WO2019021897A1 - Polishing cloth - Google Patents

Polishing cloth Download PDF

Info

Publication number
WO2019021897A1
WO2019021897A1 PCT/JP2018/026805 JP2018026805W WO2019021897A1 WO 2019021897 A1 WO2019021897 A1 WO 2019021897A1 JP 2018026805 W JP2018026805 W JP 2018026805W WO 2019021897 A1 WO2019021897 A1 WO 2019021897A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
forming material
thickness direction
abundance ratio
present
Prior art date
Application number
PCT/JP2018/026805
Other languages
French (fr)
Japanese (ja)
Inventor
惠司 山本
孝司 岳田
伊藤 栄直
Original Assignee
ニッタ・ハース株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ニッタ・ハース株式会社 filed Critical ニッタ・ハース株式会社
Priority to KR1020197034585A priority Critical patent/KR102586673B1/en
Priority to CN201880037093.1A priority patent/CN110709208A/en
Publication of WO2019021897A1 publication Critical patent/WO2019021897A1/en

Links

Images

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/11Lapping tools
    • B24B37/20Lapping pads for working plane surfaces
    • B24B37/24Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • DTEXTILES; PAPER
    • D06TREATMENT OF TEXTILES OR THE LIKE; LAUNDERING; FLEXIBLE MATERIALS NOT OTHERWISE PROVIDED FOR
    • D06MTREATMENT, NOT PROVIDED FOR ELSEWHERE IN CLASS D06, OF FIBRES, THREADS, YARNS, FABRICS, FEATHERS OR FIBROUS GOODS MADE FROM SUCH MATERIALS
    • D06M15/00Treating fibres, threads, yarns, fabrics, or fibrous goods made from such materials, with macromolecular compounds; Such treatment combined with mechanical treatment
    • D06M15/19Treating fibres, threads, yarns, fabrics, or fibrous goods made from such materials, with macromolecular compounds; Such treatment combined with mechanical treatment with synthetic macromolecular compounds
    • D06M15/37Macromolecular compounds obtained otherwise than by reactions only involving carbon-to-carbon unsaturated bonds
    • D06M15/564Polyureas, polyurethanes or other polymers having ureide or urethane links; Precondensation products forming them
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Abstract

The present invention is a polishing cloth provided with, as forming materials: a nonwoven fabric; and a resin impregnating the nonwoven fabric, wherein the existence rate of the forming materials in an area from the center portion in the thickness direction to one surface is 30-60%, and the difference between the maximum value and the minimum value of the existence rate in the thickness direction is 10% or lower.

Description

研磨布Abrasive cloth 関連出願の相互参照Cross-reference to related applications
 本願は、日本国特願2017-143436号の優先権を主張し、引用によって本願明細書の記載に組み込まれる。 The present application claims the priority of Japanese Patent Application No. 201-143436 and is incorporated by reference into the description of the present specification.
 本発明は、研磨布に関する。 The present invention relates to an abrasive cloth.
 従来、シリコンウェハなどの被研磨物を研磨するのに、形成材料として、不織布と、該不織布に含浸された樹脂とを備えた研磨布が用いられている(例えば、特許文献1)。 Conventionally, in order to polish an object to be polished such as a silicon wafer, a polishing cloth provided with a non-woven fabric and a resin impregnated in the non-woven fabric is used as a forming material (for example, Patent Document 1).
 ここで、研磨布においては、端部ダレが生じることが知られている。
 樹脂の含浸量を増やして研磨布を硬くすると端部ダレを防ぐことができるが、その場合は、研磨布を形成する形成材料の存在比率が研磨面において高くなる。
 被研磨物の研磨時には、形成材料の存在していない部分(空隙)が削り屑の収容スペースとなるため、樹脂の含浸量を増やしすぎると目詰まりし易くなる。
Here, in the polishing cloth, it is known that end sag occurs.
If the amount of resin impregnation is increased to make the polishing pad hard, it is possible to prevent edge sag, but in that case, the proportion of the forming material forming the polishing pad is high on the polishing surface.
At the time of polishing of the object to be polished, the portion (void) where the forming material is not present becomes a storage space for shavings, so if the amount of resin impregnation is increased too much, clogging tends to occur.
日本国特開2006-43811号公報Japanese Patent Laid-Open Publication No. 2006-43811
 そこで、本発明は、上記問題点に鑑み、目詰まり及び端部ダレを抑制し得る研磨布を提供することを課題とする。 Then, this invention makes it a subject to provide the abrasive cloth which can suppress clogging and edge part sag in view of the said problem.
 本発明に係る研磨布は、形成材料として、不織布と、該不織布に含浸された樹脂とを備えた研磨布であって、
 厚み方向中央部から一方の表面までの前記形成材料の存在比率が30~60%であり、且つ、前記厚み方向における前記存在比率の最大値と最小値との差が10%以下である。
The polishing pad according to the present invention is a polishing pad provided with a non-woven fabric and a resin impregnated in the non-woven fabric as a forming material,
The abundance ratio of the forming material from the thickness direction central portion to one surface is 30 to 60%, and the difference between the maximum value and the minimum value of the abundance ratio in the thickness direction is 10% or less.
実施例及び比較例の研磨布の断面における形成材料の存在比率。The abundance ratio of the forming material in the cross section of the abrasive cloth of an Example and a comparative example. 通気抵抗値(APR)の測定に用いた装置の概略図。BRIEF DESCRIPTION OF THE DRAWINGS The schematic of the apparatus used for the measurement of ventilation resistance value (APR). 実施例及び比較例の研磨布を用いてウェハを研磨したときの研磨レート。Polishing rate when a wafer is polished using the polishing cloth of the embodiment and the comparative example. 実施例1の研磨布の断面のSEM画像(50倍)。The SEM image (50x) of the cross section of the polishing cloth of Example 1. FIG. 実施例1の研磨布の表面のSEM画像(50倍)。An SEM image (50 ×) of the surface of the polishing pad of Example 1. 比較例1の研磨布の断面のSEM画像(50倍)。The SEM image (50x) of the cross section of the abrasive cloth of the comparative example 1. FIG. 比較例1の研磨布の表面のSEM画像(50倍)。The SEM image (50x) of the surface of the abrasive cloth of the comparative example 1. FIG.
 以下、添付図面を参照しつつ、本発明の一実施形態について説明する。 Hereinafter, an embodiment of the present invention will be described with reference to the attached drawings.
 本実施形態に係る研磨布は、形成材料として、不織布と、該不織布に含浸された樹脂とを備える。
 また、本実施形態に係る研磨布では、厚み方向中央部から一方の表面までの前記形成材料の存在比率が30~60%であり、且つ、前記厚み方向における前記存在比率の最大値と最小値との差が10%以下であることが重要である。
 前記厚み方向中央部から一方の表面までの前記形成材料の存在比率は、30~60%である。
 なお、前記一方の表面は、研磨面となる。
The polishing pad according to the present embodiment includes, as a forming material, a non-woven fabric and a resin impregnated in the non-woven fabric.
In addition, in the polishing pad according to the present embodiment, the abundance ratio of the forming material from the central portion in the thickness direction to one surface is 30 to 60%, and the maximum value and the minimum value of the abundance ratio in the thickness direction It is important that the difference with is 10% or less.
The abundance ratio of the forming material from the center in the thickness direction to one surface is 30 to 60%.
The one surface is a polished surface.
 「厚み方向中央部から一方の表面までの形成材料の存在比率」、及び、「前記厚み方向における形成材料の存在比率の最大値と最小値との差」は、以下のようにして求めることができる。
 すなわち、一方の表面から厚み方向中央部まで100μmごとに断面観察し、各断面において形成材料の存在比率を測定する。
 そして、測定した形成材料の存在比率の算術平均値を、「厚み方向中央部から一方の表面までの形成材料の存在比率」とし、測定した形成材料の存在比率における、最大値から最小値を引いた値を「前記厚み方向における形成材料の存在比率の最大値と最小値との差」とする。
 なお、各断面における形成材料の存在比率とは、各断面における観察する部分において、観察する部分の面積全体を100%としたときにおける、形成材料が存在する部分の面積の割合を意味する。
 また、前記厚み方向における前記存在比率の最大値と最小値との差は、0.0%でもよく、0.1~10%でもよい。
The “existence ratio of the forming material from the center in the thickness direction to one surface” and “the difference between the maximum value and the minimum value of the existence ratio of the forming material in the thickness direction” may be determined as follows: it can.
That is, cross sections are observed every 100 μm from one surface to the center in the thickness direction, and the abundance ratio of the forming material is measured in each cross section.
Then, the arithmetic mean value of the measured abundance ratio of the forming material is taken as "the abundance ratio of the forming material from the central portion in the thickness direction to one surface", and the minimum value is subtracted from the maximum value in the measured abundance ratio of the forming material This value is taken as "the difference between the maximum value and the minimum value of the abundance ratio of the forming material in the thickness direction".
In addition, the abundance ratio of the forming material in each cross section means the ratio of the area of the portion in which the forming material exists when the entire area of the portion to be observed is 100% in the portion to be observed in each cross section.
Further, the difference between the maximum value and the minimum value of the abundance ratio in the thickness direction may be 0.0% or 0.1 to 10%.
 前記測定では、CT-scanにより研磨布を撮影する。
 具体的には、研磨布の一方の表面から厚み方向中央部まで100μmごとに断面の画像を取得する。そして、断面の画像において、空隙と空隙以外の部分(形成材料が存在する部分)とに分類する二値化処理をすることにより、各断面における前記形成材料の存在比率(面積比率)を測定する。
 CT装置としては、ヤマト科学株式会社製の三次元計測X線CT装置(TDM1000H-1)を用いることができる。
 また、CT画像処理ソフトとしては、ボリュームグラフィックス株式会社製の画像処理ソフトVGStudio Max 2.1を用いることができる。
 さらに、形成材料の存在比率(面積比率)を算出する画像解析ソフトとしては、三谷商事株式会社製のWinRoofを用いることができる。
 観察する各断面の面積は、1,300μm×1,300μmとすることができる。
In the measurement, the polishing cloth is photographed by CT-scan.
Specifically, an image of a cross section is acquired every 100 μm from one surface of the polishing cloth to the center in the thickness direction. Then, in the image of the cross section, the existence ratio (area ratio) of the forming material in each cross section is measured by performing a binarization process of classifying into a void and a portion other than the void (a portion where the forming material exists). .
As a CT apparatus, a three-dimensional measurement X-ray CT apparatus (TDM1000H-1) manufactured by Yamato Scientific Co., Ltd. can be used.
Moreover, as CT image processing software, image processing software VGStudio Max 2.1 manufactured by Volume Graphics, Inc. can be used.
Furthermore, WinRoof manufactured by Mitani Corporation can be used as image analysis software for calculating the existing ratio (area ratio) of the forming material.
The area of each cross section to be observed can be 1,300 μm × 1,300 μm.
 例えば、以下のような条件で、各断面における前記形成材料の存在比率(面積比率)を測定する。 For example, the abundance ratio (area ratio) of the forming material in each cross section is measured under the following conditions.
 前記測定においては、以下の視野の大きさで研磨布の断面を連続測定する。
  視野の大きさ(縦×横×高さ) : 2,000μm × 2,000μm × 厚み方向全域
 また、前記測定の条件は、以下の通りである。
  1回転あたりのビュー数 : 1500
  フレーム数/ビュー : 10
  X線管電圧〔KV〕 : 25.000
  拡大軸位置〔mm〕 : 10.000
  再構成の画素サイズX〔mm〕 : 0.003880
  再構成の画素サイズY〔mm〕 : 0.003880
  再構成の画素サイズZ〔mm〕 : 0.003880
In the measurement, the cross section of the polishing cloth is continuously measured with the following field of view size.
Size of field of view (length × width × height): 2,000 μm × 2,000 μm × thickness direction entire region Further, the conditions of the measurement are as follows.
Number of views per rotation: 1500
Number of frames / view: 10
X-ray tube voltage [KV]: 25.000
Magnification axis position [mm]: 10.000
Pixel size for reconstruction X [mm]: 0.003880
Pixel size for reconstruction Y [mm]: 0.003880
Pixel size for reconstruction Z [mm]: 0.003880
 前記測定で得られた画像から研磨布の厚み方向中央を定める方法は、以下の通りである。
 まず、CT画像処理ソフト“VGStudio Max”上において、座標表記機能(ボリューム座標系モード)を用いて、研磨布について、X軸方向、Y軸方向及びZ軸方向それぞれの座標値をmm単位で表示する。
 次に、レジストレーション機能を用いて、研磨布の厚み方向が、X、Y、及びZ軸の何れかの一の方向と一致するように、前記ソフトにおける傾きを調整する。
 そして、研磨布の一方の表面の厚み方向の座標値と、他方の表面の厚み方向の座標値とから、厚み方向の座標値の平均値を求めることで、研磨布の厚み方向中央の位置を定める。
The method of determining the thickness direction center of the polishing cloth from the image obtained by the measurement is as follows.
First, on the CT image processing software "VGStudio Max", using the coordinate description function (volume coordinate system mode), the coordinate values in the X-axis direction, Y-axis direction and Z-axis direction are displayed in mm units for the polishing cloth Do.
Next, using the registration function, the inclination in the software is adjusted so that the thickness direction of the polishing pad coincides with one of the X, Y, and Z axes.
Then, from the coordinate value in the thickness direction of one surface of the polishing cloth and the coordinate value in the thickness direction of the other surface, the average value of the coordinate values in the thickness direction is obtained to obtain the central position in the thickness direction of the polishing cloth. Determined.
 断面の画像において、空隙と空隙以外の部分(形成材料が存在する部分)とに分類する二値化処理は、以下の通りである。
 二値化処理では、VGStudio Maxで、空隙と空隙以外の部分(形成材料が存在する部分)とに分類するために、断面の画像に関して、コントラストの調整を行う。
 コントラストの調整は、Rampモードで行う。
 コントラストの調整では、空隙と空隙以外の部分(形成材料が存在する部分)との違いが明確になるようにする。
 VGStudio Maxでは、コントラストの調整が“不透明度調整”と表記されている。
 具体的には、VGStudio Maxの不透明度調整の画面において、グレイバリューの下限値をピークに設定し、次にグレイバリューの上限値を「該ピークのピーク値+100±5」の範囲に設定する。なお、材料によって光の透過率が異なるので、コントラストの調整範囲は必ずしもこの限りではない。
In the image of the cross section, the binarization process of classifying into the void and the part other than the void (the part where the forming material exists) is as follows.
In the binarization process, contrast adjustment is performed on the image of the cross section in order to classify into the void and the portion other than the void (the portion where the forming material exists) in VGStudio Max.
Contrast adjustment is performed in Ramp mode.
In contrast adjustment, the difference between the void and the portion other than the void (the portion where the forming material is present) is made clear.
In VGStudio Max, contrast adjustment is described as "opacity adjustment".
Specifically, in the opacity adjustment screen of VG Studio Max, the lower limit value of the gray value is set to the peak, and then the upper limit value of the gray value is set to the range of “peak value of the peak + 100 ± 5”. The adjustment range of the contrast is not necessarily limited because the light transmittance varies depending on the material.
 前記コントラストの調整をした2D画像に対し、研磨布の一方の表面から厚み方向中央部まで100μmごとに断面の画像を取得する。 With respect to the 2D image whose contrast has been adjusted, an image of a cross section is acquired every 100 μm from one surface of the polishing pad to the central portion in the thickness direction.
 次に、前記取得した100μmごとの断面の画像について、WinRoofで材料存在率を測定する。
 WinRoofにおける測定範囲を「1,300μm×1,300μm」とし、「各断面における観察する部分において、観察する部分の面積全体を100%としたときにおける、形成材料が存在する部分の面積の割合」を、「各断面における形成材料の存在比率」とする。
 なお、WinRoofにおける二値化処理では、階調範囲が“127”~“255”の範囲となる部分を、空隙以外の部分(形成材料が存在する部分)とする。
Next, the material abundance ratio is measured by WinRoof about the acquired image of the cross section every 100 μm.
Assuming that the measurement range in WinRoof is “1,300 μm × 1,300 μm”, “the ratio of the area of the portion where the forming material exists when the entire area of the portion to be observed is 100% in the observation portion in each cross section” The “presence ratio of the forming material in each cross section” is
In the binarization process in WinRoof, a portion where the gradation range is in the range of “127” to “255” is a portion other than the void (a portion where the forming material exists).
 なお、存在比率については、一方の面について述べたが、他方の面についても、一方の面と同様な存在比率となっていることが好ましい。
 すなわち、本実施形態に係る研磨布では、厚み方向中央部から他方の表面までの前記形成材料の存在比率が30~60%であり、且つ、前記厚み方向における前記存在比率の最大値と最小値との差が10%以下であることが好ましい。
In addition, about an abundance ratio, although one side was described, it is preferable that it is the same abundance ratio as one surface also about the other side.
That is, in the polishing pad according to the present embodiment, the abundance ratio of the forming material from the central portion in the thickness direction to the other surface is 30 to 60%, and the maximum value and the minimum value of the abundance ratio in the thickness direction Is preferably 10% or less.
 本実施形態に係る研磨布のAsker-C硬度は、好ましくは80以上、より好ましくは85~95である。
 本実施形態に係る研磨布は、Asker-C硬度が80以上であることにより、被研磨物(例えば、ウェハ等)の端部ダレを抑制できるという利点を有する。また、本実施形態に係る研磨布は、Asker-C硬度が95以下であることにより、被研磨物の欠陥(例えば、傷など)を抑制できるという利点を有する。
 なお、Asker-C硬度は、SRIS0101(日本ゴム協会標準規格)の規定に従って測定した値を意味する。また、Asker-C硬度は、前記一方の表面で測定する。言い換えれば、Asker-C硬度は、研磨面で測定する。
The Asker-C hardness of the polishing pad according to this embodiment is preferably 80 or more, and more preferably 85 to 95.
The polishing cloth according to the present embodiment has an advantage that edge sag of an object to be polished (for example, a wafer etc.) can be suppressed by having an Asker-C hardness of 80 or more. In addition, the abrasive cloth according to the present embodiment has an advantage that defects (for example, scratches and the like) of an object to be polished can be suppressed by the Asker-C hardness being 95 or less.
Asker-C hardness means a value measured according to the definition of SRIS 0101 (Japan Rubber Association Standard). Also, the Asker-C hardness is measured on the one surface. In other words, Asker-C hardness is measured on the polished surface.
 本実施形態に係る研磨布の厚みは、好ましくは0.8~2.0mm、より好ましくは1.0~1.5mmである。
 本実施形態に係る研磨布は、厚みが0.8mm以上であることにより、研磨機の定盤の状態による研磨性能への悪影響を緩和しやすくなるという利点を有する。また、これにより、例えば、被研磨物を安定的に平坦にしやすくなるという利点もある。
 また、本実施形態に係る研磨布は、厚みが2.0mm以下であることにより、研磨時の研磨布の変形量を少なくでき、その結果、被研磨物の端部ダレを抑制できるという利点を有する。
The thickness of the polishing pad according to the present embodiment is preferably 0.8 to 2.0 mm, more preferably 1.0 to 1.5 mm.
The polishing cloth which concerns on this embodiment has the advantage that it becomes easy to relieve the bad influence on the polishing performance by the state of the surface plate of a polisher because thickness is 0.8 mm or more. This also has the advantage that, for example, the object to be polished can be stably and easily flattened.
In addition, the polishing cloth according to the present embodiment has a thickness of 2.0 mm or less, so that the amount of deformation of the polishing cloth at the time of polishing can be reduced. Have.
 前記不織布を構成する繊維としては、ポリエステル繊維、ナイロン繊維などが挙げられる。
 前記不織布の目付けは、好ましくは200~600g/mである。
 本実施形態に係る研磨布は、不織布の目付けが200g/m以上であることにより、硬度が高くなりやすくなり、その結果、被研磨物の端部ダレを抑制できるという利点を有する。また、本実施形態に係る研磨布は、不織布の目付けが200~600g/mであることにより、研磨面に空隙部分を適度な割合で有しやすくなる。その結果、本実施形態に係る研磨布は、斯かる構成により、研磨屑等による空隙の目詰まりによって研磨性能が変動するのを、抑制しやすくなるといった利点を有する。
Examples of fibers constituting the non-woven fabric include polyester fibers and nylon fibers.
The basis weight of the non-woven fabric is preferably 200 to 600 g / m 2 .
The polishing cloth according to the present embodiment has an advantage that the hardness tends to be high when the basis weight of the non-woven fabric is 200 g / m 2 or more, and as a result, it is possible to suppress edge sagging of the object to be polished. In addition, the polishing cloth according to the present embodiment can easily have void portions at an appropriate ratio on the polishing surface because the basis weight of the non-woven fabric is 200 to 600 g / m 2 . As a result, the polishing pad according to the present embodiment has such an advantage that it is easy to suppress variation in polishing performance due to clogging of voids due to polishing debris or the like.
 前記樹脂としては、ウレタン樹脂等が挙げられる。 Urethane resin etc. are mentioned as said resin.
 本実施形態に係る研磨布で研磨する被研磨物としては、シリコンウェハなどが挙げられる。 A silicon wafer etc. are mentioned as a thing to be grind | polished with the abrasive cloth which concerns on this embodiment.
 本実施形態に係る研磨布は、上記の如く構成されているが、次に、本実施形態に係る研磨布の製造方法について説明する。 The polishing pad according to the present embodiment is configured as described above. Next, a method of manufacturing the polishing pad according to the present embodiment will be described.
 以下、本実施形態に係る研磨布の製造方法について、ウレタン樹脂を不織布に湿式含浸し、更に、ウレタン樹脂を不織布に乾式含浸するといった二段階含浸処理を行う方法を例に挙げて説明する。 Hereinafter, the method for producing a polishing cloth according to the present embodiment will be described by taking, as an example, a method of performing a two-step impregnation process of wet impregnating a urethane resin into nonwoven fabric and dry impregnating a urethane resin into nonwoven fabric.
 湿式含浸では、ウレタン樹脂を水溶性有機溶媒に溶解させて第1の含浸液を得る。
 水溶性有機溶媒としては、ジメチルホルムアミド、ジメチルスルホキシド、テトラヒドロフラン、ジメチルアセトアミドなどが挙げられる。
 なお、第1の含浸液は、充填剤を含有してもよい。該充填剤としてはカーボンブラック等が挙げられる。また、第1の含浸液は、分散安定剤を含有してもよい。該分散安定剤としては、界面活性剤等が挙げられる。
 次に、第1の含浸液に不織布を漬け、第1の含浸液に漬けた不織布を水に漬ける。これにより、不織布に付着した第1の含浸液のうち水溶性有機溶媒が水に置換されて、ウレタン樹脂が凝固し、不織布の表面でウレタン樹脂が付着する。
In wet impregnation, a urethane resin is dissolved in a water-soluble organic solvent to obtain a first impregnation solution.
Examples of the water-soluble organic solvent include dimethylformamide, dimethylsulfoxide, tetrahydrofuran, dimethylacetamide and the like.
The first impregnating solution may contain a filler. Examples of the filler include carbon black and the like. The first impregnating solution may also contain a dispersion stabilizer. The dispersion stabilizer may, for example, be a surfactant.
Next, the non-woven fabric is dipped in the first impregnation solution, and the non-woven fabric dipped in the first impregnation solution is dipped in water. Thus, the water-soluble organic solvent in the first impregnating solution attached to the non-woven fabric is replaced with water, the urethane resin coagulates, and the urethane resin adheres on the surface of the non-woven fabric.
 乾式含浸では、末端基としてイソシアネート基を有するプレポリマーと、活性水素を有する有機化合物たる硬化剤と、有機溶媒とを混合して、第2の含浸液を得る。
 前記有機溶媒としては、メチルエチルケトン、アセトン、アルコール、酢酸エチルなどが挙げられる。
 そして、湿式含浸した不織布を第2の含浸液に漬け、第2の含浸液に漬けた不織布を乾燥炉で加熱する。これにより、有機溶媒が蒸発され、プレポリマーと硬化剤とが硬化反応してウレタン樹脂が形成され、その結果、不織布の表面にさらなるウレタン樹脂が付着する。
In dry impregnation, a prepolymer having an isocyanate group as an end group, a curing agent which is an organic compound having active hydrogen, and an organic solvent are mixed to obtain a second impregnating solution.
Examples of the organic solvent include methyl ethyl ketone, acetone, alcohol and ethyl acetate.
Then, the wet-impregnated non-woven fabric is dipped in a second impregnating solution, and the non-woven fabric dipped in the second impregnating solution is heated in a drying furnace. As a result, the organic solvent is evaporated, and the prepolymer and the curing agent cure to form a urethane resin. As a result, the additional urethane resin adheres to the surface of the non-woven fabric.
 本実施形態に係る研磨布は、上記のように構成されているので、以下の利点を有するものである。 Since the polishing pad according to the present embodiment is configured as described above, it has the following advantages.
 即ち、本実施形態に係る研磨布は、形成材料として、不織布と、該不織布に含浸された樹脂とを備えた研磨布である。また、本実施形態に係る研磨布は、厚み方向中央部から一方の表面までの前記形成材料の存在比率が30~60%であり、且つ、前記厚み方向における前記存在比率の最大値と最小値との差が10%以下である。 That is, the polishing pad according to the present embodiment is a polishing pad provided with a non-woven fabric and a resin impregnated in the non-woven fabric as a forming material. Further, in the polishing pad according to the present embodiment, the abundance ratio of the forming material from the center in the thickness direction to one surface is 30 to 60%, and the maximum value and the minimum value of the abundance ratio in the thickness direction And 10% or less.
 斯かる研磨布は、前記厚み方向中央部から一方の表面までの前記形成材料の存在比率が60%以下であることにより、空隙を多く有することになるので、削り屑が多少空隙に詰まっても、研磨レートの低下が抑制される。
 また、研磨布は、製法上、厚み方向中央部から表面にかけて、形成材料の存在比率が大きくなるが、本実施形態に係る研磨布は、前記厚み方向における前記存在比率の最大値と最小値との差が10%以下であることにより、研磨布の表面に空隙が多く存在しやすくなり、その結果、削り屑が多少空隙に詰まっても、研磨レートの低下が抑制される。さらに、斯かる研磨布は、斯かる構成により、厚み方向中央部から一方の表面にかけて前記存在比率の変化が小さくなり、ドレスされても、研磨レートの変化が抑制される。
 さらに、斯かる研磨布は、前記厚み方向中央部から一方の表面までの前記形成材料の存在比率が30%以上であることにより、材料が存在する箇所が多くなり、硬度が高いものとなり、その結果、端部ダレを抑制できる。
 以上より、本実施形態によれば、目詰まり及び端部ダレを抑制できる研磨布を提供し得る。
Such a polishing cloth has many voids due to the existence ratio of the forming material from the center in the thickness direction to one surface being 60% or less, even if shavings are slightly clogged And the reduction of the polishing rate is suppressed.
Further, in the polishing cloth, the proportion of the forming material increases from the center in the thickness direction to the surface in the manufacturing method, but in the polishing cloth according to the present embodiment, the maximum value and the minimum value of the proportion in the thickness direction When the difference of is 10% or less, a large number of voids are easily present on the surface of the polishing pad, and as a result, even if shavings are slightly clogged in the voids, the reduction of the polishing rate is suppressed. Furthermore, with such a configuration, such a polishing cloth reduces the change in the abundance ratio from the central portion in the thickness direction to one surface, and even if it is dressed, the change in the polishing rate is suppressed.
Furthermore, such a polishing cloth has an abundance ratio of the forming material of 30% or more from the central portion in the thickness direction to one surface, so the number of places where the material is present increases and the hardness becomes high. As a result, edge drop can be suppressed.
As mentioned above, according to this embodiment, the abrasive cloth which can control clogging and end drooping can be provided.
 なお、本発明に係る研磨布は、上記実施形態に限定されるものではない。また、本発明に係る研磨布は、上記した作用効果に限定されるものでもない。本発明に係る研磨布は、本発明の要旨を逸脱しない範囲で種々の変更が可能である。 The polishing pad according to the present invention is not limited to the above embodiment. Further, the polishing pad according to the present invention is not limited to the above-described effects. The polishing pad according to the present invention can be variously modified without departing from the scope of the present invention.
 例えば、本実施形態では、二段階含浸処理を行う方法で研磨布を得ているが、湿式含浸或いは乾式含浸のみで研磨布を得てもよい。 For example, in the present embodiment, the polishing cloth is obtained by the method of performing the two-stage impregnation process, but the polishing cloth may be obtained only by wet impregnation or dry impregnation.
 次に、実施例および比較例を挙げて本発明についてさらに具体的に説明する。 Next, the present invention will be more specifically described by way of examples and comparative examples.
 図1及び表1に示す形成材料の存在比率となっており、表2に示す物性を示す実施例1、2の研磨布を作製した。また、図1及び表1に示す形成材料の存在比率となっており、表2に示す物性を示す比較例1の研磨布(市販品)を用意した。
 なお、形成材料の存在比率、及び、硬度は上述した方法で測定した。
 また、図1の「表面」は、「一方の表面(後述する研磨面)」を意味する。また、実施例及び比較例の研磨布の形成材料の存在比率の測定では、一方の表面から厚み方向中央部まで100μmごとに断面観察したところ、一方の表面からの厚み600μmまで観察することになった。
 さらに、表1の「厚み100μmから厚み600μmまでにおける形成材料の存在比率の平均値」は、「厚み方向中央部から一方の表面までの形成材料の存在比率」を意味し、表1の「厚み100μmから厚み600μmまでにおける形成材料の存在比率の最大値と最小値との差」は、「厚み方向における形成材料の存在比率の最大値と最小値との差」を意味する。
 また、圧縮率及び圧縮弾性率は、JIS L1096:2010に記載の方法で測定した。
 また、通気抵抗値(APR)は、図2に示す装置を用い、空気を研磨布の厚み方向に通過させた際(空気の流量:30L/min、空気の圧力:100Pa)の損失した圧力を意味する。
Abrasive cloths of Examples 1 and 2 were produced which had the proportions of the forming materials shown in FIG. 1 and Table 1 and exhibited the physical properties shown in Table 2. Further, the polishing cloth (commercially available product) of Comparative Example 1 was prepared, which has the proportions of the forming materials shown in FIG. 1 and Table 1 and shows the physical properties shown in Table 2.
In addition, the existing ratio of the forming material and the hardness were measured by the method described above.
Moreover, "surface" of FIG. 1 means "one surface (polished surface mentioned later)". Moreover, in the measurement of the abundance ratio of the forming material of the polishing cloth of the example and the comparative example, when cross-sectional observation is performed every 100 μm from one surface to the central portion in the thickness direction, the thickness of 600 μm from one surface The
Furthermore, “the average value of the abundance ratio of the forming material in the thickness 100 μm to the thickness 600 μm” in Table 1 means “the abundance ratio of the forming material from the central portion in the thickness direction to one surface”; The difference between the maximum value and the minimum value of the abundance ratio of the forming material from 100 μm to a thickness of 600 μm means “the difference between the maximum value and the minimum value of the abundance ratio of the forming material in the thickness direction”.
Moreover, the compression rate and the compression elastic modulus were measured by the method of JIS L1096: 2010.
The air resistance value (APR) is the loss of pressure when air is allowed to pass in the thickness direction of the polishing cloth using the apparatus shown in FIG. 2 (flow rate of air: 30 L / min, pressure of air: 100 Pa). means.
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000001
Figure JPOXMLDOC01-appb-T000002
Figure JPOXMLDOC01-appb-T000002
 実施例及び比較例の研磨布を用いてウェハを研磨した時の研磨レートを測定した。
 研磨レートの測定の際の研磨条件を以下に示す。以下の研磨条件で40分間の研磨を8回実施した。40分間の研磨ごとに(ランごとに)ウェハの重量を測定し、研磨前のウェハの重量と研磨後のウェハの重量との差から研磨レート(Removal rate(RR))を求めた。結果を図3及び表3に示す。
 なお、表3に示す「RR drop rate」は、Removal rate(RR)の低下率を意味し、下記式で求めた。
 RR drop rate(%) = (RR最大値-RR最小値)/RR最大値 × 100(%)
 また、ラン間では、目詰まりを解消させるような処理(例えば、ブラシによる処理)などは行わなかった。
 さらに、研磨レートの測定では、前記一方の表面を研磨面とした。
  研磨機:Strasbaugh 6CA
  ウェハ:8”(P-)
  研磨液:NP6502(ニッタ・ハース株式会社製)を20倍希釈したもの
  研磨液の流量:100mL/min
  研磨時間:40min/run
 また、実施例1及び比較例1の研磨布の表面及び断面のSEM画像を図4~7に示す。
The polishing rate was measured when the wafer was polished using the polishing cloths of the example and the comparative example.
The polishing conditions for the measurement of the polishing rate are shown below. Polishing was performed eight times for 40 minutes under the following polishing conditions. The weight of the wafer was measured after each polishing for 40 minutes (per run), and the polishing rate (RR) was determined from the difference between the weight of the wafer before polishing and the weight of the wafer after polishing. The results are shown in FIG. 3 and Table 3.
In addition, "RR drop rate" shown in Table 3 means the decreasing rate of Removal rate (RR), and was calculated | required by the following formula.
RR drop rate (%) = (RR maximum value-RR minimum value) / RR maximum value × 100 (%)
In addition, between the runs, no treatment (for example, treatment with a brush) for eliminating clogging was performed.
Furthermore, in the measurement of the polishing rate, the one surface was used as the polishing surface.
Polishing machine: Strasbaugh 6CA
Wafer: 8 "(P-)
Polishing fluid: 20 times diluted NP6502 (manufactured by Nitta Haas Co., Ltd.) Flow rate of polishing fluid: 100 mL / min
Polishing time: 40 min / run
In addition, SEM images of the surface and the cross section of the polishing cloth of Example 1 and Comparative Example 1 are shown in FIGS.
Figure JPOXMLDOC01-appb-T000003
Figure JPOXMLDOC01-appb-T000003
 図3及び表3に示すように、実施例の研磨布では、比較例に比べて研磨レート(RR)の低下が抑制されていた。
 また、表3に示すように、比較例1の研磨布では、「RR最大値-RR最小値」が0.53μm/minであったのに対し、実施例1、2の研磨布では、「RR最大値-RR最小値」が0.06μm/min、0.09μm/minとかなり小さい値であった。
 さらに、表3に示すように、比較例1の研磨布では、「RR drop rate」が59%であったのに対し、実施例1、2の研磨布では、「RR drop rate」が8%、11%とかなり小さい値であった。
As shown in FIG. 3 and Table 3, in the polishing pad of the example, the reduction of the polishing rate (RR) was suppressed as compared with the comparative example.
Further, as shown in Table 3, in the polishing cloth of Comparative Example 1, "RR maximum value-RR minimum value" was 0.53 μm / min, while in the polishing cloths of Examples 1 and 2, " “RR maximum value−RR minimum value” was a fairly small value of 0.06 μm / min and 0.09 μm / min.
Furthermore, as shown in Table 3, while the "RR drop rate" was 59% in the polishing cloth of Comparative Example 1, the "RR drop rate" was 8% in the polishing cloths of Examples 1 and 2. , 11% was a fairly small value.

Claims (3)

  1.  形成材料として、不織布と、該不織布に含浸された樹脂とを備えた研磨布であって、
     厚み方向中央部から一方の表面までの前記形成材料の存在比率が30~60%であり、且つ、前記厚み方向における前記存在比率の最大値と最小値との差が10%以下である、研磨布。
    An abrasive cloth comprising a non-woven fabric and a resin impregnated in the non-woven fabric as a forming material,
    The polishing is performed such that the abundance ratio of the forming material from the thickness direction central portion to one surface is 30 to 60%, and the difference between the maximum value and the minimum value of the abundance ratio in the thickness direction is 10% or less cloth.
  2.  厚みが0.8~2.0mmである、請求項1に記載の研磨布。 The polishing pad according to claim 1, wherein the thickness is 0.8 to 2.0 mm.
  3.  Asker-C硬度が80以上である、請求項1又は2に記載の研磨布。 The abrasive cloth of Claim 1 or 2 whose Asker-C hardness is 80 or more.
PCT/JP2018/026805 2017-07-25 2018-07-18 Polishing cloth WO2019021897A1 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020197034585A KR102586673B1 (en) 2017-07-25 2018-07-18 polishing cloth
CN201880037093.1A CN110709208A (en) 2017-07-25 2018-07-18 Abrasive cloth

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017143436A JP6951895B2 (en) 2017-07-25 2017-07-25 Abrasive cloth
JP2017-143436 2017-07-25

Publications (1)

Publication Number Publication Date
WO2019021897A1 true WO2019021897A1 (en) 2019-01-31

Family

ID=65040160

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2018/026805 WO2019021897A1 (en) 2017-07-25 2018-07-18 Polishing cloth

Country Status (5)

Country Link
JP (1) JP6951895B2 (en)
KR (1) KR102586673B1 (en)
CN (1) CN110709208A (en)
TW (1) TWI775900B (en)
WO (1) WO2019021897A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113047056A (en) * 2019-12-27 2021-06-29 霓达杜邦股份有限公司 Abrasive cloth

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102305796B1 (en) * 2020-02-05 2021-09-28 에스케이실트론 주식회사 Wafer polishing pad, apparatus and manufacturing method thereof
JP7481143B2 (en) * 2020-03-27 2024-05-10 富士紡ホールディングス株式会社 Polishing pad, its manufacturing method, and manufacturing method of polished workpiece

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140769A (en) * 1985-12-16 1987-06-24 Toyo Cloth Kk Manufacture of abrasive cloth
JP2008207323A (en) * 2007-02-01 2008-09-11 Kuraray Co Ltd Polishing pad and manufacturing method for the polishing pad
WO2010016486A1 (en) * 2008-08-08 2010-02-11 株式会社クラレ Polishing pad and method for manufacturing the polishing pad
JP2011009584A (en) * 2009-06-26 2011-01-13 Nitta Haas Inc Polishing pad
JP2014139361A (en) * 2012-12-19 2014-07-31 Kuraray Co Ltd Composite substrate sheet and method for producing composite substrate sheet
WO2014125797A1 (en) * 2013-02-12 2014-08-21 株式会社クラレ Rigid sheet and process for manufacturing rigid sheet

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01193166A (en) * 1988-01-28 1989-08-03 Showa Denko Kk Pad for specularly grinding semiconductor wafer
JP2509870B2 (en) * 1993-06-30 1996-06-26 千代田株式会社 Polishing cloth
JP3664676B2 (en) * 2001-10-30 2005-06-29 信越半導体株式会社 Wafer polishing method and polishing pad for wafer polishing
JP4890751B2 (en) 2004-08-04 2012-03-07 ニッタ・ハース株式会社 Polishing cloth
CN101612722A (en) * 2008-06-25 2009-12-30 三芳化学工业股份有限公司 Polishing pad and manufacture method thereof
TWI565735B (en) * 2015-08-17 2017-01-11 Nanya Plastics Corp A polishing pad for surface planarization processing and a process for making the same

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62140769A (en) * 1985-12-16 1987-06-24 Toyo Cloth Kk Manufacture of abrasive cloth
JP2008207323A (en) * 2007-02-01 2008-09-11 Kuraray Co Ltd Polishing pad and manufacturing method for the polishing pad
WO2010016486A1 (en) * 2008-08-08 2010-02-11 株式会社クラレ Polishing pad and method for manufacturing the polishing pad
JP2011009584A (en) * 2009-06-26 2011-01-13 Nitta Haas Inc Polishing pad
JP2014139361A (en) * 2012-12-19 2014-07-31 Kuraray Co Ltd Composite substrate sheet and method for producing composite substrate sheet
WO2014125797A1 (en) * 2013-02-12 2014-08-21 株式会社クラレ Rigid sheet and process for manufacturing rigid sheet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113047056A (en) * 2019-12-27 2021-06-29 霓达杜邦股份有限公司 Abrasive cloth

Also Published As

Publication number Publication date
KR20200034952A (en) 2020-04-01
CN110709208A (en) 2020-01-17
JP2019025549A (en) 2019-02-21
TWI775900B (en) 2022-09-01
JP6951895B2 (en) 2021-10-20
KR102586673B1 (en) 2023-10-06
TW201908061A (en) 2019-03-01

Similar Documents

Publication Publication Date Title
WO2019021897A1 (en) Polishing cloth
DE112007002066B4 (en) polishing pad
CN105359258B (en) Grinding pad and its manufacturing method
DE112009000334B4 (en) Double disc grinding device for workpieces and double disc grinding process for workpieces
KR20120073200A (en) Supporting pad
DE112015005458T5 (en) VACUUM CLAMPING DEVICE, BLADE / POLISHING DEVICE AND SILICON WAFER COATING / POLISHING METHOD
KR101588925B1 (en) Retaining pad
JP2007260884A (en) Polishing cloth
JP2006075914A (en) Abrasive cloth
JP2014012322A (en) Polishing cloth and method for evaluating the same
JP2006255828A (en) Polishing cloth and manufacturing method for it
DE102017007338A1 (en) CONICAL POROMERES POLISHING CUSHIONS
JP5762668B2 (en) Polishing pad
JP2021107106A (en) Abrasive cloth
TW202235720A (en) Polishing cloth
CN113047056A (en) Abrasive cloth
JP2004291155A (en) Polishing cloth for finish polishing
DE102016001732A1 (en) A method of polishing a semiconductor substrate
DE102017009080A1 (en) Method of forming the surface of chemical mechanical polishing pads
EP2899226B1 (en) Method for preparing polyurethane support pad
TW201720578A (en) Polishing method
JP2006231437A (en) Polishing cloth and its manufacturing method
EP3772366A1 (en) Hybrid filter for filtering out fine and ultrafine dust
JP2007044858A (en) Manufacturing method of abrasive cloth and abrasive cloth
JP7409815B2 (en) Semiconductor wafer polishing method

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 18837715

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 18837715

Country of ref document: EP

Kind code of ref document: A1