TWI665023B - Substrate processing apparatus and substrate processing method - Google Patents
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- TWI665023B TWI665023B TW107106635A TW107106635A TWI665023B TW I665023 B TWI665023 B TW I665023B TW 107106635 A TW107106635 A TW 107106635A TW 107106635 A TW107106635 A TW 107106635A TW I665023 B TWI665023 B TW I665023B
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- 238000012545 processing Methods 0.000 title claims abstract description 392
- 239000000758 substrate Substances 0.000 title claims abstract description 361
- 238000003672 processing method Methods 0.000 title claims description 21
- 239000007788 liquid Substances 0.000 claims abstract description 460
- 238000010438 heat treatment Methods 0.000 claims abstract description 84
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 60
- 230000007246 mechanism Effects 0.000 claims description 35
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 30
- 238000005530 etching Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 13
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 12
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 12
- 230000001105 regulatory effect Effects 0.000 claims description 11
- 230000001276 controlling effect Effects 0.000 claims description 3
- 239000000126 substance Substances 0.000 description 312
- 239000000243 solution Substances 0.000 description 247
- 238000001514 detection method Methods 0.000 description 24
- 230000000694 effects Effects 0.000 description 19
- 239000003814 drug Substances 0.000 description 14
- 238000010586 diagram Methods 0.000 description 13
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 13
- 230000007423 decrease Effects 0.000 description 12
- 238000011010 flushing procedure Methods 0.000 description 12
- 239000012530 fluid Substances 0.000 description 9
- 230000002093 peripheral effect Effects 0.000 description 9
- 238000013459 approach Methods 0.000 description 8
- 230000008569 process Effects 0.000 description 8
- 230000002123 temporal effect Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 238000005406 washing Methods 0.000 description 5
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000011144 upstream manufacturing Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 238000004891 communication Methods 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000010792 warming Methods 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 239000003755 preservative agent Substances 0.000 description 1
- 230000002335 preservative effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
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-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02052—Wet cleaning only
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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- H01L21/67017—Apparatus for fluid treatment
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67023—Apparatus for fluid treatment for general liquid treatment, e.g. etching followed by cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- H01L21/67098—Apparatus for thermal treatment
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
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- Weting (AREA)
Abstract
本發明提供一種基板處理裝置的控制裝置,其包括資訊獲取部、加熱執行部、記憶裝置、開度決定部、開度設定部以及處理液供給部。The invention provides a control device for a substrate processing apparatus, which includes an information acquisition section, a heating execution section, a memory device, an opening degree determination section, an opening degree setting section, and a processing liquid supply section.
Description
本發明是有關於一種對基板進行處理的基板處理裝置及基板處理方法。在作為處理對象的基板中,例如,包含半導體晶圓、液晶顯示裝置用基板、電漿顯示器用基板、場發射顯示器(Field Emission Display,FED)用基板、光碟用基板、磁碟用基板、磁光碟用基板、光罩用基板、陶瓷基板、太陽能電池用基板等。The present invention relates to a substrate processing apparatus and a substrate processing method for processing a substrate. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for a plasma display, a substrate for a field emission display (FED), a substrate for an optical disk, a substrate for a magnetic disk, and a magnetic substrate. Optical disc substrates, photomask substrates, ceramic substrates, solar cell substrates, and the like.
在半導體裝置或液晶顯示裝置等的製造步驟中,會使用對半導體晶圓或液晶顯示裝置用玻璃基板等基板進行處理的基板處理裝置。In the manufacturing steps of a semiconductor device or a liquid crystal display device, a substrate processing device that processes a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device is used.
日本專利特開2016-152354號公報中,揭示了一種對基板一片片地進行處理的單片式基板處理裝置。所述基板處理裝置包括一面水平地保持基板一面使基板圍繞著通過基板的中央部的鉛垂的旋轉軸線旋轉的自旋夾頭(spin chuck)、朝向由自旋夾頭保持著的基板噴出處理液的噴嘴、對要供給至噴嘴的處理液進行加熱的多個加熱器。多個加熱器包括對進行循環的處理液進行加熱的上游加熱器、與在由上游加熱器進行了加熱的處理液從噴嘴噴出之前對所述處理液進行加熱的下游加熱器。Japanese Patent Laid-Open No. 2016-152354 discloses a single-chip substrate processing apparatus that processes substrates one by one. The substrate processing apparatus includes a spin chuck that holds the substrate horizontally while rotating the substrate around a vertical axis of rotation passing through a central portion of the substrate, and ejects the substrate toward the substrate held by the spin chuck. Liquid nozzle, and a plurality of heaters for heating the processing liquid to be supplied to the nozzle. The plurality of heaters include an upstream heater that heats the circulating processing liquid, and a downstream heater that heats the processing liquid before the processing liquid heated by the upstream heater is ejected from the nozzle.
供給至基板的處理液通過由包括配管以及噴嘴的多個構件而形成的流路而從噴嘴噴出。從噴嘴噴出的處理液通過噴嘴與基板之間的空間而與基板碰撞。The processing liquid supplied to the substrate is ejected from the nozzle through a flow path formed by a plurality of members including a pipe and a nozzle. The processing liquid ejected from the nozzle collides with the substrate through the space between the nozzle and the substrate.
在供給至基板的處理液由加熱器預先加熱的情況下,處理液的一部分熱放出至流路或空氣中。這種熱損失必然會發生,因此,稍低於加熱器的溫度的處理液被供給至基板。When the processing liquid supplied to the substrate is heated in advance by a heater, a part of the processing liquid is thermally released into the flow path or the air. Since such a heat loss inevitably occurs, a processing liquid slightly lower than the temperature of the heater is supplied to the substrate.
在處理液的剛開始時與之後,處理液的熱損失量不同。因此,即使預想到熱損失而設定加熱器的溫度,從噴嘴噴出時的處理液的溫度也隨時間的經過而發生變化。為了抑制這種溫度的變化,考慮在途中變更加熱器的溫度設定,但加熱器以及處理液的溫度未必會立刻變化。The amount of heat loss of the processing liquid is different at the beginning and after of the processing liquid. Therefore, even if the temperature of the heater is set in anticipation of the heat loss, the temperature of the processing liquid when ejected from the nozzle changes over time. In order to suppress such a temperature change, it is considered that the temperature setting of the heater is changed on the way, but the temperatures of the heater and the processing liquid do not necessarily change immediately.
因此本發明的一個目的是提供一種能夠以更高的精度對從噴嘴噴出時的處理液的溫度進行控制的基板處理裝置以及基板處理方法。It is therefore an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of controlling the temperature of a processing liquid when ejected from a nozzle with higher accuracy.
本發明的實施形態提供一種基板處理裝置,其具備:至少一個加熱器,對處理液進行加熱;第1配管,對由所述至少一個加熱器進行了加熱的處理液進行引導;第1流量調整閥,對供給至所述第1配管的處理液的流量進行變更;第1噴嘴,將由所述第1配管引導的處理液朝向基板噴出;以及控制裝置,對所述至少一個加熱器與所述第1流量調整閥進行控制。An embodiment of the present invention provides a substrate processing apparatus including at least one heater to heat a processing liquid, a first pipe to guide the processing liquid heated by the at least one heater, and a first flow rate adjustment. A valve that changes a flow rate of the processing liquid supplied to the first pipe; a first nozzle that sprays the processing liquid guided by the first pipe toward a substrate; and a control device that controls the at least one heater and the The first flow regulating valve is controlled.
所述控制裝置包括:資訊獲取部,獲取表示由所述至少一個加熱器進行了加熱的處理液的溫度的目標值的加熱溫度、與從所述第1噴嘴噴出時的處理液的溫度的目標值,即比所述加熱溫度低的第1設定溫度;加熱執行部,使所述至少一個加熱器以所述加熱溫度對處理液進行加熱;記憶裝置,記憶第1開度決定資料,所述第1開度決定資料是對與在以所述加熱溫度被供給至所述第1配管的處理液以第1噴出溫度從所述第1噴嘴被噴出時被供給至所述第1配管的處理液的流量相對應的所述第1流量調整閥的開度進行規定的資料;第1開度決定部,基於所述記憶裝置中所記憶的所述第1開度決定資料、與所述資訊獲取部所獲取的所述加熱溫度以及第1設定溫度,決定與第1目標流量相對應的第1目標開度,所述第1目標流量使所述第1噴出溫度與所述第1設定溫度一致或接近;第1開度設定部,將所述第1流量調整閥的開度設定為所述第1目標開度;以及第1處理液供給部,經由所述第1配管將處理液供給至所述第1噴嘴。The control device includes an information acquisition unit that acquires a heating temperature indicating a target value of a temperature of the processing liquid heated by the at least one heater and a target of the temperature of the processing liquid when ejected from the first nozzle. Value, that is, the first set temperature lower than the heating temperature; the heating execution unit causes the at least one heater to heat the processing liquid at the heating temperature; a memory device that memorizes the first opening degree determination data, and The first opening degree determination data is processing for supplying the first pipe when the processing liquid supplied to the first pipe at the heating temperature is discharged from the first nozzle at the first discharge temperature. Predetermined data corresponding to the opening degree of the first flow rate adjustment valve corresponding to the flow rate of the liquid; the first opening degree determining unit is based on the first opening degree determination data and the information stored in the memory device; The heating temperature and the first set temperature acquired by the acquisition unit determine a first target opening degree corresponding to a first target flow rate, and the first target flow rate causes the first ejection temperature and the first set temperature to be determined. Consistent or close A first opening setting unit that sets the opening of the first flow rate adjustment valve to the first target opening; and a first processing liquid supply unit that supplies the processing liquid to the first through the first pipe nozzle.
根據所述構成,被加熱器以加熱溫度加熱了的處理液經由第1配管而被供給至第1噴嘴。表示從第1噴嘴噴出時的處理液的溫度的第1噴出溫度不僅相應於供給至第1配管的處理液的溫度而發生變化,也相應於供給至第1配管的處理液的流量而發生變化。即,當處理液的供給流量減少時,第1噴出溫度下降,當處理液的供給流量增加時,第1噴出溫度上升。這是因為:熱損失量與處理液的供給流量無關而大致固定,與此相對,處理液的熱容量相應於處理液的供給流量而發生變化。According to the above configuration, the processing liquid heated by the heater at the heating temperature is supplied to the first nozzle through the first pipe. The first discharge temperature, which indicates the temperature of the processing liquid when discharged from the first nozzle, changes not only in accordance with the temperature of the processing liquid supplied to the first pipe, but also in accordance with the flow rate of the processing liquid supplied to the first pipe. . That is, when the supply flow rate of the processing liquid decreases, the first discharge temperature decreases, and when the supply flow rate of the processing liquid increases, the first discharge temperature increases. This is because the amount of heat loss is approximately constant regardless of the supply flow rate of the processing liquid, while the heat capacity of the processing liquid changes in accordance with the supply flow rate of the processing liquid.
即使加熱溫度相同,如果處理液的供給流量不同,則噴出溫度也不同。對這些關係進行規定的第1開度決定資料記憶於控制裝置的記憶裝置中。關於處理液的供給流量,是以第1噴出溫度與第1設定溫度一致或接近的方式基於第1開度決定資料而設定。即,對處理液的供給流量進行規定的第1流量調整閥的開度被設定為與使第1噴出溫度與第1設定溫度一致或接近的第1目標流量相對應的第1目標開度。在此狀態下,具有加熱溫度的處理液被供給至第1配管。由此,具有第1設定溫度或與所述第1設定溫度幾乎相同的溫度的處理液從第1噴嘴噴出。Even if the heating temperature is the same, if the supply flow rate of the processing liquid is different, the discharge temperature is also different. The first opening degree determination data defining these relationships is stored in a memory device of the control device. The supply flow rate of the processing liquid is set based on the first opening degree determination data so that the first discharge temperature matches or approaches the first set temperature. That is, the opening degree of the first flow rate adjustment valve that defines the supply flow rate of the processing liquid is set to the first target opening degree corresponding to the first target flow rate at which the first discharge temperature matches or approaches the first set temperature. In this state, a processing liquid having a heating temperature is supplied to the first pipe. Thereby, the processing liquid having the first set temperature or a temperature almost the same as the first set temperature is ejected from the first nozzle.
如此,不僅恰當地對加熱器的溫度進行管理,而且相應於加熱溫度以及第1設定溫度而恰當地對供給至第1配管以及第1噴嘴的處理液的流量,即,處理液的熱容量進行設定,因此,能夠以更高的精度對從第1噴嘴噴出時的處理液的溫度進行控制。由此,能夠減少想要的溫度與供給至基板的處理液的實際的溫度之差。並且,如果改變第1流量調整閥的開度,則能夠不改變加熱器的溫度而變更供給至基板的處理液的溫度。因此,與改變加熱器的溫度的情況相比,能夠在短時間內變更處理液的溫度。In this way, not only the temperature of the heater is properly managed, but also the flow rate of the processing liquid supplied to the first piping and the first nozzle, that is, the heat capacity of the processing liquid is appropriately set in accordance with the heating temperature and the first set temperature. Therefore, it is possible to control the temperature of the processing liquid when ejected from the first nozzle with higher accuracy. This can reduce the difference between the desired temperature and the actual temperature of the processing liquid supplied to the substrate. In addition, if the opening degree of the first flow rate adjustment valve is changed, the temperature of the processing liquid supplied to the substrate can be changed without changing the temperature of the heater. Therefore, compared with the case where the temperature of a heater is changed, the temperature of a processing liquid can be changed in a short time.
在所述實施形態中,也可將以下的特徵的至少一個添加至所述基板處理裝置。In the embodiment, at least one of the following features may be added to the substrate processing apparatus.
所述基板處理裝置還具備:第2噴嘴,噴出處理液;第2配管,將處理液引導至所述第2噴嘴;以及第2流量調整閥,對供給至所述第2配管的處理液的流量進行變更,所述控制裝置的所述資訊獲取部還獲取從所述第2噴嘴噴出時的處理液的溫度的目標值,即比所述加熱溫度低的第2設定溫度,所述控制裝置的所述記憶裝置還記憶第2開度決定資料,所述第2開度決定資料是對與在以所述加熱溫度被供給至所述第2配管的處理液以第2噴出溫度從所述第2噴嘴被噴出時被供給至所述第2配管的處理液的流量相對應的所述第2流量調整閥的開度進行規定的資料,所述控制裝置還包括:第2開度決定部,基於所述記憶裝置中所記憶的所述第2開度決定資料、與由所述資訊獲取部所獲取的所述加熱溫度以及第2設定溫度,決定與第2目標流量相對應的第2目標開度,所述第2目標流量使所述第2噴出溫度與所述第2設定溫度一致或接近;第2開度設定部,將所述第2流量調整閥的開度設定為所述第2目標開度;以及第2處理液供給部,經由所述第2配管將處理液供給至所述第2噴嘴。The substrate processing apparatus further includes: a second nozzle that discharges the processing liquid; a second pipe that guides the processing liquid to the second nozzle; and a second flow rate adjustment valve for the processing liquid that is supplied to the second pipe. The flow rate is changed, and the information acquisition unit of the control device further acquires a target value of the temperature of the processing liquid when ejected from the second nozzle, that is, a second set temperature lower than the heating temperature. The memory device further memorizes second opening degree determination data for the processing liquid supplied to the second pipe at the heating temperature from the second ejection temperature at the second discharge temperature. When the second nozzle is ejected, the opening degree of the second flow rate adjustment valve corresponding to the flow rate of the processing liquid supplied to the second pipe is predetermined data, and the control device further includes a second opening degree determining unit. , Based on the second opening degree determination data stored in the memory device, the heating temperature and the second set temperature obtained by the information acquisition unit, determine a second corresponding to the second target flow rate. Target opening degree, the second target flow Making the second discharge temperature coincide with or close to the second set temperature; a second opening setting unit that sets the opening of the second flow rate adjustment valve to the second target opening; and a second process The liquid supply unit supplies the processing liquid to the second nozzle through the second pipe.
根據所述構成,與第1噴嘴同樣地,對供給至第2配管以及第2噴嘴的處理液的流量進行規定的第2流量調整閥的開度基於控制裝置的記憶裝置中所記憶的第2開度決定資料而被設定為與使第2噴出溫度與第2設定溫度一致或接近的第2目標流量相對應的第2目標開度。在此狀態下,具有加熱溫度的處理液被供給至第2配管。由此,具有第2設定溫度或與所述第2設定溫度幾乎相同的溫度的處理液從第2噴嘴噴出。According to the above-mentioned configuration, similarly to the first nozzle, the opening degree of the second flow rate adjustment valve that regulates the flow rate of the processing liquid supplied to the second pipe and the second nozzle is based on the second degree stored in the memory device of the control device. The opening degree determination data is set to a second target opening degree corresponding to a second target flow rate at which the second discharge temperature coincides with or approaches the second set temperature. In this state, the processing liquid having a heating temperature is supplied to the second pipe. Thereby, the processing liquid having the second set temperature or a temperature almost the same as the second set temperature is ejected from the second nozzle.
直至被供給至基板為止處理液所損失的熱量有時因流路而不同。這是因為:有時流路的長度或構成流路的構件不同。如前述那樣,如果對第1流量調整閥以及第2流量調整閥的開度進行個別設定,則即使在所述情況下,也能夠減少想要的溫度與供給至基板的處理液的實際的溫度之差。由此,能夠以更高的精度來對經處理的基板的品質進行控制。The amount of heat lost by the processing liquid until it is supplied to the substrate may differ depending on the flow path. This is because the length of the flow path or the components constituting the flow path may be different. As described above, if the opening degrees of the first flow regulating valve and the second flow regulating valve are individually set, the desired temperature and the actual temperature of the processing liquid supplied to the substrate can be reduced even in this case. Difference. This makes it possible to control the quality of the processed substrate with higher accuracy.
第2設定溫度既可以是與第1設定溫度相等的值,也可以是與第1設定溫度不同的值。第2開度決定資料既可以是與第1開度決定資料不同的資料,也可以是與第1開度決定資料相同的資料。第2開度決定部既可以是第1開度決定部,也可以與第1開度決定部不同。第2開度設定部以及處理液供給部也與第2開度決定部一樣。至少一個加熱器既可以是對供給至第1噴嘴以及第2噴嘴這兩者的處理液進行加熱的一個加熱器,也可以包括對供給至第1噴嘴的處理液進行加熱的第1加熱器與對供給至第2噴嘴的處理液進行加熱的第2加熱器。The second set temperature may be a value equal to the first set temperature or a value different from the first set temperature. The second opening degree determination data may be different from the first opening degree determination data, or may be the same data as the first opening degree determination data. The second opening degree determining unit may be the first opening degree determining unit or may be different from the first opening degree determining unit. The second opening degree setting section and the processing liquid supply section are also the same as the second opening degree determining section. The at least one heater may be one heater that heats the processing liquid supplied to both the first nozzle and the second nozzle, or may include a first heater that heats the processing liquid supplied to the first nozzle and A second heater that heats the processing liquid supplied to the second nozzle.
所述基板處理裝置還具備:第1基板保持機構,對利用從所述第1噴嘴噴出的處理液進行處理的基板進行保持;以及第2基板保持機構,對利用從所述第2噴嘴噴出的處理液進行處理的基板進行保持。The substrate processing apparatus further includes a first substrate holding mechanism that holds a substrate processed by the processing liquid ejected from the first nozzle, and a second substrate holding mechanism that uses a substrate ejected from the second nozzle. The substrate processed by the processing liquid is held.
根據所述構成,從第1噴嘴噴出的處理液被供給至由第1基板保持機構所保持著的基板,從第2噴嘴噴出的處理液被供給至由與第1基板保持機構不同的第2基板保持機構所保持著的基板。即使在所述情況下,也能夠通過對第1流量調整閥以及第2流量調整閥的開度進行個別設定而使從第1噴嘴噴出時的處理液的實際的溫度與從第2噴嘴噴出時的處理液的實際的溫度一致或接近。由此,能夠減少利用從第1噴嘴噴出的處理液進行了處理的基板與利用從第2噴嘴噴出的處理液進行了處理的基板的品質之差。According to the above configuration, the processing liquid discharged from the first nozzle is supplied to the substrate held by the first substrate holding mechanism, and the processing liquid discharged from the second nozzle is supplied to the second substrate, which is different from the first substrate holding mechanism. The substrate held by the substrate holding mechanism. Even in such a case, the actual temperature of the processing liquid when discharged from the first nozzle and the time when discharged from the second nozzle can be set individually by setting the opening degrees of the first flow adjustment valve and the second flow adjustment valve. The actual temperature of the treatment liquid is consistent or close. This makes it possible to reduce the difference in quality between the substrate processed by the processing liquid ejected from the first nozzle and the substrate processed by the processing liquid ejected from the second nozzle.
所述基板處理裝置還具備基板保持機構,所述基板保持機構一面水平地保持利用從所述第1噴嘴以及第2噴嘴噴出的處理液進行處理的基板,一面使所述基板圍繞著通過所述基板的中央部的鉛垂的旋轉軸線旋轉,所述第1噴嘴朝向第1位置噴出處理液,所述第1位置是由所述基板保持機構所保持著的基板上的位置,所述第2噴嘴朝向第2位置噴出處理液,所述第2位置是由所述基板保持機構所保持著的基板上的位置,且是比所述第1位置靠外側的位置。The substrate processing apparatus further includes a substrate holding mechanism that holds the substrate processed by the processing liquid ejected from the first nozzle and the second nozzle while horizontally holding the substrate while passing through the substrate while surrounding the substrate. The vertical rotation axis of the central portion of the substrate rotates, the first nozzle ejects the processing liquid toward a first position, the first position is a position on the substrate held by the substrate holding mechanism, and the second position The nozzle ejects the processing liquid toward a second position, which is a position on the substrate held by the substrate holding mechanism, and is a position outside the first position.
根據所述構成,從第1噴嘴噴出的處理液與從第2噴嘴噴出的處理液被供給至相同的基板。第1噴嘴朝向基板上的位置即第1位置噴出處理液,第2噴嘴朝向相同基板上的位置即第2位置噴出處理液。第2位置是在基板的徑向上比第1位置靠外側的位置。因此,從第2噴嘴噴出的處理液在從第1噴嘴噴出的處理液的外側附著於基板。According to the configuration, the processing liquid discharged from the first nozzle and the processing liquid discharged from the second nozzle are supplied to the same substrate. The first nozzle ejects the processing liquid toward a first position on the substrate, and the second nozzle ejects the processing liquid toward a second position on the same substrate. The second position is a position outside the first position in the radial direction of the substrate. Therefore, the processing liquid discharged from the second nozzle is adhered to the substrate outside the processing liquid discharged from the first nozzle.
基板上的處理液的溫度有隨著遠離旋轉軸線而下降的傾向。如果對第1流量調整閥以及第2流量調整閥的開度進行個別設定,則能夠有意識地使從第2噴嘴噴出時的處理液的實際的溫度高於從第1噴嘴噴出時的處理液的實際的溫度。由此,能夠降低基板上的處理液的溫度的偏差,能夠提高處理的均勻性。當然,也可以從第1噴嘴以及第2噴嘴噴出相同或者幾乎相同的溫度的處理液。The temperature of the processing liquid on the substrate tends to decrease as it moves away from the rotation axis. If the openings of the first flow control valve and the second flow control valve are individually set, the actual temperature of the processing liquid when discharged from the second nozzle can be made higher than the processing liquid when discharged from the first nozzle. The actual temperature. This makes it possible to reduce variations in the temperature of the processing liquid on the substrate and improve the uniformity of processing. Of course, you may eject the processing liquid of the same or almost the same temperature from a 1st nozzle and a 2nd nozzle.
所述基板處理裝置還具備共用配管,將處理液供給至所述第1配管以及第2配管這兩者。The substrate processing apparatus further includes a common pipe, and supplies a processing liquid to both the first pipe and the second pipe.
根據所述構成,在共同配管內流動的處理液被供給至第1配管以及第2配管這兩者。因此,至少成分相等的處理液從第1噴嘴以及第2噴嘴這兩者噴出。在從第1噴嘴以及第2噴嘴噴出的處理液被供給至不同的基板的情況下,能夠降低多枚基板間的處理的偏差。在從第1噴嘴以及第2噴嘴噴出的處理液被供給至相同的基板的情況下,能夠提高處理的均勻性。With this configuration, the processing liquid flowing in the common pipe is supplied to both the first pipe and the second pipe. Therefore, at least the processing liquid having the same composition is discharged from both the first nozzle and the second nozzle. When the processing liquid ejected from the first nozzle and the second nozzle is supplied to different substrates, it is possible to reduce variations in processing between a plurality of substrates. When the processing liquid discharged from the first nozzle and the second nozzle is supplied to the same substrate, the uniformity of processing can be improved.
所述基板處理裝置還具備共用配管,將處理液供給至所述第1配管以及第2配管這兩者,所述基板處理裝置通過將作為處理液的磷酸供給至露出氧化矽膜與氮化矽膜的基板,一面抑制所述氧化矽膜的蝕刻一面對所述氮化矽膜進行蝕刻。The substrate processing apparatus further includes a common pipe for supplying a processing liquid to both the first pipe and the second pipe. The substrate processing apparatus supplies phosphoric acid as a processing solution to the exposed silicon oxide film and silicon nitride. The substrate of the film is etched while suppressing the etching of the silicon oxide film and facing the silicon nitride film.
根據所述構成,由加熱器進行了加熱的高溫的磷酸(例如,其濃度下的沸點的磷酸)從共用配管被供給至第1配管以及第2配管這兩者,並從第1噴嘴以及第2噴嘴這兩者噴出。噴出的磷酸被供給至露出氧化矽膜與氮化矽膜的基板。由此,進行一面抑制氧化矽膜的蝕刻一面對氮化矽膜進行蝕刻的選擇蝕刻。According to the above configuration, high-temperature phosphoric acid (for example, phosphoric acid having a boiling point at a concentration) heated by the heater is supplied from the common pipe to both the first pipe and the second pipe, and from the first nozzle and the first pipe. Both nozzles eject. The ejected phosphoric acid is supplied to a substrate on which the silicon oxide film and the silicon nitride film are exposed. Thereby, selective etching is performed while suppressing the etching of the silicon oxide film and etching the silicon nitride film.
尤其,如果以從第2噴嘴噴出時的磷酸的實際的溫度高於從第1噴嘴噴出時的磷酸的實際的溫度的方式對第1流量調整閥以及第2流量調整閥的開度進行個別設定,則能夠降低基板上的磷酸的溫度的偏差,能夠進一步提高蝕刻的均勻性。另外,因成分相等的磷酸從第1噴嘴以及第2噴嘴朝向相同的基板噴出,所以能夠抑制或防止選擇比(氮化矽膜的蝕刻量/氧化矽膜的蝕刻量)的均勻性下降。In particular, if the actual temperature of the phosphoric acid when ejected from the second nozzle is higher than the actual temperature of the phosphoric acid when ejected from the first nozzle, the openings of the first flow rate adjustment valve and the second flow rate adjustment valve are individually set. , The variation in the temperature of phosphoric acid on the substrate can be reduced, and the uniformity of etching can be further improved. In addition, since phosphoric acid having the same composition is ejected from the first nozzle and the second nozzle toward the same substrate, it is possible to suppress or prevent the uniformity of the selectivity ratio (the amount of etching of the silicon nitride film / the amount of etching of the silicon oxide film) from decreasing.
所述第1開度設定部將所述第1流量調整閥的開度設定為比所述第1目標開度大的第1初始開度,之後,使所述第1流量調整閥的開度從所述第1初始開度減少至所述第1目標開度。The first opening degree setting unit sets the opening degree of the first flow adjustment valve to a first initial opening degree larger than the first target opening degree, and thereafter, sets the opening degree of the first flow adjustment valve. Decreasing from the first initial opening degree to the first target opening degree.
根據所述構成,控制裝置的第1開度設定部將第1流量調整閥的開度設定為比第1目標開度大的第1初始開度。在此狀態下,控制裝置的第1處理液供給部將處理液經由第1配管而供給至第1噴嘴。之後,控制裝置的第1開度設定部使第1流量調整閥的開度從第1初始開度減少至第1目標開度。在此狀態下,控制裝置的第1處理液供給部將處理液經由第1配管供給至第1噴嘴。According to the above configuration, the first opening degree setting unit of the control device sets the opening degree of the first flow rate adjustment valve to a first initial opening degree greater than the first target opening degree. In this state, the first processing liquid supply unit of the control device supplies the processing liquid to the first nozzle through the first pipe. After that, the first opening degree setting unit of the control device reduces the opening degree of the first flow rate adjustment valve from the first initial opening degree to the first target opening degree. In this state, the first processing liquid supply unit of the control device supplies the processing liquid to the first nozzle through the first pipe.
剛開始向第1配管以及第1噴嘴供給處理液時,第1配管以及第1噴嘴還處於冰冷狀態,因此熱損失量相對大。另一方面,當開始供給處理液後經過一定程度的時間時,第1配管以及第1噴嘴變暖,因此熱損失量減少。因此,當以相同的流量將相同溫度的處理液持續供給至第1配管以及第1噴嘴時,從第1噴嘴噴出時的處理液的溫度隨時間的經過而發生變化。When the processing liquid is first supplied to the first piping and the first nozzle, the first piping and the first nozzle are still in an ice-cold state, so the heat loss is relatively large. On the other hand, when a certain amount of time elapses after the start of the supply of the processing liquid, the first pipe and the first nozzle are warmed, so the amount of heat loss is reduced. Therefore, when the processing liquid of the same temperature is continuously supplied to the first pipe and the first nozzle at the same flow rate, the temperature of the processing liquid when discharged from the first nozzle changes with the passage of time.
根據所述構成,使供給至第1配管以及第1噴嘴的處理液的流量隨時間的經過而減少。換句話說,處理液的供給開始時,以相對大的流量將處理液供給至第1配管以及第1噴嘴。然後,當第1配管以及第1噴嘴變暖時,則以相對小的流量將處理液供給至第1配管以及第1噴嘴。由此,能夠減少從第1噴嘴噴出時的處理液的溫度的變動量。According to the above configuration, the flow rate of the processing liquid supplied to the first piping and the first nozzle is reduced as time passes. In other words, when the supply of the processing liquid is started, the processing liquid is supplied to the first pipe and the first nozzle at a relatively large flow rate. Then, when the first pipe and the first nozzle become warm, the processing liquid is supplied to the first pipe and the first nozzle at a relatively small flow rate. This can reduce the amount of fluctuation in the temperature of the processing liquid when ejected from the first nozzle.
所述基板處理裝置還具備對處理液的溫度進行檢測的溫度感測器,當由所述溫度感測器所檢測出的處理液的溫度達到切換溫度時,所述第1開度設定部使所述第1流量調整閥的開度從所述第1初始開度減少至所述第1目標開度。The substrate processing apparatus further includes a temperature sensor that detects a temperature of the processing liquid, and when the temperature of the processing liquid detected by the temperature sensor reaches a switching temperature, the first opening setting unit makes The opening degree of the first flow adjustment valve is reduced from the first initial opening degree to the first target opening degree.
根據所述構成,由溫度感測器對供給至基板前的處理液或位於基板上的處理液的溫度進行檢測。當由溫度感測器所檢測出的處理液的溫度達到切換溫度時,即,當確認到第1配管以及第1噴嘴變暖時,控制裝置的第1開度設定部使第1流量調整閥的開度從第1初始開度減少至第1目標開度。因此,能夠防止儘管第1配管以及第1噴嘴變暖仍以相對大的流量將處理液持續供給至第1配管以及第1噴嘴這一情況。According to the configuration, the temperature of the processing liquid before being supplied to the substrate or the processing liquid on the substrate is detected by the temperature sensor. When the temperature of the processing liquid detected by the temperature sensor reaches the switching temperature, that is, when it is confirmed that the first pipe and the first nozzle are warmed, the first opening setting section of the control device causes the first flow adjustment valve The opening degree of is reduced from the first initial opening degree to the first target opening degree. Therefore, it is possible to prevent the case where the processing liquid is continuously supplied to the first pipe and the first nozzle at a relatively large flow rate despite the warming of the first pipe and the first nozzle.
溫度感測器既可以對供給至基板前的處理液的溫度進行檢測,也可以對基板上的處理液的溫度進行檢測,還可以在收容第1噴嘴的腔室(chamber)內對處理液的溫度進行檢測。在對供給至基板前的處理液的溫度進行檢測的情況下,溫度感測器既可以對第1配管內的處理液的溫度進行檢測,也可以對第1噴嘴內的處理液的溫度進行檢測。The temperature sensor can detect the temperature of the processing liquid before being supplied to the substrate, or the temperature of the processing liquid on the substrate, and can also detect the temperature of the processing liquid in the chamber containing the first nozzle. The temperature is detected. When detecting the temperature of the processing liquid before being supplied to the substrate, the temperature sensor may detect the temperature of the processing liquid in the first pipe, or may detect the temperature of the processing liquid in the first nozzle. .
本發明的另一其他實施形態提供一種基板處理方法,其是由基板處理裝置所執行的方法,所述基板處理裝置具備:至少一個加熱器,對處理液進行加熱;第1配管,對由所述至少一個加熱器進行了加熱的處理液進行引導;第1流量調整閥,對供給至所述第1配管的處理液的流量進行變更;第1噴嘴,將由所述第1配管引導的處理液朝向基板噴出;以及控制裝置,對所述至少一個加熱器與所述第1流量調整閥進行控制。Another embodiment of the present invention provides a substrate processing method, which is a method executed by a substrate processing apparatus including: at least one heater to heat a processing liquid; and a first pipe to the substrate. The at least one heater guides the processing liquid heated; the first flow rate adjusting valve changes the flow rate of the processing liquid supplied to the first pipe; and the first nozzle guides the processing liquid guided by the first pipe. Ejecting toward the substrate; and a control device that controls the at least one heater and the first flow rate adjustment valve.
所述基板處理方法包括如下步驟:資訊獲取步驟,獲取表示由所述至少一個加熱器進行了加熱的處理液的溫度的目標值的加熱溫度、與從所述第1噴嘴噴出時的處理液的溫度的目標值,即比所述加熱溫度低的第1設定溫度;加熱執行步驟,使所述至少一個加熱器以所述加熱溫度對處理液進行加熱;第1開度決定步驟,基於第1開度決定資料、與由所述資訊獲取步驟所獲取的所述加熱溫度以及第1設定溫度,決定與第1目標流量相對應的第1目標開度,所述第1目標流量使所述第1噴出溫度與所述第1設定溫度一致或接近,所述第1開度決定資料是所述控制裝置的記憶裝置中所記憶的資料,且是對與在以所述加熱溫度被供給至所述第1配管的處理液以第1噴出溫度從所述第1噴嘴被噴出時被供給至所述第1配管的處理液的流量相對應的所述第1流量調整閥的開度進行規定的資料;第1開度設定步驟,將所述第1流量調整閥的開度設定為所述第1目標開度;以及第1處理液供給步驟,經由所述第1配管將處理液供給至所述第1噴嘴。根據所述構成,能夠起到與前述效果相同的效果。The substrate processing method includes the following steps: an information obtaining step of obtaining a heating temperature indicating a target value of a temperature of a processing liquid heated by the at least one heater, and a temperature The target value of the temperature is the first set temperature lower than the heating temperature; the heating execution step causes the at least one heater to heat the processing liquid at the heating temperature; the first opening degree determination step is based on the first The opening degree determination data, the heating temperature and the first set temperature obtained in the information obtaining step determine a first target opening degree corresponding to a first target flow rate, and the first target flow rate causes the first 1 The ejection temperature is the same as or close to the first set temperature, and the first opening degree determination data is data stored in the memory device of the control device, and is supplied to the controller at the heating temperature. The opening degree of the first flow control valve corresponding to the flow rate of the processing liquid supplied to the first pipe when the processing liquid of the first pipe is discharged from the first nozzle at the first discharge temperature is prescribed. Data; a first opening degree setting step, setting the opening degree of the first flow rate adjustment valve to the first target opening degree; and a first treatment liquid supply step, supplying the treatment liquid to the place through the first pipe. The first nozzle is described. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
在所述實施形態中,也可將以下的特徵的至少一個添加至所述基板處理方法。In the embodiment, at least one of the following features may be added to the substrate processing method.
所述基板處理裝置還具備:第2噴嘴,噴出處理液;第2配管,將處理液引導至所述第2噴嘴;以及第2流量調整閥,對供給至所述第2配管的處理液的流量進行變更,所述控制裝置的所述記憶裝置還記憶第2開度決定資料,所述第2開度決定資料是對與在以所述加熱溫度被供給至所述第2配管的處理液以第2噴出溫度從所述第2噴嘴被噴出時被供給至所述第2配管的處理液的流量相對應的所述第2流量調整閥的開度進行規定的資料,所述基板處理方法還包括如下步驟:第2開度決定步驟,基於所述記憶裝置中所記憶的所述第2開度決定資料、與所述資訊獲取部所獲取的所述加熱溫度以及第2設定溫度,決定與第2目標流量相對應的第2目標開度,所述第2目標流量使所述第2噴出溫度與所述第2設定溫度一致或接近;第2開度設定步驟,將所述第2流量調整閥的開度設定為所述第2目標開度;以及第2處理液供給步驟,經由所述第2配管將處理液供給至所述第2噴嘴。根據所述構成,能夠起到與前述效果相同的效果。The substrate processing apparatus further includes: a second nozzle that discharges the processing liquid; a second pipe that guides the processing liquid to the second nozzle; and a second flow rate adjustment valve for the processing liquid that is supplied to the second pipe. The flow rate is changed, and the memory device of the control device further memorizes second opening degree determination data for the processing liquid supplied to the second pipe at the heating temperature. Predetermined data of the opening degree of the second flow adjustment valve corresponding to the flow rate of the processing liquid supplied to the second pipe when the second discharge temperature is discharged from the second nozzle, and the substrate processing method The method further includes a step of determining a second opening degree based on the second opening degree determination data stored in the memory device, and the heating temperature and the second set temperature obtained by the information acquisition unit. A second target opening degree corresponding to a second target flow rate, the second target flow rate makes the second ejection temperature coincide or be close to the second set temperature; the second opening degree setting step changes the second opening degree The opening degree of the flow regulating valve is set as described A second target opening degree; and a second processing liquid supply step, wherein the processing liquid is supplied to the second nozzle through the second pipe. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
所述基板處理裝置還具備:第1基板保持機構,對利用從所述第1噴嘴噴出的處理液進行處理的基板進行保持;以及第2基板保持機構,對利用從所述第2噴嘴噴出的處理液進行處理的基板進行保持。根據所述構成,能夠起到與前述效果相同的效果。The substrate processing apparatus further includes a first substrate holding mechanism that holds a substrate processed by the processing liquid ejected from the first nozzle, and a second substrate holding mechanism that uses a substrate ejected from the second nozzle. The substrate processed by the processing liquid is held. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
所述基板處理裝置還具備基板保持機構,所述基板保持機構一面水平地保持利用從所述第1噴嘴以及第2噴嘴噴出的處理液進行處理的基板,一面使所述基板圍繞著通過所述基板的中央部的鉛垂的旋轉軸線旋轉,所述基板處理方法還包括:第1噴出步驟,使所述第1噴嘴朝向第1位置噴出處理液,所述第1位置是由所述基板保持機構所保持著的基板上的位置,第2噴出步驟,使所述第2噴嘴朝向第2位置噴出處理液,所述第2位置是由所述基板保持機構所保持著的基板上的位置,且是比所述第1位置靠外側的位置。根據所述構成,能夠起到與前述效果相同的效果。The substrate processing apparatus further includes a substrate holding mechanism that holds the substrate processed by the processing liquid ejected from the first nozzle and the second nozzle while horizontally holding the substrate while passing through the substrate while surrounding the substrate. The vertical rotation axis of the central portion of the substrate rotates, and the substrate processing method further includes a first ejection step of ejecting the processing liquid toward the first position, and the first position is held by the substrate The second position is the position on the substrate held by the mechanism, and the second ejecting step causes the second nozzle to eject the processing liquid toward the second position, the second position being the position on the substrate held by the substrate holding mechanism, It is a position further outside than the said 1st position. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
所述基板處理裝置還具備共用配管,將處理液供給至所述第1配管以及第2配管這兩者。根據所述構成,能夠起到與前述效果相同的效果。The substrate processing apparatus further includes a common pipe, and supplies a processing liquid to both the first pipe and the second pipe. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
所述基板處理裝置還具備共用配管,將處理液供給至所述第1配管以及第2配管這兩者,所述基板處理方法通過將作為處理液的磷酸供給至露出氧化矽膜與氮化矽膜的基板,一面抑制所述氧化矽膜的蝕刻一面對所述氮化矽膜進行蝕刻。根據所述構成,能夠起到與前述效果相同的效果。The substrate processing apparatus further includes a common pipe for supplying a processing liquid to both the first pipe and the second pipe, and the substrate processing method supplies phosphoric acid as a processing liquid to the exposed silicon oxide film and silicon nitride. The substrate of the film is etched while suppressing the etching of the silicon oxide film and facing the silicon nitride film. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
所述第1開度設定步驟將所述第1流量調整閥的開度設定為比所述第1目標開度大的第1初始開度,之後,使所述第1流量調整閥的開度從所述第1初始開度減少至所述第1目標開度。根據所述構成,能夠起到與前述效果相同的效果。The first opening degree setting step sets the opening degree of the first flow rate adjustment valve to a first initial opening degree greater than the first target opening degree, and thereafter, makes the opening degree of the first flow rate adjustment valve. Decreasing from the first initial opening degree to the first target opening degree. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
所述基板處理裝置還具備對處理液的溫度進行檢測的溫度感測器,當由所述溫度感測器所檢測出的處理液的溫度達到切換溫度時,所述第1開度設定步驟使所述第1流量調整閥的開度從所述第1初始開度減少至所述第1目標開度。根據所述構成,能夠起到與前述效果相同的效果。The substrate processing apparatus further includes a temperature sensor that detects a temperature of the processing liquid. When the temperature of the processing liquid detected by the temperature sensor reaches a switching temperature, the first opening setting step enables The opening degree of the first flow adjustment valve is reduced from the first initial opening degree to the first target opening degree. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
本發明的進而另一實施形態提供一種基板處理裝置,其具備:加熱器,對處理液進行加熱;處理液配管,對由所述加熱器進行了加熱的處理液進行引導;基板保持機構,對基板進行保持;噴嘴,將經由所述處理液配管而被供給的處理液朝向由所述基板保持機構所保持著的基板噴出;閥,對流經所述處理液配管的處理液的流量進行調節;溫度感測器,對在所述處理液配管內流動的處理液的溫度進行檢測,資訊獲取機構,獲取設定溫度,所述設定溫度是從所述噴嘴噴出的處理液的溫度的目標值;以及控制裝置,基於由所述溫度感測器所檢測出的溫度與由所述資訊獲取機構所獲取的處理液的設定溫度,對所述閥的開度進行控制。根據所述構成,能夠通過簡易的構成來使從噴嘴噴出的處理液的溫度接近目標溫度。Still another embodiment of the present invention provides a substrate processing apparatus including a heater for heating a processing liquid, a processing liquid pipe for guiding the processing liquid heated by the heater, and a substrate holding mechanism for The substrate is held; the nozzle ejects the processing liquid supplied through the processing liquid pipe toward the substrate held by the substrate holding mechanism; the valve adjusts the flow rate of the processing liquid flowing through the processing liquid pipe; A temperature sensor that detects the temperature of the processing liquid flowing in the processing liquid pipe, and an information acquisition mechanism that acquires a set temperature, the set temperature being a target value of the temperature of the processing liquid ejected from the nozzle; The control device controls the opening degree of the valve based on the temperature detected by the temperature sensor and the set temperature of the processing liquid acquired by the information acquisition mechanism. According to the configuration, the temperature of the processing liquid discharged from the nozzle can be brought close to the target temperature with a simple configuration.
所述控制裝置也可將由所述資訊獲取機構所獲取的所述設定溫度與由所述溫度感測器所檢測出的處理液的溫度進行比較,在由所述溫度感測器所檢測出的處理液的溫度超過所述設定溫度的情況下,對所述閥的開度進行變更,以減少所述處理液的流量,在由所述溫度感測器所檢測出的處理液的溫度低於所述設定溫度的情況下,變更所述閥的開度,以增加所述處理液的流量。根據所述構成,能夠起到與前述效果相同的效果。The control device may also compare the set temperature obtained by the information acquisition mechanism with the temperature of the processing liquid detected by the temperature sensor, and determine the temperature of the set temperature detected by the temperature sensor. When the temperature of the processing liquid exceeds the set temperature, the opening degree of the valve is changed to reduce the flow rate of the processing liquid. When the temperature of the processing liquid detected by the temperature sensor is lower than In the case of the set temperature, the opening degree of the valve is changed to increase the flow rate of the processing liquid. According to the configuration, it is possible to achieve the same effect as the aforementioned effect.
本發明中前述的或者進而另一目的、特徵以及效果通過接下來參照添附圖示進行敘述的實施形態的說明而明確。The aforementioned or further objects, features, and effects of the present invention will be made clear by the following description of embodiments with reference to the accompanying drawings.
圖1是從上方觀察本發明的第1實施形態的基板處理裝置1的示意圖。FIG. 1 is a schematic view of a substrate processing apparatus 1 according to a first embodiment of the present invention as viewed from above.
基板處理裝置1是對半導體晶圓等圓板狀的基板W一片片地進行處理的單片式裝置。基板處理裝置1包括保持對基板W進行收容的多個載體C的多個裝載埠(load port)LP、利用處理液或處理氣體等處理流體對從多個裝載埠LP搬送來的基板W進行處理的多個處理單元2、與對基板處理裝置1進行控制的控制裝置3。The substrate processing apparatus 1 is a single-chip apparatus that processes a disc-shaped substrate W such as a semiconductor wafer one by one. The substrate processing apparatus 1 includes a plurality of load ports LP holding a plurality of carriers C that house a substrate W, and processes a substrate W transferred from the plurality of load ports LP using a processing fluid such as a processing liquid or a processing gas. A plurality of processing units 2 and a control device 3 that controls the substrate processing apparatus 1.
基板處理裝置1還包括在裝載埠LP與處理單元2之間搬送基板W的搬送機器人。搬送機器人包括索引機器人(indexer robot)IR及中心機器人(center robot)CR。索引機器人IR是在裝載埠LP與中心機器人CR之間搬送基板W。中心機器人CR是在索引機器人IR與處理單元2之間搬送基板W。索引機器人IR以及中心機器人CR包括支撐基板W的手部。The substrate processing apparatus 1 further includes a transfer robot that transfers the substrate W between the loading port LP and the processing unit 2. The transfer robot includes an indexer robot IR and a center robot CR. The index robot IR transfers the substrate W between the loading port LP and the center robot CR. The center robot CR transfers the substrate W between the indexing robot IR and the processing unit 2. The index robot IR and the center robot CR include a hand supporting the substrate W.
基板處理裝置1包含收容後述開閉閥25等流體設備的多個(四個)流體箱4。處理單元2及流體箱4配置在基板處理裝置1的外壁1a中,由基板處理裝置1的外壁1a覆蓋。收容後述藥液槽31等的多個(四個)藥液櫃體(cabinet)5配置在基板處理裝置1的外壁1a之外。藥液櫃體5也可以配置在基板處理裝置1的側方,還可以配置在設置基板處理裝置1的潔淨室(clean room)的下方(地下)。The substrate processing apparatus 1 includes a plurality of (four) fluid tanks 4 that accommodate fluid devices such as an on-off valve 25 described later. The processing unit 2 and the fluid tank 4 are arranged on the outer wall 1 a of the substrate processing apparatus 1, and are covered by the outer wall 1 a of the substrate processing apparatus 1. A plurality of (four) medicinal solution cabinets 5 for storing a medicinal solution tank 31 and the like described later are arranged outside the outer wall 1 a of the substrate processing apparatus 1. The medicinal solution cabinet 5 may be disposed on the side of the substrate processing apparatus 1, or may be disposed below (underground) a clean room in which the substrate processing apparatus 1 is installed.
多個處理單元2形成了俯視時以環繞中心機器人CR的方式而配置的四個塔。各塔包含上下層疊著的三個處理單元2。四個藥液櫃體5分別與四個塔相對應。四個流體箱4分別與四個藥液櫃體5相對應。藥液櫃體5內的藥液是經由相對應的流體箱4而供給至同一塔中所含的三個處理單元2。The plurality of processing units 2 form four towers arranged in a plan view so as to surround the central robot CR. Each tower includes three processing units 2 stacked on top of each other. The four medicinal solution cabinets 5 correspond to four towers, respectively. The four fluid tanks 4 respectively correspond to the four medicinal liquid cabinets 5. The chemical liquid in the chemical liquid cabinet 5 is supplied to the three processing units 2 included in the same tower through the corresponding fluid tank 4.
圖2是水平地觀察處理單元2的內部的示意圖。FIG. 2 is a schematic view of the inside of the processing unit 2 viewed horizontally.
處理單元2包括具有內部空間的箱型的腔室6、在腔室6內一面水平地保持基板W一面使基板W圍繞著通過基板W的中央部的鉛垂的旋轉軸線A1旋轉的自旋夾頭(spin chuck)10、以及接住從基板W排出的處理液的筒狀的杯體(cup)14。自旋夾頭10是基板保持機構及基板保持單元的一例。The processing unit 2 includes a box-shaped chamber 6 having an internal space, and a spin clamp that rotates the substrate W around a vertical rotation axis A1 passing through a central portion of the substrate W while holding the substrate W horizontally in the chamber 6. A spin chuck 10 and a cylindrical cup 14 which receives the processing liquid discharged from the substrate W. The spin chuck 10 is an example of a substrate holding mechanism and a substrate holding unit.
腔室6包括設置有基板W所經過的搬入搬出口的箱型的隔壁8、使搬入搬出口開閉的擋板(shutter)9、以及在腔室6內形成通過過濾器而過濾的空氣即潔淨空氣(clean air)的向下流(down flow)的風機過濾單元(fan filter unit,FFU)7。腔室6內的氣溫因由FFU 7送來的潔淨空氣而維持為固定。中心機器人CR通過搬入搬出口將基板W搬入至腔室6,並通過搬入搬出口從腔室6搬出基板W。The chamber 6 includes a box-shaped partition wall 8 provided with a loading / unloading port through which the substrate W passes, a shutter 9 for opening / closing the loading / unloading port, and clean air formed in the chamber 6 by a filter. Fan filter unit (FFU) 7 for down flow of clean air. The temperature in the chamber 6 is maintained constant by the clean air sent from the FFU 7. The central robot CR carries the substrate W into the chamber 6 through the carry-in / out port, and carries the substrate W out of the chamber 6 through the carry-in / out port.
自旋夾頭10包括以水平姿勢而受到保持的圓板狀的自旋底座12、在自旋底座12的上方將基板W以水平姿勢加以保持的多個夾頭銷(chuck pin)11、以及通過使多個夾頭銷11旋轉而使基板W圍繞旋轉軸線A1旋轉的自旋馬達13。自旋夾頭10並不限於使多個夾頭銷11與基板W的外周面接觸的夾持式的夾頭,還可以是通過使非器件形成面即基板W的背面(下表面)吸附於自旋底座12的上表面而水平地保持基板W的真空(vacuum)式的夾頭。The spin chuck 10 includes a disc-shaped spin base 12 held in a horizontal posture, a plurality of chuck pins 11 holding the substrate W in a horizontal posture above the spin base 12, and The spin motor 13 that rotates the plurality of chuck pins 11 to rotate the substrate W about the rotation axis A1. The spin chuck 10 is not limited to a clamp type chuck in which a plurality of chuck pins 11 are brought into contact with the outer peripheral surface of the substrate W, and may be adsorbed on a back surface (lower surface) of the substrate W which is a non-device forming surface A vacuum-type chuck that holds the substrate W horizontally is rotated on the upper surface of the spin base 12.
杯體14包括朝向旋轉軸線A1向斜上方延伸的筒狀的傾斜部14a、從傾斜部14a的下端部(外端部)向下方延伸的圓筒狀的引導部14b、以及形成朝向上方敞開的環狀的溝槽的收液部14c。傾斜部14a包含具有大於基板W及自旋底座12的內徑的圓環狀的上端。傾斜部14a的上端相當於杯體14的上端。杯體14的上端在俯視時環繞著基板W及自旋底座12。The cup 14 includes a cylindrical inclined portion 14a extending obliquely upward toward the rotation axis A1, a cylindrical guide portion 14b extending downward from a lower end portion (outer end portion) of the inclined portion 14a, and is formed to open upward. The liquid receiving part 14c of the annular groove. The inclined portion 14 a includes a ring-shaped upper end having an inner diameter larger than the inner diameter of the substrate W and the spin base 12. The upper end of the inclined portion 14 a corresponds to the upper end of the cup body 14. The upper end of the cup body 14 surrounds the substrate W and the spin base 12 in a plan view.
處理單元2包含使杯體14在上位置(圖2所示的位置)與下位置之間鉛垂地升降的杯體升降單元15,所述上位置是指杯體14的上端位於比自旋夾頭10保持基板W的保持位置更上方的位置,所述下位置是指杯體14的上端位於比保持位置更下方的位置。當將處理液供給至基板W時,杯體14配置在上位置。從基板W飛散至外側的處理液在被傾斜部14a接住之後,通過引導部14b而收集至收液部14c內。The processing unit 2 includes a cup lifting unit 15 for vertically lifting the cup 14 between an upper position (the position shown in FIG. 2) and a lower position. The upper position means that the upper end of the cup 14 is located at a position higher than the spin. The chuck 10 holds the holding position of the substrate W at an upper position, and the lower position means that the upper end of the cup 14 is located at a position lower than the holding position. When the processing liquid is supplied to the substrate W, the cup body 14 is disposed at the upper position. The processing liquid scattered from the substrate W to the outside is caught by the inclined portion 14 a and then collected by the guide portion 14 b into the liquid receiving portion 14 c.
處理單元2包括朝向由自旋夾頭10保持著的基板W的上表面向下方噴出藥液的藥液噴嘴21。藥液噴嘴21與插裝有開閉閥25的藥液配管22連接。處理單元2包括在處理位置與退避位置之間使藥液噴嘴21水平地移動的噴嘴移動單元27,在所述處理位置,將從藥液噴嘴21噴出的藥液供給至基板W的上表面,在所述退避位置,藥液噴嘴21在俯視時遠離基板W。噴嘴移動單元27例如是使藥液噴嘴21圍繞著在杯體14的周圍鉛垂地延伸的噴嘴轉動軸線A2水平移動的迴旋單元。The processing unit 2 includes a chemical solution nozzle 21 that ejects the chemical solution downward toward the upper surface of the substrate W held by the spin chuck 10. The medicinal solution nozzle 21 is connected to a medicinal solution pipe 22 in which an on-off valve 25 is inserted. The processing unit 2 includes a nozzle moving unit 27 that moves the chemical liquid nozzle 21 horizontally between a processing position and a retreat position, at which the chemical liquid ejected from the chemical liquid nozzle 21 is supplied to the upper surface of the substrate W, In the retracted position, the chemical liquid nozzle 21 is away from the substrate W in a plan view. The nozzle moving unit 27 is, for example, a swivel unit that horizontally moves a liquid medicine nozzle 21 around a nozzle rotation axis A2 extending vertically around the periphery of the cup body 14.
當打開開閉閥25時,將藥液從藥液配管22供給至藥液噴嘴21,並從藥液噴嘴21噴出。藥液例如是作為蝕刻液的一例的磷酸。藥液也可以是磷酸以外的液體。也可以將包含例如硫酸、硝酸、鹽酸、氫氟酸、磷酸、醋酸、氨水、過氧化氫水、有機酸(例如檸檬酸、草酸等)、有機鹼(例如,氫氧化四甲基銨(Tetramethyl Ammonium Hydroxide,TMAH)等)、表面活性劑及防腐劑中的至少一種的液體供給至藥液噴嘴21。When the on-off valve 25 is opened, the medicinal solution is supplied from the medicinal solution pipe 22 to the medicinal solution nozzle 21 and is ejected from the medicinal solution nozzle 21. The chemical solution is, for example, phosphoric acid as an example of the etching solution. The chemical solution may be a liquid other than phosphoric acid. It may also contain, for example, sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia, aqueous hydrogen peroxide, organic acids (such as citric acid, oxalic acid, etc.), organic bases (such as tetramethylammonium hydroxide (Tetramethyl Ammonium Hydroxide (TMAH), etc.), a liquid of at least one of a surfactant and a preservative is supplied to the chemical liquid nozzle 21.
處理單元2包含朝向由自旋夾頭10保持著的基板W的上表面向下方噴出沖洗液的沖洗液噴嘴16。沖洗液噴嘴16與插裝有沖洗液閥18的沖洗液配管17連接。處理單元2也可以包括在處理位置與退避位置之間使沖洗液噴嘴16水平地移動的噴嘴移動單元,在所述處理位置,將從沖洗液噴嘴16噴出的沖洗液供給至基板W,在所述退避位置,沖洗液噴嘴16在俯視時遠離基板W。The processing unit 2 includes a rinse liquid nozzle 16 that ejects the rinse liquid downward toward the upper surface of the substrate W held by the spin chuck 10. The rinse liquid nozzle 16 is connected to a rinse liquid pipe 17 in which a rinse liquid valve 18 is inserted. The processing unit 2 may include a nozzle moving unit that moves the washing liquid nozzle 16 horizontally between the processing position and the retreat position. At the processing position, the washing liquid sprayed from the washing liquid nozzle 16 is supplied to the substrate W, and In the retracted position, the rinse liquid nozzle 16 is separated from the substrate W in a plan view.
當打開沖洗液閥18時,將沖洗液從沖洗液配管17供給至沖洗液噴嘴16,並從沖洗液噴嘴16噴出。沖洗液例如為純水(去離子水:Deionized water)。沖洗液並不限於純水,還可以是碳酸水、電解離子水、氫水、臭氧水及稀釋濃度(例如,10 ppm~100 ppm程度)的鹽酸水中的任一者。When the flushing liquid valve 18 is opened, the flushing liquid is supplied from the flushing liquid pipe 17 to the flushing liquid nozzle 16 and ejected from the flushing liquid nozzle 16. The rinsing liquid is, for example, pure water (deionized water). The rinsing liquid is not limited to pure water, and may be any of carbonated water, electrolytic ion water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 ppm to 100 ppm).
圖3是表示本發明的第1實施形態的藥液供給系統的示意圖。圖3中,利用一點鏈線表示流體箱4,利用雙點鏈線表示藥液櫃體5。一點鏈線所圍繞的區域中配置的構件是配置在流體箱4內,雙點鏈線所圍繞的區域中配置的構件是配置在藥液櫃體5內。FIG. 3 is a schematic diagram showing a medicinal solution supply system according to the first embodiment of the present invention. In FIG. 3, the fluid tank 4 is represented by a one-dot chain line, and the medicinal solution cabinet 5 is represented by a two-dot chain line. The components arranged in the area surrounded by the one-point chain line are arranged in the fluid tank 4, and the components arranged in the area surrounded by the two-point chain line are arranged in the medicinal solution cabinet 5.
基板處理裝置1包括分別對應於由多個處理單元2所形成的多個塔的多個藥液供給系統。藥液供給系統將藥液供給至相同的塔中所包括的所有的處理單元2。圖3示出了一個藥液供給系統、與對應於所述藥液供給系統的3個處理單元2。The substrate processing apparatus 1 includes a plurality of chemical liquid supply systems respectively corresponding to a plurality of towers formed by a plurality of processing units 2. The chemical liquid supply system supplies the chemical liquid to all the processing units 2 included in the same tower. FIG. 3 shows a medicinal solution supply system and three processing units 2 corresponding to the medicinal solution supply system.
藥液供給系統包括對供給至基板W的藥液進行貯存的藥液槽31、與形成使藥液槽31內的藥液循環的環狀的循環路徑的循環配管32。藥液供給系統還包括將藥液槽31內的藥液送至循環配管32的泵34、將顆粒(particle)等異物從藥液中除去的過濾器(filter)35、與通過對藥液進行加熱來對藥液槽31內的藥液的溫度進行調整的加熱器33。泵34、過濾器35、以及加熱器33插裝於循環配管32。The chemical liquid supply system includes a chemical liquid tank 31 that stores the chemical liquid supplied to the substrate W, and a circulation pipe 32 that forms an annular circulation path that circulates the chemical liquid in the chemical liquid tank 31. The chemical liquid supply system further includes a pump 34 that sends the chemical liquid in the chemical liquid tank 31 to the circulation pipe 32, a filter 35 that removes foreign matter such as particles from the chemical liquid, and A heater 33 that heats and adjusts the temperature of the chemical solution in the chemical solution tank 31. The pump 34, the filter 35, and the heater 33 are inserted into the circulation pipe 32.
泵34始終將藥液槽31內的藥液送至循環配管32內。藥液供給系統也可以具備通過使藥液槽31內的氣壓上升而將藥液槽31內的藥液擠出至循環配管32的加壓裝置來代替泵34。泵34以及加壓裝置均是將藥液槽31內的藥液送至循環配管32的送液裝置的一例。The pump 34 always sends the chemical solution in the chemical solution tank 31 into the circulation pipe 32. The medicinal solution supply system may be provided with a pressurizing device that presses the medicinal solution in the medicinal solution tank 31 to the circulation pipe 32 by increasing the air pressure in the medicinal solution tank 31 instead of the pump 34. Both the pump 34 and the pressurizing device are examples of a liquid feeding device that sends the chemical liquid in the chemical liquid tank 31 to the circulation pipe 32.
循環配管32的上游端以及下游端連接於藥液槽31。藥液被從藥液槽31送至循環配管32的上游端,並從循環配管32的下游端返回藥液槽31。由此,藥液槽31內的藥液在循環路徑中循環。在藥液在循環路徑中循環期間,藥液中所含的異物被過濾器35除去,並且藥液被加熱器33加熱。由此,藥液槽31內的藥液被維持在高於室溫的固定的溫度。An upstream end and a downstream end of the circulation pipe 32 are connected to the chemical liquid tank 31. The medicinal solution is sent from the medicinal solution tank 31 to the upstream end of the circulation pipe 32, and returns to the medicinal solution tank 31 from the downstream end of the circulation pipe 32. Thereby, the chemical liquid in the chemical liquid tank 31 circulates in a circulation path. During the circulation of the medicinal solution in the circulation path, the foreign matter contained in the medicinal solution is removed by the filter 35, and the medicinal solution is heated by the heater 33. Accordingly, the chemical solution in the chemical solution tank 31 is maintained at a fixed temperature higher than room temperature.
分別對應於相同的塔中所包括的三個處理單元2的三個藥液配管22連接於相同的循環配管32。因此,相同的藥液槽31內的藥液被供給至相同的塔所包括的三個處理單元2。流量計23、流量調整閥24、開閉閥25、以及溫度感測器26插裝於各自的藥液配管22。Three chemical liquid pipes 22 respectively corresponding to the three processing units 2 included in the same tower are connected to the same circulation pipe 32. Therefore, the chemical liquid in the same chemical liquid tank 31 is supplied to the three processing units 2 included in the same tower. The flow meter 23, the flow adjustment valve 24, the on-off valve 25, and the temperature sensor 26 are inserted into the respective chemical liquid pipes 22.
經由藥液配管22而被供給至藥液噴嘴21的藥液的流量由流量調整閥24進行變更。對藥液噴嘴21的藥液的供給以及供給停止的切換由開閉閥25進行。當開閉閥25打開時,藥液以與流量調整閥24的開度相對應的流量供給至藥液噴嘴21。經由藥液配管22而被供給至藥液噴嘴21的藥液的流量由流量計23進行檢測。藥液配管22內的藥液的溫度由溫度感測器26進行檢測。流量計23以及溫度感測器26的檢測值被輸入至控制裝置3。The flow rate of the chemical solution supplied to the chemical solution nozzle 21 through the chemical solution pipe 22 is changed by the flow rate adjustment valve 24. The switching of the supply and the stop of the chemical solution to the chemical solution nozzle 21 is performed by the on-off valve 25. When the on-off valve 25 is opened, the chemical solution is supplied to the chemical solution nozzle 21 at a flow rate corresponding to the opening degree of the flow rate adjustment valve 24. The flow rate of the chemical solution supplied to the chemical solution nozzle 21 through the chemical solution pipe 22 is detected by the flow meter 23. The temperature of the chemical solution in the chemical solution pipe 22 is detected by the temperature sensor 26. The detection values of the flow meter 23 and the temperature sensor 26 are input to the control device 3.
圖4是表示基板處理裝置1的電氣構成的框圖。FIG. 4 is a block diagram showing the electrical configuration of the substrate processing apparatus 1.
控制裝置3包括電腦本體41、以及連接於電腦本體41的周邊裝置44。電腦本體41包括執行各種命令的中央處理器(central processing unit,CPU)42(中央處理裝置)、以及記憶資訊的主記憶裝置43。周邊裝置44包括記憶程式P等資訊的輔助記憶裝置45、從可移動介質(removable media)M讀取資訊的讀取裝置46、以及與主機電腦HC等其他裝置進行通信的通信裝置47。The control device 3 includes a computer body 41 and a peripheral device 44 connected to the computer body 41. The computer body 41 includes a central processing unit (CPU) 42 (central processing device) that executes various commands, and a main memory device 43 that stores information. The peripheral device 44 includes an auxiliary memory device 45 that stores information such as a program P, a reading device 46 that reads information from a removable media M, and a communication device 47 that communicates with other devices such as a host computer HC.
控制裝置3與輸入裝置48及顯示裝置49連接。輸入裝置48是在使用者或維護負責人等操作者將資訊輸入至基板處理裝置1時被操作。資訊顯示在顯示裝置49的畫面上。輸入裝置48既可以是鍵盤、指向裝置(pointing device)及觸控面板中的任一者,也可以是這些以外的裝置。也可以將兼作輸入裝置48及顯示裝置49的觸控面板顯示器設置在基板處理裝置1中。The control device 3 is connected to an input device 48 and a display device 49. The input device 48 is operated when an operator, such as a user or a maintenance person, inputs information into the substrate processing apparatus 1. The information is displayed on the screen of the display device 49. The input device 48 may be any of a keyboard, a pointing device, and a touch panel, or may be a device other than these. A touch panel display that doubles as the input device 48 and the display device 49 may be provided in the substrate processing apparatus 1.
CPU 42執行輔助記憶裝置45中所記憶的程式P。輔助記憶裝置45內的程式P既可以預先安裝在控制裝置3中,也可以通過讀取裝置46從可移動介質M發送至輔助記憶裝置45,還可以從主機電腦HC等外部裝置通過通信裝置47發送至輔助記憶裝置45。The CPU 42 executes a program P stored in the auxiliary memory device 45. The program P in the auxiliary memory device 45 may be installed in the control device 3 in advance, or may be transmitted from the removable medium M to the auxiliary memory device 45 through the reading device 46, or may be transmitted from an external device such as the host computer HC through the communication device 47. Send to auxiliary memory device 45.
輔助記憶裝置45及可移動介質M是即使沒有被供電,也保持記憶的非揮發性記憶體。輔助記憶裝置45例如是硬碟驅動器等磁性記憶裝置。可移動介質M例如是密閉磁碟(compact disk)等光碟或記憶卡等半導體記憶體。可移動介質M是記錄有程式P的電腦可讀取的記錄介質的一例。The auxiliary memory device 45 and the removable medium M are non-volatile memories that retain memory even when power is not supplied. The auxiliary memory device 45 is, for example, a magnetic memory device such as a hard disk drive. The removable medium M is, for example, an optical disc such as a compact disk or a semiconductor memory such as a memory card. The removable medium M is an example of a computer-readable recording medium on which the program P is recorded.
輔助記憶裝置45記憶有多個方案。方案是規定基板W的處理內容、處理條件及處理順序的資訊。方案中包含後述的設定溫度。多個方案在基板W的處理內容、處理條件及處理順序中的至少一者上互不相同。控制裝置3是以按照通過主機電腦HC而指定的方案(recipe)處理基板W的方式來控制基板處理裝置1。以下各步驟是通過由控制裝置3控制基板處理裝置1來執行。換句話說,控制裝置3被編寫成執行以下各步驟。The auxiliary memory device 45 memorizes a plurality of schemes. The plan is information specifying the processing content, processing conditions, and processing order of the substrate W. The plan includes a set temperature described later. The plurality of schemes are different from each other in at least one of processing content, processing conditions, and processing order of the substrate W. The control device 3 controls the substrate processing device 1 so that the substrate W is processed according to a recipe specified by the host computer HC. The following steps are performed by controlling the substrate processing apparatus 1 by the control apparatus 3. In other words, the control device 3 is programmed to perform the following steps.
圖5是用以對由基板處理裝置1所執行的基板W的處理的一例進行說明的步驟圖。FIG. 5 is a flowchart illustrating an example of processing of the substrate W performed by the substrate processing apparatus 1.
基板W的處理的具體例是將磷酸供給至露出氮化矽膜與氧化矽膜的基板W(矽晶圓)的表面(器件形成面),並選擇性地對氮化矽膜進行蝕刻的選擇蝕刻。在此情況下,作為藥液的一例的磷酸(嚴格來說是磷酸水溶液)由加熱器33(參照圖3)維持在其濃度下的沸點。基板W的處理既可以是使用磷酸以外的蝕刻液的選擇蝕刻,也可以是清洗等選擇蝕刻以外的處理。A specific example of the processing of the substrate W is a selection of supplying phosphoric acid to the surface (device formation surface) of the substrate W (silicon wafer) exposing the silicon nitride film and the silicon oxide film, and selectively etching the silicon nitride film. Etching. In this case, phosphoric acid (strictly, an aqueous phosphoric acid solution), which is an example of a chemical solution, is maintained at its concentration boiling point by the heater 33 (see FIG. 3). The substrate W may be processed by selective etching using an etchant other than phosphoric acid, or may be processed other than selective etching such as cleaning.
當利用基板處理裝置1處理基板W時,進行將基板W搬入至腔室6內的搬入步驟(圖5的步驟S1)。When the substrate W is processed by the substrate processing apparatus 1, a carrying-in step of carrying the substrate W into the chamber 6 is performed (step S1 in FIG. 5).
具體來說,在藥液噴嘴21從基板W的上方退避,杯體14位於下位置的狀態下,中心機器人CR(參照圖1)一面利用手部支撐基板W,一面使手部進入至腔室6內。然後,中心機器人CR在基板W的表面朝向上方的狀態下將手部上的基板W放置在自旋夾頭10上。自旋馬達13在利用夾頭銷11握持基板W之後,使基板W開始旋轉。中心機器人CR在將基板W放置在自旋夾頭10上之後,使手部從腔室6的內部退避。Specifically, in a state where the liquid medicine nozzle 21 is retracted from above the substrate W and the cup 14 is in a lower position, the center robot CR (see FIG. 1) supports the substrate W with the hand while allowing the hand to enter the chamber. 6 within. Then, the center robot CR places the substrate W on the hand on the spin chuck 10 with the surface of the substrate W facing upward. After the spin motor 13 holds the substrate W with the chuck pin 11, the substrate W starts to rotate. After the center robot CR places the substrate W on the spin chuck 10, the center robot CR retracts the hand from the inside of the chamber 6.
其次,進行藥液供給步驟,將作為藥液的一例的磷酸供給至基板W(圖5的步驟S2)。Next, a chemical solution supply step is performed, and phosphoric acid as an example of the chemical solution is supplied to the substrate W (step S2 in FIG. 5).
具體來說,噴嘴移動單元27使藥液噴嘴21移動至處理位置,杯體升降單元15使杯體14上升至上位置為止。然後,打開開閉閥25,藥液噴嘴21開始噴出磷酸。在藥液噴嘴21噴出磷酸時,噴嘴移動單元27既可使藥液噴嘴21在中央處理位置與外周處理位置之間移動,也可以磷酸的著液位置位於基板W的上表面中央部的方式使藥液噴嘴21靜止,在所述中央處理位置,從藥液噴嘴21噴出的磷酸附著在基板W的上表面中央部,在所述外周處理位置,從藥液噴嘴21噴出的磷酸附著在基板W的上表面外周部。Specifically, the nozzle moving unit 27 moves the chemical liquid nozzle 21 to the processing position, and the cup lifting unit 15 raises the cup 14 to the upper position. Then, the on-off valve 25 is opened, and the chemical liquid nozzle 21 starts to emit phosphoric acid. When phosphoric acid is sprayed from the chemical liquid nozzle 21, the nozzle moving unit 27 may move the chemical liquid nozzle 21 between the central processing position and the peripheral processing position, or may use the phosphoric acid injection position at the center of the upper surface of the substrate W. The chemical liquid nozzle 21 is stationary. At the central processing position, phosphoric acid sprayed from the chemical liquid nozzle 21 is adhered to the center portion of the upper surface of the substrate W. At the peripheral processing position, phosphoric acid sprayed from the chemical liquid nozzle 21 is adhered to the substrate W. Peripheral surface of the upper surface.
從藥液噴嘴21噴出的磷酸附著在基板W的上表面之後,沿正在旋轉的基板W的上表面向外側流動。由此,形成覆蓋基板W的上表面整個區域的磷酸的液膜,對基板W的上表面整個區域供給磷酸。尤其是當噴嘴移動單元27使藥液噴嘴21在中央處理位置與外周處理位置之間移動時,會在磷酸的著液位置上對基板W的上表面整個區域進行掃描,因此將磷酸均勻地供給至基板W的上表面整個區域。由此,對基板W的上表面均勻地進行處理。當打開開閉閥25之後經過規定時間時,關閉開閉閥25。之後,噴嘴移動單元27使藥液噴嘴21移動至退避位置。After the phosphoric acid ejected from the chemical solution nozzle 21 adheres to the upper surface of the substrate W, it flows outward along the upper surface of the substrate W being rotated. As a result, a liquid film of phosphoric acid covering the entire region of the upper surface of the substrate W is formed, and phosphoric acid is supplied to the entire region of the upper surface of the substrate W. Especially when the nozzle moving unit 27 moves the chemical liquid nozzle 21 between the central processing position and the peripheral processing position, the entire area of the upper surface of the substrate W is scanned at the position where the phosphoric acid is injected, so the phosphoric acid is uniformly supplied. To the entire area of the upper surface of the substrate W. Thereby, the upper surface of the substrate W is processed uniformly. When a predetermined time elapses after the on-off valve 25 is opened, the on-off valve 25 is closed. Thereafter, the nozzle moving unit 27 moves the chemical liquid nozzle 21 to the retreat position.
其次,進行沖洗液供給步驟,將作為沖洗液的一例的純水供給至基板W的上表面(圖5的步驟S3)。Next, a washing liquid supply step is performed, and pure water as an example of the washing liquid is supplied to the upper surface of the substrate W (step S3 in FIG. 5).
具體來說,打開沖洗液閥18,沖洗液噴嘴16開始噴出純水。附著在基板W的上表面的純水沿正在旋轉的基板W的上表面向外側流動。基板W上的磷酸是利用從沖洗液噴嘴16噴出的純水來沖洗。由此,形成覆蓋基板W的上表面整個區域的純水的液膜。當打開沖洗液閥18之後經過規定時間時,關閉沖洗液閥18,停止噴出純水。Specifically, the flushing liquid valve 18 is opened, and the flushing liquid nozzle 16 starts to spray pure water. Pure water adhering to the upper surface of the substrate W flows outward along the upper surface of the substrate W being rotated. The phosphoric acid on the substrate W is rinsed with pure water sprayed from the rinse liquid nozzle 16. Thereby, a liquid film of pure water covering the entire area of the upper surface of the substrate W is formed. When a predetermined time elapses after the flushing liquid valve 18 is opened, the flushing liquid valve 18 is closed to stop the ejection of pure water.
其次,進行乾燥步驟,通過基板W的旋轉而使基板W乾燥(圖5的步驟S4)。Next, a drying step is performed, and the substrate W is dried by the rotation of the substrate W (step S4 in FIG. 5).
具體來說,自旋馬達13使基板W沿旋轉方向加速,從而使基板W以大於藥液供給步驟及沖洗液供給步驟中的基板W的旋轉速度的高旋轉速度(例如數千rpm)旋轉。由此,將液體從基板W去除,使基板W乾燥。當基板W開始高速旋轉後經過規定時間時,自旋馬達13停止旋轉。由此,基板W停止旋轉。Specifically, the spin motor 13 accelerates the substrate W in the rotation direction, and thereby rotates the substrate W at a high rotation speed (for example, thousands of rpm) that is higher than the rotation speed of the substrate W in the chemical solution supply step and the rinse solution supply step. Thereby, the liquid is removed from the substrate W, and the substrate W is dried. When a predetermined time elapses after the substrate W starts to rotate at a high speed, the spin motor 13 stops rotating. As a result, the substrate W stops rotating.
其次,進行搬出步驟,從腔室6搬出基板W(圖5的步驟S5)。Next, a carrying-out step is performed, and the substrate W is carried out from the chamber 6 (step S5 in FIG. 5).
具體來說,杯體升降單元15使杯體14下降至下位置為止。然後,中心機器人CR(參照圖1)使手部進入至腔室6內。中心機器人CR在多個夾頭銷11解除對基板W的握持之後,利用手部支撐自旋夾頭10上的基板W。之後,中心機器人CR一面利用手部支撐基板W,一面使手部從腔室6的內部退避。由此,從腔室6搬出處理完畢的基板W。Specifically, the cup lifting unit 15 lowers the cup 14 to a lower position. Then, the center robot CR (see FIG. 1) causes the hand to enter the chamber 6. The center robot CR supports the substrate W on the spin chuck 10 by hand after the plurality of chuck pins 11 release the grip of the substrate W. After that, the center robot CR retracts the hand from the inside of the chamber 6 while supporting the substrate W with the hand. Thereby, the processed substrate W is carried out from the chamber 6.
圖6是表示控制裝置3的功能塊的框圖。表1是表示控制裝置3中所記憶的開度決定資料的一例的表。圖6中所示的資訊獲取部51、加熱執行部52、開度決定部53、開度設定部54、以及處理液供給部55是通過由CPU 42執行安裝於控制裝置3中的程式P來實現的功能塊。FIG. 6 is a block diagram showing functional blocks of the control device 3. Table 1 is a table showing an example of the opening degree determination data stored in the control device 3. The information acquisition section 51, the heating execution section 52, the opening degree determination section 53, the opening degree setting section 54, and the processing liquid supply section 55 shown in FIG. 6 are executed by the CPU 42 executing a program P installed in the control device 3. Implemented function blocks.
控制裝置3包括獲取輸入至基板處理裝置1中的資訊的資訊獲取部51。由資訊獲取部51所獲取的資訊既可以是從主機電腦HC等外部裝置輸入至基板處理裝置1的資訊,也可以是由操作者經由輸入裝置48而輸入至基板處理裝置1的資訊。資訊獲取部51所獲取的資訊中包含後述的加熱溫度以及設定溫度。The control device 3 includes an information acquisition unit 51 that acquires information input to the substrate processing apparatus 1. The information acquired by the information acquisition unit 51 may be information input to the substrate processing apparatus 1 from an external device such as a host computer HC, or may be information input to the substrate processing apparatus 1 by an operator via the input device 48. The information acquired by the information acquisition unit 51 includes a heating temperature and a set temperature described later.
控制裝置3包括使加熱器33以加熱溫度對藥液進行加熱的加熱執行部52。加熱溫度是由加熱器進行了加熱的藥液的溫度的目標值。加熱溫度例如是在主機電腦HC指定方案之前輸入至基板處理裝置1。加熱執行部52例如從收容有應處理的基板W的載體C被搬送至基板處理裝置1之前,一直使加熱器33以加熱溫度對藥液進行加熱。因此,當載體C被搬送至基板處理裝置1,則能夠立刻開始基板W的搬送以及處理。The control device 3 includes a heating execution unit 52 that causes the heater 33 to heat the chemical solution at a heating temperature. The heating temperature is a target value of the temperature of the chemical solution heated by the heater. The heating temperature is input to the substrate processing apparatus 1 before the host computer HC designates a scheme, for example. The heating execution unit 52 causes the heater 33 to heat the chemical solution at a heating temperature until the carrier C containing the substrate W to be processed is transferred to the substrate processing apparatus 1, for example. Therefore, when the carrier C is transferred to the substrate processing apparatus 1, the transfer and processing of the substrate W can be started immediately.
控制裝置3包括多組開度決定部53以及開度設定部54、與處理液供給部55。控制裝置3將多個開度決定資料記憶於輔助記憶裝置45中。多個開度決定資料分別與多個處理單元2相對應。同樣地,多組開度決定部53以及開度設定部54分別與多個處理單元2相對應。即,專用的開度設定資料、開度決定部53、以及開度設定部54針對每個處理單元2而設置。The control device 3 includes a plurality of sets of opening degree determination sections 53, opening degree setting sections 54, and a processing liquid supply section 55. The control device 3 stores a plurality of opening degree determination data in the auxiliary storage device 45. The plurality of opening degree determination data respectively correspond to the plurality of processing units 2. Similarly, a plurality of sets of opening degree determination unit 53 and opening degree setting unit 54 respectively correspond to a plurality of processing units 2. That is, the dedicated opening degree setting data, the opening degree determining unit 53, and the opening degree setting unit 54 are provided for each processing unit 2.
開度決定資料是對加熱溫度、噴出溫度、以及供給流量的關係進行規定的資料。加熱溫度是由加熱器33進行了加熱的藥液的溫度的目標值。噴出溫度是從藥液噴嘴21噴出時的藥液的實際的溫度。供給流量是以加熱溫度被供給至藥液配管22的藥液以噴出溫度從藥液噴嘴21噴出時被供給至藥液配管22的藥液的實際的流量。流量調整閥24的開度與供給至藥液配管22的藥液的流量成正比例的關係。因此,開度決定資料也可以說是對加熱溫度、噴出溫度、以及開度的關係進行規定的資料。The opening degree determination data is data that defines the relationship between the heating temperature, the ejection temperature, and the supply flow rate. The heating temperature is a target value of the temperature of the chemical solution heated by the heater 33. The discharge temperature is the actual temperature of the chemical solution when it is discharged from the chemical solution nozzle 21. The supply flow rate is the actual flow rate of the chemical solution supplied to the chemical solution pipe 22 when the chemical solution is supplied to the chemical solution pipe 22 at the heating temperature at the discharge temperature from the chemical solution nozzle 21. The opening degree of the flow rate adjustment valve 24 is proportional to the flow rate of the chemical solution supplied to the chemical solution pipe 22. Therefore, the degree-of-opening determination data can also be said to define the relationship between the heating temperature, the discharge temperature, and the degree of opening.
從藥液噴嘴21噴出時的藥液的溫度的目標值,即設定溫度由資訊獲取部51獲取。流量調整閥24的開度的目標值,即,供給至藥液配管22的藥液的流量的目標值是基於開度決定資料、加熱溫度、與設定溫度而決定。將流量調整閥24的開度的目標值定義為目標開度。開度決定資料既可以是對加熱溫度、噴出溫度、以及目標開度的多個組合進行規定的矩陣(matrix),也可以是根據加熱溫度以及噴出溫度計算目標開度的計算式。The target value of the temperature of the medicinal solution when ejected from the medicinal solution nozzle 21, that is, the set temperature is acquired by the information acquisition unit 51. The target value of the opening degree of the flow rate adjustment valve 24, that is, the target value of the flow rate of the chemical solution supplied to the chemical solution pipe 22 is determined based on the opening degree determination data, the heating temperature, and the set temperature. A target value of the opening degree of the flow rate adjustment valve 24 is defined as a target opening degree. The opening degree determination data may be a matrix that defines a plurality of combinations of the heating temperature, the ejection temperature, and the target opening degree, or may be a calculation formula that calculates the target opening degree based on the heating temperature and the ejection temperature.
表1示出了開度決定資料為矩陣的示例。在表1中,Thx表示加熱溫度,Tdy表示噴出溫度,θxy表示目標開度(x以及y表示正整數)。左端的列包含多個加熱溫度。上端的行包含多個噴出溫度。當對加熱溫度以及噴出溫度各確定一個時,會確定出與它們相對應的一個目標開度。在左端的列中不包含資訊獲取部51所獲取的加熱溫度的情況下,從左端的列選擇最接近的值即可。同樣地,在上端的行中不包含資訊獲取部51所獲取的噴出溫度的情況下,從上端的行選擇最接近的值即可。 [表1]
開度決定部53基於開度決定資料與資訊獲取部51所獲取的加熱溫度以及設定溫度來決定與目標流量相對應的目標開度,所述目標流量使噴出溫度與設定溫度一致或接近。目標流量是供給至藥液配管22的藥液的流量的目標值。開度設定部54將流量調整閥24的開度設定為目標開度。處理液供給部55借助對開閉閥25進行開閉,在此狀態下將藥液供給至藥液噴嘴21。關於流量調整閥24的具體的動作將後述。The opening degree determination unit 53 determines a target opening degree corresponding to a target flow rate based on the opening degree determination data and the heating temperature and the set temperature acquired by the information acquisition unit 51, the target flow rate making the ejection temperature coincide with or close to the set temperature. The target flow rate is a target value of the flow rate of the medicinal solution supplied to the medicinal solution pipe 22. The opening degree setting unit 54 sets the opening degree of the flow rate adjustment valve 24 to a target opening degree. The processing liquid supply unit 55 opens and closes the on-off valve 25 and supplies the chemical liquid to the chemical liquid nozzle 21 in this state. The specific operation of the flow rate adjustment valve 24 will be described later.
圖7是表示從開始對藥液加熱到將經加熱的藥液供給至基板W為止的流程的一例的步驟圖。FIG. 7 is a step diagram showing an example of a flow from the start of heating the chemical solution to the supply of the heated chemical solution to the substrate W. FIG.
在開始加熱應供給至基板W的藥液時,由控制裝置3的資訊獲取部51獲取表示由加熱器33進行了加熱的藥液的溫度的目標值的加熱溫度(圖7的步驟S11)。之後,控制裝置3的加熱執行部52使加熱器33以加熱溫度對藥液進行加熱(圖7的步驟S12)。由此,開始藥液的加熱,藥液槽31內的藥液的溫度上升。當開始藥液的加熱後經過一定程度的時間時,藥液槽31內的藥液以加熱溫度或與所述加熱溫度幾乎相同的溫度得到穩定。When the chemical solution to be supplied to the substrate W is started to be heated, the information acquisition unit 51 of the control device 3 acquires a heating temperature indicating a target value of the temperature of the chemical solution heated by the heater 33 (step S11 in FIG. 7). Thereafter, the heating execution unit 52 of the control device 3 causes the heater 33 to heat the chemical solution at the heating temperature (step S12 in FIG. 7). Thereby, heating of the medicinal solution is started, and the temperature of the medicinal solution in the medicinal solution tank 31 rises. When a certain amount of time elapses after the heating of the medicinal solution is started, the medicinal solution in the medicinal solution tank 31 is stabilized at a heating temperature or a temperature almost the same as the heating temperature.
應由基板處理裝置1進行處理的基板W在被收容於載體C中的狀態下被搬送至裝載埠LP(圖7的步驟S13)。當載體C被搬送至裝載埠LP時,指定應適用於載體C內的基板W的方案的信號從主機電腦HC輸入至控制裝置3(圖7的步驟S14)。由此,由控制裝置3的資訊獲取部51獲取從藥液噴嘴21噴出時的藥液的溫度的目標值,即比加熱溫度低的設定溫度(圖7的步驟S15)。The substrate W to be processed by the substrate processing apparatus 1 is transported to the loading port LP in a state of being stored in the carrier C (step S13 in FIG. 7). When the carrier C is transferred to the loading port LP, a signal designating a scheme to be applied to the substrate W in the carrier C is input from the host computer HC to the control device 3 (step S14 in FIG. 7). Thereby, the information acquisition unit 51 of the control device 3 acquires a target value of the temperature of the chemical solution when it is ejected from the chemical solution nozzle 21, that is, a set temperature lower than the heating temperature (step S15 in FIG. 7).
控制裝置3的開度決定部53基於控制裝置3中所記憶的開度決定資料與資訊獲取部51所獲取的加熱溫度以及設定溫度來決定與目標流量相對應的目標開度,所述目標流量使噴出溫度與設定溫度一致或接近(圖7的步驟S16)。之後,開度設定部54將流量調整閥24的開度設定為目標開度(圖7的步驟S17)。處理液供給部55在此狀態下經由藥液配管22將藥液供給至藥液噴嘴21(圖7的步驟S18)。對藥液噴嘴21的藥液的供給,既可以是在將流量調整閥24的開度設定為目標開度之後開始,也可以在此之前開始。圖8以及圖9示出了後者。The opening degree determination unit 53 of the control device 3 determines the target opening degree corresponding to the target flow rate based on the opening degree determination data and the heating temperature and the set temperature acquired by the information acquisition unit 51 stored in the control device 3, and the target flow rate The discharge temperature is made equal to or close to the set temperature (step S16 in FIG. 7). After that, the opening degree setting unit 54 sets the opening degree of the flow rate adjustment valve 24 to the target opening degree (step S17 in FIG. 7). In this state, the treatment liquid supply unit 55 supplies the liquid medicine to the liquid medicine nozzle 21 via the liquid medicine pipe 22 (step S18 in FIG. 7). The supply of the chemical solution to the chemical solution nozzle 21 may be started after the opening degree of the flow rate adjustment valve 24 is set to the target opening degree, or may be started before that. The latter is shown in FIGS. 8 and 9.
圖8是表示供給至藥液噴嘴21的藥液的流量以及溫度的時間性變化的一例的圖表。圖9是表示供給至藥液噴嘴21的藥液的流量以及溫度的時間性變化的另一例的圖表。FIG. 8 is a graph showing an example of temporal changes in the flow rate and temperature of the chemical solution supplied to the chemical solution nozzle 21. FIG. 9 is a graph showing another example of temporal changes in the flow rate and temperature of the chemical solution supplied to the chemical solution nozzle 21.
在開始從藥液噴嘴21噴出藥液時,控制裝置3使流量調整閥24的開度增加至與由方案所指定的指定流量相對應的開度。與指定流量相對應的流量調整閥24的開度是比目標開度大的初始開度的一例。在將流量調整閥24的開度設定為與指定流量相對應的大小之後,控制裝置3打開開閉閥25,使藥液噴嘴21開始噴出藥液。When the chemical liquid is started to be ejected from the chemical liquid nozzle 21, the control device 3 increases the opening degree of the flow rate adjustment valve 24 to an opening degree corresponding to a specified flow rate specified by the plan. The opening degree of the flow rate adjustment valve 24 corresponding to the specified flow rate is an example of an initial opening degree that is larger than the target opening degree. After the opening degree of the flow rate adjustment valve 24 is set to a size corresponding to the specified flow rate, the control device 3 opens the on-off valve 25 to cause the chemical liquid nozzle 21 to start ejecting the chemical liquid.
在藥液的噴出開始之後,以使藥液以由方案所指定的指定流量從藥液噴嘴21噴出的方式,進行基於流量計23的檢測值來變更流量調整閥24的開度的流量回饋(feedback)控制。具體來說,控制裝置3基於流量計23的檢測值使流量調整閥24的開度增加以及減少。After the discharge of the medicinal solution is started, the flow rate of the opening of the flow adjustment valve 24 is changed based on the detection value of the flow meter 23 so that the medicinal solution is ejected from the medicinal solution nozzle 21 at a specified flow rate specified by the plan ( feedback) control. Specifically, the control device 3 increases and decreases the opening degree of the flow rate adjustment valve 24 based on the detection value of the flow meter 23.
如圖8所示,從藥液噴嘴21噴出的藥液的流量,即噴出流量自開閉閥25打開之後急劇增加,達到指定流量附近。之後,通過流量回饋控制噴出流量以指定流量或在指定流量附近得到穩定。另一方面,從藥液噴嘴21噴出時的藥液的溫度,即噴出溫度比流量的增加稍微延遲後開始急劇增加。As shown in FIG. 8, the flow rate of the chemical solution ejected from the chemical solution nozzle 21, that is, the ejection flow rate increases sharply after the on-off valve 25 is opened, and reaches a vicinity of a predetermined flow rate. After that, the discharge flow rate is controlled by the flow rate feedback to stabilize at or near the specified flow rate. On the other hand, the temperature of the medicinal solution when it is ejected from the medicinal solution nozzle 21, that is, the ejection temperature is slightly delayed from the increase in the flow rate, and then starts to increase sharply.
控制裝置3對基於溫度感測器26的檢測值而計算出的檢測溫度進行監視。當檢測溫度達到切換溫度時,控制裝置3以將檢測溫度限制於包含設定溫度的設定溫度範圍內的方式,進行基於溫度感測器26的檢測值來變更流量調整閥24的開度的溫度回饋控制。設定溫度例如是設定溫度範圍的中央值。只要是設定溫度範圍內的值,則設定溫度也可以不為設定溫度範圍的中央值。The control device 3 monitors the detected temperature calculated based on the detected value of the temperature sensor 26. When the detection temperature reaches the switching temperature, the control device 3 performs temperature feedback to change the opening degree of the flow rate adjustment valve 24 based on the detection value of the temperature sensor 26 so as to limit the detection temperature to a set temperature range including the set temperature. control. The set temperature is, for example, the middle value of the set temperature range. As long as it is a value within the set temperature range, the set temperature may not be the middle value of the set temperature range.
當開始溫度回饋控制時,控制裝置3使表示供給至藥液噴嘴21的藥液的流量的目標值的設定流量從指定流量減少至目標流量。具體來說,控制裝置3事先基於開度設定資料、加熱溫度與設定溫度,決定與目標流量相對應的目標開度,所述目標流量使噴出溫度與設定溫度一致或接近。當開始溫度回饋控制時,控制裝置3使流量調整閥24的開度減少並接近目標開度。之後,控制裝置3基於溫度感測器26的檢測值而使流量調整閥24的開度增減。When the temperature feedback control is started, the control device 3 reduces the set flow rate indicating the target value of the flow rate of the chemical solution supplied to the chemical solution nozzle 21 from the specified flow rate to the target flow rate. Specifically, the control device 3 determines a target opening degree corresponding to a target flow rate based on the opening degree setting data, the heating temperature, and the setting temperature in advance, and the target flow rate makes the ejection temperature coincide or be close to the set temperature. When the temperature feedback control is started, the control device 3 reduces the opening degree of the flow rate adjustment valve 24 and approaches the target opening degree. After that, the control device 3 increases or decreases the opening degree of the flow rate adjustment valve 24 based on the detection value of the temperature sensor 26.
圖8示出了如下示例,即當檢測溫度達到切換溫度時使噴出流量急劇減少,之後使噴出流量增加以及減少。檢測溫度在溫度回饋控制開始後限制於設定溫度範圍內。在溫度回饋控制的執行過程中,檢測溫度雖然在設定溫度範圍內增加以及減少,但其變動量隨時間的經過而減少。當開始溫度回饋控制後經過一定程度的時間時,檢測溫度以設定溫度範圍的中央值或在所述中央值的附近得到穩定。由此,與設定溫度相等或大致相等的溫度的藥液從藥液噴嘴21噴出。FIG. 8 shows an example in which the discharge flow rate is sharply reduced when the detected temperature reaches the switching temperature, and then the discharge flow rate is increased and decreased. The detected temperature is limited to the set temperature range after the temperature feedback control is started. During the execution of the temperature feedback control, although the detected temperature increases and decreases within the set temperature range, the amount of variation decreases with time. When a certain amount of time elapses after the temperature feedback control is started, the temperature is detected to be stable at or near a central value of a set temperature range. As a result, a chemical solution having a temperature equal to or substantially equal to the set temperature is ejected from the chemical solution nozzle 21.
圖8所示的示例中,對執行溫度回饋控制的情況進行了說明,但如圖9所示,控制裝置3也可以不執行溫度回饋控制。在圖9所示的示例中,與圖8所示的示例同樣地,最初將設定流量設定為指定流量,將流量調整閥24的開度設定為與指定流量相對應的值。之後,控制裝置3將流量調整閥24的開度變更為目標開度。將流量調整閥24的開度變更為目標開度的時機(timing)既可以是檢測溫度達到切換溫度時,也可以是從打開開閉閥25之後經過規定的時間時。在後者的情況下,在控制裝置3中配備計時器(timer)。在此情況下,不需要溫度感測器26。In the example shown in FIG. 8, the case where the temperature feedback control is performed has been described, but as shown in FIG. 9, the control device 3 may not perform the temperature feedback control. In the example shown in FIG. 9, similarly to the example shown in FIG. 8, the set flow rate is initially set to the specified flow rate, and the opening degree of the flow rate adjustment valve 24 is set to a value corresponding to the specified flow rate. After that, the control device 3 changes the opening degree of the flow rate adjustment valve 24 to the target opening degree. The timing of changing the opening degree of the flow rate adjustment valve 24 to the target opening degree may be when the detection temperature reaches the switching temperature, or when a predetermined time elapses after the on-off valve 25 is opened. In the latter case, a timer is provided in the control device 3. In this case, the temperature sensor 26 is not needed.
從藥液槽31開始到藥液噴嘴21為止的流路的長度有時因多個藥液噴嘴21而不同。在此情況下,直至供給至基板W為止所損失的藥液的熱量,因流路而不同。開度決定資料是針對每個藥液噴嘴21而設,流量調整閥24的開度的設定是針對每個藥液噴嘴21來執行。即,使噴出溫度與設定溫度一致或接近的控制是針對每個藥液噴嘴21來執行。由此,能夠減輕多個藥液噴嘴21中噴出溫度的偏差,能夠降低利用不同的處理單元2所處理的多枚基板W間的處理品質之差。The length of the flow path from the medicinal solution tank 31 to the medicinal solution nozzle 21 may differ depending on the plurality of medicinal solution nozzles 21. In this case, the amount of heat of the chemical solution lost until it is supplied to the substrate W varies depending on the flow path. The opening degree determination data is provided for each chemical liquid nozzle 21, and the setting of the opening degree of the flow rate adjustment valve 24 is performed for each chemical liquid nozzle 21. That is, the control for making the discharge temperature coincide or be close to the set temperature is performed for each of the chemical liquid nozzles 21. This makes it possible to reduce variations in the discharge temperature of the plurality of chemical liquid nozzles 21 and reduce the difference in processing quality among the plurality of substrates W processed by the different processing units 2.
如上所述在第1實施形態中,由加熱器33以加熱溫度進行了加熱的藥液經由藥液配管22而被供給至藥液噴嘴21。表示從藥液噴嘴21噴出時的藥液的溫度的噴出溫度不僅相應於供給至藥液配管22的藥液的溫度而發生變化,也相應於供給至藥液配管22的藥液的流量而發生變化。即,當藥液的供給流量減少時,噴出溫度下降,當藥液的供給流量增加時,噴出溫度上升。這是因為:熱損失量與藥液的供給流量無關而大致固定,與此相對,藥液的熱容量相應於藥液的供給流量而發生變化。As described above, in the first embodiment, the chemical solution heated at the heating temperature by the heater 33 is supplied to the chemical solution nozzle 21 through the chemical solution pipe 22. The ejection temperature, which indicates the temperature of the chemical solution when ejected from the chemical solution nozzle 21, varies not only in accordance with the temperature of the chemical solution supplied to the chemical solution pipe 22, but also in accordance with the flow rate of the chemical solution supplied to the chemical solution pipe 22. Variety. That is, when the supply flow rate of the chemical solution decreases, the discharge temperature decreases, and when the supply flow rate of the chemical solution increases, the discharge temperature increases. This is because the amount of heat loss is approximately constant regardless of the supply flow rate of the medicinal solution, while the heat capacity of the medicinal solution changes in accordance with the supply flow rate of the medicinal solution.
即使加熱溫度相同,如果藥液的供給流量不同,則噴出溫度也不同。對這些關係進行規定的開度決定資料記憶於控制裝置3中。關於藥液的供給流量,是以噴出溫度與設定溫度一致或接近的方式基於開度決定資料而設定。即,對藥液的供給流量進行規定的流量調整閥24的開度被設定為與使噴出溫度與設定溫度一致或接近的目標流量相對應的目標開度。在此狀態下,具有加熱溫度的藥液被供給至藥液配管22。由此,具有設定溫度或與所述設定溫度幾乎相同的溫度的藥液從藥液噴嘴21噴出。Even if the heating temperature is the same, if the supply flow rate of the chemical solution is different, the discharge temperature is also different. The degree-of-opening determination data that defines these relationships is stored in the control device 3. The supply flow rate of the medicinal solution is set based on the opening degree determination data so that the discharge temperature matches or approaches the set temperature. That is, the opening degree of the flow rate adjustment valve 24 that regulates the supply flow rate of the chemical solution is set to a target opening degree corresponding to a target flow rate at which the discharge temperature matches or approaches the set temperature. In this state, a chemical solution having a heating temperature is supplied to the chemical solution pipe 22. Thereby, a chemical liquid having a set temperature or a temperature almost the same as the set temperature is ejected from the chemical liquid nozzle 21.
如此,不僅恰當地對加熱器33的溫度進行管理,而且相應於加熱溫度以及設定溫度而恰當地對供給至藥液配管22以及藥液噴嘴21的藥液的流量,即,藥液的熱容量進行設定,因此,能夠以更高的精度對從藥液噴嘴21噴出時的藥液的溫度進行控制。由此,能夠減少想要的溫度與供給至基板W的藥液的實際的溫度之差。並且,如果改變流量調整閥24的開度,則能夠不改變加熱器33的溫度而變更供給至基板W的藥液的溫度。因此,與改變加熱器33的溫度的情況相比,能夠在短時間內變更藥液的溫度。In this way, not only the temperature of the heater 33 is properly managed, but also the flow rate of the chemical solution supplied to the chemical solution pipe 22 and the chemical solution nozzle 21, that is, the heat capacity of the chemical solution is appropriately adjusted in accordance with the heating temperature and the set temperature. The setting makes it possible to control the temperature of the chemical solution when ejected from the chemical solution nozzle 21 with higher accuracy. This makes it possible to reduce the difference between the desired temperature and the actual temperature of the chemical solution supplied to the substrate W. Furthermore, if the opening degree of the flow rate adjustment valve 24 is changed, the temperature of the chemical solution supplied to the substrate W can be changed without changing the temperature of the heater 33. Therefore, compared with the case where the temperature of the heater 33 is changed, the temperature of the chemical solution can be changed in a short time.
在第1實施形態中,在作為共用配管的一例的循環配管32內流動的藥液被供給至多個藥液配管22。因此,至少成分相等的藥液從多個藥液噴嘴21噴出。從多個藥液噴嘴21噴出的藥液被供給至不同的基板W。因此能夠將至少成分相等的藥液供給至不同的基板W,能夠降低多枚基板W間的處理的偏差。In the first embodiment, the medicinal solution flowing in the circulation pipe 32 as an example of the common piping is supplied to the plurality of medicinal solution pipes 22. Therefore, the chemical liquid having at least equal components is ejected from the plurality of chemical liquid nozzles 21. The chemical solution ejected from the plurality of chemical solution nozzles 21 is supplied to different substrates W. Therefore, it is possible to supply chemical liquids having at least equal components to different substrates W, and it is possible to reduce processing variations among the plurality of substrates W.
在第1實施形態中,控制裝置3的開度設定部54將流量調整閥24的開度設定為比目標開度大的初始開度。具體來說,控制裝置3的開度設定部54將流量調整閥24的開度設定為與由方案所指定的指定流量相對應的開度。在此狀態下,控制裝置3的處理液供給部55經由藥液配管22而將藥液供給至藥液噴嘴21。之後,控制裝置3的開度設定部54使流量調整閥24的開度從初始開度減少至目標開度。在此狀態下,控制裝置3的處理液供給部55經由藥液配管22而將藥液供給至藥液噴嘴21。In the first embodiment, the opening degree setting unit 54 of the control device 3 sets the opening degree of the flow rate adjustment valve 24 to an initial opening degree larger than the target opening degree. Specifically, the opening degree setting unit 54 of the control device 3 sets the opening degree of the flow rate adjustment valve 24 to an opening degree corresponding to a specified flow rate specified by a plan. In this state, the treatment liquid supply unit 55 of the control device 3 supplies the treatment liquid to the treatment liquid nozzle 21 through the treatment liquid pipe 22. Thereafter, the opening degree setting unit 54 of the control device 3 reduces the opening degree of the flow rate adjustment valve 24 from the initial opening degree to the target opening degree. In this state, the treatment liquid supply unit 55 of the control device 3 supplies the treatment liquid to the treatment liquid nozzle 21 through the treatment liquid pipe 22.
剛開始向藥液配管22以及藥液噴嘴21供給藥液時,藥液配管22以及藥液噴嘴21還處於冰冷狀態,因此熱損失量相對大。另一方面,當開始供給藥液後經過一定程度的時間時,藥液配管22以及藥液噴嘴21變暖,因此熱損失量減少。因此,當以相同的流量將相同溫度的藥液持續供給至藥液配管22以及藥液噴嘴21時,從藥液噴嘴21噴出時的藥液的溫度隨時間的經過而發生變化。When the medicinal solution pipe 22 and the medicinal solution nozzle 21 are first supplied with the medicinal solution, the medicinal solution pipe 22 and the medicinal solution nozzle 21 are still in an ice-cold state, and therefore the heat loss is relatively large. On the other hand, when a certain amount of time has elapsed after the start of the supply of the medicinal solution, the medicinal solution piping 22 and the medicinal solution nozzle 21 are warmed, so the amount of heat loss is reduced. Therefore, when the chemical solution of the same temperature is continuously supplied to the chemical solution pipe 22 and the chemical solution nozzle 21 at the same flow rate, the temperature of the chemical solution when ejected from the chemical solution nozzle 21 changes with the passage of time.
在第1實施形態中,使供給至藥液配管22以及藥液噴嘴21的藥液的流量隨時間的經過而減少。換句話說,藥液的供給開始時,以相對大的流量將藥液供給至藥液配管22以及藥液噴嘴21。然後,當藥液配管22以及藥液噴嘴21變暖時,則以相對小的流量將藥液供給至藥液配管22以及藥液噴嘴21。由此,能夠減少從藥液噴嘴21噴出時的藥液的溫度的變動量。In the first embodiment, the flow rate of the medicinal solution supplied to the medicinal solution pipe 22 and the medicinal solution nozzle 21 is reduced with time. In other words, when the supply of the medicinal solution is started, the medicinal solution is supplied to the medicinal solution pipe 22 and the medicinal solution nozzle 21 at a relatively large flow rate. Then, when the chemical solution pipe 22 and the chemical solution nozzle 21 are warmed, the chemical solution is supplied to the chemical solution pipe 22 and the chemical solution nozzle 21 at a relatively small flow rate. Accordingly, it is possible to reduce the amount of fluctuation in the temperature of the chemical solution when ejected from the chemical solution nozzle 21.
在第1實施形態中,由溫度感測器26檢測供給至基板W前的藥液的溫度。當由溫度感測器26所檢測出的藥液的溫度達到切換溫度時,即,當確認到藥液配管22以及藥液噴嘴21變暖時,控制裝置3的開度設定部54使流量調整閥24的開度減少至目標開度。因此,能夠防止儘管藥液配管22以及藥液噴嘴21變暖仍以相對大的流量將藥液持續供給至藥液配管22以及藥液噴嘴21這一情況。In the first embodiment, the temperature of the chemical solution before being supplied to the substrate W is detected by the temperature sensor 26. When the temperature of the medicinal solution detected by the temperature sensor 26 reaches the switching temperature, that is, when it is confirmed that the medicinal solution pipe 22 and the medicinal solution nozzle 21 are warmed, the opening degree setting unit 54 of the control device 3 adjusts the flow rate The opening degree of the valve 24 is reduced to the target opening degree. Therefore, it is possible to prevent the situation where the medicinal solution pipe 22 and the medicinal solution nozzle 21 are continuously supplied with the medicinal solution to the medicinal solution pipe 22 and the medicinal solution nozzle 21 at a relatively large flow rate despite the warming.
其次,對本發明的第2實施形態進行說明。Next, a second embodiment of the present invention will be described.
第2實施形態相對於第1實施形態主要的不同點在於:將朝向相同的基板W噴出同種的處理液的多個噴嘴設於相同的處理單元2。The second embodiment is different from the first embodiment mainly in that a plurality of nozzles that eject the same type of processing liquid toward the same substrate W are provided in the same processing unit 2.
以下的圖10~圖15中,對與前述圖1~圖9中所示的構成相同的構成標注與圖1等相同的參照符號並省略其說明。In the following FIGS. 10 to 15, the same components as those shown in the aforementioned FIGS. 1 to 9 are denoted by the same reference numerals as those in FIG. 1 and the like, and descriptions thereof are omitted.
圖10是水平地觀察本發明的第2實施形態的第1藥液噴嘴61以及第2藥液噴嘴62的示意圖。圖11是第1藥液噴嘴61以及第2藥液噴嘴62的示意性的平面圖。圖12是從圖10所示的箭頭XIII的方向觀察第1藥液噴嘴61以及第2藥液噴嘴62的示意圖。圖10~圖12示出了將第1藥液噴嘴61以及第2藥液噴嘴62配置於處理位置的狀態。FIG. 10 is a schematic view of the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 of the second embodiment of the present invention viewed horizontally. FIG. 11 is a schematic plan view of the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62. FIG. 12 is a schematic view of the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 viewed from a direction of an arrow XIII shown in FIG. 10. 10 to 12 show a state where the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 are arranged at the processing position.
如圖10所示,處理單元2包括:第1藥液噴嘴61,設有朝向基板W的上表面噴出藥液的第1噴出口61a;以及第2藥液噴嘴62,設有朝向基板W的上表面噴出藥液的多個第2噴出口62a。第1藥液噴嘴61以及第2藥液噴嘴62保持於噴嘴保持架(holder)60上。噴嘴移動單元通過使噴嘴保持架60移動而使第1藥液噴嘴61以及第2藥液噴嘴62在處理位置與退避位置之間移動。As shown in FIG. 10, the processing unit 2 includes a first chemical liquid nozzle 61 provided with a first ejection port 61 a that ejects a chemical liquid toward the upper surface of the substrate W, and a second chemical liquid nozzle 62 provided with a The plurality of second ejection ports 62a ejecting the chemical liquid on the upper surface. The first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 are held on a nozzle holder 60. The nozzle moving unit moves the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 between the processing position and the retreat position by moving the nozzle holder 60.
第1藥液噴嘴61包括:水平部61d,朝遠離噴嘴保持架60的方向水平延伸;垂下部61c,從水平部61d向下方延伸;以及噴出部61b,從垂下部61c向下方延伸,且比垂下部61c細。第2藥液噴嘴62包括:上水平部62d,朝遠離噴嘴保持架60的方向水平延伸;垂下部62c,從上水平部62d向下方延伸;以及下水平部62b,從垂下部62c向噴嘴轉動軸線A2水平延伸。The first liquid medicine nozzle 61 includes a horizontal portion 61d extending horizontally away from the nozzle holder 60, a lower portion 61c extending downward from the horizontal portion 61d, and a discharge portion 61b extending downward from the lower portion 61c, and is smaller than The lower part 61c is thin. The second chemical liquid nozzle 62 includes an upper horizontal portion 62d extending horizontally away from the nozzle holder 60, a lower portion 62c extending downward from the upper horizontal portion 62d, and a lower horizontal portion 62b rotating toward the nozzle from the lower vertical portion 62c. The axis A2 extends horizontally.
第1藥液噴嘴61的水平部61d與第2藥液噴嘴62的上水平部62d彼此平行,且沿水平的長度方向D3延伸。第1藥液噴嘴61在長度方向D3上比第2藥液噴嘴62短。如圖11所示,在第2藥液噴嘴62配置在處理位置時,第2藥液噴嘴62的垂下部62c在俯視時與基板W的中央部重疊,第2藥液噴嘴62的下水平部62b的外端部在俯視時與基板W的外周部重疊。The horizontal portion 61d of the first chemical liquid nozzle 61 and the upper horizontal portion 62d of the second chemical liquid nozzle 62 are parallel to each other and extend in the horizontal longitudinal direction D3. The first chemical liquid nozzle 61 is shorter than the second chemical liquid nozzle 62 in the longitudinal direction D3. As shown in FIG. 11, when the second chemical liquid nozzle 62 is disposed at the processing position, the vertical portion 62 c of the second chemical liquid nozzle 62 overlaps the central portion of the substrate W in a plan view, and the lower horizontal portion of the second chemical liquid nozzle 62 The outer end portion of 62b overlaps the outer peripheral portion of the substrate W in a plan view.
第2藥液噴嘴62的上水平部62d配置於第2藥液噴嘴62的下水平部62b的上方,在俯視時與下水平部62b重疊。如圖10所示,下水平部62b經由從上水平部62d向下方延伸的支架(bracket)63而支撐於上水平部62d。多個第2噴出口62a設於第2藥液噴嘴62的下水平部62b。多個第2噴出口62a沿與長度方向D3一致的下水平部62b的軸向排列。在第2藥液噴嘴62配置於處理位置時,最內側的第2噴出口62a位於比設於第1藥液噴嘴61的噴出部61b處的第1噴出口61a靠內側,即旋轉軸線A1側,最外側的第2噴出口62a位於比第1噴出口61a靠外側。The upper horizontal portion 62 d of the second chemical liquid nozzle 62 is disposed above the lower horizontal portion 62 b of the second chemical liquid nozzle 62 and overlaps the lower horizontal portion 62 b in a plan view. As shown in FIG. 10, the lower horizontal portion 62b is supported by the upper horizontal portion 62d via a bracket 63 extending downward from the upper horizontal portion 62d. The plurality of second ejection ports 62 a are provided in the lower horizontal portion 62 b of the second chemical liquid nozzle 62. The plurality of second ejection outlets 62a are aligned in the axial direction of the lower horizontal portion 62b that coincides with the longitudinal direction D3. When the second chemical liquid nozzle 62 is disposed at the processing position, the innermost second ejection outlet 62a is located closer to the inside than the first ejection outlet 61a provided at the ejection portion 61b of the first chemical liquid nozzle 61, that is, the rotation axis A1 side. The outermost second ejection port 62a is located further outward than the first ejection port 61a.
在第1藥液噴嘴61配置於處理位置時,第1藥液噴嘴61朝向基板W的上表面中央部噴出藥液。在第2藥液噴嘴62配置於處理位置時,第2藥液噴嘴62朝向除中央部之外的基板W的上表面上的多個著液位置噴出藥液。多個著液位置與旋轉軸線A1的距離互不相同。只要與旋轉軸線A1的距離互不相同,則多個著液位置也可在基板W的圓周方向(基板W的旋轉方向)上錯開。When the first chemical liquid nozzle 61 is disposed at the processing position, the first chemical liquid nozzle 61 ejects the chemical liquid toward the center of the upper surface of the substrate W. When the second chemical liquid nozzle 62 is disposed at the processing position, the second chemical liquid nozzle 62 ejects the chemical liquid toward a plurality of liquid injection positions on the upper surface of the substrate W other than the central portion. The distances between the plurality of impact positions and the rotation axis A1 are different from each other. As long as the distances from the rotation axis A1 are different from each other, the plurality of liquid-impacting positions may be shifted in the circumferential direction of the substrate W (the rotation direction of the substrate W).
如圖10以及圖12所示,第1噴出口61a沿第1噴出方向D1噴出藥液,所述第1噴出方向D1是從第1噴出口61a朝向基板W的上表面中央部的方向。第2噴出口62a沿第2噴出方向D2噴出藥液,所述第2噴出方向D2是從第2噴出口62a朝向基板W的上表面的方向。第1噴出方向D1是相對於基板W的上表面沿基板W的徑向傾斜的斜方向。第2噴出方向D2是相對於基板W的上表面沿基板W的圓周方向傾斜的斜方向。第1噴出方向D1以及第2噴出方向D2的至少一者也可以是相對於基板W的上表面垂直的鉛垂方向。As shown in FIG. 10 and FIG. 12, the first ejection port 61 a ejects the medicinal solution in a first ejection direction D1 which is a direction from the first ejection port 61 a toward the center of the upper surface of the substrate W. The second ejection port 62a ejects the chemical solution in a second ejection direction D2, which is a direction from the second ejection port 62a toward the upper surface of the substrate W. The first discharge direction D1 is an oblique direction that is inclined in the radial direction of the substrate W with respect to the upper surface of the substrate W. The second discharge direction D2 is an oblique direction that is inclined with respect to the upper surface of the substrate W in the circumferential direction of the substrate W. At least one of the first discharge direction D1 and the second discharge direction D2 may be a vertical direction perpendicular to the upper surface of the substrate W.
在自旋夾頭10使基板W旋轉時,從第1藥液噴嘴61的第1噴出口61a噴出的藥液附著於基板W的上表面中央部,並沿基板W的上表面流向外側。從第2藥液噴嘴62的多個第2噴出口62a噴出的藥液附著於基板W的上表面上的多個著液位置,並沿基板W的上表面流向外側。由此,形成覆蓋基板W的上表面整個區域的藥液的液膜,將藥液均勻地供給至基板W的上表面的各部。When the spin chuck 10 rotates the substrate W, the chemical solution ejected from the first ejection port 61 a of the first chemical solution nozzle 61 adheres to the center portion of the upper surface of the substrate W and flows outward along the upper surface of the substrate W. The chemical solution ejected from the plurality of second ejection ports 62 a of the second chemical solution nozzle 62 adheres to a plurality of liquid-impacting positions on the upper surface of the substrate W and flows outward along the upper surface of the substrate W. Thereby, a liquid film of the chemical solution covering the entire area of the upper surface of the substrate W is formed, and the chemical solution is uniformly supplied to each portion of the upper surface of the substrate W.
圖13是表示本發明的第2實施形態的藥液供給系統的示意圖。FIG. 13 is a schematic diagram showing a medicinal solution supply system according to a second embodiment of the present invention.
第1藥液噴嘴61連接於第1藥液配管64,第2藥液噴嘴62連接於第2藥液配管68。第1藥液配管64以及第2藥液配管68連接於循環配管32。因此,相同的藥液槽31內的藥液被供給至第1藥液噴嘴61以及第2藥液噴嘴62。第1流量計65、第1電動閥66以及第1溫度感測器67插裝於第1藥液配管64。同樣地,第2流量計69、第2電動閥70以及第2溫度感測器71插裝於第2藥液配管68。The first chemical liquid nozzle 61 is connected to a first chemical liquid pipe 64, and the second chemical liquid nozzle 62 is connected to a second chemical liquid pipe 68. The first chemical liquid pipe 64 and the second chemical liquid pipe 68 are connected to the circulation pipe 32. Therefore, the chemical solution in the same chemical solution tank 31 is supplied to the first chemical solution nozzle 61 and the second chemical solution nozzle 62. The first flow meter 65, the first electric valve 66, and the first temperature sensor 67 are inserted into the first chemical liquid pipe 64. Similarly, the second flowmeter 69, the second electric valve 70, and the second temperature sensor 71 are inserted into the second chemical liquid pipe 68.
第1電動閥66以及第2電動閥70均是進行液體的供給以及供給停止的切換與液體的供給流量的變更的電動閥。電動閥包括形成流路的閥體(valve body)、配置於流路內的閥元件(valve element)、與使閥元件移動的電動致動器(actuator)。閥元件可在全閉位置與全開位置之間移動,在所述全閉位置,電動閥通過閥元件與閥座的接觸而關閉,在所述全開位置,電動閥的開度最大。控制裝置3通過控制電動致動器來使閥元件位於從全閉位置到全開位置的範圍內的任意位置。Each of the first electric valve 66 and the second electric valve 70 is an electric valve that switches between the supply and stop of liquid supply and the change in the liquid supply flow rate. The electric valve includes a valve body forming a flow path, a valve element disposed in the flow path, and an electric actuator that moves the valve element. The valve element is movable between a fully-closed position and a fully-open position, in which the electric valve is closed by contact between the valve element and the valve seat, and in the fully-open position, the opening degree of the electric valve is maximized. The control device 3 controls the electric actuator to position the valve element at an arbitrary position within a range from the fully closed position to the fully open position.
處理單元2也可以具備開閉閥25與流量調整閥24來代替第1電動閥66。同樣地,處理單元2也可以具備開閉閥25與流量調整閥24來代替第2電動閥70。開閉閥25是會完全關閉的閥,流量調整閥24是不會完全關閉的閥。開閉閥25的閥元件可在閥元件接觸閥座的全閉位置與閥元件離開閥座的全開位置之間移動。流量調整閥24的閥元件可在閥元件離開閥座的低流量位置與閥元件離開閥座的高流量位置之間移動。閥元件配置於低流量位置時的流量調整閥24的開度小於閥元件配置於高流量位置時的流量調整閥24的開度。The processing unit 2 may include an on-off valve 25 and a flow rate adjustment valve 24 instead of the first electric valve 66. Similarly, the processing unit 2 may include an on-off valve 25 and a flow rate adjustment valve 24 instead of the second electric valve 70. The on-off valve 25 is a valve that is completely closed, and the flow adjustment valve 24 is a valve that is not completely closed. The valve element of the on-off valve 25 is movable between a fully closed position where the valve element contacts the valve seat and a fully open position where the valve element leaves the valve seat. The valve element of the flow adjustment valve 24 is movable between a low flow position where the valve element leaves the valve seat and a high flow position where the valve element leaves the valve seat. The opening degree of the flow adjustment valve 24 when the valve element is disposed at the low flow position is smaller than the opening degree of the flow adjustment valve 24 when the valve element is disposed at the high flow position.
第1溫度感測器67配置於第1流量計65以及第1電動閥66的下游。即,第1溫度感測器67相對於第1流量計65以及第1電動閥66配置於第1藥液噴嘴61側。同樣地,第2溫度感測器71相對於第2流量計69以及第2電動閥70配置於第2藥液噴嘴62側。第1溫度感測器67以及第2溫度感測器71配置於腔室6之中。圖10以及圖11示出了將第1溫度感測器67以及第2溫度感測器71配置於噴嘴保持架60上的示例。The first temperature sensor 67 is disposed downstream of the first flow meter 65 and the first electric valve 66. That is, the first temperature sensor 67 is disposed on the first chemical liquid nozzle 61 side with respect to the first flow meter 65 and the first electric valve 66. Similarly, the second temperature sensor 71 is disposed on the second chemical liquid nozzle 62 side with respect to the second flow meter 69 and the second electric valve 70. The first temperature sensor 67 and the second temperature sensor 71 are arranged in the chamber 6. 10 and 11 show examples in which the first temperature sensor 67 and the second temperature sensor 71 are arranged on the nozzle holder 60.
第1溫度感測器67的溫度檢測位置靠近第1藥液噴嘴61,因此能夠使基於第1溫度感測器67的檢測值而計算出的第1檢測溫度接近從第1藥液噴嘴61噴出時的藥液的實際的溫度。同樣地,第2溫度感測器71的溫度檢測位置靠近第2藥液噴嘴62,因此能夠使基於第2溫度感測器71的檢測值而計算出的第2檢測溫度接近從第2藥液噴嘴62噴出時的藥液的實際的溫度。由此,能夠以更高的精度對從第1藥液噴嘴61以及第2藥液噴嘴62噴出時的藥液的實際的溫度進行監視。The temperature detection position of the first temperature sensor 67 is close to the first chemical liquid nozzle 61. Therefore, the first detection temperature calculated based on the detection value of the first temperature sensor 67 can be brought close to being ejected from the first chemical liquid nozzle 61. The actual temperature of the medicinal solution at the time. Similarly, since the temperature detection position of the second temperature sensor 71 is close to the second chemical liquid nozzle 62, the second detection temperature calculated based on the detection value of the second temperature sensor 71 can be made close to the second chemical liquid. The actual temperature of the chemical solution when the nozzle 62 ejects. Accordingly, it is possible to monitor the actual temperature of the chemical liquid when ejected from the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 with higher accuracy.
圖14是表示供給至第1藥液噴嘴61以及第2藥液噴嘴62的藥液的流量的時間性變化的一例的圖表。圖15是表示供給至第1藥液噴嘴61以及第2藥液噴嘴62的藥液的溫度的時間性變化的一例的圖表。FIG. 14 is a graph showing an example of a temporal change in the flow rate of the chemical solution supplied to the first chemical solution nozzle 61 and the second chemical solution nozzle 62. FIG. 15 is a graph showing an example of temporal changes in the temperature of the chemical solution supplied to the first chemical solution nozzle 61 and the second chemical solution nozzle 62.
控制裝置3的輔助記憶裝置45記憶有多個方案與多個開度決定資料(參照圖4)。多個開度決定資料中包含對應於第1藥液噴嘴61的第1開度決定資料與對應於第2藥液噴嘴62的第2開度決定資料。方案中包含表示從第1藥液噴嘴61噴出的藥液的流量的目標值的第1指定流量、與表示從第2藥液噴嘴62噴出的藥液的流量的目標值的第2指定流量。並且,方案中包含表示從第1藥液噴嘴61噴出的藥液的溫度的目標值的第1設定溫度、與表示從第2藥液噴嘴62噴出的藥液的溫度的目標值的第2設定溫度。The auxiliary storage device 45 of the control device 3 stores a plurality of plans and a plurality of opening degree determination data (see FIG. 4). The plurality of opening degree determination data include first opening degree determination data corresponding to the first chemical liquid nozzle 61 and second opening degree determination data corresponding to the second chemical liquid nozzle 62. The plan includes a first specified flow rate indicating a target value of the flow rate of the chemical liquid ejected from the first chemical liquid nozzle 61 and a second specified flow rate indicating a target value of the flow rate of the medical liquid ejected from the second chemical liquid nozzle 62. In addition, the plan includes a first set temperature indicating a target value of the temperature of the chemical liquid ejected from the first chemical liquid nozzle 61 and a second setting indicating a target value of the temperature of the medical liquid ejected from the second chemical liquid nozzle 62 temperature.
第1指定流量是比第1目標開度大的第1初始開度的一例,第2指定流量是比第2目標開度大的第2初始開度的一例。第1指定流量以及第2指定流量既可以是彼此相等的值,也可以是互不相同的值。第1設定溫度以及第2設定溫度也一樣。圖14示出了第1指定流量少於第2指定流量的示例。圖15示出了第1設定溫度低於第2設定溫度的示例。The first designated flow rate is an example of a first initial opening degree which is larger than the first target opening degree, and the second designated flow rate is an example of a second initial opening degree which is larger than the second target opening degree. The first designated flow rate and the second designated flow rate may be equal to or different from each other. The same applies to the first set temperature and the second set temperature. FIG. 14 shows an example in which the first designated flow rate is less than the second designated flow rate. FIG. 15 shows an example in which the first set temperature is lower than the second set temperature.
在開始向第1藥液噴嘴61以及第2藥液噴嘴62供給藥液時,控制裝置3使第1電動閥66的開度增加至與第1指定流量相對應的開度。同樣地,控制裝置3使第2電動閥70的開度增加至與第2指定流量相對應的開度。在第2實施形態中,第1電動閥66以及第2電動閥70兼作開閉閥25,因此當第1電動閥66以及第2電動閥70打開時,藥液開始從第1藥液噴嘴61以及第2藥液噴嘴62噴出。圖14中示出了第1藥液噴嘴61以及第2藥液噴嘴62同時開始噴出藥液的示例。但是,第1藥液噴嘴61以及第2藥液噴嘴62也可以在互不相同的時期開始噴出藥液。When the supply of the chemical solution to the first chemical solution nozzle 61 and the second chemical solution nozzle 62 is started, the control device 3 increases the opening degree of the first electric valve 66 to an opening degree corresponding to the first specified flow rate. Similarly, the control device 3 increases the opening degree of the second electric valve 70 to an opening degree corresponding to the second specified flow rate. In the second embodiment, the first electric valve 66 and the second electric valve 70 also serve as the on-off valve 25. Therefore, when the first electric valve 66 and the second electric valve 70 are opened, the chemical liquid starts from the first chemical liquid nozzle 61 and The second chemical liquid nozzle 62 ejects. FIG. 14 shows an example in which the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 start ejecting the chemical liquid at the same time. However, the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62 may start ejecting the chemical liquid at different times.
如圖15所示,當第1電動閥66以及第2電動閥70打開時,第1檢測溫度以及第2檢測溫度急劇增加。當第1檢測溫度達到第1切換溫度時,控制裝置3開始溫度回饋控制,使第1電動閥66的開度接近第1目標開度。同樣地,當第2檢測溫度達到第2切換溫度時,控制裝置3開始溫度回饋控制,使第2電動閥70的開度接近第2目標開度。第1目標開度是基於第1開度決定資料、加熱溫度與第1設定溫度而決定的值。第2目標開度是基於第2開度決定資料、加熱溫度與第2設定溫度而決定的值。第1目標溫度低於第2目標溫度。As shown in FIG. 15, when the first electric valve 66 and the second electric valve 70 are opened, the first detection temperature and the second detection temperature increase sharply. When the first detection temperature reaches the first switching temperature, the control device 3 starts temperature feedback control so that the opening degree of the first electric valve 66 approaches the first target opening degree. Similarly, when the second detection temperature reaches the second switching temperature, the control device 3 starts temperature feedback control so that the opening degree of the second electric valve 70 approaches the second target opening degree. The first target opening degree is a value determined based on the first opening degree determination data, the heating temperature, and the first set temperature. The second target opening degree is a value determined based on the second opening degree determination data, the heating temperature, and the second set temperature. The first target temperature is lower than the second target temperature.
當開始溫度回饋控制時,控制裝置3基於第1溫度感測器67的檢測值而使第1電動閥66的開度增減。同樣地,控制裝置3基於第2溫度感測器71的檢測值而使第2電動閥70的開度增減。當開始溫度回饋控制後經過一定程度的時間時,第1檢測溫度限制於包含第1設定溫度的第1設定溫度範圍內,第2檢測溫度限制於包含第2設定溫度的第2設定溫度範圍內。由此,與第1設定溫度以及第2設定溫度相等或大致相等的溫度的藥液從第1藥液噴嘴61以及第2藥液噴嘴62噴出。When the temperature feedback control is started, the control device 3 increases or decreases the opening degree of the first electric valve 66 based on the detection value of the first temperature sensor 67. Similarly, the control device 3 increases or decreases the opening degree of the second electric valve 70 based on the detection value of the second temperature sensor 71. When a certain amount of time has passed since the temperature feedback control was started, the first detection temperature is limited to the first set temperature range including the first set temperature, and the second detection temperature is limited to the second set temperature range including the second set temperature. . As a result, the chemical liquid having a temperature equal to or substantially equal to the first set temperature and the second set temperature is ejected from the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62.
如上所述在第2實施形態中,從第1藥液噴嘴61噴出的藥液與從第2藥液噴嘴62噴出的藥液被供給至相同的基板W。第1藥液噴嘴61朝向基板W的上表面中央部噴出藥液,第2藥液噴嘴62朝向基板W的上表面上的多個著液位置噴出藥液。多個著液位置是在基板W的徑向上比基板W的上表面中央部靠外側的位置。因此,從第2藥液噴嘴62噴出的藥液在從第1藥液噴嘴61噴出的藥液的外側附著於基板W上。As described above, in the second embodiment, the chemical solution ejected from the first chemical solution nozzle 61 and the chemical solution ejected from the second chemical solution nozzle 62 are supplied to the same substrate W. The first chemical liquid nozzle 61 ejects the chemical liquid toward the center portion of the upper surface of the substrate W, and the second chemical liquid nozzle 62 ejects the chemical liquid toward a plurality of liquid-impacting positions on the upper surface of the substrate W. The plurality of liquid-impacting positions are positions outside the central portion of the upper surface of the substrate W in the radial direction of the substrate W. Therefore, the chemical solution ejected from the second chemical solution nozzle 62 is adhered to the substrate W outside the chemical solution ejected from the first chemical solution nozzle 61.
基板W上的藥液的溫度存在隨著遠離旋轉軸線A1而下降的傾向。如果對第1電動閥66以及第2電動閥70的開度進行個別設定,則可有意識地使從第2藥液噴嘴62噴出時的藥液的實際的溫度高於從第1藥液噴嘴61噴出時的藥液的實際溫度。由此,能夠降低基板W上的藥液的溫度的偏差,並能夠提高處理的均勻性。當然也能夠從第1藥液噴嘴61以及第2藥液噴嘴62噴出相同溫度或幾乎相同溫度的藥液。The temperature of the chemical solution on the substrate W tends to decrease as it moves away from the rotation axis A1. If the openings of the first electric valve 66 and the second electric valve 70 are individually set, the actual temperature of the chemical liquid when ejected from the second chemical liquid nozzle 62 can be made higher than that from the first chemical liquid nozzle. 61 The actual temperature of the chemical solution at the time of ejection. This makes it possible to reduce variations in the temperature of the chemical solution on the substrate W, and to improve processing uniformity. Of course, it is also possible to eject the chemical liquid having the same temperature or almost the same temperature from the first chemical liquid nozzle 61 and the second chemical liquid nozzle 62.
其次,對本發明的第3實施形態進行說明。Next, a third embodiment of the present invention will be described.
第3實施形態與第1實施形態以及第2實施形態主要的不同點在於:在第3實施形態中,流量調整閥24以及電動閥66、電動閥70的設定開度基於溫度感測器26、溫度感測器67、溫度感測器71所輸出的藥液配管22中的藥液的檢測溫度、與資訊獲取部所獲取的設定溫度而動態變更。下述內容可應用於第1實施形態以及第2實施形態中的任一者,但以下,以第1實施形態的構成為例進行說明。The main difference between the third embodiment and the first and second embodiments is that in the third embodiment, the set openings of the flow adjustment valve 24, the electric valve 66, and the electric valve 70 are based on the temperature sensor 26, The temperature of the medicinal solution detected in the medicinal solution pipe 22 output from the temperature sensor 67 and the temperature sensor 71 and the set temperature acquired by the information acquisition unit are dynamically changed. The following can be applied to either the first embodiment or the second embodiment, but the configuration of the first embodiment will be described below as an example.
圖16是表示本發明的第3實施形態的控制裝置103的功能塊的框圖。表2是表示控制裝置103中所記憶的開度決定資料d的一例的表。圖16所示的資訊獲取部151、開度決定部153、以及開度設定部154是通過CPU 42執行安裝於控制裝置103中的程式P來實現的功能塊。開度決定部153以及開度設定部154針對每個藥液噴嘴21而設。資訊獲取部151是資訊獲取機構的一例。FIG. 16 is a block diagram showing functional blocks of the control device 103 according to the third embodiment of the present invention. Table 2 is a table showing an example of the opening degree determination data d stored in the control device 103. The information acquisition unit 151, the opening degree determination unit 153, and the opening degree setting unit 154 shown in FIG. 16 are functional blocks realized by the CPU 42 executing a program P installed in the control device 103. The opening degree determination unit 153 and the opening degree setting unit 154 are provided for each of the chemical liquid nozzles 21. The information acquisition unit 151 is an example of an information acquisition organization.
基板處理方案中規定有從藥液噴嘴21噴出的藥液的設定溫度以及藥液噴出時間。資訊獲取部151從所述方案獲取藥液的設定溫度。溫度感測器26探測流經各處理單元2的藥液配管22的藥液的溫度並將其輸出至資訊獲取部151。資訊獲取部151獲取藥液的檢測溫度、設定溫度以及開度設定資料d,並將其輸出至開度決定部153。開度決定部153基於從資訊獲取部151輸出的資訊來決定設定開度。開度設定部154以使各流量調整閥24成為由開度決定部153所決定的設定開度的方式對所述各流量調整閥24進行控制。The substrate processing plan specifies a set temperature of the chemical solution ejected from the chemical solution nozzle 21 and a chemical solution ejection time. The information acquisition unit 151 acquires a set temperature of the medicinal solution from the protocol. The temperature sensor 26 detects the temperature of the chemical solution flowing through the chemical solution pipe 22 of each processing unit 2 and outputs it to the information acquisition unit 151. The information acquisition unit 151 acquires the detection temperature, the set temperature, and the opening degree setting data d of the chemical solution, and outputs them to the opening degree determination unit 153. The opening degree determination unit 153 determines the set opening degree based on the information output from the information acquisition unit 151. The opening degree setting unit 154 controls the flow rate adjusting valves 24 so that each flow rate adjusting valve 24 becomes a set opening degree determined by the opening degree determining unit 153.
表2是表示第3實施形態中開度決定資料d的一例的表,所述表中記憶有3等級的開度設定資料。最小開度p1對應於流量調整閥24的最小開度,最大開度p3對應於流量調整閥24的最大開度。中間開度p2是能夠使如下中間流量流過的流量調整閥24的開度,所述中間流量是設定為最小開度p1時流經流量調整閥24的流量與設定為最大開度p3時流經流量調整閥24的流量的中間流量。開度設定資料d也可以因方案以及流量調整閥24而不同。 [表2]
圖17是表示第3實施形態中流量調整閥24的調整的步驟圖。在開始圖17的步驟的時間點,藥液被加熱且在循環配管32(參照圖2)中循環,藥液的溫度以設定溫度而得到穩定。另外,處理單元2的自旋底座12上保持有基板W。FIG. 17 is a view showing a procedure of adjustment of the flow rate adjustment valve 24 in the third embodiment. When the step of FIG. 17 is started, the chemical solution is heated and circulated in the circulation pipe 32 (see FIG. 2), and the temperature of the chemical solution is stabilized at a set temperature. A substrate W is held on the spin base 12 of the processing unit 2.
首先,指定要由處理單元2執行的方案(步驟S114)。其次,資訊獲取部151從經指定的方案中獲取藥液的設定溫度與藥液的噴出時間。另外,資訊獲取部151獲取與經指定的方案相對應的開度決定資料d(步驟S115)。資訊獲取部151參照步驟S115中所獲取的開度決定資料d而獲取中間開度p2(步驟S116)。開度設定部154以使流量調整閥24成為中間開度p2的方式對所述流量調整閥24進行調整(步驟S117)。處理液供給部55在此狀態下經由藥液配管22將藥液供給至藥液噴嘴21(步驟S118)。由此,藥液以中間流量從藥液噴嘴21朝向基板W噴出。藥液的噴出開始後,資訊獲取部151獲取由溫度感測器26獲取的藥液的檢測溫度(步驟S119)。First, a scheme to be executed by the processing unit 2 is specified (step S114). Next, the information acquisition unit 151 acquires the set temperature of the medicinal solution and the ejection time of the medicinal solution from the designated plan. In addition, the information acquisition unit 151 acquires the opening degree determination data d corresponding to the designated plan (step S115). The information acquisition unit 151 refers to the opening degree determination data d obtained in step S115 to obtain the intermediate opening degree p2 (step S116). The opening degree setting unit 154 adjusts the flow rate adjustment valve 24 so that the flow rate adjustment valve 24 has an intermediate opening degree p2 (step S117). The processing liquid supply unit 55 supplies the chemical liquid to the chemical liquid nozzle 21 through the chemical liquid pipe 22 in this state (step S118). Thereby, the chemical solution is ejected toward the substrate W from the chemical solution nozzle 21 at an intermediate flow rate. After the discharge of the medicinal solution is started, the information acquisition unit 151 acquires the detected temperature of the medicinal solution obtained by the temperature sensor 26 (step S119).
其次,開度決定部153基於在步驟S119中所獲取的檢測溫度與設定溫度的大小關係來決定新的開度(步驟S120)。Next, the opening degree determination unit 153 determines a new opening degree based on the magnitude relationship between the detected temperature and the set temperature acquired in step S119 (step S120).
即,在檢測溫度超過設定溫度的情況下,為了使藥液的流量減少,而將比現在的設定開度稍小且不低於最小開度p1的開度決定為最新開度。在檢測溫度低於設定溫度的情況下,為了使藥液的流量增加,而將比現在的設定開度稍大且不超過最大開度p3的開度決定為最新開度。在檢測溫度與設定溫度相同的情況下,將現在的設定開度維持為最新開度。That is, when the detected temperature exceeds the set temperature, in order to reduce the flow rate of the chemical solution, the opening degree which is slightly smaller than the current set opening degree and not lower than the minimum opening degree p1 is determined as the latest opening degree. When the detection temperature is lower than the set temperature, in order to increase the flow rate of the medicinal solution, the opening degree which is slightly larger than the current set opening degree and does not exceed the maximum opening degree p3 is determined as the latest opening degree. When the detected temperature is the same as the set temperature, the current set opening degree is maintained at the latest opening degree.
之後,開度設定部154以使流量調整閥24成為在步驟S120中所決定的設定開度的方式對所述流量調整閥24進行控制(步驟S121)。Thereafter, the opening degree setting unit 154 controls the flow rate adjustment valve 24 so that the flow rate adjustment valve 24 becomes the set opening degree determined in step S120 (step S121).
之後,開度設定部154判斷是否經過了方案中所規定的藥液噴出時間(步驟S122)。Thereafter, the opening degree setting unit 154 determines whether or not the chemical liquid ejection time prescribed in the protocol has elapsed (step S122).
當開度設定部154判斷為經過了規定的藥液噴出時間時,轉移至步驟S123,處理液供給部55停止對藥液噴嘴21的藥液供給。另一方面,當開度設定部154判斷為未經過藥液噴出時間時,回到步驟S119,再次執行所述步驟S119至步驟S122的處理循環(cycle)。When the opening setting unit 154 determines that a predetermined chemical liquid ejection time has elapsed, the process proceeds to step S123, and the processing liquid supply unit 55 stops the chemical liquid supply to the chemical liquid nozzle 21. On the other hand, when the opening setting unit 154 determines that the chemical liquid ejection time has not elapsed, it returns to step S119 and executes the processing cycle of the steps S119 to S122 again.
其他實施形態Other embodiments
本發明不限於所述實施形態的內容,可進行各種變更。The present invention is not limited to the contents of the embodiment described above, and various changes can be made.
例如,在所述實施形態中,對通過流量的設定來控制藥液的溫度的情況進行了說明,但也可以通過流量的設定來對藥液以外的液體的溫度進行控制。For example, in the embodiment described above, the case where the temperature of the chemical liquid is controlled by setting the flow rate is described. However, the temperature of liquids other than the chemical liquid may be controlled by setting the flow rate.
也可以針對每個藥液噴嘴21來設置藥液槽31與加熱器33。The chemical solution tank 31 and the heater 33 may be provided for each chemical solution nozzle 21.
對在開始向藥液噴嘴21供給藥液時,使流量調整閥24的開度增加至與由方案所指定的指定流量相對應的開度(初始開度),之後使所述流量調整閥24的開度減少至目標開度的情況進行了說明,但只要比目標開度大,則初始開度也可以是不同於與指定流量相對應的開度的開度。When the supply of the medicinal solution to the medicinal solution nozzle 21 is started, the opening degree of the flow rate adjustment valve 24 is increased to an opening degree (initial opening degree) corresponding to the specified flow rate specified by the plan, and then the flow rate adjustment valve 24 The case in which the opening degree of φ is reduced to the target opening degree has been described, but as long as it is larger than the target opening degree, the initial opening degree may be different from the opening degree corresponding to the specified flow rate.
設於第1藥液噴嘴61的第1噴出口61a的數量也可以是兩個以上。與此相反,設於第2藥液噴嘴62的第2噴出口62a的數量,也可以是一個。The number of the first discharge ports 61a provided in the first chemical liquid nozzle 61 may be two or more. In contrast, the number of the second discharge ports 62a provided in the second chemical liquid nozzle 62 may be one.
基板處理裝置1並不限於對圓板狀的基板W進行處理的裝置,也可以是對多邊形的基板W進行處理的裝置。The substrate processing apparatus 1 is not limited to a device that processes a disc-shaped substrate W, and may be a device that processes a polygonal substrate W.
也可以對前述所有的構成的兩個以上進行組合。也可以對前述所有的步驟的兩個以上進行組合。You may combine two or more of all the said structures. It is also possible to combine two or more of all the aforementioned steps.
另外,能夠在申請專利範圍中所記載的事項的範圍內實施各種設計變更。In addition, various design changes can be implemented within the scope of the matters described in the patent application scope.
1‧‧‧基板處理裝置1‧‧‧ substrate processing device
1a‧‧‧外壁1a‧‧‧outer wall
2‧‧‧處理單元2‧‧‧ processing unit
3、103‧‧‧控制裝置3.103‧‧‧control device
4‧‧‧流體箱4‧‧‧fluid tank
5‧‧‧藥液櫃體5‧‧‧Medicine cabinet
6‧‧‧腔室6‧‧‧ chamber
7‧‧‧FFU7‧‧‧FFU
8‧‧‧隔壁8‧‧‧ next door
9‧‧‧擋板9‧‧‧ bezel
10‧‧‧自旋夾頭10‧‧‧ Spin Chuck
11‧‧‧夾頭銷11‧‧‧ chuck pin
12‧‧‧自旋底座12‧‧‧ Spin Base
13‧‧‧自旋馬達13‧‧‧ Spin Motor
14‧‧‧杯體14‧‧‧ cup body
14a‧‧‧傾斜部14a‧‧‧inclined
14b‧‧‧引導部14b‧‧‧Guide
14c‧‧‧收液部14c‧‧‧ Liquid collection department
15‧‧‧杯體升降單元15‧‧‧ Cup Lifting Unit
16‧‧‧沖洗液噴嘴16‧‧‧Flushing nozzle
17‧‧‧沖洗液配管17‧‧‧Flushing liquid pipe
18‧‧‧沖洗液閥18‧‧‧Flushing valve
21‧‧‧藥液噴嘴21‧‧‧medicine nozzle
22‧‧‧藥液配管22‧‧‧medicine piping
23‧‧‧流量計23‧‧‧Flowmeter
24‧‧‧流量調整閥24‧‧‧Flow regulating valve
25‧‧‧開閉閥25‧‧‧Open and close valve
26‧‧‧溫度感測器26‧‧‧Temperature sensor
27‧‧‧噴嘴移動單元27‧‧‧Nozzle moving unit
31‧‧‧藥液槽31‧‧‧ medicine tank
32‧‧‧循環配管32‧‧‧Circular piping
33‧‧‧加熱器33‧‧‧heater
34‧‧‧泵34‧‧‧Pump
35‧‧‧過濾器35‧‧‧filter
41‧‧‧電腦本體41‧‧‧Computer Body
42‧‧‧CPU42‧‧‧CPU
43‧‧‧主記憶裝置43‧‧‧Master memory device
44‧‧‧周邊裝置44‧‧‧ Peripherals
45‧‧‧輔助記憶裝置45‧‧‧ auxiliary memory device
46‧‧‧讀取裝置46‧‧‧Reading device
47‧‧‧通信裝置47‧‧‧communication device
48‧‧‧輸入裝置48‧‧‧ input device
49‧‧‧顯示裝置49‧‧‧display device
51、151‧‧‧資訊獲取部51, 151‧‧‧ Information Acquisition Department
52‧‧‧加熱執行部52‧‧‧Heating executive department
53、153‧‧‧開度決定部53, 153‧‧‧ opening decision department
54、154‧‧‧開度設定部54, 154‧‧‧ opening setting department
55‧‧‧處理液供給部55‧‧‧ Treatment liquid supply department
60‧‧‧噴嘴保持架60‧‧‧Nozzle holder
61‧‧‧第1藥液噴嘴61‧‧‧The first liquid medicine nozzle
61a‧‧‧第1噴出口61a‧‧‧The first spray outlet
61b‧‧‧噴出部61b‧‧‧Ejection Department
61c‧‧‧垂下部61c‧‧‧ vertical
61d‧‧‧水平部61d‧‧‧Horizontal
62‧‧‧第2藥液噴嘴62‧‧‧ 2nd liquid medicine nozzle
62a‧‧‧第2噴出口62a‧‧‧Second spray outlet
62b‧‧‧下水平部62b‧‧‧lower horizontal section
62c‧‧‧垂下部62c‧‧‧ vertical
62d‧‧‧上水平部62d‧‧‧Upper horizontal section
63‧‧‧支架63‧‧‧Scaffold
64‧‧‧第1藥液配管64‧‧‧The first liquid medicine piping
65‧‧‧第1流量計65‧‧‧The first flowmeter
66‧‧‧第1電動閥/電動閥66‧‧‧The first electric valve / electric valve
67‧‧‧第1溫度感測器/溫度感測器67‧‧‧The first temperature sensor / temperature sensor
68‧‧‧第2藥液配管68‧‧‧ 2nd liquid medicine piping
69‧‧‧第2流量計69‧‧‧ 2nd flowmeter
70‧‧‧第2電動閥/電動閥70‧‧‧The second electric valve / electric valve
71‧‧‧第2溫度感測器/溫度感測器71‧‧‧Second temperature sensor / temperature sensor
A1‧‧‧旋轉軸線A1‧‧‧axis of rotation
A2‧‧‧噴嘴轉動軸線A2‧‧‧Nozzle rotation axis
C‧‧‧載體C‧‧‧ carrier
CR‧‧‧中心機器人CR‧‧‧ Center Robot
D1‧‧‧第1噴出方向D1‧‧‧The first spray direction
D2‧‧‧第2噴出方向D2‧‧‧second ejection direction
D3‧‧‧長度方向D3‧‧‧length direction
d‧‧‧開度決定資料/開度設定資料d‧‧‧ opening degree decision data / opening degree setting data
HC‧‧‧主機電腦HC‧‧‧Host computer
IR‧‧‧索引機器人IR‧‧‧ Index Robot
LP‧‧‧裝載埠LP‧‧‧ Loading port
M‧‧‧可移動介質M‧‧‧ Removable media
P‧‧‧程式P‧‧‧Program
S1~S5、S11~S18、S114~S123‧‧‧步驟S1 ~ S5, S11 ~ S18, S114 ~ S123‧‧‧steps
W‧‧‧基板W‧‧‧ substrate
圖1是從上方觀察本發明的第1實施形態的基板處理裝置的示意圖。FIG. 1 is a schematic view of a substrate processing apparatus according to a first embodiment of the present invention as viewed from above.
圖2是水平地觀察處理單元的內部的示意圖。FIG. 2 is a schematic view in which the inside of the processing unit is viewed horizontally.
圖3是表示本發明的第1實施形態的藥液供給系統的示意圖。FIG. 3 is a schematic diagram showing a medicinal solution supply system according to the first embodiment of the present invention.
圖4是表示基板處理裝置的電氣構成的框圖。FIG. 4 is a block diagram showing an electrical configuration of the substrate processing apparatus.
圖5是用以對由基板處理裝置所執行的基板的處理的一例進行說明的步驟圖。FIG. 5 is a flowchart illustrating an example of processing of a substrate performed by a substrate processing apparatus.
圖6是表示控制裝置的功能塊的框圖。Fig. 6 is a block diagram showing functional blocks of a control device.
圖7是表示從開始對藥液加熱到將經加熱的藥液供給至基板為止的流程的一例的步驟圖。FIG. 7 is a step diagram showing an example of a flow from the start of heating the chemical solution to the supply of the heated chemical solution to the substrate.
圖8是表示供給至藥液噴嘴的藥液的流量以及溫度的時間性變化的一例的圖表。FIG. 8 is a graph showing an example of temporal changes in the flow rate and temperature of the chemical solution supplied to the chemical solution nozzle.
圖9是表示供給至藥液噴嘴的藥液的流量以及溫度的時間性變化的另一例的圖表。FIG. 9 is a graph showing another example of temporal changes in the flow rate and temperature of the chemical solution supplied to the chemical solution nozzle.
圖10是表示水平地觀察本發明的第2實施形態的第1藥液噴嘴以及第2藥液噴嘴的示意圖。FIG. 10 is a schematic view showing the first chemical liquid nozzle and the second chemical liquid nozzle of the second embodiment of the present invention viewed horizontally.
圖11是第1藥液噴嘴以及第2藥液噴嘴的示意性的平面圖。11 is a schematic plan view of a first chemical liquid nozzle and a second chemical liquid nozzle.
圖12是從圖10所示的箭頭XIII的方向觀察第1藥液噴嘴以及第2藥液噴嘴的示意圖。FIG. 12 is a schematic view of the first chemical liquid nozzle and the second chemical liquid nozzle as viewed from a direction of an arrow XIII shown in FIG. 10.
圖13是表示本發明的第2實施形態的藥液供給系統的示意圖。FIG. 13 is a schematic diagram showing a medicinal solution supply system according to a second embodiment of the present invention.
圖14是表示供給至第1藥液噴嘴以及第2藥液噴嘴的藥液的流量的時間性變化的一例的圖表。FIG. 14 is a graph showing an example of a temporal change in the flow rate of the chemical liquid supplied to the first chemical liquid nozzle and the second chemical liquid nozzle.
圖15是表示供給至第1藥液噴嘴以及第2藥液噴嘴的藥液的溫度的時間性變化的一例的圖表。15 is a graph showing an example of a temporal change in the temperature of a chemical solution supplied to a first chemical solution nozzle and a second chemical solution nozzle.
圖16是表示本發明的第3實施形態的控制裝置的功能塊的框圖。16 is a block diagram showing functional blocks of a control device according to a third embodiment of the present invention.
圖17是表示從方案(recipe)的獲取開始到停止經加熱的藥液的供給為止的處理的流程的一例的步驟圖。FIG. 17 is a step diagram showing an example of a flow of processing from the start of acquisition of a recipe to the stop of the supply of the heated chemical solution.
Claims (18)
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KR102268616B1 (en) * | 2019-08-06 | 2021-06-23 | 세메스 주식회사 | Apparatus for supplying chemical and method for supplying chemical |
JP7229394B2 (en) * | 2019-12-27 | 2023-02-27 | 東京エレクトロン株式会社 | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD |
JP2021152762A (en) * | 2020-03-24 | 2021-09-30 | 株式会社Screenホールディングス | Learned-model generating method, learned model, abnormality-factor estimating apparatus, substrate treating installation, abnormality-factor estimating method, learning method, learning apparatus, and learning-data preparing method |
KR102355356B1 (en) * | 2020-03-25 | 2022-01-25 | 무진전자 주식회사 | Chemical providing management system of semiconductor process |
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