TW201807835A - Solar battery and method of manufacturing solar battery - Google Patents

Solar battery and method of manufacturing solar battery Download PDF

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TW201807835A
TW201807835A TW106123190A TW106123190A TW201807835A TW 201807835 A TW201807835 A TW 201807835A TW 106123190 A TW106123190 A TW 106123190A TW 106123190 A TW106123190 A TW 106123190A TW 201807835 A TW201807835 A TW 201807835A
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bus bar
electrode
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solar cell
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TWI637528B (en
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上迫浩一
新井傑也
菅原美愛子
小林賢一
小宮秀利
松井正五
横山周平
錦織潤
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亞特比目股份有限公司
農工大Tlo股份有限公司
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • C03C4/00Compositions for glass with special properties
    • C03C4/14Compositions for glass with special properties for electro-conductive glass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L31/02005Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier
    • H01L31/02008Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules
    • H01L31/0201Arrangements for conducting electric current to or from the device in operations for device characterised by at least one potential jump barrier or surface barrier for solar cells or solar cell modules comprising specially adapted module bus-bar structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02P70/00Climate change mitigation technologies in the production process for final industrial or consumer products
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Abstract

The present invention relates to a solar battery and a method of manufacturing solar battery, the objectives of the invention are to eliminate or reduce the use amount of silver, and reduce or eliminate the use amount of lead, and by performing upper layer firing in addition to lower firing to increase the efficiency of the solar cell. The present invention comprises: forming a finger electrode containing silver and lead on an insulating film, and furthermore firing after a bus bar electrode is formed thereon, during firing, by the reaction of silver and lead contained in the finger electrode, an electric conductive path (lower firing) is formed between the region and the finger electrode by penetrating a thin film under the finger electrode which is the insulating film, further, during firing, by the reaction of silver and lead contained in the finger electrode, an electric conductive path (upper firing) is formed exposed on the bus bar electrode by penetrating a layer above the finger electrode which is the bus bar electrode.

Description

太陽電池及太陽電池之製造方法 Solar cell and solar cell manufacturing method

本發明係有關於一種太陽電池及太陽電池之製造方法,該太陽電池係在基板上製作有照射光線等時會生成高電子濃度的區域,且在該區域上形成有會穿透光等之絕緣膜,並且在絕緣膜上形成有指狀電極(finger electrode),該指狀電極係形成從該區域取出電子的取出口,而且具有電性連接複數個指狀電極而將電子取出至外部之匯流排電極(bus-bar electrode)者。 The present invention relates to a solar cell and a solar cell manufacturing method, wherein a solar cell is formed with a region having a high electron concentration when irradiated with light or the like, and an insulating layer that penetrates light or the like is formed on the region. a film, and a finger electrode formed on the insulating film, the finger electrode forming a take-out port for taking out electrons from the region, and having a plurality of finger electrodes electrically connected to the external confluence Bus-bar electrode.

先前,利用可再生能源之一之太陽電池,係以20世紀的主角之半導體技術作為基礎而進行其開發。環為影響人類生存之全球級的重要開發。其開發的課題不僅只有將太陽光轉換電能之效率,亦須一邊面對減低製造成本及無公害的課題而一邊進行。就實現該等課題之努力而言,特別是重視的是減低或消除使用在電極之銀(Ag)和鉛(Pb)的使用量。 Previously, solar cells using one of the renewable energy sources were developed based on the semiconductor technology of the protagonist of the 20th century. The ring is an important development at the global level that affects human survival. The subject of its development is not only the efficiency of converting sunlight into electrical energy, but also the problem of reducing manufacturing costs and pollution-free issues. In terms of efforts to achieve these problems, particular emphasis has been placed on reducing or eliminating the amount of silver (Ag) and lead (Pb) used in the electrodes.

通常,太陽電池的構造如第9圖(a)的平面圖及(b)的剖面圖顯示,係由下列各要素所構成:N型/P型 的矽基板43,其係將太陽光能轉換成為電能;氮化矽膜45,其係防止矽基板43的表面之反射且為絕緣體薄膜;指狀電極42,其係將在矽基板43中所產生的電子取出;匯流排電極41,其係將在指狀電極42所取出的電子集中;及引出引線電極47,其係將集中在匯流排電極41之電子取出至外部。 Generally, the structure of the solar cell is as shown in the plan view of Fig. 9(a) and the cross-sectional view of (b), and is composed of the following elements: N type/P type The ruthenium substrate 43 converts solar energy into electrical energy; the tantalum nitride film 45 prevents reflection of the surface of the ruthenium substrate 43 and is an insulator film; the finger electrode 42 which is to be placed in the ruthenium substrate 43 The generated electrons are taken out; the bus bar electrode 41 concentrates the electrons taken out at the finger electrodes 42; and the lead electrode 47 is taken out, and the electrons concentrated on the bus bar electrode 41 are taken out to the outside.

其中,在匯流排電極41及指狀電極42係使用銀及鉛(鉛玻璃),期望能夠消除或減低該銀的使用量,而且進一步減低或消除鉛(鉛玻璃)的使用量而成為低成本且無公害。 Among them, silver and lead (lead glass) are used for the bus bar electrode 41 and the finger electrode 42, and it is desirable to eliminate or reduce the amount of silver used, and to further reduce or eliminate the amount of lead (lead glass) used, thereby achieving low cost. And no pollution.

上述之先前第9圖的太陽電池之構成要素之中,係將銀及鉛(作為黏結劑的鉛玻璃)使用在指狀電極42等,而有消除或減低該銀的使用量、及減低或消除鉛(鉛玻璃)的使用量,以減低太陽電池的製造成本且成為無公害之課題。 Among the constituent elements of the solar cell of the above-mentioned ninth embodiment, silver and lead (lead glass as a binder) are used for the finger electrode 42 or the like, and the amount of use and reduction of the silver is eliminated or reduced. Eliminating the use of lead (lead glass) to reduce the manufacturing cost of solar cells and becoming a pollution-free issue.

又,第9圖(b)係將含有銀、鉛玻璃之指狀電極42燒製,而形成有貫穿氮化矽膜45之導電性通路(稱為鍛燒(firing)),並將電子從N/P擴散層44取出,將此集中在匯流排電極41而取出至外部。有將該等電子的取出效率提高,使太陽電池的效率進一步提升之課題。 Further, in Fig. 9, (b), the finger electrode 42 containing silver or lead glass is fired, and a conductive path (referred to as firing) penetrating through the tantalum nitride film 45 is formed, and electrons are removed from The N/P diffusion layer 44 is taken out, and this is concentrated on the bus bar electrode 41 and taken out to the outside. There is a problem that the extraction efficiency of these electrons is improved, and the efficiency of the solar cell is further improved.

本發明人等等,在膏狀物使用後述的NTA 玻璃100%而而實驗性地製造匯流排電極,結果發現,能夠製作出具有與使用上述以往的銀膏而製造匯流排電極的情況為同等級或較優異的特性之太陽電池(參照日本特願2015-180720號等)。 The present inventors, etc., use the NTA described later in the paste. When the bus bar electrode is manufactured experimentally by the glass, it is found that it is possible to produce a solar cell having the same level or superior characteristics as the case where the bus bar electrode is manufactured by using the above-described conventional silver paste (refer to Japanese wish) 2015-180720, etc.).

而且,在基板上製作有照射光線等的時會生成高電子濃度的區域,且在該區域上形成有穿透光線等之絕緣膜,並且在該絕緣膜上形成有指狀電極,該指狀電極係形成從該區域取出電子之取出口,而且使用100%至0%以上的上述NTA玻璃,製作成電性連接複數個指狀電極而將電子取出至外部之匯流排電極,以將該等統整而整批燒製進行鍛燒,結果發現,除了形成有以往之藉由鍛燒所得之從指狀電極至下層的高電子濃度區域之導電性通路(稱為下層鍛燒)以外,而且亦能夠形成有從指狀電極貫穿上層的匯流排電極而露出的導電性通路(在該導電性通路焊接帶狀的引出引線)(以下稱為上層鍛燒)(參照後述之第6圖、第8圖等)。 Further, when a light beam or the like is formed on the substrate, a region having a high electron concentration is generated, and an insulating film that penetrates light or the like is formed on the substrate, and a finger electrode is formed on the insulating film. The electrode system forms an outlet for taking out electrons from the region, and 100% to 0% or more of the NTA glass is used to electrically connect a plurality of finger electrodes to take out electrons to the external bus bar electrode. The whole batch was fired and calcined, and it was found that, besides forming a conductive path (referred to as lower layer calcination) of a high electron concentration region from the finger electrode to the lower layer obtained by calcination in the past, It is also possible to form a conductive path (the lead wire in the shape of a conductive strip in the conductive path) which is exposed from the bus bar electrode of the upper layer through the finger electrode (hereinafter referred to as the upper layer calcination) (see FIG. 6 and FIG. 8 maps, etc.).

本發明係基於該等發現,為了消除或減低銀的使用量、及減低或消除鉛(鉛玻璃)的使用量,係在形成作為太陽電池的構成要素之匯流排電極時,使用釩酸鹽玻璃(以下,稱為導電性的NTA玻璃、“NTA”為註冊商標5009023號))製作膏狀物並進行燒製,以消除或減低銀及鉛(鉛玻璃)的使用量,而且進一步進行上述下層鍛燒及上層鍛燒,藉此能夠提高電子引出效率而使太陽電池的效率提升。 The present invention is based on the discovery that in order to eliminate or reduce the amount of silver used and to reduce or eliminate the amount of lead (lead glass) used, vanadate glass is used in forming a bus bar electrode which is a constituent element of a solar cell. (hereinafter, referred to as conductive NTA glass, "NTA" is registered trademark No. 5009023)), a paste is prepared and fired to eliminate or reduce the amount of silver and lead (lead glass) used, and further the lower layer is performed. The calcination and the upper calcination can increase the efficiency of electron extraction and increase the efficiency of the solar cell.

因此,本發明之太陽電池,係在基板上製作有照射光線等的時會生成高電子濃度的區域,且在該區域上形成有穿透光線等之絕緣膜,並且在該絕緣膜上形成有指狀電極,該指狀電極係形成從該區域取出電子之取出口,而且形成有電性連接複數個指狀電極而將電子取出至外部之匯流排電極,其中,在絕緣膜上形成含有銀及鉛之指狀電極,而且在其上方形成匯流排電極之後,進行整批燒製,在整批燒製時藉由指狀電極所含有的銀及鉛之作用,貫穿指狀電極下的薄膜亦即絕緣膜而在該區域與指狀電極之間形成有導電性通路(稱為下層鍛燒),而且進一步在燒製時藉由指狀電極所含有的銀及鉛之作用,貫穿指狀電極上的層亦即匯流排電極而形成有在匯流排電極上露出之導電性通路(稱為上層鍛燒)。 Therefore, the solar cell of the present invention is a region in which a high electron concentration is generated when an irradiation light or the like is formed on a substrate, and an insulating film that penetrates light or the like is formed on the region, and a film is formed on the insulating film. a finger electrode forming a take-out port for taking out electrons from the region, and forming a bus bar electrode electrically connecting a plurality of finger electrodes to take out electrons to the outside, wherein silver is formed on the insulating film And a finger electrode of lead, and after forming a bus bar electrode thereon, the whole batch is fired, and the film under the finger electrode is penetrated by the action of silver and lead contained in the finger electrode during the whole batch firing That is, an insulating film forms a conductive path between the region and the finger electrode (referred to as a lower layer calcination), and further penetrates the finger by the action of silver and lead contained in the finger electrode during firing. The layer on the electrode, that is, the bus bar electrode, is formed with a conductive path (referred to as upper layer calcination) exposed on the bus bar electrode.

此時,將下層鍛燒設為固相中的鍛燒,將上層鍛燒設為液相中的鍛燒,且相較於前者的導電性通路之長度,使後者的導電性通路之長度大幅度增長。 At this time, the lower calcination is calcination in the solid phase, and the upper calcination is calcination in the liquid phase, and the length of the latter conductivity path is made larger than the length of the former electroconductive passage. The increase in magnitude.

又,除了形成有貫穿匯流排電極而在匯流排電極上露出的導電性通路以外,在匯流排電極上形成有導電層時,使導電性通路形成在導電層。 Further, in addition to forming a conductive path that is exposed through the bus bar electrode and exposed on the bus bar electrode, when a conductive layer is formed on the bus bar electrode, a conductive path is formed in the conductive layer.

而且,使帶狀的引線焊接在露出的導電性通路或導電層。 Further, the strip-shaped leads are soldered to the exposed conductive via or conductive layer.

又,作為導電性的匯流排電極,係將導電性玻璃設為重量比100%至0%以上,且將其餘部分設為銀。 Further, as the conductive bus bar electrode, the conductive glass is set to have a weight ratio of 100% to 0% or more, and the remaining portion is made of silver.

而且,導電性玻璃係設為至少含有釩或釩 及鋇之釩酸(vanadic acid)玻璃。 Moreover, the conductive glass is set to contain at least vanadium or vanadium And vanadic acid glass.

又,燒製導電性玻璃的步驟之時間,最長設為1分鐘以內且為1秒以上。 Moreover, the time of the step of firing the conductive glass is up to 1 minute and is 1 second or longer.

而且,因為燒製導電性玻璃的步驟之溫度,在溫度太低時會無法進行下層鍛燒,在溫度太高時,在燒製而冷卻後,導電性通路會被匯流排電極中的導電性玻璃覆蓋而使上層鍛燒劣化,所以要設為該等之間的範圍內之溫度。 Moreover, because of the temperature of the step of firing the conductive glass, the lower layer of calcination cannot be performed when the temperature is too low, and when the temperature is too high, the conductive path is electrically conductive in the bus bar electrode after being fired and cooled. The glass is covered to deteriorate the upper layer of calcination, so it is set to a temperature within the range between the two.

又,導電性玻璃係設為無Pb。 Moreover, the conductive glass system was made to have no Pb.

本發明係如上所述,除了形成有藉由鍛燒所得之從指狀電極至下層的高電子濃度區域之導電性通路(稱為下層鍛燒)以外,而且亦形成有藉由從指狀電極貫穿上層的匯流排電極而露出的導電性通路(上層鍛燒),藉此能夠提高電子從高電子濃度區域取出至外部的效率,且將NTA玻璃使用在匯流排電極,而能夠消除或減低銀的使用量、及減低或消除鉛(鉛玻璃)的使用量。 The present invention is as described above, except that a conductive path (referred to as lower layer calcination) in which a high electron concentration region from a finger electrode to a lower layer is obtained by calcination is formed, and also formed by a finger electrode The conductive path (upper layer calcination) exposed through the upper bus bar electrode can improve the efficiency of taking out electrons from the high electron concentration region to the outside, and use NTA glass on the bus bar electrode to eliminate or reduce silver. Use, and reduce or eliminate the use of lead (lead glass).

1‧‧‧矽基板 1‧‧‧矽 substrate

2‧‧‧鋁電極 2‧‧‧Aluminum electrode

3‧‧‧氮化膜(絕緣膜) 3‧‧‧ nitride film (insulation film)

4‧‧‧指狀電極 4‧‧‧ finger electrodes

5‧‧‧匯流排電極 5‧‧‧ Bus bar electrode

6‧‧‧引線 6‧‧‧ lead

11‧‧‧N型濃度較高的區域 11‧‧‧N-concentrated areas

12‧‧‧P型(電洞) 12‧‧‧P type (hole)

41‧‧‧下層鍛燒 41‧‧‧Underburning

42‧‧‧上層鍛燒 42‧‧‧Upper calcination

43‧‧‧矽基板 43‧‧‧矽 substrate

44‧‧‧N/P擴散層 44‧‧‧N/P diffusion layer

45‧‧‧氮化矽膜 45‧‧‧ nitride film

46‧‧‧背面電極(鋁層) 46‧‧‧Back electrode (aluminum layer)

47‧‧‧引出引線電極 47‧‧‧ lead wire electrode

S1至S11‧‧‧步驟 S1 to S11‧‧ steps

第1圖係本發明的一實施例構成圖。 Fig. 1 is a block diagram showing an embodiment of the present invention.

第2圖係本發明的主要部位說明圖。 Fig. 2 is an explanatory view of a main part of the present invention.

第3圖係本發明之使用NTA玻璃之太陽電池的製造步驟例。 Fig. 3 is a view showing an example of a manufacturing procedure of a solar cell using NTA glass of the present invention.

第4圖係本發明的測定例。 Fig. 4 is a measurement example of the present invention.

第5圖係本發明的匯流排電極之剖面觀察例(其1)。 Fig. 5 is a cross-sectional observation example (1) of the bus bar electrode of the present invention.

第6圖係本發明的匯流排電極之剖面觀察例(其2)。 Fig. 6 is a cross-sectional observation example (2) of the bus bar electrode of the present invention.

第7圖係本發明之使用匯流排電極之太陽電池的特性例。 Fig. 7 is a view showing an example of the characteristics of a solar cell using a bus bar electrode of the present invention.

第8圖係本發明的上層鍛燒之說明圖。 Fig. 8 is an explanatory view of the upper layer calcination of the present invention.

第9圖係先前技術的說明圖。 Fig. 9 is an explanatory view of the prior art.

[實施例1] [Example 1]

第1圖係顯示本發明的一實施例之構成圖。 Fig. 1 is a block diagram showing an embodiment of the present invention.

第1圖(a)係顯示燒製前的平面圖,第1圖(b)係顯示燒製前的剖面圖,第1圖(c)係顯示燒製後的剖面圖。 Fig. 1(a) shows a plan view before firing, Fig. 1(b) shows a cross-sectional view before firing, and Fig. 1(c) shows a cross-sectional view after firing.

在第1圖(a)、(b)之燒製前的平面圖及剖面圖中,矽基板1係公知的半導體矽基板。在與該矽基板11的氮化膜3接觸之部分,係形成有未圖示的高電子濃度區域(擴散摻雜層),該光電子濃度區域係藉由擴散摻雜等而在矽基板1上形成所需要的p型/n型層之公知的區域(層),在第1圖(b)中,從上面方向入射太陽光時,會在矽基板1產生電子(發電)且積蓄該電子之區域。在此,所積蓄的電子係透過電子取出口(第1圖(c)指狀電極(銀)4)而朝上方向被取出。 In the plan view and the cross-sectional view before firing in the first drawing (a) and (b), the ruthenium substrate 1 is a known semiconductor ruthenium substrate. A high electron concentration region (diffusion doping layer) (not shown) is formed in a portion in contact with the nitride film 3 of the germanium substrate 11, and the photoelectron concentration region is on the germanium substrate 1 by diffusion doping or the like. A well-known region (layer) of a p-type/n-type layer is formed. When the sunlight is incident from the upper direction in FIG. 1(b), electrons (power generation) are generated on the substrate 1 and the electrons are accumulated. region. Here, the accumulated electrons are taken out in the upward direction through the electron take-out port (Fig. 1 (c) finger electrode (silver) 4).

鋁電極(背面電極)2係形成在矽基板1的下面之公知的電極,其中,在圖示之燒製前為膏狀者(藉由整批燒製而成為第1圖(c)之導電性鋁電極2)。 The aluminum electrode (back surface electrode) 2 is a well-known electrode formed on the lower surface of the ruthenium substrate 1, and is a paste before the baking of the figure (the conductive material of the first figure (c) is fired by the whole batch. Aluminium electrode 2).

氮化膜(氮化矽膜)3係使太陽光通過(透 射),而且使匯流排電極5與高電子濃度區域電性絕緣之公知的膜,例如SiNx膜。藉由後述之整批燒製時的下層鍛燒,該氮化膜3係在固相中形成貫穿該氮化膜的導電性通路之膜(層)。 Nitride film (tantalum nitride film) 3 system allows sunlight to pass through A known film, such as a SiNx film, which electrically insulates the bus bar electrode 5 from the high electron concentration region. The nitride film 3 forms a film (layer) that penetrates the conductive path of the nitride film in the solid phase by the lower layer calcination in the entire batch firing described later.

指狀電極4,係透過形成在氮化膜3之電洞(hole)而將在高電子濃度區域中所積蓄的電子取出之口(指狀電極),在燒製前如圖所示,係在氮化膜3上印刷膏狀物且為被加熱乾燥(100°左右)的狀態者(進行整批燒製時成為如第1圖(c)所示)。 The finger electrode 4 is a port (finger electrode) that takes out electrons accumulated in a high electron concentration region through a hole formed in the nitride film 3, as shown in the figure before firing. When the paste is printed on the nitride film 3 and is heated and dried (about 100°) (when the whole batch is fired, it is as shown in Fig. 1(c)).

匯流排電極5係電性連接複數個電子取出口(複數個指狀電極4)之電極,在圖示之燒製前的狀態時,係將NTA玻璃的膏狀物作為匯流排電極5進行印刷(例如絲網印刷)且加熱乾燥,成為消除或削減Ag的使用量之電極。藉由整批燒製而成為作為匯流排電極5之導電性電極。 The bus bar electrode 5 electrically connects the electrodes of the plurality of electron take-out ports (the plurality of finger electrodes 4), and prints the paste of the NTA glass as the bus bar electrode 5 in the state before the illustration of the firing. (for example, screen printing) and heat drying, it is an electrode that eliminates or reduces the amount of Ag used. The conductive electrode serving as the bus bar electrode 5 is formed by firing in a batch.

如以上的第1圖(a)及(b)顯示,藉由將膏狀的鋁電極2、指狀電極4、匯流排電極5依照順序重複進行印刷/加熱乾燥,製造圖示的構造。然後如第1圖(c)所示,進行整批燒製而完成鋁電極2、指狀電極4、匯流排電極5。 As shown in the above-mentioned first drawings (a) and (b), the paste-shaped aluminum electrode 2, the finger electrode 4, and the bus bar electrode 5 are repeatedly subjected to printing/heat drying in order, thereby producing the structure shown in the drawings. Then, as shown in Fig. 1(c), the aluminum electrode 2, the finger electrode 4, and the bus bar electrode 5 are completed by batch firing.

在第1圖(c)中,指狀電極4係整批燒製後者,以100%至0%以上的NTA玻璃燒製本發明之匯流排電極5時,指狀電極4會藉由後述之液相中的上層鍛燒42,而形成(燒製)與匯流排電極5的上表面為相同高度的部分或穿出匯流排電極5的上表面的部分,能夠使高電子濃度區域中的電子經由該指狀電極4而直接流入焊接在匯流排 電極5上之未圖示的引線(使電子直接取出)。亦即,能夠藉由高電子濃度區域、指狀電極4、匯流排電極5、引線6的路徑1、及高電子濃度區域、指狀電極4、引線6的路徑2這二條路徑,而將高電子濃度區域中的電子(電流)經由引線6而取出至外部,結果能夠使高電子濃度區域與引線6之間的電阻值變得非常小,且減低損失,結果能夠使太陽電池的效率提升。此時,指狀電極4與高電子濃度區域及指狀電極4之間係藉由固相中的下層鍛燒41而形成導電性通路,且在形成穿出指狀電極4及匯流排電極5或穿過該匯流排電極5而露出的部分時係藉由液相中的上層鍛燒42而形成導電性通路。 In Fig. 1(c), the finger electrode 4 is fired in one batch, and when the bus bar electrode 5 of the present invention is fired from 100% to 0% or more of NTA glass, the finger electrode 4 is described later. The upper layer calcined in the liquid phase 42 and formed (fired) a portion having the same height as the upper surface of the bus bar electrode 5 or a portion penetrating the upper surface of the bus bar electrode 5, enabling electrons in a region of high electron concentration Directly flowing into the bus bar via the finger electrode 4 A lead (not shown) on the electrode 5 (the electrons are directly taken out). That is, it can be high by the high electron concentration region, the finger electrode 4, the bus bar electrode 5, the path 1 of the lead 6, the high electron concentration region, the finger electrode 4, and the path 2 of the lead 6 The electrons (current) in the electron concentration region are taken out to the outside via the lead 6. As a result, the resistance value between the high electron concentration region and the lead 6 can be made very small, and the loss can be reduced, and as a result, the efficiency of the solar cell can be improved. At this time, between the finger electrode 4 and the high electron concentration region and the finger electrode 4, a conductive path is formed by the lower layer calcination 41 in the solid phase, and the piercing finger electrode 4 and the bus bar electrode 5 are formed. Or a portion exposed through the bus bar electrode 5 is formed by the upper layer calcination 42 in the liquid phase to form a conductive path.

例如在一實驗結果,氮化膜3的厚度為60nm,匯流排電極5的印刷厚度為20μm,藉由整批燒製,‧氮化膜3為藉由固相中的下層鍛燒41所得者,‧由NTA玻璃所構成之匯流排電極5為液相中的上層鍛燒42,兩者的導電性通路的長度之比為60nm:20μm=1:333,為約330倍,藉由實驗能夠確認高速時液相中的上層鍛燒42。亦即,藉由實驗可以清楚明白,相較於固相中的下層鍛燒41,液相中的上層鍛燒42的導電性通路之長度能夠以數十倍至千倍左右的高速形成。 For example, in an experimental result, the thickness of the nitride film 3 is 60 nm, and the printing thickness of the bus bar electrode 5 is 20 μm. By firing in a batch, the nitride film 3 is obtained by calcining the lower layer 41 in the solid phase. ‧ The bus bar electrode 5 composed of NTA glass is the upper layer calcination 42 in the liquid phase, and the ratio of the length of the conductive paths of the two is 60 nm: 20 μm = 1:333, which is about 330 times, which can be experimentally The upper calcination 42 in the liquid phase at high speed was confirmed. That is, it is clear from experiments that the length of the conductive path of the upper calcination 42 in the liquid phase can be formed at a high speed of about several tens to several times as compared with the lower calcination 41 in the solid phase.

又,下層鍛燒41係藉由指狀電極4所含有之鉛(鉛玻璃)與銀的摻雜,而將下層的氮化膜4穿破約60nm而接觸電子濃度較高的部分。在此,下層鍛燒41過度進展時,因為銀的部分係從較高電子濃度的部分延伸至 少許下方之電子濃度較低的部分,致使太陽電池的轉換效率低落,因此必須藉由實驗來決定適當的下層鍛燒(整批燒製的溫度、時間(以1分鐘以下且1秒以上為佳))41。 Further, the lower layer sinter 41 is doped with lead (lead glass) contained in the finger electrode 4 and silver, and the lower nitride film 4 is punctured by about 60 nm to contact a portion having a high electron concentration. Here, when the lower layer of the calcination 41 is excessively advanced, since the portion of the silver extends from the portion of the higher electron concentration to A little lower electron concentration is lower, so the conversion efficiency of the solar cell is low. Therefore, it is necessary to determine the appropriate lower layer calcination by experiment (the temperature and time of the whole batch of firing (below 1 minute or less and 1 second or more is preferred). )) 41.

而且,上層鍛燒42係在下層鍛燒41產生時同時並列地產生。上層鍛燒42係與下層鍛燒41同樣地,藉由指狀電極4所含有的鉛(鉛玻璃)與銀之摻雜,而將上層的匯流排電極5穿破約20μm而在該匯流排電極5上形成銀(Ag)的露出部分。在此,上層鍛燒42過度(整批燒製的溫度太高)時,因為係以覆蓋匯流排電極5中之NTA玻璃所露出的Ag部分之方式進行再凝固而使其劣化(參照後述之第8圖及其說明),致使太陽電池轉換效率低落,因此必須藉由實驗來決定適當的上層鍛燒(整批燒製的溫度、時間(以1分鐘以下且1秒以上為佳))。 Further, the upper calcination 42 is simultaneously produced in parallel when the lower calcination 41 is produced. In the same manner as the lower calcination 41, the upper layer calcination 42 is formed by the lead (lead glass) contained in the finger electrode 4 and silver doping, and the upper bus bar electrode 5 is pierced by about 20 μm in the bus bar. An exposed portion of silver (Ag) is formed on the electrode 5. Here, when the upper calcination 42 is excessive (the temperature of the entire batch firing is too high), it is re-solidified so as to cover the Ag portion exposed by the NTA glass in the bus bar electrode 5 (refer to the following description). Fig. 8 and its description) cause the solar cell conversion efficiency to be low. Therefore, it is necessary to determine the appropriate upper layer calcination by experiment (the temperature and time of the whole batch firing (preferably 1 minute or less and 1 second or more).

基於以上第1圖(c)的構造,從上方往下方向照射太陽光時,太陽光會通過引線(未圖示)、匯流排電極5、無指狀電極4的部分及氮化膜3,入射至矽基板1而產生電子。隨後,在高電子濃度區域所積蓄的電子,係經由指狀電極4、匯流排電極5、引線6的路徑1、及指狀電極4、引線6的路徑2這兩修路徑(並列的路徑)而被取出至外部。以下依序詳細地說明。 According to the structure of the first FIG. 1(c), when sunlight is irradiated from the upper direction, the sunlight passes through the lead wires (not shown), the bus bar electrode 5, the portion of the fingerless electrode 4, and the nitride film 3, Electrons are generated by being incident on the ruthenium substrate 1. Subsequently, the electrons accumulated in the high electron concentration region are repaired by the finger electrode 4, the bus bar electrode 5, the path 1 of the lead 6, and the finger electrode 4 and the path 2 of the lead 6 (parallel paths). And was taken out to the outside. The following is explained in detail in order.

第2圖係顯示本發明的主要部位說明圖。第2圖(a)係與整批燒製後的第1圖(c)相同,第2圖(b)係第2圖(a)的主要部位之放大圖。 Fig. 2 is a view showing the main part of the present invention. Fig. 2(a) is the same as Fig. 1(c) after the entire batch is fired, and Fig. 2(b) is an enlarged view of the main part of Fig. 2(a).

在第2圖(b)中,整批燒製後如圖所示,指 狀電極4的下層鍛燒41係將氮化膜3貫穿,在此,係在N型濃度較高的區域11形成導電性路徑(銀的路徑)。 In Figure 2 (b), after the whole batch is fired, as shown in the figure, The lower layer sinter 41 of the electrode 4 penetrates the nitride film 3, and here, a conductive path (a path of silver) is formed in the region 11 having a high N-type concentration.

另一方面,同時整批燒製後係如圖示,指狀電極4的上層鍛燒42係將匯流排電極5貫穿或大致貫穿,在此,在匯流排電極5中形成有導電性通路(銀的路徑)。 On the other hand, at the same time, after the entire batch is fired, the upper layer calcination 42 of the finger electrode 4 penetrates or substantially penetrates the bus bar electrode 5, and a conductive path is formed in the bus bar electrode 5 ( Silver path).

因而,整批燒製後,藉由指狀電極4的下層鍛燒41及上層鍛燒42兩者之鍛燒,而形成N型濃度較高的區域11-指狀電極4-匯流排電極5-引線6的路徑1、及N型濃度較高的區域11-F指狀電極4-引線6的路徑2,能夠經由該兩路徑1、2而從引線6取出至外部,而且能夠使N型濃度較高的區域11與引線6之間的電阻值變得非常小且使太陽電池的效率提升(使用第4圖、第7圖而如後所述)。 Therefore, after the entire batch is fired, the calcination of both the lower calcination 41 and the upper calcination 42 of the finger electrode 4 forms a region 11 having a higher N-type concentration - the finger electrode 4 - the bus bar electrode 5 The path 1 of the lead 6 and the region 11 of the high-concentration N-type 11-F finger-wire 6 lead 6 can be taken out from the lead 6 to the outside via the two paths 1 and 2, and the N-type can be made The resistance value between the region 11 having a higher concentration and the lead 6 becomes very small and the efficiency of the solar cell is improved (the fourth and seventh figures are used as will be described later).

在此,NTA玻璃的匯流排電極5,係例如在一實驗結果中,將整批燒製溫度以較低的溫度例如700℃進行時,燒製不充分,且在焊接引線6後的拉伸試驗中,會與匯流排電極5成為一體而剝落。而在較高的溫度例如820℃進行整批燒製時,對匯流排電極5的正下方之氮化膜3造成損傷(氮化膜中的氫成為氣泡且通過膜中而對氮化膜造成損傷),而且焊接引線6時,連同氮化膜3一起從矽基板1剝離。而且以較高的溫度進行整批燒製時,在上層鍛燒42中,構成匯流排電極5之NTA玻璃溶解而再凝固時,會產生覆蓋匯流排電極5上所露出的導電性路徑覆蓋而使其劣化之情況(參照第8圖)。 Here, the bus bar electrode 5 of the NTA glass is, for example, in an experimental result, when the entire batch firing temperature is performed at a relatively low temperature, for example, 700 ° C, the firing is insufficient, and the stretching after the soldering of the lead 6 is performed. In the test, it is peeled off integrally with the bus bar electrode 5. When the whole batch is fired at a relatively high temperature, for example, 820 ° C, the nitride film 3 directly under the bus bar electrode 5 is damaged (hydrogen in the nitride film becomes a bubble and the film is passed through the film to cause a film on the nitride film). When the lead 6 is soldered, it is peeled off from the ruthenium substrate 1 together with the nitride film 3. Further, when the entire batch is fired at a relatively high temperature, in the upper calcination 42, when the NTA glass constituting the bus bar electrode 5 is dissolved and solidified, a conductive path covering the bus bar electrode 5 is exposed. Deterioration (see Figure 8).

如以上所述,在指狀電極4的下層鍛燒41 及上層鍛燒42係各自存在適當的溫度範圍,必須使用以按照各材料且由實驗求得的最適當的溫度範圍內的溫度來進行整批燒製。 As described above, the lower layer of the finger electrode 4 is calcined 41 Each of the upper calcining 42 systems has an appropriate temperature range, and it is necessary to use a batch firing in a temperature within an optimum temperature range determined for each material and experimentally determined.

第3圖係顯示本發明之使用NTA玻璃之太陽電池的製造步驟例。 Fig. 3 is a view showing an example of a manufacturing procedure of a solar cell using NTA glass of the present invention.

在第3圖中,S1係準備矽基板(PN接合形成基板)。此係準備:在矽基板1的表面形成有進行過擴散摻雜的高電子濃度區域、且在其上方形成有例如氮化膜(氮化矽膜)3作為抗反射膜(使太陽光通過且盡可能地減低表面反射之膜)之矽基板1。 In Fig. 3, S1 is a ruthenium substrate (PN junction formation substrate). In this case, a high electron concentration region subjected to diffusion doping is formed on the surface of the germanium substrate 1, and a nitride film (tantalum nitride film) 3 is formed thereon as an antireflection film (the sunlight is passed therethrough). The substrate 1 is reduced as much as possible by the surface-reflected film.

S2係在矽基板的背面印刷鋁膏。 S2 is an aluminum paste printed on the back side of the ruthenium substrate.

S3係藉由電爐而將膏狀物乾燥。在該等S1至S3中,係將鋁膏單面地印刷在所述之第1圖及第2圖的矽基板1的背面且藉由電爐進行加熱乾燥。 S3 is to dry the paste by an electric furnace. In these S1 to S3, the aluminum paste is printed on one side of the back surface of the ruthenium substrate 1 of the first and second figures, and is dried by heating in an electric furnace.

S4係將指狀電極用銀(鉛)膏印刷在矽基板的表面。此係在氮化膜3上網版印刷要形成的指狀電極4之圖案。印刷材料係例如使用在銀中混入鉛玻璃作為玻璃料(frit)而成之膏狀物。 In S4, a finger electrode is printed on the surface of a tantalum substrate with a silver (lead) paste. This is a pattern in which the finger electrodes 4 to be formed are printed on the nitride film 3. The printing material is, for example, a paste in which lead glass is mixed with silver as a frit.

S5係藉由電爐而將銀(鉛)膏乾燥。 S5 is a silver (lead) paste dried by an electric furnace.

S6係藉由銀/NTA玻璃膏而在矽基板的表面印刷匯流排電極。此係從在S4乾燥後的指狀電極上,網版印刷要形成的匯流排電極5之圖案。印刷材料係例如使用NTA玻璃(100%至0%以上,其餘部分為銀)作為玻璃料。 S6 prints the bus bar electrodes on the surface of the ruthenium substrate by silver/NTA glass paste. This is a pattern of the bus bar electrodes 5 to be formed by screen printing from the finger electrodes dried at S4. The printing material is, for example, a glass frit using NTA glass (100% to 0% or more, and the balance being silver).

S7係藉由電爐將銀/NTA玻璃膏乾燥。 S7 is a silver/NTA glass paste dried by an electric furnace.

經由以上,在形成有高電子濃度區域11、氮化膜3之矽基板1的背面將鋁電極2印刷/加熱乾燥,並依序在矽基板1的表面將指狀電極4、匯流排電極5的膏狀物印刷/加熱乾燥,並反覆進行,而完成整批燒製之準備。 Through the above, the aluminum electrode 2 is printed/heat dried on the back surface of the substrate 1 on which the high electron concentration region 11 and the nitride film 3 are formed, and the finger electrodes 4 and the bus bar electrodes 5 are sequentially provided on the surface of the ruthenium substrate 1. The paste is printed/heat dried and repeated, and the preparation for the entire batch is completed.

S8係藉由遠紅外線燒製爐將鋁電極、指狀電極、匯流排電極的各膏狀物進行整批燒製。藉由該整批燒製而形成鋁電極3,而且藉由實驗能夠確認下述內容:(1)藉由指狀電極4中的鉛(鉛玻璃)、銀之作用,下層的膜之氮化膜3係在固相中經由下層鍛燒41而形成將電子從高濃度電子區域取出至指狀電極4之路徑;而且(2)藉由指狀電極4中的鉛(鉛玻璃)、銀之作用,上層的膜之匯流排電極5係在液相中經由上層鍛燒42而形成將電子從指狀電極4往匯流排電極5上突出的部分(引線6被焊接)移動之路徑2(指狀電極4、引線6之路徑2)、或往匯流排電極5的上半部附近的部分移動之路徑1(指狀電極4、匯流排電極5、引線6之路徑1)。 In S8, the pastes of the aluminum electrode, the finger electrode, and the bus bar electrode are batch-fired by a far-infrared firing furnace. The aluminum electrode 3 was formed by the whole batch firing, and the following was confirmed by experiments: (1) nitridation of the lower layer film by the action of lead (lead glass) and silver in the finger electrode 4 The film 3 is formed by the lower layer calcining 41 in the solid phase to form a path for taking electrons from the high-concentration electron region to the finger electrode 4; and (2) by lead (lead glass) in the finger electrode 4, silver The bus bar electrode 5 of the upper layer is formed in the liquid phase by the upper layer calcination 42 to form a path 2 for moving electrons from the finger electrode 4 to the bus bar electrode 5 (the lead wire 6 is welded). The path 2) of the electrode 4 and the lead 6 or the path 1 (the finger 1 of the finger electrode 4, the bus bar electrode 5, and the lead 6) that moves toward the portion near the upper half of the bus bar electrode 5.

藉由該等下層鍛燒41及上層鍛燒42,能夠將電子從高電子濃度區域效率良好地取出至引線6(參照後述之第4圖、第7圖)。 By the lower layer calcination 41 and the upper layer calcination 42, the electrons can be efficiently taken out from the high electron concentration region to the lead wires 6 (see FIGS. 4 and 7 to be described later).

S9係焊接。此係將所述的第2圖(a)之引線6進行焊接(焊接、或超音波焊接)。 S9 welding. This is to weld (solder, or ultrasonically weld) the lead 6 of the second diagram (a).

S10係太陽電池的性能測定。 Performance measurement of S10 solar cells.

第4圖係顯示本發明的測定例。該測定例係顯示在將從第4圖的步驟S1至S8所製造的引線6進行焊 接之前的狀態下,從匯流排電極5(指狀電極4)上2支鄰接的接觸棒之間的電阻值之測定例。 Fig. 4 shows an example of measurement of the present invention. This measurement example is shown by welding the lead 6 manufactured from steps S1 to S8 of FIG. An example of measurement of the resistance value between two adjacent contact bars from the bus bar electrode 5 (finger electrode 4) in the state before the connection.

第4圖(a)係顯示平面圖,第4圖(b)係顯示測定位置例(號碼),第4圖(c)係顯示測定值例。 Fig. 4(a) shows a plan view, Fig. 4(b) shows a measurement position example (number), and Fig. 4(c) shows a measurement value example.

第4圖(a)係示意性地表示指狀電極4、及匯流排電極5之構成。匯流排電極5係以在細小帶狀的複數個指狀電極4上以電性連接之方式在直角方向形成帶狀者。 Fig. 4(a) schematically shows the configuration of the finger electrodes 4 and the bus bar electrodes 5. The bus bar electrode 5 is formed in a strip shape in a direction perpendicular to the plurality of finger electrodes 4 in a small strip shape.

第4圖(b)係測定2支接觸棒之間的電阻值之位置的號碼。 Fig. 4(b) is a number for measuring the position of the resistance value between the two contact bars.

(1)(2)(3)(4)(5)(6)係指狀電極4露出在匯流排電極5上的部分(藉由上層鍛燒42而形成的導電性路徑部分)之位置的號碼。 (1) (2) (3) (4) (5) (6) where the finger electrode 4 is exposed on the bus bar electrode 5 (the conductive path portion formed by the upper layer calcination 42) number.

(7)(8)係非在指狀電極4的正方向,而是在中間且為匯流排電極5上的圖示之位置的號碼。 (7) (8) is not in the positive direction of the finger electrode 4, but is in the middle and is the number of the position on the bus bar electrode 5.

第4圖(c)係顯示第4圖(b)的位置之測定值例。圖中的(1)(2)、(3)(4)、(5)(6)之電阻值均為0.20Ω之較小的電阻值。此係為了即使指狀電極4因上層鍛燒42而露出在匯流排電極5上,亦使2支接觸棒直接接觸於偏離該露出的部分之圖示的位置,而被測定為較小的電阻值。 Fig. 4(c) shows an example of the measured value of the position of Fig. 4(b). The resistance values of (1), (2), (3), (4), and (5) (6) in the figure are all smaller resistance values of 0.20 Ω. In order to expose the finger electrode 4 to the bus bar electrode 5 due to the upper layer calcination 42, the two contact bars are directly contacted with the position deviated from the exposed portion, and the resistance is determined to be small. value.

另一方面,(7)(8)的電阻值均為0.30Ω之稍大的電阻值。此係為了即便指狀電極4因上層鍛燒42而露出在匯流排電極5上,亦使2支接觸棒直接接觸於偏離該露出的部分之圖示的位置,而被測定為若干較大的電阻值。 On the other hand, the resistance values of (7) and (8) are all slightly larger resistance values of 0.30 Ω. In order to expose the finger electrodes 4 to the bus bar electrodes 5 due to the upper layer calcination 42, the two contact bars are directly contacted with the positions deviated from the exposed portions, and are determined to be somewhat large. resistance.

又,指狀電極4的電阻值為0.20Ω且從(1)至(6)為止大致相同。 Further, the finger electrode 4 has a resistance value of 0.20 Ω and is substantially the same from (1) to (6).

如上所述,藉由本發明之上層鍛燒42而使指狀電極4露出在匯流排電極5上,能夠極為縮小電阻值。 As described above, by the upper layer calcination 42 of the present invention, the finger electrodes 4 are exposed on the bus bar electrodes 5, and the resistance value can be extremely reduced.

第5圖及第6圖係顯示本發明的匯流排電極之剖面觀察例。所使用的試樣條件如圖示的下述。 Fig. 5 and Fig. 6 are views showing a cross-sectional observation example of the bus bar electrode of the present invention. The sample conditions used are as follows.

‧匯流排電極的材料比率:NTA玻璃:Ag=50:50 ‧ Material ratio of bus bar electrode: NTA glass: Ag=50:50

‧燒製條件:781℃×8秒 ‧Finishing conditions: 781 ° C × 8 seconds

‧基板:多晶矽基板 ‧Substrate: Polycrystalline germanium substrate

第5圖(a)係顯示製作至太陽電池的匯流排電極5為止時(從第3圖的S1至S8)的部分性平面圖。橫向的帶狀物為匯流排電極5,縱向的線狀物為指狀電極4。在此,如虛線顯示,將帶狀橫向的匯流排電極5之中央往橫向切斷。而且,在第6圖顯示該截面的照相。 Fig. 5(a) is a partial plan view showing the production of the bus bar electrode 5 of the solar cell (from S1 to S8 in Fig. 3). The transverse strip is the bus bar electrode 5 and the longitudinal line is the finger electrode 4. Here, as shown by a broken line, the center of the bus bar electrode 5 in the lateral direction is cut in the lateral direction. Moreover, the photograph of the cross section is shown in Fig. 6.

第5圖(b)係顯示剖面放大示意圖。此係顯示在第5圖(a)的虛線之截面進行切斷時,將該截面放大後的示意圖。在矽基板1上於與紙面為直角的方向形成有指狀電極4,並且於紙面的橫向形成有匯流排電極5。 Fig. 5(b) is a schematic enlarged view showing a cross section. This is a schematic view in which the cross section is enlarged when the cross section of the broken line in Fig. 5(a) is cut. A finger electrode 4 is formed on the crucible substrate 1 in a direction perpendicular to the plane of the paper, and a bus bar electrode 5 is formed in the lateral direction of the sheet.

第6圖(c)係顯示電子顯微鏡照相(在剖面中稍微傾斜後的Ag分布)。此係表示所述的第5圖(b)的剖面圖之Ag分布的SEM影像之照相。在圖中,指狀電極4的部分係藉由白色的輪廓而容易理解地表示。白色的輪廓線之中,以箭號(白)表示為圖示之「指狀電極4的銀穿出氮 化膜3」的部分,係指狀電極4藉由下層鍛燒穿出氮化膜3而到達高電子濃度區域之部分(導電性路徑、銀的路徑)。 Fig. 6(c) shows an electron microscope photograph (Ag distribution slightly inclined in the cross section). This is a photograph of an SEM image of the Ag distribution of the cross-sectional view of Fig. 5(b). In the figure, the portion of the finger electrode 4 is easily understood by a white outline. Among the white outlines, the arrow (white) indicates the silver of the finger electrode 4 through the nitrogen. The portion of the film 3" is a part of the high electron concentration region (the path of the conductive path and the silver) which is formed by the lower layer of the finger electrode 4 through the lower layer of the nitride film 3.

第6圖(d)係顯示電子顯微鏡照相(剖面)。此係表示所述的第5圖(b)的剖面圖之SEM影像之照相。在圖中,指狀電極4的部分係藉由白色的輪廓而容易理解地表示。白色的輪廓線之中,以箭號(黑)表示為圖示之「指狀電極4的銀為穿過氮化膜3」的部分,係指狀電極4藉由下層鍛燒穿出氮化膜3而到達高電子濃度區域之部分(導電性路徑、銀的路徑)。 Figure 6 (d) shows an electron microscope photograph (section). This is a photograph of the SEM image of the cross-sectional view of Fig. 5(b). In the figure, the portion of the finger electrode 4 is easily understood by a white outline. Among the white outlines, the arrow (black) is shown as the portion where the silver of the finger electrode 4 passes through the nitride film 3, and the finger electrode 4 is nitrided by the lower layer. The film 3 reaches a portion of the high electron concentration region (conductive path, silver path).

如上所述,清楚明白藉由指狀電極4中的鉛(鉛玻璃)、銀之作用,形成穿出下層的氮化膜3之銀的路徑,且形成穿出上層的匯流排電極5之銀的路徑。 As described above, it is clear that the path of the silver which penetrates the nitride film 3 of the lower layer is formed by the action of lead (lead glass) and silver in the finger electrode 4, and the silver which penetrates the bus bar electrode 5 of the upper layer is formed. path of.

第7圖係顯示使用本發明的匯流排電極之太陽電池的特性例。此係顯示經在右側所記載之下述的各種試樣的I-V特性測定後之例子。 Fig. 7 is a view showing an example of the characteristics of a solar cell using the bus bar electrode of the present invention. This shows an example after measurement of I-V characteristics of various samples described below on the right side.

‧NTA50-781-8(Sample1) ‧NTA50-781-8(Sample1)

‧NTA50-781-8(Sample2) ‧NTA50-781-8(Sample2)

‧NTA50-781-8(Sample3) ‧NTA50-781-8(Sample3)

‧NTA50-781-8(Sample4) ‧NTA50-781-8(Sample4)

‧NTA50-781-8(Sample5) ‧NTA50-781-8(Sample5)

‧NTA50-781-8(Sample6) ‧NTA50-781-8(Sample6)

‧Ref820-4(Sample1) ‧Ref820-4(Sample1)

‧Ref820-4(Sample2) ‧Ref820-4(Sample2)

‧Ref820-4(Sample3) ‧Ref820-4(Sample3)

在此,「NTA50」係作為匯流排電極的材料,將NTA玻璃設為50%wt,其餘部分設為銀,其後的「781」係表示在781℃燒製,其後的「8」係表示燒製時間為8秒之意(遠紅外線加熱)。又,「Ref820」係表示820℃,其後的「4」係表示4秒之意(遠紅外線加熱)。 Here, "NTA50" is used as a material for the bus bar electrode, and the NTA glass is made 50% by weight, and the rest is made of silver. The subsequent "781" is fired at 781 ° C, and the subsequent "8" system. Indicates that the firing time is 8 seconds (far infrared heating). Further, "Ref820" indicates 820 ° C, and the subsequent "4" indicates 4 seconds (far infrared heating).

針對以上所製造的試樣測定I-V特性且作圖成者係顯示在第7圖。相較於不含有NTA玻璃之匯流排電極4,使用NTA50%的匯流排電極4之太陽電池如圖所示,I為若干變大,且因為藉由所述之路徑1、路徑2所得的電阻值改善(降低),結果清楚明白能夠提升將電子從高電子濃度區域之取出效率。 The I-V characteristics were measured for the samples prepared above and the results are shown in Fig. 7. Compared with the bus bar electrode 4 which does not contain the NTA glass, the solar cell using the NTA 50% bus bar electrode 4 is as shown in the figure, I is somewhat enlarged, and because of the resistance obtained by the path 1 and the path 2 The value is improved (decreased) and the results clearly show that the efficiency of extracting electrons from the high electron concentration region can be improved.

第8圖係顯示本發明的上層鍛燒之說明圖。 Fig. 8 is an explanatory view showing the upper layer calcination of the present invention.

第8圖(a)係顯示上層鍛燒(適當)之顯微鏡照相的例子,第8圖(b)係顯示上層鍛燒(過度)之顯微鏡照相的例子。在此,橫向之較細的2條線為指狀電極4,縱向之1條寬度較廣的帶狀物為匯流排電極5。 Fig. 8(a) shows an example of microscopic photography of the upper layer calcination (suitable), and Fig. 8(b) shows an example of microscopic photography of the upper layer calcination (excessive). Here, the two thin lines in the lateral direction are the finger electrodes 4, and the strips having a wide width in the longitudinal direction are the bus bar electrodes 5.

在第8圖(a)中,清楚明白所述的整批燒製後,指狀電極4的Ag藉由所述的上層鍛燒42而一部分露出在匯流排電極5上。 In Fig. 8(a), it is clear that after the entire batch is fired, Ag of the finger electrode 4 is partially exposed on the bus bar electrode 5 by the upper layer calcination 42.

另一方面,第8圖(b)之過度進行(例如以太高的溫度進行整批燒製)時,能夠觀察到下述現象:NTA玻璃溶解而再凝固時,結晶會成長並變大,且被因上層鍛燒42而特意地露出在匯流排電極5上之Ag的部分所覆蓋而 未露出,使得電阻值變大。 On the other hand, when the over-execution of FIG. 8(b) (for example, batch firing at a too high temperature), the following phenomenon can be observed: when the NTA glass is dissolved and re-solidified, the crystal grows and becomes large, and Covered by the portion of Ag that is intentionally exposed on the bus bar electrode 5 due to the upper layer calcination 42 Not exposed, so that the resistance value becomes large.

因而,整批燒製的溫度必須在第8圖(a)之適當的溫度範圍進行,因為已知在如第8圖(b)之過度進行(較高的溫度)時,其電阻值會變大而造成性能劣化,所以整批燒製必須在適當的溫度範圍進行(每種材料都必須特別地藉由實驗來確認最適當的溫度範圍(而且,燒製時間例如1秒以上且1分鐘以內為期望的適當時間)而決定)。 Therefore, the temperature of the entire batch must be carried out in the appropriate temperature range of Fig. 8(a), because it is known that when it is excessively performed (higher temperature) as shown in Fig. 8(b), its resistance value changes. Large performance degradation, so the entire batch must be carried out in the appropriate temperature range (each material must be specifically tested by experiment to confirm the most appropriate temperature range (and, the firing time is, for example, 1 second or more and 1 minute or less). Determined for the appropriate time desired).

Claims (17)

一種太陽電池,係在基板上製作有照射光線等的時會生成高電子濃度的區域,且在該區域上形成有透射光線等之絕緣膜,並且在該絕緣膜上形成有指狀電極,該指狀電極係形成從前述區域取出電子之取出口,而且形成有電性連接複數個該指狀電極而將前述電子取出至外部之匯流排電極,其中,在前述絕緣膜上形成含有銀及鉛之指狀電極,而且在其上方形成前述匯流排電極之後,進行燒製,在該燒製時藉由前述指狀電極所含有的銀及鉛之作用,貫穿該指狀電極下的薄膜之前述絕緣膜而在前述區域與該指狀電極之間形成有導電性通路(稱為下層鍛燒),而且進一步在該燒製時藉由前述指狀電極所含有的銀及鉛之作用,貫穿該指狀電極上的層之前述匯流排電極而形成有在該匯流排電極上露出之導電性通路(稱為上層鍛燒)。 A solar cell is a region in which a high electron concentration is generated when an irradiation light or the like is formed on a substrate, and an insulating film that transmits light or the like is formed on the region, and a finger electrode is formed on the insulating film. The finger electrode forms an outlet for taking out electrons from the region, and is formed with a bus bar electrode electrically connecting a plurality of the finger electrodes to take out the electrons to the outside, wherein silver and lead are formed on the insulating film. a finger electrode, and after forming the bus bar electrode thereon, firing is performed, and the film penetrates the film under the finger electrode by the action of silver and lead contained in the finger electrode during the firing An insulating film is formed between the region and the finger electrode to form a conductive path (referred to as lower layer calcination), and further, during the firing, the silver and lead contained in the finger electrode are inserted through the insulating film. The bus bar electrode of the layer on the finger electrode is formed with a conductive path (referred to as upper layer calcination) exposed on the bus bar electrode. 如申請專利範圍第1項所述之太陽電池,其中,將前述下層鍛燒設為固相中的鍛燒,將前述上層鍛燒設為液相中的鍛燒,相較於前者的導電性通路之長度,使後者的導電性通路之長度大幅度增長。 The solar cell according to claim 1, wherein the lower calcination is calcination in a solid phase, and the upper calcination is calcination in a liquid phase, compared to conductivity of the former. The length of the via is such that the length of the latter's conductive path is greatly increased. 如申請專利範圍第1或2項所述之太陽電池,其中,除了形成有貫穿前述匯流排電極而露出在該匯流排電極上的導電性通路以外,在該匯流排電極上形成有導電層時,亦使導電性通路形成在該導電層。 The solar cell according to claim 1 or 2, wherein, in addition to the conductive path formed on the bus bar electrode through the bus bar electrode, when a conductive layer is formed on the bus bar electrode A conductive path is also formed in the conductive layer. 如申請專利範圍第1至3項中任一項所述之太陽電池,其係將帶狀的引線焊接在前述露出的導電性通路或前述導電層。 The solar cell according to any one of claims 1 to 3, wherein the strip-shaped lead is soldered to the exposed conductive via or the conductive layer. 如申請專利範圍第1至4項中任一項所述之太陽電池,其中,作為前述導電性的匯流排電極,係將導電性玻璃設為重量比100%至0%以上,且將其餘部分設為銀。 The solar cell according to any one of claims 1 to 4, wherein the conductive bus bar is made of a conductive glass having a weight ratio of 100% to 0% or more, and the remaining portion is Set to silver. 如申請專利範圍第5項所述之太陽電池,其中,前述導電性玻璃係設為至少含有釩或釩及鋇之釩酸玻璃。 The solar cell according to claim 5, wherein the conductive glass is a vanadic acid glass containing at least vanadium, vanadium and niobium. 如申請專利範圍第5或6項所述之太陽電池,其中,燒製前述導電性玻璃的步驟之時間,最長為1分鐘以內且為1秒以上。 The solar cell according to claim 5, wherein the step of firing the conductive glass is up to 1 minute and longer than 1 second. 如申請專利範圍第5至7項中任一項所述之太陽電池,其中,因為燒製前述導電性玻璃的步驟之溫度,在溫度太低時會無法進行前述下層鍛燒,在溫度太高時,在燒製而冷卻後,前述導電性通路會被前述匯流排電極中的前述導電性玻璃覆蓋而使前述上層鍛燒劣化,所以要設為該等之間的範圍內之溫度。 The solar cell according to any one of claims 5 to 7, wherein the temperature of the step of firing the conductive glass is such that the lower layer calcination cannot be performed when the temperature is too low, and the temperature is too high. At the time of cooling and cooling, the conductive path is covered by the conductive glass in the bus bar electrode to deteriorate the upper layer by calcination. Therefore, the temperature in the range between the temperatures is set. 如申請專利範圍第5至8項中任一項所述之太陽電池,其中,前述導電性玻璃為無Pb。 The solar cell according to any one of claims 5 to 8, wherein the conductive glass is Pb-free. 一種太陽電池之製造方法,係在基板上製作有照射光線等的時會生成高電子濃度的區域,且在該區域上形成有透射光線等之絕緣膜,並且在該絕緣膜上形成有指狀電極,該指狀電極係形成從前述區域取出電子之 取出口,而且形成有電性連接複數個該指狀電極而將前述電子取出至外部之匯流排電極之太陽電池的製造方法,該製造方法具有:在前述絕緣膜上形成含有銀及鉛之指狀電極,而且在其上方形成前述匯流排電極之後,進行燒製之步驟;在該燒製時藉由前述指狀電極所含有的銀及鉛之作用,貫穿該指狀電極下的薄膜之前述絕緣膜而在前述區域與該指狀電極之間形成有導電性通路(稱為下層鍛燒),而且進一步在該燒製時藉由前述指狀電極所含有的銀及鉛之作用,貫穿該指狀電極上的層之前述匯流排電極貫穿而形成在該匯流排電極上露出之導電性通路(稱為上層鍛燒)。 A method for producing a solar cell, wherein a region where a high electron concentration is generated when an irradiation light or the like is formed on a substrate, and an insulating film that transmits light or the like is formed on the region, and a finger shape is formed on the insulating film. An electrode, the finger electrode forming an electron from the aforementioned region And a method of manufacturing a solar cell having a plurality of the finger electrodes electrically connected to the external bus bar electrode, wherein the method comprises: forming a finger containing silver and lead on the insulating film a step of firing the electrode after forming the bus bar electrode thereon; and performing the above-mentioned process of the film under the finger electrode by the action of silver and lead contained in the finger electrode during the firing An insulating film is formed between the region and the finger electrode to form a conductive path (referred to as lower layer calcination), and further, during the firing, the silver and lead contained in the finger electrode are inserted through the insulating film. The bus bar electrode of the layer on the finger electrode penetrates to form a conductive path (referred to as upper layer calcination) exposed on the bus bar electrode. 如申請專利範圍第10項所述之太陽電池之製造方法,其中,將前述下層鍛燒設為固相中的鍛燒,將前述上層鍛燒設為液相中的鍛燒,相較於前者的導電性通路之長度,使後者的導電性通路之長度大幅度增長。 The method for producing a solar cell according to claim 10, wherein the lower calcination is calcination in a solid phase, and the upper calcination is calcination in a liquid phase, compared to the former The length of the conductive path increases the length of the latter's conductive path. 如申請專利範圍第10或11項所述之太陽電池之製造方法,其中,除了形成有貫穿前述匯流排電極而露出在該匯流排電極上的導電性通路以外,在該匯流排電極上形成有導電層時,亦使導電性通路形成在該導電層。 The method for manufacturing a solar cell according to claim 10, wherein the bus bar electrode is formed on the bus bar electrode except that a conductive path is formed through the bus bar electrode and exposed on the bus bar electrode. In the case of the conductive layer, a conductive path is also formed in the conductive layer. 如申請專利範圍第10至12項中任一項所述之太陽電池之製造方法,其係將帶狀的引線焊接在前述露出的導電性通路或前述導電層。 The method for producing a solar cell according to any one of claims 10 to 12, wherein the strip-shaped lead is soldered to the exposed conductive via or the conductive layer. 如申請專利範圍第10至13項中任一項所述之太陽電池之製造方法,其中,作為前述導電性匯流排電極,係將導電性玻璃設為重量比100%至0%以上,且將其餘部分設為銀。 The method for producing a solar cell according to any one of claims 10 to 13, wherein the conductive bus bar is made of a conductive glass having a weight ratio of 100% to 0% or more, and The rest is set to silver. 如申請專利範圍第14項所述之太陽電池之製造方法,其中,前述導電性玻璃係設為至少含有釩或釩及鋇之釩酸玻璃。 The method for producing a solar cell according to claim 14, wherein the conductive glass is a vanadic acid glass containing at least vanadium, vanadium and niobium. 如申請專利範圍第10至15項中任一項所述之太陽電池之製造方法,其中燒製前述導電性玻璃的步驟之時間,最長為1分鐘以內且為1秒以上。 The method for producing a solar cell according to any one of claims 10 to 15, wherein the step of firing the conductive glass is up to 1 minute and longer than 1 second. 如申請專利範圍第10至16項中任一項所述之太陽電池之製造方法,其中,因為燒製前述導電性玻璃的步驟之溫度,在溫度太低時會無法進行前述下層鍛燒,在溫度太高時,在燒製而冷卻後,前述導電性通路會被前述匯流排電極中的前述導電性玻璃覆蓋而使前述上層鍛燒劣化,所以要設為該等之間的範圍內之溫度。 The method for producing a solar cell according to any one of claims 10 to 16, wherein the lower layer calcination cannot be performed when the temperature is too low because of the temperature of the step of firing the conductive glass. When the temperature is too high, after the firing and cooling, the conductive path is covered by the conductive glass in the bus bar electrode, and the upper layer is calcined and deteriorated. Therefore, the temperature in the range between the temperatures is set. .
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