JP6325919B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing technique for processing a substrate by supplying a processing liquid to the substrate while rotating the substrate.

  As such a substrate processing technique, Patent Document 1 discloses that a fluid whose temperature is controlled in advance is supplied to a large number of locations between the central portion and the peripheral portion of the lower surface of the substrate, and a processing liquid is sprayed onto the upper surface of the substrate. A substrate processing apparatus for processing a substrate is disclosed. The apparatus includes each temperature control unit that controls the temperature of each fluid supplied from a number of locations below the substrate. The temperature of each fluid is separately controlled by each temperature control unit so that the temperature of the fluid increases as the position supplied to the substrate moves from the central part to the peripheral part of the substrate. As a result, the apparatus suppresses the temperature difference of the substrate caused by the difference in the peripheral speed between the central portion and the peripheral portion of the substrate, and makes the substrate processing uniform with the processing liquid.

Japanese Patent No. 5123122

  In such a substrate processing apparatus, for example, a processing amount in the thickness direction of the substrate (for example, an etching amount or the like) is generally caused by a change in the substrate temperature (processing temperature) of about 0.1 ° C. to 0.2 ° C. Fluctuates greatly. In the substrate processing apparatus of Patent Document 1, the substrate temperature fluctuates due to the temperature difference between the processing liquid sprayed on the upper surface of the substrate and the fluid supplied to the lower surface of the substrate. There is a problem that is difficult. Also, depending on the quality of the film formed on the substrate and the presence or absence of scanning of the processing liquid supply position, the processing amount such as the etching amount by the processing liquid may not be uniform unless the temperature distribution in the radial direction of the substrate is made non-uniform. There is. However, since the substrate processing apparatus of Patent Document 1 performs temperature control that suppresses the temperature difference between the central portion and the peripheral portion of the substrate, there is a problem that it is difficult to make the substrate processing uniform depending on the processing conditions of the substrate. is there. Further, the substrate processing apparatus disclosed in Patent Document 1 has a problem that the number of temperature control units increases, the manufacturing cost of the apparatus increases, and temperature control becomes complicated.

  The present invention has been made to solve such problems, and can suppress both the difference between the desired processing amount of the substrate and the actual processing amount and the variation in the processing amount in each part of the substrate at low cost. The purpose is to provide technology.

  In order to solve the above problems, a substrate processing apparatus according to a first aspect includes a rotation holding unit that rotates a substrate while holding it horizontally, a first supply source that supplies first pure water at a first temperature, and A second supply source for supplying second pure water having a second temperature higher than the first temperature, and a pipe for distributing and guiding the first pure water to one first pure water and the other first pure water. A treatment liquid obtained by mixing the one first pure water and the chemical solution so as to mainly contain the one first pure water while being supplied with the first pure water from the system and the piping system. A treatment liquid supply unit that supplies a central region of the upper surface of the substrate, and the other first pure water is supplied from the piping system, and a first liquid mainly containing the other first pure water is supplied to the substrate. A first supply unit for supplying a central region of the lower surface, and a second liquid mainly containing the second pure water supplied from the second supply source, A second supply unit for supplying each of a peripheral region of the lower surface and an intermediate region of the lower surface between the peripheral region and the central region; and the temperature distribution in the radial direction of the substrate can be changed. A heat quantity control unit that independently controls the amount of heat supplied by the supply unit to the central region of the lower surface of the substrate and the amount of heat supplied by the second supply unit to the peripheral region and the intermediate region of the lower surface of the substrate;

  The substrate processing apparatus which concerns on a 2nd aspect is a substrate processing apparatus which concerns on a 1st aspect, Comprising: While the said piping system is connected to the said 1st supply source at one end, it branches in the middle of a pipe line There is a branch pipe.

  The substrate processing apparatus which concerns on a 3rd aspect is a substrate processing apparatus which concerns on the 1st or 2nd aspect, Comprising: The said 1st supply part is temperature of the same temperature as said 1st pure water and the said chemical | medical solution. The adjustment liquid is a mixture ratio of the one first pure water and the chemical liquid in the treatment liquid, and a mixture ratio of the other first pure water and the temperature adjustment liquid in the first liquid. Are mixed to prepare the first liquid.

  A substrate processing apparatus according to a fourth aspect is the substrate processing apparatus according to any one of the first to third aspects, wherein the processing liquid supply unit supplies the processing liquid to the upper surface of the substrate. A scanning unit that scans a supply position of the processing liquid on the upper surface of the substrate between a central region and a peripheral region of the upper surface of the substrate by scanning a nozzle above the upper surface of the substrate; The heat amount control unit includes: a heat amount that the first supply unit supplies to the substrate according to a position of the nozzle of the processing liquid supply unit that is being scanned by the scanning unit; and the second supply unit that is the substrate. The ratio with the amount of heat supplied to is changed.

  The substrate processing apparatus which concerns on a 5th aspect is a substrate processing apparatus which concerns on a 4th aspect, Comprising: The said heat quantity control part is the flow volume of the said 1st liquid which the said 1st supply part supplies, and the said 2nd supply. The ratio between the second liquid supplied by the unit and the flow rate is varied according to the position of the nozzle of the processing liquid supply unit scanned by the scanning unit.

  A substrate processing method according to a sixth aspect includes a rotation holding step of rotating the substrate while holding it horizontally, and the first pure water from one supply source of the first pure water at the first temperature. A step of distributing and guiding water and the other first pure water, and a treatment liquid obtained by mixing the first pure water and the chemical so as to mainly contain the first pure water. In parallel with the holding step, the processing liquid supply step for supplying the central region of the upper surface of the substrate, and the first liquid mainly containing the other first pure water, in parallel with the processing liquid supply step, A first supply step for supplying a central region on a lower surface of the substrate; a second liquid mainly containing second pure water having a second temperature higher than the first temperature; and the treatment liquid supply step and the treatment liquid supply step. In parallel with the peripheral area of the lower surface of the substrate, between the peripheral area and the central area A second supply step for supplying to each of the intermediate regions of the surface; and an amount of heat supplied to the central region of the lower surface of the substrate by the first supply step so that the radial temperature distribution of the substrate can be changed. And a heat amount control step for independently controlling the amount of heat supplied to the peripheral area and the intermediate area of the lower surface of the substrate by the second supply step.

  The substrate processing method which concerns on a 7th aspect is a substrate processing method which concerns on a 6th aspect, Comprising: The said distribution step uses the said 1st pure water in the middle of the path | route which guide | induces the said 1st pure water from the said supply source. Distributing the first pure water and the other first pure water.

  A substrate processing method according to an eighth aspect is the substrate processing method according to the sixth or seventh aspect, wherein the first supply step includes the temperature of the same temperature as the other first pure water and the chemical solution. The adjustment liquid is a mixture ratio of the one first pure water and the chemical liquid in the treatment liquid, and a mixture ratio of the other first pure water and the temperature adjustment liquid in the first liquid. And a preparation step of preparing the first liquid by mixing so as to be equal to each other.

  A substrate processing method according to a ninth aspect is the substrate processing method according to any one of the sixth to eighth aspects, wherein the processing liquid supplied to the upper surface of the substrate in the processing liquid supply step. A scanning step of scanning the supply position between a central region and a peripheral region of the upper surface of the substrate, wherein the heat quantity control step is performed according to the supply position of the processing liquid being scanned in the scanning step The ratio between the amount of heat supplied to the substrate by the first supply step and the amount of heat supplied to the substrate by the second supply step is varied.

  The substrate processing method according to a tenth aspect is the substrate processing method according to the ninth aspect, wherein the heat quantity control step includes the flow rate of the first liquid supplied in the first supply step, and the second In this step, the ratio between the second liquid supplied in the supply step and the flow rate is varied according to the supply position of the processing liquid being scanned in the scanning step.

  In the invention according to any one of the first to tenth aspects, the processing liquid and the first liquid supplied to the upper surface and the lower surface of the central area of the substrate are mainly the first pure water supplied from a common supply source. Therefore, it is easy to reduce the temperature difference between the processing liquid and the first liquid and bring the central area of the substrate closer to the temperature according to the desired processing amount in the thickness direction of the substrate. In addition, since the second liquid mainly containing the second pure water having a temperature higher than the first pure water is supplied to the peripheral region and the intermediate region of the substrate, the temperature of which is likely to be lower than the central region due to the rotation of the substrate. It becomes easy to make the temperature distribution in the radial direction uniform. Further, even when the required temperature distribution in the radial direction of the substrate is not uniform, the amount of heat supplied to the central area of the lower surface of the substrate via the first liquid and the intermediate area and the peripheral area of the lower surface of the substrate via the second liquid The temperature distribution in the radial direction of the substrate can be changed by independently controlling the amount of heat supplied. Therefore, the difference between the desired processing amount and the actual processing amount and the variation in the processing amount in each part of the substrate are determined by the amount of heat supplied from the two systems of the first liquid supply system and the second liquid supply system. It can be suppressed at a low cost by the control.

  According to the second or seventh aspect of the invention, since one first pure water and the other first pure water are distributed from the first pure water in the course of the route led from the supply source, The temperature difference between one first pure water supplied to the one supply unit and the other first pure water supplied to the second supply unit can be further suppressed. Therefore, it becomes easier to make the temperature difference between the processing liquid and the first liquid smaller, and to bring the central region of the substrate closer to the temperature according to the desired processing amount in the thickness direction of the substrate.

  According to the third or eighth aspect of the invention, the mixing ratio of one first pure water and the chemical liquid in the processing liquid and the mixing of the other first pure water and the temperature adjusting liquid in the first liquid. The first liquid is prepared by mixing the other first pure water and a temperature adjusting liquid having the same temperature as the chemical liquid so that the ratio becomes equal. Regardless of the mixing ratio, the temperature difference between the first liquid and the second liquid can be made smaller.

  According to the fourth or ninth aspect of the invention, the amount of heat supplied to the central area of the lower surface of the substrate and the peripheral area of the lower surface of the substrate according to the supply position of the processing liquid being scanned on the upper surface of the substrate And the ratio with the calorie | heat amount supplied to an intermediate area is fluctuate | varied. Thereby, the temperature distribution in the radial direction of the substrate can be made closer to the temperature distribution determined according to the supply position of the processing liquid. Therefore, even when the supply position of the processing liquid is scanned, it is possible to further suppress variation in the processing amount in each part of the substrate.

  According to the fifth or tenth aspect of the invention, the ratio between the flow rate of the first liquid and the second liquid and the flow rate is changed according to the supply position of the processing liquid being scanned. Since these flow rates can be changed quickly, it is possible to increase the responsiveness of fluctuations in the temperature distribution in the radial direction of the substrate with respect to fluctuations in the supply position of the processing liquid, and to reduce variations in the processing amount in each part of the substrate. It can be suppressed more.

It is a figure which shows typically an example of schematic structure of the substrate processing apparatus which concerns on embodiment. It is a perspective view which shows the structure of the lower nozzle of FIG. It is a top view which shows the structure of the lower nozzle of FIG. It is the figure which saw through the lower nozzle below the board | substrate from the upper direction of the board | substrate of FIG. It is a figure which shows an example of the relationship between the temperature distribution of the radial direction of a board | substrate, and the distribution of etching amount in a graph format. It is a figure which shows an example of the relationship between the temperature distribution of the radial direction of a board | substrate, and the distribution of etching amount in a graph format. It is a figure which shows an example of the relationship between the temperature distribution of the radial direction of a board | substrate, and the distribution of etching amount in a graph format. It is a figure which shows an example of the relationship between the temperature of a 1st liquid and a 2nd liquid, and distribution of etching amount in a graph format. It is a figure which shows an example of the relationship between the flow volume of a 1st liquid and a 2nd liquid, and distribution of etching amount in a graph format. It is a figure which shows typically the state from which the flow volume of a 1st liquid and a 2nd liquid is fluctuate | varied according to the position of the upper nozzle scanned.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the drawings, parts having the same configuration and function are denoted by the same reference numerals, and redundant description is omitted in the following description. Each drawing is schematically shown. In the description of the embodiment, the vertical direction is the vertical direction, the substrate W side is up, and the spin chuck 111 side is down.

<About the embodiment>
<1. Configuration of substrate processing apparatus>
FIG. 1 is a diagram schematically illustrating an example of a schematic configuration of a substrate processing apparatus 100 according to an embodiment. FIG. 2 is a perspective view showing the configuration of the lower nozzle 240. FIG. 3 is a top view showing the configuration of the lower nozzle 240. FIG. 4 is a perspective view of the lower nozzle 240 provided below the substrate W from above the substrate W. FIG. The lower nozzle 240 is indicated by a solid line in FIG.

  The substrate processing apparatus 100 processes a substrate using a processing liquid. Specifically, the substrate processing apparatus 100 performs an etching process on the upper surface (also referred to as “front surface”) S1 of the substrate W such as a semiconductor wafer by using, for example, an etching liquid as a processing liquid, so that the upper surface S1 is processed. The formed thin film (unnecessary material) is removed. In addition, for example, a cleaning liquid is used as the processing liquid. The lower surface S2 opposite to the upper surface S1 is also referred to as a “back surface”. The surface shape of the substrate W is substantially circular, and the upper surface S1 of the substrate W means a device forming surface on which a device pattern is formed.

  As shown in FIG. 1, the substrate processing apparatus 100 includes a spin chuck (“rotation holding unit”) 111 that rotates the substrate W while holding the substrate W in a substantially horizontal posture with the upper surface S1 facing upward. In the spin chuck 111, a cylindrical rotation support shaft 113 is coupled to a rotation shaft of a chuck rotation mechanism (“rotation unit”) 156 including a motor, and the rotation of the rotation axis (vertical axis) a1 is driven by the chuck rotation mechanism 156. That is, it is rotatable in a substantially horizontal plane.

  A disc-shaped spin base 115 is integrally connected to an upper end portion of the rotation support shaft 113 by fastening parts such as screws. Therefore, when the chuck rotation mechanism 156 is operated in accordance with an operation command from the control unit 161 that controls the entire apparatus, the rotation support shaft 113 and the spin base 115 rotate integrally around the rotation axis a1. . In addition, the control unit 161 controls the chuck rotation mechanism 156 to adjust the rotation speed. The control unit 161 is realized, for example, by the CPU executing a program stored in the memory.

  Near the periphery of the spin base 115, a plurality of chuck pins 117 for holding the periphery S3 of the substrate W are provided upright. Three or more chuck pins 117 may be provided to securely hold the circular substrate W, and are arranged at equiangular intervals along the peripheral edge of the spin base 115. Each chuck pin 117 holds the substrate W by pressing the peripheral portion S3 of the substrate W from below and the peripheral portion S3 supported by the substrate support portion toward the center of the substrate W from the side. And a peripheral edge holding portion. Each chuck pin 117 is configured to be switchable between a pressing state in which the peripheral edge holding portion presses the peripheral edge portion S3 of the substrate W and a released state in which the peripheral edge holding portion is separated from the peripheral edge portion S3.

  When the substrate W is delivered to the spin base 115, the substrate processing apparatus 100 releases the plurality of chuck pins 117 and performs processing such as etching or cleaning on the substrate W. The plurality of chuck pins 117 are in a pressed state. By setting the pressed state, the plurality of chuck pins 117 can hold the peripheral edge S3 of the substrate W and hold the substrate W in a substantially horizontal posture at a predetermined interval from the spin base 115. Thus, the substrate W is supported so that the rotation axis a1 passes through the centers of the upper surface S1 and the lower surface S2 with the surface (pattern forming surface) S1 facing upward and the lower surface S2 facing downward.

  A through hole connected to the through hole of the rotation support shaft 113 is formed at the center of the spin base 115. A cylindrical body 118 is inserted through the through hole and the through hole of the rotation support shaft 113. A flat pedestal 119 is attached to the upper end of the cylindrical body 118 so as to close the opening of the upper end. The upper surface of the pedestal 119 is a horizontal plane. On this upper surface, one end side portion of a long lower nozzle 240 extending along the lower surface S2 of the substrate W is fixed.

  The lower nozzle 240 has a flat shape. The upper surface and the lower surface of the lower nozzle 240 (more precisely, the portion excluding the draining portion 249 described later) form a horizontal plane. The upper surface and the lower surface are the main surfaces of the lower nozzle 240, respectively. The lower surface of the substrate W is arranged such that the lower surface of the lower nozzle 240 in the longitudinal direction and the upper surface of the pedestal 119 are positioned below the center of the substrate W so that the discharge port 241 provided on the upper surface of the lower nozzle 240 is located. They are in contact with each other below the central area K1 of S2. The other end of the lower nozzle 240 in the longitudinal direction reaches below the peripheral area K3 of the lower surface S2. The length from the rotation axis a1 to the other end of the lower nozzle 240 is larger than the radius of the rotation locus of the chuck pin 117 so that the chuck pin 117 standing on the rotating spin base 115 and the lower nozzle 240 do not interfere with each other. It is set short.

  The pedestal 119 and the one end side portion of the lower nozzle 240 are fixed to each other by screws 261 to 264. Countersink portions 251 to 253 are formed on the upper surface of one end portion of the lower nozzle 240. A through hole corresponding to the screw 261 is formed in the bottom portion of the counterbore portion 251, and two through holes corresponding to the screws 262 and 263 are formed in the bottom portion of the counterbore portion 252, and the bottom portion of the counterbore portion 253 is formed. Are formed with through holes corresponding to the screws 264. Screw holes corresponding to these through holes are also formed on the upper surface of the base 119. When the pedestal 119 and the lower nozzle 240 are fixed by screws 261 to 264, the head of the screw 261 is accommodated in the countersink portion 251 and the heads of the screws 262 and 263 are accommodated in the countersink portion 252. The head of H.264 is accommodated in the counterbore part 253. As a result, the heads of the screws 261 to 264 do not protrude from the upper surface of the lower nozzle 240.

  The countersink portion 251 is formed in a portion of the upper surface of one end side portion of the lower nozzle 240 on the upstream side in the rotation direction of the substrate W (upper side in FIG. 3) with respect to the line connecting the discharge ports 241 and 243. An opening is also formed on a side surface of one end side of 240 in the longitudinal direction. The countersink portion 252 is formed in a portion of the upper surface of one end portion of the lower nozzle 240 on the downstream side in the rotation direction of the substrate W (lower side in FIG. 3) with respect to the line connecting the discharge ports 241 and 243. The nozzle 240 also has an opening on the side surface on the downstream side (lower side in FIG. 3) of the substrate W in the rotation direction. The countersink part 253 is on the upstream side in the rotation direction of the substrate W (upper side in FIG. 3) with respect to the line connecting the discharge ports 241 and 243 in the upper surface of the one end side portion of the lower nozzle 240, and the countersink part 251. The lower nozzle 240 is formed on the other end side in the longitudinal direction.

  In order to suppress deformation such as bending due to heat, the lower nozzle 240 includes a core material 248 such as stainless steel that penetrates the lower nozzle 240 in the longitudinal direction. The core member 248 is provided on the upstream side in the rotational direction of the counterbore portions 251 and 253 along the end of the lower nozzle 240 on the upstream side in the rotational direction of the substrate W. For this reason, the counterbore part 253 opens only on the upper surface of the lower nozzle 240, and a drain hole 253 a that penetrates the lower nozzle 240 from the bottom surface to the lower surface of the lower nozzle 240 is formed on the bottom surface of the counterbore part 253. Has been. The drain hole 253a opens in a portion of the lower surface of the lower nozzle 240 that does not face the pedestal 119.

  A draining portion 249 extends along the longitudinal direction of the lower nozzle 240 at a portion of the lower nozzle 240 on the downstream side in the rotation direction of the substrate W and on the other end side in the longitudinal direction from the counterbore portion 252. Yes. The draining portion 249 is formed so as to become thinner toward the downstream side in the rotation direction of the substrate W, and the cross-sectional shape thereof is, for example, a triangle. The substrate processing apparatus 100 performs a rinsing process by discharging pure water from the lower nozzle 240 to the back surface of the substrate W after processing the substrate W with the processing liquid 53, and adheres to the lower nozzle 240 after the rinsing process. Swing off to remove the water drops. The rinsing process and the swing-off process are also performed in parallel with the rotation of the substrate W. By forming the draining portion 249 in the lower nozzle 240, the efficiency of removing water droplets in the swing-off process can be increased.

  The pedestal 119 is provided with through-holes that penetrate the pedestal 119 in the vertical direction at each part facing the inlets 244 and 245 provided on the lower surface of the lower nozzle 240. Further, supply pipes 281 and 282 for supplying the liquid 51 and the liquid 52 to the lower nozzle 240 are inserted into the cylindrical body 118. The liquid 51 and the liquid 52 are discharged from the lower nozzle 240 to the lower surface S2 of the substrate W in order to adjust the temperature distribution of the substrate W. The upper ends of the supply pipes 281 and 282 pass through the pedestal 119 and are connected to the inlets 244 and 245 in the through holes corresponding to the inlets 244 and 245 among the through holes of the base 119.

  The lower nozzle 240 discharges the liquids 51 and 52 to the lower surface S2 of the substrate W held by the spin chuck 111. Inside the lower nozzle 240, flow paths 246 and 247 for guiding the liquids 51 and 52, respectively, are formed at portions between the countersink portions 251 and 253 and the countersink portion 252. The flow path 246 penetrates the one end side part of the lower nozzle 240 in the longitudinal direction in the vertical direction. The opening of the flow path 246 on the lower surface of the lower nozzle 240 forms an introduction port 244 for introducing the liquid 51 into the flow path 246, and the opening of the flow path 246 on the upper surface of the lower nozzle 240 places the liquid 51 in the center of the lower surface of the substrate W. A discharge port 241 for discharging to the area K1 is formed. The discharge port 241 faces the central area K1.

  The flow path 247 extends from one end side in the longitudinal direction of the lower nozzle 240 to the other end side in the lower nozzle 240. The flow path 247 opens to the lower surface of one end side portion in the longitudinal direction of the lower nozzle 240, and this opening forms an inlet 245 for introducing the liquid 52 into the flow path 247. Moreover, the flow path 247 is opened in each of the center part of the longitudinal direction of the lower nozzle 240 in the upper surface of the lower nozzle 240, and an other end side part. Among these openings, the opening in the center portion forms a discharge port 242 for discharging the liquid 52 to the intermediate region K2 of the lower surface S2 of the substrate W, and the opening in the other end portion causes the liquid 52 to flow to the lower surface S2. The discharge port 243 for discharging to the peripheral area K3 is formed. The discharge port 242 faces the intermediate area K2, and the discharge port 243 faces the peripheral area K3.

  In FIG. 4, the central area K1 is an area surrounded by an alternate long and short dash line and hatched with diagonal lines. The peripheral area K3 is an area provided with a halftone dot pattern between the peripheral edge of the substrate W and the circle of the two-dot chain line. The intermediate area K2 is an area between the central area K1 and the peripheral area K3. In the intermediate area K2, the distance along the radial direction from the center of the substrate W among the substrates W, that is, the distance along the radial direction from the rotation axis a1, is, for example, from 1/3 of the radius of the substrate. This is a region that is 2/3 of the radius. Specifically, for example, the intermediate region K2 in the substrate having a radius of 150 mm is a region whose distance from the center of the substrate W is, for example, 50 mm to 100 mm.

  In the example of FIGS. 1 to 4, the central axis of the discharge port 241 coincides with the rotation axis a <b> 1 of the substrate W. However, the discharge port 241 is provided so as to be able to discharge the liquid 51 in the central region K <b> 1. The central axis of the discharge port 241 may not coincide with the rotation axis a1 of the substrate W. 1 to 4, the discharge ports 241 to 243, the introduction ports 244 and 245, the flow channel 246, and the flow channel 247 are provided in the common lower nozzle 240. However, in place of the lower nozzle 240, two lower nozzles formed separately from each other are adopted, and one lower nozzle is provided with the discharge port 241, the introduction port 244, and the flow path 246, and the other lower nozzle. The discharge port 242, the discharge port 243, the introduction port 245, and the flow path 247 may be provided. Further, even if the draining portion 249 is not formed, the usefulness of the present invention is not impaired.

  The substrate processing apparatus 100 rotates the substrate W at a predetermined rotational speed by rotating the spin chuck 111 holding the substrate W in this way by the chuck rotating mechanism 156, and the liquids 51 and 52 are transferred from the lower nozzle 240 to the lower surface. The temperature of the substrate W is adjusted by discharging to S2. Then, the substrate processing apparatus 100 performs a predetermined process (such as an etching process) on the substrate W by supplying the processing liquid 53 to the upper surface S1 of the substrate from an upper nozzle 120 described later.

  A nozzle rotation mechanism 155 provided with a motor is provided on the side of the substrate W held by the spin chuck 111, and the operation of the nozzle rotation mechanism 155 is controlled by the control unit 161. A rigid tubular piping arm 280 is attached to the nozzle rotation mechanism 155 so as to be rotatable in a substantially horizontal plane with the nozzle rotation mechanism 155 as a rotation center.

  One end of the piping arm 280 passes through the nozzle rotating mechanism 155 and reaches the lower surface thereof, and the other end is located above the central region of the upper surface S1 of the substrate W by the piping arm 280 being turned by the nozzle rotating mechanism 155. Can be positioned. An upper nozzle 120 is attached to the other end. When the substrate W is delivered to the spin base 115 or the like, the piping arm 280 is turned and the upper nozzle 120 is retracted from the substrate W loading path. Further, when performing an etching process or a rinsing process, the position (processing position) of the upper nozzle 120 is accurately adjusted above the central area of the upper surface S1 by servo control. Here, the servo control is controlled by the control unit 161. Therefore, the position of the upper nozzle 120 can be adjusted by a command from the control unit 161.

  Inside the piping arm 280, a flow path for supplying the processing liquid 53 to the upper nozzle 120 is disposed from the upper end of the upper nozzle 120 to below the lower surface of the nozzle rotating mechanism 155. The upper nozzle 120 discharges the supplied processing liquid 53 downward from the discharge port facing the upper surface S1 of the substrate W. Thereby, the processing liquid 53 is discharged toward the central region of the upper surface S1 of the substrate W whose temperature distribution is adjusted by the lower nozzle 240, and the substrate W is processed. The upper surface S <b> 1 is processed as a whole when the processing liquid 53 spreads to the peripheral edge S <b> 3 of the substrate W due to the centrifugal force generated by the rotation of the substrate W acting on the discharged processing liquid 53.

  The substrate rotation apparatus 155 rotates the piping arm 280 to scan the upper nozzle 120 relative to the rotation trajectory of the upper surface S1 of the substrate W, so that the substrate processing apparatus 100 causes the processing liquid 53 to flow onto the upper surface S1. It can also be supplied to the entire surface. Thus, if the upper nozzle 120 is scanned, the processing uniformity is further improved. In this scanning, for example, the upper nozzle 120 is reciprocally scanned between the upper area of the upper surface S1 and the upper area of the upper surface S1. In other words, the nozzle rotating mechanism 155 scans the upper nozzle 120 that supplies the processing liquid 53 to the upper surface S1 of the substrate W above the upper surface S1 of the substrate W, so that the processing liquid 53 on the upper surface S1 of the substrate W is scanned. It operates as a scanning unit that scans the supply position between the central region and the peripheral region of the upper surface S1 of the substrate W. Instead of the nozzle rotating mechanism 155 and the piping arm 280, a scanning mechanism that linearly scans the upper nozzle 120, for example, above the upper surface S1 may be employed.

The substrate processing apparatus 100 includes a pure water supply source (“first supply source”) 131 that supplies pure water having a first temperature (“first pure water”) 11 and a pure water having a second temperature that is higher than the second temperature. A pure water supply source (“second supply source”) 132 that supplies water (“second pure water”) 12, a chemical solution supply source 133 that supplies chemical solution 13, and a liquid supply source 134 that supplies liquid 14 And more. As the chemical solution 13, for example, hydrofluoric acid (HF), ammonium hydroxide (NH ₄ OH), hydrochloric acid (HCL), hydrogen peroxide (H ₂ O ₂ ), or the like is employed. The chemical solution supply source 133 may supply a plurality of chemical solutions in parallel as the chemical solution 13. As the liquid 14, pure water or chemical 13 is preferably used.

  Each of the pure water supply sources 131 and 132, the chemical solution supply source 133, and the liquid supply source 134 includes a heater that can heat the supplied liquid, a temperature sensor that can detect the temperature of the liquid, a pump that sends out the liquid, and the like. And a sending means (not shown) are incorporated.

  The control unit 161 controls the amount of heat generated by each heater so that the temperature of the liquid detected by each temperature sensor becomes the target temperature, and the pure water supply sources 131 and 132, the chemical solution supply source 133, and the liquid supply source 134. Controls the temperature of pure water 11, pure water 12, chemical solution 13, and liquid 14 supplied by the liquid.

  More specifically, the control unit 161 controls the heaters based on the detected temperatures of the temperature sensors of the pure water supply sources 131 and 132, so that the pure water 11 supplied by the pure water supply source 131 is controlled. While setting temperature to 1st temperature, the temperature of the pure water 12 which the pure water supply source 132 supplies is set to 2nd temperature higher than 1st temperature. The controller 161 can freely control the first temperature and the second temperature within a predetermined temperature range according to preset setting information. The control unit 161, the temperature sensor and heater of the pure water supply source 131, and the temperature sensor and heater of the pure water supply source 132 set the first temperature of the pure water 11 and the second temperature of the pure water 12 to a predetermined level. A temperature control unit 164 that can be freely controlled within the temperature range is provided. That is, the temperature control unit 164 performs temperature control for controlling the temperature of the pure water 11 in the pure water supply source 131 (first temperature) and the temperature of the pure water 12 in the pure water supply source 132 (second temperature). .

  Further, the control unit 161 can freely control the temperatures of the chemical solution 13 and the liquid 14 within a predetermined temperature range according to preset setting information by controlling the heaters incorporated in the chemical solution supply source 133 and the liquid supply source 134, respectively. Can be controlled. Preferably, the control unit 161 controls the temperature of the liquid 14 and the temperature of the chemical liquid 13 (the temperature of each chemical liquid when the chemical liquid supply source 133 supplies a plurality of chemical liquids as the chemical liquid 13) to the same temperature.

  The substrate processing apparatus 100 further includes a mixing unit 191 and a mixing unit 192. The mixing unit 191 and the mixing unit 192 are each configured by a mixing valve, for example. The mixing unit 191 is connected to the chemical solution supply source 133 through a pipe 381 and is connected to the pure water supply source 131 through a pipe 382. The mixing unit 191 is connected to one end of the pipe arm 280 reaching the lower end of the nozzle rotating mechanism 155 by a pipe 386.

  The mixing unit 192 is connected to the pure water supply source 131 by a part of the pipe 382 and a pipe 383 branched from the middle of the pipe 382, and is connected to the liquid supply source 134 by the pipe 384. The mixing unit 192 is connected to the supply pipe 281 by a pipe 387.

  A portion of the pipe 382 on the downstream side of the branch portion where the pipe 383 is branched distributes the pure water 11 supplied by the pure water supply source 131 to one pure water (“one first pure water”) 11a. To do. The pipe 383 distributes the pure water 11 to the other pure water (“the other first pure water”) 11b. The piping 382 and the piping 383 constitute a piping system 380. That is, the pipe system 380 is a branch pipe that has one end connected to the pure water supply source 131 and branches in the middle of the pipe. The piping system 380 distributes the pure water 11 supplied by the pure water supply source 131 into the pure water 11 a and the pure water 11 b, guides the pure water 11 a to the mixing unit 191, and guides the pure water 11 b to the mixing unit 192.

  Note that the piping system 380 includes a pipe having one end connected to the pure water supply source 131 and the other end connected to the mixing unit 192 instead of the pipe 383 branched from the middle of the pipe 382. The pure water 11 supplied by the pure water supply source 131 may be distributed between the pure water 11a and the pure water 11b.

  The pure water supply source 132 is connected to the supply pipe 282 by a pipe 385, and supplies the pure water 12 to the supply pipe 282 through the pipe 385 as the liquid 52.

  A flow rate controller 181 and an opening / closing valve 171 are provided in the middle of the route of the pipe 381, and a flow rate controller 182 and an opening / closing valve 172 are provided in the middle of the route of the pipe 382. 183 and an opening / closing valve 173, and a flow rate controller 184 and an opening / closing valve 174 are provided in the middle of the route of the pipe 384. Further, a flow rate controller 185 and an opening / closing valve 175 are provided in the middle of the path of the pipe 385, and an opening / closing valve 176 is provided in the middle of the path of the pipe 386. When the chemical liquid supply source 133 supplies a plurality of chemical liquids in parallel as the chemical liquid 13, the pipe 381 is constituted by a plurality of pipes, and a flow rate controller and an opening / closing valve are provided for each pipe. That is, in this case, the flow rate controller 181 and the open / close valve 171 are respectively configured by a plurality of flow rate controllers and a plurality of open / close valves.

  The flow controllers 181 to 185 include, for example, a flow meter that detects the flow rate of the liquid flowing through the pipes provided with each of the flow controllers 181 to 185 and a variable valve that can adjust the flow rate of the liquid according to the opening / closing amount of the valve. It is configured. For each of the flow controllers 181 to 185, the control unit 161 opens and closes the variable valves of the flow controllers 181 to 185 via a valve control mechanism (not shown) so that the flow rate detected by the flow meter becomes the target flow rate. To control. The control unit 161 can freely control the flow rate of each liquid passing through the flow rate controllers 181 to 185 within the predetermined range by setting the target flow rate within the predetermined range in accordance with preset setting information. it can. In addition, the control unit 161 controls the open / close valves 171 to 177 to an open state or a closed state via the valve control mechanism.

  The control unit 161 controls the flow rate of the chemical solution 13 passing through the flow rate controller 181 within a predetermined range and controls the open / close valve 171 to be in an open state, whereby the chemical solution 13 is supplied to the mixing unit 191. In addition, the control unit 161 controls the flow rate of the pure water 11a passing through the flow rate controller 182 within a predetermined range, and the open / close valve 172 is controlled to be opened so that the pure water 11a is supplied to the mixing unit 191. Is done.

  The control unit 161 has a flow rate of the pure water 11a that passes through the flow rate controller 182 and a flow rate of the chemical solution 13 that passes through the flow rate controller 181 (if the chemical solution 13 is a plurality of chemical solutions, each flow rate of each chemical solution). The flow rate controllers 181 and 182 are controlled so as to obtain a preset flow rate ratio. This flow rate ratio is a flow rate ratio in which the flow rate of the pure water 11 a is greater than the flow rate of the chemical solution 13. For example, when the SC-1 solution is prepared as the treatment solution 53 by mixing ammonium hydroxide, hydrogen peroxide, and pure water, for example, ammonium hydroxide, hydrogen peroxide, and pure water (pure water) The water 11a) is supplied to the mixing unit 191 at a flow rate ratio of 1: 4: 20, for example. The controller 161 can also change the flow rate ratio according to setting information set in advance according to the type and temperature of the chemical solution 13.

  The pure water 11a and the chemical solution 13 supplied to the mixing unit 191 are mixed at a mixing ratio equal to the flow rate ratio between the pure water 11a and the chemical solution 13 by the mixing unit 191 to prepare the treatment liquid 53. When the control unit 161 controls the opening / closing valve 176 to be in the open state, the processing liquid 53 is supplied from the mixing unit 191 to the upper nozzle 120 via the pipe 386 and the pipe arm 280, and is discharged from the discharge port of the upper nozzle 120 to the substrate W. It is discharged to the central area of the upper surface S1.

  The mixing unit 191, the pipe 386, the opening / closing valve 176, the nozzle rotating mechanism 155, the pipe arm 280, and the upper nozzle 120 constitute a processing liquid supply unit 303. In other words, the treatment liquid supply unit 303 is supplied with the pure water 11a from the pipe 382 in the pipe system 380, and at the same time, treats the treatment liquid 53 obtained by mixing the pure water 11a and the chemical liquid 13 so as to mainly contain the pure water 11a. It is supplied to the upper surface S1 of W.

  The control unit 161 controls the flow rate of the pure water 11b passing through the flow rate controller 183 within a predetermined range, and controls the open / close valve 173 to be in an open state, whereby the pure water 11b is supplied to the mixing unit 192. . Further, the control unit 161 controls the flow rate of the liquid 14 passing through the flow rate controller 184 within a predetermined range, and controls the open / close valve 174 to be in an open state, whereby the liquid 14 is supplied to the mixing unit 192. . The control unit 161 controls the flow rate controllers 183 and 184 so that the flow rate of the pure water 11b and the flow rate of the liquid 14 become a preset flow rate ratio. This flow rate ratio is a flow rate ratio in which the flow rate of the pure water 11b is greater than the flow rate of the liquid 14. The controller 161 can also change the flow rate ratio according to preset setting information.

  The control unit 161 can control the flow rate controllers 183 and 184 so that the flow rate between the pure water 11b and the liquid 14 is changed while maintaining the flow rate ratio between the pure water 11b and the liquid 14, and can change the flow rate ratio. Accordingly, the flow rate controllers 183 and 184 can be controlled so that the flow rates of the pure water 11b and the liquid 14 fluctuate.

  Further, when the temperature of the chemical liquid 13 and the liquid 14 is equal, the control unit 161 is preferably supplied to the mixing unit 192 and the flow rate ratio between the pure water 11b supplied to the mixing unit 192 and the liquid 14. The flow rate ratio between the pure water 11b and the liquid 14 is controlled so that the flow rate ratio between the pure water 11a and the chemical solution 13 is equal.

  The pure water 11b and the liquid 14 supplied to the mixing unit 192 are mixed at a mixing ratio equal to the flow rate ratio between the pure water 11b and the liquid 14 by the mixing unit 192 to prepare the liquid 51. When the control unit 161 controls the open / close valve 177 to be in the open state, the liquid 51 is introduced from the mixing unit 192 through the pipe 387 and the supply pipe 281 into the flow channel 246 of the lower nozzle 240 through the piping 387 and the discharge port. From 241, it is discharged to the central area K1 of the lower surface S2 of the substrate W.

  The mixing unit 192, the pipe 387, the opening / closing valve 177, the supply pipe 281, the flow path 246 of the lower nozzle 240 and the discharge port 241 constitute the first supply unit 301. That is, the first supply unit 301 is supplied with the pure water 11b from the pipe 383 in the pipe system 380 and supplies the liquid 51 mainly containing the pure water 11b to the central region K1 of the lower surface S2 of the substrate W. The first supply unit 301 preferably includes the pure water 11b, the temperature adjusting liquid 14 having the same temperature as the chemical liquid 13, the mixing ratio of the pure water 11a and the chemical liquid 13 in the processing liquid 53, and the liquid 51. The liquid 51 is prepared by mixing so that the mixing ratio of the pure water 11b and the liquid 14 is equal. Thereby, the temperature difference between the liquid 51 and the treatment liquid 53 can be further suppressed.

  The control unit 161 controls the flow rate of the pure water 12 passing through the flow rate controller 185 within a predetermined range and controls the open / close valve 175 to be in an open state, whereby the pure water 12 as the liquid 52 is purified water. It is supplied from the supply source 132 to the supply pipe 282 through the pipe 385. Then, the liquid 52 is introduced into the flow path 247 of the lower nozzle 240 from the inlet 245 connected to the supply pipe 282, and discharged from the outlets 242 and 243 to the intermediate area K2 and the peripheral area K3 of the lower surface S2 of the substrate W. The In addition, a mixing unit such as a mixing valve is further provided in the course of the pipe 385, and a chemical is further supplied to the mixing unit at a flow rate smaller than the flow rate of the pure water 12 supplied to the mixing unit. And the chemical liquid may be mixed to prepare the liquid 52. That is, the liquid 52 may be the pure water 12 itself, or may be a liquid in which the pure water 12 and the chemical liquid are mixed so as to mainly contain the pure water 12. The pure water 12 itself is also a liquid mainly containing the pure water 12.

  The pipe 385, the flow rate controller 185, the open / close valve 175, the supply pipe 282, the flow path 247 of the lower nozzle 240, and the discharge ports 242 and 243 constitute the second supply unit 302. That is, the second supply unit 302 supplies the liquid 52 mainly containing the pure water 12 supplied from the pure water supply source 132 between the peripheral area K3 of the lower surface S2 of the substrate W, the peripheral area K3, and the central area K1. To each of the intermediate area K2 of the lower surface S2.

  Further, the control unit 161 and the flow rate controllers 183 to 185 form a flow rate control unit 163. The flow rate controller 163 independently controls the flow rate of the liquid 51 in which the pure water 11b and the liquid 14 are mixed by the mixing unit 192 and the flow rate of the liquid 52 (pure water 12). The amount of heat supplied to the substrate W by the first supply unit 301 and the amount of heat supplied to the substrate W by the second supply unit 302 can be controlled independently so that the temperature distribution in the radial direction can be changed.

  The temperature control unit 164 described above independently controls the temperature of the pure water 11 in the pure water supply source 131 (first temperature) and the temperature of the pure water 12 in the pure water supply source 132 (second temperature). Thus, the amount of heat supplied to the substrate W by the first supply unit and the amount of heat supplied to the substrate W by the second supply unit 302 can be controlled independently so that the temperature distribution in the radial direction of the substrate W can be changed.

  The flow rate control unit 163 and the temperature control unit 164 form a heat quantity control unit 162. Accordingly, the heat amount control unit 162 determines the amount of heat supplied to the substrate W by the first supply unit and the amount of heat supplied to the substrate W by the second supply unit 302 so that the radial temperature distribution of the substrate W can be changed. Can be controlled independently.

  Among the components of the substrate processing apparatus 100, for example, the components other than the pure water supply sources 131 and 132, the chemical solution supply source 133, and the liquid supply source 134 are housed in a common housing, and the pure water supply source 131 is used. 132, the chemical liquid supply source 133, and the liquid supply source 134 are installed, for example, on a floor other than the installation chamber in which the casing is installed. In this case, the branching portion where the pipe 383 branches from the pipe 382 in the pipe system 380 is preferably housed in the housing. Note that the pure water supply sources 131 and 132, the chemical solution supply source 133, and the liquid supply source 134 may also be housed in the casing.

  In the substrate processing apparatus 100, the rotation of the substrate W by the spin chuck 111, the supply of the liquid 51 to the central area K1 of the lower surface S2 of the substrate W by the first supply unit 301, and the lower surface S2 by the second supply unit 302. The supply of the liquid 52 to the intermediate region K2 and the peripheral region K3 and the supply of the processing liquid 53 to the upper surface S1 of the substrate W by the processing liquid supply unit 303 are performed in parallel with each other. The substrate processing apparatus 100 can also supply only the liquid 51 of the liquid 51 and the liquid 52 to the lower surface S <b> 2 of the substrate W. Further, the pure water supply source 132 may be configured by the pure water supply source 131 and a heater or the like for heating the pure water 11 supplied by the pure water supply source 131 to the second temperature. The pure water supply source 131 may be configured by a mixing unit that prepares pure water having a first temperature by mixing pure water having a temperature lower than the first temperature with the pure water 12 supplied by the pure water supply source 132. Good.

<2. Temperature distribution in substrate radial direction and etching amount distribution>
5 to 7 are graphs showing examples of the relationship between the temperature distribution in the radial direction of the substrate W and the etching amount distribution in the case where an etching solution is used as the processing solution 53, respectively. The etching amount is proportional to the etching rate.

  In FIG. 5, the film to be processed formed on the substrate W is a thermal oxide film (Th-Oxide). In FIG. 6, the film to be processed is amorphous silicon (a-Si). In FIG. The film to be processed is polysilicon (poly-Si).

5 to 7, the etching solution is supplied from above the central region of the substrate, and ammonium hydroxide (NH ₄ OH) and pure water are mixed at a ratio of 1 to 5 as the etching solution. Dilute ammonium hydroxide at 40 ° C. is used. The etching time is 30 seconds. The temperature distribution of the substrate is preset to the temperature distribution shown in FIGS. Before the etching process, a cleaning process for 30 seconds is performed using dilute hydrofluoric acid (DHF) in which hydrofluoric acid (HF) and pure water are mixed at a ratio of 1: 100.

  In the example of FIG. 5, it can be said that there is a very high correlation between the temperature in the radial direction of the substrate and the etching amount. However, in the example of FIG. 6, the distribution of the etching amount finally becomes substantially uniform by setting the temperature distribution in the radial direction of the substrate to a distribution in which the temperature becomes higher as it is closer to the periphery of the substrate. That is, it can be said that there is a large difference in the relationship between the temperature and the etching amount depending on the radial position of the substrate. In the example of FIG. 7, the temperature distribution in the radial direction of the substrate is uniform, but the distribution of the etching amount is not uniform. Specifically, the etching amount is the smallest in the peripheral area of the substrate and the largest in the intermediate area. The etching amount in the central area of the substrate is larger than the peripheral area and smaller than the intermediate area. That is, it can be said that there is a large difference in the relationship between the temperature and the etching amount depending on the radial position of the substrate.

  As shown in FIGS. 5 to 7, depending on the quality of the film to be processed formed on the substrate, even if the temperature distribution in the radial direction of the substrate is made uniform, the distribution of the etching amount may not be uniform. . In this case, in order to make the etching amount uniform, the temperature distribution must be made non-uniform.

<3. Supply pattern of amount of heat supplied to substrate W and distribution of etching amount>
FIGS. 8 and 9 are graphs showing examples of the relationship between the supply pattern of the amount of heat supplied to the substrate W by the lower nozzle 240 and the distribution of the etching amount in the radial direction of the substrate W, respectively. In FIG. 8, the liquid 51 (first liquid) discharged from the lower nozzle 240 to the central area K1 of the lower surface S2 of the substrate W, and the liquid 52 (second liquid) discharged to the intermediate area K2 and the peripheral area K3 of the lower surface S2. The amount of heat supplied to the substrate W is changed by changing the temperature. In FIG. 9, the amount of heat supplied to the substrate W is changed by changing the flow ratio of the liquid 51 and the liquid 52. As the liquids 51 and 52, pure water is used.

  In the examples of FIGS. 8 and 9, the etching solution as the processing solution 53 is supplied from above the central region of the substrate. As an etchant, dilute hydrofluoric acid (DHF), in which hydrofluoric acid (HF) and pure water are mixed at a ratio of 1:50 and the temperature is adjusted to 24 ° C., is used. The processing time is 300 seconds. The film to be processed formed on the substrate W is a thermal oxide film (Th-Oxide).

  In FIG. 8, the combinations of temperatures of the liquid 51 and the liquid 52 are set in three patterns. In two of the three patterns, both the liquid 51 and the liquid 52 are supplied at a flow rate of 1000 ml / min. The temperature of the liquid 51 is adjusted to 24 ° C. in either of the two patterns, while the temperature of the liquid 52 is adjusted to 27 ° C. in one of the two patterns and 26 ° C. in the other. Yes. In the remaining one of the three temperature combination patterns, only the liquid 51 of the liquids 51 and 52 is supplied at a flow rate of 2000 ml / min. The temperature of the liquid 51 is adjusted to 24 ° C.

  In any of the three combinations of temperature patterns, the etching amount in the central region is slightly larger in the portion extending from the central region to the intermediate region of the upper surface S1 of the substrate W, but the etching amount is substantially uniform as a whole. Distribution is obtained. On the other hand, the distribution of the etching amount in the part from the intermediate region to the peripheral region is different from each other in the three temperature combination patterns. When the liquid 52 is not supplied, the etching amount decreases toward the peripheral side. When the liquid 52 at 26 ° C. is supplied, a substantially uniform etching amount distribution is obtained. When the liquid 52 at 27 ° C. is supplied, the etching amount increases toward the peripheral side.

  In the processing conditions of FIG. 8 (film quality of the substrate, etching solution supply method, etc.), the liquid 51 is set to 24 ° C. and the liquid 52 is set to 26 ° C., so that the etching amount in the radial direction of the substrate is substantially uniform. You can see that In the substrate processing apparatus 100, the temperature conditions of the liquid 51 and the liquid 52 that can make the etching amount in the radial direction of the substrate almost uniform with respect to each processing condition are obtained in advance through experiments or the like, and the control unit 161 as setting information. Is stored in the memory or the like. The control unit 161 reads the temperature conditions of the liquid 51 and the liquid 52 corresponding to the processing conditions of the substrate W to be processed, and performs control by the temperature control unit 164.

  In FIG. 9, the flow ratio between the liquid 51 and the liquid 52 is set in three ways. Specifically, the flow rate ratio includes a setting in which only the liquid 51 of the liquids 51 and 52 is supplied and the liquid 52 is not supplied, a setting in which the flow rates of the liquid 51 and the liquid 52 are equal, and the liquid 51 and the liquid 52. The flow rate is set in three ways with a setting of 1: 3. In any of the three patterns, the temperature of the liquid 51 and the liquid 52 is 24 ° C., respectively. The flow rate of the liquid 51 when both the liquids 51 and 52 are supplied is 1000 ml / min. Further, the flow rate of the liquid 51 when only the liquid 51 is supplied among the liquids 51 and 52 is 2000 ml / min.

  In any of the three flow rate ratio setting patterns, although the etching amount in the central region is slightly larger in the portion extending from the central region to the intermediate region on the upper surface S1 of the substrate W, the etching amount is substantially uniform as a whole. The distribution of is obtained. On the other hand, the distribution of the etching amount in the portion from the intermediate region to the peripheral region is different from each other in the three patterns. When the liquid 52 is not supplied, the etching amount decreases toward the peripheral side. When the flow rate ratio is 1: 1, a substantially uniform etching amount distribution is obtained. When the flow rate ratio is 1: 3, the etching amount increases toward the periphery of the substrate W.

  In the processing conditions of FIG. 9 (substrate film quality, etching solution supply method, etc.), the flow rate ratio between the liquid 51 and the liquid 52 is set to 1: 1, so that the etching amount in the radial direction of the substrate is substantially uniform. I understand that I can do it. In the substrate processing apparatus 100, a flow rate ratio (flow rate condition) between the liquid 51 and the liquid 52 that can make the etching amount in the radial direction of the substrate substantially uniform with respect to each processing condition is obtained and set in advance by experiments or the like. Information is stored in a memory or the like of the control unit 161 as information. The controller 161 reads out the flow conditions of the corresponding liquid 51 and liquid 52 corresponding to the processing conditions of the substrate W to be processed, and performs control by the flow controller 163.

<4. Scanning of Upper Nozzle 120 (Process Liquid 53 Supply Position)>
FIG. 10 shows that when the position of the upper nozzle 120 (that is, the supply position of the processing liquid 53) is scanned, the substrate processing apparatus 100 is changed to the liquid 51 (first liquid) according to the position of the upper nozzle 120. It is a figure which shows typically the state which fluctuates the flow volume with the liquid 52 (2nd liquid).

  As described above, the nozzle rotation mechanism 155 operates as a scanning unit that scans the upper nozzle 120 of the processing liquid supply unit 303 that discharges the processing liquid 53 onto the upper surface S1 of the substrate W above the upper surface S1 of the substrate W. You can also. In this case, the heat amount control unit 162 determines the amount of heat that the first supply unit 301 supplies to the substrate W according to the position of the upper nozzle 120 of the processing liquid supply unit 303 scanned by the nozzle rotation mechanism 155, and the first amount. 2 The ratio of the amount of heat supplied to the substrate W by the supply unit 302 is changed.

  More preferably, the flow rate control unit 163 of the heat quantity control unit 162 varies the ratio of the flow rate of the liquid 51 and the flow rate of the liquid 52 according to the position of the upper nozzle 120 being scanned by the nozzle rotation mechanism 155. Thus, the ratio of the amount of heat supplied to the substrate W by the first supply unit 301 and the amount of heat supplied to the substrate W by the second supply unit 302 is changed. That is, the flow rate control unit 163 varies the ratio of these heat amounts spatially and temporally. Since the flow rate can be varied with high responsiveness, the temperature distribution of the substrate can be changed in a shorter time even when the scanning speed of the upper nozzle 120 is fast. Even if the temperatures of the liquid 51 and the liquid 52 are changed in accordance with the scanning position of the upper nozzle 120, the usefulness of the present invention is not impaired. In the example shown in FIG. 10, when the upper nozzle 120 is located above the central area of the substrate W, the flow rate control unit 163 determines the flow rate of the liquid 51 discharged to the central area K1 of the lower surface S2 of the substrate W. In addition, the flow rate of the liquid 52 discharged to the intermediate area K2 and the peripheral area K3 of the lower surface S2 is increased. The liquids 51 and 52 in this state are shown as liquids 51a and 52a. Further, when the upper nozzle 120 is located above the peripheral area of the substrate W, the flow rate control unit 163 is discharged to the intermediate area K2 and the peripheral area K3 rather than the flow rate of the liquid 51 discharged to the central area K1. The flow rate of the liquid 52 is reduced. The liquids 51 and 52 in this state are shown as liquids 51b and 52b. Thereby, even when the upper nozzle 120 is scanned, a temperature distribution capable of suppressing variation in the processing amount of each part of the substrate W is obtained.

  According to the substrate processing apparatus according to this embodiment configured as described above, the processing liquid 53 and the liquid 51 supplied to the upper and lower surfaces of the central area of the substrate W are supplied from a common pure water supply source 131. Since the pure water 11 is mainly contained, the temperature difference between the processing liquid 53 and the liquid 51 is reduced, and the central area of the substrate W is brought close to the temperature corresponding to the desired processing amount in the thickness direction of the substrate W. Becomes easy. When the processing time of each part of the substrate is equal, the final processing amount of each part is proportional to the processing amount per unit time of each part. In addition, according to the substrate processing apparatus, the liquid 52 mainly contains the pure water 12 higher in temperature than the pure water 11 in the peripheral region and the intermediate region of the substrate W, the temperature of which is likely to drop from the central region due to the rotation of the substrate W. Is supplied, it becomes easy to make the temperature distribution in the radial direction of the substrate W uniform. Furthermore, even when the required temperature distribution in the radial direction of the substrate W is not uniform, the amount of heat supplied to the central region K1 of the lower surface S2 of the substrate W via the liquid 51 and the intermediate region K2 of the lower surface S2 via the liquid 52 are obtained. In addition, the temperature distribution in the radial direction of the substrate W can be changed by independently controlling the amount of heat supplied to the peripheral area K3. Therefore, the difference between the desired processing amount and the actual processing amount and the variation in the processing amount in each part of the substrate W are controlled by the amount of heat supplied from the two systems of the liquid 51 supply system and the liquid 52 supply system. Can be suppressed at a low cost. Further, it becomes easy to make the processing amount in the central area of the substrate W constant regardless of the processing conditions. Further, the amount of heat corresponding to a desired processing amount is adjusted by adjusting the amount of heat supplied to the peripheral region and the intermediate region via the liquid 52 on the basis of the amount of heat supplied to the central region of the substrate W via the liquid 51. It becomes easy to obtain the control conditions.

  Further, according to the substrate processing apparatus according to the present embodiment configured as described above, one pure water 11 a and the other pure water 11 b are pipes in the middle of the pipe 382 led from the pure water supply source 131. It is distributed from the pure water 11 at the branch point where 383 branches. Since the path from the pure water supply source 131 to the branch point is long, even if the amount of decrease in the temperature of the pure water 11 increases, the pure water 11a supplied to the first supply unit 301 and the second supply unit The temperature difference with the other pure water 11b supplied to 302 can be suppressed more. Therefore, it becomes easier to make the temperature difference between the processing liquid 53 and the liquid 51 smaller, and to bring the central region of the substrate W closer to the temperature according to the desired processing amount in the thickness direction of the substrate W.

  Further, according to the substrate processing apparatus according to the present embodiment configured as described above, the mixing ratio of one pure water 11a and the chemical liquid 13 in the processing liquid 53 and the other pure water 11b and the temperature adjustment in the liquid 51 are adjusted. The liquid 51 is prepared by mixing the other pure water 11b and the liquid 14 having the same temperature as the chemical liquid 13 so that the mixing ratio with the liquid 14 for use is equal. Therefore, the temperature difference between the liquid 51 and the liquid 52 can be made smaller regardless of the mixing ratio.

  Further, according to the substrate processing apparatus according to the present embodiment configured as described above, the central region K1 of the lower surface S2 of the substrate W according to the supply position of the processing liquid 53 being scanned on the upper surface S1 of the substrate W. The ratio of the amount of heat supplied to the heat amount supplied to the peripheral area K3 and the intermediate area K2 of the lower surface S2 is varied. Thereby, the temperature distribution in the radial direction of the substrate W can be made closer to the temperature distribution obtained according to the supply position of the processing liquid 53. Therefore, even when the supply position of the processing liquid 53 is scanned, it is possible to further suppress variation in processing amount in each part of the substrate W.

  Further, according to the substrate processing apparatus according to this embodiment configured as described above, the flow rate of the liquid 51 and the ratio of the liquid 52 and the flow rate vary depending on the supply position of the processing liquid 53 being scanned. Is done. Since these flow rates can be changed quickly, the responsiveness of fluctuations in the temperature distribution in the radial direction of the substrate W with respect to fluctuations in the supply position of the processing liquid 53 can be improved, and the amount of processing in each part of the substrate W is increased. The variation of the can be further suppressed.

  Although the invention has been shown and described in detail, the above description is illustrative in all aspects and not restrictive. Therefore, embodiments of the present invention can be modified or omitted as appropriate within the scope of the invention.

100 substrate processing apparatus 111 spin chuck (rotation holding unit)
113 Rotating Spindle 115 Spin Base 117 Chuck Pin 120 Upper Nozzle 155 Nozzle Rotating Mechanism (Scanning Unit)
162 Heat quantity control unit 163 Flow rate control unit 164 Temperature control unit 171 to 177 Square valve 181 to 185 Flow rate controller 191 and 192 Mixing unit 240 Lower nozzle 301 First supply unit 302 Second supply unit 303 Treatment liquid supply unit 380 Piping system 381 〜 387 Piping 11 Pure water (1st pure water)
11a Pure water (one first pure water)
11b Pure water (the other first pure water)
12 Pure water (second pure water)
13 Chemical liquid 14 Liquid 51 Liquid (first liquid)
52 Liquid (second liquid)
53 Treatment liquid a1 Rotating shaft K1 Central area K2 Intermediate area K3 Peripheral area S1 Upper surface S2 Lower surface W Substrate

Claims (10)

A rotation holding unit that rotates while holding the substrate horizontally;
A first supply source for supplying first pure water at a first temperature;
A second supply source for supplying second pure water having a second temperature higher than the first temperature;
A piping system for distributing and guiding the first pure water to one first pure water and the other first pure water;
The first pure water is supplied from the piping system, and a treatment liquid obtained by mixing the first pure water and the chemical solution so as to mainly contain the first pure water is an upper surface of the substrate. A processing liquid supply section for supplying to the central area of
A first supply unit which is supplied with the other first pure water from the piping system and supplies a first liquid mainly containing the other first pure water to a central region of the lower surface of the substrate;
The second liquid mainly containing the second pure water supplied from the second supply source is applied to each of a peripheral area on the lower surface of the substrate and an intermediate area on the lower surface between the peripheral area and the central area. A second supply section for supplying;
A heat amount control unit that independently controls the amount of heat supplied to the substrate by the first supply unit and the amount of heat supplied to the substrate by the second supply unit so that the temperature distribution in the radial direction of the substrate can be changed. When,
A substrate processing apparatus comprising: The substrate processing apparatus according to claim 1,
The piping system is
A substrate processing apparatus, which is a branch pipe having one end connected to the first supply source and branched in the middle of a pipeline. The substrate processing apparatus according to claim 1 or 2, wherein
The first supply unit includes:
The other first pure water and a liquid for temperature adjustment at the same temperature as the chemical liquid, a mixing ratio of the one first pure water and the chemical liquid in the treatment liquid, and the other in the first liquid A substrate processing apparatus for preparing the first liquid by mixing so that the mixing ratio of the first pure water and the temperature adjusting liquid is equal. A substrate processing apparatus according to any one of claims 1 to 3, wherein
By scanning a nozzle of the processing liquid supply unit that supplies the processing liquid to the upper surface of the substrate above the upper surface of the substrate, the supply position of the processing liquid on the upper surface of the substrate is determined. A scanning section that scans between the central area and the peripheral area of the upper surface;
Further comprising
The heat quantity control unit
The ratio of the amount of heat supplied to the substrate by the first supply unit and the amount of heat supplied to the substrate by the second supply unit according to the position of the nozzle of the processing liquid supply unit being scanned by the scanning unit. Substrate processing equipment that fluctuates. The substrate processing apparatus according to claim 4,
The heat quantity control unit
The nozzle of the processing liquid supply unit being scanned by the scanning unit for the ratio of the flow rate of the first liquid supplied by the first supply unit and the flow rate of the second liquid supplied by the second supply unit. A substrate processing apparatus that varies depending on the position of the substrate. A rotation holding step for rotating the substrate while holding it horizontally;
A distribution step of distributing and guiding the first pure water to one first pure water and the other first pure water from a supply source supplying first pure water at a first temperature;
A process of supplying a processing liquid in which the one first pure water and the chemical liquid are mixed so as to mainly include the one first pure water to a central area of the upper surface of the substrate in parallel with the rotation holding step. A liquid supply step;
A first supply step of supplying a first liquid mainly containing the other first pure water to a central region of the lower surface of the substrate in parallel with the treatment liquid supply step;
A second liquid mainly containing second pure water having a second temperature higher than the first temperature, in parallel with the treatment liquid supply step and the treatment liquid supply step; A second supply step for supplying each of the intermediate area of the lower surface between the peripheral area and the central area;
The amount of heat for independently controlling the amount of heat supplied to the substrate by the first supply step and the amount of heat supplied to the substrate by the second supply step so that the temperature distribution in the radial direction of the substrate can be changed. Control steps;
A substrate processing method. The substrate processing method according to claim 6, comprising:
The distributing step includes
A substrate processing method, which is a step of distributing the first pure water to the one first pure water and the other first pure water in the middle of a path for guiding the first pure water from the supply source. The substrate processing method according to claim 6 or 7, wherein
The first supply step includes
The other first pure water and a liquid for temperature adjustment at the same temperature as the chemical liquid, a mixing ratio of the one first pure water and the chemical liquid in the treatment liquid, and the other in the first liquid A substrate processing method comprising a preparation step of preparing the first liquid by mixing so that a mixing ratio of the first pure water and the temperature adjusting liquid is equal. A substrate processing method according to any one of claims 6 to 8, comprising:
A scanning step of scanning a supply position of the processing liquid supplied to the upper surface of the substrate in the processing liquid supply step between a central area and a peripheral area of the upper surface of the substrate;
Further comprising
The heat quantity control step includes
A ratio between the amount of heat supplied to the substrate by the first supply step and the amount of heat supplied to the substrate by the second supply step according to the supply position of the processing liquid being scanned in the scanning step. A substrate processing method to be varied. The substrate processing method according to claim 9, comprising:
The heat quantity control step includes
Supply of the processing liquid being scanned in the scanning step based on the ratio between the flow rate of the first liquid supplied in the first supply step and the flow rate of the second liquid supplied in the second supply step A substrate processing method, which is a step of changing according to a position.

Images