CN103646981B - Embossing welding and the preparation method of assembly for back contact solar cell assembly - Google Patents
Embossing welding and the preparation method of assembly for back contact solar cell assembly Download PDFInfo
- Publication number
- CN103646981B CN103646981B CN201310721046.8A CN201310721046A CN103646981B CN 103646981 B CN103646981 B CN 103646981B CN 201310721046 A CN201310721046 A CN 201310721046A CN 103646981 B CN103646981 B CN 103646981B
- Authority
- CN
- China
- Prior art keywords
- electrode
- welding
- solar cell
- embossing
- contact solar
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000003466 welding Methods 0.000 title claims abstract description 68
- 238000004049 embossing Methods 0.000 title claims abstract description 60
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 35
- 239000011889 copper foil Substances 0.000 claims abstract description 26
- 239000000853 adhesive Substances 0.000 claims abstract description 14
- 230000001070 adhesive effect Effects 0.000 claims abstract description 14
- 238000009413 insulation Methods 0.000 claims abstract description 12
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 9
- 229910052802 copper Inorganic materials 0.000 claims abstract description 9
- 239000010949 copper Substances 0.000 claims abstract description 9
- 238000011282 treatment Methods 0.000 claims abstract description 6
- 238000004132 cross linking Methods 0.000 claims abstract description 5
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 230000005684 electric field Effects 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 238000004080 punching Methods 0.000 claims description 3
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 229920006122 polyamide resin Polymers 0.000 claims description 2
- -1 polypropylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229920005989 resin Polymers 0.000 claims description 2
- 239000011347 resin Substances 0.000 claims description 2
- 230000011218 segmentation Effects 0.000 abstract description 4
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000004568 cement Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a kind of preparation method for back contact solar cell assembly, comprise the steps: that (1) obtains back contact solar cell sheet；(2) embossing welding is set in second electrodes series at the back contact solar cell sheet back side；(3) at the back contact solar cell sheet back side, embossing welding is set relative to the position of the first electrode；(4) heating makes its insulate adhesive linkage fusing crosslinking curing, carries out pressurized treatments simultaneously, makes the Copper Foil at the patterned structure of embossing welding electrically connect with the second electrode one_to_one corresponding of cell piece after puncturing the insulation adhesive linkage of fusing；(5) on embossing welding, welding is coated with stannum copper strips, is concatenated by back contact solar cell sheet；(6) stacking, laminating packaging, i.e. can get back contact solar cell assembly.The embossing welding of interrupted structure (segmentation) that the present invention uses, not only makes welding and the second electrode be connected, and collectively forms the second new conductive electrode, and achieves and being dielectrically separated from of cell back field.
Description
Technical field
The present invention relates to a kind of embossing welding for back contact solar cell assembly and the preparation method of assembly, belong to solar cell field.
Background technology
Conventional Fossil fuel is the most depleted, and in existing sustainable energy, solar energy one beyond doubt cleans most, the most universal and most potential alternative energy source.At present, in all of solaode, crystal silicon solar energy battery is one of solaode obtaining business promotion on a large scale, this is owing to silicon materials have extremely abundant reserves in the earth's crust, other kinds of solaode compared by silicon solar cell simultaneously, has electric property and the mechanical performance of excellence.Therefore, crystal-silicon solar cell at photovoltaic art in occupation of consequence.High efficiency is the development trend of current crystal-silicon solar cell, by improving surface-texturing, selective emitter junction, front surface and the passivation of back surface, laser buries the technology such as grid to improve the transformation efficiency of solaode, but owing to it needs special equipment and complicated technological process, industrialization process is restricted.
At present, back contact solar cell assembly (MWT solar cell) receives everybody extensive concern, have an advantage in that: owing to its front does not has main gate line, positive pole and negative pole all at the back side of cell piece, decrease the shading of cell piece, improve the conversion efficiency of cell piece, simultaneously because positive pole and negative pole are the most overleaf, when making assembly, it is possible to reduce the shading of cell piece is affected by welding, use new packaged type can reduce the series resistance of cell piece simultaneously, reduce the power loss of cell piece.
The preparation method of traditional back contact solar cell sheet is: making herbs into wool, diffusion, etches, clean, plated film, punch, print, sinter.After these steps complete, form anelectrode, negative electrode and back of the body electric field at the cell piece back side.For conventional P-type silicon sheet, the anelectrode of back contact battery sheet is in conjunction with the positive pole of the aluminum back surface field composition battery of battery, and the hole beaten by laser is guided to cell backside negative electrode and constituted battery cathode.So when cell piece interconnects, first battery negative electrodes and second cell positive electrode to be attached, thus short circuit phenomenon occur in the anelectrode of inevitable battery and negative electrode.
Existing method typically has 2 kinds, one is to use the conductive backings matched with back contacts back of solar cell electrode structure, conductive backings and battery connection also need to conducting resinl, in addition, EVA also needs perforate in advance to process, thus whole manufacturing process not only technique is loaded down with trivial details, and need special corresponding EVA punch device and the printing equipment of conducting resinl；Additionally, the preparation technology of conductive backings itself causes its price comparison high, the component price that the most this method makes is higher, is unfavorable for business-like popularization.Second method is by adding insulation spacer or printing insulating cement on back contact solar cell, the most directly carries out welding common welding (as being coated with stannum copper strips), and uses conventional solar energy backboard to be packaged；The cost of manufacture of this method is relatively low, and insulation spacer needs perforate in advance, and being coated with stannum copper strips needs bending to process, and needs exactitude position during welding, and technique is the most more complicated.Printing insulating cement is a kind of relatively good processing technology, but requires higher for printing quality control, controls the bad local electric leakage phenomenon that easily causes, and additionally the solidification of insulating cement controls the most critically important, therefore needs further to optimize and improve.
Summary of the invention
It is an object of the present invention to provide a kind of embossing welding for back contact solar cell assembly and the preparation method of assembly.
For reaching above-mentioned purpose, the technical solution used in the present invention is: a kind of embossing welding for back contact solar cell assembly, and the copper foil layer arranged including stacking and insulating bond, described copper foil layer is provided with patterned structure.
In technique scheme, described insulating bond one in polyamide resin layer, epoxy resin layer and polypropylene resin layer.
In technique scheme, the thickness of described copper foil layer is 5 ~ 15 microns；The thickness of described insulating bond is 10 ~ 30 microns.
In technique scheme, described patterned structure is in cone, truncated cone-shaped or pyramid.
The present invention is claimed a kind of preparation method for back contact solar cell assembly simultaneously, comprises the steps:
(1) carry out silicon chip punching, print, sinter, form the first electrode, the second electrode and back of the body electric field at silicon chip back side；Described first electrode and the opposite polarity of the second electrode, described first electrode is identical with the polarity of back of the body electric field；Described second electrode is set up in parallel, and forms at least 2 row the second electrodes series；Obtain back contact solar cell sheet；
(2) embossing welding is set in second electrodes series at the above-mentioned back contact solar cell sheet back side；The insulating bond making embossing welding is close to the cell piece back side；
The patterned structure of described embossing welding is interrupted structure, itself and the second electrode one_to_one corresponding in the second electrodes series；The quantity of embossing welding is identical with the columns of the second electrodes series；
(3) at the above-mentioned back contact solar cell sheet back side, embossing welding is set relative to the position of the first electrode；The insulating bond making embossing welding is close to the cell piece back side；
The patterned structure of described embossing welding is interrupted structure or continuous structure；
(4) cell piece arranging embossing welding is heated, make its insulate adhesive linkage fusing crosslinking curing, carry out pressurized treatments simultaneously, make the Copper Foil at the patterned structure of the embossing welding in step (2) electrically connect with the second electrode one_to_one corresponding of cell piece after puncturing the insulation adhesive linkage of fusing；The Copper Foil at the patterned structure of the embossing welding in step (3) is made to electrically connect with the first electrode of cell piece after puncturing the insulation adhesive linkage of fusing；
(5) on embossing welding, welding is coated with stannum copper strips, is concatenated by back contact solar cell sheet；
(6) stacking, laminating packaging, i.e. can get back contact solar cell assembly.
Above, at least one end of the embossing welding in step (2) and step (3) extends to the end of cell piece along its length.
Described first electrode and the second electrode are relative, such as, when the first electrode is positive pole, the second electrode is negative pole, and vice versa.
In described step (1), be usually silicon chip carried out making herbs into wool, system knot, arrange antireflective coating, punch, print electrode, the common process such as sintering processes；The order of these processing steps can be adjusted according to prior art.
First electrode can be the one in silver electrode, aerdentalloy electrode.
In step (4), the Copper Foil of non-embossing part not with electrode contact.For back contact battery, patterned structure is arranged on the electrode zone different from silicon substrate conduction type, it is typically segmentation, the setting of patterned structure ensure that the second electrode and copper foil layer are fully contacted, the setting of tack coat simultaneously it also avoid Copper Foil and contacts formation short circuit with silicon substrate, therefore need not the insulating barrier of traditional handicraft is reprocessed, simplify technological process.
In technique scheme, the heating-up temperature in described step (4) is 100 ~ 200 DEG C, and the pressure of pressurized treatments is 1 ~ 2MPa.
Owing to technique scheme is used, the present invention compared with prior art has the advantage that
1. the present invention develops a kind of embossing welding for back contact solar cell assembly, this welding can realize being dielectrically separated from of cell piece back side positive and negative electrode, compared with existing tin-coated welding strip, it is not only convenient for welding, and save material, reduce production cost, there is good operability, practicality.
2. the present invention develops the preparation method of a kind of back contact solar cell assembly, the embossing welding of the interrupted structure (segmentation) used, not only make welding and the second electrode be connected, collectively form the second new conductive electrode, and achieve and being dielectrically separated from of cell back field.
3. the embossing welding (or using interrupted structure) of the continuous structure that the present invention uses, makes welding directly be connected with aluminum back surface field, constitutes the first conductive electrode together, the most both met the passivated reflection reducing to battery aluminum back surface field and penetrated requirement, and solved simultaneously and be difficult to Welding Problems.
4. the preparation method of the present invention is simple, it is easy to accomplish, and cost is relatively low, has good operability, practicality, is suitable to industrial applications.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention one；
Fig. 2 is the structural representation of the embodiment of the present invention two；
Fig. 3 is the assemble cross-section in the embodiment of the present invention three at second electrode；
Fig. 4 is the assemble cross-section in the embodiment of the present invention three at first electrode.
1, glass；2, EVA layer；3, back contact solar cell sheet；4, aluminum back surface field；5, conductive electrode；6, insulation adhesive linkage；7, copper foil layer；8, it is coated with stannum copper strips；9, backboard；10, patterned structure.
Detailed description of the invention
Below in conjunction with embodiment, the invention will be further described:
Embodiment one
Shown in Figure 1, a kind of embossing welding for back contact solar cell assembly, the copper foil layer 7 arranged including stacking and insulating bond 6, described copper foil layer is provided with patterned structure 10.
Described patterned structure uses continuous patterned structure, and it can directly contact with aluminum back surface field, and embossing is cone.
The thickness of described copper foil layer is 15 microns.Described insulating bond is epoxy resin layer, and thickness is 20 microns.
Embodiment two
Shown in Figure 2, a kind of embossing welding for back contact solar cell assembly, the copper foil layer 7 arranged including stacking and insulating bond 6, described copper foil layer is provided with patterned structure 10.
Described patterned structure uses segmentation embossing, i.e. discontinuously structure, and embossing is cone.Patterned structure is arranged on electrode zone, copper foil layer and electrode contact, realizes being dielectrically separated from by insulating bond.
The copper thickness of described embossing Copper Foil is 12 microns.Described insulating bond is epoxy resin layer, and thickness is 25 microns.
Embodiment three
A kind of preparation method for back contact solar cell assembly, comprises the steps:
(1) carry out silicon chip punching, print, sinter, form the first electrode, the second electrode and back of the body electric field at silicon chip back side；Described first electrode and the opposite polarity of the second electrode, described first electrode is identical with the polarity of back of the body electric field；Described second electrode is set up in parallel, and forms at least 2 row the second electrodes series；Obtain back contact solar cell sheet；
(2) embossing welding is set in second electrodes series at the above-mentioned back contact solar cell sheet back side；The insulating bond making embossing welding is close to the cell piece back side；
The patterned structure of described embossing welding is interrupted structure, itself and the second electrode one_to_one corresponding in the second electrodes series；The quantity of embossing welding is identical with the columns of the second electrodes series；
(3) at the above-mentioned back contact solar cell sheet back side, embossing welding is set relative to the position of the first electrode；The insulating bond making embossing welding is close to the cell piece back side；
The patterned structure of described embossing welding is continuous structure；
(4) cell piece arranging embossing welding is heated under 180 degree, make its insulate adhesive linkage fusing crosslinking curing, under 1.3MPa, carry out pressurized treatments simultaneously, make the Copper Foil at the patterned structure of the embossing welding in step (2) electrically connect with the second electrode one_to_one corresponding of cell piece after puncturing the insulation adhesive linkage of fusing；The Copper Foil at the patterned structure of the embossing welding in step (3) is made to electrically connect with the first electrode of cell piece after puncturing the insulation adhesive linkage of fusing；After crosslinking curing, the thickness not having the insulation adhesive linkage of embossing part is 10 microns；
(5) on embossing welding, welding is coated with stannum copper strips, is concatenated by back contact solar cell sheet；
(6) stacking, laminating packaging, i.e. can get back contact solar cell assembly.
Seeing shown in Fig. 3 ~ 4, battery component includes glass 1, EVA layer 2, back contact solar cell sheet 3, aluminum back surface field 4, conductive electrode 5, insulation adhesive linkage 6, copper foil layer 7 the most successively, is coated with stannum copper strips 8 and backboard 9.
Claims (7)
1. the embossing welding for back contact solar cell assembly, it is characterized in that: include copper foil layer and insulating bond that stacking arranges, described copper foil layer is provided with patterned structure, and the thickness of the insulating bond in region corresponding with patterned structure is less than the thickness of the insulating bond in other regions.
Embossing welding the most according to claim 1, it is characterised in that: described insulating bond one in polyamide resin layer, epoxy resin layer and polypropylene resin layer.
Embossing welding the most according to claim 1, it is characterised in that: the thickness of described copper foil layer is 5～15 microns；The thickness of described insulating bond is 10～30 microns.
Embossing welding the most according to claim 1, it is characterised in that: described patterned structure is in cone, truncated cone-shaped or pyramid.
5. the preparation method for back contact solar cell assembly, it is characterised in that comprise the steps:
(1) carry out silicon chip punching, print, sinter, form the first electrode, the second electrode and back of the body electric field at silicon chip back side；Described first electrode and the opposite polarity of the second electrode, described first electrode is identical with the polarity of back of the body electric field；Described second electrode is set up in parallel, and forms at least 2 row the second electrodes series；Obtain back contact solar cell sheet；
(2) embossing welding as claimed in claim 1 is set in second electrodes series at the above-mentioned back contact solar cell sheet back side；The insulating bond making embossing welding is close to the cell piece back side；
The patterned structure of described embossing welding is interrupted structure, itself and the second electrode one_to_one corresponding in the second electrodes series；The quantity of embossing welding is identical with the columns of the second electrodes series；
(3) at the above-mentioned back contact solar cell sheet back side, embossing welding as claimed in claim 1 is set relative to the position of the first electrode；The insulating bond making embossing welding is close to the cell piece back side；
The patterned structure of described embossing welding is interrupted structure or continuous structure；
(4) cell piece arranging embossing welding is heated, make its insulate adhesive linkage fusing crosslinking curing, carry out pressurized treatments simultaneously, make the Copper Foil at the patterned structure of the embossing welding in step (2) electrically connect with the second electrode one_to_one corresponding of cell piece after puncturing the insulation adhesive linkage of fusing；The Copper Foil at the patterned structure of the embossing welding in step (3) is made to electrically connect with the first electrode of cell piece after puncturing the insulation adhesive linkage of fusing；
(5) on embossing welding, welding is coated with stannum copper strips, is concatenated by back contact solar cell sheet；
(6) stacking, laminating packaging, i.e. can get back contact solar cell assembly.
Preparation method the most according to claim 5, it is characterised in that: the heating-up temperature in described step (4) is 100～200 DEG C, and the pressure of pressurized treatments is 1～2MPa.
Preparation method the most according to claim 5, it is characterised in that: in described step (4), the Copper Foil of non-embossing part not with electrode contact.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310721046.8A CN103646981B (en) | 2013-12-24 | 2013-12-24 | Embossing welding and the preparation method of assembly for back contact solar cell assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310721046.8A CN103646981B (en) | 2013-12-24 | 2013-12-24 | Embossing welding and the preparation method of assembly for back contact solar cell assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103646981A CN103646981A (en) | 2014-03-19 |
| CN103646981B true CN103646981B (en) | 2016-09-14 |
Family
ID=50252173
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310721046.8A Active CN103646981B (en) | 2013-12-24 | 2013-12-24 | Embossing welding and the preparation method of assembly for back contact solar cell assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103646981B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047731B (en) * | 2015-07-02 | 2017-12-22 | 苏州阿特斯阳光电力科技有限公司 | A kind of back contact solar cell component |
| JP6773445B2 (en) * | 2016-04-08 | 2020-10-21 | 横浜ゴム株式会社 | Solar cell with connection and solar module |
| CN108258073A (en) * | 2016-12-27 | 2018-07-06 | 阿特斯阳光电力集团有限公司 | Photovoltaic welding belt and photovoltaic module |
| CN106914671A (en) * | 2017-03-13 | 2017-07-04 | 南京日托光伏科技股份有限公司 | A kind of MWT photovoltaic modulies draw welding method |
| CN109802012B (en) * | 2019-01-24 | 2021-01-01 | 常州时创能源股份有限公司 | Preparation method of solar cell module |
| CN110707170B (en) * | 2019-08-26 | 2022-02-18 | 泰州隆基乐叶光伏科技有限公司 | Back contact solar cell module production method and back contact solar cell module |
| WO2021036201A1 (en) * | 2019-08-26 | 2021-03-04 | 泰州隆基乐叶光伏科技有限公司 | Method for producing back-contact solar cell assembly and back-contact solar cell assembly |
| CN110571305B (en) * | 2019-08-26 | 2022-01-07 | 泰州隆基乐叶光伏科技有限公司 | Back contact solar cell module production method and back contact solar cell module |
| CN110690295B (en) * | 2019-08-29 | 2023-05-05 | 泰州隆基乐叶光伏科技有限公司 | Back contact solar cell module production method and back contact solar cell module |
| CN113990957B (en) * | 2021-09-28 | 2024-01-23 | 江苏日托光伏科技股份有限公司 | Integrated composite type local conductive core plate and application thereof |
| CN114649443B (en) * | 2022-03-03 | 2024-04-16 | 浙江爱旭太阳能科技有限公司 | Back contact solar cell string, preparation method thereof, cell assembly and photovoltaic system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201532955U (en) * | 2009-11-23 | 2010-07-21 | 宁波太阳能电源有限公司 | Silicon solar cell |
| CN102222726A (en) * | 2011-05-13 | 2011-10-19 | 晶澳（扬州）太阳能科技有限公司 | Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation |
| CN103443934A (en) * | 2011-03-23 | 2013-12-11 | 迪睿合电子材料有限公司 | Solar cell module, manufacturing method for solar cell module, and reel-wound body with tab wire wound therearound |
| CN103456843A (en) * | 2013-09-17 | 2013-12-18 | 连云港神舟新能源有限公司 | Method for manufacturing back contact type crystalline silicon solar cell component |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPWO2009041506A1 (en) * | 2007-09-26 | 2011-01-27 | 日立化成工業株式会社 | Conductor connecting member, method for manufacturing the same, connection structure, and solar cell module |
| KR20100030188A (en) * | 2008-09-09 | 2010-03-18 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
| KR101072357B1 (en) * | 2009-05-21 | 2011-10-11 | 경북대학교 산학협력단 | Solar cell with novel electrode structure and method thereof |
-
2013
- 2013-12-24 CN CN201310721046.8A patent/CN103646981B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN201532955U (en) * | 2009-11-23 | 2010-07-21 | 宁波太阳能电源有限公司 | Silicon solar cell |
| CN103443934A (en) * | 2011-03-23 | 2013-12-11 | 迪睿合电子材料有限公司 | Solar cell module, manufacturing method for solar cell module, and reel-wound body with tab wire wound therearound |
| CN102222726A (en) * | 2011-05-13 | 2011-10-19 | 晶澳（扬州）太阳能科技有限公司 | Technology for manufacturing interlaced back contact (IBC) crystalline silicon solar battery with ion implantation |
| CN103456843A (en) * | 2013-09-17 | 2013-12-18 | 连云港神舟新能源有限公司 | Method for manufacturing back contact type crystalline silicon solar cell component |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103646981A (en) | 2014-03-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103646981B (en) | Embossing welding and the preparation method of assembly for back contact solar cell assembly | |
| CN102646728B (en) | Back electrode structure of a kind of back contact silicon solar battery sheet and preparation method thereof | |
| WO2016045227A1 (en) | Main-gate-free and high-efficiency back contact solar cell module, assembly and preparation process | |
| CN106057923B (en) | Back contact solar cell and solar cell module | |
| WO2017177726A1 (en) | Solar cell module and method for manufacturing same, assembly, and system | |
| CN104064608A (en) | Main grid-free back-contact solar cell module and preparation method for same | |
| CN204857754U (en) | Solar cell assembly | |
| CN104269462A (en) | High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology | |
| CN104269454B (en) | High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology | |
| WO2018176182A1 (en) | Cell string formed by connecting n-type ibc solar cells in spliced-sheet manner, preparation method therefor, assembly and system | |
| CN104576820A (en) | Method for producing a backside contact in a solar cell device and solar cell device | |
| CN109904268A (en) | Back contacts solar module and its manufacturing method | |
| CN104269453A (en) | High-efficiency back contact solar cell back sheet without main grids, high-efficiency back contact solar cell assembly without main grids and manufacturing technology | |
| CN102683478B (en) | A kind of back of solar cell electrode structure and preparation method thereof | |
| CN204204885U (en) | Without main grid high efficiency back contact solar cell backboard | |
| CN110707170B (en) | Back contact solar cell module production method and back contact solar cell module | |
| CN102779862A (en) | Back-side electrode structure of back-contact solar cell and manufacture method of back electrode structure | |
| CN104319301A (en) | Main gate-free, high-efficiency and back-contact solar battery backplane, assembly and preparation process | |
| CN204204882U (en) | Without main grid high efficiency back contact solar cell assembly | |
| CN110571305B (en) | Back contact solar cell module production method and back contact solar cell module | |
| CN204088340U (en) | Without main grid high efficiency back contact solar cell backboard | |
| CN104347746A (en) | Main-grid-free high-efficiency back contact solar battery module, main-grid-free high-efficiency back contact solar battery assembly and preparation process | |
| CN204088344U (en) | Without main grid high efficiency back contact solar cell module and assembly | |
| CN206451721U (en) | A kind of back contact solar cell string and component, system | |
| CN204088342U (en) | Without main grid high efficiency back contact solar cell assembly |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |