TW201735753A - Pattering process of circuit substrate and circuit substrate - Google Patents

Pattering process of circuit substrate and circuit substrate Download PDF

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Publication number
TW201735753A
TW201735753A TW105108350A TW105108350A TW201735753A TW 201735753 A TW201735753 A TW 201735753A TW 105108350 A TW105108350 A TW 105108350A TW 105108350 A TW105108350 A TW 105108350A TW 201735753 A TW201735753 A TW 201735753A
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layer
circuit substrate
lines
circuit
groove
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TW105108350A
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Chinese (zh)
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TWI595820B (en
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陳文勇
陳建彰
吳國玄
邱建宏
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頎邦科技股份有限公司
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Application filed by 頎邦科技股份有限公司 filed Critical 頎邦科技股份有限公司
Priority to TW105108350A priority Critical patent/TWI595820B/en
Priority to CN201610227095.XA priority patent/CN107205320B/en
Priority to KR1020160047120A priority patent/KR101836298B1/en
Priority to JP2016086926A priority patent/JP6255054B2/en
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Publication of TWI595820B publication Critical patent/TWI595820B/en
Publication of TW201735753A publication Critical patent/TW201735753A/en

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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/02Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/06Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0079Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the method of application or removal of the mask
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • H01L23/14Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H01L23/147Semiconductor insulating substrates
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0041Etching of the substrate by chemical or physical means by plasma etching
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0073Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
    • H05K3/0082Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the exposure method of radiation-sensitive masks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/321Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives
    • H05K3/323Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by conductive adhesives by applying an anisotropic conductive adhesive layer over an array of pads
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/13Moulding and encapsulation; Deposition techniques; Protective layers
    • H05K2203/1305Moulding and encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Manufacturing Of Printed Wiring (AREA)
  • Structure Of Printed Boards (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)

Abstract

A pattering process of circuit substrate includes providing a waiting-for-patterning circuit substrate, wherein the waiting-for-patterning circuit substrate comprises a basal plate, a circuit layer and a connecting layer located between the basal plate and the circuit layer, the basal plate has a activated layer and the partial connecting layer embedded in the activated layer to lead the activated layer having the connecting layer transform to a mix layer, forming a photoresist layer on the circuit layer, and patterning the photoresist layer, the circuit layer, the connecting layer and the basal plate sequentially to form a patterned circuit substrate.

Description

線路基板圖案化製程及線路基板Circuit substrate patterning process and circuit substrate

本發明為一種線路基板圖案化製程及線路基板,特別是一種可提高接著劑(例如:非導電膠、導電膠等填充膠)附著力的線路基板圖案化製程及線路基板。The invention relates to a circuit substrate patterning process and a circuit substrate, in particular to a circuit substrate patterning process and a circuit substrate capable of improving the adhesion of an adhesive (for example, a non-conductive adhesive, a conductive adhesive, etc.).

在習知的線路基板製程中,會先活化處理一底板的一表面,以利於後續製程中形成線路,然而經活化處理的該表面會吸附雜質,使得接著劑(例如:非導電膠、導電膠等填充膠)不易附著於該底板的該表面,而降低該線路基板與一玻璃基板之結合強度,因此如何提高接著劑於底板表面的附著力為本領域亟欲解決之問題。In the conventional circuit substrate process, a surface of a substrate is first activated to facilitate formation of a circuit in a subsequent process, but the surface treated by the activation process adsorbs impurities, such as a non-conductive paste or a conductive paste. The filling glue is not easy to adhere to the surface of the bottom plate, and the bonding strength between the circuit substrate and a glass substrate is lowered. Therefore, how to improve the adhesion of the adhesive to the surface of the bottom plate is a problem to be solved in the art.

本發明之主要目的在於提供一種線路基板圖案化製程及線路基板,以避免底板吸附雜質而影響接著劑(例如:非導電膠、導電膠等填充膠)與底板之間的接合強度,造成封裝構造可靠度不佳。The main object of the present invention is to provide a circuit substrate patterning process and a circuit substrate to prevent the substrate from adsorbing impurities and affect the bonding strength between the adhesive (for example, non-conductive adhesive, conductive adhesive, etc.) and the bottom plate, resulting in a package structure. Poor reliability.

本發明之一種線路基板圖案化製程,其包含:提供一待圖案化線路基板,該待圖案化線路基板具有一底板、一結合層及一線路層,該結合層位於該底板及該線路層之間,該底板具有一活化層及一未活化層,該底板經由一活化處理而形成該活化層,部份的該結合層嵌入該活化層中,使得嵌有該結合層的該活化層形成為一混合層;形成一光阻層,該光阻層罩蓋該線路層;圖案化該光阻層,以形成複數個開口,該些開口顯露該線路層;圖案化該線路層,以該光阻層為遮罩,移除被該些開口顯露的該線路層,使該線路層形成複數個線路,相鄰的兩個該線路之間具有一第一槽,該第一槽顯露該結合層;移除該光阻層;圖案化該結合層,以該些線路為遮罩,移除被該些第一槽顯露且未嵌入該活化層的該結合層,使位於該些線路下方的該結合層形成複數個第一承載部,相鄰的兩個該第一承載部之間具有一第二槽,該第二槽顯露該混合層;以及圖案化該底板,以該些第一承載部為遮罩,移除被該些第二槽顯露的該混合層,使位於該些第一承載部下方的該混合層形成複數個第二承載部,相鄰的兩個該第二承載部之間具有一第三槽,該第三槽顯露該未活化層。A circuit substrate patterning process of the present invention includes: providing a circuit substrate to be patterned, the circuit board to be patterned having a bottom plate, a bonding layer and a circuit layer, wherein the bonding layer is located on the bottom plate and the circuit layer The bottom plate has an active layer and an unactivated layer, the bottom plate is formed by an activation process, and a portion of the bonding layer is embedded in the active layer such that the active layer embedded with the bonding layer is formed as a mixed layer; forming a photoresist layer, the photoresist layer covering the circuit layer; patterning the photoresist layer to form a plurality of openings, the openings revealing the circuit layer; patterning the circuit layer to the light The resist layer is a mask, and the circuit layer exposed by the openings is removed, so that the circuit layer forms a plurality of lines, and a first groove is formed between two adjacent lines, and the first groove exposes the bonding layer Removing the photoresist layer; patterning the bonding layer, using the lines as a mask, removing the bonding layer exposed by the first trenches and not embedded in the active layer, so that the underlying lines The bonding layer forms a plurality of first bearings a second groove between the two adjacent first bearing portions, the second groove revealing the mixed layer; and patterning the bottom plate, the first bearing portion is a mask, and the removing is The mixed layer exposed by the second slots is such that the mixed layer under the first carrying portions forms a plurality of second carrying portions, and the adjacent two of the second carrying portions have a third slot therebetween. The third tank reveals the unactivated layer.

本發明藉由移除該些第二槽顯露的該混合層,以避免容易吸附雜質的該混合層影響接著劑(例如:非導電膠、導電膠等填充膠)的附著力,因此當線路基板與玻璃基板進行封裝時,可避免因接著劑與線路基板之間的接合強度不佳而降低封裝構造良率。The present invention removes the mixed layer exposed by the second grooves to prevent the mixed layer which easily adsorbs impurities from affecting the adhesion of the adhesive (for example, a non-conductive adhesive, a conductive adhesive, etc.), and thus the circuit substrate When packaging with a glass substrate, it is possible to avoid a decrease in package construction yield due to poor bonding strength between the adhesive and the wiring substrate.

請參閱第1圖,其為本發明之一實施例,一種線路基板圖案化製程10包含「提供待圖案化線路基板」11、「形成光阻層」12、「圖案化光阻層」13、「圖案化線路層」14、「移除光阻層」15、「圖案化結合層」16及「圖案化底板」17。Referring to FIG. 1 , a circuit substrate patterning process 10 includes “providing a circuit substrate to be patterned” 11 , “forming a photoresist layer” 12 , and “patterning a photoresist layer” 13 . "patterned wiring layer" 14, "removal photoresist layer" 15, "patterned bonding layer" 16 and "patterned substrate" 17.

請參閱第1及5圖,於「提供待圖案化線路基板」步驟11中,提供一待圖案化線路基板100,該待圖案化線路基板100具有一底板110、一結合層120及一線路層130,該結合層120位於該底板110及該線路層130之間,在本實施例中,該底板110之材質為聚亞醯胺(Polyimide, PI),該結合層120之材質為鎳鉻合金,該線路層130之材質為銅。Referring to FIGS. 1 and 5, in the step 11 of providing a circuit board to be patterned, a circuit board 100 to be patterned is provided. The circuit board 100 to be patterned has a bottom plate 110, a bonding layer 120 and a circuit layer. 130, the bonding layer 120 is located between the bottom plate 110 and the circuit layer 130. In this embodiment, the material of the bottom plate 110 is Polyimide (PI), and the bonding layer 120 is made of nickel-chromium alloy. The material of the circuit layer 130 is copper.

請參閱第2至4圖,其為該待圖案化線路基板100之製造流程,首先,請參閱第3圖,該底板110經由一活化處理而形成一活化層111及一未活化層112,該活化層111可提高該結合層120的附著力,請參閱第2圖,在本實施例中,該活化處理係以電漿活化該底板110之一待活化區110a,以使該待活化區110a形成該活化層111,接著,請參閱第4圖,形成該結合層120於該底板110上,該結合層120覆蓋該活化層111,且部份的該結合層120嵌入該活化層111中,使得嵌有該結合層120的該活化層111形成一混合層113,在本實施例中,該結合層120係經由濺鍍複數個金屬粒子於該活化層110所形成,且部份的該些金屬粒子嵌入該活化層111中,以形成該混合層113,最後,請參閱第5圖,形成該線路層130於該結合層120上,以形成該待圖案化線路基板100。Please refer to FIGS. 2 to 4 , which are manufacturing processes of the circuit board 100 to be patterned. First, referring to FIG. 3 , the substrate 110 forms an active layer 111 and an unactivated layer 112 via an activation process. The activation layer 111 can improve the adhesion of the bonding layer 120. Referring to FIG. 2, in the embodiment, the activation process activates one of the substrate 110 to be activated by a plasma to activate the region 110a. Forming the active layer 111. Next, referring to FIG. 4, the bonding layer 120 is formed on the bottom plate 110. The bonding layer 120 covers the active layer 111, and a portion of the bonding layer 120 is embedded in the active layer 111. The active layer 111 embedded with the bonding layer 120 forms a mixed layer 113. In the embodiment, the bonding layer 120 is formed by sputtering a plurality of metal particles on the active layer 110, and some of the layers are formed. Metal particles are embedded in the active layer 111 to form the mixed layer 113. Finally, referring to FIG. 5, the wiring layer 130 is formed on the bonding layer 120 to form the circuit substrate 100 to be patterned.

請參閱第1及6圖,於「形成光阻層」步驟12中,形成一光阻層200於該線路層130上,該光阻層200罩蓋該線路層130。Referring to FIGS. 1 and 6, in step 12 of forming a photoresist layer, a photoresist layer 200 is formed on the wiring layer 130, and the photoresist layer 200 covers the wiring layer 130.

請參閱第1及7圖,於「圖案化光阻層」步驟13中,以曝光及顯影等製程使該光阻層200形成複數個開口210,該些開口210顯露該線路層130。Referring to FIGS. 1 and 7, in the "patterned photoresist layer" step 13, the photoresist layer 200 is formed into a plurality of openings 210 by exposure and development processes, and the openings 210 expose the circuit layer 130.

請參閱第1及8圖,於「圖案化線路層」步驟14中,以該光阻層200為遮罩,移除被該些開口210顯露的該線路層130,使該線路層130形成複數個線路131,其中,相鄰的兩個該線路131之間具有一第一槽132,該第一槽132顯露該結合層120,在本實施例中,係以一第一蝕刻液蝕刻該線路層130,以移除被該些開口210顯露的該線路層130,其中,該第一蝕刻液之主要成分包含氯化氫及氯化銅。Referring to FIGS. 1 and 8, in the "patterned circuit layer" step 14, the photoresist layer 200 is used as a mask to remove the circuit layer 130 exposed by the openings 210, so that the circuit layer 130 forms a plurality a line 131, wherein a first groove 132 is formed between the two adjacent lines 131, and the first groove 132 exposes the bonding layer 120. In this embodiment, the line is etched with a first etching solution. The layer 130 is configured to remove the circuit layer 130 exposed by the openings 210, wherein the main component of the first etching solution comprises hydrogen chloride and copper chloride.

請參閱第1及9圖,於「移除光阻層」步驟15中,移除該光阻層200,以顯露該些線路131,在本實施例中,係以含有氫氧化鉀的除膠液移除該光阻層200。Referring to Figures 1 and 9, in the "Removing the photoresist layer" step 15, the photoresist layer 200 is removed to expose the lines 131. In this embodiment, the glue is removed with potassium hydroxide. The liquid removes the photoresist layer 200.

請參閱第1及10圖,於「圖案化結合層」步驟16中,以該些線路131為遮罩,移除被該些第一槽132顯露且未嵌入該活化層111的該結合層120,使位於該些線路131下方的該結合層120形成複數個第一承載部121,相鄰的兩個該第一承載部121之間具有一第二槽122,該第二槽122顯露該混合層113,在本實施例中,係以一第二蝕刻液蝕刻該結合層120,以移除被該些第一槽132顯露且未嵌入該活化層111的該結合層120,其中,該第二蝕刻液之主要成分包含氯化氫、銅化合物、硝酸誘導體、脂肪酸誘導體及亞烷基乙二醇誘導體。Referring to FIGS. 1 and 10, in the "patterned bonding layer" step 16, the bonding layer 120 exposed by the first trenches 132 and not embedded in the active layer 111 is removed by using the lines 131 as a mask. The bonding layer 120 under the lines 131 forms a plurality of first carrying portions 121, and a second slot 122 is formed between the two adjacent first carrying portions 121. The second slot 122 reveals the mixing. In the embodiment, the bonding layer 120 is etched by a second etching solution to remove the bonding layer 120 exposed by the first trenches 132 and not embedded in the active layer 111. The main components of the second etching solution include hydrogen chloride, a copper compound, a nitric acid inducer, a fatty acid inducer, and an alkylene glycol inducer.

請參閱第1及11圖,於「圖案化底板」步驟17中,以該些第一承載部121為遮罩,移除被該些第二槽122顯露的該混合層113,使位於該些第一承載部121下方的該混合層113形成複數個第二承載部114,並使該底板110形成一圖案化底板110’,其中相鄰的兩個該第二承載部114之間具有一第三槽115,該第三槽115顯露該底板110之該未活化層112,在本實施例中,係以一等向蝕刻液蝕刻該底板110,以移除被該些第二槽122顯露的該混合層113,其中,該等向性蝕刻液選自於高錳酸鉀或氫氧化鈉。Referring to FIGS. 1 and 11, in the "patterned bottom plate" step 17, the first carrying portion 121 is used as a mask to remove the mixed layer 113 exposed by the second grooves 122, so as to be located therein. The mixed layer 113 under the first carrying portion 121 forms a plurality of second carrying portions 114, and the bottom plate 110 forms a patterned bottom plate 110', wherein the adjacent two of the second carrying portions 114 have a first a third trench 115 exposing the unactivated layer 112 of the bottom plate 110. In this embodiment, the bottom plate 110 is etched with an isotropic etching solution to remove the exposed portions of the second trench 122. The mixed layer 113, wherein the isotropic etching liquid is selected from potassium permanganate or sodium hydroxide.

請參閱第11圖,該待圖案化線路基板100經由步驟11至17的處理而形成一線路基板100’,該線路基板100’包含該圖案化底板110’、該些第一承載部121及該些線路131,該些第一承載部121位於該圖案化底板110’與該些線路131之間,且該些線路131設置於該些第一承載部121上,該圖案化底板110’包含該些第二承載部114及該未活化層112,該些第二承載部114分別位於該些第一承載部121與該未活化層112之間,且該些第二承載部114形成於該未活化層112上。Referring to FIG. 11 , the circuit board 100 to be patterned forms a circuit substrate 100 ′ through the processing of steps 11 to 17 , and the circuit substrate 100 ′ includes the patterned substrate 110 ′, the first carrier portions 121 , and the The first carrying portion 121 is located between the patterned bottom plate 110 ′ and the lines 131 , and the lines 131 are disposed on the first carrying portions 121 , and the patterned bottom plate 110 ′ The second carrying portion 114 and the unactivated layer 112 are respectively located between the first carrying portion 121 and the unactivated layer 112, and the second carrying portions 114 are formed at the On the activation layer 112.

請參閱第11圖,在本實施例中,各該第一承載部121具有一第一外環面121a,各該第二承載部114具有一第二外環面114a,於圖案化該底板110過程中,因等向性蝕刻使得該第二外環面114a與沿著該第一外環面121a的一縱向延伸線L之間形成一側蝕槽S,該側蝕槽S位於該第一承載部121下方且連通該第三槽115,該第二外環面114a與該縱向延伸線L之間具有一第一水平距離D1,該第一水平距離D1為該第二外環面114a與該縱向延伸線L之最短距離。Referring to FIG. 11 , in the embodiment, each of the first bearing portions 121 has a first outer annular surface 121 a , and each of the second bearing portions 114 has a second outer annular surface 114 a for patterning the bottom plate 110 . During the process, the isotropic etching forms a side etching S between the second outer annular surface 114a and a longitudinally extending line L along the first outer annular surface 121a, and the lateral etching groove S is located at the first A first horizontal distance D1 is defined between the second outer annular surface 114a and the longitudinally extending line L, and the first horizontal distance D1 is the second outer annular surface 114a and The shortest distance of the longitudinal extension line L.

請參閱第1及12圖,在本實施例中,於圖案化該底板110(步驟17)後另包含一「蝕刻線路」步驟18,於「蝕刻線路」步驟18中,蝕刻該些線路131,使該第一槽132擴大以顯露出該第一承載部121之一表面121b,其中,蝕刻後的各該線路131具有一第三外環面131a及一頂面131b,在本實施例中,係以一第三蝕刻液蝕刻該些線路131,該第三蝕刻液之主要成分包含硫酸氫鉀、過二硫酸鉀及無機鹽酸,或者在其他實施例中,該第三蝕刻液可選自於硫酸或雙氧水。Referring to FIGS. 1 and 12, in the embodiment, after patterning the substrate 110 (step 17), an "etching line" step 18 is further included. In the "etching line" step 18, the lines 131 are etched. The first groove 132 is enlarged to expose a surface 121b of the first bearing portion 121. The etched line 131 has a third outer ring surface 131a and a top surface 131b. In this embodiment, The lines 131 are etched by a third etching solution, and the main component of the third etching solution comprises potassium hydrogen sulfate, potassium peroxydisulfate and inorganic hydrochloric acid, or in other embodiments, the third etching liquid may be selected from Sulfuric acid or hydrogen peroxide.

請參閱第1及13圖,在本實施例中,於蝕刻該些線路131(步驟18)後另包含一「形成連結層」步驟19,於「形成連結層」步驟19中,形成一連結層140於各該線路131,該連結層140覆蓋各該線路131之該第三外環面131a及該頂面131b,且該連結層140接觸該第一承載部121之該表面121b,以使各該線路131被包覆於該第一承載部121與該連結層140所構成的空間中,以防止該些線路131氧化,在本實施例中,該連結層140之材質為錫銅合金。Referring to FIGS. 1 and 13, in the present embodiment, after etching the lines 131 (step 18), a "forming layer" step 19 is further included, and in the "forming the layer" step 19, a joint layer is formed. In the line 131, the connecting layer 140 covers the third outer ring surface 131a and the top surface 131b of the line 131, and the connecting layer 140 contacts the surface 121b of the first carrying portion 121 so that each The line 131 is covered in the space formed by the first carrying portion 121 and the connecting layer 140 to prevent oxidation of the lines 131. In the embodiment, the connecting layer 140 is made of tin-copper alloy.

請參閱第13圖,覆蓋該第三外環面131a的該連結層140具有一第四外環面141,該第四外環面141與該縱向延伸線L之間具有一第二水平距離D2,其中,該第二水平距離D2為該第四外環面141與該縱向延伸線L之最短距離,在本實施例中,該第二水平距離D2大於該第一水平距離D1,以避免累積於該側蝕槽S的水氣經由該結合層120滲透至該線路層130中而產生短路現象,較佳地,該第二水平距離D2與該第一水平距離D1之差值介於28-158 nm。Referring to FIG. 13, the connecting layer 140 covering the third outer annular surface 131a has a fourth outer annular surface 141 having a second horizontal distance D2 between the fourth outer annular surface 141 and the longitudinally extending line L. The second horizontal distance D2 is the shortest distance between the fourth outer annular surface 141 and the longitudinal extension line L. In this embodiment, the second horizontal distance D2 is greater than the first horizontal distance D1 to avoid accumulation. The water vapor in the side etching groove S penetrates into the circuit layer 130 via the bonding layer 120 to generate a short circuit phenomenon. Preferably, the difference between the second horizontal distance D2 and the first horizontal distance D1 is between 28 and 158 nm.

請參閱第14圖,本發明之該線路基板100’藉由一接著劑300(例如:非導電膠、導電膠等填充膠)與一玻璃基板400進行封裝,在本實施例中,該接著劑300為異方性導電膠(ACF),因此該接著劑300可接合該線路基板100’及該玻璃基板400,並且電性連接該線路基板100’之該些線路131及該玻璃基板400之電極(圖未繪出),由於該接著劑300的附著力影響封裝結構的可靠度,因此本發明藉由圖案化該底板110以移除顯露的該混合層113,避免該混合層113吸附雜質而影響該接著劑300與該線路基板100’之間的接合強度,此外,本發明藉由等向性蝕刻所產生的該側蝕槽S係用以容置該接著劑300,可進一步提高該接著劑300的附著力。Referring to FIG. 14, the circuit substrate 100' of the present invention is packaged with a glass substrate 400 by an adhesive 300 (for example, a non-conductive adhesive or a conductive adhesive). In this embodiment, the adhesive is used. 300 is an anisotropic conductive adhesive (ACF), so the adhesive 300 can bond the circuit substrate 100' and the glass substrate 400, and electrically connect the lines 131 of the circuit substrate 100' and the electrodes of the glass substrate 400. (Unillustrated), since the adhesion of the adhesive 300 affects the reliability of the package structure, the present invention avoids the adsorption of the mixed layer 113 by patterning the bottom plate 110 to remove the exposed mixed layer 113. The bonding strength between the adhesive 300 and the circuit substrate 100' is affected. In addition, the side etching groove S generated by the isotropic etching of the present invention is used to accommodate the adhesive 300, which can further improve the bonding. The adhesion of the agent 300.

本發明之保護範圍當視後附之申請專利範圍所界定者為準,任何熟知此項技藝者,在不脫離本發明之精神和範圍內所作之任何變化與修改,均屬於本發明之保護範圍。The scope of the present invention is defined by the scope of the appended claims, and any changes and modifications made by those skilled in the art without departing from the spirit and scope of the invention are within the scope of the present invention. .

10‧‧‧線路基板圖案化製程
11‧‧‧提供待圖案化線路基板
12‧‧‧形成光阻層
13‧‧‧圖案化光阻層
14‧‧‧圖案化線路層
15‧‧‧移除光阻層
16‧‧‧圖案化結合層
17‧‧‧圖案化底板
18‧‧‧蝕刻線路
19‧‧‧形成連結層
100‧‧‧待圖案化線路基板
100’‧‧‧線路基板
110‧‧‧底板
110’‧‧‧圖案化底板
110a‧‧‧待活化區
111‧‧‧活化層
112‧‧‧未活化層
113‧‧‧混合層
114‧‧‧第二承載部
114a‧‧‧第二外環面
115‧‧‧第三槽
120‧‧‧結合層
121‧‧‧第一承載部
121a‧‧‧第一外環面
121b‧‧‧表面
122‧‧‧第二槽
130‧‧‧線路層
131‧‧‧線路
131a‧‧‧第三外環面
131b‧‧‧頂面
132‧‧‧第一槽
140‧‧‧連結層
141‧‧‧第四外環面
200‧‧‧光阻層
210‧‧‧開口
300‧‧‧接著劑
400‧‧‧玻璃基板
D1‧‧‧第一水平距離
D2‧‧‧第二水平距離
L‧‧‧縱向延伸線
S‧‧‧側蝕槽
10‧‧‧Line substrate patterning process
11‧‧‧Providing circuit board to be patterned
12‧‧‧Forming a photoresist layer
13‧‧‧ patterned photoresist layer
14‧‧‧ patterned circuit layer
15‧‧‧Removing the photoresist layer
16‧‧‧patterned bonding layer
17‧‧‧ patterned bottom plate
18‧‧‧ Etched lines
19‧‧‧ forming a tie layer
100‧‧‧ patterned circuit board
100'‧‧‧Line substrate
110‧‧‧floor
110'‧‧‧ patterned bottom plate
110a‧‧‧Activated area
111‧‧‧Active layer
112‧‧‧Unactivated layer
113‧‧‧ mixed layer
114‧‧‧Second load bearing department
114a‧‧‧Second outer annulus
115‧‧‧ third slot
120‧‧‧bonding layer
121‧‧‧First load bearing department
121a‧‧‧First outer annulus
121b‧‧‧ surface
122‧‧‧second trough
130‧‧‧Line layer
131‧‧‧ lines
131a‧‧‧ Third outer annulus
131b‧‧‧ top surface
132‧‧‧first slot
140‧‧‧Linking layer
141‧‧‧Fourth outer annulus
200‧‧‧ photoresist layer
210‧‧‧ openings
300‧‧‧Binder
400‧‧‧ glass substrate
D1‧‧‧first horizontal distance
D2‧‧‧Second horizontal distance
L‧‧‧ longitudinal extension line
S‧‧‧Surface

第1圖:依據本發明之一實施例,一種線路基板圖案化製程之流程圖。 第2至13圖:依據本發明之一實施例,一種線路基板圖案化製程之示意圖。 第14圖:依據本發明之一實施例,一線路基板與一玻璃基板之接合示意圖。FIG. 1 is a flow chart showing a circuit board patterning process according to an embodiment of the invention. 2 to 13 are views showing a circuit board patterning process according to an embodiment of the present invention. Figure 14 is a schematic view showing the bonding of a circuit substrate and a glass substrate in accordance with an embodiment of the present invention.

100’‧‧‧線路基板 100'‧‧‧ circuit substrate

110’‧‧‧圖案化底板 110’‧‧‧ patterned bottom plate

112‧‧‧未活化層 112‧‧‧Unactivated layer

114‧‧‧第二承載部 114‧‧‧Second load bearing department

114a‧‧‧第二外環面 114a‧‧‧Second outer annulus

115‧‧‧第三槽 115‧‧‧ third slot

121‧‧‧第一承載部 121‧‧‧First load bearing department

121a‧‧‧第一外環面 121a‧‧‧First outer annulus

131‧‧‧線路 131‧‧‧ lines

D1‧‧‧第一水平距離 D1‧‧‧first horizontal distance

L‧‧‧縱向延伸線 L‧‧‧ longitudinal extension line

S‧‧‧側蝕槽 S‧‧‧Surface

Claims (15)

一種線路基板圖案化製程,其包含: 提供一待圖案化線路基板,該待圖案化線路基板具有一底板、一結合層及一線路層,該結合層位於該底板及該線路層之間,該底板具有一活化層及一未活化層,該底板經由一活化處理而形成該活化層,部份的該結合層嵌入該活化層中,使得嵌有該結合層的該活化層形成為一混合層; 形成一光阻層,該光阻層罩蓋該線路層; 圖案化該光阻層,以形成複數個開口,該些開口顯露該線路層; 圖案化該線路層,以該光阻層為遮罩,移除被該些開口顯露的該線路層,使該線路層形成複數個線路,相鄰的兩個該線路之間具有一第一槽,該第一槽顯露該結合層; 移除該光阻層; 圖案化該結合層,以該些線路為遮罩,移除被該些第一槽顯露且未嵌入該活化層的該結合層,使位於該些線路下方的該結合層形成複數個第一承載部,相鄰的兩個該第一承載部之間具有一第二槽,該第二槽顯露該混合層;以及 圖案化該底板,以該些第一承載部為遮罩,移除被該些第二槽顯露的該混合層,使位於該些第一承載部下方的該混合層形成複數個第二承載部,相鄰的兩個該第二承載部之間具有一第三槽,該第三槽顯露該未活化層。A circuit substrate patterning process includes: providing a circuit substrate to be patterned, the circuit substrate to be patterned having a bottom plate, a bonding layer and a circuit layer, the bonding layer being located between the bottom plate and the circuit layer, The bottom plate has an activation layer and an unactivated layer, the bottom plate is formed by an activation treatment, and a part of the bonding layer is embedded in the activation layer, so that the activation layer embedded with the bonding layer is formed as a mixed layer. Forming a photoresist layer, the photoresist layer covering the circuit layer; patterning the photoresist layer to form a plurality of openings, the openings revealing the circuit layer; patterning the circuit layer, wherein the photoresist layer is Masking, removing the circuit layer exposed by the openings, forming a plurality of lines in the circuit layer, and having a first groove between the two adjacent lines, the first groove revealing the bonding layer; The photoresist layer is patterned, and the lines are masked to remove the bonding layer exposed by the first grooves and not embedded in the active layer, so that the bonding layer under the lines is formed Multiple first load-bearing parts Between the two adjacent first bearing portions, a second groove is formed, the second groove reveals the mixed layer; and the bottom plate is patterned, and the first bearing portions are masked, and the The mixed layer exposed by the two slots forms a plurality of second carrying portions of the mixed layer located under the first carrying portions, and a third slot between the adjacent two of the second carrying portions, the third The groove reveals the unactivated layer. 如申請專利範圍第1項所述之線路基板圖案化製程,其中各該第一承載部具有一第一外環面,各該第二承載部具有一第二外環面,該第二外環面與沿著該第一外環面的一縱向延伸線之間形成一側蝕槽,該側蝕槽位於該第一承載部下方且連通該第三槽,該第二外環面與該縱向延伸線之間具有一第一水平距離。The circuit substrate patterning process of claim 1, wherein each of the first bearing portions has a first outer ring surface, and each of the second bearing portions has a second outer ring surface, the second outer ring Forming a side etching groove between the surface and a longitudinally extending line along the first outer annular surface, the side etching groove is located below the first bearing portion and communicates with the third groove, the second outer annular surface and the longitudinal direction There is a first horizontal distance between the extension lines. 如申請專利範圍第2項所述之線路基板圖案化製程,其中於圖案化該底板後,蝕刻該些線路,使得該第一槽擴大,以顯露出該第一承載部之一表面。The circuit substrate patterning process of claim 2, wherein after patterning the substrate, the lines are etched such that the first groove is enlarged to expose a surface of the first carrier. 如申請專利範圍第3項所述之線路基板圖案化製程,其中於蝕刻該些線路後,形成一連結層於各該線路,蝕刻後的各該線路具有一第三外環面及一頂面,該連結層覆蓋該第三外環面及該頂面,且該連結層接觸該第一承載部之該表面,以使各該線路被包覆於該第一承載部與該連結層所構成的空間中。The circuit substrate patterning process of claim 3, wherein after etching the lines, a bonding layer is formed on each of the lines, and each of the etched lines has a third outer ring surface and a top surface. The connecting layer covers the third outer ring surface and the top surface, and the connecting layer contacts the surface of the first bearing portion, so that each line is covered by the first bearing portion and the connecting layer In the space. 如申請專利範圍第4項所述之線路基板圖案化製程,其中覆蓋該第三外環面的該連結層具有一第四外環面,該第四外環面與該縱向延伸線之間具有一第二水平距離。The circuit substrate patterning process of claim 4, wherein the bonding layer covering the third outer annular surface has a fourth outer annular surface, and the fourth outer annular surface and the longitudinally extending line have A second horizontal distance. 如申請專利範圍第5項所述之線路基板圖案化製程,其中該第二水平距離大於該第一水平距離。The circuit substrate patterning process of claim 5, wherein the second horizontal distance is greater than the first horizontal distance. 如申請專利範圍第6項所述之線路基板圖案化製程,其中該第二水平距離與該第一水平距離之差值介於28-158 nm。The circuit substrate patterning process of claim 6, wherein the difference between the second horizontal distance and the first horizontal distance is between 28 and 158 nm. 如申請專利範圍第1項所述之線路基板圖案化製程,其中該活化處理係以電漿活化該底板之一待活化區,使該待活化區形成該活化層。The circuit substrate patterning process of claim 1, wherein the activation treatment activates a region to be activated of the substrate by plasma, so that the activation region forms the activation layer. 如申請專利範圍第1或8項所述之線路基板圖案化製程,其中該結合層係經由濺鍍複數個金屬粒子於該活化層所形成,且部份的該些金屬粒子嵌入該活化層中,以形成該混合層。The circuit substrate patterning process of claim 1 or 8, wherein the bonding layer is formed by sputtering a plurality of metal particles on the active layer, and a portion of the metal particles are embedded in the active layer. To form the mixed layer. 一種線路基板,包含一圖案化底板、複數個第一承載部及複數個線路,該些第一承載部位於該圖案化底板及該些線路之間,且該些線路設置於該些第一承載部上,其特徵在於該圖案化底板具有複數個第二承載部及一未活化層,該些第二承載部位於該些第一承載部與該未活化層之間,且該些第二承載部形成於該未活化層上,該些第二承載部是由圖案化一底板之一混合層所形成,其中該混合層是由該底板之一活化層與部分嵌入該活化層之一結合層所形成,相鄰的兩個該第二承載部之間具有一槽,該槽顯露該未活化層。A circuit substrate includes a patterned backplane, a plurality of first carrying portions, and a plurality of lines, the first carrying portions are located between the patterned backplane and the lines, and the lines are disposed on the first carriers And a plurality of second carrying portions and an unactivated layer, the second carrying portions are located between the first carrying portions and the unactivated layer, and the second carrying portions are Formed on the unactivated layer, the second load-bearing portions are formed by a mixed layer of one of the patterned bottom plates, wherein the mixed layer is formed by one of the active layer of the bottom plate and a layer partially embedded in the active layer Formed, there is a groove between the two adjacent second bearing portions, the groove revealing the unactivated layer. 如申請專利範圍第10項所述之線路基板,其中各該第一承載部具有一第一外環面,各該第二承載部具有一第二外環面,該第二外環面與沿著該第一外環面的一縱向延伸線之間形成一側蝕槽,該側蝕槽位於該第一承載部下方且連通該槽,該第二外環面與該縱向延伸線之間具有一第一水平距離。The circuit substrate of claim 10, wherein each of the first bearing portions has a first outer annular surface, and each of the second bearing portions has a second outer annular surface, the second outer annular surface and the edge A side etching groove is formed between a longitudinally extending line of the first outer annular surface, the side etching groove is located below the first bearing portion and communicates with the groove, and the second outer annular surface and the longitudinally extending line have A first horizontal distance. 如申請專利範圍第11項所述之線路基板,其另包含一連結層,該連結層形成於各該線路,各該線路具有一第三外環面及一頂面,該連結層覆蓋該第三外環面及該頂面,且該連結層接觸該第一承載部之一表面,以使各該線路被包覆於該第一承載部與該連結層所構成的空間中。The circuit board of claim 11, further comprising a connecting layer formed on each of the lines, each of the lines having a third outer ring surface and a top surface, the connecting layer covering the first a third outer ring surface and the top surface, and the connecting layer contacts a surface of the first bearing portion such that each of the wires is wrapped in a space formed by the first bearing portion and the connecting layer. 如申請專利範圍第12項所述之線路基板,其中覆蓋該第三外環面的該連結層具有一第四外環面,該第四外環面與該縱向延伸線之間具有一第二水平距離。The circuit substrate of claim 12, wherein the connecting layer covering the third outer annular surface has a fourth outer annular surface, and the fourth outer annular surface and the longitudinally extending line have a second Horizontal distance. 如申請專利範圍第13項所述之線路基板,其中該第二水平距離大於該第一水平距離。The circuit substrate of claim 13, wherein the second horizontal distance is greater than the first horizontal distance. 如申請專利範圍第14項所述之線路基板,其中該第二水平距離與該第一水平距離之差值介於28-158 nm。The circuit substrate of claim 14, wherein the difference between the second horizontal distance and the first horizontal distance is between 28 and 158 nm.
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