CN205542803U - Solar battery structure - Google Patents
Solar battery structure Download PDFInfo
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- CN205542803U CN205542803U CN201620032844.9U CN201620032844U CN205542803U CN 205542803 U CN205542803 U CN 205542803U CN 201620032844 U CN201620032844 U CN 201620032844U CN 205542803 U CN205542803 U CN 205542803U
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The utility model relates to a solar battery structure, including a conductivity type silicon, cover the 2nd conductivity type silicon at a conductivity type silicon face, set up the antireflection layer at the 2nd conductivity type silicon face, arrange the positive electrode of requirement in the antireflection layer, a conductivity type silicon back sets up out -of -the -way electric field, arranges the back electrode of requirement in back of the body electric field, the upper end and the conductivity type silicon contact of back electrode, and the lower extreme of back electrode exposes the surface of out -of -the -way electric field, characterized by: the lower extreme surface covering tin cream layer of back electrode. Solar battery structure's manufacturing method includes following step: (1 )Adopt printing half tone printing tin cream layer, print in the surface of back electrode on the tin cream layer, (2) drying. The utility model discloses increase the tin cream layer on the back electrode, when collocation was lacked tin or is not had soldering area product, good welding was realized to the reliable alloy -layer of welding formed interface.
Description
Technical field
This utility model relates to a kind of solar battery structure, belongs to technical field of solar batteries.
Background technology
The basic structure of crystal silicon solar energy battery includes PN junction, anelectrode, antireflection layer, aluminum back electric field and back electrode etc..Its corresponding function is as follows: PN junction is the basic structure that solaode produces photovoltaic effect；Positive electricity extremely derives the electric current that solaode negative pole produces, and is connected to make solaode string and assembly with welding；The function of antireflection layer is to reduce the reflectance of solar battery front side, increases the absorption of sunlight；The function of aluminum back electric field, for forming back of the body electric field, improves battery efficiency, and becomes the path of electric current conduction；The function of back electrode is to derive the electric current that solaode positive pole produces, and is connected to make solaode string and assembly with welding.
When reflective solder strip combines above conventional crystalline silicon solar cell, can run into its surface needs to retain reflective lines and reduce tin thickness, ultimately results in the problem that failure welding maybe cannot weld.
Summary of the invention
The purpose of this utility model is to overcome the deficiencies in the prior art, thering is provided a kind of solar battery structure, this solar battery structure increases tin paste layer on back electrode, thus when the few stannum of collocation or Wuxi welding product, weld interface forms reliable alloy-layer, it is achieved good welding.
The technical scheme provided according to this utility model, described solar battery structure, including the first conduction type silicon, the second conduction type silicon is covered at the first conduction type silicon face, at the second conduction type silicon face, antireflection layer is set, arranging the anelectrode of requirement in antireflection layer, the lower end of anelectrode contacts with the second conduction type silicon, and the surface of antireflection layer is stretched out in the upper end of anelectrode；Arranging back of the body electric field at the described first conduction type silicon back side, arrange the back electrode of requirement in back of the body electric field, the upper end of back electrode contacts with the first conduction type silicon, and the surface of back of the body electric field is exposed in the lower end of back electrode；It is characterized in that: the rear surface at described back electrode covers tin paste layer.
Further, the thickness of described tin paste layer is 15～30 μm.
Further, described tin paste layer is covered in the surface of back electrode, and the two ends of back electrode have exposed area.
Further, the width of described exposed area is 2～3mm.
Further, described antireflection layer uses silicon nitride film, and the thickness of described antireflection layer is 79～90 μm.
Further, described back of the body electric field uses aluminium paste to be made, and back of the body electric field ground thickness is 20～30 μm.
The manufacture method of described solar battery structure, is characterized in that, comprises the following steps:
(1) the first conduction type silicon, the second conduction type silicon, antireflection layer, anelectrode, back of the body electric field and the cell backside of back electrode structure are being made, printing screen plate is used to print tin paste layer, tin paste layer is printed in the surface of back electrode, and the print thickness of tin paste layer is 15～30 μm；
(2) dry after tin paste layer printing.
Further, the viscosity of described tin cream is 400～600Pa S, and granularity is 10～40 μm, and solids content is 70～90%.
Further, it is 120～170 DEG C that described step (2) dries temperature, and drying time is 2～3 minutes.
Further, in described step (1), during printing, 2～3mm wide back electrodes are exposed at the two ends of tin paste layer.
Solar battery structure described in the utility model is consistent with conventional batteries when welding with reflective solder strip, and equipment is without doing any variation, and weld interface can form reliable alloy-layer.This utility model can be arranged in pairs or groups on the product of few stannum or Wuxi welding, accomplishes that good welding, welding pulling force meet technology and require standard.When combining reflective solder strip product, can not consider the Welding Problems of welding itself, reflective interface can be processed by efficiency maximization, and ultimate attainment performance reflective solder strip brings the gain of component power, it is contemplated that component power gain 1.5%.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of solar battery structure described in the utility model.
Fig. 2 is the A direction view of Fig. 1.
Label in figure: P-type silicon 1, N-type silicon 2, antireflection layer 3, anelectrode 4, aluminum back electric field 5, back electrode 6, tin paste layer 7, exposed area 8.
Detailed description of the invention
Below in conjunction with concrete accompanying drawing, the utility model is described in further detail.
As shown in Figure 1: solar battery structure described in the utility model includes P-type silicon 1, the front of P-type silicon 1 covers N-type silicon 2, forms PN junction；At described N-type silicon 2 surface configuration antireflection layer 3, arranging the anelectrode 4 of requirement in antireflection layer 3, the lower end of anelectrode 4 contacts with N-type silicon 2, and the surface of antireflection layer 3 is stretched out in the upper end of anelectrode 4；Arranging aluminum back electric field 5 at described P-type silicon 1 back side, arrange the back electrode 6 of requirement in aluminum back electric field 5, the upper end of back electrode 6 contacts with P-type silicon 1, and the surface of aluminum back electric field 5 is exposed in the lower end of back electrode 6；Rear surface at described back electrode 6 covers tin paste layer 7, and the thickness of tin paste layer 7 is generally 15～30 μm.
As in figure 2 it is shown, described tin paste layer 7 is covered in the surface of back electrode 6, and the two ends of back electrode 6 have exposed area 8, and the width of this exposed area 8 is generally 2～3mm；With welding welding process, tin paste layer 7 can occur certain extension along the two ends of back electrode 6, to cover back electrode 6 surface.
Described antireflection layer 3 typically uses silicon nitride film, and thickness is about 79～90 μm.
Described anelectrode 4 and back electrode 6 are respectively adopted silver slurry and make.
Described aluminum back electric field 5 uses aluminium paste to make, and thickness is about 20～30 μm.
Embodiment one: the manufacture method of a kind of solar battery structure, comprises the following steps:
(1) selection of tin cream: the parameters such as the viscosity of tin cream, granularity and solids content need to be applicable to silk screen printing；Tin cream viscosity is 400Pa S, and granularity is 10 μm, and solids content is 70%；The kind that tin cream matches with existing technique preferably with no-clean low-residue, welding procedure, such as Sn63Pb37 series solder(ing) paste；
(2) P-type silicon 1, N-type silicon 2, antireflection layer 3, anelectrode 4, aluminum back electric field 5 and the cell backside of back electrode 6 structure are being made, printing screen plate is used to print tin paste layer on screen printing apparatus, tin paste layer is printed in the surface of back electrode 6, the print thickness of tin paste layer is 15 μm, and during printing, back electrode 6 wide for 2mm is exposed at the two ends of tin paste layer；
(3) after tin paste layer printing, drying 3 minutes at 120 DEG C, it is ensured that tin cream Organic substance has volatilized, there is not the reactions such as fusing in tin cream simultaneously.
Embodiment two: the manufacture method of a kind of solar battery structure, comprises the following steps:
(1) selection of tin cream: the parameters such as the viscosity of tin cream, granularity and solids content need to be applicable to silk screen printing；Tin cream viscosity is 600Pa S, and granularity is 40 μm, and solids content is 90%；Tin cream uses Sn63Pb37 series solder(ing) paste；
(2) P-type silicon 1, N-type silicon 2, antireflection layer 3, anelectrode 4, aluminum back electric field 5 and the cell backside of back electrode 6 structure are being made, printing screen plate is used to print tin paste layer on screen printing apparatus, tin paste layer is printed in the surface of back electrode 6, the print thickness of tin paste layer is 30 μm, and during printing, back electrode 6 wide for 3mm is exposed at the two ends of tin paste layer；
(3) after tin paste layer printing, drying 2 minutes at 170 DEG C, it is ensured that tin cream Organic substance has volatilized, there is not the reactions such as fusing in tin cream simultaneously.
Embodiment three: the manufacture method of a kind of solar battery structure, comprises the following steps:
(1) selection of tin cream: the parameters such as the viscosity of tin cream, granularity and solids content need to be applicable to silk screen printing；Tin cream viscosity is 500Pa S, and granularity is 20 μm, and solids content is 80%；Tin cream uses Sn63Pb37 series solder(ing) paste；
(2) P-type silicon 1, N-type silicon 2, antireflection layer 3, anelectrode 4, aluminum back electric field 5 and the cell backside of back electrode 6 structure are being made, printing screen plate is used to print tin paste layer on screen printing apparatus, tin paste layer is printed in the surface of back electrode 6, the print thickness of tin paste layer is 20 μm, and during printing, back electrode 6 wide for 2.5mm is exposed at the two ends of tin paste layer；
(3) after tin paste layer printing, drying 2.5 minutes at 150 DEG C, it is ensured that tin cream Organic substance has volatilized, there is not the reactions such as fusing in tin cream simultaneously.
Solar battery structure described in the utility model is consistent with conventional batteries when welding with reflective solder strip, and equipment is without doing any variation, and weld interface can form reliable alloy-layer.This utility model can be arranged in pairs or groups on the product of few stannum or Wuxi welding, accomplishes that good welding, welding pulling force meet technology and require standard.When combining reflective solder strip product, can not consider the Welding Problems of welding itself, reflective interface can be processed by efficiency maximization, and ultimate attainment performance reflective solder strip brings the gain of component power, it is contemplated that component power gain 1.5%.
Claims (6)
1. a solar battery structure, including the first conduction type silicon, the second conduction type silicon is covered at the first conduction type silicon face, at the second conduction type silicon face, antireflection layer is set, the anelectrode of requirement is arranged in antireflection layer, the lower end of anelectrode contacts with the second conduction type silicon, and the surface of antireflection layer is stretched out in the upper end of anelectrode；Arranging back of the body electric field at the described first conduction type silicon back side, arrange the back electrode of requirement in back of the body electric field, the upper end of back electrode contacts with the first conduction type silicon, and the surface of back of the body electric field is exposed in the lower end of back electrode；It is characterized in that: the rear surface at described back electrode covers tin paste layer.
2. solar battery structure as claimed in claim 1, is characterized in that: the thickness of described tin paste layer is 15～30 μm.
3. solar battery structure as claimed in claim 1, is characterized in that: described tin paste layer is covered in the surface of back electrode, and the two ends of back electrode has exposed area.
4. solar battery structure as claimed in claim 3, is characterized in that: the width of described exposed area is 2～3mm.
5. solar battery structure as claimed in claim 1, is characterized in that: described antireflection layer uses silicon nitride film, and the thickness of described antireflection layer is 79～90 μm.
6. solar battery structure as claimed in claim 1, is characterized in that: described back of the body electric field uses aluminium paste to be made, and back of the body electric field ground thickness is 20～30 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620032844.9U CN205542803U (en) | 2016-01-13 | 2016-01-13 | Solar battery structure |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201620032844.9U CN205542803U (en) | 2016-01-13 | 2016-01-13 | Solar battery structure |
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| CN205542803U true CN205542803U (en) | 2016-08-31 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514187A (en) * | 2016-01-13 | 2016-04-20 | 无锡尚德太阳能电力有限公司 | Solar battery structure and manufacturing method thereof |
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- 2016-01-13 CN CN201620032844.9U patent/CN205542803U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105514187A (en) * | 2016-01-13 | 2016-04-20 | 无锡尚德太阳能电力有限公司 | Solar battery structure and manufacturing method thereof |
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