TW201810641A - Low reflection metal structure, display panel and manufacturing method thereof - Google Patents

Abstract

A method for manufacturing a low reflection metal structure includes the following steps. A low reflection layer may be formed on the top and/or the bottom surface(s) of a metal layer, wherein the low reflection layer includes a metal oxide layer or a metal oxynitride layer. The low reflection layer and the metal layer are patterned simultaneously to form a patterned low reflection layer and a patterned metal layer.

Description

Low reflection metal structure, display panel and manufacturing method thereof

The invention relates to a low-reflection metal structure and a manufacturing method thereof, in particular to a display panel having a low-reflection metal structure and a manufacturing method thereof.

The liquid crystal display panel has become a mainstream commodity of current displays due to its characteristics of light and thin appearance, low power consumption, and wide application range. Because the metal structure in the liquid crystal display panel, such as a wire, reflects external light, causing the user to see the internal wires of the liquid crystal display panel when using the liquid crystal display panel, a common practice is to set a black matrix layer in the liquid crystal display panel. To prevent the situation where the wire reflects external light. However, the arrangement of the black matrix layer will cause the aperture ratio of the liquid crystal display panel to decrease, resulting in a decrease in display brightness.

An object of the present invention is to provide a low-reflection metal structure, a display panel, and a manufacturing method thereof, so as to reduce the visibility of the metal structure and improve the aperture ratio of the display panel.

To achieve the above object, the present invention provides a method for manufacturing a low reflection metal structure. First, a first substrate is provided. Then, a metal layer is formed on the first substrate. Then, a low reflection layer is formed on and / or under the metal layer, wherein the low reflection layer includes a metal oxide layer or a metal oxynitride layer. Subsequently, a patterning process is performed on the low reflection layer and the metal layer to form a patterned low reflection layer and a patterned metal layer.

To achieve the above object, the present invention further provides a method for manufacturing a display panel. First, the above-mentioned method for manufacturing a low reflection metal structure is performed. Then, a plurality of pixel structures are formed on the first substrate. Next, a second substrate is formed on the first substrate. Subsequently, a display medium layer is formed between the first substrate and the second substrate.

To achieve the above object, the present invention further provides a low-reflection metal structure, which includes a first substrate, a patterned metal layer, and a patterned low-reflection layer. The patterned metal layer is disposed on the first substrate. The patterned low reflection layer is disposed on and / or under the patterned metal layer.

To achieve the above object, the present invention further provides a display panel including the above-mentioned low reflection metal structure, a plurality of pixel structures, a second substrate, and a display medium layer. A plurality of pixel structures are disposed on the first substrate. The second substrate is disposed on the first substrate. The display medium layer is disposed between the first substrate and the second substrate.

The low-reflection metal structure, display panel and manufacturing method of the present invention provide a patterned low-reflection layer on and / or under the patterned metal layer, so that the patterned metal layer is shielded to reduce reflection of external light, thereby replacing the conventional black Matrix layer. Because the display panel and the manufacturing method of the present invention do not need to provide a black matrix layer, compared with the conventional display panel, the aperture ratio of the display panel can be effectively improved and a mask process can be reduced at the same time, thereby reducing the complexity of the process and Process costs.

In order to make those who have ordinary knowledge in the technical field to which the present invention pertains to further understand the present invention, the preferred embodiments of the present invention will be given in the following, and in conjunction with the accompanying drawings, the constitutional content of the present invention and the desired effects will be described in detail. .

Please refer to FIGS. 1 to 4, which are schematic diagrams of a method for manufacturing a low reflection metal structure according to a first embodiment of the present invention. As shown in FIG. 1, first, a first substrate S1 is provided. The material of the first substrate S1 may be plastic, glass, or other suitable materials. Next, as shown in FIG. 2, a metal layer 10 is formed on the first substrate S1. The metal layer 10 is preferably formed of a material with better conductivity, such as a metal material. For example, the metal material may include aluminum and copper , At least one of silver, titanium, molybdenum, tantalum, niobium, or neodymium, a metal composite layer of the above materials, an alloy of the above materials, or other suitable metal conductive materials. In this embodiment, the metal layer 10 is a single-layer metal layer, but the invention is not limited thereto. The metal layer 10 may also be a stacked structure of a metal material, or a stacked structure of other materials and a metal material. Then, as shown in FIG. 3, a low reflection layer 20 is formed on the metal layer 10, wherein the low reflection layer 20 includes a metal oxide layer or a metal oxynitride layer. Subsequently, as shown in FIG. 4, a patterning process is performed on the low reflection layer 20 and the metal layer 10 to form a patterned low reflection layer 22 and a patterned metal layer 12. Precisely, the patterned low-reflection layer 22 can selectively form and cover the top surface 12U of the patterned metal layer 12, but does not cover the side surface of the patterned metal layer 12, but the present invention is not limited to this, and is implemented in variations. In the example, the patterned low-reflection layer 22 can also be formed on the bottom surface 12L of the patterned metal layer 12 (the patterned low-reflection layer 22 disposed under the bottom surface 12L of the patterned metal layer 12 is not shown in FIG. 4). Or, the top surface 12U and the bottom surface 12L of the patterned metal layer 12 are covered with the patterned low reflection layer 22.

Specifically, the step of forming the low reflection layer 20 on the metal layer 10 includes performing a physical vapor deposition (Physical Vapor Deposition (PVD)) process, including reactive sputtering and non-reactive sputtering. sputtering). When the plasma bombards the target, a specific reaction gas is passed into the reaction chamber, so that the reaction gas and the target chemically react to form a low-reflection layer 20 covering the metal layer 10. When the reaction gas is oxygen, the low-reflection layer 20 of the metal oxide layer is formed. When the reaction gas is a mixed gas of nitrogen and oxygen, the low-reflection layer of the metal oxynitride layer is formed. 20. The metal material in the metal oxide layer or the metal oxynitride layer may include at least one of tantalum, silver, titanium, molybdenum, zinc, or niobium, an alloy of the foregoing materials, or other suitable metal materials. For example, the metal oxide layer may include a molybdenum oxide layer or a molybdenum tantalum oxide layer, and the content of oxygen in the metal oxide layer is between 5% and 50%, but the invention is not limited thereto. The metal oxynitride layer may include a molybdenum oxynitride layer or a molybdenum tantalum oxynitride layer. The atomic percent content of oxygen in the metal oxynitride layer is between 5% and 50%. The nitrogen content in the oxide layer is between 1% and 10%, but the invention is not limited thereto. In addition, since the low reflection layer 20 can be formed by a physical vapor deposition process, the structure of the low reflection layer 20 may be an amorphous phase structure in addition to a crystalline phase. Compared with the crystalline phase, the low-reflection layer 20 of the amorphous phase has a homogeneous structure and a better durability, which can prevent the metal layer 10 below it from oxidizing and make the metal layer 10 and the low-reflection layer 20 are not easy to be damaged in subsequent processes and cause their properties to change.

Please continue to refer to FIG. 4, an angle θ is formed between the side surface 12S and the bottom surface 12L of the patterned metal layer 12, and the included angle θ is between 10 degrees and 80 degrees. When the included angle θ is larger, the side surface 12S of the patterned metal layer 12 is steeper. Therefore, in the observation direction of the vertical projection, it is easier to observe the light reflected by the patterned metal layer 12 and the side surface 12S, which makes the user The patterned metal layer 12 inside the display panel cannot be detected, and a good light shielding effect is achieved. Further, since the patterned low-reflection layer 22 is generated after the low-reflection layer 20 and the metal layer 10 are simultaneously subjected to a patterning process, the size of the included angle θ can be adjusted by the patterned process. For example, the included angle θ The thickness of the patterned metal layer 12 can be changed. Compared with the patterned low-reflection layer produced by the heating process, the patterned low-reflection layer is formed after the metal layer is subjected to the patterning process, so the patterned low-reflection layer cannot adjust the pattern during the formation thereof. The angle of the included angle of the metal layer is changed, and the low-reflection layer 20 and the metal layer 10 of the present invention are subjected to a patterning process at the same time. Therefore, the size of the included angle θ can be adjusted by changing the thickness of the low-reflection layer 20 and the metal layer 10. Make the low-reflection metal structure meet the specifications required for subsequent processes. In addition, compared with the conventional technology, the low-reflection metal structure of the present invention can be formed in a single patterning process. Therefore, the method of manufacturing the low-reflection metal structure of the present invention has the effect of reducing process complexity and process cost.

In addition, the patterned low reflection layer 22 is obtained after the low reflection layer 20 is subjected to a patterning process. Therefore, the patterned low reflection layer 22 includes a metal oxide layer or a metal oxynitride layer, wherein the metal oxide layer and the metal oxynitride layer Each layer has a good low reflection effect. For example, the atomic percent of the oxygen content in the metal oxide layer is between 5% and 50%, but the invention is not limited thereto. The content of oxygen in the metal oxynitride layer is between 5% and 50%, and the content of nitrogen in the metal oxynitride layer is between 1% and 10%, but the invention is not limited thereto. Further, appropriately controlling the oxygen content in the metal oxide layer or the metal oxynitride layer and adjusting the angle θ can make the patterned low-reflection layer 22 have a better low reflection effect, so the patterned metal layer 12 will It can shield and reduce the reflection of external light, so it can replace the conventional method of setting a black matrix layer.

In the following, the display panels and manufacturing methods of other embodiments of the present invention will be introduced in order. In order to facilitate the comparison of the differences between the embodiments and simplify the description, the same components are labeled with the same symbols in the following embodiments. The differences between the embodiments are mainly described, and the repeated parts are not described again.

Please refer to Figure 5. FIG. 5 is a schematic cross-sectional view of a low reflection metal structure according to a second embodiment of the present invention. As shown in FIG. 5, this embodiment is different from the first embodiment in that in this embodiment, the patterned metal layer 12 has a stacked structure, including a bottom metal layer 12B and a top metal layer 12T on the bottom metal. On the layer 12B, the top metal layer 12T is preferably formed of a material with better conductivity, such as a metal material. The metal material may include at least one of aluminum, copper, silver, titanium, molybdenum, tantalum, niobium, or neodymium. Alloys of materials or other suitable metallic conductive materials. The bottom metal layer 12B is preferably a metal material that helps to attach the top metal layer 12T to the first substrate S1. The above metal material may include at least one of aluminum, silver, titanium, molybdenum, tantalum, niobium, or neodymium, Alloys of the above materials or other suitable metallic materials. For example, the top metal layer 12T may be copper (Cu), aluminum (Al), or aluminum neodymium alloy (AlNd), and the bottom metal layer 12B may be molybdenum (Mo) to increase the adhesion of the top metal layer 12T. The invention is not limited to this. In addition, the thickness D1 of the bottom metal layer 12B is between 50 Angstroms (Å) to 500 Angstroms (Å), and the thickness D2 of the top metal layer 12T is between 1000 Angstroms (Å) to 9000 Angstroms (Å). However, the present invention is not limited to this. The thickness D3 of the patterned low-reflection layer 22 is between 50 Angstroms (Å) to 500 Angstroms (Å). However, the present invention is not limited to this, and may be based on design requirements. Change its thickness. In addition, the reflectance of the patterned low-reflection layer 22 varies with its thickness. When the thickness D3 of the patterned low-reflection layer 22 is between 50 Angstroms (Å) to 500 Angstroms (Å), the patterned low-reflection layer 22 is patterned. The reflectivity (under visible light) can be between 2% and 20%, so the patterned low reflection layer 22 can effectively absorb light and reduce the reflection effect of the patterned metal layer 12, so the patterned low reflection layer 22 can As a light-shielding pattern layer, the black matrix layer is further replaced.

Please refer to FIG. 6, which is a schematic cross-sectional view of a low reflection metal structure according to a third embodiment of the present invention. As shown in FIG. 6, the difference between this embodiment and the second embodiment is that when the low-reflection layer 20 is formed on the metal layer 10, the oxygen flow rate can be adjusted simultaneously while the metal layer 10 and the low-reflection layer are simultaneously adjusted. The reflective layers 20 react to generate a very thin interlayer 14 by themselves. Then, the patterning process is used to pattern the metal layer 10, the low-reflection layer 20, and the interface layer 14 to form a patterned metal. Layer 12, a patterned low reflection layer 22, and a patterned interface layer 14. The material of the interface layer 14 may include a metal oxide or a metal oxynitride, and the metal material in the metal oxide layer or the metal oxynitride layer may include at least one of tantalum, molybdenum, niobium, indium, tin, zinc, or gallium. Or its alloy, or other suitable metal materials, but the invention is not limited thereto. For example, the metal oxide layer may include an indium tin oxide layer (ITO) or an indium gallium zinc oxide layer (IGZO). The presence of the interface layer 14 helps to absorb light, so the reflection effect of the patterned metal layer 12 can be further reduced. Therefore, the patterned low reflection layer 22 can exert a better light shielding effect and further replace the black matrix layer.

In addition, between the low-reflection layer 20 and the metal layer 10, a multilayer structure (not shown) formed by stacking a metal oxide or a metal oxynitride can be formed to further reduce the reflection of the patterned metal layer 12. The effect of the rate. For example, after the metal layer 10 is formed, another metal oxide layer or metal oxynitride layer or a multilayer structure (not shown) formed by stacking the metal oxide or metal oxynitride on the metal may be deposited on the metal. Layer 10, and then continue to form a low reflection layer 20 on the metal oxide layer or metal oxynitride layer, and then use the patterning process to combine the metal layer 10, low reflection layer 20, metal oxide layer, or metal nitrogen The oxide layer and the interface layer 14 are patterned. Since the multilayer structure formed by stacking metal oxides or metal oxynitrides has the same effect of reducing the reflection of the patterned metal layer 12 as the interface layer 14, the reflection of the patterned metal layer 12 can be further reduced, so that the patterning can be performed. The low-reflection layer 22 exerts a better light shielding effect and further replaces the black matrix layer.

Please refer to FIG. 7A, which is a schematic cross-sectional view of a low reflection metal structure according to a fourth embodiment of the present invention. The difference between this embodiment and the third embodiment is that, in this embodiment, a low-reflection layer 20 ′ is formed under the metal layer 10, that is, a low-reflection layer 20 ′ is formed before the metal layer 10 is formed. When the reflective layer 20 'is used, the low-reflective layer 20' and the first substrate S1 can react to generate a very thin interface layer 14 'by selectively controlling the flow of oxygen. Then, a patterning process is used. The metal layer 10, the low reflection layer 20 ', and the interface layer 14' are patterned to form a patterned metal layer 12, a patterned low reflection layer 22 ', and a patterned interface layer 14', as shown in FIG. 7A. . The material of the patterned low-reflection layer 22 'is preferably the same as the material of the patterned low-reflection layer 22, and the material of the interface layer 14' is preferably the same as the material of the interface layer 14, but the invention is not limited thereto. In a modified embodiment, when the low-reflection layer 20 'is formed under the metal layer 10, an interface layer may not be selectively formed between the metal layer 10 and the low-reflection layer 20'. In another modified embodiment, the present invention can form the low-reflection layer 20 'before forming the metal layer 10, and when forming the low-reflection layer 20', the low-reflection layer can be selectively adjusted by adjusting the flow rate of oxygen. 20 'and the first substrate S1 react with each other to form a very thin interface layer 14, as shown in FIG. 7C.

Please refer to FIGS. 7B to 7G. FIG. 7B is a transmission electron microscopy (TEM) image without the interface layer 14 between the metal layer 10 and the first substrate S1, and FIG. 7C is a metal layer A transmission electron microscope image of the interface layer 14 with the interface layer 14 between 10 and the first substrate S1. Figures 7D and 7E are black images displayed on the display of the structure shown in Figure 7B and Figure 7C, respectively. Color, Figure 7F is the relationship between the structure shown in Figure 7B and the reflectance at different wavelengths (visible light band), and Figure 7G is the structure shown in Figure 7C at different wavelengths (visible light band) and reflectance Diagram. Comparing Figure 7D and Figure 7E, it can be found that if there is no interface layer 14 in the structure (such as the structure shown in Figure 7B), a good light shielding effect cannot be achieved, so the image displayed when the screen is black will be reddish (such as (Figure 7D), and the black color shown in Figure 7E cannot be displayed. In addition, from the results of Figures 7F and 7G, it can be seen that if there is an interface layer 14 (such as the structure shown in Figure 7C), the reflectance in the long-wavelength range (for example, about 600 nm or more) will be less than the interface. The layer 14 (structure shown in FIG. 7B) is low, so it has a better light shielding effect.

Please refer to FIG. 7H, which is a schematic cross-sectional view of a modified embodiment of the low reflection metal structure according to the fourth embodiment of the present invention. Under the framework of the low-reflection metal structure of the fourth embodiment of the present invention, a chemical vapor deposition (CVD) process can even be used to form a thin film layer 24 on the first substrate S1, and then form a low-reflection layer. The layer 20 'and the metal layer 10, wherein the thin film layer 24 may be a single-layer or multi-layer structure of a silicon film, a silicon oxide film, or a silicon nitride film, such as: silicon (Si), silicon oxide (SiOx), or silicon nitride ( SiNx), such as the thin film layer 24 shown in FIG. 7H, but the present invention is not limited thereto, and then the low-reflection layer 20 'or the metal layer 10 is formed. This method can further reduce the patterned low-reflection layer 22' or the pattern. By reflecting the reflection of the metal layer 12 and improving the uniformity of the overall low reflection metal structure, a better light shielding effect can be exerted. It should be noted that, since the thin film layer 24 does not need to be patterned, the formation of the thin film layer 24 does not cause process complexity.

Please refer to FIG. 8, which is a schematic cross-sectional view of a low reflection metal structure according to a fifth embodiment of the present invention. As shown in FIG. 8, this embodiment is different from the third embodiment in that, when the low-reflection layer 20 is formed on the metal layer 10, the low-reflection layer 20 ′ is formed under the metal layer 10 at the same time, and the The flow of oxygen reacts at the same time between the metal layer 10 and the low-reflection layer 20 and between the metal layer 10 and the low-reflection layer 20 'to generate extremely thin interface layers 14, 14', and then uses the patterning process together Patterning the metal layer 10, the low reflection layers 20, 20 ', and the interface layers 14, 14' to form a patterned metal layer 12, the patterned low reflection layers 22, 22 ', and the patterned interface layers 14, 14' . The material of the low reflection layer 20 'is preferably the same as the material of the low reflection layer 20, and the material of the interface layer 14' is preferably the same as the material of the interface layer 14, but the invention is not limited thereto. Since the interface layer 14 ′ and the interface layer 14 have the same effect of reducing the reflection of the patterned metal layer 12, the reflection of the patterned metal layer 12 can be further reduced, so that the patterned low reflection layer 22 can exert a better light shielding effect and further Replaces the black matrix layer.

Please refer to Figures 9 to 11 as well as Figures 2 to 6. FIG. 9 is a top view of a display panel according to an embodiment of the present invention. Fig. 10 is a schematic cross-sectional view taken along the line A-A 'in Fig. 9. Fig. 11 is a schematic cross-sectional view taken along the line B-B 'in Fig. 9. As shown in FIG. 9 to FIG. 11, this embodiment discloses a method for fabricating a display panel, which includes performing the foregoing steps of fabricating a low-reflection metal structure to form a patterned metal layer 12 and an upper and / or lower layer thereof. The low-reflection layer 22 is patterned, and a plurality of pixel structures P are formed on the first substrate S1. The patterned low reflection layer 22 of FIGS. 10 and 11 is disposed above the patterned metal layer 12 and is an exemplary embodiment of the present invention. The present invention is not limited thereto. The patterned low reflection layer 22 is disposed on the pattern. Above and / or below the metallized metal layer 12 are within the scope of the present invention. Specifically, the patterned metal layer 12 may include at least one of a gate line GL, a gate G, a common line CL, a data line DL, a source S, a drain D, or any line. For example, when the patterned metal layer 12 is the gate line GL, the gate G, and the common line CL, a patterned low reflection layer 22 is formed thereon; when the patterned metal layer 12 is the data line DL, the source S, drain D, or any circuit, a patterned low reflection layer 22 is formed thereon. The patterned metal layer 12 of the present invention is not limited to the above elements and may be any metal structure on the first substrate S1. In this embodiment, the gate line GL, the gate G, the common line CL, the data line DL, the source S, the drain D, or any line has a patterned low reflection layer 22, so the gate line GL, the gate The electrode G, the common line CL, the data line DL, the source S, the drain D, or any line will be shielded without reflecting external light.

In this embodiment, the pixel structure P may include a thin film transistor TFT, a common electrode CE, and a pixel electrode PE. The thin film transistor TFT includes a gate G, a source S, a drain D, a gate insulating layer GI, and Channel layer CH. In this embodiment, the thin-film transistor TFT is a bottom-gate thin-film transistor, but the present invention is not limited thereto. The thin-film transistor TFT may also be a top-gate thin-film transistor or other types of thin-film transistors. . Specifically, the gate G of the thin film transistor TFT is electrically connected to the gate line GL, and the source S of the thin film transistor TFT is electrically connected to the data line DL. In addition, the pixel electrode PE is electrically connected to the drain electrode D of the thin film transistor TFT through a contact window C. In this embodiment, a gate insulating layer GI is provided between the gate line GL and the data line DL and between the common line CL and the data line DL, and the gate line GL and the data line DL and the common line CL are electrically insulated. With data line DL. In addition, a protective layer 30 is also provided between the pixel electrode PE and the common electrode CE. In addition, when the light source of the display panel is provided by the present invention, the order of light passing through the display panel may be: first through the first substrate S1 with the thin film transistor TFT and then through the second substrate S2; A first substrate S1 having a thin film transistor TFT. In detail, in this embodiment, the thin film transistor TFT is fabricated on a substrate through which light first passes, but the invention is not limited thereto. In another embodiment of the present invention, the light can pass through the second substrate S2 and then the first substrate S1 with the thin film transistor TFT. The lines on the first substrate S1 have the structure of the patterned low reflection layer 22, so The optical characteristics of the display panel can be improved, and the goal of a full-plane display panel can be achieved, that is, the display panel of the present invention can be a frameless display panel.

Subsequently, a second substrate S2 is formed on the first substrate S1. Then, a display medium layer M is formed between the first substrate S1 and the second substrate S2. The material of the second substrate S2 may be plastic, glass, or other suitable materials. A color filter layer (not shown), such as a COA (color filter on array) structure, may be disposed on the first substrate S1 or the second substrate S2, and the color filter layer may include a plurality of color filter patterns (not shown). For example: red, green and blue color filter patterns, but the invention is not limited to this. The display medium layer M is sealed between the first substrate S1 and the second substrate S2, and the display medium layer M may include a liquid crystal layer, an organic light emitting diode (OLED) element, or an electrophoresis layer, and the application range may also be The touch-sensitive display or the 3D stereo display is covered, but the present invention is not limited thereto. In this embodiment, the common electrode CE is disposed on the second substrate S2, but the present invention is not limited thereto. The common electrode CE may be disposed on one of the second substrate S2 or the first substrate S1.

By forming the patterned low-reflection layer 22 over the patterned metal layer 12, the patterned low-reflection layer 22 can be used to replace the gate line GL, gate G, common line CL, data line DL, source S, or drain that originally shielded The black matrix layer of the pole D, so the user cannot observe the metal traces inside the display panel. Therefore, compared with the conventional display panel, the aperture ratio of the display panel in this embodiment can be effectively improved, and the method for manufacturing a display panel provided in this embodiment can omit the step of manufacturing a black matrix layer, thereby reducing the manufacturing process. Cost effect.

In summary, in the low-reflection metal structure, display panel and manufacturing method of the present invention, a patterned low-reflection layer is provided on the patterned metal layer, so that the patterned metal layer is shielded from reflecting external light. This reduces the visibility of the metal structure and replaces the conventional black matrix layer. Because the display panel and the manufacturing method of the present invention do not need to provide a black matrix layer, compared with the conventional display panel, the aperture ratio of the display panel can be effectively improved and a mask process can be reduced at the same time, thereby reducing the complexity of the process and Process costs. The above description is only a preferred embodiment of the present invention, and all equivalent changes and modifications made in accordance with the scope of patent application of the present invention shall fall within the scope of the present invention.

C‧‧‧Contact window
CE‧‧‧Common electrode
CH‧‧‧ Channel layer
CL‧‧‧ Common Line
D‧‧‧ Drain
D1, D2, D3‧‧‧‧thickness
DL‧‧‧Data Line
G‧‧‧Gate
GI‧‧‧Gate insulation
GL‧‧‧Gate line
M‧‧‧Display media layer
P‧‧‧ pixel structure
PE‧‧‧Pixel electrode
R‧‧‧ reactive sputtering process
S‧‧‧Source
S1‧‧‧First substrate
S2‧‧‧Second substrate
TFT‧‧‧thin-film transistor θ‧‧‧angle
10‧‧‧ metal layer
12‧‧‧ patterned metal layer
12B‧‧‧ bottom metal layer
12L‧‧‧ bottom surface
12S‧‧‧Side surface
12T‧‧‧Top metal layer
12U‧‧‧Top surface
14,14'‧‧‧Interface layer
20,20'‧‧‧Low reflection layer
22,22'‧‧‧patterned low reflection layer
30‧‧‧ protective layer
24‧‧‧ film layer

FIG. 1 to FIG. 4 are schematic diagrams of a method for manufacturing a low reflection metal structure according to the first embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a low reflection metal structure according to a second embodiment of the present invention. FIG. 6 is a schematic cross-sectional view of a low reflection metal structure according to a third embodiment of the present invention. FIG. 7A is a schematic cross-sectional view of a low reflection metal structure according to a fourth embodiment of the present invention. FIG. 7B is a transmission electron microscope image without an interface layer between the metal layer and the first substrate. FIG. 7C is a transmission electron microscope image with an interface layer between the metal layer and the first substrate. Fig. 7D shows the color of the black screen displayed on the display of the structure shown in Fig. 7B. Fig. 7E shows the color of the black screen displayed on the display of the structure shown in Fig. 7C. FIG. 7F is a graph showing the relationship between the structure shown in FIG. 7B and the reflectance at different wavelengths. Fig. 7G is a graph showing the relationship between the structure shown in Fig. 7C and the reflectance at different wavelengths. FIG. 7H is a schematic cross-sectional view of a modified embodiment of a low reflection metal structure according to a fourth embodiment of the present invention. FIG. 8 is a schematic cross-sectional view of a low reflection metal structure according to a fifth embodiment of the present invention. FIG. 9 is a top view of a display panel according to an embodiment of the present invention. Fig. 10 is a schematic cross-sectional view taken along the line A-A 'in Fig. 9. Fig. 11 is a schematic cross-sectional view taken along the line B-B 'in Fig. 9.

S1‧‧‧First substrate

θ‧‧‧ angle

12‧‧‧ patterned metal layer

12L‧‧‧ bottom surface

12S‧‧‧Side surface

12U‧‧‧Top surface

22‧‧‧ patterned low reflection layer

Claims (36)

A method for manufacturing a low-reflection metal structure includes: providing a first substrate; forming a metal layer on the first substrate; forming a low-reflection layer on and / or below the metal layer, wherein the low-reflection layer includes a A metal oxide layer or a metal oxynitride layer; and performing a patterning process on the low reflection layer and the metal layer to form a patterned low reflection layer and a patterned metal layer. The method for fabricating a low-reflection metal structure according to claim 1, wherein the step of forming the low-reflection layer on and / or under the metal layer includes performing a reactive sputtering process. The method for manufacturing a low-reflection metal structure according to claim 2, further comprising: when forming the low-reflection layer on and / or under the metal layer, between the first substrate and the patterned low-reflection layer, Or, an interface layer is formed between the metal layer and the low reflection layer; and the interface layer is patterned together by using the patterning process. The method for manufacturing a low-reflection metal structure according to claim 3, wherein a material of the interface layer includes a metal oxide or a metal oxynitride. The method for manufacturing a low-reflection metal structure according to claim 1, wherein when the low-reflection layer is formed on the metal layer, the patterned low-reflection layer only covers the top surface of the patterned metal layer and does not cover the patterning. The side surface of the metal layer. The method for manufacturing a low-reflection metal structure as described in claim 1, wherein the thickness of the patterned low-reflection layer is between 50 Angstroms (Å) to 500 Angstroms (Å). The method for manufacturing a low-reflection metal structure according to claim 1, wherein the patterned metal layer has a stacked structure, which includes a bottom metal layer and a top metal layer on the bottom metal layer. The method for manufacturing a low-reflection metal structure as described in claim 7, wherein the thickness of the bottom metal layer is between 50 Angstroms (Å) and 500 Angstroms (Å), and the thickness of the top metal layer is between 2000 Å and 2,000 Å. Between Angstrom (Å) to 7000 Angstrom (Å). The method for manufacturing a low-reflection metal structure according to claim 1, wherein the reflectivity of the patterned low-reflection layer is between 2% and 20%. The method for fabricating a low-reflection metal structure according to claim 1, wherein the atomic percent of oxygen in the metal oxide layer is between 5% and 50%. The method for manufacturing a low reflection metal structure according to claim 1, wherein the metal oxide layer includes a molybdenum oxide layer or a molybdenum tantalum oxide layer. The method for fabricating a low-reflection metal structure according to claim 1, wherein the atomic percent of oxygen in the metal oxynitride layer is between 5% and 50%, and the metal oxynitride layer The content of nitrogen is between 1% and 10%. The method for manufacturing a low reflection metal structure according to claim 1, wherein the metal oxynitride layer includes a molybdenum oxynitride layer or a molybdenum tantalum oxynitride layer. The method for manufacturing a low-reflection metal structure according to claim 1, wherein an angle is formed between a side surface and a bottom surface of the patterned metal layer, and the included angle is between 10 degrees and 80 degrees. The method for fabricating a low-reflection metal structure according to claim 1, wherein the low-reflection layer is an amorphous phase. The method for manufacturing a low-reflection metal structure according to claim 1, further comprising forming a thin film layer on the first substrate before forming the metal layer and the low-reflection layer, and the thin film layer is a silicon thin film, Monolayer or multilayer structure of silicon oxide film or silicon nitride film. A method for manufacturing a display panel, comprising: performing the method for manufacturing a low-reflection metal structure described in claim 1; forming a plurality of pixel structures on the first substrate; and forming a second substrate on the first substrate; And forming a display medium layer between the first substrate and the second substrate. The method for manufacturing a display panel according to claim 17, wherein the patterned metal layer includes at least one of a gate line, a gate, a common line, a data line, a source or a drain. A low-reflection metal structure includes: a first substrate; a patterned metal layer disposed on the first substrate; and a patterned low-reflection layer disposed on and / or under the patterned metal layer. The method for manufacturing a low-reflection metal structure as described in claim 19, wherein when the patterned low-reflection layer is disposed on the patterned metal layer, the patterned low-reflection layer only covers the top surface of the patterned metal layer without Cover the side surface of the patterned metal layer. The low reflection metal structure according to claim 19, wherein the thickness of the patterned low reflection layer is between 50 Angstroms (Å) to 500 Angstroms (Å). The low-reflection metal structure according to claim 19, wherein the patterned metal layer has a stacked structure including a bottom metal layer and a top metal layer on the bottom metal layer. The low reflection metal structure according to claim 22, wherein the thickness of the base metal layer is between 50 Angstroms (Å) to 500 Angstroms (Å), and the thickness of the top metal layer is between 2000 Angstroms (Å) ) ~ 7000 Angstroms (Å). The low reflection metal structure according to claim 19, wherein the reflectivity of the patterned low reflection layer is between 2% and 20%. The low reflection metal structure according to claim 19, wherein the patterned low reflection layer includes a metal oxide layer or a metal oxynitride layer. The low reflection metal structure according to claim 25, wherein the atomic percent of oxygen in the metal oxide layer is between 5% and 50%. The low reflection metal structure according to claim 25, wherein the metal oxide layer comprises a molybdenum oxide layer or a molybdenum tantalum oxide layer. The method for manufacturing a low reflection metal structure according to claim 25, wherein the atomic percent of oxygen in the metal oxynitride layer is between 5% and 50%, and the metal oxynitride layer The content of nitrogen is between 1% and 10%. The low reflection metal structure according to claim 25, wherein the metal oxynitride layer comprises a molybdenum oxynitride layer or a molybdenum tantalum oxynitride layer. The low-reflective metal structure according to claim 19, wherein the patterned metal layer has an included angle between a side surface and a bottom surface, and the included angle is between 10 degrees and 80 degrees. The low reflection metal structure according to claim 19, further comprising an interface layer disposed between the first substrate and the patterned low reflection layer, or between the patterned metal layer and the patterned low reflection layer. The method for manufacturing a low-reflection metal structure according to claim 31, wherein a material of the interface layer includes a metal oxide or a metal oxynitride. The low-reflection metal structure according to claim 19, wherein the patterned low-reflection layer is an amorphous phase. A display panel includes: the low reflection metal structure as described in claim 19; a plurality of pixel structures disposed on the first substrate; a second substrate disposed on the first substrate; and a display medium A layer is disposed between the first substrate and the second substrate. The display panel according to claim 34, comprising a color filter disposed on the first substrate or the second substrate. The display panel according to claim 34, wherein the patterned metal layer includes at least one of a gate line, a gate, a common line, a data line, a source or a drain.