JP2016207755A - Exposure system and exchange method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an exposure system enhancing the throughput.SOLUTION: An exposure system 1000 includes a measurement chamber 300performing preliminary measurement for a wafer before exposure held on a holding member, a plurality of vacuum chambers 300, 300, each having an exposure chamber performing exposure for the wafer on the holding member by using an electron beam optical system, formed internally, and a shuttle transfer system for transferring the wafer for which measurement has ended, and the wafer for which exposure has ended, integrally with the holding member, between the measurement chamber and each load lock chamber of the plurality of vacuum chambers, while moving in the transfer space SP.SELECTED DRAWING: Figure 2

Description

  The present invention relates to an exposure system and a replacement method, and more particularly to an exposure system for exposing a target coated with a sensitive agent with a charged particle beam from a charged particle beam optical system, and a table in a vacuum chamber provided with a load lock chamber. The present invention relates to an exchange method for exchanging a target mounted thereon.

In an exposure apparatus (hereinafter referred to as an ultraviolet light exposure apparatus) that is used in a lithography process for manufacturing electronic devices (microdevices) such as semiconductor elements and uses ultraviolet light from the far ultraviolet region to the vacuum ultraviolet region as an exposure beam. In order to increase the resolution, the exposure wavelength has been shortened, the illumination conditions have been optimized, and the immersion method has been applied to further increase the numerical aperture of the projection optical system.
Also, recently, in order to form a circuit pattern with a finer pitch than the resolution limit of an ultraviolet light exposure apparatus, the ultraviolet light exposure apparatus is used on the wafer at a pitch about this resolution limit and the line width is pitch. After forming a line and space pattern (hereinafter referred to as an L / S pattern) different from 1/2 of the above, an L / S pattern having a line width of 1/2 of the pitch using the L / S pattern There has been proposed a double patterning method for forming.
However, with the double patterning method alone, it is difficult to form a pattern including a non-periodic portion finer than the resolution limit of an ultraviolet light exposure apparatus. It has been proposed to use an apparatus.

  This electron beam exposure apparatus forms a large number of circular spots smaller than the resolution limit of an ultraviolet light exposure apparatus with an electron beam, and relatively scans the circular spots of the large number of electron beams and the wafer, thereby aperiodic. It is an apparatus that performs exposure of an important part (see, for example, Patent Document 1).

  However, if the entire pattern including the non-periodic portion is exposed using the electron beam exposure apparatus, the exposure time (drawing time) becomes longer and the throughput (the number of wafers processed per unit time) is increased. Decreases.

US Pat. No. 7,173,263

  According to the first aspect of the present invention, an exposure system that exposes a target coated with a sensitive agent with a charged particle beam, the measurement chamber pre-measuring the target held by the first holding member before exposure. A second chamber in which an exposure chamber for exposing the target held by a second holding member different from the first holding member with the charged particle beam is formed, and the pre-measurement The first holding member that holds the target that has been completed is transferred from the first chamber into the second chamber via the load lock chamber, and then the target that has been subjected to the exposure is held from the vacuum chamber. An exposure system is provided that includes a transfer system that transfers the second holding member via the load lock chamber.

  Here, the transfer system includes both a transfer system arranged outside the vacuum chamber and the load lock chamber and a transfer system arranged in the vacuum chamber.

  According to the second aspect of the present invention, there is provided an exchange method for exchanging a target mounted on a table in a vacuum chamber provided with a load lock chamber, the first holding member holding the target before exposure. Carrying in the load lock chamber, closing the atmosphere side gate valve of the load lock chamber, evacuating the load lock chamber, and after the load lock chamber is in a predetermined vacuum state, The vacuum side gate valve of the lock chamber is opened, the first holding member holding the target is carried into a predetermined position in the vacuum chamber, and the first holding member is held after being carried into the predetermined position. The holding member is moved downward or upward by a predetermined distance to stand by at the first standby position, and the second holding member that holds the exposed target is placed on the tape. The first holding member and the second holding member are moved upward or downward by a predetermined distance to position the second holding member to the second standby position and the first holding member. Positioning the first holding member to the predetermined position; loading the first holding member at the predetermined position onto the table; starting exposure of the target of the first holding member; and starting the exposure. The second holding member waiting back and forth at the second standby position is positioned at the predetermined position, the second holding member at the predetermined position is carried into the load lock chamber, and the load lock is Closing the vacuum side gate valve of the chamber, opening the atmosphere side gate valve of the load lock chamber, and carrying the second holding member out of the load lock chamber. No exchange method, is provided.

It is a perspective view which shows the exposure system which concerns on one Embodiment with a resist coating and developing apparatus. 2A is a perspective view showing an exposure system according to an embodiment together with a resist coating / developing apparatus when viewed from an angle different from FIG. 1, and FIG. 2B is a perspective view of FIG. 1 is a perspective view showing an exposure system according to an embodiment together with a resist coating / developing apparatus as viewed from an angle different from FIG. It is a top view which shows the exposure system which concerns on one Embodiment with a resist coating and developing apparatus. It is a perspective view which shows the part which removed the 1st control rack, the flame | frame, and the 2nd control rack among exposure systems. It is a figure which shows schematically the load lock chamber with which a vacuum chamber is provided with the exposure unit accommodated in the exposure chamber inside the vacuum chamber. It is a perspective view which shows an exposure unit. It is a perspective view which shows the state by which the wafer shuttle was mounted | worn to the coarse / fine movement stage mounted on the surface plate. It is a perspective view which shows the coarse / fine movement stage of FIG. 7 from which the wafer shuttle was removed from the fine movement stage. It is a figure which expands and shows the coarse / fine movement stage mounted on the surface plate. It is a figure which shows the state which removed the fine movement stage and the magnetic shielding member from FIG. It is a figure for demonstrating the structure of a self-weight-cascel apparatus. FIGS. 12A and 12B are views (No. 1 and No. 2) for explaining the configuration of the first measurement system. 13A is a diagram for explaining the configuration of each part in the measurement chamber, and FIG. 13B is a diagram for explaining the movable range in the vertical direction of the measurement table in FIG. 13A. is there. It is a block diagram which shows the structure of the control system of an exposure system. It is a block diagram which shows the input / output relationship of the measurement control apparatus which comprises the control system of FIG. It is a block diagram which shows the input / output relationship of the exposure control apparatus which comprises the control system of FIG. FIG. 17A is a flowchart for explaining an example of the preparatory work performed in the measurement chamber 60, and FIG. 17B is a diagram for explaining the unloading operation of the exposed wafer in the measurement chamber 60. It is a flowchart of. It is FIG. (1) for demonstrating the exchange operation | movement of a wafer integral with a wafer shuttle. FIG. 10 is a diagram (No. 2) for explaining the wafer replacement operation integrally with the wafer shuttle. FIG. 10 is a third diagram for explaining the wafer replacement operation integrated with the wafer shuttle; FIG. 11 is a diagram (No. 4) for explaining the wafer replacement operation integrally with the wafer shuttle. FIG. 11 is a diagram (No. 5) for explaining the wafer replacement operation integrally with the wafer shuttle. FIG. 6 is a diagram (No. 6) for explaining the wafer replacement operation integrally with the wafer shuttle. FIG. 10 is a view (No. 7) for explaining the wafer replacement operation integrally with the wafer shuttle. FIG. 10 is a view (No. 8) for explaining the wafer exchange operation integrally with the wafer shuttle. FIG. 10 is a diagram (No. 9) for explaining the wafer replacement operation integrally with the wafer shuttle. It is FIG. (10) for demonstrating the replacement | exchange operation | movement of the wafer integral with a wafer shuttle.

  Hereinafter, an embodiment will be described with reference to FIGS. 1 to 2B, an exposure system 1000 according to an embodiment is seen from different directions together with a resist coating / developing apparatus (coater / developer (hereinafter abbreviated as C / D)) 9000. Each is shown in the figure. FIG. 3 shows the exposure system 1000 together with the C / D 9000 in a plan view.

  In this embodiment, a configuration using an electron beam will be described as an example of a charged particle beam. However, the charged particle beam is not limited to an electron beam, and a beam using charged particles such as an ion beam may be used.

  In the present embodiment, since a plurality of electron beam optical systems are provided as will be described later, a plane that takes the Z axis parallel to the optical axis of each electron beam optical system and is perpendicular to the Z axis (this embodiment) In the following description, the Y axis and the X axis that are orthogonal to each other are taken in the plane parallel to the floor surface F).

As shown in FIGS. 1 to 3, the exposure system 1000 is a rectangular parallelepiped first arranged at a predetermined interval on the + X side facing a rectangular parallelepiped C / D 9000 installed on the floor surface F. The control rack 200, a plurality of, for example, six chambers 300 _{1 to} 300 ₆ disposed on the + Y side of the C / D 9000 and the first control rack 200, and four spaces in which _six chambers 300 _{1 to} 300 ₆ are disposed A frame 400 having four legs located at a corner and a second control rack 500 arranged on the frame 400 are provided.

The six chambers 300 _{1 to} 300 ₆ are divided into two rows composed of _three chambers 300 _{1 to} 300 ₃ and three chambers 300 _{4 to} 300 ₆ .
The three chambers 300 _{1 to} 300 ₃ are arranged at a predetermined interval in the X-axis direction (a direction in which a chamber 300 ₁ and C / D 9000 described later are adjacent), and the three chambers 300 _{1 to} 300 ₃ are It is arranged at a predetermined distance in the X-axis direction (described later chamber 300 ₄ and the direction in which the first control rack 200 are adjacent) to each other.

The chambers 300 _{1 to} 300 ₃ shown in FIG. 1 are included in one row, and the chambers 300 _{4 to} 300 ₆ shown in FIG. 2A are included in the other row. As shown in the plan view of FIG. 3, the chambers 300 _{1 to} 300 ₃ in _one row are arranged side by side in the Y-axis direction adjacent to the + Y side of the C / D 9000. The other rows of chambers 300 _{4 to} 300 ₆ are arranged adjacent to the + Y side of the first control rack 200 in the Y-axis direction. In the present embodiment, of the exposure system 1000, first control rack 200, as can be seen from FIGS. 4 and 3 shows a partial removal of the frame 400 and the second control rack 500, the chamber 300 ₁ and 300 ₄ faces , chamber 300 ₂ 300 ₅ faces, the chamber 300 ₃ and the chamber 300 ₆ faces.

In other words, among the _six chambers 300 _{1 to} 300 ₆ , the chamber 300 ₁ is arranged adjacent to the C / D 9000 in the direction in which the C / D 9000 extends.
Of the _six chambers 300 _{1 to} 300 ₆ , the chamber 300 ₄ is in a direction intersecting the direction in which the chamber 300 ₁ and the C / D 9000 are adjacent to each other, and at a predetermined interval from the chamber 300 ₁ . Be placed. That is, the chamber 300 ₄ and the chamber 300 _1, disposed opposite.

Then, the first control rack 200 is arranged in the chamber 300 ₄ and C / D9000 at a predetermined distance. That is, the chamber 300 _4, to the first control rack 200 is disposed adjacent to the direction in which the first control rack 200 extends, C / D9000 is disposed opposite to the first control rack 200.

As the first control rack 200, a rectangular parallelepiped having the same length and the same height as the C / D 9000 is used. Moreover, since the height of the _six chambers 300 _{1 to} 300 ₆ is configured to be lower than the height of the first control rack 200 and the C / D 9000, an empty space exists above the _six chambers 300 _{1 to} 300 ₆ . Therefore, in the present embodiment, the second control rack 500 is arranged via the frame 400 in order to effectively use this empty space. That is, the frame 400 has a rectangular top plate portion and four leg portions of the same length that support the top plate portion at its four corner portions, and supports the second control rack 500 from below. ing. The upper surface of the second control rack 500 and the upper surfaces of the first control rack 200 and the C / D 9000 are substantially the same surface.

  With this layout, in this embodiment, a rectangular parallelepiped space can be created in the clean room, and it is possible to avoid the occurrence of unusable space in the clean room and to improve the efficiency of use of the space. It is.

  To the first control rack 200, wiring and piping from the utility supply source of the clean room subfab that contains the production support equipment and utility facilities below the floor F are connected from below through the floor F. (Refer to the three black arrows pointing upward in FIG. 2A). The first control rack 200 is connected to the second control rack 500 via wiring and piping. The wiring and piping supply utilities (utility, utility) such as electric power, and the utilities include air, cooling water, vacuum exhaust and the like in addition to electric power.

Inside the first control rack 200, there are various types such as a control system unit directly related to an electron beam exposure apparatus such as a high voltage power supply and an amplifier, a stage control system described later, and a measurement control board described later. The unit is stored. The first control rack 200 temporarily relays the wiring and piping, and distributes the utility supplied from the utility supply source of the clean room subfab via the wiring and piping (supply member) to the six chambers 300 _{1 to} 300 _6. (Refer to the white arrow in FIG. 2 (A)), it is supplied to the second control rack 500. In addition, you may arrange | position the temperature controller of a cooling water inside the 1st control rack 200 as needed.

Similar to the first control rack, various units are accommodated in the second control rack 500 and connected to each of the _six chambers 300 _{1 to} 300 ₆ through wiring and piping. The second control rack 500 supplies the utility supplied from the first control rack 200 from above to each of the _six chambers 300 _{1 to} 300 ₆ (three downward black lines in FIG. 2A). See arrow). That is, the second control rack 500 functions as an interface between the first control rack 200 and the six chambers 300 _{1 to} 300 ₆ . The merits of supplying the utility from above to each of the _six chambers 300 _{1 to} 300 ₆ will be described later.

Six chambers ₃₀₀ 1 to 300 ₆ out of, the chamber 300 ₁ disposed adjacent to the C / D9000 has a rectangular parallelepiped shape (see FIG. 4). Chamber 300 ₁ is connected by line to the C / D9000. The inner space of the chamber _3001, the wafer predetermined measurement with respect to (C / D9000 wafer electron beam resist is applied by), and unloading of the load and exposed wafer of the wafer before exposure to wafer shuttle to be described later is the target Loading is performed in a measurement chamber (measurement cell) 60 (not shown in FIGS. 1 to 2B, etc., see FIG. 13A).

Of the remaining five chambers 300 _{2 to} 300 ₆ , the chambers 300 _{4 to} 300 ₆ have an L-shape when viewed from the + Y side, and the chambers 300 ₂ and 300 ₃ have a symmetrical shape to these. ing. The internal space of each of the five chambers 300 _{2 to} 300 ₆ is an exposure chamber (exposure cell) 301 _i (i = 2 to 6) in which exposure of the wafer with an electron beam is performed (not shown in FIGS. 1 to 3 and the like). 5). The exposure chamber 301 _i is maintained in a high vacuum state. That is, as the five chambers 300 _{i in} which the exposure chambers 301 _i are formed, vacuum chambers having a structure with sufficient resistance so as not to be crushed or deformed by the action of atmospheric pressure are used. . Hereinafter, the chamber ₃₀₀ 2-300 ₆ denoted both vacuum chamber ₃₀₀ 2-300 _6.

The internal space of the chamber 300 ₁ has extremely measuring chamber as described above, there is no need to vacuum atmosphere as the interior space of the chamber ₃₀₀ 2-300 _6. Therefore, as the chamber 300 _1, it is possible to use a weak chamber strength than the vacuum chamber. Further, by controlling the pressure of the inner space of the inner space and C / D9000 chamber 300 ₁ to be higher than pressure of the clean room, a gas in a clean room (air) entering the chamber 300 ₁ and C / D9000 Can be suppressed. Each of the internal space of the first control rack 200 and the internal space of the second control rack 500 may be set to the same pressure as the clean room (atmospheric pressure space) or a pressure higher than the pressure of the clean dream.

As shown in FIG. 5, a pair of load lock chambers 302 is attached to the front surface of the vacuum chamber 300 _i . FIG. 5 shows the same orientation as the vacuum chambers 300 ₃ , 300 ₂ , 300 ₁ , but the vacuum chambers 300 ₆ , 300 ₅ are symmetrical to those shown in FIG. It has the same configuration.

Each load lock chamber 302 is fixed to a main body 302a in which a load lock chamber 304 (see, for example, FIG. 19) is formed, and to the front side (atmosphere side) and back side (vacuum side) of the main body 302a. A pair of gate portions 302b and 302c is included. The pair of gate portions 302b and 302c is provided with a gate valve that includes a shutter that opens and closes an opening formed on the front surface side and the back surface side of the main body portion 302a and a drive mechanism that slides the shutter in the vertical direction. . Hereinafter, gate valves 302b and 302c are denoted by the same reference numerals as those of the gate portion. Opening and closing of the gate valves 302b and 302c (that is, opening and closing of the shutter by the driving mechanism) is controlled by the exposure control device 380 _i (see FIGS. 14 and 16).

A vacuum pipe connected to a vacuum source such as a vacuum pump via an opening / closing valve 305 (see FIG. 16) is connected to the load lock chamber 302. By opening the opening / closing valve 305, the inside of the load lock chamber 304 is connected. Is evacuated as necessary. The opening / closing of the on-off valve 305 is also controlled by the exposure control device 380 _i . Each load lock chamber 302 may be provided with a vacuum pump.

In the vacuum chamber 300 _i inside the exposure chamber 301 _i, a pair of the exposure unit 310 shown in FIG. 5, for example, a horizontal multi-joint consists of a robot exposure chamber transport system 312 (not shown in FIG. 5, see FIG. 16) Contained. Although not shown in FIG. 5 in the exposure chamber 301 _i , as shown in FIG. 18 and the like, for example, a shuttle that has two upper and lower storage shelves separated by a first distance and can move up and down is provided. A carrier 306 is provided. The vertical movement of the shuttle carrier 306 is controlled by the exposure control device 380 _i (see FIG. 16).

The exposure unit 310 includes a stage device 320 and an electron beam irradiation device 330 having an electron beam optical system, as shown in a simplified manner in FIG.
The stage device 320 includes a coarse / fine movement stage on which a wafer shuttle that can hold and move a wafer is detachably mounted. The electron beam irradiation device 330 is held by a wafer shuttle mounted on the coarse / fine movement stage. The wafer is exposed by irradiating it with an electron beam.

Here, the wafer shuttle is a holding member (or table) that holds the wafer by electrostatic chucking, as will be described in detail later. However, the holding member is transported while the holding member holds the wafer, and This holding member is referred to as a wafer shuttle because it repeatedly reciprocates like the shuttle bus (or space shuttle) with each of the exposure chambers 301 _{2 to} 30 ₁₆ starting from the measurement chamber 60.

  As shown in FIG. 6, the stage device 320 measures the position information of the surface plate 321, the coarse / fine movement stage 322 that moves on the surface plate 321, the drive system that drives the coarse / fine movement stage 322, and the coarse / fine movement stage. A position measuring system. Details of the configuration and the like of the stage device 320 will be described later.

As shown in FIG. 6, the electron beam irradiation apparatus 330 includes a cylindrical lens barrel 331 and an electron beam optical system inside the lens barrel 331. The electron beam irradiation device 330 (lens barrel 331) is supported from below by a metrology frame 340 formed of an annular plate member having three convex portions formed on the outer peripheral portion at intervals of a central angle of 120 degrees. More specifically, the lowermost end portion of the lens barrel 331 is a small-diameter portion whose diameter is smaller than that of the upper portion thereof, and a boundary portion between the small-diameter portion and the upper portion is a stepped portion. Yes. Then, with the small diameter portion inserted into the circular opening of the metrology frame 340 and the bottom surface of the stepped portion in contact with the top surface of the metrology frame 340, the lens barrel 331 is moved from below by the metrology frame 340. It is supported. The metrology frame 340 is a vacuum that divides the exposure chamber 301 _i through three suspension support mechanisms 350a, 350b, and 350c (flexible connecting members) each having a lower end connected to each of the three convex portions described above. It is supported in a state suspended from the top plate of the chamber 300 _i (ceiling wall). That is, in this way, the electron beam irradiation apparatus 330 is supported by being suspended at three points with respect to the vacuum chamber 300 _i .

The three suspension support mechanisms 350a, 350b, 350c are, as representatively shown for the suspension support mechanism 350a in FIG. 6, a passive vibration isolation pad 351 provided at each upper end, and a vibration isolation pad. (Anti-Vibration Unit) 351 has a wire 352 made of a steel material having one end connected to the lower end of 351 and the other end connected to a metrology frame 340. The anti-vibration pad 351 is fixed to the top plate of the vacuum chamber 300 _i and includes an air damper or a coil spring, respectively.

In the present embodiment, among vibrations such as floor vibration transmitted from the outside to the vacuum chamber 300 _i , most of vibration components in the Z-axis direction parallel to the optical axis of the electron optical system are absorbed by the vibration isolation pad 351. Therefore, high vibration isolation performance can be obtained in a direction parallel to the optical axis of the electron optical system. Further, the natural frequency of the suspension support mechanism is lower in the direction perpendicular to the optical axis than in the direction parallel to the optical axis of the electron optical system. Three suspension support mechanisms 350a, 350b, the floor 350c is in a direction perpendicular to the optical axis to oscillate like a pendulum, which is transmitted from the outside to the vibration isolation performance (vacuum chamber 300 _i in the direction perpendicular to the optical axis The length of the three suspension support mechanisms 350a, 350b, 350c (the length of the wire 352) is sufficiently long so that the vibration (such as vibration) is sufficiently high). It is set. With this structure, high vibration isolation performance can be obtained and the mechanical unit can be significantly reduced in weight. However, the relative position between the electron beam irradiation device 330 and the vacuum chamber 300 _i may change at a relatively low frequency. Therefore, in order to maintain the relative positions of the electron beam irradiation apparatus 330 and the vacuum chamber 300 _i to a predetermined state, the positioning device 353 of the non-contact type (not shown in FIG. 5, see FIG. 16) is provided. The positioning device 353 can be configured to include a six-axis acceleration sensor and a six-axis actuator, as disclosed in, for example, International Publication No. 2007/077920. The positioning device 353 is controlled by the exposure control device 380 _i (see FIG. 16). As a result, the relative positions of the electron beam irradiation device 330 in the X-axis direction, the Y-axis direction, and the Z-axis direction with respect to the vacuum chamber 300 _i and the relative rotation angles around the X-axis, Y-axis, and Z-axis are constant ( (Predetermined state).

  In the present embodiment, the electron beam irradiation device 330 includes an electron beam optical system including m (m is 100, for example) optical system columns arranged in a predetermined positional relationship within the lens barrel 331. Each optical system column is composed of a multi-beam optical system that can irradiate n beams (n is, for example, 4000) that can be individually turned on and off and can be deflected. As the multi-beam optical system, for example, an optical system having the same configuration as the optical system disclosed in Japanese Patent Application Laid-Open No. 2011-258842, International Publication No. 2007/017255, or the like can be used. When all 4000 multi-beams are on, for example, 4000 points set at equal intervals in a rectangular region (exposure region) of 100 μm × 20 nm are simultaneously smaller than the resolution limit of the ultraviolet light exposure apparatus (for example, 20 nm in diameter). ) Of the electron beam circular spot.

The 100 optical system columns correspond to, for example, approximately 100 shot areas formed on a 300 mm wafer (or formed from a shot map in accordance with a shot map) at a ratio of 1: 1. In this embodiment, each of the 100 optical system columns can be turned on / off, and a large number (n = 4000) of a circular spot of a 20 nm diameter electron beam that can be deflected is exposed in a rectangular shape (for example, 100 μm × 20 nm). 100 shot areas on the wafer are exposed by arranging the pattern within the area and turning on / off while deflecting the circular spots of the multiple electron beams while scanning the wafer with respect to the exposure area. Is formed. Therefore, in the case of a 300 mm wafer, it is sufficient that the movement stroke of the wafer at the time of exposure is several tens of mm, for example, 50 mm even with some margin. Each optical system column includes a reflected electron detection system (not shown) that detects reflected electrons in the same manner as a normal electron beam optical system. The electron beam irradiation device 330 is controlled by an exposure control device 380 _i (see FIG. 16).

  Next, the configuration and the like of the stage device 320 will be described. FIG. 7 is a perspective view showing a state where a wafer shuttle (hereinafter abbreviated as shuttle) 10 is mounted on the coarse / fine movement stage 322 of the stage device 320. FIG. 8 is a perspective view of the coarse / fine movement stage 322 shown in FIG. 7 in a state in which the shuttle 10 is detached (removed).

The surface plate 321 provided in the stage device 320 is actually installed on the bottom wall of the vacuum chamber 300 _i that partitions the exposure chamber 301 _i . As shown in FIGS. 7 and 8, the coarse / fine movement stage 322 includes a pair of quadrangular columnar portions that are arranged at predetermined intervals in the Y-axis direction and extend in the X-axis direction. A coarse movement stage 322a that can move in the axial direction with a predetermined stroke, for example 50 mm, and a coarse movement stage 322a that can move in the Y axis direction with a predetermined stroke, for example, 50 mm, and the remaining five degrees of freedom, that is, the X axis Direction, Z-axis direction, rotation direction around the X-axis (θx direction), rotation direction around the Y-axis (θy direction), and rotation direction around the Z-axis (θz direction) with a shorter stroke than the X-axis direction A fine movement stage 322b. Although not shown, the pair of square columnar portions of the coarse movement stage 322a are actually connected by a connecting member (not shown) in a state that does not prevent the movement of the fine movement stage 322b in the Y-axis direction, It is integrated.

  The coarse movement stage 322a is driven with a predetermined stroke (for example, 50 mm) in the X-axis direction by a coarse movement stage drive system 323 (see FIG. 16) (see a long arrow in the X-axis direction in FIG. 10). In this embodiment, the coarse movement stage drive system 323 is configured by a uniaxial drive mechanism that does not cause magnetic flux leakage, for example, a feed screw mechanism using a ball screw. The coarse movement stage drive system 323 is disposed between one square columnar portion and the surface plate 321 of the pair of square columnar portions of the coarse movement stage. For example, a screw shaft is attached to the surface plate 321 and a ball (nut) is attached to one quadrangular columnar portion. In addition, the structure which attaches a ball | bowl to the surface plate 321 and attaches a screw shaft to one square pillar-shaped part may be sufficient.

In addition, of the pair of quadrangular columnar portions of the coarse movement stage, the other quadrangular columnar portion is configured to move along a guide surface (not shown) provided on the surface plate 321.
The screw shaft of the ball screw is driven to rotate by a stepping motor. Alternatively, the coarse movement stage drive system 323 may be configured by a uniaxial drive mechanism including an ultrasonic motor as a drive source. In any case, the magnetic field fluctuation caused by the magnetic flux leakage does not affect the positioning of the electron beam. The coarse movement stage drive system 323 is controlled by the exposure control device 380 _i (see FIG. 16).

  As shown in the enlarged perspective view of FIG. 9, the fine movement stage 322 b is formed of a member having an XZ cross-sectional rectangular frame shape penetrating in the Y-axis direction. The weight cancellation device 324 allows the fine movement stage 322 b on the surface plate 321 in the XY plane. It is supported movably. A plurality of reinforcing ribs are provided on the outer surface of the side wall of fine movement stage 322b. The configuration of the weight cancellation device 324 will be described later.

  Inside the hollow portion of fine movement stage 322b, there are provided a yoke 325a having an XZ cross section in a rectangular frame shape and extending in the Y-axis direction, and a pair of magnet units 325b fixed to the upper and lower opposing surfaces of yoke 325a. A mover 325 of a motor that drives fine movement stage 322b is configured by 325a and a pair of magnet units 325b.

Corresponding to the mover 325, FIG. 10 shows a state in which a magnetic shield member (to be described later) indicated by the fine movement stage 322b and the reference numeral 328 is removed from the pair of rectangular column parts of the coarse movement stage 322a from FIG. As shown in FIG. 2, a stator 326 made of a coil unit is installed. The stator 326 and the above-described mover 325 can move the mover 325 with respect to the stator 326 with a predetermined stroke, for example, 50 mm in the Y-axis direction, as indicated by arrows in each direction in FIG. In addition, a closed magnetic field type and moving magnet type motor 327 that can be finely driven in the X axis direction, the Z axis direction, the θx direction, the θy direction, and the θz direction is configured. In the present embodiment, a fine movement stage drive system that drives the fine movement stage in the direction of six degrees of freedom by the motor 327 is configured. Hereinafter, the fine movement stage drive system is referred to as a fine movement stage drive system 327 using the same reference numerals as those of the motor. Fine movement stage drive system 327 is controlled by exposure control device 380 _i (see FIG. 16).

  Between the pair of quadrangular prism portions of the coarse movement stage 322a, as shown in FIG. 7 and FIG. 8, for example, the XZ cross-section reverse U in a state of covering the upper surface of the motor 327 and both side surfaces in the X-axis direction. A letter-shaped magnetic shield member 328 is installed. In other words, the magnetic shield member 328 is formed to extend in a direction (Y-axis direction) intersecting the direction in which the quadrangular prism portion extends, and on the upper surface of the motor 327 in a non-contact manner and on the side surface of the motor 327. And a side portion that faces each other in a non-contact manner. The magnetic shield member 328 is inserted into the hollow portion of the fine movement stage 322b, and the lower surface of both end portions in the longitudinal direction (Y-axis direction) of the side surface portions is the upper surface of the pair of square pillar portions of the coarse movement stage 322a. It is fixed to. Further, of the side surfaces of the magnetic shield member 328, the surfaces other than the lower surfaces of the both end portions are opposed to the bottom wall surface (lower surface) of the inner wall surface of the fine movement stage 322b in a non-contact manner. That is, the magnetic shield member 328 is inserted into the hollow portion of the fine movement stage 322b without hindering the movement of the mover 325 relative to the stator 326.

  As the magnetic shield member 328, a laminated magnetic shield member composed of a plurality of layers of magnetic material films laminated with a predetermined gap (space) therebetween is used. In addition, a magnetic shield member having a configuration in which films of two kinds of materials having different magnetic permeability are alternately laminated may be used. Since the magnetic shield member 328 covers the upper surface and side surfaces of the motor 327 over the entire length of the moving stroke of the mover 325 and is fixed to the coarse movement stage 322a, the fine movement stage 322b and the coarse movement stage 322a Leakage of magnetic flux upward (on the electron beam irradiation optical system side) can be almost certainly prevented over the entire moving range.

  As shown in FIG. 11, the weight cancellation device 324 includes a metal bellows type air spring (hereinafter abbreviated as “air spring”) 382 having an upper end connected to the lower surface of the fine movement stage 322 b, and a lower end of the air spring 382. And a base slider 386 made of a flat plate member connected thereto. The air spring 382 and the base slider 386 are connected to each other via a plate-like connection member 384 having an opening at the center.

  The base slider 386 is provided with a bearing portion 386a for blowing air inside the air spring 382 to the upper surface of the surface plate 321 below the air spring 382, and a bearing surface for the pressurized air ejected from the bearing portion 386a and the surface plate. The base slider 386, the weight cancellation device 324, the fine movement stage 322b, and the mover 325 (as will be described later, when the shuttle is mounted on the coarse / fine movement stage 322) due to the static pressure (pressure in the gap) between the upper surface and the upper surface 321. , Including the shuttle 10 and the like). Note that compressed air is supplied to the air spring 382 via a pipe (not shown) connected to the fine movement stage 322b.

  An annular recess 386b is formed around the bearing portion 386a on the surface (lower surface) of the base slider 386 that faces the platen 321. Correspondingly, the platen 321 is fixed to the recess 386b from the bearing portion 386a. An exhaust path 321a for evacuating the air blown into the space defined by the upper surface of the board 321 to the outside is formed. The recess 386b of the base slider 386 is maintained so that the exhaust port of the exhaust path 321a faces the recess 386b regardless of where the fine movement stage 322b moves on the surface plate 321 within the movable range in the XY plane. Have various dimensions. That is, a kind of differential exhaust type aerostatic bearing is formed below the base slider 386, and the air ejected from the bearing portion 386a toward the surface plate 321 may leak out to the surroundings (into the exposure chamber). It is prevented.

  A pair of pillars 388 are fixed to the lower surface of fine movement stage 322b with air spring 382 interposed therebetween. The pair of struts 388 are arranged symmetrically on both sides in the X-axis direction of the air spring 382 and centered on the air spring 382, and the length in the Z-axis direction is slightly longer than that of the air spring 382. The other ends of a pair of leaf springs 390 having a U-shape in plan view, each having one end connected to the lower end surface of the air spring 382, are connected to the lower ends of the pair of support columns 388, respectively. In this case, the pair of leaf springs 390 has U-shaped tip portions (portions separated into two portions) connected to the air spring 382 and opposite end portions connected to the pair of support columns 388, respectively. The pair of leaf springs 390 and the base slider 386 are substantially parallel, and a predetermined gap is formed between them.

  Since the pair of leaf springs 390 can receive the horizontal force acting on the base slider 386 when the fine movement stage 322b moves in the XY plane, it is not necessary when the fine movement stage 322b moves in the XY plane. It is possible to almost certainly prevent a large force from acting on the air spring 382. The pair of leaf springs 390 are deformed to allow the tilt when the fine movement stage 322b is driven to tilt.

  Here, a structure for detachably mounting the shuttle 10 to the coarse / fine movement stage 322, more precisely, to the fine movement stage 322b will be described.

  As shown in FIG. 8, three triangular pyramid groove members 12 are provided on the upper surface of fine movement stage 322b. For example, the triangular pyramidal groove member 12 is provided at the positions of three apexes of a regular triangle in plan view. The triangular pyramid groove member 12 can be engaged with a sphere or hemisphere provided in the shuttle 10 described later, and constitutes a kinematic coupling together with the sphere or hemisphere. FIG. 8 shows a triangular pyramid groove member 12 such as a petal composed of three plate members. The triangular pyramid groove member 12 is a triangular pyramid that makes point contact with a sphere or a hemisphere, respectively. Since it has the same role as the groove, it is called a triangular pyramid groove member. Therefore, a single member in which a triangular pyramid groove is formed may be used instead of the triangular pyramid groove member 12.

  In the present embodiment, as shown in FIG. 7, three spheres or hemispheres (balls in the present embodiment) 14 are provided in the shuttle 10 corresponding to the three triangular pyramidal groove members 12. The shuttle 10 is formed in a hexagonal shape in which each vertex of an equilateral triangle is cut off in plan view. More specifically, the shuttle 10 has notches 10a, 10b, and 10c formed at the center of each of the three oblique sides in plan view, and covers the notches 10a, 10b, and 10c from the outside. The leaf springs 16 are respectively attached. Balls 14 are fixed to the center of each leaf spring 16 in the longitudinal direction. In a state before being engaged with the triangular pyramid groove member 12, each ball 14, when subjected to an external force, has a radial direction centered on the center of the shuttle 10 (substantially coincides with the center of the wafer W shown in FIG. 7). Only move to a minute.

  After moving the three balls 14 of the shuttle 10 to a position substantially opposite to the three triangular pyramidal groove members 12 above the fine movement stage 322b, the shuttle 10 is moved down so that each of the three balls 14 becomes 3 The shuttle 10 is attached to the fine movement stage 322b by individually engaging with the three triangular pyramid groove members 12. Even when the position of the shuttle 10 with respect to the fine movement stage 322b is deviated from a desired position at the time of mounting, when the ball 14 is engaged with the triangular pyramid groove member 12, an external force is received from the triangular pyramid groove member 12 to As a result of the radial movement, the three balls 14 always engage with the corresponding triangular pyramidal groove members 12 in the same state. On the other hand, the shuttle 10 can be easily detached (detached) from the fine movement stage 322b only by moving the shuttle 10 upward and releasing the engagement between the ball 14 and the triangular pyramid groove member 12. In other words, in this embodiment, a kinematic coupling is constituted by the set of three balls 14 and the triangular pyramid groove member 12, and the kinematic coupling ensures that the mounting state of the shuttle 10 with respect to the fine movement stage 322b is always substantially the same. It can be set to the state. Therefore, no matter how many times it is removed, the shuttle 10 can be moved slightly together with the shuttle 10 only by mounting the shuttle 10 on the fine movement stage 322b via the kinematic coupling (the set of three balls 14 and the triangular pyramid groove member 12). A certain positional relationship with the stage 322b can be reproduced.

  On the upper surface of the shuttle 10, for example, as shown in FIG. 7, a circular concave portion having a diameter slightly larger than that of the wafer W is formed at the center, and an electrostatic chuck (not shown) is provided in the concave portion. The wafer W is electrostatically attracted and held by the chuck. In the holding state of the wafer W, the surface of the wafer W is substantially flush with the upper surface of the shuttle 10. The shuttle 10 is formed with a plurality of circular openings (not shown) penetrating vertically on the mounting surface (suction surface) of the wafer W in a predetermined positional relationship.

  Next, a position measurement system that measures position information of the coarse / fine movement stage 322 will be described. This position measurement system measures the position information of the shuttle 10 in a state where the shuttle 10 is mounted on the fine movement stage 322b via the kinematic coupling described above. This position meter includes a first measurement system 20 that measures position information of the fine movement stage 322b on which the shuttle 10 is mounted, and a second measurement system 25 that directly measures position information of the fine movement stage 322b (see FIG. 16). ).

  First, the first measurement system 20 will be described. Grating plates 22a, 22b, and 22c are provided in the vicinity of the three sides of the shuttle 10 except for the three oblique sides, as shown in FIG. Each of the grating plates 22a, 22b, and 22c has a periodic direction in each of a radial direction centered on the center of the shuttle 10 (which coincides with the center of the circular concave portion in this embodiment) and a direction orthogonal thereto. A dimensional lattice is formed. For example, the grating plate 22a is formed with a two-dimensional grating having a periodic direction in the Y-axis direction and the X-axis direction. In addition, the grating plate 22b is formed with a two-dimensional grating having a direction that is −120 degrees with respect to the Y axis with respect to the center of the shuttle 10 (hereinafter referred to as α direction) and a direction perpendicular thereto as a periodic direction. The grating plate 22c is formed with a two-dimensional lattice having a direction that is +120 degrees with respect to the Y axis with respect to the center of the shuttle 10 (hereinafter referred to as a β direction) and a direction perpendicular thereto as a periodic direction. As the two-dimensional grating, a reflection type diffraction grating having a pitch of, for example, 1 μm is used in each periodic direction.

  Corresponding to the three grating plates 22a, 22b, and 22c, as shown in FIG. 12A, on the lower surface (the surface on the −Z side) of the metrology frame 340, there are three grating plates 22a, 22b, and 22c. Three head portions 24a, 24b, and 24c are fixed at positions that can individually face each of the head portions 24a, 24b, and 24c. Each of the three head portions 24a, 24b, and 24c is provided with a 4-axis encoder head having measurement axes indicated by four arrows in FIG. 12B.

  More specifically, the head portion 24a includes a first head housed in the same housing and having a measurement direction in the X-axis direction and the Z-axis direction, and a measurement direction in the Y-axis direction and the Z-axis direction. And a second head. The first head (more precisely, the irradiation point on the grating plate 22a of the measurement beam emitted by the first head) and the second head (more precisely, the irradiation of the measurement beam emitted by the second head on the grating plate 22a). Are arranged on a straight line parallel to the same X axis. The first head and the second head of the head portion 24a are each a biaxial linear encoder that measures position information of the shuttle 10 in the X-axis direction and the Z-axis direction using the grating plate 22a, and the Y-axis direction and the Z-axis direction. A two-axis linear encoder that measures the position information is configured.

  The remaining head portions 24b and 24c are configured in the same manner as the head portion 24a including the first head and the second head, although the directions with respect to the respective metrology frames 340 are different (measurement directions in the XY plane are different). ing. The first head and the second head of the head unit 24b each use a grating plate 22b, a biaxial linear encoder that measures position information in the direction orthogonal to the α direction of the shuttle 10 in the XY plane and in the Z axis direction, and A two-axis linear encoder that measures position information in the α direction and the Z-axis direction is configured. The first head and the second head of the head unit 24c each use a grating plate 22c to measure position information in a direction orthogonal to the β direction of the shuttle 10 in the XY plane and position information in the Z-axis direction, and A two-axis linear encoder that measures position information in the β direction and the Z-axis direction is configured.

  As each of the first head and the second head included in each of the head portions 24a, 24b, and 24c, for example, an encoder head having the same configuration as the displacement measurement sensor head disclosed in US Pat. No. 7,561,280 is used. Can be used.

An encoder system is configured by the three head portions 24a, 24b, and 24c that measure the position information of the shuttle 10 using the above-described three sets, that is, a total of six biaxial encoders, that is, three grating plates 22a, 22b, and 22c, respectively. The encoder system constitutes the first measurement system 20 (see FIG. 16). Position information measured by the first measurement system 20 is supplied to the exposure control device 380 _i .

  In the first measurement system 20, since the three head portions 24a, 24b, and 24c each have four measurement degrees of freedom (measurement axes), a total of 12 degrees of freedom can be measured. That is, in the three-dimensional space, since the maximum degree of freedom is 6, redundant measurement is actually performed for each of the 6 degrees of freedom directions, and two pieces of position information are obtained.

Therefore, the exposure control device 380 _i uses the average value of the two pieces of position information for each degree of freedom as the measurement result in each direction based on the position information measured by the first measurement system 20. Thereby, the position information of the shuttle 10 and fine movement stage 322b can be obtained with high accuracy in all directions with six degrees of freedom due to the averaging effect.

Next, the second measurement system 25 will be described. The second measurement system 25 can measure position information in the 6-degree-of-freedom direction of the fine movement stage 332b regardless of whether or not the shuttle 10 is mounted on the fine movement stage 332b. For example, the second measurement system 25 irradiates a reflection surface provided on the outer surface of the side wall of the fine movement stage 332b, receives the reflected light, and measures position information of the fine movement stage 332b in the six degrees of freedom direction. Can be configured by the system. Each interferometer of the interferometer system may be suspended and supported on the metrology frame 340 via a support member (not shown), or may be fixed to the surface plate 321. Since the second measurement system is provided in the exposure chamber 301 _i (in the vacuum space), there is no possibility of a decrease in measurement accuracy due to air fluctuation. In the present embodiment, the second measurement system 25 mainly determines the position and orientation of the fine movement stage 332b in a desired manner when the shuttle 10 is not mounted on the fine movement stage 332b, that is, when the wafer is not exposed. Since it is used to maintain the state, the measurement accuracy may be lower than that of the first measurement system 20. The position information measured by the second measurement system 25 is supplied to the exposure control device 380 _i (see FIG. 16). In addition, you may comprise a 2nd measurement system not only by an interferometer system but by an encoder system or the combination of an encoder system and an interferometer system. In the latter case, the position information in the three degrees of freedom direction in the XY plane of the fine movement stage 322b may be measured by the encoder system, and the remaining position information in the three degrees of freedom direction may be measured by the interferometer system.

In the present embodiment, the load lock chamber 302 provided in each of the vacuum chambers 300 _{2 to} 300 ₆ is also arranged side by side in the Y-axis direction, similarly to the vacuum chambers 300 _{2 to} 300 ₆ , so the vacuum chambers 300 _{3 in} one row are arranged. , 300 load lock chamber 302 provided ₂ respectively, and a chamber 300 _1, and the load lock chamber 302 to the vacuum chamber ₃₀₀ 6 in the other _row, 300 5, 300 ₄ is provided respectively to face at a predetermined interval Yes. As shown in FIGS. 2B, 3, and 4, a transport chamber 311 that partitions a transport space SP having a rectangular cross section extending in the Y-axis direction is provided between the two facing each other. A movement path of a shuttle transport system, which will be described later, is provided in the transport space SP. Although not shown, openings on both side walls of the transfer chamber 311 are formed as passages for the shuttle 10 at positions facing the gate portion. Since the transfer space SP can be set to a low vacuum space having a lower degree of vacuum than the inside of the vacuum chamber, for example, an atmospheric pressure space, the transfer chamber 311 is not necessarily used.

The exposure control devices 380 ₂ , 380 ₃ , 380 ₄ , 380 ₅ , 380 ₆ are arranged above the load lock chamber 302 and in the vacuum chambers 300 ₂ , 300 ₃ , 300 as shown in FIG. 2B and FIG. ₄ , 300 ₅ , 300 ₆ are accommodated in control boxes 381 ₂ , 381 ₃ , 381 ₄ , 381 ₅ , 381 ₆ disposed in the space inside. It should be noted that the control boxes 381 ₂ , 381 ₃ , 381 ₄ , 381 ₅ , 381 ₆ are actually a vacuum chamber and a transfer chamber 311, as representatively shown for the control box 381 ₃ in FIG. Is placed on a support frame 313 constructed between the two. The support frame 313 is actually supported on the floor surface F.

  Next, the configuration inside the measurement chamber 60 will be briefly described. In the measurement chamber 60, as shown in FIG. 13A, a measurement stage device 30 having a measurement stage ST that moves two-dimensionally in the XY plane and a measurement table TB mounted on the measurement stage ST, The measurement system 40 and a measurement room transfer system 62 (see FIG. 15) made of, for example, an articulated robot for transferring the wafer W and the shuttle 10 are accommodated. In the measurement stage device 30, the shuttle 10 is detachably attached to the measurement table TB via the same kinematic coupling as described above. Then, the measurement system 40 performs predetermined measurement on the wafer W held on the shuttle 10.

  In addition, a shuttle stocker (not shown) capable of storing a plurality of shuttles 10 at the same time is provided in the measurement chamber 60. In the present embodiment, the shuttle stocker also has a temperature control function of the shuttle 10 accommodated therein. Not limited to this, a temperature control device for the shuttle may be provided separately from the shuttle stocker. In addition, although the conveyance system which conveys a wafer and the conveyance system which conveys a shuttle may be provided separately, in this embodiment, in order to simplify description, a wafer and a shuttle are conveyed by the same conveyance system. Shall be done.

In the measurement table TB, a plurality of circular openings are formed in an arrangement corresponding to the above-described plurality of circular openings formed in the shuttle 10. The measurement stage ST is provided with a plurality of pins 32 in an arrangement corresponding to the plurality of circular openings, and the plurality of pins 32 are individually inserted into the plurality of circular openings of the measurement table TB. A measurement table TB is arranged on the measurement stage ST. The measurement table TB is driven by a drive system 34 provided on the measurement stage ST, and can be moved up and down (moved in the Z-axis direction) with a predetermined stroke. In the present embodiment, the measurement table TB is such that the upper surface of the shuttle 10 is higher than the upper end surfaces of the plurality of pins 32 by a predetermined distance in a state where the shuttle 10 is mounted via the kinematic coupling (the upper end surfaces of the plurality of pins). 13 does not protrude from the upper surface of the shuttle 10) and the wafer placement surface (upper surface of the electrostatic chuck) of the shuttle 10 is lower than the upper end surfaces of the plurality of pins 32 by a predetermined distance (see FIG. 13A). The upper end surfaces of the plurality of pins 32 protrude from the wafer mounting surface of the shuttle 10 and can move up and down between the second positions shown in FIG.
Note that the measurement table TB may be placed on the measurement stage ST, and the plurality of pins 32 may be moved up and down with respect to the measurement table TB.

  The measurement stage ST is driven (including rotation in the θz direction) in the XY plane by a measurement stage drive system 36 (see FIG. 15) composed of a planar motor, for example. Position information of the measurement stage ST in the XY plane is measured by a measurement stage interferometer 38 (see FIG. 15). The vertical position of the measurement table TB is measured by an encoder included in the drive system 34. The operation of each part of the measurement stage device 30 is controlled by the measurement control device 50 (see FIG. 15).

  As shown in FIG. 13A, the measurement system 40 includes an alignment detection system ALG and a surface position detection device AF (see FIG. 15) having an irradiation system 42a and a light receiving system 42b.

  In the present embodiment, in response to the application of a sensitive agent (electron beam resist) to the upper surface of the wafer held on the shuttle 10, the electron beam resist is exposed as detection light of the alignment detection system ALG. A detection beam having a wavelength that is not allowed is used. For example, the alignment detection system ALG irradiates the target mark with a broadband detection light beam that does not sensitize the resist applied on the wafer, and the image of the target mark formed on the light-receiving surface by the reflected light from the target mark is not detected. An image processing type FIA (Field Image Alignment) system that captures an image of the illustrated index (an index pattern on an index plate provided inside) using an image sensor (CCD or the like) and outputs the imaged signals. Is used. The imaging signal from the alignment detection system ALG is supplied to the measurement control device 50 via a signal processing device (not shown) (see FIG. 15). The alignment detection system ALG is not limited to the FIA system. For example, the target mark is irradiated with coherent detection light, and two diffracted lights generated from the target mark (for example, diffracted light of the same order or in the same direction) are diffracted. A diffracted light interference type alignment detection system that detects by diffracting light) may be used instead of the FIA system.

  The surface position detection system AF includes an irradiation system 42a and a light receiving system 42b. For example, an oblique incidence type multipoint focal position having the same configuration as that disclosed in US Pat. No. 5,448,332 and the like is used. Consists of a detection system. The plurality of detection points of the surface position detection system AF are arranged at predetermined intervals along the X-axis direction on the surface to be detected. In this embodiment, for example, they are arranged in a row matrix of 1 row and M columns (M is the total number of detection points) or 2 rows and N columns (N is 1/2 of the total number of detection points). Although not shown in FIG. 13A, the plurality of detection points are set almost evenly in a region having a length in the X-axis direction that is about the same as the diameter of the wafer W. The position information (surface position information) in the Z-axis direction can be measured on almost the entire surface of the wafer W only by scanning the wafer W once in the Y-axis direction. In the present embodiment, the components placed in the measurement chamber 60 described above, that is, the measurement stage device 30, the measurement system 40, the measurement chamber conveyance system 62, and the like, and the measurement control device 50 are held on the shuttle 10. A measuring unit 65 that performs pre-measurement on the wafer before exposure is configured (see FIG. 15).

In addition, in the exposure system 1000 according to the present embodiment, the shuttle 10 that moves in the space SP described above and holds the wafer before exposure is transferred from the measurement chamber 60 to the load lock chamber 302 included in the vacuum chamber 300 _i. A shuttle transport system 70 (see FIG. 14) is further provided for repeatedly performing the shuttle transport operation for transporting the shuttle 10 that holds the exposed wafer from the load lock chamber 302 to the measurement chamber 60. The shuttle transfer system 70 is configured by a horizontal articulated robot that can move in the space SP, for example. The shuttle transport system 70 is controlled by a transport system control device 72 (see FIG. 14) including a microcomputer or the like.

FIG. 14 is a block diagram showing the configuration of the control system of the exposure system 1000. The control system of the exposure system 1000 includes a main control device 100 composed of a workstation and the like that collectively control the entire exposure system 1000, a measurement control device 50 under the control of the main control device 100, and five exposure control devices 380 _2. ˜380 ₆ and a transport system controller 72.

  FIG. 15 is a block diagram showing the input / output relationship of the measurement control device 50 constituting the control system of FIG. The measurement control device 50 includes a microcomputer and controls each unit shown in FIG. 15 provided in the measurement chamber 60.

FIG. 16 is a block diagram showing the input / output relationship of the five exposure control devices 380 _i (i = 2 to 6) constituting the control system of FIG. The exposure control device 380 _i includes a microcomputer and controls each unit shown in FIG. 16 provided in the exposure chamber 301 _i .

  Next, an example of the preparatory work performed in the measurement chamber 60 will be described based on the flowchart of FIG. The processing of each step described below is performed under the control of the measurement control device 50. However, for the sake of simplification of description, the description regarding the measurement control device 50 is omitted unless particularly necessary.

  It is assumed that a plurality of shuttles 10 are stored in a shuttle stocker (not shown). Further, it is assumed that the wafer before exposure is placed on the substrate transfer section by a wafer transfer system on the C / D 9000 side connected inline to the measurement chamber 60.

  In step S102, the shuttle 10 stored in a shuttle stocker (not shown) is mounted on the measurement table TB. Specifically, the shuttle 10 stored in the shuttle stocker (not shown) is positioned at the second position on the measurement stage ST at the wafer exchange position from the shuttle stocker by the measurement chamber transport system 62. After being conveyed above the measurement table TB, it is driven downward and attached to the measurement table TB via a kinematic coupling.

In the next step S104, the wafer before exposure in the substrate transfer unit by the measuring chamber conveying system 62 (for convenience, the wafer W ₁₎ is passed to a plurality of pins 32 of the measuring stage ST. At this time, the measurement table TB is in a second position, in this state, the wafer W ₁ is in a state where the rotational position displacement and displacement between the center positions is adjusted is placed on the plurality of pins 32.

In the next step S106, to hold the wafer _{W 1} to the shuttle 10. Specifically, the measurement table TB by driving upwards to the first position, to place the wafer W ₁ on the electrostatic chuck of the shuttle 10, then, starts the adsorption of the wafer by the electrostatic chuck. The shuttle 10 is provided with a connection terminal connected to the electrostatic chuck, and the measurement table TB is provided with a table side terminal connected to a power supply source (not shown), and the measurement table TB. When the shuttle 10 is mounted via the kinematic coupling, the connection terminal and the table side terminal are connected, and power can be supplied from the power supply source to the electrostatic chuck.

In the next step S108, it performs an outline (rough) position measurement with respect to the shuttle 10 of the wafer _{W 1.} More specifically, first, after the search alignment of the wafer W _1, and measures the positional information of the reference mark provided on the shuttle 10 (not shown), the relative wafer W ₁ for the shuttle 10 (reference marks) Find location information.

Upon search alignment, for example, at least two search alignment marks located on the periphery portion substantially symmetrical with respect to the center of the wafer W ₁ (hereinafter, referred to as search mark) is detected. The measurement control device 50 controls the driving of the measurement stage ST by the measurement stage drive system 36 and positions each search mark in the detection region (detection field of view) of the alignment detection system ALG while using the measurement stage interferometer 38. acquires measurement information, a detection signal upon detection of search mark formed on the wafer W ₁ by using the alignment detection system ALG, based on the measurement information by the measuring stage interferometer 38, the position information of each search mark Ask for.

  More specifically, the measurement control device 50 detects the detection result of the alignment detection system ALG output from a signal processing device (not shown) (the detection center (index center) of the alignment detection system ALG obtained from the detection signal) and each search mark. Relative position) and the measurement value of the measurement stage interferometer 38 when each search mark is detected, the position coordinates of the two search marks on the reference coordinate system are obtained. Here, the reference coordinate system is an orthogonal coordinate system defined by the measurement axis of the measurement stage interferometer 38.

Thereafter, the measurement control device 50 obtains the position coordinates on the reference coordinate system of the plurality of reference marks provided on the shuttle 10 in the same procedure as the search mark. Then, based on the position coordinates of the position coordinates and a plurality of reference marks of the two search marks to determine the relative position with respect to the shuttle 10 of the wafer W _1. Here, what is read as approximate position measurement is that the detection accuracy of the position coordinates of the mark by the alignment detection system ALG is lower than the detection accuracy of the position coordinates of the alignment mark by detection of reflected electrons performed immediately before exposure. Because. Accordingly, the approximate position measuring relative the shuttle 10 of the wafer W ₁ is completed. Incidentally, the wafer W _1, since in fact loaded on the shuttle 10 in a state where the rotational position deviation and the center position deviation is adjusted, the more central position deviation of the wafer W ₁ is negligibly small, the residual rotation error is very Small.

When coarse position measurement is finished for the shuttle 10 of the wafer W ₁ in step S108, the process proceeds to step S110, flatness measurement of the wafer W ₁ (Measurement of surface irregularities) is carried out, the flatness measurement, the measuring stage ST This is performed by capturing the measurement information of the surface position detector AF and the measurement information of the measurement stage interferometer 38 at a predetermined sampling interval while moving in the Y-axis direction. Here, the wafer flatness is measured in the electron beam exposure apparatus because a position measurement error (lateral deviation) in the XY plane of the wafer occurs due to the unevenness of the wafer surface. This is because the measurement error needs to be corrected. This position measurement error can be easily obtained by calculation based on wafer flatness information (Z position information Z (X, Y) corresponding to XY coordinate position (X, Y) on the wafer coordinate system). . Since the information on the rotational deviation of the wafer is known by the search alignment, the relationship between the wafer coordinate system and the reference coordinate system can be easily obtained.

When flatness measurement step S110 is finished, in step S112, the shuttle 10 holding the wafer W ₁ is, by measuring the indoor transport system 62 is driven upwardly, detached from the measurement table TB to release the kinematic coupling After that, it is placed on the load-side shuttle placement portion of the shuttle delivery portion provided at the boundary with the space SP of the measurement chamber 60. Thereby, the preliminary preparation work including the preliminary measurement operation (S108, S110) in the measurement chamber 60 is completed. Even after the shuttle 10 is detached from the measurement table TB, the electrostatic chuck of the shuttle 10 is capable of holding the wafer W ₁ by the residual charge. Further, the shuttle 10 may be provided with an internal power supply, and after the shuttle 10 is removed from the measurement table TB, power may be supplied from the internal power supply to the electrostatic chuck.

  Next, the unloading operation of the exposed wafer performed in the measurement chamber 60 will be described based on the flowchart of FIG. The processing of each step described below is performed under the control of the measurement control device 50. However, for the sake of simplification of description, the description regarding the measurement control device 50 is omitted unless particularly necessary. As a premise, it is assumed that the shuttle holding the exposed wafer is placed on the unload-side shuttle placement unit of the shuttle delivery unit.

In step S122, the exposed wafer (for convenience, the wafer _{W 0)} shuttle 10 for holding the can, is attached to the measuring table TB. Specifically, the shuttle 10 holding the wafer W ₀ is moved from the unload-side shuttle placement part of the shuttle delivery part to the above-described first position on the measurement stage ST at the wafer exchange position by the measurement room transfer system 62. After being conveyed above the measurement table TB that is positioned, it is driven downward and attached to the measurement table TB via a kinematic coupling.

In the next step S124, the disengaging from the shuttle 10 to the wafer _{W 0} (removed). Specifically, the suction of the wafer W ₀ by the electrostatic chuck of the shuttle 10 is released, and the measurement table TB is driven downward to the second position. Thus, the wafer W ₀ is totally pushed up from below by a plurality of pins 32, the wafer W ₀ can be easily detached from the shuttle 10. In the case where the wafer W ₀ due to residual charge is less likely to disengage from the shuttle 10 can in the wafer W ₀ or is applied ultrasound, or also disengaging the wafer while various neutralization measures.

In the next step S126, the wafer W ₀ which is supported by a plurality of pins 32, the measuring chamber conveying system 62 is carried out from the measurement table TB is placed on the substrate transfer unit described above.

  In the next step 128, the shuttle 10 is driven upward by the measurement room transport system 62, released from the measurement table TB after releasing the kinematic coupling, and then stored in an empty storage shelf of the shuttle stocker. Is done. Thereby, the unloading operation of the exposed wafer in the measurement chamber 60 is completed. The shuttle 10 accommodated in the shuttle stocker is stored in the shuttle stocker until it is next taken out, and is adjusted (cooled) to a predetermined temperature during the storage.

Next, a processing flow for the wafer by the exposure system 1000 will be described. The processing described below is performed by the measurement control device 50, the exposure control devices 380 _{2 to} 380 ₆ , and the transport system control device 72 under the management of the main control device 100 that manages these control devices in an integrated manner. However, in the following, description regarding these control devices will be omitted unless particularly required. In practice, two exposure units 310 are accommodated in each exposure chamber 301 _i , and two load lock chambers 302 (load lock chambers) are provided correspondingly. Then, for convenience of explanation, it is assumed that each exposure chamber 301 _i contains one exposure unit 310 and only one load lock chamber is provided in the vacuum chamber. That is, the vacuum chamber (exposure chamber), the exposure unit, and the load lock chamber (load lock chamber) have a one-to-one correspondence with each other.

  Prior to the start of the processing by the exposure system 1000, the wafer before the exposure with the electron beam resist applied to the measurement chamber 60 and the C / D 9000 is transferred by a transfer system (for example, an articulated robot) in the C / D 9000. Is placed on a substrate transfer portion provided at a boundary portion between the two. Within the C / D 9000, a series of processes including an electron beam resist coating process on the wafer are sequentially repeated, and the wafers are sequentially placed on the substrate transfer unit.

First, in the measurement chamber 60, the process of step S102-step S112 mentioned above is performed. Thus, the shuttle 10 to coarse position measurement and flatness measurement of wafer shuttles to hold the wafer W ₁ before exposure was completed, will be placed on the load side shuttle mounting portion of the shuttle transfer unit.

Next, the shuttle 10 that holds the wafer W ₁ before exposure from the load-side shuttle placement unit of the shuttle transfer unit by the shuttle transfer system 70 is loaded into the load lock chamber corresponding to the exposure chamber 301 _i specified by the main controller 100. after being transported to the front of the 302, it is replaced with the shuttle 10 to hold the exposed wafer W of the designated exposure chamber 301 _i. In this case, main controller 100 designates exposure chamber 301 _i if there is an exposure chamber 301 _i for which the exposure processing for the wafer has been completed at that time, and if there is no exposure chamber for which the exposure processing has been completed. The exposure chamber 301 _i where the exposure process is scheduled to end at the earliest timing is designated. Here, as an example, it is assumed that the exposure chamber 301 _i where the exposure process is scheduled to end at the earliest timing is designated.

Hereinafter, a shuttle exchange operation, that is, a wafer exchange operation integrated with the shuttle will be specifically described with reference to the drawings. First, the shuttle 10 holding the wafer W ₁ taken out from the load side shuttle mounting portion of the shuttle transfer unit, as shown in FIG. 18, the vacuum chamber 300 _i load the exposure chamber 301 _i formed therein It is transported by the shuttle transport system 70 to a position in front of the lock chamber 302 (in this case, the + Y side). In this case, in the exposure chamber 301 _i, the exposure of the wafer _{W 0} is performed. In the following description, the "shuttle for holding a wafer W _1", for convenience, referred to as "shuttle 10 _1", the "shuttle for holding a wafer W _0", referred to as "shuttle 10 _0". In addition to this, in FIGS. 19 to 27 used in the following description, illustration of the wafer is omitted.

When the exposure of the wafer W ₀ is completed, as indicated by a downward white arrow in FIG. 18, the outer in the load-lock chamber 302 of the vacuum chamber 300 _i (atmosphere side) after the gate valve 302b is opened , as indicated by the black arrow in FIG. 19, the shuttle 10 ₁ is carried into the load lock chamber 304 by the shuttle transfer system 70. Next, as shown by the upward white arrow in FIG. 19, after the outer (atmosphere side) gate valve 302b is closed, the evacuation of the load lock chamber 304 is started.

Shuttle transfer system 70, after carrying the shuttle 10 ₁ into the load lock chamber 304, the operation of carrying the shuttle for holding a wafer before the next exposure from the shuttle transfer unit to another load lock chamber, or another exposed Engage in an operation (hereinafter referred to as another operation) of unloading the shuttle holding the wafer from another load lock chamber and transporting it to the shuttle delivery section.

When the inside of the load lock chamber 304 reaches a high vacuum state similar to that of the exposure chamber 301 _i , the inner side (vacuum side) provided in the load lock chamber 302 as shown by a downward white arrow in FIG. ) after the gate valve 302c is opened, the exposure chamber 301 _i inside the exposure chamber transport system 312, the shuttle 10 ₁ is housed in the lower storage rack of the shuttle carrier 306 in the exposure chamber 301 _i. At this time, as shown in FIG. 20, the shuttle carrier 306 is in a first state (first position) in which the height of the lower storage shelf coincides with the opening of the load lock chamber 304. At this time, the position of the shuttle 10 _1, for convenience, referred to as loading and unloading position. In this case, exposure of wafer W ₀ on the shuttle 10 ₀ is continued. 18 to 27, the shuttle carrier 306 is shown in a simplified manner with a virtual line (two-dot chain line) for easy understanding of the position of the shuttle.

Next, as indicated by a hollow arrow in FIG. 21, the shuttle carrier 306 descends from the first position to the second position below the first distance. As a result, the shuttle carrier 306 enters a second state in which the height of the upper storage shelf matches the opening of the load lock chamber 304. At this time, since the exposure of wafer W ₀ on the shuttle 10 ₀ is continued, the shuttle carrier 306, until the exposure is completed, maintaining the second state. That is, the shuttle 10 ₁ waits at the first waiting position below the loading and unloading position.

When the exposure ends, the exposure chamber transport system 312, the shuttle 10 _0, removed from fine movement stage 322b, toward the load lock chamber 302 side (+ Y side) as indicated by the black arrow in FIG. 21 conveyed And stored in the upper storage shelf of the shuttle carrier 306. Thus, it housed respectively above and below the storage rack of the shuttle carrier 306, shuttle 10 ₀ and the shuttle 10 _1, as shown in FIG. 22, a state of vertically overlapping. In advance to the shuttle 10 ₀ is removed from the fine movement stage 322b, based on the measurement information of the second measurement system 25 (see FIG. 16), in directions of six degrees of freedom position of the fine moving stage 322b, the feedback control of the posture, initiated by the exposure control unit 380 _i, then based on the first measurement information of the measurement system 20 (see FIG. 16), until the position control of the fine movement stage 322b of the shuttle and integral is started, the fine movement stage 322b 6 The position and orientation in the direction of freedom are maintained in a predetermined reference state.

Next, as indicated by a hollow arrow in FIG. 22, the shuttle carrier 306 moves upward by a first distance and returns to the first state (first position) described above. That is, the shuttle by upward movement of the shuttle carrier 306, upward and shuttle 10 ₁ and the shuttle 10 _0, is moved a first distance, along with positioning the shuttle 10 ₀ to the second standby position above the loading and unloading position 101 Position ₁ to the loading / unloading position.

Then, the exposure chamber transport system 312, the shuttle 10 ₁ is taken out from the shuttle carrier 306 is transported upward in the coarse and fine movement stage 322 as indicated by the black arrow in FIG. 23, is mounted on the fine movement stage 322b (See FIG. 24). At this time, as described above, directions of six degrees of freedom position of the fine moving stage 322b, since the posture is maintained at the reference state, the shuttle 10 _1, only attached to the fine movement stage 322b via the kinematic coupling, electronic positional relationship of the beam irradiation device 330 (electro-optical system) and the shuttle 10 ₁ has a desired positional relationship. A plurality considering the results of the previously-described simplified alignment measurement, the position of 322b of the fine movement stage by the fine adjustment, which are formed on the wafer W ₁ on the shuttle 10 ₁ mounted on the fine movement stage 322b ( For example, the electron optical system can reliably irradiate at least one alignment mark formed on a scribe line (street line) corresponding to each of 100 shot areas. Therefore, the reflected electrons from at least one each of the alignment mark is detected by the reflected electron detection system, all points alignment measurement of the wafer W ₁ is performed, based on the result of this all points alignment measurement, a plurality of the wafer W ₁ The exposure using the electron beam irradiation apparatus 330 is started for the shot area.

In parallel with all points alignment measurement and exposure of the shuttle 10 ₀ of the aforementioned shuttle transfer portion of the transfer operation to the unload side shuttle mounting unit (recovery operation of the shuttle) is performed in the following procedure.

That is, first, as indicated by the white arrow in FIG. 24, the shuttle carrier 306 moves downward by the first distance and enters the second state again. Thus, as shown in FIG. 25, the upper storage rack of the shuttle carrier 306 that shuttle 10 ₀ is accommodated is positioned at the same height as the opening of the load lock chamber 304.

Then, the exposure chamber transport system 312, the shuttle 10 ₀ is removed from the shuttle carrier 306, as indicated by the black arrow in FIG. 25, is conveyed toward the load lock chamber 304, the shuttle 10 ₀ loadlock chamber When it is carried into 304, the vacuum-side gate valve 302c is closed (see the white arrow in FIG. 26).

At this time, the shuttle transport system 70 once completes the other operations described above and moves in front of the load lock chamber 302 included in the vacuum chamber 300 _i . When the shuttle transfer system 70 is continuing another operation, for example, when the exposure of the wafer W ₀ in the exposure chamber 301 _i is completed, the main controller 100 immediately performs the other operation. It may be temporarily interrupted and moved in front of the load lock chamber 302 included in the vacuum chamber 300 _i .

Next, as shown by a downward white arrow in FIG. 27, after the gate valve 302b of the air side is opened, by the shuttle transfer system 70 shuttles 10 ₀ is taken out from the load lock chamber 304, is recovered . The exposure control device 380 _i drives the shuttle carrier 306 in the second state upward by a first distance as shown by the upward white arrow in FIG. 27 before and after opening the gate valve 302b. To return to the first state. Incidentally, after the shuttle 10 ₀ has been removed, the gate valve 302b is closed.

Then, the recovered shuttle 10 _0, by the shuttle transfer system 70, immediately returned to the unload side shuttle mounting portion of the shuttle transfer unit. The shuttle 10 ₀ returned is by the measurement chamber conveying system 62, for wafer exchange, is conveyed toward the measurement table TB. Thereafter, the inside measurement chamber 60 is repeated the process described above, each time the specified exposure chamber by the main controller 100 is performed, the conveyance of the shuttle by the shuttle transfer system 70, and designated the exposure chamber 301 _i shuttle Exchange and exposure processing operations are repeated.

Incidentally, in the open front and rear of the gate valve 302b for extracting from the load lock chamber 304 of the shuttle 10 _0, the shuttle carrier 306, it is assumed to return to the first state (the first position), not limited to this, The shuttle carrier 306 in the second state may be left as it is. In this case, when the shuttle is exchanged in the exposure chamber 301 _i , the procedure similar to the above is performed while the setting of the first state and the second state of the shuttle carrier 306 is opposite to the above description. You can change the shuttle. In this case, the first standby position for the shuttle holding the wafer before exposure is set above the carry-in / out position, and the second standby position for the shuttle holding the exposed wafer is set below the carry-in / out position. Will be.

Actually, the above-described preparatory work in the measurement chamber 60 and a series of operations by the shuttle transport system 70 (carrying the shuttle holding the wafer before exposure from the shuttle transfer unit into the load lock chamber, and The total time required for carrying out the shuttle holding the exposed wafer from the load lock chamber and carrying it to the shuttle transfer unit) is the exposure operation (all-point alignment operation) performed by one exposure unit 310. Therefore, only one measurement chamber 60 and one shuttle transport system 70 are provided for ten exposure units 310 as in the exposure system 1000 according to the present embodiment. It is enough that it is done. That is, due to the series of operations in the measurement chamber 60 and the series of operations by the shuttle transport system 70, the throughput of the exposure system 1000 as a whole is not reduced. On the contrary, by providing only one measurement chamber and one shuttle transport system for a plurality of exposure units like the exposure system 1000 according to the present embodiment, it is an essential drawback of electron beam exposure. It is possible to secure a practically sufficient throughput by compensating for the disadvantage that the throughput is extremely low. Note that it is easy to increase the number of vacuum chambers (exposure chambers) adjacent to at least one of the vacuum chamber 300 ₃ and the vacuum chamber 300 ₆ , so that there is play time in the measurement chamber 60 and the shuttle transport system 70. In addition, further increase in throughput can be expected by further increasing the number of exposure chambers (and exposure units).

As described above, the exposure system 1000 according to the present embodiment uses the measurement chamber 60 that performs pre-measurement on the wafer before exposure held on the shuttle 10 and the electron beam optical system for the wafer on the shuttle 10. A plurality of vacuum chambers 300 _i each having an exposure chamber 301 _{i in} which exposure is performed, each having a load lock chamber 302, a wafer for which pre-measurement has been completed, and a wafer for which exposure has been completed are integrated with the shuttle 10, A shuttle transfer system 70 for transferring between the measurement chamber 60 and each load lock chamber 302 of the plurality of vacuum chambers 300 _i is provided. For this reason, the exposure chamber transfer system 312 carries the shuttle 10 holding the wafer, which has been carried into the load lock chamber 302 of each of the vacuum chambers 300 _{2 to} 300 _{6 and} completed the pre-measurement, into each exposure chamber 301 _i . After mounting on fine movement stage 322b, fine wafer alignment and wafer exposure based on this result can be started immediately.

Further, according to the present embodiment, the wafers in the exposure chamber 301 _i are exchanged together with the shuttle in the procedure described with reference to FIGS. 18 to 27, and in particular, the lower and upper stages of the shuttle carrier 306. the storage shelves, arranged both shuttle ₁₀ 0, 10 ₁ in the vertical shuttle 10 ₀ for holding the wafer _{W 0} of the shuttle 10 ₁ and exposed for holding the wafer _{W 1} before exposure by housing respectively, the shuttle carrier By moving 306 upward (or downward), a procedure (see FIGS. 22 and 23) for simultaneously moving both shuttles 10 ₀ and 10 ₁ upward is employed. For this reason, the space of the exposure chamber 301 _i can be efficiently used and exchanged with the wafer shuttle, and the internal volume (dimensions in the X-axis direction and the Y-axis direction) of the exposure chamber 301 _i is more than necessary. There is no need to make it bigger. In this respect, the footprint can be reduced. In this embodiment, the shuttle carrier 306 is used to move the shuttles 10 ₀ , 10 ₁ up and down at the same time (or downward). However, the shuttle carrier 306 is not necessarily used. If the same can be done, the configuration for that is not particularly limited. For example, both shuttles 10 ₀ , 10 ₁ may be moved upward (or downward) at the same time in a state where both shuttles 10 ₀ , 10 ₁ are arranged _one above the other.

Further, the exposure system 1000 according to the present embodiment includes a total of ten exposure units 310 housed in vacuum chambers 300 _{2 to} 300 ₆ , each of which can be turned on / off. In addition, for example, 100 optical columns, for example, 300 mm, composed of a multi-beam optical system capable of arranging, for example, 4000 deflectable circular spots of electron beams having a diameter of 20 nm within a rectangular (for example, 100 μm × 20 nm) exposure region. For example, an electron beam irradiation device 330 is provided in the lens barrel 331 in a positional relationship corresponding to, for example, approximately 100 shot areas on the wafer at a ratio of 1: 1. Therefore, by performing exposure of separate wafers in parallel by a total of ten exposure units 310, the throughput can be significantly improved as compared with the conventional electron beam exposure apparatus.

Further, in the exposure system 1000 according to the present embodiment, measurement of the positional relationship of the wafer with respect to the shuttle is performed in a state where the wafer is held by the shuttle 10 prior to exposure in a measurement chamber 60 different from the exposure chamber 301 _i . In addition, the shuttle 10 holding the wafer for which the pre-measurement is completed is carried into each exposure chamber 301 _i , and the kinematic is moved to the fine movement stage 332b at the reference position. Just by mounting through the coupling, alignment measurement and exposure to the wafer can be started immediately. Also in this respect, the throughput can be improved as compared with the conventional case.

Further, according to the exposure system 1000 according to the present embodiment, the first control rack 200 that distributes the utility supplied from below the floor surface F via the wiring and piping to each of the chambers 300 _{1 to} 300 ₆ has the + X side. Are disposed on the −X side adjacent to the −Y side and opposite to the C / D 9000 with respect to the chambers 300 _{4 to} 300 ₆ in this row. For this reason, a layout in which footprints (particularly width dimensions (dimensions in the X-axis direction)) between the two rows of chambers 300 _{1 to} 300 ₃ and 300 _{4 to} 300 ₆ and the C / D 9000 side can be made possible. Even though two chambers are arranged on one side in the longitudinal direction of the C / D 9000, an unusable empty space may be created on one side in the direction perpendicular to the longitudinal direction of the C / D 9000. Absent.

  The components of the exposure system 1000 including the two rows of chambers, the first control rack 200, and the second control rack 500 occupy a rectangular parallelepiped space as a whole together with the C / D 9000. Therefore, in this embodiment, it is possible to avoid the occurrence of a poorly usable space in the clean room and to improve the utilization efficiency of the space.

Further, since the utility is supplied to each of the chambers 300 _{1 to} 300 ₆ from above by the second control rack 500, the following advantages are obtained. That is, for example, it is necessary to connect many electric wires (wirings) to the lens barrel 331 of the electron beam irradiation apparatus 330. However, if such electric wires are to be connected from below, for example, the stage device 320 including the coarse / fine movement stage 332 and the like. Exist, get in the way, and the connection itself is difficult. On the other hand, when connecting the electric wire to the barrel 331 from above, since there is nothing to block, it can be easily connected even if the number of electric wires is large.

  Further, according to the stage apparatus 320 provided in each of the plurality of exposure units 310 of the exposure system 1000 according to the present embodiment, the coarse movement stage drive system 323 that drives the coarse movement stage 332a in the X-axis direction is a uniaxial drive mechanism, for example. Since it is constituted by a feed screw mechanism using a ball screw, there is no possibility of magnetic flux leakage from the feed screw mechanism. Further, as the fine movement stage drive system 327 for driving the fine movement stage 332b on which the shuttle 10 is mounted in the direction of 6 degrees of freedom, the above-described closed magnetic field type and moving magnet type motor 327 is used, and the upper surface and both side surfaces of the motor. However, since both ends of the coarse movement stage 332a are covered with the magnetic shield member 328, the upward magnetic flux leakage is effectively suppressed or prevented in the entire movement range of the coarse movement stage 332a and the fine movement stage 332b. Is possible. Therefore, in the present embodiment, there is almost no possibility of causing a magnetic field fluctuation that has a negligible adverse effect on the positioning of the electron beam emitted from the beam source of the electron beam irradiation apparatus 330. Since the stage apparatus 320 according to the present embodiment can effectively suppress or prevent upward magnetic flux leakage as described above, an electron beam exposure apparatus, other charged particle beam exposure apparatus, SEM, or the like It is suitable as a stage device used for the above.

  Further, in the stage device 320 according to the present embodiment, since the weight canceling device 324 that supports the own weight of the fine movement stage 332b (and the shuttle 10) on the surface plate 321 is provided, the fine movement stage (and the shuttle 10) is provided. In this respect, it is not necessary to generate a steady force for supporting the weight of the motor 327 when it is not driven, and in this respect as well, it is possible to further suppress or prevent the magnetic force from adversely affecting the positioning of the electron beam. .

  Further, in the exposure unit 310 according to the present embodiment, in the state where the shuttle 10 is mounted on the fine movement stage 322b, the position information of the fine movement stage 322b in the direction of 6 degrees of freedom is obtained by measuring the position information of the shuttle 10 described above. It is measured by the first measurement system 20 comprising: Since the encoder system has an extremely short optical path length of the measurement beam as compared with the interferometer, the required space is small and the first measurement system 20 can be downsized. Further, as described above, the first measurement system 20 can measure a total of 12 degrees of freedom. Redundant measurement is performed for each of the 6 degrees of freedom directions, and two pieces of position information are obtained. Then, based on the position information measured by the first measurement system 20, the exposure control device 380 uses the average value of the two pieces of position information for each degree of freedom as the measurement result in each direction. Thereby, the position information of the shuttle 10 and fine movement stage 322b can be obtained with high accuracy in all directions with six degrees of freedom due to the averaging effect. Therefore, it is possible to improve the position controllability of the wafer during exposure, and high-accuracy exposure is possible.

  In the exposure unit 310 according to the present embodiment, the position controllability of the wafer during exposure can be improved. Therefore, the exposure unit 310 removes a part of the line pattern and removes the ultraviolet light exposure apparatus. It can be suitably used for forming a pattern including a non-periodic portion finer than the image limit. Here, as such a pattern forming method, as disclosed in, for example, Japanese Patent Application Laid-Open No. 2011-258842, as a first step, a line width d (ultraviolet light) is applied to each shot region on the wafer by, for example, a double patterning method. A line-and-space pattern having a pitch of 2d is formed with a line width finer than the resolution limit of the exposure apparatus. As a second step, there is a pattern forming method in which the line pattern is partially removed from the line and space pattern by exposure and etching with an electron beam exposure apparatus in each shot area.

  In the case of forming the pattern using the exposure system 1000, in the first stage, after forming a line and space pattern having a line width of 10 nm and a pitch of 20 nm in each shot area on the wafer by, for example, a double patterning method, By exposing the non-periodic part using each exposure unit 310 of the exposure system 1000 with the wafer as a target in two stages, the non-periodic part (separation) finer than the resolution limit of the ultraviolet light exposure apparatus. Part) can be formed efficiently.

  The double patterning method used in the first stage may be either a pitch splitting technique or a spacer pitch doubling (Spacer Pitch Doubling, Spacer transfer or SidewalL transfer) technique. The target used in the second stage is not limited to the double patterning method, and an electron beam exposure apparatus or an EUV exposure apparatus is used to set the line width d (beyond the resolution limit of the ultraviolet light exposure apparatus) in each shot area. It may be a wafer having a fine line width and a line-and-space pattern with a pitch of 2d.

In addition, in the exposure unit 310 according to the present embodiment, the second measurement system 25 that constantly measures the positional information of the fine movement stage 322b in the 6-degree-of-freedom direction is provided separately from the first measurement system 20. For this reason, even when the shuttle is not mounted on the fine movement stage 322b, the exposure control device 380 _i (i = 2 to 6) can control the position and posture of the fine movement stage 322b in the 6-degree-of-freedom direction.

Further, in the exposure system 1000 according to the present embodiment, a pair of exposure units 310 are accommodated in the vacuum chamber 300 _i . That is, not only the stage apparatus 320 including the movable fine movement stage 322b on which the shuttle 10 holding the wafer W is mounted inside each of the vacuum chambers 300 _{2 to} 300 ₆ but also the exposure apparatus 310 together with the stage apparatus 320. The entire electron beam irradiation apparatus 330 having an electron beam optical system for exposing the wafer held by the shuttle 10 on the fine movement stage 322b by irradiating an electron beam is accommodated. Therefore, even if the atmospheric pressure fluctuates, the lens barrel 331 that is entirely accommodated in the vacuum chamber 300 _i is not deformed, and the electron beam optical system in the lens barrel 331 is adversely affected. There is no fear.

  In the above-described embodiment, the stage device 320 includes both the magnetic shield member 328 and the weight canceling device 324, both ends of which are fixed to the coarse movement stage 332a, as a configuration for suppressing or preventing magnetic field fluctuations. However, for example, only the magnetic shield member 328 may be provided.

Each unit that was placed inside the measurement chamber 60 in the above embodiment may not be provided inside the chamber 300 _1, short, pre-measurement of such schematic position measurement and flatness measurement of wafer shuttle The above-described measuring unit 65 that can execute the above-described processing may be provided in a part of the exposure system.

  Moreover, the content of the prior measurement demonstrated by the said embodiment is only an example, and may include other measurement content. In the above-described embodiment, the measurement stage apparatus 30 on which the wafer before exposure is placed for the pre-measurement cooperates with the measurement chamber transfer system 62 (transfer member) to load the wafer into the shuttle 10 and the shuttle. Although the case of having the load / unload apparatus (32, 34, TB) for unloading the wafer from 10 has been described, the present invention is not limited to this, and the measurement is performed separately from the measurement stage ST used for preliminary measurement. A loading / unloading device that loads the wafer with respect to the shuttle 10 and unloads the wafer from the shuttle 10 may be provided in cooperation with the transfer member. Moreover, you may provide the cleaning apparatus of the shuttle 10 in a measurement part (measurement chamber 60 in the said embodiment).

In the above-described embodiment, the case where a pair of exposure units 310 are accommodated in the vacuum chamber 300 _i is illustrated. However, the present invention is not limited to this. One exposure unit 310 is included in one vacuum chamber, or Three or more may be accommodated. In the above embodiment, the case where the exposure system 1000 includes the five exposure chambers 301 _i and the one measurement chamber 60 has been described. However, at least one exposure chamber is sufficient. Further, the measuring chamber 60 the chamber 300 _1, which is formed therein is has been assumed to be a part of two rows of chambers consisting of the three chambers, the chamber 300 ₁ is not necessarily a part of the two rows of chambers It does not have to be configured, and the installation location is not limited. Moreover, it is not necessary to provide all of the two rows of chambers ₃₀₀ 1 to 300 ₃ and ₃₀₀ 4 to 300 _6, two chambers 300 ₄ adjacent example the chamber 300 ₁ adjacent to C / D9000 to the first control rack 200 Only may be provided.

In the above embodiment, the case where the second control rack 500 is provided in addition to the first control rack 200 has been described. However, the second control rack 500 is not necessarily provided. When the second control rack 500 is not provided, the utility supplied from the lower side of the floor surface F through the wiring and piping by the first control rack 200 is supplied to each of the chambers 300 _{1 to} 300 ₆ from above. It is desirable to distribute.
The number of chambers may be _{two (} chambers 300 ₁ and 300 ₂₎ . In this case, the second control rack 500 may be provided above the chambers 300 ₁ and 300 ₂ .

In the above embodiment, the case where the entire exposure unit 310 is accommodated in each of the vacuum chambers 300 _{2 to} 300 ₆ has been described. However, the present invention is not limited to this, and the electron beam irradiation device 330 of the exposure unit 310 is described. A portion excluding the lower end of the lens barrel 331 may be exposed to the outside of each of the vacuum chambers 300 _{2 to} 300 ₆ .

  In the above-described embodiment, the electron beam irradiation device 330 is integrated with the metrology frame 340 and is supported by being suspended from the top plate (ceiling wall) of the vacuum chamber via the three suspension support mechanisms 350a, 350b, and 350c. However, the present invention is not limited to this, and the electron beam irradiation device 330 may be supported by a floor-standing body.

In the above embodiment, the wafer before exposure and the wafer that has been exposed are both transported between all the vacuum chambers 300 _{2 to} 300 ₆ and the measurement chamber 60 together with the shuttle 10. However, the present invention is not limited to this, and all the vacuum chambers 300 ₂ to 300 are formed by a wafer transfer system including a horizontal articulated robot that moves a wafer before exposure and an exposed wafer alone along the movement path in the space SP. 300 ₆ and may be transported to and from the measurement chamber 60. In this case, in order to enable not only the exposure of the first layer on the wafer but also the exposure of the second and subsequent layers, the alignment mark is detected by the electron beam irradiation device 330 inside the exposure chamber 301 _i. It is necessary to arrange an apparatus for performing pre-measurement on the wafer to make it possible. In both cases where the wafer is transported integrally with the shuttle and when the wafer is transported alone, the above-mentioned space SP in which the wafer is transported and a part of the measurement chamber 60 communicating with the space SP are a vacuum chamber. You may comprise so that a low vacuum state with a low degree of vacuum compared with the inside of this can be set. When loading wafers (and shuttles) from the atmosphere into the load lock chamber, it is necessary to evacuate the load lock chamber in as short a time as possible until it becomes as high as the vacuum chamber. The environment in which the wafer (and the shuttle) is placed changes from atmospheric pressure to high vacuum, and the wafer shrinks due to a temperature drop. On the other hand, when a wafer (and shuttle) is carried into the load lock chamber from a low vacuum space, the rate of temperature decrease is reduced, and the shrinkage of the wafer due to the temperature decrease is reduced.

In the above-described embodiment, the case where the wafer is transported integrally with the shuttle 10 between the measurement chamber 60 and each exposure chamber 301 _i has been described. Even in an exposure apparatus that holds the holding member mechanically on the fine movement stage 332b and transports the wafer independently, the position information of the holding member in the direction of, for example, 6 degrees of freedom is measured by the encoder system in the same manner as in the above embodiment. It is also good to do. In this case, an encoder system having the same configuration as the first measurement system 20 of the above embodiment may be used. In this case, since the holding member is not conveyed, a head portion may be provided on the holding member side and a grating plate may be provided so that the head portion can face the outside of the holding member.

  It is not always necessary to return the shuttle that holds the exposed wafer to the measurement chamber 60. For example, a wafer carry-out unit may be provided separately from the measurement chamber 60, and the wafer may be removed from the shuttle at the wafer carry-out unit.

  In the above embodiment, the case where the fine movement stage 332b is movable in the direction of six degrees of freedom with respect to the coarse movement stage 332a has been described. However, the present invention is not limited to this, and the fine movement stage is movable only in the XY plane. May be. In this case, the first measurement system 20 and the second measurement system 25 that measure the position information of the fine movement stage may also be able to measure the position information regarding the three degrees of freedom direction in the XY plane.

  In the above-described embodiment, the first measurement system 20 performs redundant measurement for each direction in the 6-degree-of-freedom direction, and based on the average of the two position information obtained for each direction, the fine movement stage in each direction. However, the position of the fine movement stage in each direction is determined based on the average of three or more pieces of position information. It is good also as what asks for. Alternatively, redundant measurement may be performed only in a part of the six degrees of freedom direction, for example, in the three degrees of freedom direction in the XY plane, or redundant measurement may not be performed in any direction.

  In addition, although the said embodiment demonstrated the case where a target was a wafer for semiconductor element manufacture, the exposure system 1000 which concerns on this embodiment forms a fine pattern on a glass substrate, and manufactures a mask. Can also be suitably applied. In the above embodiment, the electron beam exposure system 1000 that uses an electron beam as a charged particle beam has been described. However, the above embodiment is also applied to an exposure apparatus that uses an ion beam or the like as a charged particle beam for exposure. can do.

  As described above, the exposure system according to the present invention is suitable for use in a lithography process in manufacturing an electronic device such as a semiconductor element.

DESCRIPTION OF SYMBOLS 10 ... Shuttle, 12 ... Triangular pyramid groove member, 14 ... Ball, 20 ... 1st measurement system, 25 ... 2nd measurement system, 30 ... Measurement stage apparatus, 32 ... Pin, 34 ... Drive system, 38 ... Measurement stage interferometer , 60 ... measurement chamber, 62 ... measurement chamber transport system, 65 ... measurement section, 70 ... shuttle transport system, 300 ₂ , 300 ₃ , 300 ₄ , 300 ₅ , 300 ₆ ... vacuum chamber, 301 _i ... exposure chamber, 302 ... Load lock chamber, 302b ... Air side gate valve, 302c ... Vacuum side gate valve, 304 ... Load lock chamber, 310 ... Exposure unit, 320 ... Stage device, 322 ... Coarse / fine motion stage, 322a ... Coarse motion stage, 322b ... Fine motion stage 330 ... Electron beam irradiation device, 350a, 350b, 350c ... Suspension support mechanism, 351 ... Anti-vibration pad, 352 ... Wire, 53 ... Positioning device, 380 ... Exposure control device, 1000 ... Exposure system, 9000 ... C / D, AF ... Surface position detection device, ALG ... Alignment detection system, F ... Floor surface, SP ... Space, ST ... Measurement stage, TB ... Measurement table, W, W ₀ , W ₁ ... wafer.

Claims (20)

An exposure system for exposing a target coated with a sensitive agent with a charged particle beam,
A first chamber in which a measurement chamber for pre-measuring the target before exposure held by the first holding member is formed;
A second chamber in which an exposure chamber for exposing the target held by a second holding member different from the first holding member with the charged particle beam is formed;
The first holding member holding the target for which the preliminary measurement has been completed is transferred from the first chamber into the second chamber via the load lock chamber, and then the exposure is completed from the second chamber. An exposure system comprising: a transfer system that transfers the second holding member that holds the target through the load lock chamber.   The transport system transports the second holding member that holds the target for which exposure has been completed to either the upper side or the lower side of the first holding member that holds the target for which the preliminary measurement has been completed. The exposure system according to claim 1.   The transfer system moves the first holding member and the second holding member upward or downward, and then transfers the first holding member to an exposure position by the charged particle beam. The exposure system according to claim 2, wherein the holding member is conveyed to the load lock chamber.   4. The transport system according to claim 3, wherein the transport system moves the first holding member to one of the upper and lower sides together with the second holding member after transporting the first holding member to the other upper or lower side with respect to the surface including the exposure position. Exposure system. 5. The transfer system according to claim 1, wherein the transfer system transfers the second holding member that holds the target after the exposure from the second chamber to the first chamber via the load lock chamber. The exposure system according to one item. A measurement device provided in the measurement chamber for pre-measuring the target before exposure;
A charged particle beam optical system that is provided in the exposure chamber and irradiates the target with the charged particle beam;
The measurement device includes a relative positional relationship between the target held by the first holding member and the first holding member within a predetermined plane intersecting the optical axis of the charged particle beam optical system, and the first holding. The exposure system according to any one of claims 1 to 4, wherein at least one of surface shape information of the target held by a member is measured.   The exposure system according to claim 6, wherein the measurement chamber further includes a transport member capable of transporting the first holding member holding the target separately and the target and the first holding member.   The measurement apparatus further includes a measurement stage apparatus having a measurement stage movable within a predetermined plane, and a measurement table mounted on the measurement stage and detachably mounted with the first holding member. The exposure system according to claim 5 or 6.   The exposure system according to claim 8, wherein the first holding member is attached to the measurement table via a kinematic coupling. The measurement apparatus includes a measurement stage position measurement system capable of measuring position information within the predetermined surface of the measurement stage or the measurement table, a mark on the first holding member mounted on the measurement table, and the holding member A mark detection system capable of detecting a mark formed on the target held by
The measurement table is driven to move the target, and the position information measured by the measurement stage position measurement system and the detection result of the mark detection system are used to hold the first holding member. The exposure system according to claim 8 or 9, wherein position information of the target is obtained. The measurement device includes a surface position detection system capable of detecting surface position information of the target,
The target surface shape information is obtained based on the position information measured by the measurement stage position measurement system and the detection result of the surface position detection system while driving the measurement table and moving the target. Item 11. The exposure system according to Item 10.   The measurement stage device further includes a load / unload device that cooperates with the transport member to load the target onto the first holding member and unload the target from the second holding member. Item 12. The exposure system according to Item 11. A plurality of holes are formed in the measurement table,
The load / unload device is fixed on the stage and individually inserted into the plurality of holes of the measurement table and extends in a direction parallel to the optical axis, and the plurality of pins. The exposure system according to claim 9, further comprising: a driving mechanism that drives the table in a predetermined stroke range in a direction parallel to the optical axis.   The exposure system according to claim 1, wherein the measurement chamber is provided with a storage unit capable of storing a plurality of the first holding members.   The exposure system according to claim 14, wherein the storage unit has a temperature adjustment function of adjusting the temperature of the holding member being stored. In the exposure chamber,
An exposure stage apparatus comprising: a first stage movable within the predetermined plane; and a second stage mounted on the first stage and detachably mounted with the second holding member;
A holding member position measurement system capable of measuring position information of the second holding member mounted on the second stage is provided;
Based on the position information measured by the holding member position measurement system, the target held by the second holding member by driving the second stage on which the second holding member is mounted is set in the predetermined plane. The exposure system according to any one of claims 5 to 15, further comprising a control system that performs exposure with the charged particle beam while being driven at a low speed. The exposure chamber is provided with a second stage position measurement system capable of measuring position information of the second stage,
Based on the position information measured by the second stage position measurement system, the control system is configured to operate the second stage even when the first holding member or the second holding member is not attached to the second stage. The exposure system according to claim 13, wherein the position of the stage is controllable.   The exposure system according to claim 16 or 17, wherein the first holding member or the second holding member is mounted on the second stage via a kinematic coupling. An exchange method for exchanging a target mounted on a table in a vacuum chamber provided with a load lock chamber,
Carrying the first holding member holding the target before exposure into the load lock chamber;
Closing the atmosphere side gate valve of the load lock chamber and evacuating the load lock chamber;
After the load lock chamber is in a predetermined vacuum state, the vacuum side gate valve of the load lock chamber is opened, and the first holding member holding the target is carried into a predetermined position in the vacuum chamber; ,
After carrying in to the predetermined position, the first holding member holding the target is moved downward or upward by a predetermined distance to stand by at the first standby position, and a second holding member holding the exposed target is provided on the table. To the predetermined position from,
Moving the first holding member and the second holding member upward or downward by a predetermined distance to position the second holding member to the second standby position and to position the first holding member to the predetermined position. When,
Carrying the first holding member in the predetermined position onto the table, and starting exposure of the target of the first holding member;
Positioning the second holding member waiting at the second standby position before and after the start of exposure at the predetermined position;
Carrying the second holding member in the predetermined position into the load lock chamber, and closing a vacuum side gate valve of the load lock chamber;
An exchange method including: opening a gate valve on the atmosphere side of the load lock chamber, and carrying the second holding member out of the load lock chamber. Prior to carrying the first holding member holding the target into the load lock chamber,
Conveying the first holding member holding the target to the front of the load lock chamber;
The exchange method according to claim 19, further comprising: opening the gate valve when the atmosphere side gate valve of the load lock chamber is closed.

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