TW201840860A - 半導體裝置用接合線 - Google Patents
半導體裝置用接合線 Download PDFInfo
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- TW201840860A TW201840860A TW107105956A TW107105956A TW201840860A TW 201840860 A TW201840860 A TW 201840860A TW 107105956 A TW107105956 A TW 107105956A TW 107105956 A TW107105956 A TW 107105956A TW 201840860 A TW201840860 A TW 201840860A
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- 239000004065 semiconductor Substances 0.000 title claims description 16
- 229910052738 indium Inorganic materials 0.000 claims abstract description 9
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 8
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 7
- 239000000654 additive Substances 0.000 claims description 45
- 230000000996 additive effect Effects 0.000 claims description 45
- 239000013078 crystal Substances 0.000 claims description 24
- 229910052763 palladium Inorganic materials 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 5
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- 229910052737 gold Inorganic materials 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 238000009864 tensile test Methods 0.000 claims description 5
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910017767 Cu—Al Inorganic materials 0.000 abstract description 62
- 230000015572 biosynthetic process Effects 0.000 abstract description 44
- 239000010949 copper Substances 0.000 description 37
- 230000000694 effects Effects 0.000 description 29
- 238000000034 method Methods 0.000 description 28
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- 238000011156 evaluation Methods 0.000 description 23
- 238000002844 melting Methods 0.000 description 16
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- 230000006378 damage Effects 0.000 description 15
- 229910052802 copper Inorganic materials 0.000 description 14
- 210000003739 neck Anatomy 0.000 description 14
- 238000005491 wire drawing Methods 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910045601 alloy Inorganic materials 0.000 description 8
- 239000000956 alloy Substances 0.000 description 8
- 239000007789 gas Substances 0.000 description 8
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- 230000003287 optical effect Effects 0.000 description 8
- 239000010931 gold Substances 0.000 description 6
- 229910000881 Cu alloy Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 230000002950 deficient Effects 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000001887 electron backscatter diffraction Methods 0.000 description 5
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- 239000000523 sample Substances 0.000 description 5
- 229910000838 Al alloy Inorganic materials 0.000 description 4
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- 239000011247 coating layer Substances 0.000 description 4
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
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- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- 239000000314 lubricant Substances 0.000 description 2
- 229910052749 magnesium Inorganic materials 0.000 description 2
- 238000000691 measurement method Methods 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
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- 150000001875 compounds Chemical class 0.000 description 1
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- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
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- 238000010891 electric arc Methods 0.000 description 1
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- 238000000921 elemental analysis Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- 238000000761 in situ micro-X-ray diffraction Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000002401 inhibitory effect Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 230000003902 lesion Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
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- 238000007747 plating Methods 0.000 description 1
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- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
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- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
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- 230000004044 response Effects 0.000 description 1
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- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 230000001629 suppression Effects 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
- C22C9/06—Alloys based on copper with nickel or cobalt as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/08—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of copper or alloys based thereon
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
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Abstract
本發明藉由提高球形接合部之Cu-Al IMC之形成率,而提供一種適於最尖端之高密度LSI、車載LSI之半導體裝置用接合線。其特徵在於:其含有0.1質量%以上且1.3質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自In、Ga、Ge之第1添加元素群中之至少1種,剩餘部分包含Cu及不可避免之雜質。
Description
本發明係關於一種用於將半導體元件上之電極與外部引線等電路配線基板之配線連接的半導體裝置用接合線。
目前,作為將半導體元件上之電極與外部引線之間接合的半導體裝置用接合線(以下稱為接合線),主要使用線徑15~50 μm左右之細線。將接合線接合於半導體裝置之電極之方法一般而言為併用超音波之熱壓接方式,使用通用接合裝置、於其內部穿插接合線而用於連接之毛細管治具等。接合線之接合製程係藉由如下方式完成:藉由電弧熱輸入將線前端加熱熔融,利用表面張力形成球(FAB:Free Air Ball,無空氣焊球)後,將該球部壓接接合(以下稱為球形接合)於在150~300℃之範圍內經加熱之半導體元件之電極上,繼而形成線弧後,將線部壓接接合(以下稱為楔形接合)於外部引線側之電極。對於作為接合線之接合對象的半導體元件上之電極,使用於Si基板上成膜有以Al為主體之合金的電極構造,對於外部引線側之電極,使用實施有鍍Ag或鍍Pd之電極構造等。 接合線之材料主要使用金(Au)或銅(Cu)。尤其Cu具有較Au而導電率更高且更廉價之優點,故被應用於各式各樣之封裝。使用Cu之接合線大致分為於Cu表面具有Pd或Au等被覆層者(以下稱為多層Cu線)與不具有被覆層者(以下稱為單相Cu線)。一般而言,於性能方面,多層Cu線較單相Cu線而優點更多。其原因在於:藉由具有被覆層,接合線表面之抗氧化性提高,球形成性、楔形接合性提高。另一方面,於價格方面,單相Cu線優於多層Cu線。其原因在於:於製造步驟中無需形成被覆層,故而相比於多層Cu線而製造成本較低。最近,對接合線之低價格化之需求不斷高漲,單相Cu線開始受到關注。 例如,於專利文獻1中揭示有一種接合線,其特徵在於:其含有0.001重量%以上且未達0.1重量%之選自Sn、Zn、Zr、Ag、Cr及Fe中之1種或2種以上之元素,且含有0.001~2重量%之選自Mg、Ca、稀土元素、Ti、Hf、V、Nb、Ta、Ni、Pd、Pt、Au、Cd、B、In、Si、Ge、Pb、P、Sb、Bi、Se及Te中之1種或2種以上之元素,剩餘部分實質上為銅。 又,於專利文獻2中揭示有一種線材,其含有20~360 ppm之選自In、B、Bi、Ge及Si中之1種或2種以上之元素,且含有10~650 ppm之選自As、Zn、K、Sr、Mg、Ca及T1中之1種或2種以上之元素或者25~250 ppm之選自Sb、P、Li、Sn、Pb及Cd中之1種或2種以上之元素,剩餘部分包含Cu。 迄今為止,單相Cu線中,面向功率器件用途等之粗徑為主流。近年來,由於用於接合線之接合的接合裝置之高功能化或高精度化,其應用範圍不斷擴大。尤其期待應用於線之安裝數較多且可享有低成本化之優點之高密度LSI、或需求嚴格之要求性能之最尖端之車載LSI。該等面向最尖端器件之接合線中,細徑為主流,形成較通常更小之球而進行接合(以下稱為小球接合)。於小球接合中,產生了通常之球形接合中不成問題之新課題,故而於單相Cu線開發中,要求應對該課題。 [先前技術文獻] [專利文獻] [專利文獻1]日本專利特開平7-70674號公報 [專利文獻2]日本專利特開平6-168975號公報
[發明所欲解決之問題] 作為小球接合中之新課題,可列舉:球形接合部中之形成於Cu接合線與Al合金電極之接合界面的Cu與Al之金屬間化合物(Cu-Al Intermetallic Compound:Cu-Al IMC)之形成率較低。於小球接合中,球之曲率較大,難以將超音波或負載之能量均勻地傳遞至球形接合界面,故而Cu-Al IMC之形成率變低。因此,導致於球形接合時球自Al電極剝離之現象(以下稱為未接合不良)、於將被覆半導體封裝之樹脂流入時球剝離之現象(以下稱為球剝離)、高溫環境下之球形接合部之接合強度壽命(以下稱為長期可靠性)降低之現象等接合線之性能降低。 於專利文獻1中,記述有針對球形接合部之接合強度改善的效果。於專利文獻2中,記述有針對溫度循環試驗中之球形接合部之剝離的改善效果。關於此種技術,一般認為對於小球接合中之性能改善有效,但於進行小球接合之情形時,未獲得充分之改善效果。對產生不良之原因進行分析,結果發現於任一情形時,未形成Cu-Al IMC之區域均成為龜裂或剝離之起點,性能降低。又,即便球形接合部之接合強度良好,亦於進行小球接合之情形時,於接合界面大量存在未形成Cu-Al IMC之區域,Cu-Al IMC之形成率較低。如此,小球接合中之性能降低導致於球形接合部中Cu-Al IMC之形成率較低。 根據以上內容,本發明者等人認為:為了將單相Cu線應用於最尖端之高密度LSI或車載LSI,需要改善球形接合部中之Cu-Al IMC之形成率之技術。 於球形接合中,於作為球之材料之Cu與Al合金電極之界面上Cu與Al相互擴散,Cu-Al IMC成長。因此,為了遍及整個球形接合部而形成Cu-Al IMC,重要的是於整個球形接合部中使Cu與Al相互擴散。妨礙Cu與Al之相互擴散之原因之一為存在於Al合金電極之表面之Al氧化物。於Al氧化物中Cu及Al之擴散明顯較慢,因此於存在Al氧化物之區域中,Cu與Al之相互擴散受阻。為了使Cu-Al IMC成長,重要的是藉由在球形接合時施加於球之超音波及負載而有效率地破壞Al氧化物,使Al之新生面露出。 為了於球形接合時有效率地破壞Al氧化物,有效的是增加球之硬度。然而若球硬度過高,則Al電極過度變形而被掃出至球形接合部之周圍的被稱為Al飛濺之不良、或對Si晶片之損壞成問題。因此,為了有效率地破壞Al氧化物且不產生Al飛濺或對Si晶片之損傷,必須控制為合適之硬度。又,根據添加元素之種類或濃度、組合不同,有時妨礙Cu-Al接合界面之擴散,Cu-Al IMC之形成率降低。 因此,本發明者等人嘗試使添加元素之種類、濃度、組合等組成適當,以獲得針對球硬度增加之改善效果,且不妨礙Cu-Al接合界面之擴散。於使組成適當時,考慮球形成性或楔形接合性等基本性能不降低。 本發明之目的在於藉由提高球形接合部之Cu-Al IMC之形成率,而提供一種適於最尖端之高密度LSI、車載LSI之半導體裝置用接合線。 [解決問題之技術手段] 本發明者等人鑒於上述課題而進行了研究,結果發現:為了改善球形接合部之Cu-Al IMC之形成率,可藉由在Cu中除了含有特定量之Pt以外還含有適當量之In、Ga、Ge之至少1種而達成,以至完成了本發明。 本發明之接合線之特徵在於:其含有0.1質量%以上且1.3質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自In、Ga、Ge之第1添加元素群中之至少1種,剩餘部分包含Cu及不可避免之雜質。 [發明之效果] 本發明之接合線藉由含有0.1質量%以上且1.3質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自In、Ga、Ge之第1添加元素群中之至少1種,可提高球形接合部之Cu-Al IMC之形成率。
本實施形態之接合線之特徵在於:其含有0.1質量%以上且1.3質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自In、Ga、Ge之第1添加元素群中之至少1種,剩餘部分為Cu及不可避免之雜質。本實施形態之接合線可提高球形接合部之Cu-Al IMC之形成率。 (關於球形接合部之Cu-Al IMC之形成率) 於本說明書中,球形接合部之Cu-Al IMC之形成率係定義為Cu-Al IMC之形成面積於球形接合部之接合面積中所占之比率。對球形接合部之接合面積及Cu-Al IMC之形成面積之測定方法加以說明。首先,準備試樣,進行接合線之球形接合之後,於175℃下進行3小時熱處理。其原因在於促進Cu-Al IMC之成長,易於進行其後之觀察。其次,藉由酸處理僅使球部分溶解,使Al電極及Cu-Al IMC露出。其後,觀察去除球後之Al電極,測定球形接合部之接合面積與Cu-Al IMC之形成面積。球形接合部之接合面積係設為因球形接合而Al電極變形之區域之面積。Cu-Al IMC之形成面積係設為於球去除後之Al電極上存在Cu-Al IMC之區域之面積。 (Cu-Al IMC之形成率之改善效果) 發明者等人發現:藉由含有0.1質量%以上且1.3質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自第1添加元素群中之至少1種,小球接合時之Cu-Al IMC之形成率提高。具體而言,若使用本實施形態之接合線,則可將小球接合時之Cu-Al IMC之形成率提高至80%以上。又,亦未產生Al飛濺或Si晶片之損壞。使用維克氏硬度計及微小壓縮試驗機對使用本實施形態之接合線所形成之球之硬度進行測定,結果均確認到硬度提高。藉由蝕刻使球剖面之結晶組織顯現,並使用光學顯微鏡進行觀察,結果確認到構成球之晶粒變得微細。可認為本實施形態之接合線藉由複合添加Pt、與選自第1添加元素群中之至少1種以上,而協同提高晶粒微細化之效果,從而球之硬度提高。其結果推定,球形接合時之Al合金電極上之Al氧化物之破壞受到促進,Cu-Al IMC之形成率改善。 於含有濃度為0.3質量%以上且1.0質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自第1添加元素群中之至少1種之情形時,或者於含有0.1質量%以上且1.3質量%以下之Pt,且含有濃度為0.10質量%以上且0.75質量%以下之選自第1添加元素群中之至少1種之情形時,Cu-Al IMC之形成率更為提高,因而較佳。 於含有濃度為0.3質量%以上且1.0質量%以下之Pt,且含有濃度為0.10質量%以上且0.75質量%以下之選自第1添加元素群中之至少1種之情形時,Cu-Al IMC之形成率進一步提高,因而更佳。 再者,於僅含有Pt之情形、或僅含有選自第1添加元素群中之至少1種以上之元素之情形時,確認到Cu-Al IMC之形成率不充分,於實用上有問題。觀察球之結晶組織,結果可知構成球之晶粒相對較粗大,晶粒微細化之效果未充分表現。由此可認為,單獨添加Pt或僅添加第1添加元素群之情況下,晶粒微細化之效果未充分顯現,因此球硬度之改善效果不充分。 即便於接合線含有Pt,且含有選自第1添加元素群中之至少1種之情形時,亦於Pt之濃度未達0.1質量%或選自第1添加元素群中之至少1種之濃度未達0.05質量%之情形時,Cu-Al IMC之形成率較低。可認為其原因在於Pt及第1添加元素群之濃度較低,球硬度之改善效果不充分。 又,於含有多於1.3質量%之Pt之情形、或含有總計多於1.25質量%之選自第1添加元素群中之至少1種以上之情形時,亦無法獲得良好之Cu-Al IMC之形成率。使用光學顯微鏡觀察複數個球形接合部之狀況,結果大量可見球自線之中心偏離而進行接合。推定其原因在於:於形成球之階段中,球自線之中心偏離。推定產生此種現象之原因在於:Pt或選自第1添加元素群中之至少1種以上之濃度增高,由此線表面之電阻等發生變化,電弧放電變得不穩定。 (球形接合時之球壓接形狀之正圓化、Cu-Al IMC之中空之抑制效果) 本實施形態之接合線較佳為進而含有總計為0.0005質量%以上且0.0100質量%以下之選自B、P、Ca、La、Ce之第2添加元素群中之至少1種以上之元素。藉此,可提高最尖端之窄間距連接所要求之小球接合中之球壓接形狀之正圓性,進一步改善球形接合部之球中心部正下方附近之Cu-Al IMC之形成率(以下稱為球正下方之Cu-Al IMC之形成率)。具體而言,關於f20 μm之線,確認到於使用線徑之約1.4倍之球的小球接合中,球壓接形狀之正圓性提高,可適於45 μm以下之窄間距連接。又,確認到球正下方之Cu-Al IMC之形成率提高,由此可進一步提高Cu-Al IMC之形成率改善效果。對球剖面之組織進行觀察,結果確認到球之晶粒變得更微細。關於本實施形態之接合線,可認為藉由添加第2添加元素群而協同地提高Pt與第1添加元素群之晶粒微細化之效果,由此抑制球之過度變形或同一球內之變形之不均一。 (彈簧性能之改善效果) 對於本實施形態之接合線而言,進而較佳為接合線之長度方向之剖面中之結晶方位中,相對於上述接合線之長度方向而角度差為15度以下之結晶方位<100>之存在比率以面積率計為50~100%。藉此,亦可獲得如下效果:抑制使用被稱為反接合之接合方法時的被稱為彈簧不良之線弧之形狀不良。反接合係對楔形接合用之電極進行球形接合,且對球形接合用之電極進行楔形接合,藉此抑制線弧高度而實現晶片之薄型化之技術。所謂彈簧不良,係於球形接合後於球正上方切斷接合線時,對接合線施加較大衝擊,由此接合線變形為彈簧狀而線弧失去直進性之現象。針對彈簧不良,藉由利用改善線強度之效果及減少線長度方向之強度不均一之效果,可獲得改善效果。關於線強度之改善,可認為由添加Pt、第1添加元素群、第2添加元素群所得之改善效果之作用較大,關於線長度方向之強度不均一,可認為由控制結晶方位所得之改善效果之作用較大。又,由於相同原因,對於經接合之接合線於密封前倒向相鄰接合線之方向的被稱為偏斜不良之線弧形狀不良的抑制而言亦有效。 (楔形接合強度之改善效果) 對於本實施形態之接合線而言,進而拉伸試驗中之斷裂伸長率較佳為8%以上且15.5%以下,更佳為11%以上且14%以下。於高密度LSI之連接中,線徑變細,故而有助於楔形接合部之接合的面積減少,難以獲得與通常之接合同等之接合強度。針對該課題,藉由併用以下效果而於楔形接合部中獲得良好之接合強度:藉由控制斷裂伸長率而接合面積增加之效果;與藉由添加Pt及第1添加元素群之元素而使線高強度化,即便接合面積增加線亦不易斷裂之效果。具體而言,使用f20 μm之本實施形態之接合線對實施了鍍Ag之電極進行楔形接合,藉由拉線試驗而測定接合強度,結果確認到獲得4 gf以上之良好之接合強度。斷裂伸長率可藉由使製造時之加工熱處理等條件適當而進行控制。關於本實施形態之接合線,可認為藉由併用斷裂伸長率之適當化、與藉由添加Pt及第1添加元素群之元素而使線不易斷裂之效果,而獲得優異之楔形接合強度。 (熱影響部(頸部)之耐損壞性能) 本實施形態之接合線較佳為進而含有總計為0.0005質量%以上且1.0質量%以下之選自Au、Pd、Ni之第3添加元素群中之至少1種以上之元素。用於高密度LSI之連接之低線弧連接中,存在球正上方之被稱為頸部之線部分受到較大彎曲變形而損傷的情況。又,作為頸部之特徵,有受到球形成時之熱輸入之影響而晶粒粗大化,強度容易降低之傾向。因此,需求用以抑制頸部之強度降低之材料設計。本發明者等人發現藉由將第3添加元素群之元素與Pt及第1添加元素群之元素併用而添加,可提高頸部之強度,提高其損傷抑制效果。具體而言,於形成線弧長度為3 mm、線弧高度為80 μm之線弧之條件下,確認到可減少頸部之損傷之效果。 (接合線之製造方法) 對本實施形態之半導體裝置用接合線之製造方法進行說明。 (熔解方法1) 首先,使用銅純度為4 N~6 N(99.99~99.9999質量%)之高純度銅,藉由熔解而製作含有所需濃度之添加元素之銅合金。熔解可使用電弧熔解爐、高頻熔解爐等。為了防止來自大氣中之O2
、H2
等氣體之混入,較佳為於真空氛圍或Ar或N2
等惰性氣體氛圍中進行熔解。熔解後,於爐內緩冷而製作鑄錠(鑄塊)。藉由熔解而製造之鑄錠較佳為對表面進行酸洗淨、醇洗淨,並加以乾燥。 (熔解方法2) 合金化之方法可使用:將銅及高純度之添加成分直接熔解而合金化之方法;及預先製作於銅中含有3~5質量%左右之添加元素之母合金,將銅及母合金熔解而合金化之方法等。利用母合金之方法於低濃度且使元素分佈均勻之情形時有效。於使本實施形態之添加成分中以 0.5質量%以上之相對較高濃度含有Pt、第1添加元素群、第3添加元素群之元素之情形時,可利用直接添加高純度之添加成分之方法。為了以低濃度穩定地含有Pt、第1添加元素群、第2添加元素群、第3添加元素群之元素,利用母合金之方法較有效。 (伸線加工、熱處理之說明) 所製造之銅合金之鑄錠係首先藉由軋壓或鍛造加工而加工成大徑,繼而藉由伸線加工而加工得較細直至最終線徑為止。於伸線步驟中,使用可設置複數個經金剛石塗佈之模具之連續伸線裝置。連續伸線時,為了減少模具之磨耗及線之表面瑕疵,較理想的是使用潤滑液。若進行伸線加工,則有線加工硬化而模具磨耗增加之傾向,因此較佳為於加工中途階段中進行以消除變形為主要目的之中間熱處理。又,對於最終線徑,進行用以使接合線再結晶而調整斷裂伸長率之最終熱處理。中間熱處理及最終熱處理較佳為一面連續地掃描線一面進行之方法。其原因在於:若使用該方法,則與例如藉由批次式之加熱爐進行加熱之情形時相比,可減少品質之不均一,或獲得較高之生產率。再者,為了儘可能抑制熱處理時之接合線表面之氧化,較理想的是一面流通Ar氣體或N2
氣體一面進行。自控制結晶方位或控制斷裂伸長率之目的而言,中間熱處理時及最終熱處理時之線進給速度較理想的是設為20~200 m/分鐘。 (結晶方位之控制方法) 進而,藉由控制伸線時之線進給速度及中間熱處理之溫度,可調整相對於接合線之長度方向之角度差為15度以下之結晶方位<100>之存在比率。作為較佳之條件,將伸線時之線進給速度設為400~600 m/分鐘,以f110~f300 μm之線徑進行1次中間熱處理,將中間熱處理之溫度設為400~500℃,將最終熱處理之溫度設為350~550℃,將線進給速度設為20~200 m/分鐘,藉此相對於接合線之長度方向之角度差為15度以下之結晶方位<100>之存在比率增加至50%以上。 (斷裂伸長率之控制方法) 進而,藉由將伸線時之線進給速度設為470~770 m/分鐘,可減少伸線加工時之接合線表面之變形量,有可獲得具有等軸狀晶粒之再結晶組織傾向,上述等軸狀晶粒對於提高斷裂伸長率而言有效,因此可將最終熱處理後之斷裂伸長率調整為8~15%、進而11~14%。 (接合線所含之添加元素之種類及濃度之分析方法) 接合線所含之元素之濃度分析可利用ICP(Inductively Coupled Plasma,感應耦合電漿)發光分光分析裝置等。於接合線之表面吸附有氧、碳、硫等元素之情形時,可於進行分析之前藉由濺射等而將距接合線之表面1~2 nm之區域削去後進行濃度測定。作為其他方法,利用酸洗之方法亦有效。 (結晶方位之測定方法) 關於接合線之剖面區域中之結晶方位之測定,可利用微量X射線繞射法(μXRD,Micro Area X-ray Diffraction)或背向散射電子束繞射法(EBSD,Electron Backscattered Diffraction)。於EBSD測定資料之分析中,專用軟體(TSL Solutions製造之OIM analisis等)較佳。作為露出接合線之剖面之方法,可利用機械研磨、離子蝕刻法等。接合線之剖面之結晶方位可使用EBSD法確定。相對於接合線之長度方向之角度差為15度以下之結晶方位<100>之存在比率可藉由如下方式求出:相對於使用EBSD等之結晶方位之測定區域之面積,算出具有上述結晶方位<100>之區域所占之面積的比率。上述測定區域為包含線軸之與線軸平行之剖面,且將線之長度方向設為100 μm以下,將短邊方向設為線整體(線直徑)。 (斷裂伸長率之測定方法) 斷裂伸長率係設為藉由接合線之拉伸試驗所獲得之值。 [實施例] (關於樣本製作) 對樣本之製作方法進行說明。成為原材料之Cu係使用純度為99.99質量%以上且剩餘部分為不可避免之雜質者。Pt及第1添加元素群~第3添加元素群係使用純度為99質量%以上且剩餘部分為不可避免之雜質者。以使線之組成達到目標之方式,將作為添加元素之Pt、第1添加元素群、第2添加元素群、第3添加元素群之合金元素適當合金化。於Pt、第1添加元素群、第3添加元素群之元素之目標濃度為0.5質量%以上之情形時,將單一成分之元素熔解而合金化。於Pt、第1添加元素群、第2添加元素群、第3添加元素群之目標濃度未達0.5質量%之情形時,使用於銅中以成為目標濃度之方式添加有添加元素之母合金而合金化。 銅合金之熔解中使用高頻熔解爐。熔解時之氛圍係設為Ar氛圍。藉由熔解所製造之鑄錠之形狀係設為直徑為數mm之圓柱狀。針對所獲得之鑄錠,為了去除表面之氧化膜而利用硫酸、鹽酸等進行酸洗處理。其後,對鑄錠使用模具進行衝壓加工,製作f0.3~1.4 mm之中間線徑之線。伸線時之線進給速度係設為10~770 m/分鐘。潤滑液係使用市售者。此時,模具之減縮率係設為12~24%。繼而,以f110~f300 μm之線徑進行1次中間熱處理。中間熱處理之溫度係設為200~600℃。伸線加工後,以最終獲得目標斷裂伸長率之方式進行最終熱處理。中間熱處理及最終熱處理係於350~550℃之溫度下,一面以20~200 m/分鐘之進給速度連續地掃描線一面進行。熱處理時為了防止氧化,以1~2 L/min之流量流通N2
或Ar氣體。所製作之試樣之構成如表1-1、1-2、1-3及表3所示。 (評價方法) 關於線中所含之各添加元素之濃度,利用ICP分析裝置進行分析。 相對於接合線之長度方向之角度差為15度以下之結晶方位<100>之存在比率係藉由如下方式求出:相對於使用EBSD之結晶方位之測定區域之面積,算出具有上述結晶方位<100>之區域所占之面積的比率。上述測定區域為包含線軸之與線軸平行之剖面,且將線之長度方向設為100 μm以下,將短邊方向設為與線整體(線直徑)相同之長度。 (小球接合中之Cu-Al IMC之形成率之評價) 小球接合中之Cu-Al IMC之形成率之評價中使用如下樣本:於將接合線接合後於175℃下進行3小時熱處理,藉由酸處理將球去除而得之樣本。接合裝置及毛細管係使用通用品。關於接合對象之電極,使用在Si基板上成膜有厚度0.8 μm之Al-1.0原子%Si-0.5原子%Cu之合金的電極。球之大小係設為成為線徑(f20 μm)之約1.4倍之f27.5~28.5 μm之範圍。球係一面吹附N2
-4~5體積%H2
之混合氣體一面形成。氣體流量係設為0.45~0.50 L/min。再者,形成有Cu-Al IMC之區域係根據與電極材料之對比度之差異而判定。Cu-Al IMC由於反射率低於電極材料,故而於由光學顯微鏡所拍攝之圖像上顯示得較暗。利用該原理,Cu-Al IMC之面積係利用圖像處理軟體將藉由光學顯微鏡所拍攝之圖像二值化,僅提取亮度相對較暗之區域而算出面積。於任一區域中,均藉由SEM(Scanning electron microscopy,掃描式電子顯微鏡)所具備之EDS(Energy dispersive spectroscopy,能量分散型X射線分析)進行元素分析,分別預先確認無誤。用於評價之Cu-Al IMC之形成率之值係設為隨機選擇之100處球形接合部之測定值之平均值。於上述評價中,若Cu-Al IMC之形成率未達80%則判斷為於實用上有問題而記作0分,若為80%以上且未達90%則判斷為於實用上無問題而記作1分,若為90%以上且未達95%則判斷為優異而記作2分,若為95%以上且100%以下則判斷為特別優異而記作3分。評價結果記載於表2-1、2-2、4之「Cu-Al IMC之形成率」一欄中。僅0分為不合格,1分以上為合格。 (小球接合中之壓接形狀之正圓性評價) 小球接合中之球形接合部之壓接形狀之評價係自正上方觀察經接合之球形接合部,根據其正圓性進行判定。接合對象係使用在Si基板上成膜有厚度1.0 μm之Al-0.5原子%Cu之合金的電極。球之大小係設為成為線徑(f20 μm)之約1.4倍之f27.5~28.5 μm之範圍。球係一面吹附N2
-4~5體積%H2
之混合氣體一面形成。氣體流量係設為0.45~0.50 L/min。球壓接形狀之觀察係使用光學顯微鏡觀察隨機選擇之150處。將與正圓相比而偏差較大之橢圓狀者、變形具有各向異性者判斷為球形接合部之壓扁形狀不良。於上述評價中,於產生了3個以上不良之情形時,判斷為於實用上有問題而記作0分,於產生了1~2個不良之情形時判斷為無問題而記作1分,於全部獲得了良好之正圓性之情形時,判斷為極其優異而記作2分,記載於表2-1、2-2、4之「小球接合中之球壓接形狀之正圓性」一欄中。僅0分為不合格,1分以上為合格。 (小球接合中之球正下方之Cu-Al IMC之形成率之評價) 於小球接合中之球正下方之Cu-Al IMC之形成率之評價中使用如下樣本:將接合線接合後於175℃下進行3小時熱處理,藉由酸處理將球去除所得之樣本。Cu-Al IMC之形成區域之判定中使用如下方法:使用圖像處理軟體將藉由上述光學顯微鏡所拍攝之圖像二值化,僅提取亮度相對較暗之部分。中空產生率係設為於球形接合部之中心附近之f15 μm之圓形區域中,Cu-Al IMC所占之面積率。球正下方之Cu-Al IMC之形成率之值係設為隨機選擇之100處球形接合部的測定值之平均值。若球正下方之Cu-Al IMC之形成率未達70%,則判斷為於實用上有問題而記作0分,於70%以上且未達95%之情形時判斷為無問題而記作1分,於95%以上之情形時判斷為特別優異而記作2分,記載於表2-1、2-2、4之「球正下方之Cu-Al IMC之形成率」一欄中。僅0分為不合格,1分以上為合格。 (彈簧、偏斜之評價) 關於彈簧不良之評價,藉由光學顯微鏡觀察500個進行了接合之樣本,若線弧產生彈簧狀之彎曲、即彈簧不良為3個以上,則判斷為於實用上有問題而記作0分,若彈簧不良為1~2個則判斷為無問題而記作1分,若無1個彈簧不良則判斷為特別優異而記作2分,記載於表2-1、2-2、4之「彈簧性能」一欄中。關於偏斜不良之評價,藉由光學顯微鏡測定500個經接合之樣本的線弧相對於球形接合部上之接合面之垂線之偏離(偏斜量),若偏斜量之平均值為30 μm以上則判斷為於實用上有問題而記作0分,若為20 μm以上且未達30 μm則判斷為於實用上無問題而記作1分,若未達20 μm則判斷為極其良好而記作2分,分別記載於表2-1、2-2、4之「偏斜性能」一欄中。僅0分為不合格,1分以上為合格。 (楔形接合性評價) 對在一般之金屬引線框架上實施了鍍Ag之電極進行楔形接合,藉由拉線試驗而測定隨機選擇之10處之接合強度。引線框架係使用實施有1~3 μm之鍍Ag之Fe-42原子%Ni合金引線框架。於本評價中,假定較通常更嚴格之接合條件,將載台溫度設為低於一般設定溫度區域之165℃。採用10處之測定結果之平均值作為楔形接合部之接合強度。於上述評價中,若楔形接合部之接合強度未達3 gf則判斷為於實用上有問題而記作0分,若為3 gf以上則判斷為於實用上無問題而記作1分,若為3.5 gf以上則判斷為良好而記作2分,若為4 gf以上則判斷為優異而記作3分,記載於表2-1、2-2、4之「楔形接合性」一欄中。僅0分為不合格,1分以上為合格。 (頸部之耐損壞性能評價) 頸部之耐損壞性能評價係藉由SEM觀察頸部之損傷,根據該損傷之產生頻率進行判定。於本評價中,作為用以加速評價頸部之損傷之線弧形成條件,將線弧長度設定為3 mm,將線弧高度設定為80 μm。觀察隨機選擇之100處頸部,若產生了頸部之損傷處為2處以上則判斷為於實用上有問題而記作0分,若為1處則判斷為於實用上無問題而記作1分,若完全未產生損傷則判斷為優異而記作2分,記載於表2-1、2-2、4之「頸部之耐損壞性能」一欄中。 (評價結果之說明) 實施例No.1~81為含有0.1質量%以上且1.3質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自In、Ga、Ge之第1添加元素群中之至少1種,剩餘部分包含Cu及不可避免之雜質的接合線,因此為於實用上無問題之Cu-Al IMC之形成率。 實施例No.29~49、80、81為含有濃度為0.3質量%以上且1.0質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自第1添加元素群中之至少1種之情形,或者含有0.1質量%以上且1.3質量%以下之Pt,且含有濃度為0.10質量%以上且0.75質量%以下之選自第1添加元素群中之至少1種的接合線,因此可獲得優異之Cu-Al IMC之形成率。 實施例41~49為含有濃度為0.3質量%以上且1.0質量%以下之Pt,且含有濃度為0.10質量%以上且0.75質量%以下之選自第1添加元素群中之至少1種的接合線,因此可獲得特別優異之Cu-Al IMC之形成率。 實施例50~62、80、81為進而含有總計為0.0005質量%以上且0.0100質量%以下之選自B、P、Ca、La、Ce之第2添加元素群中之至少1種的接合線,因此可獲得特別優異之小球接合中之球形接合部之壓接形狀,進而可獲得特別優異之球正下方之Cu-Al IMC之形成率。 實施例63~67、80、81為於接合線之長度方向之剖面中之結晶方位中,相對於上述接合線之長度方向角度差為15度以下之結晶方位<100>之存在比率以面積率計為50%以上~100%以下的接合線,因此彈簧不良及偏斜不良之評價結果極其良好。 實施例1~67、71~76、78、79為拉伸試驗中之斷裂伸長率為8%以上且15.5%以下的接合線,因此可獲得良好之楔形接合部之接合強度。進而,實施例68~70、80、81為拉伸試驗中之斷裂伸長率為11%以上且14%以下的接合線,因此可獲得優異之楔形接合部之接合強度。 實施例72~81為進而含有總計為0.0005質量%以上且1.0質量%以下之選自Au、Pd、Ni之第3添加元素群之至少1種的接合線,因此可獲得優異之頸部之損傷抑制效果。 [表1-1]
[表1-2]
[表1-3]
[表2-1]
[表2-2]
[表3]
[表4]
Claims (5)
- 一種半導體裝置用接合線,其特徵在於:其含有0.1質量%以上且1.3質量%以下之Pt,且含有總計為0.05質量%以上且1.25質量%以下之選自In、Ga、Ge之第1添加元素群中之至少1種,剩餘部分包含Cu及不可避免之雜質。
- 如請求項1之半導體裝置用接合線,其進而含有總計為0.0005質量%以上且0.0100質量%以下之選自B、P、Ca、La、Ce之第2添加元素群中之至少1種。
- 如請求項1或2之半導體裝置用接合線,其中上述接合線之長度方向之剖面之結晶方位中,相對於上述接合線之長度方向角度差為15度以下之結晶方位<100>之存在比率以面積率計為50%以上~100%以下。
- 如請求項1或2之半導體裝置用接合線,其中上述接合線於拉伸試驗中之斷裂伸長率為8%以上且15.5%以下。
- 如請求項1或2之半導體裝置用接合線,其進而含有總計為0.0005質量%以上且1.0質量%以下之選自Au、Pd、Ni之第3添加元素群中之至少1種。
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PCT/JP2018/005091 WO2018155283A1 (ja) | 2017-02-22 | 2018-02-14 | 半導体装置用ボンディングワイヤ |
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WO2017221434A1 (ja) * | 2016-06-20 | 2017-12-28 | 日鉄住金マイクロメタル株式会社 | 半導体装置用ボンディングワイヤ |
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