JP2017168702A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which makes it possible to efficiently increase an interval between bonding wires which cause contact or like with one another at the time of wire bonding.SOLUTION: A semiconductor device manufacturing method of an embodiment comprises the steps of: electrically connecting a plurality of first bonding parts 22 and a plurality of second bonding parts 21 by bonding wires 23 with the use of capillaries where bonding wires are inserted, respectively; measuring a clearance between neighboring bonding wires 23; and arranging a capillary (9) between a pair of neighboring bonding wires 23 where a clearance is equal to or less than a predetermined value to increase the clearance between the neighboring bonding wires 23 by moving the capillary (9) along a wire connection direction of the bonding wires 23 and in contact with at least one of the bonding wires 23.SELECTED DRAWING: Figure 5

Description

  Embodiments described herein relate generally to a method for manufacturing a semiconductor device.

  2. Description of the Related Art In semiconductor memory devices incorporating a memory chip such as a NAND flash memory, miniaturization and high capacity have been rapidly advanced. In a semiconductor device such as a semiconductor memory device, in order to achieve both a reduction in size and an increase in capacity, for example, a plurality of semiconductor chips such as a memory chip are sequentially stacked on a circuit substrate, and these semiconductor chips are sealed with a resin layer. The configuration is applied. Furthermore, with respect to terminals of circuit substrates and electrode pads of semiconductor chips, the formation pitch is being narrowed. When such a circuit base terminal and a semiconductor chip electrode pad are electrically connected with a bonding wire, contact between adjacent bonding wires occurs, and even when no contact occurs during wire bonding, the wire spacing By narrowing, it becomes easy to contact between bonding wires by the wire flow in the resin sealing process of a post process.

  A semiconductor device in which contact has occurred between adjacent bonding wires in a wire bonding process, a resin sealing process, or the like is treated as a defect, causing a reduction in the yield of the semiconductor device. Various techniques for preventing contact between adjacent bonding wires have been proposed. However, when an additional structure is used, the manufacturing cost and the number of manufacturing steps of the semiconductor device are increased. Furthermore, contact between bonding wires is more likely to occur as the formation pitch of the terminals of the circuit substrate and the electrode pads of the semiconductor chip is narrowed, and it is becoming difficult to prevent contact between the wires. In addition, it is also considered that an operator can increase the interval between bonding wires manually using an inspection device capable of fine control. However, such an operation is extremely inefficient, and the semiconductor device is manufactured. Increases in cost and manufacturing man-hours are inevitable.

International Publication No. 2012/157599

  The problem to be solved by the present invention is to provide a method of manufacturing a semiconductor device that can efficiently widen the distance between bonding wires that may be contacted during wire bonding or may be contacted in a later process. There is.

  The method of manufacturing a semiconductor device according to the embodiment includes a plurality of first bonding portions provided in the first device component and a plurality of second bonding portions provided in the second device component. A step of electrically connecting each of the bonding wires through the bonding wires, and a plurality of the bondings connected to the plurality of first bonding portions and the plurality of second bonding portions. Measuring a gap between adjacent bonding wires in a wire; selecting a set of bonding wires in which the measured gap between adjacent bonding wires is less than or equal to a set value; and The capillary is disposed between the bonding wires, and the bonding wires are connected along the connecting direction of the bonding wires. By moving the capillary while in contact with one even without, comprises a step of widening the gap between the pair of bonding wires.

It is sectional drawing which shows the semiconductor manufacturing apparatus by embodiment. It is a figure which shows an example of the capillary used for the semiconductor manufacturing apparatus shown in FIG. It is a figure which shows an example of the semiconductor component with which a wire bonding process is implemented using the semiconductor manufacturing apparatus shown in FIG. It is a flowchart figure which shows the 1st example of operation control of the semiconductor manufacturing apparatus shown in FIG. It is a figure which shows the wire repair process using the semiconductor manufacturing apparatus shown in FIG. It is a figure which shows the wire repair process using the semiconductor manufacturing apparatus shown in FIG. It is a figure which shows the wire repair process using the semiconductor manufacturing apparatus shown in FIG. It is a figure which shows the bonding wire after implementing a wire repair process using the semiconductor manufacturing apparatus shown in FIG. It is a flowchart figure which shows the 2nd example of operation control of the semiconductor manufacturing apparatus shown in FIG. FIG. 10 is a flowchart showing a third example of operation control of the semiconductor manufacturing apparatus shown in FIG. 1. FIG. 10 is a flowchart showing a fourth example of operation control of the semiconductor manufacturing apparatus shown in FIG. 1. FIG. 10 is a flowchart showing a fifth example of operation control of the semiconductor manufacturing apparatus shown in FIG. 1. It is a flowchart figure which shows the modification of the 5th example of the operation control of the semiconductor manufacturing apparatus shown in FIG.

  Hereinafter, a method for manufacturing a semiconductor device according to an embodiment will be described with reference to the drawings. FIG. 1 is a diagram showing a configuration of a semiconductor manufacturing apparatus used in the manufacturing method of the embodiment. A semiconductor manufacturing apparatus (wire bonding apparatus) 1 shown in FIG. 1 has a plurality of first bonding portions of a first device component and a plurality of second bonding portions of a second device component as bonding wires. In addition to the wire bonding operation (process) for electrically connecting the plurality of bonding wires connected to the plurality of first bonding portions and the plurality of second bonding portions, there is a gap between adjacent bonding wires. A wire repairing operation (step) is performed to widen the gap when the value is equal to or less than the set value.

  A semiconductor manufacturing apparatus 1 shown in FIG. 1 includes a bonding head 3 installed on an XY stage 2. A bonding arm 4 is attached to the bonding head 3. A bonding stage 5 is disposed on the distal end side of the bonding arm 4 of the bonding head 3. On the bonding stage 5, for example, a substrate 7 on which a plurality of semiconductor chips 6 are mounted is placed as a bonding component. The bonding stage 5 can be moved in the XY directions by a moving mechanism (not shown).

  The bonding arm 4 is driven around a rotation center by a Z-direction motor (not shown), and its tip is configured to contact and separate in an arc shape with respect to the pad surface of the semiconductor chip 6 and the terminal surface of the substrate 7 which are bonding surfaces. Has been. A capillary 8 is attached to the tip of the bonding arm 4. The bonding head 3 is configured to be able to freely move in a plane along the bonding surface (in the XY plane) by the XY stage 2. Further, by driving the bonding arm 4 with a Z-direction motor, the tip of the bonding arm 4 and the capillary 8 attached to the tip of the bonding arm 4 can move freely in the XYZ directions. It is configured.

  For example, a bottleneck capillary is used as the capillary 8. As shown in FIG. 2, the capillary 8 is formed of a cylindrical body having a conical tip 9, and a through hole 10 is provided in the center along the axial direction. A bonding wire 11 is inserted into the through hole 10 of the capillary 8. The bonding wire 11 is supplied from a spool 12 disposed on the bonding head 3. For the bonding wire 11, a gold fine wire, a silver fine wire, a copper fine wire or the like is used. The bonding arm 4 includes an ultrasonic transducer 13, and ultrasonic energy is supplied from the ultrasonic transducer 13 to the capillary 8.

  The bonding head 3 includes a wire clamp 14 that holds the bonding wire 11 inserted through the capillary 8. The wire clamp 14 is located above the capillary 8 and can move freely in the XYZ direction together with the capillary 8. Furthermore, the wire clamp 14 is movable in the Z direction alone. The wire clamp 14 includes an opening / closing mechanism 15, and the opening / closing mechanism 15 drives the wire clamp 14 to open / close.

  The bonding head 3 includes a camera (for example, a CMOS image sensor or a CCD) as an image pickup unit that acquires images of the semiconductor chip 6 and the substrate 7 and the like, and further images of bonding wires 11 connected to the semiconductor chip 6 and the substrate 7 described later. An image sensor 16 is attached. Based on the image captured by the camera 16, the capillary 8 is positioned in the XY direction during the wire bonding process and the wire repair process, and the movement of the capillary 8 in the XY direction during the wire repair process is controlled. Is configured to do. The position detection and operation of each part of the semiconductor manufacturing apparatus 1 are controlled by the control part 17.

  As a bonding component in which the wire bonding operation and the wire repairing operation are performed using the semiconductor manufacturing apparatus 1 of the embodiment, as shown in FIG. 3, a circuit such as a wiring board or an interposer substrate as a first apparatus component A semiconductor component in which a semiconductor chip 6 as a second device component is mounted on the substrate 7 can be mentioned. The semiconductor chip 6 has a plurality of electrode pads 21 formed at a predetermined pitch along the outer side. The circuit board 7 has a plurality of bonding pads 22 formed at a predetermined pitch so as to correspond to the plurality of electrode pads 21. In the bonding component, a lead frame may be used instead of the circuit board 7.

  The bonding component may be a semiconductor component having a first semiconductor chip as a first device component and a second semiconductor chip stacked as a second device component on the first semiconductor chip. Good. Examples of the first and second semiconductor chips to be stacked include a memory chip such as a NAND flash memory. In a semiconductor component in which a plurality of memory chips are laminated, the electrode pads of the memory chip, and the first bonding portion (terminal) of the circuit substrate and the electrode pads of the memory chip are electrically connected by bonding wires. The A semiconductor component in which a controller chip, an interface chip, a logic chip, a system LSI chip such as an RF chip, etc. are stacked as a second semiconductor chip on a single layer or a plurality of stacked memory chips as a first semiconductor chip. There may be.

  In the semiconductor component as described above, the bonding pad 22 of the circuit board 7 and the electrode pad 21 of the semiconductor chip 6 are electrically connected by the bonding wire 23. Alternatively, the first electrode pad of the first semiconductor chip and the second electrode pad of the second semiconductor chip stacked on the first semiconductor chip are electrically connected by a bonding wire. Further, as shown in FIG. 3, the bonding wire 231 connected to the bonding pad 21 and the electrode pad 22 is bent, inclined, etc., and is in contact with the adjacent bonding wire 232, or even if not in contact. When the gap between the bonding wires 231 and 232 to be performed is equal to or smaller than the set value, for example, the bonding wire 231 is repaired. Through these steps, a target semiconductor device is manufactured.

  Next, operations and processes of the semiconductor manufacturing apparatus (wire bonding apparatus) 1 according to the embodiment will be described. First, a first operation control example of the semiconductor manufacturing apparatus 1 will be described with reference to the flowchart shown in FIG. Hereinafter, the case where the bonding pads 22 of the circuit board 7 and the electrode pads 21 of the semiconductor chip 6 are electrically connected by the bonding wires 23 will be mainly described. However, when a lead frame is used instead of the circuit board 7 In addition, the operation and process in the case of electrically connecting the first electrode pad of the first semiconductor chip and the second electrode pad of the second semiconductor chip are the same.

  First, a wire bonding process is performed (S101). Prior to the wire bonding process, the camera 16 images the bonding pads 22 of the circuit board 7 and the electrode pads 21 of the semiconductor chip 6. Based on this imaging result, the positions of the bonding pad 22 and the electrode pad 21 in the XY direction are recognized. The movement of the capillary 8 in the wire bonding process and the wire repairing process is controlled based on the result of position recognition of the bonding pad 22 and the electrode pad 21.

  In the wire bonding step, for example, the capillary 8 is moved onto the first bonding pad 22a, and the ball formed at the tip of the bonding wire 11 is connected to the first bonding pad 22a (ball bonding). The capillary 8 is moved on the first electrode pad 21a along a predetermined locus while the bonding wire 11 is fed out from the capillary 8. After the bonding wire 11 is connected to the first electrode pad 21a (stitch bonding), the bonding wire 11 is grasped by the wire clamp 14 and cut. In this way, the first bonding pad 22a and the first electrode pad 21a are connected by the first bonding wire 23a. Such a wire bonding process is performed for all the bonding pads 22 and the electrode pads 21.

  The connection structure between the bonding pad 22 and the electrode pad 21 by the bonding wire 23 is not limited to the above-described bonding structure (reverse bonding). The bonding structure is a structure (normal bonding) in which a ball formed at the tip of the bonding wire 11 is connected to the electrode pad 21 (ball bonding) and then the bonding wire 11 is connected to the bonding pad 22 (stitch bonding). There may be. However, according to reverse bonding, the loop height of the bonding wire 23 can be lowered, and the loop shape can be relatively simplified.

  Next, with respect to all the bonding wires 23 connected to the bonding pads 22 and the electrode pads 21, the distance between the adjacent bonding wires 23 is measured by imaging with the camera 16 (S102). From the measurement result of the clearance between adjacent bonding wires 23, a bonding wire 23 having a set value or less is selected. The clearance between adjacent bonding wires 23 is measured, for example, by measuring the amount of one bonding wire 23 deviating from a set locus (virtual line) from the imaging result of the bonding wire 23, and this measured value is equal to or larger than the set value. The bonding wire 23 is required to be repaired. Furthermore, when the measured value is equal to or greater than the set value, it is determined whether there is a bonding wire 23 adjacent to the bonding wire 23 that needs to be repaired in a direction deviating from the set locus. When there is an adjacent bonding wire 23 in a direction deviating from the set locus, a bonding wire 23 that has a measured value equal to or larger than the set value and needs to be repaired and an adjacent bonding wire 23 in the direction deviating from the set locus The pair of bonding wires 23 that need repair is selected. Alternatively, the distance between adjacent bonding wires 23 is directly measured, and when the minimum value of the gap is equal to or less than the set value (including contact (clearance = zero)), the bonding wires 23 are selected as a set of bonding wires 23 that need to be repaired. You may do it.

  The setting value (threshold value) for selecting the bonding wire 23 that needs to be repaired is not limited to a value that can be determined that the adjacent bonding wires 23 are in contact with each other. You may make it set including the value (interval) with a high possibility of contact. For example, after the wire bonding process, a process of resin-sealing the semiconductor chip 6 is generally performed. When transfer molding is applied to the resin sealing of the semiconductor chip 6, the bonding wires may shift (wire flow), and adjacent bonding wires may come into contact with each other. A wire interval at which contact between the bonding wires 23 is likely to occur in such a post process may be set as a set value (threshold value). If there is no possibility of contact between the bonding wires 23 in a later process, only the bonding wires 23 that can be determined to be in contact between adjacent bonding wires 23 may be selected.

  Next, the capillary 8 is moved to the vicinity of the set of bonding wires 23 determined (required) to be repaired in the above-described wire interval measurement step (S103), and the tip 9 of the capillary 8 is bonded to the set of bonding wires. The bonding wire 23 is repaired by moving along the connecting direction while contacting at least one of the wires 23 (S104). In the wire repair process, the tip 9 of the bottleneck structure of the capillary 8 shown in FIG. 2 is used. It is preferable that the part brought into contact with the bonding wire 23 is, for example, a part larger than the tip diameter T of the tip part 9 and lower than the bottleneck height H. By using such a portion, the tip 9 of the capillary 8 can be easily moved while being in contact with the bonding wire 22 connected between the bonding pad 22 and the electrode pad 21 whose pitch is being reduced.

  In the wire repairing step, as shown in FIGS. 5 and 6, the tip of the capillary 8 is placed between the bonding wire 231 that needs to be repaired and the bonding wire 232 adjacent thereto in the selected pair of bonding wires 23. The capillary 8 is moved so that the part 9 is located. As shown in FIGS. 5 and 6, for example, the tip 9 is arranged at a position close to the adjacent electrode pads 21. The capillary 8 is moved based on the position recognition result of the electrode pad 21 in the XY plane and the set height of the electrode pad 21 (bond level of the semiconductor chip 6). From such a position, the tip 9 of the capillary 8 is moved toward the bonding pad 22 along the connecting direction while contacting the bonding wire 231.

  As shown in FIG. 5, the tip portion 9 of the capillary 8 moves so as to increase the distance between the adjacent bonding wires 231 and 232, in other words, in contact with the two bonding wires 231 and 232. Alternatively, the single bonding wire 23 may be moved while being in contact with the single bonding wire 23 in accordance with a deformation direction such as bending or inclination of the single bonding wire 23. The movement of the tip 9 of the capillary 8 may be adjusted according to the deformation mode of the bonding wire 23. The tip 9 may be moved (moved in the X-Y direction) only along a portion approximately parallel to the bonding surface of the circuit board 7, or in the vicinity of the bonding pad 22 along the rising portion of the bonding wire 23. May be moved (moved in the XYZ direction).

  As shown in FIG. 7, the tip portion 9 of the capillary 8 in the wire repairing process is first disposed in the vicinity of the electrode pad 21, and from this position along the portion approximately parallel to the bonding surface from the rising portion of the bonding wire 23. You may make it move to the vicinity of the electrode pad 21 (it moves to a XYZ direction). In this case, the movement including the Z direction of the distal end portion 9 is controlled based on, for example, a set locus (set loop shape) of the bonding wire 23. Further, a camera that images the position of the bonding wire 23 in the Z direction may be separately installed, and the movement including the Z direction of the distal end portion 9 may be controlled based on the imaging result. Such a wire repair process is performed for all the bonding wires 23 that are determined to be repaired.

  By performing the above-described wire repairing step, as shown in FIG. 8, the interval between the bonding wires 231 and 232 determined to be repaired can be widened. Accordingly, it is possible to suppress a decrease in the yield of the semiconductor device due to contact between adjacent bonding wires 23 generated in the wire bonding process or contact between bonding wires 23 generated in a subsequent process. Contact between the bonding wires 23 is likely to occur when the formation pitch of the bonding pads 22 and the electrode pads 21 is narrowed or when the bonding wires 23 are thinned. For this reason, the semiconductor device manufacturing method including the wire repair process of the embodiment is effective when the formation pitch of the bonding pads 22 is 100 μm or less, further 60 μm or less, and the formation pitch of the electrode pads 21 is 60 μm or less. The diameter of the bonding wire 23 is effective when it is 30 μm or less, and further 20 μm or less.

  Next, a second operation control example of the semiconductor manufacturing apparatus 1 will be described with reference to the flowchart shown in FIG. The second operation control example includes an operation (step) for re-measuring the distance between adjacent bonding wires 23 after the bonding wire 23 repairing step. That is, similarly to the first operation control example, the wire bonding step (S201) and the measurement step (S202) of the interval (clearance) between adjacent bonding wires 23 are performed. Next, the measurement result of the interval is compared with the set value (threshold value), and when the measurement result is equal to or less than the set value, it is selected as the bonding wire 23 that needs to be repaired (S203). A step of moving the capillary 8 to the vicinity of the bonding wire 23 determined to be repaired (selected) (S204) and a step of repairing the bonding wire 23 by the tip 9 of the capillary 8 (S205) are performed.

  After performing the repair process (S205) of the bonding wire 23, the distance between the bonding wires 23 is measured again (S202). Next, the measurement result of the interval is compared with the set value (threshold value), and the repair process of the bonding wire 23 is repeated until all the measurement results exceed the set value. By performing such a process, even if the distance between adjacent bonding wires 23 is not sufficiently widened in one repair process, the distance between all adjacent bonding wires 23 is finally set. The value can be exceeded. Therefore, the yield of the semiconductor device can be further improved.

  Next, a third operation control example of the semiconductor manufacturing apparatus 1 will be described with reference to the flowchart shown in FIG. The third operation control example includes an operation (process) in which the bonding wire 11 is grasped and raised by the wire clamp 14 and the tip of the bonding wire 11 is accommodated in the capillary 8 before the repairing process of the bonding wire 23. . After performing the wire bonding step, the tip of the bonding wire 11 protrudes from the tip of the capillary 8. If the repairing process of the bonding wire 23 is performed in this state, the protruding portion may be bent and the next wire bonding process may be defective. With respect to such a point, by bending the tip of the bonding wire 11 in the capillary 8 before the repairing process of the bonding wire 23, the protruding portion can be prevented from bending.

  That is, as in the second operation control example, the wire bonding step (S301), the step (S302) for measuring the interval (clearance) between adjacent bonding wires 23, and the comparison between the measurement result of the interval and the set value (threshold). After performing the step (selection step of the bonding wire 23 requiring repair) (S303), the step (S304) of storing the tip of the bonding wire 11 in the capillary 8 is performed. Next, similarly to the second operation control example, a capillary 8 moving step (S305), a bonding wire 23 repairing step (S306), and a remeasurement step (S302) of an interval between adjacent bonding wires 23 are performed. . The process of repairing the bonding wire 23 is repeated until all the measurement results exceed the set value. By performing such a process, the repair process of the bonding wire 23 can be performed without adversely affecting the wire bonding process.

  Next, a fourth operation control example of the semiconductor manufacturing apparatus 1 will be described with reference to the flowchart shown in FIG. The fourth operation control example includes an operation (step) for measuring only the distance between the repaired bonding wires 23 after the repairing step of the bonding wires 23. As described above, by limiting the measurement object of the interval after the repair process to only the repaired bonding wire 23, the time required for the remeasurement of the interval can be shortened.

  That is, similarly to the third operation control example, the wire bonding step (S401), the step of measuring the interval between adjacent bonding wires 23 (S402), the step of comparing the measurement result of the interval and the set value (threshold) (restoration) The bonding wire 23 selecting step (S403) that requires the transfer) (S403), the capillary 8 moving step (S404), and the bonding wire 23 repairing step (S405) are performed. Thereafter, a step (S407) of measuring the wire interval for the repaired bonding wire 23 is performed. Until the measurement result exceeds the set value, the repair process of the bonding wire 23 is repeated. By carrying out such a process, it becomes possible to further improve the yield while shortening the manufacturing process of the semiconductor device.

  The second to fourth operation controls described above can be applied in combination. For example, FIG. 12 is a flowchart of a fifth operation control example in which the third operation control example and the fourth operation control example of the semiconductor manufacturing apparatus 1 are combined. That is, the fifth operation control example includes a step of storing the tip of the bonding wire 11 in the capillary 8 (S504) and a step of measuring the wire interval of the repaired bonding wire 23 (S508). At this time, as shown in FIG. 13, a step (S605) of storing the tip of the bonding wire 11 in the capillary 8 may be performed after the capillary 8 moving step (S604).

  In addition, although several embodiment of this invention was described, these embodiment is shown as an example and is not intending limiting the range of invention. These novel embodiments can be implemented in various other forms, and various omissions, replacements, and changes can be made without departing from the scope of the invention. These embodiments and modifications thereof are included in the scope and gist of the invention, and are included in the invention described in the claims and the equivalents thereof.

  DESCRIPTION OF SYMBOLS 1 ... Semiconductor manufacturing apparatus, 2 ... XY stage, 3 ... Bonding head, 4 ... Bonding arm, 5 ... Bonding stage, 6 ... Semiconductor chip, 7 ... Circuit board, 8 ... Capillary, 9 ... Tip part, 10 ... Through Holes, 11, 23 ... bonding wires, 14 ... wire clamps, 16 ... camera, 17 ... control unit, 21 ... electrode pads, 22 ... bonding pads.

Claims (8)

A capillary in which a bonding wire is inserted is used between a plurality of first bonding portions provided in the first device component and a plurality of second bonding portions provided in the second device component. Electrically connecting with each bonding wire;
Measuring a gap between adjacent bonding wires in the plurality of bonding wires connected to the plurality of first bonding portions and the plurality of second bonding portions;
Selecting a set of bonding wires in which the measured gap between the adjacent bonding wires is a set value or less;
By placing the capillary between the selected pair of bonding wires and moving the capillary while contacting at least one of the bonding wires along the connecting direction of the bonding wires, A method for manufacturing a semiconductor device comprising: a step of widening the gap. Furthermore, after widening the gap between the set of bonding wires, re-measuring the gap between the set of bonding wires;
The capillary is disposed between the pair of bonding wires whose measured value of the gap between the remeasured pair of bonding wires is equal to or less than a set value, and contacts at least one of the bonding wires in the bonding wire connecting direction. The method of manufacturing a semiconductor device according to claim 1, further comprising the step of widening the gap between the pair of bonding wires by moving the capillary while moving the capillary.   3. The method of manufacturing a semiconductor device according to claim 2, wherein in the step of re-measuring the gap, only the gap between the pair of bonding wires widened with the gap is re-measured. A capillary in which a bonding wire is inserted is used between a plurality of first bonding portions provided in the first device component and a plurality of second bonding portions provided in the second device component. Electrically connecting with each bonding wire;
Measuring the amount of one bonding wire deviating from a set locus in the plurality of bonding wires connected to the plurality of first bonding portions and the plurality of second bonding portions;
When the measured amount of the bonding wire deviating from the setting locus is equal to or larger than the set value, the first bonding wire and the first bonding wire whose amount deviating from the setting locus is equal to or larger than the setting value are set. Selecting a second bonding wire adjacent in a direction deviating from the locus as a set of bonding wires;
By placing the capillary between the selected pair of bonding wires and moving the capillary while contacting at least one of the bonding wires along the connecting direction of the bonding wires, A method for manufacturing a semiconductor device comprising: a step of widening the gap. Furthermore, after widening the gap between the set of bonding wires, re-measure the amount deviating from the set locus of the first bonding wire;
The capillary is arranged between the pair of bonding wires including the first bonding wire in which the remeasured amount of the first bonding wire deviates from a set locus is a set value or more, The method of manufacturing a semiconductor device according to claim 4, further comprising a step of re-widening a gap between the pair of bonding wires by moving the capillary while contacting at least one of the bonding wires in a wiring direction.   6. The method of manufacturing a semiconductor device according to claim 5, wherein, in the re-measurement step, the amount deviating from the set locus is re-measured only for the pair of bonding wires having the gaps widened.   Furthermore, before placing the capillary between the selected set of bonding wires, the bonding wire inserted through the capillary is raised, and the tip of the bonding wire is housed in the capillary. The method for manufacturing a semiconductor device according to claim 1.   The said capillary has a front-end | tip part of a bottleneck structure, The part larger than the front-end | tip diameter of the said front-end | tip part and lower than a bottleneck height is made to contact the said bonding wire. 2. A method for manufacturing a semiconductor device according to item 1.

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