TW201900285A - Substrate processing apparatus and substrate processing method - Google Patents

Abstract

The present invention relates to a substrate processing apparatus. According to the present invention, a control device of the substrate processing apparatus comprises: an information acquisition unit, a storage device, a heating execution unit, an opening degree determination unit, an opening degree setting unit, and a processing liquid supply unit.

Description

Substrate processing device and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, and a magnetic substrate. Optical disc substrates, photomask substrates, ceramic substrates, solar cell substrates, and the like.

In the manufacturing steps of a semiconductor device or a liquid crystal display device, a substrate processing device that processes a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used.

Japanese Patent Laid-Open No. 2016-152354 discloses a single-chip substrate processing apparatus that processes substrates one by one. The substrate processing apparatus includes a spin chuck that holds the substrate horizontally while rotating the substrate around a vertical axis of rotation passing through a central portion of the substrate, and ejects the substrate toward the substrate held by the spin chuck. Liquid nozzle, and a plurality of heaters for heating the processing liquid to be supplied to the nozzle. The plurality of heaters include an upstream heater that heats the circulating processing liquid, and a downstream heater that heats the processing liquid before the processing liquid heated by the upstream heater is ejected from the nozzle.

The processing liquid supplied to the substrate is ejected from the nozzle through a flow path formed by a plurality of members including a pipe and a nozzle. The processing liquid ejected from the nozzle collides with the substrate through the space between the nozzle and the substrate.

When the processing liquid supplied to the substrate is heated in advance by a heater, a part of the processing liquid is thermally released into the flow path or the air. Since such a heat loss inevitably occurs, a processing liquid slightly lower than the temperature of the heater is supplied to the substrate.

The amount of heat loss of the processing liquid is different at the beginning and after of the processing liquid. Therefore, even if the temperature of the heater is set in anticipation of the heat loss, the temperature of the processing liquid when ejected from the nozzle changes over time. In order to suppress such a temperature change, it is considered that the temperature setting of the heater is changed on the way, but the temperatures of the heater and the processing liquid do not necessarily change immediately.

It is therefore an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of controlling the temperature of a processing liquid when ejected from a nozzle with higher accuracy.

An embodiment of the present invention provides a substrate processing apparatus including at least one heater to heat a processing liquid, a first pipe to guide the processing liquid heated by the at least one heater, and a first flow rate adjustment. A valve that changes a flow rate of the processing liquid supplied to the first pipe; a first nozzle that sprays the processing liquid guided by the first pipe toward a substrate; and a control device that controls the at least one heater and the The first flow regulating valve is controlled.

The control device includes an information acquisition unit that acquires a heating temperature indicating a target value of a temperature of the processing liquid heated by the at least one heater and a target of the temperature of the processing liquid when ejected from the first nozzle. Value, that is, the first set temperature lower than the heating temperature; the heating execution unit causes the at least one heater to heat the processing liquid at the heating temperature; a memory device that memorizes the first opening degree determination data, and The first opening degree determination data is processing for supplying the first pipe when the processing liquid supplied to the first pipe at the heating temperature is discharged from the first nozzle at the first discharge temperature. Predetermined data corresponding to the opening degree of the first flow rate adjustment valve corresponding to the flow rate of the liquid; the first opening degree determining unit is based on the first opening degree determination data and the information stored in the memory device; The heating temperature and the first set temperature acquired by the acquisition unit determine a first target opening degree corresponding to a first target flow rate, and the first target flow rate causes the first ejection temperature and the first set temperature to be determined. Consistent or close A first opening setting unit that sets the opening of the first flow rate adjustment valve to the first target opening; and a first processing liquid supply unit that supplies the processing liquid to the first through the first pipe nozzle.

According to the above configuration, the processing liquid heated by the heater at the heating temperature is supplied to the first nozzle through the first pipe. The first discharge temperature, which indicates the temperature of the processing liquid when discharged from the first nozzle, changes not only in accordance with the temperature of the processing liquid supplied to the first pipe, but also in accordance with the flow rate of the processing liquid supplied to the first pipe. . That is, when the supply flow rate of the processing liquid decreases, the first discharge temperature decreases, and when the supply flow rate of the processing liquid increases, the first discharge temperature increases. This is because the amount of heat loss is approximately constant regardless of the supply flow rate of the processing liquid, while the heat capacity of the processing liquid changes in accordance with the supply flow rate of the processing liquid.

Even if the heating temperature is the same, if the supply flow rate of the processing liquid is different, the discharge temperature is also different. The first opening degree determination data defining these relationships is stored in a memory device of the control device. The supply flow rate of the processing liquid is set based on the first opening degree determination data so that the first discharge temperature matches or approaches the first set temperature. That is, the opening degree of the first flow rate adjustment valve that defines the supply flow rate of the processing liquid is set to the first target opening degree corresponding to the first target flow rate at which the first discharge temperature matches or approaches the first set temperature. In this state, a processing liquid having a heating temperature is supplied to the first pipe. Thereby, the processing liquid having the first set temperature or a temperature almost the same as the first set temperature is ejected from the first nozzle.

In this way, not only the temperature of the heater is properly managed, but also the flow rate of the processing liquid supplied to the first piping and the first nozzle, that is, the heat capacity of the processing liquid is appropriately set in accordance with the heating temperature and the first set temperature. Therefore, it is possible to control the temperature of the processing liquid when ejected from the first nozzle with higher accuracy. This can reduce the difference between the desired temperature and the actual temperature of the processing liquid supplied to the substrate. In addition, if the opening degree of the first flow rate adjustment valve is changed, the temperature of the processing liquid supplied to the substrate can be changed without changing the temperature of the heater. Therefore, compared with the case where the temperature of a heater is changed, the temperature of a processing liquid can be changed in a short time.

In the embodiment, at least one of the following features may be added to the substrate processing apparatus.

The substrate processing apparatus further includes: a second nozzle that discharges the processing liquid; a second pipe that guides the processing liquid to the second nozzle; and a second flow rate adjustment valve for the processing liquid that is supplied to the second pipe. The flow rate is changed, and the information acquisition unit of the control device further acquires a target value of the temperature of the processing liquid when ejected from the second nozzle, that is, a second set temperature lower than the heating temperature. The memory device further memorizes second opening degree determination data for the processing liquid supplied to the second pipe at the heating temperature from the second ejection temperature at the second discharge temperature. When the second nozzle is ejected, the opening degree of the second flow rate adjustment valve corresponding to the flow rate of the processing liquid supplied to the second pipe is predetermined data, and the control device further includes a second opening degree determining unit. , Based on the second opening degree determination data stored in the memory device, the heating temperature and the second set temperature obtained by the information acquisition unit, determine a second corresponding to the second target flow rate. Target opening degree, the second target flow Making the second discharge temperature coincide with or close to the second set temperature; a second opening setting unit that sets the opening of the second flow rate adjustment valve to the second target opening; and a second process The liquid supply unit supplies the processing liquid to the second nozzle through the second pipe.

According to the above-mentioned configuration, similarly to the first nozzle, the opening degree of the second flow rate adjustment valve that regulates the flow rate of the processing liquid supplied to the second pipe and the second nozzle is based on the second degree stored in the memory device of the control device. The opening degree determination data is set to a second target opening degree corresponding to a second target flow rate at which the second discharge temperature coincides with or approaches the second set temperature. In this state, the processing liquid having a heating temperature is supplied to the second pipe. Thereby, the processing liquid having the second set temperature or a temperature almost the same as the second set temperature is ejected from the second nozzle.

The amount of heat lost by the processing liquid until it is supplied to the substrate may differ depending on the flow path. This is because the length of the flow path or the components constituting the flow path may be different. As described above, if the opening degrees of the first flow regulating valve and the second flow regulating valve are individually set, the desired temperature and the actual temperature of the processing liquid supplied to the substrate can be reduced even in this case. Difference. This makes it possible to control the quality of the processed substrate with higher accuracy.

The second set temperature may be a value equal to the first set temperature or a value different from the first set temperature. The second opening degree determination data may be different from the first opening degree determination data, or may be the same data as the first opening degree determination data. The second opening degree determining unit may be the first opening degree determining unit or may be different from the first opening degree determining unit. The second opening degree setting section and the processing liquid supply section are also the same as the second opening degree determining section. The at least one heater may be one heater that heats the processing liquid supplied to both the first nozzle and the second nozzle, or may include a first heater that heats the processing liquid supplied to the first nozzle and A second heater that heats the processing liquid supplied to the second nozzle.

The substrate processing apparatus further includes a first substrate holding mechanism that holds a substrate processed by the processing liquid ejected from the first nozzle, and a second substrate holding mechanism that uses a substrate ejected from the second nozzle. The substrate processed by the processing liquid is held.

According to the above configuration, the processing liquid discharged from the first nozzle is supplied to the substrate held by the first substrate holding mechanism, and the processing liquid discharged from the second nozzle is supplied to the second substrate, which is different from the first substrate holding mechanism. The substrate held by the substrate holding mechanism. Even in such a case, the actual temperature of the processing liquid when discharged from the first nozzle and the time when discharged from the second nozzle can be set individually by setting the opening degrees of the first flow adjustment valve and the second flow adjustment valve. The actual temperature of the treatment liquid is consistent or close. This makes it possible to reduce the difference in quality between the substrate processed by the processing liquid ejected from the first nozzle and the substrate processed by the processing liquid ejected from the second nozzle.

The substrate processing apparatus further includes a substrate holding mechanism that holds the substrate processed by the processing liquid ejected from the first nozzle and the second nozzle while horizontally holding the substrate while passing through the substrate while surrounding the substrate. The vertical rotation axis of the central portion of the substrate rotates, the first nozzle ejects the processing liquid toward a first position, the first position is a position on the substrate held by the substrate holding mechanism, and the second position The nozzle ejects the processing liquid toward a second position, which is a position on the substrate held by the substrate holding mechanism, and is a position outside the first position.

According to the configuration, the processing liquid discharged from the first nozzle and the processing liquid discharged from the second nozzle are supplied to the same substrate. The first nozzle ejects the processing liquid toward a first position on the substrate, and the second nozzle ejects the processing liquid toward a second position on the same substrate. The second position is a position outside the first position in the radial direction of the substrate. Therefore, the processing liquid discharged from the second nozzle is adhered to the substrate outside the processing liquid discharged from the first nozzle.

The temperature of the processing liquid on the substrate tends to decrease as it moves away from the rotation axis. If the openings of the first flow control valve and the second flow control valve are individually set, the actual temperature of the processing liquid when discharged from the second nozzle can be made higher than the processing liquid when discharged from the first nozzle. The actual temperature. This makes it possible to reduce variations in the temperature of the processing liquid on the substrate and improve the uniformity of processing. Of course, you may eject the processing liquid of the same or almost the same temperature from a 1st nozzle and a 2nd nozzle.

The substrate processing apparatus further includes a common pipe, and supplies a processing liquid to both the first pipe and the second pipe.

With this configuration, the processing liquid flowing in the common pipe is supplied to both the first pipe and the second pipe. Therefore, at least the processing liquid having the same composition is discharged from both the first nozzle and the second nozzle. When the processing liquid ejected from the first nozzle and the second nozzle is supplied to different substrates, it is possible to reduce variations in processing between a plurality of substrates. When the processing liquid discharged from the first nozzle and the second nozzle is supplied to the same substrate, the uniformity of processing can be improved.

The substrate processing apparatus further includes a common pipe for supplying a processing liquid to both the first pipe and the second pipe. The substrate processing apparatus supplies phosphoric acid as a processing solution to the exposed silicon oxide film and silicon nitride. The substrate of the film is etched while suppressing the etching of the silicon oxide film and facing the silicon nitride film.

According to the above configuration, high-temperature phosphoric acid (for example, phosphoric acid having a boiling point at a concentration) heated by the heater is supplied from the common pipe to both the first pipe and the second pipe, and from the first nozzle and the first pipe. Both nozzles eject. The ejected phosphoric acid is supplied to a substrate on which the silicon oxide film and the silicon nitride film are exposed. Thereby, selective etching is performed while suppressing the etching of the silicon oxide film and etching the silicon nitride film.

In particular, if the actual temperature of the phosphoric acid when ejected from the second nozzle is higher than the actual temperature of the phosphoric acid when ejected from the first nozzle, the openings of the first flow rate adjustment valve and the second flow rate adjustment valve are individually set. , The variation in the temperature of phosphoric acid on the substrate can be reduced, and the uniformity of etching can be further improved. In addition, since phosphoric acid having the same composition is ejected from the first nozzle and the second nozzle toward the same substrate, it is possible to suppress or prevent the uniformity of the selectivity ratio (the amount of etching of the silicon nitride film / the amount of etching of the silicon oxide film) from decreasing.

The first opening degree setting unit sets the opening degree of the first flow adjustment valve to a first initial opening degree larger than the first target opening degree, and thereafter, sets the opening degree of the first flow adjustment valve. Decreasing from the first initial opening degree to the first target opening degree.

According to the above configuration, the first opening degree setting unit of the control device sets the opening degree of the first flow rate adjustment valve to a first initial opening degree greater than the first target opening degree. In this state, the first processing liquid supply unit of the control device supplies the processing liquid to the first nozzle through the first pipe. After that, the first opening degree setting unit of the control device reduces the opening degree of the first flow rate adjustment valve from the first initial opening degree to the first target opening degree. In this state, the first processing liquid supply unit of the control device supplies the processing liquid to the first nozzle through the first pipe.

When the processing liquid is first supplied to the first piping and the first nozzle, the first piping and the first nozzle are still in an ice-cold state, so the heat loss is relatively large. On the other hand, when a certain amount of time elapses after the start of the supply of the processing liquid, the first pipe and the first nozzle are warmed, so the amount of heat loss is reduced. Therefore, when the processing liquid of the same temperature is continuously supplied to the first pipe and the first nozzle at the same flow rate, the temperature of the processing liquid when discharged from the first nozzle changes with the passage of time.

According to the above configuration, the flow rate of the processing liquid supplied to the first piping and the first nozzle is reduced as time passes. In other words, when the supply of the processing liquid is started, the processing liquid is supplied to the first pipe and the first nozzle at a relatively large flow rate. Then, when the first pipe and the first nozzle become warm, the processing liquid is supplied to the first pipe and the first nozzle at a relatively small flow rate. This can reduce the amount of fluctuation in the temperature of the processing liquid when ejected from the first nozzle.

The substrate processing apparatus further includes a temperature sensor that detects a temperature of the processing liquid, and when the temperature of the processing liquid detected by the temperature sensor reaches a switching temperature, the first opening setting unit makes The opening degree of the first flow adjustment valve is reduced from the first initial opening degree to the first target opening degree.

According to the configuration, the temperature of the processing liquid before being supplied to the substrate or the processing liquid on the substrate is detected by the temperature sensor. When the temperature of the processing liquid detected by the temperature sensor reaches the switching temperature, that is, when it is confirmed that the first pipe and the first nozzle are warmed, the first opening setting section of the control device causes the first flow adjustment valve The opening degree of is reduced from the first initial opening degree to the first target opening degree. Therefore, it is possible to prevent the case where the processing liquid is continuously supplied to the first pipe and the first nozzle at a relatively large flow rate despite the warming of the first pipe and the first nozzle.

The temperature sensor can detect the temperature of the processing liquid before being supplied to the substrate, or the temperature of the processing liquid on the substrate, and can also detect the temperature of the processing liquid in the chamber containing the first nozzle. The temperature is detected. When detecting the temperature of the processing liquid before being supplied to the substrate, the temperature sensor may detect the temperature of the processing liquid in the first pipe, or may detect the temperature of the processing liquid in the first nozzle. .

Another embodiment of the present invention provides a substrate processing method, which is a method executed by a substrate processing apparatus including: at least one heater to heat a processing liquid; and a first pipe to the substrate. The at least one heater guides the processing liquid heated; the first flow rate adjusting valve changes the flow rate of the processing liquid supplied to the first pipe; and the first nozzle guides the processing liquid guided by the first pipe. Ejecting toward the substrate; and a control device that controls the at least one heater and the first flow rate adjustment valve.

The substrate processing method includes the following steps: an information obtaining step of obtaining a heating temperature indicating a target value of a temperature of a processing liquid heated by the at least one heater, and a temperature The target value of the temperature is the first set temperature lower than the heating temperature; the heating execution step causes the at least one heater to heat the processing liquid at the heating temperature; the first opening degree determination step is based on the first The opening degree determination data, the heating temperature and the first set temperature obtained in the information obtaining step determine a first target opening degree corresponding to a first target flow rate, and the first target flow rate causes the first 1 The ejection temperature is the same as or close to the first set temperature, and the first opening degree determination data is data stored in the memory device of the control device, and is supplied to the controller at the heating temperature. The opening degree of the first flow control valve corresponding to the flow rate of the processing liquid supplied to the first pipe when the processing liquid of the first pipe is discharged from the first nozzle at the first discharge temperature is prescribed. Data; a first opening degree setting step, setting the opening degree of the first flow rate adjustment valve to the first target opening degree; and a first treatment liquid supply step, supplying the treatment liquid to the place through the first pipe. The first nozzle is described. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

In the embodiment, at least one of the following features may be added to the substrate processing method.

The substrate processing apparatus further includes: a second nozzle that discharges the processing liquid; a second pipe that guides the processing liquid to the second nozzle; and a second flow rate adjustment valve for the processing liquid that is supplied to the second pipe. The flow rate is changed, and the memory device of the control device further memorizes second opening degree determination data for the processing liquid supplied to the second pipe at the heating temperature. Predetermined data of the opening degree of the second flow adjustment valve corresponding to the flow rate of the processing liquid supplied to the second pipe when the second discharge temperature is discharged from the second nozzle, and the substrate processing method The method further includes a step of determining a second opening degree based on the second opening degree determination data stored in the memory device, and the heating temperature and the second set temperature obtained by the information acquisition unit. A second target opening degree corresponding to a second target flow rate, the second target flow rate makes the second ejection temperature coincide or be close to the second set temperature; the second opening degree setting step changes the second opening degree The opening degree of the flow regulating valve is set as described A second target opening degree; and a second processing liquid supply step, wherein the processing liquid is supplied to the second nozzle through the second pipe. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

The substrate processing apparatus further includes a first substrate holding mechanism that holds a substrate processed by the processing liquid ejected from the first nozzle, and a second substrate holding mechanism that uses a substrate ejected from the second nozzle. The substrate processed by the processing liquid is held. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

The substrate processing apparatus further includes a substrate holding mechanism that holds the substrate processed by the processing liquid ejected from the first nozzle and the second nozzle while horizontally holding the substrate while passing through the substrate while surrounding the substrate. The vertical rotation axis of the central portion of the substrate rotates, and the substrate processing method further includes a first ejection step of ejecting the processing liquid toward the first position, and the first position is held by the substrate The second position is the position on the substrate held by the mechanism, and the second ejecting step causes the second nozzle to eject the processing liquid toward the second position, the second position being the position on the substrate held by the substrate holding mechanism, It is a position further outside than the said 1st position. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

The substrate processing apparatus further includes a common pipe, and supplies a processing liquid to both the first pipe and the second pipe. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

The substrate processing apparatus further includes a common pipe for supplying a processing liquid to both the first pipe and the second pipe, and the substrate processing method supplies phosphoric acid as a processing liquid to the exposed silicon oxide film and silicon nitride. The substrate of the film is etched while suppressing the etching of the silicon oxide film and facing the silicon nitride film. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

The first opening degree setting step sets the opening degree of the first flow rate adjustment valve to a first initial opening degree greater than the first target opening degree, and thereafter, makes the opening degree of the first flow rate adjustment valve. Decreasing from the first initial opening degree to the first target opening degree. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

The substrate processing apparatus further includes a temperature sensor that detects a temperature of the processing liquid. When the temperature of the processing liquid detected by the temperature sensor reaches a switching temperature, the first opening setting step enables The opening degree of the first flow adjustment valve is reduced from the first initial opening degree to the first target opening degree. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

Still another embodiment of the present invention provides a substrate processing apparatus including a heater for heating a processing liquid, a processing liquid pipe for guiding the processing liquid heated by the heater, and a substrate holding mechanism for The substrate is held; the nozzle ejects the processing liquid supplied through the processing liquid pipe toward the substrate held by the substrate holding mechanism; the valve adjusts the flow rate of the processing liquid flowing through the processing liquid pipe; A temperature sensor that detects the temperature of the processing liquid flowing in the processing liquid pipe, and an information acquisition mechanism that acquires a set temperature, the set temperature being a target value of the temperature of the processing liquid ejected from the nozzle; The control device controls the opening degree of the valve based on the temperature detected by the temperature sensor and the set temperature of the processing liquid acquired by the information acquisition mechanism. According to the configuration, the temperature of the processing liquid discharged from the nozzle can be brought close to the target temperature with a simple configuration.

The control device may also compare the set temperature obtained by the information acquisition mechanism with the temperature of the processing liquid detected by the temperature sensor, and determine the temperature of the set temperature detected by the temperature sensor. When the temperature of the processing liquid exceeds the set temperature, the opening degree of the valve is changed to reduce the flow rate of the processing liquid. When the temperature of the processing liquid detected by the temperature sensor is lower than In the case of the set temperature, the opening degree of the valve is changed to increase the flow rate of the processing liquid. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.

The aforementioned or further objects, features, and effects of the present invention will be made clear by the following description of embodiments with reference to the accompanying drawings.

FIG. 1 is a schematic view of a substrate processing apparatus 1 according to a first embodiment of the present invention as viewed from above.

The substrate processing apparatus 1 is a single-chip apparatus that processes a disc-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a plurality of load ports LP holding a plurality of carriers C that house a substrate W, and processes a substrate W transferred from the plurality of load ports LP using a processing fluid such as a processing liquid or a processing gas. A plurality of processing units 2 and a control device 3 that controls the substrate processing apparatus 1.

The substrate processing apparatus 1 further includes a transfer robot that transfers the substrate W between the loading port LP and the processing unit 2. The transfer robot includes an indexer robot IR and a center robot CR. The index robot IR transfers the substrate W between the loading port LP and the center robot CR. The center robot CR transfers the substrate W between the indexing robot IR and the processing unit 2. The index robot IR and the center robot CR include a hand supporting the substrate W.

The substrate processing apparatus 1 includes a plurality of (four) fluid tanks 4 that accommodate fluid devices such as an on-off valve 25 described later. The processing unit 2 and the fluid tank 4 are arranged on the outer wall 1 a of the substrate processing apparatus 1, and are covered by the outer wall 1 a of the substrate processing apparatus 1. A plurality of (four) medicinal solution cabinets 5 for storing a medicinal solution tank 31 and the like described later are arranged outside the outer wall 1 a of the substrate processing apparatus 1. The medicinal solution cabinet 5 may be disposed on the side of the substrate processing apparatus 1, or may be disposed below (underground) a clean room in which the substrate processing apparatus 1 is installed.

The plurality of processing units 2 form four towers arranged in a plan view so as to surround the central robot CR. Each tower includes three processing units 2 stacked on top of each other. The four medicinal solution cabinets 5 correspond to four towers, respectively. The four fluid tanks 4 respectively correspond to the four medicinal liquid cabinets 5. The chemical liquid in the chemical liquid cabinet 5 is supplied to the three processing units 2 included in the same tower through the corresponding fluid tank 4.

FIG. 2 is a schematic view of the inside of the processing unit 2 viewed horizontally.

The processing unit 2 includes a box-shaped chamber 6 having an internal space, and a spin clamp that rotates the substrate W around a vertical rotation axis A1 passing through a central portion of the substrate W while holding the substrate W horizontally in the chamber 6. A spin chuck 10 and a cylindrical cup 14 which receives the processing liquid discharged from the substrate W. The spin chuck 10 is an example of a substrate holding mechanism and a substrate holding unit.

The chamber 6 includes a box-shaped partition wall 8 provided with a loading / unloading port through which the substrate W passes, a shutter 9 for opening / closing the loading / unloading port, and clean air formed in the chamber 6 by a filter. Fan filter unit (FFU) 7 for down flow of clean air. The temperature in the chamber 6 is maintained constant by the clean air sent from the FFU 7. The central robot CR carries the substrate W into the chamber 6 through the carry-in / out port, and carries the substrate W out of the chamber 6 through the carry-in / out port.

The spin chuck 10 includes a disc-shaped spin base 12 held in a horizontal posture, a plurality of chuck pins 11 holding the substrate W in a horizontal posture above the spin base 12, and The spin motor 13 that rotates the plurality of chuck pins 11 to rotate the substrate W about the rotation axis A1. The spin chuck 10 is not limited to a clamp type chuck in which a plurality of chuck pins 11 are brought into contact with the outer peripheral surface of the substrate W, and may be adsorbed on a back surface (lower surface) of the substrate W which is a non-device forming surface A vacuum-type chuck that holds the substrate W horizontally is rotated on the upper surface of the spin base 12.

The cup 14 includes a cylindrical inclined portion 14a extending obliquely upward toward the rotation axis A1, a cylindrical guide portion 14b extending downward from a lower end portion (outer end portion) of the inclined portion 14a, and is formed to open upward. The liquid receiving part 14c of the annular groove. The inclined portion 14 a includes a ring-shaped upper end having an inner diameter larger than the inner diameter of the substrate W and the spin base 12. The upper end of the inclined portion 14 a corresponds to the upper end of the cup body 14. The upper end of the cup body 14 surrounds the substrate W and the spin base 12 in a plan view.

The processing unit 2 includes a cup lifting unit 15 for vertically lifting the cup 14 between an upper position (the position shown in FIG. 2) and a lower position. The upper position means that the upper end of the cup 14 is located at a position higher than the spin. The chuck 10 holds the holding position of the substrate W at an upper position, and the lower position means that the upper end of the cup 14 is located at a position lower than the holding position. When the processing liquid is supplied to the substrate W, the cup body 14 is disposed at the upper position. The processing liquid scattered from the substrate W to the outside is caught by the inclined portion 14 a and then collected by the guide portion 14 b into the liquid receiving portion 14 c.

The processing unit 2 includes a chemical solution nozzle 21 that ejects the chemical solution downward toward the upper surface of the substrate W held by the spin chuck 10. The medicinal solution nozzle 21 is connected to a medicinal solution pipe 22 in which an on-off valve 25 is inserted. The processing unit 2 includes a nozzle moving unit 27 that moves the chemical liquid nozzle 21 horizontally between a processing position and a retreat position, at which the chemical liquid ejected from the chemical liquid nozzle 21 is supplied to the upper surface of the substrate W, In the retracted position, the chemical liquid nozzle 21 is away from the substrate W in a plan view. The nozzle moving unit 27 is, for example, a swivel unit that horizontally moves a liquid medicine nozzle 21 around a nozzle rotation axis A2 extending vertically around the periphery of the cup body 14.

When the on-off valve 25 is opened, the medicinal solution is supplied from the medicinal solution pipe 22 to the medicinal solution nozzle 21 and is ejected from the medicinal solution nozzle 21. The chemical solution is, for example, phosphoric acid as an example of the etching solution. The chemical solution may be a liquid other than phosphoric acid. It may also contain, for example, sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia, aqueous hydrogen peroxide, organic acids (such as citric acid, oxalic acid, etc.), organic bases (such as tetramethylammonium hydroxide (Tetramethyl Ammonium Hydroxide (TMAH), etc.), a liquid of at least one of a surfactant and a preservative is supplied to the chemical liquid nozzle 21.

The processing unit 2 includes a rinse liquid nozzle 16 that ejects the rinse liquid downward toward the upper surface of the substrate W held by the spin chuck 10. The rinse liquid nozzle 16 is connected to a rinse liquid pipe 17 in which a rinse liquid valve 18 is inserted. The processing unit 2 may include a nozzle moving unit that moves the washing liquid nozzle 16 horizontally between the processing position and the retreat position. At the processing position, the washing liquid sprayed from the washing liquid nozzle 16 is supplied to the substrate W, and In the retracted position, the rinse liquid nozzle 16 is separated from the substrate W in a plan view.

When the flushing liquid valve 18 is opened, the flushing liquid is supplied from the flushing liquid pipe 17 to the flushing liquid nozzle 16 and ejected from the flushing liquid nozzle 16. The rinsing liquid is, for example, pure water (deionized water). The rinsing liquid is not limited to pure water, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm).

FIG. 3 is a schematic diagram showing a medicinal solution supply system according to the first embodiment of the present invention. In FIG. 3, the fluid tank 4 is represented by a one-dot chain line, and the medicinal solution cabinet 5 is represented by a two-dot chain line. The components arranged in the area surrounded by the one-point chain line are arranged in the fluid tank 4, and the components arranged in the area surrounded by the two-point chain line are arranged in the medicinal solution cabinet 5.

The substrate processing apparatus 1 includes a plurality of chemical liquid supply systems respectively corresponding to a plurality of towers formed by a plurality of processing units 2. The chemical liquid supply system supplies the chemical liquid to all the processing units 2 included in the same tower. FIG. 3 shows a medicinal solution supply system and three processing units 2 corresponding to the medicinal solution supply system.

The chemical liquid supply system includes a chemical liquid tank 31 that stores the chemical liquid supplied to the substrate W, and a circulation pipe 32 that forms an annular circulation path that circulates the chemical liquid in the chemical liquid tank 31. The chemical liquid supply system further includes a pump 34 that sends the chemical liquid in the chemical liquid tank 31 to the circulation pipe 32, a filter 35 that removes foreign matter such as particles from the chemical liquid, and A heater 33 that heats and adjusts the temperature of the chemical solution in the chemical solution tank 31. The pump 34, the filter 35, and the heater 33 are inserted into the circulation pipe 32.

The pump 34 always sends the chemical solution in the chemical solution tank 31 into the circulation pipe 32. The medicinal solution supply system may be provided with a pressurizing device that presses the medicinal solution in the medicinal solution tank 31 to the circulation pipe 32 by increasing the air pressure in the medicinal solution tank 31 instead of the pump 34. Both the pump 34 and the pressurizing device are examples of a liquid feeding device that sends the chemical liquid in the chemical liquid tank 31 to the circulation pipe 32.

An upstream end and a downstream end of the circulation pipe 32 are connected to the chemical liquid tank 31. The medicinal solution is sent from the medicinal solution tank 31 to the upstream end of the circulation pipe 32, and returns to the medicinal solution tank 31 from the downstream end of the circulation pipe 32. Thereby, the chemical liquid in the chemical liquid tank 31 circulates in a circulation path. During the circulation of the medicinal solution in the circulation path, the foreign matter contained in the medicinal solution is removed by the filter 35, and the medicinal solution is heated by the heater 33. Accordingly, the chemical solution in the chemical solution tank 31 is maintained at a fixed temperature higher than room temperature.

Three chemical liquid pipes 22 respectively corresponding to the three processing units 2 included in the same tower are connected to the same circulation pipe 32. Therefore, the chemical liquid in the same chemical liquid tank 31 is supplied to the three processing units 2 included in the same tower. The flow meter 23, the flow adjustment valve 24, the on-off valve 25, and the temperature sensor 26 are inserted into the respective chemical liquid pipes 22.

The flow rate of the chemical solution supplied to the chemical solution nozzle 21 through the chemical solution pipe 22 is changed by the flow rate adjustment valve 24. The switching of the supply and the stop of the chemical solution to the chemical solution nozzle 21 is performed by the on-off valve 25. When the on-off valve 25 is opened, the chemical solution is supplied to the chemical solution nozzle 21 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 24. The flow rate of the chemical solution supplied to the chemical solution nozzle 21 through the chemical solution pipe 22 is detected by the flow meter 23. The temperature of the chemical solution in the chemical solution pipe 22 is detected by the temperature sensor 26. The detection values of the flow meter 23 and the temperature sensor 26 are input to the control device 3.

FIG. 4 is a block diagram showing the electrical configuration of the substrate processing apparatus 1.

The control device 3 includes a computer body 41 and a peripheral device 44 connected to the computer body 41. The computer body 41 includes a central processing unit (CPU) 42 (central processing device) that executes various commands, and a main memory device 43 that stores information. The peripheral device 44 includes an auxiliary memory device 45 that stores information such as a program P, a reading device 46 that reads information from a removable media M, and a communication device 47 that communicates with other devices such as a host computer HC.

The control device 3 is connected to an input device 48 and a display device 49. The input device 48 is operated when an operator, such as a user or a maintenance person, inputs information into the substrate processing apparatus 1. The information is displayed on the screen of the display device 49. The input device 48 may be any of a keyboard, a pointing device, and a touch panel, or may be a device other than these. A touch panel display that doubles as the input device 48 and the display device 49 may be provided in the substrate processing apparatus 1.

The CPU 42 executes a program P stored in the auxiliary memory device 45. The program P in the auxiliary memory device 45 may be installed in the control device 3 in advance, or may be transmitted from the removable medium M to the auxiliary memory device 45 through the reading device 46, or may be transmitted from an external device such as the host computer HC through the communication device 47. Send to auxiliary memory device 45.

The auxiliary memory device 45 and the removable medium M are non-volatile memories that retain memory even when power is not supplied. The auxiliary memory device 45 is, for example, a magnetic memory device such as a hard disk drive. The removable medium M is, for example, an optical disc such as a compact disk or a semiconductor memory such as a memory card. The removable medium M is an example of a computer-readable recording medium on which the program P is recorded.

The auxiliary memory device 45 memorizes a plurality of schemes. The plan is information specifying the processing content, processing conditions, and processing order of the substrate W. The plan includes a set temperature described later. The plurality of schemes are different from each other in at least one of processing content, processing conditions, and processing order of the substrate W. The control device 3 controls the substrate processing device 1 so that the substrate W is processed according to a recipe specified by the host computer HC. The following steps are performed by controlling the substrate processing apparatus 1 by the control apparatus 3. In other words, the control device 3 is programmed to perform the following steps.

FIG. 5 is a flowchart illustrating an example of processing of the substrate W performed by the substrate processing apparatus 1.

A specific example of the processing of the substrate W is a selection of supplying phosphoric acid to the surface (device formation surface) of the substrate W (silicon wafer) exposing the silicon nitride film and the silicon oxide film, and selectively etching the silicon nitride film. Etching. In this case, phosphoric acid (strictly, an aqueous phosphoric acid solution), which is an example of a chemical solution, is maintained at its concentration boiling point by the heater 33 (see FIG. 3). The substrate W may be processed by selective etching using an etchant other than phosphoric acid, or may be processed other than selective etching such as cleaning.

When the substrate W is processed by the substrate processing apparatus 1, a carrying-in step of carrying the substrate W into the chamber 6 is performed (step S1 in FIG. 5).

Specifically, in a state where the liquid medicine nozzle 21 is retracted from above the substrate W and the cup 14 is in a lower position, the center robot CR (see FIG. 1) supports the substrate W with the hand while allowing the hand to enter the chamber. 6 within. Then, the center robot CR places the substrate W on the hand on the spin chuck 10 with the surface of the substrate W facing upward. After the spin motor 13 holds the substrate W with the chuck pin 11, the substrate W starts to rotate. After the center robot CR places the substrate W on the spin chuck 10, the center robot CR retracts the hand from the inside of the chamber 6.

Next, a chemical solution supply step is performed, and phosphoric acid as an example of the chemical solution is supplied to the substrate W (step S2 in FIG. 5).

Specifically, the nozzle moving unit 27 moves the chemical liquid nozzle 21 to the processing position, and the cup lifting unit 15 raises the cup 14 to the upper position. Then, the on-off valve 25 is opened, and the chemical liquid nozzle 21 starts to emit phosphoric acid. When phosphoric acid is sprayed from the chemical liquid nozzle 21, the nozzle moving unit 27 may move the chemical liquid nozzle 21 between the central processing position and the peripheral processing position, or may use the phosphoric acid injection position at the center of the upper surface of the substrate W. The chemical liquid nozzle 21 is stationary. At the central processing position, phosphoric acid sprayed from the chemical liquid nozzle 21 is adhered to the center portion of the upper surface of the substrate W. At the peripheral processing position, phosphoric acid sprayed from the chemical liquid nozzle 21 is adhered to the substrate W. Peripheral surface of the upper surface.

After the phosphoric acid ejected from the chemical solution nozzle 21 adheres to the upper surface of the substrate W, it flows outward along the upper surface of the substrate W being rotated. As a result, a liquid film of phosphoric acid covering the entire region of the upper surface of the substrate W is formed, and phosphoric acid is supplied to the entire region of the upper surface of the substrate W. Especially when the nozzle moving unit 27 moves the chemical liquid nozzle 21 between the central processing position and the peripheral processing position, the entire area of the upper surface of the substrate W is scanned at the position where the phosphoric acid is injected, so the phosphoric acid is uniformly supplied. To the entire area of the upper surface of the substrate W. Thereby, the upper surface of the substrate W is processed uniformly. When a predetermined time elapses after the on-off valve 25 is opened, the on-off valve 25 is closed. Thereafter, the nozzle moving unit 27 moves the chemical liquid nozzle 21 to the retreat position.

Next, a washing liquid supply step is performed, and pure water as an example of the washing liquid is supplied to the upper surface of the substrate W (step S3 in FIG. 5).

Specifically, the flushing liquid valve 18 is opened, and the flushing liquid nozzle 16 starts to spray pure water. Pure water adhering to the upper surface of the substrate W flows outward along the upper surface of the substrate W being rotated. The phosphoric acid on the substrate W is rinsed with pure water sprayed from the rinse liquid nozzle 16. Thereby, a liquid film of pure water covering the entire area of the upper surface of the substrate W is formed. When a predetermined time elapses after the flushing liquid valve 18 is opened, the flushing liquid valve 18 is closed to stop the ejection of pure water.

Next, a drying step is performed, and the substrate W is dried by the rotation of the substrate W (step S4 in FIG. 5).

Specifically, the spin motor 13 accelerates the substrate W in the rotation direction, and thereby rotates the substrate W at a high rotation speed (for example, thousands of rpm) that is higher than the rotation speed of the substrate W in the chemical solution supply step and the rinse solution supply step. Thereby, the liquid is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after the substrate W starts to rotate at a high speed, the spin motor 13 stops rotating. As a result, the substrate W stops rotating.

Next, a carrying-out step is performed, and the substrate W is carried out from the chamber 6 (step S5 in FIG. 5).

Specifically, the cup lifting unit 15 lowers the cup 14 to a lower position. Then, the center robot CR (see FIG. 1) causes the hand to enter the chamber 6. The center robot CR supports the substrate W on the spin chuck 10 by hand after the plurality of chuck pins 11 release the grip of the substrate W. After that, the center robot CR retracts the hand from the inside of the chamber 6 while supporting the substrate W with the hand. Thereby, the processed substrate W is carried out from the chamber 6.

FIG. 6 is a block diagram showing functional blocks of the control device 3. Table 1 is a table showing an example of the opening degree determination data stored in the control device 3. The information acquisition section 51, the heating execution section 52, the opening degree determination section 53, the opening degree setting section 54, and the processing liquid supply section 55 shown in FIG. 6 are executed by the CPU 42 executing a program P installed in the control device 3. Implemented function blocks.

The control device 3 includes an information acquisition unit 51 that acquires information input to the substrate processing apparatus 1. The information acquired by the information acquisition unit 51 may be information input to the substrate processing apparatus 1 from an external device such as a host computer HC, or may be information input to the substrate processing apparatus 1 by an operator via the input device 48. The information acquired by the information acquisition unit 51 includes a heating temperature and a set temperature described later.

The control device 3 includes a heating execution unit 52 that causes the heater 33 to heat the chemical solution at a heating temperature. The heating temperature is a target value of the temperature of the chemical solution heated by the heater. The heating temperature is input to the substrate processing apparatus 1 before the host computer HC designates a scheme, for example. The heating execution unit 52 causes the heater 33 to heat the chemical solution at a heating temperature until the carrier C containing the substrate W to be processed is transferred to the substrate processing apparatus 1, for example. Therefore, when the carrier C is transferred to the substrate processing apparatus 1, the transfer and processing of the substrate W can be started immediately.

The control device 3 includes a plurality of sets of opening degree determination sections 53, opening degree setting sections 54, and a processing liquid supply section 55. The control device 3 stores a plurality of opening degree determination data in the auxiliary storage device 45. The plurality of opening degree determination data respectively correspond to the plurality of processing units 2. Similarly, a plurality of sets of opening degree determination unit 53 and opening degree setting unit 54 respectively correspond to a plurality of processing units 2. That is, the dedicated opening degree setting data, the opening degree determining unit 53, and the opening degree setting unit 54 are provided for each processing unit 2.

The opening degree determination data is data that defines the relationship between the heating temperature, the ejection temperature, and the supply flow rate. The heating temperature is a target value of the temperature of the chemical solution heated by the heater 33. The discharge temperature is the actual temperature of the chemical solution when it is discharged from the chemical solution nozzle 21. The supply flow rate is the actual flow rate of the chemical solution supplied to the chemical solution pipe 22 when the chemical solution is supplied to the chemical solution pipe 22 at the heating temperature at the discharge temperature from the chemical solution nozzle 21. The opening degree of the flow rate adjustment valve 24 is proportional to the flow rate of the chemical solution supplied to the chemical solution pipe 22. Therefore, the degree-of-opening determination data can also be said to define the relationship between the heating temperature, the discharge temperature, and the degree of opening.

The target value of the temperature of the medicinal solution when ejected from the medicinal solution nozzle 21, that is, the set temperature is acquired by the information acquisition unit 51. The target value of the opening degree of the flow rate adjustment valve 24, that is, the target value of the flow rate of the chemical solution supplied to the chemical solution pipe 22 is determined based on the opening degree determination data, the heating temperature, and the set temperature. A target value of the opening degree of the flow rate adjustment valve 24 is defined as a target opening degree. The opening degree determination data may be a matrix that defines a plurality of combinations of the heating temperature, the ejection temperature, and the target opening degree, or may be a calculation formula that calculates the target opening degree based on the heating temperature and the ejection temperature.

Table 1 shows an example of the opening degree determination data as a matrix. In Table 1, Thx represents a heating temperature, Tdy represents a discharge temperature, and θxy represents a target opening degree (x and y represent positive integers). The left-hand column contains multiple heating temperatures. The upper row contains multiple ejection temperatures. When each of the heating temperature and the ejection temperature is determined, a target opening degree corresponding to them is determined. When the left end column does not include the heating temperature acquired by the information acquisition unit 51, the closest value may be selected from the left end column. Similarly, when the ejection temperature acquired by the information acquisition unit 51 is not included in the upper row, the closest value may be selected from the upper row. [Table 1] Thx: heating temperature Tdy: discharge temperature θxy: target opening degree (x = 1, 2, 3 ...) (y = 1, 2, 3 ...)

The opening degree determination unit 53 determines a target opening degree corresponding to a target flow rate based on the opening degree determination data and the heating temperature and the set temperature acquired by the information acquisition unit 51, the target flow rate making the ejection temperature coincide with or close to the set temperature. The target flow rate is a target value of the flow rate of the medicinal solution supplied to the medicinal solution pipe 22. The opening degree setting unit 54 sets the opening degree of the flow rate adjustment valve 24 to a target opening degree. The processing liquid supply unit 55 opens and closes the on-off valve 25 and supplies the chemical liquid to the chemical liquid nozzle 21 in this state. The specific operation of the flow rate adjustment valve 24 will be described later.

FIG. 7 is a step diagram showing an example of a flow from the start of heating the chemical solution to the supply of the heated chemical solution to the substrate W. FIG.

When the chemical solution to be supplied to the substrate W is started to be heated, the information acquisition unit 51 of the control device 3 acquires a heating temperature indicating a target value of the temperature of the chemical solution heated by the heater 33 (step S11 in FIG. 7). Thereafter, the heating execution unit 52 of the control device 3 causes the heater 33 to heat the chemical solution at the heating temperature (step S12 in FIG. 7). Thereby, heating of the medicinal solution is started, and the temperature of the medicinal solution in the medicinal solution tank 31 rises. When a certain amount of time elapses after the heating of the medicinal solution is started, the medicinal solution in the medicinal solution tank 31 is stabilized at a heating temperature or a temperature almost the same as the heating temperature.

The substrate W to be processed by the substrate processing apparatus 1 is transported to the loading port LP in a state of being stored in the carrier C (step S13 in FIG. 7). When the carrier C is transferred to the loading port LP, a signal designating a scheme to be applied to the substrate W in the carrier C is input from the host computer HC to the control device 3 (step S14 in FIG. 7). Thereby, the information acquisition unit 51 of the control device 3 acquires a target value of the temperature of the chemical solution when it is ejected from the chemical solution nozzle 21, that is, a set temperature lower than the heating temperature (step S15 in FIG. 7).

The opening degree determination unit 53 of the control device 3 determines the target opening degree corresponding to the target flow rate based on the opening degree determination data and the heating temperature and the set temperature acquired by the information acquisition unit 51 stored in the control device 3, and the target flow rate The discharge temperature is made equal to or close to the set temperature (step S16 in FIG. 7). After that, the opening degree setting unit 54 sets the opening degree of the flow rate adjustment valve 24 to the target opening degree (step S17 in FIG. 7). In this state, the treatment liquid supply unit 55 supplies the liquid medicine to the liquid medicine nozzle 21 via the liquid medicine pipe 22 (step S18 in FIG. 7). The supply of the chemical solution to the chemical solution nozzle 21 may be started after the opening degree of the flow rate adjustment valve 24 is set to the target opening degree, or may be started before that. The latter is shown in FIGS. 8 and 9.

FIG. 8 is a graph showing an example of temporal changes in the flow rate and temperature of the chemical solution supplied to the chemical solution nozzle 21. FIG. 9 is a graph showing another example of temporal changes in the flow rate and temperature of the chemical solution supplied to the chemical solution nozzle 21.

When the chemical liquid is started to be ejected from the chemical liquid nozzle 21, the control device 3 increases the opening degree of the flow rate adjustment valve 24 to an opening degree corresponding to a specified flow rate specified by the plan. The opening degree of the flow rate adjustment valve 24 corresponding to the specified flow rate is an example of an initial opening degree that is larger than the target opening degree. After the opening degree of the flow rate adjustment valve 24 is set to a size corresponding to the specified flow rate, the control device 3 opens the on-off valve 25 to cause the chemical liquid nozzle 21 to start ejecting the chemical liquid.

After the discharge of the medicinal solution is started, the flow rate of the opening of the flow adjustment valve 24 is changed based on the detection value of the flow meter 23 so that the medicinal solution is ejected from the medicinal solution nozzle 21 at a specified flow rate specified by the plan ( feedback) control. Specifically, the control device 3 increases and decreases the opening degree of the flow rate adjustment valve 24 based on the detection value of the flow meter 23.

As shown in FIG. 8, the flow rate of the chemical solution ejected from the chemical solution nozzle 21, that is, the ejection flow rate increases sharply after the on-off valve 25 is opened, and reaches a vicinity of a predetermined flow rate. After that, the discharge flow rate is controlled by the flow rate feedback to stabilize at or near the specified flow rate. On the other hand, the temperature of the medicinal solution when it is ejected from the medicinal solution nozzle 21, that is, the ejection temperature is slightly delayed from the increase in the flow rate, and then starts to increase sharply.

The control device 3 monitors the detected temperature calculated based on the detected value of the temperature sensor 26. When the detection temperature reaches the switching temperature, the control device 3 performs temperature feedback to change the opening degree of the flow rate adjustment valve 24 based on the detection value of the temperature sensor 26 so as to limit the detection temperature to a set temperature range including the set temperature. control. The set temperature is, for example, the middle value of the set temperature range. As long as it is a value within the set temperature range, the set temperature may not be the middle value of the set temperature range.

When the temperature feedback control is started, the control device 3 reduces the set flow rate indicating the target value of the flow rate of the chemical solution supplied to the chemical solution nozzle 21 from the specified flow rate to the target flow rate. Specifically, the control device 3 determines a target opening degree corresponding to a target flow rate based on the opening degree setting data, the heating temperature, and the setting temperature in advance, and the target flow rate makes the ejection temperature coincide or be close to the set temperature. When the temperature feedback control is started, the control device 3 reduces the opening degree of the flow rate adjustment valve 24 and approaches the target opening degree. After that, the control device 3 increases or decreases the opening degree of the flow rate adjustment valve 24 based on the detection value of the temperature sensor 26.

FIG. 8 shows an example in which the discharge flow rate is sharply reduced when the detected temperature reaches the switching temperature, and then the discharge flow rate is increased and decreased. The detected temperature is limited to the set temperature range after the temperature feedback control is started. During the execution of the temperature feedback control, although the detected temperature increases and decreases within the set temperature range, the amount of variation decreases with time. When a certain amount of time elapses after the temperature feedback control is started, the temperature is detected to be stable at or near a central value of a set temperature range. As a result, a chemical solution having a temperature equal to or substantially equal to the set temperature is ejected from the chemical solution nozzle 21.

In the example shown in FIG. 8, the case where the temperature feedback control is performed has been described, but as shown in FIG. 9, the control device 3 may not perform the temperature feedback control. In the example shown in FIG. 9, similarly to the example shown in FIG. 8, the set flow rate is initially set to the specified flow rate, and the opening degree of the flow rate adjustment valve 24 is set to a value corresponding to the specified flow rate. After that, the control device 3 changes the opening degree of the flow rate adjustment valve 24 to the target opening degree. The timing of changing the opening degree of the flow rate adjustment valve 24 to the target opening degree may be when the detection temperature reaches the switching temperature, or when a predetermined time elapses after the on-off valve 25 is opened. In the latter case, a timer is provided in the control device 3. In this case, the temperature sensor 26 is not needed.

The length of the flow path from the medicinal solution tank 31 to the medicinal solution nozzle 21 may differ depending on the plurality of medicinal solution nozzles 21. In this case, the amount of heat of the chemical solution lost until it is supplied to the substrate W varies depending on the flow path. The opening degree determination data is provided for each chemical liquid nozzle 21, and the setting of the opening degree of the flow rate adjustment valve 24 is performed for each chemical liquid nozzle 21. That is, the control for making the discharge temperature coincide or be close to the set temperature is performed for each of the chemical liquid nozzles 21. This makes it possible to reduce variations in the discharge temperature of the plurality of chemical liquid nozzles 21 and reduce the difference in processing quality among the plurality of substrates W processed by the different processing units 2.

As described above, in the first embodiment, the chemical solution heated at the heating temperature by the heater 33 is supplied to the chemical solution nozzle 21 through the chemical solution pipe 22. The ejection temperature, which indicates the temperature of the chemical solution when ejected from the chemical solution nozzle 21, varies not only in accordance with the temperature of the chemical solution supplied to the chemical solution pipe 22, but also in accordance with the flow rate of the chemical solution supplied to the chemical solution pipe 22. Variety. That is, when the supply flow rate of the chemical solution decreases, the discharge temperature decreases, and when the supply flow rate of the chemical solution increases, the discharge temperature increases. This is because the amount of heat loss is approximately constant regardless of the supply flow rate of the medicinal solution, while the heat capacity of the medicinal solution changes in accordance with the supply flow rate of the medicinal solution.

Even if the heating temperature is the same, if the supply flow rate of the chemical solution is different, the discharge temperature is also different. The degree-of-opening determination data that defines these relationships is stored in the control device 3. The supply flow rate of the medicinal solution is set based on the opening degree determination data so that the discharge temperature matches or approaches the set temperature. That is, the opening degree of the flow rate adjustment valve 24 that regulates the supply flow rate of the chemical solution is set to a target opening degree corresponding to a target flow rate at which the discharge temperature matches or approaches the set temperature. In this state, a chemical solution having a heating temperature is supplied to the chemical solution pipe 22. Thereby, a chemical liquid having a set temperature or a temperature almost the same as the set temperature is ejected from the chemical liquid nozzle 21.

In this way, not only the temperature of the heater 33 is properly managed, but also the flow rate of the chemical solution supplied to the chemical solution pipe 22 and the chemical solution nozzle 21, that is, the heat capacity of the chemical solution is appropriately adjusted in accordance with the heating temperature and the set temperature. The setting makes it possible to control the temperature of the chemical solution when ejected from the chemical solution nozzle 21 with higher accuracy. This makes it possible to reduce the difference between the desired temperature and the actual temperature of the chemical solution supplied to the substrate W. Furthermore, if the opening degree of the flow rate adjustment valve 24 is changed, the temperature of the chemical solution supplied to the substrate W can be changed without changing the temperature of the heater 33. Therefore, compared with the case where the temperature of the heater 33 is changed, the temperature of the chemical solution can be changed in a short time.

In the first embodiment, the medicinal solution flowing in the circulation pipe 32 as an example of the common piping is supplied to the plurality of medicinal solution pipes 22. Therefore, the chemical liquid having at least equal components is ejected from the plurality of chemical liquid nozzles 21. The chemical solution ejected from the plurality of chemical solution nozzles 21 is supplied to different substrates W. Therefore, it is possible to supply chemical liquids having at least equal components to different substrates W, and it is possible to reduce processing variations among the plurality of substrates W.

In the first embodiment, the opening degree setting unit 54 of the control device 3 sets the opening degree of the flow rate adjustment valve 24 to an initial opening degree larger than the target opening degree. Specifically, the opening degree setting unit 54 of the control device 3 sets the opening degree of the flow rate adjustment valve 24 to an opening degree corresponding to a specified flow rate specified by a plan. In this state, the treatment liquid supply unit 55 of the control device 3 supplies the treatment liquid to the treatment liquid nozzle 21 through the treatment liquid pipe 22. Thereafter, the opening degree setting unit 54 of the control device 3 reduces the opening degree of the flow rate adjustment valve 24 from the initial opening degree to the target opening degree. In this state, the treatment liquid supply unit 55 of the control device 3 supplies the treatment liquid to the treatment liquid nozzle 21 through the treatment liquid pipe 22.

When the medicinal solution pipe 22 and the medicinal solution nozzle 21 are first supplied with the medicinal solution, the medicinal solution pipe 22 and the medicinal solution nozzle 21 are still in an ice-cold state, and therefore the heat loss is relatively large. On the other hand, when a certain amount of time has elapsed after the start of the supply of the medicinal solution, the medicinal solution piping 22 and the medicinal solution nozzle 21 are warmed, so the amount of heat loss is reduced. Therefore, when the chemical solution of the same temperature is continuously supplied to the chemical solution pipe 22 and the chemical solution nozzle 21 at the same flow rate, the temperature of the chemical solution when ejected from the chemical solution nozzle 21 changes with the passage of time.

In the first embodiment, the flow rate of the medicinal solution supplied to the medicinal solution pipe 22 and the medicinal solution nozzle 21 is reduced with time. In other words, when the supply of the medicinal solution is started, the medicinal solution is supplied to the medicinal solution pipe 22 and the medicinal solution nozzle 21 at a relatively large flow rate. Then, when the chemical solution pipe 22 and the chemical solution nozzle 21 are warmed, the chemical solution is supplied to the chemical solution pipe 22 and the chemical solution nozzle 21 at a relatively small flow rate. Accordingly, it is possible to reduce the amount of fluctuation in the temperature of the chemical solution when ejected from the chemical solution nozzle 21.

In the first embodiment, the temperature of the chemical solution before being supplied to the substrate W is detected by the temperature sensor 26. When the temperature of the medicinal solution detected by the temperature sensor 26 reaches the switching temperature, that is, when it is confirmed that the medicinal solution pipe 22 and the medicinal solution nozzle 21 are warmed, the opening degree setting unit 54 of the control device 3 adjusts the flow rate The opening degree of the valve 24 is reduced to the target opening degree. Therefore, it is possible to prevent the situation where the medicinal solution pipe 22 and the medicinal solution nozzle 21 are continuously supplied with the medicinal solution to the medicinal solution pipe 22 and the medicinal solution nozzle 21 at a relatively large flow rate despite the warming.

Next, a second embodiment of the present invention will be described.

The second embodiment is different from the first embodiment mainly in that a plurality of nozzles that eject the same type of processing liquid toward the same substrate W are provided in the same processing unit 2.

In the following FIGS. 10 to 15, the same components as those shown in the aforementioned FIGS. 1 to 9 are denoted by the same reference numerals as those in FIG. 1 and the like, and descriptions thereof are omitted.

FIG. 10 is a schematic view of the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 of the second embodiment of the present invention viewed horizontally. FIG. 11 is a schematic plan view of the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62. FIG. 12 is a schematic view of the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 viewed from a direction of an arrow XIII shown in FIG. 10. 10 to 12 show a state where the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 are arranged at the processing position.

As shown in FIG. 10, the processing unit 2 includes a first chemical liquid nozzle 61 provided with a first ejection port 61 a that ejects a chemical liquid toward the upper surface of the substrate W, and a second chemical liquid nozzle 62 provided with a The plurality of second ejection ports 62a ejecting the chemical liquid on the upper surface. The first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 are held on a nozzle holder 60. The nozzle moving unit moves the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 between the processing position and the retreat position by moving the nozzle holder 60.

The first liquid medicine nozzle 61 includes a horizontal portion 61d extending horizontally away from the nozzle holder 60, a lower portion 61c extending downward from the horizontal portion 61d, and a discharge portion 61b extending downward from the lower portion 61c, and is smaller than The lower part 61c is thin. The second chemical liquid nozzle 62 includes an upper horizontal portion 62d extending horizontally away from the nozzle holder 60, a lower portion 62c extending downward from the upper horizontal portion 62d, and a lower horizontal portion 62b rotating toward the nozzle from the lower vertical portion 62c. The axis A2 extends horizontally.

The horizontal portion 61d of the first chemical liquid nozzle 61 and the upper horizontal portion 62d of the second chemical liquid nozzle 62 are parallel to each other and extend in the horizontal longitudinal direction D3. The first chemical liquid nozzle 61 is shorter than the second chemical liquid nozzle 62 in the longitudinal direction D3. As shown in FIG. 11, when the second chemical liquid nozzle 62 is disposed at the processing position, the vertical portion 62 c of the second chemical liquid nozzle 62 overlaps the central portion of the substrate W in a plan view, and the lower horizontal portion of the second chemical liquid nozzle 62 The outer end portion of 62b overlaps the outer peripheral portion of the substrate W in a plan view.

The upper horizontal portion 62 d of the second chemical liquid nozzle 62 is disposed above the lower horizontal portion 62 b of the second chemical liquid nozzle 62 and overlaps the lower horizontal portion 62 b in a plan view. As shown in FIG. 10, the lower horizontal portion 62b is supported by the upper horizontal portion 62d via a bracket 63 extending downward from the upper horizontal portion 62d. The plurality of second ejection ports 62 a are provided in the lower horizontal portion 62 b of the second chemical liquid nozzle 62. The plurality of second ejection outlets 62a are aligned in the axial direction of the lower horizontal portion 62b that coincides with the longitudinal direction D3. When the second chemical liquid nozzle 62 is disposed at the processing position, the innermost second ejection outlet 62a is located closer to the inside than the first ejection outlet 61a provided at the ejection portion 61b of the first chemical liquid nozzle 61, that is, the rotation axis A1 side. The outermost second ejection port 62a is located further outward than the first ejection port 61a.

When the first chemical liquid nozzle 61 is disposed at the processing position, the first chemical liquid nozzle 61 ejects the chemical liquid toward the center of the upper surface of the substrate W. When the second chemical liquid nozzle 62 is disposed at the processing position, the second chemical liquid nozzle 62 ejects the chemical liquid toward a plurality of liquid injection positions on the upper surface of the substrate W other than the central portion. The distances between the plurality of impact positions and the rotation axis A1 are different from each other. As long as the distances from the rotation axis A1 are different from each other, the plurality of liquid-impacting positions may be shifted in the circumferential direction of the substrate W (the rotation direction of the substrate W).

As shown in FIG. 10 and FIG. 12, the first ejection port 61 a ejects the medicinal solution in a first ejection direction D1 which is a direction from the first ejection port 61 a toward the center of the upper surface of the substrate W. The second ejection port 62a ejects the chemical solution in a second ejection direction D2, which is a direction from the second ejection port 62a toward the upper surface of the substrate W. The first discharge direction D1 is an oblique direction that is inclined in the radial direction of the substrate W with respect to the upper surface of the substrate W. The second discharge direction D2 is an oblique direction that is inclined with respect to the upper surface of the substrate W in the circumferential direction of the substrate W. At least one of the first discharge direction D1 and the second discharge direction D2 may be a vertical direction perpendicular to the upper surface of the substrate W.

When the spin chuck 10 rotates the substrate W, the chemical solution ejected from the first ejection port 61 a of the first chemical solution nozzle 61 adheres to the center portion of the upper surface of the substrate W and flows outward along the upper surface of the substrate W. The chemical solution ejected from the plurality of second ejection ports 62 a of the second chemical solution nozzle 62 adheres to a plurality of liquid-impacting positions on the upper surface of the substrate W and flows outward along the upper surface of the substrate W. Thereby, a liquid film of the chemical solution covering the entire area of the upper surface of the substrate W is formed, and the chemical solution is uniformly supplied to each portion of the upper surface of the substrate W.

FIG. 13 is a schematic diagram showing a medicinal solution supply system according to a second embodiment of the present invention.

The first chemical liquid nozzle 61 is connected to a first chemical liquid pipe 64, and the second chemical liquid nozzle 62 is connected to a second chemical liquid pipe 68. The first chemical liquid pipe 64 and the second chemical liquid pipe 68 are connected to the circulation pipe 32. Therefore, the chemical solution in the same chemical solution tank 31 is supplied to the first chemical solution nozzle 61 and the second chemical solution nozzle 62. The first flow meter 65, the first electric valve 66, and the first temperature sensor 67 are inserted into the first chemical liquid pipe 64. Similarly, the second flowmeter 69, the second electric valve 70, and the second temperature sensor 71 are inserted into the second chemical liquid pipe 68.

Each of the first electric valve 66 and the second electric valve 70 is an electric valve that switches between the supply and stop of liquid supply and the change in the liquid supply flow rate. The electric valve includes a valve body forming a flow path, a valve element disposed in the flow path, and an electric actuator that moves the valve element. The valve element is movable between a fully-closed position and a fully-open position, in which the electric valve is closed by contact between the valve element and the valve seat, and in the fully-open position, the opening degree of the electric valve is maximized. The control device 3 controls the electric actuator to position the valve element at an arbitrary position within a range from the fully closed position to the fully open position.

The processing unit 2 may include an on-off valve 25 and a flow rate adjustment valve 24 instead of the first electric valve 66. Similarly, the processing unit 2 may include an on-off valve 25 and a flow rate adjustment valve 24 instead of the second electric valve 70. The on-off valve 25 is a valve that is completely closed, and the flow adjustment valve 24 is a valve that is not completely closed. The valve element of the on-off valve 25 is movable between a fully closed position where the valve element contacts the valve seat and a fully open position where the valve element leaves the valve seat. The valve element of the flow adjustment valve 24 is movable between a low flow position where the valve element leaves the valve seat and a high flow position where the valve element leaves the valve seat. The opening degree of the flow adjustment valve 24 when the valve element is disposed at the low flow position is smaller than the opening degree of the flow adjustment valve 24 when the valve element is disposed at the high flow position.

The first temperature sensor 67 is disposed downstream of the first flow meter 65 and the first electric valve 66. That is, the first temperature sensor 67 is disposed on the first chemical liquid nozzle 61 side with respect to the first flow meter 65 and the first electric valve 66. Similarly, the second temperature sensor 71 is disposed on the second chemical liquid nozzle 62 side with respect to the second flow meter 69 and the second electric valve 70. The first temperature sensor 67 and the second temperature sensor 71 are arranged in the chamber 6. 10 and 11 show examples in which the first temperature sensor 67 and the second temperature sensor 71 are arranged on the nozzle holder 60.

The temperature detection position of the first temperature sensor 67 is close to the first chemical liquid nozzle 61. Therefore, the first detection temperature calculated based on the detection value of the first temperature sensor 67 can be brought close to being ejected from the first chemical liquid nozzle 61. The actual temperature of the medicinal solution at the time. Similarly, since the temperature detection position of the second temperature sensor 71 is close to the second chemical liquid nozzle 62, the second detection temperature calculated based on the detection value of the second temperature sensor 71 can be made close to the second chemical liquid. The actual temperature of the chemical solution when the nozzle 62 ejects. Accordingly, it is possible to monitor the actual temperature of the chemical liquid when ejected from the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 with higher accuracy.

FIG. 14 is a graph showing an example of a temporal change in the flow rate of the chemical solution supplied to the first chemical solution nozzle 61 and the second chemical solution nozzle 62. FIG. 15 is a graph showing an example of temporal changes in the temperature of the chemical solution supplied to the first chemical solution nozzle 61 and the second chemical solution nozzle 62.

The auxiliary storage device 45 of the control device 3 stores a plurality of plans and a plurality of opening degree determination data (see FIG. 4). The plurality of opening degree determination data include first opening degree determination data corresponding to the first chemical liquid nozzle 61 and second opening degree determination data corresponding to the second chemical liquid nozzle 62. The plan includes a first specified flow rate indicating a target value of the flow rate of the chemical liquid ejected from the first chemical liquid nozzle 61 and a second specified flow rate indicating a target value of the flow rate of the medical liquid ejected from the second chemical liquid nozzle 62. In addition, the plan includes a first set temperature indicating a target value of the temperature of the chemical liquid ejected from the first chemical liquid nozzle 61 and a second setting indicating a target value of the temperature of the medical liquid ejected from the second chemical liquid nozzle 62 temperature.

The first designated flow rate is an example of a first initial opening degree which is larger than the first target opening degree, and the second designated flow rate is an example of a second initial opening degree which is larger than the second target opening degree. The first designated flow rate and the second designated flow rate may be equal to or different from each other. The same applies to the first set temperature and the second set temperature. FIG. 14 shows an example in which the first designated flow rate is less than the second designated flow rate. FIG. 15 shows an example in which the first set temperature is lower than the second set temperature.

When the supply of the chemical solution to the first chemical solution nozzle 61 and the second chemical solution nozzle 62 is started, the control device 3 increases the opening degree of the first electric valve 66 to an opening degree corresponding to the first specified flow rate. Similarly, the control device 3 increases the opening degree of the second electric valve 70 to an opening degree corresponding to the second specified flow rate. In the second embodiment, the first electric valve 66 and the second electric valve 70 also serve as the on-off valve 25. Therefore, when the first electric valve 66 and the second electric valve 70 are opened, the chemical liquid starts from the first chemical liquid nozzle 61 and The second chemical liquid nozzle 62 ejects. FIG. 14 shows an example in which the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 start ejecting the chemical liquid at the same time. However, the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 may start ejecting the chemical liquid at different times.

As shown in FIG. 15, when the first electric valve 66 and the second electric valve 70 are opened, the first detection temperature and the second detection temperature increase sharply. When the first detection temperature reaches the first switching temperature, the control device 3 starts temperature feedback control so that the opening degree of the first electric valve 66 approaches the first target opening degree. Similarly, when the second detection temperature reaches the second switching temperature, the control device 3 starts temperature feedback control so that the opening degree of the second electric valve 70 approaches the second target opening degree. The first target opening degree is a value determined based on the first opening degree determination data, the heating temperature, and the first set temperature. The second target opening degree is a value determined based on the second opening degree determination data, the heating temperature, and the second set temperature. The first target temperature is lower than the second target temperature.

When the temperature feedback control is started, the control device 3 increases or decreases the opening degree of the first electric valve 66 based on the detection value of the first temperature sensor 67. Similarly, the control device 3 increases or decreases the opening degree of the second electric valve 70 based on the detection value of the second temperature sensor 71. When a certain amount of time has passed since the temperature feedback control was started, the first detection temperature is limited to the first set temperature range including the first set temperature, and the second detection temperature is limited to the second set temperature range including the second set temperature. . As a result, the chemical liquid having a temperature equal to or substantially equal to the first set temperature and the second set temperature is ejected from the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62.

As described above, in the second embodiment, the chemical solution ejected from the first chemical solution nozzle 61 and the chemical solution ejected from the second chemical solution nozzle 62 are supplied to the same substrate W. The first chemical liquid nozzle 61 ejects the chemical liquid toward the center portion of the upper surface of the substrate W, and the second chemical liquid nozzle 62 ejects the chemical liquid toward a plurality of liquid-impacting positions on the upper surface of the substrate W. The plurality of liquid-impacting positions are positions outside the central portion of the upper surface of the substrate W in the radial direction of the substrate W. Therefore, the chemical solution ejected from the second chemical solution nozzle 62 is adhered to the substrate W outside the chemical solution ejected from the first chemical solution nozzle 61.

The temperature of the chemical solution on the substrate W tends to decrease as it moves away from the rotation axis A1. If the openings of the first electric valve 66 and the second electric valve 70 are individually set, the actual temperature of the chemical liquid when ejected from the second chemical liquid nozzle 62 can be made higher than that from the first chemical liquid nozzle. 61 The actual temperature of the chemical solution at the time of ejection. This makes it possible to reduce variations in the temperature of the chemical solution on the substrate W, and to improve processing uniformity. Of course, it is also possible to eject the chemical liquid having the same temperature or almost the same temperature from the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62.

Next, a third embodiment of the present invention will be described.

The main difference between the third embodiment and the first and second embodiments is that in the third embodiment, the set openings of the flow adjustment valve 24, the electric valve 66, and the electric valve 70 are based on the temperature sensor 26, The temperature of the medicinal solution detected in the medicinal solution pipe 22 output from the temperature sensor 67 and the temperature sensor 71 and the set temperature acquired by the information acquisition unit are dynamically changed. The following can be applied to either the first embodiment or the second embodiment, but the configuration of the first embodiment will be described below as an example.

FIG. 16 is a block diagram showing functional blocks of the control device 103 according to the third embodiment of the present invention. Table 2 is a table showing an example of the opening degree determination data d stored in the control device 103. The information acquisition unit 151, the opening degree determination unit 153, and the opening degree setting unit 154 shown in FIG. 16 are functional blocks realized by the CPU 42 executing a program P installed in the control device 103. The opening degree determination unit 153 and the opening degree setting unit 154 are provided for each of the chemical liquid nozzles 21. The information acquisition unit 151 is an example of an information acquisition organization.

The substrate processing plan specifies a set temperature of the chemical solution ejected from the chemical solution nozzle 21 and a chemical solution ejection time. The information acquisition unit 151 acquires a set temperature of the medicinal solution from the protocol. The temperature sensor 26 detects the temperature of the chemical solution flowing through the chemical solution pipe 22 of each processing unit 2 and outputs it to the information acquisition unit 151. The information acquisition unit 151 acquires the detection temperature, the set temperature, and the opening degree setting data d of the chemical solution, and outputs them to the opening degree determination unit 153. The opening degree determination unit 153 determines the set opening degree based on the information output from the information acquisition unit 151. The opening degree setting unit 154 controls the flow rate adjusting valves 24 so that each flow rate adjusting valve 24 becomes a set opening degree determined by the opening degree determining unit 153.

Table 2 is a table showing an example of the opening degree determination data d in the third embodiment, and the table stores three-level opening degree setting data. The minimum opening degree p1 corresponds to the minimum opening degree of the flow regulating valve 24, and the maximum opening degree p3 corresponds to the maximum opening degree of the flow regulating valve 24. The intermediate opening degree p2 is an opening degree of the flow adjustment valve 24 through which an intermediate flow rate can be passed. The intermediate flow rate is a flow rate that flows through the flow adjustment valve 24 when the minimum opening degree p1 is set and a passing flow rate when the maximum opening degree p3 is set. The intermediate flow rate of the flow rate of the regulating valve 24. The opening degree setting data d may be different depending on the plan and the flow adjustment valve 24. [Table 2]

FIG. 17 is a view showing a procedure of adjustment of the flow rate adjustment valve 24 in the third embodiment. When the step of FIG. 17 is started, the chemical solution is heated and circulated in the circulation pipe 32 (see FIG. 2), and the temperature of the chemical solution is stabilized at a set temperature. A substrate W is held on the spin base 12 of the processing unit 2.

First, a scheme to be executed by the processing unit 2 is specified (step S114). Next, the information acquisition unit 151 acquires the set temperature of the medicinal solution and the ejection time of the medicinal solution from the designated plan. In addition, the information acquisition unit 151 acquires the opening degree determination data d corresponding to the designated plan (step S115). The information acquisition unit 151 refers to the opening degree determination data d obtained in step S115 to obtain the intermediate opening degree p2 (step S116). The opening degree setting unit 154 adjusts the flow rate adjustment valve 24 so that the flow rate adjustment valve 24 has an intermediate opening degree p2 (step S117). The processing liquid supply unit 55 supplies the chemical liquid to the chemical liquid nozzle 21 through the chemical liquid pipe 22 in this state (step S118). Thereby, the chemical solution is ejected toward the substrate W from the chemical solution nozzle 21 at an intermediate flow rate. After the discharge of the medicinal solution is started, the information acquisition unit 151 acquires the detected temperature of the medicinal solution obtained by the temperature sensor 26 (step S119).

Next, the opening degree determination unit 153 determines a new opening degree based on the magnitude relationship between the detected temperature and the set temperature acquired in step S119 (step S120).

That is, when the detected temperature exceeds the set temperature, in order to reduce the flow rate of the chemical solution, the opening degree which is slightly smaller than the current set opening degree and not lower than the minimum opening degree p1 is determined as the latest opening degree. When the detection temperature is lower than the set temperature, in order to increase the flow rate of the medicinal solution, the opening degree which is slightly larger than the current set opening degree and does not exceed the maximum opening degree p3 is determined as the latest opening degree. When the detected temperature is the same as the set temperature, the current set opening degree is maintained at the latest opening degree.

Thereafter, the opening degree setting unit 154 controls the flow rate adjustment valve 24 so that the flow rate adjustment valve 24 becomes the set opening degree determined in step S120 (step S121).

Thereafter, the opening degree setting unit 154 determines whether or not the chemical liquid ejection time prescribed in the protocol has elapsed (step S122).

When the opening setting unit 154 determines that a predetermined chemical liquid ejection time has elapsed, the process proceeds to step S123, and the processing liquid supply unit 55 stops the chemical liquid supply to the chemical liquid nozzle 21. On the other hand, when the opening setting unit 154 determines that the chemical liquid ejection time has not elapsed, it returns to step S119 and executes the processing cycle of the steps S119 to S122 again.

Other embodiments

The present invention is not limited to the contents of the embodiment described above, and various changes can be made.

For example, in the embodiment described above, the case where the temperature of the chemical liquid is controlled by setting the flow rate is described. However, the temperature of liquids other than the chemical liquid may be controlled by setting the flow rate.

The chemical solution tank 31 and the heater 33 may be provided for each chemical solution nozzle 21.

When the supply of the medicinal solution to the medicinal solution nozzle 21 is started, the opening degree of the flow rate adjustment valve 24 is increased to an opening degree (initial opening degree) corresponding to the specified flow rate specified by the plan, and then the flow rate adjustment valve 24 The case in which the opening degree of φ is reduced to the target opening degree has been described, but as long as it is larger than the target opening degree, the initial opening degree may be different from the opening degree corresponding to the specified flow rate.

The number of the first discharge ports 61a provided in the first chemical liquid nozzle 61 may be two or more. In contrast, the number of the second discharge ports 62a provided in the second chemical liquid nozzle 62 may be one.

The substrate processing apparatus 1 is not limited to a device that processes a disc-shaped substrate W, and may be a device that processes a polygonal substrate W.

You may combine two or more of all the said structures. It is also possible to combine two or more of all the aforementioned steps.

In addition, various design changes can be implemented within the scope of the matters described in the patent application scope.

1‧‧‧ substrate processing device

1a‧‧‧outer wall

2‧‧‧ processing unit

3.103‧‧‧control device

4‧‧‧fluid tank

5‧‧‧Medicine cabinet

6‧‧‧ chamber

7‧‧‧FFU

8‧‧‧ next door

9‧‧‧ bezel

10‧‧‧ Spin Chuck

11‧‧‧ chuck pin

12‧‧‧ Spin Base

13‧‧‧ Spin Motor

14‧‧‧ cup body

14a‧‧‧inclined

14b‧‧‧Guide

14c‧‧‧ Liquid collection department

15‧‧‧ Cup Lifting Unit

16‧‧‧Flushing nozzle

17‧‧‧Flushing liquid pipe

18‧‧‧Flushing valve

21‧‧‧medicine nozzle

22‧‧‧medicine piping

23‧‧‧Flowmeter

24‧‧‧Flow regulating valve

25‧‧‧Open and close valve

26‧‧‧Temperature sensor

27‧‧‧Nozzle moving unit

31‧‧‧ medicine tank

32‧‧‧Circular piping

33‧‧‧heater

34‧‧‧Pump

35‧‧‧filter

41‧‧‧Computer Body

42‧‧‧CPU

43‧‧‧Master memory device

44‧‧‧ Peripherals

45‧‧‧ auxiliary memory device

46‧‧‧Reading device

47‧‧‧communication device

48‧‧‧ input device

49‧‧‧display device

51, 151‧‧‧ Information Acquisition Department

52‧‧‧Heating executive department

53, 153‧‧‧ opening decision department

54, 154‧‧‧ opening setting department

55‧‧‧ Treatment liquid supply department

60‧‧‧Nozzle holder

61‧‧‧The first liquid medicine nozzle

61a‧‧‧The first spray outlet

61b‧‧‧Ejection Department

61c‧‧‧ vertical

61d‧‧‧Horizontal

62‧‧‧ 2nd liquid medicine nozzle

62a‧‧‧Second spray outlet

62b‧‧‧lower horizontal section

62c‧‧‧ vertical

62d‧‧‧Upper horizontal section

63‧‧‧Scaffold

64‧‧‧The first liquid medicine piping

65‧‧‧The first flowmeter

66‧‧‧The first electric valve / electric valve

67‧‧‧The first temperature sensor / temperature sensor

68‧‧‧ 2nd liquid medicine piping

69‧‧‧ 2nd flowmeter

70‧‧‧The second electric valve / electric valve

71‧‧‧Second temperature sensor / temperature sensor

A1‧‧‧axis of rotation

A2‧‧‧Nozzle rotation axis

C‧‧‧ carrier

CR‧‧‧ Center Robot

D1‧‧‧The first spray direction

D2‧‧‧second ejection direction

D3‧‧‧length direction

d‧‧‧ opening degree decision data / opening degree setting data

HC‧‧‧Host computer

IR‧‧‧ Index Robot

LP‧‧‧ Loading port

M‧‧‧ Removable media

P‧‧‧Program

S1 ~ S5, S11 ~ S18, S114 ~ S123‧‧‧steps

W‧‧‧ substrate

FIG. 1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention as viewed from above.

FIG. 2 is a schematic view in which the inside of the processing unit is viewed horizontally.

FIG. 3 is a schematic diagram showing a medicinal solution supply system according to the first embodiment of the present invention.

FIG. 4 is a block diagram showing an electrical configuration of the substrate processing apparatus.

FIG. 5 is a flowchart illustrating an example of processing of a substrate performed by a substrate processing apparatus.

Fig. 6 is a block diagram showing functional blocks of a control device.

FIG. 7 is a step diagram showing an example of a flow from the start of heating the chemical solution to the supply of the heated chemical solution to the substrate.

FIG. 8 is a graph showing an example of temporal changes in the flow rate and temperature of the chemical solution supplied to the chemical solution nozzle.

FIG. 9 is a graph showing another example of temporal changes in the flow rate and temperature of the chemical solution supplied to the chemical solution nozzle.

FIG. 10 is a schematic view showing the first chemical liquid nozzle and the second chemical liquid nozzle of the second embodiment of the present invention viewed horizontally.

11 is a schematic plan view of a first chemical liquid nozzle and a second chemical liquid nozzle.

FIG. 12 is a schematic view of the first chemical liquid nozzle and the second chemical liquid nozzle as viewed from a direction of an arrow XIII shown in FIG. 10.

FIG. 13 is a schematic diagram showing a medicinal solution supply system according to a second embodiment of the present invention.

FIG. 14 is a graph showing an example of a temporal change in the flow rate of the chemical liquid supplied to the first chemical liquid nozzle and the second chemical liquid nozzle.

15 is a graph showing an example of a temporal change in the temperature of a chemical solution supplied to a first chemical solution nozzle and a second chemical solution nozzle.

16 is a block diagram showing functional blocks of a control device according to a third embodiment of the present invention.

FIG. 17 is a step diagram showing an example of a flow of processing from the start of acquisition of a recipe to the stop of the supply of the heated chemical solution.

Claims (18)

A substrate processing apparatus comprising: at least one heater for heating a processing liquid; a first pipe for guiding the processing liquid heated by the at least one heater; a first flow rate adjusting valve for supplying A flow rate of the processing liquid to the first pipe is changed; a first nozzle ejects the processing liquid guided by the first pipe toward a substrate; and a control device for the at least one heater and the A first flow rate adjustment valve controls; and the control device includes: an information acquisition unit that acquires a heating temperature indicating a target value of a temperature of the processing liquid heated by the at least one heater, and a temperature from the first A target value of the temperature of the processing liquid when the nozzle is ejected, that is, a first set temperature lower than the heating temperature; and a heating execution unit that causes the at least one heater to perform the processing liquid at the heating temperature. Heating; a memory device that memorizes first opening degree determination data, and the first opening degree determination data is for the first piping supplied to the first pipe at the heating temperature; Pre-determined data on the degree of opening of the first flow adjustment valve corresponding to the flow rate of the treatment liquid supplied to the first pipe when the treatment liquid is discharged from the first nozzle at a first discharge temperature; The first opening degree determination unit determines the first target flow rate based on the first opening degree determination data stored in the memory device, and the heating temperature and the first set temperature obtained by the information acquisition unit. The corresponding first target opening degree, the first target flow rate makes the first discharge temperature coincide with or be close to the first set temperature; the first opening degree setting unit opens the first flow rate adjustment valve. The degree is set to the first target opening degree; and a first processing liquid supply unit supplies the processing liquid to the first nozzle through the first pipe. The substrate processing apparatus according to item 1 of the patent application scope, wherein the substrate processing apparatus further includes: a second nozzle that ejects a processing liquid; a second pipe that guides the processing liquid to the second nozzle; and 2 flow rate adjustment valves for changing the flow rate of the processing liquid supplied to the second pipe, and the information acquisition unit of the control device further acquires the temperature of the processing liquid when ejected from the second nozzle The target value is a second set temperature that is lower than the heating temperature, and the memory device of the control device also memorizes second opening degree determination data, and the second opening degree determination data The treatment liquid supplied to the second pipe with a heating temperature is discharged at a second discharge temperature from the second nozzle, and the first liquid corresponding to the flow rate of the treatment liquid supplied to the second pipe is discharged. (2) Data for specifying the opening degree of the flow adjustment valve, and the control device further includes: a second opening degree determining section, based on the second opening degree determining data stored in the memory device, and the information acquisition section. The obtained heating temperature And the second set temperature, determine a second target opening degree corresponding to the second target flow rate, and the second target flow rate makes the second ejection temperature coincide or be close to the second set temperature; the second opening degree setting An opening degree of the second flow rate adjustment valve is set to the second target opening degree; and a second processing liquid supply unit supplies the processing liquid to the second nozzle through the second pipe. The substrate processing apparatus according to item 2 of the patent application scope, wherein the substrate processing apparatus further includes: a first substrate holding mechanism that holds a substrate processed by the processing liquid ejected from the first nozzle; And a second substrate holding mechanism that holds a substrate processed by the processing liquid ejected from the second nozzle. The substrate processing apparatus according to item 2 of the scope of patent application, wherein the substrate processing apparatus further includes a substrate holding mechanism that horizontally holds and utilizes the substrate ejected from the first nozzle and the second nozzle. While the substrate processed by the processing liquid rotates the substrate around a vertical rotation axis passing through a central portion of the substrate, the first nozzle ejects the processing liquid toward a first position, and the first The position is a position on the substrate held by the substrate holding mechanism, the second nozzle ejects the processing liquid toward a second position, and the second position is held by the substrate holding mechanism The position on the substrate is a position outside the first position. The substrate processing apparatus according to claim 3 or 4, wherein the substrate processing apparatus further includes a common pipe, and supplies the processing liquid to both the first pipe and the second pipe. . The substrate processing apparatus according to item 4 of the scope of patent application, wherein the substrate processing apparatus further includes a common pipe, and supplies the processing liquid to both the first pipe and the second pipe, the substrate The processing device supplies phosphoric acid as the processing liquid to the substrate on which the silicon oxide film and the silicon nitride film are exposed, and etches the silicon nitride film while suppressing the etching of the silicon oxide film. The substrate processing apparatus according to any one of claims 1, 2, 3, 4, and 6, wherein the first opening setting unit adjusts the first flow rate. The opening degree of the valve is set to a first initial opening degree that is larger than the first target opening degree, and thereafter, the opening degree of the first flow adjustment valve is reduced from the first initial opening degree to the first target. Opening degree. The substrate processing apparatus according to item 7 of the scope of application for a patent, wherein the substrate processing apparatus further includes a temperature sensor that detects a temperature of the processing liquid, and when the temperature is detected by the temperature sensor, When the temperature of the processing liquid reaches the switching temperature, the first opening degree setting unit reduces the opening degree of the first flow rate adjustment valve from the first initial opening degree to the first target opening degree. A substrate processing method is a method executed by a substrate processing apparatus including: at least one heater that heats a processing liquid; and a first pipe that heats the at least one heater. The processing liquid is guided; a first flow rate adjustment valve changes a flow rate of the processing liquid supplied to the first pipe; and a first nozzle ejects the processing liquid guided by the first pipe toward a substrate. And a control device for controlling the at least one heater and the first flow adjustment valve, the substrate processing method includes the following steps: an information obtaining step of obtaining information indicating that the at least one heater has been heated A heating temperature of a target value of the temperature of the processing liquid and a target value of the temperature of the processing liquid when ejected from the first nozzle, that is, a first set temperature lower than the heating temperature; The at least one heater heats the processing liquid at the heating temperature; a first opening degree determining step, based on the first opening degree determining data, The heating temperature and the first set temperature obtained in the information acquisition step determine a first target opening degree corresponding to a first target flow rate, and the first target flow rate causes the first ejection temperature to be equal to the first target flow rate. The set temperature is the same or close, and the first opening degree determination data is data stored in a memory device of the control device, and is the same as the processing for supplying the first pipe at the heating temperature. Pre-determined data on the degree of opening of the first flow control valve corresponding to the flow rate of the processing liquid supplied to the first pipe when the liquid is discharged from the first nozzle at the first discharge temperature; The first opening degree setting step sets the opening degree of the first flow rate adjustment valve to the first target opening degree; and the first processing liquid supply step supplies the processing liquid to the first through the first pipe. The first nozzle is described. The substrate processing method according to claim 9 in the patent application scope, wherein the substrate processing apparatus further includes: a second nozzle that ejects a processing liquid; a second pipe that guides the processing liquid to the second nozzle; and 2 flow rate adjusting valves for changing the flow rate of the processing liquid supplied to the second pipe, and the memory device of the control device further memorizes second opening degree determination data, and the second opening degree determination data is A flow rate of the processing liquid supplied to the second pipe when the processing liquid supplied to the second pipe at the heating temperature is discharged from the second nozzle at a second discharge temperature. Corresponding data is provided for the opening degree of the second flow regulating valve, and the substrate processing method further includes the following steps: a second opening degree determining step based on the second opening degree stored in the memory device The determination data, the heating temperature and the second set temperature obtained by the information acquisition unit determine a second target opening degree corresponding to a second target flow rate, and the second target flow rate causes the second ejection temperature And the second set temperature Are consistent or close to each other; a second opening degree setting step of setting the opening degree of the second flow rate adjustment valve to the second target opening degree; and a second processing liquid supply step of processing the process via the second pipe The liquid is supplied to the second nozzle. The substrate processing method according to claim 10, wherein the substrate processing apparatus further includes: a first substrate holding mechanism configured to hold a substrate processed by the processing liquid ejected from the first nozzle; And a second substrate holding mechanism that holds a substrate processed by the processing liquid ejected from the second nozzle. The substrate processing method according to claim 10, wherein the substrate processing apparatus further includes a substrate holding mechanism, and the substrate holding mechanism horizontally holds and utilizes the substrate ejected from the first nozzle and the second nozzle. The substrate to be processed by the processing solution rotates the substrate around a vertical axis of rotation passing through a central portion of the substrate, and the substrate processing method further includes: a first ejecting step for causing the first nozzle Ejecting the processing liquid toward a first position, where the first position is a position on the substrate held by the substrate holding mechanism; and a second ejecting step ejecting the second nozzle toward a second position In the processing liquid, the second position is a position on the substrate held by the substrate holding mechanism, and is a position outside the first position. The substrate processing method according to claim 10 or 11, wherein the substrate processing apparatus further includes a common pipe, and supplies the processing liquid to both the first pipe and the second pipe. . The substrate processing method according to claim 11 in the patent application scope, wherein the substrate processing apparatus further includes a common pipe, and supplies the processing liquid to both the first pipe and the second pipe, and the substrate In the processing method, phosphoric acid as the processing solution is supplied to the substrate on which the silicon oxide film and the silicon nitride film are exposed, and the silicon oxide film is etched while suppressing the etching of the silicon oxide film. The substrate processing method according to any one of claims 9, 10, 11, 12, and 14, wherein the first opening setting step adjusts the first flow rate The opening degree of the valve is set to a first initial opening degree that is larger than the first target opening degree, and thereafter, the opening degree of the first flow adjustment valve is reduced from the first initial opening degree to the first target. Opening degree. The substrate processing method according to item 15 of the scope of patent application, wherein the substrate processing apparatus further includes a temperature sensor that detects a temperature of the processing liquid, and when the temperature is detected by the temperature sensor, When the temperature of the processing liquid reaches the switching temperature, the first opening degree setting step reduces the opening degree of the first flow rate adjustment valve from the first initial opening degree to the first target opening degree. A substrate processing apparatus includes a heater for heating a processing liquid, a processing liquid pipe for guiding the processing liquid heated by the heater, a substrate holding mechanism for holding a substrate, and a nozzle for The processing liquid supplied through the processing liquid pipe is ejected toward the substrate held by the substrate holding mechanism; a valve adjusts a flow rate of the processing liquid flowing through the processing liquid pipe; a temperature A sensor detects the temperature of the processing liquid flowing in the processing liquid pipe; an information acquisition mechanism obtains a set temperature, the set temperature being a target of the temperature of the processing liquid ejected from the nozzle And a control device that controls an opening degree of the valve based on a temperature detected by the temperature sensor and a set temperature of the processing liquid obtained by the information acquisition mechanism. The substrate processing apparatus according to item 17 of the scope of patent application, wherein the control device compares the set temperature obtained by the information acquisition mechanism and the temperature of the processing liquid detected by the temperature sensor. For comparison, when the temperature of the processing liquid detected by the temperature sensor exceeds the set temperature, the opening degree of the valve is changed to reduce the flow rate of the processing liquid. When the temperature of the processing liquid detected by the temperature sensor is lower than the set temperature, the opening degree of the valve is changed to increase the flow rate of the processing liquid.