TW201842536A - Substrate processing apparatus, substrate processing system and substrate processing method - Google Patents

Abstract

The present invention provides a substrate processing apparatus capable of suppressing an increase in size by performing a plurality of processes using ultraviolet rays. The substrate processing apparatus has an ultraviolet irradiation device (2) and substrate holding devices (31, 32). The ultraviolet irradiation device 2 is located at the boundary of the processing chambers (11, 12) and is capable of irradiating the processing chambers (11, 12) with ultraviolet rays. The substrate holding device 31 is disposed in the processing chamber (11), and holds the substrate in opposition to the ultraviolet irradiation device (2). The substrate holding device (32) is disposed in the processing chamber (12) to hold the substrate against the ultraviolet irradiation device (2).

Description

   Substrate processing device, substrate processing system, and substrate processing method   

The present invention relates to a substrate processing apparatus, a substrate processing system, and a substrate processing method.

Conventionally, in a manufacturing process of a semiconductor substrate (hereinafter simply referred to as a "substrate"), various processes are applied to a substrate having an insulating film such as an oxide film using a substrate processing apparatus. For example, a processing liquid is supplied to a substrate on which a pattern of a resist is formed on the surface, thereby performing a process such as etching on the surface of the substrate. In addition, after the etching and the like, a process for removing the resist on the substrate is also performed.

Before being transferred to the substrate processing apparatus, a dry process such as dry etching or plasma CVD (Chemical Vapor Deposition) is performed on the substrate used for processing in the substrate processing apparatus. In such a dry process, the substrate is charged into the substrate processing apparatus (so-called holding charging) while the substrate is charged because charges are generated in the device. Next, in a substrate processing apparatus, when a processing solution having a low specific resistance, such as SPM (sulfuric acid / hydrogen peroxide mixture), is supplied to the substrate, the charge in the device may be rapidly charged. The slave device moves toward the processing liquid (that is, discharges into the processing liquid), and the device may be damaged due to the heat generated by the movement.

Therefore, conventionally, a charging prevention device for preventing the substrate from being charged (for example, Patent Document 1) has been used. This antistatic device includes a gas supply path and an irradiation unit. The irradiation unit irradiates ultraviolet rays to the glass substrate. The gas supply path is connected to a space between the glass substrate and the irradiation section. An oxygen-containing gas system is supplied to the space through the gas supply path. In this state, the glass substrate is irradiated with ultraviolet rays, whereby the surface of the glass substrate is hydrophilized to prevent the glass substrate from being charged. The oxygen in the space is changed into ozone by the ultraviolet rays. The ozone promotes hydrophilicity of the glass substrate.

Moreover, in semiconductor manufacturing, the surface of a substrate is processed using the processing liquid. Depending on the type of the processing liquid, an organic substance contained in the processing liquid may be left on the substrate as an impurity.

Therefore, conventionally, a device for removing organic matter on a substrate using ultraviolet rays is also used (for example, Patent Document 2). In Patent Document 2, an excimer lamp is used. This excimer lamp is capable of irradiating ultraviolet rays having a wavelength of, for example, 172 nm. An excimer lamp irradiates ultraviolet rays to a substrate on which an organic substance is adhered. Thereby, organic matter on the substrate is decomposed and removed.

In addition, Patent Documents 3 to 7 are cited as technologies related to the present invention.

[Prior technical literature]

[Patent Literature]

Patent Document 1: Japanese Patent Application Laid-Open No. 2008-60221.

Patent Document 2: Japanese Patent Application Laid-Open No. 2011-204944.

Patent Document 3: Japanese Patent Application Laid-Open No. 7-22530.

Patent Document 4: Japanese Patent Application Laid-Open No. 2011-233774.

Patent Document 5: Japanese Patent Application Laid-Open No. 2011-129583.

Patent Document 6: Japanese Patent Application Laid-Open No. 2010-251596.

Patent Document 7: Japanese Patent Application Laid-Open No. 2011-124410.

When two processing chambers are formed in a substrate processing apparatus, and both a substrate holding portion and an ultraviolet light source are provided in each processing chamber, the overall size of the apparatus is increased.

The present invention has been made in view of the above-mentioned problems, and an object thereof is to provide a substrate processing apparatus capable of performing a plurality of processes using ultraviolet rays and suppressing an increase in size.

In order to solve the above problems, the substrate processing apparatus of the first aspect includes an ultraviolet irradiation means, a first substrate holding means, and a second substrate holding means. The ultraviolet irradiation means is located at the boundary between the first processing chamber and the second processing chamber, and the ultraviolet rays can be irradiated toward the first processing chamber and the second processing chamber. The first substrate holding means is disposed in the first processing chamber, and holds the substrate so as to face the ultraviolet irradiation means. The second substrate holding means is disposed in the second processing chamber, and holds the substrate so as to face the ultraviolet irradiation means.

The substrate processing apparatus of the second aspect is the substrate processing apparatus described in the first aspect, and further includes a light shielding means and a gas supply means. The light-shielding means is arranged to separate a space between the ultraviolet irradiation means and the second substrate holding means into a first space on the ultraviolet irradiation means side and a second space on the second substrate holding means side, and is used to Blocks the ultraviolet rays from the ultraviolet irradiation means and communicates the atmosphere in the first space with the atmosphere in the second space. The gas supply means supplies gas to the second processing chamber.

The substrate processing apparatus of the third aspect is the substrate processing apparatus described in the second aspect, wherein the light-shielding means includes a first plate portion and a second plate portion, and has a light-shielding property against ultraviolet rays. At least one first through hole is formed in the first plate portion. At least one second through hole is formed in the second plate portion. The first plate portion and the second plate portion are arranged so as to face each other with an arrangement relationship where the positions of at least one first through hole and the position of at least one second through hole are staggered from each other in a direction parallel to the respective plate surfaces. .

The substrate processing apparatus of the fourth aspect is the substrate processing apparatus described in the third aspect, and further includes a first moving means. The first moving means relatively moves the first plate portion and the second plate portion between a first position and a second position. The first position is at least one first through-hole and at least one second through-hole staggered from each other. The second position is a position where at least one first through hole and at least one second through hole are positionally integrated with each other.

The substrate processing apparatus of the fifth aspect is the substrate processing apparatus described in the fourth aspect, wherein at least one first through-hole system includes a plurality of first through-holes, and at least one second through-hole system includes a plurality of first through-holes. Two through holes. In the aforementioned second position, the plurality of first through-holes and the plurality of second through-holes face each other one-to-one.

The substrate processing apparatus of the sixth aspect is the substrate processing apparatus described in any one of the third aspect to the fifth aspect, further including a third substrate holding means; the third substrate holding means is a light shielding means. The substrate is held facing the ultraviolet irradiation means so as to face the ultraviolet irradiation means.

The substrate processing apparatus according to the seventh aspect is the substrate processing apparatus according to the first aspect, and includes a first gas supply means and a second gas supply means. The first gas supply means supplies gas to the first processing chamber. The second gas supply means supplies gas to the second processing chamber.

An eighth aspect of the substrate processing apparatus is the substrate processing apparatus according to the seventh aspect, wherein at least one of the first gas supply means and the second gas supply means selectively supplies a plurality of types of gases.

The substrate processing apparatus of the ninth aspect is the substrate processing apparatus described in any one of the first aspect to the eighth aspect, and further includes at least one reflection means and a second moving means. The at least one reflection means is disposed in at least one of the first processing chamber and the second processing chamber, and reflects ultraviolet rays from the ultraviolet irradiation means toward the other. The second moving means moves at least one reflection means between a position where the at least one reflection means faces the ultraviolet irradiation means and a position where the at least one reflection means does not face the ultraviolet irradiation means.

The tenth aspect of the substrate processing apparatus is the substrate processing apparatus described in any one of the first aspect to the ninth aspect, and further includes a fourth substrate holding means. The fourth substrate holding means holds the substrate on which the low-dielectric film is formed between the second substrate holding means and the ultraviolet irradiation means so as to face the ultraviolet irradiation means.

The substrate processing apparatus of the eleventh aspect is the substrate processing apparatus described in any one of the first aspect to the tenth aspect, wherein the first substrate holding means is a substrate processing device having a low dielectric film formed thereon. The substrate with one main surface and the second main surface on which the low-dielectric film is not formed is held with the second main surface facing the ultraviolet irradiation means.

The twelfth aspect of the substrate processing system is provided with: a container holding section for holding a container for accommodating a substrate; a substrate processing section for processing a substrate using a processing liquid; and a substrate passing section , Passing a substrate back and forth between the container holding portion and the substrate processing portion. A substrate processing apparatus described in any one of the first aspect to the eleventh aspect is provided in the substrate passing portion.

The thirteenth aspect of the substrate processing system is the substrate processing system described in the twelfth aspect, and includes a first conveyance means and a second conveyance means. The first conveyance means transfers the substrate between each of the first substrate holding means and the second substrate holding means and the container holding portion. The second conveyance means transfers the substrate between each of the first substrate holding means and the second substrate holding means and the substrate processing unit.

The fourteenth aspect of the substrate processing system is the substrate processing system described in the thirteenth aspect, wherein the first conveyance means transfers the substrate from the container holding section to the first substrate holding means and the second substrate holding means. One of them transfers the substrate from the other of the first substrate holding means and the second substrate holding means to the container holding portion. The second conveyance means transfers the substrate from one of the first substrate holding means and the second substrate holding means to the substrate processing section, and transfers the substrate from the substrate processing section to the first substrate holding means and the second substrate holding method. The other.

A fifteenth aspect of the substrate processing method includes: facing the first processing chamber and the second processing chamber with an ultraviolet irradiating means which can irradiate ultraviolet rays to the first processing chamber and the second processing chamber; A step of holding a substrate in a first substrate holding means in the first processing chamber; a step of holding a substrate in a second substrate holding means in a manner opposite to the ultraviolet irradiation means in the second processing chamber; A step of supplying a gas in a first space between the means and the ultraviolet irradiation means, and the light shielding means separates a space between the ultraviolet irradiation means and the second substrate holding means into a first space on the ultraviolet irradiation means side It is arranged in a manner similar to the second space on the second substrate holding means side, and communicates the atmosphere in the first space with the atmosphere in the second space while blocking ultraviolet rays from the ultraviolet irradiation means.

The sixteenth aspect of the substrate processing method is the substrate processing method described in the fifteenth aspect, wherein the light shielding means includes a first plate portion and a second plate portion having a light shielding property against ultraviolet rays; At least one first through hole is formed in the second portion; at least one second through hole is formed in the second plate portion; the first plate portion and the second plate portion are at the position of the at least one first through hole and the at least one The position of one second through hole is arranged in a direction parallel to each of the plate surfaces, and the arrangement relationship is shifted from each other so as to face each other at intervals.

The seventeenth aspect of the substrate processing method is the substrate processing method as described in the sixteenth aspect, further including the first plate portion and the second plate portion facing each other between the first position and the second position. The first position is a position where the at least one first through hole and the at least one second through hole are staggered from each other, and the second position is the at least one first through hole and the at least one second through hole. Position where the holes are positionally integrated with each other.

The eighteenth aspect of the substrate processing method is the substrate processing method described in the seventeenth aspect, wherein the at least one first through-hole system includes a plurality of first through-holes; the at least one second through-hole system includes There are a plurality of second through-holes; in the second position, the plurality of first through-holes and the plurality of second through-holes face each other one-to-one.

The nineteenth aspect of the substrate processing method is the substrate processing method as described in the sixteenth aspect, further comprising providing the first and second light-shielding means and the ultraviolet-ray irradiating means so as to face the ultraviolet-ray irradiating means. Three substrate holding means is a step of holding a substrate.

The twentieth aspect of the substrate processing method is the substrate processing method described in the fifteenth aspect, and includes a step of supplying a gas to the first processing chamber and a step of supplying a gas to the second processing chamber.

According to the substrate processing apparatus, processing using ultraviolet rays can be performed in the first processing chamber and the second processing chamber. In addition, the first processing chamber and the second processing chamber can share the ultraviolet irradiation means. Therefore, the size of a substrate processing apparatus can be reduced compared with the case where an ultraviolet irradiation means is arrange | positioned individually in a 1st processing chamber and a 2nd processing chamber.

1‧‧‧ chamber

2‧‧‧Ultraviolet irradiation means (ultraviolet irradiator)

5‧‧‧ Shading means (shading section)

7‧‧‧Control Department

8‧‧‧ Mobile means (mobile mechanism)

10, 10A, 10B, 10C, 10D‧‧‧ substrate processing equipment

11, 12‧‧‧ treatment room

11a, 11b, 12a, 12b, 511, 512‧‧‧through holes

12A, 12B‧‧‧Space

31 to 33‧‧‧ substrate holding means (substrate holding section)

41, 42‧‧‧ Gas supply means (gas supply department)

51, 52‧‧‧ Board

61, 62‧‧‧ exhaust

91, 92‧‧‧Reflection means (Reflection Department)

93, 94‧‧‧ mobile means (mobile mechanism)

100‧‧‧ substrate processing system

110‧‧‧Receiving container holding section

120‧‧‧ Substrate passing section

121‧‧‧Transportation method (index robot)

122‧‧‧Transportation Department

123‧‧‧Transportation means (transport robot)

124‧‧‧Transportation path

130, 130a to 130d‧‧‧ substrate processing department

411 to 413, 421 to 423, 611, 621‧‧‧ Piping

414, 415, 424, 425‧‧‧ gas container

416, 417, 426, 427‧‧‧ on / off valve

511, 521‧‧‧through holes

Ga, Gb‧‧‧Quartz glass plate

R0, R11 to R13, R21 to R23‧‧‧ curves

W1, W2‧‧‧ substrate

FIG. 1 is a diagram schematically showing an example of a configuration of a substrate processing system.

FIG. 2 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

FIG. 3 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

FIG. 4 is a diagram schematically showing an example of a configuration of a light shielding portion.

FIG. 5 is a flowchart showing an example of the operation of the substrate processing system.

FIG. 6 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

FIG. 7 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

FIG. 8 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

Fig. 9 is a diagram schematically showing an example of the configuration of a substrate processing apparatus.

FIG. 10 is a flowchart showing an example of the operation of the substrate processing system.

FIG. 11 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

FIG. 12 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

FIG. 13 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

FIG. 14 is a graph showing an example of the relationship between the absorptivity of the low-dielectric film and the wave number.

FIG. 15 is a graph showing an example of the relationship between the absorptivity of the low-dielectric film and the wave number.

FIG. 16 is a graph showing an example of the relationship between the surface charge and the irradiation time.

FIG. 17 is a graph showing an example of the relationship between the surface charge and the irradiation time.

FIG. 18 is a diagram schematically showing an example of a configuration of a substrate processing apparatus.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

[First Embodiment]

<An example of the overall configuration of a substrate processing system>

FIG. 1 is a diagram schematically showing an example of the overall configuration of the substrate processing system 100. In addition, in each of FIG. 1 and subsequent drawings, in order to facilitate understanding, the size and number of each part are exaggerated or simplified as necessary.

The substrate processing system 100 is a device for applying various processes to a semiconductor substrate. The substrate processing system 100 includes, for example, a container holding section 110, a substrate passing section 120, and a substrate processing section 130. The container holding section 110 holds a substrate container. A plurality of substrates are housed in the substrate container. In the example of FIG. 1, a plurality of storage container holding portions 110 are provided, and the plurality of storage container holding portions 110 are arranged in a direction parallel to a horizontal plane (hereinafter also referred to as the X direction).

The substrate processing unit 130 is a device for applying a predetermined process to a substrate. In the example of FIG. 1, a plurality of substrate processing units 130 (in the example of the drawings, the substrate processing unit 130 a to the substrate processing unit 130 d) are provided. The substrate processing unit 130a to the substrate processing unit 130d perform various processes on the substrate, respectively. For convenience of explanation, a case where each substrate is processed in the order of the substrate processing section 130a to the substrate processing section 130d is assumed. For example, the substrate processing unit 130a supplies a substrate with a processing liquid (a processing liquid such as a chemical liquid, a cleaning liquid, or an IPA (isopropyl alcohol) liquid). Thereby, the substrate is processed in accordance with the processing liquid. For subsequent processing in the substrate processing unit 130c, it is not desirable to accumulate charges on the substrate. In addition, because the substrate processing unit 130b processes (for example, a process using IPA), there may be an organic substance remaining as an impurity on the main surface of the substrate, and it is desirable to remove such an organic substance.

The substrate passing portion 120 is located between the container holding portion 110 and each of the substrate processing portion 130a to 130d. The unprocessed substrate is transferred from the container holding section 110 to the substrate processing section 130 a through the substrate passing section 120. The processed substrate subjected to the processing in the substrate processing unit 130a is transferred from the substrate processing unit 130a to the container holding unit 110 or another substrate processing unit 130b via the substrate passing unit 120. The same applies to the chronological transfer of substrates between the substrate processing unit 130b and the substrate processing unit 130d.

The board | substrate passing part 120 is provided with the indexer robot 121, the pass part 122, and the conveyance robot 123, for example. The indexing robot 121 can move back and forth in the X direction on an indexing conveyance path 124 described below. The index conveyance path 124 is a conveyance path adjacent to each of the plurality of storage container holding portions 110 and extending in the X direction. The indexing robot 121 can stop in the index conveying path 124 at a position facing each of the container holding units 110.

The indexing robot 121 includes, for example, an arm and a hand. The hand is provided at the front end of the arm, and can hold or release the held substrate. The hand system can be moved back and forth in a direction parallel to the horizontal plane and perpendicular to the X direction (hereinafter also referred to as the Y direction) by the drive of the arm. The indexing robot 121 can move the hand toward the receiving container holding portion 110 in a state facing the receiving container holding portion 110, and take out the unprocessed substrate from the receiving container holding portion 110 or transfer the processed substrate to the receiving container holding部 110。 110.

The passage portion 122 is located on the side opposite to the storage container holding portion 110 with respect to the index conveyance path 124. For example, the passage portion 122 may be formed at a position facing the central portion in the X direction of the index conveyance path 124. For example, the passage portion 122 may include a mounting table or a mounting table for mounting a substrate. The indexing robot 121 can rotate the arm 180 degrees in the horizontal plane. Thereby, the indexing robot 121 can move a hand toward the passage part 122. The indexing robot 121 is capable of transferring the substrate taken out from the container holding section 110 to the transit section 122 or taking out the substrate placed on the transit section 122 from the transit section 122.

The conveyance robot 123 is provided on the side opposite to the index conveyance path 124 with respect to the passage portion 122. A plurality of (four in FIG. 1) substrate processing units 130 are arranged so as to surround the transfer robot 123. In the example of FIG. 1, a fluid tank portion 131 adjacent to each of the substrate processing portions 130 is provided. The fluid tank portion 131 is capable of supplying a processing liquid to the adjacent substrate processing portion 130 and recovering the used processing liquid from the substrate processing portion 130.

The transfer robot 123 has an arm portion and a hand portion similarly to the index robot 121. The transfer robot 123 is capable of taking out a substrate from the passage portion 122 or transferring the substrate to the passage portion 122. In addition, the transfer robot 123 is capable of transferring a substrate to or removing a substrate from each substrate processing unit 130. In addition, the index robot 121 and the transfer robot 123 can be regarded as a transfer means for transferring a substrate.

With these configurations, for example, the following general operations can be performed. That is, each semiconductor substrate stored in the container holding section 110 is sequentially transferred to the passage section 122 by the index robot 121. Next, the substrate is sequentially transferred to the substrate processing unit 130a to the substrate processing unit 130d by the transfer robot 123, and undergoes various processes in the substrate processing unit 130a to the substrate processing unit 130d. The substrate that has completed a series of processing is returned to the container holding section 110 by the passage section 122 and the index robot 121.

<Substrate Processing Device>

2 and 3 are diagrams schematically showing an example of the configuration of the substrate processing apparatus 10. The substrate processing apparatus 10 may be installed in, for example, the passage portion 122. FIG. 2 shows, for example, a cross section perpendicular to the Y direction, and FIG. 3 shows, for example, a cross section perpendicular to the X direction. In addition, the substrate processing apparatus 10 does not necessarily need to be provided in the passage portion 122, and may be provided as the substrate processing portion 130d, for example. In other words, the substrate processing apparatus 10 may be provided as a part of the plurality of substrate processing units 130.

The substrate processing apparatus 10 includes a chamber 1, an ultraviolet irradiator 2, substrate holding portions 31 and 32, gas supply portions 41 and 42, a light shielding portion 5, and exhaust portions 61 and 62.

The chamber 1 includes processing chambers 11 and 12. The processing chambers 11 and 12 are formed adjacent to each other in the vertical direction (hereinafter also referred to as the Z direction), for example. An ultraviolet irradiator 2 is provided at a boundary between the processing chambers 11 and 12. That is, the processing chambers 11 and 12 are partitioned by the ultraviolet irradiator 2.

The ultraviolet irradiator 2 generates ultraviolet rays and can irradiate the ultraviolet rays to any one of the processing chambers 11 and 12. As the ultraviolet irradiator 2, for example, an excimer UV (Ultra Violet) lamp can be used. The ultraviolet irradiator 2 includes, for example, a quartz tube filled with a discharge gas (such as a rare gas or a rare gas halogen compound), and a pair of electrodes housed in the quartz tube. A gas system for discharge exists between a pair of electrodes. A high voltage is applied between a pair of electrodes at a high frequency, whereby the discharge gas is excited and becomes an excimer state. The discharge gas system generates ultraviolet rays when returning from an excimer state to a substrate state.

The ultraviolet irradiator 2 may be formed in a flat plate shape, for example. The ultraviolet irradiator 2 is arranged in a posture in which the normal direction of the ultraviolet irradiator 2 is along the Z direction, for example. In other words, the ultraviolet irradiator 2 is a surface light source arranged horizontally. Alternatively, the ultraviolet irradiator 2 may be provided as an array of a plurality of cylindrical ultraviolet irradiators. For example, each of the plurality of ultraviolet unit irradiators is arranged in a posture in which the central axis of the ultraviolet unit irradiator is along the X direction. In this case, a plurality of ultraviolet unit irradiators are arranged in a line along the Y direction. That is, in this aspect, a substantial surface light source is configured by arranging a plurality of ultraviolet unit irradiators horizontally.

It is also possible to provide quartz glass plates Ga and Gb for protection on the processing chambers 11 and 12 sides of the ultraviolet irradiator 2, respectively. That is, the ultraviolet irradiator 2 may be located between a pair of quartz glass plates Ga and Gb, which are plate-like bodies. The pair of quartz glass plates Ga and Gb have heat resistance and corrosion resistance, and are transparent to ultraviolet rays. . These quartz glass plates Ga and Gb can protect the ultraviolet irradiator 2 from external forces and the atmosphere inside the processing chambers 11 and 12.

One substrate holding portion 31 is arranged in the first processing chamber 11. The substrate holding portion 31 holds the substrate W1 so that the main surface of the substrate W1 faces the ultraviolet irradiator 2. In the case where the substrate W1 is a semiconductor substrate (that is, a semiconductor wafer), the substrate W1 is a substantially circular flat plate shape, and the substrate holding portion 31 holds the substrate W1 horizontally so as to support an outer edge portion of the substrate W1.

The specific structure of the substrate holding portion 31 is not particularly limited, but may be formed on the inner side surface of the chamber 1, for example. In the example of FIG. 2, groove-shaped recesses are formed in a pair of inner side surfaces of the inner side surface of the chamber 1 that face each other. These recesses are formed at approximately the same height in the Z direction. Further, both end portions in the diameter direction of the substrate W1 enter the recessed portions, respectively. The substrate W1 is supported on a surface directly below the recessed portion. That is, the recessed portion functions as the substrate holding portion 31.

The other substrate holding portion 32 is provided in the second processing chamber 12. The substrate holding portion 32 holds the substrate W2 so that the main surface of the substrate W2 faces the ultraviolet irradiator 2. The substrate W2 also has a flat circular shape, for example. The substrate holding portion 32 also holds the substrate W2 horizontally. The specific structure of the substrate holding portion 32 is not particularly limited, but may have, for example, the same structure as the substrate holding portion 31.

The gas supply unit 41 shown in FIG. 3 supplies gas to the first processing chamber 11. The gas supply section 41 includes, for example, piping 411 to 413, gas storage sections 414 and 415, and on-off valves 416 and 417. A supply through-hole 11 a is formed in, for example, a side wall of the chamber 1. The through-hole 11a connects one end of the processing chamber 11 and the pipe 411. The other ends of the pipes 411 are connected to one ends of the pipes 412 and 413, respectively. The other end of the pipe 412 is connected to the gas container 414, and the other end of the pipe 413 is connected to the gas container 415. The gas accommodating portions 414 and 415 are, for example, bottles, and respectively store different gases. For example, an inert gas (such as nitrogen or argon) is stored in the gas storage portion 414, and oxygen is stored in the gas storage portion 415. Alternatively, each of the gas storage sections 414 and 415 may contain a mixed gas including a plurality of types of gas components. For example, air containing oxygen and nitrogen may be contained in the gas containing portions 414 and 415, respectively. The mixing ratio of the air containing oxygen and nitrogen may be different in the gas containing portions 414 and 415. An on-off valve 416 is provided on the piping 412, and an on-off valve 417 is provided on the piping 413. The on-off valves 416 and 417 switch the opening and closing of the pipes 412 and 413, respectively.

For example, when the on-off valve 416 is opened and the on-off valve 417 is closed, a gas (for example, nitrogen) stored in the gas storage portion 414 is supplied to the processing chamber 11. On the other hand, when the on-off valve 416 is closed and the on-off valve 417 is opened, a gas (for example, oxygen) contained in the gas storage portion 415 is supplied to the processing chamber 11.

The exhaust portion 61 includes a pipe 611. A through-hole 11 b for exhaust is formed in, for example, a side wall of the chamber 1. The through-hole 11 b connects one end of the processing chamber 11 and the pipe 611. The gas system in the processing chamber 11 is exhausted to the outside through a pipe 611.

The gas supply unit 42 supplies gas to the processing chamber 12. The gas supply unit 42 is provided with pipes 421 to 423, gas storage units 424 and 425, and on-off valves 426 and 427. The pipes 421 to 423, the gas containing portions 424 and 425, and the on-off valves 426 and 427 are connected to the pipes 411 to 413, the gas containing portions 414 and 415, and the on-off valves 416 and 416, in addition to the communication destination of one end of the pipe 421, 417 is the same. One end of the pipe 421 is connected to the through-hole 12a for air supply. The through hole 12 a is formed in, for example, a side wall of the chamber 1, and communicates with one end of the pipe 421 and the processing chamber 12.

The gas supply unit 42 can also appropriately control the opening and closing of the on-off valves 426 and 427 to selectively supply different gases (for example, an inert gas (such as nitrogen or argon) and oxygen) to the processing chamber 12.

The exhaust portion 62 includes a pipe 621. A through-hole 12 b for exhaust is formed in, for example, a side wall of the chamber 1. The through-hole 12b connects one end of the processing chamber 12 and the pipe 621. The gas system in the processing chamber 12 is exhausted to the outside through a pipe 621.

The light shielding portion 5 is disposed in the processing chamber 12. More specifically, the light shielding portion 5 is disposed so as to partition a space between the ultraviolet irradiator 2 and the substrate W2 into a space on the ultraviolet irradiator 2 side and a space on the substrate holding portion 32 side. In other words, the substrate holding portion 32 holds the substrate W2 so that the main surface of the substrate W2 faces the ultraviolet ray irradiator 2 through the light shielding portion 5. The light shielding portion 5 is appropriately fixed to the chamber 1.

The light-shielding section 5 shields ultraviolet rays and allows gas to pass through. The light shielding portion 5 includes plate portions 51 and 52. FIG. 4 is a diagram schematically showing a configuration of a part of the light shielding portion 5 when viewed in the Z direction. The plate portions 51 and 52 have a plate-like shape. In addition, through-holes 511 and 521 are formed in the plate portions 51 and 52, respectively. The through holes 511 and 521 penetrate the plate portions 51 and 52 along the thickness direction of the plate portions 51 and 52, respectively. The plate portions 51 and 52 have a light-shielding property against ultraviolet rays. For example, a filter for shielding light from ultraviolet rays may be provided on the surfaces of the plate portions 51 and 52. However, this filter is not provided in the through holes 511 and 521.

These plate parts 51 and 52 are arrange | positioned so that the thickness direction of the plate parts 51 and 52 may be along the Z direction. That is, the plate portions 51 and 52 are arranged horizontally. The plate portions 51 and 52 are arranged to face each other with an interval therebetween. The plate portion 51 is disposed on the side of the ultraviolet irradiator 2 with respect to the plate portion 52. In the example of FIG. 4, a plurality of through holes 511 and 521 are formed. The plurality of through holes 511 are formed at the following positions. That is, through-holes 511 are formed at each of the four vertices of an imaginary quadrangle and the center of gravity of the quadrangle, and a plurality of through-holes 511 are dispersedly formed so that the positional relationship is repeated in the X and Y directions. The same applies to the plurality of through holes 521.

The plate portions 51 and 52 are arranged so that the positions of the through holes 511 and the positions of the through holes 521 are staggered from each other in a direction parallel to the plate surfaces of the plate portions 51 and 52. That is, the plate portions 51 and 52 are arranged so that each of the through holes 511 and each of the through holes 521 do not face each other in the Z direction.

The space 12A between the light shielding portion 5 and the ultraviolet irradiator 2 and the space 12B between the light shielding portion 5 and the substrate W2 are communicated through the light shielding portion 5. Specifically, the spaces 12A and 12B communicate with each other through the spaces between the through holes 511 and 521 and the plate portions 51 and 52. Accordingly, the air system can flow from the space 12A to the space 12B through the light shielding portion 5.

On the other hand, since the positions of the through holes 511 and 521 are shifted from each other, the ultraviolet rays from the ultraviolet irradiator 2 are blocked by the light shielding portion 5. Specifically, part of the ultraviolet rays from the ultraviolet irradiator 2 is blocked by the plate portion 51, and the other portion of the ultraviolet rays passes through the through hole 511 but is blocked by the plate portion 52. Therefore, it is difficult to irradiate ultraviolet rays to the main surface of the substrate W2. That is, the light-shielding portion 5 is a plate-like element that is light-shielding and air-permeable.

In the example of FIG. 3, the through-hole 12 a for supplying gas is provided at a position suitable for supplying gas to the space 12A. Since the space 12A is irradiated with ultraviolet rays from the ultraviolet irradiator 2, the ultraviolet rays can be effectively applied to the gas supplied from the gas supply unit 42. In the case where oxygen is supplied from the gas supply unit 42, since ultraviolet rays are effectively applied to oxygen, ozone can be efficiently generated. This ozone is applied to the substrate W2 through the light shielding portion 5.

Further, a shutter (not shown) is provided in the chamber 1 and functions as an entrance and exit for the substrates W1 and W2. When the shutter is opened, the processing chambers 11 and 12 communicate with the outside, and when the shutter is closed, the processing chambers 11 and 12 are sealed. The shutters may be provided individually for the processing chambers 11 and 12. That is, the processing chamber 11 may be communicated with the outside by opening the first door, and the processing chamber 12 may be communicated with the outside by opening the second door.

In addition, in a case where the substrate processing apparatus 10 is disposed in the passage portion 122, for example, a shutter for the index robot 121 and a shutter for the transport robot 123 may be provided. The index robot 121 and the transfer robot 123 are capable of carrying a substrate out or in through a corresponding door. In addition, the index robot 121 and the transfer robot 123 can move the arm and the handle back and forth in the Z direction, respectively. Accordingly, the index robot 121 and the transfer robot 123 can move the arm portion and the handle to a height suitable for the substrate holding portions 31 and 32, respectively. Thereby, the index robot 121 and the transfer robot 123 can transfer a board | substrate to each of the board | substrate holding parts 31 and 32, and take out a board | substrate from each of the board | substrate holding parts 31 and 32.

The ultraviolet irradiator 2, the on-off valves 416, 417, 426, 427, and the shutter system are controlled by the control unit 7.

The control unit 7 may be an electronic circuit device and includes, for example, a data processing device and a storage medium. The data processing device may also be an arithmetic processing device such as a CPU (Central Processor Unit; central processing unit). The memory section may also be provided with a non-transitory memory medium (for example, ROM (Read Only Memory) or hard disk) and a temporary memory medium (for example, Random Access Memory (RAM)) . A program may be stored in a non-transitory storage medium, and the program is used to specify a process to be executed by the control unit 7, for example. When the program is executed by the processing device, the control unit 7 can execute the processing prescribed by the program. Of course, part or all of the processing executed by the hard disk execution control unit 7 may be used.

According to such a substrate processing apparatus 10, the processing using the ultraviolet rays with respect to a substrate can be performed in the processing chambers 11 and 12, respectively. The ultraviolet irradiator 2 can irradiate ultraviolet rays to each of the processing chambers 11 and 12. That is, the ultraviolet irradiator 2 is shared by the processing chambers 11 and 12. Therefore, compared with the case where the individual ultraviolet irradiators 2 are provided in the processing chambers 11 and 12, the size of the substrate processing apparatus 10 can be reduced and the manufacturing cost can be reduced.

<An example of the operation of substrate processing>

Next, an example of a specific operation in the substrate processing apparatus 10 will be described. FIG. 5 is a flowchart showing an example of specific operations of the substrate processing apparatus 10. FIG. 5 illustrates an example of the operation when the processing in the processing chambers 11 and 12 is performed in parallel. First, in step S1, the substrates W1 and W2 are arranged in the chamber 1. Specifically, the control unit 7 controls the shutter and the index robot 121 or the transport robot 123 so as to perform the following operations. That is, the shutter of the chamber 1 is opened, and the substrates W1 and W2 are respectively arranged on the substrate holding portions 31 and 32 through the opened shutter, and the shutter is closed.

Next, in step S2, the control unit 7 opens the on-off valves 416 and 427 and closes the on-off valves 417 and 426, for example. Thereby, a gas (here, nitrogen) stored in the gas storage section 414 is supplied to the processing chamber 11, and a gas (here, oxygen) stored in the gas storage section 425 is supplied to the processing chamber 12. In addition, step S2 may be performed before step S1.

Next, in step S3, the control unit 7 causes the ultraviolet irradiator 2 to irradiate ultraviolet rays. In addition, the control unit 7 may execute step S3 when the atmosphere in the processing chambers 11 and 12 (especially the air between each of the substrates W1 and W2 and the ultraviolet irradiator 2) becomes a predetermined atmosphere. For example, the control unit 7 counts the elapsed time from step S2. The elapsed time can be measured by a timing circuit such as a timer circuit. The control unit 7 may also determine whether the elapsed time is greater than a predetermined reference value, and execute a step S3 when a positive determination is made. Alternatively, the atmosphere in the processing chambers 11 and 12 may be measured.

FIG. 6 schematically shows a state of the substrate processing apparatus 10 in step S3. In FIG. 6, the state where the ultraviolet irradiator 2 irradiates the processing chambers 11 and 12 with ultraviolet rays is shown by double arrows.

This ultraviolet light is irradiated to the main surface of the substrate W1 in the processing chamber 11. Thereby, the electric charge accumulated in the substrate W1 is removed. One of the reasons for the removal of the electric charge is considered to be that a photovoltaic effect due to ultraviolet rays is generated in the substrate W1. As the wavelength of ultraviolet rays, for example, a wavelength of 252 nm or less can be used. In this wavelength range, the charge of the substrate W1 can be effectively removed. As a more effective wavelength, a wavelength within 172 ± 20 nm can be used.

The ultraviolet rays from the ultraviolet irradiator 2 are also irradiated to the processing chamber 12. This ultraviolet light is absorbed by the oxygen between the ultraviolet irradiator 2 and the light shielding portion 5. As a result, ozone is generated. Ozone is applied to the main surface of the substrate W2 through the light shielding portion 5. In the example of FIG. 6, the flow of the ozone is schematically represented by arrows near the molecular formula of the ozone. Ozone acts on the main surface of the substrate W2, thereby being able to oxidize, decompose, and remove organic substances existing on the main surface of the substrate W2.

On the other hand, since the ultraviolet rays are blocked by the light shielding portion 5, the ultraviolet rays irradiated onto the substrate W2 can be reduced or avoided. This can reduce damage to the substrate W2 by the ultraviolet rays described below. For example, a low-dielectric film may be formed on the main surface of the substrate W2. This low dielectric film is also called a Low-k film. As the material of the low-dielectric film, an organic compound containing SiO ₂ can be used. Si-C bonding exists in this organic compound. The bonding energy of this Si-C bond is, for example, 293 kJ / mol in 0K. On the other hand, the energy of ultraviolet light having a wavelength of 172 nm is 694 kJ / min, and can be higher than the bonding energy of Si-C. Therefore, the main surface of the substrate W2 can be irradiated with ultraviolet rays to cut the Si-C bond. This can increase the k value (dielectric constant) of the low-dielectric film. That is, the substrate W2 is damaged by ultraviolet rays (for example, the Si-C bond is cut). When the value of k is increased, a wiring delay occurs in the manufactured semiconductor device and a response speed is reduced. On the other hand, in the example of FIG. 6, since the light shielding portion 5 blocks ultraviolet rays, it is possible to suppress the damage to the substrate W2.

Referring to FIG. 5 again, in step S4, the control unit 7 determines whether or not the processing should be ended. For example, the control unit 7 may determine that the processing should be terminated when the elapsed time from step S3 exceeds a predetermined time. When it is determined that the processing should not be ended, the control unit 7 executes step S4 again. When it is determined that the process should be ended, the control unit 7 stops the ultraviolet irradiator 2 in step S5. Next, in step S6, the control unit 7 closes the on-off valve 427 and opens the on-off valve 426. As a result, a gas (here, nitrogen) stored in the gas storage portion 424 is supplied to the processing chamber 12. Thereby, the ozone system is appropriately exhausted.

As described above, according to this operation, a single ultraviolet irradiator 2 can be used for processing in the processing chambers 11 and 12.

<Irradiation toward the back of the substrate>

In a case where a low-dielectric film is formed on one main surface (hereinafter also referred to as a surface) of the substrate W1 and a low-dielectric film is not formed on the other main surface (hereinafter also referred to as a back surface), the substrate is held The unit 31 may hold the substrate W1 with the rear surface of the substrate W1 facing the ultraviolet irradiator 2. In other words, the control unit 7 may control the indexing robot 121 or the transfer robot 123 to transfer the substrate W1 to the substrate holding unit 31 such that the back surface of the substrate W1 faces the ultraviolet irradiator 2. In the example of FIG. 2, the substrate holding portion 31 is positioned vertically above the ultraviolet irradiator 2. Therefore, the index robot 121 or the transfer robot 123 only needs to transport the substrate W1 with its surface facing vertically upward, and arrange the substrate W1 on the substrate holding portion 31 in this posture.

Thereby, compared with the case where the surface of the substrate W1 on which the low-dielectric film is formed faces the ultraviolet irradiator 2, damage to the low-dielectric film by ultraviolet rays can be reduced. This is because ultraviolet rays are not directly irradiated to the low-dielectric film.

<Back and forth movement through the traffic section>

In the case where the substrate processing apparatus 10 is disposed in the passage portion 122, the substrate will be irrespective of the return path from the container holding portion 110 to the substrate processing portion 130 and the return path from the substrate processing portion 130 to the container holding portion 110. Via the substrate processing apparatus 10. Therefore, the substrate processing system 100 may, for example, pass a substrate through one of the processing chambers 11 and 12 in the return path, and pass the substrate through the other of the processing chambers 11 and 12 in the return path. In other words, for example, the index robot 121 may transfer the substrate from the container holding section 110 to one of the substrate holding sections 31 and 32 and the substrate from the other of the substrate holding sections 31 and 32 to the container holding section 110. The transfer robot 123 may also transfer substrates from the one to the substrate processing unit 130 and transfer substrates from the substrate processing unit 130 to the other. Thereby, the processes of both the processing chambers 11 and 12 can be performed during the round-trip transportation in the substrate processing system 100.

As a specific example, the control unit 7 may control each configuration of the substrate processing system 100 so as to perform the operations described below. The processing chamber 11 is used in the outbound path, for example. Specifically, the index robot 121 takes out a substrate from the container holding section 110 and places the substrate on the substrate holding section 31 of the processing chamber 11. As described above, the substrate is subjected to a static elimination process in the processing chamber 11. The removed substrate is transferred to the substrate processing unit 130 by the transfer robot 123. The substrate processing unit 130 performs processing using a processing liquid on the main surface of the substrate. Since the charge of the substrate has been removed, arcing caused by the processing liquid is less likely to occur in the substrate processing unit 130, and this processing can be performed appropriately.

Depending on the type of processing liquid, organic matter may remain on the main surface of the substrate. Therefore, the processing chamber 12 is used in the return path. Specifically, the transfer robot 123 takes out the processed substrate from the substrate processing unit 130 and places the substrate on the substrate holding unit 32 of the processing chamber 12. As described above, the substrate is subjected to an organic matter removal process in the processing chamber 12. Thereby, organic substances on the substrate are removed. The indexing robot 121 takes out a substrate from the processing chamber 12 and transfers the substrate to the container holding section 110.

This makes it possible to perform appropriate processing before and after the processing by the substrate processing unit 130 in the passage unit 122.

<Supply oxygen to the processing chamber 11>

In the above example, nitrogen is supplied to the processing chamber 11 in step S2. However, it is not limited to this. For example, when mainly focusing on the removal of organic matter, oxygen may be supplied to the processing chamber 11. Specifically, the control unit 7 closes the on-off valve 416 and opens the on-off valve 417. As a result, a gas (here, oxygen) stored in the gas storage portion 415 is supplied to the processing chamber 11.

FIG. 7 schematically shows an example of the state of the substrate processing apparatus 10 when oxygen is supplied to the processing chambers 11 and 12. In this case, a large amount of ozone is generated even in the processing chamber 11, and this ozone acts on the main surface of the substrate W1. Since ozone acts on the main surface of the substrate W1, organic substances existing on the main surface of the substrate W1 can be effectively removed.

In the above operation, since ozone is generated in the processing chamber 11, it is also possible to stop supplying oxygen to the processing chamber 11 and supply nitrogen in step S6. Thereby, the ozone in the processing chamber 11 can be appropriately exhausted.

<Modifications>

Although the light-shielding portion 5 is disposed in the above example, the light-shielding portion 5 is not necessarily required when the main surface of the substrate W2 can be irradiated with ultraviolet rays. In addition, although the gas supply sections 41 and 42 are capable of selectively supplying different kinds of gases in the above example, this is not a necessary condition. In short, it is only necessary to share the ultraviolet irradiator 2 in the processing chambers 11 and 12. This is because the effect of reducing the size of the substrate processing apparatus 10 can be achieved.

[Second Embodiment]

8 and 9 are diagrams schematically showing an example of the configuration of the substrate processing apparatus 10A. The difference from the substrate processing apparatus 10 is that the substrate processing apparatus 10A includes a moving mechanism 8. Note that the illustration of the gas supply sections 41 and 42 and the exhaust sections 61 and 62 is omitted in FIGS. 8 and 9. In other drawings referred to later, these components may be omitted.

The moving mechanism 8 is disposed in the processing chamber 12. The moving mechanism 8 is capable of relatively moving the plate portions 51 and 52. More specifically, the moving mechanism 8 is a second position where the plate portions 51 and 52 can be staggered from each other in the through holes 511 and 521 (see FIG. 8) and the second position in which the through holes 511 and 521 face each other in the Z direction. (Refer to FIG. 9) Relatively move. The operation of the moving mechanism 8 is controlled by, for example, the control unit 7. As the moving mechanism 8, for example, a known single-axis table (also referred to as an X-axis table) can be used. The moving mechanism 8 moves, for example, the plate portion 51.

In addition, the distribution of the through-holes 511 in the plate portion 51 and the distribution of the through-holes 521 in the plate portion 52 are different only in formation positions, and the distribution forms correspond to each other. That is, the sizes of the respective through holes 511 and 521 are the same, and the formation interval and the arrangement direction are also the same. Therefore, as long as one of the plate portions 51 and 52 is shifted in the horizontal direction (Y direction) with respect to the other, the formation positions of the respective through holes 511 and 521 are integrated with each other.

When the moving mechanism 8 stops the plate portion 52 with respect to the plate portion 51 at the first position (FIG. 8), the ultraviolet rays from the ultraviolet irradiator 2 are blocked by the light shielding portion 5 in the same manner as in the first embodiment. On the other hand, when the moving mechanism 8 stops the plate portion 52 at the second position (FIG. 9) relative to the plate portion 51, the ultraviolet rays from the ultraviolet irradiator 2 are radiated to the main body of the substrate W2 through the through holes 511 and 521. surface. Therefore, ultraviolet rays can be applied to the main surface of the substrate W2.

As described above, according to the substrate processing apparatus 10A, whether or not ultraviolet rays are irradiated to the main surface of the substrate W2 can be controlled by the positional relationship between the plate portions 51 and 52. For example, the control unit 7 receives information on whether a low-dielectric film is formed on the main surface of the substrate W2 from the outside. This information may also be included in a so-called recipe (job instruction), which specifies the processing content of the substrate. When the low-dielectric film is formed on the main surface of the substrate W2, the control unit 7 may control the moving mechanism 8 so that the plate portion 52 stops at the first position (FIG. 8) relative to the plate portion 51. On the other hand, when the low-dielectric film is not formed on the main surface of the substrate W2, the control unit 7 may control the moving mechanism 8 so that the plate portion 52 stops at the second position (FIG. 9) relative to the plate portion 51. . Thereby, since the main surface of the substrate W2 is irradiated with ultraviolet rays, the charge can be removed by, for example, a photoelectric effect.

As described above, the form of the through-hole distribution is common to the two plate portions 51 and 52, and the plurality of through-holes 511 are opposed to the plurality of through-holes 521 in the Z direction in the second position, respectively. That is, the plurality of through holes 511, 521 face each other one-on-one. In the example shown in FIG. 4, the relative positional relationship of the plurality of through holes 521 viewed from the Z direction is the same as the relative positional relationship of the plurality of through holes 511. Thereby, the plate portions 51 and 52 are relatively moved in the horizontal direction, so that the plurality of through holes 511 can be opposed to the plurality of through holes 521 one by one. Thereby, the light-shielding part 5 can pass ultraviolet rays through a wider area. Therefore, the main surface of the substrate W2 can be irradiated with ultraviolet rays in a wider range.

Of course, the shapes, sizes, and positional relationships of the plurality of through holes 511 and 521 may be set as appropriate, and are not limited to the form shown in FIG. 4. For example, instead of the circular through-holes 511, a plurality of slit-like through-holes that are longer in the X direction may be arranged in the Y direction. The same applies to the through hole 521. At this time, the pitch of the slit-shaped through holes in the plate portion 51 and the pitch of the slit-shaped through holes in the plate portion 52 are set to be slightly the same. Thereby, the plate portion 52 is moved relative to the plate portion 51 in the Y direction, whereby the through-holes in the plate portion 51 and the through-holes in the plate portion 52 face each other one-to-one in the Z direction.

The positional integration of the two sets of through holes in the second position need not be completely consistent. That is, even in the case where there is a part of non-uniformity, as long as the positions of most of the through holes coincide with each other and sufficient ultraviolet rays can pass through during processing, it is not a problem. In addition, in the case where each of the plate portions 51 and 52 has a small size of each through hole and the interval between the through holes adjacent to each other in the horizontal direction is narrowed and each of the plate portions 51 and 52 is close to a "mesh shape", The concept of "a plate-like member with through holes". Even in a case where the number of through-holes in each of the plate portions 51 and 52 is one, it is not a problem as long as the through-holes realize a spatial and selective light transmission distribution in a slit-like manner that bends back and forth. These conditions regarding the shape and distribution of the through holes are not limited to this embodiment, and can be applied to other embodiments in common.

The substrate holding unit 32 may rotate the substrate W2 with the Z direction as a rotation axis. Specifically, the substrate holding unit 32 only needs to include a table (not shown) for holding the substrate W2 and a rotation mechanism (not shown) for rotating the table. The rotation shaft system passes through the center of the substrate W2, for example. As such a substrate holding portion 32, a so-called spin chuck can be used. Thereby, the ultraviolet rays passing through the light shielding portion 5 can be applied to the main surface of the substrate W2 in a wider range and more uniformly.

<An example of a substrate processing operation>

FIG. 10 is a flowchart showing an example of the operation of the substrate processing apparatus 10A. FIG. 10 illustrates an operation when the processing chambers 11 and 12 are subjected to a static elimination process in which ultraviolet rays are irradiated to the main surface of the substrate and electric charges are removed in parallel. First, as in step S1, in step S11, the substrates W1 and W2 are arranged on the substrate holding portions 31 and 32, respectively.

Next, in step S12, the control unit 7 opens the on-off valves 416 and 426 and closes the on-off valves 417 and 427. Thereby, a gas (here, nitrogen) stored in the gas storage section 414 is supplied to the processing chamber 11, and a gas (here, nitrogen) stored in the gas storage section 424 is supplied to the processing chamber 12.

Next, in step S13, the control unit 7 controls the moving mechanism 8 to relatively move the plate portions 51 and 52 so that the through holes 511 and 521 face each other in the Z direction. In addition, the execution order of steps S11 to S13 is not limited to this, and may be appropriately changed.

Next, in step S14, the control unit 7 causes the ultraviolet irradiator 2 to irradiate ultraviolet rays. In addition, similar to step S3, step S14 may be performed only when the atmosphere in the processing chambers 11 and 12 becomes a desired atmosphere.

FIG. 11 is a diagram showing an example of a configuration of a substrate processing apparatus 10A. FIG. 11 schematically shows a state of the substrate processing apparatus 10A in step S14. Nitrogen is supplied to the processing chambers 11 and 12. In addition, in FIG. 11, an arrow indicating that the ultraviolet irradiator 2 has a starting point shows how the ultraviolet irradiator 2 irradiates ultraviolet rays to the processing chambers 11 and 12. The ultraviolet irradiator 2 irradiates ultraviolet rays to the main surface of the substrate W1 in the processing chamber 11, and irradiates ultraviolet rays to the main surface of the substrate W2 through the through holes 511 and 521 in the processing chamber 12.

Accordingly, since the main surfaces of the substrates W1 and W2 can be irradiated with ultraviolet rays, the electric charges accumulated in the substrates W1 and W2 can be removed by, for example, a photoelectric effect. In addition, the control unit 7 may rotate the substrate W2 by the substrate holding unit 32 during the irradiation of ultraviolet rays.

[Third embodiment]

Fig. 12 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10B. The difference from the substrate processing apparatus 10 is that the substrate processing apparatus 10B includes a substrate holding portion 33. The substrate holding portion 33 is, for example, disposed in the processing chamber 12 and can hold the substrate W2 so that the main surface of the substrate W2 faces the ultraviolet irradiator 2. The substrate holding portion 33 holds the substrate W2 at a position different from the substrate held by the substrate holding portion 32. For example, the substrate holding portion 33 holds the substrate W2 at a position closer to the ultraviolet irradiator 2 than the substrate holding portion 32. As a more specific example, the substrate holding portion 33 holds the substrate W2 between the ultraviolet irradiator 2 and the light shielding portion 5. The specific structure of the substrate holding portion 33 is not particularly limited, and may have, for example, the same structure as the substrate holding portion 32 (for example, a concave portion formed on the inner side surface of the chamber 1).

When the substrate W2 is placed on the substrate holding portion 33, ultraviolet rays can be irradiated to the main surface of the substrate W2 without passing through the light shielding portion 5. This makes it possible to irradiate ultraviolet rays to a wider range than the substrate W2. Therefore, the charge of the substrate W2 can be removed more effectively. In addition, since the substrate W2 can be placed in the vicinity of the ultraviolet irradiator 2, the intensity of ultraviolet rays on the main surface of the substrate W2 can be increased. Thereby, the electric charge of the substrate W2 can be removed more quickly.

[Fourth embodiment]

FIG. 13 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10C. The substrate processing apparatus 10C has a configuration in which the light shielding section 5 of the substrate processing apparatus 10B has been omitted. Since the substrate processing apparatus 10C includes the substrate holding portions 32 and 33, the substrate W2 can be selectively placed on one of the substrate holding portions 32 and 33.

However, when ultraviolet rays are irradiated to the main surface of the substrate W2 on which the low-dielectric film is formed, the low-dielectric film is damaged as described above. This amount of damage (for example, an increase in the value of k) means that the higher the intensity of ultraviolet rays, the greater the intensity.

The intensity of the ultraviolet rays is lower as the distance from the ultraviolet irradiator 2 is longer. The substrate holding portion 32 is located away from the ultraviolet irradiator 2, and the substrate holding portion 33 is located near the ultraviolet irradiator 2. Therefore, the intensity of ultraviolet rays in the substrate W2 held by the substrate holding portion 32 is lower than the intensity of ultraviolet rays in the substrate W2 held by the substrate holding portion 33. Therefore, when the substrate W2 is held by the substrate holding portion 32, damage to the low-dielectric film can be reduced.

On the other hand, the higher the intensity of the ultraviolet rays in the substrate W2, the more the electric charges can be removed in a short time. Therefore, the removal speed of the electric charges is faster in the case where the substrate W2 is held by the substrate holding portion 33 than in the case where the substrate W2 is held by the substrate holding portion 32.

Hereinafter, the relationship between the amount of damage to the low-dielectric film and the irradiation time, and the relationship between the charge removal and the irradiation time will be examined. Here, the amount of damage to the low-dielectric film was evaluated based on the change in the light absorption rate of the low-dielectric film. 14 and 15 are diagrams schematically showing an example of the relationship between the absorptance of the low-dielectric film and the wave number of light. As the low dielectric film, a porous organic silicate (OSG2.4) was used. The wave number of the Si-CH ₃ bond in the low dielectric film is 1274 cm ^-1 .

FIG. 14 shows the relationship when the intensity of ultraviolet rays on the main surface of the substrate is high, and FIG. 15 shows the relationship when the intensity of ultraviolet rays on the main surface of the substrate is low. For example, the main surface of the substrate of FIG. 14 in the UV intensity as 19mm / cm ^2, in FIG. 15 is a 2mm / cm ^2. Here, the intensity of ultraviolet rays is adjusted by adjusting the distance between the substrate and the ultraviolet irradiator. For example, the distance is 3 mm in FIG. 14 and 17.6 mm in FIG. 15.

In FIG. 14, the absorption rate before ultraviolet irradiation is represented by a curve R0, and the absorption rates after 10 seconds, 20 seconds, and 30 seconds after ultraviolet irradiation are shown by curves R11 to R13, respectively. In FIG. 15, the absorption rates after 5 minutes, 7 minutes, and 10 minutes from the ultraviolet irradiation are shown by curves R21 to R23, respectively.

16 and 17 are diagrams schematically showing an example of the relationship between the potential (also referred to as surface charge) on the main surface of the substrate and the irradiation time. The unit of time shown on the horizontal axis in FIG. 16 is seconds, and the unit of time shown on the horizontal axis in FIG. 17 is minutes. FIG. 16 shows the above relationship when the intensity of ultraviolet rays on the main surface of the substrate is high, and FIG. 17 shows the above relationship when the intensity of ultraviolet rays on the main surface of the substrate is low. The value of the intensity of ultraviolet rays in FIG. 16 is the same as the intensity of ultraviolet rays in FIG. 14, and the value of the intensity of ultraviolet rays in FIG. 17 is the same as the intensity of ultraviolet rays in FIG. 15.

However, since the low-dielectric film is not prone to produce photoelectric effect, there are cases where the charge is removed using ions. For example, oxygen ions can be used. The oxygen ion system can be generated by absorbing ultraviolet rays with oxygen. Since the substrate uses the oxygen ion, the charge on the substrate can be removed. Here, the oxygen concentration in the space between the substrate and the ultraviolet irradiator was set to 20.9%.

As shown in FIGS. 16 and 17, when the intensity of the ultraviolet rays is high, the electric charges are rapidly removed by irradiation of the ultraviolet rays. Therefore, from the viewpoint of removal of electric charges, it is desirable that the intensity of ultraviolet rays be high. However, as shown in FIG. 14, in a case where the intensity of ultraviolet rays is high, a change in the absorptivity at a wavenumber of 1274 cm ⁻¹ is exhibited after 10 seconds have passed from the irradiation of the ultraviolet rays (curve R11). In other words, damage occurred in the low-dielectric film after 10 seconds from the irradiation of ultraviolet rays. In the example of FIG. 16, the surface charge at this time is smaller than −50V.

On the other hand, as shown in FIG. 15, in a case where the intensity of ultraviolet rays is low, the absorption rate at a wave number of 1274 cm ^-1 hardly changes even after 5 minutes have passed from the irradiation of ultraviolet rays (curve R21), but A change appeared after 7 minutes (curve R22). That is, the substrate is hardly damaged within 5 minutes after the irradiation of ultraviolet rays. Further, as shown in FIG. 17, the surface charge after 5 minutes from the start of ultraviolet irradiation is larger than -30V and smaller than -20V. That is, the charge can be removed compared to the surface charge after 10 seconds shown in FIG. 16.

As described above, it is found that by reducing the intensity of ultraviolet rays in the main surface of the substrate, it is possible to suppress damage to the low-dielectric film and remove electric charges.

Therefore, when the low dielectric film is formed on the main surface of the substrate W2, the control unit 7 controls the index robot 121 or the transfer robot 123 so that the substrate W2 is transferred to the substrate holding unit 32. Thereby, it is possible to suppress damage to the low-dielectric film and effectively remove electric charges.

On the other hand, when the low-dielectric film is not formed on the main surface of the substrate W2, the control unit 7 controls the index robot 121 or the transfer robot 123 so that the substrate W2 is transferred to the substrate holding unit 33. Thereby, the electric charge of the substrate W2 can be removed more quickly.

As described above, when the low-dielectric film is formed on the substrate W2, the substrate W2 is held by the substrate holding portion 32; when the low-dielectric film is not formed on the substrate W2, the substrate W2 is held by the substrate holding portion 33. Information on whether or not a low-dielectric film is formed on the substrate W2 may also be received from an external device, for example.

[Fifth embodiment]

FIG. 18 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10D. The difference from the substrate processing apparatus 10 is that the substrate processing apparatus 10D is provided with reflecting portions 91 and 92 and moving mechanisms 93 and 94.

The reflecting section 91 and the moving mechanism 93 are arranged in the processing chamber 11. The reflecting portion 91 has a reflecting surface, and reflects ultraviolet rays on the reflecting surface. The reflecting surface of the reflecting portion 91 may be formed of a member having a high reflectance to ultraviolet rays, and may be, for example, aluminum having a low surface roughness. For example, the reflection portion 91 is formed in a plate shape, for example, and one principal surface of the reflection portion 91 functions as a reflection surface.

The moving mechanism 93 moves the reflecting portion 91 between two positions described below. The first position is a position where the reflecting portion 91 faces the ultraviolet irradiator 2 (hereinafter referred to as a first reflecting position). In this first reflection position, the reflection surface of the reflection portion 91 faces the ultraviolet irradiator 2. In this state, the ultraviolet rays irradiated from the ultraviolet irradiator 2 are reflected by the reflecting portion 91 toward the ultraviolet irradiator 2. In other words, the first reflection position may be a position where the reflection portion 91 can reflect ultraviolet rays toward the ultraviolet irradiator 2. The second position is a position where the reflecting portion 91 does not face the ultraviolet irradiator 2.

The reflecting section 92 and the moving mechanism 94 are arranged in the processing chamber 12. The reflecting section 92 has a reflecting surface and reflects ultraviolet rays on the reflecting surface. The reflecting surface of the reflecting portion 92 may be formed of a member having a high reflectance to ultraviolet rays, and may be, for example, aluminum having a low surface roughness. For example, the reflection portion 92 is formed in a plate shape, for example, and one principal surface of the reflection portion 92 functions as a reflection surface.

The moving mechanism 94 moves the reflecting portion 92 between two positions described below. The first position is a position where the reflecting portion 92 faces the ultraviolet irradiator 2 (hereinafter referred to as a second reflecting position). In this second reflection position, the reflection surface of the reflection portion 92 faces the ultraviolet irradiator 2. In this state, the ultraviolet rays irradiated from the ultraviolet irradiator 2 are reflected by the reflecting portion 92 toward the ultraviolet irradiator 2. In other words, the second reflection position may be a position where the reflection portion 92 can reflect ultraviolet rays toward the ultraviolet irradiator 2. The second position is a position where the reflecting portion 92 does not face the ultraviolet irradiator 2.

The reflecting surfaces of the reflecting portions 91 and 92 may have a width that is approximately opposite to the entire surface of the ultraviolet irradiator 2. Thereby, ultraviolet rays can be reflected to the ultraviolet irradiator 2 in a wider range.

The ultraviolet irradiator 2 is capable of passing ultraviolet rays incident from the outside. For example, in a case made of quartz glass, a pair of electrodes face each other in a horizontal direction (for example, X direction or Y direction), and a discharge gas is filled between the pair of electrodes. Thereby, ultraviolet rays pass through quartz glass in the Z direction. That is, the ultraviolet rays from the outside pass through the ultraviolet irradiator 2 in the Z direction.

The moving mechanism 93 may be, for example, a uniaxial table, and for example, the reflecting section 91 may be linearly moved. Alternatively, the moving mechanism 93 may move the reflecting portion 91 on an arc in a horizontal plane. In this case, the moving mechanism 93 may include, for example, a rotating body that rotates in the Z direction as a rotation axis; one end connected to the rotating body; and the other end connected to the reflecting portion 91. The connecting portion extends in the radial direction of the rotating body. Thereby, the reflection part 91 moves on a circular arc with rotation of a rotating body. The same applies to the moving mechanism 94. The operation of the moving mechanisms 93 and 94 is controlled by the control unit 7.

When both of the reflecting portions 91 and 92 are not opposed to the ultraviolet irradiator 2, the ultraviolet irradiator 2 can irradiate ultraviolet rays to the substrate W1 and the substrate W2 (or the light shielding portion 5).

When the reflecting section 91 is opposed to the ultraviolet irradiator 2 and the reflecting section 92 is not opposed to the ultraviolet irradiator 2, the ultraviolet rays emitted from the ultraviolet irradiator 2 toward the processing chamber 11 are reflected by the reflecting section 91. The reflected ultraviolet light is irradiated to the processing chamber 12 through the ultraviolet irradiator 2. Thereby, the amount of ultraviolet rays radiated to the processing chamber 12 can be increased. In this case, the substrate is not processed in the processing chamber 11.

Similarly, when the reflecting portion 91 is not opposed to the ultraviolet irradiator 2 and the reflecting portion 92 is opposed to the ultraviolet irradiator 2, the ultraviolet rays emitted from the ultraviolet irradiator 2 toward the processing chamber 12 are reflected by the reflecting portion 92 and pass through the ultraviolet rays. The irradiator 2 irradiates the processing chamber 11. Thereby, the amount of ultraviolet rays irradiated toward the processing chamber 11 can be increased. In this case, the substrate is not processed in the processing chamber 12.

As described above, in a case where the substrate is processed in one of the processing chambers 11 and 12 and the substrate is not processed in the other of the processing chambers 11 and 12, it is possible to irradiate the other which does not require ultraviolet rays. The ultraviolet rays of the processing chamber of the individual are supplied to the processing chamber of the one requiring ultraviolet rays. This makes it possible to effectively use ultraviolet rays.

In addition, as described in the fourth embodiment, it is desirable to reduce the intensity of ultraviolet rays in the substrate for the substrate on which the low-dielectric film is formed. Therefore, the control unit 7 may control the moving mechanisms 93 and 94 depending on the presence or absence of the low-dielectric film.

For example, in the case where the substrate W1 on which the low-dielectric film is not formed is processed in the processing chamber 11, the control section 7 controls the moving mechanism 93 so that the reflection section 91 is not opposed to the ultraviolet irradiator 2, and The reflecting section 92 controls the moving mechanism 93 so as to face the ultraviolet irradiator 2. Thereby, since the intensity of the ultraviolet rays in the main surface of the substrate W1 can be increased, the charges accumulated in the substrate W1 can be quickly removed.

On the other hand, in the case where the substrate W1 on which the low-dielectric film is formed is processed in the processing chamber 11, the control unit 7 controls the moving mechanism so that the reflecting portions 91 and 92 do not face the ultraviolet irradiator 2. 93, 94. Thereby, since the intensity of ultraviolet rays in the main surface of the substrate W1 can be reduced, damage to the low-dielectric film can be reduced, and the electric charges accumulated in the substrate W1 can be effectively removed. The same operation can be applied to the case where processing is performed in the processing chamber 12.

In addition, in the first embodiment to the fifth embodiment, examples of the treatment using ultraviolet rays in the processing chambers 11 and 12 include a charge removal process (a static elimination process) and an organic substance removal process. However, the treatment using ultraviolet rays is not limited to this. For example, the water-repellent agent remaining on the substrate may be removed. For example, in order to remove the chemical solution of the substrate, the surface of the substrate may be washed with pure water. When this pure water is dried, there is a possibility that the pattern formed on the substrate is broken due to surface tension. To prevent this problem, a water-repellent agent may be supplied to the surface of the substrate. The water-repellent agent remaining after drying of pure water is removed by irradiating ultraviolet rays. It can also be removed by the action of ozone.

Claims (20)

    A substrate processing apparatus is provided with: an ultraviolet irradiation means, which is located at the boundary between a first processing chamber and a second processing chamber, and can irradiate ultraviolet rays to the first processing chamber and the second processing chamber; The second substrate holding means is disposed in the first processing chamber and holds the substrate so as to oppose the ultraviolet irradiation means; and the second substrate holding means is disposed in the second processing chamber and is held so as to oppose the ultraviolet irradiation means. Substrate.         The substrate processing apparatus according to claim 1, further comprising: a light shielding means for separating a space between the ultraviolet irradiation means and the second substrate holding means into a first space on the ultraviolet irradiation means side and The second space on the side of the second substrate holding means is configured to block ultraviolet rays from the ultraviolet irradiation means and communicate the atmosphere in the first space with the atmosphere in the second space; and a gas supply means, A gas is supplied to the first space.         The substrate processing apparatus according to claim 2, wherein the light-shielding means includes: a first plate portion and a second plate portion having a light-shielding property against ultraviolet rays; and at least one first through hole is formed in the first plate portion; At least one second through-hole is formed in the second plate portion; the first plate portion and the second plate portion are respectively located at the position of the at least one first through-hole and the position of the at least one second through-hole. The arrangement relationships in which the directions of the plate surfaces parallel to each other are staggered are arranged to face each other at intervals.         The substrate processing apparatus according to claim 3, further comprising: a first moving means for relatively moving the first plate portion and the second plate portion between the first position and the second position; The first position is a position where the at least one first through hole and the at least one second through hole are staggered from each other, and the second position is a positional integration of the at least one first through hole and the at least one second through hole position.         The substrate processing apparatus according to claim 4, wherein the at least one first through-hole system includes a plurality of first through-holes; the at least one second through-hole system includes a plurality of second through-holes; In the position, the plurality of first through-holes and the plurality of second through-holes face each other one-to-one.         The substrate processing apparatus according to claim 3, further comprising: a third substrate holding means configured to hold the substrate between the light shielding means and the ultraviolet irradiation means so as to face the ultraviolet irradiation means.         The substrate processing apparatus according to claim 1, further comprising: a first gas supply means for supplying gas to the first processing chamber; and a second gas supply means for supplying gas to the second processing chamber.         The substrate processing apparatus according to claim 7, wherein at least one of the first gas supply means and the second gas supply means selectively supplies a plurality of types of gases.         The substrate processing apparatus according to any one of claims 1 to 8, further comprising: at least one reflection means, which is arranged in at least any one of the first processing chamber and the second processing chamber. The ultraviolet rays of the ultraviolet irradiation means are reflected toward the other; and the second moving means is at a position where the at least one reflection means faces the ultraviolet irradiation means and a position where the at least one reflection means does not face the ultraviolet irradiation means The aforementioned at least one reflection means is moved in between.         The substrate processing apparatus according to any one of claims 1 to 8, further comprising: a fourth substrate holding means for interposing between the second substrate holding means and the ultraviolet irradiation means so as to be opposed to the ultraviolet irradiation means. In this way, the substrate on which the low-dielectric film is formed is held.         The substrate processing apparatus according to any one of claims 1 to 8, wherein the first substrate holding means includes a first main surface on which a low-dielectric film is formed and a first substrate on which a low-dielectric film is not formed. The two main surfaces of the substrate are held in a posture in which the second main surface faces the ultraviolet irradiation means.         A substrate processing system is provided with: a container holding section for containing a container for accommodating a substrate; a substrate processing section for applying a treatment using a processing liquid to a substrate; and a substrate passing section for The substrate passing back and forth between the container holding section and the substrate processing section passes through; the substrate passing section is provided with the substrate processing device according to any one of claims 1 to 8.         The substrate processing system according to claim 12, further comprising: a first conveyance means for receiving and receiving a substrate between each of the first substrate holding means and the second substrate holding means and the container holding section; and The two conveying means are configured to transfer and receive a substrate between each of the first substrate holding means and the second substrate holding means and the substrate processing unit.         The substrate processing system according to claim 13, wherein the first transfer means transfers the substrate from the container holding section to one of the first substrate holding means and the second substrate holding means, and transfers the substrate Transfer from the other of the first substrate holding means and the second substrate holding means to the container holding section; the second conveying means is to transfer the substrate from the first substrate holding means and the second substrate holding means One is transferred to the substrate processing section, and the substrate is transferred from the substrate processing section to the other of the first substrate holding means and the second substrate holding means.         A substrate processing method includes the method of facing the first processing chamber and the second processing chamber with an ultraviolet irradiation means that can irradiate ultraviolet rays to the first processing chamber and the second processing chamber. A step of holding a substrate by a first substrate holding means in a processing chamber; a step of holding a substrate by a second substrate holding means in a manner opposite to the ultraviolet irradiation means in the second processing chamber; A step of supplying a gas in a first space between the irradiation means, and the light shielding means separates a space between the ultraviolet irradiation means and the second substrate holding means into a first space on the ultraviolet irradiation means side and the second The second space on the substrate holding means side is arranged so as to communicate the atmosphere in the first space with the atmosphere in the second space while blocking ultraviolet rays from the ultraviolet irradiation means.         The substrate processing method according to claim 15, wherein the light-shielding means includes a first plate portion and a second plate portion having a light-shielding property against ultraviolet rays; at least one first through hole is formed in the first plate portion; The second plate portion is formed with at least one second through hole; the first plate portion and the second plate portion are located at a position corresponding to each of the at least one first through hole and the position of the at least one second through hole. The arrangement relationship in which the directions in which the planes of the plates are parallel to each other is staggered is arranged to face each other at intervals.         The substrate processing method according to claim 16, further comprising a step of relatively moving the first plate portion and the second plate portion between a first position and a second position, wherein the first position is the foregoing At least one first through hole and the at least one second through hole are staggered from each other. The second position is a position where the at least one first through hole and the at least one second through hole are positionally integrated with each other.         The substrate processing method according to claim 17, wherein the at least one first through-hole system includes a plurality of first through-holes; the at least one second through-hole system includes a plurality of second through-holes; In the position, the plurality of first through-holes and the plurality of second through-holes face each other one-to-one.         The substrate processing method according to claim 16, further comprising a step of holding a substrate between the light shielding means and the ultraviolet irradiation means so as to oppose the ultraviolet irradiation means.         The substrate processing method according to claim 15, further comprising a step of supplying a gas to the first processing chamber and a step of supplying a gas to the second processing chamber.