JP6770887B2 - Board processing equipment and board processing system - Google Patents

Description

The present invention relates to a substrate processing apparatus and a substrate processing system.

Conventionally, in the manufacturing process of a semiconductor substrate (hereinafter, simply referred to as “substrate”), various treatments are applied to a substrate having an insulating film such as an oxide film by using a substrate processing apparatus. For example, by supplying a treatment liquid to a substrate on which a resist pattern is formed on the surface, a treatment such as etching is performed on the surface of the substrate. Further, after the etching or the like is completed, a process of removing the resist on the substrate is also performed.

The substrate processed by the substrate processing apparatus is subjected to a dry process such as dry etching and plasma CVD (Chemical Vapor Deposition) before being carried into the substrate processing apparatus. In such a dry process, an electric charge is generated in the device to be charged, so that the substrate is carried into the substrate processing apparatus in a charged state (so-called carry-on charging). Then, in the substrate processing apparatus, when a processing liquid having a small specific resistance such as SPM liquid is supplied onto the substrate, the electric charge in the device rapidly moves from the device to the processing liquid (that is, into the processing liquid). , And the heat generated by the movement may cause damage to the device.

Therefore, an antistatic device for preventing charge on a substrate has been conventionally used (for example, Patent Document 1). This antistatic device includes a gas supply path and an irradiation unit. The irradiation unit irradiates the glass substrate with ultraviolet rays. The gas supply path communicates with the space between the glass substrate and the irradiation unit. A gas containing oxygen is supplied to the space through this gas supply path. By irradiating the glass substrate with ultraviolet rays in this state, the surface of the glass substrate becomes hydrophilic and charging of the glass substrate is prevented. In addition, the ultraviolet rays change the oxygen in the space into ozone. This ozone promotes the hydrophilicity of the glass substrate.

Further, in semiconductor manufacturing, a treatment using a treatment liquid is performed on the surface of a substrate. Depending on the type of the treatment liquid, organic substances contained in the treatment liquid may remain on the substrate as impurities.

Therefore, conventionally, an apparatus for removing organic substances on a substrate by using ultraviolet rays has also been used (for example, Patent Document 2). In Patent Document 2, an excimer lamp is used. This excimer lamp can irradiate ultraviolet rays having a wavelength of, for example, 172 [nm]. The excimer lamp irradiates the substrate to which the organic substance is attached with this ultraviolet ray. This decomposes and removes organic matter on the substrate.

Patent Documents 3 to 7 are presented as techniques related to the present invention.

Japanese Unexamined Patent Publication No. 2008-60221 Japanese Unexamined Patent Publication No. 2011-204944 Japanese Unexamined Patent Publication No. 7-22530 Japanese Unexamined Patent Publication No. 2011-233774 Japanese Unexamined Patent Publication No. 2011-129583 Japanese Unexamined Patent Publication No. 2010-251596 Japanese Unexamined Patent Publication No. 2011-124410

In the substrate processing apparatus, when two processing chambers are formed and both a substrate holding portion and an ultraviolet light source are provided in each processing chamber, the size of the entire apparatus becomes large.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a substrate processing apparatus capable of suppressing an increase in size while performing a plurality of treatments using ultraviolet rays.

In order to solve the above problems, the substrate processing apparatus according to the first aspect includes an ultraviolet irradiation means, a first substrate holding means, a second substrate holding means, a light shielding means, a first gas supply means, and a first. Provided with a means of transportation . The ultraviolet irradiation means is located at the boundary between the first treatment chamber and the second treatment chamber, and can irradiate the first treatment chamber and the second treatment chamber with ultraviolet rays. The first substrate holding means is arranged in the first processing chamber and holds the substrate so as to face the ultraviolet irradiation means. The second substrate holding means is arranged in the second processing chamber and holds the substrate so as to face the ultraviolet irradiation means.

Light means shielding the space between the ultraviolet irradiation means and the second substrate holding means are arranged so as to partition into a first space and a second space of the second substrate holding means side of the ultraviolet irradiation unit side The atmosphere in the first space and the atmosphere in the second space are communicated with each other while blocking the ultraviolet rays from the ultraviolet irradiation means. The first gas supply means supplies gas to the first space .

Light unit shielding includes a first plate portion and a second plate portion having a light shielding property for ultraviolet light. At least one first through hole is formed in the first plate portion. At least one second through hole is formed in the second plate portion. The first plate portion and the second plate portion are spaced apart from each other in an arrangement in which the positions of at least one first through hole and at least one second through hole are displaced from each other in the direction parallel to the respective plate surfaces. Are placed facing each other.

In the first moving means, at least one first through hole and at least one second through hole are displaced from each other, and at least one first through hole and at least one second through hole are positioned with each other. The first plate portion and the second plate portion are relatively moved to and from the matching second position.

The substrate processing apparatus according to the second aspect is the substrate processing apparatus according to the first aspect, in which at least one first through hole includes a plurality of first through holes and at least one second through hole is plural. Includes a second through hole in. At the second position, the plurality of first through holes face one-to-one with the plurality of second through holes.

The substrate processing apparatus according to the third aspect is the substrate processing apparatus according to the first or second aspect, further comprising a third substrate holding means, and the third substrate holding means includes a light shielding means and an ultraviolet irradiation means. In between, the substrate is held so as to face the ultraviolet irradiation means.

The substrate processing apparatus according to the fourth aspect is the substrate processing apparatus according to any one of the first to third aspects, and further includes a second gas supply means. The second gas supply means supplies gas to the first processing chamber.
The substrate processing apparatus according to the fifth aspect includes an ultraviolet irradiation means, a first substrate holding means, a second substrate holding means, at least one reflecting means, and a second moving means. The ultraviolet irradiator is located at the boundary between the first treatment chamber and the second treatment chamber, and can irradiate the first treatment chamber and the second treatment chamber with ultraviolet rays. The first substrate holding means is arranged in the first processing chamber and holds the substrate so as to face the ultraviolet irradiation means. The second substrate holding means is arranged in the second processing chamber and holds the substrate so as to face the ultraviolet irradiation means. The at least one reflecting means is arranged in at least one of the first processing chamber and the second processing chamber, and reflects the ultraviolet rays from the ultraviolet irradiation means to the other. The second moving means moves at least one reflecting means between a position where at least one reflecting means faces the ultraviolet irradiation means and a position where at least one reflecting means does not face the ultraviolet irradiation means.
The substrate processing apparatus according to the sixth aspect is the substrate processing apparatus according to the fifth aspect, and includes a first gas supply means and a second gas supply means. The first gas supply means supplies gas to the first processing chamber. The second gas supply means supplies gas to the second processing chamber.

The substrate processing apparatus according to the seventh aspect is the substrate processing apparatus according to the fourth or sixth aspect, and at least one of the first gas supply means and the second gas supply means can supply a plurality of types of gases. Selectively supply.

The substrate processing apparatus according to the eighth aspect is the substrate processing apparatus according to any one of the first to seventh aspects, and further includes a fourth substrate holding means. The fourth substrate holding means holds the substrate on which the low-dielectric film is formed between the second substrate holding means and the ultraviolet irradiation means so as to face the ultraviolet irradiation means.

The substrate processing apparatus according to the ninth aspect is the substrate processing apparatus according to any one of the first to eighth aspects, and the first substrate holding means is the first main surface on which the low dielectric film is formed. The substrate having the second main surface on which the low-dielectric film is not formed is held in a posture in which the second main surface is directed toward the ultraviolet irradiation means.

The substrate processing system according to a tenth embodiment of the container holding portion for holding a container for accommodating a substrate, and a substrate processing unit for performing processing using the processing solution to the substrate, and the yield container holder and a substrate passage portion through which the substrate back and forth between the base plate unit. The substrate passing portion is provided with a substrate processing apparatus according to any one of the first to ninth aspects.

The substrate processing system according to the eleventh aspect is the substrate processing system according to the tenth aspect, and includes a first transfer means and a second transfer means. The first transport means delivers the substrate between each of the first substrate holding means and the second substrate holding means and the container holding portion. The second transport means delivers the substrate between each of the first substrate holding means and the second substrate holding means and the substrate processing unit.

The substrate processing system according to the twelfth aspect is the substrate processing system according to the eleventh aspect, and the first transport means holds the substrate from the container holding portion of the first substrate holding means and the second substrate holding means. The substrate is passed to one side, and the substrate is passed from the other of the first substrate holding means and the second substrate holding means to the container holding portion. The second transport means passes the substrate from one of the first substrate holding means and the second substrate holding means to the substrate processing unit, and from the substrate processing unit to the other of the first substrate holding means and the second substrate holding means. Pass the board.

According to the substrate processing apparatus, processing using ultraviolet rays can be performed in the first processing chamber and the second processing chamber. Moreover, the ultraviolet irradiation means can be shared by the first processing chamber and the second processing chamber. Therefore, the size of the substrate processing apparatus can be reduced as compared with the case where the ultraviolet irradiation means is separately arranged in the first processing chamber and the second processing chamber.

It is a figure which shows the example of the structure of the substrate processing system schematicly. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a figure which shows typically an example of the structure of the light shielding part. It is a flowchart which shows an example of the operation of a substrate processing system. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a flowchart which shows an example of the operation of a substrate processing system. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a figure which shows typically an example of the structure of the substrate processing apparatus. It is a graph which shows an example of the relationship between the absorption rate of a low dielectric film and a wave number. It is a graph which shows an example of the relationship between the absorption rate of a low dielectric film and a wave number. It is a graph which shows an example of the relationship between a surface charge and an irradiation time. It is a graph which shows an example of the relationship between a surface charge and an irradiation time. It is a figure which shows typically an example of the structure of the substrate processing apparatus.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

The first embodiment.
<Example of the overall configuration of the board processing system>
FIG. 1 is a diagram schematically showing an example of the overall configuration of the substrate processing system 100. In addition, in FIG. 1 and each subsequent drawing, the dimensions and numbers of each part are exaggerated or simplified as necessary for easy understanding.

The substrate processing system 100 is an apparatus for performing various processing on a semiconductor substrate. The substrate processing system 100 includes, for example, a container holding unit 110, a substrate passing unit 120, and a substrate processing unit 130. The container holding unit 110 holds the substrate container. For example, a plurality of substrates are accommodated in this substrate container. In the example of FIG. 1, a plurality of container holding portions 110 are provided, and these are arranged along one direction (hereinafter, also referred to as X direction) parallel to the horizontal plane.

The substrate processing unit 130 is a device for performing a predetermined process on the substrate. In the example of FIG. 1, a plurality of substrate processing units 130 (board processing units 130a to 130d in the illustrated example) are provided. The substrate processing units 130a to 130d each perform various processing on the substrate. For convenience of explanation, it is assumed that each substrate is processed in the order of the substrate processing units 130a to 130d. For example, the substrate processing unit 130a supplies a treatment liquid (a treatment liquid such as a chemical solution, a rinse solution, or an IPA (isopropyl alcohol) solution) to the substrate. As a result, the processing according to the processing liquid is performed on the substrate. It is not desirable that the charge is accumulated on the substrate for the subsequent processing in the substrate processing unit 130c. Further, the treatment by the substrate processing unit 130b (for example, the treatment using IPA) may leave organic substances as impurities on the main surface of the substrate, and it is desirable to remove such organic substances.

The substrate passing portion 120 is located between the container holding portion 110 and each of the substrate processing portions 130a to 130d. The unprocessed substrate is passed from the container holding unit 110 to the substrate processing unit 130a via the substrate passing unit 120. The processed substrate processed by the substrate processing unit 130a is passed from the substrate processing unit 130a to the container holding unit 110 or another substrate processing unit 130b via the substrate passing unit 120. The same applies to the time-sequential transfer of the substrate between the substrate processing units 130b to 130d.

The substrate passing portion 120 includes, for example, an indexer robot 121, a pass portion 122, and a transfer robot 123. The indexer robot 121 can reciprocate in the X direction on the indexer transport path 124 described below. The indexer transport path 124 is a transport path that extends in the X direction adjacent to the plurality of container holding portions 110. The indexer robot 121 can be stopped at a position facing each container holding portion 110 in the indexer transport path 124.

The indexer robot 121 has, for example, an arm and a hand. The hand is provided at the tip of the arm and can hold the board or release the held board. By driving the arm, the hand can reciprocate in a direction parallel to the horizontal plane and perpendicular to the X direction (hereinafter, also referred to as the Y direction). The indexer robot 121 moves the hand to the container holding unit 110 while facing the container holding unit 110 to take out the unprocessed substrate from the container holding unit 110, or removes the processed substrate from the container holding unit 110. It can be passed to the holding unit 110.

The pass portion 122 is located on the side opposite to the container holding portion 110 with respect to the indexer transport path 124. For example, the pass portion 122 may be formed at a position facing the central portion of the indexer transport path 124 in the X direction. For example, the path portion 122 may have a mounting table or a shelf on which a substrate is mounted. The indexer robot 121 can rotate the arm 180 degrees in a horizontal plane. As a result, the indexer robot 121 can move the hand to the pass portion 122. The indexer robot 121 can pass the board taken out from the container holding part 110 to the pass part 122, or take out the board placed on the pass part 122 from the pass part 122.

The transfer robot 123 is provided on the side opposite to the indexer transfer path 124 with respect to the path portion 122. Further, a plurality of (four in FIG. 1) substrate processing units 130 are arranged so as to surround the transfer robot 123. In the example of FIG. 1, a fluid box 131 adjacent to each of the substrate processing units 130 is provided. The fluid box 131 can supply the processing liquid to the adjacent substrate processing unit 130 and collect the used processing liquid from the substrate processing unit 130.

Like the indexer robot 121, the transfer robot 123 also has an arm and a hand. The transfer robot 123 can take out the substrate from the pass portion 122 or pass the substrate to the pass portion 122. Further, the transfer robot 123 can pass the substrate to each substrate processing unit 130 and take out the substrate from each substrate processing unit 130. The indexer robot 121 and the transfer robot 123 can be regarded as transfer means for transporting the substrate.

With these configurations, for example, the following general operation can be performed. That is, each semiconductor substrate housed in the container holding unit 110 is sequentially conveyed to the path unit 122 by the indexer robot 121. Then, the substrate is sequentially conveyed to the substrate processing units 130a to 130d by the transfer robot 123, and receives the respective processing in the substrate processing units 130a to 130d. The substrate that has completed the series of processes is returned to the container holding portion 110 by the pass portion 122 and the indexer robot 121.

<Board processing equipment>
2 and 3 are diagrams schematically showing an example of the configuration of the substrate processing device 10. The substrate processing device 10 may be provided, for example, in the path portion 122. FIG. 2 shows, for example, a cross section perpendicular to the Y direction, and FIG. 3 shows a cross section perpendicular to, for example, the X direction. The substrate processing apparatus 10 does not necessarily have to be provided in the pass portion 122, and may be provided as, for example, the substrate processing portion 130d. In other words, the substrate processing apparatus 10 may be provided as a part of the plurality of substrate processing units 130.

The substrate processing device 10 includes a chamber 1, an ultraviolet irradiator 2, substrate holding units 31 and 32, gas supply units 41 and 42, a light shielding unit 5, and exhaust units 61 and 62.

Chamber 1 has processing chambers 11 and 12. The processing chambers 11 and 12 are formed adjacent to each other, for example, in the vertical direction (hereinafter, also referred to as the Z direction). An ultraviolet irradiator 2 is provided at the boundary between the treatment chambers 11 and 12. That is, the processing chambers 11 and 12 are separated by the ultraviolet irradiator 2.

The ultraviolet irradiator 2 generates ultraviolet rays, and it is possible to irradiate any of the treatment chambers 11 and 12 with the ultraviolet rays. As the ultraviolet irradiator 2, for example, an excimer UV (ultraviolet) lamp can be adopted. The ultraviolet irradiator 2 includes, for example, a quartz tube filled with a gas for discharge (for example, a rare gas or a rare gas halogen compound) and a pair of electrodes housed in the quartz tube. The gas for discharge exists between the pair of electrodes. By applying a high voltage at a high frequency between the pair of electrodes, the discharge gas is excited and becomes an excimer state. The discharge gas generates ultraviolet rays when returning from the excimer state to the ground state.

The ultraviolet irradiator 2 may be formed in a flat plate shape, for example. The ultraviolet irradiator 2 is arranged, for example, in a posture in which its normal direction is along the Z direction. In other words, the ultraviolet irradiator 2 is a surface light source arranged horizontally. Alternatively, the ultraviolet irradiator 2 may be provided as an array of a plurality of columnar ultraviolet unit irradiators. For example, each of the plurality of ultraviolet unit irradiators is arranged so that its central axis is along the X direction. In this case, the plurality of ultraviolet unit irradiators are arranged in parallel along the Y direction. That is, in this aspect, the horizontal arrangement of the plurality of UV unit irradiators constitutes a substantial surface light source.

Protective quartz glass plates Ga and Gb may be provided on the treatment chambers 11 and 12 of the ultraviolet irradiator 2, respectively. That is, the ultraviolet irradiator 2 may be located between the pair of quartz glass plates Ga and Gb as a heat-resistant and erosive plate-like body having translucency against ultraviolet rays. These quartz glass plates Ga and Gb can protect the ultraviolet irradiator 2 against external forces and the atmosphere inside the treatment chambers 11 and 12.

One of the substrate holding portions 31 is arranged in the first processing chamber 11. The substrate holding portion 31 holds the substrate W1 so that the main surface of the substrate W1 faces the ultraviolet irradiator 2. When the substrate W1 is a semiconductor substrate (that is, a semiconductor wafer), the substrate W1 has a substantially circular flat plate shape, and the substrate holding portion 31 horizontally holds the substrate W1 in a manner of supporting the outer edge portion of the substrate W1.

Although the specific configuration of the substrate holding portion 31 is not particularly limited, it may be formed on the inner surface of the chamber 1, for example. In the example of FIG. 2, groove-shaped recesses are formed on the pair of inner surfaces of the inner surface of the chamber 1 facing each other. These recesses are formed at substantially the same height in the Z direction. Then, both ends of the substrate W1 in the radial direction enter the recesses. The substrate W1 is supported on the vertically lower surface of the recess. That is, this recess functions as the substrate holding portion 31.

The other substrate holding portion 32 is provided in the second processing chamber 12. The substrate holding portion 32 holds the substrate W2 so that the main surface of the substrate W2 faces the ultraviolet irradiator 2. The substrate W2 also has, for example, a flat circular shape. The board holding portion 32 also holds the board W2 horizontally. Although the specific configuration of the substrate holding portion 32 is not particularly limited, it may have the same configuration as the substrate holding portion 31, for example.

The gas supply unit 41 shown in FIG. 3 supplies gas to the first processing chamber 11. The gas supply unit 41 includes, for example, pipes 411 to 413, gas storage units 414, 415, and on-off valves 416 and 417. A through hole 11a for supplying air is formed in, for example, the side wall of the chamber 1. The through hole 11a communicates the processing chamber 11 with one end of the pipe 411. The other end of the pipe 411 is connected to each of the ends of the pipes 421 and 413. The other end of the pipe 412 is connected to the gas accommodating portion 414, and the other end of the pipe 413 is connected to the gas accommodating portion 415. The gas accommodating portions 414 and 415 are, for example, cylinders, each accommodating different gases. For example, the gas storage unit 414 contains an inert gas (for example, nitrogen or argon), and the gas storage unit 415 contains oxygen. Alternatively, a mixed gas containing a plurality of types of gas components may be contained in each of the gas accommodating portions 414 and 415. For example, air containing oxygen and nitrogen may be contained in each of the gas accommodating portions 414 and 415, and the mixing ratio thereof may be different in the gas accommodating portions 414 and 415. The on-off valve 416 is provided in the pipe 412, and the on-off valve 417 is provided in the pipe 413. The on-off valves 416 and 417 switch the opening and closing of the pipes 421 and 413, respectively.

For example, when the on-off valve 416 opens and the on-off valve 417 closes, the gas (for example, nitrogen) contained in the gas accommodating portion 414 is supplied to the processing chamber 11. On the other hand, when the on-off valve 416 is closed and the on-off valve 417 is opened, the gas (for example, oxygen) contained in the gas accommodating portion 415 is supplied to the processing chamber 11.

The exhaust unit 61 has a pipe 611. A through hole 11b for exhaust is formed in, for example, a side wall of the chamber 1. The through hole 11b communicates the processing chamber 11 with one end of the pipe 611. The gas in the processing chamber 11 is exhausted to the outside through the pipe 611.

The gas supply unit 42 supplies gas to the processing chamber 12. The gas supply unit 42 includes pipes 421 to 423, gas storage units 424 and 425, and on-off valves 426 and 427. The pipes 421 to 423, the gas storage parts 424, 425 and the on-off valves 426, 427 are the same as the pipes 411 to 413, the gas storage parts 414, 415 and the on-off valves 416, 417, respectively, except for the communication destination at one end of the pipe 421. Is. One end of the pipe 421 communicates with the through hole 12a for air supply. The through hole 12a is formed in the side wall of the chamber 1, for example, and communicates one end of the pipe 421 with the processing chamber 12.

The gas supply unit 42 also appropriately controls the opening and closing of the on-off valves 426 and 427 to selectively supply different gases (for example, inert gas (for example, nitrogen or argon) and oxygen) to the processing chamber 12. can do.

The exhaust unit 62 has a pipe 621. A through hole 12b for exhaust is formed in, for example, a side wall of the chamber 1. The through hole 12b communicates the processing chamber 12 with one end of the pipe 621. The gas in the processing chamber 12 is exhausted to the outside through the pipe 621.

The light-shielding portion 5 is arranged in the processing chamber 12. More specifically, the light-shielding portion 5 is arranged so as to partition the space between the ultraviolet irradiator 2 and the substrate W2 into a space on the ultraviolet irradiator 2 side and a space on the substrate holding portion 32 side. In other words, the substrate holding portion 32 holds the substrate W2 so that the main surface of the substrate W2 faces the ultraviolet irradiator 2 with the light shielding portion 5 in between. The light-shielding portion 5 is appropriately fixed to the chamber 1.

The light-shielding portion 5 allows gas to pass through while blocking ultraviolet rays. The light-shielding portion 5 has plate portions 51 and 52. FIG. 4 is a diagram schematically showing a part of the configuration of the light-shielding portion 5 as viewed along the Z direction. The plate portions 51 and 52 have a plate-like shape. Further, through holes 511, 521 are formed in the plate portions 51 and 52, respectively. The through holes 511 and 521 penetrate the plate portions 51 and 52 along the thickness direction thereof, respectively. The plate portions 51 and 52 have a light-shielding property against ultraviolet rays. For example, the plate portions 51 and 52 may be provided with a filter for blocking ultraviolet rays on the surface thereof. However, the filter is not provided in the through holes 511 and 521.

These plate portions 51 and 52 are arranged so that their thickness directions are along the Z direction. That is, the plate portions 51 and 52 are arranged horizontally. Further, the plate portions 51 and 52 are arranged so as to face each other at intervals. The plate portion 51 is arranged on the ultraviolet irradiator 2 side with respect to the plate portion 52. In the example of FIG. 4, a plurality of through holes 511 and 521 are formed. The plurality of through holes 511 are formed at the following positions. That is, through holes 511 are formed at each of the four vertices of the virtual quadrangle and the center of gravity of the quadrangle, and the plurality of through holes 511 are dispersed so that the positional relationship repeats in the X direction and the Y direction. Is formed. The same applies to the plurality of through holes 521.

The plate portions 51 and 52 are arranged so that the positions of the through holes 511 and the positions of the through holes 521 are displaced from each other in the direction parallel to the plate surface. That is, the plate portions 51 and 52 are arranged so that none of the through holes 511 faces any of the through holes 521 in the Z direction.

The space 12A between the light-shielding portion 5 and the ultraviolet irradiator 2 and the space 12B between the light-shielding portion 5 and the substrate W2 communicate with each other via the light-shielding portion 5. Specifically, the spaces 12A and 12B communicate with each other by the spaces between the through holes 511 and 521 and the plate portions 51 and 52. As a result, the gas can flow from the space 12A through the light-shielding portion 5 to the space 12B.

On the other hand, since the positions of the through holes 511 and 521 are deviated from each other, the ultraviolet rays from the ultraviolet irradiator 2 are blocked by the light shielding portion 5. Specifically, a part of the ultraviolet rays from the ultraviolet irradiator 2 is blocked by the plate portion 51, and the other part of the ultraviolet rays passes through the through hole 511 but is blocked by the plate portion 52. Therefore, it is difficult for ultraviolet rays to irradiate the main surface of the substrate W2. That is, the light-shielding portion 5 is a light-shielding and breathable plate-shaped element.

In the example of FIG. 3, the through hole 12a for air supply is provided at a position suitable for supplying gas to the space 12A. Since the space 12A is irradiated with the ultraviolet rays from the ultraviolet irradiator 2, the ultraviolet rays can be effectively applied to the gas supplied by the gas supply unit 42. When the gas supply unit 42 supplies oxygen, ultraviolet rays effectively act on oxygen, so that ozone can be effectively generated. This ozone passes through the light-shielding portion 5 and acts on the substrate W2.

The chamber 1 is provided with a shutter (not shown) that functions as an entrance / exit for the substrates W1 and W2. When the shutter is opened, the processing chambers 11 and 12 communicate with the outside, and when the shutter is closed, the processing chambers 11 and 12 are sealed. The shutters may be provided individually for the processing chambers 11 and 12. That is, when the first shutter is opened, the processing chamber 11 may communicate with the outside, and when the second shutter is opened, the processing chamber 12 may communicate with the outside.

When the substrate processing device 10 is arranged in the pass portion 122, for example, a shutter for the indexer robot 121 and a shutter for the transfer robot 123 may be provided. The indexer robot 121 and the transfer robot 123 can move the substrate in and out via the corresponding shutter. The indexer robot 121 and the transfer robot 123 can reciprocate the arm and the handle in the Z direction, respectively. As a result, the indexer robot 121 and the transfer robot 123 can move the arm and the handle to heights suitable for the substrate holding portions 31 and 32, respectively. As a result, the indexer robot 121 and the transfer robot 123 can pass the substrate to each of the substrate holding portions 31 and 32, and can take out the substrate from each of the substrate holding portions 31 and 32.

The ultraviolet irradiator 2, the on-off valves 416, 417, 426, 427 and the shutter are controlled by the control unit 7.

The control unit 7 is an electronic circuit device, and may include, for example, a data processing device and a storage medium. The data processing device may be, for example, an arithmetic processing device such as a CPU (Central Processor Unit). The storage unit may have a non-temporary storage medium (for example, ROM (Read Only Memory) or hard disk) and a temporary storage medium (for example, RAM (Random Access Memory)). For example, a program that defines the processing executed by the control unit 7 may be stored in the non-temporary storage medium. When the processing device executes this program, the control unit 7 can execute the processing specified in the program. Of course, a part or all of the processing executed by the control unit 7 may be executed by the hardware.

According to such a substrate processing apparatus 10, processing of the substrate using ultraviolet rays can be performed in the processing chambers 11 and 12, respectively. Moreover, the ultraviolet irradiator 2 can irradiate any of the processing chambers 11 and 12 with ultraviolet rays. That is, the ultraviolet irradiator 2 is shared by the processing chambers 11 and 12. Therefore, the size of the substrate processing apparatus 10 can be reduced and the manufacturing cost can be reduced as compared with the case where the individual ultraviolet irradiators 2 are provided in the processing chambers 11 and 12.

<Example of substrate processing operation>
Next, an example of a specific operation in the substrate processing apparatus 10 will be described. FIG. 5 is a flowchart showing an example of a specific operation of the substrate processing device 10. FIG. 5 illustrates an example of the operation when the processes in the processing chambers 11 and 12 are performed in parallel. First, in step S1, the substrates W1 and W2 are arranged in the chamber 1. Specifically, the shutter and the indexer robot 121 or the transfer robot 123 are controlled so that the control unit 7 performs the following operations. That is, the shutter of the chamber 1 is opened, the substrates W1 and W2 are arranged on the substrate holding portions 31 and 32, respectively, via the opened shutter, and then the shutter is closed.

Next, in step S2, the control unit 7 opens, for example, the on-off valves 416 and 427, and closes the on-off valves 417 and 426. As a result, the gas (here, nitrogen) contained in the gas accommodating portion 414 is supplied to the processing chamber 11, and the gas (here, oxygen) contained in the gas accommodating portion 425 is supplied to the processing chamber 12. To. Note that step S2 may be executed before step S1.

Next, in step S3, the control unit 7 irradiates the ultraviolet irradiator 2 with ultraviolet rays. Even if the control unit 7 executes step S3 when the atmosphere in the processing chambers 11 and 12 (particularly the air between the substrates W1 and W2 and the ultraviolet irradiator 2) becomes a predetermined atmosphere. Good. For example, the control unit 7 measures the elapsed time from step S2. Timekeeping of elapsed time can be done by a timekeeping circuit such as a timer circuit. The control unit 7 may determine whether or not the elapsed time is larger than a predetermined reference value, and when it makes a positive determination, may execute step S3. Alternatively, the atmosphere in the processing chambers 11 and 12 may be measured.

FIG. 6 schematically shows the state of the substrate processing apparatus 10 in step S3. In FIG. 6, it is indicated by arrows at both ends that the ultraviolet irradiator 2 irradiates the treatment chambers 11 and 12 with ultraviolet rays.

The ultraviolet rays are applied to the main surface of the substrate W1 in the processing chamber 11. As a result, the electric charge accumulated on the substrate W1 is removed. It is believed that one of the reasons for the charge being removed is that the photoelectric effect caused by ultraviolet rays occurs in the substrate W1. As the wavelength of ultraviolet rays, for example, a wavelength of 252 [nm] or less can be adopted. This is because the electric charge of the substrate W1 can be effectively removed in this wavelength range. As a more effective wavelength, a wavelength within 172 ± 20 [nm] can be adopted.

The ultraviolet rays from the ultraviolet irradiator 2 also irradiate the processing chamber 12. This ultraviolet ray is absorbed by oxygen between the ultraviolet irradiator 2 and the light shielding portion 5. As a result, ozone is generated. Ozone passes through the light-shielding portion 5 and acts on the main surface of the substrate W2. In the example of FIG. 6, this ozone flow is schematically represented by an arrow attached in the vicinity of the molecular formula. By the action of ozone on the main surface of the substrate W2, the organic substances existing on the main surface of the substrate W2 can be oxidized, and the organic substances can be decomposed and removed.

On the other hand, since the ultraviolet rays are blocked by the light-shielding portion 5, the ultraviolet rays radiated to the substrate W2 can be reduced or avoided. According to this, it is possible to reduce the damage to the substrate W2 due to the ultraviolet rays as described below. For example, a low dielectric film may be formed on the main surface of the substrate W2. This low-dielectric film is also called a Low-k film. As the material of this low-dielectric film, an organic compound containing SiO ₂ can be adopted. A Si—C bond is present in this organic compound. The binding energy of the Si—C bond is 293 [kJ / mol] at, for example, 0 [K]. On the other hand, the energy of ultraviolet rays having a wavelength of 172 nm is 694 [kJ / min], which can be higher than the binding energy of Si—C. Therefore, the Si—C bond can be broken by irradiating the main surface of the substrate W2 with ultraviolet rays. As a result, the k value (dielectric constant) of the low dielectric film can be increased. That is, ultraviolet rays may cause damage to the substrate W2 (for example, breaking the Si—C bond). When this k value increases, wiring delay occurs in the manufactured semiconductor device, and the response speed decreases. On the other hand, in the example of FIG. 6, since the light-shielding portion 5 blocks ultraviolet rays, the damage to the substrate W2 can be suppressed.

With reference to FIG. 5 again, in step S4, the control unit 7 determines whether or not the process should be terminated. For example, the control unit 7 may determine that the process should be terminated when the elapsed time from step S3 exceeds the predetermined time. When it is determined that the process should not be completed, the control unit 7 executes step S4 again. When it is determined that the process should be completed, the control unit 7 stops the ultraviolet irradiator 2 in step S5. Next, in step S6, the control unit 7 closes the on-off valve 427 and opens the on-off valve 426. As a result, the gas (here, nitrogen) contained in the gas accommodating portion 424 is supplied to the processing chamber 12. As a result, ozone is properly exhausted.

As described above, according to this operation, the processing can be performed in the processing chambers 11 and 12 while using the single ultraviolet irradiator 2.

<Irradiation of the back surface of the substrate>
When a low-dielectric film is formed on one main surface (hereinafter, also referred to as a front surface) of the substrate W1 and no low-dielectric film is formed on the other main surface (hereinafter, also referred to as a back surface), the substrate holding portion 31 may: The substrate W1 may be held with the back surface of the substrate W1 facing the ultraviolet irradiator 2. In other words, the control unit 7 may control the indexer robot 121 or the transfer robot 123 to pass the substrate W1 to the substrate holding unit 31 so that the back surface of the substrate W1 faces the ultraviolet irradiator 2. In the example of FIG. 2, the substrate holding portion 31 is located vertically above the ultraviolet irradiator 2. Therefore, the indexer robot 121 or the transfer robot 123 may transfer the substrate W1 with its surface facing vertically upward, and may arrange the substrate W1 on the substrate holding portion 31 in that posture.

According to this, damage to the low-dielectric film due to ultraviolet rays can be reduced as compared with the case where the surface of the substrate W1 on which the low-dielectric film is formed faces the ultraviolet irradiator 2. This is because the ultraviolet rays are not directly applied to the low dielectric film.

<Round trip via the pass section>
When the substrate processing apparatus 10 is arranged in the pass portion 122, the substrate is used in both the outward path from the container holding unit 110 to the substrate processing unit 130 and the return path from the substrate processing unit 130 to the container holding unit 110. , Via the substrate processing device 10. Therefore, in the substrate processing system 100, for example, the substrate may pass through one of the processing chambers 11 and 12 on the outward route, and the substrate may pass through the other of the processing chambers 11 and 12 on the return route. In other words, for example, the indexer robot 121 may pass the substrate from the container holding unit 110 to one of the substrate holding units 31 and 32, and pass the substrate from the other of the substrate holding units 31 and 32 to the container holding unit 110. .. The transfer robot 123 may pass the substrate from one of them to the substrate processing unit 130 and pass the substrate from the substrate processing unit 130 to the other. According to this, in the reciprocating transfer in the substrate processing system 100, both the processing of the processing chambers 11 and 12 can be performed.

As a specific example, the control unit 7 may control each configuration of the substrate processing system 100 so as to perform the operation described below. For example, the processing chamber 11 is used on the outbound route. Specifically, the indexer robot 121 takes out a substrate from the container holding portion 110 and places the substrate on the substrate holding portion 31 of the processing chamber 11. This substrate is subjected to static elimination treatment as described above in the processing chamber 11. The substrate from which the electric charge has been removed is passed to the substrate processing unit 130 by the transfer robot 123. The substrate processing unit 130 performs processing using the processing liquid on the main surface of the substrate. Since the charge on the substrate has already been removed, the substrate processing unit 130 is less likely to generate arcing due to the processing liquid, and this processing can be appropriately performed.

Depending on the type of treatment liquid, organic substances may remain on the main surface of the substrate. Therefore, the processing chamber 12 is used on the return trip. Specifically, the transfer robot 123 takes out the processed substrate from the substrate processing unit 130 and places the substrate on the substrate holding unit 32 of the processing chamber 12. This substrate is subjected to an organic substance removal treatment as described above in the processing chamber 12. As a result, organic substances on the substrate are removed. The indexer robot 121 takes out the substrate from the processing chamber 12 and passes the substrate to the container holding unit 110.

According to this, suitable processing can be performed in the pass unit 122 before and after the processing of the substrate processing unit 130.

<Oxygen supply to processing chamber 11>
In the above example, nitrogen was supplied to the treatment chamber 11 in step S2. However, this is not always the case. For example, when focusing on the removal of organic substances, oxygen may be supplied to the processing chamber 11. Specifically, the control unit 7 closes the on-off valve 416 and opens the on-off valve 417. As a result, the gas (here, oxygen) contained in the gas accommodating portion 415 is supplied to the processing chamber 11.

FIG. 7 schematically shows an example of the state of the substrate processing apparatus 10 when oxygen is supplied to the processing chambers 11 and 12. In this case, a relatively large amount of ozone is also generated in the processing chamber 11, and this ozone acts on the main surface of the substrate W1. Since ozone acts on the main surface of the substrate W1, the organic substances existing on the main surface of the substrate W1 can be effectively removed.

Since ozone is generated in the processing chamber 11 in the above operation, the supply of oxygen to the processing chamber 11 may be stopped and nitrogen may be supplied in step S6. As a result, ozone in the processing chamber 11 can be appropriately exhausted.

<Modification example>
In the above example, although the light-shielding portion 5 is arranged, the light-shielding portion 5 is not always necessary when the main surface of the substrate W2 may be irradiated with ultraviolet rays. Further, in the above example, although the gas supply units 41 and 42 can selectively supply different types of gas, this is also not an essential requirement. In short, the ultraviolet irradiator 2 may be shared by the processing chambers 11 and 12. This is because the effect of reducing the size of the substrate processing apparatus 10 can be brought about.

The second embodiment.
8 and 9 are diagrams schematically showing an example of the configuration of the substrate processing apparatus 10A. The substrate processing device 10A has a moving mechanism 8, and is different from the substrate processing device 10 in this respect. Note that in FIGS. 8 and 9, the gas supply units 41 and 42 and the exhaust units 61 and 62 are not shown. These may be omitted in other drawings referenced later.

The moving mechanism 8 is arranged in the processing chamber 12. The moving mechanism 8 can relatively move the plate portions 51 and 52. More specifically, the moving mechanism 8 has a first position in which the through holes 511 and 521 are displaced from each other (see FIG. 8) and a second position in which the through holes 511 and 521 face each other in the Z direction (see FIG. 9). The plate portions 51 and 52 are relatively moved between the two. The operation of the moving mechanism 8 is controlled by, for example, the control unit 7. As the moving mechanism 8, for example, a known uniaxial stage (also referred to as an X-axis stage) can be adopted. For example, the moving mechanism 8 moves the plate portion 51.

Further, the distribution of the through holes 511 in the plate portion 51 and the distribution of the through holes 521 in the plate portion 52 differ only in their formation positions, and the forms of distribution correspond to each other. That is, the sizes of the individual through holes 511 and 521 are the same, and the formation interval and the arrangement direction thereof are also the same. Therefore, if one of the plate portions 51 and 52 is shifted in the horizontal direction (Y direction) with respect to the other, the formation positions of the through holes 511 and 521 are aligned with each other.

When the moving mechanism 8 stops the plate portion 52 at the first position (FIG. 8) with respect to the plate portion 51, the ultraviolet rays from the ultraviolet irradiator 2 are emitted by the light-shielding portion 5 as in the first embodiment. Be blocked. On the other hand, when the moving mechanism 8 stops the plate portion 52 at the second position (FIG. 9) with respect to the plate portion 51, the ultraviolet rays from the ultraviolet irradiator 2 pass through the through holes 511 and 521 and pass through the substrate. The main surface of W2 is irradiated. Therefore, ultraviolet rays can act on the main surface of the substrate W2.

As described above, according to the substrate processing apparatus 10A, whether or not to irradiate the main surface of the substrate W2 with ultraviolet rays can be controlled by the positional relationship of the plate portions 51 and 52. For example, the control unit 7 receives information from the outside whether or not a low dielectric film is formed on the main surface of the substrate W2. This information may be included in a so-called recipe (work instruction sheet) that defines the processing content on the substrate. Then, the control unit 7 moves the moving mechanism 8 so that the plate portion 52 stops at the first position (FIG. 8) with respect to the plate portion 51 when the low-dielectric film is formed on the main surface of the substrate W2. May be controlled. On the other hand, when the low-dielectric film is not formed on the main surface of the substrate W2, the control unit 7 moves the moving mechanism 8 so that the plate portion 52 stops at the second position (FIG. 9) with respect to the plate portion 51. May be controlled. According to this, since the main surface of the substrate W2 is irradiated with ultraviolet rays, it is possible to remove the electric charge due to, for example, the photoelectric effect.

As described above, the form of the through-hole distribution is common to the two plate portions 51 and 52, and the plurality of through-holes 511 face each other of the plurality of through-holes 521 in the Z direction at the second position. That is, the plurality of through holes 511 and 521 face each other on a one-to-one basis. In the example shown in FIG. 4, the relative positional relationship of the plurality of through holes 521 as viewed from the Z direction is the same as the relative positional relationship of the plurality of through holes 511. According to this, by moving the plate portions 51 and 52 relatively in the horizontal direction, the plurality of through holes 511 can be made to face the plurality of through holes 521 on a one-to-one basis. As a result, the light-shielding portion 5 can allow ultraviolet rays to pass through in a wider area. Therefore, the main surface of the substrate W2 can be irradiated with ultraviolet rays in a wider range.

Of course, the shapes, sizes, and positional relationships of the plurality of through holes 511 and 521 may be appropriately set, and are not necessarily limited to the aspect of FIG. For example, a plurality of slit-shaped through holes long in the X direction may be arranged side by side in the Y direction instead of the circular through holes 511. The same applies to the through hole 521. At this time, the pitch of the slit-shaped through hole in the plate portion 51 and the pitch of the slit-shaped through hole in the plate portion 52 are set to be substantially the same. According to this, by moving the plate portion 52 with respect to the plate portion 51 in the Y direction, the through hole in the plate portion 51 and the through hole in the plate portion 52 face each other in the Z direction on a one-to-one basis.

The positional alignment of the two sets of through holes in the second position described above does not require an exact match. That is, even if there are some parts that do not match, it does not matter as long as the positions of many through holes match each other and sufficient ultraviolet rays can be transmitted for the treatment. Further, in each of the plate portions 51 and 52, the size of each through hole is small and the interval between the horizontally adjacent through holes is narrow, and the plate portions 51 and 52 are close to "net-like". It shall belong to the concept of "plate-shaped member with through holes". Even if the number of through holes in each of the plate portions 51 and 52 is one, as long as it realizes a spatially selective light transmission distribution such as a reciprocating meandering slit, it is still possible. It doesn't matter. These conditions regarding the shape and distribution of the through holes are applicable not only to this embodiment but also to other embodiments in common.

The substrate holding portion 32 may rotate the substrate W2 about the Z direction as a rotation axis. Specifically, the substrate holding portion 32 may include a stage (not shown) for holding the substrate W2 and a rotation mechanism (not shown) for rotating the stage. The axis of rotation passes through, for example, the center of the substrate W2. A so-called spin chuck can be adopted as such a substrate holding portion 32. According to this, the ultraviolet rays that have passed through the light-shielding portion 5 can act on the main surface of the substrate W2 more uniformly in a wider range.

<Example of board processing operation>
FIG. 10 is a flowchart showing an example of the operation of the substrate processing apparatus 10A. FIG. 10 illustrates an operation when the static elimination treatment of irradiating the main surface of the substrate with ultraviolet rays to remove the electric charge is performed in parallel in the processing chambers 11 and 12. First, in step S11, the substrates W1 and W2 are arranged on the substrate holding portions 31 and 32, respectively, in the same manner as in step S1.

Next, in step S12, the control unit 7 opens the on-off valves 416 and 426 and closes the on-off valves 417 and 427. As a result, the gas (here, nitrogen) contained in the gas accommodating portion 414 is supplied to the processing chamber 11, and the gas (here, nitrogen) contained in the gas accommodating portion 424 is supplied to the processing chamber 12. To.

Next, in step S13, the control unit 7 controls the moving mechanism 8 to relatively move the plate portions 51 and 52 so that the through holes 511 and 521 face each other in the Z direction. The execution order of steps S11 to S13 is not limited to this, and may be changed as appropriate.

Next, in step S14, the control unit 7 irradiates the ultraviolet irradiator 2 with ultraviolet rays. Note that step S14 may be executed when the atmosphere in the processing chambers 11 and 12 becomes a desired atmosphere, as in step S3.

FIG. 11 is a diagram showing an example of the configuration of the substrate processing device 10A. FIG. 11 schematically shows the state of the substrate processing apparatus 10A in step S14. Nitrogen is supplied to the processing chambers 11 and 12. Further, in FIG. 11, the fact that the ultraviolet irradiator 2 irradiates the treatment chambers 11 and 12 with ultraviolet rays is indicated by an arrow having a starting point on the ultraviolet irradiator 2. The ultraviolet irradiator 2 irradiates the main surface of the substrate W1 with ultraviolet rays in the processing chamber 11, and also irradiates the main surface of the substrate W2 with ultraviolet rays through the through holes 511 and 521 in the processing chamber 12.

According to this, since the main surfaces of the substrates W1 and W2 can be irradiated with ultraviolet rays, the electric charge stored in the substrates W1 and W2 can be removed by, for example, the photoelectric effect. The control unit 7 may rotate the substrate W2 on the substrate holding unit 32 during irradiation with ultraviolet rays.

A third embodiment.
FIG. 12 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10B. The substrate processing apparatus 10B has a substrate holding portion 33, and is different from the substrate processing apparatus 10 in this respect. The substrate holding portion 33 is arranged in, for example, the processing chamber 12, and can hold the substrate W2 so that the main surface of the substrate W2 faces the ultraviolet irradiator 2. Further, the substrate holding portion 33 holds the substrate W2 at a position different from that of the substrate held by the substrate holding portion 32. For example, the substrate holding portion 33 holds the substrate W2 at a position closer to the ultraviolet irradiator 2 than the substrate holding portion 32. As a more specific example, the substrate holding portion 33 holds the substrate W2 between the ultraviolet irradiator 2 and the light shielding portion 5. Although the specific configuration of the substrate holding portion 33 is not particularly limited, it may have, for example, the same configuration as the substrate holding portion 32 (for example, a recess formed on the inner surface of the chamber 1).

When the substrate W2 is placed on the substrate holding portion 33, the main surface of the substrate W2 can be irradiated with ultraviolet rays without passing through the light-shielding portion 5. According to this, ultraviolet rays can be irradiated to a wider range of the substrate W2. Therefore, the electric charge of the substrate W2 can be removed more effectively. Further, since the substrate W2 can be placed near the ultraviolet irradiator 2, the intensity of ultraviolet rays on the main surface of the substrate W2 can be improved. According to this, the electric charge of the substrate W2 can be removed more quickly.

Fourth embodiment.
FIG. 13 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10C. The substrate processing device 10C has a configuration in which the light-shielding portion 5 is omitted from the substrate processing device 10B. Since the substrate processing device 10C has the substrate holding portions 32 and 33, the substrate W2 can be selectively placed on one of the substrate holding portions 32 and 33.

By the way, when the main surface of the substrate W2 on which the low-dielectric film is formed is irradiated with ultraviolet rays, the low-dielectric film may be damaged as described above. This amount of damage (for example, the amount of increase in k value) increases as the intensity of ultraviolet rays increases.

The intensity of ultraviolet rays is lower as the distance from the ultraviolet irradiator 2 is longer. The substrate holding portion 32 is far from the ultraviolet irradiator 2, and the substrate holding portion 33 is close to the ultraviolet irradiator 2. Therefore, the intensity of the ultraviolet rays on the substrate W2 held by the substrate holding portion 32 is lower than the intensity of the ultraviolet rays on the substrate W2 held by the substrate holding portion 33. Therefore, when the substrate W2 is held by the substrate holding portion 32, damage to the low dielectric film can be reduced.

On the other hand, the higher the intensity of ultraviolet rays on the substrate W2, the shorter the charge can be removed. Therefore, the charge removal rate is higher when the substrate W2 is held by the substrate holding portion 33 than when the substrate W2 is held by the substrate holding portion 32.

Hereinafter, the relationship between the amount of damage to the low-dielectric film and the irradiation time, and the relationship between the removal of electric charges and the irradiation time will be considered. Here, the amount of damage to the low-dielectric film is evaluated by the change in the light absorption rate of the low-dielectric film. 14 and 15 schematically show an example of the relationship between the absorptance of the low-dielectric film and the wave number of light. Porous organic silicate (OSG2.4) is used as the low-dielectric film. The wave number corresponding to the Si-CH ₃ bond in this low dielectric film is 1274 [cm ^-1 ].

FIG. 14 shows the relationship when the intensity of ultraviolet rays on the main surface of the substrate is high, and FIG. 15 shows the relationship when the intensity of ultraviolet rays on the main surface of the substrate is low. For example, the intensity of ultraviolet rays on the main surface of the substrate is 19 [mm / cm ² ] in FIG. 14 and 2 [mm / cm ² ] in FIG. Here, the intensity of ultraviolet rays is adjusted by adjusting the distance between the substrate and the ultraviolet irradiator. For example, the distance is 3 [mm] in FIG. 14 and 17.6 [mm] in FIG. ].

In FIG. 14, the absorption rates before the ultraviolet irradiation are shown by curves R0, and the absorption rates after 10 seconds, 20 seconds, and 30 seconds after the ultraviolet irradiation are shown by curves R11 to R13, respectively. In FIG. 15, the absorption rates after 5 minutes, 7 minutes, and 10 minutes after the ultraviolet irradiation are shown by curves R21 to R23, respectively.

16 and 17 schematically show an example of the relationship between the potential (also referred to as surface charge) on the main surface of the substrate and the irradiation time. In FIG. 16, the unit of time indicated by the horizontal axis is seconds, and in FIG. 17, the unit of time indicated by the horizontal axis is minutes. FIG. 16 shows the above relationship when the intensity of ultraviolet rays on the main surface of the substrate is high, and FIG. 17 shows the above relationship when the intensity of ultraviolet rays on the main surface of the substrate is low. The value of the intensity of ultraviolet rays in FIG. 16 is the same as the value of the intensity of ultraviolet rays in FIG. 14, and the value of the intensity of ultraviolet rays in FIG. 17 is the same as the value of the intensity of ultraviolet rays in FIG.

By the way, since the low dielectric film is less likely to cause the photoelectric effect, removal of electric charges by ions may be used. For example, oxygen ions can be used. This oxygen ion can be generated by the absorption of ultraviolet rays by oxygen. By adopting the oxygen ion in the substrate, the electric charge of the substrate can be eliminated. Here, the oxygen concentration in the space between the substrate and the ultraviolet irradiator was set to 20.9 [%].

As shown in FIGS. 16 and 17, when the intensity of ultraviolet rays is high, the electric charge is rapidly removed by irradiation with ultraviolet rays. Therefore, it is desirable that the intensity of ultraviolet rays is high only from the viewpoint of removing electric charges. However, when the intensity of ultraviolet rays is high, as shown in FIG. 14, a change in the absorption rate at a wave number of 1274 [cm ^-1 ] appears 10 seconds after the start of irradiation with ultraviolet rays (curve R11). That is, 10 seconds after the start of irradiation with ultraviolet rays, the low-dielectric film is damaged. The surface charge at this time is smaller than -50 [V] in the example of FIG.

On the other hand, when the intensity of ultraviolet rays is low, as shown in FIG. 15, there is almost no change in the absorption rate at the wave number 1274 [cm ^-1 ] even after 5 minutes from the start of irradiation with ultraviolet rays (curve R21), and it changes after 7 minutes. Appears (curve R22). That is, within 5 minutes from the start of ultraviolet irradiation, almost no damage to the substrate occurred. Then, as shown in FIG. 17, the surface charge 5 minutes after the start of irradiation with ultraviolet rays is larger than -30 [V] and smaller than -20 [V]. That is, it can be seen that the charge can be removed as compared with the surface charge after 10 seconds shown in FIG.

As described above, it can be seen that by lowering the intensity of ultraviolet rays on the main surface of the substrate, the electric charge can be removed while suppressing the damage to the low dielectric film.

Therefore, the control unit 7 controls the indexer robot 121 or the transfer robot 123 so that the substrate W2 is passed to the substrate holding unit 32 when the low-dielectric film is formed on the main surface of the substrate W2. According to this, the electric charge can be effectively removed while suppressing the damage to the low dielectric film.

On the other hand, the control unit 7 controls the indexer robot 121 or the transfer robot 123 so that the substrate W2 is passed to the substrate holding unit 33 when the low dielectric film is not formed on the main surface of the substrate W2. According to this, the electric charge of the substrate W2 can be removed more quickly.

As described above, when the low dielectric film is formed on the substrate W2, the substrate W2 is held by the substrate holding portion 32, and when the low dielectric film is not formed on the substrate W2, the substrate W2 is held by the substrate holding portion. Held by 33. Information on whether or not a low-dielectric film is formed on the substrate W2 may be received from, for example, an external device.

Fifth embodiment.
FIG. 18 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10D. The substrate processing apparatus 10D differs from the substrate processing apparatus 10 in that it includes reflecting portions 91, 92 and moving mechanisms 93, 94.

The reflection unit 91 and the moving mechanism 93 are arranged in the processing chamber 11. The reflecting unit 91 has a reflecting surface, and reflects ultraviolet rays on the reflecting surface. The reflective surface of the reflective portion 91 may be formed of a member having a high reflectance for ultraviolet rays, and may be, for example, aluminum having a low surface roughness. For example, the reflective portion 91 is formed in a plate shape, for example, and one of the main surfaces functions as a reflective surface.

The moving mechanism 93 moves the reflecting unit 91 between the following two positions. The first position is a position where the reflection unit 91 faces the ultraviolet irradiator 2 (hereinafter, referred to as a first reflection position). At this first reflection position, the reflection surface of the reflection unit 91 faces the ultraviolet irradiator 2. In this state, the ultraviolet rays emitted from the ultraviolet irradiator 2 are reflected to the ultraviolet irradiator 2 by the reflecting unit 91. In other words, the first reflection position may be a position where the reflection unit 91 can reflect ultraviolet rays to the ultraviolet irradiator 2. The second position is a position where the reflecting portion 91 does not face the ultraviolet irradiator 2.

The reflection unit 92 and the moving mechanism 94 are arranged in the processing chamber 12. The reflecting unit 92 has a reflecting surface and reflects ultraviolet rays on the reflecting surface. The reflective surface of the reflective portion 92 may be formed of a member having a high reflectance for ultraviolet rays, and may be, for example, aluminum having a low surface roughness. For example, the reflective portion 92 is formed in a plate shape, for example, and one of the main surfaces functions as a reflective surface.

The moving mechanism 94 moves the reflecting unit 92 between the following two positions. The first position is a position where the reflecting portion 92 faces the ultraviolet irradiator 2 (hereinafter, referred to as a second reflecting position). At this second reflection position, the reflection surface of the reflection unit 92 faces the ultraviolet irradiator 2. In this state, the ultraviolet rays emitted from the ultraviolet irradiator 2 are reflected to the ultraviolet irradiator 2 by the reflecting unit 92. In other words, the second reflection position may be a position where the reflection unit 92 can reflect ultraviolet rays to the ultraviolet irradiator 2. The second position is a position where the reflecting portion 92 does not face the ultraviolet irradiator 2.

The reflecting surfaces of the reflecting portions 91 and 92 may have a width sufficient to face each other over the entire surface of the ultraviolet irradiator 2. According to this, ultraviolet rays can be reflected to the ultraviolet irradiator 2 in a wider range.

The ultraviolet irradiator 2 can pass ultraviolet rays incident from the outside. For example, inside a case made of quartz glass, a pair of electrodes are opposed to each other in a horizontal direction (for example, an X direction or a Y direction), and a discharge gas is filled between them. According to this, ultraviolet rays pass through the quartz glass in the Z direction. That is, the ultraviolet rays from the outside pass through the ultraviolet irradiator 2 in the Z direction.

The moving mechanism 93 is, for example, a uniaxial stage, and the reflecting portion 91 may be moved linearly, for example. Alternatively, the moving mechanism 93 may move the reflecting portion 91 in a horizontal plane on an arc. In this case, for example, the moving mechanism 93 has a rotating body that rotates about the Z direction as a rotation axis, and a connecting portion having one end connected to the rotating body and the other end connected to the reflecting portion 91. You may be. The connecting portion extends radially with respect to the rotating body. According to this, the reflecting portion 91 moves on the arc as the rotating body rotates. The same applies to the moving mechanism 94. The operation of the moving mechanisms 93 and 94 is controlled by the control unit 7.

When both the reflecting portions 91 and 92 do not face the ultraviolet irradiator 2, the ultraviolet irradiator 2 can irradiate the substrate W1 and the substrate W2 (or the light shielding portion 5) with ultraviolet rays.

When the reflecting unit 91 faces the ultraviolet irradiator 2 and the reflecting unit 92 does not face the ultraviolet irradiator 2, the ultraviolet rays radiated from the ultraviolet irradiator 2 to the processing chamber 11 are reflected by the reflecting unit 91. The reflected ultraviolet rays pass through the ultraviolet irradiator 2 and are irradiated to the processing chamber 12. As a result, the amount of ultraviolet rays irradiated to the processing chamber 12 can be improved. In this case, the processing chamber 11 does not process the substrate.

Similarly, when the reflecting unit 91 does not face the ultraviolet irradiator 2 and the reflecting unit 92 faces the ultraviolet irradiator 2, the ultraviolet rays emitted from the ultraviolet irradiator 2 to the processing chamber 12 are reflected by the reflecting unit 92. It passes through the ultraviolet irradiator 2 and irradiates the processing chamber 11. As a result, the amount of ultraviolet rays irradiated to the processing chamber 11 can be improved. In this case, the processing chamber 12 does not process the substrate.

As described above, when the substrate is processed in one of the processing chambers 11 and 12 and the substrate is not processed in the other, ultraviolet rays are required to irradiate the other processing chamber which does not require ultraviolet rays. It can be supplied to one of the processing chambers. According to this, ultraviolet rays can be effectively used.

Further, as described in the fourth embodiment, it is desirable to reduce the intensity of ultraviolet rays on the substrate on which the low dielectric film is formed. Therefore, the control unit 7 may control the moving mechanisms 93 and 94 depending on the presence or absence of the low dielectric film.

For example, when processing the substrate W1 on which the low dielectric film is not formed is performed in the processing chamber 11, the control unit 7 controls the moving mechanism 93 so that the reflecting unit 91 does not face the ultraviolet irradiator 2 and reflects the light. The moving mechanism 93 is controlled so that the unit 92 faces the ultraviolet irradiator 2. As a result, the intensity of ultraviolet rays on the main surface of the substrate W1 can be improved, so that the electric charge stored in the substrate W1 can be quickly removed.

On the other hand, when processing the substrate W1 on which the low-dielectric film is formed is performed in the processing chamber 11, the control unit 7 moves the moving mechanism 93 so that the reflecting units 91 and 92 do not face the ultraviolet irradiator 2. , 94 are controlled. According to this, since the intensity of ultraviolet rays on the main surface of the substrate W1 can be reduced, the electric charge stored in the substrate W1 can be effectively removed while reducing the damage to the low dielectric film. The same operation can be applied when processing is performed in the processing chamber 12.

In the first to fifth embodiments, charge removal treatment (static elimination treatment) and organic matter removal treatment are exemplified as treatments using ultraviolet rays in the treatment chambers 11 and 12. However, the treatment using ultraviolet rays is not limited to these. For example, a treatment for removing the water repellent remaining on the substrate may be adopted. For example, the surface of the substrate may be rinsed with pure water to remove the chemical solution on the substrate. When this pure water is dried, the pattern formed on the substrate may collapse due to surface tension. To prevent this, a water repellent may be supplied to the surface of the substrate. The water repellent remaining after the pure water is dried is removed by irradiation with ultraviolet rays. It is also removed by the action of ozone.

1 Chamber 2 Ultraviolet irradiation means (ultraviolet irradiator)
31 to 33 Board holding means (board holding part)
5 Shading means (shading part)
8 Transportation means (movement mechanism)
10 Substrate processing equipment 11, 12 Processing chambers 41, 42 Gas supply means (gas supply unit)
51, 52 Plate part 91, 92 Reflecting means (reflecting part)
93,94 Transportation means (movement mechanism)
100 Substrate processing system 110 Container holder 120 Substrate passage 121 Transport means (indexer robot)
123 Transport means (transport robot)
130 Substrate processing section 511,521 Through hole

Claims (12)

An ultraviolet irradiation means located at the boundary between the first treatment chamber and the second treatment chamber and capable of irradiating the first treatment chamber and the second treatment chamber with ultraviolet rays.
A first substrate holding means, which is arranged in the first processing chamber and holds the substrate so as to face the ultraviolet irradiation means.
A second substrate holding means , which is arranged in the second processing chamber and holds the substrate so as to face the ultraviolet irradiation means ,
The space between the ultraviolet irradiation means and the second substrate holding means is arranged so as to partition the space between the ultraviolet irradiation means side and the second space on the second substrate holding means side. A light-shielding means that allows the atmosphere in the first space and the atmosphere in the second space to communicate with each other while blocking ultraviolet rays from the ultraviolet irradiation means.
A first gas supply means for supplying gas to the first space,
With the first means of transportation
With
The light-shielding means has a first plate portion and a second plate portion having a light-shielding property against ultraviolet rays.
At least one first through hole is formed in the first plate portion.
At least one second through hole is formed in the second plate portion.
The first plate portion and the second plate portion are arranged so that the positions of the at least one first through hole and the positions of the at least one second through hole are displaced from each other in the direction parallel to the respective plate surfaces. They are placed facing each other with a gap from each other,
The first moving means includes a first position in which the at least one first through hole and the at least one second through hole are displaced from each other, and the at least one first through hole and the at least one second through hole. A substrate processing apparatus for relatively moving the first plate portion and the second plate portion with respect to a second position in which In the substrate processing apparatus according to claim 1 ,
The at least one first through hole includes a plurality of first through holes.
The at least one second through hole includes a plurality of second through holes.
A substrate processing apparatus in which the plurality of first through holes face one-to-one with the plurality of second through holes at the second position. In the substrate processing apparatus according to claim 1 or 2 .
A substrate processing apparatus further comprising a third substrate holding means for holding a substrate between the light-shielding means and the ultraviolet irradiation means so as to face the ultraviolet irradiation means. In the substrate processing apparatus according to any one of claims 1 to 3 .
A substrate processing apparatus further comprising a second gas supply means for supplying gas to the first processing chamber. An ultraviolet irradiation means located at the boundary between the first treatment chamber and the second treatment chamber and capable of irradiating the first treatment chamber and the second treatment chamber with ultraviolet rays.
A first substrate holding means, which is arranged in the first processing chamber and holds the substrate so as to face the ultraviolet irradiation means.
A second substrate holding means, which is arranged in the second processing chamber and holds the substrate so as to face the ultraviolet irradiation means,
At least one reflecting means, which is arranged in at least one of the first processing chamber and the second processing chamber and reflects the ultraviolet rays from the ultraviolet irradiation means to the other,
A second moving means for moving the at least one reflecting means between a position where the at least one reflecting means faces the ultraviolet irradiation means and a position where the at least one reflecting means does not face the ultraviolet irradiation means. A substrate processing device including. In the substrate processing apparatus according to claim 5 ,
A first gas supply means for supplying gas to the first processing chamber and
A substrate processing apparatus including a second gas supply means for supplying gas to the second processing chamber. In the substrate processing apparatus according to claim 4 or 6 .
A substrate processing apparatus in which at least one of the first gas supply means and the second gas supply means selectively supplies a plurality of types of gases. In the substrate processing apparatus according to any one of claims 1 to 7 .
A fourth substrate holding means for holding a substrate on which a low dielectric film is not formed is provided between the second substrate holding means and the ultraviolet irradiation means so as to face the ultraviolet irradiation means .
Substrate low dielectric is formed, the are transferred to the second substrate holding means, that are controlled to be held to face the ultraviolet light irradiation means, the substrate processing apparatus. In the substrate processing apparatus according to any one of claims 1 to 8 .
The first substrate holding means has a substrate having a first main surface on which a low-dielectric film is formed and a second main surface on which a low-dielectric film is not formed, and the second main surface is directed toward the ultraviolet irradiation means. A substrate processing device that holds in a posture. A container holder that holds the container that houses the board,
A substrate processing unit for performing processing using a processing liquid on a substrate,
A substrate passing portion through which a substrate reciprocating between the container holding portion and the substrate processing portion passes is provided.
A substrate processing system in which the substrate processing apparatus according to any one of claims 1 to 9 is provided in the substrate passing portion. The substrate processing system according to claim 10 .
A first transport means for delivering a substrate between each of the first substrate holding means and the second substrate holding means, and the container holding portion.
A substrate processing system including each of the first substrate holding means and the second substrate holding means, and a second conveying means for delivering a substrate between the substrate processing units. The substrate processing system according to claim 11 .
The first transport means passes the substrate from the container holding portion to one of the first substrate holding means and the second substrate holding means, and from the other of the first substrate holding means and the second substrate holding means. Pass the substrate to the container holder and
The second transport means passes a substrate from one of the first substrate holding means and the second substrate holding means to the substrate processing unit, and the substrate processing unit transfers the substrate to the first substrate holding means and the second substrate. A substrate processing system that passes a substrate to the other of the holding means.

Images