JP4175343B2 - Semiconductor pellet and semiconductor device - Google Patents

Semiconductor pellet and semiconductor device Download PDF

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JP4175343B2
JP4175343B2 JP2005180213A JP2005180213A JP4175343B2 JP 4175343 B2 JP4175343 B2 JP 4175343B2 JP 2005180213 A JP2005180213 A JP 2005180213A JP 2005180213 A JP2005180213 A JP 2005180213A JP 4175343 B2 JP4175343 B2 JP 4175343B2
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electrode pads
electrode pad
semiconductor pellet
electrode
semiconductor
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JP2006013497A (en
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彰男 中村
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Oki Electric Industry Co Ltd
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Oki Electric Industry Co Ltd
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Description

この発明は、半導体装置の電極パッドの配置及び構造に関するもので、特に半導体ペレットの周辺部に複数の列をなして配置された電極パッドを有する半導体ペレット及び半導体装置に関するものである。   The present invention relates to the arrangement and structure of electrode pads of a semiconductor device, and more particularly to a semiconductor pellet and a semiconductor device having electrode pads arranged in a plurality of rows around the periphery of the semiconductor pellet.

半導体素子においては、回路動作のための信号の入出力や電位の供給のために電極パッドが設けられている。この電極パッドは、半導体集積回路の入出力端子となるリードフレームやボールグリッドアレイ（ＢＧＡ）用基板などにワイヤボンディングにより電気的に接続される。ワイヤボンディングにより接続する距離を短くするため、電極パッドは一般的に半導体ペレットの外周部に形成される。ワイヤボンディングは金などの金属球を電極パッドに押し付けて接続し、その後細線を中空上で橋渡し、リードフレームなどに再度押し付けて接続する。このため、電極パッドは金属球が押し付けられる部分の面積に更に余裕を持った広さの領域が必要である。   In semiconductor elements, electrode pads are provided for input / output of signals for circuit operation and supply of potential. This electrode pad is electrically connected by wire bonding to a lead frame, a ball grid array (BGA) substrate, or the like serving as an input / output terminal of the semiconductor integrated circuit. In order to shorten the distance to be connected by wire bonding, the electrode pad is generally formed on the outer periphery of the semiconductor pellet. In wire bonding, a metal ball such as gold is pressed against the electrode pad to connect, and then the fine wire is bridged over the hollow and then pressed again to the lead frame or the like for connection. For this reason, the electrode pad needs to have an area with a sufficient margin in the area of the portion where the metal sphere is pressed.

一方、集積回路の微細化が進むにつれて、一つの半導体ペレットに設ける電極パッドの数も増加している。このため、電極パッドを半導体ペレットの外周部に一列に配置することが難しくなり、電極パッド数の多い半導体ペレットでは電極パッドを２列に配置している。
なお、2列に電極パッドを配置した従来技術としては、例えば、下記の特許文献に示されるようなものがある。
特開平２−１１９２３３号公報 特開平２−１８６６５０号公報 On the other hand, as the miniaturization of integrated circuits progresses, the number of electrode pads provided in one semiconductor pellet also increases. For this reason, it becomes difficult to arrange the electrode pads in a row on the outer periphery of the semiconductor pellet, and the electrode pads are arranged in two rows in a semiconductor pellet having a large number of electrode pads.
In addition, as a prior art in which the electrode pads are arranged in two rows, for example, there are those shown in the following patent documents.
Japanese Patent Laid-Open No. 2-119233 Japanese Patent Laid-Open No. 2-186650

しかしながら、上述のような２列構成の電極パッドを有する半導体ペレットにおいては、電極パッドとリードフレームまたは基板とをワイヤボンディングによって電気的に接続（配線）するとき、半導体ペレットの位置ずれなどが要因でワイヤボンディングの金属細線間が電気的にショートしてしまう不良が発生するといった問題点があった。   However, in the semiconductor pellet having the electrode pads having the two-row configuration as described above, when the electrode pad and the lead frame or the substrate are electrically connected (wired) by wire bonding, the semiconductor pellet is misaligned. There has been a problem that a defect occurs in which a wire bonding metal wire is electrically short-circuited.

上記課題を解決するため、この発明では、中央部に集積回路が形成され、周辺部に第１の電極パッドが列状に配置され、第２の電極パッドが第１の電極パッドより外側で第１の電極パッド列と並行に列状に設けられた半導体ペレットにおいて、第２の電極パッドの配置を工夫した。具体的には、第１の電極パッド列と第２の電極パッド列を間隔Ｃ（ここで、間隔Ｃはある電極の中心から他の電極の中心までの距離）だけ離間させ、第１の電極パッドは一定の間隔Ｐ（ここで、間隔Ｐはある電極の中心から他の電極の中心までの距離）を有して配置し、それぞれの電極幅をＳ１としたとき、第２の電極パッドを幅Ｌの配線に接続し、その幅を幅Ｓ２（Ｐ＞Ｓ２＞Ｓ１＋Ｌ）として、半導体ペレットの中心から引かれた線と半導体ペレットの一片とのなす角θ（θ＜９０°）がθ＞ｔａｎ-1（２Ｃ／（Ｐ−Ｓ１））の範囲内にある第２の電極パッドは、前記第１の電極パッド間の中央にその中心が位置するよう配置し、これ以外の第２の電極パッドの中心は、第１の電極パッド間の中央よりも前半導体ペレットの角部よりにずれて位置させた。 In order to solve the above problems, in the present invention, an integrated circuit is formed in the central portion, the first electrode pads are arranged in a row in the peripheral portion, and the second electrode pads are arranged outside the first electrode pads. The arrangement of the second electrode pads was devised in the semiconductor pellets arranged in parallel with one electrode pad row. Specifically, the first electrode pad row and the second electrode pad row are separated from each other by a distance C (where the distance C is a distance from the center of one electrode to the center of another electrode), The pads are arranged with a constant interval P (here, the interval P is the distance from the center of one electrode to the center of another electrode), and when each electrode width is S1, the second electrode pad is An angle θ (θ <90 °) between a line drawn from the center of the semiconductor pellet and one piece of the semiconductor pellet is θ >>θ>. The second electrode pad within the range of tan −1 (2C / (P−S1)) is arranged so that the center thereof is located at the center between the first electrode pads, and the other second electrodes The center of the pad is shifted from the corner of the front semiconductor pellet rather than the center between the first electrode pads. It was positioned.

この発明によれば半導体ペレットの電極パッドとリードフレームやパッケージ用基板などの外部端子とをワイヤボンディングする時、ワイヤボンディングの金属細線間のショートを防ぐことができる。   According to the present invention, when wire bonding is performed between an electrode pad of a semiconductor pellet and an external terminal such as a lead frame or a package substrate, it is possible to prevent a short-circuit between metal wires of wire bonding.

以下に、実施例を示す。   Examples are shown below.

図１（Ａ）、（Ｂ）及び図２はこの発明の第１の実施例の半導体ペレットを示す図である。図１（Ａ）に示すように、半導体ペレット１には周辺部の内側には略正方形の第１の電極パッド２が均一な間隔をもって列状に設けられている。第１の電極パッド２の外側には長方形の第２の電極パッド３がやはり列状に設けられている。なお、図には明記していないが、半導体ペレット１の中央部には集積回路が形成されている。   FIGS. 1A, 1B and 2 are views showing a semiconductor pellet according to the first embodiment of the present invention. As shown in FIG. 1A, semiconductor pellets 1 are provided with substantially square first electrode pads 2 arranged in rows at uniform intervals on the inner side of the periphery. Rectangular second electrode pads 3 are also provided in a row outside the first electrode pads 2. Although not shown in the figure, an integrated circuit is formed at the center of the semiconductor pellet 1.

ここで、半導体ペレットは４本の直線によって２つの領域に区分される。直線によって挟まれた狭い領域、即ち半導体ペレットの各辺の中央部の領域を領域Ａ、それ以外の領域（半導体ペレットの角部に近い領域）を領域Ｂとする。領域Ａと領域Ｂとでは第２の電極パッド３の配置が異なる。具体的には、図１（Ｂ）及び図２を用いて説明する。   Here, the semiconductor pellet is divided into two regions by four straight lines. A narrow region sandwiched by straight lines, that is, a region at the center of each side of the semiconductor pellet is defined as region A, and the other region (region close to the corner of the semiconductor pellet) is defined as region B. In the region A and the region B, the arrangement of the second electrode pads 3 is different. Specifically, this will be described with reference to FIGS.

図１（Ｂ）は図１（Ａ）に示した半導体ペレットの領域Ａにおける第１及び第２の電極パッド２、３の配置関係を詳細に示した図である。一片の長さＳ１の略正方形の第１の電極パッド２は、それぞれが集積回路と配線４を介して電気的に接続されている。配線４はその用途によって様々な幅を有するが、ここではＬ＝０．０４ｍｍの幅を有している。第１の電極パッド２は一定の間隔Ｐ（ここで間隔Ｐは、第１の電極パッド２の中心間の距離である）だけ離間されて直線上（列状）に配置されている。   FIG. 1B is a diagram showing in detail the positional relationship between the first and second electrode pads 2 and 3 in the region A of the semiconductor pellet shown in FIG. Each of the substantially square first electrode pads 2 having a length of S 1 is electrically connected to the integrated circuit via the wiring 4. The wiring 4 has various widths depending on its use, but here has a width of L = 0.04 mm. The first electrode pads 2 are arranged on a straight line (in a line) with a certain distance P (the distance P is a distance between the centers of the first electrode pads 2).

短辺の長さが第１の電極パッドの一片の長さＳ１と等しい長方形の第２の電極パッド３は、第１の電極パッド２の間を通過するよう配置された配線４を介して集積回路と電気的に接続されている。第２の電極パッド３は第１の電極パッド２よりも外側の直線上（列状）に配置されている。ここで、第１の電極パッドが並んでいる仮想中心線５と第２の電極パッドが並んでいる仮想中心線６とは平行であり、その距離ＣはＳ１より電極パッドを配置する為の余裕分だけ大きな数値となっている。さらに、第２の電極パッド３は、ある第１の電極パッド１の中心の位置に対応する位置近傍から隣の第１の電極パッド１の中心の位置に対応する位置近傍までその長辺が延在する長方形の形状を有している。即ち、第２の電極パッド３は第１の電極パッド２の間の中央にその中心が位置するよう配置されているのである。このため、第２の電極パッド３の長辺の長さＳ２は、 Ｐ＞Ｓ２＞Ｓ１＋Ｌ という関係を有している。   A rectangular second electrode pad 3 having a short side length equal to the length S1 of one piece of the first electrode pad is integrated via a wiring 4 arranged so as to pass between the first electrode pads 2. It is electrically connected to the circuit. The second electrode pads 3 are arranged on a straight line (in a line) outside the first electrode pads 2. Here, the virtual center line 5 in which the first electrode pads are arranged and the virtual center line 6 in which the second electrode pads are arranged are parallel, and the distance C is a margin for arranging the electrode pads from S1. It is a large number by the minute. Further, the long side of the second electrode pad 3 extends from the vicinity of the position corresponding to the center position of a certain first electrode pad 1 to the vicinity of the position corresponding to the center position of the adjacent first electrode pad 1. It has an existing rectangular shape. That is, the second electrode pad 3 is arranged so that the center thereof is located at the center between the first electrode pads 2. For this reason, the length S2 of the long side of the second electrode pad 3 has a relationship of P> S2> S1 + L.

次に、領域Ｂについて説明する。図２は図１（Ａ）に示した半導体ペレットの領域Ｂ（一部の領域Ａを含む）における第１及び第２の電極パッド２、３の配置関係を詳細に示した図である。第１の電極パッド２に関しては、領域Ａと同一であるためその説明を省略する。   Next, the region B will be described. FIG. 2 is a view showing in detail the positional relationship between the first and second electrode pads 2 and 3 in the region B (including a part of the region A) of the semiconductor pellet shown in FIG. Since the first electrode pad 2 is the same as the region A, the description thereof is omitted.

第２の電極パッド３は、その形状、配線４との接続及び直線状に並んでいる点は領域Ａと同一である。領域Ｂの第２の電極パッド３に関して、領域Ａと異なる点は、第２の電極パッド３の第１の電極パッド２に対する位置関係である。すなわち、第２の電極パッド３の中心の位置が、第１の電極パッド２間の中心位置ではなく、角部にずらせた位置になる。この実施例においては、領域Ｂにおいて、第２の電極パッド３の短辺のうち半導体ペレット１の角部に近い方は、第１の電極パッド１の辺のうち半導体ペレット１の角部に近い方と半導体ペレット１の辺と垂直な線において揃っている。   The second electrode pad 3 is the same as the region A in terms of its shape, connection with the wiring 4 and linear alignment. The second electrode pad 3 in the region B is different from the region A in the positional relationship of the second electrode pad 3 with respect to the first electrode pad 2. That is, the center position of the second electrode pad 3 is not the center position between the first electrode pads 2 but is shifted to the corner. In this embodiment, in the region B, the shorter side of the second electrode pad 3 closer to the corner of the semiconductor pellet 1 is closer to the corner of the semiconductor pellet 1 of the first electrode pad 1 side. And are aligned in a line perpendicular to the side of the semiconductor pellet 1.

次に、上述した領域Ａ及び領域Ｂに分けて第２の電極パッド３の配置を換えた理由及び領域の設定について説明する。図３は第１の実施例の半導体ペレットの領域の設定限界を説明する図である。   Next, the reason why the arrangement of the second electrode pad 3 is changed in the above-described region A and region B and the setting of the region will be described. FIG. 3 is a diagram for explaining the setting limit of the semiconductor pellet region of the first embodiment.

図３においては領域Ａのような第１及び第２の電極パッド２、３の配置関係で、領域Ｂにおいてワイヤボンディングした場合のワイヤボンディングの方向を示している。ここで、従来の技術でも説明したように、ワイヤボンディングの始点もしくは終点（端部：すなわち電極パッド及びリードフレームまたは基板）には金属球が物理的に押し付けられる。電極パッドにおいてはその中心に金属球がくるよう位置合わせされるが、機械の精度などにより位置ずれが起こる。略正方形状の第１の電極パッドは、この位置ずれマージンを縦方向及び横方向とも考慮してその大きさが決められている。一方、第２の電極パッドにおいては、短辺が第１の電極パッドの一辺と同じ長さの長方形になっている。これは、縦方向の位置ずれマージンを第１の電極と同様にして、横方向についてはワイヤボンディングする対象（一般に、同一種の半導体ペレットをリードフレームにワイヤボンディングしたり、基板にワイヤボンディングしてＢＧＡにパッケージングすることはよく行われる）の変化に対応できるようにしているのである。   In FIG. 3, the wire bonding direction when wire bonding is performed in the region B is shown by the arrangement relationship of the first and second electrode pads 2 and 3 as in the region A. Here, as described in the prior art, a metal ball is physically pressed against the start point or end point (end portion: that is, the electrode pad and the lead frame or the substrate) of wire bonding. The electrode pad is aligned so that the metal sphere comes to the center of the electrode pad. The size of the first electrode pad having a substantially square shape is determined in consideration of the misalignment margin in the vertical direction and the horizontal direction. On the other hand, in the second electrode pad, the short side is a rectangle having the same length as one side of the first electrode pad. This is because the vertical misalignment margin is the same as that of the first electrode, and in the horizontal direction the object to be wire-bonded (generally, the same kind of semiconductor pellet is wire-bonded to the lead frame or wire-bonded to the substrate. Packaging to BGA is often done).

ところで、ワイヤボンディングは半導体ペレットの中心からの放射線の方向にワイヤボンドされる。すなわち、半導体ペレットの辺の中央部（領域Ａ）ではこの辺に対してほぼ垂直な方向にボンディングされる。したがって、図１（Ｂ）に示したように第２の電極パッド３を第１の電極パッド２の間の中央にその中心が位置するよう配置すればワイヤボンディングした金属細線がショートする可能性は低くなる。しかしながら、半導体ペレットの角部に近い領域Ｂにおいてはこのような位置関係ではうまく行かない。   By the way, wire bonding is wire-bonded in the direction of radiation from the center of the semiconductor pellet. That is, bonding is performed in a direction substantially perpendicular to this side at the central portion (region A) of the side of the semiconductor pellet. Therefore, as shown in FIG. 1B, if the second electrode pad 3 is arranged so that the center is located at the center between the first electrode pads 2, the possibility of short-circuiting the wire-bonded fine metal wire is not possible. Lower. However, such a positional relationship does not work well in the region B near the corner of the semiconductor pellet.

図３で示すように、領域Ｂでは第１及び第２の電極パッド２、３から角度をもってリードフレームなどにワイヤボンドされるため、第２の電極パッド３からワイヤボンドされる金属細線が第１の電極パッド２からワイヤボンドされる金属細線のほぼ中央に位置するためには第２の電極パッド３の中央部から大きくずれた位置に金属球を位置させなければならない。横方向の位置ずれマージンを考慮して、金属球の中心が位置できる限界の位置は、第２の電極パッド３の半導体ペレット１の角部側の短辺から第１の電極パッドの辺の長さＳ１の半分、即ちＳ１／２の位置である。なお、ここでは隣接する第２の電極パッドを離間させるためのマージンを考慮せず計算している。このマージンδを考慮した場合は、以下の式においてＰ／２−Ｓ１／２の代わりにＰ／２−Ｓ１／２−δとすれば良い。限界の位置を通る直線２０が半導体ペレットの辺２１と交わってできる角θ（θ＜９０°）は次の式で表すことができる。
ｔａｎθ＝Ｃ／（Ｐ／２−Ｓ１／２）
∴θ＝ ｔａｎ-1（２Ｃ／（Ｐ−Ｓ１） As shown in FIG. 3, in the region B, the first and second electrode pads 2 and 3 are wire-bonded to the lead frame at an angle, so that the thin metal wire wire-bonded from the second electrode pad 3 is the first. In order to be positioned approximately at the center of the fine metal wire to be wire-bonded from the electrode pad 2, the metal sphere must be positioned at a position greatly deviated from the center of the second electrode pad 3. Considering the lateral displacement margin, the limit position where the center of the metal sphere can be located is from the short side of the second electrode pad 3 on the corner side of the semiconductor pellet 1 to the length of the side of the first electrode pad. The position is half of S1, ie, S1 / 2. Here, the calculation is performed without considering a margin for separating adjacent second electrode pads. When this margin δ is taken into consideration, P / 2−S1 / 2−δ may be used instead of P / 2−S1 / 2 in the following equation. An angle θ (θ <90 °) formed by the straight line 20 passing through the limit position intersecting the side 21 of the semiconductor pellet can be expressed by the following equation.
tan θ = C / (P / 2−S1 / 2)
∴θ = tan −1 (2C / (P−S1)

角度θがこの値よりも小さくなると領域Ａにおける第１及び第２の電極パッド２、３の位置関係ではワイヤボンディングできなくなる。そこで、第２の電極パッド３の半導体ペレット１の角部側の短辺をさらに半導体ペレット１の角部側にずらした領域Ｂにおける第１及び第２の電極パッド２、３の位置関係では、上述のような問題なくワイヤボンディングを行うことができる。   When the angle θ is smaller than this value, wire bonding cannot be performed in the positional relationship between the first and second electrode pads 2 and 3 in the region A. Therefore, in the positional relationship between the first and second electrode pads 2 and 3 in the region B where the short side of the semiconductor pellet 1 of the second electrode pad 3 is further shifted to the corner side of the semiconductor pellet 1, Wire bonding can be performed without the above problems.

図４（Ａ）、（Ｂ）及び図5はこの発明の第１の実施例の変形例の半導体ペレットを示す図である。なお、図４（Ａ）、（Ｂ）及び図5において図１（Ａ）、（Ｂ）及び図２と同一部分には同一符号を付してその説明を省略する。図４（Ａ）に示すように、第１の実施例の変形例では、第１の電極パッド３２が半導体ペレットの中心方向に向かう辺を長辺とした長方形に形成されている。その他の構成は第１の実施例と同一である。なお、第１の電極パッド３２の短辺は第１の実施例で用いた長さＳ１である。   FIGS. 4A, 4B and 5 are views showing a semiconductor pellet of a modification of the first embodiment of the present invention. 4A, 4B, and 5, the same parts as those in FIGS. 1A, 1B, and 2 are denoted by the same reference numerals, and the description thereof is omitted. As shown in FIG. 4A, in the modification of the first embodiment, the first electrode pad 32 is formed in a rectangle having a long side extending toward the center of the semiconductor pellet. Other configurations are the same as those of the first embodiment. The short side of the first electrode pad 32 is the length S1 used in the first embodiment.

第１の実施例の変形例では、第１の実施例の効果に加えて第１の電極パッド３２でのワイヤボンディングの位置を半導体ペレットの中心方向（またはその逆方向）にずらすことができるため、より大きな自由度をもってワイヤボンディングすることが可能になる。   In the modified example of the first embodiment, in addition to the effects of the first embodiment, the position of wire bonding at the first electrode pad 32 can be shifted in the center direction of the semiconductor pellet (or the opposite direction). It becomes possible to perform wire bonding with a greater degree of freedom.

図６（Ａ）、（Ｂ）及び図７（Ａ）、（Ｂ）はこの発明の第２の実施例の半導体ペレットを示す図である。なお、図６（Ａ）、（Ｂ）及び図７（Ａ）において図１（Ａ）、（Ｂ）及び図２と同一部分には同一符号を付してその説明を省略する。   6A, 6B, 7A, and 7B are views showing a semiconductor pellet of a second embodiment of the present invention. 6 (A), (B), and FIG. 7 (A), the same parts as those in FIGS. 1 (A), (B), and FIG.

図６（Ａ）に示すように、第２の実施例の半導体ペレットには、第２の電極パッド３の外側にダミー電極パッド４０が列状に形成されている。このダミー電極パッド４０は図６（Ｂ）に示すように領域Ａにおいては第２の電極パッド３に一致した外側の位置に形成されている。領域Ｂにおいては、図７（Ａ）に示すようにダミー電極パッド４０は第２電極パッド３から半導体ペレット１の角部側にややずれて形成されている。このダミー電極パッド４０には円柱状の金属層４１が設けられている。この金属層４１はワイヤボンディングの金属球と同様に物理的に押し付けられて設けられている。なお、図７（Ｂ）に示すように金属層４１の厚さｄは３〜１０μｍに形成されている。   As shown in FIG. 6A, dummy electrode pads 40 are formed in rows on the outside of the second electrode pads 3 in the semiconductor pellet of the second embodiment. As shown in FIG. 6B, the dummy electrode pad 40 is formed at an outer position corresponding to the second electrode pad 3 in the region A. In the region B, as shown in FIG. 7A, the dummy electrode pad 40 is formed slightly shifted from the second electrode pad 3 toward the corner of the semiconductor pellet 1. The dummy electrode pad 40 is provided with a cylindrical metal layer 41. This metal layer 41 is physically pressed and provided in the same manner as a metal ball for wire bonding. As shown in FIG. 7B, the thickness d of the metal layer 41 is 3 to 10 μm.

半導体ペレット１はその表面が樹脂で覆われる。一般的に半導体ペレットを樹脂とは熱膨張係数に差がある。樹脂は熱収縮によりワイヤボンディングされた金属球と第１及び第２電極パッド２、３の接続界面にストレスを与える。金属層４１はこの熱収縮によるストレスを低減するために設けたものである。熱収縮によるストレスはワイヤボンディングされた金属球ばかりではなく金属層４１にも与えられる。熱収縮によるストレスは半導体ペレットの外側に行くほど強くなる。金属層４１は金属球より外側に設けられているため、熱収縮によるストレスは金属層４１がその大部分を受け、結果としてワイヤボンディングされた金属球が受けるストレスは低減されるのである。
以上説明したように第２の実施例の半導体ペレットでは第１の実施例で得た効果に加えて、ワイヤボンディングされた金属球が受けるストレスは低減されるという効果がある。 The surface of the semiconductor pellet 1 is covered with resin. Generally, semiconductor pellets are different from resins in thermal expansion coefficient. The resin gives stress to the connection interface between the metal sphere wire-bonded and the first and second electrode pads 2 and 3 by heat shrinkage. The metal layer 41 is provided in order to reduce the stress due to this heat shrinkage. Stress due to heat shrinkage is applied not only to the wire-bonded metal sphere but also to the metal layer 41. The stress due to thermal contraction increases as it goes outside the semiconductor pellet. Since the metal layer 41 is provided on the outer side of the metal sphere, the stress due to heat shrinkage is mostly received by the metal layer 41, and as a result, the stress received by the wire-bonded metal sphere is reduced.
As described above, in the semiconductor pellet of the second embodiment, in addition to the effect obtained in the first embodiment, there is an effect that the stress received by the wire-bonded metal sphere is reduced.

図８（Ａ）、（Ｂ）及び図９（Ａ）、（Ｂ）はこの発明の第２の実施例の変形例の半導体ペレットを示す図である。なお、図８（Ａ）、（Ｂ）及び図９（Ａ）、（Ｂ）において図６（Ａ）、（Ｂ）及び図７（Ａ）、（Ｂ）と同一部分には同一符号を付してその説明を省略する。   FIGS. 8A, 8B, 9A, and 9B are views showing a semiconductor pellet according to a modification of the second embodiment of the present invention. 8 (A), (B) and FIGS. 9 (A), (B), the same parts as those in FIGS. 6 (A), (B) and FIGS. 7 (A), (B) are denoted by the same reference numerals. Therefore, the description is omitted.

図８（Ａ）に示すように、第２の実施例の変形例の半導体ペレットには、第２の実施例と同様に第２の電極パッド３の外側にダミー電極パッド４０が列状に形成されている。このダミー電極パッド４０上には同一形状の金属層５１が設けられている。この金属層５１は蒸着またはめっきなどの手段でダミー電極パッド４０上に設けられている。金属層５１の膜厚は第２の実施例と同様に３〜１０μｍである。
この第２の実施例の変形例では、第２の実施例で得た効果に加えて、金属層が蒸着またはめっきという手段で設けられているため生産が短時間で容易にできるという効果がある。 As shown in FIG. 8A, in the semiconductor pellet of the modification of the second embodiment, dummy electrode pads 40 are formed in a row outside the second electrode pad 3 as in the second embodiment. Has been. A metal layer 51 having the same shape is provided on the dummy electrode pad 40. The metal layer 51 is provided on the dummy electrode pad 40 by means such as vapor deposition or plating. The film thickness of the metal layer 51 is 3 to 10 μm as in the second embodiment.
In the modification of the second embodiment, in addition to the effect obtained in the second embodiment, the metal layer is provided by means of vapor deposition or plating, so that the production can be easily performed in a short time. .

図１０（Ａ）、（Ｂ）及び図１１（Ａ）、（Ｂ）はこの発明の第３の実施例の半導体ペレットを示す図である。なお、図１０（Ａ）、（Ｂ）及び図１１（Ａ）、（Ｂ）において図８（Ａ）、（Ｂ）及び図９（Ａ）、（Ｂ）と同一部分には同一符号を付してその説明を省略する。   FIGS. 10A, 10B, 11A, and 11B are views showing a semiconductor pellet of a third embodiment of the present invention. 10 (A), 10 (B) and 11 (A), 11 (B), the same parts as those in FIGS. 8 (A), 8 (B), 9 (A), 9 (B) are denoted by the same reference numerals. Therefore, the description is omitted.

第３の実施例の半導体ペレットでは、図１０（Ａ）に示すように、第２の電極パッド３とその外側に設けられたダミー電極パッド４０とが配線６４で電気的に接続されている。その他の点については第２の実施例の変形例と同じである。   In the semiconductor pellet of the third embodiment, as shown in FIG. 10A, the second electrode pad 3 and the dummy electrode pad 40 provided outside the second electrode pad 3 are electrically connected by a wiring 64. The other points are the same as the modification of the second embodiment.

金属層５１が設けられたダミー電極パッド４０は第２の電極パッド３と電気的に接続されているため電気動作試験をするための電極パッドとして利用可能である。電気動作試験は、試験用端子を電極パッドに接触させて行うプロービングと呼ばれる方法が良く用いられている。試験用端子をその後ボンディングが行われる第２の電極パッド３で行った場合、パッドに試験用端子が接触することにより傷がつき信頼性上問題になる可能性があった。しかし第３の実施例の半導体ペレットによれば第２の電極パッドの電気動作試験においてはダミー電極パッド４０に設けられた金属層５１に試験用端子を接触させて行う。金属層５１は３〜１０μｍの厚さがあるため、試験用端子の接触による傷が金属層５１についたとしても特に問題にはならない。また、試験用端子の高さ方向の位置合わせ精度に数μｍの余裕ができる。これにより試験端子の高さ方向の位置合わせ時間を短縮できる効果もある。   Since the dummy electrode pad 40 provided with the metal layer 51 is electrically connected to the second electrode pad 3, it can be used as an electrode pad for conducting an electric operation test. In the electric operation test, a method called probing which is performed by bringing a test terminal into contact with an electrode pad is often used. When the test terminal is used for the second electrode pad 3 to be bonded thereafter, the test terminal may be damaged by contact with the pad, which may cause a problem in reliability. However, according to the semiconductor pellet of the third embodiment, the electrical operation test of the second electrode pad is performed by bringing the test terminal into contact with the metal layer 51 provided on the dummy electrode pad 40. Since the metal layer 51 has a thickness of 3 to 10 μm, there is no particular problem even if the metal layer 51 is damaged by contact with the test terminals. Moreover, a margin of several μm can be provided for the alignment accuracy in the height direction of the test terminals. This also has the effect of shortening the alignment time of the test terminal in the height direction.

図１２（Ａ）、（Ｂ）及び図１３（Ａ）、（Ｂ）はこの発明の第３の実施例の変形例の半導体ペレットを示す図である。なお、図１２（Ａ）、（Ｂ）及び図１３（Ａ）、（Ｂ）において図１０（Ａ）、（Ｂ）及び図１１（Ａ）、（Ｂ）と同一部分には同一符号を付してその説明を省略する。
第３の実施例の変形例の半導体ペレットでは、図１２（Ａ）に示すように、第１の電極パッド２の内側に第２のダミー電極パッド７０を設けている。第２のダミー電極パッド７０は配線４によって第１の電極パッド２と電気的に接続されている。第２のダミー電極パッド７０上にはダミー電極パッド４０と同様に金属層７１が設けられている。金属層７１の厚さ及び形成方法は金属層５１と同様であるのでその説明は省略する。 12 (A), 12 (B), 13 (A), and 13 (B) are views showing a semiconductor pellet of a modification of the third embodiment of the present invention. 12 (A), (B) and FIGS. 13 (A), (B), the same parts as those in FIGS. 10 (A), (B) and FIGS. 11 (A), (B) are denoted by the same reference numerals. Therefore, the explanation is omitted.
In the semiconductor pellet of the modification of the third embodiment, a second dummy electrode pad 70 is provided inside the first electrode pad 2 as shown in FIG. The second dummy electrode pad 70 is electrically connected to the first electrode pad 2 by the wiring 4. Similar to the dummy electrode pad 40, a metal layer 71 is provided on the second dummy electrode pad 70. Since the thickness and formation method of the metal layer 71 are the same as those of the metal layer 51, the description thereof is omitted.

金属層７１が設けられた第２のダミー電極パッド７０はダミー電極パッド４０と同様に電気動作試験をするための電極パッドとして利用可能である。
第３の実施例の変形例では、第３の実施例の効果に加えて、第１の電極パッド２の電気動作試験においても第２の電極パッドの電気動作試験と同様な効果が得られるという効果がある。 The second dummy electrode pad 70 provided with the metal layer 71 can be used as an electrode pad for performing an electrical operation test in the same manner as the dummy electrode pad 40.
In the modified example of the third embodiment, in addition to the effect of the third embodiment, the same effect as the electrical operation test of the second electrode pad can be obtained in the electrical operation test of the first electrode pad 2. effective.

図１４（Ａ）、（Ｂ）及び図１５（Ａ）、（Ｂ）はこの発明の第４の実施例の半導体ペレットを示す図である。なお、図１４（Ａ）、（Ｂ）及び図１５（Ａ）において図１（Ａ）、（Ｂ）及び図２と同一部分には同一符号を付してその説明を省略する。
第４の実施例の半導体ペレットでは、図１４（Ａ）に示すように、第１の電極パッド２の内側に第３の電極パッド８０が設けている。第３の電極パッド８０は配線４によって第２の電極パッド３と電気的に接続されている。その他の点については第１の実施例の半導体ペレットと同様であるのでその説明は省略する。 14A, 14B, 15A, and 15B are views showing a semiconductor pellet according to a fourth embodiment of the present invention. In FIGS. 14A, 14B, and 15A, the same portions as those in FIGS. 1A, 1B, and 2 are denoted by the same reference numerals, and description thereof is omitted.
In the semiconductor pellet of the fourth embodiment, a third electrode pad 80 is provided inside the first electrode pad 2 as shown in FIG. The third electrode pad 80 is electrically connected to the second electrode pad 3 by the wiring 4. Since other points are the same as those of the semiconductor pellet of the first embodiment, the description thereof is omitted.

図１５（Ｂ）は第４の実施例の半導体ペレットを外部端子にワイヤボンディングした状態を示す断面図である。図１５（Ｂ）に示すように、ボールグリッドアレイなどのパッケージ構造に用いる外部端子８１では高さの異なる端子８２、８３が設けられている場合がある。このような外部端子８１と半導体ペレット１とをワイヤボンディングするとき、半導体ペレット１の外側の第２の電極パッド３は外部端子８１の低い位置の端子８２と低い軌道の金属細線８４にてワイヤボンディングされる。また、半導体ペレット１の内側の第１の電極パッド２は外部端子８１の高い位置の端子８３と高い軌道の金属細線８５にてワイヤボンディングされる。このように第２の電極パッド３は低い位置の端子８２と、第１の電極パッド２は高い位置の端子８３と接続されるようそれぞれが割り当てられるが、外部端子８１におけるそれぞれの端子の位置関係や配線などの都合により、第２の電極パッド３が高い位置の端子８３と接続しなければならない場合もある。このような場合は、図１５（Ｂ）に示すように第３の電極パッド８０を高い位置の端子８３と高い軌道の金属細線８５にてワイヤボンディングする。   FIG. 15B is a cross-sectional view showing a state where the semiconductor pellet of the fourth embodiment is wire bonded to the external terminal. As shown in FIG. 15B, the external terminals 81 used for a package structure such as a ball grid array may be provided with terminals 82 and 83 having different heights. When such an external terminal 81 and the semiconductor pellet 1 are wire-bonded, the second electrode pad 3 outside the semiconductor pellet 1 is wire-bonded with a terminal 82 at a low position of the external terminal 81 and a metal wire 84 with a low track. Is done. The first electrode pad 2 inside the semiconductor pellet 1 is wire-bonded with a terminal 83 at a high position of the external terminal 81 and a metal wire 85 with a high track. As described above, the second electrode pad 3 is assigned to be connected to the terminal 82 at the lower position and the first electrode pad 2 is connected to the terminal 83 at the higher position. In some cases, the second electrode pad 3 needs to be connected to the terminal 83 at a higher position for convenience of wiring or wiring. In such a case, as shown in FIG. 15B, the third electrode pad 80 is wire-bonded with a high-position terminal 83 and a metal wire 85 with a high track.

以上説明したように第４の実施例によれば、半導体ペレットの電極パッドから段差のある外部端子へワイヤボンディングするとき、半導体ペレットの外側の電極パッド３を高い位置の端子と接続しなければならない場合でも金属細線間のショートを防止することができる。   As described above, according to the fourth embodiment, when wire bonding is performed from an electrode pad of a semiconductor pellet to an external terminal having a step, the electrode pad 3 outside the semiconductor pellet must be connected to a terminal at a higher position. Even in this case, it is possible to prevent a short circuit between the fine metal wires.

第１の実施例の半導体ペレットを示す図である。It is a figure which shows the semiconductor pellet of a 1st Example. 第１の実施例の半導体ペレットの一部を示す図である。It is a figure which shows a part of semiconductor pellet of a 1st Example. 第１の実施例の半導体ペレットの領域の設定限界を説明する図である。It is a figure explaining the setting limit of the area | region of the semiconductor pellet of a 1st Example. 第１の実施例の変形例の半導体ペレットを示す図である。It is a figure which shows the semiconductor pellet of the modification of a 1st Example. 第１の実施例の変形例の半導体ペレットの一部を示す図である。It is a figure which shows a part of semiconductor pellet of the modification of a 1st Example. 第２の実施例の半導体ペレットを示す図である。It is a figure which shows the semiconductor pellet of a 2nd Example. 第２の実施例の半導体ペレットの一部を示す図である。It is a figure which shows a part of semiconductor pellet of a 2nd Example. 第２の実施例の変形例の半導体ペレットを示す図である。It is a figure which shows the semiconductor pellet of the modification of a 2nd Example. 第２の実施例の変形例の半導体ペレットの一部を示す図である。It is a figure which shows a part of semiconductor pellet of the modification of a 2nd Example. 第３の実施例の半導体ペレットを示す図である。It is a figure which shows the semiconductor pellet of a 3rd Example. 第３の実施例の半導体ペレットの一部を示す図である。It is a figure which shows a part of semiconductor pellet of a 3rd Example. 第３の実施例の変形例の半導体ペレットを示す図である。It is a figure which shows the semiconductor pellet of the modification of a 3rd Example. 第３の実施例の変形例の半導体ペレットの一部を示す図である。It is a figure which shows a part of semiconductor pellet of the modification of a 3rd Example. 第４の実施例の半導体ペレットを示す図である。It is a figure which shows the semiconductor pellet of a 4th Example. 第４の実施例の半導体ペレットの一部を示す図である。It is a figure which shows a part of semiconductor pellet of a 4th Example.

符号の説明Explanation of symbols

１・・・半導体ペレット
２・・・第１の電極パッド
３・・・第２の電極パッド
４・・・配線 DESCRIPTION OF SYMBOLS 1 ... Semiconductor pellet 2 ... 1st electrode pad 3 ... 2nd electrode pad 4 ... Wiring

Claims (5)

中央部に集積回路が形成され、周辺部に複数の第１の電極パッドが列状に配置され、複数の第２の電極パッドが前記第１の電極パッドより外側で前記第１の電極パッドの列と並行に列状に配置される半導体ペレットにおいて、
前記半導体ペレットの辺に沿った前記第２の電極パッドの辺の長さは、前記半導体ペレットの辺に沿った前記第１の電極パッドの辺の長さよりも長く、
複数の前記第１の電極パッドの各々は隣り合う他の第１の電極パッドと所定の間隔離間されて配置され、
複数の前記第２の電極パッドには、その中心が第１の電極パッド間の中央に位置するように配置されたもの、第１の電極パッド間の中央から前記半導体ペレットの角部よりにずれて位置するよう配置されたものとを含み、
複数の前記第２の電極パッドの各々は対応する第１の電極パッド間に設けられる配線によって前記集積回路と電気的に接続されること、
を特徴とする半導体ペレット。 An integrated circuit is formed in the central portion, a plurality of first electrode pads are arranged in a row in the peripheral portion, and a plurality of second electrode pads are outside the first electrode pads and are formed on the first electrode pads. In semiconductor pellets arranged in a row parallel to the rows,
The length of the side of the second electrode pad along the side of the semiconductor pellet is longer than the length of the side of the first electrode pad along the side of the semiconductor pellet,
Each of the plurality of first electrode pads is disposed at a predetermined distance from another adjacent first electrode pad,
The plurality of second electrode pads are arranged so that their centers are located in the center between the first electrode pads, and are shifted from the center between the first electrode pads from the corner of the semiconductor pellet. Arranged to be located
Each of the plurality of second electrode pads is electrically connected to the integrated circuit by a wiring provided between the corresponding first electrode pads;
A semiconductor pellet characterized by. 前記第１の電極パッドの各々は所定の長さの辺からなる略正方形状であり、前記第２の電極パッドの各々は短辺の長さが前記所定の長さである長方形状であることを特徴とする請求項１記載の半導体ペレット。   Each of the first electrode pads has a substantially square shape having sides having a predetermined length, and each of the second electrode pads has a rectangular shape having a short side having the predetermined length. The semiconductor pellet according to claim 1. 請求項１または請求項２記載の前記半導体ペレットと外部端子とを有し、前記第１及び前記第２の電極パッドは該外部端子とワイヤボンディングにて電気的に接続されてなることを特徴とする半導体装置。   The semiconductor pellet according to claim 1 or 2 and an external terminal, wherein the first and second electrode pads are electrically connected to the external terminal by wire bonding. Semiconductor device. 請求項１または請求項２記載の前記半導体ペレットと基板とを有し、前記第１及び前記第２の電極パッドは該基板とワイヤボンディングにて電気的に接続されてなることを特徴とする半導体装置。   3. A semiconductor comprising the semiconductor pellet according to claim 1 and a substrate, wherein the first and second electrode pads are electrically connected to the substrate by wire bonding. apparatus. 請求項３または請求項４記載の半導体装置において、前記第１の電極パッドにワイヤボンディングにて接続される金属細線の軌道の高さは前記第２の電極パッドにワイヤボンディングにて接続される金属細線の軌道の高さと異なることを特徴とする半導体装置。   5. The semiconductor device according to claim 3, wherein a height of a track of a metal thin wire connected to the first electrode pad by wire bonding is a metal connected to the second electrode pad by wire bonding. A semiconductor device characterized by being different from a height of a fine wire orbit.
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