TW201736640A - 作為銅內連線用可縮放阻障物擴散層之具有鉭及鈦合金的多層膜 - Google Patents
作為銅內連線用可縮放阻障物擴散層之具有鉭及鈦合金的多層膜 Download PDFInfo
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- TW201736640A TW201736640A TW105140970A TW105140970A TW201736640A TW 201736640 A TW201736640 A TW 201736640A TW 105140970 A TW105140970 A TW 105140970A TW 105140970 A TW105140970 A TW 105140970A TW 201736640 A TW201736640 A TW 201736640A
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- layer
- barrier diffusion
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- titanium
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- 230000004888 barrier function Effects 0.000 title claims abstract description 107
- 238000009792 diffusion process Methods 0.000 title claims abstract description 101
- 229910001069 Ti alloy Inorganic materials 0.000 title claims abstract description 22
- 239000010949 copper Substances 0.000 title claims description 65
- 229910052802 copper Inorganic materials 0.000 title claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims description 23
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 title abstract description 7
- 229910001362 Ta alloys Inorganic materials 0.000 title description 3
- 238000000034 method Methods 0.000 claims abstract description 98
- 239000010936 titanium Substances 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims abstract description 66
- 238000000151 deposition Methods 0.000 claims abstract description 39
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 38
- 238000000231 atomic layer deposition Methods 0.000 claims abstract description 36
- 238000000137 annealing Methods 0.000 claims abstract description 29
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 24
- VSSLEOGOUUKTNN-UHFFFAOYSA-N tantalum titanium Chemical compound [Ti].[Ta] VSSLEOGOUUKTNN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 239000002243 precursor Substances 0.000 claims description 20
- -1 ruthenium halide Chemical class 0.000 claims description 16
- 229910052732 germanium Inorganic materials 0.000 claims description 14
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 13
- 229910052707 ruthenium Inorganic materials 0.000 claims description 10
- NLLZTRMHNHVXJJ-UHFFFAOYSA-J titanium tetraiodide Chemical compound I[Ti](I)(I)I NLLZTRMHNHVXJJ-UHFFFAOYSA-J 0.000 claims description 6
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 4
- NMJKIRUDPFBRHW-UHFFFAOYSA-N titanium Chemical compound [Ti].[Ti] NMJKIRUDPFBRHW-UHFFFAOYSA-N 0.000 claims description 4
- YBCAZPLXEGKKFM-UHFFFAOYSA-K ruthenium(iii) chloride Chemical compound [Cl-].[Cl-].[Cl-].[Ru+3] YBCAZPLXEGKKFM-UHFFFAOYSA-K 0.000 claims description 3
- QAKMMQFWZJTWCW-UHFFFAOYSA-N bismuth titanium Chemical compound [Ti].[Bi] QAKMMQFWZJTWCW-UHFFFAOYSA-N 0.000 claims description 2
- OEIMLTQPLAGXMX-UHFFFAOYSA-I tantalum(v) chloride Chemical compound Cl[Ta](Cl)(Cl)(Cl)Cl OEIMLTQPLAGXMX-UHFFFAOYSA-I 0.000 claims description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052715 tantalum Inorganic materials 0.000 abstract description 11
- 239000007789 gas Substances 0.000 description 11
- 238000005240 physical vapour deposition Methods 0.000 description 9
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 9
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 239000003638 chemical reducing agent Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 229910052736 halogen Inorganic materials 0.000 description 3
- 150000002367 halogens Chemical class 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- 229910052735 hafnium Inorganic materials 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical class B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 1
- GIDBEKINLBHYLA-UHFFFAOYSA-I pentachlororuthenium Chemical compound Cl[Ru](Cl)(Cl)(Cl)Cl GIDBEKINLBHYLA-UHFFFAOYSA-I 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 150000003303 ruthenium Chemical class 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- UBZYKBZMAMTNKW-UHFFFAOYSA-J titanium tetrabromide Chemical compound Br[Ti](Br)(Br)Br UBZYKBZMAMTNKW-UHFFFAOYSA-J 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- XROWMBWRMNHXMF-UHFFFAOYSA-J titanium tetrafluoride Chemical compound [F-].[F-].[F-].[F-].[Ti+4] XROWMBWRMNHXMF-UHFFFAOYSA-J 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H01L23/5226—Via connections in a multilevel interconnection structure
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- H01L21/76841—Barrier, adhesion or liner layers
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- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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Abstract
在基板上形成阻障物擴散層的方法包含使用原子層沉積製程在基板之特徵部中沉積鉭層。該方法使用原子層沉積製程在該鉭層上沉積鈦層。該方法包含使基板退火以產生包含鉭-鈦合金的阻障物擴散層。
Description
本揭露內容關於基板處理系統,且尤其關於用以沉積具有作為銅內連線用可縮放阻障物擴散層之鉭及鈦合金之多層膜的系統及方法。
在此提供的先前技術描述係為了大致呈現本揭露內容上下文之目的。此先前技術部分中所述之目前列名發明人之工作、及不可以其他方式認定為申請時之先前技術的實施態樣敘述皆不明示或暗示地承認其為針對本揭露內容之先前技術。
現參照圖1,基板50包含介電層54及一或更多下方層56。例如溝槽或貫孔之特徵部57可定義於介電層54中。阻障物擴散堆疊58係沉積在介電層54上。阻障物擴散堆疊58包含氮化鉭(TaN)層60及鉭(Ta)層62。銅晶種層64係沉積在阻障物擴散堆疊58上。銅塊體填充物層66係沉積在銅晶種層64上。
現參照圖2,顯示用以填充基板50之特徵部57的方法50。在步驟80,使用物理氣相沉積(PVD)將TaN層60沉積在介電層54上。在步驟82,使用PVD將Ta層62沉積在TaN層60上。在步驟84,使用PVD將晶種層64沉積在Ta層62上。在步驟86,將塊體Cu填充物沉積在特徵部57中。
銅(Cu)抵抗電遷移,且具有相對低的電阻。因此,Cu已被廣泛用作內連線材料。物理氣相沉積(PVD)係典型地用以沉積包含TaN層60及Ta層62的阻障物擴散堆疊58。阻障物擴散堆疊58後接沉積作為Cu塊體填充物層66之晶種層64的一或更多PVD Cu層。晶種層64及阻障物擴散堆疊58的整體厚度典型地為8~10nm。對於一些形貌中指定的較窄特徵部而言,使用此方法並不可行。
在基板上形成阻障物擴散層的方法包含(a)使用原子層沉積製程在基板之特徵部中沉積鉭層;(b)使用原子層沉積製程在該鉭層上沉積鈦層;及(c)使基板退火以產生包含鉭-鈦合金的阻障物擴散層。
在其他實施態樣中,該方法包含在(c)之前,將(a)及(b)兩者重複一或更多次。該方法包含(d)在阻障物擴散層上沉積銅晶種層。該方法包含(e)在銅晶種層上執行塊體銅填充。(c)係於(d)及(e)之前執行。(c)係於(d)之後且(e)之前執行。(c)係於(d)及(e)之後執行。
在其他實施態樣中,退火係於自200℃至450℃之溫度範圍內的溫度下執行。退火係執行維持自2至10分鐘之範圍內的預定時期。阻障物擴散層具有小於8nm的厚度。阻障物擴散層具有大於或等於2nm且小於或等於6nm的厚度。阻障物擴散層具有大於或等於2nm且小於或等於4nm的厚度。
在其他實施態樣中,該方法包含使用鉭鹵化物前驅物氣體來沉積鉭層。該方法包含使用鉭氯化物(TaCl5
)前驅物氣體來沉積鉭層。該方法包含使用鈦鹵化物前驅物氣體來沉積鈦層。該方法包含使用鈦碘化物(TiI4
)前驅物氣體來沉積鈦層。在退火之後,阻障物擴散層的鉭-鈦合金之鈦濃度為2-30原子量%。
在基板上形成阻障物擴散堆疊的方法包含(a)使用原子層沉積製程在基板之特徵部中沉積第一鈦層;(b)使用原子層沉積製程在第一鈦層上沉積鉭層;(c)使用原子層沉積製程在該鉭層上沉積第二鈦層;及(d)使基板退火,以產生包含鈦氧化物層及鉭-鈦合金的阻障物擴散堆疊。
在其他實施態樣中,該方法包含在(d)之前,將(b)及(c)兩者重複一或更多次。該方法包含(e)在阻障物擴散堆疊上沉積銅晶種層。該方法包含(f)在銅晶種層上執行塊體銅填充。(d)係於(e)及(f)之前執行。(d)係於(e)之後且(f)之前執行。(d)係於(e)及(f)之後執行。
在其他實施態樣中,退火係於自200℃至450℃之溫度範圍內的溫度下執行。退火係執行維持自2至10分鐘之範圍內的預定時期。阻障物擴散堆疊具有小於8nm的厚度。阻障物擴散堆疊具有大於或等於2nm且小於或等於6nm的厚度。阻障物擴散堆疊具有大於或等於2nm且小於或等於4nm的厚度。
在其他實施態樣中,該方法包含使用鉭鹵化物前驅物氣體來沉積鉭層。該方法包含使用鉭氯化物(TaCl5
)前驅物氣體來沉積鉭層。該方法包含使用鈦鹵化物前驅物氣體來沉積第一及第二鈦層。該方法包含使用鈦碘化物(TiI4
)前驅物氣體來沉積第一及第二鈦層。在退火之後,阻障物擴散堆疊的鉭-鈦合金之鈦濃度為2-30原子量%。
由實施方式、申請專利範圍、及圖式,本揭露內容之其他領域的可應用性將變得顯而易見。實施方式與具體範例僅意旨於說明之目的,並非意旨限制本揭露內容的範疇。
為了使得較窄特徵部的縮放得以實行,基板處理系統將需要產生用於Cu的超薄阻障物擴散層,並針對先進製程使狹窄特徵部中之低電阻Cu量最大化。阻障物擴散層中的阻障物材料對Cu提供金屬介面,並作為對於Cu、氧及水的擴散阻障。依據本揭露內容的系統及方法使用原子層沉積(ALD)以避免狹窄特徵部中的夾止(pinch-off),並提供具有均一厚度的保形阻障膜。
對於Cu內連線技術的進一步縮放而言,需要具有小於8~10nm之厚度的阻障物擴散堆疊或層。在一些範例中,依據本揭露內容之系統及方法產生包含一或更多Ti層及一或更多Ta層的阻障物擴散層,該一或更多Ti層及一或更多Ta層受到退火以產生Ta-Ti合金。所產生之阻障物擴散層具有小於或等於8nm的厚度。在一些範例中,於此敘述的系統及方法可用以產生約2~6nm厚的阻障物擴散層。在一些範例中,於此敘述的系統及方法可用以產生約2~4nm厚的阻障物擴散層。在其他範例中,於此敘述的系統及方法可用以產生約2~3nm厚的阻障物擴散層。
當使包含TaN/Ta雙層之阻障物擴散堆疊改質時遭遇到的問題為:通常需要由兩疊層提供的功能。圖1中之TaN層60運作為氧(O)、水(H2O)及銅(Cu)擴散層。圖1中之Ta層62運作為Cu潤濕及電遷移(EM)改善材料。無阻障Cu內連線不是一個可行的選項,因為多數晶片設計者利用相關於受包覆Cu金屬線的短線效應(short-line effect)(當線比Blech Length(電流密度與線長度的乘積,但亦為k的函數)短時導致無限電遷移壽命)。無阻障Cu內連線將消除無限電遷移壽命,若使Cu之鄰近層擴散至已測試金屬層中(產生Cu原子的「來源」及通量發散),無限電遷移壽命對於晶片設計者是重要的。無阻障Cu內連線亦將受到水份及O2
結合的影響。
依據本揭露內容之系統及方法提供Cu內連線用的超薄阻障物擴散層。依據本揭露內容的阻障物擴散層使較窄特徵部的縮放得以進行,同時使狹窄特徵部中之低電阻Cu的體積部分最大化。依據本揭露內容之阻障物擴散層對Cu提供金屬介面,並作為對於Cu、O及H2
O的擴散阻障。再者,依據本揭露內容的阻障物擴散層係使用原子層沉積(ALD)而非PVD製程沉積。因此,狹窄特徵部中的夾止(pinch-off)被消除,且產生具有均一厚度的保形阻障物擴散層。再者,阻障物擴散層將比TaN/Ta雙層更具傳導性。
在依據本揭露內容之方法中,阻障物擴散層包含一或更多雙層。該等雙層之各者包含使用原子層沉積(ALD)所沉積的Ta層、及使用ALD所沉積的Ti層。在沉積之後,使阻障物擴散層退火以產生Ta-Ti合金。舉例而言,可使用維持2至10分鐘之範圍內的時期之200℃至450℃之範圍內的溫度下之退火。Ta-Ti合金提供優良的EM抗性,低電阻率、良好的黏著性,且作為優良的氧及水阻障物。
在一些範例中,退火後的阻障物擴散層之Ti濃度為2~30原子量%。Ta-Ti合金中的Ta及Ti之相對濃度可藉由改變所沉積之個別Ta及Ti層的厚度加以控制。
在一些範例中,用於Ta及Ti之沉積的前驅物氣體分別為鉭氯化物(TaCl5
)氣體及鈦碘化物(TiI4
)氣體。在一些範例中,阻障物擴散堆疊係以Ti層與Cu接觸的情況沉積,俾以預防Ta層中殘留的氯接觸Cu,因為膜中殘留的氯(~1%)可能腐蝕Cu。Ti層為接觸Cu的良好材料。在一些範例中,Ti層為相對薄,以使進入Cu的Ti擴散最小化。
由於Ta及Ti在建議組成範圍內係完全互溶,所以Ta及Ti層在所有建議組成交互擴散以形成Ta-Ti合金之單一阻障物。擴散阻障物堆疊的最終組成係藉由改變擴散阻障物堆疊中之單獨Ta及Ti層的厚度及數量加以控制。
在另一範例中,擴散阻障物堆疊可包含不同數量的Ta層。舉例而言,擴散阻障物堆疊可包含Ti-Ta-Ti或其變化例,例如Ti-Ta-Ti-Ta-Ti等。與介電材料接觸的Ti層將在退火期間形成TiO2
,其改善多層的阻障效能。注意TiO2
將不形成在對金屬內連線(Cu接點)之介面處,且僅形成在貫孔及溝槽的側壁上。
現參照圖3A~3D,顯示包含例如貫孔及/或溝槽之特徵部102的基板100。基板100包含介電層104。在圖3A中,Ta層106係使用一或更多原子層沉積(ALD)循環沉積在介電層104上。
在一些範例中,Ta層106係如題為「ALD of Tantalum Using a Hydride Reducing Agent」的共同受讓美國專利第7144806號所述,藉由使鉭鹵化物吸附於基板上、並還原所吸附之鉭鹵化物以產生鉭而沉積,該美國專利案係於2006年12月5日公告且於此整體併入做為參考。舉例而言,鉭鹵化物可包含五氯化鉭(TaCl5
),然而亦可使用其他鉭鹵化物。舉例而言,還原劑可包含氫化物,例如SiH4
、SiH6
、B2
H6
或其他硼氫化物。在還原劑之後,可執行可選的電漿處理步驟以移除多餘的鹵素副產物及未反應的鹵素反應物。舉例而言,可執行鹵素電漿處理步驟。若有使用,電漿可為直接的或遠端的。在一些範例中,腔室壓力可在自0.1至20 Torr (且尤其介於0.1至3 Torr之間)之範圍內,然而亦可使用其他壓力。在一些範例中,腔室溫度可低於450℃(且更尤其介於100℃與350℃之間),然而亦可使用其他溫度。在一些範例中,鉭鹵化物暴露係介於約1至30秒之間,然而亦可使用其他暴露時期。
在圖3B中,Ti層108係使用一或更多原子層沉積(ALD)循環沉積在Ta層106上。在一些範例中,Ti層108係使用鈦鹵化物前驅物而沉積。舉例而言,鈦鹵化物前驅物可包含具有化學式TiXn
的化合物,其中n為2(含)至4(含)之間的整數,且X為鹵化物。具體範例包含四碘化鈦(TiI4
)、四氯化鈦(TiCl4
)、四氟化鈦(TiF4
)、四溴化鈦(TiBr4
)等。額外細節可在題為「Method and Apparatus to Deposit Pure Titanium Thin Film at Low Temperature Using Titanium Tetraiodide Precursor」、2014年8月20日提出申請的共同受讓之美國專利申請案第 14/464462號 (代理人卷號LAMRP118/3427-1US)中尋得,該美國專利申請案係於此整體併入做為參考。若有使用,電漿可為直接的或遠端的。在一些範例中,每一循環包含使處理腔室中的基板暴露於鈦鹵化物、沖洗處理腔室、使基板暴露於點燃之電漿、沖洗處理腔室、及重複以獲得所需厚度。在一些範例中,腔室壓力可在自0.1至20 Torr (且尤其介於0.1至3 Torr之間)之範圍內,然而亦可使用其他壓力。腔室溫度可低於450℃(且更尤其介於100℃與350℃之間),然而亦可使用其他溫度。在一些範例中,鈦鹵化物暴露係介於約1至30秒之間,然而亦可使用其他暴露時期。在一些範例中,沖洗發生1至5秒,然而亦可使用其他沖洗時期。在一些範例中,電漿暴露係約1至10秒,然而亦可使用其他電漿暴露時期。
在一些範例中,ALD製程可重複一或更多次,以沉積各包含Ta層及Ti層的額外雙層。僅為例示,可沉積Ta-Ti-Ta-Ti多層。
在圖3C中,執行退火步驟以在維持2至10分鐘之範圍內的時期之200℃至450℃之範圍內的溫度下產生Ta-Ti合金層112。在圖3D中,沉積Cu晶種層120及Cu塊體填充物層124。舉例而言,可使用銅電鍍製程、銅無電電鍍製程、具有回流(reflow)之銅PVD製程、或ALD製程。
現參照圖4A~4C,顯示產生阻障物擴散層的方法150。在圖4A中之步驟154,使用ALD製程沉積鉭層。在步驟156,使用ALD製程在鉭層上沉積鈦層。在步驟160,可沉積一或更多額外的Ta-Ti雙層。在步驟164,使基板退火以產生Ta/Ti合金層。在圖4A中,步驟164之退火係於沉積Ta/Ti雙層之後且於沉積晶種層之前執行,然而退火可在另一時間執行。在步驟168,可沉積一或更多晶種層。在步驟170,可執行塊體Cu填充。在步驟172,可執行化學機械拋光(CMP)。
在圖4B中,退火係於步驟164執行,在步驟168之晶種層之後,且在步驟170之塊體填充之前。在圖4C中,退火係執行於步驟164,在步驟170之塊體填充之後,且於步驟172之CMP之前。
現參照圖5A~5D,顯示包含例如貫孔及/或溝槽之特徵部202的基板200。基板200包含介電層204。在圖5A中,Ti層206係使用原子層沉積(ALD)製程沉積在介電層204上。在圖5B中,Ta層208係使用原子層沉積(ALD)製程沉積在Ti層206上。在圖5C中,Ti層210係使用原子層沉積(ALD)製程沉積在Ta層208上。可沉積額外的Ta-Ti雙層。在圖5D中,執行退火步驟以產生包含TiO2
層220(位於Ti層206與介電層204之間的介面)及Ta-Ti合金層224的阻障物擴散堆疊。可如以上圖3D中所述沉積Cu晶種層120及Cu塊體填充物層124。
現參照圖6A~6C,顯示沉積阻障物擴散堆疊的方法。在步驟254,使用ALD製程沉積Ti層。在步驟256,使用ALD製程在Ti層上沉積Ta層。在步驟258,在Ta層上沉積Ti層。在步驟260,可沉積一或更多額外Ta-Ti雙層。在步驟264,使基板退火,以產生包含鄰近介電層之TiO2層及其他區域中之Ta-Ti合金的阻障物擴散推疊。在圖6A中,步驟264之退火係於沉積Ta/Ti雙層之後、且於沉積晶種層之前執行。然而退火可在另一時間執行。在步驟268,可沉積一或更多晶種層。在步驟270,可執行塊體Cu填充。
在圖6B中,退火係執行於步驟264,在步驟268之晶種層之後,且在步驟270之塊體填充之前。在圖6C中,執行於步驟264的退火係於步驟270之塊體填充之後、且於步驟272之CMP之前執行。
先前描述在本質上僅為說明性的,而絕非意圖限制本揭露內容、其應用、或用途。本揭露內容之廣泛教示可以各種形式實施。因此,雖本揭露內容包括特定範例,然由於當研究圖式、說明書、與以下申請專利範圍時,其他變化將變得顯而易見,故本揭露內容之真實範疇不應如此受限。應理解,在不改變本揭露內容之原理的情形下,方法中之一或更多步驟可以不同次序(或同時)執行。再者,雖實施例之每一者係於以上描述為具有某些特徵,然關於本揭露內容之任何實施例所述該等特徵之任何一或更多者可在任何其他實施例中實施、及/或與其特徵組合(即使並未明確描述該組合)。換言之,所述實施例並非相互排斥,且一或更多實施例彼此的置換維持在本揭露內容之範疇中。
元件 (例如,在模組、電路元件、半導體疊層等) 之間的空間與功能上的關係乃使用包括「連接」、「接合」、「耦合」、「鄰近」、「在…旁」、「在…之上」、「上方」、「下方」、與「設置」之各種術語描述。除非明確地描述為「直接」之情形下,否則當於上述揭露內容中描述第一與第二元件之間的關係時,該關係可為在第一與第二元件之間不存在其它中介元件之直接關係,亦可為在第一與第二元件之間存在一或更多中介元件(空間上或功能上)的間接關係。如本文所用,詞組「A、B、與C之至少一者」應解釋成意指使用非排除性邏輯OR之邏輯(A OR B OR C),且不應解釋成代表「A之至少一者、B之至少一者、與C之至少一者」。
50‧‧‧基板
54‧‧‧介電層
56‧‧‧下方層
57‧‧‧特徵部
58‧‧‧阻障物擴散堆疊
60‧‧‧氮化鉭層(TaN層)
62‧‧‧鉭層(Ta層)
64‧‧‧晶種層
66‧‧‧銅塊體填充物層
75‧‧‧方法
80‧‧‧步驟
82‧‧‧步驟
84‧‧‧步驟
86‧‧‧步驟
100‧‧‧基板
102‧‧‧特徵部
104‧‧‧介電層
106‧‧‧Ta層
108‧‧‧Ti層
112‧‧‧Ta-Ti合金層
120‧‧‧Cu晶種層
124‧‧‧Cu塊體填充物層
150‧‧‧方法
154‧‧‧步驟
156‧‧‧步驟
160‧‧‧步驟
164‧‧‧步驟
168‧‧‧步驟
170‧‧‧步驟
172‧‧‧步驟
200‧‧‧基板
202‧‧‧特徵部
204‧‧‧介電層
206‧‧‧Ti層
208‧‧‧Ta層
210‧‧‧Ti層
220‧‧‧TiO2 層
224‧‧‧Ta-Ti合金層
254‧‧‧步驟
256‧‧‧步驟
258‧‧‧步驟
260‧‧‧步驟
264‧‧‧步驟
268‧‧‧步驟
270‧‧‧步驟
54‧‧‧介電層
56‧‧‧下方層
57‧‧‧特徵部
58‧‧‧阻障物擴散堆疊
60‧‧‧氮化鉭層(TaN層)
62‧‧‧鉭層(Ta層)
64‧‧‧晶種層
66‧‧‧銅塊體填充物層
75‧‧‧方法
80‧‧‧步驟
82‧‧‧步驟
84‧‧‧步驟
86‧‧‧步驟
100‧‧‧基板
102‧‧‧特徵部
104‧‧‧介電層
106‧‧‧Ta層
108‧‧‧Ti層
112‧‧‧Ta-Ti合金層
120‧‧‧Cu晶種層
124‧‧‧Cu塊體填充物層
150‧‧‧方法
154‧‧‧步驟
156‧‧‧步驟
160‧‧‧步驟
164‧‧‧步驟
168‧‧‧步驟
170‧‧‧步驟
172‧‧‧步驟
200‧‧‧基板
202‧‧‧特徵部
204‧‧‧介電層
206‧‧‧Ti層
208‧‧‧Ta層
210‧‧‧Ti層
220‧‧‧TiO2 層
224‧‧‧Ta-Ti合金層
254‧‧‧步驟
256‧‧‧步驟
258‧‧‧步驟
260‧‧‧步驟
264‧‧‧步驟
268‧‧‧步驟
270‧‧‧步驟
本揭露內容將由實施方式與附圖而變得更受到完整瞭解,其中:
圖1為包含依據先前技術之特徵部、阻障層、Cu晶種層及塊體Cu填充物的基板之側剖面圖;
圖2為依據先前技術填充圖1之特徵部的方法範例;
圖3A~3D為包含依據本揭露內容之特徵部、Ta-Ti阻障層、Cu晶種層及塊體Cu填充物的基板之側剖面圖;
圖4A~4C為填充圖3A~3D之特徵部的方法範例;
圖5A~5D為包含依據本揭露內容之特徵部、Ti-Ta-Ti阻障層、Cu晶種層及塊體Cu填充物的基板之側剖面圖;且
圖6A~6C為填充圖5A~5D之特徵部的方法範例。
在圖式中,參考編號可重複使用以指示相似及/或相同的元件。
150‧‧‧方法
154‧‧‧步驟
156‧‧‧步驟
160‧‧‧步驟
164‧‧‧步驟
168‧‧‧步驟
170‧‧‧步驟
172‧‧‧步驟
Claims (34)
- 一種在基板上形成阻障物擴散層的方法,包含: (a) 使用原子層沉積製程在基板之特徵部中沉積一鉭層; (b) 使用原子層沉積製程在該鉭層上沉積一鈦層;及 (c) 使該基板退火,以產生包含一鉭-鈦合金的阻障物擴散層。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,更包含在(c)之前,將(a)及(b)兩者重複一或更多次。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,更包含(d) 在該阻障物擴散層上沉積一銅晶種層。
- 如申請專利範圍第3項之在基板上形成阻障物擴散層的方法,更包含(e) 在該銅晶種層上執行塊體銅填充。
- 如申請專利範圍第4項之在基板上形成阻障物擴散層的方法,其中(c)係於(d)及(e)之前執行。
- 如申請專利範圍第4項之在基板上形成阻障物擴散層的方法,其中(c)係於(d)之後且(e)之前執行。
- 如申請專利範圍第4項之在基板上形成阻障物擴散層的方法,其中(c)係於(d)及(e)之後執行。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,其中該退火係於自200℃至450℃之溫度範圍內的溫度下執行。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,其中該退火係執行維持自2至10分鐘之範圍內的一預定時期。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,其中該阻障物擴散層具有小於8nm的厚度。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,其中該阻障物擴散層具有大於或等於2nm且小於或等於6nm的厚度。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,其中該阻障物擴散層具有大於或等於2nm且小於或等於4nm的厚度。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,更包含使用一鉭鹵化物前驅物氣體來沉積該鉭層。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,更包含使用一鉭氯化物(TaCl5 )前驅物氣體來沉積該鉭層。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,更包含使用一鈦鹵化物前驅物氣體來沉積該鈦層。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,更包含使用一鈦碘化物(TiI4 )前驅物氣體來沉積該鈦層。
- 如申請專利範圍第1項之在基板上形成阻障物擴散層的方法,其中在該退火之後,該阻障物擴散層的該鉭-鈦合金之鈦濃度為2-30原子量%。
- 一種在基板上形成阻障物擴散堆疊的方法,包含: (a) 使用原子層沉積製程在基板之特徵部中沉積一第一鈦層; (b) 使用原子層沉積製程在該第一鈦層上沉積一鉭層; (c) 使用原子層沉積製程在該鉭層上沉積一第二鈦層;及 (d) 使該基板退火,以產生包含一鈦氧化物層及一鉭-鈦合金的一阻障物擴散堆疊。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,其中在(d)之前,將(b)及(c)兩者重複一或更多次。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,更包含(e)在該阻障物擴散堆疊上沉積一銅晶種層。
- 如申請專利範圍第20項之在基板上形成阻障物擴散堆疊的方法,更包含(f) 在該銅晶種層上執行塊體銅填充。
- 如申請專利範圍第21項之在基板上形成阻障物擴散堆疊的方法,其中(d)係於(e)及(f)之前執行。
- 如申請專利範圍第21項之在基板上形成阻障物擴散堆疊的方法,其中(d)係於(e)之後且(f)之前執行。
- 如申請專利範圍第21項之在基板上形成阻障物擴散堆疊的方法,其中(d)係於(e)及(f)之後執行。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,其中該退火係於自200℃至450℃之溫度範圍內的溫度下執行。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,其中該退火係執行維持自2至10分鐘之範圍內的一預定時期。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,其中該阻障物擴散堆疊具有小於8nm的厚度。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,其中該阻障物擴散堆疊具有大於或等於2nm且小於或等於6nm的厚度。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,其中該阻障物擴散堆疊具有大於或等於2nm且小於或等於4nm的厚度。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,更包含使用一鉭鹵化物前驅物氣體來沉積該鉭層。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,更包含使用一鉭氯化物(TaCl5 )前驅物氣體來沉積該鉭層。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,更包含使用一鈦鹵化物前驅物氣體來沉積該第一及第二鈦層。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,更包含使用一鈦碘化物(TiI4 )前驅物氣體來沉積該第一及第二鈦層。
- 如申請專利範圍第18項之在基板上形成阻障物擴散堆疊的方法,其中在該退火之後,該阻障物擴散層的該鉭-鈦合金之鈦濃度為2-30原子量%。
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US10689405B2 (en) * | 2017-11-30 | 2020-06-23 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Titanium-containing film forming compositions for vapor deposition of titanium-containing films |
US10584039B2 (en) * | 2017-11-30 | 2020-03-10 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Titanium-containing film forming compositions for vapor deposition of titanium-containing films |
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US6391785B1 (en) * | 1999-08-24 | 2002-05-21 | Interuniversitair Microelektronica Centrum (Imec) | Method for bottomless deposition of barrier layers in integrated circuit metallization schemes |
US6503641B2 (en) * | 2000-12-18 | 2003-01-07 | International Business Machines Corporation | Interconnects with Ti-containing liners |
US6958291B2 (en) * | 2003-09-04 | 2005-10-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interconnect with composite barrier layers and method for fabricating the same |
KR100703968B1 (ko) * | 2005-01-13 | 2007-04-06 | 삼성전자주식회사 | 반도체 소자의 배선 형성 방법 |
US8039391B1 (en) * | 2006-03-27 | 2011-10-18 | Spansion Llc | Method of forming a contact in a semiconductor device with engineered plasma treatment profile of barrier metal layer |
JP2008031541A (ja) * | 2006-07-31 | 2008-02-14 | Tokyo Electron Ltd | Cvd成膜方法およびcvd成膜装置 |
JP5380901B2 (ja) * | 2008-05-12 | 2014-01-08 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
US8772158B2 (en) * | 2012-07-20 | 2014-07-08 | Globalfoundries Inc. | Multi-layer barrier layer stacks for interconnect structures |
US9406615B2 (en) * | 2013-12-24 | 2016-08-02 | Intel Corporation | Techniques for forming interconnects in porous dielectric materials |
US9297775B2 (en) * | 2014-05-23 | 2016-03-29 | Intermolecular, Inc. | Combinatorial screening of metallic diffusion barriers |
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2015
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