TW201739971A - 經塗覆線材 - Google Patents

經塗覆線材 Download PDF

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Publication number
TW201739971A
TW201739971A TW105130736A TW105130736A TW201739971A TW 201739971 A TW201739971 A TW 201739971A TW 105130736 A TW105130736 A TW 105130736A TW 105130736 A TW105130736 A TW 105130736A TW 201739971 A TW201739971 A TW 201739971A
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TW
Taiwan
Prior art keywords
weight
wire
range
ppm
silver
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TW105130736A
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English (en)
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TWI642817B (zh
Inventor
康一太
卓容德
曺夢鉉
金鍾洙
丁炫碩
金泰燁
兮 張
穆拉利 薩蘭加帕尼
Original Assignee
賀利氏東方科技股份有限公司
新加坡賀利氏材料私人有限公司
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Publication of TW201739971A publication Critical patent/TW201739971A/zh
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Publication of TWI642817B publication Critical patent/TWI642817B/zh

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/30—Selection of soldering or welding materials proper with the principal constituent melting at less than 1550 degrees C
    • B23K35/3006—Ag as the principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
    • B23K20/002—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating specially adapted for particular articles or work
    • B23K20/004—Wire welding
    • B23K20/005—Capillary welding
    • B23K20/007—Ball bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0222—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in soldering, brazing
    • B23K35/0227—Rods, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/02—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape
    • B23K35/0255—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by mechanical features, e.g. shape for use in welding
    • B23K35/0261—Rods, electrodes, wires
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/40—Making wire or rods for soldering or welding
    • B23K35/404—Coated rods; Coated electrodes
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C22C5/08—Alloys based on silver with copper as the next major constituent
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/002—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working by rapid cooling or quenching; cooling agents used therefor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/02—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working in inert or controlled atmosphere or vacuum
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
    • C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
    • C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C25D5/50—After-treatment of electroplated surfaces by heat-treatment
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Abstract

本發明係關於一種線材，其包含具有表面之線材線芯，該線材線芯具有疊加於其表面上之塗覆層，其中該線材線芯本身由以下組分組成： (a)由(a1)含量在99.99至100重量%範圍內之銀及(a2)總量0至100重量ppm之其他組分組成之純銀 或 (b)由(b1)含量在99.69至99.987重量%範圍內之銀；(b2)總量30至3000重量ppm之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群之摻雜元素及(b3)總量0至100重量ppm之其他組分組成之摻雜銀 或 (c)由(c1)含量在95.99至99.49重量%範圍內之銀；(c2)含量在0.5至4重量%範圍內之鈀及(c3)總量0至100重量ppm之其他組分組成之銀合金 或 (d)由(d1)含量在93.99至99.39重量%範圍內之銀；(d2)含量在0.5至4重量%範圍內之鈀；(d3)含量在0.1至2重量%範圍內之金；及(d4)總量0至100重量ppm之其他組分組成之銀合金 或 (e)由(e1)含量在93.69至99.387重量%範圍內之銀；(e2)含量在0.5至4重量%範圍內之鈀；(e3)含量在0.1至2重量%範圍內之金；(e4)總量30至3000重量ppm之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群之摻雜元素；及(e5)總量0至100重量ppm之其他組分組成之摻雜銀合金， 其中任何其他組分之個別量係小於30重量ppm， 其中任何摻雜元素之個別量係至少30重量ppm， 其中以重量%及重量ppm計之所有量係基於該線芯之總重量，及 其中該塗覆層係金或鈀之1至1000 nm厚之單層或包含鎳或鈀之1至100 nm厚之內層及與其相鄰之金之1至200 nm厚之外層之雙層。

Description

經塗覆線材
本發明係關於一種經塗覆線材，其包含銀或基於銀之線芯及疊加於該線芯之表面上之塗覆層。本發明進一步係關於用於製造此經塗覆線材之方法。
技術現況中熟知焊接線材於電子及微電子應用中之用途。雖然焊接線材一開始係由金製成，但現今使用較廉價之材料，諸如銅、銅合金、銀及銀合金。此等線材可具有金屬塗層。 就線材幾何形狀而言，最常見者係圓形橫剖面之焊接線材及具有大致矩形橫剖面之焊帶。兩種類型之線材幾何形狀均具有使其等可用於特定應用中之優勢。
本發明之目的係提供適用於線材焊接應用之經塗覆銀或銀合金線材，該線材(特定言之)即使係於空氣氛圍下的FAB (無空氣球)形成亦獲得改良，而無需以惰性或還原氣體淨化該FAB，改良處包括FAB柔軟度、黏結性及抗腐蝕性及抗氧化性，並且亦顯示整體而言均衡之性質範圍，該等性質係與線材及其焊接應用相關，包括(例如)寬針腳式焊接(stitch bonding)窗、形成具有優良之再現性、高針腳式脫出拉力、軟線材、低電阻率、低電遷移、長車間壽命(floor life)等之軸對稱FAB。 本文使用術語「軸對稱FAB」。該術語意謂不顯示下列缺陷中之任何一者之經固化之球形FAB： -突出尖端(FAB尖端處熔融金屬之流出)， -蘋果咬口形尖端(FAB尖端處熔融金屬之流入)， -桃形尖端(FAB尖端處具有不同半球之兩個平線區)， -FAB以小於5°，較佳≤ 1°之角度自線材軸傾斜。 本文使用術語「球形FAB」。該術語不應理解為絕對性；反之，其應理解為包括真正球形形狀之FAB以及基本上球形形狀之FAB，即顯示在1:1 (真正球形)至1.1:1 (基本上球形)範圍內之縱橫比(沿FAB徑向軸之最長及最短對角線(或直徑)之商數)之FAB。 該目的之解決方案係藉由獨立請求項之標的提供。獨立請求項之附屬請求項呈現本發明之較佳實施例，其標的亦有助於解決上文提及之目的。
在第一態樣中，本發明係關於一種包含具有表面之線材線芯(下文中亦簡稱為「線芯」)之線材，該線材線芯具有疊加於其表面上之塗覆層，其中該線材線芯本身由以下組分組成： (a)由(a1)含量在99.99至100重量%範圍內之銀(重量-%，重量%)及(a2)總量0至100重量ppm (重量-ppm，重量ppm)之其他組分(除銀外之組分)組成之純銀 或 (b)由(b1)含量在99.69至99.987重量%(較佳99.93至99.987重量%)範圍內之銀；(b2)總量30至3000重量ppm(較佳30至600重量ppm)之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群(較佳由鈣及鎳組成之群)之摻雜元素；及(b3)總量0至100重量ppm之其他組分(除銀、鈣、鎳、鉑、銅、銠及釕外之組分)組成之摻雜銀 或 (c)由(c1)含量在95.99至99.49重量%(較佳97.49至99.09重量%)範圍內之銀；(c2)含量在0.5至4重量%(較佳0.9至2.5重量%)範圍內之鈀；及(c3)總量0至100重量ppm之其他組分(除銀及鈀外之組分)組成之銀合金 或 (d)由(d1)含量在93.99至99.39重量%(較佳95.39至96.59重量%)範圍內之銀；(d2)含量在0.5至4重量%(較佳2.7至3.3重量%)範圍內之鈀；(d3)含量在0.1至2重量%(較佳0.7至1.3重量%)範圍內之金；及(d4)總量0至100重量ppm之其他組分(除銀、鈀及金外之組分)組成之銀合金 或 (e)由(e1)含量在93.69至99.387重量%(較佳95.33至96.587重量%)範圍內之銀；(e2)含量在0.5至4重量%(較佳2.7至3.3重量%)範圍內之鈀；(e3)含量在0.1至2重量%(較佳0.7至1.3重量%)範圍內之金；(e4)總量30至3000重量ppm(較佳30至600重量ppm)之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群(較佳由鉑、鈣及鎳組成之群)之摻雜元素；及(e5)總量0至100重量ppm之其他組分(除銀、鈀、金、鈣、鎳、鉑、銅、銠及釕外之組分)組成之摻雜銀合金， 其中任何其他組分之個別量係小於30重量ppm， 其中任何摻雜元素之個別量係至少30重量ppm， 其中以重量%及重量ppm計之所有量係基於該線芯之總重量，及 其中該塗覆層係金或鈀之1至1000 nm(較佳10至460 nm)厚之單層或包含鎳或鈀之1至100 nm(較佳1至20 nm)厚之內層及與其相鄰之金之1至200 nm(較佳1至40 nm)厚之外層(頂層)之雙層。 本發明之線材較佳係用於在微電子學中焊接之焊接線材。其較佳係一件式物體。已知許多形狀且其等顯得適用於本發明之線材。較佳之形狀係橫剖面圖呈圓形、橢球體及矩形形狀。就本發明而言，儘管具有圓形橫剖面及細直徑之焊接線材為較佳，但術語「焊接線材」包含所有形狀之橫剖面及所有常見之線材直徑。平均橫剖面係在(例如)50至5024 µm2 或較佳110至2400 µm2 之範圍內；因此在較佳圓形橫剖面之情況下，該平均直徑係在(例如)8至80 µm或較佳12至55 µm之範圍內。 線材或線材線芯之平均直徑或(簡言之)直徑可藉由「確定尺寸方法」獲得。根據此方法，測定一定長度之線材之物理重量。基於此重量，使用線材材料之密度計算線材或線材線芯之直徑。該直徑係計算為於特定線材之五次切割上之五次量測值之算術平均值。 與上文提及之內容一致，在上文揭示之組合物之各情況下，線材線芯係由以下組分組成：(a)純銀；(b)摻雜銀；(c)及(d)銀合金或(e)摻雜銀合金。本發明之線材之線芯可包含總量在0至100重量ppm(例如，10至100重量ppm)範圍內之所謂之其他組分。在本文中，該等其他組分(通常亦稱為「不可避免之雜質」)係源自在所使用原材料中存在之雜質或來自線材製造方法之少量化學元素及/或化合物。其他組分0至100重量ppm之低總量確保線材性質之優良再現性。存在於線芯中之其他組分通常並非另外添加。各個別其他組分之含量係基於線材線芯之總重量小於30重量ppm。 線材之線芯係塊狀材料之均勻區域。由於任何塊狀材料始終具有可在某種程度上顯示不同性質之表面區域，因此將該線材之線芯之性質理解為塊狀材料之均勻區域之性質。塊狀材料區域之表面可在形態、組成(例如，硫、氯及/或氧含量)及其他特徵方面不同。該表面係在線材線芯與疊加於該線材線芯上之塗覆層間之界面區域。通常，該塗覆層係完全疊加於該線材線芯之表面上。在線材之線芯與疊加於其上之塗覆層間之線材區域中，可存在兩者(線芯及塗覆層)之材料之組合。 疊加於線材之表面上之塗覆層係金或鈀之1至1000 nm，較佳10至460 nm及更佳10至200 nm厚之單層或包含鎳或鈀之1至100 nm，較佳1至20 nm厚之內層及與其相鄰之金之1至200 nm，較佳1至40 nm厚之外層之雙層。在本文中，術語「厚」或「塗覆層厚度」意謂塗覆層在該線芯之縱向軸之垂直方向上之尺寸。 就金或鈀之單層之組成而言，基於塗覆層之總重量，其金或鈀含量係(例如)至少50重量%，較佳至少95重量%。特別較佳地，該塗覆層係由純金或鈀組成。基於該塗覆層之總重量，純金或鈀通常具有小於1重量%之其他組分(除金或鈀外之組分)。 就該雙層之組成而言，基於內塗覆層之總重量，其內層之鎳或鈀含量係(例如)至少50重量%，較佳至少95重量%。特別較佳地，該內塗覆層係由純鎳或鈀組成。基於該內塗覆層之總重量，純鎳或鈀通常具有小於1重量%之其他組分(除鎳或鈀外之組分)。基於外塗覆層之總重量，相鄰外金層之金含量係(例如)至少50重量%，較佳至少95重量%。特別較佳地，該外塗覆層係由純金組成。基於該外塗覆層之總重量，純金通常具有小於1重量%之其他組分(除金外之組分)。 在一實施例中，本發明之線材之線芯特徵至少在於下列固有性質(1)至(6)中之一者(參見如下文描述之「測試方法A」)： (1)平均線材晶粒大小(平均晶粒大小)係不大於10 µm，例如在2至10 µm之範圍內，較佳在2至5 µm之範圍內， (2)線材晶粒[100]或[101]或[111]取向平面係不大於15%，例如在2至15%範圍內，較佳在2至7%範圍內， (3)線材雙晶界分率係不大於70%，例如在50至70%範圍內，較佳在50至60%範圍內， (4)FAB平均晶粒大小係不大於30 µm，例如在8至30 µm範圍內，較佳在8至16 µm範圍內， (5)FAB晶粒[111]取向平面係不大於30%，例如在10至30%範圍內，較佳在10至20%範圍內， (6)FAB雙晶界分率係不大於50%，例如在40至50%範圍內。 在一實施例中，本發明之線材特徵至少在於下列非固有性質(α)至(θ)中之一者： (α)耐銹蝕性具有不大於5%焊球脫落(bonded ball lift)之值，例如在0至5%之範圍內(參見如下文描述之「測試方法B」)， (β)耐濕性具有不大於5%焊球脫落之值，例如在0至5%之範圍內(參見如下文描述之「測試方法C」)， (γ)該線材之電阻率係小於4.0 µΩ∙cm，例如在1.6至4.0 µΩ∙cm之範圍內，較佳在1.63至3.4 µΩ∙cm之範圍內(參見如下文描述之「測試方法D」)， (δ)該線材之銀枝蔓狀生長係不大於12 µm/s，例如在0至12 µm/s之範圍內，較佳在0至4 µm/s之範圍內(參見如下文描述之「測試方法E」)， (ε)線材線芯之硬度係不大於80 HV (10mN/12s)，例如在50至80 HV之範圍內，較佳在50至70 HV之範圍內(參見如下文描述之「測試方法F」)， (ζ)針腳式焊接之過程窗範圍針對針腳式焊接至金手指(gold finger)之直徑為17.5 µm之線材具有至少36100 mA·g，例如36100至38000 mA·g之值(參見如下文描述之「測試方法G」)， (η)球形焊接之過程窗範圍針對球形焊接至Al-0.5重量%Cu焊墊之直徑為17.5 µm之線材具有至少960 mA·g，例如960至1000 mA·g之值(參見如下文描述之「測試方法H」)， (θ)該線材之屈服強度係不大於170 MPa，例如在140至170 MPa之範圍內(參見如下文描述之「測試方法J」)。 術語「固有性質」及「非固有性質」在本文中係針對線材線芯或FAB使用。固有性質意謂線材線芯或FAB本身具有之性質(獨立於其他因素)，而非固有性質係取決於線材線芯或FAB與其他因素(諸如所採用之量測方法及/或量測條件)之關係。 本發明之經塗覆線材具有意料之外之優勢，其即使係在空氣氛圍下亦容許形成軸對稱FAB；即，在FAB形成過程期間無需以惰性或還原氣體淨化。 在另一態樣中，本發明亦係關於一種製造上文揭示之任一實施例中之本發明之經塗覆線材之方法。該方法包括至少步驟(1)至(5)： (1)提供由以下組分組成之前驅物品： (a)由(a1)含量在99.99至100重量%範圍內之銀及(a2)總量0至100重量ppm之其他組分(除銀外之組分)組成之純銀 或 (b)由(b1)含量在99.69至99.987重量%(較佳99.93至99.987重量%)範圍內之銀；(b2)總量30至3000重量ppm(較佳30至600重量ppm)之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群(較佳由鈣及鎳組成之群)之摻雜元素；及(b3)總量0至100重量ppm之其他組分(除銀、鈣、鎳、鉑、銅、銠及釕外之組分)組成之摻雜銀 或 (c)由(c1)含量在95.99至99.49重量%(較佳97.49至99.09重量%)範圍內之銀；(c2)含量在0.5至4重量%(較佳0.9至2.5重量%)範圍內之鈀；及(c3)總量0至100重量ppm之其他組分(除銀及鈀外之組分)組成之銀合金 或 (d)由(d1)含量在93.99至99.39重量%(較佳95.39至96.59重量%)範圍內之銀；(d2)含量在0.5至4重量%(較佳2.7至3.3重量%)範圍內之鈀；(d3)含量在0.1至2重量%(較佳0.7至1.3重量%)範圍內之金；及(d4)總量0至100重量ppm之其他組分(除銀、鈀及金外之組分)組成之銀合金 或 (e)由(e1)含量在93.69至99.387重量%(較佳95.33至96.587重量%)範圍內之銀；(e2)含量在0.5至4重量%(較佳2.7至3.3重量%)範圍內之鈀；(e3)含量在0.1至2重量%(較佳0.7至1.3重量%)範圍內之金；(e4)總量30至3000重量ppm(較佳30至600重量ppm)之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群(較佳由鉑、鈣及鎳組成之群)之摻雜元素；及(e5)總量0至100重量ppm之其他組分(除銀、鈀、金、鈣、鎳、鉑、銅、銠及釕外之組分)組成之摻雜銀合金， 其中任何其他組分之個別量係小於30重量ppm， 其中任何摻雜元素之個別量係至少30重量ppm， 其中以重量%及重量ppm計之所有量係基於該前驅物品之總重量， (2)延伸該前驅物品以形成經延伸之前驅物品，直至獲得在7850至31400 µm2 範圍內之中間橫剖面或在100至200 µm(較佳130至140 µm)範圍內之中間直徑， (3)將金或鈀之單層塗層或由鎳或鈀之內層(基礎層)及與其相鄰之金之外層(頂層)組成之雙層塗層沈積於在完成方法步驟(2)後獲得之經延伸之前驅物品之表面上， (4)進一步延伸在完成方法步驟(3)後獲得之經塗覆前驅物品，直至獲得所需之最終橫剖面或直徑，及 (5)最終在200至600℃範圍內之烘箱設定溫度下分股退火(strand annealing)在完成方法步驟(4)後獲得之經塗覆前驅物歷時在0.4至0.8秒範圍內之曝露時間，以形成經塗覆線材， 其中步驟(2)包括一或多個在400至800℃之烘箱設定溫度下中間分批退火該前驅物品歷時在50至150分鐘範圍內之曝露時間之子步驟。 本文使用術語「分股退火」。其係容許快速產生具有高再現性之線材之連續過程。在本發明之內文中，分股退火意謂退火係動態地完成，同時待退火之經塗覆前驅物經拉動或移動通過習知之退火烘箱及在已離開退火烘箱後捲繞於捲軸上。此處，該退火烘箱係通常呈給定長度之圓柱形管之形式。憑藉其在可於(例如)10至60米/分鐘範圍內選擇之給定退火速度下之一定溫度分佈，可界定及設定退火時間/烘箱溫度參數。 本文使用術語「烘箱設定溫度」。其意謂於退火烘箱之溫度控制器中固定之溫度。該退火烘箱可係室爐型烘箱(在分批退火之情況下)或管狀退火烘箱(在分股退火之情況下)。 本發明在前驅物品、經延伸之前驅物品、經塗覆前驅物品、經塗覆前驅物及經塗覆線材之間加以區分。術語「前驅物品」係用於彼等線材預先階段者，其尚未達到線材線芯之期望最終橫剖面或最終直徑，而術語「前驅物」係用於在期望最終橫剖面或期望最終直徑時之線材預先階段。在完成方法步驟(5)後，即在期望最終橫剖面或期望最終直徑時經塗覆前驅物之最終分股退火後，獲得本發明意義上之經塗覆線材。 在第一替代選項中，如提供於方法步驟(1)中之前驅物品係由(a)前文所揭示組成之純銀組成。通常，此前驅物品係呈具有(例如)2至25 mm之直徑及(例如)2至100 m之長度之棒形式。此銀棒可藉由使用適當之鑄模連續鑄銀，接著冷卻及固化而製成。 在第二至第四替代選項中，在上文所揭示組成之各情況下，如方法步驟(1)中提供之前驅物品係由(b)摻雜銀或(c)銀合金或(d)銀合金或(e)摻雜銀合金組成。此等前驅物品可藉由合金化、摻雜或合金化及摻雜銀與所需量之組分(b2)或(c2)或(d2)及(d3)或(e2)、(e3)及(e4)來獲得。該摻雜銀或銀合金或摻雜銀合金可藉由熟習金屬合金技術者已知的習知方法製成，例如，藉由以所需之比例比率將該等組分熔融在一起。在進行此工作時，可利用一或多種習知之主合金。熔融過程可(例如)利用感應爐進行及適宜地在真空下或在惰性氣體氛圍下作業。使用之材料可具有(例如)99.99重量%及以上之純度等級。如此產生之熔融物可經冷卻以形成基於銀之前驅物品之均勻件。通常，此前驅物品係呈具有(例如)2至25 mm之直徑及(例如)2至100 m之長度之棒形式。此棒可藉由使用適當之鑄模連續鑄造該摻雜銀或(摻雜)銀合金熔融物，接著冷卻及固化而製成。 在方法步驟(2)中，延伸前驅物品以形成經延伸之前驅物品，直至獲得在7850至31400 µm2 範圍內之中間橫剖面或在100至200 µm(較佳130至140 µm)範圍內之中間直徑。已知延伸前驅物品之技術且該等技術在本發明文中顯得有用。較佳技術係輥製、鍛製、模拉製或其類似者，其中模拉製係特佳。在後者情況下，在數個方法步驟中拉製該前驅物品直至達成期望中間橫剖面或期望中間直徑。熟習此項技術者熟知此線材模拉製方法。可採用習知的碳化鎢及金剛石拉製模及可採用習知的拉製潤滑劑來支援拉製。 本發明方法之步驟(2)包括在於400至800℃範圍內之烘箱設定溫度下中間分批退火經延伸之前驅物品歷時在50至150分鐘範圍內之曝露時間之一或多個子步驟。該中間分批退火可(例如)使用經拉製至2 mm直徑且盤繞於圓桶上之棒進行。 在方法步驟(3)中，將金或鈀之單層塗層或包含鎳或鈀之內層及與其相鄰之金之外層之雙層塗層沈積於在完成方法步驟(2)後獲得之經延伸之前驅物品之表面上，以於該表面上疊加塗層。 熟習此項技術者已知如何計算經延伸之前驅物品上之此塗層之厚度，以最終(即在最終延伸該經塗覆前驅物品後)獲得針對線材之實施例所揭示之層厚度之塗層。熟習此項技術者已知於銀或銀合金表面上形成根據實施例之材料之塗覆層之許多技術。較佳技術係電鍍(諸如有電電鍍及無電電鍍)、自氣相沈積材料(諸如濺鍍、離子鍍、真空蒸鍍及物理氣相沈積)及自熔融物沈積材料。在本發明文中，有電電鍍係較佳技術。 在方法步驟(4)中，使在完成方法步驟(3)後獲得之經塗覆前驅物品進一步延伸，直至獲得期望最終橫剖面或直徑之線材。延伸該經塗覆前驅物品之技術係與彼等上文於方法步驟(2)之揭示內容中提及者相同之延伸技術。 在方法步驟(5)中，使在完成方法步驟(4)後獲得之經塗覆前驅物最終在200至600℃(較佳200至400℃)範圍內之烘箱設定溫度下分股退火在0.4至0.8秒範圍內之曝露時間，以形成經塗覆線材。 在一較佳實施例中，使經最終分股退火之經塗覆前驅物(即，仍熱之經塗覆線材)於水中淬火，在一實施例中，該水可含有一或多種添加劑，例如，0.01至0.07體積%之添加劑。於水中淬火意謂使經最終分股退火之經塗覆前驅物自其於方法步驟(5)中經歷之溫度立即或迅速(即，於0.2至0.6秒內)冷卻至室溫，例如，藉由浸漬或滴液。 方法步驟(2)之中間分批退火可在惰性或還原氛圍下進行。此項技術中已知許多類型之惰性氛圍及還原氛圍及其等係用於淨化退火烘箱。在已知的惰性氛圍中，氮或氬係較佳。在已知的還原氛圍中，氫係較佳。另一較佳還原氛圍係氫及氮之混合物。氫及氮之較佳混合物係90至98體積%氮，及因此，2至10體積%氫，其中體積%之總和為100體積%。氮/氫之較佳混合物係等於93/7、95/5及97/3體積%/體積%，各基於該混合物之總體積計。 據信前驅物品材料之組成(其係與線材線芯之組成相同)與在方法步驟(2)及(5)期間主要之退火參數之獨特組合對獲得顯示上文揭示之固有及/或非固有性質中之至少一者之本發明之線材係至關重要的。中間分批及最終分股退火步驟之溫度/時間條件容許達成或調節該線材或線材線芯之固有及非固有性質。 在完成方法步驟(5)及視需要之淬火後，完成本發明之經塗覆線材。為充分受益自其性質，宜將其立即用於線材焊接應用中，即，無延遲地，例如，在完成方法步驟(5)後之不超過28天內。或者，為保持該線材之寬線材焊接過程窗性質及為防止其受氧化或其他化學腐蝕，通常在完成方法步驟(5)後立即將完成之線材盤捲及真空密封，即，無延遲地，例如，於完成方法步驟(5)後之＜1至5小時內，及然後儲存以進一步用作焊接線材。在真空密封條件下之儲存應不超過12個月。在打開真空密封後，該線材應於不超過28天內用於線材焊接。 所有方法步驟(1)至(5)及盤捲及真空密封較佳係在無塵室條件下進行(US FED STD 209E無塵室標準，1k標準)。 本發明之第三態樣係可藉由上文揭示之方法根據其任何實施例獲得之經塗覆線材。已發現本發明之經塗覆線材極適用作線材焊接應用中之焊接線材。熟習此項技術者熟知線材焊接技術。在線材焊接之過程中，通常形成球形焊接(第1次焊接)及針腳式焊接(第2次焊接，楔形焊接)。在焊接成形期間，施加一特定力(通常以公克量測)，並藉由施加超音波能量(通常以mA量測)支援。在線材焊接過程中施加力之上限值與下限值間之差值與所施加超音波能量之上限值與下限值間之差值之數學乘積界定線材焊接過程窗： (施加力之上限值-施加力之下限值)·(所施加超音波能量之上限值-所施加超音波能量之下限值)=線材焊接過程窗。 線材焊接過程窗界定容許形成滿足規格(即，其通過諸如(僅列舉數項)習知拉力測試、球剪切測試及球拉力測試之習知測試)之線材焊接之力/超音波能量組合之範圍。 換言之，第1次焊接(球形焊接)過程窗範圍係焊接中使用之力之上限值與下限值間之差值與所施加超音波能量之上限值與下限值間之差值之乘積，其中所得之焊接必須滿足某些球剪切測試規格，例如，0.0085公克/µm2 之球剪切、焊墊上無不黏性等，而第2次焊接(針腳式焊接)過程窗範圍係焊接中使用之力之上限值與下限值間之差值與所施加超音波能量之上限值與下限值間之差值之乘積，其中所得之焊接必須滿足某些拉力測試規格，例如，2公克之拉力，於鉛上無不黏性等。 就工業應用而言，出於線材焊接過程穩健性之原因，需要具有寬的線材焊接過程窗(以g計之力相對於以mA計之超音波能量)。本發明之線材顯示相當寬之線材焊接過程窗。 下列非限制性實例闡述本發明。此等實例用於本發明之例示性闡釋且不意欲以任何方式限制本發明之範疇或申請專利範圍。實例 FAB之製造： 其係根據描述於KNS Process User Guide for FAB (Kulicke & Soffa Industries Inc, Fort Washington, PA, USA, 2002, 31 May 2009)中之程序進行。FAB係藉由利用標準燒製(單一步驟，17.5 µm線材，50 mA之EFO電流，EFO時間125 µs)進行習知的電火炬(electric flame-off)(EFO)燒製而製得。測試方法 A. 至 J. 所有測試及量測係在T = 20℃及相對濕度RH = 50%下進行。 A.電子背散射繞射(EBSD)圖案分析： 經採用以量測線材紋理之主要步驟係樣品製備、獲得優良之Kikuchi圖案及組分計算： 首先使用環氧樹脂封裝線材及根據標準金相技術拋光。在最終樣品製備步驟中應用離子研磨以移除線材表面之任何機械變形、污染物及氧化層。使經離子研磨之橫剖面樣品表面經金濺鍍。然後再多進行兩輪離子研磨及金濺鍍。未進行化學蝕刻或離子蝕刻。 將樣品裝載於具有與固持正常FESEM樣品之桌表面成70°角之支持物之FESEM (場發射掃描電子顯微鏡)中。該FESEM進一步配備有EBSD偵測器。獲得含有線材結晶資訊之電子背散射圖案(EBSP)。 進一步分析此等圖案之晶粒取向分率、平均晶粒大小等(使用由Bruker發展之稱為QUANTAX EBSD程式之軟體)。將類似取向之點分組在一起以形成紋理組分。 為區分不同之紋理組分，使用15°之最大公差角。將線材拉製方向設定為參考取向。[100]、[101]及[111]紋理百分率係藉由量測具有平行於參考取向之[100]、[101]及[111]取向平面之晶體之百分率來計算。 分析平均晶粒大小，從而界定相鄰網格點間大於最小值(本文中10°)之結晶取向，以確定晶界之位置。EBSD軟體計算各晶粒之面積及將其轉換為等效圓直徑，將其定義為「平均晶粒大小」。計數於~100 µm之長度內沿線材縱向方向之所有晶粒以確定平均晶粒大小之平均值及標準偏差。 雙晶界(亦稱為Σ3 CSL雙晶界)不包括於平均晶粒大小計算中。該雙晶界係藉由在相鄰結晶域之間圍繞＜111＞取向平面旋轉60°進行描述。點之數量取決於步距(step size)，其小於平均晶粒大小之1/5。 B.焊球之鹽溶液浸漬測試： 將線材球形焊接至Al-0.5重量%Cu焊墊。將具有經如此焊接之線材之測試裝置在25℃下於鹽溶液中浸漬10分鐘，用去離子(DI)水及隨後用丙酮清洗。該鹽溶液含有於DI水中之20重量ppm NaCl。在低倍顯微鏡(Nikon MM-40)下在100X放大率下檢查脫落球之數量。觀察到較高數量之脫落球指示嚴重之界面電流腐蝕。 C.焊球之耐濕性測試： 將線材球形焊接至Al-0.5重量%Cu焊墊。將具有經如此焊接之線材之測試裝置在高加速應力測試(HAST)室中在130℃溫度、85%相對濕度(RH)下儲存8小時及隨後在低倍顯微鏡(Nikon MM-40)下在100X放大率下檢查脫落球之數量。觀察到較高數量之脫落球指示嚴重之界面電流腐蝕。 D.電阻率： 將測試試樣(即，長度1.0米之線材)之兩端連接至提供恆定電流/電壓之電源。使用裝置針對供應電壓記錄電阻。量測裝置係HIOKI型號3280-10，及利用至少10個測試試樣重複該測試。將量測值之算術平均值用於以下給定之計算。 電阻R係根據R = V / I計算。 比電阻率ρ係根據ρ = (R x A) / L計算，其中A係線材之平均橫剖面面積及L係線材在用於量測電壓之裝置之兩個量測點間之長度。 比電導率σ係根據σ = 1 / ρ計算。 E.線材之電遷移測試： 使直徑75 µm之兩線材在低倍顯微鏡Nikon MM40型號之物鏡下在50X放大率下於PTFE板上在1毫米距離內保持平行。在待電連接之兩線材之間藉由微量吸管形成水滴。將一線材連接至正極及將另一線材連接至負極及向該等線材施加5 V。使該兩線材在與10 kW電阻器串聯連接之閉合電路中用5 V直流電流偏壓。該電路係藉由用幾滴去離子水作為電解質潤濕該兩線材而閉合。銀於電解質中自陰極電遷移至陽極從而形成銀枝蔓，有時橋接兩線材。銀枝蔓狀生長速率主要取決於該線材之塗覆層，及在銀合金線材線芯之情況下取決於合金化添加。 F.維氏(Vickers)微硬度： 使用具有維氏壓頭之Mitutoyo HM-200測試設備來量測硬度。將10 mN壓痕負載之力施加至線材之測試試樣，歷時12秒之留置時間。該測試係在線材或FAB之中心上進行。 G.針腳式焊接過程窗範圍： 藉由標準程序進行針腳式焊接過程窗範圍之量測。測試線材係使用KNS-iConn焊接工具(Kulicke & Soffa Industries Inc., Fort Washington, PA, USA)進行針腳式焊接。該等過程窗值係基於具有17.5 µm之平均直徑之線材，其中焊接該線材之導腳係由金組成。 過程窗之四個角落係藉由克服兩個主要故障模式獲得： (1)供應過低力及超音波能量導致該線材之導腳上之不黏性(NSOL)，及 (2)供應過高力及超音波能量導致短線材尾(SHTL)。 H.球形焊接過程窗範圍： 藉由標準程序進行球形焊接過程窗範圍之量測。測試線材係使用KNS-iConn焊接工具(Kulicke & Soffa Industries Inc., Fort Washington, PA, USA)進行球形焊接。該等過程窗值係基於具有17.5 µm之平均直徑之線材，其中該線材所焊接之焊墊係由Al-0.5重量%Cu組成。 過程窗之四個角落係藉由克服兩個主要故障模式獲得： (1)供應過低力及超音波能量導致該線材之墊上之不黏性(NSOP)，及 (2)供應過高力及超音波能量導致短線材尾(SHTL)。 J.延伸率(EL)： 使用Instron-5564儀器測試線材之抗拉性質。在2.54 cm/min速度下，針對254 mm標距(L)測試該等線材。根據ASTM標準F219-96獲得破裂(斷裂)時之負載及延伸率。該延伸率係在抗拉測試之開始與結束間之線材之標距的差值(△L)，其通常作為(100∙△L/L)以百分率記錄，自經記錄之負載相對於延長拉力圖計算得。該抗拉強度及屈服強度係由斷裂及屈服負載除以線材面積計算得。該線材之實際直徑係藉由確定尺寸方法，稱重標準長度之線材及使用其密度進行量測。實例 1 ：線材樣品 1 至 8 在各情況下將一定量之銀(Ag)、鈀(Pd)及至少99.99%純度(「4N」)之金(Au)熔融於坩堝中。將少量之銀-鎳、銀-鈣、銀-鉑或銀-銅主合金添加至熔融物中及藉由攪拌確定添加組分之均勻分佈。使用下列主合金： 就表1之合金而言，添加主合金之對應組合。 然後自熔融物連續鑄造呈8 mm棒形式之線材線芯前驅物品。然後在數個拉製步驟中拉製該等棒以形成具有直徑為134 µm之圓形橫剖面之線材線芯前驅物。在500℃之烘箱設定溫度下中間分批退火該線材線芯前驅物歷時60分鐘之曝露時間，然後有電電鍍775 nm厚之由至少99%純度之金組成之塗覆層，及此後進一步拉製至17.5 µm之最終直徑及103 nm之最終金塗覆層厚度，接著在220℃之烘箱設定溫度下最終分股退火0.6秒之曝露時間，接著於含有0.07體積%表面活性劑之水中立即淬火如此獲得之經塗覆線材。 藉助於此程序，製得經金塗覆銀及基於銀之線材之數個不同之樣品1至8及4N純度之未經塗覆之參考銀線材(參考)。表1顯示該等線材之組成。 量測線材樣品1至8之晶粒大小及記錄平均晶粒大小。在各情況下，結果係在2至5 µm之範圍內。就樣品1而言，平均晶粒大小係3.12 µm。 下表2顯示某些測試結果。所有測試係使用17.5 µm直徑之線材進行，電遷移測試除外，該測試係使用75 µm直徑之線材進行(評估：++++絕佳； +++優良；++符合要求；+差)。 「經形成氣體淨化」意謂FAB在其形成期間經95/5體積%/體積%氮/氫淨化，而「在大氣下」意謂FAB形成係在空氣氛圍下進行。 圖2中顯示典型之經離子研磨之橫剖面影像，其揭示線材中之晶粒形態、HAZ (受熱影響區域)及FAB位置。表3顯示線材樣品1之平均晶粒大小及紋理組分 (線材、FAB及HAZ)。 實例 2 ：線材樣品 9 至 12 其係使用下列主合金類似於實例1進行處理： 施加由鈀組成之153 nm厚之塗覆層(20 nm之最終鈀層厚度)來替代有電電鍍金。表4顯示線材樣品9至12之組成。 下表5顯示某些測試結果。所有測試係使用17.5 µm直徑之線材進行，電遷移測試除外，該測試係使用75 µm直徑之線材進行。 實例 3 ：線材樣品 13 至 17 其係使用下列主合金類似於實例1進行處理： 施加由內鈀(或鎳)層及外金層組成之雙層塗層(最終鈀或鎳層厚度= 2.6 nm，最終金層厚度= 13 nm)來替代有電電鍍金之單層。表6顯示線材樣品13至17之組成。 下表7顯示某些測試結果。所有測試係使用17.5 µm直徑之線材進行，電遷移測試除外，該測試係使用75 µm直徑之線材進行。
圖1顯示直徑17.5 µm之經103 nm金塗覆之4N銀線芯線材(對應於表1之樣品1之組成)之例示性退火曲線。退火溫度係x軸之可變參數。該圖顯示該線材之斷裂負載(BL，以公克計)及延伸率(EL，以%計)之量測值。該延伸率係藉由抗拉測試測定。延伸率量測值於顯示實例中顯示約16.5%之典型局部最大值，其係於約400℃之退火溫度下達成。根據樣品1之線材在此最大延伸率之溫度下未經退火，但在220℃下經退火，220℃係比根據圖1之最大延伸率之溫度低180℃。此導致約8%之延伸率值，其比最大延伸率值低超過35%。 圖2顯示直徑17.5 µm之經100 nm金塗覆之4N銀線芯線材(表1之樣品1)之例示性經離子研磨之橫剖面影像。三種不同位置(線材、、受熱影響區域(HAZ)及FAB)之晶粒形態係明顯的。該FAB係使用櫻桃核模式形成。球相對於線材尺寸之比率(BSR)係1.8。

Claims (15)

  1. 一種線材，其包含具有表面之線材線芯，該線材線芯具有疊加於其表面上之塗覆層，其中該線材線芯本身由以下組分組成： (a)由(a1)含量在99.99至100重量%範圍內之銀及(a2)總量0至100重量ppm之其他組分組成之純銀 或 (b)由(b1)含量在99.69至99.987重量%範圍內之銀；(b2)總量30至3000重量ppm之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群之摻雜元素及(b3)總量0至100重量ppm之其他組分組成之摻雜銀 或 (c)由(c1)含量在95.99至99.49重量%範圍內之銀；(c2)含量在0.5至4重量%範圍內之鈀及(c3)總量0至100重量ppm之其他組分組成之銀合金 或 (d)由(d1)含量在93.99至99.39重量%範圍內之銀；(d2)含量在0.5至4重量%範圍內之鈀；(d3)含量在0.1至2重量%範圍內之金；及(d4)總量0至100重量ppm之其他組分組成之銀合金 或 (e)由(e1)含量在93.69至99.387重量%範圍內之銀；(e2)含量在0.5至4重量%範圍內之鈀；(e3)含量在0.1至2重量%範圍內之金；(e4)總量30至3000重量ppm之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群之摻雜元素；及(e5)總量0至100重量ppm之其他組分組成之摻雜銀合金， 其中任何其他組分之個別量係小於30重量ppm， 其中任何摻雜元素之個別量係至少30重量ppm， 其中以重量%及重量ppm計之所有量係基於該線芯之總重量，及 其中該塗覆層係1至1000 nm厚之金或鈀之單層或包含鎳或鈀之1至100 nm厚之內層及與其相鄰之金之1至200 nm厚之外層的雙層。
  2. 如請求項1之線材，其中該至少一種摻雜元素(b2)及該至少一種摻雜元素(e4)係選自由鉑、鈣及鎳組成之群。
  3. 如請求項1之線材，其具有在50至5024 µm2 範圍內之平均橫剖面。
  4. 如請求項1之線材，其具有平均直徑在8至80 µm範圍內之圓形橫剖面。
  5. 如請求項1之線材，其中該塗覆層係金或鈀之10至460 nm厚之單層或包含鎳或鈀之1至20 nm厚之內層及與其相鄰之金之1至40 nm厚之外層的雙層。
  6. 如請求項1之線材，其中該線材線芯之特徵至少在於下列固有性質(1)至(6)中之一者： (1)平均線材晶粒大小不大於10 µm， (2)線材晶粒之[100]或[101]或[111]取向平面不超過15%， (3)線材雙晶界分率不大於70%， (4)FAB平均晶粒大小不大於30 µm， (5)FAB晶粒之[111]取向平面不超過30%， (6)FAB雙晶界分率不大於50%。
  7. 如請求項1之線材，其特徵至少在於下列非固有性質(α)至(θ)中之一者： (α)耐銹蝕性具有不大於5%焊球脫落(bonded ball lift)之值， (β)耐濕性具有不大於5%焊球脫落之值， (γ)該線材之電阻率小於4.0 µΩ∙cm， (δ)該線材之銀枝蔓狀生長不大於12 µm/s， (ε)該線材線芯之硬度不大於80 HV (10mN/12s)， (ζ)針腳式焊接(stitch bonding)之過程窗範圍針對針腳式焊接至金手指(gold finger)之直徑17.5 µm之線材具有至少36100 mA·g之值， (η)球形焊接之過程窗範圍針對球形焊接至Al-0.5重量%Cu焊墊之直徑17.5 µm之線材具有至少960 mA·g之值， (θ)該線材之屈服強度不大於170 MPa。
  8. 一種用於製造如前述請求項中任一項之經塗覆線材之方法，其中該方法至少包括步驟(1)至(5)： (1)提供由以下組分組成之前驅物品： (a)由(a1)含量在99.99至100重量%範圍內之銀及(a2)總量0至100重量ppm之其他組分組成之純銀 或 (b)由(b1)含量在99.69至99.987重量%範圍內之銀；(b2)總量30至3000重量ppm之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群之摻雜元素；及(b3)總量0至100重量ppm之其他組分組成之摻雜銀 或 (c)由(c1)含量在95.99至99.49重量%範圍內之銀；(c2)含量在0.5至4重量%範圍內之鈀；及(c3)總量0至100重量ppm之其他組分組成之銀合金 或 (d)由(d1)含量在93.99至99.39重量%範圍內之銀；(d2)含量在0.5至4重量%範圍內之鈀；(d3)含量在0.1至2重量%範圍內之金；及(d4)總量0至100重量ppm之其他組分組成之銀合金 或 (e)由(e1)含量在93.69至99.387重量%範圍內之銀；(e2)含量在0.5至4重量%範圍內之鈀；(e3)含量在0.1至2重量%範圍內之金；(e4)總量30至3000重量ppm之至少一種選自由鈣、鎳、鉑、銅、銠及釕組成之群之摻雜元素；及(e5)總量0至100重量ppm之其他組分組成之摻雜銀合金， 其中任何其他組分之個別量係小於30重量ppm， 其中任何摻雜元素之個別量係至少30重量ppm， 其中以重量%及重量ppm計之所有量係基於該前驅物品之總重量， (2)延伸該前驅物品以形成經延伸之前驅物品，直至獲得在7850至31400 µm2 範圍內之中間橫剖面或在100至200 µm範圍內之中間直徑， (3)將金或鈀之單層塗層或鎳或鈀之內層及與其相鄰之金之外層之雙層塗層沈積於在完成方法步驟(2)後獲得之經延伸之前驅物品之表面上， (4)進一步延伸於完成方法步驟(3)後獲得之經塗覆前驅物品，直至獲得期望之最終橫剖面或直徑，及 (5)最終在200至600℃範圍內之烘箱設定溫度下分股退火在完成方法步驟(4)後獲得之經塗覆之前驅物歷時在0.4至0.8秒範圍內之曝露時間，以形成該經塗覆線材， 其中步驟(2)包括一或多個在400至800℃之烘箱設定溫度下中間分批退火該前驅物品歷時在50至150分鐘範圍內之曝露時間之子步驟。
  9. 如請求項8之方法，其中該至少一種摻雜元素(b2)及該至少一種摻雜元素(e4)係選自由鉑、鈣及鎳組成之群。
  10. 如請求項8之方法，其中該最終分股退火係在200至400℃範圍內之烘箱設定溫度下進行。
  11. 如請求項8之方法，其中使該經最終分股退火之經塗覆前驅物於可含有一或多種添加劑之水中淬火。
  12. 如請求項8之方法，其中方法步驟(2)之該中間分批退火係在惰性或還原氛圍中進行。
  13. 一種經塗覆線材，其可藉由如請求項8之方法獲得。
  14. 一種如請求項1或13之經塗覆線材用於在球形焊接該經塗覆線材之過程中製造FAB之用途，其特徵在於該FAB製造係在未經惰性或還原氣體淨化之空氣氛圍下進行。
  15. 如請求項14之用途，其中該FAB係軸對稱的。
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Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SG10201607523RA (en) * 2016-09-09 2018-04-27 Heraeus Materials Singapore Pte Ltd Coated wire
JP6869919B2 (ja) * 2018-04-02 2021-05-12 田中電子工業株式会社 ボールボンディング用貴金属被覆銀ワイヤおよびその製造方法、ならびにボールボンディング用貴金属被覆銀ワイヤを使用した半導体装置およびその製造方法
CN111886685B (zh) 2018-09-21 2021-10-08 日铁化学材料株式会社 半导体装置用Cu合金接合线
TWI749372B (zh) * 2018-09-21 2021-12-11 日商日鐵化學材料股份有限公司 半導體裝置用Cu合金接合導線
WO2020122809A1 (en) 2018-12-12 2020-06-18 Heraeus Materials Singapore Pte. Ltd. Process for electrically connecting contact surfaces of electronic components
JP7195208B2 (ja) * 2019-04-12 2022-12-23 三菱電機株式会社 半導体装置および半導体装置の製造方法
WO2020218968A1 (en) * 2019-04-26 2020-10-29 Heraeus Materials Singapore Pte. Ltd. Coated wire
WO2021205674A1 (ja) * 2020-04-10 2021-10-14 田中電子工業株式会社 金被覆ボンディングワイヤとその製造方法、半導体ワイヤ接合構造、及び半導体装置
SG10202010234VA (en) * 2020-10-15 2021-10-28 Heraeus Materials Singapore Pte Ltd Coated wire
JP2024505393A (ja) * 2021-02-05 2024-02-06 ヘレウス マテリアルズ シンガポール ピーティーイー． リミテッド 被覆ワイヤ
TWI818531B (zh) * 2021-05-05 2023-10-11 新加坡商新加坡賀利氏材料私人有限公司 塗佈圓線及其製造程序
TWI762342B (zh) * 2021-06-03 2022-04-21 國立臺灣大學 形成接合結構的方法
TWI819339B (zh) * 2021-07-20 2023-10-21 樂鑫材料科技股份有限公司 接合結構的形成方法
WO2023096567A1 (en) * 2021-11-23 2023-06-01 Heraeus Materials Singapore Pte. Ltd. Ball-bond arrangement

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01162343A (ja) * 1987-12-18 1989-06-26 Kobe Steel Ltd ボンディングワイヤ
JP2005167020A (ja) * 2003-12-03 2005-06-23 Sumitomo Electric Ind Ltd ボンディングワイヤーおよびそれを使用した集積回路デバイス
WO2005038902A1 (ja) 2003-10-20 2005-04-28 Sumitomo Electric Industries, Limited ボンディングワイヤーおよびそれを使用した集積回路デバイス
JP4554724B2 (ja) * 2008-01-25 2010-09-29 新日鉄マテリアルズ株式会社 半導体装置用ボンディングワイヤ
WO2010106851A1 (ja) * 2009-03-17 2010-09-23 新日鉄マテリアルズ株式会社 半導体用ボンディングワイヤ
JP2013033811A (ja) * 2011-08-01 2013-02-14 Tatsuta Electric Wire & Cable Co Ltd ボールボンディングワイヤ
WO2013076548A1 (en) * 2011-11-26 2013-05-30 Microbonds Inc. Bonding wire and process for manufacturing a bonding wire
US8940403B2 (en) * 2012-01-02 2015-01-27 Wire Technology Co., Ltd. Alloy wire and methods for manufacturing the same
TW201336598A (zh) * 2012-03-12 2013-09-16 Wire technology co ltd 銀-金-鈀合金表面鍍金屬薄膜之複合線材及其製法
TW201336599A (zh) * 2012-03-12 2013-09-16 Wire technology co ltd 銀-鈀合金表面鍍金屬薄膜之複合線材及其製造方法
EP2703116B1 (en) 2012-09-04 2017-03-22 Heraeus Deutschland GmbH & Co. KG Method for manufacturing a silver alloy wire for bonding applications
TW201430977A (zh) * 2013-01-23 2014-08-01 Heraeus Materials Tech Gmbh 用於接合應用的經塗覆線材
EP2930746A1 (en) * 2013-02-15 2015-10-14 Heraeus Materials Singapore Pte. Ltd. Copper bond wire and method of making the same
JP5420783B1 (ja) * 2013-04-05 2014-02-19 田中電子工業株式会社 高速信号線用ボンディングワイヤ
WO2014178792A1 (en) * 2013-05-03 2014-11-06 Heraeus Materials Singapore Pte., Ltd. Copper bond wire and method of making the same
JP5399581B1 (ja) * 2013-05-14 2014-01-29 田中電子工業株式会社 高速信号用ボンディングワイヤ
JP6254841B2 (ja) * 2013-12-17 2017-12-27 新日鉄住金マテリアルズ株式会社 半導体装置用ボンディングワイヤ
CN105393343A (zh) * 2014-01-31 2016-03-09 大自达电线株式会社 线键合及其制造方法

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