TW201823380A - Resistive paste and resistor produced by firing same - Google Patents

Resistive paste and resistor produced by firing same Download PDF

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TW201823380A
TW201823380A TW106136193A TW106136193A TW201823380A TW 201823380 A TW201823380 A TW 201823380A TW 106136193 A TW106136193 A TW 106136193A TW 106136193 A TW106136193 A TW 106136193A TW 201823380 A TW201823380 A TW 201823380A
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resistor
resistive paste
lead
paste
mass
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TW106136193A
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TWI746670B (en
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幕田富士雄
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日商住友金屬礦山股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/24—Fusion seal compositions being frit compositions having non-frit additions, i.e. for use as seals between dissimilar materials, e.g. glass and metal; Glass solders
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/18—Oxygen-containing compounds, e.g. metal carbonyls
    • C08K3/20—Oxides; Hydroxides
    • C08K3/22—Oxides; Hydroxides of metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/40—Glass
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L101/00—Compositions of unspecified macromolecular compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
    • H01C17/06533—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
    • H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
    • H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
    • H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
    • H01C17/06573—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder
    • H01C17/06586—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the permanent binder composed of organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material

Abstract

Provided are: a lead-free thick film resistor which has good electrical characteristics such as low current noise, while having a high resistance; and a lead-free resistive paste which serves as a starting material for this resistor. A resistive paste which contains conductive particles that are formed from ruthenium dioxide, a glass frit that does not contain lead, an organic vehicle and an additive, and wherein from 5% by mass to 12% by mass (inclusive) of amorphous silica having a specific surface area of from 60 m2/g to 125 m2/g (inclusive) is contained as the additive.

Description

阻抗膏以及由該組抗膏膠燒結而成的阻抗體Impedance paste and resistance body sintered by the group of paste-resistant glue

本發明是有關於一種作為厚膜晶片電阻器或混合積體電路（Integrated Circuit，IC）等電阻體的材料而使用的電阻膏、尤其是不含鉛的電阻膏以及對電阻膏進行煅燒而製作的電阻體。The invention relates to a resistive paste used as a material of a thick film chip resistor or a resistor integrated circuit (Integrated Circuit, IC) and the like, in particular a lead-free resistive paste, and a resistive paste that is calcined and manufactured. Resistor body.

先前，作為形成電子零件的電阻體被膜的方法，通常已知有：使用包含膜形成材料的電阻膏而成膜的厚膜方式與藉由對膜形成材料進行濺鍍等而成膜的薄膜方式。該些中，厚膜方式是於將電阻膏印刷於陶瓷基板上後，藉由進行煅燒而形成電阻體的方式，該方法由於成膜所需要的設備廉價且生產性亦高，因此廣泛用於製造晶片電阻器或混合IC等電子零件所具有的電阻體。Conventionally, as a method for forming a resistor body film of an electronic component, a thick film method using a resistive paste containing a film forming material and a thin film method using sputtering or the like on a film forming material are generally known. . Among them, the thick film method is a method in which a resistor paste is printed on a ceramic substrate, and then a resistor is formed by firing. This method is widely used because the equipment required for film formation is inexpensive and the productivity is high. Manufactures resistors for electronic components such as chip resistors and hybrid ICs.

所述厚膜方式中使用的電阻膏含有：導電性粒子及玻璃料、以及用以將該些製成適合於印刷的膏狀的有機載體。作為導電性粒子，通常使用二氧化釕（RuO2 ）或焦綠石型釕系氧化物（Pb2 Ru2 O7-X 、Bi2 Ru2 O7 ）。如此使用Ru系氧化物作為導電性粒子的原因主要在於：電阻值相對於導電性粒子的濃度而平緩地發生變化。The resistive paste used in the thick film method includes conductive particles and glass frit, and an organic carrier for making these pastes suitable for printing. As the conductive particles, ruthenium dioxide (RuO 2 ) or a pyrochlore-type ruthenium-based oxide (Pb 2 Ru 2 O 7-X , Bi 2 Ru 2 O 7 ) is usually used. The reason why the Ru-based oxide is used as the conductive particles in this way is that the resistance value changes gently with respect to the concentration of the conductive particles.

另外，作為玻璃料，使用硼矽酸鉛玻璃（PbO-SiO2 -B2 O3 ）或鋁硼矽酸鉛玻璃（PbO-SiO2 -B2 O3 -Al2 O3 ）等包含大量的鉛的硼矽酸鉛系玻璃。如此玻璃料使用硼矽酸鉛系玻璃的原因在於：與Ru系氧化物的潤濕性良好，熱膨脹係數接近基板的熱膨脹係數，煅燒時的黏性等合適。In addition, as the frit, lead borosilicate glass (PbO-SiO 2 -B 2 O 3 ) or aluminoborosilicate glass (PbO-SiO 2 -B 2 O 3 -Al 2 O 3 ) is used. Lead borosilicate glass. The reason why the lead borosilicate-based glass is used in such a frit is that the wettability with Ru-based oxides is good, the thermal expansion coefficient is close to that of the substrate, and the viscosity during firing is suitable.

於所述電阻膏中，為了改善成膜後的電阻體的特性，自從前以來一直進行含有各種添加劑的操作。例如，於專利文獻1中揭示了將進行了微細化的氧化釕粉末、具有PbO的玻璃及氧化鈮（Nb2 O5 ）與惰性載體一起混合而製作電特性優異的厚膜電阻體用電阻膏的技術。 [現有技術文獻] [專利文獻]In the resistive paste, in order to improve the characteristics of the resistor after film formation, operations including various additives have been performed for a long time. For example, Patent Document 1 discloses that a ruthenium oxide powder having been refined, a glass having PbO, and a niobium oxide (Nb 2 O 5 ) are mixed with an inert carrier to produce a resistive paste for thick film resistors having excellent electrical characteristics. Technology. [Prior Art Literature] [Patent Literature]

[專利文獻1]日本專利特公昭63-035081號公報[Patent Document 1] Japanese Patent Publication No. 63-035081

[發明所欲解決之課題][Problems to be Solved by the Invention]

然而，於使用Nb2 O5 作為添加劑的情況下，可以少量的添加量實現特性的提高，但由於電阻值亦明顯變化，因此存在電阻值的調整困難的問題。另外，近年來，考慮到環境保護，於電子零件中無鉛化得到發展，對於電阻膏亦要求無鉛化。另外，將所述電阻膏作為材料而製作的電子零件等存在越來越小型化、高性能化的傾向，伴隨於此對電阻膏要求可製作電阻值高且電流雜訊小的電阻體者。However, when Nb 2 O 5 is used as an additive, the characteristics can be improved with a small amount of addition. However, since the resistance value also changes significantly, adjustment of the resistance value is difficult. In addition, in recent years, in consideration of environmental protection, lead-free has been developed in electronic parts, and lead-free has also been required for resistance pastes. In addition, electronic parts and the like manufactured using the resistive paste as a material tend to be miniaturized and improved in performance, and there is a demand for a resistive paste capable of manufacturing a resistor having a high resistance value and low current noise.

本發明是鑒於所述狀況而成者，目的在於提供一種可形成具有高電阻值且可將電流雜訊抑制地小的電特性優異的無鉛的厚膜電阻體的無鉛的電阻膏。 [解決課題之手段]The present invention has been made in view of the above circumstances, and an object thereof is to provide a lead-free resistive paste that can form a lead-free thick-film resistor having a high electrical resistance value and excellent electrical characteristics with small current noise suppression. [Means for solving problems]

本發明者對可達成所述目的的無鉛的電阻膏進行了反覆研究，結果發現藉由使電阻膏中含有特定的添加劑，即便於導電性粒子使用包含釕的無鉛的氧化物且玻璃料亦使用無鉛者的情況下，亦可製作具有良好的電特性的電阻體，從而完成了本發明。The present inventors conducted repeated research on a lead-free resistive paste that can achieve the above-mentioned object, and found that by including a specific additive in the resistive paste, even a lead-free oxide containing ruthenium is used for conductive particles and a frit In the case of a lead-free person, a resistor having good electrical characteristics can also be produced, and the present invention has been completed.

即，本發明所提供的電阻膏為如下電阻膏，其含有：包含二氧化釕的導電性粒子、不含鉛的玻璃料、有機載體及添加劑，且所述電阻膏的特徵在於：作為所述添加劑，包含5質量%以上且12質量%以下比表面積為60 m2 /g以上且125 m2 /g以下的非晶二氧化矽。 [發明的效果]That is, the resistive paste provided by the present invention is a resistive paste containing conductive particles including ruthenium dioxide, a lead-free glass frit, an organic carrier, and an additive, and the resistive paste is characterized in that: The additive contains amorphous silicon dioxide having a specific surface area of 60 m 2 / g or more and 125 m 2 / g or less in a range of 5 mass% or more and 12 mass% or less. [Effect of the invention]

根據本發明，可提供一種電阻膏，其可不引起鉛所帶來的環境污染而製作具有高電阻值且可將電流雜訊抑制地小的電特性優異的厚膜電阻體。According to the present invention, it is possible to provide a resistive paste that can produce a thick-film resistor body having a high resistance value and excellent electric characteristics with a small current noise suppression without causing environmental pollution caused by lead.

以下，對本發明的電阻膏的實施形態進行說明。關於作為所述本發明的實施形態的電阻膏中含有的導電性粒子的二氧化釕的形態，並無特別限制，可使用利用通常的製法而獲得的氧化物。其中，為了盡可能抑制藉由煅燒而形成的厚膜電阻體的電阻值的不均或電流雜訊，理想的是使所述厚膜電阻體中的導電路徑微細，為此理想的是氧化物粒子的布厄特（Brunauer-Emmett-Teller，BET）直徑的平均粒徑為1.0 μm以下。Hereinafter, embodiments of the resistance paste of the present invention will be described. The form of the ruthenium dioxide as the conductive particles contained in the resistance paste according to the embodiment of the present invention is not particularly limited, and an oxide obtained by a general production method can be used. Among them, in order to suppress unevenness in resistance value or current noise of a thick film resistor formed by firing as much as possible, it is desirable to make the conductive path in the thick film resistor fine, and for this reason, an oxide is desirable. The average particle diameter of the Brunauer-Emmett-Teller (BET) diameter is 1.0 μm or less.

所述電阻膏中含有的玻璃料只要為不含鉛者，則其組成並無特別限制。例如，可使用硼矽酸玻璃、鋁硼矽酸玻璃、硼矽酸鹼土類玻璃、硼矽酸鹼玻璃、硼矽酸鋅玻璃、硼矽酸鉍玻璃等。如上所述，為了使厚膜電阻體中的導電路徑微細而盡可能抑制所述厚膜電阻體的電阻值的不均或電流雜訊，較佳為玻璃料的利用雷射繞射式粒度分佈測定所得的D50（中值粒徑）為5 μm以下。The composition of the glass frit contained in the resistive paste is not particularly limited as long as it does not contain lead. For example, borosilicate glass, aluminum borosilicate glass, borosilicate alkaline earth glass, borosilicate glass, zinc borosilicate glass, bismuth borosilicate glass, and the like can be used. As described above, in order to make the conductive path in the thick-film resistor body fine and to suppress the unevenness or current noise of the resistance value of the thick-film resistor body as much as possible, it is preferable to use the laser diffraction particle size distribution of the glass frit. The D50 (median diameter) obtained by the measurement was 5 μm or less.

所述電阻膏中含有的有機載體可為電阻膏中通常使用者，例如可較佳地使用將乙基纖維素、丁縮醛、丙烯酸等樹脂溶解於松油醇、丁基卡必醇乙酸酯等溶劑中者。The organic carrier contained in the resistive paste may be an ordinary user in the resistive paste. For example, ethyl cellulose, butyral, and acrylic resins are preferably used to dissolve terpineol and butylcarbitol acetate. Ester and other solvents.

所述電阻膏進而含有5質量%以上且12質量%以下比表面積為60 m2 /g以上且125 m2 /g以下的非晶二氧化矽（SiO2 ）作為添加劑。非晶二氧化矽具有使藉由煅燒而形成的電阻體的電阻值上升並減小電流雜訊的作用。將非晶二氧化矽的比表面積限定為60 m2 /g以上且125 m2 /g以下的原因在於：若比表面積未滿60 m2 /g則電流雜訊（dB）難以變為負數，反之若超過125 m2 /g則電阻膏的黏度變得過高而難以製備所述電阻膏。另外，將非晶二氧化矽的含量設為相對於電阻膏而為5質量%以上且12質量%以下的原因在於：若未滿5質量%則電流雜訊（dB）難以變為負數，反之即便超過12質量%電流雜訊（dB）亦難以變為負數。The resistive paste further contains, as an additive, 5% by mass or more and 12% by mass or less of amorphous silicon dioxide (SiO 2 ) having a specific surface area of 60 m 2 / g or more and 125 m 2 / g or less. Amorphous silicon dioxide has the effect of increasing the resistance value of a resistor formed by firing and reducing current noise. The reason why the specific surface area of amorphous silicon dioxide is limited to 60 m 2 / g or more and 125 m 2 / g or less is that if the specific surface area is less than 60 m 2 / g, the current noise (dB) is difficult to become negative, Conversely, if it exceeds 125 m 2 / g, the viscosity of the resistive paste becomes too high and it is difficult to prepare the resistive paste. In addition, the reason why the content of amorphous silicon dioxide is 5 mass% or more and 12 mass% or less with respect to the resistive paste is that if it is less than 5 mass%, the current noise (dB) is difficult to become negative, otherwise Even if it exceeds 12% by mass, the current noise (dB) is difficult to become negative.

所述本發明的實施形態的電阻膏的製造法並無特別制約，可藉由於輥磨機等市售的混煉裝置中秤量並裝入所述電阻膏的構成成分的規定量且進行混煉而製作。此時，導電性粒子與玻璃料的混合比例較佳為以利用質量基準的導電性粒子/玻璃料的比計為5/95～50/50左右。另外，電阻體的製作法亦無特別制約，可使用所述本發明的實施形態的電阻膏作為材料並利用與先前同樣的方法而形成。例如，可藉由利用網版印刷法等將所述電阻膏塗佈於氧化鋁基板等通常的基板上並進行乾燥後，使用傳送帶爐等於800℃～900℃左右的峰值溫度下進行煅燒，而形成無鉛的電阻體。The method for manufacturing the resistive paste according to the embodiment of the present invention is not particularly limited. The resistive paste may be weighed by a commercially available kneading device such as a roll mill, and a predetermined amount of the constituent components of the resistive paste may be loaded and kneaded. While making. At this time, the mixing ratio of the conductive particles and the glass frit is preferably about 5/95 to 50/50 based on the ratio of the conductive particles / the glass frit using a mass standard. In addition, the method of manufacturing the resistor is not particularly limited, and the resistor paste according to the embodiment of the present invention can be used as a material and formed by the same method as before. For example, the resistive paste can be applied to a normal substrate such as an alumina substrate by screen printing, and dried, and then calcined using a conveyor furnace at a peak temperature equal to about 800 ° C to 900 ° C. Forms lead-free resistors.

再者，本發明的實施形態的電阻膏除了所述必須成分以外亦可視需要添加為了調整厚膜電阻體的電特性而自先前以來通常所使用的例如分散劑、塑化劑等各種添加劑。 [實施例]In addition, in addition to the essential components described above, various additives such as dispersants, plasticizers, and the like that have been conventionally used to adjust the electrical characteristics of thick-film resistors may be added to the resistor paste according to the embodiment of the present invention as necessary. [Example]

將導電性粒子、玻璃料、有機載體及添加劑以各種調配比例混合而製備多個電阻膏試樣，分別對該些試樣進行煅燒，藉此形成厚膜電阻體，並對其電特性進行評價。具體而言，導電性粒子準備藉由對氫氧化釕進行烘烤而製作的BET直徑為40 nm的RuO2 粉末。玻璃料準備如下的利用雷射繞射式粒度分佈測定所得的D50為1.9 μm的玻璃料：具有藉由利用通常的方法進行混合、熔融、驟冷、粉粹等而製作的10質量%SrO-43質量%SiO2 -16質量%B2 O3 -4質量%Al2 O3 -20質量%ZnO-7質量%Na2 O的組成。A plurality of resistive paste samples were prepared by mixing conductive particles, glass frit, organic vehicle, and additives in various formulation ratios, and each of these samples was calcined to form thick film resistors and evaluate their electrical characteristics. . Specifically, as the conductive particles, a RuO 2 powder having a BET diameter of 40 nm prepared by baking ruthenium hydroxide was prepared. The glass frit was prepared as follows: a glass frit having a D50 of 1.9 μm measured by a laser diffraction particle size distribution: 10% by mass of SrO- produced by mixing, melting, quenching, powdering, etc. by a general method. Composition of 43% by mass SiO 2 -16% by mass B 2 O 3 -4% by mass Al 2 O 3 -20% by mass ZnO-7% by mass Na 2 O.

添加劑準備比表面積分別為3 m2 /g、30 m2 /g、60 m2 /g、80 m2 /g及125 m2 /g的五種非晶SiO2 ，有機載體準備以乙基纖維素與萜品醇為主成分者。將該些RuO2 粉末、玻璃料、添加劑及有機載體以成為各種調配比例的方式進行秤量，利用三輥磨進行混煉。藉此，製作試樣1～試樣17的電阻膏。Five kinds of amorphous SiO 2 with specific surface areas of 3 m 2 / g, 30 m 2 / g, 60 m 2 / g, 80 m 2 / g, and 125 m 2 / g were prepared as additives. And terpineol. These RuO 2 powders, glass frits, additives, and organic carriers were weighed so as to have various formulation ratios, and kneaded with a three-roll mill. Thereby, the resistive pastes of the samples 1 to 17 were produced.

其次，對於各試樣的電阻膏，準備使用AgPd膏而形成有電極間距離為1 mm的兩個電極的氧化鋁基板，於所述氧化鋁基板上以將所述兩電極連接的方式將電阻膏網版印刷成寬度為1 mm，於150℃下進行10分鐘乾燥後，利用傳送帶爐於峰值溫度850℃下進行9分鐘煅燒。測定以所述方式製作的厚膜電阻體的電特性（電阻值、電流雜訊）。將電阻膏的組成與藉由各膏而獲得的電阻體的特性示於下述表1中。再者，電阻值是使用吉時利（KEITHLEY）公司製造的型號2001萬用表（Model 2001 Multimeter）並利用四端子法進行測定，電流雜訊是使用昆泰克（Quan-Tech）公司製造的雜訊測試儀型號315C（Model 315C）於1/10W施加下進行測定。Next, for the resistive paste of each sample, an alumina substrate having two electrodes with an electrode distance of 1 mm formed using AgPd paste was prepared, and the resistors were connected on the alumina substrate so as to connect the two electrodes. The paste screen was printed to a width of 1 mm, dried at 150 ° C for 10 minutes, and then calcined at a peak temperature of 850 ° C in a conveyor belt furnace for 9 minutes. The electrical characteristics (resistance value and current noise) of the thick film resistor manufactured in the above manner were measured. The composition of the resistive paste and the characteristics of the resistor obtained by each paste are shown in Table 1 below. In addition, the resistance value was measured using a Model 2001 Multimeter manufactured by Keithley and measured by the four-terminal method, and the current noise was measured using a noise test made by Quan-Tech. The instrument model 315C (Model 315C) was measured under the application of 1 / 10W.

[表1] 注）表中的附有*的試樣為比較例。[Table 1] Note) The samples with * in the table are comparative examples.

根據所述表1而明確般，可知：即便於使用包含廉價的RuO2 的導電性粒子與無鉛的玻璃料而形成厚膜電阻體的情況下，藉由於本發明規定的範圍內添加比表面積為60 m2 /g以上且125 m2 /g以下的非晶SiO2 作為添加劑，與不添加非晶SiO2 的情況或利用不滿足本發明的主要條件的態樣添加非晶SiO2 的情況相比，可減小電流雜訊。As is clear from Table 1, even when a thick film resistor is formed using conductive particles containing inexpensive RuO 2 and a lead-free glass frit, the specific surface area is added by the range specified in the present invention as 60 m 2 / g or more and 125 m 2 / g or less amorphous SiO 2 as an additive is not added or amorphous SiO 2 where conditions are not met by using primary aspect of the present invention, the case of adding the amorphous SiO 2 phase Ratio can reduce current noise.

無no

無no

Claims (4)

一種電阻膏，其含有包含二氧化釕的導電性粒子、不含鉛的玻璃料、有機載體及添加劑，且所述電阻膏的特徵在於：作為所述添加劑，包含5質量%以上且12質量%以下比表面積為60 m2 /g以上且125 m2 /g以下的非晶二氧化矽。A resistive paste containing conductive particles containing ruthenium dioxide, a lead-free glass frit, an organic carrier, and an additive, and the resistive paste is characterized in that, as the additive, 5 mass% or more and 12 mass% are included The following amorphous silicon dioxide has a specific surface area of 60 m 2 / g or more and 125 m 2 / g or less. 一種無鉛的電阻體，其是將如申請專利範圍第1項所述的電阻膏煅燒而成。A lead-free resistor body is obtained by calcining the resistor paste according to item 1 of the scope of patent application. 一種電子零件，其特徵在於具有如申請專利範圍第2項所述的電阻體。An electronic part is characterized by having a resistor as described in item 2 of the scope of patent application. 一種無鉛的電阻體的製造方法，其特徵在於：藉由對如申請專利範圍第1項所述的電阻膏進行煅燒而製作電阻體。A method for manufacturing a lead-free resistor body is characterized in that the resistor body is manufactured by firing the resistor paste described in item 1 of the scope of patent application.
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