[實施發明之最佳形態] [0018] 以下對於本發明進行更詳細之說明。 本發明的剝離層形成用組成物為包含下述式(1)所表示之聚醯胺酸、與有機溶劑。 [0019] 在本發明中,所謂的剝離層係設置於將形成樹脂基板的基體(玻璃基體等)之正上方之層。作為該典型例可舉例如,在可撓性電子裝置之製造製程中,在上述基體、與聚醯亞胺樹脂或丙烯酸樹脂等所形成的可撓性電子裝置的樹脂基板之間為了使該樹脂基板於指定的製程中為固定所設置,且,於該樹脂基板上形成電子電路等之後,為了使該樹脂基板可容易從該基體剝離所設置的剝離層。 [0020][0021] 式(1)中,X係下述式(2a)或(2b)所表示之芳香族基,Y係具有氟原子的2價的芳香族基,若X為式(2a)時,Z係相互獨立為下述式(3a)或(4a)所表示之芳香族基,若X為式(2b)時,則其相互獨立為下述式(3b)或(4b)所表示之芳香族基,m係表示自然數。[0022] 上述X中,上述式(2a)所表示之芳香族基係以下述式(7a)或(8a)所表示之芳香族基為較佳,上述式(2b)所表示之芳香族基係以下述式(7b)或(8b)所表示之芳香族基為較佳。 [0023][0024] 又,上述Z中,上述式(3a)或(4a)所表示之芳香族基係以下述式(9a)或(10a)所表示之芳香族基為較佳,上述式(3b)或(4b)所表示之芳香族基係以下述式(9b)或(10b)所表示之芳香族基為較佳。 [0025][0026] 上述Y係以具有氟原子、且包含1~5個苯環的芳香族基為較佳,以選自下述式(5)之芳香族基為又較佳,以選自下述式(6)之芳香族基為更佳。 [0027][0028][0029] 上述m只要是自然數即可,以100以下的自然數為較佳,以2~100的自然數為又較佳。 [0030] 上述式(1)所表示之聚醯胺酸係藉由使指定的四羧酸二酐成分與二胺成分進行反應而得者。 作為上述四羧酸二酐成分,係使用苯均四酸二酐或聯苯基四羧酸二酐。作為上述二胺成分,只要是具有氟原子者可以是脂鏈、脂環、芳香族、芳香脂環族中任一者,但本發明中,特別是就對於低黏度溶劑之溶解性提升之同時,提升作為所得到之膜的剝離層的機能之觀點而言,以使上述苯均四酸二酐或聯苯基四羧酸二酐、與包含上述芳香族二胺的二胺成分進行反應而得到之聚醯胺酸為較佳,以使上述四羧酸二酐與芳香族二胺進行反應而得到之全芳香族聚醯胺酸為又較佳。 以下,對於可使用於合成具有上述式(1)所表示之構造的聚醯胺酸時之苯均四酸二酐成分、聯苯基四羧酸二酐及二胺成分來進行詳述。 [0031] 作為苯均四酸二酐,只要在分子內具有2個二羧酸酐部位,且具有苯環則不特別限定。作為其具體例,可舉出焦蜜石酸二酐、苯-1,2,3,4-四羧酸二酐等,本發明中係以焦蜜石酸二酐為較佳。該等係可單獨1種來使用、亦可組合2種以上來使用。 [0032] 作為聯苯基四羧酸二酐,只要在分子內具有2個二羧酸酐部位,且具有聯苯基則不特別限定。作為其具體例,可舉出2,2’,3,3’-聯苯四羧酸二酐、2,3,3’,4’-聯苯四羧酸二酐、3,3’,4,4’-聯苯四羧酸二酐等,本發明中係以3,3’,4,4’-聯苯四羧酸二酐為較佳。該等係可單獨1種來使用、亦可組合2種以上來使用。 [0033] 另一方面,作為芳香族二胺,只要是具有氟原子、且在分子內具有與芳香環直接鍵結的2個胺基即可,並無特別限定,以1~5個苯環、特別是以1~2個、進而以包含2個芳香族的二胺為較佳。又,以具有氟烷基或全氟烷基者為又較佳,以全氟烷基為更佳。作為上述全氟烷基,可舉例如三氟甲基、五氟乙基、n-七氟丙基及i-七氟丙基等。 [0034] 作為上述芳香族二胺之具體例,可舉出5-三氟甲基苯-1,3-二胺、5-三氟甲基苯-1,2-二胺、2,2’-雙(三氟甲基)-4,4’-二胺基聯苯及3,3’-雙(三氟甲基)聯苯基-4,4’-二胺等,但並非被限定於該等中。本發明,即使是該等之中,特別可適合使用2,2’-雙(三氟甲基)-4,4’-二胺基聯苯。該等係可單獨1種來使用、亦可組合2種以上來使用。 [0035] 由於二胺成分與四羧酸二酐成分的饋入比,係考慮目標的分子量或分子量分布、二胺或四羧酸二酐的種類等來做適當決定,因而無法一概地規定,但為了得到上述式(1)之聚醯胺酸,相對於二胺成分的莫耳數,以增加四羧酸二酐成分的莫耳數為較佳。作為具體的莫耳比,相對於二胺成分1莫耳,以四羧酸二酐成分1.05~2.5莫耳為較佳,以1.07~1.5莫耳為又較佳,以1.1~1.3莫耳為進一步較佳。 [0036] 藉由以上說明之四羧酸二酐成分與二胺成分進行反應,而可得到本發明的剝離層形成用組成物中所包含的聚醯胺酸。 [0037] 合成聚醯胺酸中使用的有機溶劑,只要是不會對反應帶來不良影響則並無特別限定,作為其具體例,可舉出m-甲酚、2-吡咯啶酮、N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮、N-乙烯基-2-吡咯啶酮、N,N-二甲基乙醯胺、N,N-二甲基甲醯胺、3-甲氧基-N,N-二甲基丙醯胺、3-乙氧基-N,N-二甲基丙醯胺、3-丙氧基-N,N-二甲基丙醯胺、3-異丙氧基-N,N-二甲基丙醯胺、3-丁氧基-N,N-二甲基丙醯胺、3-sec-丁氧基-N,N-二甲基丙醯胺、3-tert-丁氧基-N,N-二甲基丙醯胺、γ-丁內酯、丙二醇單甲基醚及丙二醇單甲基醚乙酸酯等。尚,有機溶劑係可單獨1種単獨或亦可組合2種以上來使用。 [0038] 合成聚醯胺酸時之反應溫度只要是在使用之溶劑的熔點至沸點的範圍內來做適當設定即可,通常為0~100℃左右,但就為了防止所得到之聚醯胺酸在溶液中的醯亞胺化而維持聚醯胺酸單位的高含有量觀點而言,較佳為0~70℃左右,又較佳為0~60℃左右,更佳為0~50℃左右。由於反應時間係取決於反應溫度或原料物質之反應性,故無法一概地規定,通常為1~100小時左右。 [0039] 以如此般之方式所得到之聚醯胺酸之重量平均分子量係通常為5,000~500,000左右,但就提升作為所得到之膜的剝離層的機能之觀點而言,較佳為10,000~ 200,000左右,又較佳為10,000~150,000左右。尚,在本發明中,重量平均分子量係藉由凝膠滲透層析法(GPC)測定所得到之聚苯乙烯換算值。 [0040] 作為本發明中可適合使用的聚醯胺酸之具體例,可舉出下述式所表示者,但並非被限定於此中。 [0041](式中,m1及m2係表示重複單位的數量,m1與m2之合計係與上述m相同) [0042](式中,m1及m2係表示重複單位的數量,m1與m2之合計係與上述m相同) [0043] 本發明的剝離層形成用組成物係包含有機溶劑。作為該有機溶劑,能使用與上述反應的反應溶劑之具體例相同者,由於充分溶解本發明的聚醯胺酸,而易於調製均勻性為高的組成物,故以選自由醯胺類、醇類、酯類、醚類及酮類所成之群之有機溶劑為較佳,特別是以包含具有下述式(S1)~(S7)所表示之構造之至少1種為較佳。 [0044][0045] 上述式中,R1
~R8
係相互獨立為氫原子、或碳數1~10,較佳為表示1~5的烷基。R9
及R10
係相互獨立為氫原子、碳數1~10,較佳為1~5的烷基、或碳數1~10,較佳為表示1~5的醯基。b係表示自然數以1~5的自然數為較佳,以1~3的自然數為又較佳。n係表示自然數以1~5的自然數為較佳,以1~3的自然數為又較佳。 [0046] 作為碳數1~10的烷基之具體例,直鏈狀、分支鏈狀、環狀中任一皆可,可舉出甲基、乙基、n-丙基、異丙基、環丙基、n-丁基、異丁基、s-丁基、t-丁基、n-戊基、1-甲基-n-丁基、2-甲基-n-丁基、3-甲基-n-丁基、1,1-二甲基-n-丙基、1,2-二甲基-n-丙基、2,2-二甲基-n-丙基、1-乙基-n-丙基、環戊基、n-己基、1-甲基-n-戊基、2-甲基-n-戊基、3-甲基-n-戊基、4-甲基-n-戊基、1,1-二甲基-n-丁基、1,2-二甲基-n-丁基、1,3-二甲基-n-丁基、2,2-二甲基-n-丁基、2,3-二甲基-n-丁基、3,3-二甲基-n-丁基、1-乙基-n-丁基、2-乙基-n-丁基、1,1,2-三甲基-n-丙基、1,2,2-三甲基-n-丙基、1-乙基-1-甲基-n-丙基、1-乙基-2-甲基-n-丙基、環己基、n-庚基、n-辛基、n-壬基及n-癸基等。 [0047] 作為碳數1~10的醯基之具體例,可舉出甲醯基、乙醯基、丙醯基、丁醯基、異丁醯基、戊醯基、異戊醯基、己醯基、異己醯基、庚醯基、異庚醯基、辛醯基、異辛醯基、壬醯基、異壬醯基、癸醯基、異癸醯基及苯甲醯基等。 [0048] 作為上述式(S1)~(S7)所表示之有機溶劑之具體例,可舉出以下者。 式(S1):3-甲氧基-N,N-二甲基丙醯胺、3-乙氧基-N,N-二甲基丙醯胺、3-丙氧基-N,N-二甲基丙醯胺、3-異丙氧基-N,N-二甲基丙醯胺、3-丁氧基-N,N-二甲基丙醯胺、3-sec-丁氧基-N,N-二甲基丙醯胺、3-tert-丁氧基-N,N-二甲基丙醯胺 式(S2):2-吡咯啶酮、N-甲基-2-吡咯啶酮、N-乙基-2-吡咯啶酮 式(S3):N,N-二甲基甲醯胺、N,N-二甲基乙醯胺、N,N-二甲基丙醯胺、N,N-二甲基丁醯胺 式(S4):γ-丁內酯 式(S5):環戊酮、環己酮、環庚酮 式(S6):乳酸甲酯、乳酸乙酯、乳酸n-丙酯、乳酸n-丁酯、乳酸異戊酯、2-羥基異丁酸甲酯、2-羥基異丁酸乙酯、2-羥基異丁酸丙酯、2-羥基異丁酸丁酯 式(S7):乙基溶纖劑、丁基溶纖劑、乙二醇、1-甲氧基-2-丙醇、1-乙氧基-2-丙醇、1-丁氧基-2-丙醇、丙二醇單甲基醚、丙二醇-1-單甲基醚-2-乙酸酯、丙二醇-1-單乙基醚-2-乙酸酯 [0049] 本發明中,即使是該等之中,亦以N-甲基-2-吡咯啶酮、丁基溶纖劑、丙二醇單甲基醚及丙二醇單甲基醚乙酸酯為較佳,以丙二醇單甲基醚及丙二醇單甲基醚乙酸酯為又較佳,以丙二醇單甲基醚為更佳。該等之有機溶劑係可單獨1種或亦可組合2種以上來使用。 [0050] 特別是作為上述有機溶劑,使用丙二醇單甲基醚及丙二醇單甲基醚乙酸酯之類(意即,低黏度溶劑)之情形時,可得到亦能適合適用於狹縫塗裝之低黏度的剝離層形成用組成物。尚,若將本發明的剝離層形成用組成物使用於狹縫塗裝之情形時,溶劑全體中所占的上述低黏度溶劑的比例係以60質量%以上為較佳,以70質量%以上為又較佳,以80質量%以上為最佳。 [0051] 尚,即使是單獨使用時為無法溶解聚醯胺酸的溶劑,只要是聚醯胺酸不析出的範圍,可使用於組成物的調製。特別是可適度混摻乙基卡必醇、丁基卡必醇、乙基卡必醇乙酸酯、1-苯氧基-2-丙醇、丙二醇單乙酸酯、丙二醇二乙酸酯、二丙二醇、2-(2-乙氧基丙氧基)丙醇等的具有低表面張力的溶劑。據此,已知於塗佈至基板時可提升塗膜均勻性,於本發明中亦可適合使用。 [0052] 本發明的剝離層形成用組成物係可依通常之方法來調製。作為調製方法的較佳之一例,將藉由上述所說明之方法而得到之包含作為目標的聚醯胺酸的反應溶液進行過濾,並使用上述之有機溶劑來將所得到之濾液的濃度設為指定的濃度即可。藉由採用如此般之方法,不僅可降低能成為由所得到之組成物所製造的剝離層之密著性、剝離性等的惡化的原因之雜質的混入,並可有效地得到剝離層形成用組成物。 [0053] 本發明的剝離層形成用組成物中之聚醯胺酸的濃度係參酌所製作的剝離層的厚度、組成物的黏度等來做適當設定,通常為1~30質量%左右,較佳為1~20質量%左右。藉由設定如此般的濃度,可再現性良好地得到0.05~5μm左右的厚度的剝離層。聚醯胺酸的濃度係可調整作為聚醯胺酸的原料之二胺成分與四羧酸二酐成分及芳香族單胺的使用量,或於離析之聚醯胺酸溶解於溶劑中時調整其量等來進行調節。 [0054] 又,本發明的剝離層形成用組成物的黏度係參酌所製作的剝離層的厚度等來做適當設定,特別是將再現性良好得到0.05~5μm左右的厚度的膜作為目標之情形時,通常以25℃下10~10,000mPa·s左右,較佳為20~5,000 mPa·s左右。又,若本發明的剝離層形成用組成物使用於狹縫塗裝方式之情形時,其黏度係以2~100mPa·s左右為佳,就生產性之觀點而言,以2~25mPa·s左右為較佳。 [0055] 於此,黏度係可使用市售的液體的黏度測定用黏度計,參考例如JIS K7117-2所記載之程序,並藉由組成物的溫度25℃之條件下來進行測定。較佳的是作為黏度計係使用圓錐平板型(Cone-and-plate型)旋轉黏度計,且較佳為能以同型的黏度計,使用1°34’×R24來作為標準錐形轉子,並藉由組成物的溫度25℃之條件下來進行測定。作為如此般的旋轉黏度計,係可舉例如東機產業股份有限公司製TVE-25L。 [0056] 尚,本發明的剝離層形成用組成物,除聚醯胺酸及有機溶劑之外,為了提升例如膜強度亦可包含交聯劑等。 [0057] 藉由將以上說明之本發明的剝離層形成用組成物塗佈於基體,並加熱所得之塗膜來將聚醯胺酸熱醯亞胺化,可得到具有與基體為優異的密著性及與樹脂基板為適度的密著性和適度的剝離性之由聚醯亞胺膜所成之剝離層。 [0058] 若將如此般的本發明的剝離層形成於基體上之情形時,剝離層係可形成於基體的一部分表面、亦可形成於整面。作為於基體的一部分表面形成剝離層之樣態,係有僅在基體表面之中指定的範圍來形成剝離層之樣態、於基體表面的整面將剝離層形成為點(dot)圖型、線和間隙(line and space)圖型等的圖型形狀之樣態等。尚,在本發明中,所謂基體係指可在其表面塗佈本發明的剝離層形成用組成物者,意味可使用於可撓性電子裝置等的製造者。 [0059] 作為基體(基材),可舉例如玻璃、塑膠(聚碳酸酯、聚甲基丙烯酯、聚苯乙烯、聚酯、聚烯烴、環氧、三聚氰胺、三乙醯纖維素、ABS、AS、降莰烯系樹脂等)、金屬(矽晶圓等)、木材、紙、石板等。本發明中,特別是由於剝離層具有充分的密著性,故可適合使用玻璃基體。尚,基體表面係可以單一的材料所構成、亦可以2以上的材料所構成。作為以2以上的材料來構成基體表面之樣態,係有基體表面之中的某範圍以某種的材料所構成,其餘的範圍則以其他的材料所構成之樣態,在基體表面的全體某種材料以點(dot)圖型、線和間隙(line and space)圖型等的圖型形狀來存在於其他的材料中之樣態等。 [0060] 將本發明的剝離層形成用組成物塗佈於基體之方法並無特別限定,可舉例如澆鑄塗佈法、旋轉塗佈法、狹縫塗佈法、刮刀塗佈法、浸漬塗佈法、輥塗佈法、桿塗佈法、模塗佈法、噴墨法、印刷法(凸版、凹版、平版、網板印刷等)等。 [0061] 用以醯亞胺化的加熱溫度係通常為50~550℃的範圍內來做適當決定,較佳為超過150℃~510℃。藉由如此設定加熱溫度,可防止所得到之膜的脆弱化,同時可充分地進行醯亞胺化反應。加熱時間係因依加熱溫度而異,故無法一概地規定,通常為5分鐘~5小時。又,醯亞胺化率只要是在50~100%的範圍內即可。 [0062] 作為本發明中之加熱樣態的較佳之一例,可舉出於以50~150℃下加熱5分鐘~2小時後,直接階段性的提升加熱溫度,最終的在超過150℃~510℃下加熱30分鐘~4小時的手法。特別是以於50~150℃下加熱5分鐘~2小時後,在超過150℃~350℃下加熱5分鐘~2小時、最後在超過350℃~450℃下加熱30分鐘~4小時為較佳。 [0063] 加熱中使用的器具係可舉例如加熱板、烘箱等。加熱環境下係可為空氣下亦可為惰性氣體下,又,可為常壓下亦可為減壓下。 [0064] 剝離層的厚度係通常為0.01~50μm左右,就生產性之觀點而言較佳為0.05~20μm左右。尚,所期望的厚度係可藉由調整加熱前之塗膜的厚度來實現。 [0065] 以上說明之剝離層係具有與基體(特別是玻璃基體)為優異的密著性及與樹脂基板為適度的密著性和適度的剝離性。因此,本發明的剝離層係可適用於在可撓性電子裝置之製造製程中,在不對該裝置的樹脂基板造成損傷下,將該樹脂基板與形成於該樹脂基板上的電路等同時從基體進行剝離。 [0066] 以下,對於使用本發明的剝離層之可撓性電子裝置之製造方法之一例來進行說明。 使用本發明的剝離層形成用組成物,並依據上述之方法於玻璃基體上形成剝離層。藉由於該剝離層之上塗佈用以形成樹脂基板的樹脂溶液,並加熱該塗膜,從而形成介隔著本發明的剝離層而被固定於玻璃基體的樹脂基板。此時,為了覆蓋剝離層全體,而以比剝離層的面積更大的面積來形成基板。作為樹脂基板,可舉出以作為可撓性電子裝置之樹脂基板為代表性的由聚醯亞胺樹脂或丙烯酸樹脂、環烯烴聚合物樹脂所成之基板,作為用以形成其之樹脂溶液,可舉出聚醯亞胺溶液、聚醯胺酸溶液、丙烯酸聚合物溶液及環烯烴聚合物溶液等。該樹脂基板之形成方法只要依據常用方法即可。又,作為透明性高的樹脂基板係可示例以丙烯酸樹脂或環烯烴聚合物樹脂所形成的樹脂基板,特別是以波長400nm的光穿透率為80%以上者為較佳。 [0067] 接下來,於介隔著本發明的剝離層而被固定於基體的該樹脂基板之上形成所期望的電路,之後,例如沿著剝離層切割樹脂基板,連同該電路將樹脂基板從剝離層進行剝離,從而將樹脂基板與基體分離。此時,亦可以連同剝離層來切割基體的一部分。 [0068] 尚,日本特開2013-147599號公報中報告將迄今高輝度LED或三維半導體封裝等的製造中廣泛使用的雷射剝離法(LLO法)適用於可撓性顯示器之製造。上述LLO法係以從形成有電路等的面之相反的面,自玻璃基體側照射特定波長的光線,例如波長308nm的光線來作為特徵。所照射的光線係可穿透玻璃基體,僅有玻璃基體附近的聚合物(聚醯亞胺樹脂)吸收此光線而蒸發(昇華)。其結果,將可在不對決定顯示器之性能而被設置於樹脂基板上的電路等造成影響下,可選擇性地將樹脂基板從玻璃基體進行剝離。 [0069] 本發明的剝離層形成用組成物由於具有所謂可適用上述LLO法之能充分吸收特定波長(例如308nm)的光線之特徵,故可使用作為LLO法的犠牲層。因此,於介隔著使用本發明之組成物所形成的剝離層而被固定於玻璃基體的樹脂基板之上,形成所期望的電路,之後,實施LLO法照射308nm的光線時,僅該剝離層吸收此光線而蒸發(昇華)。據此,上述剝離層將成為犠牲(發揮作為犠牲層之作用),將可從玻璃基體來選擇性的剝離樹脂基板。 [實施例] [0070] 以下,舉出實施例來進而詳細地說明本發明,但本發明並非被限定於該等實施例。 [1]化合物之縮寫 p-PDA:p-苯二胺 TPDA:4,4”-二胺基-p-三聯苯 TFMB:2,2’-雙(三氟甲基)聯苯胺 BPDA:3,3’,4,4’-聯苯四羧酸二酐 PMDA:焦蜜石酸二酐 DMCBDA:1,3-二甲基環丁酸二酐 CBDA:環丁酸二酐 MMA:甲基丙烯酸甲酯 MAA:甲基丙烯酸 HEMA:甲基丙烯酸2-羥基乙酯 AIBN:偶氮雙異丁腈 CHMI:環己基馬來醯亞胺 EPOLEAD GT-401:丁烷四羧酸、四(3,4-環氧基環己基甲基)、修飾ε-己內酯、DAICEL(股)製 CELOXIDE 2021P:3’,4’-環氧基環己基甲基 3,4-環氧基環己烷羧酸酯、DAICEL(股)製 VESTAGON B 1530:Evonik Japan(股)製 NMP:N-甲基-2-吡咯啶酮 BCS:丁基溶纖劑 PGME:丙二醇單甲基醚 PGMEA:丙二醇單甲基醚乙酸酯 [0071] [2]重量平均分子量及分子量分布之測定方法 聚合物之重量平均分子量(以下簡稱為Mw)及分子量分布之測定係使用日本分光(股)製GPC裝置(管柱:Shodex製KD801及KD805;溶離液:二甲基甲醯胺/LiBr·H2
O(29.6mM)/H3
PO4
(29.6mM)/THF(0.1質量%);流量:1.0mL/分;管柱溫度:40℃;Mw:標準聚苯乙烯換算值)來進行。 [0072] [3]聚合物之合成 依據以下之方法來合成實施例及比較例中使用的各種聚合物。 尚,從所得到之含有聚合物的反應液中不會離析聚合物,而是如後述般,藉由稀釋反應液從而可調製樹脂基板形成用組成物或剝離層形成用組成物。 [0073] <合成例S1 聚醯胺酸(S1)之合成> 將p-PDA3.218g(30m mol)溶解於NMP88.2g中。於所得到之溶液中加入BPDA8.581g(29m mol),於氮環境下以23℃使其反應24小時。所得到之聚合物的Mw為107,300、分子量分布為4.6。 [0074] <合成例S2 聚醯胺酸(S2)之合成> 將p-PDA20.261g(0.1875 mol)與TPDA12.206g(0.0469 mol)溶解於NMP617.4g中,並冷卻至15℃後添加PMDA50.112g(0.2298 mol),於氮環境下以50℃使其反應48小時。所得到之聚合物的Mw為82,100、分子量分布為2.7。 [0075] <合成例S3 丙烯酸聚合物(S3)之合成> 將MMA7.20g(0.0719 mol)、HEMA7.20g(0.0553 mol)、CHMI10.8g(0.0603 mol)、MAA4.32g(0.0502 mol)、AIBN2.46g(0.0150 mol)溶解於PGMEA46.9g中,藉由以60~100℃使其反應20小時從而可得到丙烯酸聚合物溶液(固形分濃度40質量%)。所得到之丙烯酸聚合物的Mn為3,800、Mw為7,300。 [0076] <合成例L1 聚醯胺酸(L1)之合成> 將TFMB2.73g(8.53m mol)溶解於NMP38.5g中。於所得到之溶液中加入PMDA2.06g(9.47m mol),於氮環境下以23℃使其反應24小時。所得到之聚合物的Mw為17,100、分子量分布為1.7。將所得到之聚合物溶液1g添加至PGME10g之結果,未特別發現有析出。 [0077] <合成例L2 聚醯胺酸(L2)之合成> 將TFMB2.73g(8.53m mol)溶解於PGME40g。於所得到之溶液中,加入PMDA2.06g(9.47m mol),於氮環境下以23℃使其反應24小時。所得到之聚合物的Mw為20,100、分子量分布為1.8。 [0078] <合成例L3 聚醯胺酸(L3)之合成> 將TFMB23.7g(74.2m mol)溶解於NMP352g中。於所得到之溶液中,加入BPDA24.2g(82.5m mol),於氮環境下以23℃使其反應24小時。所得到之聚合物的Mw為16,500、分子量分布為1.7。將所得到之聚合物溶液1g添加至PGME10g之結果,未特別發現有析出。 [0079] <合成例L4 聚醯胺酸(L4)之合成> 將TFMB9.89g(30.9m mol)溶解於PGME380g中。於所得到之溶液中,加入BPDA10.0g(34.3m mol),於氮環境下以50℃使其反應72小時。所得到之聚合物的Mw為14,700、分子量分布為1.7。 [0080] <比較合成例HL1 聚醯胺酸(HL1)之合成> 將p-PDA3.90g(3.60m mol)溶解於NMP35.2g中。於所得到之溶液中,加入DMCBDA9.27g(4.00m mol),於氮環境下以23℃使其反應24小時。所得到之聚合物的Mw為45,000、分子量分布為3.9。將所得到之聚合物溶液1g添加至PGME10g之結果,析出聚醯胺酸。 [0081] <比較合成例HL2 聚醯胺酸(HL2)之合成> 將TFMB2.86g(8.91m mol)溶解於NMP35.2g中。於所得到之溶液中,加入CBDA1.94g(9.91m mol),於氮環境下以23℃使其反應24小時。所得到之聚合物的Mw為69,200、分子量分布為2.2。將所得到之聚合物溶液1g添加至PGME10g之結果,未特別發現有析出。 [0082] [4]樹脂基板形成用組成物之調製 依據以下之方法來調製樹脂基板形成用組成物。 [0083] <調製例1 樹脂基板形成用組成物F1> 將合成例S1所得到之反應液直接使用作為樹脂基板形成用組成物F1。 [0084] <調製例2 樹脂基板形成用組成物F2> 將合成例S2所得到之反應液直接使用作為樹脂基板形成用組成物F2。 [0085] <調製例3 樹脂基板形成用組成物F3> 於合成例S3所得到之反應液10g中,添加EPOLEADGT-401 0.60g與PGMEA11.8g,以23℃攪拌24小時來調製樹脂基板形成用組成物F3。 [0086] <調製例4 樹脂基板形成用組成物F4> 於合成例S3所得到之反應液10g中,添加CELOXIDE 2021P 0.80g與PGMEA11.8g,以23℃攪拌24小時來調製樹脂基板形成用組成物F4。 [0087] <調製例5 樹脂基板形成用組成物F5> 於合成例S3所得到之反應液10g中,添加VESTAGON B 1530 0.60g與PGMEA11.8g,以23℃攪拌24小時來調製樹脂基板形成用組成物F5。 [0088] <調製例6 樹脂基板形成用組成物F6> 於放入四氯化碳100g的茄型燒瓶中,添加Zeonor(註冊商標)1020R(日本Zeon(股)製、環烯烴聚合物樹脂)10g及GT-401 3g。將該溶液於氮環境下攪拌24小時並溶解,來調製樹脂基板形成用組成物F6。 [0089] <調製例7 樹脂基板形成用組成物F7> 於放入四氯化碳100g的茄型燒瓶中,添加Zeonor(註冊商標)1060R(日本Zeon(股)製、環烯烴聚合物樹脂)10g。將該溶液於氮環境下攪拌24小時並溶解,來調製樹脂基板形成用組成物F7。 [0090] [5]剝離層形成用組成物之調製 [實施例1-1] 於合成例L1所得到之反應液中,加入BCS與NMP,以使聚合物濃度成為5質量%、BCS成為20質量%之方式來做稀釋,從而得到剝離層形成用組成物。 [0091] [實施例1-2] 將合成例L2所得到之反應溶液直接作為剝離層形成用組成物。 [0092] [實施例1-3] 於合成例L3所得到之反應液中,加入BCS與NMP,以使聚合物濃度成為5質量%、BCS成為20質量%之方式來做稀釋,從而得到剝離層形成用組成物。 [0093] [實施例1-4] 將合成例L4所得到之反應溶液直接作為剝離層形成用組成物。 [0094] [比較例1-1] 於比較合成例HL1所得到之反應液中,加入BCS與NMP,以使聚合物濃度成為5質量%、BCS成為20質量%之方式來做稀釋,從而得到剝離層形成用組成物。 [0095] [比較例1-2] 於比較合成例HL2所得到之反應液中,加入BCS與NMP,以使聚合物濃度成為5質量%、BCS成為20質量%之方式來做稀釋,從而得到剝離層形成用組成物。 [0096] [6]剝離層及樹脂基板之製作 [實施例2-1] 使用旋轉塗佈機(條件:以旋轉數3,000rpm下約30秒),將實施例1-1所得到之剝離層形成用組成物L1塗佈於作為玻璃基體之100mm×100mm玻璃基板(以下相同)之上。 然後,使用加熱板以80℃將所得到之塗膜加熱10分鐘,之後,使用烘箱以300℃加熱30分鐘,並將加熱溫度昇溫至400℃為止(10℃/分,進而以400℃加熱30分鐘,於玻璃基板上形成厚度約0.1μm的剝離層,而得到附有剝離層的玻璃基板。尚,於昇溫之間,不從烘箱中取出附有膜的基板,而是在烘箱內加熱。 [0097] 使用棒塗佈機(間隙:250μm),將樹脂基板形成用組成物F1塗佈於上述所得到之玻璃基板上的剝離層(樹脂薄膜)之上。然後,使用加熱板以80℃將所得到之塗膜加熱30分鐘,之後,使用烘箱以140℃加熱30分鐘,將加熱溫度昇溫至210℃為止(2℃/分、以下相同),並以210℃加熱30分鐘,將加熱溫度昇溫至300℃為止,再以300℃加熱30分鐘,將加熱溫度昇溫至400℃為止,以400℃加熱60分鐘,於剝離層上形成厚度約20μm的樹脂基板,而得到附有樹脂基板·剝離層的玻璃基板。於昇溫之間,不從烘箱中取出附有膜的基板,而是在烘箱內加熱。 [0098] [實施例2-2] 除了使用樹脂基板形成用組成物F2來替代實施例2-1使用的樹脂基板形成用組成物F1以外,以與實施例2-1相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0099] [實施例2-3] 除了使用實施例1-2所得到之剝離層形成用組成物L2來替代實施例1-1所得到之剝離層形成用組成物L1以外,以與實施例2-1相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0100] [實施例2-4] 作為剝離層形成用組成物係使用實施例1-2所得到之剝離層形成用組成物L2,作為樹脂基板形成用組成物係使用實施例2-2中所利用的樹脂基板形成用組成物F2,並以與實施例2-1相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0101] [實施例2-5] 作為剝離層形成用組成物係使用實施例1-1所得到之剝離層形成用組成物L1,作為樹脂基板形成用組成物係使用樹脂基板形成用組成物F4,並以與實施例2-1相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃板。 [0102] [實施例2-6] 作為剝離層形成用組成物係使用實施例1-1所得到之剝離層形成用組成物L1,作為樹脂基板形成用組成物係使用樹脂基板形成用組成物F5,並以與實施例2-1相同之方法來製作剝離層及樹脂基板,而可得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0103] [實施例2-7] 作為剝離層形成用組成物係使用實施例1-2所得到之剝離層形成用組成物L2,作為樹脂基板形成用組成物係使用樹脂基板形成用組成物F5,並以與實施例2-1相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0104] [實施例2-8] 使用實施例1-1所得到之剝離層形成用組成物L1,並以與實施例2-1相同之方法來形成剝離層,而得到附有剝離層的玻璃基板。 之後,立即使用旋轉塗佈機(條件:以旋轉數200rpm下約15秒),將樹脂基板形成用組成物F6塗佈於前述玻璃基板上的剝離層(樹脂薄膜)之上。使用加熱板以80℃將所得到之塗膜加熱2分鐘,之後,使用加熱板以230℃加熱30分鐘,於剝離層上形成厚度約3μm的樹脂基板,而得到附有樹脂基板•剝離層的玻璃基板。之後,使用紫外可視分光光度計(島津製作所(股)製UV-2600)來測定光穿透率之結果,樹脂基板係顯示於400nm下為80%以上的穿透率。 [0105] [實施例2-9] 除了使用實施例1-2所得到之剝離層形成用組成物L2來替代實施例1-1所得到之剝離層形成用組成物L1以外,以與實施例2-8相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0106] [實施例2-10] 使用實施例1-1所得到之剝離層形成用組成物L1,以與實施例2-1相同之方法來形成剝離層,而得到附有剝離層的玻璃基板。 之後,立即使用旋轉塗佈機(條件:以旋轉數200rpm下約15秒),將樹脂基板形成用組成物F7塗佈於前述玻璃基板上的剝離層(樹脂薄膜)之上。使用加熱板以80℃將所得到之塗膜加熱2分鐘,之後,使用加熱板以230℃加熱30分鐘,於剝離層上形成厚度約3μm的樹脂基板,而得到附有樹脂基板•剝離層的玻璃基板。之後,使用紫外可視分光光度計(島津製作所(股)製UV-2600)來測定光穿透率之結果,樹脂基板係顯示於400nm下為80%以上的穿透率。 [0107] [實施例2-11] 除了使用實施例1-2所得到之剝離層形成用組成物L2來替代實施例1-1所得到之剝離層形成用組成物L1以外,以與實施例2-10相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0108] [比較例2-1~2-4] 除了使用比較例1-1~1-2所得到之剝離層形成用組成物來替代實施例1-1所得到之剝離層形成用組成物以外,以與上述實施例相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。剝離層與樹脂基板之組合係如表1所表示般。 [0109] [實施例2-12] 使用旋轉塗佈機(條件:以旋轉數3,000rpm下約30秒),將實施例1-3所得到之剝離層形成用組成物L3塗佈於作為玻璃基體之100mm×100mm玻璃基板(以下相同)之上。 然後,使用加熱板以80℃將所得到之塗膜加熱10分鐘,之後,使用烘箱以300℃加熱30分鐘,並將加熱溫度昇溫至400℃為止(10℃/分,進而以400℃加熱30分鐘,於玻璃基板上形成厚度約0.1μm的剝離層,而得到附有剝離層的玻璃基板。尚,於昇溫之間,不從烘箱中取出附有膜的基板,而是在烘箱內加熱。 [0110] 使用旋轉塗佈機(條件:以旋轉數800rpm下約10秒),將樹脂基板形成用組成物F3塗佈於上述所得到之玻璃基板上的剝離層(樹脂薄膜)之上。然後,使用加熱板以80℃將所得到之塗膜加熱30分鐘,之後,使用烘箱以230℃加熱30分鐘,於剝離層上形成厚度約3μm的丙烯酸基板。於昇溫之間,不從烘箱中取出附有膜的基板,而是在烘箱內加熱。 [0111] [實施例2-13] 除了使用樹脂基板形成用組成物F4來替代實施例2-12所利用的樹脂基板形成用組成物F3以外,以與實施例2-12相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0112] [實施例2-14] 除了使用樹脂基板形成用組成物F5來替代實施例2-12所利用的樹脂基板形成用組成物F3以外,以與實施例2-12相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0113] [實施例2-15] 除了使用實施例1-4所得到之剝離層形成用組成物L4來替代實施例1-3所得到之剝離層形成用組成物L3以外,以與實施例2-12相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0114] [實施例2-16] 作為剝離層形成用組成物係使用實施例1-4所得到之剝離層形成用組成物L4,作為樹脂基板形成用組成物係使用實施例2-14所利用的樹脂基板形成用組成物F5,並以與實施例2-12相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0115] [實施例2-17] 使用實施例1-3所得到之剝離層形成用組成物L3,以與實施例2-12相同之方法來形成剝離層,而得到附有剝離層的玻璃基板。 之後,立即使用旋轉塗佈機(條件:以旋轉數200rpm下約15秒),將樹脂基板形成用組成物F6塗佈於前述玻璃基板上的剝離層(樹脂薄膜)之上。使用加熱板以80℃將所得到之塗膜加熱2分鐘,之後,使用加熱板以230℃加熱30分鐘,於剝離層上形成厚度約3μm的樹脂基板,而得到附有樹脂基板•剝離層的玻璃基板。之後,使用紫外可視分光光度計(島津製作所(股)製UV-2600)來測定光穿透率之結果,樹脂基板係顯示於400nm下為80%以上的穿透率。 [0116] [實施例2-18] 除了使用實施例1-4所得到之剝離層形成用組成物L4來替代實施例1-3所得到之剝離層形成用組成物L3以外,以與實施例2-17相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0117] [實施例2-19] 使用實施例1-3所得到之剝離層形成用組成物L3,以與實施例2-12相同之方法來形成剝離層,而得到附有剝離層的玻璃基板。 之後,立即使用旋轉塗佈機(條件:以旋轉數200rpm下約15秒),將樹脂基板形成用組成物F7塗佈於前述玻璃基板上的剝離層(樹脂薄膜)之上。使用加熱板以80℃將所得到之塗膜加熱2分鐘,之後,使用加熱板以230℃加熱30分鐘,於剝離層上形成厚度約3μm的樹脂基板,而得到附有樹脂基板•剝離層的玻璃基板。之後,使用紫外可視分光光度計(島津製作所(股)製UV-2600)來測定光穿透率之結果,樹脂基板係顯示於400nm下為80%以上的穿透率。 [0118] [實施例2-20] 除了使用實施例1-4所得到之剝離層形成用組成物L4來替代實施例1-3所得到之剝離層形成用組成物L3以外,以與實施例2-19相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0119] [比較例2-5] 除了使用比較例1-1所得到之剝離層形成用組成物HL1來替代實施例1-3所得到之剝離層形成用組成物L3以外,以與實施例2-12相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。將剝離層與樹脂基板之組合係表示於表2般。 [0120] [比較例2-6] 作為剝離層形成用組成物係使用比較例1-2所得到之剝離層形成用組成物HL2,作為樹脂基板形成用組成物係使用實施例2-13所利用的樹脂基板形成用組成物F4,以與實施例2-12相同之方法來製作剝離層及樹脂基板,而得到附有剝離層的玻璃基板及附有樹脂基板•剝離層的玻璃基板。 [0121] [7]剝離層之溶劑耐性之評估 使用吸管將NMP與PGME以0.1ml滴入至所得到之實施例2-1~2-20、比較例2-1~2-6所製作的附有剝離層的玻璃基板之剝離層上。1分鐘後,利用純水洗淨該剝離層後,以目視來觀察滴入溶劑部分的剝離層之狀態,來評估剝離層之溶劑耐性。判定基準係如以下般。將結果表示於表1及表2。 <判定基準> ○:未特別發現液滴的痕跡、未發現溶解。 △:有發現液滴的痕跡但發現殘膜。 ×:呈現溶解。 所謂剝離層未溶解於滴入的溶劑中,係指於剝離層上形成樹脂基板時,未溶解在樹脂基板形成用組成物中所包含的有機溶劑之意,且從玻璃基板將不損傷樹脂基板而可剝離之意。 [0122] [8]剝離性之評估 對於上述實施例2-1~2-20及比較例2-1~2-6所得到之附有樹脂基板•剝離層的玻璃基板,藉由下述方法來確認剝離層與玻璃基板之剝離性。尚,下述之試驗係以相同的玻璃基板來進行。 [0123] <剝離層與玻璃基板之剝離性評估> 將實施例2-1~2-20及比較例2-1~2-6所得到之附有剝離層的玻璃基板上的剝離層交叉切割(縱橫1mm間隔、以下相同),並進行100格的塊切。即,藉由此交叉切割,形成100個1mm見方的方格目。 然後,將黏著膠帶貼附於此100格塊切部分,並剝除該膠帶基於以下之基準(5B~0B、B、A、AA)來評估剝離之程度。 進而,於全部為經剝離的基板之中,使用實施例2-5~2-20所製作的附有樹脂基板•剝離層的玻璃基板來實施剝離力評估試驗。試驗方法係使用刀片以貫穿之方式切入至樹脂基板的背面,來使附有樹脂基板•剝離層的玻璃基板的樹脂基板成為25mm×50mm寬的長方形,以製成長條。進而,於製作的長條上黏貼賽珞凡膠帶(NichibanCT-24)後,使用Autograph AG-500N(島津製作所(股)製),相對於基板的面以90度,即,朝垂直方向進行剝離來測定剝離力,並將100%剝離(全部剝離)、尚且剝離力為未滿0.1N/25mm者設為AAA。 將以上之結果表示於表1及表2。 <判定基準> 5B:0%剝離(無剝離) 4B:未滿5%的剝離 3B:5~未滿15%的剝離 2B:15~未滿35%的剝離 1B:35~未滿65%的剝離 0B:65%~未滿80%的剝離 B:80%~未滿95%的剝離 A:95%~未滿100%的剝離 AA:100%剝離(全部剝離) AAA:100%剝離且剝離力為未滿0.1N/25mm [0124] <剝離層與樹脂基板之剝離性評估> 對於實施例2-1~2-20及比較例2-1~2-6所得到之附有樹脂基板•剝離層的玻璃基板,依據與上述之剝離性評估相同之程序來評估其剝離性。將結果表示於表1及表2。 [0125][0126][0127] 如表1及表2所表示般,可確認實施例2-1~2-20的剝離層係與玻璃基板之密著性為優異,且與樹脂膜為輕易剝落。又,從溶解性試驗之結果亦可確認,亦未溶解於樹脂基板形成用組成物中所包含的有機溶劑中。 另一方面,可確認比較例2-1~2-6的剝離層雖與玻璃基板之密著性為優異,但與樹脂基板之剝離性為差。[Best Mode for Carrying Out the Invention] The present invention will be described in more detail below. The composition for forming a release layer according to the present invention includes a polyamic acid represented by the following formula (1) and an organic solvent. [0019] In the present invention, the so-called release layer is a layer provided directly above a substrate (such as a glass substrate) on which a resin substrate is to be formed. As a typical example, for example, in the manufacturing process of a flexible electronic device, a resin substrate of a flexible electronic device formed with the substrate and a polyimide resin, an acrylic resin, or the like is used to make the resin The substrate is fixedly provided in a predetermined process, and after an electronic circuit or the like is formed on the resin substrate, a release layer is provided so that the resin substrate can be easily peeled from the substrate. [0020] [0021] In the formula (1), X is an aromatic group represented by the following formula (2a) or (2b), and Y is a divalent aromatic group having a fluorine atom. When X is a formula (2a), Z is independently an aromatic group represented by the following formula (3a) or (4a); if X is formula (2b), it is independently an aromatic group represented by the following formula (3b) or (4b) Family base, m is a natural number. [0022] In the X, the aromatic group represented by the formula (2a) is preferably an aromatic group represented by the following formula (7a) or (8a), and the aromatic group represented by the formula (2b) It is preferably an aromatic group represented by the following formula (7b) or (8b). [0023] [0024] In the above Z, the aromatic group represented by the formula (3a) or (4a) is preferably an aromatic group represented by the following formula (9a) or (10a), and the formula (3b) Or, the aromatic group represented by (4b) is preferably an aromatic group represented by the following formula (9b) or (10b). [0025] [0026] The Y is preferably an aromatic group having a fluorine atom and containing 1 to 5 benzene rings, and more preferably an aromatic group selected from the following formula (5), selected from the following The aromatic group of the formula (6) is more preferred. [0027] [0028] [0029] The above-mentioned m may be a natural number, and a natural number of 100 or less is preferable, and a natural number of 2 to 100 is more preferable. [0030] The polyamidic acid represented by the above formula (1) is obtained by reacting a specified tetracarboxylic dianhydride component with a diamine component. As the tetracarboxylic dianhydride component, pyromellitic dianhydride or biphenyltetracarboxylic dianhydride is used. The diamine component may be any of an alicyclic chain, an alicyclic ring, an aromatic ring, and an aromatic alicyclic ring as long as it has a fluorine atom. However, in the present invention, in particular, the solubility in a low-viscosity solvent is improved. From the viewpoint of improving the function of the release layer of the obtained film, the pyromellitic dianhydride or biphenyltetracarboxylic dianhydride is reacted with a diamine component containing the aromatic diamine to The obtained polyamic acid is more preferred, and the fully aromatic polyamino acid obtained by reacting the above-mentioned tetracarboxylic dianhydride with an aromatic diamine is even more preferred. Hereinafter, a pyromellitic dianhydride component, a biphenyltetracarboxylic dianhydride, and a diamine component which can be used for synthesizing the polyamidic acid having the structure represented by the formula (1) will be described in detail. [0031] The pyromellitic dianhydride is not particularly limited as long as it has two dicarboxylic anhydride sites in the molecule and has a benzene ring. Specific examples thereof include pyromelite dianhydride and benzene-1,2,3,4-tetracarboxylic dianhydride. In the present invention, pyromelite dianhydride is preferred. These systems can be used alone or in combination of two or more. [0032] The biphenyltetracarboxylic dianhydride is not particularly limited as long as it has two dicarboxylic anhydride sites in the molecule and has biphenyl. Specific examples thereof include 2,2 ', 3,3'-biphenyltetracarboxylic dianhydride, 2,3,3', 4'-biphenyltetracarboxylic dianhydride, 3,3 ', 4 , 4'-biphenyltetracarboxylic dianhydride, etc. In the present invention, 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride is preferred. These systems can be used alone or in combination of two or more. [0033] On the other hand, the aromatic diamine is not particularly limited as long as it is two amine groups having a fluorine atom and having a direct bond with an aromatic ring in the molecule. The aromatic diamine is one to five benzene rings. In particular, 1 to 2 and more preferably two aromatic diamines are included. A fluoroalkyl group or a perfluoroalkyl group is more preferable, and a perfluoroalkyl group is more preferable. Examples of the perfluoroalkyl group include trifluoromethyl, pentafluoroethyl, n-heptafluoropropyl, and i-heptafluoropropyl. [0034] Specific examples of the aromatic diamine include 5-trifluoromethylbenzene-1,3-diamine, 5-trifluoromethylbenzene-1,2-diamine, and 2,2 ' -Bis (trifluoromethyl) -4,4'-diaminobiphenyl and 3,3'-bis (trifluoromethyl) biphenyl-4,4'-diamine, etc., but it is not limited to Of these. In the present invention, even among these, 2,2'-bis (trifluoromethyl) -4,4'-diaminobiphenyl can be suitably used. These systems can be used alone or in combination of two or more. [0035] Since the feed ratio of the diamine component and the tetracarboxylic dianhydride component is determined appropriately by taking into consideration the target molecular weight or molecular weight distribution, the type of the diamine or the tetracarboxylic dianhydride, and so on, it cannot be specified in general, However, in order to obtain the polyamic acid of the formula (1), it is preferable to increase the molar number of the tetracarboxylic dianhydride component to the molar number of the diamine component. As a specific mole ratio, with respect to 1 mole of the diamine component, 1.05 to 2.5 moles of the tetracarboxylic dianhydride component is preferable, 1.07 to 1.5 moles is more preferable, and 1.1 to 1.3 moles is preferable. Further preferred. [0036] By reacting the tetracarboxylic dianhydride component and the diamine component described above, the polyamic acid contained in the release layer forming composition of the present invention can be obtained. [0037] The organic solvent used in the synthesis of polyamidic acid is not particularly limited as long as it does not adversely affect the reaction, and specific examples thereof include m-cresol, 2-pyrrolidone, and N -Methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone, N-vinyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethyl Formamidine, 3-methoxy-N, N-dimethylpropanamide, 3-ethoxy-N, N-dimethylpropanamide, 3-propoxy-N, N-dimethyl Propylpropylamine, 3-isopropoxy-N, N-dimethylpropylamine, 3-butoxy-N, N-dimethylpropylamine, 3-sec-butoxy-N, N-dimethylpropanamide, 3-tert-butoxy-N, N-dimethylpropanamide, γ-butyrolactone, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, and the like. The organic solvent may be used alone or in combination of two or more. [0038] The reaction temperature when synthesizing polyamidic acid may be appropriately set within a range from the melting point to the boiling point of the solvent used, and is usually about 0 to 100 ° C, but in order to prevent the obtained polyamidoamine From the viewpoint of the imidation of the acid in the solution to maintain the high content of the polyamidic acid unit, it is preferably about 0 to 70 ° C, more preferably about 0 to 60 ° C, and more preferably 0 to 50 ° C about. Since the reaction time depends on the reaction temperature or the reactivity of the raw materials, it cannot be specified in general, but it is usually about 1 to 100 hours. [0039] The weight average molecular weight of the polyamic acid obtained in such a manner is usually about 5,000 to 500,000, but from the viewpoint of improving the function of the release layer of the obtained film, it is preferably 10,000 to About 200,000, and preferably about 10,000 to 150,000. In the present invention, the weight average molecular weight is a polystyrene conversion value obtained by measurement by gel permeation chromatography (GPC). [0040] Specific examples of the polyamidic acid that can be suitably used in the present invention include those represented by the following formulae, but they are not limited thereto. [0041] (In the formula, m1 and m2 represent the number of repeating units, and the total of m1 and m2 is the same as the above-mentioned m.) [0042] (In the formula, m1 and m2 represent the number of repeating units, and the total of m1 and m2 is the same as the above-mentioned m.) [0043] The composition system for forming a release layer of the present invention contains an organic solvent. As the organic solvent, the same as the specific examples of the reaction solvent of the above reaction can be used. Since the polyamidic acid of the present invention is sufficiently dissolved and a composition having a high uniformity is easily prepared, it is selected from the group consisting of amines, alcohols Organic solvents of the group consisting of amines, esters, ethers and ketones are preferred, and it is particularly preferred that they contain at least one of the structures represented by the following formulae (S1) to (S7). [0044] [0045] In the above formula, R 1 ~ R 8 They are each independently a hydrogen atom or an alkyl group having 1 to 10 carbon atoms, preferably 1 to 5 carbon atoms. R 9 And R 10 Each of them is a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, preferably 1 to 5 carbon atoms, or a fluorenyl group having 1 to 5 carbon atoms, preferably 1 to 5 carbon atoms. The b system indicates that the natural number is preferably a natural number of 1 to 5, and a natural number of 1 to 3 is more preferable. The n-series means that natural numbers of 1 to 5 are preferable, and natural numbers of 1 to 3 are more preferable. [0046] Specific examples of the alkyl group having 1 to 10 carbon atoms may be linear, branched, or cyclic, and examples include methyl, ethyl, n-propyl, isopropyl, Cyclopropyl, n-butyl, isobutyl, s-butyl, t-butyl, n-pentyl, 1-methyl-n-butyl, 2-methyl-n-butyl, 3- Methyl-n-butyl, 1,1-dimethyl-n-propyl, 1,2-dimethyl-n-propyl, 2,2-dimethyl-n-propyl, 1-ethyl -N-propyl, cyclopentyl, n-hexyl, 1-methyl-n-pentyl, 2-methyl-n-pentyl, 3-methyl-n-pentyl, 4-methyl- n-pentyl, 1,1-dimethyl-n-butyl, 1,2-dimethyl-n-butyl, 1,3-dimethyl-n-butyl, 2,2-dimethyl -N-butyl, 2,3-dimethyl-n-butyl, 3,3-dimethyl-n-butyl, 1-ethyl-n-butyl, 2-ethyl-n- Butyl, 1,1,2-trimethyl-n-propyl, 1,2,2-trimethyl-n-propyl, 1-ethyl-1-methyl-n-propyl, 1- Ethyl-2-methyl-n-propyl, cyclohexyl, n-heptyl, n-octyl, n-nonyl, n-decyl, and the like. [0047] Specific examples of the fluorenyl group having 1 to 10 carbon atoms include methyl fluorenyl, ethyl fluorenyl, propyl fluorenyl, butyl fluorenyl, isobutyl fluorenyl, pentyl fluorenyl, isopentyl fluorenyl, hexamethylene, and isohexan Fluorenyl, heptyl, isoheptyl, octyl, isooctyl, nonyl, isononyl, decyl, isodecyl and benzyl. [0048] Specific examples of the organic solvent represented by the formulae (S1) to (S7) include the following. Formula (S1): 3-methoxy-N, N-dimethylpropanamide, 3-ethoxy-N, N-dimethylpropanamide, 3-propoxy-N, N-di Methamphetamine, 3-isopropoxy-N, N-dimethylpropanamide, 3-butoxy-N, N-dimethylpropanamide, 3-sec-butoxy-N , N-dimethylpropanilamine, 3-tert-butoxy-N, N-dimethylpropanilamine Formula (S2): 2-pyrrolidone, N-methyl-2-pyrrolidone, N-ethyl-2-pyrrolidone formula (S3): N, N-dimethylformamide, N, N-dimethylacetamide, N, N-dimethylpropanamide, N, N-dimethylbutyramine (S4): γ-butyrolactone (S5): cyclopentanone, cyclohexanone, cycloheptanone (S6): methyl lactate, ethyl lactate, lactic acid n- Propyl ester, n-butyl lactate, isoamyl lactate, methyl 2-hydroxyisobutyrate, ethyl 2-hydroxyisobutyrate, propyl 2-hydroxyisobutyrate, butyl 2-hydroxyisobutyrate (S7): ethyl cellosolve, butyl cellosolve, ethylene glycol, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, 1-butoxy-2-propanol Propylene glycol monomethyl ether, propylene glycol-1-monomethyl ether-2-acetate, propylene glycol-1-monoethyl ether-2-acetate [0049] In the present invention, even among these, N- 2-Pyrrolidone, butyl cellosolve, propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate are preferred, and propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate are more preferred, Propylene glycol monomethyl ether is more preferred. These organic solvents may be used alone or in combination of two or more. [0050] Especially when the propylene glycol monomethyl ether and propylene glycol monomethyl ether acetate are used as the above-mentioned organic solvent (that is, a low viscosity solvent), it is possible to obtain and also be suitable for slit coating. A composition for forming a low-viscosity release layer. When the composition for forming a release layer of the present invention is used for slit coating, the proportion of the low-viscosity solvent in the entire solvent is preferably 60% by mass or more, and 70% by mass or more. To be more preferable, 80% by mass or more is the most preferable. [0051] Even if it is a solvent that cannot dissolve polyamic acid when used alone, as long as the polyamic acid does not precipitate, it can be used for the preparation of a composition. In particular, ethyl carbitol, butyl carbitol, ethyl carbitol acetate, 1-phenoxy-2-propanol, propylene glycol monoacetate, propylene glycol diacetate, Solvents with low surface tension such as dipropylene glycol and 2- (2-ethoxypropoxy) propanol. Accordingly, it is known that the uniformity of a coating film can be improved when applied to a substrate, and can be suitably used in the present invention. [0052] The composition for forming a release layer of the present invention can be prepared by a usual method. As a preferred example of the preparation method, the reaction solution containing the target polyamic acid obtained by the method described above is filtered, and the concentration of the obtained filtrate is specified using the organic solvent described above. Concentration. By adopting such a method, it is possible not only to reduce the mixing of impurities that can cause deterioration of the adhesiveness, peelability, etc. of the release layer manufactured from the obtained composition, but also to effectively obtain the release layer formation.组合 物。 Composition. [0053] The concentration of the polyamic acid in the release layer forming composition of the present invention is appropriately set in consideration of the thickness of the release layer to be produced, the viscosity of the composition, etc., and is generally about 1 to 30% by mass. It is preferably about 1 to 20% by mass. By setting such a concentration, a peelable layer having a thickness of about 0.05 to 5 μm can be obtained with good reproducibility. The concentration of the polyamic acid can be adjusted by using the amount of the diamine component, the tetracarboxylic dianhydride component, and the aromatic monoamine as raw materials of the polyamino acid, or when the isolated polyamic acid is dissolved in a solvent The amount is adjusted. [0054] In addition, the viscosity of the composition for forming a release layer of the present invention is appropriately set in consideration of the thickness of the release layer to be produced, and in particular, when a film having a thickness of about 0.05 to 5 μm with good reproducibility is targeted. In this case, the temperature is usually about 10 to 10,000 mPa · s at 25 ° C, preferably about 20 to 5,000 mPa · s. When the composition for forming a release layer of the present invention is used in the case of a slit coating method, its viscosity is preferably about 2 to 100 mPa · s, and from the viewpoint of productivity, 2 to 25 mPa · s Left and right are better. [0055] Here, the viscosity can be measured by using a commercially available viscometer for measuring the viscosity of a liquid, referring to, for example, a program described in JIS K7117-2, and using a temperature of the composition at 25 ° C. It is preferable to use a cone-and-plate rotary viscometer as the viscosity meter, and it is preferable to use the same type of viscosity meter, using 1 ° 34 '× R24 as the standard cone rotor, and The measurement was performed under the condition that the temperature of the composition was 25 ° C. An example of such a rotary viscosity meter is TVE-25L manufactured by Toki Sangyo Co., Ltd. [0056] In addition, in addition to the polyamic acid and the organic solvent, the composition for forming a release layer of the present invention may contain a cross-linking agent and the like in order to improve the film strength, for example. [0057] By applying the composition for forming a release layer of the present invention described above to a substrate, and heating the resulting coating film, the polyamic acid is thermally imidized to obtain an adhesive having excellent adhesion to the substrate. A release layer made of a polyimide film, which has a good adhesion to the resin substrate and a moderate peeling property. [0058] When such a release layer of the present invention is formed on a substrate, the release layer may be formed on a part of the surface of the substrate or may be formed on the entire surface. As a form of forming a peeling layer on a part of the surface of the substrate, there is a form in which the peeling layer is formed only within a specified range of the surface of the substrate. The entire surface of the substrate is formed as a dot pattern, Line and space patterns and the like. In the present invention, the term “base system” refers to a person who can apply the composition for forming a release layer of the present invention on the surface thereof, and means that it can be used by a manufacturer of a flexible electronic device or the like. [0059] Examples of the substrate (substrate) include glass, plastic (polycarbonate, polymethacrylic ester, polystyrene, polyester, polyolefin, epoxy, melamine, triethyl cellulose, ABS, AS, norbornene-based resin), metal (silicon wafer, etc.), wood, paper, slate, etc. In the present invention, in particular, since the release layer has sufficient adhesion, a glass substrate can be suitably used. The surface of the substrate may be composed of a single material or two or more materials. As a state in which the surface of the substrate is composed of 2 or more materials, a certain range of the surface of the substrate is composed of a certain material, and the remaining range is composed of other materials on the entire surface of the substrate. Some materials exist in other materials in the form of dot patterns, line and space patterns, and the like. [0060] The method for applying the composition for forming a release layer of the present invention to a substrate is not particularly limited, and examples thereof include a casting coating method, a spin coating method, a slit coating method, a doctor blade coating method, and a dip coating. Cloth method, roll coating method, rod coating method, die coating method, inkjet method, printing method (relief, gravure, lithography, screen printing, etc.) and the like. [0061] The heating temperature for the imidization is generally determined within a range of 50 to 550 ° C, and preferably over 150 ° C to 510 ° C. By setting the heating temperature in this manner, the obtained film can be prevented from being weakened, and at the same time, the amidine imidization reaction can be sufficiently performed. The heating time varies depending on the heating temperature, so it cannot be specified in general, but it is usually 5 minutes to 5 hours. The fluorene imidization rate may be within a range of 50 to 100%. [0062] As a preferred example of the heating state in the present invention, after heating at 50 to 150 ° C. for 5 minutes to 2 hours, the heating temperature can be directly increased stepwise, and the final heating temperature can be higher than 150 ° C. to 510 Heating at ℃ for 30 minutes to 4 hours. In particular, after heating at 50 to 150 ° C for 5 minutes to 2 hours, heating at more than 150 ° C to 350 ° C for 5 minutes to 2 hours and finally heating at more than 350 ° C to 450 ° C for 30 minutes to 4 hours . [0063] The appliance used for heating may be, for example, a hot plate or an oven. The heating environment can be under air or under inert gas, and it can also be under normal pressure or under reduced pressure. [0064] The thickness of the release layer is usually about 0.01 to 50 μm, and from the viewpoint of productivity, it is preferably about 0.05 to 20 μm. However, the desired thickness can be achieved by adjusting the thickness of the coating film before heating. [0065] The peeling layer described above has excellent adhesion to a substrate (especially a glass substrate), and moderate adhesion to a resin substrate and moderate peelability. Therefore, the release layer of the present invention can be applied to a flexible electronic device without removing the resin substrate of the device from the substrate at the same time as the circuit formed on the resin substrate without damaging the resin substrate of the device. Perform peeling. [0066] Hereinafter, an example of a method for manufacturing a flexible electronic device using the release layer of the present invention will be described. Using the composition for forming a release layer of the present invention, a release layer is formed on a glass substrate according to the method described above. A resin solution for forming a resin substrate is applied on the release layer, and the coating film is heated to form a resin substrate that is fixed to a glass substrate through the release layer of the present invention. At this time, in order to cover the entire release layer, the substrate is formed with an area larger than the area of the release layer. Examples of the resin substrate include a polyimide resin, an acrylic resin, and a cycloolefin polymer resin, which are representative of a resin substrate for a flexible electronic device, as a resin solution for forming the substrate. Examples thereof include polyimide solutions, polyamidic acid solutions, acrylic polymer solutions, and cycloolefin polymer solutions. The method for forming the resin substrate may be in accordance with a commonly used method. In addition, as the highly transparent resin substrate, a resin substrate formed of an acrylic resin or a cycloolefin polymer resin can be exemplified, and a light transmittance with a wavelength of 400 nm of 80% or more is preferable. [0067] Next, a desired circuit is formed on the resin substrate fixed to the base with the release layer of the present invention interposed therebetween, and then, for example, the resin substrate is cut along the release layer, and the resin substrate is removed from the circuit together with the circuit. The release layer is peeled to separate the resin substrate from the substrate. At this time, a part of the substrate may be cut together with the release layer. [0068] It is reported in Japanese Patent Application Laid-Open No. 2013-147599 that a laser lift-off method (LLO method) widely used in the manufacture of high-brightness LEDs, three-dimensional semiconductor packages, and the like has been applied to the manufacture of flexible displays. The above-mentioned LLO method is characterized by irradiating light of a specific wavelength, for example, light of a wavelength of 308 nm from the glass substrate side from the side opposite to the surface on which a circuit or the like is formed. The irradiated light can penetrate the glass substrate, and only the polymer (polyimide resin) near the glass substrate absorbs this light and evaporates (sublimates). As a result, the resin substrate can be selectively peeled from the glass substrate without affecting the circuit or the like provided on the resin substrate, which determines the performance of the display. [0069] Since the composition for forming a release layer according to the present invention has a characteristic that it can sufficiently absorb light of a specific wavelength (for example, 308 nm) to which the above-mentioned LLO method can be applied, it can be used as a coating layer for the LLO method. Therefore, when a desired circuit is formed on a resin substrate fixed to a glass substrate via a release layer formed by using the composition of the present invention, and then, when the LLO method is used to irradiate light at 308 nm, only the release layer is used. It absorbs this light and evaporates (sublimates). According to this, the above-mentioned peeling layer will serve as a substrate (playing a role as a substrate), and the resin substrate can be selectively peeled from the glass substrate. [Examples] [0070] Hereinafter, the present invention will be described in detail with reference to examples, but the present invention is not limited to these examples. [1] Abbreviation of compound p-PDA: p-phenylenediamine TPDA: 4,4 "-diamino-p-terphenyl TFMB: 2,2'-bis (trifluoromethyl) benzidine BPDA: 3, 3 ', 4,4'-biphenyltetracarboxylic dianhydride PMDA: pyromelite dianhydride DMCBDA: 1,3-dimethylcyclobutyric dianhydride CBDA: cyclobutyric dianhydride MMA: methyl methacrylate Esters MAA: HEMA methacrylate: 2-hydroxyethyl methacrylate AIBN: azobisisobutyronitrile CHMI: cyclohexylmaleimide EPOLEAD GT-401: butane tetracarboxylic acid, tetrakis (3,4- (Epoxycyclohexylmethyl), modified ε-caprolactone, CELOXIDE 2021P manufactured by DAICEL (stock): 3 ', 4'-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate VESTAGON B 1530 made by DAICEL (stock): NMP: N-methyl-2-pyrrolidone made by Evonik Japan (stock): BCS: butyl cellosolve PGME: propylene glycol monomethyl ether PGMEA: propylene glycol monomethyl ether acetate [2] Method for measuring weight average molecular weight and molecular weight distribution The weight average molecular weight (hereinafter referred to as Mw) of polymer and the measurement of molecular weight distribution are measured using a GPC device (column: KD801 manufactured by Shodex) and KD805; eluent: dimethylformamide / LiBr · H 2 O (29.6mM) / H 3 PO 4 (29.6 mM) / THF (0.1% by mass); flow rate: 1.0 mL / min; column temperature: 40 ° C; Mw: standard polystyrene conversion value). [3] Synthesis of polymer Various polymers used in the examples and comparative examples were synthesized according to the following methods. The polymer is not isolated from the obtained polymer-containing reaction solution, but a composition for resin substrate formation or a release layer formation can be prepared by diluting the reaction solution as described later. [0073] <Synthesis of Synthesis Example S1 Polyamidic Acid (S1)> p-PDA3.218g (30m mol) was dissolved in NMP88.2g. To the obtained solution was added 8.581 g (29 m mol) of BPDA, and the mixture was allowed to react at 23 ° C. for 24 hours under a nitrogen environment. The obtained polymer had a Mw of 107,300 and a molecular weight distribution of 4.6. [0074] <Synthesis of Synthesis Example S2 Polyamidic Acid (S2)> p-PDA20.261g (0.1875 mol) and TPDA12.206g (0.0469 mol) were dissolved in NMP617.4g, and PMDA50 was added after cooling to 15 ° C. .112 g (0.2298 mol) was reacted at 50 ° C for 48 hours under a nitrogen environment. The obtained polymer had an Mw of 82,100 and a molecular weight distribution of 2.7. [Synthesis of Synthesis Example S3 Acrylic Polymer (S3)> MMA7.20g (0.0719 mol), HEMA7.20g (0.0553 mol), CHMI10.8g (0.0603 mol), MAA4.32g (0.0502 mol), AIBN2 .46 g (0.0150 mol) was dissolved in 46.9 g of PGMEA and reacted at 60 to 100 ° C. for 20 hours to obtain an acrylic polymer solution (solid content concentration: 40% by mass). Mn of the obtained acrylic polymer was 3,800 and Mw was 7,300. [0076] <Synthesis of Synthesis Example L1 Polyamic Acid (L1)> 2.73 g (8.53 m mol) of TFMB was dissolved in 38.5 g of NMP. 2.06g (9.47m mol) of PMDA was added to the obtained solution, and it was made to react at 23 degreeC for 24 hours in nitrogen environment. The obtained polymer had a Mw of 17,100 and a molecular weight distribution of 1.7. As a result of adding 1 g of the obtained polymer solution to 10 g of PGME, no precipitation was particularly observed. [0077] <Synthesis of Synthesis Example L2 Polyamidic Acid (L2)> 2.73 g (8.53 m mol) of TFMB was dissolved in 40 g of PGME. To the obtained solution, 2.06 g (9.47 m mol) of PMDA was added, and the mixture was reacted at 23 ° C. for 24 hours under a nitrogen environment. The obtained polymer had a Mw of 20,100 and a molecular weight distribution of 1.8. [0078] <Synthesis of Synthesis Example L3 Polyamidic Acid (L3)> 23.7 g (74.2 m mol) of TFMB was dissolved in 352 g of NMP. 24.2 g (82.5 m mol) of BPDA was added to the obtained solution, and the mixture was allowed to react at 23 ° C. for 24 hours under a nitrogen environment. The obtained polymer had a Mw of 16,500 and a molecular weight distribution of 1.7. As a result of adding 1 g of the obtained polymer solution to 10 g of PGME, no precipitation was particularly observed. [0079] <Synthesis of Synthesis Example L4 Polyamic Acid (L4)> TFMB 9.89 g (30.9 m mol) was dissolved in PGME 380 g. 10.0 g (34.3 m mol) of BPDA was added to the obtained solution, and it was made to react at 50 degreeC for 72 hours in nitrogen environment. The obtained polymer had a Mw of 14,700 and a molecular weight distribution of 1.7. [0080] <Synthesis of Comparative Synthesis Example HL1 Polyamic Acid (HL1)> p-PDA3.90g (3.60m mol) was dissolved in 35.2g of NMP. DMCBDA9.27g (4.00m mol) was added to the obtained solution, and it was made to react at 23 degreeC for 24 hours in nitrogen environment. The obtained polymer had a Mw of 45,000 and a molecular weight distribution of 3.9. As a result of adding 1 g of the obtained polymer solution to 10 g of PGME, polyamic acid was precipitated. [0081] <Synthesis of Comparative Synthesis Example HL2 Polyamidic Acid (HL2)> 2.86 g (8.91 m mol) of TFMB was dissolved in 35.2 g of NMP. 1.94 g (9.91 m mol) of CBDA was added to the obtained solution, and the mixture was reacted at 23 ° C. for 24 hours under a nitrogen environment. The obtained polymer had a Mw of 69,200 and a molecular weight distribution of 2.2. As a result of adding 1 g of the obtained polymer solution to 10 g of PGME, no precipitation was particularly observed. [0081] [4] Preparation of Composition for Forming Resin Substrate The composition for forming the resin substrate was prepared according to the following method. [0083] <Preparation Example 1 Composition for Resin Substrate Formation F1> The reaction solution obtained in Synthesis Example S1 was used as it is as the composition F1 for resin substrate formation. [0083] <Preparation Example 2 Composition F2 for Resin Substrate Formation> The reaction solution obtained in Synthesis Example S2 was directly used as the composition F2 for resin substrate formation. [0085] <Preparation Example 3 Composition for Resin Substrate Formation F3> To 10 g of the reaction solution obtained in Synthesis Example S3, 0.60 g of EPOLEADGT-401 and 11.8 g of PGMEA were added and stirred at 23 ° C. for 24 hours to prepare a resin substrate formation. Composition F3. [Preparation Example 4 Composition F4 for Resin Substrate Formation] To 10 g of the reaction solution obtained in Synthesis Example S3, 0.80 g of CELOXIDE 2021P and 11.8 g of PGMEA were added, and the composition for resin substrate formation was stirred at 23 ° C. for 24 hours.物 F4. [0085] <Preparation Example 5 Composition F5 for resin substrate formation> To 10 g of the reaction solution obtained in Synthesis Example S3, 0.60 g of VESTAGON B 1530 and 11.8 g of PGMEA were added and stirred at 23 ° C. for 24 hours to prepare a resin substrate for formation. Composition F5. [Preparation Example 6 Composition F6 for Resin Substrate Formation] To an eggplant-shaped flask in which 100 g of carbon tetrachloride was put, Zeonor (registered trademark) 1020R (Cycloolefin polymer resin manufactured by Zeon Corporation) was added. 10g and GT-401 3g. This solution was stirred and dissolved in a nitrogen environment for 24 hours to prepare a composition F6 for resin substrate formation. [Preparation Example 7 Composition F7 for Resin Substrate Formation] To an eggplant-shaped flask containing 100 g of carbon tetrachloride, Zeonor (registered trademark) 1060R (Cycloolefin polymer resin manufactured by Zeon Corporation) was added. 10g. This solution was stirred and dissolved in a nitrogen environment for 24 hours to prepare a resin substrate forming composition F7. [5] Preparation of composition for forming peeling layer [Example 1-1] To the reaction solution obtained in Synthesis Example L1, BCS and NMP were added so that the polymer concentration became 5 mass% and BCS became 20 The composition was diluted by mass% to obtain a composition for forming a release layer. [Example 1-2] The reaction solution obtained in Synthesis Example L2 was directly used as a composition for forming a release layer. [Example 1-3] To the reaction solution obtained in Synthesis Example L3, BCS and NMP were added to dilute the polymer so that the polymer concentration became 5% by mass and BCS became 20% by mass, thereby obtaining peeling. Composition for layer formation. [Example 1-4] The reaction solution obtained in Synthesis Example L4 was directly used as a composition for forming a release layer. [Comparative Example 1-1] To the reaction solution obtained in Comparative Synthesis Example HL1, BCS and NMP were added so that the concentration of the polymer was 5 mass% and the BCS was 20 mass%, and diluted to obtain Composition for release layer formation. [Comparative Example 1-2] To the reaction solution obtained in Comparative Synthesis Example HL2, BCS and NMP were added so that the polymer concentration became 5% by mass and BCS was diluted by 20% by mass to obtain Composition for release layer formation. [6] Production of Release Layer and Resin Substrate [Example 2-1] Using a spin coater (condition: about 30 seconds at a number of rotations of 3,000 rpm), the release layer obtained in Example 1-1 was used. The forming composition L1 was applied on a 100 mm × 100 mm glass substrate (the same applies hereinafter) as a glass substrate. Then, the obtained coating film was heated at 80 ° C. for 10 minutes using a hot plate, and then heated at 300 ° C. for 30 minutes using an oven, and the heating temperature was raised to 400 ° C. (10 ° C./minute, and further heated at 400 ° C. for 30 minutes). After a minute, a peeling layer having a thickness of about 0.1 μm was formed on the glass substrate to obtain a glass substrate with a peeling layer. However, the substrate with the film was not taken out of the oven between heating, but was heated in the oven. [0097] Using a bar coater (gap: 250 μm), the composition F1 for resin substrate formation was applied on the release layer (resin film) on the glass substrate obtained above. Then, a heating plate was used at 80 ° C. The obtained coating film was heated for 30 minutes, and then heated at 140 ° C. for 30 minutes using an oven, and the heating temperature was raised to 210 ° C. (2 ° C./minute, the same below), and then heated at 210 ° C. for 30 minutes, and the heating temperature was The temperature was raised to 300 ° C, followed by heating at 300 ° C for 30 minutes, and the heating temperature was increased to 400 ° C, followed by heating at 400 ° C for 60 minutes. A resin substrate having a thickness of about 20 μm was formed on the release layer to obtain a resin substrate with peeling. Glass substrate Between heating, the substrate with the film is not taken out from the oven, but is heated in the oven. [Example 2-2] Instead of using the composition F2 for resin substrate formation, Example 2-1 was used. Except for the resin substrate forming composition F1, a peeling layer and a resin substrate were produced in the same manner as in Example 2-1, and a glass substrate with a peeling layer and a glass substrate with a resin substrate and a peeling layer were obtained. [Example 2-3] The composition L2 obtained in Example 1-2 was used in place of the composition L1 for release layer obtained in Example 1-2, except that the composition L1 obtained in Example 1-1 was used. -1 was used to prepare a release layer and a resin substrate to obtain a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer. [0100] [Example 2-4] Composition for forming a release layer As the composition, the release layer-forming composition L2 obtained in Example 1-2 was used, and as the resin substrate-forming composition, the resin substrate-forming composition F2 used in Example 2-2 was used. 2-1 the same method to make the release layer Resin substrate to obtain a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer. [Example 2-5] As a composition for forming a release layer, Example 1-1 was used. The composition L1 for forming a release layer was formed using the composition F4 for forming a resin substrate as a composition for forming a resin substrate, and a release layer and a resin substrate were produced in the same manner as in Example 2-1 to obtain peeling. [0102] [Example 2-6] As the composition for forming a release layer, the composition for forming a release layer L1 obtained in Example 1-1 was used. As the resin substrate forming composition system, a resin substrate forming composition F5 was used, and a release layer and a resin substrate were produced in the same manner as in Example 2-1, and a glass substrate with a release layer and a glass substrate with a release layer were obtained. Resin substrate • Glass substrate with release layer. [Example 2-7] As the composition for forming a release layer, the composition for forming a release layer L2 obtained in Example 1-2 was used, and as the composition for forming a resin substrate, a composition for forming a resin substrate was used. F5, and a peeling layer and a resin substrate were produced in the same manner as in Example 2-1, and a glass substrate with a peeling layer and a glass substrate with a resin substrate and a peeling layer were obtained. [Example 2-8] The release layer-forming composition L1 obtained in Example 1-1 was used to form a release layer in the same manner as in Example 2-1 to obtain a release layer-attached Glass base board. Immediately thereafter, the composition F6 for resin substrate formation was applied on the release layer (resin film) on the glass substrate using a spin coater (condition: about 15 seconds at 200 rpm). The obtained coating film was heated at 80 ° C. for 2 minutes using a hot plate, and then heated at 230 ° C. for 30 minutes using a hot plate to form a resin substrate having a thickness of about 3 μm on the release layer to obtain a resin substrate with a release layer. Glass base board. Then, as a result of measuring the light transmittance using an ultraviolet visible spectrophotometer (UV-2600, manufactured by Shimadzu Corporation), the resin substrate showed a transmittance of 80% or more at 400 nm. [Example 2-9] Except that the composition for forming a release layer L2 obtained in Example 1-2 was used instead of the composition for forming a release layer L1 obtained in Example 1-1, the same procedure as in Example was used. 2-8 The same method was used to produce a release layer and a resin substrate, and a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer were obtained. [Example 2-10] Using the composition for forming a release layer L1 obtained in Example 1-1, a release layer was formed in the same manner as in Example 2-1 to obtain a glass with a release layer. Substrate. Immediately thereafter, the composition F7 for resin substrate formation was applied on the release layer (resin film) on the glass substrate using a spin coater (condition: about 15 seconds at 200 rpm). The obtained coating film was heated at 80 ° C. for 2 minutes using a hot plate, and then heated at 230 ° C. for 30 minutes using a hot plate to form a resin substrate having a thickness of about 3 μm on the release layer to obtain a resin substrate with a release layer. Glass base board. Then, as a result of measuring the light transmittance using an ultraviolet visible spectrophotometer (UV-2600, manufactured by Shimadzu Corporation), the resin substrate showed a transmittance of 80% or more at 400 nm. [Example 2-11] Except that the composition for forming a release layer L2 obtained in Example 1-2 was used instead of the composition for forming a release layer L1 obtained in Example 1-1, the same procedure as in Example was used. 2-10 The same method was used to produce a release layer and a resin substrate, and a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer were obtained. [Comparative Examples 2-1 to 2-4] Instead of using the composition for forming a release layer obtained in Comparative Examples 1-1 to 1-2, the composition for forming a release layer obtained in Example 1-1 was used. Other than that, a peeling layer and a resin substrate were produced by the same method as the above-mentioned example, and a glass substrate with a peeling layer and a glass substrate with a resin substrate and a peeling layer were obtained. The combination of the release layer and the resin substrate is as shown in Table 1. [Example 2-12] Using a spin coater (condition: about 30 seconds at a number of rotations of 3,000 rpm), the composition L3 for forming a release layer obtained in Example 1-3 was applied to glass. 100mm × 100mm glass substrate (the same applies hereinafter) on the substrate. Then, the obtained coating film was heated at 80 ° C. for 10 minutes using a hot plate, and then heated at 300 ° C. for 30 minutes using an oven, and the heating temperature was raised to 400 ° C. (10 ° C./minute, and further heated at 400 ° C. for 30 minutes). After a minute, a peeling layer having a thickness of about 0.1 μm was formed on the glass substrate to obtain a glass substrate with a peeling layer. However, the substrate with the film was not taken out of the oven between heating, but was heated in the oven. [0110] Using a spin coater (condition: about 10 seconds at 800 rpm), the composition F3 for resin substrate formation was applied on the release layer (resin film) on the glass substrate obtained as described above. Then, The obtained coating film was heated at 80 ° C. for 30 minutes using a hot plate, and then heated at 230 ° C. for 30 minutes using an oven to form an acrylic substrate having a thickness of about 3 μm on the release layer. The temperature was not taken out from the oven The substrate with the film is heated in an oven. [0111] [Example 2-13] A composition F4 for resin substrate formation was used instead of the composition F3 for resin substrate formation used in Examples 2-12. To match with Example 2-1 2 The same method was used to produce a release layer and a resin substrate to obtain a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer. [0112] [Example 2-14] A composition for forming a resin substrate was used. The object F5 was used in place of the resin substrate forming composition F3 used in Example 2-12, and a release layer and a resin substrate were produced in the same manner as in Example 2-12 to obtain a glass substrate with a release layer and Glass substrate with resin substrate and release layer [0113] [Example 2-15] Instead of using the release layer formation composition L4 obtained in Example 1-4, the release layer formation obtained in Example 1-3 was used. Except for the composition L3, a release layer and a resin substrate were produced in the same manner as in Example 2-12, and a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer were obtained. [0114] [Implementation Example 2-16] The composition for forming a release layer was formed using the composition for forming a release layer L4 obtained in Example 1-4, and the composition for forming a resin substrate was formed using the resin substrate used in Example 2-14. With Composition F 5. In the same manner as in Example 2-12, a peeling layer and a resin substrate were prepared to obtain a glass substrate with a peeling layer and a glass substrate with a resin substrate and a peeling layer. [0115] [Example 2- 17] Using the composition for forming a release layer L3 obtained in Example 1-3, a release layer was formed in the same manner as in Example 2-12 to obtain a glass substrate with a release layer. Immediately thereafter, spin coating was used. A cloth spreader (condition: about 15 seconds at a number of rotations of 200 rpm) applied the composition F6 for resin substrate formation on the release layer (resin film) on the glass substrate. The obtained coating film was heated at 80 ° C. for 2 minutes using a hot plate, and then heated at 230 ° C. for 30 minutes using a hot plate to form a resin substrate having a thickness of about 3 μm on the release layer to obtain a resin substrate with a release layer. Glass base board. Then, as a result of measuring the light transmittance using an ultraviolet visible spectrophotometer (UV-2600, manufactured by Shimadzu Corporation), the resin substrate showed a transmittance of 80% or more at 400 nm. [Example 2-18] Except that the composition for forming a release layer L4 obtained in Example 1-4 was used instead of the composition for forming a release layer L3 obtained in Example 1-3, the same procedure as in Example was used. 2-17 The same method was used to produce a release layer and a resin substrate, and a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer were obtained. [Example 2-19] Using the composition for forming a release layer L3 obtained in Example 1-3, a release layer was formed in the same manner as in Example 2-12 to obtain a glass with a release layer. Substrate. Immediately thereafter, the composition F7 for resin substrate formation was applied on the release layer (resin film) on the glass substrate using a spin coater (condition: about 15 seconds at 200 rpm). The obtained coating film was heated at 80 ° C. for 2 minutes using a hot plate, and then heated at 230 ° C. for 30 minutes using a hot plate to form a resin substrate having a thickness of about 3 μm on the release layer to obtain a resin substrate with a release layer. Glass base board. Then, as a result of measuring the light transmittance using an ultraviolet visible spectrophotometer (UV-2600, manufactured by Shimadzu Corporation), the resin substrate showed a transmittance of 80% or more at 400 nm. [Example 2-20] Except that the composition for forming a release layer L4 obtained in Example 1-4 was used instead of the composition for forming a release layer L3 obtained in Example 1-3, the same procedure as in Example was used. 2-19 The same method was used to produce a release layer and a resin substrate, and a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer were obtained. [Comparative Example 2-5] Except that the composition HL1 for forming a release layer obtained in Comparative Example 1-1 was used in place of the composition L3 for forming a release layer obtained in Example 1-3, it was the same as the example. 2-12 The same method was used to produce a release layer and a resin substrate, and a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer were obtained. The combination of the release layer and the resin substrate is shown in Table 2. [Comparative Example 2-6] As the composition for forming a release layer, the composition HL2 for forming a release layer obtained in Comparative Example 1-2 was used, and as the composition for forming a resin substrate, the composition of Example 2-13 was used. The resin substrate forming composition F4 was used to prepare a release layer and a resin substrate in the same manner as in Example 2-12, and a glass substrate with a release layer and a glass substrate with a resin substrate and a release layer were obtained. [7] Evaluation of the solvent resistance of the release layer NMP and PGME were added dropwise to the obtained Examples 2-1 to 2-20 and Comparative Examples 2-1 to 2-6 using a pipette at 0.1 ml. On a release layer of a glass substrate with a release layer. After 1 minute, the release layer was washed with pure water, and the state of the release layer in which the solvent portion was dropped was visually observed to evaluate the solvent resistance of the release layer. The determination criteria are as follows. The results are shown in Tables 1 and 2. <Criterion> ○: No traces of liquid droplets were found, and no dissolution was observed. (Triangle | delta): Although the trace of a droplet was found, the residual film was found. ×: Dissolved. When the release layer is not dissolved in the dropped solvent, it means that when the resin substrate is formed on the release layer, the organic solvent contained in the resin substrate forming composition is not dissolved, and the resin substrate is not damaged from the glass substrate The meaning of peeling. [8] Evaluation of Peelability The glass substrate with a resin substrate and a release layer obtained in the above Examples 2-1 to 2-20 and Comparative Examples 2-1 to 2-6 was subjected to the following method To confirm the peelability between the peeling layer and the glass substrate. The following tests were performed on the same glass substrate. [0123] <Evaluation of Peelability of Release Layer and Glass Substrate> The release layers on the glass substrate with a release layer obtained in Examples 2-1 to 2-20 and Comparative Examples 2-1 to 2-6 were cross-cut. (1 mm interval in vertical and horizontal directions, the same applies hereinafter), and block cutting of 100 grids was performed. That is, by this cross cutting, 100 1 mm square grids were formed. Then, the adhesive tape was affixed to the cut portion of the 100 grid, and the tape was removed to evaluate the degree of peeling based on the following criteria (5B ~ 0B, B, A, AA). Furthermore, the peeling force evaluation test was performed using the glass substrate with a resin substrate and a peeling layer produced in Examples 2-5 to 2-20 among all the peeled substrates. The test method uses a blade to cut into the back surface of the resin substrate in a penetrating manner to make the resin substrate of the glass substrate with the resin substrate and the release layer into a rectangle having a width of 25 mm × 50 mm to form a strip. Furthermore, after attaching a Nichiban CT-24 tape to the produced strip, an Autograph AG-500N (manufactured by Shimadzu Corporation) was used to peel the substrate at 90 degrees, that is, in a vertical direction. The peeling force was measured, and 100% peeling (all peeling) was performed, and the peeling force was less than 0.1N / 25mm, and it was set to AAA. The above results are shown in Tables 1 and 2. <Judgment criteria> 5B: 0% peeling (no peeling) 4B: Less than 5% peeling 3B: 5 to less than 15% peeling 2B: 15 to less than 35% peeling 1B: 35 to less than 65% Peel 0B: 65% to less than 80% peel B: 80% to less than 95% peel A: 95% to less than 100% peel AA: 100% peel (all peel) AAA: 100% peel and peel The force is less than 0.1N / 25mm. [0124] <Evaluation of Peelability of Peeling Layer and Resin Substrate> For the resin substrate with resin obtained in Examples 2-1 to 2-20 and Comparative Examples 2-1 to 2-6 • The glass substrate of the release layer was evaluated for peelability according to the same procedure as the peelability evaluation described above. The results are shown in Tables 1 and 2. [0125] [0126] [0127] As shown in Tables 1 and 2, it was confirmed that the peeling layers of Examples 2-1 to 2-20 were excellent in adhesion to the glass substrate and were easily peeled from the resin film. It was also confirmed from the results of the solubility test that it was not dissolved in the organic solvent contained in the composition for forming a resin substrate. On the other hand, it was confirmed that although the peeling layers of Comparative Examples 2-1 to 2-6 had excellent adhesion to the glass substrate, they had poor peelability from the resin substrate.