TW201810460A - Method of manufacturing semiconductor device - Google Patents

Abstract

The embodiment of the present invention provides a method of manufacturing a semiconductor device capable of effectively enlarging a gap between bonding lines that are brought into contact with a wire bond. The method includes the steps of: electrically connecting a plurality of first junctions and a plurality of second junctions with bonding wires using a capillary tube into which a bonding wire is inserted; measuring the gaps between the adjacent bonding wires; setting a capillary tube between a group of binding wires with a gap below the set value, and enabling the capillary side to move in the wiring direction of the at least one bonding wire contact edge connecting line to widen the gap between the adjacent bonding wires.

Description

Manufacturing method of semiconductor device

An embodiment of the present invention relates to a method for manufacturing a semiconductor device.

In semiconductor memory devices with built-in memory chips such as NAND-type flash memory, miniaturization and high-capacity development are rapidly progressing. In a semiconductor device such as a semiconductor memory device, in order to achieve both miniaturization and high capacity, for example, a configuration is adopted in which semiconductor wafers such as a plurality of memory wafers are sequentially laminated on a circuit substrate, and the semiconductor wafers are laminated with a resin layer. seal. Furthermore, as for the terminals of the circuit substrate or the electrode pads of the semiconductor wafer, the formation of narrower pitches has continued to progress. When a terminal of such a circuit substrate is electrically connected to an electrode pad of a semiconductor wafer with a bonding wire, contact may occur between adjacent bonding wires, or even if no contact occurs during wire bonding, the wire interval may be narrowed. The contact between the bonding wires is easily caused by a line shift in the resin sealing step of the subsequent step. In the wire bonding step or the resin sealing step, a semiconductor device that is brought into contact between adjacent bonding wires is treated as a defective product, resulting in a decrease in the yield of the semiconductor device. Although various techniques for preventing contact between adjacent bonding wires have been proposed, if additional structures are used, the manufacturing cost or manufacturing man-hours of a semiconductor device will increase. Furthermore, the narrower the pitch of the formation of the terminals of the circuit substrate or the electrode pads of the semiconductor wafer, the more likely it is that contact between the bonding wires will occur, so it becomes more and more difficult to prevent contact between the wires. In addition, it has also been developed that the interval between the bonding wires can be manually enlarged by the operator using an inspection device that can perform fine control. However, this operation has extremely low production efficiency, which inevitably leads to an increase in the manufacturing cost or man-hours of the semiconductor device .

An embodiment of the present invention provides a method for manufacturing a semiconductor device, which can effectively expand the interval between bonding wires that may cause contact during wire bonding or contact in subsequent steps. The method of manufacturing a semiconductor device according to an embodiment includes the following steps: using a solder pin inserted with a bonding wire to electrically connect a plurality of first bonding portions and a plurality of second bonding portions with the bonding wires, the plurality of 1 joint part is provided in the first device constituent part, and the plurality of second joint parts are provided in the second device constituent part; in the plurality of joint lines connecting the plurality of first joint parts and the plurality of second joint parts To measure the gap between the adjacent bonding wires; select the group of bonding wires whose measured gap between the adjacent bonding wires is below a set value; and arrange the welding between the selected group of the bonding wires The needle causes one side of the soldering pin to contact at least one of the bonding wires, and moves the welding pin along the wiring direction of the bonding wires to expand the gap between the group of bonding wires.

Hereinafter, a method for manufacturing a semiconductor device according to an embodiment will be described with reference to the drawings. FIG. 1 is a diagram showing a configuration of a semiconductor manufacturing apparatus used in the manufacturing method of the embodiment. The semiconductor manufacturing apparatus (wire bonding apparatus) 1 shown in FIG. 1 not only performs a wire bonding operation (step), that is, a plurality of first bonding portions of a first device constituent part and a second device constituent part are respectively bonded by a bonding wire. The plurality of second joints are electrically connected, and a line repair operation (step) is also performed. That is, when a plurality of joint lines connecting the plurality of first joints and the plurality of second joints are adjacent to each other, Increase the gap when the gap is less than the set value. The semiconductor manufacturing apparatus 1 shown in FIG. 1 includes a bonding head 3 provided on an X-Y stage 2. A joint arm 4 is attached to the joint head 3. A joint platform 5 is disposed on the front end side of the joint arm 4 of the joint head 3. On the bonding stage 5, for example, a substrate 7 on which a plurality of semiconductor wafers 6 are mounted is mounted as a bonding component. The engaging platform 5 can be moved in the X-Y direction by a moving mechanism (not shown). The bonding arm 4 is configured to be driven around a rotation center by a Z-direction motor (not shown), and the front end of the bonding arm 4 is connected to and separated from the pad surface of the semiconductor wafer 6 and the terminal surface of the substrate 7 as bonding surfaces. A welding pin 8 is mounted on the front end of the engaging arm 4. The joint head 3 is configured to be able to move freely in the plane (in the X-Y plane) along the joint surface using the X-Y stage 2. Furthermore, the front end of the joint arm 4 and the welding pin 8 attached to the front end of the joint arm 4 are configured to be able to move freely in the X-Y-Z direction by driving the joint arm 4 with a Z-direction motor. As the welding pin 8, for example, a bottle-shaped welding pin is used. As shown in FIG. 2, the welding pin 8 includes a cylindrical body having a conical front end portion 9, and a through hole 10 is provided at the center of the cylindrical body. A bonding wire 11 is inserted into the through hole 10 of the solder pin 8. The bonding wire 11 is supplied from a spool 12 arranged on the bonding head 3. As the bonding wire 11, a gold thin wire, a silver thin wire, a copper thin wire, or the like can be used. The engaging arm 4 includes an ultrasonic vibrator 13, and ultrasonic energy is supplied from the ultrasonic vibrator 13 to the welding pin 8. The bonding head 3 includes a wire clip 14 that holds the bonding wire 11 inserted in the solder pin 8. The wire clip 14 is located above the welding pin 8 and can move freely along with the welding pin 8 in the X-Y-Z direction. The clamp 14 can be moved in the Z direction alone. The wire clip 14 includes an opening and closing mechanism 15, and the opening and closing mechanism 15 is used to open and close the wire clip 14. A camera (for example, a CMOS (Complementary Metal Oxide Semiconductor) image sensor or a CCD (Charge Coupled Device) image sensor) 16 is mounted on the bonding head 3 as an imaging unit, An image of the semiconductor wafer 6 or the substrate 7 and an image of a bonding wire 11 connecting the semiconductor wafer 6 and the substrate 7 described below are acquired. According to the image captured by the camera 16, the welding pin 8 is positioned in the X-Y direction during the wire bonding step and the wire repair step, and the movement of the solder pin 8 in the X-Y direction is controlled during the wire repair step. The position detection and operation of each part of the semiconductor manufacturing apparatus 1 are controlled by the control unit 17. As a bonding part that performs the wire bonding operation and the wire repair operation using the semiconductor manufacturing apparatus 1 of the embodiment, as shown in FIG. 3, the following semiconductor parts are listed: a circuit board 7 such as a wiring board or a plug-in board as a component of the first device A semiconductor wafer 6 as a component of the second device is mounted thereon. The semiconductor wafer 6 includes a plurality of electrode pads 21 formed at specific intervals along the outer edges. The circuit board 7 includes a plurality of bonding pads 22 formed at a specific pitch in a manner corresponding to the plurality of electrode pads 21. In the bonding component, a lead frame may be used instead of the circuit board 7. The bonding component may be a semiconductor component including a first semiconductor wafer as a first device component, and a second semiconductor wafer laminated on the first semiconductor wafer as a second device component. Examples of the stacked first and second semiconductor wafers include a memory wafer such as a NAND flash memory. In a semiconductor component in which a plurality of memory chips are stacked, the electrode pads of the memory chip and the first joint (terminal) of the circuit substrate and the electrode pads of the memory chip are electrically connected by a bonding wire. The bonding part may also be a semiconductor part which is laminated on a plurality of memory wafers which are single layers or laminated layers of the first semiconductor wafer, and a controller wafer, an interface wafer, a logic wafer, and RF (Radio) are laminated as the second semiconductor wafer. Frequency (radio frequency) chip and other system LSI (Large Scale Integrated circuit, large scale integrated circuit) chip. In the semiconductor component described above, the bonding pad 22 of the circuit board 7 and the electrode pad 21 of the semiconductor wafer 6 are electrically connected by a bonding wire 23. Alternatively, the first electrode pad of the first semiconductor wafer and the second electrode pad of the second semiconductor wafer laminated on the first semiconductor wafer are electrically connected by a bonding wire. Further, as shown in FIG. 3, the bonding wires 231 connecting the bonding pads 21 and the electrode pads 22 are bent or inclined, and come into contact with the adjacent bonding wires 232, or even if they are not in contact, When the gap is also below the set value, for example, repair of the bonding wire 231 is performed. With these steps, a required semiconductor device is manufactured. Next, operations and procedures of the semiconductor manufacturing apparatus (bonding apparatus) 1 according to the embodiment will be described. First, a first operation control example of the semiconductor manufacturing apparatus 1 will be described with reference to a flowchart shown in FIG. 4. In addition, the following mainly describes the case where the bonding pad 22 of the circuit substrate 7 and the electrode pad 21 of the semiconductor wafer 6 are electrically connected by the bonding wire 23, but a lead frame is used instead of the circuit substrate 7, or the first semiconductor wafer is The operations and steps are the same when the first electrode pad is electrically connected to the second electrode pad of the second semiconductor wafer. First, a wire bonding step is performed (S101). Before the wire bonding step, the camera 16 is used to photograph the bonding pads 22 of the circuit board 7 and the electrode pads 21 of the semiconductor wafer 6. Based on this photographing result, each position of the bonding pad 22 and the electrode pad 21 in the X-Y direction is identified. The movement of the welding pin 8 in the wire bonding step and the wire repair step is controlled based on the position recognition results of the bonding pad 22 and the electrode pad 21. In the wire bonding step, for example, the solder pin 8 is moved on the first bonding pad 22a, and a ball formed at the front end of the bonding wire 11 is connected to the first bonding pad 22a (ball bonding). The bonding wire 11 is sent out from the welding pin 8 and the welding pin 8 is moved on the first electrode pad 21 a with a specific trajectory. After the bonding wire 11 is connected (pin-type bonding) to the first electrode pad 21 a, the bonding wire 11 is held and cut by the clip 14. Thereby, the first bonding pad 22a and the first electrode pad 21a are connected by the first bonding wire 23a. The wire bonding step described above is performed on all the bonding pads 22 and the electrode pads 21. The wiring structure of the bonding pad 22 and the electrode pad 21 realized by the bonding wire 23 is not limited to the above-mentioned bonding structure (reverse (reverse) bonding). The bonding structure may also be a structure (positive (positive) bonding): a ball connection (spherical bonding) formed at the front end of the bonding wire 11 is connected to the electrode pad 21, and the bonding wire 11 is connected (pin bonding) to the bonding pad twenty two. However, by the reverse bonding, the loop height of the bonding wire 23 can be reduced, and the loop shape can be relatively simplified. Next, all the bonding wires 23 connected to the bonding pad 22 and the electrode pad 21 are photographed by the camera 16, and the interval (clearance) between adjacent bonding wires 23 is measured (S102). According to the measurement result of the clearance between the adjacent bonding wires 23, the bonding wires 23 below the set value are selected. The measurement of the gap between adjacent bonding wires 23 is, for example, measuring the amount of deviation of a bonding wire 23 from a set trajectory (virtual line) according to the shooting results of the bonding wire 23. If the measured value is above the set value, it needs to be repaired Of the bonding wire 23. In addition, it is determined whether or not the bonding wire 23 adjacent to the bonding wire 23 that needs to be repaired when the measured value is equal to or greater than the set value exists in the direction deviating from the set trajectory. If there is a bonding wire 23 adjacent to the direction deviating from the set trajectory, select the bonding wire 23 whose measurement value is greater than the set value and needs to be repaired, and the bonding line 23 adjacent to the direction deviating from the set trajectory as the need for repair A group of bonding wires 23. Alternatively, the interval between adjacent bonding wires 23 can also be directly measured. When the minimum value of the gap is less than a set value (including contact (clearance = zero)), it is selected as a group of bonding wires 23 to be repaired. The set value (threshold value) used to select the bonding wire 23 to be repaired is not limited to a value capable of judging the contact between adjacent bonding wires 23, but may also be set to include, for example, the value between the adjacent bonding wires 23 in a subsequent step. High value (interval) of contact possibility. For example, generally, the step of resin-sealing the semiconductor wafer 6 is performed after the wire bonding step. If transfer molding is used for the resin sealing of the semiconductor wafer 6, there is a possibility that the bonding wire may be shifted (line shifted), which may cause contact between adjacent bonding wires. The line interval with a high possibility of contact between the bonding wires 23 in such a subsequent step may be set as a set value (threshold value). If there is no possibility of contact between the bonding wires 23 in the subsequent steps, only the bonding wires 23 that can determine the contact between the adjacent bonding wires 23 may be selected. Next, the welding pin 8 is judged (selected) to be repaired near the group of bonding wires 23 in the above-mentioned line interval measurement step (S103), so that the front end portion 9 of the welding pin 8 is in contact with the group of bonding wires 23 At least one of them contacts and moves along the wiring direction to repair the bonding wire 23 (S104). In the thread repairing step, the front end portion 9 is constructed using the bottleneck of the solder pin 8 shown in FIG. 2. The portion contacting the bonding wire 23 is preferably, for example, a portion that is larger than the diameter T of the front end of the front end portion 9 and lower than the height H of the bottleneck. By using the above-mentioned portion, it is easy to move the front end portion 9 of the solder pin 8 and the bonding wire 23 connected to the bonding pad 22 and the electrode pad 21 that are continuously narrowed. In the wire repairing step, as shown in FIG. 5 and FIG. 6, the front end 9 of the welding pin 8 is located between the bonding wire 231 to be repaired in the selected group of bonding wires 23 and the adjacent bonding wire 232. In this way, the welding pin 8 is moved. As shown in FIGS. 5 and 6, the arrangement position of the front end portion 9 is, for example, a position close to between adjacent electrode pads 21. The movement of the solder pin 8 is performed based on the position recognition result in the X-Y plane of the electrode pad 21 and the set height of the electrode pad 21 (bond level of the semiconductor wafer 6). The front end portion 9 of the solder pin 8 is moved toward the bonding pad 22 in the wiring direction from the above-mentioned position while contacting the bonding wire 231. As shown in FIG. 5, the front end 9 of the welding pin 8 can be moved in such a manner as to increase the interval between the adjacent bonding wires 231 and 232. In other words, one side and the two bonding wires 231 and 232 are in contact with each other. According to the deformation direction such as the bending or tilting of a bonding wire 23, it can move while contacting a bonding wire 23. The movement of the front end 9 of the welding pin 8 can also be adjusted according to the deformation mode of the bonding wire 23. Furthermore, the front end portion 9 can be moved only along a portion substantially parallel to the bonding surface of the circuit board 7 (moving in the XY direction), or along the rising portion of the bonding wire 23 to the vicinity of the bonding pad 22 (moving in the XYZ direction). . As shown in FIG. 7, the front end portion 9 of the solder pin 8 in the wire repair step may also be first disposed near the electrode pad 21, and since this position, the rising portion of the bonding wire 23 is substantially parallel to the bonding surface. Partly moves to the vicinity of the electrode pad 21 (moves in the XYZ direction). In this case, the movement of the front end portion 9 including the Z direction is controlled based on the set trajectory (set circuit shape) of the bonding wire 23, for example. In addition, a camera for photographing the position of the bonding wire 23 in the Z direction may be separately provided, and the movement of the front end portion 9 including the Z direction may be controlled according to the photographing result. This line repair step is performed on all the bonding wires 23 determined to be in need of repair. By performing the above-mentioned line repair step, as shown in FIG. 8, the interval between the bonding wires 231 and 232 determined to be repaired can be enlarged. Therefore, it is possible to suppress a decrease in the yield of the semiconductor device due to the contact between the adjacent bonding wires 23 generated in the wire bonding step or the contact between the bonding wires 23 generated in the subsequent steps. The contact between the bonding wires 23 easily occurs when the bonding pad 22 or the electrode pad 21 is formed with a narrow pitch, and when the bonding wire 23 is thinned. Therefore, the manufacturing method of the semiconductor device including the wire repair step of the embodiment is effective when the formation pitch of the bonding pad 22 is 100 μm or less, and further 60 μm or less, and the formation pitch of the electrode pad 21 is 60 μm or less. This is effective when the diameter of the bonding wire 23 is 30 μm or less and further 20 μm or less. Next, a second operation control example of the semiconductor manufacturing apparatus 1 will be described with reference to a flowchart shown in FIG. 9. The second operation control example includes an operation (step) of measuring the interval between adjacent bonding wires 23 again after the repairing step of the bonding wires 23. That is, in the same manner as the first operation control example, a wire bonding step (S201) and a step (S202) of measuring a gap (clearance) between adjacent bonding wires 23 are performed. Next, the measurement result of the interval and the set value (threshold value) are compared. If the measurement result is less than the set value, the bonding wire 23 to be repaired is selected (S203). A step (S204) of moving the welding pin 8 toward the vicinity of the bonding wire 23 that is determined to be repaired (S204), and a step of repairing the bonding wire 23 by the front end 9 of the welding pin 8 (S205) are performed. After the repairing step (S205) of the bonding wire 23 is performed, the interval between the bonding wires 23 is measured again (S202). Next, the measurement result of the interval is compared with the set value (threshold value), and the repairing step of the bonding wire 23 is repeatedly performed until all the measurement results exceed the set value. By implementing the above steps, even if the interval between the adjacent bonding wires 23 is not sufficiently enlarged in one repair step, the interval between all the adjacent bonding wires 23 can still be made to exceed the set value. Therefore, the yield of the semiconductor device can be further improved. Next, a third operation control example of the semiconductor manufacturing apparatus 1 will be described with reference to a flowchart shown in FIG. 10. The third operation control example includes the following operations (steps) before the repairing step of the bonding wire 23: the bonding wire 11 is held and raised by the clamp 14, and the leading end of the bonding wire 11 is stored in the welding pin 8. After the wire bonding step is performed, the front end of the bonding wire 11 protrudes from the front end of the solder pin 8. If the repairing step of the bonding wire 23 is performed in this state, there is a possibility that a bending or the like may occur in the protruding portion, and an abnormality may occur in the next wire bonding step. In this case, since the leading end of the bonding wire 11 is housed in the welding needle 8 before the repairing step of the bonding wire 23, the protruding portion can be prevented from being bent or the like. That is, as in the second operation control example, the wire bonding step (S301), the step (S302) of measuring the interval (clearance) between adjacent bonding wires 23, the measurement result of the interval, and the set value (threshold value) are performed. After the comparison step (selection step of the bonding wire 23 to be repaired) (S303), a step of storing the front end of the bonding wire 11 in the solder pin 8 is performed (S304). Next, as in the second operation control example, the moving step (S305) of the welding needle 8, the repairing step (S306) of the bonding wire 23, and the re-measurement step (S302) of the interval between adjacent bonding wires 23 are performed. Repeat the repair steps of the bonding wire 23 until all the measurement results exceed the set value. By performing the above steps, the repairing step of the bonding wire 23 can be performed without adversely affecting the wire bonding step. Next, a fourth operation control example of the semiconductor manufacturing apparatus 1 will be described with reference to a flowchart shown in FIG. 11. The fourth operation control example includes an operation (step) of measuring only the interval of the repaired bonding wire 23 after the repairing step of the bonding wire 23. In this way, by limiting the interval measurement object after the repair step to the repaired bonding wire 23, it is possible to shorten the time required for re-measurement of the interval. That is, the wire bonding step (S401), the measurement step (S402) of the interval between adjacent bonding wires 23, and the comparison step of the measurement result of the interval and the set value (threshold value) are performed in the same manner as the third operation control example (repair is required) Step of selecting the bonding wire 23) (S403), Step of moving the welding pin 8 (S404), and Step of repairing the bonding wire 23 (S405). After that, a step of measuring the line interval of the repaired bonding wire 23 is performed (S407). The repairing step of the bonding wire 23 is repeatedly performed until the measurement result exceeds the set value. By implementing the above steps, it is possible to further improve the yield while shortening the manufacturing steps of the semiconductor device. The second to fourth motion controls described above can be used in combination. For example, FIG. 12 is a flowchart of a fifth operation control example in which a third operation control example and a fourth operation control example of the semiconductor manufacturing apparatus 1 are combined. That is, the fifth operation control example includes a step (S504) of storing the leading end of the bonding wire 11 in the welding pin 8, and a step (S508) of measuring the line interval of the repaired bonding wire 23. At this time, as shown in FIG. 13, a step (S605) of storing the front end of the bonding wire 11 in the welding pin 8 may be performed after the moving step (S604) of the welding pin 8. In addition, although some embodiments of the present invention have been described, these embodiments are presented as examples and are not intended to limit the scope of the invention. These novel embodiments can be implemented in various other ways, and various omissions, substitutions, and changes can be made without departing from the spirit of the invention. These embodiments and variations are included in the scope or gist of the invention, and are included in the invention described in the scope of patent application and its equivalent scope. [Related Applications] This case has priority over Japanese Patent Application No. 2016-53320 (application date: March 17, 2016). This case contains all the contents of the basic application by referring to the basic application.

1‧‧‧Semiconductor manufacturing equipment
2‧‧‧XY Stage
3‧‧‧ joint head
4‧‧‧Joint arm
5‧‧‧Joint Platform
6‧‧‧ semiconductor wafer
7‧‧‧circuit board
8‧‧‧welding pin
9‧‧‧ front end
10‧‧‧through hole
11, 23‧‧‧ bonding wire
13‧‧‧ Ultrasonic Oscillator
14‧‧‧clip
15‧‧‧ opening and closing agency
16‧‧‧ Camera
17‧‧‧Control Department
21‧‧‧electrode pad
21a‧‧‧1st electrode pad
22‧‧‧Joint pad
22a‧‧‧The first joint pad
23a‧‧‧The first bonding wire
231‧‧‧ bonding wire
232‧‧‧bonding wire
H‧‧‧ Bottleneck height
S101 ～ S608‧‧‧step
T‧‧‧ front diameter

FIG. 1 is a sectional view showing a semiconductor manufacturing apparatus according to the embodiment. FIG. 2 is a diagram showing an example of a solder pin used in the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 3 is a diagram showing an example of a semiconductor component that is subjected to a wire bonding step using the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 4 is a flowchart showing a first example of operation control of the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 5 is a diagram showing a line repair procedure using the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 6 is a diagram showing a line repair procedure using the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 7 is a diagram showing a line repair procedure using the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 8 is a view showing a bonding wire after a line repair step is performed using the semiconductor manufacturing apparatus shown in FIG. 1. FIG. 9 is a flowchart showing a second example of the operation control of the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 10 is a flowchart showing a third example of the operation control of the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 11 is a flowchart showing a fourth example of the operation control of the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 12 is a flowchart showing a fifth example of operation control of the semiconductor manufacturing apparatus shown in FIG. 1. FIG. FIG. 13 is a flowchart showing a modification example of the fifth example of the operation control of the semiconductor manufacturing apparatus shown in FIG. 1. FIG.

6‧‧‧ semiconductor wafer

7‧‧‧circuit board

9‧‧‧ front end

21‧‧‧electrode pad

22‧‧‧Joint pad

23‧‧‧ bonding wire

231‧‧‧ bonding wire

232‧‧‧bonding wire

Claims (8)

A method for manufacturing a semiconductor device includes the following steps: using a solder pin inserted with a bonding wire, using the bonding wire to respectively form a plurality of first bonding portions provided on a first device component and a second device configuration Electrical connection between a plurality of second joints of the part; and measuring a gap between the adjacent joint lines among the plurality of joint lines connecting the plurality of first joint portions and the plurality of second joint portions; Select the measured gap between the adjacent bonding wires to be a set of bonding wires below the set value; and arrange the welding pin between the selected group of bonding wires so that one side of the welding pin and at least the bonding wire One touches and one side moves along the wiring direction of the bonding wires, thereby increasing the gap between the above-mentioned group of bonding wires. For example, the method for manufacturing a semiconductor device according to claim 1, further comprising the steps of: after expanding the gap between the group of bonding wires, measuring the gap between the group of bonding wires again; and measuring the group of bonding wires between the two groups again. The measured value of the gap is between the set of bonding wires below the set value. The welding pin is arranged so that one side of the welding pin is in contact with at least one of the bonding wires, and the other side moves in the wiring direction of the bonding wire, and is enlarged again. The gap between the above set of bonding wires. For example, in the method for manufacturing a semiconductor device according to claim 2, in the step of measuring the gap again, only the gap between the group of bonding wires in which the gap is enlarged is measured again. A method for manufacturing a semiconductor device includes the following steps: using a solder pin inserted with a bonding wire, using the bonding wire to respectively form a plurality of first bonding portions provided on a first device component and a second device configuration Electrical connection between the plurality of second joints of the part; and measuring the amount of deviation of the one joint line from the set trajectory among the plurality of joint lines connecting the plurality of first joint portions and the plurality of second joint portions; When one of the measured joint lines deviates from the set trajectory by more than a set value, the first joint line deviated from the set trajectory by more than the set value is selected to be adjacent to the direction in which the first joint line deviates from the set trajectory. The second bonding wire is used as a group of bonding wires; and the solder pin is arranged between the selected group of bonding wires, so that one side of the solder pin is in contact with at least one of the bonding wires, and one side is along the wiring direction of the bonding wire. Move to expand the gap between the set of bonding wires. If the method for manufacturing a semiconductor device according to claim 4, further comprising the steps of: expanding the gap between the set of bonding wires, and measuring the amount of deviation of the first bonding wire from the set trajectory again; and 1 The bonding wire is deviated from the set trajectory by the above-mentioned first bonding wire, and the welding pin is arranged between the group of bonding wires, so that the welding pin is in contact with at least one of the bonding wires and the welding line is along the bonding. The wiring direction of the wire moves, and the gap between the above-mentioned set of bonding wires is enlarged again. For example, the method for manufacturing a semiconductor device according to claim 5, wherein in the above-mentioned re-measurement step, the amount of deviation from the set trajectory is re-measured only for the group of bonding wires whose gaps are enlarged. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein before the above-mentioned solder pins are arranged between the selected one of the bonding wires, the method further includes the following steps: making the above-mentioned bonding inserted in the aforementioned solder pins. The wire rises, and the leading end of the bonding wire is housed in the solder pin. The method for manufacturing a semiconductor device according to any one of claims 1 to 6, wherein the solder pin has a front end portion of a bottleneck structure, and a portion larger than a front end diameter of the front end portion and lower than a height of the bottleneck contacts the bonding wire.