CN103646981A - Embossing solder strip used for back contact solar cell component and preparation method of component - Google Patents
Embossing solder strip used for back contact solar cell component and preparation method of component Download PDFInfo
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- CN103646981A CN103646981A CN201310721046.8A CN201310721046A CN103646981A CN 103646981 A CN103646981 A CN 103646981A CN 201310721046 A CN201310721046 A CN 201310721046A CN 103646981 A CN103646981 A CN 103646981A
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- 238000004049 embossing Methods 0.000 title claims abstract description 61
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- 229910000679 solder Inorganic materials 0.000 title abstract 7
- 210000003850 cellular structure Anatomy 0.000 title abstract 3
- 238000003466 welding Methods 0.000 claims abstract description 60
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000011889 copper foil Substances 0.000 claims abstract description 27
- 238000011282 treatment Methods 0.000 claims abstract description 6
- 238000010030 laminating Methods 0.000 claims abstract description 4
- 238000004806 packaging method and process Methods 0.000 claims abstract description 4
- 238000009413 insulation Methods 0.000 claims description 34
- 239000010410 layer Substances 0.000 claims description 25
- 239000012790 adhesive layer Substances 0.000 claims description 17
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000000853 adhesive Substances 0.000 claims description 12
- 230000001070 adhesive effect Effects 0.000 claims description 12
- 238000007639 printing Methods 0.000 claims description 8
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 7
- 230000005684 electric field Effects 0.000 claims description 7
- 238000005245 sintering Methods 0.000 claims description 5
- 238000004132 cross linking Methods 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 4
- 229920000647 polyepoxide Polymers 0.000 claims description 4
- 239000004925 Acrylic resin Substances 0.000 claims description 2
- 229920000178 Acrylic resin Polymers 0.000 claims description 2
- 239000004952 Polyamide Substances 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 230000011218 segmentation Effects 0.000 abstract description 4
- 238000002955 isolation Methods 0.000 abstract description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052802 copper Inorganic materials 0.000 abstract description 2
- 239000010949 copper Substances 0.000 abstract description 2
- 210000004027 cell Anatomy 0.000 abstract 5
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000000034 method Methods 0.000 description 18
- 239000004411 aluminium Substances 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004568 cement Substances 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 235000008216 herbs Nutrition 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 210000002268 wool Anatomy 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010009 beating Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000002803 fossil fuel Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000003908 quality control method Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0516—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module specially adapted for interconnection of back-contact solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention discloses a preparation method of a back contact solar cell component. The preparation method comprises the following steps of: (1) obtaining back contact solar cell sheets; (2) arranging an embossing solder strip on a second electrode array which is located at the backside of each back contact solar cell sheet; (3) arranging an embossing solder strip on the backside of each back contact solar cell sheet, corresponding to the position of a first electrode; (4) heating to melt down, cross-link and solidify an insulating bonding layer, and meanwhile performing a pressurizing treatment to enable a copper foil located at the embossing structure of the embossing solder strip to be electrically connected with a second electrode of each cell sheet in one-to-one correspondence after the copper foil punctures the melted-down insulating bonding layer; (5) welding a tin-coated copper strip on the embossing solder strip to serially connecting the back contact solar cell sheets; (6) stacking, laminating and packaging to obtain the back contact solar cell component. The embossing solder strip in an interrupted structure (segmentation) adopted in the invention not only enables the solder strip and the second electrode to be connected to compose a new second conductive electrode, but also realizes insulating isolation from the back field of the battery.
Description
Technical field
The present invention relates to a kind of embossing welding for back contact solar cell assembly and the preparation method of assembly, belong to solar cell field.
Background technology
Conventional fossil fuel is approach exhaustion day by day, and in existing sustainable energy, solar energy is undoubtedly the most clean, the most general and most potential a kind of alternative energy source.At present, in all solar cells, crystal silicon solar energy battery is one of solar cell obtaining business promotion on a large scale, this is because silicon materials have very abundant reserves in the earth's crust, silicon solar cell is compared the solar cell of other types simultaneously, has excellent electric property and mechanical performance.Therefore, crystal-silicon solar cell in photovoltaic field in occupation of consequence.High efficiency is the development trend of current crystal-silicon solar cell, by improving the passivation on surface-texturing, selective emitter junction, front surface and back of the body surface, laser buries the transformation efficiency that the technology such as grid improve solar cell, but because it needs special equipment and complicated technological process, industrialization process is restricted.
At present, back contact solar cell assembly (MWT solar cell) has been subject to everybody extensive concern, its advantage is: because its front does not have main grid line, anodal and negative pole is all at the back side of cell piece, reduced the shading of cell piece, improved the conversion efficiency of cell piece, simultaneously due to anodal and negative pole all overleaf, when making assembly, can reduce the shading impact of welding on cell piece, adopt new packaged type can reduce the series resistance of cell piece simultaneously, reduce the power loss of cell piece.
The preparation method of traditional back contact solar cell sheet is: making herbs into wool, diffusion knot processed, etching, cleaning, plated film, punching, printing, sintering.After these steps complete, at the cell piece back side, form positive electrode, negative electrode and back of the body electric field.For conventional P type silicon chip, the positive electrode connection of back of the body contact cell piece forms the positive pole of battery with the aluminium back surface field of battery, and the hole of beating by laser is guided to cell backside negative electrode and formed battery cathode.When cell piece is interconnected, first battery negative electrode is connected with second battery positive electrode like this, thereby there is short circuit phenomenon in positive electrode and the negative electrode of inevitable battery.
Existing method generally has 2 kinds, the one, use with the back of the body and contact the conductive backings that back of solar cell electrode structure matches, conductive backings is connected and also needs conducting resinl with battery, in addition, EVA also needs perforate in advance to process, thereby whole manufacturing process not only technique is loaded down with trivial details, and need special corresponding EVA punch device and the printing equipment of conducting resinl; In addition, the preparation technology of conductive backings itself causes its price comparison high, and the component price that therefore this method is made is higher, is unfavorable for business-like popularization.Second method is by add insulation spacer or printing insulating cement on back contact solar cell, then directly welds common welding (as being coated with tin copper strips), and uses conventional solar energy backboard to encapsulate; The cost of manufacture of this method is relatively low, and insulation spacer needs perforate in advance, and being coated with tin copper strips needs bending to process, and needs exactitude position during welding, and technique is more complicated also.Printing insulating cement is a kind of manufacture craft relatively preferably, but has relatively high expectations for printing quality control, controls the bad local leaky that very easily causes, and the curing control of insulating cement is also very important in addition, therefore needs further to optimize and improve.
Summary of the invention
The object of the invention is to provide a kind of embossing welding for back contact solar cell assembly and the preparation method of assembly.
For achieving the above object, the technical solution used in the present invention is: a kind of embossing welding for back contact solar cell assembly, comprise copper foil layer and the insulation adhesive layer of stacked setting, and described copper foil layer is provided with patterned structure.
In technique scheme, described insulation adhesive layer is selected from a kind of in polyamide layer, epoxy resin layer and acrylic resin layer.
In technique scheme, the thickness of described copper foil layer is 5 ~ 15 microns; The thickness of described insulation adhesive layer is 10 ~ 30 microns.
In technique scheme, described patterned structure is taper shape, truncated cone-shaped or pyramid.
The present invention asks for protection a kind of preparation method for back contact solar cell assembly simultaneously, comprises the steps:
(1) silicon chip is punched, printing, sintering, at silicon chip back side, form the first electrode, the second electrode and back of the body electric field; The polarity of described the first electrode and the second electrode is contrary, and described the first electrode is identical with the polarity of back of the body electric field; Described the second electrode is set up in parallel, and forms at least 2 row the second electrodes series; Obtain back contact solar cell sheet;
(2) in second electrodes series at the above-mentioned back contact solar cell sheet back side, embossing welding is set; Make the insulation adhesive layer of embossing welding be close to the cell piece back side;
The patterned structure of described embossing welding is interrupted structure, and it is corresponding one by one with the second electrode in the second electrodes series; The quantity of embossing welding is identical with the columns of the second electrodes series;
(3) at the above-mentioned back contact solar cell sheet back side, the position with respect to the first electrode arranges embossing welding; Make the insulation adhesive layer of embossing welding be close to the cell piece back side;
The patterned structure of described embossing welding is interrupted structure or continuous structure;
(4) to being set, heats the cell piece of embossing welding, make its fusing of insulation adhesive linkage crosslinking curing, carry out pressurized treatments simultaneously, make the Copper Foil at the patterned structure place of the embossing welding in step (2) puncture after the insulation adhesive linkage of fusing the second electrode corresponding electrical connection one by one with cell piece; After making the Copper Foil at the patterned structure place of the embossing welding in step (3) puncture the insulation adhesive linkage of fusing, be electrically connected to the first electrode of cell piece;
(5) on embossing welding, welding is coated with tin copper strips, and back contact solar cell sheet is concatenated;
(6) stacked, laminating packaging, can obtain back contact solar cell assembly.
Above, at least one end of the embossing welding in step (2) and step (3) extends to the end of cell piece along its length.
Described the first electrode is relative with the second electrode, and for example, when the first electrode is positive pole, the second electrode is negative pole, and vice versa.
In described step (1), be generally by silicon chip carry out making herbs into wool, system knot, antireflective coating is set, punches, prints electrode, the common process such as sintering processes; The order of these processing steps can be adjusted according to prior art.
The first electrode can be a kind of in silver electrode, aerdentalloy electrode.
In step (4), not the Copper Foil of embossing part not with electrode contact.For back of the body contact battery, patterned structure is arranged on the electrode zone different from silicon substrate conduction type, normally segmentation, arranging of patterned structure guaranteed that the second electrode fully contacts with copper foil layer, the setting of tack coat simultaneously has also been avoided Copper Foil to contact with silicon substrate and has been formed short circuit, therefore do not need the insulating barrier of traditional handicraft to reprocess, simplified technological process.
In technique scheme, the heating-up temperature in described step (4) is 100 ~ 200 ℃, and the pressure of pressurized treatments is 1 ~ 2MPa.
Because technique scheme is used, the present invention compared with prior art has following advantages:
1. the present invention has developed a kind of embossing welding for back contact solar cell assembly, this welding can be realized the insulation isolation of cell piece back side positive and negative electrode, compare with existing tin-coated welding strip, not only be convenient to welding, and saving material, reduce production cost, there is good operability, practicality.
2. the present invention has developed a kind of preparation method of back contact solar cell assembly, the embossing welding of the interrupted structure (segmentation) adopting, not only make welding be connected with the second electrode, jointly form the second new conductive electrode, and realized with the insulation of cell back field and having isolated.
3. the embossing welding (or adopting interrupted structure) of the continuous structure that the present invention adopts, welding is directly connected with aluminium back surface field, form together the first conductive electrode, so both met the passivated reflection reducing of battery aluminium back surface field is penetrated to requirement, solved simultaneously and be difficult for Welding Problems.
4. preparation method of the present invention is simple, be easy to realize, and cost is lower, has good operability, practicality, is suitable for industrial applications.
Accompanying drawing explanation
Fig. 1 is the structural representation of the embodiment of the present invention one;
Fig. 2 is the structural representation of the embodiment of the present invention two;
Fig. 3 is the assembly cutaway view at the second electrode place in the embodiment of the present invention three;
Fig. 4 is the assembly cutaway view at the first electrode place in the embodiment of the present invention three.
1, glass; 2, EVA layer; 3, back contact solar cell sheet; 4, aluminium back surface field; 5, conductive electrode; 6, insulation adhesive linkage; 7, copper foil layer; 8, be coated with tin copper strips; 9, backboard; 10, patterned structure.
Embodiment
Below in conjunction with embodiment, the invention will be further described:
Embodiment mono-
Shown in Figure 1, a kind of embossing welding for back contact solar cell assembly, comprises copper foil layer 7 and the insulation adhesive layer 6 of stacked setting, and described copper foil layer is provided with patterned structure 10.
Described patterned structure adopts continuous patterned structure, and it can directly contact with aluminium back surface field, and embossing is conical.
The thickness of described copper foil layer is 15 microns.Described insulation adhesive layer is epoxy resin layer, and thickness is 20 microns.
Embodiment bis-
Shown in Figure 2, a kind of embossing welding for back contact solar cell assembly, comprises copper foil layer 7 and the insulation adhesive layer 6 of stacked setting, and described copper foil layer is provided with patterned structure 10.
Described patterned structure adopts segmentation embossing, i.e. interrupted structure, and embossing be taper shape.Patterned structure is arranged on electrode zone, and copper foil layer only and electrode contact, is realized insulation isolation by insulation adhesive layer.
The copper thickness of described embossing Copper Foil is 12 microns.Described insulation adhesive layer is epoxy resin layer, and thickness is 25 microns.
Embodiment tri-
A preparation method for back contact solar cell assembly, comprises the steps:
(1) silicon chip is punched, printing, sintering, at silicon chip back side, form the first electrode, the second electrode and back of the body electric field; The polarity of described the first electrode and the second electrode is contrary, and described the first electrode is identical with the polarity of back of the body electric field; Described the second electrode is set up in parallel, and forms at least 2 row the second electrodes series; Obtain back contact solar cell sheet;
(2) in second electrodes series at the above-mentioned back contact solar cell sheet back side, embossing welding is set; Make the insulation adhesive layer of embossing welding be close to the cell piece back side;
The patterned structure of described embossing welding is interrupted structure, and it is corresponding one by one with the second electrode in the second electrodes series; The quantity of embossing welding is identical with the columns of the second electrodes series;
(3) at the above-mentioned back contact solar cell sheet back side, the position with respect to the first electrode arranges embossing welding; Make the insulation adhesive layer of embossing welding be close to the cell piece back side;
The patterned structure of described embossing welding is continuous structure;
(4) to being set, heats under 180 degree the cell piece of embossing welding, make its fusing of insulation adhesive linkage crosslinking curing, simultaneously under 1.3MPa, carry out pressurized treatments, make the Copper Foil at the patterned structure place of the embossing welding in step (2) puncture after the insulation adhesive linkage of fusing the second electrode corresponding electrical connection one by one with cell piece; After making the Copper Foil at the patterned structure place of the embossing welding in step (3) puncture the insulation adhesive linkage of fusing, be electrically connected to the first electrode of cell piece; After crosslinking curing, there is no the thickness of the insulation adhesive linkage of embossing part is 10 microns;
(5) on embossing welding, welding is coated with tin copper strips, and back contact solar cell sheet is concatenated;
(6) stacked, laminating packaging, can obtain back contact solar cell assembly.
Shown in Fig. 3 ~ 4, battery component comprises successively from top to bottom glass 1, EVA layer 2, back contact solar cell sheet 3, aluminium back surface field 4, conductive electrode 5, insulation adhesive linkage 6, copper foil layer 7, is coated with tin copper strips 8 and backboard 9.
Claims (6)
1. for an embossing welding for back contact solar cell assembly, it is characterized in that: comprise copper foil layer and the insulation adhesive layer of stacked setting, described copper foil layer is provided with patterned structure.
2. embossing welding according to claim 1, is characterized in that: described insulation adhesive layer is selected from a kind of in polyamide layer, epoxy resin layer and acrylic resin layer.
3. embossing welding according to claim 1, is characterized in that: the thickness of described copper foil layer is 5 ~ 15 microns; The thickness of described insulation adhesive layer is 10 ~ 30 microns.
4. embossing welding according to claim 1, is characterized in that: described patterned structure is taper shape, truncated cone-shaped or pyramid.
5. for a preparation method for back contact solar cell assembly, it is characterized in that, comprise the steps:
(1) silicon chip is punched, printing, sintering, at silicon chip back side, form the first electrode, the second electrode and back of the body electric field; The polarity of described the first electrode and the second electrode is contrary, and described the first electrode is identical with the polarity of back of the body electric field; Described the second electrode is set up in parallel, and forms at least 2 row the second electrodes series; Obtain back contact solar cell sheet;
(2) embossing welding as claimed in claim 1 is set in second electrodes series at the above-mentioned back contact solar cell sheet back side; Make the insulation adhesive layer of embossing welding be close to the cell piece back side;
The patterned structure of described embossing welding is interrupted structure, and it is corresponding one by one with the second electrode in the second electrodes series; The quantity of embossing welding is identical with the columns of the second electrodes series;
(3) at the above-mentioned back contact solar cell sheet back side, the position with respect to the first electrode arranges embossing welding as claimed in claim 1; Make the insulation adhesive layer of embossing welding be close to the cell piece back side;
The patterned structure of described embossing welding is interrupted structure or continuous structure;
(4) to being set, heats the cell piece of embossing welding, make its fusing of insulation adhesive linkage crosslinking curing, carry out pressurized treatments simultaneously, make the Copper Foil at the patterned structure place of the embossing welding in step (2) puncture after the insulation adhesive linkage of fusing the second electrode corresponding electrical connection one by one with cell piece; After making the Copper Foil at the patterned structure place of the embossing welding in step (3) puncture the insulation adhesive linkage of fusing, be electrically connected to the first electrode of cell piece; (not the Copper Foil of embossing part not with electrode contact)
(5) on embossing welding, welding is coated with tin copper strips, and back contact solar cell sheet is concatenated;
(6) stacked, laminating packaging, can obtain back contact solar cell assembly.
6. preparation method according to claim 5, is characterized in that: the heating-up temperature in described step (4) is 100 ~ 200 ℃, and the pressure of pressurized treatments is 1 ~ 2MPa.
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| CN201310721046.8A CN103646981B (en) | 2013-12-24 | 2013-12-24 | Embossing welding and the preparation method of assembly for back contact solar cell assembly |
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| CN201310721046.8A CN103646981B (en) | 2013-12-24 | 2013-12-24 | Embossing welding and the preparation method of assembly for back contact solar cell assembly |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105047731A (en) * | 2015-07-02 | 2015-11-11 | 苏州阿特斯阳光电力科技有限公司 | Back contact solar cell module |
| CN106914671A (en) * | 2017-03-13 | 2017-07-04 | 南京日托光伏科技股份有限公司 | A kind of MWT photovoltaic modulies draw welding method |
| JP2017188620A (en) * | 2016-04-08 | 2017-10-12 | 横浜ゴム株式会社 | Solar battery cell with connection part, and solar battery module |
| CN108258073A (en) * | 2016-12-27 | 2018-07-06 | 阿特斯阳光电力集团有限公司 | Photovoltaic welding belt and photovoltaic module |
| CN109802012A (en) * | 2019-01-24 | 2019-05-24 | 常州时创能源科技有限公司 | The preparation method of solar cell module |
| CN110571305A (en) * | 2019-08-26 | 2019-12-13 | 泰州隆基乐叶光伏科技有限公司 | Back contact solar cell module production method and back contact solar cell module |
| CN110690295A (en) * | 2019-08-29 | 2020-01-14 | 泰州隆基乐叶光伏科技有限公司 | Back contact solar cell module production method and back contact solar cell module |
| CN110707170A (en) * | 2019-08-26 | 2020-01-17 | 泰州隆基乐叶光伏科技有限公司 | Back contact solar cell module production method and back contact solar cell module |
| CN113990957A (en) * | 2021-09-28 | 2022-01-28 | 南京日托光伏新能源有限公司 | Integrated composite local conductive core board and application thereof |
| CN114649443A (en) * | 2022-03-03 | 2022-06-21 | 浙江爱旭太阳能科技有限公司 | Back contact solar cell string, preparation method thereof, cell module and photovoltaic system |
| AU2020340008B2 (en) * | 2019-08-26 | 2023-06-08 | Longi Solar Technology (Taizhou) Co., Ltd. | Method for producing back-contact solar cell assembly and back-contact solar cell assembly |
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