing water is drawn into the processing surface of the rotating cutting blade 210 irradiated with light, and together with the cutting The blade 210 is pushed out toward the −X direction side along with machining chips and the like generated at the contact portion of the workpiece W, thereby cooling and cleaning the contact portion.

藉由對即將從加工水噴嘴216被噴射加工水之前的切割刀片210之加工面照射波長184.9nm的紫外光,存在於切割刀片210之前端面與發光部40之間的空氣中之氧分子會吸收紫外光,而生成基態的氧原子。所生成之氧原子會與周圍的氧分子鍵結而生成臭氧。又,波長184.9nm的紫外光會將附著於切割刀片210之加工面的切割屑所造成的有機污染等的分子間鍵結及原子間鍵結切斷而成為激發狀態,藉此分解有機污染。此外,產生之臭氧會吸收波長253.7nm的紫外光,藉此生成激發狀態的活性氧。由於所生成之活性氧或臭氧具有高氧化力,因此會與在切割刀片210之加工面所產生之碳或氫等鍵結,而在切割刀片210之加工面形成羥基、醛基、及羧基等極性大的親水基。其結果,切割刀片210會親水化,加工水在切割刀片210之加工面上將不易變成水滴,且加工水將容易在切割刀片210之加工面展開成水膜狀。By irradiating the processing surface of the cutting blade 210 immediately before the processing water is sprayed from the processing water nozzle 216, ultraviolet light having a wavelength of 184.9 nm is absorbed, and oxygen molecules existing in the air between the front surface of the cutting blade 210 and the light emitting portion 40 are absorbed. Ultraviolet light generates oxygen atoms in the ground state. The generated oxygen atoms will bond with the surrounding oxygen molecules to generate ozone. In addition, the ultraviolet light having a wavelength of 184.9 nm cuts off intermolecular bonds and interatomic bonds caused by cutting debris attached to the processing surface of the cutting blade 210 into an excited state, thereby decomposing organic pollution. In addition, the generated ozone absorbs ultraviolet light with a wavelength of 253.7 nm, thereby generating active oxygen in an excited state. Since the generated active oxygen or ozone has high oxidizing power, it will be bonded with carbon or hydrogen generated on the processing surface of the cutting blade 210, and hydroxyl groups, aldehyde groups, and carboxyl groups will be formed on the processing surface of the cutting blade 210. Large polar hydrophilic group. As a result, the cutting blade 210 will be hydrophilized, and the processing water will not easily become water droplets on the processing surface of the cutting blade 210, and the processing water will easily spread into a water film shape on the processing surface of the cutting blade 210.

已進行親水化的切割刀片210會伴隨著從加工水噴嘴216噴射出的大量加工水切入被加工物W的背面Wb。會有更多加工水進入被加工物W之背面Wb與切割刀片210之加工面的接觸部位,藉此能夠抑制發生在接觸部位的摩擦熱之產生。The hydrophilized cutting blade 210 is cut into the back surface Wb of the workpiece W along with a large amount of processing water sprayed from the processing water nozzle 216. More processing water enters the contact portion between the back surface Wb of the workpiece W and the processing surface of the cutting blade 210, thereby suppressing the generation of frictional heat that occurs at the contact portion.

當被加工物W朝-X方向行進到切割刀片210切割完分割預定線S的X軸方向之既定位置時,會使被加工物W往-X方向的切割進給暫時停止,且使切割刀片210從被加工物W分開,並將保持台20朝+X方向進給而回到原來的位置。並且,將切割刀片210在Y軸方向上按相鄰的分割預定線S的間隔逐一分度進給並且依序進行同樣的切割,藉此切割同方向的所有的分割預定線S。此外,當使保持台20旋轉90度之後進行同樣的切割時,全部的分割預定線S就會縱橫地全部都被全切(full cut)。When the workpiece W advances in the -X direction to a predetermined position in the X-axis direction of the cutting blade 210 after the cutting is scheduled to be performed, the cutting feed of the workpiece W in the -X direction is temporarily stopped, and the cutting blade is stopped. 210 is separated from the workpiece W, and the holding table 20 is fed in the + X direction to return to the original position. Then, the cutting blade 210 is fed one by one in the Y-axis direction at intervals of the adjacent divided scheduled lines S and sequentially performs the same cutting, thereby cutting all the divided scheduled lines S in the same direction. In addition, when the same cutting is performed after the holding table 20 is rotated by 90 degrees, all of the planned division lines S are fully and horizontally cut.

本發明之被加工物的加工方法具備:保持步驟,以具有保持被加工物W之保持面200a的保持台20保持被加工物W;及加工步驟,在實施保持步驟後,以包含加工磨石,亦即切割刀片210的加工機構21來加工被加工物W,該加工磨石是以陶瓷結合劑結合磨粒而製成,又,加工步驟中,對被加工物W供給加工水,並且從光照射機構4對切割刀片210的加工面照射既定波長的光,藉此,因切割刀片210的親水化等,會使更多加工水進入被加工物W之背面Wb與切割刀片210之加工面的接觸部位,而能夠抑制發生在接觸部位的摩擦熱之產生,進而抑制切割刀片210的過度磨耗,又,能夠防止因加工熱的上升導致發生晶圓燒焦等的加工品質變差,即使被加工物W是由難削材料所形成之晶圓,亦能夠順利地進行切割。此外,可以藉由加工水高效率地將在被加工物W之背面Wb與切割刀片210之加工面的接觸部位所產生的切割屑排除。The method for processing a workpiece according to the present invention includes a holding step for holding the workpiece W with a holding table 20 having a holding surface 200a for holding the workpiece W; and a processing step for including a processing grindstone after the holding step is performed. That is, the processing mechanism 21 of the cutting blade 210 processes the workpiece W. The processing grindstone is made of a ceramic binder in combination with abrasive grains. In the processing step, processing water is supplied to the workpiece W, and from The light irradiation mechanism 4 irradiates the processing surface of the cutting blade 210 with light of a predetermined wavelength, and thereby, due to the hydrophilization of the cutting blade 210, more processing water enters the back surface Wb of the workpiece W and the processing surface of the cutting blade 210. The contact part can suppress the generation of frictional heat generated at the contact part, thereby suppressing excessive wear of the cutting blade 210, and can prevent the processing quality of the wafer from being deteriorated due to the increase in processing heat, even if it is damaged. The processed object W is a wafer formed of a hard-to-cut material, and can be cut smoothly. In addition, cutting water generated at the contact portion between the back surface Wb of the workpiece W and the processing surface of the cutting blade 210 can be efficiently removed by the processing water.

1‧‧‧磨削裝置1‧‧‧Grinding device

10‧‧‧基座10‧‧‧ base

11‧‧‧柱部11‧‧‧ pillar

12‧‧‧輸入機構12‧‧‧ import agency

2‧‧‧切割裝置2‧‧‧ cutting device

2A‧‧‧基台2A‧‧‧ abutment

20‧‧‧保持台20‧‧‧holding table

200‧‧‧吸附部200‧‧‧ Adsorption Department

200a‧‧‧保持面200a‧‧‧ holding surface

201‧‧‧框體201‧‧‧Frame

202‧‧‧旋轉機構202‧‧‧Rotating mechanism

204‧‧‧固定夾具204‧‧‧Fixed fixture

21‧‧‧加工機構21‧‧‧Processing Agency

210‧‧‧切割刀片210‧‧‧ cutting blade

211‧‧‧主軸211‧‧‧ Spindle

212‧‧‧殼體212‧‧‧shell

213‧‧‧支撐塊213‧‧‧Support block

213a‧‧‧調整螺絲213a‧‧‧Adjustment screw

213b‧‧‧供給管213b‧‧‧Supply tube

213c‧‧‧飛沫蓋213c‧‧‧Fog cover

214‧‧‧加工水噴嘴214‧‧‧Processing Water Nozzle

215‧‧‧加工水區塊215‧‧‧Processed water block

215a‧‧‧調整螺絲215a‧‧‧Adjustment screw

215b‧‧‧供給管215b‧‧‧Supply tube

216‧‧‧加工水噴嘴216‧‧‧Processing Water Nozzle

216a‧‧‧加工水噴射口216a‧‧‧Processing water jet

217‧‧‧固定螺帽217‧‧‧Fixed nut

218‧‧‧裝卸凸緣218‧‧‧ Loading flange

219‧‧‧刀片蓋219‧‧‧Blade cover

22‧‧‧切割進給機構22‧‧‧ cutting feed mechanism

220‧‧‧滾珠螺桿220‧‧‧ball screw

221‧‧‧導軌221‧‧‧rail

222‧‧‧馬達222‧‧‧Motor

223‧‧‧可動板223‧‧‧Movable plate

23‧‧‧分度進給機構23‧‧‧ indexing feed mechanism

230‧‧‧滾珠螺桿230‧‧‧ball screw

231‧‧‧導軌231‧‧‧rail

232‧‧‧馬達232‧‧‧Motor

233‧‧‧可動部233‧‧‧Mobile

234‧‧‧柱部234‧‧‧Column

24‧‧‧切入進給機構24‧‧‧cut into the feed mechanism

240‧‧‧滾珠螺桿240‧‧‧ Ball Screw

241‧‧‧導軌241‧‧‧rail

242‧‧‧馬達242‧‧‧ Motor

243‧‧‧支撐構件243‧‧‧Supporting members

25‧‧‧校準機構25‧‧‧ Calibration Agency

250‧‧‧校準用相機250‧‧‧ Calibration Camera

30‧‧‧保持台30‧‧‧holding table

300‧‧‧吸附部300‧‧‧ Adsorption Department

300a‧‧‧保持面300a‧‧‧ holding surface

301‧‧‧框體301‧‧‧Frame

31‧‧‧罩蓋31‧‧‧ cover

31a‧‧‧伸縮罩31a‧‧‧ Retractable cover

4‧‧‧光照射機構4‧‧‧light irradiation mechanism

40‧‧‧發光部40‧‧‧Lighting Department

41‧‧‧電源41‧‧‧ Power

5‧‧‧磨削進給機構5‧‧‧Grinding feed mechanism

50‧‧‧滾珠螺桿50‧‧‧ball screw

51‧‧‧導軌51‧‧‧rail

52‧‧‧馬達52‧‧‧Motor

53‧‧‧升降板53‧‧‧Elevating plate

54‧‧‧托座54‧‧‧ bracket

7‧‧‧加工機構7‧‧‧ processing agency

70‧‧‧旋轉軸70‧‧‧rotation axis

70a‧‧‧流路70a‧‧‧flow

71‧‧‧殼體71‧‧‧shell

72‧‧‧馬達72‧‧‧ Motor

73‧‧‧機座73‧‧‧base

73b‧‧‧流路73b‧‧‧flow

74‧‧‧磨削輪74‧‧‧Grinding Wheel

74a‧‧‧加工磨石74a‧‧‧millstone

74b‧‧‧輪基台74b‧‧‧ round abutment

74d‧‧‧噴射口74d‧‧‧jet port

8‧‧‧加工水供給機構8‧‧‧Processed water supply agency

80‧‧‧加工水源80‧‧‧Processed water

81‧‧‧配管81‧‧‧Piping

82‧‧‧調整閥82‧‧‧adjusting valve

9‧‧‧光照射機構9‧‧‧ light irradiation mechanism

90‧‧‧台部90‧‧‧ Taiwan

91‧‧‧發光部91‧‧‧Lighting Department

92‧‧‧洗淨水供給部92‧‧‧Washing water supply department

920‧‧‧洗淨水噴嘴920‧‧‧washing water nozzle

920a‧‧‧噴射口920a‧‧‧jet port

93‧‧‧罩蓋93‧‧‧ Cover

A‧‧‧裝卸區域A‧‧‧Loading area

B‧‧‧磨削區域B‧‧‧Grinding area

D‧‧‧元件D‧‧‧Element

E‧‧‧加工區域E‧‧‧Processing area

F‧‧‧環狀框架F‧‧‧ ring frame

G1‧‧‧圖形G1‧‧‧ Graphics

G2‧‧‧圖形G2‧‧‧ Graphics

P1‧‧‧描點圖P1‧‧‧Drawing point

S‧‧‧分割預定線S‧‧‧ divided scheduled line

T‧‧‧保護膠帶T‧‧‧protective tape

T1‧‧‧切割膠帶T1‧‧‧Cutting Tape

W‧‧‧被加工物W‧‧‧Processed

Wa‧‧‧被加工物之正面Wa‧‧‧Front of the processed object

Wb‧‧‧被加工物之背面Wb‧‧‧ The back of the object

X、Z‧‧‧軸方向X, Z‧‧‧ axis directions

+X、-X、+Y、-Y、+Z、-Z‧‧‧方向+ X, -X, + Y, -Y, + Z, -Z‧‧‧ directions

圖1是顯示磨削裝置之一例的立體圖。 圖2是顯示磨削機構、保持台及光照射機構的位置關係之一例的立體圖。 圖3是顯示將保持於保持台之被加工物以磨削磨石來磨削的狀態的端視圖。 圖4(A)是將磨削加工中的磨削輪的旋轉軌跡、由加工磨石所形成之被加工物的加工區域、光照射機構的位置關係從上方來觀看時的說明圖。圖4(B)是將加工面剛照射過光的加工磨石切入被加工物的狀態從側方來觀看時的說明圖。 圖5是局部顯示在磨削加工中對發光部上的罩蓋供給洗淨水的狀態的端視圖。 圖6是顯示實施實驗1所得到的磨削時對加工磨石之加工面照射波長365nm之紫外光的效果的描點圖。 圖7是顯示切割裝置之一例的立體圖。 圖8是顯示保持有被加工物之保持台及切割機構的截面圖。 圖9是顯示將保持於保持台之被加工物以切割機構來切割的狀態的截面圖。FIG. 1 is a perspective view showing an example of a grinding apparatus. 2 is a perspective view showing an example of a positional relationship between a grinding mechanism, a holding table, and a light irradiation mechanism. FIG. 3 is an end view showing a state in which a workpiece to be held on a holding table is ground with a grinding stone. FIG. 4 (A) is an explanatory diagram when the rotational trajectory of the grinding wheel during the grinding process, the processing area of the workpiece formed by the grinding stone, and the positional relationship of the light irradiation mechanism are viewed from above. FIG. 4 (B) is an explanatory diagram when the working grindstone which has just been irradiated with light on the working surface is cut into the object, viewed from the side. 5 is an end view partially showing a state in which washing water is supplied to a cover on a light emitting portion during a grinding process. FIG. 6 is a tracing plot showing the effect of irradiating ultraviolet light with a wavelength of 365 nm on the processing surface of the processing grindstone during grinding obtained in Experiment 1. FIG. 7 is a perspective view showing an example of a cutting device. FIG. 8 is a cross-sectional view showing a holding table and a cutting mechanism holding a workpiece. 9 is a cross-sectional view showing a state in which a workpiece to be held on a holding table is cut by a cutting mechanism.

Claims (3)

一種加工方法,是被加工物的加工方法,具備: 保持步驟,以具有保持被加工物之保持面的保持台保持被加工物;及 加工步驟,在實施該保持步驟後,以包含加工磨石之加工機構來加工被加工物,該加工磨石是以陶瓷結合劑結合磨粒而製成, 又,該加工步驟中,對被加工物供給加工水,並且從光照射機構對該加工磨石的加工面照射既定波長的光。A processing method is a method for processing a workpiece, comprising: a holding step for holding the workpiece on a holding table having a holding surface for holding the workpiece; and a processing step for carrying a grinding stone after the holding step is performed A processing mechanism for processing a workpiece, the processing grindstone is made of a ceramic binder in combination with abrasive particles, and in this processing step, processing water is supplied to the workpiece, and the processing grindstone is supplied from a light irradiation mechanism The machined surface is irradiated with light of a predetermined wavelength. 如請求項1之加工方法,其中前述加工機構具有具備前述加工磨石之切割刀片, 前述加工步驟中,以該切割刀片切割被加工物。The processing method according to claim 1, wherein the processing mechanism has a cutting blade provided with the processing grindstone, and in the processing step, the workpiece is cut with the cutting blade. 如請求項1之加工方法,其中前述加工機構具有具備前述加工磨石之磨削輪, 前述加工步驟中,以該磨削輪磨削被加工物。The processing method according to claim 1, wherein the processing mechanism includes a grinding wheel provided with the grinding stone, and in the processing step, the workpiece is ground with the grinding wheel.
TW107126613A 2017-09-05 2018-08-01 processing method TWI793147B (en)

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