TW201908061A - Abrasive cloth - Google Patents
Abrasive cloth Download PDFInfo
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- TW201908061A TW201908061A TW107125084A TW107125084A TW201908061A TW 201908061 A TW201908061 A TW 201908061A TW 107125084 A TW107125084 A TW 107125084A TW 107125084 A TW107125084 A TW 107125084A TW 201908061 A TW201908061 A TW 201908061A
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- Prior art keywords
- polishing
- polishing cloth
- thickness direction
- forming material
- cloth
- Prior art date
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- 239000004744 fabric Substances 0.000 title claims abstract description 68
- 238000005498 polishing Methods 0.000 claims abstract description 80
- 239000000463 material Substances 0.000 claims abstract description 49
- 229920005989 resin Polymers 0.000 claims abstract description 9
- 239000011347 resin Substances 0.000 claims abstract description 9
- 239000004745 nonwoven fabric Substances 0.000 claims description 21
- 230000000052 comparative effect Effects 0.000 description 12
- 238000005470 impregnation Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 9
- 238000005259 measurement Methods 0.000 description 8
- 229920005749 polyurethane resin Polymers 0.000 description 8
- 239000011800 void material Substances 0.000 description 7
- 239000007788 liquid Substances 0.000 description 6
- 239000003960 organic solvent Substances 0.000 description 6
- 238000001878 scanning electron micrograph Methods 0.000 description 5
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000003381 stabilizer Substances 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- UZXWDKGGOMPAEZ-UHFFFAOYSA-N 2-propan-2-ylideneoxolane Chemical compound CC(C)=C1CCCO1 UZXWDKGGOMPAEZ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000002591 computed tomography Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- D—TEXTILES; PAPER
- D06—TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
- D06M—TREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
- D06M15/00—Treating fibres, threads, yarns, fabrics, or fibrous goods made from such materials, with macromolecular compounds; Such treatment combined with mechanical treatment
- D06M15/19—Treating fibres, threads, yarns, fabrics, or fibrous goods made from such materials, with macromolecular compounds; Such treatment combined with mechanical treatment with synthetic macromolecular compounds
- D06M15/37—Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
- D06M15/564—Polyureas, polyurethanes or other polymers having ureide or urethane links; Precondensation products forming them
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Textile Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Treatments For Attaching Organic Compounds To Fibrous Goods (AREA)
- Polishing Bodies And Polishing Tools (AREA)
Abstract
Description
本發明係關於一種研磨布。The present invention relates to an abrasive cloth.
先前為了對矽晶圓等被研磨物進行研磨，業界一直使用具備不織布、及含浸於該不織布中之樹脂作為形成材料之研磨布(例如專利文獻1)。In the past, in order to polish an object to be polished such as a silicon wafer, the industry has been using an abrasive cloth provided with a nonwoven fabric and a resin impregnated with the nonwoven fabric as a forming material (for example, Patent Document 1).
此處，已知有研磨布中會產生端部塌邊。 若增加樹脂之含浸量使研磨布變硬則可防止端部塌邊，但於該情形時，形成研磨布之形成材料之存在比率於研磨面中提高。 於被研磨物之研磨時，不存在形成材料之部分(空隙)成為切屑之收容空間，故而若過度增加樹脂之含浸量，則容易產生堵塞。 [先前技術文獻] [專利文獻]Here, it is known that an end sag occurs in an abrasive cloth. Increasing the amount of resin impregnated to harden the abrasive cloth can prevent the edge from slumping. However, in this case, the existence ratio of the forming material forming the abrasive cloth is increased in the abrasive surface. During the grinding of the object to be polished, there is no space (space) where the material is formed as a storage space for chips. Therefore, if the impregnation amount of the resin is excessively increased, clogging is likely to occur. [Prior Art Literature] [Patent Literature]
[專利文獻1]日本專利特開2006-43811號公報[Patent Document 1] Japanese Patent Laid-Open No. 2006-43811
[發明所欲解決之問題][Problems to be solved by the invention]
因此，本發明係鑒於上述問題，課題在於提供一種能夠抑制堵塞及端部塌邊之研磨布。 [解決問題之技術手段]Accordingly, the present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a polishing cloth capable of suppressing clogging and edge sag. [Technical means to solve the problem]
本發明之研磨布係具備不織布、及含浸於該不織布中之樹脂作為形成材料者，且 自厚度方向中央部至一表面之上述形成材料之存在比率為30～60%，且上述厚度方向上之上述存在比率之最大值與最小值之差為10%以下。The abrasive cloth of the present invention includes a non-woven cloth and a resin impregnated with the non-woven cloth as a forming material, and the existence ratio of the above-mentioned forming material from the central portion to a surface in the thickness direction is 30 to 60%, and The difference between the maximum value and the minimum value of the existence ratio is 10% or less.
以下，一面參照隨附圖式一面對本發明之一實施形態進行說明。Hereinafter, one embodiment of the present invention will be described with reference to the accompanying drawings.
本實施形態之研磨布具備不織布、及含浸於該不織布中之樹脂作為形成材料。 又，於本實施形態之研磨布中，重要的是自厚度方向中央部至一表面之上述形成材料之存在比率為30～60%，且上述厚度方向上之上述存在比率之最大值與最小值之差為10%以下。 上述自厚度方向中央部至一表面之上述形成材料之存在比率為30～60%。 再者，上述一表面成為研磨面。The polishing cloth of this embodiment includes a nonwoven fabric and a resin impregnated with the nonwoven fabric as a forming material. Moreover, in the polishing cloth of this embodiment, it is important that the existence ratio of the above-mentioned forming material from the central portion in the thickness direction to one surface is 30 to 60%, and that the maximum and minimum values of the above-mentioned existence ratio in the thickness direction are The difference is less than 10%. The existence ratio of the forming material from the central portion in the thickness direction to one surface is 30 to 60%. In addition, the aforementioned one surface becomes a polished surface.
「自厚度方向中央部至一表面之形成材料之存在比率」、及「上述厚度方向上形成材料之存在比率之最大值與最小值之差」可以如下方式求出。 即，自一表面至厚度方向中央部每100 μm進行剖面觀察，測定各剖面中之形成材料之存在比率。 然後，將測得之形成材料之存在比率之算術平均值設為「自厚度方向中央部至一表面之形成材料之存在比率」，將測得之形成材料之存在比率中之最大值減去最小值所得之值設為「上述厚度方向上形成材料之存在比率之最大值與最小值之差」。 再者，所謂各剖面中之形成材料之存在比率意指於各剖面之觀察部分中，將觀察部分之整個面積設為100%時之存在形成材料之部分之面積比率。 又，上述厚度方向上之上述存在比率之最大值與最小值之差可為0.0%，亦可為0.1～10%。The "existing ratio of the forming material from the central portion to the one surface in the thickness direction" and the "difference between the maximum value and the minimum value of the existing ratio of the forming material in the thickness direction" can be determined as follows. That is, cross-section observation was performed every 100 μm from one surface to the central portion in the thickness direction, and the existence ratio of the forming material in each cross-section was measured. Then, the arithmetic mean value of the measured existence ratio of the forming material is set to "the existence ratio of the forming material from the center of the thickness direction to a surface", and the maximum value of the measured existence ratio of the forming material is subtracted from the minimum The value obtained is set to "the difference between the maximum value and the minimum value of the existence ratio of the forming material in the thickness direction". In addition, the existence ratio of the forming material in each section means the area ratio of the portion where the forming material is present when the entire area of the observation portion is set to 100% in the observation portion of each section. The difference between the maximum value and the minimum value of the existence ratio in the thickness direction may be 0.0%, or may be 0.1 to 10%.
於上述測定中，藉由CT掃描(Computerized Tomography-scan，電腦化斷層掃描)對研磨布進行拍攝。 具體而言，自研磨布之一表面至厚度方向中央部每100 μm獲取剖面圖像。然後，於剖面圖像中，藉由進行分類為空隙與空隙以外之部分(存在形成材料之部分)之二值化處理，測定各剖面中之上述形成材料之存在比率(面積比率)。 作為CT裝置，可使用Yamato Scientific股份有限公司製造之三維計測X射線CT裝置(TDM1000H-1)。 又，作為CT圖像處理軟體，可使用Volumegraphics股份有限公司製造之圖像處理軟體VGStudio Max 2.1。 進而，作為算出形成材料之存在比率(面積比率)之圖像解析軟體，可使用三谷商事股份有限公司製造之WinRoof。 所觀察之各剖面之面積可設為1,300 μm×1,300 μm。In the above measurement, the abrasive cloth was photographed by a CT scan (Computerized Tomography-scan). Specifically, a cross-sectional image is acquired every 100 μm from one surface of the polishing cloth to the central portion in the thickness direction. Then, in the cross-sectional image, the existence ratio (area ratio) of the above-mentioned forming material in each cross-section is measured by binarizing the void and a portion other than the void (a portion where the forming material exists). As the CT device, a three-dimensional measuring X-ray CT device (TDM1000H-1) manufactured by Yamato Scientific Co., Ltd. can be used. As the CT image processing software, VGStudio Max 2.1, an image processing software manufactured by Volumegraphics Corporation, can be used. Furthermore, as the image analysis software for calculating the existence ratio (area ratio) of the forming material, WinRoof manufactured by Mitani Corporation is used. The area of each observed section can be set to 1,300 μm × 1,300 μm.
例如於如下之條件下測定各剖面中之上述形成材料之存在比率(面積比率)。For example, the presence ratio (area ratio) of the above-mentioned forming material in each cross section is measured under the following conditions.
於上述測定中，以下述視野之大小連續測定研磨布之剖面。 視野之大小(縱×橫×高)：2,000 μm×2,000 μm×厚度方向整個區域 又，上述測定之條件如下所述。 每1旋轉之視圖數：1500 幀數/視圖：10 X射線管電壓[KV]：25.000 擴大軸位置[mm]：10.000 再構成之像素尺寸X[mm]：0.003880 再構成之像素尺寸Y[mm]：0.003880 再構成之像素尺寸Z[mm]：0.003880In the above measurement, the cross section of the polishing cloth was continuously measured with the size of the following visual field. The size of the visual field (vertical × horizontal × height): 2,000 μm × 2,000 μm × the entire area in the thickness direction. The conditions for the above measurement are as follows. Number of views per 1 rotation: 1500 frames / view: 10 X-ray tube voltage [KV]: 25.000 Enlarged axis position [mm]: 10.000 reconstituted pixel size X [mm]: 0.003880 reconstituted pixel size Y [mm ]: 0.003880 pixel size Z [mm]: 0.003880
根據由上述測定所獲得之圖像決定研磨布之厚度方向中央之方法如下所述。 首先，於CT圖像處理軟體「VGStudio Max」上使用座標標記功能(Volume座標系模式)，對於研磨布，以單位mm表示X軸方向、Y軸方向及Z軸方向各自之座標值。 其次，使用對位(registration)功能，以使研磨布之厚度方向與X、Y、及Z軸之任一方向一致之方式調整上述軟體之斜度。 然後，根據研磨布之一表面之厚度方向之座標值與另一表面之厚度方向之座標值，求出厚度方向之座標值之平均值，藉此決定研磨布之厚度方向中央之位置。The method for determining the center in the thickness direction of the polishing cloth based on the image obtained from the above measurement is as follows. First, use the coordinate mark function (Volume coordinate system mode) on the CT image processing software "VGStudio Max". For the polishing cloth, the coordinate values of the X-axis direction, Y-axis direction, and Z-axis direction are expressed in units of mm. Secondly, the registration function is used to adjust the slope of the software in such a way that the thickness direction of the polishing cloth is consistent with any of the X, Y, and Z axes. Then, the average value of the coordinate values in the thickness direction is obtained according to the coordinate values in the thickness direction of one surface of the polishing cloth and the coordinate values in the thickness direction of the other surface, thereby determining the center position in the thickness direction of the polishing cloth.
於剖面圖像中，分類為空隙與空隙以外之部分(存在形成材料之部分)之二值化處理如下所述。 於二值化處理時，為了分類為空隙與空隙以外之部分(存在形成材料之部分)，VGStudio Max中，對於剖面圖像進行對比度之調整。 對比度之調整係以Ramp模式進行。 於對比度之調整時，使空隙與空隙以外之部分(存在形成材料之部分)之差異變得明確。 VGStudio Max中，將對比度之調整記作「不透明度調整」。 具體而言，於VGStudio Max之不透明度調整之畫面，將灰值之下限值設定為波峰，其次，將灰值之上限值設定為「該波峰之峰值＋100±5」之範圍。再者，根據材料而透光率有所不同，故而對比度之調整範圍未必限定於此。In the cross-sectional image, the binarization process classified into a void and a portion other than the void (a portion where a forming material is present) is as follows. In the binarization process, in order to classify voids and parts other than voids (parts where a material is formed), VGStudio Max adjusts the contrast of cross-sectional images. The contrast is adjusted in the Ramp mode. When adjusting the contrast, the difference between the void and a portion other than the void (a portion where a material is formed) is made clear. In VGStudio Max, the adjustment of contrast is referred to as "opacity adjustment". Specifically, in the opacity adjustment screen of VGStudio Max, the lower limit of the gray value is set to the peak, and the upper limit of the gray value is set to the range of "the peak value of the peak + 100 ± 5". Moreover, the light transmittance varies depending on the material, so the adjustment range of the contrast is not necessarily limited to this.
對於上述對比度經調整之2D圖像，自研磨布之一表面至厚度方向中央部每100 μm獲取剖面圖像。For the above-mentioned contrast-adjusted 2D image, a cross-sectional image was obtained every 100 μm from one surface of the polishing cloth to the central portion in the thickness direction.
其次，對於上述獲取之每100 μm之剖面圖像，利用WinRoof測定材料存在率。 將WinRoof之測定範圍設為「1,300 μm×1,300 μm」，將「於各剖面之觀察部分中將觀察部分之整個面積設為100%時之存在形成材料之部分之面積比率」設為「各剖面中之形成材料之存在比率」。 再者，於WinRoof之二值化處理時，將灰度範圍成為「127」～「255」之範圍之部分設為空隙以外之部分(存在形成材料之部分)。Secondly, for the 100 μm cross-sectional image obtained above, the material existence rate was measured using WinRoof. The measurement range of WinRoof is set to "1,300 μm × 1,300 μm", and "the ratio of the area of the portion where the material is formed when the entire area of the observation portion is set to 100% in the observation portion of each section" is set to "each section The existence ratio of the forming materials in. " Moreover, in the binarization process of WinRoof, the part where the gray-scale range is the range of "127"-"255" is made into the part other than a space | gap (the part where a formation material exists).
再者，關於存在比率，雖針對一面進行敍述，但針對另一面，較佳為成為與該一面相同之存在比率。 即，於本實施形態之研磨布中，較佳為自厚度方向中央部至另一表面之上述形成材料之存在比率為30～60%，且上述厚度方向之上述存在比率之最大值與最小值之差為10%以下。In addition, although the presence ratio is described on one side, it is preferable that the presence ratio is the same as the presence ratio on the other side. That is, in the polishing cloth of this embodiment, it is preferable that the existence ratio of the above-mentioned forming material from the central portion in the thickness direction to the other surface is 30 to 60%, and that the maximum and minimum values of the above-mentioned existence ratio in the thickness direction are The difference is less than 10%.
本實施形態之研磨布之Asker-C硬度較佳為80以上，更佳為85～95。 本實施形態之研磨布藉由使Asker-C硬度為80以上，具有可抑制被研磨物(例如晶圓等)之端部塌邊之優點。又，本實施形態之研磨布藉由使Asker-C硬度為95以下，具有可抑制被研磨物之缺陷(例如損傷等)之優點。 再者，Asker-C硬度意指根據SRIS0101(日本橡膠協會標準規格)之規定所測得之值。又，Asker-C硬度係於上述一表面進行測定。換言之，Asker-C硬度係於研磨面進行測定。The Asker-C hardness of the polishing cloth of this embodiment is preferably 80 or more, and more preferably 85 to 95. The polishing cloth of this embodiment has the advantage that the end of the to-be-polished object (for example, a wafer) can be suppressed by making the Asker-C hardness 80 or more. In addition, the polishing cloth of this embodiment has an advantage that the Asker-C hardness is 95 or less, which can suppress defects (such as damage) of the object to be polished. In addition, the Asker-C hardness means a value measured in accordance with SRIS0101 (Japanese Rubber Association Standard Specification). The Asker-C hardness was measured on the one surface. In other words, the Asker-C hardness is measured on the polished surface.
本實施形態之研磨布之厚度較佳為0.8～2.0 mm，更佳為1.0～1.5 mm。 本實施形態之研磨布藉由使厚度為0.8 mm以上，具有容易緩和因研磨機壓盤之狀態而對研磨性能造成之不良影響之優點。又，藉此，亦具有例如容易使被研磨物穩定平坦之優點。 又，本實施形態之研磨布藉由使厚度為2.0 mm以下，具有可減少研磨時之研磨布之變形量，其結果為，可抑制被研磨物之端部塌邊之優點。The thickness of the polishing cloth of this embodiment is preferably 0.8 to 2.0 mm, and more preferably 1.0 to 1.5 mm. The polishing cloth of this embodiment has the advantage of easily alleviating the adverse effect on the polishing performance due to the state of the platen of the polishing machine by making the thickness of 0.8 mm or more. In addition, there is also an advantage that, for example, the object to be polished can be stably flattened. In addition, the polishing cloth of this embodiment has an advantage that the deformation of the polishing cloth can be reduced by reducing the thickness to 2.0 mm or less. As a result, the edge of the object to be polished can be suppressed from slumping.
作為構成上述不織布之纖維，可列舉聚酯纖維、尼龍纖維等。 上述不織布之單位面積重量較佳為200～600 g/m2 。 本實施形態之研磨布藉由使不織布之單位面積重量為200 g/m2 以上，具有硬度容易提高，其結果為，可抑制被研磨物之端部塌邊之優點。又，本實施形態之研磨布藉由使不織布之單位面積重量為200～600g/m2 ，而容易於研磨面以適當之比率具有空隙部分。其結果為，本實施形態之研磨布藉由該構成，具有容易抑制因由研磨屑等引起之空隙之堵塞而使研磨性能發生變動等優點。Examples of the fibers constituting the nonwoven fabric include polyester fibers and nylon fibers. The nonwoven fabric preferably has a weight per unit area of 200 to 600 g / m 2 . The abrasive cloth of this embodiment has the advantage that the non-woven fabric has a weight per unit area of 200 g / m 2 or more, which can easily increase the hardness. As a result, the edge of the object to be polished can be suppressed. Moreover, the polishing cloth of this embodiment makes it easy for the polishing surface to have a void portion at an appropriate ratio by setting the basis weight of the nonwoven fabric to 200 to 600 g / m 2 . As a result, the polishing cloth according to this embodiment has the advantages of easily suppressing the change in polishing performance due to the clogging of the voids caused by the grinding dust and the like due to this configuration.
作為上述樹脂，可列舉聚胺酯樹脂等。Examples of the resin include a polyurethane resin and the like.
作為利用本實施形態之研磨布進行研磨之被研磨物，可列舉矽晶圓等。Examples of the object to be polished using the polishing cloth of this embodiment include a silicon wafer and the like.
本實施形態之研磨布係如上述般構成，其次，對本實施形態之研磨布之製造方法進行說明。The polishing cloth according to this embodiment is configured as described above. Next, a method for manufacturing the polishing cloth according to this embodiment will be described.
以下，對本實施形態之研磨布之製造方法，列舉進行使聚胺酯樹脂濕式含浸於不織布、進而使聚胺酯樹脂乾式含浸於不織布等二階段含浸處理之方法為例進行說明。Hereinafter, the manufacturing method of the abrasive cloth according to this embodiment is described by taking a method of performing a two-stage impregnation treatment such as wet impregnating a polyurethane resin with a non-woven fabric and further impregnating a polyurethane resin with a non-woven fabric as an example.
於濕式含浸中，使聚胺酯樹脂溶解於水溶性有機溶劑中，獲得第1含浸液。 作為水溶性有機溶劑，可列舉：二甲基甲醯胺、二甲基亞碸、四氫呋喃、二甲基乙醯胺等。 再者，第1含浸液亦可含有填充劑。作為該填充劑，可列舉碳黑等。又，第1含浸液亦可含有分散穩定劑。作為該分散穩定劑，可列舉界面活性劑等。 其次，將不織布浸漬於第1含浸液中，並將浸漬於第1含浸液中之不織布浸漬於水中。藉此，附著於不織布之第1含浸液中水溶性有機溶劑被置換為水，聚胺酯樹脂凝固，從而於不織布之表面附著聚胺酯樹脂。In the wet impregnation, the polyurethane resin is dissolved in a water-soluble organic solvent to obtain a first impregnating solution. Examples of the water-soluble organic solvent include dimethylformamide, dimethylmethylene, tetrahydrofuran, and dimethylacetamide. The first impregnating solution may contain a filler. Examples of the filler include carbon black and the like. The first impregnating solution may contain a dispersion stabilizer. Examples of the dispersion stabilizer include a surfactant. Next, the nonwoven fabric is immersed in the first impregnation liquid, and the nonwoven fabric immersed in the first impregnation liquid is immersed in water. Thereby, the water-soluble organic solvent in the 1st impregnating solution adhering to a nonwoven fabric is replaced with water, a polyurethane resin is solidified, and a polyurethane resin adheres to the surface of a nonwoven fabric.
於乾式含浸中，將具有異氰酸基作為末端基之預聚物與具有活性氫之有機化合物即硬化劑及有機溶劑進行混合，獲得第2含浸液。 作為上述有機溶劑，可列舉：甲基乙基酮、丙酮、醇、乙酸乙酯等。 然後，將經濕式含浸之不織布浸漬於第2含浸液中，將浸漬於第2含浸液中之不織布利用乾燥爐進行加熱。藉此，有機溶劑被蒸發，預聚物與硬化劑進行硬化反應而形成聚胺酯樹脂，其結果為，於不織布之表面進一步附著聚胺酯樹脂。In the dry impregnation, a prepolymer having an isocyanate group as a terminal group is mixed with an organic compound having an active hydrogen, that is, a hardener and an organic solvent to obtain a second impregnating solution. Examples of the organic solvent include methyl ethyl ketone, acetone, alcohol, and ethyl acetate. Then, the wet impregnated nonwoven fabric is immersed in the second impregnation liquid, and the nonwoven fabric impregnated in the second impregnation liquid is heated in a drying furnace. As a result, the organic solvent is evaporated, and the prepolymer and the curing agent undergo a curing reaction to form a polyurethane resin. As a result, the polyurethane resin is further adhered to the surface of the nonwoven fabric.
本實施形態之研磨布由於如上述般構成，故而具有以下之優點。The polishing cloth of this embodiment has the following advantages because it is configured as described above.
即，本實施形態之研磨布係具備不織布、及含浸於該不織布中之樹脂作為形成材料之研磨布。又，關於本實施形態之研磨布，自厚度方向中央部至一表面之上述形成材料之存在比率為30～60%，且上述厚度方向上之上述存在比率之最大值與最小值之差為10%以下。That is, the polishing cloth of this embodiment is a polishing cloth provided with a nonwoven fabric and a resin impregnated with the nonwoven fabric as a forming material. In the polishing cloth of this embodiment, the existence ratio of the above-mentioned forming material from the central portion to the one surface in the thickness direction is 30 to 60%, and the difference between the maximum value and the minimum value of the existence ratio in the thickness direction is 10 %the following.
該研磨布藉由使上述自厚度方向中央部至一表面之上述形成材料之存在比率為60%以下，而具有較多空隙，因此，即便切屑稍有堵塞空隙，亦抑制研磨速率之降低。 又，研磨布於製法上，自厚度方向中央部至表面，形成材料之存在比率增大，但本實施形態之研磨布藉由使上述厚度方向之上述存在比率之最大值與最小值之差為10%以下，而容易於研磨布之表面存在較多空隙，其結果為，即便切屑稍有堵塞空隙，亦抑制研磨速率之降低。進而，該研磨布藉由該構成，而使自厚度方向中央部至一表面之上述存在比率之變化減小，即便被研磨(dressing)，亦抑制研磨速率之變化。 進而，該研磨布藉由使上述自厚度方向中央部至一表面之上述形成材料之存在比率為30%以上，存在材料之部位變多，硬度成為較高者，其結果為，可抑制端部塌邊。 綜上，根據本實施形態，能夠提供一種可抑制堵塞及端部塌邊之研磨布。This polishing cloth has a large number of voids by reducing the existence ratio of the above-mentioned forming material from the central portion to the one surface in the thickness direction to 60% or less. Therefore, even if the chips slightly block the voids, the reduction in the polishing rate is suppressed. In addition, in the manufacturing method of the polishing cloth, the existence ratio of the forming material increases from the central portion to the surface in the thickness direction. However, the difference between the maximum value and the minimum value of the existence ratio in the thickness direction of the polishing cloth of this embodiment is 10% or less, and there are many voids on the surface of the polishing cloth. As a result, even if the chips slightly block the voids, the reduction in the polishing rate is suppressed. Furthermore, with this configuration, the polishing cloth reduces the change in the above-mentioned existence ratio from the central portion in the thickness direction to one surface, and suppresses the change in the polishing rate even when being dressed. Furthermore, the polishing cloth has a ratio of the above-mentioned forming material from the central portion to the one surface in the thickness direction of 30% or more, the number of locations where the material is present increases, and the hardness becomes higher. As a result, the end portion can be suppressed Collapse. In summary, according to this embodiment, it is possible to provide a polishing cloth capable of suppressing clogging and edge sag.
再者，本發明之研磨布並不限定於上述實施形態。又，本發明之研磨布並不限定於上述作用效果。本發明之研磨布能夠於不脫離本發明之主旨之範圍內進行各種變更。The polishing cloth of the present invention is not limited to the above-mentioned embodiment. The polishing cloth of the present invention is not limited to the aforementioned effects. The polishing cloth of the present invention can be variously modified without departing from the gist of the present invention.
例如於本實施形態中，利用進行二階段含浸處理之方法獲得研磨布，但亦可僅由濕式含浸或乾式含浸獲得研磨布。 [實施例]For example, in this embodiment, the polishing cloth is obtained by a two-stage impregnation method, but the polishing cloth may be obtained only by wet impregnation or dry impregnation. [Example]
其次，列舉實施例及比較例對本發明更具體地說明。Next, the present invention will be described more specifically with reference to examples and comparative examples.
製作成為圖1及表1所示之形成材料之存在比率且顯示出表2所示之物性的實施例1、2之研磨布。又，準備成為圖1及表1所示之形成材料之存在比率且顯示出表2所示之物性的比較例1之研磨布(市售品)。 再者，形成材料之存在比率、及硬度係利用上述方法進行測定。 又，圖1之「表面」意指「一表面(下述研磨面)」。又，於實施例及比較例之研磨布之形成材料之存在比率之測定時，自一表面至厚度方向中央部每100 μm進行剖面觀察，從而自一表面觀察至厚度600 μm。 進而，表1之「自厚度100 μm至厚度600 μm之形成材料之存在比率之平均值」意指「自厚度方向中央部至一表面之形成材料之存在比率」，表1之「自厚度100 μm至厚度600 μm之形成材料之存在比率之最大值與最小值之差」意指「厚度方向上形成材料之存在比率之最大值與最小值之差」。 又，壓縮率及壓縮彈性模數係利用JIS L1096：2010中記載之方法進行測定。 又，風阻值(APR)意指使用圖2所示之裝置，使空氣於研磨布之厚度方向上通過時(空氣之流量：30 L/min、空氣之壓力：100 Pa)所損耗之壓力。The polishing cloths of Examples 1 and 2 having the existence ratios of the forming materials shown in FIG. 1 and Table 1 and showing the physical properties shown in Table 2 were produced. In addition, an abrasive cloth (commercially available product) of Comparative Example 1 having the existence ratio of the forming materials shown in FIG. 1 and Table 1 and showing the physical properties shown in Table 2 was prepared. The existence ratio and hardness of the forming material were measured by the methods described above. In addition, the "surface" in FIG. 1 means "a surface (the following abrasive surface)." In addition, in the measurement of the existence ratio of the forming materials of the polishing cloths in the examples and comparative examples, a cross-sectional observation was performed every 100 μm from one surface to the central portion in the thickness direction, and a thickness of 600 μm was observed from one surface. Further, "the average value of the existence ratio of the forming material from the thickness of 100 μm to the thickness of 600 μm" in Table 1 means "the existence ratio of the forming material from the central portion to the surface in the thickness direction", and "from the thickness of 100 "Difference between the maximum value and the minimum value of the existence ratio of the forming material in the thickness direction of 600 m" means "the difference between the maximum value and the minimum value of the existence ratio of the forming material in the thickness direction". The compression ratio and the compressive elastic modulus were measured by a method described in JIS L1096: 2010. In addition, the wind resistance value (APR) means the pressure that is lost when the air is passed in the thickness direction of the polishing cloth using the device shown in FIG. 2 (flow rate of air: 30 L / min, pressure of air: 100 Pa). .
[表1]
[表2]
對使用實施例及比較例之研磨布研磨晶圓時之研磨速率進行測定。 將研磨速率之測定時之研磨條件示於以下。於以下之研磨條件下實施8次40分鐘之研磨。每40分鐘之研磨時(每次處理時)測定晶圓之重量，根據研磨前晶圓之重量與研磨後晶圓之重量之差求出研磨速率(Removal rate(RR))。將結果示於圖3及表3。 再者，表3所示之「RR下降率(drop rate)」意指研磨速率(Removal rate，RR)之下降率，由下述式求出。 RR下降率(%)＝(RR最大值－RR最小值)/RR最大值×100(%) 又，處理期間，未進行如消除堵塞之處理(例如利用刷進行之處理)等。 進而，於研磨速率之測定時，將上述一表面設為研磨面。 研磨機：Strasbaugh 6CA 晶圓：8”(P-) 研磨液：將NP6502(Nittahaas股份有限公司製造)稀釋20倍而得者 研磨液之流量：100 mL/min 研磨時間：40 min/run 又，將實施例1及比較例1之研磨布之表面及剖面之SEM圖像示於圖4～7。The polishing rate when the wafer was polished using the polishing cloths of the examples and comparative examples was measured. The polishing conditions at the time of measuring a polishing rate are shown below. Under the following polishing conditions, polishing was performed eight times for 40 minutes. The weight of the wafer was measured during polishing every 40 minutes (each time), and the polishing rate (Removal rate (RR)) was calculated based on the difference between the weight of the wafer before polishing and the weight of the wafer after polishing. The results are shown in Fig. 3 and Table 3. In addition, the "RR drop rate" shown in Table 3 means the fall rate of a removal rate (RR), and was calculated | required by the following formula. RR decrease rate (%) = (RR maximum value-RR minimum value) / RR maximum value × 100 (%) During the processing, no processing such as clogging elimination (for example, processing using a brush) was performed. Further, in the measurement of the polishing rate, the above-mentioned one surface is set as a polishing surface. Grinding machine: Strasbaugh 6CA Wafer: 8 "(P-) Grinding liquid: Dilute NP6502 (manufactured by Nittahaas Co., Ltd.) 20 times. Flow rate of polishing liquid: 100 mL / min Grinding time: 40 min / run SEM images of the surface and cross section of the polishing cloths of Example 1 and Comparative Example 1 are shown in FIGS. 4 to 7.
[表3]
如圖3及表3所示，於實施例之研磨布中，與比較例相比，研磨速率(RR)之降低得到抑制。 又，如表3所示，於比較例1之研磨布中，「RR最大值－RR最小值」為0.53 μm/min，相對於此，於實施例1、2之研磨布中，「RR最大值－RR最小值」為極小之值，即0.06 μm/min、0.09 μm/min。 進而，如表3所示，於比較例1之研磨布中，「RR下降率」為59%，相對於此，於實施例1、2之研磨布中，「RR下降率」為極小之值，即8%、11%。 [關聯申請案之相互參照]As shown in FIG. 3 and Table 3, in the polishing cloth of the Example, the fall of the polishing rate (RR) was suppressed compared with the comparative example. As shown in Table 3, in the polishing cloth of Comparative Example 1, the "RR maximum value-RR minimum value" was 0.53 μm / min. In contrast, in the polishing cloths of Examples 1 and 2, "RR maximum "Value-RR minimum" is a very small value, that is, 0.06 μm / min, 0.09 μm / min. Furthermore, as shown in Table 3, in the polishing cloth of Comparative Example 1, the "RR reduction rate" was 59%. In contrast, in the polishing cloths of Examples 1 and 2, the "RR reduction rate" was a very small value. , That is, 8%, 11%. [Cross-reference of related applications]
本案主張日本專利特願2017-143436號之優先權，以引用之方式併入至本案說明書之記載。This case claims the priority of Japanese Patent Application No. 2017-143436, which is incorporated into the description of the specification of this case by reference.
圖1係實施例及比較例之研磨布之剖面中之形成材料之存在比率。 圖2係風阻值(APR)之測定所使用之裝置之概略圖。 圖3係使用實施例及比較例之研磨布研磨晶圓時之研磨速率。 圖4係實施例1之研磨布之剖面之SEM圖像(50倍)。 圖5係實施例1之研磨布之表面之SEM圖像(50倍)。 圖6係比較例1之研磨布之剖面之SEM圖像(50倍)。 圖7係比較例1之研磨布之表面之SEM圖像(50倍)。FIG. 1 shows the existence ratio of the forming material in the cross section of the polishing cloths of Examples and Comparative Examples. Figure 2 is a schematic diagram of the device used for the measurement of wind resistance (APR). FIG. 3 shows a polishing rate when a wafer is polished using the polishing cloths of the Examples and Comparative Examples. FIG. 4 is a SEM image (50 times) of a cross section of the polishing cloth of Example 1. FIG. FIG. 5 is a SEM image (50 times) of the surface of the polishing cloth of Example 1. FIG. FIG. 6 is a SEM image (50 times) of a cross section of the polishing cloth of Comparative Example 1. FIG. FIG. 7 is an SEM image (50 times) of the surface of the polishing cloth of Comparative Example 1. FIG.
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| KR102305796B1 (en) * | 2020-02-05 | 2021-09-28 | 에스케이실트론 주식회사 | Wafer polishing pad, apparatus and manufacturing method thereof |
| JP7481143B2 (en) * | 2020-03-27 | 2024-05-10 | 富士紡ホールディングス株式会社 | Polishing pad, its manufacturing method, and manufacturing method of polished workpiece |
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| JPS62140769A (en) * | 1985-12-16 | 1987-06-24 | Toyo Cloth Kk | Manufacture of abrasive cloth |
| JPH01193166A (en) * | 1988-01-28 | 1989-08-03 | Showa Denko Kk | Pad for specularly grinding semiconductor wafer |
| JP2509870B2 (en) * | 1993-06-30 | 1996-06-26 | 千代田株式会社 | Polishing cloth |
| JP3664676B2 (en) * | 2001-10-30 | 2005-06-29 | 信越半導体株式会社 | Wafer polishing method and polishing pad for wafer polishing |
| JP4890751B2 (en) | 2004-08-04 | 2012-03-07 | ニッタ・ハース株式会社 | Polishing cloth |
| JP5204502B2 (en) * | 2007-02-01 | 2013-06-05 | 株式会社クラレ | Polishing pad and polishing pad manufacturing method |
| CN101612722A (en) * | 2008-06-25 | 2009-12-30 | 三芳化学工业股份有限公司 | Polishing pad and manufacture method thereof |
| EP2316614B1 (en) * | 2008-08-08 | 2019-07-17 | Kuraray Co., Ltd. | Polishing pad and method for manufacturing the polishing pad |
| JP5478956B2 (en) * | 2009-06-26 | 2014-04-23 | ニッタ・ハース株式会社 | Polishing pad for notch polishing |
| JP2014139361A (en) * | 2012-12-19 | 2014-07-31 | Kuraray Co Ltd | Composite substrate sheet and method for producing composite substrate sheet |
| WO2014125797A1 (en) * | 2013-02-12 | 2014-08-21 | 株式会社クラレ | Rigid sheet and process for manufacturing rigid sheet |
| TWI565735B (en) * | 2015-08-17 | 2017-01-11 | Nanya Plastics Corp | A polishing pad for surface planarization processing and a process for making the same |
-
2017
- 2017-07-25 JP JP2017143436A patent/JP6951895B2/en active Active
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2018
- 2018-07-18 CN CN201880037093.1A patent/CN110709208A/en active Pending
- 2018-07-18 WO PCT/JP2018/026805 patent/WO2019021897A1/en active Application Filing
- 2018-07-18 KR KR1020197034585A patent/KR102586673B1/en active IP Right Grant
- 2018-07-20 TW TW107125084A patent/TWI775900B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| KR20200034952A (en) | 2020-04-01 |
| CN110709208A (en) | 2020-01-17 |
| JP2019025549A (en) | 2019-02-21 |
| JP6951895B2 (en) | 2021-10-20 |
| TWI775900B (en) | 2022-09-01 |
| WO2019021897A1 (en) | 2019-01-31 |
| KR102586673B1 (en) | 2023-10-06 |
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