TW201818442A - 電漿處理裝置 - Google Patents
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Abstract
一種電漿處理裝置,包含一上電極及一下電極,上電極包括複數凸柱及複數氣孔,複數凸柱凸伸設置於上電極之一面且連接電漿產生源,複數凸柱環繞一圓心形成複數圈,於每一圈設有至少一凸柱,每一凸柱為導電材質,於上電極設有凸柱之面設有介電材質覆蓋上電極及複數凸柱;複數氣孔分布於複數凸柱之間並連接製程氣體源;下電極具有一承載面用以承載工件,承載面朝向上電極設有凸柱之面,下電極為導電材質且其表面包覆有介電材質,下電極被驅動旋轉。
Description
本揭露有關於一種電漿處理裝置,尤指一種考慮電漿電極的分布、電極防電弧(arcing)防護、旋轉樣品載台的設計,提供在一個大面積的電漿氧化蝕刻系統之電漿處理裝置。
目前全球40%能量被使用為電能而消耗,其電能轉換最大耗散是半導體功率元件。矽功率元件已日趨其材料發展的極限,已難以滿足當今社會發展對於高頻、高溫、高功率、高能效、耐惡劣環境以及輕便小型化的新需求。碳化矽(SiC)因其寬能帶隙、優異的導熱性和良好的化學穩定性,適合做為高功率以及高溫的半導體元件。以碳化矽等為代表的第三代半導體材料,將被廣泛應用於光電子元件、電力電子元件等領域,以其優異的半導體性能在各個現代工業領域都將發揮重要革新作用,應用前景和市場潛力巨大。
在LED半導體照明領域,碳化矽技術同樣發揮了重要影響和引領作用。以碳化矽為襯底,有效地解決了襯底材料與氮化鎵(GaN)的晶格匹配度問題,減少了缺陷和位錯,更高的電光轉換效率從根本上帶來更多的出光和更少的散熱。高密度級發光二極體技術可實現尺寸更小、性能更高、設計更具靈活性的發光二極 體照明系統,經過優化設計的光轉換系統可實現最佳散熱性能和光學性能,並且使得系統層面的光學、電學、熱學、機械學成本大幅降低。
碳化矽晶圓雖具有優異材料特性,但由於碳化矽為莫氏硬度9.25~9.5(僅次於鑽石)之超硬材料,如在最末段拋光加工製程仍需移除材料1~2微米(μm)之深度,以傳統化學機械研磨(CMP)拋光碳化矽晶圓需耗時約10小時甚至更久,因此加工耗時成為產能上之瓶頸,導致成本居高不下,約占晶圓售價約一半之加工成本,因此國內外均致力提升大尺寸(直徑≧4吋)碳化矽晶圓之加工效率。
此外,電漿是一種乾式處理製程,包含了帶電的粒子如電子、離子以及不帶電的亞穩態物種、自由基以及光、熱等。在各種物種的交互作用下,創造的特殊的物理以及化學反應環境,使得其應用廣泛,在光電、半導體製程中已廣泛運用低壓電漿系統做為表面改質處理、蝕刻、鍍膜等用途。而近年來,由於電源系統的精進,使在大氣壓的環境中產生電漿成為可能,大氣壓電漿則具可於大氣壓下作動、無須昂貴真空腔體、真空抽氣設備等特點,相較於真空電漿技術,可大幅降低設置的成本。在產線應用上,大氣電漿不受腔體尺寸限制,易於擴充、且可運用於連續製程處理等優勢,增加其產品的適用範圍。目前大氣電漿的應用,包含尾氣有機氣體分解處理應用;固態基板表面處理活化、清潔蝕刻、鍍膜;水資源處理以及生物醫學的應用等等。
國內外業界在碳化矽晶圓拋光製程方面,目前仍是使用傳統矽晶圓工法進行拋光,僅針對拋光液與製程調校來達成碳化矽晶 圓拋光加工,製程耗時且污染性高。在領先研發團隊方面,日本大阪大學已有使用水氣射頻(RF)大氣電漿進行碳化矽表面氧化之輔助式拋光製程,其電漿功率小且僅作單點之改質,因此效果無法擴及大面積,氧化層產生速率僅3奈米/分鐘(nm/min),且量產可行性也備受質疑。
因此,如何能有一種可考慮電漿電極的分布、電極防電弧(arcing)防護、旋轉樣品載台的設計,提供在一個大面積的電漿氧化蝕刻系統之「電漿處理裝置」,係相關技術領域亟需解決之課題。
於一實施例中,本揭露提出一種電漿處理裝置,其包含:一上電極,包括:複數凸柱,凸伸設置於上電極之一面且連接電漿產生源,複數凸柱環繞一圓心形成複數圈,於每一圈設有至少一凸柱,每一凸柱為導電材質,於上電極設有凸柱之面設有介電材質覆蓋上電極及複數凸柱;複數氣孔,分布於複數凸柱之間,複數氣孔連接製程氣體源;以及一下電極,其具有一承載面用以承載工件,承載面朝向上電極設有凸柱之面,下電極為導電材質且其表面包覆有介電材質,下電極被驅動旋轉。
10‧‧‧上電極
11‧‧‧座體
111、111A~111D‧‧‧凸柱
112‧‧‧套件
113‧‧‧隔片
114‧‧‧冷卻流道
1141‧‧‧流入端
1142‧‧‧流出端
115‧‧‧第一蓋板
1151‧‧‧流體入口
1152‧‧‧流體出口
1153‧‧‧第二氣體入口
116‧‧‧第一氣體入口
12‧‧‧殼體
121‧‧‧第一孔洞
122‧‧‧氣孔
123‧‧‧第二蓋板
20‧‧‧電極
21‧‧‧承載面
22‧‧‧內組件
23‧‧‧外組件
24‧‧‧抽氣孔
25‧‧‧轉軸桿
26‧‧‧時規皮帶輪
27‧‧‧旋轉動力源
30‧‧‧工件
C1~C13‧‧‧圈
T1、T2‧‧‧相疊區域
圖1為本揭露之實施例之組合前視結構示意圖。
圖2為本揭露之上電極與下電極一實施例之立體結構示意 圖。
圖3為圖2之A-A剖面結構示意圖。
圖4為本揭露之冷卻流道之一實施例之結構示意圖。
圖5為本揭露之凸柱分布位置之一實施例之示意圖。
圖6為圖5凸柱實施例之圓環形軌跡之內緣至少相切形成一圓形涵蓋範圍之示意圖。
圖7為本揭露之凸柱分布位置另一實施例之結構示意圖。
圖8為圖2之B-B剖面結構示意圖。
請參閱圖1所示一種電漿處理裝置之實施例,其包含一上電極10及一可旋轉且接地之下電極20。上電極10可上下移動,亦即相對於下電極20靠近或遠離。上電極10用於提供電漿產生源及製程氣體。下電極20用於作為工件30的承載平台以及作為電漿電源的接地電極。上電極10與下電極20之間的區域為電漿產生區。
請參閱圖2及圖3所示實施例,上電極10包括一導電材質之座體11及一介電材質之殼體12。於座體11之一面(亦即圖示座體11之底面)設有複數凸柱111,凸柱111連接於電漿產生源。必須說明的是,由於凸柱111與座體11相連,因此電漿產生源可連接於座體11,而後電漿產生源再傳輸至凸柱111。換言之,凸柱111可間接或直接連接於電漿產生源,視實際設計結構而定。每一凸柱111皆為圓柱體,其軸向端部朝向下電極20。每一凸柱111套設有一介電材質之套件112。於殼體12相對應於複數凸柱111之位置設有複數第一孔洞121,座體11設置於殼體12內,套 設有套件112之複數凸柱111由相對應之第一孔洞121凸伸於殼體12外。於複數凸柱111之間分布有複數氣孔122。於座體11設有複數凸柱111之面設有一介電材質之隔片113,例如,陶瓷片、鐵氟龍片。於座體11相對於設有複數凸柱111之面(亦即圖示座體11之頂面)設有冷卻流道114及一第一氣體入口116。
請參閱圖3及圖4所示,冷卻流道114是一連續流道,其具有一流入端1141以及一流出端1142。於座體11相對於設有複數凸柱111之面設有一導電材質之第一蓋板115覆蓋於冷卻流道114。於第一蓋板115設有一流體入口1151、一流體出口1152及一第二氣體入口1153。冷卻流體由流體入口1151進入流入端1141,再由流出端1142經由流體出口1152流出冷卻流道114。製程氣體由外部通過第二氣體入口1153、第一氣體入口116後,再分別經由複數氣孔122流出殼體12,並流至上電極10與下電極20之間的電漿產生區。此外,殼體12具有一介電材質之第二蓋板123,其設置於殼體12相對於設有複數凸柱111之面,且覆蓋於第一蓋板115。當第一蓋板115與座體11結合,且第二蓋板123與殼體12結合後,殼體12可與座體11結合並固定(亦即,如同三明治一樣,第二蓋板123和殼體12將座體11夾合於其間),即可形成一個密閉的冷卻流道114,冷卻流道114中的冷卻流體可冷卻上電極10,以維持上電極10的溫度。
必須說明的是,上述實施例所採用之介電材質之殼體12、介電材質之套件112及介電材質之隔片113,其作用在於使每個凸柱均勻激發電漿,並防止電漿產生時,帶電粒子直接轟擊導電電極而形成電弧放電損傷電極。然為達成此目的所能採用的技術手段 不限於此,例如,殼體12與套件112可結合為一整體覆蓋於上電極10及凸柱111之介電材質。
請參閱圖5所示,本揭露之凸柱111之位置分布之一特性在於,複數凸柱111環繞一圓心形成複數圈C1~C13,於每一圈C1~C13設有至少一凸柱111。就圖5而言,座體11呈圓形,因此以座體11的圓心為中心共設有十三圈C1~C13;若座體11為其他非圓形形狀亦可,只要選定一定點作為環繞的圓心即可。第一圈C1及第二圈C2分別設有一凸柱111,第三~十圈C3~C10設有二個凸柱111,第十一~十三圈C11~C13設有三個凸柱111。本實施例之複數凸柱111的直徑相同,但亦可不同,亦即,複數凸柱111可為一種尺寸,或具有複數種尺寸。此外,於相鄰兩圈C1~C13之間或在每一圈C1~C13上設有至少一氣孔122(於圖5未顯示氣孔,可參閱圖2所示氣孔122)。
請參閱圖6所示,本揭露之凸柱111之位置分布之另一特性在於,每一圈上之凸柱所形成之圓環形軌跡之外緣與其相鄰之圓環形軌跡之內緣至少相切,複數圈之凸柱之圓環形軌跡形成一圓形涵蓋範圍。就圖6而言,兩相鄰圈之凸柱111A、111B之所形成之圓環形軌跡具有相疊區域,兩相鄰圈凸柱111C、111D之所形成之圓環形軌跡具有相疊區域T2,以此類推,其他相鄰圈上之凸柱所形成之圓環形軌跡亦具有相疊區域。如此,所有的凸柱之圓環形軌跡可形成一圓形涵蓋範圍,而該圓形涵蓋範圍應可涵蓋工件30(請參閱圖2所示)的加工面積。但必須說明,相疊區域之設置並非必要,每一圈上之凸柱所形成之圓環形軌跡之外緣與其相鄰之圓環形軌跡之內緣至少相切即可。
請參閱圖7所示,本實施例與圖5實施例類似,差異在於本實施例的第二圈C2設有二個凸柱111。
圖5及圖7的實施例說明,本揭露每圈之凸柱之數量為至少一個,但可依實際需要而變化。
請參閱圖2及圖8所示,下電極20具有一承載面21用以承載工件30,承載面21朝向上電極10設有凸柱111之面,下電極20具有一導電材質且接地之內組件22以及包覆於內組件22表面之介電材質之外組件23。下電極20被驅動可旋轉,如圖1所示,下電極20之轉軸桿25可銜接時規皮帶輪26與旋轉動力源27(例如馬達)銜接,藉以驅動下電極20旋轉,並可調整旋轉的速率,然驅動裝置之型態不限於此。本實施例之下電極20為圓形,其旋轉中心與複數圈之凸柱111之圓心同心,亦即與上電極10之圓心同心。於下電極20之承載面21設有複數抽氣孔24連接抽氣源,用以吸附工件30使定位於承載面21。
請參閱圖2所示,本揭露藉由上電極10的凸柱111,使電漿易於激發,被強迫拘束於凸柱111的位置,再藉由凸柱111位置的排列以及下電極20的旋轉機制,使所產生的電漿處理範圍涵蓋整個電漿處理範圍,達成整面電漿處理的目的。
綜上所述,本揭露提供之電漿處理裝置,其具有一具有非對稱凸柱分佈的上電極以及一可旋轉的下電極。上電極具有複數氣孔用以導入製程用的氣體。當激發一電漿產生源(例如:DC pulse、RF)於電極時,在上電極的凸柱及下電極間產生電漿。當下電極旋轉啟動時,上電極的凸柱分佈設計使電漿處理範圍可涵蓋整個工件的處理面而達到整面電漿處理的目標。
本揭露所使用的電漿系統係於大氣中產生,具大面積、無需真空腔體且模組化設計等特色,易與機械化學拋光設備進行整合。
本揭露可用於硬脆材料(例如碳化矽)提升拋光效率的大氣電漿處理裝置,藉由電漿解離氣體所產生的反應物種與硬脆材料表面產生物理及化學反應,達到表面改質或形成揮發物種自表面移除的功效,解決機械化學拋光在難加工硬脆材料表面拋光製程移除效率過低,導致加工成本居高不下的問題。
惟以上所述之具體實施例,僅係用於例釋本揭露之特點及功效,而非用於限定本揭露之可實施範疇,於未脫離本揭露上揭之精神與技術範疇下,任何運用本揭露所揭示內容而完成之等效改變及修飾,均仍應為下述之申請專利範圍所涵蓋。
Claims (10)
- 一種電漿處理裝置,其包含:一上電極,包括:複數凸柱,凸伸設置於該上電極之一面且連接電漿產生源,該複數凸柱環繞一圓心形成複數圈,於每一圈設有至少一該凸柱,每一該凸柱為導電材質,於該上電極設有該複數凸柱之面設有介電材質覆蓋該上電極及該複數凸柱;複數氣孔,分布於該複數凸柱之間,該複數氣孔連接製程氣體源;以及一下電極,其具有一承載面用以承載工件,該承載面朝向該上電極設有該複數凸柱之面,該下電極為導電材質且其表面包覆有介電材質,該下電極接地且被驅動旋轉。
- 如申請專利範圍第1項所述之電漿處理裝置,其中該每一圈上之該凸柱所形成之圓環形軌跡之外緣與其相鄰之圓環形軌跡之內緣至少相切,該複數圈之凸柱之圓環形軌跡形成一圓形涵蓋範圍。
- 如申請專利範圍第1項所述之電漿處理裝置,其中每一該凸柱為圓柱體,其軸向端部朝向該下電極。
- 如申請專利範圍第3項所述之電漿處理裝置,其中該複數凸柱之直徑具有至少一種尺寸。
- 如申請專利範圍第1項所述之電漿處理裝置,其中於相鄰兩該圈之間或在該每一圈上設有至少一氣孔。
- 如申請專利範圍第1項所述之電漿處理裝置,其中該上電極包括: 一座體,為導電材質,該複數凸柱設置於該座體之一面;複數套件,為介電材質,每一該凸柱套設一該套件;以及一殼體,為介電材質,其相對應於該複數凸柱之位置設有複數第一孔洞,該座體設置於該殼體內,該套設有該套件之該複數凸柱由相對應之該複數第一孔洞凸伸於該殼體外,該複數氣孔設置於該殼體。
- 如申請專利範圍第6項所述之電漿處理裝置,其中該座體包括:冷卻流道,設置於該座體相對於設有該複數凸柱之面,該冷卻流道具有一流入端以及一流出端;第一蓋板,為導電材質,設置於該座體相對於設有該複數凸柱之面,且覆蓋於該冷卻流道,該第一蓋板設有一流體入口及一流體出口,冷卻流體由該流體入口流入該流入端,再由該流出端經由流體出口流出該冷卻流道。
- 如申請專利範圍第7項所述之電漿處理裝置,其中該殼體具有一第二蓋板,為介電材質,其設置於該殼體相對於設有該複數凸柱之面,且覆蓋於該第一蓋板。
- 如申請專利範圍第6項所述之電漿處理裝置,其中該座體設有該複數凸柱之面設有一介電材質之隔片。
- 如申請專利範圍第1項所述之電漿處理裝置,其中該下電極之承載面設有複數抽氣孔,用以吸附該工件使定位於該承載面。
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CN100495654C (zh) * | 2003-02-03 | 2009-06-03 | 日本奥特克株式会社 | 等离子体处理装置和等离子体处理装置用的电极板和电极板制造方法 |
US20070210037A1 (en) * | 2006-02-24 | 2007-09-13 | Toshifumi Ishida | Cooling block forming electrode |
US7767028B2 (en) * | 2007-03-14 | 2010-08-03 | Lam Research Corporation | Cleaning hardware kit for composite showerhead electrode assemblies for plasma processing apparatuses |
US8187414B2 (en) * | 2007-10-12 | 2012-05-29 | Lam Research Corporation | Anchoring inserts, electrode assemblies, and plasma processing chambers |
JP2009283904A (ja) * | 2008-04-25 | 2009-12-03 | Nuflare Technology Inc | 成膜装置および成膜方法 |
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US8258025B2 (en) * | 2009-08-07 | 2012-09-04 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing microcrystalline semiconductor film and thin film transistor |
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US20140141619A1 (en) * | 2012-11-19 | 2014-05-22 | Tokyo Electron Limited | Capacitively coupled plasma equipment with uniform plasma density |
US20140138030A1 (en) * | 2012-11-19 | 2014-05-22 | Tokyo Electron Limited | Capacitively coupled plasma equipment with uniform plasma density |
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