CN105514187A - Solar battery structure and manufacturing method thereof - Google Patents
Solar battery structure and manufacturing method thereof Download PDFInfo
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- CN105514187A CN105514187A CN201610021996.3A CN201610021996A CN105514187A CN 105514187 A CN105514187 A CN 105514187A CN 201610021996 A CN201610021996 A CN 201610021996A CN 105514187 A CN105514187 A CN 105514187A
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- solar battery
- type silicon
- battery structure
- conduction type
- paste layer
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 65
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 40
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 40
- 239000010703 silicon Substances 0.000 claims abstract description 40
- 230000005684 electric field Effects 0.000 claims abstract description 26
- 238000007639 printing Methods 0.000 claims abstract description 17
- 238000001035 drying Methods 0.000 claims abstract description 3
- 239000006071 cream Substances 0.000 claims description 20
- 238000000034 method Methods 0.000 claims description 16
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 13
- 229910052782 aluminium Inorganic materials 0.000 claims description 13
- 239000007787 solid Substances 0.000 claims description 8
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 23
- 238000007650 screen-printing Methods 0.000 abstract description 7
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910000679 solder Inorganic materials 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
- H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022441—Electrode arrangements specially adapted for back-contact solar cells
- H01L31/022458—Electrode arrangements specially adapted for back-contact solar cells for emitter wrap-through [EWT] type solar cells, e.g. interdigitated emitter-base back-contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Life Sciences & Earth Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Sustainable Energy (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a solar battery structure and a manufacturing method thereof. The solar battery structure comprises first conduction type silicon, wherein second conduction type silicon covers the surface of the first conduction type silicon; an antireflection layer is arranged on the surface of the second conduction type silicon; a required number of positive electrodes are arranged in the antireflection layer; a back electric field is arranged at the back side of the first conduction type silicon; a required number of back electrodes are arranged in the back electric field; the upper ends of the back electrodes are in contact with the first conduction type silicon; the lower ends of the back electrodes are exposed on the surface of the back electric field. The solar battery structure is characterized in that a tin paste layer covers the surface of the lower end of each back electrode. The manufacturing method of the solar battery structure comprises the following steps of (1) printing the tin paste layer by using a screen printing plate, and printing the tin paste layer on the surface of each back electrode; (2) drying. The tin paste layer is added on each back electrode, so that a reliable alloy layer is formed at a welding interface when the solar battery structure is matched with little-tin or tin-free welding strip products, and good welding is realized.
Description
Technical field
The present invention relates to a kind of solar battery structure and manufacture method thereof, belong to technical field of solar batteries.
Background technology
The basic structure of crystal silicon solar energy battery comprises PN junction, positive electrode, antireflection layer, aluminum back electric field and back electrode etc.Its corresponding function is as follows: PN junction is the basic structure that solar cell produces photovoltaic effect; Positive electricity very derives the electric current that solar cell negative pole produces, and is connected for making solar cell string and assembly with welding; The function of antireflection layer is reduce the reflectivity of solar battery front side, increases the absorption of sunlight; The function of aluminum back electric field, for forming back of the body electric field, improves battery efficiency, and becomes the path of electric current conduction; The function of back electrode is the electric current of deriving the generation of solar cell positive pole, and is connected with welding for making solar cell string and assembly.
When reflective solder strip is in conjunction with above conventional crystalline silicon solar cell, can run into its surface needs retain reflective lines and reduce tin thickness, finally causes the problem that failure welding maybe cannot weld.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, a kind of solar battery structure and manufacture method thereof are provided, this solar battery structure increases tin paste layer on back electrode, thus when arranging in pairs or groups few tin or Wuxi welding product, weld interface forms reliable alloy-layer, realizes good welding.
According to technical scheme provided by the invention, described solar battery structure, comprise the first conduction type silicon, the second conduction type silicon is covered at the first conduction type silicon face, at the second conduction type silicon face, antireflection layer is set, in antireflection layer, arrange the positive electrode of requirement, the lower end of positive electrode contacts with the second conduction type silicon, and the surface of antireflection layer is stretched out in the upper end of positive electrode; Arrange back of the body electric field at the described first conduction type silicon back side, in back of the body electric field, arrange the back electrode of requirement, the upper end of back electrode contacts with the first conduction type silicon, and the surface of back of the body electric field is exposed in the lower end of back electrode; It is characterized in that: cover tin paste layer at the rear surface of described back electrode.
Further, the thickness of described tin paste layer is 15 ~ 30 μm.
Further, described tin paste layer is covered in the surface of back electrode, and the two ends of back electrode have exposed area.
Further, the width of described exposed area is 2 ~ 3mm.
Further, described antireflection layer adopts silicon nitride film, and the thickness of described antireflection layer is 79 ~ 90 μm.
Further, described back of the body electric field adopts aluminium paste to be made, and back of the body electric field ground thickness is 20 ~ 30 μm.
The manufacture method of described solar battery structure, is characterized in that, comprises the following steps:
(1) at the cell backside making the first conduction type silicon, the second conduction type silicon, antireflection layer, positive electrode, back of the body electric field and back electrode structure, printing screen plate is adopted to print tin paste layer, tin paste layer is printed in the surface of back electrode, and the print thickness of tin paste layer is 15 ~ 30 μm;
(2) dry after tin paste layer printing.
Further, the viscosity of described tin cream is 400 ~ 600PaS, and granularity is 10 ~ 40 μm, and solids content is 70 ~ 90%.
Further, described step (2) bake out temperature is 120 ~ 170 DEG C, and drying time is 2 ~ 3 minutes.
Further, in described step (1), during printing, the wide back electrode of 2 ~ 3mm is exposed at the two ends of tin paste layer.
Solar battery structure of the present invention when welding with reflective solder strip and conventional batteries consistent, equipment is without the need to doing any variation, and weld interface can form reliable alloy-layer.The present invention can arrange in pairs or groups on the product of few tin or Wuxi welding, accomplishes good welding, and welding pulling force meets technical requirement standard.When in conjunction with reflective solder strip product, can not consider the Welding Problems of welding itself, reflective interface can by maximizing efficiency process, and ultimate attainment performance reflective solder strip brings the gain of component power, estimates component power gain 1.5%.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of solar battery structure of the present invention.
Fig. 2 is the A direction view of Fig. 1.
Number in the figure: P-type silicon 1, N-type silicon 2, antireflection layer 3, positive electrode 4, aluminum back electric field 5, back electrode 6, tin paste layer 7, exposed area 8.
Embodiment
Below in conjunction with concrete accompanying drawing, the invention will be further described.
As shown in Figure 1: solar battery structure of the present invention comprises P-type silicon 1, the front of P-type silicon 1 covers N-type silicon 2, forms PN junction; Arrange antireflection layer 3 on described N-type silicon 2 surface, arrange the positive electrode 4 of requirement in antireflection layer 3, the lower end of positive electrode 4 contacts with N-type silicon 2, and the surface of antireflection layer 3 is stretched out in the upper end of positive electrode 4; Arrange aluminum back electric field 5 at described P-type silicon 1 back side, arrange the back electrode 6 of requirement in aluminum back electric field 5, the upper end of back electrode 6 contacts with P-type silicon 1, and the surface of aluminum back electric field 5 is exposed in the lower end of back electrode 6; Cover tin paste layer 7 at the rear surface of described back electrode 6, the thickness of tin paste layer 7 is generally 15 ~ 30 μm.
As shown in Figure 2, described tin paste layer 7 is covered in the surface of back electrode 6, and the two ends of back electrode 6 have exposed area 8, and the width of this exposed area 8 is generally 2 ~ 3mm; With welding welding process, can there is certain extension along the two ends of back electrode 6 in tin paste layer 7, to cover back electrode 6 surface.
Described antireflection layer 3 generally adopts silicon nitride film, and thickness is approximately 79 ~ 90 μm.
Described positive electrode 4 and back electrode 6 adopt silver slurry to make respectively.
Described aluminum back electric field 5 adopts aluminium paste to make, and thickness is approximately 20 ~ 30 μm.
Embodiment one: a kind of manufacture method of solar battery structure, comprises the following steps:
(1) selection of tin cream: viscosity, the parameter such as granularity and solids content of tin cream need to be applicable to silk screen printing; Tin cream viscosity is 400PaS, and granularity is 10 μm, and solids content is 70%; The kind that tin cream preferably adopts no-clean low-residue, welding procedure and existing technique to match, as Sn63Pb37 series solder(ing) paste;
(2) at the cell backside making P-type silicon 1, N-type silicon 2, antireflection layer 3, positive electrode 4, aluminum back electric field 5 and back electrode 6 structure, printing screen plate is adopted to print tin paste layer on screen printing apparatus, tin paste layer is printed in the surface of back electrode 6, the print thickness of tin paste layer is 15 μm, and during printing, the wide back electrode of 2mm 6 is exposed at the two ends of tin paste layer;
(3) after tin paste layer printing, dry 3 minutes at 120 DEG C, ensure that tin cream organic substance has volatilized, there is not the reactions such as fusing in tin cream simultaneously.
Embodiment two: a kind of manufacture method of solar battery structure, comprises the following steps:
(1) selection of tin cream: viscosity, the parameter such as granularity and solids content of tin cream need to be applicable to silk screen printing; Tin cream viscosity is 600PaS, and granularity is 40 μm, and solids content is 90%; Tin cream adopts Sn63Pb37 series solder(ing) paste;
(2) at the cell backside making P-type silicon 1, N-type silicon 2, antireflection layer 3, positive electrode 4, aluminum back electric field 5 and back electrode 6 structure, printing screen plate is adopted to print tin paste layer on screen printing apparatus, tin paste layer is printed in the surface of back electrode 6, the print thickness of tin paste layer is 30 μm, and during printing, the wide back electrode of 3mm 6 is exposed at the two ends of tin paste layer;
(3) after tin paste layer printing, dry 2 minutes at 170 DEG C, ensure that tin cream organic substance has volatilized, there is not the reactions such as fusing in tin cream simultaneously.
Embodiment three: a kind of manufacture method of solar battery structure, comprises the following steps:
(1) selection of tin cream: viscosity, the parameter such as granularity and solids content of tin cream need to be applicable to silk screen printing; Tin cream viscosity is 500PaS, and granularity is 20 μm, and solids content is 80%; Tin cream adopts Sn63Pb37 series solder(ing) paste;
(2) at the cell backside making P-type silicon 1, N-type silicon 2, antireflection layer 3, positive electrode 4, aluminum back electric field 5 and back electrode 6 structure, printing screen plate is adopted to print tin paste layer on screen printing apparatus, tin paste layer is printed in the surface of back electrode 6, the print thickness of tin paste layer is 20 μm, and during printing, the wide back electrode of 2.5mm 6 is exposed at the two ends of tin paste layer;
(3) after tin paste layer printing, dry 2.5 minutes at 150 DEG C, ensure that tin cream organic substance has volatilized, there is not the reactions such as fusing in tin cream simultaneously.
Solar battery structure of the present invention when welding with reflective solder strip and conventional batteries consistent, equipment is without the need to doing any variation, and weld interface can form reliable alloy-layer.The present invention can arrange in pairs or groups on the product of few tin or Wuxi welding, accomplishes good welding, and welding pulling force meets technical requirement standard.When in conjunction with reflective solder strip product, can not consider the Welding Problems of welding itself, reflective interface can by maximizing efficiency process, and ultimate attainment performance reflective solder strip brings the gain of component power, estimates component power gain 1.5%.
Claims (10)
1. a solar battery structure, comprise the first conduction type silicon, the second conduction type silicon is covered at the first conduction type silicon face, at the second conduction type silicon face, antireflection layer is set, the positive electrode of requirement is arranged in antireflection layer, the lower end of positive electrode contacts with the second conduction type silicon, and the surface of antireflection layer is stretched out in the upper end of positive electrode; Arrange back of the body electric field at the described first conduction type silicon back side, in back of the body electric field, arrange the back electrode of requirement, the upper end of back electrode contacts with the first conduction type silicon, and the surface of back of the body electric field is exposed in the lower end of back electrode; It is characterized in that: cover tin paste layer at the rear surface of described back electrode.
2. solar battery structure as claimed in claim 1, is characterized in that: the thickness of described tin paste layer is 15 ~ 30 μm.
3. solar battery structure as claimed in claim 1, it is characterized in that: described tin paste layer is covered in the surface of back electrode, and the two ends of back electrode has exposed area.
4. solar battery structure as claimed in claim 3, is characterized in that: the width of described exposed area is 2 ~ 3mm.
5. solar battery structure as claimed in claim 1, is characterized in that: described antireflection layer adopts silicon nitride film, and the thickness of described antireflection layer is 79 ~ 90 μm.
6. solar battery structure as claimed in claim 1, is characterized in that: described back of the body electric field adopts aluminium paste to be made, and back of the body electric field ground thickness is 20 ~ 30 μm.
7. a manufacture method for solar battery structure, is characterized in that, comprises the following steps:
(1) at the cell backside making the first conduction type silicon, the second conduction type silicon, antireflection layer, positive electrode, back of the body electric field and back electrode structure, printing screen plate is adopted to print tin paste layer, tin paste layer is printed in the surface of back electrode, and the print thickness of tin paste layer is 15 ~ 30 μm;
(2) dry after tin paste layer printing.
8. the manufacture method of solar battery structure as claimed in claim 7, is characterized in that: the viscosity of described tin cream is 400 ~ 600PaS, and granularity is 10 ~ 40 μm, and solids content is 70 ~ 90%.
9. the manufacture method of solar battery structure as claimed in claim 7, it is characterized in that: described step (2) bake out temperature is 120 ~ 170 DEG C, drying time is 2 ~ 3 minutes.
10. the manufacture method of solar battery structure as claimed in claim 7, it is characterized in that: in described step (1), during printing, the wide back electrode of 2 ~ 3mm is exposed at the two ends of tin paste layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610021996.3A CN105514187A (en) | 2016-01-13 | 2016-01-13 | Solar battery structure and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610021996.3A CN105514187A (en) | 2016-01-13 | 2016-01-13 | Solar battery structure and manufacturing method thereof |
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| CN105514187A true CN105514187A (en) | 2016-04-20 |
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| CN201610021996.3A Pending CN105514187A (en) | 2016-01-13 | 2016-01-13 | Solar battery structure and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289322A (en) * | 2019-06-05 | 2019-09-27 | 国家电投集团西安太阳能电力有限公司 | IBC solar cell secondary grid line tertiary printing half tone structure |
| CN112599642A (en) * | 2020-12-18 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | Welding method of battery piece and photovoltaic module |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110265870A1 (en) * | 2011-01-19 | 2011-11-03 | Changseo Park | Solar cell |
| CN102729666A (en) * | 2012-06-29 | 2012-10-17 | 陕西众森电能科技有限公司 | Improved secondary printing method for crystalline silicon solar cell |
| CN203812888U (en) * | 2013-10-25 | 2014-09-03 | 常州天合光能有限公司 | Solar cell electrode bringing convenience to welding of solder strip |
| CN204230253U (en) * | 2014-11-27 | 2015-03-25 | 浙江昱辉阳光能源江苏有限公司 | A kind of solar cell with three layers of passivating structure |
| CN105215497A (en) * | 2015-09-11 | 2016-01-06 | 刘畅 | Photovoltaic module crystalline silicon battery plate welding procedure |
| CN205542803U (en) * | 2016-01-13 | 2016-08-31 | 无锡尚德太阳能电力有限公司 | Solar battery structure |
-
2016
- 2016-01-13 CN CN201610021996.3A patent/CN105514187A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110265870A1 (en) * | 2011-01-19 | 2011-11-03 | Changseo Park | Solar cell |
| CN102729666A (en) * | 2012-06-29 | 2012-10-17 | 陕西众森电能科技有限公司 | Improved secondary printing method for crystalline silicon solar cell |
| CN203812888U (en) * | 2013-10-25 | 2014-09-03 | 常州天合光能有限公司 | Solar cell electrode bringing convenience to welding of solder strip |
| CN204230253U (en) * | 2014-11-27 | 2015-03-25 | 浙江昱辉阳光能源江苏有限公司 | A kind of solar cell with three layers of passivating structure |
| CN105215497A (en) * | 2015-09-11 | 2016-01-06 | 刘畅 | Photovoltaic module crystalline silicon battery plate welding procedure |
| CN205542803U (en) * | 2016-01-13 | 2016-08-31 | 无锡尚德太阳能电力有限公司 | Solar battery structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110289322A (en) * | 2019-06-05 | 2019-09-27 | 国家电投集团西安太阳能电力有限公司 | IBC solar cell secondary grid line tertiary printing half tone structure |
| CN112599642A (en) * | 2020-12-18 | 2021-04-02 | 泰州隆基乐叶光伏科技有限公司 | Welding method of battery piece and photovoltaic module |
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Application publication date: 20160420 |