TW201911457A - 用於批量移轉微半導體結構之方法 - Google Patents

用於批量移轉微半導體結構之方法 Download PDF

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TW201911457A
TW201911457A TW106125031A TW106125031A TW201911457A TW 201911457 A TW201911457 A TW 201911457A TW 106125031 A TW106125031 A TW 106125031A TW 106125031 A TW106125031 A TW 106125031A TW 201911457 A TW201911457 A TW 201911457A
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micro
semiconductor structures
semiconductor
pasting
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陳顯德
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優顯科技股份有限公司
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Priority to TW106125031A priority Critical patent/TW201911457A/zh
Priority to CN201810803304.XA priority patent/CN109309038A/zh
Priority to US16/045,072 priority patent/US20190035688A1/en
Publication of TW201911457A publication Critical patent/TW201911457A/zh

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Abstract

一種用於批量移轉微半導體結構之方法，利用選擇性的雷射剝離(selective laser lift-off,selective LLO)技術，並使批量選擇的時間點發生在選擇性雷射剝離技術，其後的轉置步驟無須預先製作凹凸圖案，避免使用習用微接觸印刷製程所衍生的技術困難。

Description

用於批量移轉微半導體結構之方法
本發明係關於一種微半導體結構之製程，特別是關於一種微半導體結構之批量移轉製程。
微發光二極體(micro LED)的產品壽命、能耗、可視角與解析度均優於軟性主動式有機發光二極體(flexible AMOLED display)，應有市場上的優勢；然而，微發光二極體在電路驅動設計、LED均勻度、巨量移轉的實務上，仍有技術門檻與限制。
傳統發光二極體(邊長超過100微米)通常在磊晶(epitaxy)製程後，通過一系列製程形成陣列排列的發光二極體晶粒，欲轉置於一承載底材上，係採用一選取頭(pick-up head)對應一晶粒的方式，自前述承載底材執行挑選與轉移。然而，在發光二極體微米化的製作中，傳統製程可能遇到幾個難題：例如，微發光二極體晶粒的邊長尺寸相對較小(如100微米以下、或以下等級)，選取頭的尺寸有微縮下限，選取頭尺寸大於發光二極體晶粒，導致無法有效拾取微發光二極體晶粒；又如，晶粒尺寸的微米化，意謂同尺寸晶圓所能成形的晶粒數量將巨量增加，傳統製程中以一對一拾取的方式，勢必無法滿足巨量移轉微發光二極體晶粒的需求，導致微發光二極體的產率極低。
業界有利用微接觸印刷(micro contact printing)技術，使聚合物材料模板上預設有巨量的凹凸圖案，用來對應所要選取的微發光二極體晶粒，以達到巨量移轉的要求。但，實務上同樣也因微發光二極體晶粒的尺寸偏小，聚合物材料模板上兩相鄰凸點(或凹點)有難以控制間距的困難，且更困難的是，即便凸點能精確選取並下壓黏取所欲移動的目標晶粒，但聚合物材料的硬度與黏性必先控制精準，盡量降低因受力變形而黏住目標晶粒之相鄰晶粒的機率。
因此，實務上急欲發展更有彈性運作的製程。
有鑑於此，本發明在提供一種用於批量移轉微半導體結構之方法，進行批量或巨量移轉微半導體結構至目標基板上，可廣泛地應用於各種微半導體結構的批量或巨量移轉領域。
有鑑於此，本發明在提供一種用於批量移轉微半導體結構之方法，可選擇性雷射剝除(laser lift-off,LLO)微半導體結構，以進行批量或巨量移轉。
為此，本發明提出一種用於批量移轉微半導體結構之方法，包括下列步驟：於一半導體器件上貼附一黏著材；其中，該半導體器件包括一原生基板、以及由該原生基板成長之陣列式微半導體結構，該等陣列式微半導體結構係定義複數個微半導體結構以陣列排列所構成；自該原生基板選擇性地剝離該等陣列式微半導體結構之一部分，使被批量選擇之陣列式微半導體結構於該原生基板離開後仍留置於該黏著材；以及提供一黏貼裝置，將該批量之陣列式微半導體結構，移轉至一目標基板。
20、60‧‧‧半導體器件
22、62‧‧‧原生基板
24、64‧‧‧陣列式微半導體結構
240、640‧‧‧結構層
242、642‧‧‧微半導體半結構
244、644‧‧‧電極
242s、642s‧‧‧第一表面
244s、644s‧‧‧第二表面
30、70‧‧‧黏著材
32‧‧‧黏著層
34‧‧‧底材
40、40a、40b、40c‧‧‧黏貼裝置
42、42a、42b、42c‧‧‧黏貼表面
50、50a、90‧‧‧目標基板
52、52a‧‧‧薄膜基板
54、54a、94‧‧‧導電部
S10、S12、S14、S16、S20、S30、S40‧‧‧步驟
圖1A、1B、1C為本發明之用於批量移轉微半導體結構之方法之第一、第二、第三實施例流程圖；圖2A至圖2I為圖1A之製程示意圖； 圖3A至圖3G為圖1A之另一製程示意圖；圖4A至圖4B為圖1A之又一製程示意圖；圖5A為圖1A之再一製程示意圖；圖6A至圖6B為圖1B之局部製程示意圖；以及圖7A至圖7B、圖8A至圖8D為圖1C之製程示意圖。
本發明關於一種用於批量移轉微半導體結構之方法，可允許陣列式排列之微尺度結構/器件，並進行批量拾取並整合至非原生基板上，而不發生對結構/器件自身之損壞。以下茲配合圖式、圖號說明、元件符號，詳細介紹本發明之具體實施例如后；在圖式中，類似元件符號大體上指示相同、功能上類似及/或結構上類似的元件；此外，元件符號僅供對元件、流程、步驟等說明之用，而對元件之間的順序、上下層關係的限定，除非以文內定義，否則僅供例示與說明。
如本文所使用「半導體結構」、「半導體器件」同義使用且廣泛地係指一半導體材料、晶粒、結構、器件、一器件之組件、或一半成品。所使用「微」半導體結構、「微」半導體器件係同義使用且泛指微尺度。半導體元件包含高品質單晶半導體及多晶半導體、經由高溫處理而製造之半導體材料、摻雜半導體材料、有機及無機半導體，以及具有一或多個額外半導體組件或非半導體組件之組合半導體材料及結構(諸如，介電層或材料，或導電層或材料)。半導體元件包含(但不限於)電晶體、包含太陽能電池之光伏打器件、二極體、發光二極體、雷射、p~n接面、光電二極體、積體電路及感測器之半導體器件及器件組件。此外，半導體元件可指形成一 功能性半導體器件或產品之一部件或部分。
如本文中所使用之「目標基板」指用於接收「微半導體結構」之非原生基板。原生基板或非原生基板之材料的實施例包含聚合物、塑膠、樹脂、聚醯亞胺、聚萘二甲酸乙二酯、聚對苯二甲酸伸乙基酯、金屬、金屬箔、玻璃、可撓性玻璃、半導體、藍寶石、或薄膜電晶體(thin film transistor,TFT)等等。
為便於理解與說明，本文所使用「微半導體結構」以微發光二極體晶粒、或為完成至少一磊晶層並已受定義之複數個微半導體結構之半成品為例；「半導體器件」包含「微半導體結構」、以及可供成長「微半導體結構」之晶圓。如本文中所使用之「目標基板」以薄膜電晶體為例。
[第一實施例]
圖1A、圖2A至圖2I、圖3A至圖3G、圖6A至圖6B所示者，為本發明之用於批量移轉微半導體結構之方法，其主要概念之流程圖及大部分的製程示意圖。
請先參閱圖2B，一半導體器件20包括一原生基板22、以及由原生基板22成長之陣列式微半導體結構24。該等陣列式微半導體結構24係定義為：複數個微半導體結構24，其以陣列排列所構成；各該半導體結構24係具有至少一電極244。或，該等陣列式微半導體結構24，亦可以為製程完整且個別獨立之複數個微發光二極體晶粒。
如圖1A所示，本發明用於批量移轉微半導體結構之方法至少包括步驟S30、步驟S40、與步驟S50。
步驟S20：參閱圖2A與圖2B，於一半導體器件20上貼附一黏 著材30。其中，黏著材30之實施，將因自身材料特性、微發光二極體種類、或移除原生基板22的方式不同而異。通常，黏著材30包括一底材34、及設於底材34上之一黏著層32，黏著層32為光解離膠；唯，此黏著材30所包含元件及其態樣，僅為例示而非限制。
步驟S30：參閱圖2C，自該原生基板22選擇性地剝離該等陣列式微半導體結構24的一部分，本實施例係採雷射剝離技術進行選擇性剝離；此外，選擇性批量剝離的圖樣，通常對應至一目標基板50(參閱圖2I)上的圖樣設計。此時，因批量選擇的時間點發生在雷射剝離步驟，其後的黏貼裝置40是否預先製作凹凸圖案則不影響後續的批量移轉；換句話說，沿用習用微接觸印刷的凹凸圖案亦非為本發明所排除。惟，若採用未預設凹凸圖案之均一平整的印刷面，將能進一步避免採用凹凸圖案印刷所遭遇的技術障礙。參閱圖2D，移動半導體器件20，使被批量選擇之陣列式微半導體結構24於原生基板22離開後，仍留置於黏著材30。此時的半導體器件20，原生基板22尚留有未被批量選擇的微半導體結構24，此等未被批量選擇之陣列式微半導體結構，亦隨著原生基板22離開黏著材30，而脫離黏著材30。
步驟S40：參閱圖2E至圖2H，提供一黏貼裝置40，將該等被批量選擇之陣列式微半導體結構24，移轉至目標基板50；本實施例中，黏貼裝置40可具有保持均一平整之一黏貼表面42。參閱圖2E，黏貼裝置40係為一黏貼平面，黏貼表面42形成於黏貼平面；黏貼平面沿著垂直黏著材30的方向，朝黏著材30移動，以黏貼該等被批量選擇之陣列式微半導體結構24。參閱圖2F，照射紫外光，以熟化(curing)具有光解離膠之黏著材30，降低黏著材30與該等被批量選擇之陣列式微半導體結構24之間之黏性。參閱 圖2G，黏貼裝置40帶著該批量之陣列式微半導體結構24，沿垂直黏著材30的方向，脫離黏著材30。參閱圖2H，黏貼裝置40將該批量之陣列式微半導體結構24，移轉至目標基板50；通常，目標基板50至少定義有一薄膜基板52、以及於薄膜基板52上之複數個導電部54；導電部54可為金屬電極、可預熔而具黏著性，或導電部54可為進一步包含在金屬電極上預設之焊料或類似功效之黏著材料；惟，導電部54之實施態樣僅為例示而非拘束本發明。參閱圖2I，透過目標基板50之該等導電部54與該等被批量選擇之陣列式微半導體結構24的電極244彼此黏著，於該等被批量選擇之陣列式微半導體結構24定位於目標基板50之時或之後，移除黏貼裝置40。
參照圖4A至圖4B，黏貼裝置的另一實施態樣為至少一黏貼滾輪40b，一黏貼表面42b形成於黏貼滾輪40b，並由黏貼滾輪40b將該批量之陣列式微半導體結構24定位於目標基板50。
參照圖5A，黏貼裝置仍為一黏貼平面40c，黏貼表面42c形成於黏貼平面40c，黏貼平面40c將該批量之陣列式微半導體結構24定位於目標基板50後，係以具有角度的撕除方式移除黏貼平面40c。同理，黏貼平面40c亦能夠以具有角度的方式，黏貼該批量之陣列式微半導體結構24。
同時參照圖1A、圖3A至圖3G，用來說明尚留有未被批量選擇的微半導體結構24之同一半導體器件20，可再次進行步驟S20、S30、S40。
步驟S20：參閱圖3A，同一半導體器件20上，由原生基板22選擇性地剝離該等陣列式微半導體結構24的一部或全部。
步驟S30：參閱圖3B，選擇性剝離的圖樣，可對應至同一目標基板50、或另一目標基板。假若圖3B步驟，係剝離未被批量選擇微半導 體結構24的全部，此時將原生基板22已可單獨且完全移除，參閱圖3C。
步驟S40：參閱圖3D至圖3G，提供黏貼裝置，可選用同一黏貼裝置40，或新的黏貼裝置40a，將該批量之陣列式微半導體結構24，移轉至目標基板；目標基板可為圖2H、圖2I中的原目標基板50、或另一目標基板50a，目標基板50a定義有類似原目標基板50之一薄膜基板52a、以及於薄膜基板52a上之複數個導電部54a。黏貼裝置40a同樣保持均一平整之一黏貼表面42。參閱圖3D，黏貼裝置40a黏貼留置於黏著材30上的陣列式微半導體結構24。參閱圖3E，紫外光熟化具光解離膠之黏著材30，降低黏著材30與陣列式微半導體結構24之間的黏性。參閱圖3F，黏貼裝置40a帶著該批量之陣列式微半導體結構24，脫離黏著材30。參閱圖3G，黏貼裝置40a將該批量之陣列式微半導體結構24，移轉並定位至目標基板50a後，移除黏貼裝置40a。
[第二實施例]
圖1B、圖6A與圖6B所示者為圖1A之流程再細化說明；指示上相同、功能上類似之步驟與元件採用相同標號。
本實施例中，步驟S20之前，尚包括步驟S10：置備半導體器件20。
步驟S10，至少包括二步驟：步驟S12、S14。步驟S12提供有成長一結構層240之原生基板22(如圖6A)；步驟S14於該結構層240進行後續製程，以完成陣列排列於原生基板22上之複數微半導體結構24(如圖6B)。結構層240的製備到完成複數微半導體結構24的全部過程，可不必連續實施；換句話說，步驟S12、S14，或可間斷、穿插、接續其他製程，只要達到可製備陣列排列的微半導體結構24即可。結構層240與陣列式微半導體結 構24具有定義相同之第一表面242s與第二表面244s。該等陣列式微半導體結構24之第一表面242s由微半導體半結構242所定義，該等陣列式微半導體結構24以第一表面242s附著至原生基板22；該等陣列式微半導體結構24之第二表面244s相對第一表面242s、而由電極244所定義。
[第三實施例]
圖1C、圖7A與圖7B、圖8A至圖8D所示者為本發明之第三實施例，因微半導體結構的電極不同而有如下置備態樣；為便於更理解本實施例，微半導體結構的電極以垂直式電極為例。指示上相同、功能上類似第二實施例之其他步驟採用相同標號。
步驟S10中至少包括步驟S12、S14、S16。
步驟S12，提供有成長一結構層640之原生基板62(如圖7A)。
步驟S14，於結構層640進行後續製程，以完成陣列排列於原生基板62上之複數微半導體結構64；其中，陣列式微半導體結構64的上下電極644僅具備其一。該等陣列式微半導體結構64之第一表面642s由微半導體半結構642所定義，該等陣列式微半導體結構64以第一表面642s附著至原生基板62；該等陣列式微半導體結構64之第二表面644s相對第一表面642s、而由電極644所定義(如圖7B)。
並於步驟S20中，以具備電極644之一端貼附黏著材70(如圖8A)；選擇性剝離批量之陣列式微半導體結構64(如圖8B)。
在步驟S40後，該批量之陣列式微半導體結構64移轉至一目標基板900，目標基板90佈設有複數個導電部94，各該微半導體結構64僅以前述單一電極644與目標基板90之導電部94相接(如圖8C)。
步驟S16：於該批量之陣列式微半導體結構64置備另外一電極644(如圖8D)。
本文中的「批量移轉」，係可選擇至少一排之至少部分的微半導體結構24、64進行移轉；或選擇複數排微半導體結構24、64進行移轉；或選擇一排微半導體結構24、64中的一部分的微半導體結構24、64進行移轉；或選擇複數排微半導體結構24、64中的一部分的微半導體結構24、64進行移轉；或前述任何組合與變化。同樣地，「批量拾取」通常視目標基板50、50a的設計需求而決定，本文例示係便於說明，而非拘束對「批量拾取」的解釋。
上述實施例及其流程，均可互相拆解錯置或替換或混合實施；並在製程條件允許的情況下，一併實施。
是以，本發明可通過主步驟的替換、或拆解/替換次步驟、或調整至少一次步驟在其他主步驟內的實施順序，在製程條件允許的情況下，以此概念排列組合。
藉此，採用本發明之用於批量移轉微半導體結構之方法，以有效、與有效率地允許進行批量或巨量拾取微半導體結構24、64(微尺度結構/器件)之陣列選擇及整合於目標基板50、50a、90(非原生基板)上。不僅可應用於不同的微發光二極體晶粒或器件或半成品，更能廣泛地應用於各種微半導體結構的批量或巨量移轉領域。
綜上所述，在本發明之用於批量移轉微半導體結構之方法，其功效包含，但不侷限本發明：
1、使批量選擇的時間點發生在雷射剝離步驟，可不拘束其 後的黏貼裝置是否需要預先製作凹凸圖案，使製程本身更具有調配彈性。
2、使批量選擇的時間點發生在雷射剝離步驟，可使其後的黏貼裝置無須預先製作凹凸圖案，避免使用習用微接觸印刷製程所衍生的技術困難。
3、允許此等超薄、易碎及/或小型器件之選擇及應用而不導致對器件自身之損壞。
4、達到有效且有效率地，進行批量或巨量移轉微半導體結構至目標基板上。
5、減少組裝成本及增大產量，可廣泛地應用於各種微半導體結構的批量或巨量移轉領域。
以上所述僅為舉例性，而非為限制性者。任何未脫離本發明之精神與範疇，而對其進行之等效修改或變更，均應包含於後附之申請專利範圍中。

Claims (12)

  1. 一種用於批量移轉微半導體結構之方法，包括：於一半導體器件上貼附一黏著材；其中，該半導體器件包括一原生基板、以及由該原生基板成長之陣列式微半導體結構，該等陣列式微半導體結構係定義複數個微半導體結構以陣列排列所構成；自該原生基板選擇性地剝離該等陣列式微半導體結構之一部分，使被批量選擇之陣列式微半導體結構於該原生基板離開後仍留置於該黏著材；以及提供一黏貼裝置，將該批量之陣列式微半導體結構，移轉至一目標基板。
  2. 如申請專利範圍第1項所述的批量移轉微半導體結構之方法，其中：由該原生基板選擇性地剝離之該等陣列式微半導體結構之一部分之步驟中或後：未被批量選擇之陣列式微半導體結構，隨該原生基板離開該黏著材。
  3. 如申請專利範圍第1項所述的批量移轉微半導體結構之方法，其中：自該原生基板選擇性地剝離之該等陣列式微半導體結構之一部分之步驟中：以雷射剝離技術於該原生基板選擇性地剝離該等陣列式微半導體結構之一部分。
  4. 如申請專利範圍第1項所述的批量移轉微半導體結構之方法，其中：該黏貼裝置具有保持均一平整之一黏貼表面。
  5. 如申請專利範圍第4項所述的批量移轉微半導體結構之方法，其中： 該黏貼裝置包括一黏貼平面；該黏貼表面形成於該黏貼平面。
  6. 如申請專利範圍第4項所述的批量移轉微半導體結構之方法，其中：該黏貼裝置包括至少一黏貼滾輪；該黏貼表面形成於該黏貼滾輪。
  7. 如申請專利範圍第3項所述的批量移轉微半導體結構之方法，其中：該黏貼裝置具有保持均一平整之一黏貼表面。
  8. 如申請專利範圍第7項所述的批量移轉微半導體結構之方法，其中：該黏貼裝置包括一黏貼平面；該黏貼表面形成於該黏貼平面。
  9. 如申請專利範圍第7項所述的批量移轉微半導體結構之方法，其中：該黏貼裝置包括至少一黏貼滾輪；該黏貼表面形成於該黏貼滾輪。
  10. 如申請專利範圍第1至9項中任一項所述的批量移轉微半導體結構之方法，其中：貼附該黏著材至該半導體器件之步驟前，更包括：於該原生基板上成長之該等陣列式微半導體結構，為完成至少一磊晶層並已受定義之複數個微半導體結構。
  11. 如申請專利範圍第10項中所述的批量移轉微半導體結構之方法，其中：該黏貼裝置移轉該批量之陣列式微半導體結構之步驟前或中或同時或後，更包括：於該目標基板上之該批量之陣列式微半導體結構，為水平式電極之微發光二極體晶粒。
  12. 如申請專利範圍第10項中所述的批量移轉微半導體結構之方法，其中：該黏貼裝置移轉該批量之陣列式微半導體結構之步驟前或中或同時或後，更包括： 於該目標基板上之該批量之陣列式微半導體結構，為垂直式電極之微發光二極體晶粒。
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