TW201841739A - Carrier sheet for electronic component and apparatus for thin film formation using the same - Google Patents

Carrier sheet for electronic component and apparatus for thin film formation using the same Download PDF

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TW201841739A
TW201841739A TW107113859A TW107113859A TW201841739A TW 201841739 A TW201841739 A TW 201841739A TW 107113859 A TW107113859 A TW 107113859A TW 107113859 A TW107113859 A TW 107113859A TW 201841739 A TW201841739 A TW 201841739A
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electronic component
layer
slide
film
deformation maintaining
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TW107113859A
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Chinese (zh)
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TWI720308B (en
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許眞
韓奎珉
李進善
鄭有燮
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南韓商Cni科技股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/552Protection against radiation, e.g. light or electromagnetic waves
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204Conductive materials
    • H01L23/5328Conductive materials containing conductive organic materials or pastes, e.g. conductive adhesives, inks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30Technical effects
    • H01L2924/301Electrical effects
    • H01L2924/3025Electromagnetic shielding

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Toxicology (AREA)
  • Laminated Bodies (AREA)

Abstract

The present disclosure relates to a carrier sheet for electronic component and an apparatus for thin film formation using the same, and more particularly, to a carrier sheet for electronic component and an apparatus for thin film formation using the same which are used for forming a thin film on a surface of an electronic component. In accordance with an exemplary embodiment, a carrier sheet for electronic component may include an adhesive sheet on one surface of which the electronic component is attached, and a deformation maintaining layer provided on the other surface opposed to the one surface of the adhesive layer, and plastically deformed by an attachment pressure of the electronic component.

Description

電子元件載片以及使用其以形成薄膜之裝置Electronic component carrier and device using the same to form a film

本發明是有關於一種用於電子元件的載片以及一種使用其以形成薄膜的裝置,且更具體而言,是有關於一種用於在電子元件的表面上形成薄膜的用於電子元件的載片以及使用其以形成薄膜的裝置。BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a slide for an electronic component and a device for forming the same, and more particularly to an electronic component for forming a film on a surface of an electronic component. A sheet and a device that uses it to form a film.

近來,隨著電磁波對人體的危害已廣泛為人所知,正在開發用於屏蔽自例如可攜式通訊裝置、影像顯示器件、遊戲機等各種電子產品產生的大量電磁波的技術。Recently, as electromagnetic waves have been widely known to the human body, technologies for shielding a large amount of electromagnetic waves generated from various electronic products such as portable communication devices, video display devices, and game machines are being developed.

一般而言,由於電磁波主要是自例如包含於電子器件及裝置中的半導體封裝等電子器件產生,因此近來正在開發用於屏蔽主要自例如半導體封裝等電子元件產生並輸出的電磁波的各種技術。In general, since electromagnetic waves are mainly generated from electronic devices such as semiconductor packages included in electronic devices and devices, various techniques for shielding electromagnetic waves generated and output mainly from electronic components such as semiconductor packages have recently been developed.

最簡單的方法是覆蓋安裝於基底上的電子元件的方法,但此種方法具有所述基底的體積因金屬頂蓋(metal cap)而顯著增大且製程及裝配元件的數目增大的侷限性。The simplest method is a method of covering electronic components mounted on a substrate, but such a method has the limitation that the volume of the substrate is significantly increased by the metal cap and the number of processes and assembly components is increased. .

近來,正在開發一種藉由直接在電子元件的表面上形成金屬膜來屏蔽電磁波的方法,且此種方法主要藉由濺鍍裝置(sputtering apparatus)來實作。然而,當使用濺鍍裝置在電子元件的表面上形成金屬膜且所述金屬膜沈積於例如半導體封裝的焊料球等電極部分上時,存在由於所述電極部分的濺鍍沈積污染而造成電性短接或類似故障的侷限性。因此,需要一種用於保護無需沈積有金屬膜的電極部分(例如半導體封裝的焊料球)的技術。Recently, a method of shielding electromagnetic waves by forming a metal film directly on the surface of an electronic component is being developed, and such a method is mainly implemented by a sputtering apparatus. However, when a metal film is formed on the surface of the electronic component using a sputtering apparatus and the metal film is deposited on an electrode portion such as a solder ball of a semiconductor package, there is electrical property due to contamination of the electrode portion by sputtering deposition. Limitations of shorting or similar failures. Therefore, there is a need for a technique for protecting an electrode portion (for example, a solder ball of a semiconductor package) in which a metal film is not deposited.

一般而言,金屬膜藉由將電子元件的一個表面(或下表面)附著至黏著片而形成於所述電子元件的表面上,且由於所述電子元件的僅一個表面可附著於典型黏著片上,因此除所述電子元件的所述一個表面以外,僅使用所述黏著片不能夠保護無需沈積的一部分。In general, a metal film is formed on a surface of the electronic component by attaching one surface (or lower surface) of the electronic component to the adhesive sheet, and since only one surface of the electronic component can be attached to a typical adhesive sheet Therefore, except for the one surface of the electronic component, the use of only the adhesive sheet cannot protect a portion that does not need to be deposited.

具體而言,當在例如半導體封裝的焊料球等電子元件的一個表面上形成有突出端子時,由於僅所述突出端子的端部部分可附著至典型黏著片,因此在所述典型黏著片與所述電子元件的所述一個表面之間出現間隙現象(gap phenomenon),且所述電子元件的所述突出端子無法得到保護,進一步需要一種用於保護無需沈積有金屬膜的電極部分(例如半導體封裝的焊料球)的技術。Specifically, when a protruding terminal is formed on one surface of an electronic component such as a solder ball of a semiconductor package, since only an end portion of the protruding terminal can be attached to a typical adhesive sheet, in the typical adhesive sheet A gap phenomenon occurs between the one surface of the electronic component, and the protruding terminal of the electronic component is not protected, and further, an electrode portion (for example, a semiconductor) for protecting a metal film from being deposited is further required The technology of packaged solder balls).

因此,近來使用如下一種方法:在所述方法中,在於撓性帶(flexible tape)中形成孔之後執行濺鍍,且橫跨所述孔設置底表面以使無需沈積有金屬膜的電極部分(例如半導體封裝的焊料球)插入所述孔中。Therefore, a method has recently been used in which sputtering is performed after a hole is formed in a flexible tape, and a bottom surface is provided across the hole so that an electrode portion on which a metal film is not deposited is not required ( For example, a solder ball of a semiconductor package is inserted into the hole.

然而,如此一來,當在撓性帶或材料安裝部件中形成有孔或凹槽、設置有例如半導體封裝等電子元件、且接著執行濺鍍時,由於應進一步提供在所述撓性帶或所述材料中形成所述孔或凹槽的製程,因此製造製程變得複雜。However, as such, when a hole or a groove is formed in the flexible tape or material mounting member, an electronic component such as a semiconductor package is provided, and then sputtering is performed, it is further provided in the flexible tape or The process of forming the holes or grooves in the material, and thus the manufacturing process becomes complicated.

另外,當在形成於撓性帶或材料中的孔或凹槽中設置例如半導體封裝等電子元件之後執行濺鍍時,由於在使所述電子元件緊密接觸或固定所述電子元件方面存在問題,因此可能存在間隙。因此,在例如半導體封裝的焊料球等電極上可能形成非期望金屬膜。In addition, when sputtering is performed after an electronic component such as a semiconductor package is formed in a hole or a groove formed in a flexible tape or material, there is a problem in bringing the electronic component into close contact or fixing the electronic component. Therefore there may be gaps. Therefore, an undesired metal film may be formed on an electrode such as a solder ball of a semiconductor package.

另外,存在以下侷限性:當電子元件的外部形狀或者例如焊料球等電極的間隔或形狀改變時,孔或凹槽的大小應由此改變;並且當在撓性帶或材料中形成有孔或凹槽時,電子元件的排列自由度為低的,且所述電子元件的孔之間的間隔受到約束,且因此所述電子元件不易於密集地設置。In addition, there is a limitation that when the outer shape of the electronic component or the interval or shape of the electrode such as a solder ball is changed, the size of the hole or the groove should be changed thereby; and when a hole or a hole is formed in the flexible tape or material In the case of the groove, the degree of freedom of arrangement of the electronic components is low, and the interval between the holes of the electronic component is restricted, and thus the electronic component is not easily disposed densely.

[現有技術文獻] [專利文獻] 韓國專利第10-1590593號[Prior Art Document] [Patent Document] Korean Patent No. 10-1590593

本發明提供一種用於電子元件的載片以及使用其以形成薄膜的裝置,所述載片被用於緊緊地固定所述電子元件及在所述電子元件的表面上形成薄膜。The present invention provides a slide for an electronic component and a device for forming the same using the slide for tightly fixing the electronic component and forming a film on the surface of the electronic component.

根據示例性實施例,一種用於電子元件的載片包括:黏著層,具有上面附著有電子元件的一個表面;以及變形維持層,設置於所述黏著層的與一個表面相對的另一表面上,且藉由所述電子元件的附著壓力而塑性變形。According to an exemplary embodiment, a carrier for an electronic component includes: an adhesive layer having one surface on which the electronic component is attached; and a deformation maintaining layer disposed on the other surface of the adhesive layer opposite to one surface And plastically deformed by the adhesion pressure of the electronic component.

所述黏著層可具有5微米(μm)至100微米的厚度。The adhesive layer may have a thickness of from 5 micrometers (μm) to 100 micrometers.

所述黏著層可具有近似200克力/英吋(gf/in)至1,500克力/英吋的黏著力。The adhesive layer can have an adhesion of approximately 200 gram force per gram (gf/in) to 1,500 gram force per inch.

所述變形維持層可由金屬膜形成。The deformation maintaining layer may be formed of a metal film.

所述變形維持層可具有近似3微米至60微米的厚度。The deformation maintaining layer may have a thickness of approximately 3 microns to 60 microns.

所述變形維持層可具有近似10%至80%的伸長率。The deformation maintaining layer may have an elongation of approximately 10% to 80%.

所述變形維持層可在室溫下具有近似200 W/m×K至450 W/m×K的熱傳導率。The deformation maintaining layer may have a thermal conductivity of approximately 200 W/m x K to 450 W/m x K at room temperature.

所述載片可更包括磁性層,所述磁性層設置於所述變形維持層的與面對所述黏著層的一個表面相對的另一表面上。The slide sheet may further include a magnetic layer disposed on the other surface of the deformation maintaining layer opposite to a surface facing the adhesive layer.

所述磁性層可以將磁性粉末分散於黏合劑樹脂中的方式形成。The magnetic layer may be formed in such a manner that the magnetic powder is dispersed in the binder resin.

以所述磁性層的總重量計,可以30重量%(wt%)至90重量%的量包含所述磁性粉末。The magnetic powder may be contained in an amount of 30% by weight (% by weight) to 90% by weight based on the total weight of the magnetic layer.

所述磁性粉末可具有0.1微米至30微米的平均粒徑。The magnetic powder may have an average particle diameter of 0.1 to 30 μm.

所述磁性層可具有10微米至500微米的厚度。The magnetic layer may have a thickness of from 10 micrometers to 500 micrometers.

所述載片可更包括基礎膜,所述基礎膜設置於所述變形維持層的與面對所述黏著層的一個表面相對的另一表面上且被配置成支撐所述變形維持層。The slide sheet may further include a base film disposed on the other surface of the deformation maintaining layer opposite to a surface facing the adhesive layer and configured to support the deformation maintaining layer.

所述基礎膜的恢復力可為使所述變形維持層能夠發生塑性變形的屈服值或低於所述屈服值。The restoring force of the base film may be a yield value at which the deformation maintaining layer can be plastically deformed or lower than the yield value.

所述黏著層及所述變形維持層中的至少一者可具有磁性性質。At least one of the adhesive layer and the deformation maintaining layer may have magnetic properties.

所述基礎膜可由合成樹脂材料形成且含有磁性粉末。The base film may be formed of a synthetic resin material and contain a magnetic powder.

所述載片可具有近似10%至80%的伸長率。The slide can have an elongation of approximately 10% to 80%.

所述載片可具有近似25牛/平方毫米(N/mm2 )至250牛/平方毫米的抗張強度。The slide may have a tensile strength of approximately 25 N/mm 2 (N/mm 2 ) to 250 N/mm 2 .

根據另一示例性實施例,一種用於形成薄膜的裝置包括:沈積材料提供部件,在沈積目標物件上提供用於形成薄膜的沈積材料,所述物件包括用於電子元件的載片,所述載片設置有磁性層;以及基座,被配置成支撐所述沈積目標物件,其中所述基座包括:磁體板,被配置成對所述載片提供拉力;以及冷卻單元,被配置成對所述載片進行冷卻。According to another exemplary embodiment, an apparatus for forming a film includes: a deposition material supply member that provides a deposition material for forming a thin film on a deposition target object, the article including a slide for an electronic component, The carrier is provided with a magnetic layer; and a susceptor configured to support the deposition target object, wherein the pedestal comprises: a magnet plate configured to provide a pulling force to the carrier; and a cooling unit configured to be The slide is cooled.

所述基座可更包括設置於所述磁體板與所述沈積目標物件之間的彈性層。The pedestal may further include an elastic layer disposed between the magnet plate and the deposition target object.

所述沈積目標物件可更包括附著於所述載片上的電子元件,且所述裝置可在所述電子元件的暴露表面上形成所述薄膜。The deposition target article may further include an electronic component attached to the slide, and the device may form the thin film on an exposed surface of the electronic component.

在下文中,將參照附圖更詳細地闡述示例性實施例。然而,本發明可實施為不同形式,而不應被視為僅限於本文所述的實施例。確切而言,提供該些實施例是為了使此揭露內容將透徹及完整,並將向熟習此項技術者充分傳達本發明的範圍。在說明中,相同的參考編號指代相同的配置,為使示例性實施例的說明清晰起見,可局部地誇大各圖,且相同的參考編號指代圖中的相同組件。Hereinafter, exemplary embodiments will be explained in more detail with reference to the accompanying drawings. However, the invention may be embodied in different forms and should not be construed as limited to the embodiments described herein. Rather, the embodiments are provided so that this disclosure will be thorough and complete, and the scope of the invention will be fully conveyed by those skilled in the art. In the description, the same reference numerals are used to refer to the same components, and the same reference numerals are used to refer to the same components in the drawings.

圖1是示出根據示例性實施例的用於電子元件的載片的剖視圖。FIG. 1 is a cross-sectional view illustrating a slide for an electronic component, according to an exemplary embodiment.

參照圖1,根據示例性實施例的用於電子元件的載片100可包括黏著層110,在黏著層110上附著有電子元件10;以及變形維持層120,設置於黏著層110的與一個表面相對的另一表面上且藉由電子元件10的附著壓力而塑性變形。Referring to FIG. 1, a slide 100 for an electronic component according to an exemplary embodiment may include an adhesive layer 110 to which an electronic component 10 is attached; and a deformation maintaining layer 120 disposed on one surface of the adhesive layer 110 The other surface is plastically deformed by the adhesion pressure of the electronic component 10.

載片100亦可被設置成矩形載片或圓形載片,亦可被形成為輥形狀,且可用於牢固地且緊緊地將電子元件10固定至載片100的一個表面(例如,上表面)上。此時,在載片100上可以閉合形式設置有至少一或多個半導體封裝。The slide 100 may also be provided as a rectangular slide or a circular slide, or may be formed in a roll shape, and may be used to securely and tightly fix the electronic component 10 to one surface of the slide 100 (for example, On the surface). At this time, at least one or more semiconductor packages may be disposed on the slide 100 in a closed form.

黏著層110(電子元件10可附著(或黏著)於黏著層110的一個表面上)可用於附著(或緊緊地固定)例如半導體封裝11及多層式陶瓷電容器(multilayer ceramic capacitor,MLCC)12等電子元件10直至進行例如濺鍍等薄膜形成製程且藉此防止電極部分的沈積污染,且用於黏著電子元件10以使電子元件10在所述製程之後自載片100輕易地剝離。此處,電子元件10可包括例如突出端子11a等突出部分,且半導體封裝11可包括:球柵陣列(ball grid array,BGA)封裝,其中在所述球柵陣列封裝的一個表面上以矩陣形式設置有多個焊料球;連接盤柵陣列(land grid array,LGA)封裝,其中以矩陣形式設置有多個連接盤形狀(land-shaped)的金屬電極。此時,黏著層110可被設置成面對電子元件10,且電子元件10可附著至黏著層110,電子元件10的表面作為附著表面而面對黏著層110。The adhesive layer 110 (the electronic component 10 can be attached (or adhered to) on one surface of the adhesive layer 110) can be used for attaching (or tightly fixing), for example, a semiconductor package 11 and a multilayer ceramic capacitor (MLCC) 12, etc. The electronic component 10 is subjected to a film forming process such as sputtering and thereby preventing deposition contamination of the electrode portion, and is used to adhere the electronic component 10 so that the electronic component 10 is easily peeled off from the carrier 100 after the process. Here, the electronic component 10 may include a protruding portion such as the protruding terminal 11a, and the semiconductor package 11 may include: a ball grid array (BGA) package in which a matrix is formed on one surface of the ball grid array package A plurality of solder balls are disposed; a land grid array (LGA) package is provided in which a plurality of land-shaped metal electrodes are disposed in a matrix form. At this time, the adhesive layer 110 may be disposed to face the electronic component 10, and the electronic component 10 may be attached to the adhesive layer 110, and the surface of the electronic component 10 faces the adhesive layer 110 as an adhesion surface.

另外,黏著層110可包含黏著材料且是藉由將黏著流體材料加工成膜形式來形成。舉例而言,黏著材料可包括但不限於矽酮系黏著材料,且可對構成黏著層110的黏著材料使用除矽酮系黏著材料以外的各種材料。Additionally, the adhesive layer 110 can comprise an adhesive material and is formed by processing the adhesive fluid material into a film form. For example, the adhesive material may include, but is not limited to, an anthrone-based adhesive material, and various materials other than the anthrone-based adhesive material may be used for the adhesive material constituting the adhesive layer 110.

另外,黏著層110可具有近似200克力/英吋至1,500克力/英吋的黏著力。當黏著層110的黏著力小於近似200克力/英吋時,電子元件10可能無法被牢固地黏著及固定,且電子元件10可能在載片100的移動期間相對於載片100移動或分離。相反,當黏著層110的黏著力大於近似200克力/英吋時,電子元件10被過於牢固地黏著,且因此所述電子元件不易於在薄膜形成製程之後自載片100分離,或者在電子元件10無法明顯地自黏著層110分離的同時,黏著層110的一部分(或異物)可能餘留於電子元件10的附著表面(例如,下表面)上。In addition, the adhesive layer 110 may have an adhesive force of approximately 200 gram force/inch to 1,500 gram force/inch. When the adhesive force of the adhesive layer 110 is less than approximately 200 gram force/inch, the electronic component 10 may not be firmly adhered and fixed, and the electronic component 10 may move or separate relative to the slide 100 during the movement of the slide 100. In contrast, when the adhesive force of the adhesive layer 110 is greater than approximately 200 gram force/inch, the electronic component 10 is excessively firmly adhered, and thus the electronic component is not easily separated from the carrier 100 after the film forming process, or in the electron While the component 10 cannot be clearly separated from the adhesive layer 110, a part (or foreign matter) of the adhesive layer 110 may remain on the attachment surface (for example, the lower surface) of the electronic component 10.

同時,黏著層110可具有5微米至100微米的厚度。當黏著層110的厚度小於5微米時,由於不易於在大的區域中確保厚度均勻性,因此可能造成例如電子元件10的附著缺陷及電子元件10的附著表面的局部污染缺陷等缺陷,且由於黏著層110的黏著劑或類似物的凝聚力,因此黏著層110的一部分可分離且可能餘留於電子元件10的附著表面上。另外,不僅黏著層110可能非常容易地被撕裂或斷裂且由此不易於操作(handle),而且電子元件10可能無法附著至斷裂部分。Meanwhile, the adhesive layer 110 may have a thickness of 5 micrometers to 100 micrometers. When the thickness of the adhesive layer 110 is less than 5 μm, since thickness uniformity is not easily ensured in a large area, defects such as adhesion defects of the electronic component 10 and local contamination defects of the adhesion surface of the electronic component 10 may be caused, and The cohesive force of the adhesive or the like of the adhesive layer 110, and thus a part of the adhesive layer 110 can be separated and may remain on the attachment surface of the electronic component 10. In addition, not only the adhesive layer 110 may be torn or broken very easily and thus is not easy to handle, and the electronic component 10 may not be attached to the broken portion.

相反,當黏著層110的厚度大於100微米時,即使當在將電子元件10附著至黏著層110的同時施加按壓力時,所述按壓力仍可能無法輕易地傳遞至變形維持層120。另外,當存在例如半導體封裝11的突出端子11a等多個突出部分時,在所述突出部分之間夾置有厚的黏著層100且由此堵塞變形維持層120的夾置空間。因此,變形維持層120可能變得難以根據電子元件10的形狀來改變形狀。In contrast, when the thickness of the adhesive layer 110 is more than 100 μm, even when a pressing force is applied while the electronic component 10 is attached to the adhesive layer 110, the pressing force may not be easily transmitted to the deformation maintaining layer 120. In addition, when there are a plurality of protruding portions such as the protruding terminals 11a of the semiconductor package 11, a thick adhesive layer 100 is interposed between the protruding portions and thereby the occlusion space of the deformation maintaining layer 120 is blocked. Therefore, the deformation maintaining layer 120 may become difficult to change the shape according to the shape of the electronic component 10.

變形維持層120可設置於黏著層110中的與上面附著有電子元件10的一個表面相對的另一表面上,可接合(或黏著)至黏著層110上,且藉由電子元件10的附著壓力而塑性變形。即,變形維持層120可具有使變形維持層120的形狀不在藉由附著電子元件10的壓力(或外力)而塑性變形之後恢復的特性,且可為防形狀恢復膜(shape restoration prevention film)。舉例而言,變形維持層120的形狀可在電子元件10附著至黏著層110的同時藉由施加至黏著層110的壓力來改變,且在所述形狀改變且塑性變形之後,所述形狀可不恢復至原始形狀。此時,電子元件10的下陷至載片100中的一部分(例如,半導體封裝的突出端子)可被保持在變形維持層120內且固定至變形維持層120。因此,可防止在黏著層110與電子元件10的附著表面之間出現間隙現象。另外,可解決由於間隙現象而可能在電子元件10的電極部分中出現沈積污染、且因此電子元件10的質量可能降級且電子元件10的良率(yield)可能變低的侷限性。The deformation maintaining layer 120 may be disposed on the other surface of the adhesive layer 110 opposite to a surface on which the electronic component 10 is attached, may be bonded (or adhered) to the adhesive layer 110, and is adhered by the electronic component 10. And plastic deformation. That is, the deformation maintaining layer 120 may have a property that the shape of the deformation maintaining layer 120 is not restored after being plastically deformed by the pressure (or external force) to which the electronic component 10 is attached, and may be a shape restoration prevention film. For example, the shape of the deformation maintaining layer 120 may be changed by the pressure applied to the adhesive layer 110 while the electronic component 10 is attached to the adhesive layer 110, and the shape may not be restored after the shape is changed and plastically deformed. To the original shape. At this time, a portion of the electronic component 10 that is depressed to the carrier sheet 100 (for example, a protruding terminal of the semiconductor package) may be held in the deformation maintaining layer 120 and fixed to the deformation maintaining layer 120. Therefore, a gap phenomenon between the adhesive layer 110 and the attachment surface of the electronic component 10 can be prevented. In addition, the limitation that deposition contamination may occur in the electrode portion of the electronic component 10 due to the gap phenomenon, and thus the quality of the electronic component 10 may be degraded and the yield of the electronic component 10 may become low may be solved.

此時,為在使變形維持層120的形狀不在變形之後恢復的同時改善操作性質,變形維持層120的材料可為重要的,且變形維持層120可由金屬膜構成(或形成)。此時,金屬膜可包括具有小的厚度的金屬片或金屬箔且由具有展性(malleability)及延性(ductility)的金屬材料形成。此處,展性及延性包括作為藉由接收壓力來擴寬的性質的展性及作為藉由抗張力來延伸的性質的延性的含義,且可意指塑膠加工的容易度的性質(即,塑性(plasticity))。舉例而言,金屬膜可使用例如鋁、鋁合金、銅、及銅合金等富有延性及極佳加工性且藉此被輕易地加工成非常小的厚度的材料來形成。At this time, in order to improve the operational property while restoring the shape of the deformation maintaining layer 120 after the deformation is not deformed, the material of the deformation maintaining layer 120 may be important, and the deformation maintaining layer 120 may be composed (or formed) of the metal film. At this time, the metal film may include a metal piece or a metal foil having a small thickness and is formed of a metal material having malleability and ductility. Here, the malleability and ductility include the malleability as a property of widening by receiving pressure and the ductility as a property extended by the tensile resistance, and may mean the ease of plastic processing (ie, plasticity). (plasticity)). For example, the metal film can be formed using a material such as aluminum, aluminum alloy, copper, and copper alloy which is ductile and excellent in processability and thereby easily processed into a very small thickness.

另外,為在使所述形狀不在變形維持層120的形狀已變形之後恢復的同時改善操作性質,變形維持層120的厚度可為重要的。舉例而言,變形維持層120可由具有小的厚度的金屬片、金屬膜、或金屬箔的形狀形成。此時,變形維持層120可具有近似3微米至60微米的厚度。當變形維持層120的厚度小於3微米時,變形維持層120可能被非常輕易地撕裂或斷裂且由此非常難以操作。另外,使變形維持層120可塑性變形的屈服值(yield value)降低,且因此,塑性變形而成的形狀可能無法沿電子元件10的下陷部分(例如,半導體封裝的突出端子)得到輕易地維持。相反,當變形維持層120的厚度大於60微米時,即使當在將電子元件10附著至黏著層110的同時施加壓力,變形維持層120的形狀仍可能無法沿電子元件10的下陷部分有效地變形。舉例而言,當由鋁形成時,變形維持層120可被形成為5微米至15微米(近似9微米)的厚度,且視材料(材料的類型)而定,變形維持層120的厚度可改變。In addition, in order to improve the operational properties while the shape is not restored after the shape of the deformation maintaining layer 120 has been deformed, the thickness of the deformation maintaining layer 120 may be important. For example, the deformation maintaining layer 120 may be formed of a shape of a metal piece, a metal film, or a metal foil having a small thickness. At this time, the deformation maintaining layer 120 may have a thickness of approximately 3 to 60 μm. When the thickness of the deformation maintaining layer 120 is less than 3 μm, the deformation maintaining layer 120 may be torn or broken very easily and thus is very difficult to handle. In addition, the yield value of the plastic deformation of the deformation maintaining layer 120 is lowered, and therefore, the plastically deformed shape may not be easily maintained along the depressed portion of the electronic component 10 (for example, the protruding terminal of the semiconductor package). In contrast, when the thickness of the deformation maintaining layer 120 is more than 60 μm, even when pressure is applied while the electronic component 10 is attached to the adhesive layer 110, the shape of the deformation maintaining layer 120 may not be effectively deformed along the depressed portion of the electronic component 10. . For example, when formed of aluminum, the deformation maintaining layer 120 may be formed to a thickness of 5 micrometers to 15 micrometers (approximately 9 micrometers), and depending on the material (type of material), the thickness of the deformation maintaining layer 120 may be changed. .

另外,變形維持層120可具有近似10%至80%的伸長率(elongation)。當變形維持層120的伸長率小於近似10%時,由於藉由在將電子元件10附著至黏著層110的同時施加的壓力無法輕易地延伸或者大的壓力對於塑性變形而言可為必要的,因此變形維持層120可能無法塑性變形,且即使塑性變形,變形維持層120仍可能無法沿電子元件10的下陷部分的形狀精確地變形。相反,當變形維持層120的伸長率大於80%時,變形維持層120過於輕易地延伸且因此,變得難以操作變形維持層120來進行塑性變形以使黏著層110緊密接觸電子元件10的附著表面。因此,不僅難以創造(或維持)加壓條件以將變形維持層120的形狀改變成其中黏著層110可緊密接觸電子元件10的附著表面的形狀,而且當黏著層110未被完全均勻地加壓時,黏著層110可能由於每一區的壓力差異而無法均勻地附著至電子元件10的附著表面且在黏著層110與電子元件10的附著表面之間可能出現間隙(或間隙現象)。因此,大量生產的穩定性可能降低。In addition, the deformation maintaining layer 120 may have an elongation of approximately 10% to 80%. When the elongation of the deformation maintaining layer 120 is less than approximately 10%, since the pressure applied while attaching the electronic component 10 to the adhesive layer 110 cannot be easily extended or a large pressure may be necessary for plastic deformation, Therefore, the deformation maintaining layer 120 may not be plastically deformed, and even if it is plastically deformed, the deformation maintaining layer 120 may not be accurately deformed along the shape of the depressed portion of the electronic component 10. In contrast, when the elongation of the deformation maintaining layer 120 is more than 80%, the deformation maintaining layer 120 is excessively extended and thus it becomes difficult to operate the deformation maintaining layer 120 to be plastically deformed so that the adhesive layer 110 closely contacts the attachment of the electronic component 10. surface. Therefore, it is not only difficult to create (or maintain) pressurization conditions to change the shape of the deformation maintaining layer 120 to a shape in which the adhesive layer 110 can closely contact the attachment surface of the electronic component 10, and when the adhesive layer 110 is not completely uniformly pressurized At this time, the adhesive layer 110 may not be uniformly attached to the attachment surface of the electronic component 10 due to the pressure difference of each zone and a gap (or a gap phenomenon) may occur between the adhesive layer 110 and the attachment surface of the electronic component 10. Therefore, the stability of mass production may be lowered.

圖2是闡述根據實施例的將電子元件附著至用於電子元件的載片的製程的概念圖,圖2的(a)是其中在所述載片上附著半導體封裝的圖,圖2的(b)是其中藉由所述半導體封裝的附著壓力來使所述載片的變形維持層塑性變形的圖,圖2的(c)是其中在所述載片上附著多層式陶瓷電容器(MLCC)的圖,且圖2的(d)是其中藉由多層式陶瓷電容器(MLCC)的附著壓力來使所述載片的變形維持層塑性變形的圖。2 is a conceptual diagram illustrating a process of attaching an electronic component to a carrier for an electronic component according to an embodiment, and FIG. 2(a) is a diagram in which a semiconductor package is attached to the carrier, (b of FIG. 2) Is a diagram in which the deformation maintaining layer of the carrier is plastically deformed by the adhesion pressure of the semiconductor package, and (c) of FIG. 2 is a diagram in which a multilayer ceramic capacitor (MLCC) is attached to the carrier. (d) of FIG. 2 is a view in which the deformation maintaining layer of the slide sheet is plastically deformed by the adhesion pressure of the multilayer ceramic capacitor (MLCC).

參照圖2,可根據電子元件10的形狀來使變形維持層120塑性變形,且可根據電子元件10的下陷至載片100或變形維持層120中的下陷部分的形狀來使變形維持層120塑性變形。Referring to FIG. 2, the deformation maintaining layer 120 may be plastically deformed according to the shape of the electronic component 10, and the deformation maintaining layer 120 may be plasticized according to the shape of the depressed portion of the electronic component 10 to the carrier sheet 100 or the deformation maintaining layer 120. Deformation.

此時,例如半導體封裝11等電子元件10可以在電子元件10的一部分被插入(或下陷)的同時面對黏著層110的狀態(例如,在所述半導體封裝的情形中,在其中突出端子面對所述黏著層的狀態中)接觸黏著層110。另外,在朝向黏著層110的方向上按壓電子元件10,且因此,黏著層110及變形維持層120可被電子元件10的附著表面或接觸表面(例如,半導體封裝的突出端子)按壓。可藉由按壓電子元件10來使黏著層110及變形維持層120的形狀變形,且因此,電子元件10的至少一部分(例如,突出端子)可下陷至黏著層110中且免於暴露至外部。另外,在變形維持層120的形狀已塑性變形之後,變形維持層120的形狀可不恢復。此處,當在朝向黏著層110的方向上按壓電子元件10時,例如軟輥等推進器(pusher)亦可直接地接觸及按壓電子元件10且可間接地對電子元件10及/或載片100施加壓力。At this time, the electronic component 10 such as the semiconductor package 11 may face the state of the adhesive layer 110 while a part of the electronic component 10 is inserted (or depressed) (for example, in the case of the semiconductor package, the terminal face is protruded therein) In the state of the adhesive layer, the adhesive layer 110 is contacted. In addition, the electronic component 10 is pressed in a direction toward the adhesive layer 110, and thus, the adhesive layer 110 and the deformation maintaining layer 120 may be pressed by an attachment surface or a contact surface of the electronic component 10 (for example, a protruding terminal of the semiconductor package). The shape of the adhesive layer 110 and the deformation maintaining layer 120 can be deformed by pressing the electronic component 10, and thus, at least a portion (for example, a protruding terminal) of the electronic component 10 can be depressed into the adhesive layer 110 and from being exposed to the outside. In addition, after the shape of the deformation maintaining layer 120 has been plastically deformed, the shape of the deformation maintaining layer 120 may not be restored. Here, when the electronic component 10 is pressed in the direction toward the adhesive layer 110, a pusher such as a soft roller may directly contact and press the electronic component 10 and may indirectly contact the electronic component 10 and/or the slide. 100 applies pressure.

舉例而言,當電子元件10是在一個表面上(即,附著表面上)包括至少一個突出端子11a的半導體封裝11時,可沿例如焊料球或電極等突出端子11a來使電子元件10塑性變形,電子元件10在所述一個表面上附著至黏著層110。For example, when the electronic component 10 is the semiconductor package 11 including at least one protruding terminal 11a on one surface (ie, on the adhesion surface), the electronic component 10 can be plastically deformed along the protruding terminal 11a such as a solder ball or an electrode. The electronic component 10 is attached to the adhesive layer 110 on the one surface.

另外,當電子元件10為多層式陶瓷電容器12時,如圖2的(c)中所示,多層式陶瓷電容器12的至少一部分下陷至載片100中,且因此,黏著層110可不僅附著至多層式陶瓷電容器12的下表面,而且附著至多層式陶瓷電容器12的側表面的至少一部分。另外,如圖2的(d)中所示,可沿多層式陶瓷電容器12的下表面及側表面的下陷至載片100中的至少一部分的形狀來使變形維持層120塑性變形。In addition, when the electronic component 10 is the multilayer ceramic capacitor 12, as shown in (c) of FIG. 2, at least a portion of the multilayer ceramic capacitor 12 is depressed into the carrier sheet 100, and thus, the adhesive layer 110 may be attached not only to The lower surface of the multilayer ceramic capacitor 12 is attached to at least a portion of the side surface of the multilayer ceramic capacitor 12. Further, as shown in (d) of FIG. 2, the deformation maintaining layer 120 may be plastically deformed along the shape of at least a portion of the lower surface and the side surface of the multilayer ceramic capacitor 12 that is depressed to the carrier sheet 100.

此處,黏著層110或變形維持層120可具有較電子元件10的下陷部分的高度小的厚度。舉例而言,黏著層110或變形維持層120可具有較電子元件10下陷的預定深度小的厚度,且當突出端子11a下陷至載片100中時,黏著層110或變形維持層120可具有較突出端子11a的高度小的厚度。Here, the adhesive layer 110 or the deformation maintaining layer 120 may have a thickness smaller than the height of the depressed portion of the electronic component 10. For example, the adhesive layer 110 or the deformation maintaining layer 120 may have a thickness smaller than a predetermined depth at which the electronic component 10 is depressed, and when the protruding terminal 11a is depressed into the carrier 100, the adhesive layer 110 or the deformation maintaining layer 120 may have a smaller thickness. The thickness of the terminal 11a is protruded to a small thickness.

當黏著層110或變形維持層120具有等於或大於電子元件10的下陷部分的高度的厚度時,電子元件10的附著壓力不易於傳遞至變形維持層120且因此,變形維持層120無法接收等於或大於使變形維持層120可塑性變形的屈服值且由此,由於在電子元件10的邊緣部分或類似部分處具有較大的厚度而可能無法塑性變形或可能無法靈活彎曲。因此,變形維持層120可能無法沿電子元件10的下陷部分的形狀而精確地變形。具體而言,當在電子元件10的附著表面上密集地存在有例如半導體封裝11的突出端子11a等多個突出部分時,在突出部件之間夾置有厚的黏著層110且由此堵塞變形維持層120的夾置空間,或者由於變形維持層120的大的厚度而使得無法夾置黏著層110。因此,變形維持層120的形狀可能無法根據電子元件10的下陷部分的形狀來輕易地改變。When the adhesive layer 110 or the deformation maintaining layer 120 has a thickness equal to or larger than the height of the depressed portion of the electronic component 10, the adhesion pressure of the electronic component 10 is not easily transmitted to the deformation maintaining layer 120 and thus, the deformation maintaining layer 120 cannot receive equal or The yield value larger than the plastic deformation of the deformation maintaining layer 120 and thus, may not be plastically deformed or may not be flexibly bendable due to a large thickness at the edge portion or the like of the electronic component 10. Therefore, the deformation maintaining layer 120 may not be accurately deformed along the shape of the depressed portion of the electronic component 10. Specifically, when a plurality of protruding portions such as the protruding terminals 11a of the semiconductor package 11 are densely present on the attachment surface of the electronic component 10, a thick adhesive layer 110 is interposed between the protruding members and is thereby blocked and deformed. The adhesion space of the layer 120 is maintained, or the adhesion layer 110 cannot be sandwiched due to the large thickness of the deformation maintaining layer 120. Therefore, the shape of the deformation maintaining layer 120 may not be easily changed according to the shape of the depressed portion of the electronic component 10.

圖3是闡述根據示例性實施例的在電子元件的表面上進行的薄膜形成過程的概念圖,圖3的(a)是其中在半導體封裝的表面上形成薄膜的圖,圖3的(b)是其中自用於電子元件的載片剝離上面形成有薄膜的半導體封裝的圖,圖3的(c)是其中在多層式陶瓷電容器(MLCC)的表面上形成薄膜的圖,且圖3的(d)是其中自用於電子元件的載片剝離上面形成有薄膜的多層式陶瓷電容器(MLCC)的圖。3 is a conceptual diagram illustrating a film formation process performed on a surface of an electronic component according to an exemplary embodiment, and (a) of FIG. 3 is a diagram in which a film is formed on a surface of the semiconductor package, (b) of FIG. Is a diagram in which a semiconductor package on which a thin film is formed is peeled off from a carrier for an electronic component, and (c) of FIG. 3 is a diagram in which a thin film is formed on a surface of a multilayer ceramic capacitor (MLCC), and (d) of FIG. ) is a view in which a multilayer ceramic capacitor (MLCC) having a thin film formed thereon is peeled off from a carrier for an electronic component.

參照圖3,可在將電子元件10黏著(或緊緊地固定)至用於電子元件的載片100的同時執行例如濺鍍等薄膜形成製程。因此,可在電子元件10的表面中未黏著至載片100的暴露表面上形成薄膜(例如,用於屏蔽電磁波的金屬膜或電磁波屏蔽膜),且可不在黏著至載片100且未暴露的表面上形成薄膜20。舉例而言,當電子元件10為半導體封裝11時,可在暴露的半導體封裝11的側表面及上表面上形成金屬膜,且可能由於半導體封裝11的上面形成有例如焊料球或電極等突出端子的下表面被載片100密封而不形成所述金屬膜。因此,電子元件10的表面中的上面不需要形成薄膜的一部分被密封,且因此,若有必要,則可僅在上面需要形成薄膜的一部分上選擇性地形成所述薄膜。Referring to FIG. 3, a thin film forming process such as sputtering can be performed while the electronic component 10 is adhered (or tightly fixed) to the slide 100 for an electronic component. Therefore, a film (for example, a metal film or an electromagnetic wave shielding film for shielding electromagnetic waves) may be formed on the exposed surface of the surface of the electronic component 10 that is not adhered to the carrier 100, and may not be adhered to the carrier 100 and is not exposed. A film 20 is formed on the surface. For example, when the electronic component 10 is the semiconductor package 11, a metal film may be formed on the side surface and the upper surface of the exposed semiconductor package 11, and a protruding terminal such as a solder ball or an electrode may be formed on the upper surface of the semiconductor package 11 The lower surface is sealed by the slide 100 without forming the metal film. Therefore, a portion of the surface of the electronic component 10 on which the film is not required to be formed is sealed, and therefore, if necessary, the film can be selectively formed only on a portion on which the film needs to be formed.

舉例而言,電子元件10可黏著(或安裝)於載片100上,且在將上面已設置有電子元件10的載片100傳送至隨後欲闡述的用於形成薄膜的裝置200之後,可對裝置200中的電子元件10的表面執行薄膜形成製程。此時,在裝置200中執行濺鍍製程,且因此,可在暴露表面(例如,半導體封裝的側表面及上表面)上形成用於屏蔽電磁波的金屬膜。當在電子元件10的暴露表面上形成薄膜20時,拾取器(picker)30可將設置於載片100上的電子元件10拾取並傳送至後續製程。For example, the electronic component 10 can be adhered (or mounted) to the carrier 100, and after the carrier 100 on which the electronic component 10 has been disposed is transferred to the device 200 for forming a film to be described later, The surface of the electronic component 10 in the device 200 performs a film forming process. At this time, the sputtering process is performed in the device 200, and thus, a metal film for shielding electromagnetic waves can be formed on the exposed surface (for example, the side surface and the upper surface of the semiconductor package). When the film 20 is formed on the exposed surface of the electronic component 10, the picker 30 can pick up and transport the electronic component 10 disposed on the carrier 100 to a subsequent process.

此處,當藉由將載片100投入裝置200中來執行薄膜形成製程時,電子元件10被暴露至高溫氣氛(high-temperature atmosphere)。因此,由於例如設置於半導體封裝11中的半導體晶片等電子元件10可能由於高溫熱量而受到損壞,因此對電子元件10進行快速冷卻是不可或缺的。Here, when the film forming process is performed by putting the slide 100 into the apparatus 200, the electronic component 10 is exposed to a high-temperature atmosphere. Therefore, since the electronic component 10 such as a semiconductor wafer provided in the semiconductor package 11 may be damaged due to high-temperature heat, rapid cooling of the electronic component 10 is indispensable.

變形維持層120可在室溫下具有近似200 W/m·K或高於200 W/m·K的熱傳導率。即,變形維持層120可具有極佳熱傳導率。在例如濺鍍等薄膜形成製程中,可能產生高溫熱量,且載片100的散熱特性是重要的,如此電子元件10才能免於由於所述高溫熱量而受到損壞及斷裂。因此,載片100亦可用於在薄膜形成製程期間將被提供至電子元件10的熱量快速傳送至外部並將被提供至電子元件10的熱量快速散發。The deformation maintaining layer 120 may have a thermal conductivity of approximately 200 W/m·K or higher than 200 W/m·K at room temperature. That is, the deformation maintaining layer 120 can have excellent thermal conductivity. In a film forming process such as sputtering, high-temperature heat may be generated, and heat dissipation characteristics of the carrier 100 are important, so that the electronic component 10 is protected from damage and breakage due to the high-temperature heat. Therefore, the slide 100 can also be used to quickly transfer heat supplied to the electronic component 10 to the outside during the film forming process and to quickly dissipate heat supplied to the electronic component 10.

舉例而言,變形維持層120可由具有高熱傳導率的金屬材料形成,且吸收自電子元件10傳送(或產生)的熱量並將所述熱量傳送至裝置200的基座220。此時,當變形維持層120由鋁材料或銅材料形成時,被提供至電子元件10的熱量可被快速散發至外部。因此,在例如濺鍍等薄膜形成製程期間被暴露至高溫氣氛的電子元件10可被快速冷卻。因此,可防止例如設置於半導體封裝11中的半導體晶片等電子元件10由於高溫熱量而受到損壞,且可防止電子元件10的變形(例如半導體封裝11的彎曲)。For example, the deformation maintaining layer 120 may be formed of a metal material having high thermal conductivity, and absorbs heat transferred (or generated) from the electronic component 10 and transfers the heat to the susceptor 220 of the device 200. At this time, when the deformation maintaining layer 120 is formed of an aluminum material or a copper material, heat supplied to the electronic component 10 can be quickly dissipated to the outside. Therefore, the electronic component 10 exposed to a high temperature atmosphere during a thin film forming process such as sputtering can be rapidly cooled. Therefore, it is possible to prevent the electronic component 10 such as a semiconductor wafer provided in the semiconductor package 11 from being damaged due to high-temperature heat, and deformation of the electronic component 10 (for example, bending of the semiconductor package 11) can be prevented.

此時,當變形維持層120的熱傳導率在室溫下小於近似200 W/m·K,則在吸收自電子元件10傳送的熱量之後可被傳送至裝置200的基座的熱量的量有限。因此,在例如濺鍍等薄膜形成製程期間被暴露至高溫氣氛的電子元件10可能無法被快速冷卻且可能由於高溫熱量而受到損壞。變形維持層120的熱傳導率越高越好。然而,由於變形維持層120因具有其他特性而存在材料限制,因此熱傳導率的上限可為在室溫下為450 W/m·K。優選地,變形維持層120可在室溫下具有近似200 W/m·K至450 W/m·K的熱傳導率。At this time, when the thermal conductivity of the deformation maintaining layer 120 is less than approximately 200 W/m·K at room temperature, the amount of heat that can be transferred to the susceptor of the device 200 after absorbing heat transferred from the electronic component 10 is limited. Therefore, the electronic component 10 exposed to a high temperature atmosphere during a thin film forming process such as sputtering may not be rapidly cooled and may be damaged due to high temperature heat. The higher the thermal conductivity of the deformation maintaining layer 120, the better. However, since the deformation maintaining layer 120 has material limitations due to other characteristics, the upper limit of the thermal conductivity may be 450 W/m·K at room temperature. Preferably, the deformation maintaining layer 120 may have a thermal conductivity of approximately 200 W/m·K to 450 W/m·K at room temperature.

因此,可防止在黏著層110與電子元件10的附著表面之間的變形維持層120中出現間隙現象,且變形維持層120具有高的熱傳導率且藉此使得自電子元件10傳送的熱量能夠藉由黏著層110而有效地傳送至基座220,且可在電子元件10的所述表面上形成具有極佳膜質量的薄膜。Therefore, a gap phenomenon can be prevented from occurring in the deformation maintaining layer 120 between the adhesive layer 110 and the attachment surface of the electronic component 10, and the deformation maintaining layer 120 has high thermal conductivity and thereby enables heat transferred from the electronic component 10 to be borrowed The susceptor 220 is efficiently transferred to the susceptor 220, and a film having an excellent film quality can be formed on the surface of the electronic component 10.

然而,當載片100不緊密接觸基座220時,被提供至載片100的熱量可能無法被輕易地散發。However, when the slide 100 does not closely contact the susceptor 220, the heat supplied to the slide 100 may not be easily dissipated.

因此,黏著層110及變形維持層120中的至少一者可具有磁性性質。此時,為使電元件載片100緊密接觸基座220,基座220可包括磁體板221,且在磁體板221內或在磁體板221的後表面上裝設(或設置)冷卻單元222且可藉此對磁體板221及/或電元件載片100進行冷卻。為利用自磁性板221產生的磁力在電元件載片100中產生(或提供)拉力且藉此使電元件載片100緊密接觸基座220,黏著層110及變形維持層120中的至少任一者可具有磁性性質。Therefore, at least one of the adhesive layer 110 and the deformation maintaining layer 120 may have magnetic properties. At this time, in order to make the electric component carrier 100 in close contact with the susceptor 220, the susceptor 220 may include the magnet plate 221, and the cooling unit 222 is installed (or disposed) in the magnet plate 221 or on the rear surface of the magnet plate 221 and The magnet plate 221 and/or the electrical component carrier 100 can thereby be cooled. To generate (or provide) a pulling force in the electrical component carrier 100 by utilizing the magnetic force generated from the magnetic plate 221 and thereby bringing the electrical component carrier 100 into close contact with the susceptor 220, at least one of the adhesive layer 110 and the deformation maintaining layer 120 It can have magnetic properties.

舉例而言,黏著層110可含有磁性粉末132。藉由向由非磁性材料形成的黏著層110中添加例如粉末形狀的磁性金屬粉末等磁性粉末132,黏著層110可不僅具有可調整的厚度,而且在維持黏著層110的黏著性的同時具有與磁性薄膜相似的特性。亦即,藉由向黏著層110中添加磁性粉末132,載片100可藉由自磁性板221產生的磁力而緊密接觸基座220。因此,被傳送至電子元件10的熱量可藉由載片100而提供至磁性板221及/或冷卻單元222且可藉此對電子元件10進行快速冷卻。此處,當磁性粉末132被添加至黏著層110時,可將含有磁性粉末132的黏著層110形成為具有近似50微米的厚度以執行與磁性金屬膜相似的功能。然而,含有磁性粉末132的黏著層110的厚度並非僅限於此,且可根據所述磁性粉末的大小、平均粒徑、密度、及類似參數而被調整成近似50微米或大於50微米的厚度或者近似50微米或小於50微米的厚度。同時,當變形維持層120是由因富有延性及可加工性而被加工成非常小的厚度的非磁性金屬膜形成時,變形維持層120可由可使磁場通過的非磁性金屬材料形成。For example, the adhesive layer 110 may contain magnetic powder 132. By adding a magnetic powder 132 such as a powder-shaped magnetic metal powder to the adhesive layer 110 formed of a non-magnetic material, the adhesive layer 110 can have not only an adjustable thickness but also maintain the adhesiveness of the adhesive layer 110. Similar properties of magnetic films. That is, by adding the magnetic powder 132 to the adhesive layer 110, the slide 100 can closely contact the susceptor 220 by the magnetic force generated from the magnetic plate 221. Therefore, heat transferred to the electronic component 10 can be supplied to the magnetic plate 221 and/or the cooling unit 222 by the slide 100 and the electronic component 10 can be quickly cooled. Here, when the magnetic powder 132 is added to the adhesive layer 110, the adhesive layer 110 containing the magnetic powder 132 may be formed to have a thickness of approximately 50 μm to perform a function similar to that of the magnetic metal film. However, the thickness of the adhesive layer 110 containing the magnetic powder 132 is not limited thereto, and may be adjusted to a thickness of approximately 50 μm or more according to the size, average particle diameter, density, and the like of the magnetic powder or A thickness of approximately 50 microns or less than 50 microns. Meanwhile, when the deformation maintaining layer 120 is formed of a non-magnetic metal film which is processed into a very small thickness due to ductility and workability, the deformation maintaining layer 120 may be formed of a non-magnetic metal material through which a magnetic field can pass.

另外,變形維持層120可由磁性金屬膜形成。此外,在此種情形中,載片100可藉由自磁性板221產生的磁力而緊密接觸基座220,且因此,被傳送至電子元件10的熱量可藉由載片100而提供至磁性板221及/或冷卻單元222且可藉此對電子元件10進行快速冷卻。此處,磁性金屬可包括鐵(Fe)、鈷(Co)、鎳(Ni)、及其化合物。In addition, the deformation maintaining layer 120 may be formed of a magnetic metal film. Further, in this case, the slide 100 can be in close contact with the susceptor 220 by the magnetic force generated from the magnetic plate 221, and thus, heat transferred to the electronic component 10 can be supplied to the magnetic plate by the slide 100 The 221 and/or the cooling unit 222 can thereby be used to rapidly cool the electronic component 10. Here, the magnetic metal may include iron (Fe), cobalt (Co), nickel (Ni), and a compound thereof.

圖4是示出根據實施例的包括磁性層的用於電子元件的載片的剖視圖,圖4的(a)示出包括磁性層的用於電子元件的載片,且圖4的(b)示出包括磁性層的用於電子元件的載片的變形維持層的塑性變形。4 is a cross-sectional view showing a slide for an electronic component including a magnetic layer according to an embodiment, and FIG. 4(a) shows a slide for an electronic component including a magnetic layer, and (b) of FIG. The plastic deformation of the deformation maintaining layer of the slide for the electronic component including the magnetic layer is shown.

參照圖4,根據示例性實施例的用於電子元件的載片100可更包括磁性層130,磁性層130設置於變形維持層120的與面對黏著層110的一個表面相對的另一表面上。磁性層130可設置於變形維持層120的與面對黏著層110的一個表面相對的另一表面上。舉例而言,磁性層130可被形成為磁性薄膜、及其中磁性金屬粉末被形成為膜形狀的磁性金屬膜。當載片100包括磁性層130時,載片100可藉由自磁體板221產生的磁力而緊密接觸基座220。因此,被傳送至電子元件10的熱量可藉由載片100而提供至磁性板221及/或冷卻單元222且可藉此對電子元件10進行快速冷卻。Referring to FIG. 4, a slide 100 for an electronic component according to an exemplary embodiment may further include a magnetic layer 130 disposed on another surface of the deformation maintaining layer 120 opposite to a surface facing the adhesive layer 110. . The magnetic layer 130 may be disposed on the other surface of the deformation maintaining layer 120 opposite to one surface facing the adhesive layer 110. For example, the magnetic layer 130 may be formed as a magnetic thin film, and a magnetic metal film in which the magnetic metal powder is formed into a film shape. When the carrier 100 includes the magnetic layer 130, the carrier 100 can closely contact the susceptor 220 by the magnetic force generated from the magnet plate 221. Therefore, heat transferred to the electronic component 10 can be supplied to the magnetic plate 221 and/or the cooling unit 222 by the slide 100 and the electronic component 10 can be quickly cooled.

此處,磁性層130可以磁性粉末132分散於黏合劑樹脂131中的方式形成。在此種情形中,增大磁性層130的厚度可為有利的,磁性強度可藉由調整磁性粉末132的含量來調整,且僅磁性層130的厚度可被調整成具有相同磁性強度的狀態。因此,根據變形維持層120等的厚度,磁性層130可被形成為可穩定地支撐變形維持層120的厚度。另外,黏合劑樹脂131提供延性及/或彈性,藉此充當緩衝器,且亦可約束變形維持層120的變形範圍。因此,亦可防止變形維持層120撕裂及/或損壞。Here, the magnetic layer 130 may be formed in such a manner that the magnetic powder 132 is dispersed in the binder resin 131. In this case, it may be advantageous to increase the thickness of the magnetic layer 130, which can be adjusted by adjusting the content of the magnetic powder 132, and only the thickness of the magnetic layer 130 can be adjusted to a state having the same magnetic strength. Therefore, the magnetic layer 130 can be formed to stably support the thickness of the deformation maintaining layer 120 according to the thickness of the deformation maintaining layer 120 or the like. In addition, the binder resin 131 provides ductility and/or elasticity, thereby acting as a buffer, and may also constrain the deformation range of the deformation maintaining layer 120. Therefore, the deformation maintaining layer 120 can also be prevented from being torn and/or damaged.

此時,以磁性層130總重量計,可以為30重量%至90重量%的量包含磁性粉末132。當以磁性層130的總重量計、以為30重量%或小於30重量%的量包含磁性粉末132時,由於磁性強度為低的,因此載片100可能無法穩定地緊密接觸基座220。相反,當以磁性層130的總重量計、以大於90重量%的量包含磁性粉末132時,對於變形維持層120等的黏著性可能降低,或者磁性層130的延性及/或彈性降低,且因此可能無法有效地起到緩衝作用。At this time, the magnetic powder 132 may be contained in an amount of 30% by weight to 90% by weight based on the total weight of the magnetic layer 130. When the magnetic powder 132 is contained in an amount of 30% by weight or less than 30% by weight based on the total weight of the magnetic layer 130, since the magnetic strength is low, the slide sheet 100 may not stably contact the susceptor 220 in close contact. In contrast, when the magnetic powder 132 is contained in an amount of more than 90% by weight based on the total weight of the magnetic layer 130, the adhesion to the deformation maintaining layer 120 or the like may be lowered, or the ductility and/or elasticity of the magnetic layer 130 may be lowered, and Therefore, it may not be effective to buffer.

另外,磁性粉末132可具有0.1微米至30微米的平均粒度(或平均粒徑)。當磁性粉末132具有小於0.1微米的平均粒徑時,由於磁性粉末132的大小(或平均大小)過小,因此磁性粉末132可能無法輕易地均勻分散於磁性層130的整個區(或整個區域)中。相反,當磁性粉末132具有大於30微米的平均粒徑時,由於可進入磁性層130的預定區的磁性粉末132的顆粒數量有限,因此磁性強度無法被調整或者磁性層130的厚度無法被調整至磁性粉末132的平均粒徑或小於所述平均粒徑。In addition, the magnetic powder 132 may have an average particle size (or average particle diameter) of 0.1 to 30 μm. When the magnetic powder 132 has an average particle diameter of less than 0.1 μm, since the size (or average size) of the magnetic powder 132 is too small, the magnetic powder 132 may not be easily uniformly dispersed throughout the entire region (or the entire region) of the magnetic layer 130. . In contrast, when the magnetic powder 132 has an average particle diameter of more than 30 μm, since the number of particles of the magnetic powder 132 which can enter the predetermined region of the magnetic layer 130 is limited, the magnetic strength cannot be adjusted or the thickness of the magnetic layer 130 cannot be adjusted to The average particle diameter of the magnetic powder 132 is smaller than the average particle diameter.

另外,磁性層130可具有10微米至500微米的厚度。當磁性層130的厚度小於10微米時,可能無法提供為足以使載片100緊密接觸基座220的強度的磁性,或者磁性層130可能無法有效地起到緩衝作用。相反,當磁性層130的厚度大於500微米時,自電子元件10至基座220的距離增大,且因此,散熱路徑可能增大且無法有效地執行有效散熱。In addition, the magnetic layer 130 may have a thickness of 10 micrometers to 500 micrometers. When the thickness of the magnetic layer 130 is less than 10 μm, magnetic properties sufficient to make the slide 100 in close contact with the strength of the susceptor 220 may not be provided, or the magnetic layer 130 may not function effectively as a buffer. In contrast, when the thickness of the magnetic layer 130 is more than 500 μm, the distance from the electronic component 10 to the susceptor 220 increases, and thus, the heat dissipation path may increase and effective heat dissipation may not be efficiently performed.

同時,磁性層130亦可取代隨後闡述的基礎膜140的角色,且當不僅包括磁性層130而且更包括基礎膜140時,變形維持層120及基礎膜140亦可取代將變形維持層120與基礎膜140接合的黏著劑150的角色。Meanwhile, the magnetic layer 130 may also replace the role of the base film 140 to be described later, and when not only the magnetic layer 130 but also the base film 140, the deformation maintaining layer 120 and the base film 140 may also replace the deformation maintaining layer 120 and the foundation. The role of the adhesive 150 to which the film 140 is bonded.

另外,黏著層110的厚度、變形維持層120的厚度、及磁性層130的厚度之和可具有較電子元件10的下陷部分的高度大的值。舉例而言,黏著層110的厚度、變形維持層120的厚度、及磁性層130的厚度之和可具有較預定深度大的值,且當僅突出端子11a下陷至載片100中時,所述和可具有較突出端子11a的高度大的值。Further, the sum of the thickness of the adhesive layer 110, the thickness of the deformation maintaining layer 120, and the thickness of the magnetic layer 130 may have a value larger than the height of the depressed portion of the electronic component 10. For example, the sum of the thickness of the adhesive layer 110, the thickness of the deformation maintaining layer 120, and the thickness of the magnetic layer 130 may have a value larger than a predetermined depth, and when only the protruding terminal 11a is depressed into the slide 100, And a value that can have a height greater than the height of the protruding terminal 11a.

當黏著層110的厚度、變形維持層120的厚度、及磁性層130的厚度之和具有等於或小於電子元件10的下陷部分的高度的值時,黏著層110、變形維持層120、及磁性層130中的所有者應沿電子元件10的下陷部分的形狀變形。因此,當電子元件10附著至載片100時,載片100的底表面(或接觸基座的接觸表面)變得不平整且不均勻。When the sum of the thickness of the adhesive layer 110, the thickness of the deformation maintaining layer 120, and the thickness of the magnetic layer 130 has a value equal to or smaller than the height of the depressed portion of the electronic component 10, the adhesive layer 110, the deformation maintaining layer 120, and the magnetic layer The owner of 130 should be deformed along the shape of the depressed portion of the electronic component 10. Therefore, when the electronic component 10 is attached to the slide 100, the bottom surface of the slide 100 (or the contact surface contacting the susceptor) becomes uneven and uneven.

然而,如在示例性實施例中,當黏著層110的厚度、變形維持層120的厚度、及磁性層130的厚度之和具有較電子元件10的下陷部分的高度大的值時,在磁性層130的至少一部分中可產生不受電子元件10的下陷部分的形狀影響或受所述下陷部分的形狀影響較小的一部分,載片100的底表面的曲率(curvature)可降低且所述底表面可變平。因此,載片100之間的緊密接觸的強度可加強,且藉由冷卻單元222對基座220進行冷卻的效果可進一步改善。However, as in the exemplary embodiment, when the sum of the thickness of the adhesive layer 110, the thickness of the deformation maintaining layer 120, and the thickness of the magnetic layer 130 has a larger value than the height of the depressed portion of the electronic component 10, in the magnetic layer A portion of at least a portion of 130 may be affected by a shape that is not affected by the shape of the depressed portion of the electronic component 10 or that is less affected by the shape of the depressed portion, and the curvature of the bottom surface of the slide 100 may be lowered and the bottom surface Variable flat. Therefore, the strength of the close contact between the slide sheets 100 can be enhanced, and the effect of cooling the susceptor 220 by the cooling unit 222 can be further improved.

圖5是示出根據實施例的包括基礎膜的用於電子元件的載片的剖視圖,圖5的(a)示出包括基礎膜的用於電子元件的載片,且圖5的(b)示出包括基礎膜的用於電子元件的載片的變形維持層的塑性變形。5 is a cross-sectional view showing a slide for an electronic component including a base film according to an embodiment, and FIG. 5(a) shows a slide for an electronic component including a base film, and (b) of FIG. The plastic deformation of the deformation maintaining layer of the slide for the electronic component including the base film is shown.

參照圖5,用於電子元件的載片100可更包括基礎膜140,基礎膜140設置於變形維持層120的與面對黏著層110的一個表面相對的另一表面上且支撐變形維持層120。基礎膜140可設置於變形維持層120的與面對黏著層110的一個表面相對的另一表面上,支撐變形維持層120,且藉此約束變形維持層120的變形範圍。因此,可防止變形維持層120撕裂或損壞,且因此可防止變形維持層120損壞且可提高可操作性(handleability)。具體而言,基礎膜140可防止例如變形維持層120的損壞或撕裂等物理損壞,且可防止由於外部材料而對變形維持層120造成污染。此時,基礎膜140可不僅支撐變形維持層120而且支撐設置於基礎膜140上(例如,所述基礎膜的一個表面上)的黏著層110、磁性層130、或黏著劑150,且可用於防止變形維持層120撕裂及斷裂。Referring to FIG. 5, the slide 100 for an electronic component may further include a base film 140 disposed on the other surface of the deformation maintaining layer 120 opposite to one surface facing the adhesive layer 110 and supporting the deformation maintaining layer 120. . The base film 140 may be disposed on the other surface of the deformation maintaining layer 120 opposite to one surface facing the adhesive layer 110, supporting the deformation maintaining layer 120, and thereby constraining the deformation range of the deformation maintaining layer 120. Therefore, the deformation maintaining layer 120 can be prevented from being torn or damaged, and thus the deformation maintaining layer 120 can be prevented from being damaged and handleability can be improved. Specifically, the base film 140 can prevent physical damage such as damage or tear of the deformation maintaining layer 120, and can prevent contamination of the deformation maintaining layer 120 due to the external material. At this time, the base film 140 may support not only the deformation maintaining layer 120 but also the adhesive layer 110, the magnetic layer 130, or the adhesive 150 provided on the base film 140 (for example, on one surface of the base film), and may be used for The deformation maintaining layer 120 is prevented from being torn and broken.

另外,基礎膜140可提供用於緊固變形維持層120及黏著層110以約束變形維持層120的變形範圍的力(或用於緊密接觸電子元件的附著表面的力),且使黏著層110更緊密地接觸所述附著表面。In addition, the base film 140 may provide a force for fastening the deformation maintaining layer 120 and the adhesive layer 110 to constrain the deformation range of the deformation maintaining layer 120 (or a force for closely contacting the attachment surface of the electronic component), and the adhesive layer 110 is made Closer contact with the attachment surface.

基礎膜140的恢復力可為使變形維持層120能夠發生塑性變形的屈服值(或塑性變形力)或低於所述屈服值。當基礎膜140的恢復力大於使變形維持層120可進行塑性變形的屈服值時,為達到變形維持層120的第一塑性變形,需要等於或大於基礎膜140的恢復力與使變形維持層120可進行塑性變形的屈服值的屈服值之和值的按壓力。另外,即使變形維持層120首先進行塑性變形,基礎膜140的大於使變形維持層120可進行塑性變形的屈服值的恢復力可使變形維持層120塑性變形成另一形狀。因此,基礎膜140的恢復力可為使變形維持層120可進行塑性變形的屈服值或低於所述屈服值,以使變形維持層120塑性變形且變形維持層120的形狀可得到維持。The restoring force of the base film 140 may be a yield value (or plastic deformation force) at which the deformation maintaining layer 120 can be plastically deformed or lower than the yield value. When the restoring force of the base film 140 is greater than the yield value at which the deformation maintaining layer 120 can be plastically deformed, in order to achieve the first plastic deformation of the deformation maintaining layer 120, a restoring force equal to or greater than the base film 140 and the deformation maintaining layer 120 are required. The pressing force of the sum of the yield values of the yield values of the plastic deformation. In addition, even if the deformation maintaining layer 120 is first plastically deformed, the restoring force of the base film 140 larger than the yield value at which the deformation maintaining layer 120 can be plastically deformed can plastically deform the deformation maintaining layer 120 into another shape. Therefore, the restoring force of the base film 140 may be a yield value at which the deformation maintaining layer 120 can be plastically deformed or lower than the yield value, so that the deformation maintaining layer 120 is plastically deformed and the shape of the deformation maintaining layer 120 can be maintained.

同時,基礎膜140可由合成樹脂材料形成且可含有磁性粉末132。基礎膜140可由形狀可與變形維持層120的塑性變形(或形狀變形)對應地變形的合成樹脂材料形成。舉例而言,基礎膜140可藉由將聚對苯二甲酸乙二脂(polyethylene terephthalate,PET)加工成片形狀或膜形狀來形成。Meanwhile, the base film 140 may be formed of a synthetic resin material and may contain the magnetic powder 132. The base film 140 may be formed of a synthetic resin material that is deformable in shape corresponding to plastic deformation (or shape deformation) of the deformation maintaining layer 120. For example, the base film 140 can be formed by processing polyethylene terephthalate (PET) into a sheet shape or a film shape.

當膜140的厚度相較於變形維持層120的厚度而言過厚時,基礎膜140的形狀可能無法輕易地變形且具有較強的恢復力,且因此,變形維持層120的變形力(即,彈性變形力或塑性變形力)可能減小。When the thickness of the film 140 is too thick compared to the thickness of the deformation maintaining layer 120, the shape of the base film 140 may not be easily deformed and has a strong restoring force, and thus, the deformation force of the deformation maintaining layer 120 (ie, , elastic deformation force or plastic deformation force) may be reduced.

因此,基礎膜140及變形維持層120的厚度可被確定成使基礎膜140的恢復力為使變形維持層120可進行塑性變形的屈服值或低於所述屈服值。即,基礎膜140的厚度可藉由變形維持層120的厚度來確定。舉例而言,當由鋁材料形成的變形維持層120的厚度為近似9微米時,由聚對苯二甲酸乙二脂(PET)材料形成的基礎膜140的厚度被設定成近似15微米,且因此,基礎膜140的恢復力可等於或小於使變形維持層120可進行塑性變形的屈服值。Therefore, the thickness of the base film 140 and the deformation maintaining layer 120 can be determined such that the restoring force of the base film 140 is a yield value at which the deformation maintaining layer 120 can be plastically deformed or lower than the yield value. That is, the thickness of the base film 140 can be determined by the thickness of the deformation maintaining layer 120. For example, when the thickness of the deformation maintaining layer 120 formed of an aluminum material is approximately 9 μm, the thickness of the base film 140 formed of a polyethylene terephthalate (PET) material is set to approximately 15 μm, and Therefore, the restoring force of the base film 140 may be equal to or less than the yield value at which the deformation maintaining layer 120 can be plastically deformed.

另外,基礎膜140的厚度亦可根據半導體封裝11等的焊料球的大小來確定,且所述焊料球的大小越大,則基礎膜140的厚度可越薄。舉例而言,基礎膜140可被加工成可對應直至具有近似350微米的大小的焊料球的厚度。In addition, the thickness of the base film 140 may be determined according to the size of the solder ball of the semiconductor package 11 or the like, and the larger the size of the solder ball, the thinner the thickness of the base film 140 may be. For example, base film 140 can be machined to a thickness that can correspond to a solder ball having a size of approximately 350 microns.

基礎膜140可含有磁性粉末132。磁性粉末132可被添加至基礎膜140而非黏著層110,且基礎膜140亦可藉由向合成樹脂材料添加磁性粉末132來形成,且在基礎膜140的所述表面上將磁性粉末132形成為膜形狀可為極好的。此外,在此種情形中,載片100可藉由自磁性板221產生的磁力而緊密接觸基座220,且因此,被傳送至電子元件10的熱量可藉由載片100而提供至磁性板221及/或冷卻單元222且可藉此對電子元件10進行快速冷卻。此時,磁性粉末132可根據與磁性層130的磁性粉末132相同的原因而具有0.1微米至30微米的平均粒徑。The base film 140 may contain magnetic powder 132. The magnetic powder 132 may be added to the base film 140 instead of the adhesive layer 110, and the base film 140 may also be formed by adding the magnetic powder 132 to the synthetic resin material, and the magnetic powder 132 is formed on the surface of the base film 140. It can be excellent for the film shape. Further, in this case, the slide 100 can be in close contact with the susceptor 220 by the magnetic force generated from the magnetic plate 221, and thus, heat transferred to the electronic component 10 can be supplied to the magnetic plate by the slide 100 The 221 and/or the cooling unit 222 can thereby be used to rapidly cool the electronic component 10. At this time, the magnetic powder 132 may have an average particle diameter of 0.1 μm to 30 μm for the same reason as the magnetic powder 132 of the magnetic layer 130.

因此,黏著層110、變形維持層120、及基礎膜140中的至少一或多者可具有磁性性質,且不再使用磁性層130,而是黏著層110、變形維持層120、及基礎膜140中的至少一或多者可具有磁性性質。Therefore, at least one or more of the adhesive layer 110, the deformation maintaining layer 120, and the base film 140 may have magnetic properties, and the magnetic layer 130 is no longer used, but the adhesive layer 110, the deformation maintaining layer 120, and the base film 140 are used. At least one or more of them may have magnetic properties.

示例性實施例中的載片100可更包括黏著劑150,黏著劑150設置於變形維持層120與基礎膜140之間且加強變形維持層120與基礎膜140之間的黏著性。黏著劑150可在變形維持層120與基礎膜140之間設置成黏著層的形狀且可加強變形維持層120與基礎膜140之間的黏著性。舉例而言,黏著劑150可形成於變形維持層120的另一表面(或下部部分)上,且基礎膜可形成(或設置)於黏著劑150的與黏著劑150的面對變形維持層120的一個表面相對的另一表面上。此時,黏著劑150可為其中磁性粉末132分散於黏著材料中的黏著劑,且磁性粉末132可包括金屬粉末或鐵氧體粉末。The slide 100 in the exemplary embodiment may further include an adhesive 150 disposed between the deformation maintaining layer 120 and the base film 140 and reinforcing the adhesion between the deformation maintaining layer 120 and the base film 140. The adhesive 150 may be disposed in the shape of an adhesive layer between the deformation maintaining layer 120 and the base film 140 and may enhance adhesion between the deformation maintaining layer 120 and the base film 140. For example, the adhesive 150 may be formed on the other surface (or lower portion) of the deformation maintaining layer 120, and the base film may be formed (or disposed) on the facing deformation maintaining layer 120 of the adhesive 150 with the adhesive 150. One surface is opposite to the other surface. At this time, the adhesive 150 may be an adhesive in which the magnetic powder 132 is dispersed in the adhesive material, and the magnetic powder 132 may include a metal powder or a ferrite powder.

同時,基礎膜140可不受到電子元件10的下陷部分的形狀影響且可不變形。電子元件10在接觸載片100的黏著層110之後在黏著層110的方向上被按壓。因此,當黏著劑150設置於變形維持層120與基礎膜140之間時,自黏著層110僅至黏著劑150可產生與電子元件10的下陷部分(例如,半導體封裝的突出端子)的形狀對應的變形,且基礎膜140可不變形。因此,基礎膜140可用於防止為薄金屬膜的變形維持層120撕裂及斷裂。當基礎膜140的形狀不變形時,在基礎膜140的與基礎膜140的面對黏著劑150的一個表面相對的另一表面(例如,下表面)上可不出現不平整的不均勻性。因此,基礎膜140可緊密接觸裝置200的基座220,且可在藉由例如濺鍍等薄膜形成製程形成薄膜20時藉由冷卻單元222而被有效地冷卻,且因此,載片100的散熱效能可進一步提高。At the same time, the base film 140 may not be affected by the shape of the depressed portion of the electronic component 10 and may not be deformed. The electronic component 10 is pressed in the direction of the adhesive layer 110 after contacting the adhesive layer 110 of the carrier 100. Therefore, when the adhesive 150 is disposed between the deformation maintaining layer 120 and the base film 140, the self-adhesive layer 110 only to the adhesive 150 may generate a shape corresponding to the shape of the depressed portion of the electronic component 10 (for example, the protruding terminal of the semiconductor package). The deformation of the base film 140 may not be deformed. Therefore, the base film 140 can be used to prevent tearing and breaking of the deformation maintaining layer 120 for the thin metal film. When the shape of the base film 140 is not deformed, unevenness unevenness may not occur on the other surface (for example, the lower surface) of the base film 140 opposite to one surface of the base film 140 facing the adhesive 150. Therefore, the base film 140 can closely contact the susceptor 220 of the apparatus 200, and can be effectively cooled by the cooling unit 222 when the thin film 20 is formed by a thin film forming process such as sputtering, and thus, the heat dissipation of the slide 100 Performance can be further improved.

根據示例性實施例的載片100可具有近似10%至80%的伸長率。當載片100的伸長率低於近似10%時,電子元件10不易於藉由在其中將電子元件10附著至黏著層110的製程期間施加的壓力而延伸且因此,變形維持層120可能不塑性變形,或者使變形維持層120塑性變形可能需要大的按壓力。另外,即使塑性變形,變形維持層120仍可能無法根據電子元件10的下陷部分的形狀來精確地變形。The slide 100 according to an exemplary embodiment may have an elongation of approximately 10% to 80%. When the elongation of the carrier 100 is less than approximately 10%, the electronic component 10 is not easily extended by the pressure applied during the process in which the electronic component 10 is attached to the adhesive layer 110 and thus, the deformation maintaining layer 120 may not be plastic. Deformation, or plastic deformation of the deformation maintaining layer 120, may require a large pressing force. In addition, even if it is plastically deformed, the deformation maintaining layer 120 may not be accurately deformed according to the shape of the depressed portion of the electronic component 10.

相反,當載片100的伸長率大於80%時,載片100過於輕易地延伸且因此,變得難以操作變形維持層120來使變形維持層120進行塑性變形以使黏著層110緊密接觸電子元件10的附著表面。因此,不僅難以設立加壓條件以將變形維持層120的形狀改變成其中黏著層110可緊密接觸電子元件10的附著表面的形狀,而且當黏著層110未被完全均勻地加壓時,黏著層110根據每一區的壓力而不均勻地附著至電子元件10的附著表面且在黏著層110與電子元件10的附著表面之間可能出現間隙(或間隙現象)。另外,載片100以其中至少一或多個電子元件10黏著至載片100的狀態附著至中空支撐框架(圖中未示出),且在此種情形中,由於載片100的大於80%的高伸長率,載片100可能發生起伏或變形。因此,所黏著的電子元件10可能受到影響,例如可能移動或分離,且因此大量生產的穩定性可能降級。In contrast, when the elongation of the carrier sheet 100 is more than 80%, the carrier sheet 100 extends too easily and thus, it becomes difficult to operate the deformation maintaining layer 120 to plastically deform the deformation maintaining layer 120 to bring the adhesive layer 110 into close contact with the electronic component. 10 attached surface. Therefore, it is not only difficult to establish a pressing condition to change the shape of the deformation maintaining layer 120 to a shape in which the adhesive layer 110 can closely contact the attachment surface of the electronic component 10, and when the adhesive layer 110 is not completely uniformly pressurized, the adhesive layer 110 is unevenly attached to the attachment surface of the electronic component 10 according to the pressure of each zone and a gap (or gap phenomenon) may occur between the adhesive layer 110 and the attachment surface of the electronic component 10. In addition, the slide 100 is attached to the hollow support frame (not shown) in a state in which at least one or more of the electronic components 10 are adhered to the slide 100, and in this case, since the slide 100 is larger than 80% The high elongation of the slide 100 may be undulated or deformed. Therefore, the adhered electronic component 10 may be affected, for example, may move or separate, and thus the stability of mass production may be degraded.

此時,載片100的伸長率可較佳地為35%至70%以達成有效變形及高的大量生產穩定性,且更佳地可為50%至60%。At this time, the elongation of the slide sheet 100 may preferably be from 35% to 70% to achieve effective deformation and high mass production stability, and more preferably from 50% to 60%.

根據示例性實施例的載片100可具有近似25牛/平方毫米(N/mm2 )至250牛/平方毫米的抗張強度。當載片100的抗張強度小於近似25牛/平方毫米時,載片100可能因附著電子元件10的壓力(或按壓力)而撕裂或損壞。相反,當載片100的抗張強度大於近似250牛/平方毫米時,變形維持層120可能無法輕易地變形且可能因此無法塑性變形,或者彈性力(或彈性變形力)增大。因此,可能需要大的按壓力來達成塑性變形,且即使塑性變形,變形維持層120仍可能無法根據電子元件10的下陷部分的形狀來精確地變形。此時,載片100的抗張強度可較佳地為近似34牛/平方毫米至250牛/平方毫米。同時,當變形維持層120的抗張強度為高的且僅藉由黏著層110及變形維持層120亦可獲得為近似25牛/平方毫米至250牛/平方毫米的抗張強度時,載片100可僅使用黏著層110及變形維持層120來製作(或製造)。The slide 100 according to an exemplary embodiment may have a tensile strength of approximately 25 N/mm 2 (N/mm 2 ) to 250 N/mm 2 . When the tensile strength of the carrier 100 is less than approximately 25 N/mm 2, the slide 100 may be torn or damaged by the pressure (or pressing force) attached to the electronic component 10. In contrast, when the tensile strength of the slide 100 is more than approximately 250 N/mm 2 , the deformation maintaining layer 120 may not be easily deformed and may thus be unable to be plastically deformed, or the elastic force (or elastic deformation force) may increase. Therefore, a large pressing force may be required to achieve plastic deformation, and even if it is plastically deformed, the deformation maintaining layer 120 may not be accurately deformed according to the shape of the depressed portion of the electronic component 10. At this time, the tensile strength of the slide sheet 100 may preferably be approximately 34 N/mm 2 to 250 N/mm 2 . Meanwhile, when the tensile strength of the deformation maintaining layer 120 is high and the tensile strength of approximately 25 N/mm 2 to 250 N/mm 2 can be obtained only by the adhesive layer 110 and the deformation maintaining layer 120, the slide is provided. 100 can be fabricated (or manufactured) using only the adhesive layer 110 and the deformation maintaining layer 120.

圖6是示出根據另一示例性實施例的用於形成薄膜的裝置的剖視圖。FIG. 6 is a cross-sectional view illustrating an apparatus for forming a film, according to another exemplary embodiment.

參照圖6,將更詳細地闡述根據另一示例性實施例的用於形成薄膜的裝置,且將不再對與以上所述和根據示例性實施例的載片有關的部分重覆的內容予以贅述。Referring to FIG. 6, a device for forming a film according to another exemplary embodiment will be explained in more detail, and a portion of the content repeated with respect to the slide described above and according to the exemplary embodiment will not be given again. Narration.

根據另一示例性實施例的用於形成薄膜的裝置200可包括:沈積材料提供部件210,在沈積目標物件D上提供用於形成薄膜20的沈積材料21,沈積目標物件D包括用於電子元件的載片100,載片100設置有磁性層;以及基座220,用於支撐沈積目標物件D,其中基座220可包括:磁體板221,對載片100提供拉力;以及冷卻單元222,對載片100進行冷卻。The apparatus 200 for forming a thin film according to another exemplary embodiment may include: a deposition material supply part 210 on which a deposition material 21 for forming the thin film 20 is provided, and the deposition target object D includes an electronic element a carrier 100, the carrier 100 is provided with a magnetic layer; and a susceptor 220 for supporting the deposition target object D, wherein the susceptor 220 may include: a magnet plate 221 to provide a pulling force to the carrier 100; and a cooling unit 222, The slide 100 is cooled.

沈積材料提供部件210可提供用於在沈積目標物件D上形成薄膜20的沈積材料21,沈積目標物件D包括設置有磁性層的載片100。此處,載片100可為根據示例性實施例的上面黏著(或固定)有電子元件10的用於電子元件的載片100。沈積材料提供部件210可藉由選自例如以下等所有物理及化學沈積方法中的至少一種方法來提供用於在沈積目標物件D上形成薄膜20的沈積材料21:噴霧方法(spray method)、浸漬方法(dipping method)、濺鍍方法、熱沈積方法(thermal deposition method)、熱蒸鍍方法(thermal evaporation method)、或化學氣相沈積(chemical vapor deposition,CVD)方法。The deposition material supply part 210 may provide a deposition material 21 for forming a film 20 on the deposition target object D, and the deposition target object D includes a slide 100 provided with a magnetic layer. Here, the slide 100 may be a slide 100 for an electronic component to which an electronic component 10 is adhered (or fixed) according to an exemplary embodiment. The deposition material supply part 210 may provide the deposition material 21 for forming the film 20 on the deposition target object D by at least one method selected from all physical and chemical deposition methods such as the following: a spray method, impregnation A dipping method, a sputtering method, a thermal deposition method, a thermal evaporation method, or a chemical vapor deposition (CVD) method.

舉例而言,沈積材料提供部件210可設置於基座220之上且可提供用於在沈積目標物件D上形成薄膜20的沈積材料21,沈積目標物件D包括載片100。此處,沈積目標物件D可不僅包括載片100而且包括黏著至載片100的電子元件10,且沈積材料提供部件210可在電子元件10的暴露表面上提供沈積材料21且形成薄膜20。另外,藉由沈積材料提供部件210形成的薄膜20可為用於屏蔽自電子元件10釋放的電磁波的電磁干擾(electromagnetic interference,EMI)屏蔽膜,且為在電子元件10的所述暴露表面上形成電磁干擾屏蔽膜,可藉由提供金屬材料作為沈積材料來形成金屬膜。此時,沈積材料提供部件210可藉由濺鍍方法而自由金屬材料形成的目標排放沈積材料21,並將所述沈積材料提供至例如載片100等沈積目標物件D。For example, the deposition material providing part 210 may be disposed over the susceptor 220 and may provide a deposition material 21 for forming a film 20 on the deposition target object D, and the deposition target object D includes the carrier sheet 100. Here, the deposition target article D may include not only the slide 100 but also the electronic component 10 adhered to the slide 100, and the deposition material supply member 210 may provide the deposition material 21 on the exposed surface of the electronic component 10 and form the film 20. In addition, the film 20 formed by the deposition material providing member 210 may be an electromagnetic interference (EMI) shielding film for shielding electromagnetic waves released from the electronic component 10, and formed on the exposed surface of the electronic component 10. The electromagnetic interference shielding film can be formed by providing a metal material as a deposition material. At this time, the deposition material supply member 210 can freely deposit the deposition material 21 formed of the metal material by the sputtering method, and supply the deposition material to the deposition target object D such as the slide 100.

同時,在噴霧方法、濺鍍方法、熱沈積方法、熱蒸鍍方法、化學氣相沈積(CVD)方法、或類似方法的情形中,沈積材料提供部件210可藉由在沈積目標物件D上噴射沈積材料來提供沈積材料21,且在淬火方法(quenching method)的情形中,沈積材料提供部件210可將沈積材料21的溶液提供至容器中。另外,薄膜20可為不僅選擇性地形成(或塗佈)於電磁干擾屏蔽膜上而且形成於絕緣膜或電子元件10的表面上的各種塗佈膜。Meanwhile, in the case of a spraying method, a sputtering method, a thermal deposition method, a thermal evaporation method, a chemical vapor deposition (CVD) method, or the like, the deposition material supply member 210 can be sprayed on the deposition target object D The material is deposited to provide the deposited material 21, and in the case of a quenching method, the deposited material providing part 210 can provide a solution of the deposited material 21 into the container. In addition, the film 20 may be various coating films that are not only selectively formed (or coated) on the electromagnetic interference shielding film but also formed on the surface of the insulating film or the electronic component 10.

基座220為卡盤模組(chuck module)且可支撐沈積目標物件D以使沈積目標物件D的沈積表面接觸沈積材料21。舉例而言,基座220可設置於沈積提供部件210下方,且例如載片100等沈積目標物件D可安裝於基座220上。The susceptor 220 is a chuck module and can support the deposition target object D such that the deposition surface of the deposition target object D contacts the deposition material 21. For example, the susceptor 220 may be disposed under the deposition providing member 210, and a deposition target object D such as the slide 100 may be mounted on the susceptor 220.

此處,基座220可包括:磁體板221,對載片100提供拉力;以及冷卻單元222,對載片100進行冷卻。由於由例如電磁體及永久磁體等磁體產生的磁力,磁體板221可對設置有磁性層的載片100提供(或產生)拉力。自磁體板221產生的磁力可對載片100的磁性層(例如,磁性層)產生拉力,且因此,載片100可緊密接觸基座220。Here, the susceptor 220 may include a magnet plate 221 that provides a pulling force to the carrier 100, and a cooling unit 222 that cools the carrier 100. The magnet plate 221 can supply (or generate) a pulling force to the slide 100 provided with the magnetic layer due to a magnetic force generated by a magnet such as an electromagnet and a permanent magnet. The magnetic force generated from the magnet plate 221 can generate a tensile force to the magnetic layer (for example, the magnetic layer) of the slide 100, and thus, the slide 100 can closely contact the base 220.

冷卻單元222可對藉由因自磁體板221產生的磁力而產生的拉力而緊密接觸磁體板221及/或磁體板221的載片100進行冷卻,及/或對磁體板221進行冷卻。此時,冷卻單元222亦可設置(或裝設)於磁體板221外以接觸磁體板221且亦可裝設(或設置)於磁體板221內。冷卻單元222可在例如濺鍍等薄膜形成製程期間對被施加至電子元件10的熱量進行快速冷卻,且可藉由緊密接觸基座220的磁體板221的載片100對電子元件10進行冷卻。The cooling unit 222 can cool the magnet plate 221 and/or the carrier plate 100 of the magnet plate 221 by the tensile force generated by the magnetic force generated from the magnet plate 221, and/or cool the magnet plate 221. At this time, the cooling unit 222 may also be disposed (or installed) outside the magnet plate 221 to contact the magnet plate 221 and may also be installed (or disposed) in the magnet plate 221. The cooling unit 222 can rapidly cool the heat applied to the electronic component 10 during a thin film forming process such as sputtering, and can cool the electronic component 10 by the slide 100 that closely contacts the magnet plate 221 of the susceptor 220.

基座220具有可由彈性材料形成的支撐表面且沈積目標物件D是由所述支撐表面來支撐。在此種情形中,例如載片100等沈積目標物件D的接觸表面(例如,下表面)與基座220的支撐表面之間的緊密接觸力可提高。因此,來自沈積目標物件D的熱量可被順利地傳送至基座220,且冷卻單元222的冷卻效率可提高。The susceptor 220 has a support surface that may be formed of an elastic material and the deposition target object D is supported by the support surface. In this case, the close contact force between the contact surface (for example, the lower surface) of the deposition target object D such as the slide 100 and the support surface of the susceptor 220 can be improved. Therefore, heat from the deposition target object D can be smoothly transmitted to the susceptor 220, and the cooling efficiency of the cooling unit 222 can be improved.

舉例而言,基座220可更設置於磁體板221與沈積目標物件D之間的彈性層(圖中未示出)。彈性層(圖中未示出)可由彈性材料形成且使磁體板221與沈積目標物件D之間的緊密接觸力提高。因此,來自沈積目標物件D的熱量可被順利地傳送至基座220,且冷卻單元222的冷卻效率可提高。此時,當載片100藉由由於磁體板221而產生的磁力而緊密接觸基座220時,載片100與基座220之間的接觸表面的面積可由於彈性層(圖中未示出)的彈性而進一步增大。此處,彈性層(圖中未示出)可由矽酮、黏著劑、纖維玻璃片、及石墨片中的至少任一者形成。For example, the pedestal 220 may be further disposed on an elastic layer (not shown) between the magnet plate 221 and the deposition target object D. The elastic layer (not shown) may be formed of an elastic material and improve the close contact force between the magnet plate 221 and the deposition target object D. Therefore, heat from the deposition target object D can be smoothly transmitted to the susceptor 220, and the cooling efficiency of the cooling unit 222 can be improved. At this time, when the slide 100 closely contacts the susceptor 220 by the magnetic force generated by the magnet plate 221, the area of the contact surface between the slide 100 and the susceptor 220 may be due to the elastic layer (not shown). The elasticity is further increased. Here, the elastic layer (not shown) may be formed of at least any one of an anthrone, an adhesive, a fiberglass sheet, and a graphite sheet.

同時,磁體板221可包括平台,所述平台支撐沈積目標物件D及裝設於所述平台內的磁性層。此時,平台自身可由彈性材料形成,或者在所述平台上形成有由彈性材料形成的彈性層(圖中未示出)。因此,可提供支撐沈積目標物件D的支撐表面。Meanwhile, the magnet plate 221 may include a platform that supports the deposition target object D and the magnetic layer installed in the platform. At this time, the platform itself may be formed of an elastic material, or an elastic layer (not shown) formed of an elastic material may be formed on the stage. Therefore, a support surface supporting the deposition target object D can be provided.

另外,磁體板221亦可藉由自身形成為磁性層而直接具有彈性,且在磁體板221上形成有由彈性材料形成的彈性層(圖中未示出)。因此,亦可提供支撐沈積目標物件D的支撐表面。Further, the magnet plate 221 may be directly elastic by being formed into a magnetic layer by itself, and an elastic layer (not shown) formed of an elastic material is formed on the magnet plate 221. Therefore, a support surface supporting the deposition target object D can also be provided.

如此一來,基座220具有可由彈性材料形成的支撐表面,沈積目標物件D是由所述支撐表面來支撐。As such, the susceptor 220 has a support surface that can be formed of an elastic material, and the deposition target object D is supported by the support surface.

沈積目標物件D可更包括附著(或黏著)於載片100上的電子元件10,且根據示例性實施例的裝置200可(僅)在電子元件10的暴露表面上形成薄膜20。在示例性實施例中,位於電子元件10的表面上且上面無需形成薄膜20的一部分可藉由以載片100進行密封而被製作成使得不形成薄膜20,且薄膜20可僅選擇性地形成於電子元件10的上面需要形成薄膜20的暴露表面上。The deposition target article D may further include the electronic component 10 attached (or adhered) to the slide 100, and the device 200 according to an exemplary embodiment may form the film 20 only on the exposed surface of the electronic component 10. In an exemplary embodiment, a portion of the surface of the electronic component 10 on which the film 20 is not required to be formed may be fabricated by sealing with the carrier 100 such that the film 20 is not formed, and the film 20 may be selectively formed only The exposed surface of the film 20 needs to be formed on the upper surface of the electronic component 10.

舉例而言,示例性實施例的裝置200可為濺鍍裝置,且可包括:腔室(圖中未示出),提供在其中執行濺鍍製程的容置空間;濺鍍陰極,設置於腔室(圖中未示出)內;以及電漿產生部件(圖中未示出),在腔室(圖中未示出)內產生電漿。For example, the apparatus 200 of the exemplary embodiment may be a sputtering apparatus, and may include: a chamber (not shown) providing an accommodation space in which a sputtering process is performed; a sputtering cathode disposed in the cavity Inside the chamber (not shown); and a plasma generating component (not shown), produces plasma in the chamber (not shown).

一般而言,在腔室(圖中未示出)內可形成有真空壓力,且可形成用於濺鍍製程的高溫氣氛。在腔室(圖中未示出)下方,基座220可被設置成卡盤模組,且濺鍍陰極可作為沈積材料提供部件210而設置於與基座220間隔開的上部部分中。另外,可藉由利用濺鍍陰極與基座220之間的電漿產生部件(圖中未示出)產生電漿來形成電漿區,且由所述電漿產生的離子擊中所述濺鍍陰極的目標且可使得沈積材料21能夠不自所述濺鍍陰極的目標逸出。自濺鍍陰極的目標逸出的沈積材料21沈積於附著(或安裝)於載片100上的電子元件10的暴露表面上,且因此可形成例如金屬膜等薄膜20。In general, a vacuum pressure may be formed in a chamber (not shown) and a high temperature atmosphere for the sputtering process may be formed. Below the chamber (not shown), the susceptor 220 can be configured as a chuck module, and the sputter cathode can be disposed as a deposited material providing component 210 in an upper portion spaced from the susceptor 220. In addition, a plasma region can be formed by generating a plasma by using a plasma generating member (not shown) between the sputtering cathode and the susceptor 220, and ions generated by the plasma hit the splash. The target of the cathode is plated and allows the deposition material 21 to escape from the target of the sputtering cathode. The deposited material 21 escaping from the target of the sputter cathode is deposited on the exposed surface of the electronic component 10 attached (or mounted) on the slide 100, and thus a film 20 such as a metal film can be formed.

此時,當使裝置200的內部氣氛的溫度降低以防止電子元件10暴露至高溫氣氛時,用於在電子元件10的表面上形成薄膜20的能量可能不充分。因此,在濺鍍製程期間輸出增大,且此使目標的碰撞的物理量增大,且因此,形成具有近似90℃至近似130℃的溫度的內部高溫氣氛。At this time, when the temperature of the internal atmosphere of the device 200 is lowered to prevent the electronic component 10 from being exposed to a high temperature atmosphere, the energy for forming the thin film 20 on the surface of the electronic component 10 may be insufficient. Therefore, the output increases during the sputtering process, and this increases the physical amount of collision of the target, and thus, forms an internal high temperature atmosphere having a temperature of approximately 90 ° C to approximately 130 ° C.

此處,在執行濺鍍製程的同時,為快速散發被施加至電子元件10的熱量,可在基座220上設置冷卻單元222,且可設置用於在冷卻單元222的上表面上產生磁力的磁體板221。此時,無論彈性及非彈性如何,均可藉由磁性材料來在磁體板221中產生磁力,自磁體板221產生的磁力可對載片100的磁性層產生拉力。因此,載片100可緊密接觸磁體板221且藉由冷卻單元222來進行冷卻。另外,電子元件10可藉由有效地對電子元件10進行冷卻而維持在自室溫至90℃或低於90℃的溫度。Here, while the sputtering process is being performed, in order to quickly dissipate heat applied to the electronic component 10, the cooling unit 222 may be disposed on the susceptor 220, and may be provided for generating a magnetic force on the upper surface of the cooling unit 222. Magnet plate 221. At this time, regardless of the elasticity and the inelasticity, a magnetic force can be generated in the magnet plate 221 by the magnetic material, and the magnetic force generated from the magnet plate 221 can generate a tensile force to the magnetic layer of the carrier 100. Therefore, the slide 100 can be in close contact with the magnet plate 221 and cooled by the cooling unit 222. In addition, the electronic component 10 can be maintained at a temperature from room temperature to 90 ° C or less than 90 ° C by effectively cooling the electronic component 10 .

如此一來,在示例性實施例中,電子元件的至少一個表面是藉由包括藉由所述電子元件的附著壓力而塑性變形的變形維持層而被緊緊地固定,且因此,可密封及保護上面無需形成薄膜的一部分(例如所述電子元件的電極部分)。另外,在位於電子元件的表面中且上面無需形成薄膜的一部分上形成犧牲層,執行薄膜形成製程,且接著,即使不進行例如將所述犧牲層與固定於所述表面上的薄膜一起移除的製程等額外製程,僅藉由將所述電子元件附著至載片上便可密封及保護上面無需形成薄膜的所述一部分。因此,薄膜不形成於上面無需形成所述薄膜的一部分上,且所述薄膜可僅形成於上面需要形成所述薄膜的所述一部分上。另外,位於電子元件的表面上且上面無需形成薄膜的所述一部分是藉由載片來密封,且因此,所述薄膜可在必要時選擇性地僅形成於上面需要形成所述薄膜的所述一部分上。另外,當電子元件附著至載片時,可防止在所述電子元件與所述載片之間出現間隙。因此,在薄膜形成製程期間,亦可防止由於電子元件與載片之間的間隙而對所述電子元件的電極部分造成污染。另外,在載片中不形成孔或凹槽,以使製造製程可簡化,且電子元件可緊緊地固定至載片而無論所述電子元件的外部形狀如何。因此,電子元件的排列自由度可增強且所述電子元件可被緊緊地設置,且亦可防止在例如濺鍍等薄膜形成製程期間因高溫熱量而造成所述電子元件的損壞及斷裂。同時,載片包括磁性層,或者黏著層、變形維持層、及基礎膜中的至少一者被製成為磁性的。因此,載片可在薄膜形成製程期間緊密接觸用於形成薄膜的裝置的磁體板。因此,在例如濺鍍等薄膜形成製程期間,被傳送至電子元件的熱量可被順利傳送至所述載片的磁體板,且因此藉由所述裝置的冷卻單元而被有效地冷卻。另外,電子元件可藉由有效地對所述電子元件進行冷卻而維持在可容許溫度範圍。As such, in an exemplary embodiment, at least one surface of the electronic component is tightly fixed by including a deformation maintaining layer that is plastically deformed by the adhesion pressure of the electronic component, and thus, is sealable and It is not necessary to form a part of the film (for example, the electrode portion of the electronic component). Further, a sacrificial layer is formed on a portion of the surface of the electronic component and on which a film is not required to be formed, a film forming process is performed, and then, for example, the sacrificial layer is removed together with the film fixed on the surface, for example An additional process such as a process can seal and protect the portion on which the film is not formed by merely attaching the electronic component to the carrier. Therefore, the film is not formed thereon without forming a part of the film, and the film may be formed only on the portion on which the film needs to be formed. In addition, the portion of the surface of the electronic component that does not need to form a film thereon is sealed by a slide, and thus, the film may be selectively formed only on the surface on which the film is to be formed, if necessary. Part of it. In addition, when the electronic component is attached to the carrier, a gap can be prevented from occurring between the electronic component and the carrier. Therefore, it is also possible to prevent contamination of the electrode portion of the electronic component due to a gap between the electronic component and the carrier during the film forming process. In addition, no holes or grooves are formed in the slide to simplify the manufacturing process, and the electronic component can be tightly fixed to the slide regardless of the outer shape of the electronic component. Therefore, the degree of freedom of arrangement of the electronic components can be enhanced and the electronic components can be tightly disposed, and damage and breakage of the electronic components due to high-temperature heat during a film forming process such as sputtering can be prevented. Meanwhile, the slide piece includes a magnetic layer, or at least one of the adhesive layer, the deformation maintaining layer, and the base film is made magnetic. Therefore, the slide sheet can be in close contact with the magnet plate of the device for forming the film during the film forming process. Therefore, during the film forming process such as sputtering, heat transferred to the electronic component can be smoothly transferred to the magnet plate of the slide, and thus is effectively cooled by the cooling unit of the device. In addition, the electronic component can be maintained in an allowable temperature range by effectively cooling the electronic component.

根據示例性實施例的用於電子元件的載片包括變形維持層,所述變形維持層由於電子元件的附著壓力而塑性變形且緊緊地固定所述電子元件的至少一個表面,且因此,即使不形成孔或凹槽,仍可密封及保護上面無需形成薄膜的一部分(例如所述電子元件的電極部分)。另外,在上面無需形成薄膜的一部分上形成犧牲層,且執行薄膜形成製程,且接著,即使不進行例如將所述犧牲層與固定於所述表面上的薄膜一起移除的製程等額外製程,僅藉由將所述電子元件附著至載片上便可密封及保護上面無需形成薄膜的所述一部分。A slide for an electronic component according to an exemplary embodiment includes a deformation maintaining layer that is plastically deformed due to an adhesion pressure of the electronic component and tightly fixes at least one surface of the electronic component, and thus, even Without forming holes or grooves, it is still possible to seal and protect a portion of the film (such as the electrode portion of the electronic component) that does not need to be formed thereon. In addition, a sacrificial layer is formed on a portion on which the thin film is not required to be formed, and a thin film forming process is performed, and then, even if an additional process such as a process of removing the sacrificial layer together with the film fixed on the surface is not performed, The portion on which the film does not need to be formed can be sealed and protected only by attaching the electronic component to the carrier.

因此,所述薄膜不形成於上面無需形成薄膜的部分上,且所述薄膜可僅形成於上面需要形成所述薄膜的部分上。另外,位於電子元件的表面上且上面無需形成薄膜的所述一部分是藉由載片來密封,且因此,所述薄膜可在必要時選擇性地僅形成於上面需要形成所述薄膜的所述一部分上。另外,當電子元件附著至載片時,可防止在所述電子元件與所述載片之間出現間隙。因此,在薄膜形成製程期間,亦可防止由於電子元件與載片之間的間隙而對所述電子元件的電極部分造成污染。Therefore, the film is not formed on the portion on which the film is not formed, and the film may be formed only on the portion on which the film is to be formed. In addition, the portion of the surface of the electronic component that does not need to form a film thereon is sealed by a slide, and thus, the film may be selectively formed only on the surface on which the film is to be formed, if necessary. Part of it. In addition, when the electronic component is attached to the carrier, a gap can be prevented from occurring between the electronic component and the carrier. Therefore, it is also possible to prevent contamination of the electrode portion of the electronic component due to a gap between the electronic component and the carrier during the film forming process.

另外,不在載片中形成孔或凹槽,以使製造製程可簡化,且電子元件可緊緊地固定至載片而無論所述電子元件的外部形狀如何。因此,電子元件的排列自由度可增強,所述電子元件可被緊緊地設置,且亦可防止在薄膜形成製程期間因高溫熱量而造成所述電子元件的損壞及斷裂。In addition, holes or grooves are not formed in the carrier to simplify the manufacturing process, and the electronic component can be tightly fixed to the carrier regardless of the outer shape of the electronic component. Therefore, the degree of freedom of arrangement of the electronic components can be enhanced, the electronic components can be tightly disposed, and damage and breakage of the electronic components due to high-temperature heat during the film forming process can also be prevented.

同時,載片包括磁性層,或者黏著層、變形維持層、及基礎膜中的至少一者被製成為磁性的,且因此,所述載片可在薄膜形成製程期間緊密接觸用於形成薄膜的裝置的磁體板。因此,在例如濺鍍等薄膜形成製程期間,被傳送至電子元件的熱量可被順利傳送至磁體板及載片,且因此藉由所述裝置的冷卻單元而被有效地冷卻。另外,電子元件可藉由有效地對所述電子元件進行冷卻而維持在可容許溫度範圍。Meanwhile, the carrier includes a magnetic layer, or at least one of the adhesive layer, the deformation maintaining layer, and the base film is made magnetic, and thus, the carrier may be in close contact with the film forming process during the film forming process. The magnet plate of the device. Therefore, during the film forming process such as sputtering, heat transferred to the electronic component can be smoothly transferred to the magnet plate and the slide, and thus is effectively cooled by the cooling unit of the device. In addition, the electronic component can be maintained in an allowable temperature range by effectively cooling the electronic component.

以上說明中所使用的用語「在~上(on~)」的含義包括直接接觸的情形及被定位成面對上部部分或下部部分但不直接接觸所述部分的情形,可不僅包括被定位成局部地面對整個上表面或下表面的情形而且包括被定位成局部地面對所述表面的情形,且被用作在與所述表面間隔開的位置中面對上表面或下表面或者直接接觸所述表面的含義。另外,配置的數值特性可為在室溫下量測的值。The term "on~" as used in the above description includes the case of direct contact and the case of being positioned to face the upper portion or the lower portion but not directly contacting the portion, and may include not only being positioned as Partially facing the entire upper or lower surface and including being positioned to face the surface partially, and being used to face the upper or lower surface in a position spaced apart from the surface or directly The meaning of touching the surface. In addition, the numerical characteristics of the configuration may be values measured at room temperature.

目前,已參照附圖更詳細地闡述了較佳實施例。然而,本發明並非僅限於以上所述實施例,且熟習本發明所屬技術者應理解,在不背離本發明的主題的條件下,可作出各種潤飾且提出其他等效實施例。因此,本發明的保護範圍應藉由隨附申請專利範圍的技術範圍來確定。The preferred embodiments have now been described in more detail with reference to the drawings. However, the present invention is not limited to the above-described embodiments, and those skilled in the art should understand that various modifications and other equivalent embodiments can be made without departing from the subject matter of the invention. Therefore, the scope of the invention should be determined by the technical scope of the appended claims.

10‧‧‧電子元件10‧‧‧Electronic components

11‧‧‧半導體封裝11‧‧‧Semiconductor package

11a‧‧‧突出端子11a‧‧‧ protruding terminal

12‧‧‧多層式陶瓷電容器12‧‧‧Multilayer Ceramic Capacitors

20‧‧‧薄膜20‧‧‧ film

21‧‧‧沈積材料21‧‧‧Deposited materials

30‧‧‧拾取器30‧‧‧ Picker

100‧‧‧載片100‧‧‧ slides

110‧‧‧黏著層110‧‧‧Adhesive layer

120‧‧‧變形維持層120‧‧‧ deformation maintenance layer

130‧‧‧磁性層130‧‧‧Magnetic layer

131‧‧‧黏合劑樹脂131‧‧‧Binder resin

132‧‧‧磁性粉末132‧‧‧Magnetic powder

140‧‧‧膜/基礎膜140‧‧‧Metal/base film

150‧‧‧黏著劑150‧‧‧Adhesive

200‧‧‧裝置200‧‧‧ device

210‧‧‧沈積材料提供部件210‧‧‧Deposited material supply parts

220‧‧‧基座220‧‧‧Base

221‧‧‧磁體板221‧‧‧ Magnet plate

222‧‧‧冷卻單元222‧‧‧cooling unit

D‧‧‧沈積目標物件D‧‧‧Deposition target object

結合附圖閱讀以下說明,可更詳細地理解示例性實施例,在附圖中:The exemplary embodiments can be understood in more detail in conjunction with the following description in which: FIG.

圖1是示出根據示例性實施例的用於電子元件的載片的剖視圖。FIG. 1 is a cross-sectional view illustrating a slide for an electronic component, according to an exemplary embodiment.

圖2是闡述根據示例性實施例的將電子元件附著至用於電子元件的載片上的製程的概念圖。2 is a conceptual diagram illustrating a process of attaching an electronic component to a carrier for an electronic component, in accordance with an exemplary embodiment.

圖3是闡述根據示例性實施例的在電子元件的表面上進行的薄膜形成過程的概念圖。FIG. 3 is a conceptual diagram illustrating a film formation process performed on a surface of an electronic component, according to an exemplary embodiment.

圖4是示出根據示例性實施例的包括磁性層的用於電子元件的載片的剖視圖。FIG. 4 is a cross-sectional view illustrating a slide for an electronic component including a magnetic layer, according to an exemplary embodiment.

圖5是示出根據示例性實施例的包括基礎膜的用於電子元件的載片的剖視圖。FIG. 5 is a cross-sectional view illustrating a slide for an electronic component including a base film, according to an exemplary embodiment.

圖6是示出根據另一示例性實施例的用於形成薄膜的裝置的剖視圖。FIG. 6 is a cross-sectional view illustrating an apparatus for forming a film, according to another exemplary embodiment.

Claims (21)

一種用於電子元件的載片,包括: 黏著層,具有上面附著有電子元件的一個表面;以及 變形維持層,設置於所述黏著層的與一個表面相對的另一表面上,且藉由所述電子元件的附著壓力而塑性變形。A carrier for an electronic component, comprising: an adhesive layer having a surface on which an electronic component is attached; and a deformation maintaining layer disposed on the other surface of the adhesive layer opposite to a surface, and The adhesion pressure of the electronic component is plastically deformed. 如申請專利範圍第1項所述的載片,其中所述黏著層具有近似5微米至100微米的厚度。The slide of claim 1, wherein the adhesive layer has a thickness of approximately 5 microns to 100 microns. 如申請專利範圍第1項所述的載片,其中所述黏著層具有近似200克力/英吋至1,500克力/英吋的黏著力。The slide of claim 1, wherein the adhesive layer has an adhesive force of approximately 200 gram force/inch to 1,500 gram force/inch. 如申請專利範圍第1項所述的載片,其中所述變形維持層是由金屬膜形成。The slide according to claim 1, wherein the deformation maintaining layer is formed of a metal film. 如申請專利範圍第1項所述的載片,其中所述變形維持層具有近似3微米至60微米的厚度。The slide of claim 1, wherein the deformation maintaining layer has a thickness of approximately 3 microns to 60 microns. 如申請專利範圍第1項所述的載片,其中所述變形維持層具有近似10%至80%的伸長率。The slide of claim 1, wherein the deformation maintaining layer has an elongation of approximately 10% to 80%. 如申請專利範圍第1項所述的載片,其中所述變形維持層在室溫下具有近似200 W/m×K至450 W/m×K的熱傳導率。The slide of claim 1, wherein the deformation maintaining layer has a thermal conductivity of approximately 200 W/m x K to 450 W/m x K at room temperature. 如申請專利範圍第1項所述的載片,更包括磁性層,所述磁性層設置於所述變形維持層的與面對所述黏著層的一個表面相對的另一表面上。The slide according to claim 1, further comprising a magnetic layer disposed on the other surface of the deformation maintaining layer opposite to a surface facing the adhesive layer. 如申請專利範圍第8項所述的載片,其中所述磁性層是以將磁性粉末分散於黏合劑樹脂中的方式形成。The carrier sheet according to claim 8, wherein the magnetic layer is formed by dispersing a magnetic powder in a binder resin. 如申請專利範圍第9項所述的載片,其中以所述磁性層的總重量計,以近似30重量%至90重量%的量包含所述磁性粉末。The slide according to claim 9, wherein the magnetic powder is contained in an amount of approximately 30% by weight to 90% by weight based on the total weight of the magnetic layer. 如申請專利範圍第9項所述的載片,其中所述磁性粉末具有近似0.1微米至30微米的平均粒徑。The slide of claim 9, wherein the magnetic powder has an average particle diameter of approximately 0.1 to 30 μm. 如申請專利範圍第8項所述的載片,其中所述磁性層具有近似10微米至500微米的厚度。The slide of claim 8, wherein the magnetic layer has a thickness of approximately 10 microns to 500 microns. 如申請專利範圍第1項所述的載片,更包括基礎膜,所述基礎膜設置於所述變形維持層的與面對所述黏著層的一個表面相對的另一表面上且被配置成支撐所述變形維持層。The carrier sheet of claim 1, further comprising a base film disposed on the other surface of the deformation maintaining layer opposite to a surface facing the adhesive layer and configured to The deformation maintaining layer is supported. 如申請專利範圍第13項所述的載片,其中所述基礎膜的恢復力是使所述變形維持層能夠發生塑性變形的屈服值或低於所述屈服值。The slide according to claim 13, wherein the restoring force of the base film is a yield value at which the deformation maintaining layer can be plastically deformed or lower than the yield value. 如申請專利範圍第1項所述的載片,其中所述黏著層及所述變形維持層中的至少一者具有磁性性質。The slide of claim 1, wherein at least one of the adhesive layer and the deformation maintaining layer has magnetic properties. 如申請專利範圍第13項所述的載片,其中所述基礎膜是由合成樹脂材料形成且含有磁性粉末。The slide according to claim 13, wherein the base film is formed of a synthetic resin material and contains a magnetic powder. 如申請專利範圍第1項所述的載片,其中所述載片具有近似10%至80%的伸長率。The slide of claim 1, wherein the slide has an elongation of approximately 10% to 80%. 如申請專利範圍第1項所述的載片,其中所述載片具有近似25牛/平方毫米至250牛/平方毫米的抗張強度。The slide of claim 1, wherein the slide has a tensile strength of approximately 25 N/mm 2 to 250 N/mm 2 . 一種用於形成薄膜的裝置,包括: 沈積材料提供部件,在沈積目標物件上提供用於形成薄膜的沈積材料,所述物件包括用於電子元件的載片,所述載片設置有磁性層;以及 基座,被配置成支撐所述沈積目標物件,其中 所述基座包括: 磁體板,被配置成對所述載片提供拉力;以及 冷卻單元,被配置成對所述載片進行冷卻。An apparatus for forming a film, comprising: a deposition material providing member for providing a deposition material for forming a film on a deposition target object, the article comprising a carrier for an electronic component, the carrier being provided with a magnetic layer; And a susceptor configured to support the deposition target article, wherein the pedestal comprises: a magnet plate configured to provide a pulling force to the carrier; and a cooling unit configured to cool the carrier. 如申請專利範圍第19項所述的裝置,其中所述基座更包括設置於所述磁體板與所述沈積目標物件之間的彈性層。The device of claim 19, wherein the base further comprises an elastic layer disposed between the magnet plate and the deposition target. 如申請專利範圍第19項所述的裝置,其中所述沈積目標物件更包括附著於所述載片上的電子元件,且所述裝置在所述電子元件的暴露表面上形成所述薄膜。The device of claim 19, wherein the deposition target article further comprises an electronic component attached to the carrier, and the device forms the film on an exposed surface of the electronic component.
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