TW201740449A - 晶圓之製造方法及晶圓 - Google Patents
晶圓之製造方法及晶圓 Download PDFInfo
- Publication number
- TW201740449A TW201740449A TW105140591A TW105140591A TW201740449A TW 201740449 A TW201740449 A TW 201740449A TW 105140591 A TW105140591 A TW 105140591A TW 105140591 A TW105140591 A TW 105140591A TW 201740449 A TW201740449 A TW 201740449A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- resin layer
- resin
- undulation
- less
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 239000011347 resin Substances 0.000 claims abstract description 116
- 229920005989 resin Polymers 0.000 claims abstract description 116
- 238000000227 grinding Methods 0.000 claims abstract description 60
- 239000013078 crystal Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 10
- 235000012431 wafers Nutrition 0.000 description 90
- 238000005498 polishing Methods 0.000 description 28
- 238000000034 method Methods 0.000 description 13
- 238000003754 machining Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005489 elastic deformation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005389 semiconductor device fabrication Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000009718 spray deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
- 229910052902 vermiculite Inorganic materials 0.000 description 1
- 235000019354 vermiculite Nutrition 0.000 description 1
- 239000010455 vermiculite Substances 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/04—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor involving a rotary work-table
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016019071A JP6500796B2 (ja) | 2016-02-03 | 2016-02-03 | ウェーハの製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201740449A true TW201740449A (zh) | 2017-11-16 |
Family
ID=59500785
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105140591A TW201740449A (zh) | 2016-02-03 | 2016-12-08 | 晶圓之製造方法及晶圓 |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP6500796B2 (fr) |
| CN (1) | CN108885981B (fr) |
| TW (1) | TW201740449A (fr) |
| WO (1) | WO2017134925A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE112018007133T5 (de) * | 2018-02-21 | 2020-11-05 | Sumco Corporation | Waferproduktionsverfahren |
| CN112602173B (zh) * | 2018-08-23 | 2024-06-28 | 东京毅力科创株式会社 | 基板处理系统和基板处理方法 |
| JP7088125B2 (ja) * | 2019-05-14 | 2022-06-21 | 信越半導体株式会社 | 被覆物の厚さ測定方法及び研削方法 |
| KR102283879B1 (ko) | 2021-01-14 | 2021-07-29 | 에스케이씨 주식회사 | 탄화규소 웨이퍼의 제조방법, 탄화규소 웨이퍼 및 웨이퍼 제조용 시스템 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4728023B2 (ja) * | 2005-03-24 | 2011-07-20 | 株式会社ディスコ | ウェハの製造方法 |
| JP5504412B2 (ja) * | 2008-05-09 | 2014-05-28 | 株式会社ディスコ | ウェーハの製造方法及び製造装置、並びに硬化性樹脂組成物 |
| JP5524716B2 (ja) * | 2010-05-28 | 2014-06-18 | 株式会社ディスコ | ウェーハの平坦加工方法 |
| JP5917850B2 (ja) * | 2011-08-01 | 2016-05-18 | 株式会社ディスコ | ウエーハの加工方法 |
| DE112014000276B4 (de) * | 2013-02-19 | 2022-03-31 | Sumco Corporation | Verfahren zum Prozessieren von Halbleiterwafern |
| JP6111893B2 (ja) * | 2013-06-26 | 2017-04-12 | 株式会社Sumco | 半導体ウェーハの加工プロセス |
| JP2015230964A (ja) * | 2014-06-05 | 2015-12-21 | 株式会社ディスコ | ウエーハの加工方法 |
-
2016
- 2016-02-03 JP JP2016019071A patent/JP6500796B2/ja active Active
- 2016-12-07 CN CN201680081011.4A patent/CN108885981B/zh active Active
- 2016-12-07 WO PCT/JP2016/086455 patent/WO2017134925A1/fr active Application Filing
- 2016-12-08 TW TW105140591A patent/TW201740449A/zh unknown
Also Published As
| Publication number | Publication date |
|---|---|
| JP6500796B2 (ja) | 2019-04-17 |
| WO2017134925A1 (fr) | 2017-08-10 |
| JP2017139323A (ja) | 2017-08-10 |
| CN108885981B (zh) | 2023-06-02 |
| CN108885981A (zh) | 2018-11-23 |
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