TW201834276A - Thermoelectric conversion device having insulating diamond-like film, method for making the same and thermoelectric conversion module - Google Patents

Abstract

The invention relates to a thermoelectric conversion device having insulating diamond-like film. The thermoelectric conversion device includes a first aluminum alloy plate, a second aluminum alloy plate, a first insulating diamond-like film and a second insulating diamond-like film coated on the first aluminum alloy plate and the second aluminum alloy plate separately, a first logic metallic wiring layer and a second logic metallic wiring layer formed on the first insulating diamond-like film and the second insulating diamond-like film separately, and plural of p-type semiconductors and n-type semiconductors arranged alternately between the first logic metallic wiring layer and the second logic metallic wiring layer. Method for making thermoelectric conversion device having insulating diamond-like film and a thermoelectric conversion module are also disclosed.

Description

Thermoelectric conversion element with insulating diamond film layer, manufacturing method thereof and thermoelectric conversion module

The present invention relates to a thermoelectric conversion element, and more particularly to a thermoelectric conversion element having an insulating diamond film layer.

A thermoelectric module device is an element having a mutual conversion characteristic between heat and electricity. Due to its thermoelectric conversion characteristics, it has two fields of application of refrigeration/heating and power generation. If the thermoelectric conversion element is energized to cause endothermic and exothermic phenomena (called Peltier Effect) at both ends of the element, it can be applied to the field of refrigeration or heating. If the two ends of the thermoelectric conversion element are respectively at different temperatures, the thermoelectric conversion element can output direct current (referred to as Seebeck Effect), and thus can be applied to the field of power generation technology.

However, at present, the power generated by various energy conversion equipments is only used under 40% of the original energy (including nuclear energy) and is actually used or converted into electrical energy. The remaining 60% are again dissipated into the atmosphere in the form of waste heat or waste energy. in. Such a large amount of energy is ineffective by the consumption cycle, which also exacerbates the greenhouse effect, where plant heat rejection should be the largest source of waste heat energy. At present, the conversion efficiency of thermoelectric components is about 10% to 15%, which is similar to solar energy; the waste heat of geothermal springs, incineration plants, chemical plants, smelters, kilns and steam engine engines is the most potential of thermoelectric materials. The application, if the bottleneck of low conversion efficiency can be overcome in the future, there is much to be done. If more than one-quarter of the waste heat (below 120 °C) can be recovered, the burden of natural energy consumption and environmental impact can be greatly reduced. .

Thermoelectric materials are basically made of semiconductor materials, which can convert "hot" and "electricity";"P ₂ Te _{3 -} Sb ₂ Te ₃ " and "N type bismuth (Bi _{2 )} Te _{3 -} Bi ₂ Se ₃ )" is the two most commonly used materials. The principle of power generation of thermoelectric materials is to use "temperature difference". When a circuit composed of two different metals is used, if the temperature of the junction of the two metals is different, a temperature difference electromotive force is generated in the circuit. This is the Seebeck Effect. N/P semiconductors have different free electron densities. When two different metal conductors are in contact with each other, electrons on the contact surface diffuse to eliminate the difference in electron density. The diffusion rate of electrons is proportional to the temperature of the contact zone, so that by maintaining the temperature difference between the two metals, the electrons can continue to diffuse and form a stable voltage at the other two ends of the two metals. After the N-type semiconductor material is heated, the electrons on it will become active and will be released to the low temperature of the P-type semiconductor material. The migration phenomenon of this electron is called electric current or current; the P-type and N-type semiconductor are arranged through logic. The circuit is integrated to form a loop. If the temperature difference is generated at both ends of the P/N material, the high temperature, high degree of freedom, and high density electrons on the semiconductor will flow to the low temperature, low degree of freedom, and low electron density materials to supplement their electronic positions. The number, in this way, will produce a potential difference and current; on the other hand, the principle of thermoelectricity is "reversed", and the current is given to it, and the semiconductor electrons and the hole can be run to the same end, generating heat absorption and heat release. The temperature difference of the phenomenon extends to the cooling heater. In other words, thermoelectric temperature difference power generation and electric heating refrigeration are integrated on both sides. The former is to apply a temperature difference to generate current, and the latter is to apply a current to generate a temperature difference between heat absorption and release.

Figure 1 is a cross-sectional view showing a conventional thermoelectric conversion element. The conventional thermoelectric conversion element 10 generally comprises a block-shaped P-type thermoelectric material 114, an N-type thermoelectric material 116, an upper solder layer 110, a lower solder layer 112, an upper conductive metal layer 106, a lower conductive metal layer 108, and an electrical insulation. A substrate (for example, Al 2 O 3 ) 102 and a lower substrate (for example, Al 2 O 3 ) 104 are formed. As shown in FIG. 1, the P-type thermoelectric material 114 and the N-type thermoelectric material 116 of the conventional thermoelectric conversion element are generally upright, and the P-type thermoelectric material 114 and the N-type thermoelectric material are used by the upper conductive metal layer 106 and the lower conductive metal layer 108. 116 connections. Taking the thermoelectric cooling application as an example, the flow direction of the input direct current in the P-type thermoelectric material 114 and the N-type thermoelectric material 116 is parallel to the heat transfer direction of the conversion element, and the thermoelectric cooling element generates a temperature difference and a heat absorption and discharge heat in the upper and lower portions, that is, When the current flows from the N-type semiconductor material to the P-type semiconductor material, an endothermic phenomenon occurs. For this reason, the periphery is cooled, and when the current is transmitted from the P-type region to the N-type region through the logic line, the originally absorbed heat is used. And the resistance heat is released into the air or transmitted to the heat dissipating component, so the periphery is heated, which is an exothermic phenomenon, that is, heat generation. In the case of temperature difference power generation, the thermoelectric conversion element temperature difference and the heat flow direction are also parallel to the current direction generated in the thermoelectric material. The upper substrate 102 and the lower substrate 104 of the conventional thermoelectric conversion element are ceramic sheets. Since the thermal conductivity of the ceramic sheet is too low (T/C 30 W/mK or less), the heat generated by the thermoelectric conversion element cannot be quickly transmitted through the ceramic sheet. When the heat sink is applied to other heat sinks, the temperature of the thermoelectric conversion element cannot be lowered, so that the conversion efficiency of the N/P type Bi2Te3 material is as low as 8% or less of the overall efficiency, and the characteristics cannot be exhibited.

In view of the above, the inventors of the present invention have made an effort to improve and solve the above-mentioned shortcomings, and have devoted themselves to research and cooperate with the theoretical application of thermodynamics, and have proposed a present invention which is reasonable in design and effective in improving the above-mentioned defects.

It is an object of the present invention to provide a thermoelectric conversion element having an insulating diamond film layer such that the thermoelectric conversion element can be quickly conducted to other heat guiding bodies.

In order to achieve the above object, the present invention is a thermoelectric conversion element having an insulating diamond film layer, comprising a first aluminum alloy plate and a second aluminum alloy plate; respectively formed on the first aluminum alloy plate and the second aluminum alloy a first insulating type diamond film layer and a second insulating type diamond film layer on the board; forming a first metal logic circuit layer and a second metal logic line respectively formed on the first insulating type diamond film layer, the second insulating type diamond film layer a plurality of P-type semiconductors and a plurality of N-type semiconductors interposed between the first metal logic layer and the second metal logic layer, wherein the first aluminum alloy plate and the second aluminum alloy plate correspond to each other Located on opposite sides of the P-type semiconductors and the N-type semiconductors.

Another object of the present invention is to provide a method for producing a thermoelectric conversion element having an insulating diamond film layer to complete a thermoelectric conversion element having a high thermal conductivity.

In order to achieve the above object, the present invention is a method of manufacturing a thermoelectric conversion element having an insulating diamond film layer, the steps comprising: a) providing a first aluminum alloy plate and a second aluminum alloy plate; b) Forming a first insulating diamond film layer on an aluminum alloy plate, and forming a second insulating diamond film layer on the second aluminum alloy plate; c) forming a first metal logic circuit layer on the first insulating diamond film layer, Forming a second metal logic layer on the second insulating diamond film layer; and d) providing a plurality of P-type semiconductors and a plurality of N-type semiconductors alternately arranged and fixed to the first metal logic layer and the second metal logic Between the circuit layers.

A further object of the present invention is to provide a thermoelectric conversion module comprising: laminating a refrigerating wafer on a thermoelectric power generation wafer, so that a heat source of the exothermic end of the refrigerating wafer is absorbed by the thermoelectric power generation chip, and can be converted into micro electric energy. , used again.

In order to achieve the above object, the present invention is a thermoelectric conversion module comprising: a uniform cold wafer having a cold end surface and a hot end surface, such as the aforementioned thermoelectric conversion element having an insulating diamond film layer; a thermoelectric power generation chip having a hot end and a cold end, such as the aforementioned thermoelectric conversion element having an insulating diamond film layer; and a heat dissipating device, wherein the hot end surface of the refrigerating wafer is attached to the hot end of the thermoelectric power generation chip The heat sink is attached to the cold end of the thermoelectric power generation chip.

Compared with the prior art, the thermoelectric conversion element of the present invention replaces a conventional ceramic sheet with an aluminum alloy plate having an insulating diamond film layer, and the thermal conductivity of the aluminum alloy and the insulating diamond film layer (300 to 900 W/ mK) is much larger than the thermal conductivity of the ceramic sheet (up to 30 W/mK). Therefore, the thermoelectric conversion element of the present invention can rapidly conduct cold (heat) to other heat-conducting components or objects to continuously reduce the inside of the thermoelectric conversion element. The temperature of the N/P type material and the desired cooling or heating temperature. In addition, in order to make the ceramic sheet have better heat conduction penetration, it must be as thin as possible (T 0.5 mm or less), but its characteristics become brittle, so it is not easy to make a large size (the maximum size of the base material) :T 0.5mm*L 150mm*H 150mm), the size of the thermoelectric conversion element is limited to this non-tough material, and it cannot be assembled in large size and connected in series. This is easy to break due to assembly and cannot be easily and directly The use of screws to tightly engage the heat sink allows the power generation performance and conversion power to be increased and the application to grow.

The detailed description and technical content of the present invention are set forth in the accompanying drawings.

2 and 3 are a cross-sectional view and a flowchart of a method of manufacturing a thermoelectric conversion element according to a first embodiment of the present invention, respectively. As shown in FIG. 2, the thermoelectric conversion element 20 includes a first aluminum alloy plate 202 and a second aluminum alloy plate 204, a first insulating diamond film layer 206, and a second insulating diamond film layer 208, a first The metal logic layer 210 and a second metal logic layer 212, a first solder layer 214 and a second solder layer 216, a plurality of P-type semiconductors 218, and a plurality of N-type semiconductors 220. The first embodiment shown in Fig. 2 is such that the end faces of the thermoelectric conversion element 20 are at different temperatures, for example, the first aluminum alloy plate 202 is a heated end (for example, the heated end temperature is 70 ° C), and the second aluminum alloy plate 204 is a cold end. (For example, the cold junction temperature to be maintained is 30 ° C), the temperature difference of 40 ° C can make the thermoelectric conversion element output DC-2.2V * 130mA DC power, so it can be applied to the field of power generation technology, and currently only this component can be At low waste energy temperatures (below 100 ° C), such high energy is converted and the electrical work that can be utilized is output. As shown in FIG. 2, the first aluminum alloy plate 202 has two semi-blind holes 2022, 2022 and a second aluminum alloy plate with two semi-blind holes 2042, 2042 for fixing the first aluminum alloy plate and the second. Aluminum alloy panels are combined with other objects. The half blind hole 2022 and the half blind hole 2042 may be replaced by through holes, respectively, as needed.

When the thermoelectric conversion element 20 is produced, first, a first aluminum alloy plate 202 and a second aluminum alloy plate 204 are provided (step a). The first aluminum alloy plate 202 and the second aluminum alloy plate 204 may be aluminum carbon tantalum alloy, aluminum magnesium alloy, aluminum magnesium alloy, aluminum copper alloy or aluminum zinc alloy, and the thermal conductivity is about 180-260 W/mK, so the phase It has higher heat transfer capacity than general ceramics.

Next, a first insulating type diamond film layer 206 is formed on the first aluminum alloy plate 202, and a second insulating type diamond film layer 208 is formed on the second aluminum alloy plate 204 (step b), the first insulation. The diamond-like film layer 206 and the second insulating diamond-like film layer 208 can be fabricated using a Plasma Assisted Chemical Vapor Deposition (PECVD) process. The insulating diamond film has a thermal conductivity of about 350-880 W/mK. The ratio and thickness of the deposited by Sp2 and Sp3 determine the thermal conductivity. For example, (composition of 30% Sp2 and 70% Sp3), the thermal conductivity is 1 μm thickness. 475W/mK). Insulated diamond-like films have more obvious and superior heat-dissipating ability than materials such as tantalum carbide, aluminum oxide, tantalum oxide, aluminum nitride or tantalum nitride, and thus are more suitable for manufacturing thermoelectric conversion elements with high thermal conductivity.

Thereafter, a first metal logic layer 210 is formed on the first insulating type diamond film layer 206, and a second metal logic layer 212 is formed on the second insulating type diamond film layer 208 (step c). In actual implementation, the first metal logic layer 210 includes a plurality of first metal conductors 210a arranged at intervals, and the second metal logic layer 212 includes a plurality of second metal conductors 212a arranged at intervals, and the first metal conductors 210a and the second metal conductor 212a are arranged in a staggered manner.

In addition, a first solder layer 214 is coated on the first metal logic layer 210, and a second solder layer 216 is coated on the second metal logic layer 212 (step c1). Moreover, a plurality of P-type semiconductors 218 and a plurality of N-type semiconductors 220 are arranged and arranged in the first metal logic layer 210 and the second metal logic layer 212 (the first solder layer 214 and the second solder) Between layers 216) (step d).

The first solder layer 214 is coated on the first metal logic layer 210, and the second solder layer 216 is coated on the second metal logic layer 212, and the first solder layer 214 is to be melted. After the second solder layer 216, the P-type semiconductor 218 and the N-type semiconductor 220 are bonded to the first solder layer 214 and the second solder layer 216 (step d1). Then, the first aluminum alloy plate 202 The second aluminum alloy plate 204 is positioned on the opposite side of the P-type semiconductor 218 and the N-type semiconductors 220 to be attached to the other conductive heat dissipation group as a conductive surface.

Fig. 4 is a cross-sectional view showing the combination of a thermoelectric conversion element, a thermal interface and a cold interface according to a first embodiment of the present invention. As shown in FIG. 4, the thermoelectric conversion element 20 of the first embodiment fixes the thermal interface 41 on the first aluminum alloy plate 202 by screws 2023, 2023 and semi-blind holes 2022, 2022, by means of screws 2043, 2043 and a half. The blind holes 2042, 2042 secure the cold interface 42 to the second aluminum alloy plate 204.

Fig. 5 is a sectional view showing the combination of a thermoelectric conversion element according to a second embodiment of the present invention. As shown in FIG. 5, the thermoelectric conversion element 50 includes a first aluminum alloy plate 502 and a second aluminum alloy plate 504, a first insulating diamond film layer 506, and a second insulating diamond film layer 508. The metal logic layer 510 and a second metal logic layer 512, a first solder layer 514 and a second solder layer 516, a plurality of P-type semiconductors 518, and a plurality of N-type semiconductors 520. The second embodiment shown in FIG. 5 has the same structure as the first embodiment shown in FIG. 2, and the difference is that the second embodiment shown in FIG. 5 energizes the thermoelectric conversion element to cause heat absorption and heat release at both ends of the element. , can be applied in the field of refrigeration or heating technology.

Fig. 6 is a sectional view showing the assembly of a thermoelectric conversion module according to a third embodiment of the present invention. As shown in FIG. 6, the thermoelectric conversion module includes: a uniform cold chip, a thermoelectric power generation chip, and a heat sink 66. The refrigerant chip is a thermoelectric conversion element 50 as shown in FIG. 5, and the refrigerant wafer has a cold end surface 61 and a hot end surface 62. The thermoelectric power generation chip is the thermoelectric conversion element 20 of FIG. 2, and the thermoelectric power generation chip has a hot end 63 and a cold end 64. The hot end face 62 of the cooled wafer is attached to the hot end 63 of the thermoelectric wafer by a thermal adhesive 602. A heat sink 66, such as a microfan motor, is attached to the cold end 64 of the thermoelectric wafer. The heat source generated by the refrigerant chip is used to supply the heat source required for the thermoelectric power generation chip, and the electric energy generated by the heat supply is supplied to the fan motor fixed to the lower portion to achieve the self-control temperature performance. When the temperature difference is 10 °C, the electric power generated is DC-0.6V*10mA, which can not drive any micro-fan motor. When the temperature difference reaches 25°C, the fan motor must be started. At this time, the thermoelectric wafer can also generate DC. -1.7V*10mA electric work, under this power, it can drive the DC-1.5V micro fan motor to make the heat convection of the air soaked, and the temperature difference under the thermal equilibrium state will return to the temperature difference below 10 °C, which is also natural. The fan stops and it repeats its work but does not require any additional power to the fan motor.

Table 1 below shows the performance parameters of the single thermoelectric conversion element of the present invention for temperature difference power generation. The length*width* height of the thermoelectric conversion element is 80 mm*80 mm*4.9 mm. According to the data in Table 1, it is drawn into Figure 7. Fig. 7 is a graph showing changes in current and voltage with temperature difference of a single thermoelectric conversion element of the present invention for temperature difference power generation.

Table I

The above description is only one of the embodiments of the present invention, and is not intended to limit the scope of the invention, and other equivalent variations of the patent spirit of the present invention are all within the scope of the invention.

10‧‧‧ Thermoelectric conversion elements

102‧‧‧Upper substrate

104‧‧‧lower substrate

106‧‧‧Upper conductive metal layer

108‧‧‧Under conductive metal layer

110‧‧‧Upper solder layer

112‧‧‧low solder layer

114‧‧‧P type thermoelectric materials

116‧‧‧N type thermoelectric materials

20‧‧‧ Thermoelectric conversion elements

202‧‧‧First aluminum alloy plate

204‧‧‧Second aluminum alloy plate

206‧‧‧First insulating diamond film

208‧‧‧Second insulating diamond film

210‧‧‧First metal logic layer

212‧‧‧Second metal logic layer

214‧‧‧First solder layer

216‧‧‧Second solder layer

218‧‧‧P-type semiconductor

220‧‧‧N type semiconductor

50‧‧‧ Thermoelectric conversion elements

502‧‧‧First aluminum alloy plate

504‧‧‧Second aluminum alloy plate

506‧‧‧First insulating diamond film

508‧‧‧Second insulating diamond film

510‧‧‧First metal logic layer

512‧‧‧Second metal logic layer

514‧‧‧First solder layer

516‧‧‧Second solder layer

518‧‧‧P-type semiconductor

520‧‧‧N type semiconductor

a~d‧‧‧step

Figure 1 is a cross-sectional view showing a conventional thermoelectric conversion element.

Fig. 2 is a sectional view showing the combination of a thermoelectric conversion element according to a first embodiment of the present invention.

Fig. 3 is a flow chart showing a method of manufacturing the thermoelectric conversion element of the first embodiment of the present invention.

Figure 4 is a cross-sectional view showing the combination of a thermoelectric conversion element and a first embodiment of the present invention.

Fig. 5 is a sectional view showing the combination of a thermoelectric conversion element according to a second embodiment of the present invention.

Fig. 6 is a sectional view showing the assembly of a thermoelectric conversion module according to a third embodiment of the present invention.

Fig. 7 is a graph showing changes in current and voltage with temperature difference of a single thermoelectric conversion element of the present invention for temperature difference power generation.

Claims (10)

A thermoelectric conversion element having an insulating diamond film layer, comprising: a first aluminum alloy plate and a second aluminum alloy plate; a first insulating diamond film layer and a second insulating diamond film layer, the first An insulating diamond film layer is formed on the first aluminum alloy plate, the second insulating diamond film layer is formed on the second aluminum alloy plate; a first metal logic circuit layer and a second metal logic circuit layer, the first a metal logic circuit layer is formed on the first insulating type diamond film layer, the second metal logic circuit layer is formed on the second insulating type diamond film layer; and a plurality of P-type semiconductors and a plurality of N-type semiconductors are alternately arranged, And being fixed between the first metal logic layer and the second metal logic layer, wherein the first aluminum alloy plate and the second aluminum alloy plate are corresponding to the P-type semiconductors and the N-type semiconductors The opposite side. The thermoelectric conversion element having the insulating diamond film layer of claim 1 further comprising a first solder layer and a second solder layer, wherein the first solder layer is formed on the first metal logic layer A second solder layer is formed on the second metal logic layer, and the P-type semiconductor and the N-type semiconductor are bonded to the first solder layer and the second solder layer. The thermoelectric conversion element of claim 1, wherein the first aluminum alloy plate and the second aluminum alloy plate are made of aluminum carbon copper alloy, aluminum manganese alloy, aluminum magnesium alloy, aluminum magnesium. Niobium alloy, aluminum copper alloy or aluminum zinc alloy. The thermoelectric conversion element of claim 1, wherein the first metal logic layer and the second metal logic layer are copper-nickel-gold eutectic lines, copper-nickel-tin eutectic lines, and nickel Silver eutectic lines, silver glue lines, carbon glue lines, copper glue lines, graphene lines or copper lines. The thermoelectric conversion element of claim 1, wherein the first aluminum alloy plate and the second aluminum alloy plate have at least one through hole or half blind hole. A method of manufacturing a thermoelectric conversion element having an insulating diamond film layer, comprising the steps of: a) providing a first aluminum alloy plate and a second aluminum alloy plate; b) forming a first insulating diamond on the first aluminum alloy plate a film layer, further forming a second insulating diamond film layer on the second aluminum alloy plate; c) forming a first metal logic circuit layer on the first insulating type diamond film layer, and forming a second insulating type diamond film layer a second metal logic layer; and d) providing a plurality of P-type semiconductors and a plurality of N-type semiconductors alternately disposed between the first metal logic layer and the second metal logic layer. The method for manufacturing a thermoelectric conversion element having an insulating diamond film layer according to claim 6, wherein the first insulating type diamond film layer and the second insulating type diamond film layer are plasma-assisted strong chemical vapor deposition Process production. The method for manufacturing a thermoelectric conversion element having an insulating diamond film layer according to claim 6, further comprising the step of: forming a first solder on the first metal logic layer by electroless deposition, coating or electroplating. And forming a second solder layer on the second metal logic layer by electroless deposition, coating or electroplating. The method for manufacturing a thermoelectric conversion element having an insulating diamond film layer according to claim 8, further comprising the step of d1) melting the first solder layer and the second solder layer, and combining the P-type semiconductor and the N-type semiconductor. On the first solder layer and the second solder layer. A thermoelectric conversion module comprising: a uniform cold wafer having a cold end face and a hot end face, such as a thermoelectric conversion element having an insulating diamond film layer of claim 1; a temperature difference having a hot end and a cold end A power generating chip, such as the thermoelectric conversion element having an insulating diamond film layer of claim 1, and a heat dissipating device, wherein a thermal end surface of the refrigerating wafer is attached to a hot end of the thermoelectric power generating chip, and the heat dissipating The device is attached to the cold end of the thermoelectric wafer.