JP6374735B2 - Vacuum processing apparatus and dry cleaning method - Google Patents

Description

  The present invention relates to a vacuum processing apparatus and a dry cleaning method.

  As background art of this technical field, JP-A-2002-217156 (Patent Document 1), US Patent Application Publication No. 2004/0185670 (Patent Document 2) and US Patent Application Publication No. 2008/0268645 ( There exists patent document 3).

  Japanese Patent Application Laid-Open No. 2002-217156 (Patent Document 1) discloses an electrical action and a chemical action of plasma generated by plasma generating means, and a high-speed gas flow formed by a pad-type structure disposed close to the wafer surface. A dry cleaning apparatus is described in which a foreign substance on the wafer surface is removed in combination with a physical action due to frictional stress.

U.S. Patent Application Publication No. 2004/0185670 (Patent Document 2) describes an oxide processing system in which a first processing chamber and a second processing chamber are combined. In the first processing chamber, the substrate is exposed to a gas atmosphere such as HF / NH ₃ to perform chemical treatment, and in the second processing chamber, the oxide is removed by heat-treating the chemically treated substrate.

US Patent Application Publication No. 2008/0268645 (Patent Document 3) describes a method of removing silicon oxide from the surface of a substrate. A substrate with silicon oxide exposed is placed in the processing chamber, and the substrate is set to a first temperature of 65 ° C. or lower. Then, a mixed gas is introduced into the processing chamber to generate plasma, and (NH ₄ ) ₂ SiF on the substrate surface. ₆ thin film is formed. Thereafter, the substrate is raised to a second temperature of about 100 ° C. or higher, and the (NH ₄ ) ₂ SiF ₆ thin film is removed.

JP 2002-217156 A US Patent Application Publication No. 2004/0185670 US Patent Application Publication No. 2008/0268645

  In recent years, wafer cleaning in a dry environment (hereinafter referred to as dry cleaning) has been required as a wafer cleaning technique that replaces wet cleaning. In the dry cleaning, as in the wet cleaning, the following three steps are performed, that is, a first step of forming a surface layer for peeling on the surface of the object to be processed, and foreign matter or metal contaminants are lifted off together with the surface layer ( It is necessary to consider the second step of lift-off) and the third step of preventing reattachment of the lifted off foreign matter or metal contaminant to the object to be processed.

  Patent Documents 1, 2, and 3 describe a method for removing foreign matters by dry cleaning. However, in any dry cleaning, there is a high possibility that the foreign matter that has risen into the processing chamber will reattach to the object to be processed, and there is a concern that the manufacturing yield of the semiconductor device may be reduced.

  Therefore, the present invention provides a vacuum processing apparatus and dry cleaning suitable for removing foreign matter or metal contaminants from the object to be treated, and further suppressing reattachment of the removed foreign substances or metal contaminants to the object to be treated. Provide a method.

  In order to solve the above problems, a vacuum processing apparatus according to the present invention adsorbs radicals to a processing chamber, a vacuum transfer chamber connected to the processing chamber, for transporting the processing target in a vacuum atmosphere, and the processing target. An adsorption treatment device, a gas supply device connected to a vacuum transfer chamber and supplying a gas to the object to be treated, and an adsorption layer disposed between the adsorption treatment device and the gas supply device and adsorbing radicals from the object to be treated A desorption treatment device for desorption. Furthermore, the vacuum transfer chamber includes a transfer device that transfers the object to be processed that has adsorbed radicals in the direction from the adsorption treatment device to the vacuum transfer chamber.

  In order to solve the above problems, a dry cleaning method according to the present invention includes a step of adsorbing radicals on a target object, supplying a gas to the target object, and transporting the target object adsorbing radicals. And the step of desorbing the adsorption layer from the object to be processed, and the gas is supplied in a direction opposite to the direction in which the object to be processed is conveyed.

  ADVANTAGE OF THE INVENTION According to this invention, the vacuum processing apparatus and dry cleaning which are suitable for removing a foreign material or a metal contaminant from a to-be-processed object, and also suppressing the reattachment of the removed foreign material or a metal contaminant to a to-be-processed object. A method can be provided.

  Problems, configurations, and effects other than those described above will be clarified by the following description of embodiments.

It is a top view which shows the outline of a structure of the vacuum processing treatment by a present Example. It is sectional drawing which shows some vacuum processing apparatuses (a vacuum side conveyance container, a gas supply apparatus, a desorption processing apparatus, and an adsorption processing apparatus) by a present Example. It is a top view which shows a part (vacuum side conveyance container, gas supply apparatus, desorption processing apparatus, and adsorption processing apparatus) of the vacuum processing apparatus by a present Example. It is sectional drawing which shows a part (gas supply apparatus and desorption processing apparatus) of the vacuum processing apparatus by a present Example. It is process drawing which shows an example of the dry cleaning method by a present Example.

  In the following embodiments, when necessary for the sake of convenience, the description will be divided into a plurality of sections or embodiments. However, unless otherwise specified, they are not irrelevant to each other, and one is the other. There are some or all of the modifications, details, supplementary explanations, and the like.

  Further, in the following embodiments, when referring to the number of elements (including the number, numerical value, quantity, range, etc.), especially when clearly indicated and when clearly limited to a specific number in principle, etc. Except, it is not limited to the specific number, and may be more or less than the specific number.

  Further, in the following embodiments, the constituent elements (including element steps) are not necessarily indispensable unless otherwise specified and clearly considered essential in principle. Needless to say.

  In addition, when referring to “consisting of A”, “consisting of A”, “having A”, and “including A”, other elements are excluded unless specifically indicated that only that element is included. It goes without saying that it is not what you do. Similarly, in the following embodiments, when referring to the shapes, positional relationships, etc. of the components, etc., the shapes are substantially the same unless otherwise specified, or otherwise apparent in principle. And the like are included. The same applies to the above numerical values and ranges.

  Further, in the drawings used in the following embodiments, hatching may be added to make the drawings easy to see even if they are plan views. In all the drawings for explaining the following embodiments, components having the same function are denoted by the same reference numerals in principle, and repeated description thereof is omitted. Hereinafter, the present embodiment will be described in detail with reference to the drawings.

  Further, in the following embodiments, when the expression “object to be processed” is used, patterning is performed not only on a simple wafer made of silicon (Si), silicon carbide (SiC), gallium arsenide (GaAs), etc., but also on the main surface thereof. A wafer having a film to be processed, a wafer having a film to be processed with a resist mask formed on the main surface thereof, a wafer having a film to be processed patterned on the main surface, and the like are widely intended. Further, the shape of the wafer is not limited to a circle or a substantially circle, but includes a square, a rectangle, and the like.

(Detailed description of the issue)
First, since it seems that the vacuum processing apparatus and the dry cleaning method according to this embodiment will be clarified, problems of conventional dry cleaning studied by the present inventors will be described.

  In the semiconductor manufacturing process, for example, dry etching using plasma is performed in order to transfer a register pattern formed by a lithography technique to a film to be processed formed on a main surface of a wafer to form a circuit pattern.

  By the way, in forming a circuit pattern by dry etching, it is important to suppress foreign matter. If foreign matter is scattered on the film to be processed, pattern transfer is hindered during dry etching, circuit pattern shape abnormalities such as etching residue occur, and manufacturing yield decreases. In addition to foreign substances, reduction of metal contaminants remaining on the surface of the film to be processed and the film to be processed has become an important issue due to the miniaturization of semiconductor devices accompanying the recent high integration of semiconductor devices. There is a concern that the metal contaminants remaining on the surface of the film to be processed and the film to be processed may directly affect the electrical characteristics of the semiconductor device in a highly integrated semiconductor device.

  Conventionally, wet cleaning has been mainly used to remove these foreign substances or metal contaminants in a semiconductor manufacturing process. In the wet cleaning, for example, a method in which various acid solutions or alkali solutions are diluted with pure water and the wafer is immersed in the solution or sprayed is used. In this wet cleaning, by adjusting the pH of the solution, foreign matters or metal contaminants are lifted off from the surface of the film to be processed or together with a very thin surface layer. The foreign matter or metal contaminant once lifted off has diffused into the solution, thereby realizing a state where the reattachment to the film to be processed is small.

  However, the structure of semiconductor devices is still becoming increasingly complex, and the application of three-dimensional structures, the application of nanowires, and the like are being studied. For this reason, in the conventional wet cleaning, new problems such as a decrease in manufacturing yield due to pattern collapse caused by the surface tension of the solution are expected.

  For this reason, dry cleaning is required as a wafer cleaning technique instead of wet cleaning. A dry cleaning apparatus is described in Patent Document 1, for example, and a surface layer removing method by dry cleaning is described in Patent Documents 2 and 3, for example.

  When removing foreign substances and metal contaminants in dry cleaning, as in wet cleaning, the first step of forming a surface layer for peeling on the surface of the object to be processed, foreign substances or metal contaminants together with the surface layer. It is necessary to consider the above three steps, the second step of lifting off and the third step of preventing the lifted off foreign matter or metal contaminant from reattaching to the object.

  Patent Document 1 describes a dry cleaning apparatus that uses an electrical action, a chemical action, and a physical action in combination. However, there is a possibility that foreign matters or metal contaminants that have risen into the processing chamber may reattach to the object to be processed. Further, since the pad type structure is smaller than the wafer, it is necessary to relatively move the pad type structure and the wafer several times, and there is a possibility that uniform foreign matter removal cannot be achieved within the wafer surface. .

  In Patent Documents 2 and 3, the surface of the material to be processed is processed by the first step of forming a surface layer for peeling on the surface of the object to be processed and the second step of lifting off the surface layer. Dry cleaning is described. However, in the dry cleaning described in Patent Documents 2 and 3, as in Patent Document 1, the formation of the surface layer and the lift-off are performed with the wafer fixed in the processing chamber, so that it rises into the processing chamber. There is a high possibility that foreign matter or metal contaminants will reattach to the object.

  A vacuum processing apparatus according to this embodiment will be described with reference to FIG. FIG. 1 is a top view schematically showing the configuration of the vacuum processing apparatus according to the present embodiment.

  A vacuum processing apparatus 100 shown in FIG. 1 is a plasma processing apparatus, and is roughly divided into a vacuum side block 101 shown on the upper side of the paper and an atmosphere side block 102 shown on the lower side of the paper.

  The atmosphere side block 102 includes a cassette mounting table 108 on which the cassettes 109 a and 109 b are placed, and an atmosphere side transfer container 107. Inside the cassettes 109a and 109b, a plurality of wafers having a film to be processed to be processed in the vacuum processing apparatus 100 formed on the main surface thereof can be stored. Inside the atmosphere-side transfer container 107, a transfer chamber which is a space for transferring wafers stored in the cassettes 109a and 109b is arranged.

  The vacuum-side block 101 includes a vacuum-side transport container 105 disposed in the center, and a plurality of vacuum containers connected to the side walls corresponding to the polygonal sides of the vacuum-side transport container 105. Have. Etching units 103a and 103b are disposed on the two side walls of the vacuum-side transfer container 105, respectively, and a film to be processed formed on the main surface of the wafer is etched inside the etching units 103a and 103b. There is a processing chamber to be processed. In addition, an adsorption processing apparatus 104 is disposed on the other side wall of the vacuum-side transfer container 105, and in the interior thereof, the surface of the film to be processed formed on the main surface of the wafer is peeled off. A surface layer can be formed. In addition, a gas supply device 111 and a desorption processing device 110 are disposed adjacent to each other between the vacuum-side transfer container 105 and the adsorption processing device 104. The adsorption processing device 104, the desorption processing device 110, and the gas The supply device 111 and the vacuum-side transfer container 105 are provided in this order. The wafer is transferred in vacuum between the vacuum side transfer container 105 and the adsorption processing apparatus 104.

  Between the atmosphere-side transfer container 107 and the vacuum-side transfer container 105, a load lock chamber 106a and an unload lock chamber 106b, which are vacuum containers for exchanging wafers between the atmosphere and vacuum, are arranged.

  With the configuration of the vacuum processing apparatus 100, it is possible to provide dry cleaning that can suppress pattern collapse or reattachment of foreign matter or metal contaminants to the film to be processed.

  Next, the dry cleaning method according to this embodiment will be described with reference to FIGS. FIG. 2 is a cross-sectional view showing a part of the vacuum processing apparatus (vacuum side transfer container 105, gas supply apparatus 111, desorption processing apparatus 110, and adsorption processing apparatus 104) according to the present embodiment. FIG. 3 is a top view showing a part of the vacuum processing apparatus (vacuum side transfer container 105, gas supply apparatus 111, desorption processing apparatus 110, and adsorption processing apparatus 104) according to the present embodiment. FIG. 4 is a cross-sectional view showing a part of the vacuum processing apparatus (gas supply apparatus 111 and desorption processing apparatus 110) according to the present embodiment. FIG. 5 is a process diagram showing an example of the dry cleaning method according to the present embodiment.

  As shown in FIG. 2, the dry cleaning according to the present embodiment is performed by the vacuum side transfer container 105, the gas supply device 111, the desorption processing device 110, and the adsorption processing device 104. Further, in the dry cleaning according to the present embodiment, after processing by the adsorption processing apparatus 104, the wafer 209 having a film to be processed formed on the main surface thereof is placed on a transfer apparatus, for example, the transfer wand 212, and the adsorption processing apparatus 104 is used. The wafer 209 is transferred to the desorption processing apparatus 110, the gas supply apparatus 111, and the vacuum side transfer container 105. The transfer wand 212 is not limited as long as the wafer 209 can be placed thereon, but is preferably mechanically or electrically fixed. The speed at which the wafer 209 is transferred is set according to the size of the foreign matter to be removed or the type of metal contaminant.

The adsorption processing apparatus 104 is roughly divided into a processing chamber 206 and a radical supply source 207, and the processing chamber 206 and the radical supply source 207 are separated by a dispersion plate 208. The dispersion plate 208 is provided in order to uniformly supply the activated radicals generated by the radical supply source 207 onto the wafer 209. The material of the dispersion plate 208 is preferably a material that has a low kill rate of radicals generated by the radical supply source 207, for example, quartz (SiO ₂ ) or oxidized aluminum (Al).

The radical supply source 207 is also composed of a container made of quartz (SiO ₂ ) or aluminum (Al) subjected to surface treatment such as oxidation treatment. A predetermined gas is introduced into the container at a predetermined flow rate, and a predetermined power is applied under a predetermined pressure, thereby generating plasma inside the radical supply source 207 and being activated by the gas flow from the plasma. The radical species can be supplied onto the wafer 209.

  As the radical generation source, various plasma sources such as direct current discharge, high frequency discharge (capacitive coupling type or dielectric coupling type), or microwave discharge can be used. An electrodeless discharge type such as discharge or microwave discharge is preferred.

The processing chamber 206 is provided with a wafer mounting electrode 205 capable of adsorbing the wafer 209, and radicals uniformly adhere to the film to be processed formed on the main surface of the wafer 209, and are uniform within the wafer surface. A cooling mechanism with a small in-plane distribution is provided inside the wafer mounting electrode 205 so that a surface layer for proper peeling is formed. The material of the treatment chamber 206 is preferably a material having a low kill rate of radicals generated by the radical supply source 207, like the radical supply source 207 or the dispersion plate 208, for example, quartz (SiO ₂ ) or aluminum that has been subjected to oxidation treatment. (Al) corresponds to this.

  The desorption processing device 110 is disposed next to the adsorption processing device 104. Although not shown, an open / close valve is provided between the desorption processing apparatus 110 and the adsorption processing apparatus 104. The desorption processing apparatus 110 is roughly classified into a space in which the upper heating unit 210 is disposed and a space through which the wafer 209 placed on the lower transfer wand 212 passes. In this embodiment, the case where an infrared lamp is used for the heating unit 210 is illustrated.

  As shown in FIGS. 3 and 4, the infrared lamp 302 for heating the wafer 209 has a cylindrical shape, and is in the direction (y direction) orthogonal to the wafer 209 transport direction (x direction) on the wafer plane. The size of the infrared lamp 302 is larger than the size of the infrared lamp 302 in the transfer direction (x direction) of the wafer 209. In addition, the infrared lamp 302 is disposed above the wafer 209 so that the conveyance direction (x direction) of the wafer 209 and the direction (y direction) orthogonal to the plane of the wafer are the longitudinal direction. The length (L1) in the longitudinal direction (y direction) of the infrared lamp 302 is larger than the diameter (R) of the wafer 209 (L1> R).

  In order to heat the wafer 209, a plurality of infrared lamps 302 may be arranged above the entire surface of the fixed wafer 209. However, in this case, it is difficult to obtain uniform energy under the infrared lamp 302 and between the infrared lamps 302, and it is difficult to heat uniformly. For this reason, in this embodiment, one cylindrical infrared lamp 302 is arranged and irradiated while the wafer 209 is conveyed.

  In the present embodiment, one infrared lamp 302 is illustrated, but a plurality of infrared lamps 302 may be arranged in the transfer direction (x direction) of the wafer 209. However, the length (L1) in the longitudinal direction (y direction) of all the infrared lamps 302 needs to be larger than the diameter (R) of the wafer 209 (L1> R).

  As the infrared lamp 302, for example, a halogen lamp that emits light in the near infrared region having a wavelength of about 1 μm can be used. As shown in FIG. 4, an infrared transmission window 402 is installed under the infrared lamp 302, but the emission wavelength of the halogen lamp is determined in consideration of the transmittance of the infrared transmission window 402 and the absorption characteristics of the wafer 209. Is done. That is, it is only necessary to select a wavelength that has a high transmittance of the window material and can easily absorb the wafer 209. Here, the infrared lamp 302 is illustrated, but it is only necessary to irradiate the wafer 209 with energy capable of peeling the surface layer formed by the adsorption processing apparatus 104. For example, a vacuum ultraviolet ray (VUV: Vacuum) can be used instead of the infrared lamp 302. Ultra-Violet Light) lamps may be used. Alternatively, a method may be employed in which a heater is disposed below the heating unit 210 and the wafer 209 is indirectly heated by radiant heat.

As shown in FIG. 3, the gas supply device 111 is disposed between the desorption processing device 110 and the vacuum-side transfer container 105. Although not shown, the gas supply device 111 includes a mass flow controller for supplying a gas necessary to push the foreign matter or metal contaminants desorbed by the desorption processing device 110 toward the adsorption processing device 104 at a constant flow rate. ing. The gas flow rate is set according to the size of the foreign matter to be removed or the type of metal contaminant. Examples of the supplied gas include nitrogen (N ₂ ) gas, oxygen (O ₂ ) gas, rare gas (helium (He), neon (Ne), and argon (Ar) in order to suppress reaction with the film to be processed. , Krypton (Kr), xenon (Xe) or radon (Rn)) or a mixed gas thereof is desirable.

  As shown in FIG. 3, the gas supply device 111 is provided with an opening 301 for supplying gas, and a direction (y direction) orthogonal to the wafer 209 transfer direction (x direction) and the wafer 209 plane. The dimension of the opening 301 in the direction) is larger than the dimension of the opening 301 in the transfer direction (x direction) of the wafer 209. In addition, the opening 301 is provided such that the conveyance direction (x direction) of the wafer 209 and the direction (y direction) orthogonal to the plane of the wafer 209 are the longitudinal direction. The length (L2) in the longitudinal direction (y direction) of the opening 301 is larger than the diameter (R) of the wafer 209 (L2> R).

  Further, as shown in FIG. 4, the gas supply device 111 is provided with a gas reservoir 403 therein, and the gas supplied via the mass flow controller is made uniform in the gas reservoir 403 to supply the gas. A sheet is discharged from a gas supply unit provided at the lower part of the apparatus 111 and is uniformly supplied onto the wafer 209. A gas guide plate 404 may be provided in the opening 301 for supplying gas. The gas supplied by the gas guide plate 404 is supplied from a direction opposite to the transfer direction (x direction) of the wafer 209, and the desorbed foreign matter or metal contaminant does not reattach to the film to be processed, and the efficiency is improved in the exhaust direction. Are exhausted.

  Next, an example of dry cleaning of an object to be processed according to the present embodiment will be described with reference to FIG.

  (Step S1): The object to be processed is transported to the adsorption processing apparatus by the transport wand provided in the vacuum-side transport container before or after the etching process. After the object to be processed is transferred to the adsorption processing apparatus, the opening / closing valve installed between the adsorption processing apparatus and the desorption processing apparatus is closed.

  (Step S2): The object to be processed is adsorbed to a wafer mounting electrode provided in the adsorption processing apparatus and cooled.

  (Step S3): The radicals generated from the radical supply source are supplied to the object to be processed, and a surface layer suitable for desorption is uniformly formed on the surface of the object to be processed.

  (Step S4): The processing chamber of the adsorption processing apparatus is depressurized by exhaust.

  (Step S5): The opening / closing valve installed between the adsorption processing apparatus and the desorption processing apparatus is opened, and the wafer is again placed on the transfer wand and fixed.

  (Step S6): Gas is uniformly supplied in a sheet form from the gas supply device.

  (Step S7): The infrared lamp is turned on.

  (Step S8): In this state, the wafer is transferred from the adsorption processing apparatus toward the vacuum-side transfer container by the transfer wand. Here, according to the size of the foreign matter to be removed or the type of the metal contaminant, the speed of conveying the object to be processed and the flow rate of the gas supplied from the gas supply device are set.

  (Step S9): After the workpiece is transported to the vacuum side transport container, the infrared lamp is turned off.

  (Step S10): The on-off valve installed between the gas supply device and the vacuum-side transfer container is closed. Thereafter, the supply of gas from the gas supply device is stopped.

  Through the above steps, dry cleaning can be performed while suppressing pattern collapse or reattachment of foreign matters or metal contaminants to the object to be processed.

  As described above, according to the present embodiment, in the dry cleaning, foreign matters or metal contaminants can be removed uniformly within the wafer surface. Furthermore, it is possible to suppress the pattern collapse and the reattachment of the removed foreign matter or metal contaminant to the object to be processed. Thereby, the manufacturing yield of the semiconductor device can be improved.

  As mentioned above, the invention made by the present inventor has been specifically described based on the embodiment. However, the present invention is not limited to the embodiment, and various modifications can be made without departing from the scope of the invention. Needless to say.

  For example, although the vacuum processing apparatus combined with the etching apparatus has been described in the above embodiment, the present invention is not limited to this. For example, a vacuum processing apparatus combined with a CVD (Chemical Vapor Deposition) apparatus in which a wafer is introduced into a film formation processing unit via a vacuum-side transfer container may be used to remove foreign substances or metal contaminants and reattach them to the object to be processed. Can be suppressed.

100 Vacuum processing apparatus 101 Vacuum side block 102 Atmosphere side blocks 103a and 103b Etching unit (processing chamber)
104 Adsorption processing device 105 Vacuum side transfer container (vacuum transfer chamber)
106a Load lock chamber 106b Unload lock chamber 107 Atmosphere side transfer container 108 Cassette mounting table 109a, 109b Cassette 110 Desorption processing device 111 Gas supply device 205 Wafer mounting electrode 206 Processing chamber 207 Radical supply source 208 Dispersion plate 209 Wafer 210 Heating unit 212 Conveyor wand (conveyor)
301 Opening 302 Infrared Lamp 402 Infrared Transmission Window 403 Gas Pool 404 Gas Guide Plate (Gas Supply Direction Control Plate)

Claims (11)

A processing chamber;
A vacuum transfer chamber that is a transfer chamber for transferring an object to be processed in a vacuum atmosphere and connected to the process chamber ;
An adsorption treatment device for adsorbing radicals on the object to be treated;
A gas supply device for supplying gas to the object to be processed and connected to the vacuum transfer chamber ;
A desorption treatment device disposed between the adsorption treatment device and the gas supply device by desorbing a surface layer formed by adsorption of the radicals ;
With
The vacuum processing apparatus includes a transport device that transports the object to which the radical is adsorbed in a first direction from the adsorption processing device to the vacuum transport chamber . The vacuum processing apparatus according to claim 1,
The speed at which the object to be processed on which the radicals are adsorbed and the flow rate of the gas supplied from the gas supply device are obtained based on the size of foreign matter or the type of contaminants attached to the object to be processed. A vacuum processing apparatus. The vacuum processing apparatus according to claim 1,
The desorption processing apparatus comprises a lamp for heating the object to be processed, wherein the radicals are adsorbed,
A dimension of the lamp in the second direction is larger than a dimension of the lamp in the first direction;
The vacuum processing apparatus , wherein the second direction is a direction orthogonal to the first direction on a plane including the object to be processed . The vacuum processing apparatus according to claim 3.
The dimensions of the second direction of the lamp, a vacuum processing apparatus wherein the greater than the dimensions of the second direction of the object to be processed. The vacuum processing apparatus according to claim 1,
The gas supply apparatus comprises a said gas and an ejection port which is an opening of the gas gas reservoir to be supplied to the object to be processed,
The dimension of the opening in the second direction is larger than the dimension of the opening in the first direction,
The vacuum processing apparatus , wherein the second direction is a direction orthogonal to the first direction on a plane including the object to be processed . The vacuum processing apparatus according to claim 5 , wherein
Dimension in the second direction of the opening, the vacuum processing apparatus wherein the greater than the dimensions of the second direction of the object to be processed. The vacuum processing apparatus according to claim 5 , wherein
The vacuum processing apparatus characterized by control plates for supplying the gas to the first direction and the opposite direction is disposed in the opening. The vacuum processing apparatus according to claim 5 , wherein
The gas, a vacuum processing apparatus which is a nitrogen gas, oxygen gas or a noble gas. Dry cleaning methods odor removing foreign matter or contaminants adhering to the workpiece Te,
Adsorbing radicals on the object to be treated;
While conveying the object to be processed, wherein the radicals are adsorbed in a first direction, and a step of supplying a gas a surface layer formed by adsorption of the radical to the object to be processed with desorbed,
The dry cleaning method according to claim 1, wherein the gas is supplied in a direction opposite to the first direction. The dry cleaning method according to claim 9,
Speed, the dry cleaning method characterized in that it is determined based on the type of size or contaminants of the foreign matter adhering the object to be processed to flow and the radical of the gas transporting the object to be processed adsorbed. The dry cleaning method according to claim 9,
It said surface layer Ri by the irradiation with light of a lamp is desorbed,
The dimensions of the second direction of the lamp is much larger than the dimension of the first direction of the lamp,
The dry cleaning method , wherein the second direction is a direction orthogonal to the first direction on a plane including the object to be processed .

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