TW201837983A - Exposure apparatus and lithography method, and device manufacturing method - Google Patents

Abstract

This exposure device that irradiates and exposes a target (W) with an electron beam (EB3) is provided with an irradiation device (20) having: a blanking aperture array (29) having a plurality of openings (28a) which are arranged, on an X-Y plane parallel to a surface of a target (W), along an X-axis direction and a direction crossing the X-axis direction; and optical systems (38A, 38B, 38C, 38D) which irradiate the target (W) with electron beams (EB3) that have respectively passed through the plurality of openings (28a), wherein the plurality of openings (28a) are arranged so that the positional misalignment of the plurality of electron beams to be irradiated onto the target is less than an allowable value. The arrangement of the plurality of openings (28a) is determined by considering positional information about the beams to be irradiated onto the target, the positions of the beams being determined by a coulomb force that acts between the electron beams and obtained by varying the distances between the electron beams.

Description

 Exposure apparatus and lithography method, and component manufacturing method  

The present invention relates to an exposure apparatus, a lithography method, and a device manufacturing method, and more particularly to an exposure apparatus for exposing a target by exposing a charged particle beam, and a lithography method for cutting a line pattern using an exposure apparatus, and A method of fabricating a component of a lithography process for exposing a target by a lithography method.

In recent years, complementary lithography which is utilized, for example, by a liquid immersion exposure technique using an ArF light source and a charged particle beam exposure technique (for example, an electron beam exposure technique) has been proposed. In the complementary lithography, a simple line and gap pattern (hereinafter, abbreviated as an L/S pattern as appropriate) is formed by double patterning or the like in immersion exposure using an ArF light source, for example. Next, the line pattern is cut or the through holes are formed by exposure using an electron beam.

A charged particle beam exposure apparatus having a multi-beam optical system can be preferably used for the complementary lithography (for example, refer to Patent Documents 1 and 2). However, Coulomb forces (Coulomb interactions) act between several beams illuminated from a multi-beam optical system.

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2015-133400

[Patent Document 2] US Patent Application Publication No. 2015/0200074

The first aspect provides an exposure apparatus that irradiates a charged particle beam to expose a target, and includes an irradiation device having a beam shaping member that is arranged in a predetermined plane parallel to a surface of the target a plurality of openings; and an optical system that irradiates the plurality of openings through the plurality of charged charged particle beams to the target; and the plurality of openings are configured to shift a position of the plurality of charged particle beams irradiated to the target Arranging the plurality of openings in such a manner that the position of the charged particle beam generated by the Coulomb force acting between the charged particle beams is obtained by considering a change in the distance between the charged particle beams. And the regulations.

The second aspect provides an exposure apparatus that irradiates a charged particle beam to expose a target, and includes an irradiation device, the irradiation apparatus having: a beam shaping member having a plurality of openings arranged on a surface of the target; An optical system that irradiates the target particles by the plurality of openings, respectively, to the target; and the optical system is capable of individually arranging the charged particle beam to the target by the charged particle beam respectively passing through the plurality of openings The conductive state and the disconnected state in which the charged particle beam is not irradiated onto the target, and the distance between the adjacent openings is defined as a distance corresponding to a distance of two or more of a line portion of the line formed on the target and the gap pattern. Further, the beam shaping member further includes a plurality of auxiliary openings, and the plurality of auxiliary openings are disposed adjacent to each of the plurality of openings through which the charged particle beam for cutting the line portion passes, and The aforementioned charged particle beams for cutting the aforementioned line portions are respectively passed, and the aforementioned control device is controlled by The said auxiliary conductive state of the charged particle beam and the opening of the OFF state, is adjusted for the cutting of the wire portion of the charged particle beam irradiation position becomes the conductive state of the.

The third aspect provides a lithography method comprising: exposing a target by an exposure device to form a line and gap pattern on the target; and forming the line and gap pattern by using an exposure device of the first or second aspect The cut of the line pattern.

The fourth aspect provides a device manufacturing method including a lithography process, and in the lithography process, the target is exposed by the lithography method of the third aspect.

10‧‧‧Transportation shuttle

20‧‧‧Multi-beam optical system

23‧‧‧Optical system

28‧‧‧ Beam Forming Aperture Blades

28a‧‧‧ openings

29‧‧‧Shaded aperture array

38A, 38B, 38C, 38D‧‧‧ electromagnetic lens

50‧‧‧Main control unit

85‧‧‧ coarse micro-motion platform

86‧‧‧ coarse platform drive system

90‧‧‧Micro-motion platform drive system

92‧‧‧Blind beam irradiation device

100‧‧‧electron beam exposure device

W‧‧‧ wafer

Fig. 1 is a view schematically showing the configuration of an electron beam exposure apparatus according to an embodiment.

Fig. 2 is a perspective view showing an exposure system provided in the electron beam exposure apparatus of Fig. 1.

Fig. 3 is a view showing a part of an electron beam irradiation apparatus together with a coarse micro-motion stage on which a wafer handling shuttle is mounted.

Fig. 4 is a view showing the configuration of an optical system column (multi-beam optical system).

Fig. 5(A) is a plan view showing a beam shaping diaphragm blade, and Fig. 5(B) is an enlarged view showing a circle C of Fig. 5(A).

6(A) and 6(B) are for determining the distance between the distance px between the X-axis directions of the opening 28a and the direction at which the opening 28a is inclined by a predetermined angle with respect to the X-axis (the interval between the adjacent openings 28a). According to the diagram for explanation.

Fig. 7 is a perspective view showing a state in which a wafer handling shuttle is attached to a coarse jog platform placed on a platen.

Figure 8 is a perspective view of the coarse fretting platform of Figure 7 after the wafer handling shuttle has been removed from the micro-motion platform.

Figure 9 is an enlarged view of the micro-motion platform placed on the platen.

Fig. 10 is a view showing a state in which the micro-motion stage and the magnetic screen member are removed from the coarse micro-motion stage shown in Fig. 8.

11(A) and 11(B) are diagrams for explaining the configuration of the first measurement system (the 1 and the 2).

Figure 12 is a block diagram showing the input/output relationship of the main control device constituting the control system of the electron beam exposure device.

Fig. 13(A) is a view showing a state in which all the light beams of the optical system column are simultaneously irradiated onto the L/S pattern in the complementary lithography, and Fig. 13(B) is shown on a continuous line pattern of a predetermined number of lines. A diagram in which the same Y position is formed with a state of a cut pattern.

14(A) and 14(B) are diagrams for explaining a series of processes for forming a cut pattern at the same Y position on a predetermined number of line patterns (1 and 2) .

15(A) and 15(B) are diagrams for explaining a series of processes for forming a cut pattern at the same Y position on a predetermined number of line patterns (3 and 4) .

Fig. 16 is a view (5) for explaining a series of flows in the case where a cutting pattern is formed at the same Y position on a predetermined number of line patterns.

17(A) and 17(B) are views for explaining another arrangement example of the opening on the beam shaping diaphragm blade, respectively.

18(A) and 18(B) are for performing an exposure apparatus and an exposure method of Modification 1 in which the irradiation position on the L/S pattern of the main beam is controlled by using the sub-beam of the auxiliary opening of the beam shaping diaphragm blade. Illustrated picture.

19(A) and 19(B) are views for explaining a beam shaping diaphragm blade provided in the exposure apparatus of the second modification.

20(A), 20(B) and 20(C) are diagrams for explaining the principle of correcting the X shift amount of the light beam by using the temporary cutting beam in the exposure apparatus of the second modification.

Fig. 21 is a flow chart for explaining an embodiment of a method of manufacturing a component.

Hereinafter, an embodiment will be described with reference to Figs. 1 to 16 . Fig. 1 schematically shows the configuration of an electron beam exposure apparatus 100 according to an embodiment. Since the electron beam exposure apparatus 100 is provided with an electron beam optical system as described below, the Z-axis is taken in parallel with the optical axis of the electron beam optical system, and the wafer is exposed in the plane perpendicular to the Z-axis. The scanning direction of the W movement is set to the Y-axis direction, the direction orthogonal to the Z-axis and the Y-axis is set to the X-axis direction, and the rotation (tilting) directions around the X-axis, the Y-axis, and the Z-axis are respectively set to θx, Θy and θz directions.

In the present embodiment, a configuration in which an electron beam is used as an example of a charged particle beam will be described. However, the charged particle beam is not limited to an electron beam, and may be a beam using charged particles such as an ion beam.

The electron beam exposure apparatus 100 includes a vacuum chamber 80 and an exposure system 82 housed inside the exposure chamber 81 partitioned by the vacuum chamber 80. A perspective view of exposure system 82 is shown in FIG.

As shown in FIGS. 1 and 2, the exposure system 82 includes a stage device 83 and an electron beam irradiation device 92. The electron beam irradiation device 92 includes a cylindrical lens barrel 93 shown in Fig. 2 and an electron beam optical system inside the lens barrel 93.

The platform device 83 is configured to include a coarse jog platform 85 that is detachably mounted to the wafer handling shuttle 10 that holds and moves the wafer. The electron beam irradiation device 92 is configured to irradiate an electron beam to the wafer W held by the wafer transfer shuttle 10 mounted on the coarse fine movement stage 85 to expose it.

Here, the details of the wafer transfer shuttle 10 will be described below, which is a holding member (or a table) that electrostatically adsorbs and holds the wafer. The holding member is conveyed while the wafer is held, and a plurality of exposure chambers (excluding the exposure chamber 81) including the exposure chamber 81 are used as a starting point for performing a predetermined measurement chamber (not shown). The exposure chamber is not shown in the drawings. Therefore, in the present embodiment, the holding member is referred to as a wafer transfer shuttle.

As shown in FIG. 2, the platform device 83 includes a platen 84, a coarse fretting platform 85 that moves on the platen 84, a drive system that drives the coarse fretting platform 85, and a position measuring system that measures position information of the coarse fretting platform 85. Details of the configuration of the platform device 83 and the like will be described below.

As shown in FIG. 2, the lens barrel 93 of the electron beam irradiation device 92 is supported from below by a metrology frame 94 which is formed by a circle having three convex portions at an interval of 120 degrees at a central angle in the outer peripheral portion. The annular plate member is constructed. More specifically, the lowermost end portion of the lens barrel 93 is a small diameter portion having a smaller diameter than the upper portion thereof, and the boundary portion between the small diameter portion and the upper portion thereof is a step portion. Further, in a state where the small diameter portion is inserted into the circular opening of the metrology frame 94 and the bottom surface of the step portion abuts against the upper surface of the metrology frame 94, the lens barrel 93 is supported from below by the metrology frame 94. As shown in FIG. 2, the weight measuring frame 94 is self-divided into the vacuum chamber of the exposure chamber 81 through the three hanging support mechanisms 95a, 95b, 95c (the connecting members of the flexible structure) connected to the lower three ends. The top plate (top wall) of the 80 is supported in a hanging state (refer to Fig. 1). That is, in this manner, the electron beam irradiation device 92 is suspended and supported by the vacuum chamber 80 at three points.

As shown schematically in FIG. 2 with respect to the hanging support mechanism 95a, the three hanging support mechanisms 95a, 95b, 95c have passive anti-vibration pads 96 and metal wires 97 disposed at the upper ends of the respective ones, and the metal wires 97. One of the ends is connected to the lower end of the anti-vibration pad (anti-vibration portion) 96, and the other end is connected to the metrology frame 94 and is made of steel. The anti-vibration pad 96 is fixed to the top plate of the vacuum chamber 80 and includes an air damper or a coil spring, respectively.

In the present embodiment, most of the vibration components in the Z-axis direction parallel to the optical axis of the electron beam optical system in the vibration of the floor vibration transmitted from the outside to the vacuum chamber 80 are absorbed by the anti-vibration pad 96, so Higher vibration isolation performance is obtained in a direction parallel to the optical axis of the electron beam optical system. Further, the number of natural vibrations of the hanging support mechanism is lower in a direction perpendicular to the optical axis than the direction parallel to the optical axis of the electron beam optical system. Since the three hanging support mechanisms 95a, 95b, and 95c vibrate like a pendulum in a direction perpendicular to the optical axis, the lengths of the three hanging support mechanisms 95a, 95b, and 95c (the length of the metal wire 97) are set to be sufficient. The length is such that the vibration-removing performance in the direction perpendicular to the optical axis (the ability to prevent vibration such as floor vibration transmitted from the outside to the vacuum chamber 80 to the electron beam irradiation device 92) becomes sufficiently high. Although a high vibration-removing performance can be obtained in this configuration and a large weight reduction of the mechanism portion can be achieved, the relative position of the electron beam irradiation device 92 and the vacuum chamber 80 is changed at a relatively low frequency. Therefore, in order to maintain the relative position of the electron beam irradiation device 92 and the vacuum chamber 80 in a predetermined state, a non-contact positioning device 98 (not shown in Figs. 1 and 2, see Fig. 12) is provided. The positioning device 98 is disclosed, for example, in International Publication No. 2007/077920, and may include a six-axis acceleration sensor and a six-axis actuator. The positioning device 98 is controlled by the main control device 50 (refer to Fig. 12). Thereby, the relative position of the electron beam irradiation device 92 with respect to the X-axis direction, the Y-axis direction, and the Z-axis direction with respect to the vacuum chamber 80 and the relative rotation angles around the X-axis, the Y-axis, and the Z-axis are maintained at a fixed state. (established state).

In Fig. 3, a part of the electron beam irradiation device 92 is shown together with a coarse micro-motion stage 85 on which the transport shuttle 10 is attached. In FIG. 3, the metrology frame 94 is omitted from illustration. The electron beam irradiation device 92 includes an electron beam optical system including a lens barrel 93 and m (m, for example, 100) optical system columns 20 arranged in an array in the XY plane in the lens barrel 93. Each optical system column 20 includes a multi-beam optical system capable of illuminating n (neg, 5000) beams that can be individually turned on, off, and deflectable. Hereinafter, for convenience, the multi-beam optical system is referred to as a multi-beam optical system 20, an optical system column (multi-beam optical system) 20, or a multi-beam optical system (optical system column) using the same symbols as those of the optical system column. 20.

The configuration of the optical system column (multi-beam optical system) 20 is shown in FIG. The optical system column (multi-beam optical system) 20 includes a cylindrical casing (cylinder) 21, an electron gun 22 housed in the cylinder 21, and an optical system 23.

The optical system 23 includes a first aperture plate 24, a primary beam shaping plate 26, a beam shaping aperture blade 28, a shielding blade 30, and a final aperture 32 which are disposed in a predetermined position relationship from the top to the bottom of the electron gun 22, respectively. Among them, the beam shaping diaphragm blade 28 is disposed close to the shielding blade 30.

An asymmetrical illumination optical system 34 is disposed between the first aperture plate 24 and the primary beam shaping plate 26. Further, between the primary beam shaping plate 26 and the beam shaping diaphragm blade 28, the electromagnetic lenses 36A and 36B are arranged at a predetermined interval in the vertical direction. Between the shielding blade 30 and the final aperture 32, the electromagnetic lenses 38A and 38B are arranged at a predetermined interval in the vertical direction. Further, below the final aperture 32, the electromagnetic lenses 38C and 38D are arranged at a predetermined interval in the vertical direction. On the inner side of the electromagnetic lens 38D, the platform feedback deflector 40 is disposed substantially concentrically with the electromagnetic lens 38D at a slightly higher position.

The electron beam EB _{0 is} emitted from the electron gun 22 at a predetermined acceleration voltage (for example, 50 keV). The electron beam EB ₀ is formed into a circular cross section that is symmetrical about the optical axis AX1 by passing through the opening 24a of the first aperture plate 24.

Asymmetric illumination optical system 34 generates an electron beam EB _1, EB ₁ so that the electron beam forming an electron beam EB ₀ of the circular cross section is deformed in a direction (e.g. X-axis direction) is long and in the other direction (e.g., Y-axis Direction) The shape of the shorter longitudinal section.

The asymmetrical illumination optical system 34 can be configured, for example, by an electrostatic quadrupole lens group that generates an electrostatic quadrupole field in the vicinity of the optical axis AX1. The electron beam EB _{1 having a} longitudinal length can be formed by appropriately adjusting the electrostatic quadrupole field generated by the asymmetric illumination optical system 34.

The electron beam EB ₁ illuminates a region of the disk-shaped primary beam shaping plate 26 that is formed in the center portion of the Y-axis direction and has a slit-like opening 26a that is long in the X-axis direction. The electron beam EB ₁ is formed into an electron beam EB ₂ by the opening 26a of the primary beam shaping plate 26, and is imaged on the beam shaping aperture blade 28 by the electromagnetic lens 36A and the electromagnetic lens 36B, and the aperture beam is formed on the beam The irradiation area of the 28th extending in the X-axis direction corresponding to the arrangement area of the opening described below is irradiated.

The beam shaping diaphragm blade 28 is provided with a plurality of openings at positions corresponding to the openings 26a of the primary beam shaping plate 26. As will be described in more detail, in the beam shaping diaphragm blade 28, as shown in the plan view of FIG. 5(A), a plurality of openings 28a are formed at predetermined intervals in a region of a parallelogram extending long in the X-axis direction. . As shown in FIG. 5(B) in which the circle C of FIG. 5(A) is enlarged, the opening 28a is formed by a predetermined number (for example, 1000) of openings 28a arranged at a predetermined pitch 5px in the X-axis direction. The openings are arranged in the Y-axis direction at 5 intervals at a predetermined interval of 6py. However, in order to prevent the plurality of openings 28a from overlapping each other in the X-axis direction, the respective openings 28a of the opening rows adjacent to the -Y side are shifted by px in the +X direction. Here, when the dimension px=p in the X-axis direction of the opening 28a is used, the dimension py in the Y-axis direction is p/2 to p, for example, 4 p/7. In this case, the distance between the closest openings 28a is about 3.57p, and the shape of the opening 28a is rectangular (rectangular). Further, it may be set to py=p, and at this time, the shape of the opening 28a is square. Here, p is, for example, 0.5 μm to 2 μm, preferably 1 μm or 1.5 μm. Further, the basis for determining the distance between the opening 28a between the openings 28a and the closest opening 28a in the above-described manner (the distance between the directions in which the predetermined angle is inclined with respect to the X-axis) will be described below.

Returning to FIG. 4, the shielding blade 30 is disposed below the beam shaping diaphragm blade 28. In the shielding blade 30, an opening 30a is formed in a portion corresponding to the plurality of openings 28a of the beam shaping diaphragm blade 28. Each of the openings 30a is formed to be larger than the opening 28a so that the electron beam passing through the opening 28a can pass.

Further, on both sides of the opening 30a in the Y-axis direction, an electron beam EB ₃ emitted from the opening 30a is biased toward the shielding electrode. Although not shown, each of the shielding electrodes is connected to the driving circuit through the wiring and the terminal. Further, the shielding electrode and the wiring are integrally formed by patterning a conductor film having a thickness of about several μm to several tens of μm on the body of the shielding blade 30. In order to prevent damage due to irradiation of the electron beam, the shielding electrode is preferably formed on the downstream side of the electron beam of the body of the shielding blade 30.

When a voltage is applied to the shielding electrode, the electron beam EB ₃ passing through the opening 30a is largely bent. As a result, as shown in FIG. 4, the electron beam EB _off bent by the shielding electrode is guided to the outside of the circular opening 32a of the final aperture 32 disposed below the shielding blade 30, and is blocked by the final aperture 32. The opening 32a is formed near the optical axis of the final aperture 32.

On the other hand, in the case where a voltage is not applied to the shield electrode, the electron beam EB ₃ passes through the opening 32a of the final aperture 32. That is, the conduction and disconnection of the respective electron beams EB ₃ can be controlled depending on whether or not a voltage is applied to each of the shielding electrodes. Two electromagnetic lenses are disposed above and below the final aperture 32, that is, the first electromagnetic lens 38A, the second electromagnetic lens 38B, the third electromagnetic lens 38C, and the fourth electromagnetic lens 38D are disposed. By the cooperation of the first to fourth electromagnetic lenses 38A to 38D, the image of the plurality of openings 28a of the beam shaping diaphragm blade 28 is reduced by a predetermined reduction magnification γ and imaged on the surface of the wafer W. Further, hereinafter, the beam shaping diaphragm blade 28 and the shielding blade 30 are collectively referred to as a shielding aperture array 29 as appropriate.

The stage feedback deflector 40 disposed below the final aperture 32 is composed of an electrostatic deflector having a configuration in which the optical axis AX1 is viewed from the same direction (X-axis direction) as the line of the opening 28a. One of the pair of electrode plates. The irradiation position of the electron beam EB ₃ can be finely adjusted in the X-axis direction by the platform feedback deflector 40. Further, in the present embodiment, the stage feedback deflector 40 is constituted by an electrostatic deflector, but the configuration is not limited thereto. For example, the platform feedback deflector 40 may be configured by an electromagnetic deflector that disposes at least one pair of coils across the optical axis, and the magnetic field generated by the current flowing through the coils causes the beam Bias.

The components of the electron gun 22 and the optical system 23 described so far are controlled by the control unit 64 based on the instruction of the main control device 50 (see FIG. 12).

Further, a pair of reflected electron detecting devices 42 _x1 and 42 _x2 are provided on both sides of the fourth electromagnetic lens 38D in the X-axis direction. In addition, although not shown in FIG. 4, a pair of reflected electron detecting devices 42 _y1 and 42 _y2 (see FIG. 12) are actually provided on both sides of the fourth electromagnetic lens 38D in the Y-axis direction. Each of the reflected electron detecting devices is composed of, for example, a semiconductor detector, and detects a reflection component generated from an alignment mark or a reference mark such as a reference mark on the wafer, where is reflected electrons, and is detected. The detection signal corresponding to the reflected electrons is sent to the signal processing device 62 (see Fig. 12). The signal processing device 62 amplifies the detection signals of the plurality of reflected electron detecting devices 42 by an amplifier (not shown), performs signal processing, and transmits the processing results to the main control device 50 (see FIG. 12).

When the 5,000 light beams of the optical system column (multi-beam optical system) 20 are all in an on state (the state in which the electron beam is irradiated to the wafer), for example, in a parallelogram region (exposure region) of 100 μm × 50 nm, The arrangement of the 5000 openings 28a of the beam shaping aperture blades 28 corresponds to 5000 points set by the positional relationship, and at the same time forms a rectangular spot of the electron beam which is smaller than the resolution limit of the ultraviolet light exposure device. The size of each spot is, for example, the size of the X-axis direction is γ. p = 20 nm, and the size in the Y-axis direction is 4 γp / 7 = 11.43 nm. γ is the magnification of the optical system column 20. When p = 1 μm, γ is 1/50.

In the present embodiment, one optical system unit 70 is constituted by the electron gun 22, the optical system 23, the reflected electron detecting device 42, the control unit 64, and the signal processing device 62 in the column 21. Moreover, the optical system unit 70 is provided in the same number (100) as the multi-beam optical system (optical system column) 20 (refer to FIG. 12).

The 100 multi-beam optical system 20 corresponds approximately 1:1 to, for example, 100 illumination areas formed on a 300 mm wafer (or subsequently formed according to an illumination pattern). In the electron beam exposure apparatus 100, each of the 100 multi-beam optical systems 20 is arranged such that a plurality of (5000) rectangular electron beams of, for example, 20 nm × 11.43 nm, which can be turned on, off, and biased, are arranged in parallel as described above. Inside the quadrilateral area (exposure area). While scanning the wafer W in the predetermined scanning direction (Y-axis direction) for the exposed region, the rectangular spots of the plurality of electron beams are deflected and turned on and off, thereby exposing 100 illumination areas on the wafer. Form a pattern. Therefore, in the case of a 300 mm wafer, even if the moving stroke of the wafer during exposure is somewhat marginal, it is sufficient as long as it is several tens of mm, for example, 50 mm.

Although the context has been described, the basis for determining the distance between the x-axis direction of the opening 28a and the distance between the closest opening 28a (the distance between the directions of the predetermined angle with respect to the X-axis) is determined in the above manner. Be explained.

As shown in Fig. 6(A), consider two linear currents whose mutual distance is R. The direction from the mask toward the wafer is set to the +z direction, and the direction of the second linear current with respect to the first linear current is set to the +x direction. First, considering the electric field E(R) formed by the first linear current at one point P of the second linear current, it is expressed by the following formula (1).

E(R)= σ /(4 π ε ₀ R)∫ sin θ d θ (1)

Here, σ is the charge line density of the first linear current, and ε ₀ is the vacuum dielectric constant. Further, θ is an angle formed by the charge from the first linear current P and the Z axis, and the range of θ becomes 0 ≦ θ π in consideration of infinity.

The point is that, as is clear from equation (1), the electric field E(R) is inversely proportional to the distance R between the beams, and the magnitude of the force generated by the electric field E(R) to the electrons at the point P is F= eE(R)

Therefore, F is also inversely proportional to R (in addition, e is the charge of electrons).

The electrons flying from the reticle to the wafer receive the force F in the x direction. As a result, if the electrons constituting the second linear current are shifted in the x direction on the wafer surface, that is, the positional deviation Δx, according to the equation of motion F =eE(R)=m(d ² x/dt ² ), and is represented by the following formula (2).

△x=eE(R)/(2m). t ² ......(2)

Here, m is the electron mass and t is the electronic flight time.

The point is that the electric field E(R) is inversely proportional to the distance R between the beams. Therefore, as shown in Fig. 6(B), the positional shift Δx is also inversely proportional to the distance R between the beams.

It is therefore believed that the positional shift Δx resulting from the interaction between the beams is qualitatively inversely proportional to the distance between the aperture 28a of the shadow aperture array 29 (more precisely, the beam shaping aperture blade 28).

Therefore, in the present embodiment, the Coulomb force acting on the plurality of light beams (corresponding to the first linear current and the second linear current) that respectively pass through the plurality of openings 28a of the aperture array 29 is generated. The arrangement of the plurality of openings 28a on the aperture array 29 is defined so that the irradiation position of the light beam (corresponding to the first linear current) on the target surface is shifted (corresponding to the above-mentioned Δx) to be equal to or less than the allowable value. In the present embodiment, the arrangement (arrangement) of the plurality of openings 28a on the shadow aperture array 29 is defined in consideration of the distance between the plurality of light beams (corresponding to the above R) and the plurality of light beams. The positional shift (corresponding to the above-mentioned Δx) of the light-conducting state of the light generated by the Coulomb force acting on each other, that is, the positional shift Δx generated by the interaction between the above-mentioned beams qualitatively and the masking aperture array 29 ( More precisely, the distance between the openings 28a of the beam shaping aperture blades 28) is inversely proportional (the relationship represented by the graph of Fig. 6(B)), and if other expressions are used, the distance between the beams is changed. The positional information of the light beam in the conduction state due to the Coulomb force acting between the beams is obtained. For example, the plurality of openings 28a are defined as twice the length p of the opening in the X-axis direction, that is, 2 p or more, that is, the complementary lithography is performed using the electron beam exposure apparatus 100 of the present embodiment, and the line and gap patterns are cut. In the case, the distance between the line portions to be cut is 2p or more.

However, it is also conceivable that the allowable value is defined based on the adjustment ability of the main control device 50 to adjust the irradiation position of the light beam in the ON state by the control unit 64, and the position of the light beam in the ON state is shifted (corresponding to the above-mentioned Δ). x) the distance between the X-axis directions of the plurality of openings 28a of the beam shaping diaphragm blades 28 and the distance between the closest openings 28a (the distance between the directions of the predetermined angle with respect to the X-axis) is defined as a predetermined value or less. ). For example, the distance between the X-axis directions may be determined in consideration of the ability of the platform feedback deflector 40 to adjust the X-axis direction of the irradiation position of the electron beam EB ₃ .

Next, the configuration of the platform device 83 and the like will be described. FIG. 7 is a perspective view showing a state in which a wafer transfer shuttle (hereinafter, simply referred to as a transport shuttle) 10 is attached to the coarse jog platform 85 of the stage device 83. Fig. 8 is a perspective view showing the coarse fretting platform 85 shown in Fig. 7 in a state in which the transport shuttle 10 is detached (detached).

The platen 84 provided in the stage unit 83 is actually disposed on the bottom wall of the vacuum chamber 80 dividing the exposure chamber 81. As shown in FIGS. 7 and 8, the coarse fretting platform 85 includes a coarse motion platform 85a and a fine motion platform 85b. The coarse motion stage 85a includes a portion that is disposed at a predetermined interval in the Y-axis direction and extends in a pair of quadrangular prism shapes in the X-axis direction, and is movable on the platen 84 in a predetermined stroke in the X-axis direction, for example, 50mm. The fine movement stage 85b can move a predetermined stroke, for example, 50 mm in the Y-axis direction with respect to the coarse motion stage 85a, and can be in the remaining 5 degrees of freedom direction, that is, the X-axis direction, the Z-axis direction, and the rotation direction around the X-axis (θx direction). The movement in the direction of rotation about the Y-axis (θy direction) and the direction of rotation about the Z-axis (θz direction) is shorter than the direction in the Y-axis direction. In addition, in the state in which the square columnar portion of one of the coarse motion stages 85a is actually prevented from being moved in the Y-axis direction of the fine movement stage 85b, the connection member is connected and integrated by a connection member (not shown).

The coarse motion stage 85a is driven by a coarse motion platform drive system 86 (refer to FIG. 12) in a predetermined stroke (for example, 50 mm) in the X-axis direction (refer to the longer arrow in the X-axis direction of FIG. 10). In the present embodiment, the coarse motion stage drive system 86 is constituted by a single-axis drive mechanism that does not cause magnetic flux leakage, for example, a feed screw mechanism using a ball screw. The coarse motion platform drive system 86 is disposed between a quadrangular column portion of one of the quadrangular column portions of the coarse motion platform and the pressure plate 84. For example, a screw shaft is attached to the pressure plate 84, and a ball (nut) is attached to a square columnar portion. Further, a ball may be attached to the platen 84, and a screw shaft may be attached to a quadrangular columnar portion.

Further, one of the four-corner columnar portions of one of the thick-moving stages 85a is formed to move along a guide surface (not shown) provided on the platen 84.

The screw shaft of the ball screw is rotationally driven by a stepping motor. Alternatively, the coarse motion platform drive system 86 may be configured by a single-axis drive mechanism including an ultrasonic motor as a drive source. Regardless of which one is set, the magnetic field fluctuation caused by the leakage of the magnetic flux does not affect the positioning of the electron beam. The coarse motion platform drive system 86 is controlled by the main control device 50 (refer to FIG. 12).

As shown enlarged in the perspective view of Fig. 9, the fine movement stage 85b is constituted by a member having a rectangular frame shape in an XZ cross section penetrating in the Y-axis direction, and is movable in the XY plane on the platen 84 by the weight eliminating device 87. The ground is supported. A plurality of reinforcing ribs are disposed on the outer surface of the side wall of the fine movement platform 85b.

A yoke 88a having a rectangular frame shape and extending in the Y-axis direction and a pair of magnet units 88b fixed to the upper and lower faces of the yoke 88a are provided inside the hollow portion of the fretting platform 85b. The yoke 88a and the pair of magnet units 88b constitute a rotor 88 of a motor that drives the micro-motion stage 85b.

Fig. 10 shows a state in which the fine movement stage 85b and the magnetic screen member indicated by reference numeral 91 are removed from Fig. 8 . As shown in Fig. 10, in correspondence with the rotor 88, a stator 89 composed of a coil unit is placed between the one of the coarse movement stages 85a and the square column portions. The stator 89 and the rotor 88 constitute a closed-field type magnetic motor type motor 90 that allows the rotor 88 to move in the Y-axis direction by a predetermined stroke with respect to the stator 89 as indicated by arrows in the respective directions of FIG. For example, 50 mm can be micro-driven in the X-axis direction, the Z-axis direction, the θx direction, the θy direction, and the θz direction. In the present embodiment, the motor platform 90 constitutes a fine-motion stage drive system that drives the fine movement stage 85b in the six-degree-of-freedom direction. Hereinafter, the jog platform drive system will be referred to as the jog platform drive system 90 using the same symbols as the motor. The jog platform drive system 90 is controlled by the main control unit 50 (refer to FIG. 12).

The XZ section is inverted U-shaped in a state in which one of the four-column column portions of the coarse motion platform 85a and the four-corner column portions are, for example, as shown in FIG. 7 and FIG. 8 and the like, and the two sides of the upper surface of the motor 90 and the X-axis direction are covered. A magnetic screen member 91. That is, the magnetic shield member 91 is formed to extend in a direction (Y-axis direction) intersecting with the direction in which the quadrangular prism portion extends, and is provided to face the upper surface portion in a non-contact manner with the upper surface of the motor 90, and the motor The side of the 90 is opposite to the side portion in a non-contact manner. In a state in which the magnetic screen member 91 is inserted into the hollow portion of the fine movement stage 85b, the lower surface of both end portions in the longitudinal direction (Y-axis direction) of the side surface portion is fixed to one of the four corner posts of the coarse movement stage 85a. Upper surface. Further, a portion of the side surface portion of the magnetic screen member 91 other than the lower surface of the both end portions is opposed to the bottom wall surface (lower surface) of the inner wall surface of the fine movement stage 85b in a non-contact manner. That is, the magnetic shield member 91 is inserted into the hollow portion of the fine movement stage 85b without hindering the movement of the rotor 88 with respect to the stator 89.

As the magnetic shield member 91, a laminated magnetic shield member composed of a film of a plurality of magnetic materials laminated with a predetermined gap (gap) can be used. Further, a magnetic shield member in which a film of two kinds of materials having different magnetic permeability is alternately laminated may be used. The magnetic screen member 91 covers the upper surface and the side surface of the motor 90 over the entire length of the movement of the rotor 88, and is fixed to the coarse motion platform 85a. Therefore, the entire range of movement of the fine movement platform 85b and the coarse motion platform 85a can be substantially surely Prevent magnetic flux from leaking upward (on the side of the electron beam optical system).

As shown in Fig. 9, the weight eliminating device 87 has a metal bellows type air spring (hereinafter, abbreviated as an air spring) 87a whose upper end is connected to the lower surface of the fine movement stage 85b, and a flat plate connected to the lower end of the air spring 87a. A base slider 87b formed of a plate member. A bearing portion (not shown) that ejects air inside the air spring 87a to the upper surface of the pressure plate 84 is provided on the base slider 87b, and a bearing surface of the pressurized air ejected from the bearing portion and the pressure plate 84 are provided. The static pressure between the upper surfaces (pressure in the gap) supports the weight eliminating device 87, the fine movement platform 85b, and the rotor 88 (including the handling shuttle 10, etc. when the transport shuttle 10 is attached to the coarse jog platform 85) . Further, the air spring 87a is supplied with compressed air through a pipe (not shown) connected to the fine movement stage 85b. The base slider 87b is non-contactly supported by the pressure plate 84 through a differential exhaust type air static pressure bearing to prevent air ejected from the bearing portion toward the pressure plate 84 from leaking to the surroundings (exposure chamber).

Here, a structure in which the transport shuttle 10 is detachably attached to the coarse fretting platform 85 and more accurately attached to the fine motion stage 85b will be described.

As shown in Fig. 8, three triangular tapered groove members 12 are provided on the upper surface of the fine movement stage 85b. The triangular tapered groove member 12 is provided, for example, at a position of three vertices of a substantially equilateral triangle in plan view. The triangular tapered groove member 12 can engage a spherical body or a hemisphere provided on the transport shuttle 10 in the following manner, and can form a motion coupling together with the spherical body or the hemisphere. Further, although the petal-like triangular pyramidal groove member 12 composed of three plate members is shown in Fig. 8, since the triangular tapered groove member 12 has the same function as the triangular tapered groove which is in point contact with the sphere or the hemisphere, respectively. Therefore, it is called a triangular pyramidal groove member. Therefore, instead of the triangular tapered groove member 12, a single member formed with a triangular tapered groove can be used.

In the present embodiment, as shown in FIG. 7, three spheres or hemispheres (in the present embodiment, balls) 14 are provided on the transport shuttle 10 in accordance with the three triangular tapered groove members 12. The transport shuttle 10 is formed in a hexagonal shape in which the apexes of the equilateral triangle are cut in plan view. As will be described in more detail, in the transport shuttle 10, the cutout portions 10a, 10b, and 10c are formed in the central portion of each of the three oblique sides in plan view, and the cutout portions 10a, 10b, and 10c are covered from the outside. Plate springs 16 are mounted separately. Balls 14 are fixed to the center portions of the longitudinal directions of the leaf springs 16 respectively. When the balls 14 are subjected to an external force in a state before being engaged with the triangular tapered groove member 12, only the radius centering on the center of the transport shuttle 10 (substantially coincident with the center of the wafer W shown in FIG. 7) The direction is slightly moved.

After the transport shuttle 10 is moved to the position where the three balls 14 above the fine movement stage 85b are substantially opposed to the three triangular tapered groove members 12, each of the three balls 14 is individually lowered by lowering the transport shuttle 10 The three shuttle groove members 12 are engaged with each other to attach the transport shuttle 10 to the fine movement platform 85b. At the time of the mounting, even if the position of the transport shuttle 10 relative to the fine movement platform 85b is displaced from the desired position, the ball 14 receives an external force from the triangular tapered groove member 12 when it is engaged with the triangular tapered groove member 12, as described above. The direction moves in the radial direction. As a result, the three balls 14 are always engaged with the corresponding triangular tapered groove members 12 in the same state. On the other hand, the transfer shuttle 10 can be easily detached (disengaged) from the jog platform 85 by merely releasing the engagement of the ball 14 and the triangular tapered groove member 12 by moving the shuttle 10 upward. That is, in the present embodiment, the three types of balls 14 and the combination of the triangular tapered groove members 12 constitute a kinematic coupling, and by the kinematic coupling, the mounting state of the transport shuttle 10 with respect to the fine movement platform 85b can be set to always The same state. Therefore, regardless of how many times to remove, the transport shuttle 10 and the jog platform can be reproduced by simply attaching the transport shuttle 10 through the motion coupling (the set of the three sets of balls 14 and the triangular tapered groove member 12) to the fine movement platform 85b. The fixed positional relationship of 85b.

For example, as shown in FIG. 7, a circular recess having a diameter slightly larger than the wafer W is formed in the center of the upper surface of the transport shuttle 10, and an electrostatic chuck (not shown) is provided in the recess, and the electrostatic chuck is provided by the electrostatic chuck. The wafer W is electrostatically adsorbed and held. In the state in which the wafer W is held, the surface of the wafer W is substantially flush with the upper surface of the transport shuttle 10.

Next, a position measuring system for measuring the position information of the coarse fretting platform 85 will be described. The position measuring system includes a first measurement system 52 that measures position information of the transport shuttle 10 in a state where the transport shuttle 10 is attached to the fine movement platform 85b via the aforementioned motion coupling, and a second measurement of position information of the direct measurement micro-motion platform 85b. System 54 (see Figure 12).

First, the first measurement system 52 will be described. As shown in Fig. 7, grating blades 72a, 72b, and 72c are provided in the vicinity of each of the three sides of the transport shuttle 10 except for the three oblique sides. Each of the grating blades 72a, 72b, and 72c is formed with a radial direction centering on the center of the transport shuttle 10 (in the present embodiment, coincident with the center of the circular concave portion) and a direction orthogonal thereto. Each is set as a two-dimensional grid in the periodic direction. For example, a two-dimensional grid in which the Y-axis direction and the X-axis direction are the periodic directions is formed on the grating blade 72a. Further, on the grating blade 72b, a two-dimensional grid in which the center of the transport shuttle 10 is oriented at -120 degrees with respect to the Y-axis (hereinafter referred to as "α direction") and the direction orthogonal thereto is set as a periodic direction is formed. The grating blade 72c is formed with a two-dimensional grid in which the center of the transport shuttle 10 is +120 degrees with respect to the Y axis (hereinafter referred to as the β direction) and the direction orthogonal thereto is a periodic direction. As the two-dimensional grid, a reflection type diffraction grating having a pitch of, for example, 1 μm in each periodic direction is used.

As shown in Fig. 11(A), the lower surface of the metrology frame 94 (the surface on the -Z side) is fixed to three positions that can be individually opposed to each of the three grating blades 72a, 72b, and 72c. Heads 74a, 74b, 74c. Each of the three heads 74a, 74b, 74c is provided with a four-axis encoder head having a measuring axis indicated by four arrows in Fig. 11(B).

As will be described in more detail, the head portion 74a includes a first head that is housed in the same casing and has a X-axis direction and a Z-axis direction as measurement directions, and a Y-axis direction and a Z-axis direction. The second head of the direction. The first head (more precisely, the irradiation point of the measuring beam on the grating blade 72a of the first hair) and the second head (more precisely, the irradiation point of the measuring beam of the second hair on the grating blade 72a) ) is placed on the same line parallel to the X axis. The first head and the second head of the head portion 74a constitute a biaxial linear encoder that measures the positional information of the transport shuttle 10 in the X-axis direction and the Z-axis direction using the grating blade 72a, and measures the positions of the Y-axis direction and the Z-axis direction. Dual linear encoder for information.

Each of the remaining heads 74b and 74c is different in orientation from the weight measuring frame 94 (the measurement direction in the XY plane is different), but includes the first head and the second head in the same manner as the head 74a. The first head and the second head of the head portion 74b constitute a biaxial linear encoder that measures position information in the XY plane orthogonal to the α direction of the shuttle 10 and the Z-axis direction, respectively, using the grating blade 72b, and measurement A biaxial linear encoder for positional information in the alpha and z-axis directions. The first head and the second head of the head portion 74c constitute a biaxial linear encoder that measures the position information in the direction orthogonal to the β direction of the transport shuttle 10 and the Z-axis direction in the XY plane using the grating blade 72c, and the measurement. A biaxial linear encoder for positional information in the β and Z directions.

For each of the first head and the second head of the heads 74a, 74b, and 74c, an encoder head having the same configuration as that of the displacement measuring sensor head disclosed in the specification of U.S. Patent No. 7,561,280 can be used.

The encoder system is constituted by three sets of six double-axis encoders, that is, three heads 74a, 74b, and 74c that measure the position information of the shuttle 10 by using three grating blades 72a, 72b, and 72c, respectively. The first measurement system 52 (see FIG. 12) is configured by the encoder system. The position information measured by the first measuring system 52 is supplied to the main control device 50.

In the first measurement system 52, since the three heads 74a, 74b, and 74c each have four measurement degrees of freedom (measurement axes), it is possible to perform measurement of a total of 12 degrees of freedom. That is, in the three-dimensional space, the degree of freedom is at most 6, so that each of the six degrees of freedom directions is actually redundantly measured to obtain two pieces of position information.

Therefore, the main control device 50 sets the average of the two pieces of position information of each degree of freedom as the measurement result in each direction based on the position information measured by the first measurement system 52. Thereby, the position information of the transport shuttle 10 and the jog platform 85b can be accurately obtained in all directions of six degrees of freedom according to the averaging effect.

Next, the second measurement system 54 will be described. Regardless of whether or not the transport shuttle 10 is mounted on the jog platform 85b, the second measurement system 54 can measure the positional information of the 6-degree-of-freedom direction of the fine motion platform 85b. The second measuring system 54 may be constituted by an interferometer system that irradiates a light beam to a reflecting surface provided on a surface other than the side wall of the micro-motion stage 85b, receives the reflected light, and measures the 6-degree-of-freedom direction of the fine-motion stage 85b. Location information. The interferometers of the interferometer system can be suspended from the metrology frame 94 through a support member (not shown) or can be fixed to the platen 84. Since the second measuring system 54 is disposed in the exposure chamber 81 (in the vacuum space), there is no possibility that the measurement accuracy is lowered due to the fluctuation of the air. Further, in the present embodiment, when the transport shuttle 10 is not attached to the fine movement stage 85b (including when the exposure of the wafer is not performed), the second measurement system 54 is mainly used to maintain the position and posture of the fine movement stage 85b as needed. The state of the measurement is also lower than that of the first measurement system 52. The position information measured by the second measurement system 54 is supplied to the main control device 50 (refer to FIG. 12). Furthermore, it is not limited to the interferometer system, and the second measurement system can also be constructed by an encoder system or a combination of an encoder system and an interferometer system. In the latter case, the position information of the three degrees of freedom in the XY plane of the fine movement platform 85b can also be measured by the encoder system, and the position information of the remaining three degrees of freedom direction is measured by the interferometer system.

The measurement information of the first measurement system 52 and the second measurement system 54 is transmitted to the main control device 50, and the main control device 50 controls the coarse micro-motion platform based on the measurement information of at least one of the first measurement system 52 and the second measurement system 54. 85. Moreover, the main control device 50 also uses the measurement information of the first measurement system 52 for the control of the platform feedback deflector 40 of each of the plurality of multi-beam optical systems 20 of the electron beam irradiation device 92 of the exposure system 82, as needed. .

In Fig. 12, the input/output relationship of the main control unit 50 constituted mainly by the control system of the electron beam exposure apparatus 100 is shown in a block diagram. The main control device 50 includes a microcomputer or the like, and collectively controls the respective components of the configuration of the electron beam exposure device 100 including the respective portions shown in FIG.

The flow of processing the wafer in this embodiment is as follows.

First, a wafer before exposure (for convenience, referred to as wafer W ₁ ) coated with an electron beam resist is placed in a measurement chamber (not shown) for convenience (for convenience, It is referred to as the transport shuttle 10 ₁ ) and is adsorbed by the electrostatic chuck of the shuttle 10 ₁ . Then, the wafer W _{1 is} subjected to measurement in advance (rough) position measurement, flatness measurement, or the like with respect to the transport shuttle 10 ₁ by a measurement system (not shown) in the measurement chamber.

Next, the transport shuttle 10 ₁ holding the wafer W ₁ is carried into the exposure chamber 81 by a transport system (not shown) and transmitted through the load lock vacuum chamber provided in the chamber 80, and is exposed to the exposure chamber 81 by the exposure chamber 81. The transport system (not shown) is transported to a predetermined first standby position (for example, one of a plurality of storage racks of a transport shuttle storage (not shown)).

Next, in the exposure chamber 81, the transport shuttle replacement operation, that is, the replacement operation of the wafer integrated with the transport shuttle is performed as follows.

After the exposure of the wafer that has been exposed (for convenience, referred to as wafer W ₀ ) at the time of loading of the transport shuttle 10 ₁ , the transport system will hold the transported wafer W ₀ by the transport system ( For the sake of convenience, the transport shuttle 10 _{0 is} removed from the jog platform 85b and transported to a predetermined second standby position. The second standby position is the other one of the plurality of storage racks of the transport shuttle storage.

Further, since the fine movement table 85b to remove the bobbin ₁₀₀ before the transfer, based on the second measurement system 54 (see FIG. 12) of the measurement information by the main control unit 50 starts the jog position 85b of the platform 6 degrees of freedom, the posture of Feedback control, and secondly, based on the measurement information of the first measurement system 52 (refer to FIG. 12), the position of the 6-degree-of-freedom direction of the fine-motion stage 85b is before the position control of the fine-motion stage 85b integrated with the transport shuttle 10 _{1 is} started. The posture is maintained at a predetermined reference state.

Next, the transport shuttle 10 _{1 is} transported to the upper side of the coarse jog platform 85 by the transport system in the exposure chamber 81, and is attached to the fine motion stage 85b. At this time, as described above, since the position and posture of the six-degree-of-freedom direction of the fine movement stage 85b are maintained in the reference state, the electron beam irradiation apparatus is provided only by attaching the transport shuttle 10 ₁ to the fine movement stage 85b by the motion coupling. The positional relationship between 92 (electron beam optical system) and the transport shuttle 10 ₁ becomes a desired positional relationship. Then, consider the wafer W in advance of ₁ with respect to the conveyance shuttle results schematic position measurement of ₁₀₁ of the fine adjustment of the position of the fine movement table 85b, the order capable of mounting on the jog transfer shuttle station 85b of 10 ₁ of Each of the 100 exposure regions formed on the wafer W ₁ is formed correspondingly to at least one alignment mark of the scribe line (cut line), and the electron beam is surely irradiated from the electron beam optical system. Therefore, at least one of the reflected electron detecting devices 42 _x1 , 42 _x2 , 42 _y1 , and 42 _y2 detects reflected electrons from at least one of the alignment marks, thereby performing full-point alignment measurement of the wafer W ₁ and the full results of the alignment measurement point, the wafer W ₁ to the start of a plurality of exposure regions exposed using an electron beam irradiation device 92 of. For example, in the case of a complementary lithography, when a plurality of light beams (electron beams) emitted from the respective multi-beam optical systems 20 are used, a line and a gap pattern which are formed on the wafer W and whose X-axis direction is set as a periodic direction are formed. When the pattern is cut, the wafer W (the fine movement stage 85b) is scanned in the Y-axis direction, and the irradiation time (on, off) of each light beam is controlled.

And said full alignment measurement and exposure point performs positioned parallel to the second conveyance waiting position of the shuttle ₁₀₀ and unloaded from the exposure chamber 81 to transfer the measuring chamber. Detailed descriptions thereof are omitted.

During the exposure in the chamber 81, the wafer W is in _an exposed, the holding has been completed under a previously measured conveyance of the shuttle exposure target wafer 10 carried into the exposure chamber and in the first standby position. Then, at the time of exposure of the wafer W ₁ ends, the replacement operation integrally with the bobbin conveying wafer, hereinafter repeated in common with the above-described processing.

Here, the illumination control of the light beam in the actual complementary lithography will be described.

In the complementary lithography, assuming that all the light beams of the optical system columns 20 are simultaneously turned on, a plurality of light beams (beams for cutting patterns) MB on the L/S pattern LSP are as shown in FIG. 13(A). The positional relationship is illuminated. As can be seen from Fig. 13(A), any of the light beams MB is not affected by the Coulomb force (Coulomb interaction) with the other light beams MB, but is accurately irradiated onto the line pattern.

However, in the actual complementary lithography, there are cases where, for example, a part of the predetermined number of lines is continuous, and every other or every two places are cut at the same position in the Y-axis direction. In FIG. 13(B), as an example, a state in which the cut pattern MB' is formed at the same Y position on the line pattern of a predetermined number of lines is shown. In this case, the wafer W (the fine movement stage 85b) is scanned in the Y-axis direction so as to illuminate the light beam at a point where the cutting point on each line pattern of the object to be cut is located at the irradiation position of the light beam, and the irradiation time of each light beam is controlled. (on, off).

Here, as an example, as shown in FIG. 13(B), a flow of one of the cases in which the cut pattern MB' is formed at the same Y position on the line pattern of a predetermined number of lines will be described.

In this case, first, the wafer W (the fine movement stage 85b) is moved in the +Y direction indicated by the hollow arrow in FIG. 14(A) and the cutting point on the L/S pattern LSP on the wafer W is reached. When the position of the opening 28a of the first row of the aperture array 29 (beam shaping aperture blade 28) is shielded, the light beam MB passing through the opening 28a of the first column is irradiated onto the wafer. Thereby, on the L/S pattern LSP on the wafer W, every four lines are drawn from the line pattern of the first line on the +X side (the (1+5n)th line (n=0). A cut pattern is formed on the line pattern of 1, 2, ...).

Then, if the wafer W is further moved by a predetermined distance in the +Y direction indicated by the hollow arrow, as shown in FIG. 14(B), in the (1+5n)th row (n=0, 1, 2, .. .) the cutting point on the L/S pattern LSP formed with the cutting pattern MB' reaches the position of the opening 28a of the second column of the masking aperture array 29 (beam shaping aperture blade 28), and passes through the opening 28a of the second column The beam MB is illuminated onto the wafer. Thereby, on the L/S pattern LSP on the wafer W, every four lines are drawn from the line pattern of the second line (the (2+5n)th line (n=0, 1, 2, .. .) A cut pattern is formed on the line pattern).

Then, if the wafer W is further moved by a predetermined distance in the +Y direction indicated by the hollow arrow, as shown in FIG. 15(A), in the (1+5n)th and (2+5n)th rows (n) =0, 1, 2, ...) the cut point on the L/S pattern LSP formed with the cut pattern MB' reaches the position of the opening 28a of the third column of the shaded aperture array 29 (beam shaping aperture blade 28), And the light beam MB passing through the opening 28a of the third column is irradiated onto the wafer. Thereby, on the L/S pattern LSP on the wafer W, every four lines are drawn from the line pattern of the third line (the (3+5n)th line (n=0, 1, 2, .. .) A cut pattern is formed on the line pattern).

Then, if the wafer W is further moved by a predetermined distance in the +Y direction indicated by the hollow arrow, as shown in FIG. 15(B), the (1+5n)th row, the (2+5n)th row and the (3+5n) row (n=0, 1, 2, ...) The cut point on the L/S pattern LSP formed with the cut pattern MB' reaches the shaded aperture array 29 (beam shaped aperture blade 28) The position of the opening 28a of the four rows is irradiated onto the wafer by the light beam MB of the opening 28a of the fourth column. Thereby, on the L/S pattern LS on the wafer W, every four lines are drawn from the line pattern of the fourth line (the (4+5n)th line (n=0, 1, 2, .. .) A cut pattern is formed on the line pattern).

Then, if the wafer W is further moved by a predetermined distance in the +Y direction indicated by the hollow arrow, as shown in FIG. 16, the (1+5n)th row, the (2+5n)th row, and the (3+) 5n) row and (4+5n) row (n=0, 1, 2, ...) The cut point on the L/S pattern LSP formed with the cut pattern MB' reaches the mask aperture array 29 (beam shaping aperture The position of the opening 28a of the fifth row of the vane 28) and the light beam MB passing through the opening 28a of the fifth row are irradiated onto the wafer. Thereby, on the L/S pattern LSP on the wafer W, every four lines are drawn from the line pattern of the fifth line (the (5+5n)th column (n=0, 1, 2, .. .) A cut pattern is formed on the line pattern). Thereby, as shown in FIG. 13(B), the cut pattern MB' is formed at the same Y position on the line pattern of a predetermined number of lines.

Here, in any of FIG. 14(A), FIG. 14(B), FIG. 15(A), FIG. 15(B) and FIG. 16, the L/S pattern of the wafer W is at a pitch of 5p. The light beam is irradiated on every four lines of the LSP, so that any one of the light beams (cut pattern) MB is not affected by the Coulomb force (Coulomb interaction) between the adjacent light beams MB, causing the irradiation position to shift. Therefore, regarding the X-axis direction (the period of the line to be cut as the line pattern and the period of the gap pattern LSP in the complementary lithography), it is not necessary to correct the irradiation position shift.

As described above, in the present embodiment, the transport shuttle 10 for holding the wafer W, the coarse jog platform 85 for mounting the transport shuttle 10, the fine motion platform drive system 90, and the coarse motion platform drive system 86 are constructed. Maintain the platform as the target wafer W and move it.

As described above, according to the electron beam exposure apparatus 100 of the present embodiment, the main control unit 50 controls the transport shuttle 10 on which the wafer is held by the micro-motion stage drive system 90 and the coarse-motion stage drive system 86 during exposure of the wafer. The micro-motion stage 85b is scanned (moved) with respect to the electron beam irradiation device 92 (electron beam optical system) in the Y-axis direction. In parallel with this, the main control device 50 pairs the m (e.g., 100) optical system columns (multi-beam optical systems) 20 of the electron beam irradiation device 92 so that n of the beam forming aperture blades 28 are respectively passed (e.g., The illumination states (on state and off state) of the n light beams of the 5000) openings 28a vary for each opening 28a, and in particular, by individually controlling the number of radiations from the multi-beam optical system 20 to the wafer The irradiation position of the light beam in the Y-axis direction of the light-on state is adjusted at the time of irradiation of the light beams. Thereby, for example, each of, for example, 100 irradiation regions previously formed on the wafer by double patterning using an ArF immersion exposure apparatus, the X-axis direction can be set as a fine line and a gap in the periodic direction. The desired position on the desired line of the pattern forms a cut pattern (refer to FIG. 13(B)), and high-precision and high-processing exposure can be achieved. In the present embodiment, the arrangement of the plurality of openings 28a on the aperture array 29 is defined in such a manner that a plurality of light beams are formed by the plurality of openings 28a of the aperture arrays 29 that pass through the respective multi-beam optical systems ( The irradiation position of the light beam (corresponding to the first linear current) generated by the Coulomb force acting between the first linear current and the second linear current) is equivalent to the irradiation position on the wafer surface (equivalent to The above Δx) is equal to or less than the allowable value. In the present embodiment, the arrangement (arrangement) of the plurality of openings 28a on the mask aperture array 29 is qualitatively determined from the positional shift Δx generated by the interaction between the beams described above, and the mask aperture array 29 (more precisely, The distance between the openings 28a of the beam shaping diaphragm blades 28) is inversely proportional to the relationship (shown by the graph of Fig. 6(B)). In other words, the arrangement (arrangement) of the plurality of openings 28a on the shadow aperture array 29 is defined by considering the position information of the light beam in the conduction state generated by the Coulomb force acting between the light beams obtained by changing the distance between the light beams. .

Therefore, when the complementary lithography is performed and the line and gap patterns are cut using the electron beam exposure apparatus 100 of the present embodiment, even in the multi-beam optical system of the electron beam irradiation device 92, the aperture is blocked. When the light beam of any one of the plurality of openings 28a on the array 29 is turned on, in other words, regardless of the combination of the light beams in the on state, for example, 100 irradiation areas previously formed on the wafer can be formed. Each of the lines defining the X-axis direction as a fine line in the periodic direction forms a cut pattern with a desired X position on a desired line in the gap pattern.

Further, the arrangement of the openings 28a in the beam shaping diaphragm blades 28 described in the above embodiments is merely an example. For example, the arrangement of the openings 28a corresponding to the light beam MB shown in Fig. 17 (A) or Fig. 17 (B) may be employed. In Figs. 17(A) and 17(B), the state in which the light beam MB passing through the opening 28a of the beam forming aperture blade 28 is irradiated onto the L/S pattern is shown. When the arrangement of the openings 28a corresponding to the arrangement of the light beams MB of Fig. 17(A) is employed, the area of the arrangement area of the openings on the beam shaping diaphragm blades 28 can be made smaller than that of the above embodiment (see Fig. 5(A) and Figure 5 (B)). The arrangement of the light beams MB ₁ and MB _{2 in} Fig. 17 (B) is an example of the arrangement in the case where each of the openings 28 has a spare opening corresponding to the light beam MB ₂ . In this case, the two light beams MB ₁ and MB ₂ adjacent in the upper and lower directions in FIG. 17(B) are not actually irradiated at the same time.

The adjacent openings 28a (or spare openings) on the beam shaping diaphragm blades 28 corresponding to the arrangement of the light beams shown in Figs. 17(A) and 17(B) are spaced apart from each other in the X-axis direction of the opening 28a. When the length is set to p, it is at least 2.5p or more. Therefore, the position of the beam is not displaced by the Coulomb interaction with other beams.

Further, in the above embodiment, the position of the light beam in the X-axis direction from the design irradiation position is not corrected, or the control platform feedback deflector 40 is lowered. However, the positional shift can also be reduced in the following two variants.

≪Modification 1≫

In the exposure apparatus and the exposure method of this modification, instead of the beam shaping diaphragm blade 28, the X-axis direction of the opening 28a is separated from the both sides of the opening 28a in the X-axis direction as shown in Fig. 18(A). A beam shaping aperture blade having a pair of auxiliary openings 28b formed at the same distance p in length. The auxiliary opening 28b has an area such that the dose (the amount of electrons per unit area) of the light beam that passes through the auxiliary opening 28b and is irradiated onto the wafer (target) is applied to the wafer. The degree of induction by the electron beam resist is, for example, about 1/10 to 1/4. Further, the conduction and disconnection of the light beam passing through each of the auxiliary openings 28b are performed in the same manner as the light beam passing through the opening 28a, and the light beam is imparted to the light beam passing through the opening 28a by changing the operation ratio of the on and off. The Coulomb acts to control the X offset of the beam. That is, the Coulomb effect is actively corrected and used. In Fig. 18(B), the state in which all the openings 28a and the auxiliary openings 28b existing in the partial region of the beam shaping diaphragm blade 28 are simultaneously irradiated with the light beam from the L/S pattern formed on the wafer. As can be seen from Fig. 18(B), the irradiation position shift in the X-axis direction of the light beam irradiated onto the wafer through each opening 28a (referred to as a main beam for convenience) is irradiated through a pair of auxiliary openings 28b. Correcting to the coulomb interaction between each of the pair of beams (referred to as sub-beams for convenience) SB on the wafer and the main beam MB, thereby accurately illuminating each main beam MB to the line of the L/S pattern LSP On the pattern.

≪Modification 2≫

In the second modification, the beam shaping diaphragm blade 28B shown in the plan view of Fig. 19(A) is used. As shown in FIG. 19(B) in which the circle D of FIG. 19(A) is enlarged, the length of the X-axis direction is p and the length of the Y-axis direction is p/2 on the beam-forming aperture blade 28B. The two opening lines of the rectangular opening 128 which are arranged in the X-axis direction at a pitch 2p are formed by being spaced apart by p/2 in the Y-axis direction and shifted by p in the X-axis direction.

Here, in order to form the cut pattern shown in FIG. 20(A) on the L/S pattern formed on the wafer using the beam shaping diaphragm blade 28B, it is considered to irradiate the light beam corresponding to the cut pattern. In this case, as shown in FIG. 20(B), the repulsion acts by the Coulomb interaction between the light beams passing through the openings 128 adjacent in the X-axis direction. Therefore, the two beams shown in the upper row in Fig. 20(B) (through the beams corresponding to the openings 128 respectively) and the three beams shown in the lower row (through the beams corresponding to the openings 128 respectively) are predicted. The irradiation positions of the light beams at both ends are shifted toward the outer side in the X-axis direction.

In this case, when it is possible to specify that the irradiation position of the light beam is shifted to the portion of the opening 128 which is a problem, for example, as shown in FIG. 20(C), the transmission is predicted to be near the opening 128 of the irradiation position of the light beam. The opening 128 illuminates a virtual light beam called a temporary cut beam. Thereby, as shown in FIG. 20(C), for the two beams shown in the upper row and the beams at both ends of the lower row, a repulsive force acts between the beams passing through the openings on both sides in the X-axis direction. Preventing an offset of the illumination position with respect to the X-axis direction. Thus, the X-offset of the beam can be corrected by the Coulomb force (Coulomb interaction) between the temporary cut beam and the beam to be corrected for the X offset. In this case, it is also possible to set the temporary cutting beam in such a manner that the pattern unevenness is reduced. Moreover, by setting the temporary cutting beam, when the pattern unevenness is eliminated, the influence of the irradiation heat of the wafer is more direct, and the correction becomes easier.

Here, in the case of the second modification, it is conceivable to use an adjustment capability of the irradiation position shift of the light beam in the ON state in which the temporary cut beam is turned on in the X-axis direction, and to define the light beam in the ON state in the X-axis direction. The allowable value of the irradiation position shift and the arrangement of the plurality of openings 128 of the beam shaping diaphragm blade 28B.

Further, in the above-described embodiment, the electron beam is moved while the micro-motion stage 85b holding the wafer W through the transport shuttle 10 moves in the scanning direction (Y-axis direction) with respect to the electron beam irradiation device 92 (electron beam optical system). Although the scanning exposure of the wafer W has been described, when the electron beam irradiation device 92 (electron beam optical system) can be moved in a predetermined direction, for example, the Y-axis direction, the wafer can be stationary. In the state, the wafer W is scanned and exposed by the electron beam while moving the electron beam irradiation device (electron beam optical system) in the Y-axis direction. Alternatively, the wafer W may be scanned and exposed by the electron beam while moving the wafer W and the electron beam irradiation device in opposite directions.

Further, in the above-described embodiment, the electron beam optical system included in the electron beam irradiation device 92 is configured by the m optical system columns 20 constituted by the multi-beam optical system. However, the present invention is not limited thereto. The electron beam optical system can also be a single-column multi-beam optical system.

Further, as the multi-beam optical system of the above-described embodiment, in the method of turning on/off the respective light beams, a method of generating a plurality of electron beams through the mask aperture array having a plurality of openings may be employed, according to the drawing. The pattern causes the electron beams to be individually turned on/off to draw a pattern on the sample surface. Further, a configuration may be adopted in which a surface emission type electron beam source having a plurality of electron emission portions that emit a plurality of electron beams is used instead of the aperture array.

Further, in the above-described embodiment, the electron beam exposure apparatus of the type in which the wafer W is transported while being transported by the transport shuttle 10 has been described. However, the present invention is not limited thereto, and may be an ordinary type of electron beam exposure apparatus. That is, the wafer W is separately transported to the platform (or table) for exposure, while the platform (or the table) holding the wafer is moved in the scanning direction, and the electron beam irradiation device (electron beam optics) The system) irradiates the wafer W with a light beam for exposure. Even in the electron beam exposure apparatus, as long as the electron beam optical system including the multi-beam optical system is provided, it is preferable to use a plurality of openings of the beam shaping aperture blades formed on the image plane of the multi-beam optical system. A method of correcting the deformation (the displacement of the irradiation position of each beam on the illumination surface).

Further, in the above embodiment, the case where the fine movement stage 85b is movable in the six-degree-of-freedom direction with respect to the coarse movement stage 85a has been described. However, the present invention is not limited thereto, and the fine movement stage can be moved only in the XY plane. In this case, the first measurement system 52 and the second measurement system 54 that measure the position information of the jog platform can also measure the position information in the XY plane with respect to the direction of the three degrees of freedom.

Further, in the above embodiment, the case where the first measurement system 52 is configured by the encoder system has been described. However, the present invention is not limited thereto, and the first measurement system 52 may be configured by the interferometer system.

Further, in the above embodiment, the electron beam irradiation device 92 and the metrology frame 94 are integrally suspended from the top plate (top wall) of the vacuum chamber through the three hanging support mechanisms 95a, 95b, and 95c, but Not limited to this, the electron beam irradiation device 92 can also be supported by a cabinet type body. Further, in the above embodiment, the case where the entire exposure system 82 is housed in the vacuum chamber 80 has been described. However, the present invention is not limited thereto, and the electron beam irradiation device 92 in the exposure system 82 may be provided. A portion other than the lower end portion of the lens barrel 93 is exposed outside the vacuum chamber 80.

Further, in the above-described embodiment, the case where the target is a wafer for manufacturing a semiconductor element has been described. However, the electron beam exposure apparatus 100 of the present embodiment also forms a fine pattern on a glass substrate to manufacture a photomask. It can be preferably used. For example, it may be an exposure system for drawing a mask pattern on an angled glass blade or a silicon wafer, or an exposure system for manufacturing an organic EL, a thin film magnetic head, an imaging element (CCD, etc.), a micromachine, and a DNA wafer. Wait. Further, in the above-described embodiment, an electron beam exposure apparatus using an electron beam as a charged particle beam has been described. However, the above embodiment can be used as an exposure apparatus using an ion beam or the like as a charged particle beam for exposure.

Moreover, the exposure technique constituting the complementary lithography is not limited to the combination of the immersion exposure technique using an ArF light source and the charged particle beam exposure technique, and may be formed by, for example, a dry exposure technique using an ArF light source or other light source such as KrF. Line and gap pattern.

As shown in FIG. 21, an electronic component (micro component) such as a semiconductor element is manufactured by performing the steps of the function of the device, the design of the performance, the step of fabricating the wafer from the germanium material, and the lithography technique. A wafer processing step, a component assembly step (including a dicing process, a bonding process, and a packaging process), and an inspection step of forming an actual circuit or the like on the wafer. The wafer processing step includes: a lithography step (including a process of applying a resist (inductive material) on the wafer, exposing the wafer by the electron beam exposure device of the foregoing embodiment and an exposure method thereof (according to the design) The process of drawing the pattern of the pattern data and the process of developing the exposed wafer), the etching step of removing the exposed member except the portion where the resist remains, and removing the etching step by etching After the etching is completed, it becomes a resist removal step of useless resist removal, and the like. The wafer processing step may also be preceded by the lithography step, and further includes a pre-process (oxidation step, CVD step, electrode formation step, ion implantation step, etc.). In this case, in the lithography step, the element pattern is formed on the wafer by performing the exposure method using the electron beam exposure apparatus 100 of the above-described embodiment, so that high productivity can be produced with good productivity (good yield). The micro component of the body. In particular, in the lithography step (step of performing exposure), by performing the complementary lithography, and by performing the exposure method using the electron beam exposure apparatus 100 of the above embodiment, it is possible to manufacture a micro-component having a higher degree of integration. .

In addition, the disclosure of the international disclosure of the exposure apparatus and the like, and the disclosure of the US patent specification and the like cited in the above-mentioned embodiments are cited as part of the description of the present specification.

[Industrial availability]

As described above, the exposure apparatus, the exposure method, the lithography method, and the element manufacturing method of the present invention are suitable for the manufacture of microcomponents.

Claims (9)

 An exposure apparatus that irradiates a charged particle beam to expose a target, and includes an irradiation device having a beam shaping member having a plurality of openings arranged in a predetermined plane parallel to a surface of the target; An optical system that irradiates the plurality of openings to the target by the charged particle beam; and the plurality of openings are configured such that a position of the plurality of charged particle beams irradiated to the target is shifted to a tolerance or less In the arrangement, the arrangement of the plurality of openings is defined by information on the position of the charged particle beam generated by the Coulomb force acting between the charged particle beams, which is obtained by changing the distance between the charged particle beams.    The exposure apparatus according to claim 1, wherein the distance between the adjacent openings is defined as a distance corresponding to a distance of two or more lines between the line formed on the target and the line portion of the gap pattern, respectively, through the plurality of openings The charged particle beam cuts the line between the line and the gap pattern.    The exposure apparatus according to claim 2, further comprising: a platform that holds the target and moves; and a control device that controls relative movement of the platform and the optical system, and adjusts the charged particle beam that is irradiated to the target And the arrangement of the plurality of openings is defined in consideration of an adjustment capability of the control device, and the control device adjusts a position of the charged particle beam irradiated to the target in order to cut the line portion.    An exposure apparatus that irradiates a charged particle beam to expose a target and includes an irradiation device having a beam shaping member having a plurality of openings arranged on a surface of the target; and an optical system The charged particles are irradiated to the target by the plurality of openings, and the optical system is capable of individually setting the charged particle beam to the conductive state of the target by the charged particle beam passing through the plurality of openings. And a state in which the charged particle beam is not irradiated to the target, and the distance between the adjacent openings is defined as a distance corresponding to a distance of two or more lines between the line formed on the target and the line portion of the gap pattern. The beam shaping member further has a plurality of auxiliary openings disposed adjacent to each of the plurality of openings through which the charged particle beam for cutting the line portion passes, and is not used for the aforementioned line The aforementioned charged particle beam is cut by the portion, and the control device is controlled by the aforementioned auxiliary The conducting state and the off state of the charged particle beam is adjusted to the mouth of the line portion of the cutting position of the charged particle beam irradiation becomes the conductive state of the.    The exposure apparatus according to claim 4, wherein in the beam shaping member, the auxiliary opening is disposed on one side and the other side of the periodic direction of the line and the gap pattern with respect to each of the plurality of openings, the control The apparatus adjusts the cut-off of the line portion by selectively turning the charged particle beam into an on state by one of the auxiliary openings located on one side and the other side of the opening in the periodic direction. The irradiation position of the charged particle beam in the on state described above.    The exposure apparatus according to any one of claims 1 to 5, wherein the control means controls the irradiation timing of the charged particle beam while driving the platform in a direction crossing the periodic direction in the predetermined surface. Further, the irradiation position of the charged particle beam used for cutting the line portion on the line portion is adjusted.    A lithography method comprising: exposing a target by an exposure device to form a line and a gap pattern on the target; and constituting the line and gap pattern using the exposure device according to any one of claims 1 to 6. The cut of the line pattern.    The lithography method according to claim 7, wherein in the cutting of the line pattern, a predetermined number of the charged particle beams for cutting the line pattern as the object to be cut, and the predetermined number are passed The dummy charged particle beam provided in the opening of the beam shaping member close to the opening through which the charged particle beam passes is collectively turned on, and a predetermined number of the charged particle beam is adjusted to be irradiated on the target. .    A component manufacturing method comprising a lithography step, and in the lithography step, exposing a target by a lithography method as claimed in claim 7 or 8.