TW201741765A - 具有高介電常數之光可成像薄膜 - Google Patents

具有高介電常數之光可成像薄膜 Download PDF

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Publication number
TW201741765A
TW201741765A TW105138147A TW105138147A TW201741765A TW 201741765 A TW201741765 A TW 201741765A TW 105138147 A TW105138147 A TW 105138147A TW 105138147 A TW105138147 A TW 105138147A TW 201741765 A TW201741765 A TW 201741765A
Authority
TW
Taiwan
Prior art keywords
formulation
nanoparticles
group
film
functionalized
Prior art date
Application number
TW105138147A
Other languages
English (en)
Chinese (zh)
Inventor
古普塔 卡洛琳 沃爾夫
袁橋 饒
威廉Ｈ Ｈ 伍德沃德
Original Assignee
陶氏全球科技責任有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 陶氏全球科技責任有限公司 filed Critical 陶氏全球科技責任有限公司
Publication of TW201741765A publication Critical patent/TW201741765A/zh

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials For Photolithography (AREA)
TW105138147A 2015-12-17 2016-11-21 具有高介電常數之光可成像薄膜 TW201741765A (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201562268539P 2015-12-17 2015-12-17

Publications (1)

Publication Number Publication Date
TW201741765A true TW201741765A (zh) 2017-12-01

Family

ID=57708747

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105138147A TW201741765A (zh) 2015-12-17 2016-11-21 具有高介電常數之光可成像薄膜

Country Status (7)

Country Link
US (1) US20180356726A1 (fr)
EP (1) EP3391146A1 (fr)
JP (1) JP2019502151A (fr)
KR (1) KR20180095543A (fr)
CN (1) CN108292095A (fr)
TW (1) TW201741765A (fr)
WO (1) WO2017105937A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201802587A (zh) * 2016-03-24 2018-01-16 陶氏全球科技責任有限公司 具有高介電常數之光可成像薄膜

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2576762B2 (ja) * 1993-06-30 1997-01-29 日本電気株式会社 リング網のノード間情報収集方式
US5641608A (en) * 1995-10-23 1997-06-24 Macdermid, Incorporated Direct imaging process for forming resist pattern on a surface and use thereof in fabricating printing plates
EP1331517B1 (fr) * 2000-10-31 2010-08-18 Sumitomo Bakelite Co., Ltd. Composition de resine photosensible positive, son procede de preparation, et dispositifs a semi-conducteur
US6921623B2 (en) * 2000-12-05 2005-07-26 Kri, Inc. Active components and photosensitive resin composition containing the same
CN1930522B (zh) * 2004-03-12 2013-06-12 东丽株式会社 正型感光性树脂组合物、使用该组合物的浮雕图形以及固体成象元件
WO2007072682A1 (fr) * 2005-12-22 2007-06-28 Fujifilm Corporation Materiau de transfert photosensible, element pour dispositif d'affichage, procede de production de l'element, matrice noire, filtre colore, procede de production du filtre colore, substrat pour dispositif d'affichage, et dispositif d'affichage
JP4818839B2 (ja) 2006-07-19 2011-11-16 株式会社 日立ディスプレイズ 液晶表示装置及びその製造方法
CN102472964B (zh) * 2009-09-29 2013-08-07 东丽株式会社 正型感光性树脂组合物、使用其的固化膜及光学设备
CN103328374B (zh) 2010-10-27 2017-04-26 皮瑟莱根特科技有限责任公司 纳米晶体的合成、盖帽和分散

Also Published As

Publication number Publication date
EP3391146A1 (fr) 2018-10-24
WO2017105937A1 (fr) 2017-06-22
KR20180095543A (ko) 2018-08-27
JP2019502151A (ja) 2019-01-24
US20180356726A1 (en) 2018-12-13
CN108292095A (zh) 2018-07-17

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