TW201812799A - Method for manufacturing anisotropically conductive film, anisotropically conductive film, and connective structure - Google Patents
Method for manufacturing anisotropically conductive film, anisotropically conductive film, and connective structure Download PDFInfo
- Publication number
- TW201812799A TW201812799A TW106140194A TW106140194A TW201812799A TW 201812799 A TW201812799 A TW 201812799A TW 106140194 A TW106140194 A TW 106140194A TW 106140194 A TW106140194 A TW 106140194A TW 201812799 A TW201812799 A TW 201812799A
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- Prior art keywords
- conductive particles
- sheet
- film
- resin
- particles
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract description 41
- 238000000034 method Methods 0.000 title abstract description 33
- 239000002245 particle Substances 0.000 claims abstract description 491
- 229920005989 resin Polymers 0.000 claims abstract description 250
- 239000011347 resin Substances 0.000 claims abstract description 250
- 230000014759 maintenance of location Effects 0.000 abstract 1
- 239000010408 film Substances 0.000 description 270
- 239000010410 layer Substances 0.000 description 112
- 239000003822 epoxy resin Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 17
- 229920000647 polyepoxide Polymers 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- -1 polypropylene Polymers 0.000 description 14
- 239000000758 substrate Substances 0.000 description 13
- 239000011295 pitch Substances 0.000 description 12
- 229920001187 thermosetting polymer Polymers 0.000 description 12
- 238000003825 pressing Methods 0.000 description 10
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- 239000004840 adhesive resin Substances 0.000 description 9
- 229920006223 adhesive resin Polymers 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 8
- 239000004743 Polypropylene Substances 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 230000005611 electricity Effects 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- 229920001155 polypropylene Polymers 0.000 description 6
- 230000007423 decrease Effects 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000001568 sexual effect Effects 0.000 description 5
- 239000006087 Silane Coupling Agent Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000004849 latent hardener Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 239000002313 adhesive film Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 239000013034 phenoxy resin Substances 0.000 description 3
- 229920006287 phenoxy resin Polymers 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 239000011342 resin composition Substances 0.000 description 3
- 239000011163 secondary particle Substances 0.000 description 3
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- KUDUQBURMYMBIJ-UHFFFAOYSA-N 2-prop-2-enoyloxyethyl prop-2-enoate Chemical compound C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- 229920001893 acrylonitrile styrene Polymers 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 238000003491 array Methods 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000007771 core particle Substances 0.000 description 2
- 238000001723 curing Methods 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 2
- 238000005304 joining Methods 0.000 description 2
- 238000010030 laminating Methods 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000005026 oriented polypropylene Substances 0.000 description 2
- 239000004848 polyfunctional curative Substances 0.000 description 2
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 2
- 239000004810 polytetrafluoroethylene Substances 0.000 description 2
- SCUZVMOVTVSBLE-UHFFFAOYSA-N prop-2-enenitrile;styrene Chemical compound C=CC#N.C=CC1=CC=CC=C1 SCUZVMOVTVSBLE-UHFFFAOYSA-N 0.000 description 2
- KCTAWXVAICEBSD-UHFFFAOYSA-N prop-2-enoyloxy prop-2-eneperoxoate Chemical compound C=CC(=O)OOOC(=O)C=C KCTAWXVAICEBSD-UHFFFAOYSA-N 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- YNOHHTBATWDGKJ-UHFFFAOYSA-N 1,3-bis(prop-1-enoxy)propan-2-ol Chemical compound C(=CC)OCC(O)COC=CC YNOHHTBATWDGKJ-UHFFFAOYSA-N 0.000 description 1
- YEEFOSNIHVZRPZ-UHFFFAOYSA-N 1-(2-prop-1-enoxyethoxy)-4-[2-[4-(2-prop-1-enoxyethoxy)phenyl]propan-2-yl]benzene Chemical compound C(=CC)OCCOC1=CC=C(C=C1)C(C)(C)C1=CC=C(C=C1)OCCOC=CC YEEFOSNIHVZRPZ-UHFFFAOYSA-N 0.000 description 1
- KJCVRFUGPWSIIH-UHFFFAOYSA-N 1-naphthol Chemical compound C1=CC=C2C(O)=CC=CC2=C1 KJCVRFUGPWSIIH-UHFFFAOYSA-N 0.000 description 1
- HECLRDQVFMWTQS-RGOKHQFPSA-N 1755-01-7 Chemical compound C1[C@H]2[C@@H]3CC=C[C@@H]3[C@@H]1C=C2 HECLRDQVFMWTQS-RGOKHQFPSA-N 0.000 description 1
- CQOZJDNCADWEKH-UHFFFAOYSA-N 2-[3,3-bis(2-hydroxyphenyl)propyl]phenol Chemical compound OC1=CC=CC=C1CCC(C=1C(=CC=CC=1)O)C1=CC=CC=C1O CQOZJDNCADWEKH-UHFFFAOYSA-N 0.000 description 1
- CFVWNXQPGQOHRJ-UHFFFAOYSA-N 2-methylpropyl prop-2-enoate Chemical compound CC(C)COC(=O)C=C CFVWNXQPGQOHRJ-UHFFFAOYSA-N 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- RWSOTUBLDIXVET-UHFFFAOYSA-N Dihydrogen sulfide Chemical class S RWSOTUBLDIXVET-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229920000219 Ethylene vinyl alcohol Polymers 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- RIUQHCOQTXZANT-UHFFFAOYSA-N OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCCCCO Chemical compound OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OC(=O)C=C.OCCCCO RIUQHCOQTXZANT-UHFFFAOYSA-N 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000004698 Polyethylene Substances 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 239000004372 Polyvinyl alcohol Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- 238000003848 UV Light-Curing Methods 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Chemical compound NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- 150000001450 anions Chemical class 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000004202 carbamide Substances 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 238000002788 crimping Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 125000004386 diacrylate group Chemical group 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 208000037265 diseases, disorders, signs and symptoms Diseases 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 208000018459 dissociative disease Diseases 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- UHESRSKEBRADOO-UHFFFAOYSA-N ethyl carbamate;prop-2-enoic acid Chemical compound OC(=O)C=C.CCOC(N)=O UHESRSKEBRADOO-UHFFFAOYSA-N 0.000 description 1
- 229920005648 ethylene methacrylic acid copolymer Polymers 0.000 description 1
- 229910001922 gold oxide Inorganic materials 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229920000831 ionic polymer Polymers 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004850 liquid epoxy resins (LERs) Substances 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 1
- LUCXVPAZUDVVBT-UHFFFAOYSA-N methyl-[3-(2-methylphenoxy)-3-phenylpropyl]azanium;chloride Chemical compound Cl.C=1C=CC=CC=1C(CCNC)OC1=CC=CC=C1C LUCXVPAZUDVVBT-UHFFFAOYSA-N 0.000 description 1
- 239000003094 microcapsule Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- YWAKXRMUMFPDSH-UHFFFAOYSA-N pentene Chemical compound CCCC=C YWAKXRMUMFPDSH-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 229920002239 polyacrylonitrile Polymers 0.000 description 1
- 229920000768 polyamine Chemical class 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920002451 polyvinyl alcohol Polymers 0.000 description 1
- LYBIZMNPXTXVMV-UHFFFAOYSA-N propan-2-yl prop-2-enoate Chemical compound CC(C)OC(=O)C=C LYBIZMNPXTXVMV-UHFFFAOYSA-N 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- QQONPFPTGQHPMA-UHFFFAOYSA-N propylene Natural products CC=C QQONPFPTGQHPMA-UHFFFAOYSA-N 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000003229 sclerosing agent Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- AAAQKTZKLRYKHR-UHFFFAOYSA-N triphenylmethane Chemical compound C1=CC=CC=C1C(C=1C=CC=CC=1)C1=CC=CC=C1 AAAQKTZKLRYKHR-UHFFFAOYSA-N 0.000 description 1
- KBMBVTRWEAAZEY-UHFFFAOYSA-N trisulfane Chemical compound SSS KBMBVTRWEAAZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B27/00—Layered products comprising a layer of synthetic resin
- B32B27/18—Layered products comprising a layer of synthetic resin characterised by the use of special additives
- B32B27/20—Layered products comprising a layer of synthetic resin characterised by the use of special additives using fillers, pigments, thixotroping agents
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/30—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by a layer formed with recesses or projections, e.g. hollows, grooves, protuberances, ribs
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
- B32B37/025—Transfer laminating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/16—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating
- B32B37/18—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only
- B32B37/182—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with all layers existing as coherent layers before laminating involving the assembly of discrete sheets or panels only one or more of the layers being plastic
- B32B37/185—Laminating sheets, panels or inserts between two discrete plastic layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/14—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers
- B32B37/24—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the properties of the layers with at least one layer not being coherent before laminating, e.g. made up from granular material sprinkled onto a substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
- H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
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- B32B2037/1253—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives curable adhesive
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
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- H01L2224/29001—Core members of the layer connector
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/29001—Core members of the layer connector
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- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
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Abstract
Description
本發明係關於一種異向性導電膜之製造方法、異向性導電膜、及連接結構體,尤其是關於一種導電性粒子之分散性、粒子捕捉性優異,即使於窄間距化之端子彼此中亦可維持導通可靠性的異向性導電膜之製造方法、異向性導電膜、及連接結構體。本申請案係基於2012年8月1日於日本提出申請之日本專利申請編號日本特願2012-171331、及2013年8月1日於日本提出申請之日本專利申請編號日本特願2013-160116、日本特願2013-160117、日本特願2013-160118而主張優先權者,將該等申請案作為參照而引用於本申請案中。 The present invention relates to a method for manufacturing an anisotropic conductive film, an anisotropic conductive film, and a connection structure, and more particularly to a conductive particle having excellent dispersibility and particle trapping properties, even in narrow-pitch terminals. A method for manufacturing an anisotropic conductive film, an anisotropic conductive film, and a connection structure that can also maintain conduction reliability. This application is based on Japanese Patent Application No. 2012-171331 filed in Japan on August 1, 2012, and Japanese Patent Application No. 2013-160116, filed in Japan on August 1, 2013. Those claiming priority in Japanese Patent Application No. 2013-160117 and Japanese Patent Application No. 2013-160118 are incorporated by reference in this application.
異向性導電膜(ACF,anisotropic conductive film)係將導電性粒子分散於作為接著劑而發揮功能之絕緣性黏合劑樹脂中而成者。通常之異向性導電膜係藉由將分散有導電性粒子之黏合劑樹脂組成物塗佈於基礎膜上而形成為片狀。於使用異向性導電膜時,例如將其夾入電子零件之凸塊與配線板之電極端子之間,藉由利用加熱推壓頭進行加熱及加壓而將導電性粒子壓碎於凸塊與電極端子中,於該狀態下黏合劑樹脂發生硬化,藉此實現電性、機械連接。於無凸塊之部分,導電性粒子於黏合劑樹脂中維持分散之狀態,而保持電氣絕緣之狀態,因此變得僅於有凸塊之部分實現電性導通。又,異向性導電膜之厚度係設定為電子零件之凸塊或配線板 之電極之高度以上,藉由加熱推壓頭之推壓而使剩餘之接著劑成分流延至電極周邊。 Anisotropic conductive film (ACF) is a product in which conductive particles are dispersed in an insulating adhesive resin that functions as an adhesive. A general anisotropic conductive film is formed into a sheet by applying a binder resin composition in which conductive particles are dispersed to a base film. When an anisotropic conductive film is used, for example, it is sandwiched between a bump of an electronic component and an electrode terminal of a wiring board, and the conductive particles are crushed to the bump by heating and pressing with a heating and pushing head. With the electrode terminal, the adhesive resin is hardened in this state, thereby achieving electrical and mechanical connection. In the portion without bumps, the conductive particles maintain a dispersed state in the adhesive resin while maintaining the state of electrical insulation, so that electrical conduction is achieved only in the portion with bumps. The thickness of the anisotropic conductive film is set to be equal to or higher than the height of the bump of the electronic component or the electrode of the wiring board, and the remaining adhesive component is cast to the periphery of the electrode by pressing by the heating and pressing head.
於異向性導電膜中,大多數情形為將導電性粒子之摻合量相對於接著劑成分之體積設為5~15體積%。其原因在於:若導電性粒子之摻合量未達5體積%,則存在凸塊-電極端子間之導電性粒子之量(一般將其稱為「粒子捕捉率」)變少,導通可靠性可能會降低,反之,若摻合量超過15體積%,則於鄰接之電極端子間導電性粒子以相連之狀態存在,可能會導致短路。 In the anisotropic conductive film, in most cases, the amount of the conductive particles is set to 5 to 15% by volume relative to the volume of the adhesive component. The reason is that if the blending amount of conductive particles is less than 5% by volume, the amount of conductive particles between bumps and electrode terminals (generally referred to as "particle capture ratio") will be reduced, and conduction reliability will be reduced. It may be reduced. On the other hand, if the blending amount exceeds 15% by volume, conductive particles are present in a connected state between adjacent electrode terminals, which may cause a short circuit.
但是,於分散有導電性粒子之異向性導電膜中,於僅將導電性粒子之摻合量最佳化時,於壓接時大部分之導電性粒子流失,而大量存在無助於導通之導電性粒子。又,因流失之導電性粒子於鄰接之電極端子間形成導電性粒子之粒子聚集體,而有短路之危險。此情況會產生如下問題:電極端子間之間距越狹窄化,危險性越高,而無法充分地應對高密度構裝化。 However, in an anisotropic conductive film in which conductive particles are dispersed, when only the blending amount of the conductive particles is optimized, most of the conductive particles are lost during crimping, and a large amount does not help the conduction. Conductive particles. In addition, the lost conductive particles form a particle aggregate of conductive particles between adjacent electrode terminals, which may cause a short circuit. In this case, there is a problem that the narrower the distance between the electrode terminals is, the higher the danger becomes, and it is impossible to sufficiently cope with the high-density structure.
根據此種狀況,業界嘗試使異向性導電膜中之導電性粒子均勻地分散於黏合劑樹脂層中,而非無規地分散(例如參照專利文獻1、專利文獻2)。 Under such circumstances, the industry has attempted to disperse the conductive particles in the anisotropic conductive film uniformly in the adhesive resin layer instead of randomly dispersing them (for example, refer to Patent Documents 1 and 2).
[專利文獻1]WO2005/054388 [Patent Document 1] WO2005 / 054388
[專利文獻2]日本特開2010-251337號公報 [Patent Document 2] Japanese Patent Laid-Open No. 2010-251337
專利文獻1中記載有一種異向性導電膜之製造方法,其係於可雙軸延伸之膜上設置黏著層而形成積層體,並密集填充導電性粒子後,使該附著有導電性粒子之膜以導電性粒子間隔成為平均粒徑之1~5倍且為20μm以下之方式進行雙軸延伸並保持,並將其轉黏於絕緣性接著片材。 Patent Document 1 describes a method for manufacturing an anisotropic conductive film. An adhesive layer is formed on a biaxially stretchable film to form a laminated body, and conductive particles are densely filled. The film is biaxially stretched and held so that the interval between the conductive particles becomes 1 to 5 times the average particle diameter and 20 μm or less, and the film is transferred to an insulating adhesive sheet.
又,專利文獻2中記載有根據連接對象物之圖案而使導電性粒子不均分佈之異向性導電膜。 In addition, Patent Document 2 describes an anisotropic conductive film in which conductive particles are unevenly distributed in accordance with a pattern of a connection target.
但是,於專利文獻1所記載之發明中,有於雙軸延伸前之步驟中難以密集填充導電性粒子,而容易形成未填充粒子之空疏部分之缺點。若於此狀態下進行雙軸延伸,則會形成不存在導電性粒子之較大空間,有電子零件之凸塊與配線板之電極端子之間的粒子捕捉性降低,而引起導通不良之虞。又,難以利用雙軸使其精度良好且均勻地延伸。 However, the invention described in Patent Document 1 has the disadvantages that it is difficult to densely fill conductive particles in the step before biaxial stretching, and it is easy to form vacant portions of unfilled particles. If biaxial extension is performed in this state, a large space without conductive particles will be formed, and particle trapping between the bumps of the electronic parts and the electrode terminals of the wiring board may be reduced, which may cause poor conduction. In addition, it is difficult to use biaxial to make it extend accurately and uniformly.
於專利文獻2所記載之發明中,由於預先根據電極圖案使導電性粒子不均分佈,故而有於將異向性導電膜貼附於連接對象物時需要對準作業,於連接於窄間距化之電極端子時步驟變得繁雜之虞。又,必須根據連接對象物之電極圖案而改變導電性粒子之不均分佈圖案,不適於量產化。 In the invention described in Patent Document 2, since the conductive particles are unevenly distributed according to the electrode pattern in advance, alignment work is required when attaching an anisotropic conductive film to a connection object, and narrowing of the connection is required. When the electrode terminal is used, the steps may become complicated. In addition, it is necessary to change the uneven distribution pattern of the conductive particles according to the electrode pattern of the object to be connected, which is not suitable for mass production.
因此,本發明之目的在於提供一種導電性粒子之分散性、粒子捕捉性優異,即使於窄間距化之端子彼此中,亦可維持導通可靠性的異向性導電膜之製造方法、異向性導電膜、及連接結構體。 Therefore, an object of the present invention is to provide an anisotropic conductive film manufacturing method and anisotropy, which are excellent in dispersibility and particle trapping properties of conductive particles, and can maintain conduction reliability even among terminals with narrow pitches. A conductive film and a connection structure.
為了解決上述課題,本發明之一態樣係含有導電性粒子之異向性導電膜之製造方法,其係於沿同方向形成有連續數個溝槽之片材的上述溝槽埋入導電性粒子,並排列上述導電性粒子,於形成有上述溝槽之側的上述片材表面,層壓可延伸之基礎膜上形成有光或熱硬化性樹脂層之第1樹脂膜的上述樹脂層,使上述導電性粒子轉黏於上述第1樹脂膜之上述樹脂層,將在上述樹脂層轉黏有上述導電性粒子的上述第1樹脂膜於除了與上述導電性粒子之排列方向正交的方向以外之方向上進行單軸延伸,進而於配置有上述導電性粒子之上述第1樹脂膜的上述樹脂層,層壓基礎膜上形成有光或熱硬化性樹脂層之第2樹脂膜。 In order to solve the above-mentioned problem, one aspect of the present invention is a method for manufacturing an anisotropic conductive film containing conductive particles, which is embedded in the above-mentioned grooves with a plurality of grooves formed in the same direction. Particles, and the conductive particles are arranged, and the resin layer of the first resin film having a light or thermosetting resin layer formed on the stretchable base film is laminated on the surface of the sheet on the side where the groove is formed, The conductive particles are transferred to the resin layer of the first resin film, and the first resin film having the conductive particles is transferred to the resin layer except for a direction orthogonal to the arrangement direction of the conductive particles. It is uniaxially stretched in other directions, and the second resin film of the light or thermosetting resin layer is formed on the above-mentioned resin layer of the first resin film on which the conductive particles are arranged, and the base film is laminated.
又,本發明之另一態樣係至少由2層構成所形成之異向導電 性膜,其具備:構成一層之第1樹脂層,層壓於上述第1樹脂層上之第2樹脂層,及於上述第1樹脂層與上述第2樹脂層中至少與上述第1樹脂層接觸之數個導電性粒子;對於上述導電性粒子,於上述第1樹脂層中規則地排列形成於第1方向上之粒子列被規則地並列複數列設置於與上述第1方向不同之第2方向上,對於上述第1樹脂層,上述第1方向上之上述導電性粒子間的部位形成為比上述第2方向上之上述導電性粒子間的部位薄。 Furthermore, another aspect of the present invention is an anisotropic conductive film formed of at least two layers, which includes a first resin layer constituting one layer, and a second resin layer laminated on the first resin layer, And a plurality of conductive particles that are in contact with at least the first resin layer among the first resin layer and the second resin layer; the conductive particles are regularly arranged in the first resin layer and formed in a first direction; The above-mentioned particle rows are regularly arranged in parallel in a plurality of rows in a second direction different from the first direction. For the first resin layer, the positions between the conductive particles in the first direction are formed more than the second direction. The portion between the conductive particles in the direction is thin.
進而,本發明之又一態樣係一種連接結構體,係將上述異向導電性膜用於連接電子零件而成。 Furthermore, another aspect of the present invention is a connection structure formed by using the above-mentioned anisotropic conductive film for connecting electronic parts.
根據本發明之一態樣,由於預先根據片材之溝槽圖案而排列導電性粒子,故而藉由使轉黏有其等之第1樹脂膜單軸延伸,可使導電性粒子均勻地分散。因此,異向性導電膜中所含有之導電性粒子只要為使之均勻地分散於膜之整個面上所需最小限之量即可,無需過量含有。又,異向性導電膜亦無引起由剩餘之導電性粒子所致之端子間短路之虞。又,由於將異向性導電膜之導電性粒子均勻地分散,故而對於窄間距化之電極端子亦可確實地實現導通。 According to one aspect of the present invention, since the conductive particles are arranged in accordance with the groove pattern of the sheet in advance, the conductive particles can be uniformly dispersed by uniaxially extending the first resin film to which the adhesive is transferred. Therefore, the conductive particles contained in the anisotropic conductive film need only be in a minimum amount required to uniformly disperse the entire surface of the film, and do not need to be contained in excess. In addition, the anisotropic conductive film does not cause a short circuit between the terminals caused by the remaining conductive particles. In addition, since the conductive particles of the anisotropic conductive film are uniformly dispersed, it is possible to reliably achieve conduction even for electrode terminals with a narrow pitch.
又,根據本發明之其他態樣,於對應窄間距化之異向性導電膜中,可確實地進行均勻地分散之導電性粒子之位置控制,因此可確實地實現窄間距化之端子彼此之導通。 In addition, according to another aspect of the present invention, in the anisotropic conductive film corresponding to the narrow pitch, the position control of the uniformly dispersed conductive particles can be surely performed, so that the narrow pitch terminals can be reliably realized. Continuity.
進而,根據本發明之又一態樣,可確保連接結構體之基板與電子零件之良好之連接性,而提高持續長時間之連接可靠性。 Furthermore, according to still another aspect of the present invention, it is possible to ensure good connectivity between the substrate connecting the structure and the electronic parts, and to improve connection reliability for a long period of time.
1、101、201‧‧‧異向性導電膜 1.101, 201‧‧‧Anisotropic conductive film
2、102、202‧‧‧片材 2, 102, 202‧‧‧ sheet
3、103、203‧‧‧導電性粒子 3, 103, 203‧‧‧ conductive particles
3a、103a、203a‧‧‧粒子列 3a, 103a, 203a‧‧‧ particle column
4、104、204‧‧‧第1樹脂膜 4, 104, 204‧‧‧ the first resin film
5、105、205‧‧‧第1樹脂層 5, 105, 205‧‧‧The first resin layer
5a、5b‧‧‧部位 5a, 5b‧‧‧
5c、5d‧‧‧懸崖部 5c, 5d‧‧‧ Cliff
6‧‧‧基礎膜 6‧‧‧ base film
7‧‧‧第2樹脂膜 7‧‧‧ 2nd resin film
8‧‧‧第2樹脂層 8‧‧‧ 2nd resin layer
9‧‧‧基礎膜 9‧‧‧ base film
10‧‧‧溝槽 10‧‧‧ Trench
12、212‧‧‧刮板 12,212‧‧‧Scraper
13‧‧‧傾斜面 13‧‧‧ inclined surface
14、114、214‧‧‧凸部 14, 114, 214‧‧‧ convex
15、115、215‧‧‧凹部 15, 115, 215‧‧‧ Recess
16‧‧‧間隙 16‧‧‧ Clearance
50‧‧‧連接結構體 50‧‧‧ connection structure
52‧‧‧電子零件 52‧‧‧Electronic parts
54‧‧‧基板 54‧‧‧ substrate
56‧‧‧凸塊 56‧‧‧ bump
58‧‧‧電極 58‧‧‧electrode
102a‧‧‧間隙部 102a‧‧‧Gap section
112‧‧‧導引體 112‧‧‧Guide
112a‧‧‧接觸面 112a‧‧‧contact surface
112b‧‧‧突起部 112b‧‧‧ protrusion
112b1‧‧‧基端部 112b1‧‧‧Base end
112b2‧‧‧前端部 112b2‧‧‧Front end
112b3‧‧‧斜面部 112b3‧‧‧ oblique face
112c‧‧‧側壁部 112c‧‧‧ sidewall
112d‧‧‧間隙部 112d‧‧‧Gap section
112d1‧‧‧基端部 112d1‧‧‧Base end
112d2‧‧‧前端部 112d2‧‧‧ front
220‧‧‧電極 220‧‧‧ electrode
圖1A及B係表示於片材之溝槽填充並排列導電性粒子之一例的側視圖。 1A and 1B are side views showing an example of filling and arranging conductive particles in a groove of a sheet.
圖2A至D係表示應用有本發明之異向性導電膜之製造步驟的剖面圖。 2A to 2D are sectional views showing manufacturing steps of the anisotropic conductive film to which the present invention is applied.
圖3A至D係表示片材之各種溝槽圖案的立體圖。 3A to 3D are perspective views showing various groove patterns of the sheet.
圖4A至J係表示片材之各種溝槽形狀的剖面圖。 4A to J are sectional views showing various groove shapes of the sheet.
圖5係表示第1樹脂膜之延伸步驟的俯視圖。 FIG. 5 is a plan view showing a stretching step of the first resin film.
圖6係表示第1樹脂膜之延伸步驟的俯視圖。 FIG. 6 is a plan view showing a stretching step of the first resin film.
圖7係本發明之第1實施形態之異向性導電膜之部分立體圖。 FIG. 7 is a partial perspective view of the anisotropic conductive film according to the first embodiment of the present invention.
圖8A係圖7之P-P剖面圖,圖8B係圖7之Q-Q剖面圖。 8A is a cross-sectional view taken along the line P-P of FIG. 7, and FIG. 8B is a cross-sectional view taken along the line Q-Q of FIG. 7.
圖9係表示本發明之第1實施形態之異向性導電膜之導電性粒子之排列狀態的俯視圖。 FIG. 9 is a plan view showing an arrangement state of conductive particles in the anisotropic conductive film according to the first embodiment of the present invention.
圖10係表示應用本發明之第1實施形態之異向性導電膜之連接結構體之構成的概略剖面圖。 FIG. 10 is a schematic cross-sectional view showing the configuration of a connection structure to which the anisotropic conductive film according to the first embodiment of the present invention is applied.
圖11A及B係本發明之第2實施形態之異向性導電膜之製造方法中所使用之導引體的概略構成圖。 11A and 11B are schematic configuration diagrams of a guide used in a method for manufacturing an anisotropic conductive film according to a second embodiment of the present invention.
圖12係表示本發明之第2實施形態之異向性導電膜之製造方法中所使用之片材之概略構成的剖面圖。 12 is a cross-sectional view showing a schematic configuration of a sheet used in a method for manufacturing an anisotropic conductive film according to a second embodiment of the present invention.
圖13係說明本發明之第2實施形態之異向性導電膜之製造方法中於片材之溝槽埋入並排列導電性粒子之動作的剖面圖。 FIG. 13 is a cross-sectional view illustrating an operation of burying and arranging conductive particles in a groove of a sheet in a method for manufacturing an anisotropic conductive film according to a second embodiment of the present invention.
圖14係表示本發明之第2實施形態之異向性導電膜之製造方法中所製造之異向性導電膜之導電性粒子之排列狀態的俯視圖。 14 is a plan view showing an arrangement state of conductive particles of an anisotropic conductive film produced in a method of manufacturing an anisotropic conductive film according to a second embodiment of the present invention.
圖15A至C係表示本發明之第3實施形態之異向性導電膜之製造方法中所應用之導電性粒子之填充步驟的剖面圖。 15A to 15C are cross-sectional views showing a filling step of conductive particles used in a method for manufacturing an anisotropic conductive film according to a third embodiment of the present invention.
圖16係表示本發明之第3實施形態之異向性導電膜之製造方法中之填充步驟結束後之導電性粒子於片材中之排列狀態的俯視圖。 16 is a plan view showing an arrangement state of conductive particles in a sheet after a filling step in a method for manufacturing an anisotropic conductive film according to a third embodiment of the present invention is completed.
圖17係表示本發明之第3實施形態之異向性導電膜之製造方法中所製造之異向性導電膜之導電性粒子之排列狀態的俯視圖。 FIG. 17 is a plan view showing an arrangement state of conductive particles of an anisotropic conductive film produced in a method of manufacturing an anisotropic conductive film according to a third embodiment of the present invention.
以下,對於應用有本發明之異向性導電膜之製造方法之較佳實施形態,一邊參照圖式一邊進行詳細說明。再者,本發明並不僅限定於以下之實施形態,當然可於不脫離本發明之要旨之範圍內進行各種變更。又,圖式係示意性者,有時各尺寸之比率等與實際不同。具體之尺寸等應當參考以下之說明而判斷。又,當然於圖式相互間亦包含相互之尺寸之關係或比率不同之部分。 Hereinafter, a preferred embodiment of the method for manufacturing an anisotropic conductive film to which the present invention is applied will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments, and various changes can be made without departing from the scope of the present invention. In addition, the drawings are schematic, and the ratios of dimensions and the like may be different from actual ones. Specific dimensions should be judged with reference to the following description. It is a matter of course that the drawings also include portions having different dimensional relationships or ratios.
(第1實施形態) (First Embodiment)
於應用有本發明之異向性導電膜1之製造方法的第1實施形態中,如圖1及圖2所示,包含如下步驟:(1)於沿同方向形成有連續之數個溝槽之片材2之上述溝槽埋入導電性粒子3,並排列導電性粒子3(圖1A、圖1B);(2)於形成有上述溝槽之側的片材2表面,層壓在可延伸之基礎膜6上形成有光或熱硬化性樹脂層5的第1樹脂膜4之樹脂層5(圖2A);(3)使導電性粒子3轉黏於第1樹脂膜4之樹脂層5(圖2B);(4)將在樹脂層5轉黏有導電性粒子3之第1樹脂膜4於除了與導電性粒子3之排列方向正交之方向以外的圖2C中箭頭A方向上進行單軸延伸(圖2C);(5)進而於配置有導電性粒子3之第1樹脂膜4之樹脂層5,層壓在基礎膜9上形成有光或熱硬化性樹脂層8之第2樹脂膜7(圖2D)。 In the first embodiment to which the manufacturing method of the anisotropic conductive film 1 of the present invention is applied, as shown in FIG. 1 and FIG. 2, the method includes the following steps: (1) A plurality of continuous trenches are formed in the same direction. The above-mentioned grooves of the sheet 2 are embedded with the conductive particles 3, and the conductive particles 3 are arranged (Fig. 1A, Fig. 1B); (2) The surface of the sheet 2 on the side where the grooves are formed is laminated on the surface of the sheet 2 The resin layer 5 (FIG. 2A) of the first resin film 4 having the light or thermosetting resin layer 5 formed on the extended base film 6 (3) The conductive particles 3 are transferred to the resin layer of the first resin film 4 5 (Fig. 2B); (4) The first resin film 4 having the conductive particles 3 transferred to the resin layer 5 is in the direction of arrow A in Fig. 2C except for the direction orthogonal to the arrangement direction of the conductive particles 3. Uniaxial stretching is performed (FIG. 2C); (5) The resin layer 5 of the first resin film 4 on which the conductive particles 3 are arranged is laminated on the base film 9 to form a light or thermosetting resin layer 8. 2 resin film 7 (Fig. 2D).
[片材] [Sheet]
如圖3所示,沿同方向形成有連續數個溝槽之片材2例如為形成有特定之溝槽10之樹脂片材,例如可藉由如下方法形成:藉由使顆粒物於熔融狀態下流入至形成有溝槽圖案之模具中,進行冷卻、凝固而轉印特定之溝槽10。或者,片材2可藉由如下方法形成:將形成有溝槽圖案之模具加熱至樹脂片材之軟化點以上之溫度,並將樹脂片材壓抵於該模具而進行轉印。 As shown in FIG. 3, the sheet 2 having a plurality of continuous grooves formed in the same direction is, for example, a resin sheet having a specific groove 10 formed, and can be formed, for example, by making particles in a molten state. It flows into the mold in which the groove pattern was formed, cools and solidifies, and transfers the specific groove 10 to it. Alternatively, the sheet 2 may be formed by heating a mold having a groove pattern formed thereon to a temperature above the softening point of the resin sheet, and pressing the resin sheet against the mold to perform transfer.
作為構成片材2之材料,可熱熔融並轉印形成有溝槽10之 圖案之模具之形狀的材料均可使用。又,片材2之材料較佳為具有耐溶劑性、耐熱性、脫模性。作為此種樹脂片材,例如可例示聚丙烯、聚乙烯、聚酯、PET、尼龍、離子聚合物、聚乙烯醇、聚碳酸酯、聚苯乙烯、聚丙烯腈、乙烯-乙酸乙烯酯共聚物、乙烯-乙烯醇共聚物、乙烯-甲基丙烯酸共聚物等熱塑性樹脂膜。或者可例示形成有所謂微細凹凸圖案之角柱片材。 As the material constituting the sheet 2, any material that can be thermally melted and transferred to the shape of a mold in which the pattern of the grooves 10 is formed can be used. The material of the sheet 2 preferably has solvent resistance, heat resistance, and release properties. Examples of such a resin sheet include polypropylene, polyethylene, polyester, PET, nylon, ionic polymers, polyvinyl alcohol, polycarbonate, polystyrene, polyacrylonitrile, and ethylene-vinyl acetate copolymers. , Ethylene-vinyl alcohol copolymer, ethylene-methacrylic acid copolymer and other thermoplastic resin films. Alternatively, a corner pillar sheet in which a so-called fine uneven pattern is formed is exemplified.
形成於片材2上之溝槽10之圖案如圖3所示,沿同方向連續之數個溝槽於與該溝槽之長度方向正交之方向上鄰接而形成。溝槽10如圖3A所示,可沿片材2之長度方向使之連續,如圖3B所示,亦可沿相對於片材2之長度方向傾斜之方向使之連續。又,溝槽10如圖3C所示,可沿片材2之長度方向使之蜿蜒,如圖3D所示,亦可沿片材2之長度方向使之連續成矩形波狀。除此以外,溝槽10可形成為鋸齒狀、格子狀等所有圖案。 The pattern of the grooves 10 formed on the sheet 2 is shown in FIG. 3, and a plurality of grooves continuous in the same direction are formed adjacent to each other in a direction orthogonal to the longitudinal direction of the grooves. As shown in FIG. 3A, the groove 10 may be continuous along the length direction of the sheet 2, as shown in FIG. 3B, or may be continuous along a direction inclined with respect to the length direction of the sheet 2. In addition, as shown in FIG. 3C, the groove 10 can be meandered along the length direction of the sheet 2, and as shown in FIG. 3D, it can also be continuously formed into a rectangular wave shape along the length direction of the sheet 2. In addition, the grooves 10 may be formed in all patterns such as a zigzag shape and a lattice shape.
又,溝槽10之形狀如圖4A~J所例示,可採用各種形狀。此時,對於溝槽10,考慮導電性粒子3之易填充性及所填充之導電性粒子3對第1樹脂膜4之易轉黏性而決定各尺寸。若溝槽10相對於導電性粒子3之粒徑過大,則溝槽10之導電性粒子之保持變難而變得填充不足,若溝槽10相對於導電性粒子3之粒徑過小,則導電性粒子3無法進入而變得填充不足,此外亦會嵌入溝槽10內而變得無法轉印至第1樹脂膜4。因此,例如將溝槽10形成為寬度W為導電性粒子3之粒徑之1倍~未達2.5倍,且深度D為導電性粒子3之粒徑之0.5~2倍。又,較佳為將溝槽10之寬度W設為導電性粒子3之粒徑之1倍~未達2倍,且將深度D設為導電性粒子3之粒徑之0.5~1.5倍。 The shape of the trench 10 is illustrated in FIGS. 4A to J, and various shapes can be adopted. At this time, each dimension of the trench 10 is determined in consideration of the easy-filling property of the conductive particles 3 and the easy-to-tackiness of the filled conductive particles 3 to the first resin film 4. If the particle diameter of the grooves 10 with respect to the conductive particles 3 is too large, it will be difficult to maintain the conductive particles of the grooves 10 and become insufficiently filled. If the particle diameter of the grooves 10 with respect to the conductive particles 3 is too small, it will be conductive. The sexual particles 3 cannot enter and become insufficiently filled, and also become embedded in the grooves 10 and cannot be transferred to the first resin film 4. Therefore, for example, the groove 10 is formed such that the width W is 1 to 2.5 times the particle diameter of the conductive particles 3 and the depth D is 0.5 to 2 times the particle diameter of the conductive particles 3. The width W of the trench 10 is preferably 1 to 2 times the particle diameter of the conductive particles 3, and the depth D is preferably 0.5 to 1.5 times the particle diameter of the conductive particles 3.
[導電性粒子] [Conductive particles]
作為導電性粒子3,可列舉異向性導電膜中所使用之公知之任何導電性粒子。作為導電性粒子3,例如可列舉鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、 銀、金等各種金屬或金屬合金之粒子,於金屬氧化物、碳、石墨、玻璃、陶瓷、塑膠等之粒子之表面塗佈金屬而成者,或於該等粒子之表面進而塗佈絕緣薄膜而成者等。於為在樹脂粒子之表面塗佈金屬而成者之情形時,作為樹脂粒子,例如可列舉環氧樹脂、酚樹脂、丙烯酸樹脂、丙烯腈-苯乙烯(AS)樹脂、苯胍樹脂、二乙烯基苯系樹脂、苯乙烯系樹脂等之粒子。 Examples of the conductive particles 3 include any known conductive particles used in an anisotropic conductive film. Examples of the conductive particles 3 include particles of various metals or metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, and gold, and metal oxides, carbon, graphite, glass, ceramics, Particles such as plastic are coated with metal, or particles are coated with an insulating film. When the metal particles are coated on the surface of the resin particles, examples of the resin particles include epoxy resin, phenol resin, acrylic resin, acrylonitrile-styrene (AS) resin, benzoguanidine resin, and diethylene glycol. Particles of benzene-based resin, styrene-based resin, etc.
此種導電性粒子3因為被填充於片材2之溝槽10中而沿溝槽10排列。例如,導電性粒子3如圖1A所示,藉由密接於片材2之表面的刮板12而被填充於溝槽10內。片材2配置於傾斜面13上,並且向圖1A中箭頭D所示之下方搬送。導電性粒子3藉由刮板12而被供於片材2之搬送方向上游側,隨著片材2之搬送而逐漸填充、排列於溝槽10內。 Such conductive particles 3 are arranged along the grooves 10 because they are filled in the grooves 10 of the sheet 2. For example, as shown in FIG. 1A, the conductive particles 3 are filled in the grooves 10 by a squeegee 12 that is in close contact with the surface of the sheet 2. The sheet 2 is arranged on the inclined surface 13 and is conveyed downward as shown by an arrow D in FIG. 1A. The conductive particles 3 are supplied to the upstream side in the conveyance direction of the sheet 2 by the squeegee 12, and are gradually filled and arranged in the groove 10 as the sheet 2 is conveyed.
再者,如圖1B所示,導電性粒子3亦可藉由向箭頭U所示之傾斜面13之上方搬送之片材2之刮板12而被供於搬送方向上游側,隨著片材2之搬送而填充、排列於溝槽10內。又,對於導電性粒子3,除了使用刮板12之方法以外,亦可將導電性粒子3撒在片材2之形成有溝槽10之面之後,使超音波振動、風力、靜電、自片材2之背面側之磁力等一個或數個外力發揮作用,而將其填充、排列於溝槽10中。進而,導電性粒子3可於潮濕狀態下進行填充、排列於溝槽10中之處理(濕式),或者亦可於乾燥狀態下進行處理(乾式)。 Furthermore, as shown in FIG. 1B, the conductive particles 3 can also be supplied to the upstream side in the conveying direction by the scraper 12 of the sheet 2 conveyed above the inclined surface 13 indicated by the arrow U, and as the sheet 2 is transported, filled and arranged in the trench 10. As for the conductive particles 3, in addition to the method using the squeegee 12, the conductive particles 3 may be scattered on the surface of the sheet 2 where the grooves 10 are formed, and then ultrasonic vibration, wind force, static electricity, and self-sheeting may be applied. One or several external forces, such as a magnetic force on the back side of the material 2, act to fill and arrange the grooves 10. Furthermore, the conductive particles 3 may be filled in a wet state and disposed in the grooves 10 (wet type), or may be processed in a dry state (dry type).
[第1樹脂膜/樹脂層/延伸性基礎膜] [First resin film / resin layer / stretchable base film]
層壓於「在溝槽10中填充、排列有導電性粒子3之片材2」的第1樹脂膜4係於可延伸之基礎膜6上形成有光或熱硬化性樹脂層5的熱硬化型或紫外線硬化型接著膜。第1樹脂膜4藉由層壓於片材2,轉黏以溝槽10之圖案排列之導電性粒子3,而構成異向性導電膜1。 The first resin film 4 laminated on the "sheet 2 in which the conductive particles 3 are filled and arranged in the trenches 10" is formed by thermosetting a light or thermosetting resin layer 5 on a stretchable base film 6. Type or UV-curable type adhesive film. The first resin film 4 is laminated on the sheet material 2, and the conductive particles 3 arranged in the pattern of the grooves 10 are transferred to the anisotropic conductive film 1.
第1樹脂膜4例如係藉由將含有膜形成樹脂、熱硬化性樹脂、潛伏性硬化劑、矽烷偶合劑等的通常之黏合劑樹脂(接著劑)塗佈於 基礎膜6上而形成樹脂層5,並將其成型為膜狀而成者。 The first resin film 4 is, for example, a resin layer formed by applying a general adhesive resin (adhesive) containing a film-forming resin, a thermosetting resin, a latent hardener, and a silane coupling agent to the base film 6. 5, and forming it into a film.
可延伸之基礎膜6例如係於PET(Poly Ethylene Terephthalate,聚對苯二甲酸乙二酯)、OPP(Oriented Polypropylene,延伸聚丙烯)、PMP(Poly-4-methlpentene-1,聚4-甲基戊烯-1)、PTFE(Polytetrafluoroethylene,聚四氟乙烯)等塗佈聚矽氧等剝離劑而成。 The extensible base film 6 is made of, for example, PET (Poly Ethylene Terephthalate), OPP (Oriented Polypropylene, extended polypropylene), PMP (Poly-4-methlpentene-1, poly 4-methyl A release agent such as pentene-1) and polytetrafluoroethylene (polytetrafluoroethylene) is coated with polysiloxane.
作為構成樹脂層5之膜形成樹脂,較佳為平均分子量為10000~80000左右之樹脂。作為膜形成樹脂,可列舉環氧樹脂、改質環氧樹脂、胺甲酸乙酯樹脂、苯氧基樹脂等各種樹脂。其中,就膜形成狀態、連接可靠性等觀點而言,尤佳為苯氧基樹脂。 The film-forming resin constituting the resin layer 5 is preferably a resin having an average molecular weight of about 10,000 to 80,000. Examples of the film-forming resin include various resins such as epoxy resin, modified epoxy resin, urethane resin, and phenoxy resin. Among these, a phenoxy resin is particularly preferable from the viewpoints of a film formation state and connection reliability.
作為熱硬化性樹脂並無特別限定,例如可列舉市售之環氧樹脂、丙烯酸樹脂等。 The thermosetting resin is not particularly limited, and examples thereof include commercially available epoxy resins and acrylic resins.
作為環氧樹脂並無特別限定,例如可列舉萘型環氧樹脂、聯苯型環氧樹脂、酚系酚醛清漆型環氧樹脂、雙酚型環氧樹脂、茋型環氧樹脂、三酚甲烷型環氧樹脂、酚芳烷基型環氧樹脂、萘酚型環氧樹脂、二環戊二烯型環氧樹脂、三苯甲烷型環氧樹脂等。該等可單獨使用,亦可組合使用2種以上。 The epoxy resin is not particularly limited, and examples thereof include a naphthalene-type epoxy resin, a biphenyl-type epoxy resin, a phenol-based novolac-type epoxy resin, a bisphenol-type epoxy resin, a fluorene-type epoxy resin, and triphenol methane. Epoxy resin, phenol aralkyl epoxy resin, naphthol epoxy resin, dicyclopentadiene epoxy resin, triphenylmethane epoxy resin, etc. These can be used alone or in combination of two or more.
作為丙烯酸樹脂並無特別限制,可根據目的而適當選擇丙烯酸化合物、液狀丙烯酸酯等。例如可列舉丙烯酸甲酯、丙烯酸乙酯、丙烯酸異丙酯、丙烯酸異丁酯、環氧丙烯酸酯、乙二醇二丙烯酸酯、二乙二醇二丙烯酸酯、三羥甲基丙烷三丙烯酸酯、二羥甲基三環癸烷二丙烯酸酯、1,4-丁二醇四丙烯酸酯、2-羥基-1,3-二丙烯醯氧基丙烷、2,2-雙[4-(丙烯醯氧基甲氧基)苯基]丙烷、2,2-雙[4-(丙烯醯氧基乙氧基)苯基]丙烷、二環戊烯基丙烯酸酯、丙烯酸三環癸酯、異氰尿酸三(丙烯醯氧基乙基)酯、丙烯酸胺甲酸乙酯、環氧丙烯酸酯等。再者,亦可使用將丙烯酸酯變為甲基丙烯酸酯者。該等可單獨使用1種,亦可併用2種以上。 The acrylic resin is not particularly limited, and an acrylic compound, a liquid acrylate, or the like can be appropriately selected depending on the purpose. Examples include methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, epoxy acrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, trimethylolpropane triacrylate, Dimethylol tricyclodecane diacrylate, 1,4-butanediol tetraacrylate, 2-hydroxy-1,3-dipropenyloxypropane, 2,2-bis [4- (propylene pentoxide Methoxy) phenyl] propane, 2,2-bis [4- (propenyloxyethoxy) phenyl] propane, dicyclopentenyl acrylate, tricyclodecyl acrylate, isocyanuric acid tri (Propyleneoxyethyl), urethane acrylate, epoxy acrylate, and the like. In addition, it is also possible to use a acrylate to a methacrylate. These may be used individually by 1 type, and may use 2 or more types together.
作為潛伏性硬化劑並無特別限定,例如可列舉加熱硬化型、UV硬化型等之各種硬化劑。潛伏性硬化劑於通常條件下不反應,藉由熱、光、加壓等根據用途選擇之各種引發條件而活性化,並開始反應。熱活性型潛伏性硬化劑之活性化方法有如下方法:藉由利用加熱所致之解離反應等而生成活性物質(陽離子或陰離子、自由基)之方法;於室溫附近穩定地分散於環氧樹脂中,於高溫下與環氧樹脂相溶、溶解,而開始硬化反應之方法;使分子篩封入型硬化劑於高溫下溶出而開始硬化反應之方法;利用微膠囊之溶出、硬化方法等。作為熱活性型潛伏性硬化劑,有咪唑系、醯肼系、三氟化硼-胺錯合物、鋶鹽、胺醯亞胺、聚胺鹽、雙氰胺等或該等之改質物,該等可單獨使用,亦可為2種以上之混合體。其中,較佳為微膠囊型咪唑系潛伏性硬化劑。 The latent curing agent is not particularly limited, and examples thereof include various curing agents such as a heat curing type and a UV curing type. The latent hardener does not react under normal conditions, is activated by various initiation conditions selected according to the application such as heat, light, and pressure, and starts to react. The activation method of the thermally active latent hardener is as follows: a method of generating an active material (cation, anion, radical) by using a dissociation reaction caused by heating, etc .; and stably dispersing it in an epoxy resin near room temperature. In resin, it is a method of dissolving and dissolving with an epoxy resin at a high temperature to start a hardening reaction; a method of dissolving a molecular sieve-encapsulated hardener at a high temperature to start a hardening reaction; and a method of dissolving and hardening microcapsules. As heat-active latent hardeners, there are imidazole-based, hydrazine-based, boron trifluoride-amine complexes, sulfonium salts, amine imines, polyamine salts, dicyandiamide, or the like, These can be used alone or as a mixture of two or more. Among these, a microcapsule-type imidazole-based latent sclerosing agent is preferred.
作為矽烷偶合劑並無特別限定,例如可列舉環氧系、胺系、巰基-硫化物系、醯脲系等。藉由添加矽烷偶合劑,會提高有機材料與無機材料之界面處之接著性。 The silane coupling agent is not particularly limited, and examples thereof include epoxy-based, amine-based, mercapto-sulfide-based, and urea-based. By adding a silane coupling agent, the adhesion at the interface between organic materials and inorganic materials can be improved.
再者,就使用之容易性、保存穩定性等觀點而言,第1樹脂膜4亦可設為於與樹脂層5之積層有基礎膜6之面相反之面側設置覆蓋膜之構成。又,第1樹脂膜4之形狀並無特別限定,但藉由設為可捲繞於捲取盤上之長條片材形狀,可僅切割特定之長度而使用。 Furthermore, from the viewpoints of ease of use, storage stability, and the like, the first resin film 4 may have a configuration in which a cover film is provided on the side opposite to the surface on which the base film 6 is laminated on the resin layer 5. The shape of the first resin film 4 is not particularly limited, but it can be used by cutting only a specific length by having a long sheet shape that can be wound on a take-up reel.
[第2樹脂膜] [Second resin film]
又,層壓於「轉黏有導電性粒子3之第1樹脂膜4」之第2樹脂膜7與第1樹脂膜4同樣地亦為於基礎膜9上形成有光或熱硬化性樹脂層8的熱硬化型或紫外線硬化型接著膜。第2樹脂膜7之樹脂層8可使用與第1樹脂膜4之樹脂層5相同者,基礎膜9可使用與第1樹脂膜4之基礎膜6相同者。第2樹脂膜7藉由層壓於轉黏有導電性粒子3之第1樹脂膜4,而與第1樹脂膜4一同構成異向性導電膜1。 In addition, the second resin film 7 laminated on the “first resin film 4 with the conductive particles 3 transferred thereto” has a light or thermosetting resin layer formed on the base film 9 in the same manner as the first resin film 4. 8 heat-curable or ultraviolet-curable adhesive film. The resin layer 8 of the second resin film 7 may be the same as the resin layer 5 of the first resin film 4, and the base film 9 may be the same as the base film 6 of the first resin film 4. The second resin film 7 is laminated on the first resin film 4 to which the conductive particles 3 are adhered to form an anisotropic conductive film 1 together with the first resin film 4.
對於此種異向性導電膜1,藉由在剝離基礎膜6、9後,例如將其夾入電子零件之凸塊與配線板之電極端子之間,並利用加熱推壓頭(未圖示)進行加熱及加壓,而使之流動化並將導電性粒子3於凸塊與電極端子之間壓碎,藉由加熱或紫外線照射,而使導電性粒子3於壓碎之狀態下硬化。藉此,異向性導電膜1將電子零件與配線板電性、機械地連接。 For such anisotropic conductive film 1, after the base films 6, 9 are peeled off, for example, it is sandwiched between the bumps of the electronic parts and the electrode terminals of the wiring board, and the pressing head (not shown) is heated. ) Is heated and pressurized to fluidize and crush the conductive particles 3 between the bumps and the electrode terminals, and the conductive particles 3 are hardened in a crushed state by heating or ultraviolet irradiation. Thereby, the anisotropic conductive film 1 electrically and mechanically connects the electronic component and the wiring board.
[異向性導電膜之製造方法] [Manufacturing method of anisotropic conductive film]
其次,對異向性導電膜1之製造步驟進行說明。 Next, the manufacturing steps of the anisotropic conductive film 1 will be described.
首先,於以特定之圖案形成有溝槽10之片材2的上述溝槽10中填充、排列導電性粒子3(參照圖1A、圖1B)。導電性粒子3於溝槽10中之填充、排列可使用如下方法:使用刮板之方法,或使超音波振動、風力、靜電、自片材2之背面側之磁力等一個或數個外力發揮作用之方法等。 First, conductive particles 3 are filled and arranged in the grooves 10 of the sheet 2 having the grooves 10 formed in a specific pattern (see FIGS. 1A and 1B). The method of filling and arranging the conductive particles 3 in the trenches 10 may be as follows: using a scraper method, or exerting one or more external forces such as ultrasonic vibration, wind, static electricity, and magnetic force from the back side of the sheet 2 Method of action, etc.
其次,於排列有導電性粒子3之側的片材2表面,層壓第1樹脂膜4之樹脂層5(參照圖2A)。層壓係藉由如下方式進行:將樹脂層5配置於片材2表面後,利用加熱推壓頭於低壓下進行推壓,並適當地於使黏合劑樹脂顯示黏性但不開始熱硬化之溫度下進行短時間之熱加壓。 Next, on the surface of the sheet 2 on the side where the conductive particles 3 are arranged, a resin layer 5 of a first resin film 4 is laminated (see FIG. 2A). Lamination is performed by placing the resin layer 5 on the surface of the sheet 2 and then pressing the resin layer 5 at a low pressure by using a heating and pressing head, and appropriately making the adhesive resin exhibit tackiness without starting to harden. Short-time heat pressurization is performed at the temperature.
藉由在層壓第1樹脂膜4並冷卻後,將片材2與第1樹脂膜4剝離,而使導電性粒子3轉黏於第1樹脂膜4(參照圖2B)。關於第1樹脂膜4,導電性粒子3以相對應於溝槽10之圖案的圖案而排列於樹脂層5之表面。 After the first resin film 4 is laminated and cooled, the sheet 2 and the first resin film 4 are peeled off, so that the conductive particles 3 are transferred to the first resin film 4 (see FIG. 2B). Regarding the first resin film 4, the conductive particles 3 are arranged on the surface of the resin layer 5 in a pattern corresponding to the pattern of the grooves 10.
其次,將第1樹脂膜4在除了與導電性粒子3之排列方向正交之方向以外的方向上進行單軸延伸(參照圖2C)。藉此,如圖5、圖6所示,使導電性粒子3分散。此處,自延伸方向中除去與導電性粒子3之排列方向正交之方向之原因在於:於該方向上,導電性粒子3已因對應於溝槽10之圖案排列而分離。並且,藉由將第1樹脂膜4於除該方向以外之方 向上進行單軸延伸,可使於排列方向上密接之導電性粒子3分離。 Next, the first resin film 4 is uniaxially stretched in a direction other than a direction orthogonal to the arrangement direction of the conductive particles 3 (see FIG. 2C). Thereby, as shown in FIG. 5 and FIG. 6, the conductive particles 3 are dispersed. Here, the reason that the direction orthogonal to the arrangement direction of the conductive particles 3 is removed from the extending direction is that in this direction, the conductive particles 3 have been separated due to the pattern arrangement corresponding to the grooves 10. Furthermore, the first resin film 4 is uniaxially stretched in a direction other than this direction, so that the conductive particles 3 which are in close contact in the arrangement direction can be separated.
因此,於圖5中,較佳為使其向同圖中箭頭A方向延伸,而不向箭頭Z方向延伸。又,於圖6中,較佳為使其向除同圖中箭頭Z方向以外之任一方向,例如向第1樹脂膜4之長度方向即同圖中箭頭A方向延伸。 Therefore, in FIG. 5, it is preferable to extend it in the direction of the arrow A in the same figure and not extend in the direction of the arrow Z. Further, in FIG. 6, it is preferable to extend it in any direction other than the direction of the arrow Z in the figure, for example, to extend in the length direction of the first resin film 4, that is, the direction of the arrow A in the figure.
第1樹脂膜4之延伸例如可藉由使用縮放方式之延伸機,於130℃之烘箱中於單軸方向上延伸200%而進行。又,藉由在第1樹脂膜4之長度方向上進行單軸延伸,可精度良好且容易地使之延伸。 The stretching of the first resin film 4 can be performed, for example, by stretching 200% in a uniaxial direction in an oven at 130 ° C. by using a stretching machine. In addition, by uniaxially stretching the first resin film 4 in the longitudinal direction, the first resin film 4 can be stretched with high accuracy and easily.
其次,於配置有導電性粒子3之第1樹脂膜4之樹脂層5,層壓第2樹脂膜7之樹脂層8(參照圖2D)。第2樹脂膜7之層壓係藉由如下方式進行:將樹脂層8配置於第1樹脂膜4之樹脂層5表面之後,利用加熱推壓頭於低壓下進行推壓,並適當地於使黏合劑樹脂顯示黏性但不開始熱硬化之溫度下,於短時間內進行熱加壓。 Next, the resin layer 8 of the second resin film 7 is laminated on the resin layer 5 of the first resin film 4 on which the conductive particles 3 are arranged (see FIG. 2D). The lamination of the second resin film 7 is performed by placing the resin layer 8 on the surface of the resin layer 5 of the first resin film 4 and then pressing the resin layer 8 at a low pressure with a heating and pressing head, and appropriately applying The binder resin is hot-pressed in a short period of time at a temperature at which the binder resin exhibits tackiness but does not start to heat harden.
由此,製造異向性導電膜1。根據該異向性導電膜1,由於預先根據片材2之溝槽10之圖案而排列導電性粒子3,故而藉由使轉黏有其等之第1樹脂膜4單軸延伸,可使導電性粒子3均勻地分散。因此,異向性導電膜1中所含有之導電性粒子3只要為使之均勻地分散於膜整個面上所需最小限之量即可,無需過量含有。又,異向性導電膜1亦無引起由剩餘之導電性粒子3所導致之端子間短路之虞。又,由於使異向性導電膜1之導電性粒子3均勻地分散,故而對於窄間距化之電極端子亦可確實地實現導通。 Thereby, the anisotropic conductive film 1 is manufactured. According to this anisotropic conductive film 1, since the conductive particles 3 are arranged in advance according to the pattern of the grooves 10 of the sheet 2, the first resin film 4 which has been transferred and adhered thereto can be uniaxially extended to conduct electricity. The sexual particles 3 are uniformly dispersed. Therefore, the conductive particles 3 contained in the anisotropic conductive film 1 need only be the minimum amount required to uniformly disperse them over the entire surface of the film, and do not need to be contained excessively. In addition, the anisotropic conductive film 1 does not cause a short circuit between terminals caused by the remaining conductive particles 3. In addition, since the conductive particles 3 of the anisotropic conductive film 1 are uniformly dispersed, it is possible to reliably achieve conduction even for electrode terminals with a narrow pitch.
再者,如上所述,於本發明之一實施形態之異向性導電膜之製造方法中,於進行單軸延伸時延伸200%,換言之,即以比該第1樹脂膜4之原始長度之150%長之方式延伸,但延伸率並無特別限定。即,於將含友轉黏有導電性粒子3之第1樹脂層5的第1樹脂膜4於除了與導電性粒子 3之排列方向正交之方向以外的方向上進行單軸延伸時,亦可以比150%長之方式進行單軸延伸,而製造異向性導電膜1。再者,於本實施形態中,如下述實施例中所記載,於將第1樹脂膜4進行單軸延伸時,確認可應用延伸率至多700%。又,本發明之第1實施形態之異向性導電膜1之製造方法並不限定於700%以下。 In addition, as described above, in the method for manufacturing an anisotropic conductive film according to an embodiment of the present invention, the film is stretched by 200% when uniaxially stretched, in other words, it is more than the original length of the first resin film 4. The 150% length is extended, but the elongation is not particularly limited. That is, when the first resin film 4 containing the first resin layer 5 to which the conductive particles 3 are transferred and adhered is uniaxially stretched in a direction other than the direction orthogonal to the arrangement direction of the conductive particles 3, The anisotropic conductive film 1 can be manufactured by performing uniaxial stretching in a manner longer than 150%. Furthermore, in this embodiment, as described in the following examples, when the first resin film 4 is uniaxially stretched, it is confirmed that the applicable elongation is at most 700%. The method for manufacturing the anisotropic conductive film 1 according to the first embodiment of the present invention is not limited to 700% or less.
如此,藉由以比第1樹脂膜4之原始長度之150%長之方式進行單軸延伸,可實現異向性導電膜1之短路發生率之降低。又,於製造用於電極端子之間隔具有某程度以上之大小之連接結構體等的異向性導電膜時,亦可應用本實施形態之異向性導電膜之製造方法,而製造確實地實現端子間之導通之異向性導電膜。即,本實施形態之異向性導電膜之製造方法亦可應用於微間距應對以外之異向性導電膜之製法中。 In this way, by uniaxially stretching so as to be longer than 150% of the original length of the first resin film 4, it is possible to reduce the short-circuit occurrence rate of the anisotropic conductive film 1. Moreover, when manufacturing an anisotropic conductive film for a connection structure having an interval between electrode terminals of a certain degree or more, the manufacturing method of the anisotropic conductive film of this embodiment can also be applied, and the manufacturing can be surely achieved. Anisotropic conductive film for conducting between terminals. That is, the manufacturing method of the anisotropic conductive film of this embodiment can also be applied to the manufacturing method of the anisotropic conductive film other than the fine pitch response.
[異向性導電膜] [Anisotropic conductive film]
其次,針對本發明之第1實施形態之異向性導電膜之構成,一邊使用圖式一邊進行說明。圖7係本發明之第1實施形態之異向性導電膜之部分立體圖,圖8A係圖7之P-P剖面圖,圖8B係圖7之Q-Q剖面圖,圖9係表示本發明之第1實施形態之異向性導電膜之導電性粒子之排列狀態的俯視圖。 Next, the structure of the anisotropic conductive film according to the first embodiment of the present invention will be described using drawings. FIG. 7 is a partial perspective view of the anisotropic conductive film according to the first embodiment of the present invention, FIG. 8A is a PP sectional view of FIG. 7, FIG. 8B is a QQ sectional view of FIG. 7, and FIG. 9 is a first embodiment of the present invention. A plan view of an arrangement state of conductive particles of an anisotropic conductive film in a form.
如圖7所示,本實施形態之異向性導電膜1由含有第1樹脂膜4與第2樹脂膜7之2層以上之膜層構成。第1樹脂膜4係藉由將黏合劑樹脂(接著劑)塗佈於基礎膜6上而形成樹脂層(第1樹脂層)5,並將其成型為膜狀而成之樹脂膜。第2樹脂膜7係於基礎膜9上形成有光或熱硬化性樹脂層(第2樹脂層)8之熱硬化型或紫外線硬化型接著膜,且係層壓於含有轉黏有數個導電性粒子3之第1樹脂層5的第1樹脂膜4上之樹脂膜。 As shown in FIG. 7, the anisotropic conductive film 1 of this embodiment is composed of two or more film layers including a first resin film 4 and a second resin film 7. The first resin film 4 is a resin film obtained by applying a binder resin (adhesive) to the base film 6 to form a resin layer (first resin layer) 5 and molding the resin layer into a film shape. The second resin film 7 is a heat-curable or ultraviolet-curable adhesive film on which a light or thermosetting resin layer (second resin layer) 8 is formed on the base film 9 and is laminated on the base film 9 and contains a plurality of conductive layers. A resin film on the first resin film 4 of the first resin layer 5 of the particles 3.
如此,本實施形態之異向性導電膜1成為使第2樹脂膜7層壓於第1樹脂膜4,並於第1樹脂層5與第2樹脂層8之間保持數個導電 性粒子3之構成。再者,於本實施形態中,異向性導電膜1係以由第1樹脂層5與基礎膜6所構成之第1樹脂膜4及由第2樹脂層8與基礎膜9所構成之第2樹脂膜7此2層構成,但異向性導電膜1只要為至少由2層構成所構成者即可,因此例如對於層壓有第3樹脂層等其他樹脂層之構成之異向性導電膜,亦可應用本發明之一實施形態之異向性導電膜1。 As described above, the anisotropic conductive film 1 of this embodiment is formed by laminating the second resin film 7 on the first resin film 4 and holding a plurality of conductive particles 3 between the first resin layer 5 and the second resin layer 8. Of the composition. Furthermore, in this embodiment, the anisotropic conductive film 1 includes a first resin film 4 composed of a first resin layer 5 and a base film 6, and a first resin film 4 composed of a second resin layer 8 and a base film 9. 2 Resin film 7 This is a two-layer structure, but the anisotropic conductive film 1 is only required to be composed of at least two layers. Therefore, for example, anisotropic conductive materials having a structure in which other resin layers such as a third resin layer are laminated As the film, the anisotropic conductive film 1 according to an embodiment of the present invention may be applied.
如圖7所示,導電性粒子3係於第1樹脂層5中,於X方向(第1方向)上規則地排列而形成。又,藉由將粒子列3a於與X方向不同之Y方向(第2方向)上規則地複數並列,而使該等導電性粒子3成為分散之狀態。又,導電性粒子3亦可以特定之間隔而排列。於本實施形態中,如圖7及圖8A所示,第1樹脂層5之粒子列5a之各列間成為以向X方向延伸之方式形成為山脊狀之凸部14。即,於第1樹脂層5中,向X方向延伸之凸部14於Y方向上每隔特定之間隔被形成。 As shown in FIG. 7, the conductive particles 3 are formed in the first resin layer 5 and are regularly arranged in the X direction (first direction). Moreover, the particle arrays 3a are regularly juxtaposed in the Y direction (second direction) different from the X direction, so that the conductive particles 3 are dispersed. In addition, the conductive particles 3 may be arranged at a specific interval. In this embodiment, as shown in FIG. 7 and FIG. 8A, between the rows of the particle rows 5 a of the first resin layer 5 are ridge-like convex portions 14 formed to extend in the X direction. That is, in the first resin layer 5, the convex portions 14 extending in the X direction are formed at specific intervals in the Y direction.
並且,如圖7所示,於第1樹脂層5中,於該等凸部14之間形成向X方向延伸之溝槽形狀之凹部15,將導電性粒子3規則地配置於該等凹部15內。再者,亦有該X方向(第1方向)與Y方向(第2方向)之方向性表現為光學差異之情形。其原因在於:藉由在X方向上延伸第1樹脂層5,而於導電性粒子3之間產生大量成為溝槽形狀之空隙。該空隙為下述間隙16。此種空隙係由於將導電性粒子3於排列為直線狀之狀態下進行延伸而產生。即,於延伸時之導電性粒子3附近之至少1個大致直線狀中,產生不具備第1樹脂層5,或接近其之狀態,其會對導電性粒子3之壓接時之移動性產生影響。其亦與下述凹部15及凸部14相關聯。 As shown in FIG. 7, in the first resin layer 5, groove-shaped recessed portions 15 extending in the X direction are formed between the convex portions 14, and the conductive particles 3 are regularly arranged in the recessed portions 15. Inside. Furthermore, there may be a case where the directivity of the X direction (first direction) and the Y direction (second direction) are optically different. The reason is that, by extending the first resin layer 5 in the X direction, a large number of voids having a groove shape are generated between the conductive particles 3. This gap is a gap 16 described below. Such voids are generated by extending the conductive particles 3 in a state of being aligned in a straight line. That is, in the state where at least one of the conductive particles 3 in the vicinity of the stretched portion is substantially linear, the first resin layer 5 is not provided or is close to the first resin layer 5, which causes mobility during the pressure bonding of the conductive particles 3. influences. It is also associated with the concave portion 15 and the convex portion 14 described below.
再者,由於該間隙16係於使第1樹脂膜4延伸時產生之空隙,故而導電性粒子3附近之延伸方向上之第1樹脂層5之厚度會產生如陡峭之懸崖之狀態。如上所述,由於在第1樹脂膜4之延伸方向上產生該狀態,故而如圖8B所示,於第1方向上之導電性粒子3之間,成為2處相 同之懸崖部5c、5d大致直線狀地保持導電性粒子3之狀態。藉此,變得依存於接合時導電性粒子3移動之情形時之方向。又,於本實施形態中,所謂X方向(第1方向)表示異向性導電膜1之長度方向,所謂Y方向(第2方向)表示異向性導電膜1之寬度方向。 In addition, since the gap 16 is a gap generated when the first resin film 4 is extended, the thickness of the first resin layer 5 in the direction of extension near the conductive particles 3 may be a steep cliff. As described above, since this state occurs in the extending direction of the first resin film 4, as shown in FIG. 8B, between the conductive particles 3 in the first direction, there are two identical cliff portions 5c and 5d. The state of the conductive particles 3 is held linearly. Thereby, it becomes dependent on the direction when the conductive particle 3 moves at the time of joining. In this embodiment, the X direction (first direction) indicates the length direction of the anisotropic conductive film 1, and the Y direction (second direction) indicates the width direction of the anisotropic conductive film 1.
如上所述,於第1樹脂層5中,以向X方向延伸之方式,數個凸部14與凹部15分別並列地形成。並且,於各凹部15中,數個導電性粒子3規則地排列,因此於該凹部15中,構成粒子列3a之導電性粒子3之間成為間隙16,如圖7及圖8B所示,於該間隙16中滲入有第2樹脂層8。如此,將導電性粒子3分散保持於第1樹脂層5與第2樹脂層8之間。再者,於本實施形態中,成為將導電性粒子3分散保持於第1樹脂層5與第2樹脂層8之間之構成,但導電性粒子3於藉由轉印時之外力等而埋沒於第1樹脂層5中並進行延伸之情形時,僅存在於第1樹脂層5內。本發明之一實施形態係設為亦包含將導電性粒子3埋沒於第1樹脂層5中之後進行延伸而成之構成者。即,本實施形態之異向性導電膜1亦包含使導電性粒子3於第1樹脂層5與第2樹脂層8中,至少僅與第1樹脂層5接觸之構成者。於該情形時,導電性粒子3附近之第1樹脂層5亦成為大致直線狀地有2處相同之懸崖部5c、5d之狀態。其原因如上所示。 As described above, in the first resin layer 5, a plurality of convex portions 14 and concave portions 15 are formed side by side so as to extend in the X direction. Furthermore, in each of the recesses 15, a plurality of conductive particles 3 are regularly arranged. Therefore, in the recesses 15, gaps 16 are formed between the conductive particles 3 constituting the particle array 3 a as shown in FIGS. 7 and 8B. A second resin layer 8 is infiltrated into the gap 16. In this manner, the conductive particles 3 are dispersed and held between the first resin layer 5 and the second resin layer 8. In this embodiment, the conductive particles 3 are dispersedly held between the first resin layer 5 and the second resin layer 8. However, the conductive particles 3 are buried by external force or the like during transfer. When the first resin layer 5 is stretched, it exists only in the first resin layer 5. One embodiment of the present invention is a structure including a structure in which the conductive particles 3 are buried in the first resin layer 5 and then extended. That is, the anisotropic conductive film 1 of this embodiment also includes a structure in which conductive particles 3 are in contact with at least only the first resin layer 5 among the first resin layer 5 and the second resin layer 8. In this case, the first resin layer 5 in the vicinity of the conductive particles 3 also has a state where there are two identical cliff portions 5 c and 5 d in a substantially linear shape. The reason is shown above.
如此,於本實施形態中,於應對窄間距化之異向性導電膜1中,可確實地控制均勻分散之導電性粒子3之位置,因此可確實地實現窄間距化之端子彼此之導通。再者,於本實施形態中,為了保持異向性導電膜1之連接可靠性,異向性導電膜1成為X方向上之導電性粒子3之間隔略大於Y方向上之導電性粒子3之間隔之構成,例如理想為設為大到導電性粒子3之直徑之一半左右之構成。 As described above, in this embodiment, the position of the uniformly dispersed conductive particles 3 can be reliably controlled in the anisotropic conductive film 1 for narrowing the pitch, so that the narrow-pitch terminals can be reliably connected to each other. Furthermore, in this embodiment, in order to maintain the connection reliability of the anisotropic conductive film 1, the interval between the anisotropic conductive film 1 and the conductive particles 3 in the X direction is slightly larger than that of the conductive particles 3 in the Y direction. The configuration of the interval is preferably, for example, a configuration that is as large as about a half of the diameter of the conductive particles 3.
又,於本實施形態中,於異向性導電膜1之製造過程中,於將第1樹脂膜4在除了與導電性粒子3之排列方向正交之方向以外之方向 上進行單軸延伸時,如圖7所示,於轉黏有導電性粒子3之第1樹脂層5中形成向X方向延伸之溝槽形狀之凹部15。並且,隨著該凹部15之形成,於第1樹脂層5中形成向X方向延伸之凸部14。 In addition, in this embodiment, during the manufacturing process of the anisotropic conductive film 1, when the first resin film 4 is uniaxially stretched in a direction other than the direction orthogonal to the arrangement direction of the conductive particles 3, As shown in FIG. 7, a groove-shaped recessed portion 15 extending in the X direction is formed in the first resin layer 5 to which the conductive particles 3 are transferred and adhered. As the recessed portion 15 is formed, a convex portion 14 extending in the X direction is formed in the first resin layer 5.
即,如圖7所示,本實施形態之異向性導電膜1之第1樹脂層5成為X方向上之導電性粒子3間之部位5a比Y方向上之導電性粒子3間之部位5b薄之構成。於該部位5a之位置存在間隙16。並且,於設置於排列在凹部15中之導電性粒子3之間之間隙16中滲入有第2樹脂層8(參照圖8B)。再者,於將第1樹脂膜4進行單軸延伸時,於導電性粒子3串列連接之情形時,於將第1樹脂膜4延伸原始長度之2倍、即延伸200%之情形時,由於大部分之導電性粒子3以大致相同之直徑緊密地排列為直線狀,故而會空出1個導電性粒子3之空間。該1個導電性粒子3之空間之空出部分相當於成為第1樹脂層5中之空隙之間隙16。 That is, as shown in FIG. 7, the first resin layer 5 of the anisotropic conductive film 1 in this embodiment has a portion 5 a between the conductive particles 3 in the X direction and a portion 5 b between the conductive particles 3 in the Y direction. Thin composition. There is a gap 16 at the position of this part 5a. A second resin layer 8 is penetrated into the gap 16 between the conductive particles 3 arranged in the recessed portion 15 (see FIG. 8B). Furthermore, when the first resin film 4 is uniaxially stretched, when the conductive particles 3 are connected in series, when the first resin film 4 is stretched twice as long as the original length, that is, when it is stretched by 200%, Since most of the conductive particles 3 are closely aligned in a linear shape with approximately the same diameter, a space for one conductive particle 3 is vacated. The vacated portion of the space of the one conductive particle 3 corresponds to the gap 16 which becomes a void in the first resin layer 5.
如此,於本實施形態中,異向性導電膜1係以如下方式形成:將於第1樹脂層5中轉黏有導電性粒子3之第1樹脂膜4在除了與導電性粒子3之排列方向正交之方向以外之方向上,以至少比原始長度之150%長之方式進行單軸延伸後,層壓含有第2樹脂層8之第2樹脂膜7。因此,如圖9所示,導電性粒子3於凹部15內以向第1方向(X方向)延伸之方式規則地配置為大致直線狀,並保持於第1樹脂層5與第2樹脂層8之間。其亦可以特定之間隔而配置。因此,於應對窄間距化之異向性導電膜1中,可確實地控制均勻分散之導電性粒子3之位置,而可確實地實現窄間距化之端子彼此之導通。再者,上述所謂「配置為大致直線狀」,係指以使凹部15之寬度方向(Y方向)上之各導電性粒子3之排列之偏差收斂於粒徑之1/3以下之範圍內之狀態進行排列。 As described above, in this embodiment, the anisotropic conductive film 1 is formed in such a manner that the first resin film 4 having the conductive particles 3 transferred to the first resin layer 5 is excluding the arrangement with the conductive particles 3 After extending uniaxially so as to be longer than at least 150% of the original length in a direction other than a direction orthogonal to the direction, a second resin film 7 including a second resin layer 8 is laminated. Therefore, as shown in FIG. 9, the conductive particles 3 are regularly arranged in the concave portion 15 so as to extend in the first direction (X direction) in a substantially linear shape, and are held by the first resin layer 5 and the second resin layer 8. between. It can also be arranged at specific intervals. Therefore, in the anisotropic conductive film 1 for narrowing the pitch, the positions of the uniformly dispersed conductive particles 3 can be reliably controlled, and the narrow-pitch terminals can be reliably connected to each other. In addition, the above-mentioned "arrangement is substantially linear" means that the deviation of the arrangement of the conductive particles 3 in the width direction (Y direction) of the recessed portion 15 is converged to a range of 1/3 or less of the particle diameter. The states are arranged.
[連接結構體] [Connection structure]
其次,針對本發明之第1實施形態之連接結構體之構成,一邊使用圖 式一邊進行說明。圖10係表示應用本發明之第1實施形態之異向性導電膜之連接結構體之構成的概略剖面圖。如圖10所示,本發明之第1實施形態之連接結構體50例如係經由上述異向性導電膜1,將IC晶片等電子零件52電性及機械地連接固定於可撓性配線基板或液晶面板等基板54上而成者。電子零件52形成有作為連接端子之凸塊56。另一方面,於基板54之上面,於與凸塊56對向之位置形成有電極58。 Next, the structure of the connection structure according to the first embodiment of the present invention will be described using drawings. FIG. 10 is a schematic cross-sectional view showing the configuration of a connection structure to which the anisotropic conductive film according to the first embodiment of the present invention is applied. As shown in FIG. 10, the connection structure 50 according to the first embodiment of the present invention is an electronic component 52 such as an IC chip that is electrically and mechanically connected and fixed to a flexible wiring board or It is formed on a substrate 54 such as a liquid crystal panel. The electronic component 52 is formed with a bump 56 as a connection terminal. On the other hand, an electrode 58 is formed on the substrate 54 at a position facing the bump 56.
並且,於電子零件52之凸塊56與形成於基板54上之電極58之間,及電子零件52與配線基板54之間,介隔有成為接著劑之本實施形態之異向性導電膜1。於凸塊56與電極58之對向之部分,將異向性導電膜1中所含有之導電性粒子3壓碎,而實現電性導通。又,與此同時,藉由構成異向性導電膜1之接著劑成分,亦實現電子零件52與基板54之機械接合。 Further, an anisotropic conductive film 1 of this embodiment serving as an adhesive is interposed between the bump 56 of the electronic component 52 and the electrode 58 formed on the substrate 54 and between the electronic component 52 and the wiring substrate 54. . The conductive particles 3 contained in the anisotropic conductive film 1 are crushed at the portion where the bumps 56 and the electrodes 58 face each other to achieve electrical conduction. At the same time, mechanical bonding between the electronic component 52 and the substrate 54 is also achieved by the adhesive component constituting the anisotropic conductive film 1.
如此,本實施形態之連接結構體50係於使應力緩和之狀態下,藉由獲得高接著強度之異向性導電膜1將形成有電極58之基板54與設置有凸塊56之電子零件52連接而構成。即,於連接結構體50之電子零件52與基板54之連接時,使用本實施形態之異向導電性膜1。 In this way, the connection structure 50 of this embodiment is in a state where the stress is relaxed, and the substrate 54 on which the electrode 58 is formed and the electronic component 52 on which the bump 56 is provided by obtaining the anisotropic conductive film 1 with high adhesion strength. Connected. That is, when connecting the electronic component 52 and the substrate 54 of the structural body 50, the anisotropic conductive film 1 of this embodiment is used.
如上所述,本發明之一實施形態之異向性導電膜1係於第1樹脂層5形成凸部14與凹部15,將於該凹部15中規則地排列有導電性粒子3者利用第2樹脂層8進行層壓,而保持於兩樹脂層5、8中。該規則性亦可以特定之間隔而配置。因此,各導電性粒子3藉由凸部14而確實地變得難以於圖10中之水平方向上移動,而得以分散保持。因此,接合時之導電性粒子3之移動依存於導電性粒子3間之空隙即間隙16,且受其形狀支配之要素較大。 As described above, the anisotropic conductive film 1 according to an embodiment of the present invention is formed on the first resin layer 5 to form the convex portion 14 and the concave portion 15. Those who have the conductive particles 3 regularly arranged in the concave portion 15 use the second The resin layer 8 is laminated and held in the two resin layers 5 and 8. The regularity can also be configured at specific intervals. Therefore, each of the conductive particles 3 is reliably made difficult to move in the horizontal direction in FIG. 10 by the convex portions 14 and is dispersedly held. Therefore, the movement of the conductive particles 3 at the time of joining depends on the gap 16 between the conductive particles 3, that is, the gap 16, and the elements governed by the shape are large.
因此,可確保連接結構體50之基板54與電子零件52之良好之連接性,而可長時間提高電性及機械連接之可靠性。即,藉由使用本 實施形態之異向性導電膜1,可製造導通可靠性高之連接結構體50。再者,作為本實施形態之連接結構體50之具體例,可列舉半導體裝置、液晶顯示裝置、LED照明裝置等。 Therefore, good connectivity between the substrate 54 of the connection structure 50 and the electronic component 52 can be ensured, and the reliability of electrical and mechanical connection can be improved for a long time. That is, by using the anisotropic conductive film 1 of this embodiment, a connection structure 50 having high conduction reliability can be manufactured. In addition, specific examples of the connection structure 50 in this embodiment include a semiconductor device, a liquid crystal display device, and an LED lighting device.
(第2實施形態) (Second Embodiment)
於本發明之第2實施形態之異向性導電膜之製造方法中,於將導電性粒子埋入並排列於片材之溝槽時,為了不損傷導電性粒子地提高導電性粒子向樹脂層之轉黏效率,使用成為溝槽之深度形成為小於導電性粒子之直徑的模具之片材、及於與導電性粒子之接觸面上以特定間隔設置有可誘導至該溝槽之數個突起部之導引體。 In the method for manufacturing an anisotropic conductive film according to the second embodiment of the present invention, when the conductive particles are buried and arranged in the grooves of the sheet, the conductive particles are raised to the resin layer so as not to damage the conductive particles. For the conversion efficiency, a sheet material having a depth of less than the diameter of the conductive particles is used as a groove, and a plurality of protrusions that can be induced into the groove are provided at a specific interval on the contact surface with the conductive particles. Department of the guide.
針對本發明之第2實施形態之異向性導電膜之製造方法,一邊使用圖式一邊進行說明。圖11A、B係本發明之第2實施形態之異向性導電膜之製造方法中所使用之導引體的概略構成圖,圖12係表示本發明之第2實施形態之異向性導電膜之製造方法中所使用之片材之概略構成的剖面圖,圖13係用以說明本發明之第2實施形態之異向性導電膜之製造方法中於片材之溝槽埋入並排列導電性粒子之動作的剖面圖。再者,圖11A係示意性地表示本發明之第2實施形態中所使用之導引體之特徵部即與導電性粒子之接觸面側者,圖11B係示意性地表示本發明之第2實施形態中所使用之導引體之剖面者,圖13係以剖面圖表示於片材之溝槽埋入並排列導電性粒子之動作狀態者。 A method for manufacturing the anisotropic conductive film according to the second embodiment of the present invention will be described using drawings. 11A and 11B are schematic configuration diagrams of a guide used in a method for manufacturing an anisotropic conductive film according to a second embodiment of the present invention, and FIG. 12 is an anisotropic conductive film according to a second embodiment of the present invention A cross-sectional view of a schematic structure of a sheet used in a manufacturing method. FIG. 13 is a diagram for explaining a method for manufacturing an anisotropic conductive film according to a second embodiment of the present invention, and the conductive material is buried in the grooves of the sheet and arranged to conduct electricity. Sectional view of the action of sex particles. In addition, FIG. 11A schematically shows a characteristic portion of the guide body used in the second embodiment of the present invention, that is, the contact surface side with the conductive particles, and FIG. 11B schematically shows the second part of the present invention. For a cross-section of the guide used in the embodiment, FIG. 13 is a cross-sectional view showing a state in which conductive particles are embedded and arranged in a groove of a sheet.
如圖11A所示,本實施形態中所使用之導引體112於與導電性粒子103之接觸面112a上,於導引體112之寬度方向即圖11A所示之E方向上以特定間隔設置有可誘導至片材102之溝槽110(參照圖12)中之數個突起部112b。又,如圖11A所示,該等突起部112b以向導引體112之接觸面112a之長度方向即圖11A所示之F方向延伸之方式以特定間隔而設置。再者,導引體112之製法可與片材102大致相同,又,導引體112之材 料亦可使用與片材102相同者。 As shown in FIG. 11A, the guide bodies 112 used in this embodiment are arranged at specific intervals on the contact surface 112a with the conductive particles 103 in the width direction of the guide bodies 112, that is, in the E direction shown in FIG. 11A. There are several protrusions 112b that can be induced into the grooves 110 (see FIG. 12) of the sheet 102. As shown in FIG. 11A, the protrusions 112 b are provided at specific intervals so as to extend in the longitudinal direction of the contact surface 112 a of the guide body 112, that is, in the F direction shown in FIG. 11A. In addition, the manufacturing method of the guide body 112 may be substantially the same as that of the sheet material 102, and the material of the guide body 112 may also be the same as that of the sheet material 102.
於將導電性粒子103填充於片材102之溝槽110中時,為了使流動之導電性粒子103容易分開,如圖11B所示,突起部112b之形狀成為自設置之接觸面側所具有之基端部112b1向前端部112b2前端逐漸變細之大致三角錐形狀。藉由將突起部112b設為自基端部112b1向前端部112b2前端逐漸變細之形狀,於將導電性粒子103填充於片材102之溝槽110中時,若使導引體112於長度方向(F方向)上移動,則於接觸面112a流動之導電性粒子103會被突起部112b之斜面112b3分開。因此,藉由使用設置有突起部112b之導引體112,變得容易將導電性粒子103誘導至溝槽110中。再者,突起部112b之形狀只要為自基端部112b1向前端部112b2前端逐漸變細之形狀,則並不限定於大致三角錐形狀,例如亦可應用圓錐形狀或圓錐台形狀等其他形狀。又,突起部112b之形狀並不限定於僅以直線形成之形狀,亦可於部分或全部含有曲線。 When the conductive particles 103 are filled in the grooves 110 of the sheet 102, in order to make it easier to separate the flowing conductive particles 103, as shown in FIG. 11B, the shape of the protruding portion 112b is the same as that provided on the contact surface side provided. The base end portion 112b1 has a generally triangular pyramid shape that tapers toward the front end of the front end portion 112b2. When the protruding portion 112b is tapered from the base end portion 112b1 to the tip end of the front end portion 112b2, when the conductive particles 103 are filled in the grooves 110 of the sheet 102, the guide body 112 is made to have a length When moving in the direction (direction F), the conductive particles 103 flowing on the contact surface 112a are separated by the inclined surface 112b3 of the protrusion 112b. Therefore, by using the guide body 112 provided with the protrusion 112b, it becomes easy to induce the conductive particles 103 into the grooves 110. The shape of the protruding portion 112b is not limited to a generally triangular pyramid shape as long as the shape of the protruding portion 112b1 is gradually tapered from the base end portion 112b1 to the front end of the front end portion 112b2. For example, other shapes such as a conical shape or a truncated cone shape may be applied. In addition, the shape of the protruding portion 112b is not limited to a shape formed only by a straight line, and may include a curve partially or entirely.
又,如圖11B所示,於導引體112之接觸面112a之邊緣部側,設置有高度與突起部112b大致相同或略低之側壁部112c。如此,藉由在導引體112之接觸面112a之邊緣部側設置側壁部112c,於使用導引體112填充導電性粒子103時,可防止導電性粒子103向導引體112之接觸面112a之外側漏出,因此可提高導電性粒子103之填充效率。 As shown in FIG. 11B, a side wall portion 112 c having a height substantially the same as or slightly lower than the protrusion portion 112 b is provided on the edge portion side of the contact surface 112 a of the guide body 112. As described above, by providing the side wall portion 112c on the edge portion side of the contact surface 112a of the guide body 112, when the conductive particles 103 are filled with the guide body 112, it is possible to prevent the conductive particles 103 from contacting the contact surface 112a of the guide body 112. Since the outer side leaks, the filling efficiency of the conductive particles 103 can be improved.
進而,如上所述,突起部112b係於導引體112之寬度方向(E方向)上以特定間隔而設置,該突起部112b之間成為間隙部112d。導引體112之寬度方向上之突起部112b之間隔如圖11B所示,突起部112b之基端部112b1之間隔即間隙部112d之基端部112d1之寬度W1與片材102之溝槽110之寬度W(參照圖12)大致相同。由此,導引體112成為突起部112b之前端部112b2之間隔即間隙部112d之前端部112d2之寬度W2大於片材102之溝槽110之寬度W之構成。 Furthermore, as described above, the protruding portions 112b are provided at a predetermined interval in the width direction (E direction) of the guide body 112, and the protruding portions 112b become gap portions 112d. The interval between the protruding portions 112b in the width direction of the guide body 112 is shown in FIG. 11B. The interval between the base end portion 112b1 of the protruding portion 112b, that is, the width W1 of the base portion 112d1 of the gap portion 112d and the groove 110 of the sheet 102. The widths W (see FIG. 12) are substantially the same. Accordingly, the guide body 112 has a configuration in which the interval between the front ends 112b2 of the protruding portions 112b, that is, the width W2 of the front ends 112d2 of the gap portions 112d is larger than the width W of the grooves 110 of the sheet 102.
藉由將導引體112設為如上所述之構成,於使用導引體112在片材102之溝槽110中填充導電性粒子103時,導入至突起部112b之間之導電性粒子103被導引體112之突起部112b之斜面部112c分開。並且,將已分開之導電性粒子103誘導至突起部112b之間所具有之間隙部112d中之後,使之於導引體112之接觸面112a之長度方向(F方向)上流動,而誘導至片材102之溝槽110中。因此,於將導電性粒子103埋入並排列於片材102之溝槽110中時,變得容易將導電性粒子103誘導至片材102之溝槽110中,因此可提高對片材102之溝槽110之填充效率。 When the guide body 112 is configured as described above, when the grooves 110 of the sheet 102 are filled with the conductive particles 103 using the guide body 112, the conductive particles 103 introduced between the protrusions 112b are covered. The oblique surface 112c of the protruding portion 112b of the guide body 112 is separated. After the separated conductive particles 103 are induced into the gap portion 112d between the protruding portions 112b, the conductive particles 103 are caused to flow in the length direction (F direction) of the contact surface 112a of the guide body 112, and are induced to In the groove 110 of the sheet 102. Therefore, when the conductive particles 103 are buried and arranged in the grooves 110 of the sheet 102, it becomes easy to induce the conductive particles 103 into the grooves 110 of the sheet 102, so that the Filling efficiency of the trench 110.
又,於本實施形態中,如圖12所示,使用溝槽110之深度D小於導電性粒子103之直徑而形成之片材102。具體而言,於片材102,形成有導電性粒子103之直徑之1/3~1/2左右之深度D的溝槽110。又,溝槽110之寬度W具有與導電性粒子103之直徑大致相同至略大之寬度。如此,藉由使用溝槽110之深度D形成為小於導電性粒子103之直徑、且溝槽110之寬度W具有與導電性粒子103之直徑大致相同至略大之寬度W的片材102,於使導電性粒子103轉黏於第1樹脂膜104中所含有之樹脂層105(參照圖14)時,對樹脂層105之接觸面積增加,因此可提高轉黏效率。又,藉由將片材102之溝槽110設為較淺之構成,於使導電性粒子103轉黏於樹脂層105時,不會對導電性粒子103施加多餘之應力,因此變得不易於損傷導電性粒子103。 Moreover, in this embodiment, as shown in FIG. 12, the sheet | seat 102 formed using the depth D of the groove 110 smaller than the diameter of the electroconductive particle 103 is used. Specifically, a groove 110 having a depth D of about 1/3 to 1/2 of the diameter of the conductive particles 103 is formed in the sheet 102. The width W of the trench 110 has a width substantially the same as or slightly larger than the diameter of the conductive particles 103. In this way, by using the sheet 102 in which the depth D of the trench 110 is formed to be smaller than the diameter of the conductive particles 103 and the width W of the trench 110 has a width W substantially the same as or slightly larger than the diameter of the conductive particles 103, When the conductive particles 103 are transferred to the resin layer 105 (see FIG. 14) contained in the first resin film 104, the contact area with the resin layer 105 is increased, so the transfer efficiency can be improved. In addition, by making the grooves 110 of the sheet 102 shallower, it is not easy to apply excessive stress to the conductive particles 103 when the conductive particles 103 are transferred to the resin layer 105. The conductive particles 103 are damaged.
如此,於本實施形態中,於將導電性粒子103埋入並排列於片材102之溝槽110中時,使用溝槽110之深度D形成為小於導電性粒子之直徑的片材102,及於與導電性粒子103之接觸面112a上以特定間隔設置有可誘導至片材102之溝槽110中之數個突起部112b的導引體112。具體而言,於將導電性粒子103埋入並排列於片材102之溝槽110中時,如圖13所示,使導引體112之突起部112b之前端部112b2抵接於片材102之溝 槽110之間所具有之間隙部102a。並且,一面使導引體112於片材102之長度方向(圖2所示之A方向)上移動,一面使導電性粒子103填充於溝槽110中。 Thus, in this embodiment, when the conductive particles 103 are buried and arranged in the grooves 110 of the sheet 102, the depth D of the grooves 110 is used to form the sheet 102 smaller than the diameter of the conductive particles, and On the contact surface 112a of the conductive particles 103, a guide body 112 is provided at a predetermined interval so as to induce a plurality of protrusions 112b in the groove 110 of the sheet 102. Specifically, when the conductive particles 103 are buried and arranged in the grooves 110 of the sheet 102, as shown in FIG. 13, the front end portion 112 b 2 of the protruding portion 112 b of the guide body 112 is brought into contact with the sheet 102. A gap portion 102 a between the grooves 110. The grooves 110 are filled with the conductive particles 103 while the guide body 112 is moved in the longitudinal direction of the sheet 102 (direction A shown in FIG. 2).
即,於本實施形態中,使用於接觸面112a形成有突起部112b之導引體112,一邊調整溝槽110中之導電性粒子103之排列,一邊使導電性粒子103填充於片材102之溝槽110中。此時,填充至片材102之溝槽110中之多餘之導電性粒子103會藉由導引體112之突起部112b而被去除,因此即便使用溝槽110較淺之片材102,亦可將必要量之導電性粒子103排列於溝槽110中。 That is, in this embodiment, the guide body 112 having the protrusions 112b formed on the contact surface 112a is used to fill the conductive particles 103 in the sheet 102 while adjusting the arrangement of the conductive particles 103 in the grooves 110. In the trench 110. At this time, the excess conductive particles 103 filled in the grooves 110 of the sheet 102 are removed by the protrusions 112b of the guide body 112. Therefore, even if the sheet 102 having a shallow groove 110 is used, A necessary amount of the conductive particles 103 are arranged in the trench 110.
又,於本實施形態中,藉由使用深度D小於導電性粒子103之直徑之溝槽110之片材102,及於接觸面112a具有突起部112b之導引體112,可不損傷導電性粒子103地提高導電性粒子103向樹脂層105之轉黏效率。因此,可提高異向性導電膜101之生產效率,並且實現異向性導電膜101之高品質化。 Further, in this embodiment, by using the sheet 102 having the depth D smaller than the diameter of the conductive particles 103 and the guide body 112 having the protrusion 112b on the contact surface 112a, the conductive particles 103 are not damaged. This improves the transfer efficiency of the conductive particles 103 to the resin layer 105. Therefore, the production efficiency of the anisotropic conductive film 101 can be improved, and the quality of the anisotropic conductive film 101 can be improved.
再者,於本實施形態中,於使導電性粒子103轉黏於第1樹脂膜104之樹脂層105時,由於使用較淺之溝槽110之片材102,故而導電性粒子103於在溝槽110內未牢固固定之狀態下轉黏於樹脂層105。因此,如圖14所示,粒子列103a於樹脂層105中,以向成為異向性導電膜101之長度方向之第1方向(圖14所示之A方向)延伸之方式,導電性粒子103於形成於樹脂層105中之凹部115之寬度方向(B方向)上相互錯開而配置。具體而言,如圖14所示,以使各導電性粒子103之排列之偏差收斂於粒徑之1.5倍之範圍內的方式於該寬度方向上無規地排列。 Furthermore, in this embodiment, when the conductive particles 103 are transferred to the resin layer 105 of the first resin film 104, since the sheet 102 having the shallow grooves 110 is used, the conductive particles 103 are in the grooves. In the state where the groove 110 is not firmly fixed, the resin layer 105 is adhered to the resin layer 105. Therefore, as shown in FIG. 14, the particle array 103 a in the resin layer 105 extends in the first direction (the A direction shown in FIG. 14) that becomes the longitudinal direction of the anisotropic conductive film 101, and the conductive particles 103 The recessed portions 115 formed in the resin layer 105 are arranged so as to be shifted from each other in the width direction (direction B). Specifically, as shown in FIG. 14, the random arrangement in the width direction is performed so that the variation in the arrangement of the conductive particles 103 converges within a range of 1.5 times the particle size.
(第3實施形態) (Third Embodiment)
於本發明之第3實施形態之異向性導電膜之製造方法中,於將導電性粒子埋入並排列於片材之溝槽時,為了提高對片材之溝槽之填充效率,而 使用將溝槽設為電極間之間隙之片材及具有導電性之刮板。 In the method for manufacturing an anisotropic conductive film according to the third embodiment of the present invention, when conductive particles are buried and arranged in a groove of a sheet, it is used in order to improve the filling efficiency of the groove of the sheet. The groove is a sheet material with a gap between the electrodes and a conductive blade.
針對本發明之第3實施形態之異向性導電膜之製造方法,一邊使用圖式一邊進行說明。圖15A至C係表示本發明之第3實施形態之異向性導電膜之製造方法中所應用之導電性粒子之填充步驟的剖面圖,圖16係表示本發明之第3實施形態之異向性導電膜之製造方法中之填充步驟結束後之導電性粒子向片材之排列狀態的俯視圖。 A method for manufacturing an anisotropic conductive film according to a third embodiment of the present invention will be described using drawings. 15A to 15C are cross-sectional views showing a filling step of conductive particles used in a method for manufacturing an anisotropic conductive film according to a third embodiment of the present invention, and Fig. 16 is a view showing anisotropy of the third embodiment of the present invention A plan view of an arrangement state of the conductive particles on the sheet after the filling step in the manufacturing method of the conductive film is completed.
本實施形態之特徵在於:為了提高對片材202之溝槽210之填充效率,將以向片材202之長度方向(圖16所示之A方向)延伸之方式以特定間隔設置於片材202上的電極220之間隙作為導電性粒子203之填充對象之溝槽210,且使各電極220產生磁力。於由基板構成之片材202,如圖15所示,於片材202之寬度方向(圖16所示之B方向)上以特定之間隔設置有數個向片材202之長度方向(A方向)延伸之電極220。 This embodiment is characterized in that, in order to improve the filling efficiency of the grooves 210 of the sheet 202, the sheet 202 is provided at a specific interval so as to extend in the length direction of the sheet 202 (direction A shown in FIG. 16). The gap between the upper electrodes 220 serves as the trench 210 to be filled by the conductive particles 203, and each electrode 220 generates a magnetic force. As shown in FIG. 15, on the sheet material 202 made of a substrate, a plurality of lengthwise directions (A direction) of the sheet material 202 are provided at specific intervals in the width direction of the sheet material 202 (direction B in FIG. 16). Extending the electrode 220.
並且,藉由對各電極220通電等而產生磁力。藉此,可將導電性粒子203吸引至電極220,而於電極間所具有之溝槽210中將導電性粒子203設置為大致直線狀。又,於本實施形態中,藉由調整電極220產生之磁力強度,可適當控制導電性粒子203之轉印。又,除了利用電極220適當調整磁力以外,例如亦可為如下方案:藉由以一定磁力於電極220之排列間設置導電性粒子203後,於轉印時對轉印體之相反之面施加更強之磁力,而適當調整作用於導電性粒子203之磁力。 Then, a magnetic force is generated by energizing each electrode 220 or the like. Thereby, the conductive particles 203 can be attracted to the electrode 220, and the conductive particles 203 can be provided in a substantially linear shape in the groove 210 provided between the electrodes. Further, in this embodiment, the transfer of the conductive particles 203 can be appropriately controlled by adjusting the magnetic force intensity generated by the electrode 220. In addition to appropriately adjusting the magnetic force using the electrode 220, for example, a scheme may be adopted in which conductive particles 203 are arranged between the arrays of the electrode 220 with a certain magnetic force, and the opposite side of the transfer body is further applied during transfer. Strong magnetic force, the magnetic force acting on the conductive particles 203 is appropriately adjusted.
又,本實施形態中設置有用以將導電性粒子203填充於溝槽210中之刮板212。刮板212藉由一邊抵接於各電極220,一邊於電極220之長度方向(圖16所示之A方向)上移動,而去除附著於電極220上之多餘之導電性粒子203,並將導電性粒子203填充於各溝槽210內。又,本實施形態之特徵在於:為了維持各電極220所產生之磁力,而使用由具有導電性之金屬等材質形成之刮板212。再者,刮板212只要為賦予帶電性之金 屬等材質,則其材質並無特別限定。 In this embodiment, a squeegee 212 is provided to fill the conductive particles 203 in the trench 210. The squeegee 212 moves in the longitudinal direction (direction A shown in FIG. 16) of the electrode 220 while abutting on each electrode 220 to remove the excess conductive particles 203 attached to the electrode 220 and conducts electricity. The sexual particles 203 are filled in the respective grooves 210. Moreover, this embodiment is characterized in that, in order to maintain the magnetic force generated by each electrode 220, a scraper 212 formed of a material such as a metal having conductivity is used. The material of the squeegee 212 is not particularly limited as long as it is a material such as a metal that imparts electrification.
如此,於本實施形態中,藉由在片材203上設置電極220,於將導電性粒子203填充於片材202之溝槽210中時,首先於電極220之間在相對於該電極220之長度方向(圖16所示之A方向)及寬度方向(B方向)成為鉛垂之方向之C方向(參照圖15A)上產生磁力。 As described above, in this embodiment, by providing the electrode 220 on the sheet 203, when the conductive particles 203 are filled in the groove 210 of the sheet 202, the electrode 220 is first positioned between the electrode 220 and the electrode 220. Magnetic force is generated in the C direction (refer to FIG. 15A) in which the longitudinal direction (the A direction shown in FIG. 16) and the width direction (the B direction) are vertical.
於本實施形態中,由於使各電極220產生磁力,故而不會對導電性粒子203施加多餘之應力,而使導電性粒子203確實地附著於電極220。並且,如圖15A所示,該等附著於電極220之導電性粒子203變得填充於電極220間所具有之溝槽210中。又,於本實施形態中,藉由使電極220產生磁力,而使導電性粒子203附著於電極220,因此如圖15A所示,填充於溝槽210中之導電性粒子203變得附著於構成溝槽210之側壁之電極220之側壁220a、220b之任一側。因此,將第1樹脂膜204進行延伸後,其亦靠近形成其寬度之任一側。 In this embodiment, since the magnetic force is generated in each electrode 220, the conductive particles 203 are not attached with an excessive stress, and the conductive particles 203 are reliably attached to the electrodes 220. As shown in FIG. 15A, the conductive particles 203 attached to the electrodes 220 are filled in the trenches 210 provided between the electrodes 220. In addition, in this embodiment, since the electrode 220 generates magnetic force and the conductive particles 203 are attached to the electrode 220, as shown in FIG. 15A, the conductive particles 203 filled in the trench 210 become attached to the structure. Either of the sidewalls 220a, 220b of the electrode 220 on the sidewall of the trench 210. Therefore, after the first resin film 204 is stretched, it is also close to either side forming its width.
使導電性粒子203附著於各電極220之後,其次如圖15B所示,將存在於電極220上之多餘之導電性粒子203利用刮板212去除。於本實施形態中,於利用刮板212去除多餘之導電性粒子203時,有時會對導電性粒子203之表面之鍍敷等造成輕微損傷,但並非為對完成後之異向性導電膜201之導通可靠性等性能產生影響之程度的損傷。若利用刮板212去除多餘之導電性粒子203,並調整所需之導電性粒子203之排列,則如圖15C所示,完成導電性粒子203向片材202之溝槽210之填充。 After the conductive particles 203 are attached to each of the electrodes 220, as shown in FIG. 15B, the excess conductive particles 203 existing on the electrodes 220 are removed by the squeegee 212. In this embodiment, when the excess conductive particles 203 are removed by the squeegee 212, the surface plating of the conductive particles 203 may be slightly damaged, but it is not an anisotropic conductive film after completion. Damage to the extent that performance such as conduction reliability of 201 is affected. If the excess conductive particles 203 are removed by the squeegee 212 and the required arrangement of the conductive particles 203 is adjusted, as shown in FIG. 15C, the filling of the conductive particles 203 into the grooves 210 of the sheet 202 is completed.
如此,於本實施形態中,藉由使用將電極220間之間隙設為溝槽210之片材202,於藉由通電等使電極220產生磁力後,不施加多餘之應力而將導電性粒子203利用所產生之磁力吸引至電極220。並且,一邊利用具有導電性之刮板212去除多餘之導電性粒子203,一邊將導電性粒子203填充於溝槽210內。並且,使填充於片材202之溝槽210中之導電性粒子 203轉黏於第1樹脂膜204(參照圖17)。因此,於將導電性粒子203轉黏於第1樹脂膜204之前,可將該導電性粒子203效率良好且確實地填充於片材202之溝槽210中。即,藉由在所需之片材202設置電極220後使之產生磁力,可提高對轉黏導電性粒子203時使用之片材202之溝槽210之填充效率。尤其於本實施形態中,效率良好且確實地進行導電性粒子203向片材202之溝槽210之填充,因此與第1及第2實施形態相比,於效率良好地製造長條化之異向性導電膜時亦可應用。 As described above, in this embodiment, by using the sheet 202 having the gap between the electrodes 220 as the groove 210, the conductive particles 203 are not subjected to excessive stress after the magnetic force is generated by the electrode 220 by applying electricity or the like. The generated magnetic force is used to attract the electrode 220. Then, the conductive particles 203 are filled in the trenches 210 while removing the excess conductive particles 203 with the conductive blade 212. Then, the conductive particles 203 filled in the grooves 210 of the sheet 202 are transferred to the first resin film 204 (see Fig. 17). Therefore, before the conductive particles 203 are transferred to the first resin film 204, the conductive particles 203 can be efficiently and surely filled in the grooves 210 of the sheet 202. That is, by providing a magnetic force after the electrode 220 is provided on the required sheet 202, the filling efficiency of the groove 210 of the sheet 202 used when the conductive particles 203 are transferred can be improved. In particular, in this embodiment, the grooves 210 of the sheet 202 are filled with the conductive particles 203 efficiently and reliably. Therefore, compared with the first and second embodiments, the difference in lengthening is efficiently produced. It can also be used in the case of anisotropic conductive film.
又,於本實施形態中,如圖16所示,填充於片材202之溝槽210中之導電性粒子203附著於電極220之側壁220a、220b之任一側,並保持於電極間。因此,若將填充於片材202之溝槽210中之導電性粒子203轉黏於第1樹脂膜204之樹脂層205後,於長度方向(A方向)上進行單軸延伸,則如圖17所示,導電性粒子203分別沿著樹脂層205所形成之凹部215之側緣部215a、215b之任一側配置。即,於本實施形態之異向性導電膜201中,各粒子列203a成為導電性粒子203分別沿著樹脂層205所形成之凹部215之側緣部215a、215b之任一側配置之構成。再者,由於各粒子列203a中之異向性導電膜201之寬度方向(B方向)上之導電性粒子203之偏差受溝槽210之寬度W影響,故而例如於將導電性粒子203之粒徑設為3.0μm,將溝槽寬度設為3.5~4.0μm左右之情形時,其偏差成為粒徑之1/3左右。 In this embodiment, as shown in FIG. 16, the conductive particles 203 filled in the grooves 210 of the sheet 202 are attached to either side of the side walls 220 a and 220 b of the electrode 220 and are held between the electrodes. Therefore, if the conductive particles 203 filled in the grooves 210 of the sheet 202 are transferred to the resin layer 205 of the first resin film 204 and then uniaxially extended in the longitudinal direction (direction A), as shown in FIG. 17 As shown, the conductive particles 203 are arranged along either side of the side edge portions 215 a and 215 b of the recessed portion 215 formed in the resin layer 205. That is, in the anisotropic conductive film 201 of this embodiment, each particle row 203 a has a configuration in which conductive particles 203 are arranged along either side of the side edge portions 215 a and 215 b of the recessed portion 215 formed in the resin layer 205. Furthermore, since the deviation of the conductive particles 203 in the width direction (direction B) of the anisotropic conductive film 201 in each particle row 203a is affected by the width W of the groove 210, for example, the particles of the conductive particles 203 are When the diameter is set to 3.0 μm and the groove width is set to about 3.5 to 4.0 μm, the deviation becomes about 1/3 of the particle diameter.
於以上之情形中,存在由於導電性粒子203與電極220及刮板212強烈地摩擦,而產生滑動痕之情形。例如於使用鍍敷粒子作為導電性粒子203之情形時,導電性粒子203之表面之一部分會剝離或捲縮。又,於使用金屬粒子作為導電性粒子203之情形時,亦有導電性粒子203之一部分發生變形之情形。此種滑動痕藉由產生為導電性粒子203之表面積之5%以上,而於黏合劑樹脂205之轉印時或異向性導電膜201之熱加壓時等抑制 導電性粒子203之流動。又,產生滑動痕之導電性粒子203只要為整體之50%以內,則對異向性導電膜201之導通性能並無影響,較佳為將該滑動痕之發生率設為全部導電性粒子數之25%以內,更佳為未達15%。 In the above cases, the conductive particles 203 and the electrode 220 and the squeegee 212 are strongly rubbed to cause a sliding mark. For example, when plated particles are used as the conductive particles 203, a part of the surface of the conductive particles 203 is peeled off or rolled up. When metal particles are used as the conductive particles 203, a part of the conductive particles 203 may be deformed. Such a sliding mark suppresses the flow of the conductive particles 203 during the transfer of the adhesive resin 205 or the heat pressing of the anisotropic conductive film 201 by generating more than 5% of the surface area of the conductive particles 203. In addition, as long as the conductive particles 203 that generate the sliding marks are within 50% of the total, there is no effect on the conduction performance of the anisotropic conductive film 201. It is preferable to set the occurrence rate of the sliding marks to the total number of conductive particles. Within 25%, more preferably less than 15%.
[實施例] [Example]
<本發明之第1至第3實施形態中共用之實施例> <Examples common to the first to third embodiments of the present invention>
其次,對本發明之實施例進行說明。於本實施例中,準備溝槽10之形狀、尺寸不同之數個片材2,於使導電性粒子3填充、排列於各樣品中後,將導電性粒子3轉印至第1樹脂膜4,於單軸延伸後層壓第2樹脂膜7而製造異向性導電膜1之樣品。 Next, an embodiment of the present invention will be described. In this embodiment, several sheets 2 having different shapes and sizes of the grooves 10 are prepared, and after the conductive particles 3 are filled and arranged in each sample, the conductive particles 3 are transferred to the first resin film 4 A sample of the anisotropic conductive film 1 was produced by laminating the second resin film 7 after uniaxial stretching.
各實施例之片材2係使用厚度50μm之聚丙烯膜(東麗股份有限公司製造:Torayfan 2500H)。於該片材2,對形成有特定之溝槽圖案之模具於180℃下進行30分鐘之熱壓,而形成溝槽10。填充、排列於片材2之溝槽10中之導電性粒子3係對樹脂核心粒子鍍金而成者(積水化學股份有限公司製造:AUL703)。將該導電性粒子3撒在片材2之溝槽10之形成面,利用鐵氟龍(註冊商標)製造之刮板使之均勻地填充、排列於溝槽10中。 The sheet 2 of each example used a polypropylene film (manufactured by Toray Corporation: Torayfan 2500H) with a thickness of 50 μm. On the sheet 2, a mold having a specific groove pattern was hot-pressed at 180 ° C. for 30 minutes to form a groove 10. The conductive particles 3 filled and arranged in the grooves 10 of the sheet 2 are obtained by plating resin core particles with gold (made by Sekisui Chemical Co., Ltd .: AUL703). The conductive particles 3 were sprinkled on the formation surface of the grooves 10 of the sheet 2, and they were uniformly filled and arranged in the grooves 10 with a blade made of Teflon (registered trademark).
又,作為層壓於排列有導電性粒子3之片材2上之第1樹脂膜4、及層壓於第1樹脂膜4上之第2樹脂膜7,係使微膠囊型胺系硬化劑(旭化成E-MATERIALS股份有限公司製造:Novacure HX3941HP)50份、液狀環氧樹脂(三菱化學股份有限公司製造:EP828)14份、苯氧基樹脂(新日鐵化學股份有限公司製造:YP50)35份、矽烷偶合劑(信越化學股份有限公司製造:KBE403)1份混合分散,而形成黏合劑樹脂組成物。並且,對於第1樹脂膜4,將該黏合劑樹脂組成物以厚度成為5μm之方式塗佈於無延伸聚丙烯膜(東麗股份有限公司製造:Torayfan NO3701J),對於第2樹脂膜7,將該黏合劑樹脂組成物以厚度成為15μm之方式塗佈於無延伸 聚丙烯膜(東麗股份有限公司製造:Torayfan NO3701J),藉此製作於一面形成有樹脂層5或8之片狀之熱硬化性樹脂膜。又,使用延伸前至轉印為止之第1樹脂膜4之尺寸為20×30cm及A4尺寸左右者,而製作異向性導電膜1之樣品。 In addition, as the first resin film 4 laminated on the sheet 2 on which the conductive particles 3 are arranged, and the second resin film 7 laminated on the first resin film 4, a microcapsule-type amine hardener is used. (Asahi Kasei E-Materials Co., Ltd .: Novacure HX3941HP) 50 parts, liquid epoxy resin (Mitsubishi Chemical Co., Ltd .: EP828) 14 parts, phenoxy resin (Nippon Steel Chemical Co., Ltd .: YP50) 35 parts and 1 part of a silane coupling agent (manufactured by Shin-Etsu Chemical Co., Ltd .: KBE403) were mixed and dispersed to form a binder resin composition. The adhesive resin composition was applied to a first resin film 4 to a thickness of 5 μm on a non-stretch polypropylene film (manufactured by Toray Co., Ltd .: Torayfan NO3701J), and the second resin film 7 was This adhesive resin composition was applied to a non-stretched polypropylene film (manufactured by Toray Co., Ltd .: Torayfan NO3701J) so as to have a thickness of 15 μm, thereby producing a sheet-shaped thermosetting resin layer 5 or 8 formed on one side. Sexual resin film. In addition, a sample of the anisotropic conductive film 1 was prepared by using the first resin film 4 having a size of about 20 × 30 cm and about A4 size before stretching to transfer.
並且,藉由在於溝槽10中填充、排列有導電性粒子3之片材2,貼合第1樹脂膜4,而使導電性粒子3轉黏於第1樹脂膜4之樹脂層5。其次,使用縮放方式之延伸機,將第1樹脂膜4於130℃之烘箱中藉由在單軸方向上延伸200%而使之延伸。於延伸後,將第2樹脂膜7貼合於第1樹脂膜4之轉黏有導電性粒子3之樹脂層5側而製作異向性導電膜1之樣品。再者,於各實施例中,將粒子密度為20000個/mm2作為一標準而製作,但該粒子密度係為了比較成為轉印型之片材2之形狀或延伸之方向性等之影響以明確本發明之效果及特徵而設定者。因此,根據使用異向性導電膜1之對象,延伸率之最佳值不同,同樣地粒子密度之最佳值亦不同。 In addition, the first resin film 4 is bonded to the sheet 2 in which the conductive particles 3 are filled and arranged in the trench 10, so that the conductive particles 3 are transferred to the resin layer 5 of the first resin film 4. Next, the first resin film 4 was stretched in an oven at 130 ° C. by 200% in a uniaxial direction using an extension machine of a zoom method. After the stretching, the second resin film 7 was bonded to the resin layer 5 side of the first resin film 4 on which the conductive particles 3 were adhered, to prepare a sample of the anisotropic conductive film 1. Furthermore, in each example, a particle density of 20,000 particles / mm 2 was used as a standard. However, the particle density is used to compare the influence of the shape or extension direction of the transfer-type sheet 2 on Those who set the effects and characteristics of the present invention clearly. Therefore, depending on the object using the anisotropic conductive film 1, the optimal value of the elongation is different, and similarly, the optimal value of the particle density is also different.
並且,對各異向性導電膜1之樣品測定粒子密度、二連結粒子率、及粒子密度之偏差σ。又,使用各異向性導電膜1之樣品,製造將IC晶片之凸塊與配線板之電極端子連接而成之連接結構體樣品,並測定鄰接之電極端子間之短路發生率。 In addition, a sample of the anisotropic conductive film 1 was measured for a particle density, a two-connected particle ratio, and a deviation σ of the particle density. In addition, a sample of the anisotropic conductive film 1 was used to produce a connection structure sample obtained by connecting the bumps of the IC wafer and the electrode terminals of the wiring board, and the occurrence rate of short circuits between adjacent electrode terminals was measured.
於實施例1中,使用粒徑為3μm之導電性粒子3。又,片材2所形成之溝槽10具有於片材2之長度方向上連續之圖案(參照圖3A),剖面為矩形狀(參照圖4A),寬度W為3.0μm,深度D為3.0μm,溝槽之間隔S為5.0μm。 In Example 1, conductive particles 3 having a particle diameter of 3 μm were used. The grooves 10 formed by the sheet 2 have a continuous pattern in the longitudinal direction of the sheet 2 (see FIG. 3A), and have a rectangular cross-section (see FIG. 4A), a width W of 3.0 μm, and a depth D of 3.0 μm. The interval S between the grooves is 5.0 μm.
於實施例2中,將溝槽10之寬度W設為5.9μm,除此以外,設為與實施例1相同之條件。 In Example 2, the same conditions as those in Example 1 were set except that the width W of the trench 10 was set to 5.9 μm.
於實施例3中,將溝槽10之寬度W設為3.5μm,將深度D設為1.5μm,除此以外,設為與實施例1相同之條件。 In Example 3, the conditions W were the same as those in Example 1 except that the width W of the trench 10 was set to 3.5 μm and the depth D was set to 1.5 μm.
於實施例4中,將溝槽10之深度D設為4.5μm,除此以外,設為與實施例3相同之條件。 In Example 4, the same conditions as those in Example 3 were set except that the depth D of the trench 10 was set to 4.5 μm.
於實施例5中,將溝槽10之寬度W設為6.5μm,除此以外,設為與實施例1相同之條件。 In Example 5, the same conditions as those in Example 1 were set except that the width W of the trench 10 was set to 6.5 μm.
於實施例6中,將溝槽10之深度設為6.0μm,除此以外,設為與實施例3相同之條件。 In Example 6, the same conditions as in Example 3 were set except that the depth of trench 10 was set to 6.0 μm.
於實施例7中,使用粒徑為4.0μm之導電性粒子3(積水化學股份有限公司製造:AUL704)。又,將片材2所形成之溝槽10之寬度W設為4.0μm,將深度D設為4.0μm,除此以外,設為與實施例1相同之條件。 In Example 7, conductive particles 3 (manufactured by Sekisui Chemical Co., Ltd .: AUL704) having a particle diameter of 4.0 μm were used. The conditions W were the same as those in Example 1 except that the width W of the grooves 10 formed in the sheet 2 was 4.0 μm and the depth D was 4.0 μm.
於實施例8中,片材2所形成之溝槽10為剖面三角形狀(參照圖4J),寬度W為3.0μm,深度D為3.0μm,溝槽之間隔S為5.0μm。除此以外,將導電性粒子3或溝槽10之圖案之條件設為與實施例1相同之條件。 In Example 8, the grooves 10 formed by the sheet 2 are triangular in cross section (see FIG. 4J), the width W is 3.0 μm, the depth D is 3.0 μm, and the interval S between the grooves is 5.0 μm. Other than that, the conditions of the pattern of the conductive particles 3 or the grooves 10 are the same as those of the first embodiment.
於比較例1中,藉由先前之製法製作異向性導電膜。即,於上述實施例之黏合劑樹脂組成物中,分散對樹脂核心粒子鍍金而成之粒徑為3μm之導電性粒子3(積水化學股份有限公司製造:AUL703)5質量份,並將其以厚度成為20μm之方式塗佈於無延伸聚丙烯膜(東麗股份有限公司製造:Torayfan NO3701J),而製作於一面形成有樹脂層之片狀之熱硬化性樹脂膜。 In Comparative Example 1, an anisotropic conductive film was produced by the previous manufacturing method. That is, 5 parts by mass of conductive particles 3 (manufactured by Sekisui Chemical Co., Ltd .: AUL703) having a particle diameter of 3 μm formed by gold-plating resin core particles are dispersed in the binder resin composition of the above-mentioned embodiment, A thickness of 20 μm was applied to a non-stretched polypropylene film (manufactured by Toray Fan Co., Ltd .: Torayfan NO3701J), and a sheet-shaped thermosetting resin film with a resin layer formed on one side was produced.
經由實施例及比較例之異向性導電膜而連接之IC晶片之尺寸為1.4mm×20.0mm,厚度為0.2mm,金凸塊尺寸為17μm×100μm,凸塊高度為12μm,凸塊間隔為11μm。 The size of the IC chip connected via the anisotropic conductive film of the examples and comparative examples is 1.4mm × 20.0mm, thickness is 0.2mm, gold bump size is 17μm × 100μm, bump height is 12μm, and bump interval is 11 μm.
構裝該IC晶片之配線板係形成有與IC晶片之圖案對應之鋁配線圖案的玻璃基板(Corning公司製造:1737F),尺寸為50mm×30mm, 厚度為0.5mm。 The wiring board on which the IC wafer is mounted is a glass substrate (manufactured by Corning Corporation: 1737F) having an aluminum wiring pattern corresponding to the pattern of the IC wafer, and has a size of 50 mm × 30 mm and a thickness of 0.5 mm.
經由實施例及比較例之異向性導電膜連接IC晶片與玻璃基板之條件為170℃、80MPa、10秒。 The conditions for connecting the IC wafer and the glass substrate via the anisotropic conductive film of the examples and comparative examples were 170 ° C., 80 MPa, and 10 seconds.
實施例及比較例之異向性導電膜之粒子密度係使用顯微鏡測定1mm2中之導電性粒子3之數量。二連結粒子率係使用顯微鏡,於200μm×200μm=40000μm2之面積中對連結2個以上之導電性粒子3之數量進行計數,並算出平均之連結數。進而算出50μm×50μm=2500μm2之面積中之粒子密度之偏差σ。 The particle density of the anisotropic conductive film of Examples and Comparative Examples was measured using a microscope to measure the number of conductive particles 3 in 1 mm 2 . The ratio of two connected particles is calculated using an microscope, counting the number of connected two or more conductive particles 3 in an area of 200 μm × 200 μm = 40000 μm 2 , and calculating the average number of connected particles. Furthermore, the deviation σ of the particle density in an area of 50 μm × 50 μm = 2500 μm 2 was calculated.
又,測定連接結構體樣品之鄰接之電極端子間之短路發生率。 In addition, the occurrence rate of short circuit between adjacent electrode terminals of the connection structure sample was measured.
將上述實施例1至8、及比較例中之異向性導電膜之各測定結果匯總示於表1。 Table 1 shows the measurement results of the anisotropic conductive films in Examples 1 to 8 and Comparative Examples.
如表1所示,根據實施例1~8,由於預先將導電性粒子3以特定圖案排列於片材2,故而藉由使轉黏有其等之第1樹脂膜4單軸延 伸,可使導電性粒子3確實地分散。因此,於實施例1~8之異向性導電膜中,二連結粒子率成為9%以下。又,於實施例1~8之異向性導電膜中,導電性粒子3之密度未達20000個/mm2,粒子密度之偏差(σ)亦較小,為2以下,使用該等製造之連接結構體樣品之鄰接之電極端子間之短路發生率為0%。 As shown in Table 1, according to Examples 1 to 8, since the conductive particles 3 are arranged in a specific pattern on the sheet 2 in advance, the first resin film 4 which has been transferred and adhered thereto can be uniaxially extended to make The conductive particles 3 are reliably dispersed. Therefore, in the anisotropic conductive films of Examples 1 to 8, the ratio of the two connected particles was 9% or less. In the anisotropic conductive film of Examples 1 to 8, the density of the conductive particles 3 was less than 20,000 particles / mm 2 , and the deviation (σ) of the particle density was also small, which was 2 or less. The occurrence rate of short circuit between adjacent electrode terminals of the connection structure sample was 0%.
尤其於實施例1~4中,由於將片材2之溝槽10之寬度W設為導電性粒子3之粒徑之1倍~未達2倍,且將溝槽10之深度D設為導電性粒子3之粒徑之0.5~1.5倍,故而粒子密度亦較低,二連結粒子率亦成為5%以下。 In particular, in Examples 1 to 4, the width W of the grooves 10 of the sheet 2 is set to 1 to 2 times the particle diameter of the conductive particles 3, and the depth D of the grooves 10 is set to be conductive. The particle size of the sexual particles 3 is 0.5 to 1.5 times, so the particle density is also low, and the ratio of the secondary particles is also less than 5%.
另一方面,於使用先前之異向性導電膜之比較例1中,粒子密度為20000個/mm2,二連結粒子率亦增加為12%。又,比較例1之異向性導電膜之粒子密度偏差(σ)較高,為10.2,且鄰接之電極端子間之短路發生率成為2%。 On the other hand, in Comparative Example 1 using the conventional anisotropic conductive film, the particle density was 20,000 particles / mm 2 , and the ratio of the two-linked particles was also increased to 12%. Moreover, the particle density deviation (σ) of the anisotropic conductive film of Comparative Example 1 was high, being 10.2, and the short-circuit occurrence rate between adjacent electrode terminals was 2%.
又,就片材2之溝槽10之寬度W之影響來看,如實施例1所示,若片材2之溝槽10之寬度W相對於導電性粒子3之粒徑為等倍,則未見二連結粒子,但如實施例2及實施例5所示,隨著片材2之溝槽10之寬度W相對於導電性粒子3之粒徑自不足2倍變為超過2倍,二連結粒子率增加。認為該二連結粒子率增加之原因為:若片材2之溝槽10之寬度W變寬,則填充導電性粒子3所施加之應力會分散。由此可知,片材2之溝槽10之寬度W相對於導電性粒子3之粒徑較佳為未達2倍。 From the viewpoint of the influence of the width W of the grooves 10 of the sheet 2, as shown in Example 1, if the width W of the grooves 10 of the sheet 2 is equal to the particle diameter of the conductive particles 3, then No secondary particles were seen, but as shown in Examples 2 and 5, as the width W of the grooves 10 of the sheet 2 with respect to the particle diameter of the conductive particles 3 changed from less than 2 times to more than 2 times, The ratio of connected particles increases. It is considered that the reason why the ratio of the two connected particles increases is that when the width W of the grooves 10 of the sheet 2 becomes wider, the stress applied by the filled conductive particles 3 is dispersed. From this, it is understood that the width W of the grooves 10 of the sheet 2 is preferably less than twice the particle diameter of the conductive particles 3.
進而,就片材2之溝槽10之深度D之影響來看,由實施例3、實施例4、及實施例6可知,隨著片材2之溝槽10之深度D相對於導電性粒子3之粒徑變大為0.5倍、1.5倍、2倍,粒子密度及二連結粒子率亦顯示出增加傾向。尤其是由實施例3、實施例4可知,於片材2之溝槽10之深度D相對於導電性粒子3之粒徑為0.5~1.5倍之情形時,二連結粒子率 成為5%以下,因此對於維持異向性導電膜之導通可靠性較佳。 Furthermore, in terms of the effect of the depth D of the groove 10 of the sheet 2, it can be seen from Examples 3, 4, and 6 that the depth D of the groove 10 of the sheet 2 is relative to the conductive particles. The particle size of 3 becomes 0.5 times, 1.5 times, and 2 times, and the particle density and the ratio of secondary particles also increase. In particular, from Examples 3 and 4, it can be seen that when the depth D of the grooves 10 of the sheet 2 is 0.5 to 1.5 times the particle diameter of the conductive particles 3, the ratio of the second connection particles becomes 5% or less. Therefore, it is better to maintain the conduction reliability of the anisotropic conductive film.
<本發明之第1實施形態之實施例> <Example of the first embodiment of the present invention>
其次,對於使將下述實施例11至19中之第1樹脂膜4進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率,於與上述實施例1至8同樣之條件下進行測定。再者,於實施例11至13中,對片材2之溝槽10之寬度W之影響進行研究,於實施例14至16中,對片材2之溝槽10之深度D之影響進行研究,於實施例17至19中,對片材2之溝槽10之間隔即粒子列間距離S之影響進行研究。 Next, the particle densities when the elongation when the first resin film 4 in the following Examples 11 to 19 is uniaxially stretched to 150%, 200%, 300%, 450%, and 700%, The two-connected particle rate, the variation in particle density, and the short-circuit occurrence rate were measured under the same conditions as in Examples 1 to 8 described above. Furthermore, in Examples 11 to 13, the influence of the width W of the groove 10 of the sheet 2 was studied, and in Examples 14 to 16, the influence of the depth D of the groove 10 of the sheet 2 was studied. In Examples 17 to 19, the influence of the interval S between the grooves 10 of the sheet 2 and the distance S between the particle rows was studied.
於實施例11中,與上述實施例1同樣地使用粒徑為3μm之導電性粒子3。又,片材2所形成之溝槽10具有於片材2之長度方向上連續之圖案(參照圖3A),剖面為矩形狀(參照圖4A),寬度W為3.0μm,深度D為3.0μm,溝槽之間隔S為5.0μm。 In Example 11, as in Example 1, the conductive particles 3 having a particle diameter of 3 μm were used. The grooves 10 formed by the sheet 2 have a continuous pattern in the longitudinal direction of the sheet 2 (see FIG. 3A), and have a rectangular cross-section (see FIG. 4A), a width W of 3.0 μm, and a depth D of 3.0 μm. The interval S between the grooves is 5.0 μm.
於實施例12中,與上述實施例2同樣地將溝槽10之寬度W設為5.9μm,除此以外,設為與實施例1相同之條件。 In Example 12, the same conditions as in Example 1 were set except that the width W of the trench 10 was set to 5.9 μm in the same manner as in the above-mentioned Example 2.
於實施例13中,與上述實施例5同樣地將溝槽10之寬度W設為6.5μm,除此以外,設為與實施例1相同之條件。 In Example 13, the same conditions as in Example 1 were set except that the width W of the trench 10 was set to 6.5 μm in the same manner as in the above-mentioned Example 5.
於實施例14中,與上述實施例3同樣地將溝槽10之寬度W設為3.5μm,將深度D設為1.5μm,除此以外,設為與實施例1相同之條件。 In Example 14, the same conditions as in Example 1 were set except that the width W of the trench 10 was set to 3.5 μm and the depth D was set to 1.5 μm in the same manner as in the above-mentioned Example 3.
於實施例15中,與上述實施例4同樣地將溝槽10之深度D設為4.5μm,除此以外,設為與實施例3相同之條件。 In Example 15, the same conditions as in Example 3 were set except that the depth D of trench 10 was set to 4.5 μm in the same manner as in Example 4 above.
於實施例16中,與上述實施例6同樣地將溝槽10之深度D設為6.0μm,除此以外,設為與實施例3相同之條件。 In Example 16, the same conditions as in Example 3 were set except that the depth D of the trench 10 was set to 6.0 μm in the same manner as in the above-mentioned Example 6.
於實施例17中,將粒子列間距離S設為3.0μm,除此以外, 設為與實施例1相同之條件。 In Example 17, the conditions S were the same as those in Example 1 except that the distance S between the particle rows was set to 3.0 μm.
於實施例18中,將粒子列間距離S設為6.0μm,除此以外,設為與實施例1相同之條件。 In Example 18, the conditions S were the same as those in Example 1 except that the distance S between the particle rows was set to 6.0 μm.
於實施例19中,將粒子列間距離S設為10.5μm,除此以外,設為與實施例1相同之條件。 In Example 19, the conditions S were the same as those in Example 1 except that the distance S between the particle columns was set to 10.5 μm.
關於使將上述實施例11至19中之第1樹脂膜4進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率之測定結果,匯總示於表2。 Particle density and two-linked particles when the elongation of the first resin film 4 in Examples 11 to 19 is uniaxially stretched to 150%, 200%, 300%, 450%, and 700% Table 2 shows the measurement results of the rate, the variation in particle density, and the short-circuit occurrence rate.
如表2所示,根據實施例11至19,可確認粒子密度及二連結粒子率與延伸之程度(延伸率)成比例地降低。認為其原因為:由於預先將導電性粒子3以特定圖案排列於片材2,故而藉由使轉黏有該導電性粒 子3之第1樹脂膜4單軸延伸,會使導電性粒子3確實地分散。另一方面,根據實施例11至19,可確認粒子密度之偏差(σ)無論延伸率如何均獲得2以下之較小值。 As shown in Table 2, according to Examples 11 to 19, it was confirmed that the particle density and the ratio of the two-connected particles were reduced in proportion to the degree of elongation (elongation). The reason is considered to be that the conductive particles 3 are arranged on the sheet 2 in a specific pattern in advance, so that the first resin film 4 to which the conductive particles 3 are transferred is uniaxially stretched to make the conductive particles 3 sure地 scattered. On the other hand, according to Examples 11 to 19, it was confirmed that the deviation (σ) of the particle density obtained a small value of 2 or less regardless of the elongation.
又,根據實施例11至19,可確認短路發生率於延伸率為150%時,於任一實施例中均稍有發生,但於延伸率為200%以上之情形時,於任一實施例中均不發生,短路發生率為0%。認為其原因為:於延伸150%時,無法確保充分之導電性粒子間之距離,因此導電性粒子3之接觸機率提高。由此可知,於使轉黏有導電性粒子3之第1樹脂膜4單軸延伸時,較佳為以至少大於150%之延伸率即長於原始長度之150%之方式延伸。 In addition, according to Examples 11 to 19, it can be confirmed that the short-circuit occurrence rate occurs slightly in any of the examples when the elongation is 150%, but when the elongation is 200% or more, in any of the examples None of them occurred, and the short-circuit occurrence rate was 0%. The reason is considered to be that when the elongation is 150%, a sufficient distance between the conductive particles cannot be ensured, and therefore the contact probability of the conductive particles 3 increases. From this, it can be seen that, when the first resin film 4 to which the conductive particles 3 are transferred is uniaxially stretched, it is preferable to extend at a rate of at least greater than 150%, that is, longer than 150% of the original length.
進而,根據實施例11至19,可知粒子密度與片材2之溝槽10之模具之形狀無關,與延伸率成比例地降低。由該等結果亦可知,導電性粒子3之粒子間之空隙因延伸而產生,且依存於一方向。 Furthermore, from Examples 11 to 19, it can be seen that the particle density is irrelevant to the shape of the mold of the grooves 10 of the sheet 2 and decreases in proportion to the elongation. From these results, it can also be seen that the voids between the particles of the conductive particles 3 are generated by extension and depend on one direction.
又,就片材2之溝槽10之寬度W之影響來看,如實施例11所示,與片材2之溝槽10之寬度W相對於導電性粒子3之粒徑為等倍之情形相比,如實施例12及實施例13所示,若溝槽10之寬度W變寬,則粒子密度減小,二連結粒子率增加。再者,若溝槽10之寬度W變寬,則導電性粒子3變得容易轉黏於第1樹脂層5,導電性粒子3之轉印率本身變佳,因此關於粒子密度,實施例12與實施例13之相對差異縮小。又,若溝槽10之寬度W變寬,則導電性粒子3之排列之混亂增大,導致導電性粒子3之連結本身增加,因此二連結粒子率增加。 As for the influence of the width W of the grooves 10 of the sheet 2, as shown in Example 11, the width W of the grooves 10 of the sheet 2 is equal to the diameter of the conductive particles 3. In contrast, as shown in Examples 12 and 13, if the width W of the trench 10 becomes wider, the particle density decreases, and the ratio of the two connected particles increases. In addition, if the width W of the grooves 10 becomes wider, the conductive particles 3 become easier to stick to the first resin layer 5 and the transfer rate itself of the conductive particles 3 becomes better. Therefore, regarding the particle density, Example 12 The relative difference from Example 13 is reduced. Further, if the width W of the trench 10 becomes wider, the disorder of the arrangement of the conductive particles 3 increases, and the connection itself of the conductive particles 3 increases, so the ratio of the two connected particles increases.
進而,就片材2之溝槽10之深度D之影響來看,可知如實施例11所示,與片材2之溝槽10之深度D相對於導電性粒子3之粒徑為等倍之情形相比,如實施例12及實施例13所示,若溝槽10之深度D增大,則因第1樹脂層5之樹脂進入溝槽10之內部而使轉印率變佳,因此粒子密度提高。又,可知若溝槽10之深度D增大,則二連結粒子率與粒子密度成 比例地增加。進而,就延伸率為150%時之短路發生率來看,由實施例14可知,若片材2之溝槽10較淺則粒子之連結變強,因此短路發生率增大。 Furthermore, in terms of the effect of the depth D of the grooves 10 of the sheet 2, as shown in Example 11, it can be seen that the depth D of the grooves 10 of the sheet 2 is equal to the particle diameter of the conductive particles 3. Compared with the situation, as shown in Example 12 and Example 13, if the depth D of the groove 10 is increased, the resin of the first resin layer 5 enters the inside of the groove 10 and the transfer rate becomes better. Increased density. It was also found that when the depth D of the trench 10 is increased, the ratio of the two-connected particles increases in proportion to the particle density. Furthermore, from the viewpoint of the short-circuit occurrence rate when the elongation rate is 150%, it can be seen from Example 14 that if the grooves 10 of the sheet 2 are shallow, the connection of the particles becomes strong, so the short-circuit occurrence rate increases.
又,就片材2之粒子列間距離S之影響來看,可知如實施例17所示,與片材2之粒子列間距離S相對於導電性粒子3之粒徑為等倍之情形相比,如實施例18及實施例19所示,若粒子列間距離S變大,則粒子密度降低。又,由實施例17與實施例18可知,隨著片材2之粒子列間距離S增大,二連結粒子率增加,但由實施例19可知,若片材2之粒子列間距離S變為特定值以上,則於200%以上之延伸率時變得不會見到連結粒子。 From the viewpoint of the influence of the distance S between the particle rows of the sheet 2, as shown in Example 17, it can be seen that the distance S between the particle rows of the sheet 2 is equal to the particle diameter of the conductive particles 3 as shown in Example 17. As shown in Examples 18 and 19, as the distance S between the particle rows becomes larger, the particle density decreases. Furthermore, it can be seen from Examples 17 and 18 that as the distance S between the particle rows of the sheet 2 increases, the ratio of the two connected particles increases. However, it can be seen from Example 19 that if the distance S between the particle rows of the sheet 2 changes If it is a specific value or more, the connected particles will not be seen at an elongation of 200% or more.
<本發明之第2實施形態之實施例> <Example of the second embodiment of the present invention>
其次,針對使將下述實施例21至26及比較例21至23中之第1樹脂膜104進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率,於與上述實施例1至8相同之條件下進行測定。該等實施例21至26及比較例21至23中之第1樹脂膜104係藉由本發明之第2實施形態之異向性導電膜101之製造方法而製造者。又,於該等實施例21至26及比較例21至23中,均使用粒徑為3μm之導電性粒子103。再者,於實施例21至23中,對片材102之溝槽110之深度D之影響進行研究,於實施例24至26中,對導引體112之突起部112b之形狀等之影響進行研究。又,於比較例21至23中,驗證了即便對溝槽110之深度D與導電性粒子103之粒徑相同之片材102使用本發明之其他實施形態之導引體112,亦不會改善導電性粒子103之填充效率。 Next, the elongation at the time of uniaxial stretching of the first resin film 104 in Examples 21 to 26 and Comparative Examples 21 to 23 described below was adjusted to 150%, 200%, 300%, 450%, and 700%. In this case, the particle density, the two-link particle rate, the deviation of the particle density, and the short-circuit occurrence rate were measured under the same conditions as in Examples 1 to 8 described above. The first resin film 104 in Examples 21 to 26 and Comparative Examples 21 to 23 was manufactured by the method for manufacturing an anisotropic conductive film 101 according to the second embodiment of the present invention. In each of Examples 21 to 26 and Comparative Examples 21 to 23, conductive particles 103 having a particle diameter of 3 μm were used. Moreover, in Examples 21 to 23, the influence of the depth D of the grooves 110 of the sheet 102 was studied, and in Examples 24 to 26, the influence of the shape of the protrusion 112b of the guide body 112 and the like were performed. the study. Also, in Comparative Examples 21 to 23, it was verified that even when the sheet 102 having the same depth D as the groove 110 and the particle diameter of the conductive particles 103 is used, the guide body 112 according to another embodiment of the present invention will not be improved. Filling efficiency of the conductive particles 103.
於實施例21中,使用突起部112b之高度為2μm,突起間隔為3.5μm,刮板側間隙部112d之基端部之寬度W1為3.5μm,前端部之寬度W2為4.5μm之導引體112,及溝槽110之寬度W為3.5μm,深度D為1.0μm,溝槽之間隔S為3.0μm之片材102。 In Example 21, a guide body having a height of 2 μm of the protruding portions 112 b, a pitch of 3.5 μm, a width W1 of the base end portion of the blade-side gap portion 112 d of 3.5 μm, and a width W2 of the front end portion of 4.5 μm was used. 112, and the grooves 110 have a width W of 3.5 μm, a depth D of 1.0 μm, and a gap S of the sheet 102 of 3.0 μm.
於實施例22中,將溝槽110之深度D設為1.5μm,除此以外,設為與實施例21相同之條件。 In Example 22, the conditions D were the same as those in Example 21 except that the depth D of the trench 110 was set to 1.5 μm.
於實施例23中,將溝槽110之深度D設為2.0μm,除此以外,設為與實施例21相同之條件。 In Example 23, the conditions D were the same as those in Example 21 except that the depth D of the trench 110 was set to 2.0 μm.
於實施例24中,使用突起部112b之高度為1.5μm,突起間隔為3.5μm,導引體112之間隙部112d之基端部112d1之寬度W1為3.5μm,前端部112d2之寬度W2為4.5μm之導引體112,及溝槽110之寬度W為3.5μm,深度D為1.5μm,溝槽之間隔S為3.0μm之片材102。再者,所謂突起部112b之「高度」,係指自突起部112b之基端部112b1至前端部112b2之距離。 In Example 24, the height of the protruding portions 112b was 1.5 μm, the interval between the protrusions was 3.5 μm, the width W1 of the base end portion 112d1 of the gap portion 112d of the guide body 112 was 3.5 μm, and the width W2 of the front end portion 112d2 was 4.5. The guide body 112 of the μm and the grooves 110 have a width W of 3.5 μm, a depth D of 1.5 μm, and a gap 102 of the grooves S of 3.0 μm. The "height" of the protruding portion 112b refers to a distance from the base end portion 112b1 of the protruding portion 112b to the front end portion 112b2.
於實施例25中,將突起部112b之高度設為2.0μm,除此以外,設為與實施例24相同之條件。 In Example 25, the same conditions as in Example 24 were set except that the height of the protruding portion 112b was set to 2.0 μm.
於實施例26中,將突起部112b之高度設為2.5μm,除此以外,設為與實施例24相同之條件。 In Example 26, the same conditions as those in Example 24 were set except that the height of the protruding portion 112b was set to 2.5 μm.
於比較例21中,使用突起部112b之高度為2.0μm,突起間隔為3.0μm,間隙部112d之基端部112d1之寬度W1為3.0μm,前端部112d2之寬度W2為4.0μm之導引體112,及溝槽110之寬度W為3.0μm,深度D為3.0μm,溝槽110之間隔S為3.0μm之片材102。 In Comparative Example 21, a guide body having a protrusion portion 112b having a height of 2.0 μm, a protrusion interval of 3.0 μm, a width W1 of the base end portion 112d1 of the gap portion 112d, and a width W2 of the leading end portion 112d2 of 4.0 μm was used. 112, the sheet 102 having a width W of 3.0 μm, a depth D of 3.0 μm, and an interval S of the trenches 110 of 3.0 μm.
於比較例22中,使用突起部112b之高度為2.0μm,突起間隔為3.5μm,間隙部112d之基端部112d1之寬度W1為3.5μm,前端部112d2之寬度W2為4.5μm之導引體112,及溝槽110之寬度W為3.5μm,深度D為3.0μm,溝槽110之間隔S為3.0μm之片材102。 In Comparative Example 22, a guide body having a protrusion portion 112b having a height of 2.0 μm, a protrusion interval of 3.5 μm, a width W1 of the base portion 112d1 of the gap portion 112d, and a width W2 of the leading portion 112d2 of 4.5 μm was used. 112, and the grooves 110 have a width W of 3.5 μm, a depth D of 3.0 μm, and an interval S of the grooves 110 of the sheet 102.
於比較例23中,使用突起部112b之高度為2.0μm,突起間隔為4.5μm,間隙部112d之基端部112d1之寬度W1為4.5μm,前端部112d2之寬度W2為5.5μm之導引體112,及溝槽110之寬度W為4.5 μm,深度D為3.0μm,溝槽110之間隔S為3.0μm之片材102。 In Comparative Example 23, a guide body having a protrusion portion 112b having a height of 2.0 μm, a protrusion interval of 4.5 μm, a width W1 of the base end portion 112d1 of the gap portion 112d, and a width W2 of the tip portion 112d2 of 5.5 μm was used. 112, the sheet 102 having a width W of 4.5 μm, a depth D of 3.0 μm, and a gap S of the trench 110 of 3.0 μm.
針對使將上述實施例21至26及比較例21至23中之第1樹脂膜104進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率之測定結果,匯整示於表3。 When the uniaxial stretching of the first resin film 104 in Examples 21 to 26 and Comparative Examples 21 to 23 is performed to make the elongation to 150%, 200%, 300%, 450%, and 700% Table 3 shows the measurement results of the particle density, the ratio of the two connected particles, the deviation of the particle density, and the occurrence rate of short circuits.
如表3所示,根據實施例21至26,可確認粒子密度及二連結粒子率與延伸之程度(延伸率)成比例地降低。認為其原因為:由於預先將導電性粒子103以特定圖案排列於片材102,故而藉由使轉黏有該導電性粒子103之第1樹脂膜104單軸延伸,會使導電性粒子103確實地分散。 另一方面,根據實施例21至26,可確認粒子密度之偏差(σ)無論延伸率如何均獲得2以下之較小值。 As shown in Table 3, according to Examples 21 to 26, it was confirmed that the particle density and the ratio of the two-connected particles were reduced in proportion to the degree of elongation (elongation). The reason is considered to be that the conductive particles 103 are arranged in a specific pattern on the sheet 102 in advance, so that the first resin film 104 to which the conductive particles 103 are adhered is uniaxially extended to make the conductive particles 103 sure.地 scattered. On the other hand, from Examples 21 to 26, it was confirmed that the deviation (σ) of the particle density obtained a small value of 2 or less regardless of the elongation.
又,根據實施例21至26,可確認短路發生率於延伸率為150%時,於任一實施例中均稍有發生,但於延伸率為200%以上之情形時,於任一實施例中均不發生,短路發生率為0%。認為其原因為:於延伸150%時,無法確保充分之導電性粒子間之距離,因此導電性粒子103之接觸機率提高。由此可知,於使轉黏有導電性粒子103之第1樹脂膜104單軸延伸時,較佳為以至少大於150%之延伸率即長於原始長度之150%之方式延伸。 Also, according to Examples 21 to 26, it can be confirmed that the short-circuit occurrence rate occurs slightly in any of the examples when the elongation is 150%, but when the elongation is 200% or more, in any of the examples None of them occurred, and the short-circuit occurrence rate was 0%. The reason is considered to be that when the elongation is 150%, a sufficient distance between the conductive particles cannot be ensured, so the contact probability of the conductive particles 103 is increased. From this, it can be seen that, when the first resin film 104 to which the conductive particles 103 are transferred is uniaxially stretched, it is preferable to extend at a rate of at least greater than 150%, that is, longer than 150% of the original length.
進而,根據實施例21至26,可知無論片材102之溝槽110之模具之形狀如何,均與延伸率成比例地降低。由該等結果亦可知,導電性粒子103之粒子間之空隙因延伸而產生,且依存於一方向。 Furthermore, according to Examples 21 to 26, it can be seen that regardless of the shape of the mold of the groove 110 of the sheet 102, it decreases in proportion to the elongation. From these results, it can also be seen that the voids between the particles of the conductive particles 103 are generated by extension and depend on one direction.
又,就片材102之溝槽110之深度D之影響來看,如實施例21所示,與片材102之溝槽110之深度D相對於導電性粒子103之粒徑為1/3倍之情形相比,如實施例22及實施例23所示,若溝槽110之深度D增大,則粒子密度減小。認為其原因之一為:若溝槽110之深度D增大,則自導電性粒子103之填充至轉印時之導電性粒子103之移動自由度變小。再者,由於實施例21至23之任一者中溝槽110之深度D均小於導電性粒子103之粒徑,故而即便溝槽110之深度D增大,亦不會對二連結粒子率或粒子密度之偏差σ、及短路發生率之變動造成較大之影響。 In addition, as for the influence of the depth D of the groove 110 of the sheet 102, as shown in Example 21, the depth D of the groove 110 of the sheet 102 is 1/3 times the particle diameter of the conductive particles 103. In contrast, as shown in Examples 22 and 23, if the depth D of the trench 110 is increased, the particle density is reduced. One of the reasons is considered that when the depth D of the trench 110 is increased, the degree of freedom of movement of the conductive particles 103 from the filling of the conductive particles 103 to the transfer of the conductive particles 103 becomes small. Furthermore, since the depth D of the trench 110 in any of Examples 21 to 23 is smaller than the particle diameter of the conductive particles 103, even if the depth D of the trench 110 is increased, the ratio of the two connected particles or particles will not be affected. The difference in density σ and the change in the occurrence rate of short circuits have a greater impact.
進而,就導引體112之突起部112b之形狀等之影響來看,根據實施例24至26,隨著突起部112b之高度增大,粒子密度增加,二連結粒子率減小。認為其原因為:若導引體112之突起部112b之高度增大,則會對導電性粒子103施加多餘之應力。因此,如實施例25所示,較佳為將導引體112之突起部112b之高度設為導電性粒子103之直徑之2/3左右。 Furthermore, in terms of the influence of the shape and the like of the protruding portion 112b of the guide body 112, according to Examples 24 to 26, as the height of the protruding portion 112b increased, the particle density increased, and the ratio of the two connected particles decreased. The reason is considered to be that if the height of the protrusion 112 b of the guide body 112 is increased, an excessive stress is applied to the conductive particles 103. Therefore, as shown in Example 25, it is preferable to set the height of the protrusion 112b of the guide body 112 to about 2/3 of the diameter of the conductive particles 103.
另一方面,於使用利用溝槽110之深度D與導電性粒子103 之粒徑相同之片材製造而成之先前之異向性導電膜的比較例21至23中,雖然粒子密度略微減小,但即便進行200%以上之延伸,亦可見二連結粒子或短路之發生。認為其原因為:即便對溝槽110之深度D與導電性粒子103之粒徑相同之片材102使用本發明之第2實施形態之導引體112,亦因溝槽110較深,故而無法藉由導引體112去除多餘之導電性粒子103,因此無法改善對片材102之溝槽110之填充效率。 On the other hand, in Comparative Examples 21 to 23 of the previous anisotropic conductive films manufactured using a sheet having the same depth D as the groove 110 and the particle diameter of the conductive particles 103, the particle density was slightly reduced. However, even if the extension is more than 200%, it can be seen that two connected particles or short circuits occur. The reason is considered to be that, even if the guide body 112 of the second embodiment of the present invention is used for the sheet material 102 having the same depth D as that of the conductive particles 103, the grooves 110 are too deep and therefore cannot be used. Since the excess conductive particles 103 are removed by the guide body 112, the filling efficiency of the grooves 110 of the sheet 102 cannot be improved.
<本發明之第3實施形態之實施例> <Example of the third embodiment of the present invention>
其次,針對使將下述實施例31至39中之第1樹脂膜204進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率,於與上述實施例1至8相同之條件下進行測定。該等實施例31至39中之第1樹脂膜204係於設置有電極220之片材202填充導電性粒子203後進行製造而成者。又,於該等實施例31至39中,均使用粒徑為3μm之導電性粒子203。再者,於實施例31至33中,對構成片材202之溝槽210之電極220之大小即溝槽210之寬度W之影響進行研究,於實施例34至36中,對電極220之寬度即粒子列203a之列間距離S之影響進行研究,於實施例37至39中,對電極220之厚度即溝槽210之深度D之影響進行研究。 Next, the particle density when the elongation when the first resin film 204 in the following Examples 31 to 39 is uniaxially stretched to 150%, 200%, 300%, 450%, and 700%, The two-connected particle rate, the variation in particle density, and the short-circuit occurrence rate were measured under the same conditions as in Examples 1 to 8 described above. The first resin film 204 in the examples 31 to 39 is manufactured by filling the sheet 202 provided with the electrode 220 with the conductive particles 203 and filling it. In each of Examples 31 to 39, conductive particles 203 having a particle diameter of 3 μm were used. In addition, in Examples 31 to 33, the influence of the size of the electrode 220 constituting the groove 210 of the sheet 202, that is, the width W of the groove 210 is studied. In Examples 34 to 36, the width of the counter electrode 220 That is, the influence of the distance S between the particle rows 203a is studied. In Examples 37 to 39, the influence of the thickness of the electrode 220, that is, the depth D of the trench 210 is studied.
於實施例31中,使用將電極220之剖面設為邊長3.0μm之正方形之情形即溝槽210之寬度W及深度D為3.0μm、溝槽210之間隔S為3.0μm之片材202。 In Example 31, a sheet 202 in which the cross section of the electrode 220 is a square with a side length of 3.0 μm, that is, the width W and depth D of the trench 210 is 3.0 μm, and the interval S of the trench 210 is 3.0 μm.
於實施例32中,使用將電極220之剖面設為邊長3.5μm之正方形之情形即溝槽210之寬度W及深度D為3.5μm、溝槽210之間隔S為3.5μm之片材202。 In Example 32, a sheet 202 in which the cross section of the electrode 220 is a square with a side length of 3.5 μm, that is, the width W and depth D of the trench 210 is 3.5 μm, and the interval S of the trench 210 is 3.5 μm.
於實施例33中,使用將電極220之剖面設為邊長4.5μm之正方形之情形即溝槽210之寬度W及深度D為4.5μm、溝槽210之間隔S 為4.5μm之片材202。 In Example 33, a sheet 202 in which the cross section of the electrode 220 is a square with a side length of 4.5 μm, that is, the width W and depth D of the trench 210 is 4.5 μm, and the interval S of the trench 210 is 4.5 μm.
於實施例34中,使用將溝槽210之剖面設為邊長3.5μm之正方形,溝槽210之間隔S為3.0μm之片材202。 In Example 34, a sheet 202 having a cross section of the trench 210 having a side length of 3.5 μm and a spacing S of the trench 210 of 3.0 μm was used.
於實施例35中,使用將溝槽210之剖面設為邊長3.5μm之正方形,溝槽210之間隔S為3.2μm之片材202。 In Example 35, a sheet 202 having a cross section of the trench 210 having a side length of 3.5 μm and a spacing S of the trench 210 of 3.2 μm was used.
於實施例36中,使用將溝槽210之剖面設為邊長3.5μm之正方形,溝槽210之間隔S為4.5μm之片材202。 In Example 36, a sheet 202 having a cross section of the trench 210 having a side length of 3.5 μm and a spacing S of the trench 210 of 4.5 μm was used.
於實施例37中,使用溝槽210之寬度W為3.5μm,深度D為3.0μm,溝槽210之間隔S為3.5μm之片材202。 In Example 37, a sheet 202 having a width W of the trench 210 of 3.5 μm, a depth D of 3.0 μm, and an interval S of the trench 210 of 3.5 μm was used.
於實施例38中,使用溝槽210之寬度W為3.5μm,深度D為3.2μm,溝槽210之間隔S為3.5μm之片材202。 In Example 38, a sheet 202 having a width W of 3.5 μm, a depth D of 3.2 μm, and a distance S between the trenches 210 of 3.5 μm was used.
於實施例39中,使用溝槽210之寬度W為3.5μm,深度D為4.5μm,溝槽210之間隔S為3.5μm之片材202。 In Example 39, a sheet 202 having a width W of 3.5 μm, a depth D of 4.5 μm, and a distance S between the trenches 210 of 3.5 μm was used.
針對使將上述實施例31至39中之第1樹脂膜204進行單軸延伸時之延伸率變為150%、200%、300%、450%、700%之情形時之粒子密度、二連結粒子率、粒子密度之偏差、及短路發生率之測定結果,匯整示於表4。 Particle density and two-linked particles when the elongation of the first resin film 204 in Examples 31 to 39 is uniaxially stretched to 150%, 200%, 300%, 450%, and 700% Table 4 shows the measurement results of the rate, the variation in particle density, and the short-circuit occurrence rate.
如表4所示,根據實施例31至39,可確認粒子密度及二連結粒子率與延伸之程度(延伸率)成比例地降低。認為其原因為:由於預先將導電性粒子203以特定圖案排列於片材202,故而藉由使轉黏有該導電性粒子203之第1樹脂膜204單軸延伸,會使導電性粒子203確實地分散。又,於實施例31至39中,藉由於向片材202之溝槽210填充導電性粒子203時進行利用磁力之填充,不會對導電性粒子203施加多餘之應力,認為其亦為二連結粒子之發生減少之原因。另一方面,根據實施例31至39,可確認粒子密度之偏差(σ)無論延伸率如何均獲得2以下之較小值。 As shown in Table 4, according to Examples 31 to 39, it was confirmed that the particle density and the ratio of the two-connected particles were decreased in proportion to the degree of elongation (elongation). The reason is considered to be that the conductive particles 203 are arranged in a specific pattern on the sheet 202 in advance, so that the first resin film 204 to which the conductive particles 203 are transferred is uniaxially extended to make the conductive particles 203 sure.地 scattered. Moreover, in Examples 31 to 39, since the conductive particles 203 were filled in the grooves 210 of the sheet 202 with magnetic force, unnecessary stress was not applied to the conductive particles 203, and it was considered to be a two-junction. Reasons for the reduction in particle occurrence. On the other hand, according to Examples 31 to 39, it was confirmed that the deviation (σ) of the particle density obtained a small value of 2 or less regardless of the elongation.
又,根據實施例31至39,可確認短路發生率於延伸率為150%時,於任一實施例中均稍有發生,但於延伸率為200%以上時,於任一實施例中均不發生,短路發生率為0%。認為其原因為:於延伸150%時, 無法確保充分之導電性粒子間之距離,因此導電性粒子203之接觸機率提高。由此可知,於使轉黏有導電性粒子203之第1樹脂膜204單軸延伸時,較佳為以至少大於150%之延伸率即長於原始長度之150%之方式延伸。 Also, according to Examples 31 to 39, it can be confirmed that the short-circuit occurrence rate slightly occurred in any of the examples when the elongation was 150%, but when the elongation was 200% or more, it was the same in any of the examples. It does not occur, and the short-circuit occurrence rate is 0%. The reason is considered to be that when the elongation is 150%, a sufficient distance between the conductive particles cannot be ensured, and therefore the contact probability of the conductive particles 203 increases. From this, it can be known that, when the first resin film 204 to which the conductive particles 203 are transferred is uniaxially stretched, it is preferable to extend at a rate of at least greater than 150%, that is, longer than 150% of the original length.
進而,根據實施例31至39,可知粒子密度無論片材202之溝槽210之模具之形狀如何,均與延伸率成比例地降低。由該等結果亦可知,導電性粒子203之粒子間之空隙因延伸而產生,且依存於一方向。 Furthermore, according to Examples 31 to 39, it can be seen that the particle density is reduced in proportion to the elongation regardless of the shape of the mold of the groove 210 of the sheet 202. From these results, it can also be seen that the voids between the particles of the conductive particles 203 are generated by extension, and depend on one direction.
由此可知,於使轉黏有導電性粒子203之第1樹脂膜204單軸延伸時,較佳為以至少大於150%之延伸率即長於原始長度之150%之方式延伸。再者,於實施例31及實施例34之延伸200%之情形時,粒子密度與其以外之情形相比增大,認為其原因為:於溝槽210之間隔S與導電性粒子203相同之情形時,依然存在導電性粒子203之接觸之可能性。 From this, it can be known that, when the first resin film 204 to which the conductive particles 203 are transferred is uniaxially stretched, it is preferable to extend at a rate of at least greater than 150%, that is, longer than 150% of the original length. Furthermore, in the case where the elongation of Example 31 and Example 34 is 200%, the particle density is increased compared to the other cases. The reason is considered to be that the interval S in the trench 210 is the same as the conductive particle 203 In this case, there is still a possibility of contact between the conductive particles 203.
又,就電極220之大小,即溝槽210之寬度W之影響來看,可知隨著電極220之剖面增大,粒子密度減小。又,根據實施例31,即便延伸200%,亦可見二連結粒子之產生。認為其於電極220之剖面與導電性粒子203相同之情形時,會對轉印產生影響。由此可知,溝槽210之寬度W較佳為至少大於導電性粒子203之直徑。 From the perspective of the size of the electrode 220, that is, the width W of the trench 210, it can be seen that the particle density decreases as the cross section of the electrode 220 increases. In addition, according to Example 31, even if the elongation is 200%, generation of two connected particles can be seen. It is considered that when the cross section of the electrode 220 is the same as that of the conductive particles 203, the transfer may be affected. From this, it can be seen that the width W of the trench 210 is preferably at least larger than the diameter of the conductive particles 203.
進而,就電極220之寬度即粒子列203a之列間距離S之影響來看,由實施例32、及實施例34至36可知,隨著粒子列203a之列間距離S變大,粒子密度、二連結粒子率均減少。由此可知,粒子列203a之列間距離S較佳為至少大於導電性粒子203之直徑。 Furthermore, in view of the influence of the width of the electrode 220, that is, the distance S between the particle rows 203a, it can be seen from Examples 32 and 34 to 36 that as the distance S between the particle rows 203a becomes larger, the particle density, The ratio of the two connected particles is reduced. From this, it is understood that the distance S between the particle rows 203 a is preferably at least larger than the diameter of the conductive particles 203.
又,就電極220之厚度即溝槽210之深度D之影響來看,由實施例32、及實施例37至39可知,隨著電極220之厚度即溝槽210之深度D增大,粒子密度增加。認為其原因為:若溝槽210變深,則第1樹脂層205之樹脂會進入溝槽210之內部,因此轉印率變佳。又,如上所述,可知於溝槽210之深度D與導電性粒子203之直徑同等程度之情形時,於將導 電性粒子203填充於溝槽210中之後利用刮板212去除時,損傷導電性粒子203之表面之程度變大,因此溝槽210之深度D較佳為至少大於導電性粒子203之直徑。 In addition, in view of the influence of the thickness of the electrode 220, that is, the depth D of the trench 210, it can be seen from Examples 32 and 37 to 39 that as the thickness of the electrode 220, that is, the depth D of the trench 210 increases, the particle density increase. The reason is considered to be that if the groove 210 becomes deeper, the resin of the first resin layer 205 enters the inside of the groove 210, and therefore the transfer rate becomes better. In addition, as described above, when the depth D of the trench 210 is the same as the diameter of the conductive particles 203, when the conductive particles 203 are filled in the trench 210 and removed by the scraper 212, the conductivity is damaged. The degree of the surface of the particles 203 becomes larger, and therefore the depth D of the groove 210 is preferably at least larger than the diameter of the conductive particles 203.
Claims (7)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
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JP2012171331 | 2012-08-01 | ||
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JP2013160118A JP6169916B2 (en) | 2012-08-01 | 2013-08-01 | Anisotropic conductive film manufacturing method, anisotropic conductive film, and connection structure |
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