JP6509583B2 - Substrate processing equipment - Google Patents

Description

  The present invention relates to a substrate processing apparatus for processing a substrate. Substrates to be processed include, for example, semiconductor wafers, substrates for liquid crystal displays, substrates for plasma displays, substrates for FED (Field Emission Display), substrates for optical disks, substrates for magnetic disks, substrates for magneto-optical disks, photomasks Substrates, ceramic substrates, substrates for solar cells, and the like.

  Patent Document 1 discloses a single-wafer substrate processing apparatus that processes substrates such as semiconductor wafers one by one. The substrate processing apparatus includes a spin chuck that rotates while holding the substrate horizontally, and a nozzle that discharges a processing solution having a temperature higher than room temperature toward the central portion of the upper surface of the substrate held by the spin chuck. . The high-temperature processing liquid discharged from the nozzles, after being deposited on the central portion of the upper surface of the substrate, flows outward along the upper surface of the rotating substrate. Thus, the high temperature processing solution is supplied to the entire top surface of the substrate.

Unexamined-Japanese-Patent No. 2006-344907

  The processing liquid deposited on the center of the top surface of the rotating substrate flows from the center to the periphery along the top surface of the substrate. In the process, the temperature of the processing solution gradually decreases. Therefore, the uniformity of the temperature is lowered and the uniformity of the treatment is deteriorated. If the flow rate of the processing liquid discharged from the nozzle is increased, the time required for the processing liquid to reach the upper peripheral portion of the substrate is shortened, and the temperature drop of the processing liquid is reduced. In this case, the processing liquid Consumption will increase.

  Therefore, one of the objects of the present invention is to improve the uniformity of processing while reducing the consumption of the processing liquid supplied to the substrate.

In order to achieve the above object, according to the first aspect of the present invention, there is provided a substrate holding unit for rotating a substrate about a vertical rotation axis passing through a central portion of the substrate while holding the substrate horizontally; And a processing liquid supply system for supplying a processing liquid to the substrate.
The processing liquid supply system includes a supply flow channel, a plurality of upstream flow channels, a plurality of discharge ports, a plurality of nozzles provided with the plurality of discharge ports, a holder for holding the plurality of nozzles, and a nozzle A nozzle movement for moving the plurality of nozzles such that the plurality of discharge ports move along an arc-shaped path having a center on the nozzle rotation axis by rotating the holder around the rotation axis. And a controller for controlling the processing liquid supply system . The supply channel guides the processing solution toward the plurality of upstream channels. The plurality of upstream flow channels branch from the supply flow channel, and guide the processing liquid supplied from the supply flow channel toward the plurality of discharge ports. The plurality of discharge ports are separated from the main discharge port for discharging the processing liquid toward the central portion of the upper surface of the substrate, and from the central portion of the upper surface, and the distances from the rotation axis are different. And a plurality of sub-discharge ports for discharging the processing liquid respectively to a plurality of positions, wherein the distance from the rotation axis is respectively arranged at a plurality of different positions, and the supply is performed via the plurality of upstream flow paths The processing solution is discharged toward the upper surface of the substrate held by the substrate holding unit. The plurality of upstream flow channels include a main upstream flow channel connected to the main discharge port, and a plurality of sub upstream flow channels connected to the plurality of sub discharge ports. In the control device, the processing discharged from the plurality of discharge ports in a state in which the substrate holding unit rotates the substrate, and the plurality of discharge ports discharge the processing liquid toward the upper surface of the substrate. The plurality of discharge ports are leveled once or more along the arc-shaped path while the distance from the rotation axis to the plurality of discharge ports is changed within a range in which the liquid is deposited on the upper surface of the substrate. The nozzle moving unit moves the plurality of nozzles so as to reciprocate.

  According to the present invention, the supply flow channel for guiding the treatment liquid is branched into the plurality of upstream flow channels. Thereby, the number of discharge ports can be increased. The processing liquid flowing through the supply flow channel is supplied to the discharge port through the upstream flow channel, and is discharged toward the upper surface of the substrate rotating around the rotation axis. The plurality of discharge ports are respectively disposed at a plurality of positions different in distance from the rotation axis. Therefore, the uniformity of the temperature of the processing liquid on the substrate can be improved as compared with the case where the processing liquid is discharged to only one discharge port. Thus, the processing uniformity can be improved while reducing the consumption of the processing liquid.

  In the case where the processing liquid is discharged to a plurality of radially separated positions to a plurality of discharge ports, supplying the processing liquid of the same quality to each part of the substrate is important for improving the processing uniformity. When a tank, a filter or the like is provided for each discharge port, a processing liquid having a quality different from that of the processing liquid supplied to a certain discharge port may be supplied to another discharge port. On the other hand, in the present embodiment, the supply flow channel is branched, and the treatment liquid supplied from the same flow channel (supply flow channel) is discharged to each discharge port. Thereby, the treatment liquid of the same quality can be discharged to each discharge port. Furthermore, compared with the configuration in which a tank, a filter, and the like are provided for each discharge port, the number of parts can be reduced, and maintenance work can be simplified.

Furthermore, according to the present invention, the nozzle moving unit reciprocates the plurality of ejection ports in a state where the substrate is rotating and the plurality of ejection ports eject the processing liquid. Thereby, the distance from the rotation axis to each discharge port changes. The processing liquid discharged from the plurality of discharge ports comes into contact with the plurality of landing positions in the upper surface of the substrate. The amount of etching of the substrate is the largest at the liquid deposition position, and decreases with distance from the liquid deposition position. Since the plurality of discharge ports move horizontally, the plurality of liquid deposition positions also move in the upper surface of the substrate accordingly. Thereby, the uniformity of the process can be improved as compared with the case where the plurality of discharge ports are not moved.

In the invention according to claim 2, the processing liquid supply system further includes a plurality of downstream channels, and the plurality of sub upstream channels are all branched upstream channels branched to the plurality of downstream channels. The substrate processing apparatus according to claim 1, wherein the sub-discharge port is provided for each of the downstream flow paths.
According to the present invention, the flow path for supplying the treatment liquid to the plurality of discharge ports is branched in multiple stages. That is, the supply flow channel is branched into a plurality of upstream flow channels (first branch), and the branched upstream flow channel included in the plurality of upstream flow channels is branched into a plurality of downstream flow channels (second branch) . Therefore, the number of discharge ports can be increased as compared with the case where the branch upstream flow channel is not included in the plurality of upstream flow channels. Thereby, the uniformity of the temperature of the processing liquid on the substrate can be further enhanced, and the uniformity of processing can be further enhanced.

In the invention according to claim 3, the substrate processing apparatus further includes a chamber for containing the substrate held by the substrate holding unit, and the branch upstream flow passage is formed by the plurality of downstream flow passages in the chamber. The substrate processing apparatus according to claim 2, which branches into
According to the present invention, the upstream ends of the plurality of downstream flow channels are disposed in the chamber. The branch upstream channel branches into a plurality of downstream channels in the chamber. Therefore, the length (the length in the direction in which the liquid flows) of each downstream flow passage can be shortened as compared with the case where the branched upstream flow passage is branched outside the chamber. Thereby, the temperature fall of the process liquid by the heat transfer from a process liquid to a downstream flow path can be suppressed.

  In the invention according to claim 4, the processing liquid supply system further includes an upstream heater and a plurality of downstream heaters, and the upstream heater heats the processing liquid supplied to the supply flow channel at an upstream temperature. The plurality of downstream heaters are respectively connected to the plurality of sub-upstream channels at positions upstream of the plurality of sub-discharge ports, and the processing temperature flowing through the plurality of sub-upstream channels is increased to the upstream temperature The substrate processing apparatus according to any one of claims 1 to 3, wherein heating is performed at a higher downstream temperature.

  When the processing liquid is at a higher temperature than the substrate, the heat of the processing liquid is dissipated to the substrate. In addition, since the processing liquid rotates with the substrate, the processing liquid on the substrate flows outward along the upper surface of the substrate while being cooled by air. The peripheral speed of each part of the substrate increases with distance from the rotation axis. The processing liquid on the substrate is more easily cooled as the peripheral speed is higher. In addition, assuming that the upper surface of the substrate can be divided into a plurality of annular regions at equal intervals in the radial direction, the area of each region increases with distance from the rotation axis. If the surface area is large, heat is easily transferred from the treatment solution to the annular region. Therefore, if the temperatures of the processing solutions discharged from the discharge ports are all the same, sufficient temperature uniformity may not be obtained.

  According to the present invention, the processing liquid heated to the downstream temperature higher than the upstream temperature by the downstream heater is supplied from the plurality of sub-upstream flow paths to the plurality of sub-discharge ports, and is discharged from these discharge ports. That is, while the processing liquid of the upstream temperature is discharged from the main discharge port, the processing liquid having a temperature higher than the upstream temperature is discharged from the sub discharge port. As described above, since the temperature of the processing liquid supplied to the upper surface of the substrate gradually increases as it is separated from the rotation axis, the processing liquid having the same temperature is discharged onto the substrate compared to the case where the discharge ports are discharged. The uniformity of the temperature of the processing solution can be enhanced. Thus, the processing uniformity can be improved while reducing the consumption of the processing liquid.

  In the invention according to claim 5, the processing liquid supply system further includes a plurality of return flow paths, a plurality of downstream heaters, and a downstream switching unit, and the plurality of return flow paths include the plurality of secondary flow paths. The plurality of sub-upstream flow paths are respectively connected to the upstream side of the discharge port, and the plurality of downstream heaters are located upstream of the connection position of the return flow path and the sub-upstream flow path. Each of the plurality of sub-upstream flow paths is connected to heat the processing liquid flowing through the plurality of sub-upstream flow paths, and the downstream switching unit is configured to process the processing flow supplied from the supply flow path to the plurality of upstream flow paths The discharge state in which the liquid is supplied to the plurality of discharge ports, and the discharge stop state in which the processing liquid supplied from the supply flow path to the plurality of upstream flow paths is supplied to the plurality of return flow paths Switch to one of multiple states That is a substrate processing apparatus according to any one of claims 1-4.

  The temperature of the processing solution may greatly affect the processing of the substrate. If the downstream heater is stopped while the discharge is stopped, it takes time for the temperature of the processing liquid heated by the downstream heater to stabilize at the intended temperature when the operation of the downstream heater is resumed. Therefore, discharge of the processing liquid can not be resumed immediately, and throughput (the number of processed substrates per unit time) is reduced. Therefore, it is preferable to heat the processing liquid to the downstream heater even while the discharge is stopped.

According to this aspect of the invention, the processing liquid is supplied to the upstream flow path and the downstream heater is heated while the discharge is stopped. The processing liquid heated by the downstream heater flows from the upstream flow path to the return flow path without being discharged from the plurality of discharge ports. Therefore, the temperature of the downstream heater can be kept stable even while the discharge is stopped. Therefore, the discharge of the treatment liquid can be resumed immediately.
In the invention according to claim 6, the plurality of nozzles further includes a first nozzle and a second nozzle, and the plurality of discharge ports are a first discharge port provided in the first nozzle, And a second discharge port provided in the second nozzle, and arranged in a plan view in a radial direction perpendicular to the rotation axis, and the first nozzle includes a first arm portion extending in a horizontal longitudinal direction; A first end extending downward from the end of the first arm, and the second nozzle includes a second arm extending in the longitudinal direction, and a second end extending downward from the end of the second arm a second tip portion, the including a substrate processing apparatus according to any one of claims 1 to 5.

The first arm portion and the second arm portion may be aligned in a horizontal arrangement direction orthogonal to the longitudinal direction. In this case, the tip of the first arm and the tip of the second arm may be separated in the longitudinal direction in plan view such that the tip of the first arm is located on the rotation axis side. . According to this configuration , the first discharge port and the second discharge port are aligned in the radial direction in plan view. If the plurality of nozzles having the same length are arranged in the horizontal direction orthogonal to the longitudinal direction so that the plurality of discharge ports are arranged in the radial direction in plan view, the width of the plurality of nozzles is increased (see FIG. 9). If the plurality of nozzles having different lengths are vertically arranged so that the plurality of discharge ports are radially arranged in plan view, the height of the plurality of nozzles is increased (see FIG. 10).

  On the other hand, the first arm portion and the second arm portion are arranged in a horizontal arrangement direction orthogonal to the longitudinal direction, and the tip end of the first arm portion is positioned on the rotation axis side, By displacing the tip of the second arm in the longitudinal direction in plan view, the plurality of discharge ports can be arranged in the radial direction in plan view while suppressing both the width and height of the entire plurality of nozzles (see FIG. 4) ). Thereby, related members such as the plurality of nozzles and the standby pot can be miniaturized.

It is a schematic diagram which shows the processing liquid supply system of the substrate processing apparatus which concerns on one Embodiment of this invention, and has shown the processing liquid supply system of a discharge state. It is a schematic diagram which shows the processing liquid supply system of the substrate processing apparatus which concerns on one Embodiment of this invention, and has shown the processing liquid supply system of the discharge stop state. It is a typical front view which shows the inside of the processing unit with which the substrate processing apparatus was equipped. It is a schematic plan view which shows the inside of the processing unit with which the substrate processing apparatus was equipped. It is a typical front view showing a plurality of nozzles. It is a schematic plan view showing a plurality of nozzles. It is process drawing for demonstrating an example of the process of the board | substrate performed by a substrate processing apparatus. It is a graph which shows distribution of the etching amount of a board | substrate. It is a schematic plan view showing a plurality of nozzles concerning the 1st modification of the embodiment. It is a schematic diagram which shows the several nozzle which concerns on the 2nd modification of the said embodiment. FIG. 10 (a) is a schematic front view showing a plurality of nozzles, and FIG. 10 (b) is a schematic plan view showing a plurality of nozzles. It is a graph which shows the image of the thickness of the thin film before and behind processing, and the temperature of the processing liquid supplied to a board | substrate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
1 and 2 are schematic views showing a processing liquid supply system of a substrate processing apparatus 1 according to an embodiment of the present invention. FIG. 1 shows the treatment liquid supply system in the discharge state, and FIG. 2 shows the treatment liquid supply system in the discharge stop state.
The substrate processing apparatus 1 is a sheet-fed apparatus which processes disk-like substrates W such as semiconductor wafers one by one. The substrate processing apparatus 1 includes a processing unit 2 that processes a substrate W with a processing liquid, a transfer robot (not shown) that transfers the substrate W to the processing unit 2, and a control device 3 that controls the substrate processing apparatus 1. . The control device 3 is a computer including an arithmetic unit and a storage unit.

  The substrate processing apparatus 1 includes a plurality of fluid boxes 5 containing fluid devices such as valves 51 for controlling supply and stop of supply of processing liquid to the processing unit 2, and processing supplied to the processing unit 2 via the fluid box 5. And a plurality of storage boxes 6 for storing a tank 41 for storing the liquid. The processing unit 2 and the fluid box 5 are disposed in the frame 4 of the substrate processing apparatus 1. The chamber 7 and the fluid box 5 of the processing unit 2 are aligned in the horizontal direction. The storage box 6 is disposed outside the frame 4. The storage box 6 may be disposed in the frame 4.

FIG. 3 is a schematic front view showing the inside of the processing unit 2. FIG. 4 is a schematic plan view showing the inside of the processing unit 2.
As shown in FIG. 3, the processing unit 2 rotates the substrate W around a vertical rotation axis A1 passing through the central portion of the substrate W while holding the substrate W horizontally in the box-shaped chamber 7 and the chamber 7. It includes a spin chuck 11 and a cylindrical cup 15 for receiving the processing liquid discharged from the substrate W.

  As shown in FIG. 4, the chamber 7 includes a box-shaped partition wall 8 provided with a carry-in / out port 8a through which the substrate W passes, and a shutter 9 for opening / closing the carry-in / out port 8a. The shutter 9 is movable relative to the partition wall 8 between an open position where the loading / unloading port 8a is opened and a closed position (position shown in FIG. 4) where the loading / unloading port 8a is closed. The transport robot (not shown) carries the substrate W into the chamber 7 through the carry-in / out port 8a, and carries out the substrate W from the chamber 7 through the carry-in / out port 8a.

  As shown in FIG. 3, the spin chuck 11 includes a disk-shaped spin base 12 held in a horizontal posture, and a plurality of chuck pins 13 for holding the substrate W in a horizontal posture above the spin base 12. And a spin motor that rotates the substrate W around the rotation axis A1 by rotating the plurality of chuck pins. The spin chuck 11 is not limited to a clamping type chuck that brings the plurality of chuck pins 13 into contact with the peripheral end face of the substrate W, but adsorbs the back surface (bottom surface) of the substrate W which is a non-device forming surface to the top surface of the spin base 12 It may be a vacuum type chuck which holds the substrate W horizontally by the above.

  As shown in FIG. 3, the cup 15 includes a cylindrical splash guard 17 surrounding the spin chuck 11 around the rotation axis A1, and a cylindrical outer wall 16 surrounding the splash guard 17 around the rotation axis A1. The processing unit 2 has an upper position where the upper end of the splash guard 17 is positioned above the holding position of the substrate W by the spin chuck 11 (the position shown in FIG. 3) A guard lift unit 18 is provided to vertically move the splash guard 17 between a lower position located below the holding position.

  As shown in FIG. 3, the processing unit 2 includes a rinse liquid nozzle 21 that discharges the rinse liquid downward toward the upper surface of the substrate W held by the spin chuck 11. The rinse liquid nozzle 21 is connected to the rinse liquid piping 22 in which the rinse liquid valve 23 is interposed. The processing unit 2 may include a nozzle moving unit that moves the rinse liquid nozzle 21 between the processing position and the standby position.

  When the rinse liquid valve 23 is opened, the rinse liquid is supplied from the rinse liquid pipe 22 to the rinse liquid nozzle 21 and discharged from the rinse liquid nozzle 21. The rinse solution is, for example, pure water (deionized water). The rinse solution is not limited to pure water, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water of a diluted concentration (for example, about 10 to 100 ppm).

  As shown in FIG. 4, the processing unit 2 includes a plurality of nozzles 26 (first nozzle 26A, second nozzle 26B, third nozzle 26C, and fourth nozzle 26D) for discharging the chemical solution downward, and a plurality of nozzles 26. A plurality of nozzles 26 are provided between the processing position (the position shown by the two-dot chain line in FIG. 4) and the standby position (the position shown by the solid line in FIG. 4). And a nozzle moving unit 24 for moving the

  Typical examples of the chemical solution are etching solutions such as TMAH (tetramethyl ammonium hydroxide) and resist stripping solutions such as SPM (mixed solution containing sulfuric acid and hydrogen peroxide solution). The chemical solutions are not limited to TMAH and SPM, but include sulfuric acid, acetic acid, nitric acid, hydrochloric acid, hydrofluoric acid, ammonia water, hydrogen peroxide water, organic acids (eg citric acid, oxalic acid etc.), organic alkalis other than TMAH, surfactants, It may be a liquid containing at least one of the corrosion inhibitors.

As shown in FIG. 3, each nozzle 26 includes a nozzle body 27 cantilevered by a holder 25. The nozzle body 27 includes an arm 28 extending from the holder 25 in the horizontal longitudinal direction D1 and a tip 29 extending downward from the tip 28a of the arm 28. The tip end 28a of the arm portion 28 means a portion farthest from the holder 25 in the longitudinal direction D1 in a plan view.
As shown in FIG. 4, the plurality of arm portions 28 are arranged in the horizontal arrangement direction D2 orthogonal to the longitudinal direction D1 in the order of the first nozzle 26A to the fourth nozzle 26D. The plurality of arms 28 are disposed at the same height. The spacing between the two arm portions 28 adjacent to the arrangement direction D2 may be the same as any other spacing, or may be different from at least one of the other spacings. FIG. 4 shows an example in which a plurality of arm portions 28 are arranged at equal intervals.

The lengths of the plurality of arm portions 28 in the longitudinal direction D1 are shortened in the order of the first nozzle 26A to the fourth nozzle 26D. The tips of the plurality of nozzles 26 (the tips 28a of the plurality of arm portions 28) are offset in the longitudinal direction D1 so as to be arranged in the order of the first nozzle 26A to the fourth nozzle 26D in the longitudinal direction D1. The tips of the plurality of nozzles 26 are linearly arranged in a plan view.
The nozzle moving unit 24 moves the plurality of nozzles 26 along an arc-shaped path passing through the substrate W in plan view by rotating the holder 25 around the nozzle rotation axis A2 extending vertically around the cup 15 Let As a result, the plurality of nozzles 26 move horizontally between the processing position and the standby position. The processing unit 2 includes a bottomed cylindrical standby pot 35 disposed below the standby position of the plurality of nozzles 26. The waiting pot 35 is disposed around the cup 15 in plan view.

  The processing position is a position where the chemical solution discharged from the plurality of nozzles 26 lands on the upper surface of the substrate W. At the processing position, the plurality of nozzles 26 and the substrate W overlap in plan view, and the tips of the plurality of nozzles 26 in radial direction Dr in the order of the first nozzle 26A to the fourth nozzle 26D from the rotation axis A1 side in plan view. Line up. At this time, the tip of the first nozzle 26A overlaps the central portion of the substrate W in plan view, and the tip of the fourth nozzle 26D overlaps the peripheral portion of the substrate W in plan view.

  The standby position is a position where the plurality of nozzles 26 are retracted such that the plurality of nozzles 26 and the substrate W do not overlap in plan view. In the standby position, the tips of the plurality of nozzles 26 are located outside the cup 15 along the outer peripheral surface (the outer peripheral surface of the outer wall 16) of the cup 15 in plan view, and the order of the first nozzle 26A to the fourth nozzle 26D Aligned in the circumferential direction (direction around the rotation axis A1). The plurality of nozzles 26 are arranged in order of the first nozzle 26A to the fourth nozzle 26D so as to be away from the rotation axis A1.

Next, the plurality of nozzles 26 will be described with reference to FIGS. 5 and 6. Thereafter, the treatment liquid supply system will be described.
In the following description, “first” and “A” may be added to the beginning and the end of the configuration corresponding to the first nozzle 26A, respectively. For example, the upstream flow passage 48 corresponding to the first nozzle 26A may be referred to as "first upstream flow passage 48A". The same applies to the configuration corresponding to the second nozzle 26B to the fourth nozzle 26D.

In the following description, the heating temperature of the processing liquid by the upstream heater 43 may be referred to as the upstream temperature, and the heating temperature of the processing liquid by the downstream heater 53 may be referred to as the downstream temperature. The heating temperature of the processing liquid by the second downstream heater 53 to the fourth downstream heater 53 may be referred to as the second downstream temperature to the fourth heating temperature, respectively.
As shown in FIG. 5, the nozzle body 27 has a resin tube 30 for guiding the treatment liquid, a cored bar 31 having a cylindrical cross section surrounding the resin tube 30, and a resin coating 32 having a cylindrical cross section covering the outer surface of the core 31. And. Each nozzle 26 other than the first nozzle 26A further includes a nozzle head 33 attached to the tip 29 of the nozzle body 27.

  The nozzle body 27 forms one flow path extending along the nozzle body 27. The nozzle head 33 forms a plurality of flow paths for guiding the processing liquid supplied from the nozzle main body 27. The flow passage of the nozzle body 27 forms a discharge port 34 opened on the outer surface of the nozzle body 27. The plurality of flow paths of the nozzle head 33 form a plurality of discharge ports 34 opened on the outer surface of the nozzle head 33. The flow passage of the nozzle body 27 corresponds to a part of the upstream flow passage 48 described later. Each flow path of the nozzle head 33 corresponds to the downstream flow path 52 described later. The downstream ends of the first upstream channel 48A to the fourth upstream channel 48D are respectively disposed at a plurality of positions different in distance from the rotation axis A1.

  5 and 6 show an example in which the total number of the discharge ports 34 provided in the plurality of nozzles 26 is ten. The first nozzle 26 </ b> A includes one discharge port 34 provided in the nozzle body 27. Each nozzle 26 other than the first nozzle 26 </ b> A includes three discharge ports 34 provided in the nozzle head 33. The three discharge ports 34 provided in the same nozzle head 33 have an inner discharge port closest to the rotation axis line A1 among the three discharge ports 34 and an outer side furthest from the rotation axis line A1 among the three discharge ports 34. It is comprised by the discharge port and the intermediate discharge port arrange | positioned between the inner side discharge port and the outer side discharge port.

  As shown in FIG. 6, the plurality of discharge ports 34 are linearly arranged in a plan view. The distance between the two outlets 34 at both ends is equal to or less than the radius of the substrate W. The interval between the two adjacent discharge ports 34 may be the same as any other interval, or may be different from at least one of the other intervals. Also, the plurality of discharge ports 34 may be disposed at the same height, or may be disposed at two or more different heights.

  When the plurality of nozzles 26 are arranged at the processing position, the plurality of discharge ports 34 are respectively arranged at a plurality of positions different in distance from the rotation axis A1 (the shortest distance in plan view). At this time, the innermost discharge port (first discharge port 34A) closest to the rotation axis A1 among the plurality of discharge ports 34 is disposed above the central portion of the substrate W and rotates among the plurality of discharge ports 34. The outermost discharge port (fourth discharge port 34D) farthest from the axis A1 is disposed above the peripheral portion of the substrate W. The plurality of discharge ports 34 are arranged in the radial direction Dr in plan view.

  The first discharge port 34A provided in the first nozzle 26A is a main discharge port that discharges the processing liquid toward the central portion of the upper surface of the substrate W. The second discharge port 34B to the fourth discharge port 34D provided in each nozzle 26 other than the first nozzle 26A are a plurality of sub-discharge ports that discharge the processing liquid toward a part of the upper surface of the substrate W other than the central portion. It is. The first upstream flow path 48A connected to the first discharge port 34A is a main upstream flow path, and the second upstream flow path 48B to fourth upstream flow connected to the second discharge port 34B to the fourth discharge port 34D. The path 48D is a plurality of sub upstream flow paths.

  As shown in FIG. 5, each discharge port 34 discharges the chemical solution in a discharge direction perpendicular to the top surface of the substrate W. The plurality of discharge ports 34 discharge the chemical solution toward a plurality of liquid deposition positions in the upper surface of the substrate W. The plurality of landing positions are different positions at different distances from the rotation axis A1. The liquid deposition position closest to the rotation axis A1 among the plurality of liquid deposition positions is referred to as the first liquid deposition position, and the liquid deposition position closest to the rotation axis A1 second among the plurality of liquid deposition positions is the second liquid deposition. In terms of position, the chemical solution discharged from the first discharge port 34A is deposited at the first liquid deposition position, and the chemical solution discharged from the second discharge port 34B is deposited at the second liquid deposition position.

Next, the treatment liquid supply system will be described in detail with reference to FIGS. 1 and 2.
The treatment liquid supply system includes a chemical solution tank 41 for storing a chemical solution, a chemical solution flow channel 42 for guiding a chemical solution sent from the chemical solution tank 41, and a chemical solution flowing in the chemical solution flow channel 42 from room temperature (eg, 20 to 30 ° C.). The upstream heater 43 adjusts the temperature of the chemical solution in the chemical solution tank 41 by heating at a high upstream temperature, the pump 44 which sends the chemical solution in the chemical solution tank 41 to the chemical solution channel 42, and the chemical solution in the chemical solution channel 42 And a circulation channel 40 returned to the chemical solution tank 41.

The processing liquid supply system includes a supply valve 45 for opening and closing the chemical solution flow channel 42, a circulation valve 46 for opening and closing the circulation flow channel 40, and a supply flow channel 47 connected to the chemical solution flow channel 42. The upstream switching unit includes a supply valve 45.
The processing liquid supply system includes a plurality of upstream flow paths 48 for guiding the liquid supplied from the supply flow path 47 toward the plurality of discharge ports 34 and a plurality of flow paths of the liquid flowing in the plurality of upstream flow paths 48. And a plurality of flow control valves 50 for changing the flow rate of the liquid flowing in the plurality of upstream flow paths 48, and a plurality of discharge valves 51 for respectively opening and closing the plurality of upstream flow paths 48. Although not shown, the flow control valve 50 includes a valve body that opens and closes a flow path, and an actuator that changes the opening degree of the valve body. The actuator may be a pneumatic actuator or an electric actuator, or may be an actuator other than these.

The processing liquid supply system includes a plurality of downstream flow paths 52 for guiding the liquid supplied from the upstream flow path 48 toward the plurality of discharge ports 34. The downstream end of each upstream flow passage 48 other than the first upstream flow passage 48A branches into a plurality of downstream flow passages 52. That is, each upstream flow path 48 other than the first upstream flow path 48A is a branched upstream flow path branched to the plurality of downstream flow paths 52.
1 and 2 show an example in which the branch upstream flow channel is branched into two downstream flow channels 52. FIG. 5 shows an example in which the branch upstream flow channel is branched into three downstream flow channels 52. The three downstream flow paths 52 branched from the second upstream flow path 48B are respectively connected to the three discharge ports 34 (inner discharge port, middle discharge port, and outer discharge port) provided in the same nozzle head 33. There is. The third upstream flow passage 48C and the fourth upstream flow passage 48D are the same as the second upstream flow passage 48B. The first upstream flow passage 48A is connected to a first discharge port 34A provided in the first nozzle 26A.

  The processing liquid supply system includes a plurality of downstream heaters 53 that heat the liquid flowing in the plurality of upstream flow channels 48 other than the first upstream flow channel 48A at a downstream temperature higher than the upstream temperature. The processing liquid supply system further includes a plurality of return flow paths 54 connected to the plurality of upstream flow paths 48 other than the first upstream flow path 48A at a position downstream of the plurality of downstream heaters 53, and a plurality of return flows. And a plurality of return valves 55 which open and close the passage 54, respectively. The downstream switching unit includes a plurality of discharge valves 51 and a plurality of return valves 55.

  The processing liquid supply system includes a cooler 56 for cooling the chemical solution supplied from the plurality of return flow paths 54 and a tank recovery flow path 57 for guiding the chemical solution from the cooler 56 to the chemical solution tank 41. The chemical solution supplied from the plurality of return flow paths 54 to the cooler 56 is brought close to the upstream temperature by the cooler 56 and then guided to the chemical liquid tank 41 via the tank recovery flow path 57. The cooler 56 may be a water cooling unit or an air cooling unit, or may be another cooling unit.

Next, with reference to FIG. 1, the processing liquid supply system in the discharge state in which the plurality of discharge ports 34 discharge the chemical solution will be described. In FIG. 1, the open valve is shown in black and the closed valve is shown in white.
The drug solution in the drug solution tank 41 is sent to the drug solution flow path 42 by the pump 44. The chemical solution sent by the pump 44 is heated by the upstream heater 43, and then flows from the chemical solution channel 42 to the supply channel 47 and flows from the supply channel 47 to the plurality of upstream channels 48. The chemical solutions supplied to the plurality of upstream flow channels 48 (branch upstream flow channels) other than the first upstream flow channel 48 A are heated by the downstream heater 53 and then flow to the plurality of downstream flow channels 52.

  The chemical solution in the first upstream flow passage 48A is supplied to one first discharge port 34A provided in the first nozzle 26A. The chemical solution in the second upstream flow passage 48B is supplied to the plurality of second discharge ports 34B provided in the second nozzle 26B via the plurality of downstream flow passages 52. The third upstream flow passage 48C and the fourth upstream flow passage 48D are the same as the second upstream flow passage 48B. Thereby, the chemical solution is discharged from all the discharge ports 34.

  The heating temperature (downstream temperature) of the processing liquid by the downstream heater 53 is higher than the heating temperature (upstream temperature) of the processing liquid by the upstream heater 43. The second to fourth downstream temperatures increase in the order of the second to fourth downstream temperatures. The first discharge port 34A discharges the chemical solution at the upstream temperature. Each second discharge port 34B discharges the chemical solution at the second downstream temperature. Each third discharge port 34C discharges a chemical solution at a third downstream temperature, and each fourth discharge port 34D discharges a chemical solution at a fourth downstream temperature. Therefore, the temperature of the chemical solution discharged from the plurality of discharge ports 34 gradually increases as it is separated from the rotation axis A1.

Next, with reference to FIG. 2, the treatment liquid supply system in the discharge stop state in which the discharge of the chemical solution from the plurality of discharge ports 34 is stopped will be described. In FIG. 2, the open valve is shown in black and the closed valve is shown in white.
The drug solution in the drug solution tank 41 is sent to the drug solution flow path 42 by the pump 44. A part of the chemical solution sent by the pump 44 is heated by the upstream heater 43 and then returns to the chemical solution tank 41 via the circulation flow path 40. The remaining chemical solution sent by the pump 44 flows from the chemical solution channel 42 to the supply channel 47 and flows from the supply channel 47 to the plurality of upstream channels 48 other than the first upstream channel 48A.

  The chemical solution in the second upstream flow passage 48B is heated by the downstream heater 53 corresponding to the second upstream flow passage 48B, and then flows to the cooler 56 through the return flow passage 54. The third upstream flow passage 48C and the fourth upstream flow passage 48D are the same as the second upstream flow passage 48B. The chemical solution supplied to the cooler 56 is cooled by the cooler 56, and then returns to the chemical solution tank 41 via the tank recovery passage 57. Thereby, all the chemical solutions sent to the chemical solution channel 42 by the pump 44 return to the chemical solution tank 41.

The temperature of the processing liquid may greatly affect the processing of the substrate W. If the downstream heater 53 is stopped while the discharge is stopped, it takes time for the temperature of the processing liquid heated by the downstream heater 53 to stabilize at the intended temperature when the operation of the downstream heater 53 is resumed. Therefore, the discharge of the treatment liquid can not be resumed immediately, and the throughput is reduced.
As described above, even while discharge is stopped, the chemical solution is continuously supplied to the downstream heater 53, and the downstream heater 53 heats the chemical solution. Thus, the temperature of the downstream heater 53 can be maintained stable. Furthermore, since the chemical solution heated by the downstream heater 53 is returned to the chemical solution tank 41, the consumption amount of the chemical solution can be reduced. In addition, since the chemical solution cooled by the cooler 56 is returned to the chemical solution tank 41, the fluctuation of the temperature of the chemical solution in the chemical solution tank 41 can be suppressed.

FIG. 7 is a process diagram for explaining an example of the processing of the substrate W performed by the substrate processing apparatus 1. The following operations are executed by the control device 3 controlling the substrate processing apparatus 1. Reference is made below to FIGS. 3 and 4. Reference will be made to FIG. 7 as appropriate.
When the substrate W is processed by the processing unit 2, the plurality of nozzles 26 are retracted from above the spin chuck 11, and the hand of the transfer robot (not shown) with the splash guard 17 positioned at the lower position. , The substrate W is carried into the chamber 7. Thereby, the substrate W is placed on the plurality of chuck pins 13 with the surface directed upward. Thereafter, the hand of the transfer robot is retracted from the inside of the chamber 7, and the loading / unloading port 8 a of the chamber 7 is closed by the shutter 9.

  After the substrate W is placed on the plurality of chuck pins 13, the plurality of chuck pins 13 are pressed against the peripheral portion of the substrate W, and the substrate W is gripped by the plurality of chuck pins 13. Also, the guard lifting and lowering unit 18 moves the splash guard 17 from the lower position to the upper position. Thus, the upper end of the splash guard 17 is disposed above the substrate W. Thereafter, the spin motor 14 is driven to start the rotation of the substrate W. Thereby, the substrate W is rotated at a predetermined liquid processing speed (for example, several hundred rpm).

  Next, the nozzle moving unit 24 moves the plurality of nozzles 26 from the standby position to the processing position. Thereby, the plurality of discharge ports 34 overlap the substrate W in plan view. Thereafter, the plurality of discharge valves 51 and the like are controlled, and the chemical solution is simultaneously discharged from the plurality of nozzles 26 (step S1 in FIG. 7). The plurality of nozzles 26 discharge the chemical solution in a state where the nozzle moving unit 24 swings the plurality of nozzles 26 around the rotation axis A1 (for the swing, see the two-dot chain line in FIG. 6). When a predetermined time elapses after the plurality of discharge valves 51 are opened, the discharge of the chemical solution from the plurality of nozzles 26 is simultaneously stopped (Step S2 in FIG. 7). Thereafter, the nozzle moving unit 24 moves the plurality of nozzles 26 from the processing position to the standby position.

  The liquid chemical discharged from the plurality of nozzles 26 lands on the upper surface of the rotating substrate W, and then flows outward (in a direction away from the rotation axis A1) along the upper surface of the substrate W by centrifugal force. The chemical solution that has reached the upper surface peripheral portion of the substrate W is scattered around the substrate W and received on the inner peripheral surface of the splash guard 17. Thus, the chemical solution is supplied to the entire upper surface of the substrate W, and a liquid film of the chemical solution covering the entire upper surface of the substrate W is formed on the substrate W. Thereby, the entire upper surface of the substrate W is treated with the chemical solution.

  After the discharge of the chemical solution from the plurality of nozzles 26 is stopped, the rinse liquid valve 23 is opened, and the discharge of the rinse liquid (pure water) from the rinse liquid nozzle 21 is started (Step S3 in FIG. 7). Thereby, the chemical solution on the substrate W is washed away by the rinse liquid, and a liquid film of the rinse liquid covering the entire upper surface of the substrate W is formed. When a predetermined time passes after the rinse liquid valve 23 is opened, the rinse liquid valve 23 is closed, and the discharge of the rinse liquid from the rinse liquid nozzle 21 is stopped (Step S4 in FIG. 7).

  After the discharge of the rinse liquid from the rinse liquid nozzle 21 is stopped, the substrate W is accelerated in the rotational direction by the spin motor 14, and the substrate W rotates at a drying speed (for example, several thousand rpm) larger than the liquid processing speed. (Step S5 in FIG. 7). Thereby, the rinse liquid adhering to the substrate W is shaken off around the substrate W, and the substrate W is dried. The rotation of the spin motor 14 and the substrate W is stopped when a predetermined time passes after the substrate W starts high-speed rotation.

  After the rotation of the substrate W is stopped, the guard lifting and lowering unit 18 moves the splash guard 17 from the upper position to the lower position. Further, the holding of the substrate W by the plurality of chuck pins 13 is released. The transport robot causes the hand to enter the inside of the chamber 7 with the plurality of nozzles 26 retracted from above the spin chuck 11 and the splash guard 17 positioned at the lower position. Thereafter, the transfer robot picks up the substrate W on the spin chuck 11 with a hand, and unloads the substrate W from the chamber 7.

FIG. 8 is a graph showing the distribution of the etching amount of the substrate W.
The processing conditions of the substrate W in the measurement value A to the measurement value C shown in FIG. 8 are the same except for the nozzle that discharges the chemical solution.
The measurement value A indicates the distribution of the etching amount when the substrate W is etched by discharging the chemical solution to the plurality of ejection ports 34 (ten ejection ports 34) while keeping the plurality of nozzles 26 stationary.

  In the measurement value B, the substrate W is etched by discharging the chemical solution to the plurality of discharge ports 34 (four discharge ports 34) while keeping the plurality of nozzles 26 from which all the nozzle heads 33 are removed stationary. The distribution of the etching amount is shown. That is, the measurement value B indicates the distribution of the etching amount when the chemical solution is discharged to the four discharge ports 34 (corresponding to the first discharge ports 34A) provided in the four nozzle bodies 27 respectively. .

The measurement value C indicates the distribution of the etching amount when the chemical solution is discharged to only one discharge port 34 and the liquid deposition position of the chemical solution is fixed at the central portion of the upper surface of the substrate W.
In the measured value C, the amount of etching decreases with distance from the central portion of the substrate W, and the distribution of the amount of etching shows a mountain-shaped curve. That is, the etching amount is largest at the liquid deposition position of the chemical solution, and decreases as it is separated from the liquid deposition position. On the other hand, in the measurement value A and the measurement value B, the etching amount at positions other than the central portion of the substrate W is increased compared to the measurement value C, and the etching uniformity is significantly improved. There is.

  In the measurement value B, seven peaks are formed. The top of the middle mountain is the position corresponding to the innermost landing position, and the top two mountain peaks on the outside are the positions corresponding to the second landing position from the inside. Further, the two outer mountain positions are positions corresponding to the third liquid landing position from the inner side, and the outermost two mountain positions are positions corresponding to the fourth inner liquid landing position.

  In the measurement value A, similar to the measurement value B, a plurality of peaks corresponding to a plurality of liquid deposition positions are formed. In the measurement value B, the number of the discharge ports 34 is four, whereas in the measurement value A, the number of the discharge ports 34 is ten, so the number of peaks increases. Furthermore, as compared with the measured value B, the line indicating the distribution of the etching amount approaches a straight line extending in the left-right direction (a straight line in which the etching amount is constant), and the etching uniformity is improved.

  As described above, the nozzle moving unit 24 swings the plurality of nozzles 26 around the nozzle rotation axis A2 within a range where the chemical solution discharged from the plurality of discharge ports 34 lands on the upper surface of the substrate W. At this time, each discharge port 34 reciprocates horizontally once or more along an arc-shaped path having a center on the nozzle rotation axis A2. Therefore, the distance from the rotation axis A1 to each discharge port 34 changes.

  The measurement value A and the measurement value B indicate the distribution of the etching amount when the substrate W is etched while the plurality of nozzles 26 are kept stationary. When the nozzle moving unit 24 swings the plurality of nozzles 26, the liquid deposition position moves in the radial direction Dr, so a line indicating the distribution of the etching amount is a straight line extending in the left-right direction (the etching amount is a straight line). Get closer. Thereby, the uniformity of etching can be further enhanced.

As described above, in the present embodiment, the supply flow channel 47 guiding the treatment liquid is branched into the plurality of upstream flow channels 48. Thereby, the number of discharge ports 34 can be increased. Furthermore, since the branched upstream flow paths branched into the plurality of downstream flow paths 52 are included in the plurality of upstream flow paths 48, the number of the discharge ports 34 can be further increased.
The processing liquid flowing in the supply flow channel 47 is supplied from the upstream flow channel 48 or the downstream flow channel 52 to the discharge port 34, and is discharged toward the upper surface of the substrate W rotating around the rotation axis A1. The plurality of discharge ports 34 are respectively disposed at a plurality of positions different in distance from the rotation axis A1. Therefore, the uniformity of the temperature of the processing liquid on the substrate W can be improved as compared with the case where the processing liquid is discharged to only one discharge port 34. Thus, the processing uniformity can be improved while reducing the consumption of the processing liquid.

  Further, in the present embodiment, the nozzle movement unit 24 swings the plurality of ejection ports 34 in a state where the substrate W is rotating and the plurality of ejection ports 34 are ejecting the chemical solution. Thus, the distance from the rotation axis A1 to each discharge port 34 changes. The chemical solution discharged from the plurality of discharge ports 34 lands on a plurality of landing positions in the upper surface of the substrate W. The amount of etching of the substrate W is the largest at the landing position, and decreases with distance from the landing position. Since the plurality of discharge ports 34 move horizontally, the plurality of liquid deposition positions also move in the upper surface of the substrate W accordingly. Thereby, the uniformity of the process can be improved as compared with the case where the plurality of discharge ports 34 are not moved.

  Further, in the present embodiment, the upstream ends of the plurality of downstream flow paths 52 are disposed in the chamber 7. The branch upstream channel branches into a plurality of downstream channels 52 in the chamber 7. Therefore, as compared with the case where the branch upstream flow channel is branched outside the chamber 7, the length (the length in the direction in which the liquid flows) of each downstream flow channel 52 can be shortened. Thereby, the temperature fall of the process liquid by the heat transfer to the downstream flow path 52 from a process liquid can be suppressed.

  Further, in the present embodiment, the upstream ends of the plurality of upstream channels 48 are disposed in the fluid box 5. The supply flow channel 47 branches into a plurality of upstream flow channels 48 in the fluid box 5. Therefore, the length (the length in the direction in which the liquid flows) of each upstream flow passage 48 as compared with the case where the supply flow passage 47 is branched into the plurality of upstream flow passages 48 at a position upstream of the fluid box 5 Can be shortened. Thereby, the temperature fall of the process liquid by the heat transfer to the upstream flow path 48 from a process liquid can be suppressed.

  Further, in the present embodiment, the processing liquid heated to a downstream temperature higher than the upstream temperature by the downstream heater 53 is discharged from the upstream flow passage 48 other than the innermost upstream flow passage (first upstream flow passage 48A). It is supplied to the discharge ports 34 other than the (first discharge port 34A) and discharged from the discharge ports 34. That is, while the processing liquid at the upstream temperature is discharged from the innermost discharge port, the processing liquid having a temperature higher than the upstream temperature is discharged from the discharge port 34 located outside the innermost discharge port.

As described above, since the temperature of the processing liquid supplied to the upper surface of the substrate W gradually increases as it is separated from the rotation axis A1, compared with the case where the processing liquid having the same temperature is discharged to each discharge port 34, Temperature uniformity can be enhanced. Thus, the processing uniformity can be improved while reducing the consumption of the processing liquid.
Further, in the present embodiment, the first discharge port 34A and the second discharge port 34B are aligned in the radial direction Dr in plan view. If the plurality of nozzles 26 of the same length are arranged in the horizontal direction orthogonal to the longitudinal direction D1 so that the plurality of discharge ports 34 are arranged in the radial direction Dr in plan view, the entire width of the plurality of nozzles 26 increases (see FIG. 9). If the plurality of nozzles 26 having different lengths are arranged in the vertical direction so that the plurality of discharge ports 34 are arranged in the radial direction Dr in plan view, the height of the plurality of nozzles 26 as a whole is increased (see FIG. 10).

  On the other hand, in the present embodiment, the plurality of arm portions 28 are arranged in the horizontal arrangement direction D2 orthogonal to the longitudinal direction D1. Furthermore, the tips 28a of the plurality of arms 28 are shifted in the longitudinal direction D1 such that the tips 28a of the plurality of arms 28 are arranged in the order of the first nozzle 26A to the fourth nozzle 26D from the rotation axis A1 side with respect to the longitudinal direction D1. (See Figure 4). Thereby, the plurality of discharge ports 34 can be arranged in the radial direction Dr in plan view while suppressing both the width and height of the plurality of nozzles 26 as a whole.

Although the description of the embodiment of the present invention has been described above, the present invention is not limited to the contents of the above-described embodiment, and various modifications are possible within the scope of the present invention.
For example, although the case where the number of nozzles 26 is four has been described in the embodiment, the number of nozzles 26 may be two or three, or five or more.
In the embodiment described above, the case where the chemical solution flowing through the return flow path 54 toward the chemical solution tank 41 is cooled by the cooler 56 may be omitted.

  In the embodiment described above, the downstream heater 53 is not provided in the first upstream flow passage 48A, and the downstream heater 53 is provided in all the upstream flow passages 48 other than the first upstream flow passage 48A. The downstream heater 53 may be provided in all the upstream channels 48 including the first upstream channel 48A. The same applies to the return channel 54. On the contrary, the downstream heater 53 may not be provided in all the upstream flow paths 48.

  Although the nozzle head 33 is not provided in the first nozzle 26A and the nozzle head 33 is attached to all the nozzles 26 other than the first nozzle 26A in the embodiment, the first nozzle 26A The nozzle head 33 may be provided for all the nozzles 26 including the nozzle. On the contrary, all the nozzles 26 may not be provided with the nozzle head 33.

Although the said embodiment demonstrated the case where the three downstream flow paths 52 and the three discharge ports 34 were formed in the one nozzle head 33, the downstream flow path 52 formed in the one nozzle head 33 is demonstrated. The number of the discharge ports 34 may be two, or four or more.
Although the said embodiment demonstrated the case where the branch upstream flow path (upstream flow path 48 other than 1st upstream flow path 48A) branched to several downstream flow path 52 within the chamber 7, a branch upstream flow path May be branched outside the chamber 7.

In the embodiment, although the case where the plurality of discharge ports 34 are arranged in the radial direction Dr in plan view has been described, the plurality of discharge ports 34 are respectively disposed at a plurality of positions having different distances from the rotation axis A1. As long as the plurality of discharge ports 34 do not have to be aligned in the radial direction Dr in plan view.
In the above embodiment, the case where all the discharge valves 51 are opened simultaneously and all the discharge valves 51 are closed simultaneously has been described, but the control device 3 calculates the time during which the outer discharge port 34 discharges the treatment liquid. The plurality of discharge valves 51 may be controlled so as to be longer than the time during which the inner discharge port 34 is discharging the treatment liquid.

In the above embodiment, the case where the chemical liquid flow path 42 for supplying the chemical liquid is provided to the supply flow path 47 has been described, but even if a plurality of processing liquid flow paths for supplying the liquid to the supply flow path 47 are provided. Good.
For example, the first liquid may be supplied from the first liquid flow path to the supply flow path 47, and the second liquid may be supplied from the second liquid flow path to the supply flow path 47. In this case, since the first liquid and the second liquid are mixed in the supply flow channel 47, the mixed liquid containing the first liquid and the second liquid is supplied from the supply flow channel 47 to the plurality of upstream flow channels 48. The first liquid and the second liquid may be the same type of liquid or may be different types of liquid. A specific example of the first liquid and the second liquid is a combination of sulfuric acid and hydrogen peroxide water, and a combination of TMAH and pure water.

The control device 3 may make the thickness of the processed thin film uniform by controlling the temperature of the processing liquid supplied to each part of the surface of the substrate W in accordance with the thickness of the thin film before the processing.
FIG. 11 is a graph showing an image of the thickness of the thin film and the temperature of the processing liquid supplied to the substrate W before and after processing. The dashed-dotted line of FIG. 11 shows the film thickness before processing, and the dashed-two dotted line of FIG. 11 shows the film thickness after processing. The solid line in FIG. 11 indicates the temperature of the processing liquid supplied to the substrate W. The horizontal axis of FIG. 11 indicates the radius of the substrate W. The film thickness before processing may be input to the substrate processing apparatus 1 from an apparatus (for example, a host computer) other than the substrate processing apparatus 1 or may be measured by a measuring device provided in the substrate processing apparatus 1.

In the case of the example shown in FIG. 11, the control device 3 may control the substrate processing apparatus 1 so that the temperature of the processing liquid changes in the same manner as the film thickness before processing. Specifically, the control device 3 may control the plurality of downstream heaters 53 such that the temperature of the processing liquid in the plurality of upstream flow channels 48 becomes a temperature corresponding to the film thickness before the processing.
In this case, a relatively high temperature treatment liquid is supplied to a position where the film thickness before treatment is relatively large, and a relatively low temperature treatment liquid is supplied to a position where the film thickness before treatment is relatively small. The etching amount of the thin film formed on the surface of the substrate W relatively increases at the position where the high temperature processing liquid is supplied, and decreases relatively at the position where the low temperature processing liquid is supplied. Therefore, the thickness of the thin film after processing is equalized.

  Two or more of all the aforementioned configurations may be combined. Two or more of all the aforementioned steps may be combined.

1: Substrate processing apparatus 3: Controller 5: Fluid box 7: Chamber 11: Spin chuck (substrate holding unit)
24: Nozzle moving unit 25: Holders 26A to 26D: first to fourth nozzles 27: nozzle main body 28: arm portion 28a: tip 29: tip portion 33: nozzle head 34A: first discharge port (innermost discharge port, main Discharge port)
34B: Second discharge port (sub discharge port)
34C: 3rd discharge port (sub discharge port)
34D: 4th discharge port (sub discharge port)
41: chemical solution tank 42: chemical solution flow channel 43: upstream heater 45: supply valve 47: supply flow channel 48A: first upstream flow channel (innermost upstream flow channel, main upstream flow channel)
48B: Second upstream channel (branch upstream channel, secondary upstream channel)
48C: Third upstream channel (branch upstream channel, secondary upstream channel)
48D: Fourth upstream channel (branch upstream channel, secondary upstream channel)
51: Discharge valve (downstream switching unit)
52: downstream flow channel 53: downstream heater 54: return flow channel 55: return valve (downstream switching unit)
A1: Rotational axis D1: Longitudinal direction D2: Alignment direction Dr: Radial direction W: Substrate

Claims (6)

A substrate holding unit that rotates the substrate about a vertical rotation axis passing through the center of the substrate while holding the substrate horizontally;
A supply channel, a plurality of upstream channels, a plurality of discharge ports, a plurality of nozzles provided with the plurality of discharge ports, a holder for holding the plurality of nozzles, and the holder around a nozzle rotation axis A nozzle movement unit for moving the plurality of nozzles such that the plurality of discharge ports move along an arc-shaped path having a center on the nozzle rotation axis by rotating the A processing liquid supply system for supplying a processing liquid to the substrate held by the substrate holding unit ;
A controller for controlling the processing liquid supply system ;
The supply channel guides the processing solution toward the plurality of upstream channels,
The plurality of upstream flow channels branch from the supply flow channel, and guide the processing liquid supplied from the supply flow channel toward the plurality of discharge ports.
The plurality of discharge ports are separated from the main discharge port for discharging the processing liquid toward the central portion of the upper surface of the substrate, and from the central portion of the upper surface, and the distances from the rotation axis are different. And a plurality of sub-discharge ports for discharging the processing liquid respectively to a plurality of positions, wherein the distance from the rotation axis is respectively arranged at a plurality of different positions, and the supply is performed via the plurality of upstream flow paths Discharging the processed liquid toward the upper surface of the substrate held by the substrate holding unit;
The plurality of upstream channels include a main upstream channel connected to the main outlet, and a plurality of sub upstream channels connected to the plurality of secondary outlets.
In the control device, the processing discharged from the plurality of discharge ports in a state in which the substrate holding unit rotates the substrate, and the plurality of discharge ports discharge the processing liquid toward the upper surface of the substrate. The plurality of discharge ports are leveled once or more along the arc-shaped path while the distance from the rotation axis to the plurality of discharge ports is changed within a range in which the liquid is deposited on the upper surface of the substrate. The substrate processing apparatus , wherein the plurality of nozzles are moved to the nozzle movement unit so as to reciprocate . The processing liquid supply system further includes a plurality of downstream flow paths,
The plurality of sub upstream channels are branch upstream channels branched to the plurality of downstream channels, and the sub discharge port is provided for each of the downstream channels. Substrate processing equipment. The substrate processing apparatus further includes a chamber for housing a substrate held by the substrate holding unit,
The substrate processing apparatus according to claim 2, wherein the branch upstream flow channel branches into the plurality of downstream flow channels in the chamber. The processing liquid supply system further includes an upstream heater and a plurality of downstream heaters,
The upstream heater heats the processing liquid supplied to the supply channel at an upstream temperature,
The plurality of downstream heaters are respectively connected to the plurality of sub-upstream channels at positions upstream of the plurality of sub-discharge ports, and the processing liquid flowing in the plurality of sub-upstream channels is greater than the upstream temperature. The substrate processing apparatus according to any one of claims 1 to 3, wherein heating is performed at a high temperature downstream temperature. The processing liquid supply system further includes a plurality of return flow paths, a plurality of downstream heaters, and a downstream switching unit,
The plurality of return channels are respectively connected to the plurality of sub upstream channels at positions upstream of the plurality of sub discharge ports,
The plurality of downstream heaters are respectively connected to the plurality of sub upstream channels at positions upstream of the connection position between the return channel and the sub upstream channel, and flow through the plurality of sub upstream channels. Heat the processing solution,
The downstream switching unit is configured to supply a processing liquid supplied from the supply flow channel to the plurality of upstream flow channels to the plurality of discharge ports, and to supply the plurality of upstream flow channels from the supply flow channel. The substrate processing apparatus according to any one of claims 1 to 4, wherein the processing solution is switched to any one of a plurality of states including an ejection stop state where the processing liquid is supplied to the plurality of return flow paths. It said plurality of nozzles comprises a first nozzle, a second nozzle, a,
The plurality of discharge ports include a first discharge port provided in the first nozzle, and a second discharge port provided in the second nozzle, and viewed in plan in a radial direction orthogonal to the rotation axis. Lined up,
The first nozzle includes a horizontally extending first arm portion and a first tip portion extending downward from a tip of the first arm portion,
The second nozzle has a second arm portion extending in the longitudinal direction, the second distal end portion extending downward from the front end of the second arm portion, the including, according to any one of claims 1 to 5 Substrate processing equipment.

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