JP2006066822A - Thermoelectric conversion device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To obtain a thermoelectric conversion device whose thermoelectric conversion coefficient can be elevated while holding electric insulation, by composing a joint so that a thin insulating film layer is formed on a metal substrate and heat resistance between the metal substrate and a thermoelectric element is reduced. <P>SOLUTION: In the thermoelectric conversion device, both sides of a plurality of thermoelectric elements 11 composed of p-types and n-types are joined with a high temperature side heat exchanger 14 and a low temperature side heat exchanger 16 through first electrode components 12 between the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16, respectively. The plurality of the thermoelectric element 11 are connected through the first electrode component 12 in series. On the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16, insulating film layers 21 each composed of an insulating material are formed at a positions opposed to the electrode components 12, and electrodes 22 joined with the first electrode components 12 are formed on surfaces of the insulating film layers 21. The thermoelectric conversion coefficient can be improved while holding the electric insulation. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a thermoelectric conversion device that can absorb heat and dissipate heat by flowing a direct current through a series circuit composed of an N-type thermoelectric element and a P-type thermoelectric element, and in particular, electrode members are interposed at both ends of the thermoelectric element. The present invention relates to a configuration of a pair of metal substrates that are bonded together.

  Conventionally, as this type of thermoelectric conversion device, for example, as shown in Patent Document 1, a plurality of P-type and N-type thermoelectric elements are alternately and electrically interposed between a pair of metal substrates with electrode members interposed therebetween. It is configured to be connected in series and bonded to the metal substrate.

  An insulating coating layer formed of a composite film made of a resin and an inorganic powder is integrally fixed to the metal substrate, and a plurality of thermoelectric elements are formed on the metal substrate. A heat conductive grease is interposed between the members and the members are joined. Thereby, the electrical insulation and thermal conductivity between the electrode member connected to the thermoelectric element and the metal substrate are improved (for example, refer to Patent Document 1).

In addition to the above, there is also an apparatus in which an insulating coating layer formed on a metal substrate is formed by spraying a ceramic insulating material such as alumina or zirconia (see, for example, Patent Document 2).
JP-A-11-274573 JP 11-340523 A

  However, according to Patent Document 1 and Patent Document 2, the heat conductive grease is configured to be joined between the insulating coating layer formed on the metal substrate and the electrode member by interposing a heat conductive grease. The thermal resistance in the conductive grease portion is larger than that of a metal material having a large thermal conductivity. That is, if the thermal resistance is large, there is a problem that the thermoelectric conversion efficiency of the thermoelectric conversion device is lowered.

  In addition, increasing the thickness of the insulating coating layer formed on the metal substrate improves the electrical insulation, but the thermal conductivity of one of them decreases, so in order to improve the thermal conductivity, the thickness of the insulating coating layer is reduced. It is desirable to make it as thin as possible.

  In view of the above, the object of the present invention is to form a thin insulating film layer on the metal substrate side, and to form a joint so that the thermal resistance is reduced between the metal substrate and the thermoelectric element. Accordingly, it is an object of the present invention to provide a thermoelectric conversion device capable of improving the thermoelectric conversion efficiency while ensuring electrical insulation.

In order to achieve the above object, the technical means according to claims 1 to 11 are employed. That is, in the invention described in claim 1, between the pair of metal substrates (14, 16) made of a metal material, both ends of a plurality of P-type and N-type thermoelectric elements (11) are respectively the first electrodes. Heat that is bonded to the metal substrate (14, 16) with the member (12) interposed, and absorbs and dissipates heat transferred from the first electrode member (12) to one of the metal substrates (14, 16). In the thermoelectric conversion device in which the exchange part (15) is disposed,
The plurality of thermoelectric elements (11) are connected in series via the first electrode member (12), and the metal substrate (14, 16) is opposed to the first electrode member (12). An insulating coating layer (21) made of an insulating material, and an electrode portion (22) bonded to the first electrode member (12) are formed on the surface of the insulating coating layer (21).

  According to the first aspect of the present invention, the insulating coating layer (21) and the electrode portion (22) are formed on the metal substrate (14, 16) side, and the electrode portion (22) and the first electrode member ( 12), the thermoelectric element (11) is joined to the thermoelectric element (11) by, for example, joining the electrode part (22) and the first electrode member (12) by soldering or the like. It becomes possible to reduce the thermal resistance between the metal substrates (14, 16).

  Moreover, since the required cross-sectional area of the electric current which flows between the thermoelectric elements (11) can be ensured by increasing the plate thickness of the first electrode member (12), it is formed on the surface of the insulating coating layer (21). The plate thickness of the electrode part (22) can be reduced. Thereby, while being able to ensure the electrical insulation between a thermoelectric element (11) and a metal substrate (14, 16), an insulating coating layer (21), this insulating coating layer (21), and each electrode part (12, 22). ) And the thermal resistance of the joint portion can be reduced. Therefore, the thermoelectric conversion efficiency of the entire apparatus can be improved.

  The invention according to claim 2 is characterized in that the first electrode member (12) and the electrode portion (22) are joined by soldering. According to invention of Claim 2, thermal resistance can be made extremely small rather than the prior art which joins an insulating film layer (21) and a 1st electrode member (12) through heat conductive grease. Thereby, the thermoelectric conversion efficiency of the whole apparatus can be improved.

  The invention according to claim 3 is characterized in that the electrode portion (22) formed on the metal substrate (14, 16) is formed thinner than the plate thickness of the first electrode member (12). . According to the invention described in claim 3, specifically, as shown in claim 4 or claim 5 described later, the thin electrode portion (22) is easily integrated with the surface of the insulating coating layer (21). Can be formed. Thereby, while being able to reduce manufacturing cost, the thermal resistance between an insulating coating layer (21) and an electrode part (22) can be made small.

  The invention according to claim 4 is characterized in that the electrode portion (22) is formed by printing a paste-like conductive material on the surface of the insulating coating layer (21) and then drying it. According to the fourth aspect of the present invention, the thin electrode portion (22) can be easily formed integrally on the surface of the insulating coating layer (21).

  The invention according to claim 5 is characterized in that the electrode portion (22) is formed by etching after bonding a conductive material to the surface of the insulating coating layer (21). According to invention of Claim 5, a thin electrode part (22) can be integrally formed in the surface of an insulating coating layer (21) easily.

  In the invention according to claim 6, the electrode portion (22) is at least 0.1 mm or less, whereas the plate thickness of the first electrode member (12) is about 0.1 to 0.5 mm. It is characterized in that it is formed with a thickness of. According to invention of Claim 6, even if an electrode part (22) is 0.1 mm or less, since a 1st electrode member (12) is joined to a thin electrode part (22) by soldering, There is no fusing defect even if a large current flows.

  In the invention according to claim 7, the insulating coating layer (21) formed on the metal substrate (14, 16) is formed by either diamond-like carbon coating or an aerosol deposition method made of alumina or aluminum nitride. It is characterized by being formed by. According to invention of Claim 7, these manufacturing methods can form the insulating coating layer (21) of a thin film with low heat resistance, maintaining especially high electrical insulation. Thereby, thermal resistance can be made small.

  The invention according to claim 8 is characterized in that the thickness of the insulating coating layer (21) is at least about 10 μm or less. According to invention of Claim 8, if it is a power supply for vehicles (DC12V, DC24V), for example, it can be comprised with this film thickness.

  In the invention according to claim 9, the insulating coating layer (21) formed on the metal substrate (14, 16) is formed by film formation of any one of ceramic paint, insulating electrodeposition coating, or insulating film. It is characterized by that. According to invention of Claim 9, these manufacturing methods can form an insulating film layer (21) thinly. Thereby, thermal resistance can be made small.

  The invention according to claim 10 is characterized in that the insulating coating layer (21) has a thickness of at least about 100 μm or less. According to the invention described in claim 10, for example, if it is a power source for vehicles (DC12V, DC24V), it can be configured with such a film thickness.

  In the invention described in claim 11, the plurality of thermoelectric elements (11) are integrally formed by arranging a plurality of P-type and N-type alternately in a substantially grid pattern on an insulating substrate (13) made of an insulating material. It is characterized by comprising. According to the eleventh aspect of the invention, the thermoelectric element (11), which is a minimal component, and the first electrode member (12) connected to the thermoelectric element (11) can be integrated with the insulating substrate (13), thereby improving the assemblability.

  In addition, the code | symbol in the bracket | parenthesis of each said means shows the correspondence with the specific means of embodiment mentioned later.

  Hereinafter, a thermoelectric conversion device 10 according to an embodiment of the present invention will be described with reference to FIGS. 1 and 2. FIG. 1 is a schematic diagram illustrating an overall configuration of a thermoelectric conversion device 10 according to the present embodiment, and FIG. 2 is an exploded schematic diagram illustrating a configuration of a main part of the thermoelectric conversion device 10. As shown in FIG. 1 and FIG. 2, the thermoelectric conversion device 10 according to the present embodiment includes a P type and an N type between a high temperature side heat exchanger 14 and a low temperature side heat exchanger 16 that are a pair of metal substrates. Both ends of the plurality of thermoelectric elements 11 are configured to be joined to the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 with the first electrode member 12 interposed therebetween.

  The plurality of thermoelectric elements 11 are integrally formed by arranging a plurality of P-type and N-type alternately in a substantially grid pattern on an insulating substrate 13 made of a flat insulating material (for example, PPS resin or LCP resin). ing. The thermoelectric element 11 is composed of P-type and N-type semiconductors made of Bi-Te compounds.

  And the 1st electrode member 12 is provided in the both ends of the several thermoelectric element 11 so that an electric current may flow into the adjacent thermoelectric element 11 in series. More specifically, the upper side of the thermoelectric element 11 is connected so that current flows from P-type to N-type, and the lower side of the thermoelectric element 11 is connected so that current flows from N-type to P-type.

  The first electrode member 12 is an electrode formed in a flat plate shape made of a conductive material such as a copper material, and has a plate thickness of, for example, about 0.1 to 0.5 mm. The thermoelectric element 11 It is formed so as to ensure the necessary cross-sectional area of the current flowing between them. Note that the thermoelectric element 11 side and the first electrode member 12 are integrally formed by applying a nickel plating to the electrode side on the thermoelectric element 11 side and then joining in advance by soldering.

  And the high temperature side heat exchanger 14 which is a metal substrate is provided in the side facing the electrode surface of the upper side 1st electrode member 12, and a metal substrate is provided in the side facing the electrode surface of the lower side 1st electrode member 12. The low temperature side heat exchanger 16 is provided. The high-temperature side heat exchanger 14 and the low-temperature side heat exchanger 16 are plate-like bodies that are large enough to arrange a plurality of thermoelectric elements 11, and have excellent thermal conductivity such as copper, aluminum, silver, and brass. It is made of material. And the fin member 15 which is a heat exchange part for absorbing and radiating the heat transferred by the first electrode member 12 is joined to one side.

  Here, the first electrode member 12 joined to the thermoelectric element 11 has a high temperature due to the Peltier effect of the upper first electrode member 12 constituting the PN junction. It is configured to transmit heat to the fin member 15 via the heat exchanger 14 and exchange heat with the cooling fluid.

  On the other hand, the lower first electrode member 12 constituting the NP junction is brought to a low temperature state due to the Peltier effect, so that this low temperature heat is transferred to the fin member 15 via the low temperature side heat exchanger 14 and covered. It is configured to exchange heat with the cooling fluid. That is, according to the amount of current flowing between the thermoelectric elements 11, the temperature of the first electrode member 12 at one end increases and the temperature of the first electrode member 12 at the other end decreases. The heat phenomenon is reversed.

  Incidentally, as this type of thermoelectric conversion device, for example, hot air is obtained by exchanging air as a cooling fluid on one high temperature side heat exchanger 14 side, and on the other low temperature side heat exchanger 16 side, For example, cold air can be obtained by heat exchange of air as a fluid to be cooled, so that it is used for cooling heat-generating components such as semiconductors and electrical components and for heating heating devices and the like.

  By the way, the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 of this embodiment are the insulating coating layer 21 which consists of an insulating material in the other side of the fin member 15, ie, the site | part facing the 1st electrode member 12. FIG. And the electrode part 22 joined to the 1st electrode member 12 on the surface of the insulating coating layer 21 is formed.

  Here, a method for forming the insulating coating layer 21 formed on the surfaces of the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 will be described. In the present embodiment, a thin insulating coating layer 21 is formed on the metal surface by a diamond-like carbon coating (DLC) method. In this diamond-like carbon coating (DLC) method, hydrocarbons are decomposed by an arc discharge plasma in a high vacuum, and ions and erection molecules in the plasma are hit against the surfaces of the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16. It is formed by that.

  According to this, the insulating coating layer 21 can be formed as a thin film having a thickness of about 1 to 10 μm. Incidentally, if the film thickness is about 10 μm, the thermal conductivity λ (W / mk) is about three times that of a typical alumina substrate having a thickness of about 1 mm and the thickness is 1/100. The resistance corresponds to about 1/300 of the alumina substrate. Therefore, the thermal resistance can be greatly reduced by forming the insulating coating layer 21 with the DLC film.

  The method for forming the insulating coating layer 21 is not limited to the diamond-like carbon coating (DLC) method described above. In addition, alumina (Al203) or aluminum nitride (AlN) is formed by the aerosol deposition method. May be. In addition to these, a ceramic paint (for example, silica-alumina-based liquid ceramics) may be applied by dipping and then dried to form a film.

  Furthermore, the film formation may be formed by forming a film by insulating electrodeposition coating or attaching an insulating film. However, in the case of ceramic coating, insulating electrodeposition coating, and insulating film, a film thickness of about 100 μm is required.

  Here, the aerosol deposition method is a method in which fine particles of an insulating material such as alumina (Al203) or aluminum nitride (AlN) having a submicron particle diameter are sprayed on a base material, and the high temperature side heat exchanger 14 is used at room temperature without sintering. And a film forming method of solidifying the surface of the low temperature side heat exchanger 16 to form a ceramic insulating film. According to this, it can be formed with a thin film having a film thickness of about 1 to 10 μm as in the DLC method.

  In this case, aluminum nitride (AlN) has a thermal conductivity λ (W / mk) of about 140 to 200 and alumina has a level of about 33, so that the thermal resistance can be extremely reduced as in the DLC method. Incidentally, in the case of insulating electrodeposition coating, the thermal conductivity λ (W / mk) is about 10, and in the case of an insulating film, it is about 0.6 to 12.

  Next, a method for forming the electrode portion 22 formed on the surface of the insulating coating layer 21 will be described. In the present embodiment, a plate made of a copper material is adhered to the insulating coating layer 21 with an adhesive film, and formed into an electrode shape by etching, or a paste-like conductive material is printed on the insulating coating layer 21. Then, the electrode portion 22 may be formed by drying. In addition, as for the plate | board thickness of the electrode part 22 at this time, it is desirable to form in the thin thickness of about 0.1 mm or less with respect to the plate | board thickness of the 1st electrode member 12 mentioned above about 0.1-0.5 mm.

  Thus, when the plate thickness of the electrode portion 22 is thin, the electrode portion 22 can be easily formed by the above-described forming method in the formation of the electrode portion 22 on the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16, and the manufacturing cost can be reduced. Can be the cheapest.

  The insulating coating layer 21 formed on the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 may be formed on the entire surface of the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16, but at least the high temperature side The side heat exchanger 14 and the low temperature side heat exchanger 16 may be formed at a position facing the first electrode member 12. Furthermore, the electrode portion 22 may be formed at a position facing the first electrode member 12 and having a size equal to or smaller than the electrode surface of the first electrode member 12.

  Next, a method of assembling the thermoelectric conversion device having the above configuration will be described. As shown in FIG. 2, the thermoelectric element 11 has a plurality of P-type and N-type alternately arranged in a substantially grid pattern in a substrate hole provided in the insulating substrate 13. The electrode member 12 is joined to form an integral body.

  Then, the pair of the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 previously formed the insulating coating layer 21 and the electrode portion 22 at a position facing the first electrode member 12 by any one of the methods described above. Thereafter, the fin member 15 is joined to the opposite surface of the insulating coating layer 21 by soldering to form an integral structure.

  Then, the thermoelectric element 11 is assembled between the integrated high-temperature side heat exchanger 14 and low-temperature side heat exchanger 16, and the joint surface between the electrode portion 22 and the first electrode member 12 is soldered. Join. Thereby, the adjacent thermoelectric elements 11 are connected in series, and the thermoelectric element 11 and the high temperature side heat exchanger 14 and the thermoelectric element 11 and the low temperature side heat exchanger 16 are electrically insulated by the insulating coating layer 21. .

  In addition, by joining the joining surfaces of the electrode portion 22 and the first electrode member 12 by soldering, the thermoelectric element 11 and the high temperature side heat exchanger 14 and the thermoelectric element 11 and the low temperature side heat exchanger 16 are configured. It becomes possible to make the thermal resistance in the joint surface of each electrode part 12 and 22 made small. As a result, the thermal resistance can be reduced, so that the thermoelectric conversion efficiency of the entire apparatus can be improved.

  According to the thermoelectric conversion device 10 of the above-described embodiment, the insulating coating layer 21 and the electrode part 22 are formed on the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 side, and the electrode part 22 and the first By joining the thermoelectric element 11 via the electrode member 12, for example, by joining the electrode portion 22 and the first electrode member 12 by soldering or the like, the thermoelectric element 11 and the high temperature side heat exchanger 14 and It becomes possible to reduce the thermal resistance between the low-temperature side heat exchanger 16.

  Further, by increasing the plate thickness of the first electrode member 12, it is possible to secure the necessary cross-sectional area of the current flowing between the thermoelectric elements 11, and thus the plate thickness of the electrode portion 22 formed on the surface of the insulating coating layer 21. Can be made thin. Thereby, while being able to ensure the electrical insulation between the thermoelectric element 11, the high temperature side heat exchanger 14, and the low temperature side heat exchanger 16, the insulating coating layer 21, this insulating coating layer 21, and each electrode part 12,22, The thermal resistance of the joint portion can be reduced. Therefore, the thermoelectric conversion efficiency of the entire apparatus can be improved.

  Further, the first electrode member 12 and the electrode portion 22 are joined by soldering, so that the insulating coating layer 21 and the first electrode member 12 are joined to each other by interposing a heat conductive grease. Thermal resistance can be made extremely small. Thereby, the thermoelectric conversion efficiency of the whole apparatus can be improved.

  Further, since the electrode portions 22 formed on the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 are formed thinner than the plate thickness of the first electrode member 12, the thin electrode portions 22 can be easily formed. Further, it can be integrally formed on the surface of the insulating coating layer 21. Thereby, while being able to reduce manufacturing cost, the thermal resistance between the insulating coating layer 21 and the electrode part 22 can be made small.

  The electrode portion 22 is formed by printing a paste-like conductive material on the surface of the insulating coating layer 21 and then drying it, so that the thin electrode portion 22 can be easily integrated with the surface of the insulating coating layer 21. Can be formed. In addition, a conductive material may be bonded to the surface of the insulating coating layer 21 and then formed by etching.

  Specifically, the electrode portion 22 has a thickness of at least 0.1 mm or less, whereas the thickness of the first electrode member 12 is about 0.1 to 0.5 mm. Therefore, even if the electrode part 22 is 0.1 mm or less, the first electrode member 12 is joined to the thin electrode part 22 by soldering, so there is no problem of fusing even if a large current flows.

  The insulating coating layer 21 formed on the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 is formed by film formation of either diamond-like carbon coating or an aerosol deposition method made of alumina or aluminum nitride. Therefore, these manufacturing methods can form a thin insulating coating layer 21 having a low thermal resistance while maintaining particularly high electrical insulation. Thereby, thermal resistance can be made small.

  In addition, since the insulating coating layer 21 is formed to have a film thickness of at least about 10 μm or less, for example, a vehicle power supply (DC12V, DC24V) can be configured with such a film thickness.

  In addition to the diamond-like carbon coating and the aerosol deposition method, it may be formed by any film formation of ceramic paint, insulating electrodeposition coating, or insulating film. However, in these manufacturing methods, the film thickness is formed to be at least about 100 μm or less and slightly thickened.

  In addition, a plurality of thermoelectric elements 11 are integrally arranged on an insulating substrate 13 made of an insulating material by alternately arranging a plurality of P-types and N-types in a substantially grid pattern. The assemblability can be improved because the element 11 and the first electrode member 12 connected to the element 11 can be integrated with the insulating substrate (13).

(Other embodiments)
In the above embodiment, the thermoelectric elements 11 are sandwiched between the high temperature side heat exchanger 14 and the low temperature side heat exchanger 16 after the plurality of thermoelectric elements 11 are integrally formed on the insulating substrate 13. As shown in FIG. 3, specifically, as shown in FIG. 3, it is configured so that the joining surfaces of the electrode portion 22 and the first electrode member 12 are joined by soldering. The first electrode member 12 and the thermoelectric element 11 are disposed on the upper surface of the low temperature side heat exchanger 16 and the other high temperature side heat exchanger 14 is disposed on the upper surface so as to overlap the thermoelectric element 11. You may comprise so that the joint surface of the 1st electrode member 12 and the 1st electrode member 12 and the electrode part 22 may be joined by soldering.

It is a schematic diagram which shows the whole structure of the thermoelectric conversion apparatus in one Embodiment of this invention. It is a disassembled schematic diagram which shows the structure of the principal part of the thermoelectric conversion apparatus in one Embodiment of this invention. It is an exploded schematic diagram which shows the structure of the principal part of the thermoelectric conversion apparatus in other embodiment.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... Thermoelectric element 12 ... 1st electrode member 14 ... High temperature side heat exchanger (metal substrate)
15 ... Fin member (heat exchange part)
16 ... Low temperature side heat exchanger (metal substrate)
21 ... Insulating coating layer 22 ... Electrode part

Claims (11)

Between the pair of metal substrates (14, 16) made of a metal material, both ends of a plurality of P-type and N-type thermoelectric elements (11) are respectively interposed with the first electrode member (12), and the metal substrate. (14, 16) and a heat exchange part (15) for absorbing and radiating heat transferred from the first electrode member (12) is disposed on one of the metal substrates (14, 16). In the thermoelectric conversion device,
The plurality of thermoelectric elements (11) are connected in series via the first electrode member (12), and
The metal substrate (14, 16) has an insulating coating layer (21) made of an insulating material at a position facing the first electrode member (12), and the first electrode on the surface of the insulating coating layer (21). The thermoelectric conversion apparatus characterized by forming the electrode part (22) joined to a member (12).   The thermoelectric conversion device according to claim 1, wherein the first electrode member (12) and the electrode portion (22) are joined by soldering.   The said electrode part (22) formed in the said metal substrate (14, 16) is formed thinner than the plate | board thickness of a said 1st electrode member (12), The Claim 1 or Claim characterized by the above-mentioned. 2. The thermoelectric conversion device according to 2.   The thermoelectric conversion device according to claim 3, wherein the electrode part (22) is formed by printing a paste-like conductive material on the surface of the insulating coating layer (21) and then drying it.   The thermoelectric conversion device according to claim 3, wherein the electrode portion (22) is formed by etching after bonding a conductive material to the surface of the insulating coating layer (21).   The electrode portion (22) is formed with a plate thickness of at least 0.1 mm or less, whereas the plate thickness of the first electrode member (12) is about 0.1 to 0.5 mm. The thermoelectric conversion device according to claim 3, wherein   The insulating coating layer (21) formed on the metal substrate (14, 16) is formed by either a diamond-like carbon coating or an aerosol deposition method made of alumina or aluminum nitride. The thermoelectric conversion device according to claim 1, wherein   The thermoelectric conversion device according to claim 7, wherein the insulating coating layer (21) has a thickness of at least about 10 m or less.   The insulating coating layer (21) formed on the metal substrate (14, 16) is formed by film formation of any one of ceramic paint, insulating electrodeposition coating, and insulating film. 1. The thermoelectric conversion device according to 1.   The thermoelectric conversion device according to claim 9, wherein the insulating coating layer (21) has a thickness of at least about 100 µm or less.   The plurality of thermoelectric elements (11) are integrally formed by arranging a plurality of P-type and N-type alternately in a substantially grid pattern on an insulating substrate (13) made of an insulating material. The thermoelectric conversion device according to any one of claims 1 to 10.

Images