TW201733773A - Imprint device, imprint method, and method for manufacturing article - Google Patents
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- TW201733773A TW201733773A TW105138895A TW105138895A TW201733773A TW 201733773 A TW201733773 A TW 201733773A TW 105138895 A TW105138895 A TW 105138895A TW 105138895 A TW105138895 A TW 105138895A TW 201733773 A TW201733773 A TW 201733773A
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/7035—Proximity or contact printers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
- B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
- B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
- B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
- G03F7/70516—Calibration of components of the microlithographic apparatus, e.g. light sources, addressable masks or detectors
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70653—Metrology techniques
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/706835—Metrology information management or control
- G03F7/706837—Data analysis, e.g. filtering, weighting, flyer removal, fingerprints or root cause analysis
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
- H01L21/0274—Photolithographic processes
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Data Mining & Analysis (AREA)
- Mechanical Engineering (AREA)
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
Description
本發明係關於壓印裝置、壓印方法、及物品的製造方法。 The present invention relates to an imprint apparatus, an imprint method, and a method of manufacturing an article.
在用來製造半導體零件等的基板上形成微細圖形的裝置,已知有壓印裝置。壓印裝置,係用來將供給至基板上的壓印材(例如光硬化性組成物)與模具接觸,並對壓印材賦予硬化用能量,藉此形成將模具之凹凸圖形轉印過的硬化物圖形之裝置。 An imprint apparatus is known as an apparatus for forming a fine pattern on a substrate for manufacturing a semiconductor component or the like. The imprint apparatus is for contacting an imprint material (for example, a photocurable composition) supplied onto a substrate with a mold, and imparting energy for hardening to the imprint material, thereby forming a hardened material for transferring the uneven pattern of the mold. Graphic device.
專利文獻1,揭示有一種補正方法,係用來補正:在吐出壓印材之複數個吐出口的配列方向與矩形之被處理區域的短邊方向,兩者成為繞鉛直方向之旋轉方向傾斜的情況所產生之供給壓印材的位置目標從供給位置偏離的情況。 Patent Document 1 discloses a correction method for correcting a direction in which a plurality of discharge ports of a discharge material are discharged and a short side direction of a rectangular processed region, and both are inclined in a direction of rotation in a vertical direction. The resulting positional target of the supply of the imprinted material is deviated from the supply position.
具體而言,係揭示出:測量複數個吐出口的配列方向與矩形之被處理區域之短邊方向之間旋轉方向的角度,並根據該旋轉角度,補正吐出壓印材的時間點或平台的移動方向。 Specifically, it is disclosed that an angle of a rotation direction between a plurality of discharge ports and a short direction of a rectangular processed region is measured, and a time point of the discharge of the imprint material or a movement of the platform is corrected according to the rotation angle. direction.
[專利文獻1]日本特開2012-69758號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2012-69758
一般來說,在一邊移動基板一邊以吐出手段吐出壓印材的情況,會考慮既定的滯空時間來決定吐出時間點。 In general, when the substrate is moved while the substrate is being moved, the discharge material is discharged by the discharge means, and the predetermined time of the discharge is determined in consideration of the predetermined time lag.
但是,因基板的彎曲或基板的厚度分布而經常導致吐出口與基板之間的距離有著不均,因應該吐出口與基板之間的距離差異,會有壓印材從吐出到供給至基板上為止的滯空時間出現偏差之虞。 However, due to the bending of the substrate or the thickness distribution of the substrate, the distance between the discharge port and the substrate is often uneven, and the distance between the discharge port and the substrate is different, and the imprint material is discharged from the discharge to the substrate. There is a discrepancy in the time of the air gap.
該既定的滯空時間與實際的滯空時間出現偏差,會導致壓印材的供給位置從目標位置偏移。 The predetermined lag time deviates from the actual stagnation time, which causes the supply position of the embossed material to be offset from the target position.
專利文獻1雖有記載旋轉角度的補正,但並未揭示出吐出口與基板之間距離有不均之情況的供給位置補正方法。 Patent Document 1 describes a correction of the rotation angle, but does not disclose a supply position correction method in which the distance between the discharge port and the substrate is uneven.
因此,專利文獻1的壓印裝置中,會因吐出口與基板之間的距離不均,而導致壓印材的供給位置偏移,有難以精度良好地形成圖形之虞。 Therefore, in the imprint apparatus of Patent Document 1, the distance between the discharge port and the substrate is uneven, and the supply position of the imprint material is shifted, which makes it difficult to form a pattern with high precision.
本發明係有鑑於上述課題而完成者,其目的 在於提供可精度良好地供給壓印材的壓印裝置、壓印方法。 The present invention has been made in view of the above problems, and its object It is to provide an imprint apparatus and an imprint method which can supply an imprint material with high precision.
本發明,係使用模具在基板上形成壓印材之圖形的壓印裝置,其特徵為,具有:供給手段,其含有吐出口,且從前述吐出口吐出前述壓印材並對前述基板供給前述壓印材;及測量手段,係測量關於前述基板表面之高度方向的位置資訊,前述供給手段,係根據由前述測量手段的測量結果所得到之相關前述吐出口與前述基板之間距離的分布資訊,來供給前述壓印材。 The present invention relates to an imprint apparatus for forming a pattern of an imprint material on a substrate by using a mold, comprising: a supply means including a discharge port, and discharging the imprint material from the discharge port and supplying the imprint material to the substrate And measuring means for measuring position information on a height direction of the surface of the substrate, wherein the supply means supplies the distribution information of the distance between the discharge port and the substrate obtained by the measurement result of the measuring means. The aforementioned imprinted material.
100‧‧‧壓印裝置 100‧‧‧ Imprinting device
101‧‧‧基板 101‧‧‧Substrate
102‧‧‧壓印材 102‧‧‧imprinted materials
103‧‧‧模具 103‧‧‧Mold
115‧‧‧吐出手段(供給手段) 115‧‧‧ spitting means (supply means)
116a‧‧‧吐出口 116a‧‧‧Export
122‧‧‧控制部(決定手段、補正手段) 122‧‧‧Control Department (decision means, means of correction)
126‧‧‧測量部(測量手段) 126‧‧‧Measurement Department (measurement means)
圖1為表示關於實施形態之壓印裝置之構造的圖。 Fig. 1 is a view showing the structure of an imprint apparatus according to an embodiment.
圖2為表示吐出手段之構造的圖。 Fig. 2 is a view showing the structure of a discharge means.
圖3為表示關於第1實施形態之壓印方法的流程圖。 Fig. 3 is a flow chart showing the imprint method of the first embodiment.
圖4為針對基板表面的高度方向位置進行說明的圖。 4 is a view for explaining a position in a height direction of a surface of a substrate.
圖5為表示吐出口與基板的距離為一定之情況之壓印材供給位置的圖。 Fig. 5 is a view showing a position at which the imprint material is supplied when the distance between the discharge port and the substrate is constant.
圖6為表示吐出口與基板的距離為非一定之情況之壓印材供給位置的圖。 Fig. 6 is a view showing a position at which the imprint material is supplied in a case where the distance between the discharge port and the substrate is not constant.
圖7為說明第1實施形態之供給條件之補正方法的圖。 Fig. 7 is a view for explaining a method of correcting supply conditions in the first embodiment;
圖8為表示第1實施形態之供給條件之補正方法的圖。 Fig. 8 is a view showing a method of correcting supply conditions in the first embodiment;
圖9為針對基準面進行說明的圖。 Fig. 9 is a view for explaining a reference plane.
圖10為說明關於第5實施形態之測量方法的圖。 Fig. 10 is a view for explaining a measuring method according to a fifth embodiment;
圖11為表示關於第5實施形態之攝影結果的圖。 Fig. 11 is a view showing the result of photography in the fifth embodiment.
圖1為表示關於實施形態之壓印裝置100之構造的圖。圖1中,鉛直方向(高度方向)為Z軸。此外,在垂直於該Z軸的平面內(與高度方向交差的平面內)將互相正交的2軸作為X軸及Y軸。在XY平面內之X軸方向及Y軸方向的位置分量以(X,Y)表示。 Fig. 1 is a view showing the structure of an imprint apparatus 100 according to an embodiment. In Fig. 1, the vertical direction (height direction) is the Z axis. Further, two axes orthogonal to each other are defined as an X-axis and a Y-axis in a plane perpendicular to the Z-axis (in a plane intersecting the height direction). The positional components in the X-axis direction and the Y-axis direction in the XY plane are represented by (X, Y).
本實施形態中,壓印材102係光硬化性的材料。 In the present embodiment, the imprint material 102 is a photocurable material.
照射部104係對基板101照射紫外線105,使非硬化狀態的壓印材102予以硬化。模子103的材料,係石英等之讓紫外線105穿透的材料。照射部104係具有:射出紫外線105的光源106、以及將紫外線105的光路往基板101的方向折曲的鏡子107。 The illuminating unit 104 irradiates the substrate 101 with the ultraviolet ray 105 to cure the imprinted material 102 in the non-hardened state. The material of the mold 103 is a material such as quartz which allows the ultraviolet rays 105 to penetrate. The illuminating unit 104 includes a light source 106 that emits the ultraviolet ray 105 and a mirror 107 that bends the optical path of the ultraviolet ray 105 toward the direction of the substrate 101.
模子103的外周為矩形,在其中心部具有形成有凹凸圖形之矩形的圖形部103a。於基板101上複數 形成有:與圖形部103a幾乎相同大小的被處理區域亦即圖形區域120。 The outer periphery of the mold 103 has a rectangular shape, and has a rectangular pattern portion 103a in which a concave-convex pattern is formed at a central portion thereof. Multiple on the substrate 101 A pattern area 120 which is a processing area which is almost the same size as the pattern portion 103a is formed.
在壓印裝置100,進行使壓印材102與模子103接觸的動作(以下稱為壓模動作)。此外,在使壓印材102與模子103接觸的狀態,使壓印材102硬化而在基板101上形成圖形。 In the imprint apparatus 100, an operation of bringing the imprint material 102 into contact with the mold 103 (hereinafter referred to as a stamper operation) is performed. Further, in a state where the imprint material 102 is brought into contact with the mold 103, the imprint material 102 is cured to form a pattern on the substrate 101.
於基板101形成有複數個圖形區域120,壓印裝置100係以1次的壓模動作來在1個圖形區域120上形成有圖形部103a的轉印圖形。 A plurality of pattern regions 120 are formed on the substrate 101, and the imprint apparatus 100 forms a transfer pattern of the pattern portion 103a on one pattern region 120 by a single stamper operation.
1個圖形區域120,係相當於1個或複數個短區域。短區域係指已經形成有圖形的基底層之單位區域,藉由分隔線(未圖示)而被分隔形成。 One graphic area 120 corresponds to one or a plurality of short areas. The short area refers to a unit area of the base layer on which the pattern has been formed, and is formed by separation lines (not shown).
1個短區域,係例如為26mm×33mm左右的尺寸。於1個短區域,可將使用者所期望之晶片尺寸的圖形予以形成1個或複數個。 One short area is, for example, a size of about 26 mm × 33 mm. In one short area, one or a plurality of patterns of the wafer size desired by the user can be formed.
吸盤108,係藉由真空吸附力或靜電力來保持模子103。驅動機構109,係使吸盤108與模子103沿著Z軸方向來移動。為了使紫外線105到達基板101,吸盤108及驅動機構109係在中央部具有開口區域110。在模子103的壓模動作及分離壓印材102與模子103的分離動作(以下稱為離模動作)之際,使模子103移動。 The chuck 108 holds the mold 103 by vacuum suction or electrostatic force. The drive mechanism 109 moves the chuck 108 and the mold 103 in the Z-axis direction. In order to allow the ultraviolet ray 105 to reach the substrate 101, the chuck 108 and the drive mechanism 109 have an opening region 110 at the center portion. The mold 103 is moved during the press operation of the mold 103 and the separation operation of the mold 102 and the mold 103 (hereinafter referred to as the mold release operation).
壓印裝置100,係具有使基板101與吐出口116a相對移動的移動手段亦即基板平台(移動手段)111。基板平台111,係具有吸盤112a與驅動機構112b, 依據來自後述之控制部122的指示來定位基板101。吸盤112a,係藉由真空吸附力或靜電力來保持基板101。驅動機構112b,係以藉由吸盤112a保持著基板101的狀態而沿著XY平面內移動。在基板101的位置測量中所使用者,係設在驅動機構112b上。驅動機構112b,係例如氣壓缸或壓電致動器等。 The imprint apparatus 100 is a substrate platform (moving means) 111 which is a moving means for relatively moving the substrate 101 and the discharge port 116a. The substrate platform 111 has a suction cup 112a and a driving mechanism 112b. The substrate 101 is positioned in accordance with an instruction from a control unit 122 to be described later. The chuck 112a holds the substrate 101 by vacuum suction or electrostatic force. The drive mechanism 112b moves in the XY plane while the substrate 101 is held by the suction pad 112a. The user in the position measurement of the substrate 101 is provided on the drive mechanism 112b. The drive mechanism 112b is, for example, a pneumatic cylinder or a piezoelectric actuator.
驅動機構109及驅動機構112b,亦可由粗調驅動系統或微動驅動系統等之複數個驅動系統所構成。且,驅動機構109,係不只是朝Z軸方向,而是亦朝X軸方向、Y軸方向、及繞各軸旋轉方向來移動模子103的機構亦可。驅動機構112b,係不只是朝X軸方向及Y軸方向,而是亦朝其他軸方向、及繞各軸周的旋轉方向來移動基板101的機構亦可。壓模動作及離模動作,只要使模子103及基板101之中的至少一方往Z軸方向移動來進行即可。 The drive mechanism 109 and the drive mechanism 112b may be constituted by a plurality of drive systems such as a coarse drive system or a micro drive system. Further, the drive mechanism 109 may be a mechanism that moves the mold 103 in the X-axis direction, the Y-axis direction, and the rotation direction of each axis, not only in the Z-axis direction. The drive mechanism 112b may be a mechanism that moves the substrate 101 not only in the X-axis direction but also in the Y-axis direction, but also in other axial directions and in the rotation direction around each of the shafts. The stamper operation and the mold release operation may be performed by moving at least one of the mold 103 and the substrate 101 in the Z-axis direction.
於模子103的上方配置有透過構件113,藉此在開口區域110內設置可調整壓力的空間114。使圖形部103a接觸壓印材102之際,將圖形部103a往基板101的方向撓曲成凸形狀。藉此,可防止模子103與壓印材102之間混入氣泡,使壓印材102充填至圖形部103a的各個角落。 A transmissive member 113 is disposed above the mold 103, whereby a space 114 in which pressure can be adjusted is provided in the opening region 110. When the pattern portion 103a is brought into contact with the imprint material 102, the pattern portion 103a is bent into a convex shape in the direction of the substrate 101. Thereby, air bubbles can be prevented from being mixed between the mold 103 and the imprinted material 102, and the imprinted material 102 can be filled to each corner of the pattern portion 103a.
圖2係從-Z方向觀看吐出手段(供給手段)115的圖。沿著Y軸方向配列有複數個噴嘴116。吐出手段115,係含有噴嘴116的吐出口(供給口)116a,在基 板平台111使基板101於既定方向(本實施形態中為-X方向)移動的期間從吐出口116a吐出壓印材102。吐出手段115,係以1次的供給動作來吐出1個圖形區域110份量的壓印材102。被固定配置的吐出手段115,係以既定的時間間隔每次以既定量來吐出壓印材102。藉此,將壓印材102供給至基板101上的圖形區域120。 Fig. 2 is a view showing the discharge means (supply means) 115 viewed from the -Z direction. A plurality of nozzles 116 are arranged along the Y-axis direction. The discharge means 115 is a discharge port (supply port) 116a including a nozzle 116. The plate stage 111 discharges the platen 102 from the discharge port 116a while the substrate 101 is moved in a predetermined direction (the -X direction in the present embodiment). The discharge means 115 discharges 110 parts of the imprint material 102 in one pattern area by one supply operation. The discharge means 115 that is fixedly disposed discharges the imprint material 102 by a predetermined amount at a predetermined time interval. Thereby, the imprint material 102 is supplied to the pattern area 120 on the substrate 101.
噴嘴116係具有作為吐出機構的壓電元件(未圖示),利用壓電效果來擠出壓印材102。施加於壓電元件的電壓波形(以下稱為驅動波形),或是配合該驅動波形來施加電壓的時間點,係由後述的控制部122所指示。又,由吐出手段115所吐出的壓印材102,係未硬化前的壓印材102。 The nozzle 116 has a piezoelectric element (not shown) as a discharge mechanism, and the piezoelectric material 102 is extruded by a piezoelectric effect. The voltage waveform applied to the piezoelectric element (hereinafter referred to as a driving waveform) or the time at which the voltage is applied in accordance with the driving waveform is instructed by a control unit 122 to be described later. Moreover, the imprint material 102 discharged by the discharge means 115 is the imprint material 102 before hardening.
本實施形態及後續的實施形態中,吐出速度,係相當於將壓印材102在滯空中之速度的積分值,除以滯空時間△t的值。這是為了補正由吐出手段115所賦予的初速度與受到空氣阻抗而減速並到達基板101之前的速度之間的偏差,將落下中之壓印材102的速度假定為等速。 In the present embodiment and the subsequent embodiments, the discharge speed corresponds to the integral value of the speed of the imprinted material 102 in the air stagnation, and is divided by the value of the stagnation time Δt. This is to correct the deviation between the initial velocity given by the discharge means 115 and the speed before decelerating by the air impedance and reaching the substrate 101, and the speed of the imprinted material 102 in the drop is assumed to be the constant velocity.
測量部117,係從模子103的上方拍攝基板101,並測量形成於圖形部103a之複數個標記118與形成於圖形區域120之複數個標記119之間相對位置的偏差。 The measuring unit 117 photographs the substrate 101 from above the mold 103, and measures the deviation of the relative positions between the plurality of marks 118 formed on the pattern portion 103a and the plurality of marks 119 formed in the pattern region 120.
攝影部121,係使穿透模子103的光朝向基板101照射,並以CCD等之攝影元件接受來自基板101的反射光,藉此拍攝模子103與壓印材102的接觸狀態。攝影 部121亦可僅具有攝影功能,並使照射於基板101的光為由與攝影部121不同的光源(未圖示)來照射。觀察按壓動作中之壓印材102的擴展,藉此拍攝出在圖形部103a與基板101之間的雜質混入,或是壓印材102充填於圖形部103a的情況。 The photographing unit 121 irradiates the light passing through the mold 103 toward the substrate 101, and receives the reflected light from the substrate 101 by an image pickup element such as a CCD, thereby photographing the contact state between the mold 103 and the imprint material 102. photography The portion 121 may have only a photographing function, and the light irradiated on the substrate 101 may be irradiated with a light source (not shown) different from the photographing portion 121. The expansion of the imprint material 102 in the pressing operation is observed, whereby the contamination between the pattern portion 103a and the substrate 101 is captured, or the imprint material 102 is filled in the pattern portion 103a.
測量部126,係測量測量部126與基板101之表面的各位置之間的距離。亦即,測量關於基板101表面之Z軸方向的位置資訊(關於基板表面之高度方向的位置資訊)。Z軸方向的位置,以下稱之為Z位置。本實施形態中,測量部126係測量基板101表面之Z軸方向的位置。 The measuring unit 126 measures the distance between the measuring unit 126 and each position of the surface of the substrate 101. That is, positional information on the Z-axis direction of the surface of the substrate 101 (position information on the height direction of the substrate surface) is measured. The position in the Z-axis direction is hereinafter referred to as the Z position. In the present embodiment, the measuring unit 126 measures the position of the surface of the substrate 101 in the Z-axis direction.
測量部126,係例如為雷射干涉儀,或是對基板傾斜射入光並檢測出反射光之斜射方式的高度測量器等。測量部126,亦可為靜電容量感測器或編碼器等之其他測量器。為了可同時測量複數點,亦可含有複數個測量部。測量部126與基板101的距離,係用來讓控制部122算出吐出口116a與基板101的距離。 The measuring unit 126 is, for example, a laser interferometer or a height measuring device that obliquely injects light onto the substrate and detects an oblique manner of the reflected light. The measuring unit 126 may be another measuring device such as a capacitance sensor or an encoder. In order to measure the complex point at the same time, a plurality of measuring sections may be included. The distance between the measuring unit 126 and the substrate 101 is used to cause the control unit 122 to calculate the distance between the discharge port 116a and the substrate 101.
控制部(決定手段、補正手段)122具有CPU、RAM、ROM,且透過線路來連接照射部104、驅動機構109、基板平台111、吐出手段115、測量部117、攝影部121及記憶部123。統整控制該等,並依據後述圖3之流程圖所示的程式來實行壓印處理。 The control unit (determination means, correction means) 122 includes a CPU, a RAM, and a ROM, and the irradiation unit 104, the drive mechanism 109, the substrate stage 111, the discharge means 115, the measurement unit 117, the imaging unit 121, and the storage unit 123 are connected via a line. This control is integrated, and the imprint process is performed in accordance with the program shown in the flowchart of FIG. 3 which will be described later.
控制部122,係發揮作為決定手段的功能,根據測量部126的測量結果,來決定關於吐出口116a與基 板101之間距離的分布資訊。 The control unit 122 functions as a determination means, and determines the discharge port 116a and the base based on the measurement result of the measurement unit 126. Distribution information of the distance between the plates 101.
此外,控制部122,係發揮作為補正手段的功能,根據由控制部122所決定之關於吐出口116a與基板101之間的距離資訊,來補正(調整)壓印材102對基板101的供給條件。 Further, the control unit 122 functions as a correction means, and corrects (adjusts) the supply conditions of the imprint material 102 to the substrate 101 based on the distance information between the discharge port 116a and the substrate 101 determined by the control unit 122.
該補正,係補正使供給至基板101上之壓印材102的供給位置成為接近理想的供給位置。供給條件,係在對基板101上供給壓印材102時之基板平台111的移動速度、來自吐出口116a之壓印材102的吐出速度、及來自吐出口116a之壓印材102的吐出時間點的至少一個。 This correction corrects the supply position of the imprint material 102 supplied onto the substrate 101 to an ideal supply position. The supply condition is at least one of a moving speed of the substrate stage 111 when the imprint material 102 is supplied onto the substrate 101, a discharge speed of the imprint material 102 from the discharge port 116a, and a discharge time point of the imprint material 102 from the discharge port 116a. .
記憶部123,係可藉由控制部122來讀取的硬碟(記憶媒體)等所構成。圖3之流程圖所示的程式,係記憶著測量部126與吐出手段115之各自的Z位置、以及噴嘴116的配置等。於基礎定盤124,載置有基板平台111。藉由甲板定盤125,將驅動機構109垂吊來支撐。 The memory unit 123 is constituted by a hard disk (memory medium) or the like which is read by the control unit 122. The program shown in the flowchart of FIG. 3 stores the Z position of each of the measuring unit 126 and the discharge means 115, the arrangement of the nozzles 116, and the like. A substrate platform 111 is placed on the base plate 124. The drive mechanism 109 is suspended by the deck plate 125 for support.
關於本實施形態的壓印方法,使用圖3所示的流程圖進行說明。又,本實施形態中,關於吐出口116a與基板101之間距離的分布資訊,係吐出口116a與基板101表面之個別目標的供給位置之間在高度方向的距離分布。控制部122所補正之壓印材102的供給條件,係基板平台111的速度。本實施形態,係適用於當壓印材102對吐出 中之基板平台111的移動方向亦即X軸方向之供給位置的偏差,比對基板平台111之非移動方向亦即Y軸方向之供給位置的偏差還大的情況。 The imprint method of this embodiment will be described using the flowchart shown in FIG. Further, in the present embodiment, the distribution information of the distance between the discharge port 116a and the substrate 101 is a distance distribution in the height direction between the discharge port 116a and the supply position of the individual target on the surface of the substrate 101. The supply condition of the imprint material 102 corrected by the control unit 122 is the speed of the substrate stage 111. This embodiment is suitable for when the imprinted material 102 is discharged. The deviation of the movement direction of the substrate stage 111, that is, the supply position in the X-axis direction, is larger than the deviation of the supply position in the Y-axis direction of the non-moving direction of the substrate stage 111.
首先,以測量部126來測量基板101之高度方向的位置(S101)。測量部126係代表性測量複數個測量點。然後,控制部122,係決定吐出口116a與基板101表面之各位置之間的距離(S102)。控制部122,係根據測量部126的測量結果進行推算吐出口116a與測量點以外之位置之間距離的演算處理,並求出表示基板101之表面高度分布的近似函數F(x,y)。近似函數,可為F(x,y)=ax+by+f所示之1次函數、F(x,y)=ax2+bxy+cy2+dx+ey+f所示之2次函數、或是更高階的函數。 First, the position of the substrate 101 in the height direction is measured by the measuring unit 126 (S101). The measuring unit 126 is representatively measuring a plurality of measuring points. Then, the control unit 122 determines the distance between the discharge port 116a and each position on the surface of the substrate 101 (S102). The control unit 122 performs an arithmetic process of estimating the distance between the discharge port 116a and a position other than the measurement point based on the measurement result of the measurement unit 126, and obtains an approximate function F(x, y) indicating the surface height distribution of the substrate 101. The approximation function can be a quadratic function represented by F(x, y)=ax+by+f, and a quadratic function represented by F(x, y)=ax 2 +bxy+cy 2 +dx+ey+f Or a higher order function.
測量點較佳係選擇成包含基板101的中心區域及外周區域。中心區域係指基板101的半徑中,以一半的半徑所畫出虛擬之圓的內側區域。外周區域,係指包圍中心區域之比中心區域還外周側的區域。藉此,控制部122可精度良好地決定近似函數F(x,y)。 The measurement points are preferably selected to include a central region and a peripheral region of the substrate 101. The central area refers to the inner area of the virtual circle in which the radius of the substrate 101 is drawn by half the radius. The outer peripheral area refers to an area surrounding the central area and on the outer peripheral side of the central area. Thereby, the control unit 122 can accurately determine the approximation function F(x, y).
針對測量部126所致之測量結果使用圖4進行說明。圖4(a)係從+Z方向觀看基板101的圖、圖4(b)係表示通過基板101中心之X位置A-A’間之高度方向之位置分布的圖。每1個圖形區域120之高度方向的位置分布,係相對於X軸方向近似於1階方程式。 The measurement result by the measuring unit 126 will be described using FIG. 4. 4(a) is a view in which the substrate 101 is viewed from the +Z direction, and FIG. 4(b) is a view showing a positional distribution in the height direction between the X positions A-A' at the center of the substrate 101. The positional distribution in the height direction of each of the pattern regions 120 is approximated to the first-order equation with respect to the X-axis direction.
回到圖3的流程圖之說明。接著,控制部 122,係補正供給條件使壓印材102對圖形區域120的供給位置成為目標的供給位置(S103)。該供給條件的補正,係針對基板101上所有的圖形區域120來進行。S103的步驟詳如後述。 Returning to the description of the flowchart of FIG. Then, the control department 122, the supply position is corrected by the supply condition, and the supply position of the imprint material 102 to the pattern area 120 is the target supply position (S103). The correction of the supply conditions is performed for all the pattern regions 120 on the substrate 101. The steps of S103 are as described later.
壓印裝置100,係使用吐出手段115及基板平台111,根據補正後的供給條件來對圖形區域120供給壓印材102(S104)。基板平台111係使基板101移動至與模子103對向的位置。以驅動機構109使模子103下降,進行壓模動作(S105)。 In the imprint apparatus 100, the discharge means 115 and the substrate stage 111 are used, and the imprint material 102 is supplied to the pattern area 120 based on the supply conditions after correction (S104). The substrate stage 111 moves the substrate 101 to a position facing the mold 103. The mold 103 is lowered by the drive mechanism 109, and a press-molding operation is performed (S105).
在使模子103與壓印材102接觸的狀態下,以照射部104對圖形區域120照射紫外線105,來硬化壓印材102(S106)。壓印材102硬化後,以驅動機構109使模子103上昇來進行離模動作(S107)。 In a state where the mold 103 is brought into contact with the imprint material 102, the image region 120 is irradiated with the ultraviolet ray 105 by the illuminating unit 104 to harden the embossed material 102 (S106). After the embossed material 102 is hardened, the mold 109 is raised by the drive mechanism 109 to perform a mold release operation (S107).
接著,以控制部122來判斷還有沒有應形成下一個圖形的圖形區域120(S108)。還有圖形區域120的情況,重複S104~S107的步驟。在沒有應形成圖形的圖形區域120之情況,本程式結束,將在複數個圖形區域120形成有圖形的基板搬出壓印裝置100。 Next, the control unit 122 determines whether or not there is any graphic area 120 in which the next pattern should be formed (S108). In the case of the graphic area 120, the steps of S104 to S107 are repeated. In the case where there is no graphic area 120 in which a pattern is to be formed, the program ends, and the substrate on which the pattern is formed in the plurality of pattern areas 120 is carried out from the imprint apparatus 100.
又,在S103只有進行1個圖形區域120的份之供給條件之補正的情況,在S108的步驟判斷成Yes之後,回到S103的步驟。 In addition, in S103, only the correction of the supply condition of one of the graphics areas 120 is performed. If the determination in step S108 is Yes, the process returns to step S103.
在針對S103之供給條件的補正方法進行說明之前,先以圖5(a)(b)來說明沒有進行補正的情況。 Before the correction method for the supply condition of S103 is described, the case where the correction is not performed will be described with reference to FIGS. 5(a) and 5(b).
圖5(a),係表示平坦之基板101之傾斜的 圖。基板101表示出既定的高度H0。既定的高度,係將基板101載置於吸盤112之際的設計高度。圖5(b)係從+Z方向觀看供給有壓印材102之圖形區域120的圖。 Figure 5 (a) shows the tilt of the flat substrate 101 Figure. The substrate 101 shows a predetermined height H0. The predetermined height is the design height at which the substrate 101 is placed on the chuck 112. Fig. 5(b) is a view in which the pattern region 120 to which the embossed material 102 is supplied is viewed from the +Z direction.
圖6(a)為表示基板101表面傾斜的圖,圖6(b)表示出只有在X軸方向使供給有壓印材102的供給位置產生偏差的情形。以等間隔配列之縱橫虛線的交點10,係理想之壓印材102的供給位置,亦即目標位置(目標供給位置)。黑點係表示供給至基板101的壓印材102。以既定速度使基板平台111往-X方向移動並供給壓印材102的情況,由於從吐出口116a到高度H0為止的距離為一定,故可對交點10供給壓印材102。 Fig. 6(a) is a view showing the inclination of the surface of the substrate 101, and Fig. 6(b) shows a case where the supply position of the imprinted material 102 is supplied only in the X-axis direction. The intersection 10 of the vertical and horizontal dashed lines arranged at equal intervals is the supply position of the desired imprint material 102, that is, the target position (target supply position). The black dots indicate the imprinted material 102 supplied to the substrate 101. When the substrate stage 111 is moved in the -X direction at a predetermined speed and supplied to the imprint material 102, since the distance from the discharge port 116a to the height H0 is constant, the imprint material 102 can be supplied to the intersection 10.
如圖4(b)所示之前述位置B-B’般在圖形區域120的高度方向位置具有傾斜的情況,在比高度H0還高的位置,與吐出口116a之間的距離會變小。吐出手段115,係在基板101朝向X軸方向移動時供給壓印材102。藉此,由於壓印材102的滯空時間變短,故會比在高度H0的位置供給壓印材102的情況還要早供給至基板101。 As in the position B-B' shown in Fig. 4(b), the position in the height direction of the pattern region 120 is inclined, and the distance from the discharge port 116a is reduced at a position higher than the height H0. The discharge means 115 supplies the imprint material 102 when the substrate 101 moves in the X-axis direction. Thereby, since the vacancy time of the embossed material 102 becomes short, it is supplied to the substrate 101 earlier than the case where the embossed material 102 is supplied at the position of the height H0.
相反地,在比高度H0還低的位置,與吐出口116a之間的距離會變大。因此,由於壓印材102的滯空時間變長,故會比在高度H0的位置供給壓印材102的情況還要慢供給至基板101。 Conversely, at a position lower than the height H0, the distance from the discharge port 116a becomes large. Therefore, since the quiescent time of the embossed material 102 becomes long, it is supplied to the substrate 101 more slowly than when the embossed material 102 is supplied at the position of the height H0.
因此如圖6(b)所示般,基板101之高度方向的位置離高度H0越遠,則壓印材102對交點10的位置 偏差會越大。 Therefore, as shown in FIG. 6(b), the position of the substrate 101 in the height direction is farther from the height H0, and the position of the stamp 102 to the intersection 10 is obtained. The deviation will be greater.
在基板平台111所移動的X軸方向,對於基板101之Z軸方向的分布所致之供給位置的偏差,有著以控制部122補正基板平台111的移動速度來補正供給位置之偏差的方法。 In the X-axis direction in which the substrate stage 111 moves, the deviation of the supply position due to the distribution of the substrate 101 in the Z-axis direction has a method in which the control unit 122 corrects the moving speed of the substrate stage 111 to correct the deviation of the supply position.
圖7表示在高度H1的位置A供給壓印材102時的情形。將補正前之基板平台111的移動速度設為V1。壓印材102的吐出速度為V2。將吐出口116a與高度H1的目標位置亦即位置A之間的Z軸方向距離設為H1。吐出時之位置A的X位置與吐出口116a的X位置之間的距離為L1時,吐出手段115吐出壓印材102。使補正後之基板平台111的移動速度為V1+△V時,式(1)、(2)成立。 Fig. 7 shows the case when the imprint material 102 is supplied at the position A of the height H1. The moving speed of the substrate stage 111 before correction is set to V1. The discharge speed of the embossed material 102 is V2. The Z-axis direction distance between the discharge port 116a and the target position of the height H1, that is, the position A is set to H1. When the distance between the X position of the position A at the time of discharge and the X position of the discharge port 116a is L1, the discharge means 115 discharges the imprint material 102. When the moving speed of the corrected substrate stage 111 is V1 + ΔV, the equations (1) and (2) are established.
控制部122,係藉由式(1)、(2)來以式(3)決定速度的補正量△V。 The control unit 122 determines the correction amount ΔV of the speed by the equations (3) by the equations (1) and (2).
T1=L1/(V1+△V)‧‧‧(1) T1=L1/(V1+△V)‧‧‧(1)
T2=H1/V2‧‧‧(2) T2=H1/V2‧‧‧(2)
△V=(L1.V2)/H1-V1‧‧‧(3) △V=(L1.V2)/H1-V1‧‧‧(3)
圖8(a)表示基板101之各X位置的高度與基板平台111的移動速度之關係。 FIG. 8(a) shows the relationship between the height of each X position of the substrate 101 and the moving speed of the substrate stage 111.
如上述般,控制部122,係將對比既定高度H0還低的目標位置供給壓印材102時的移動速度,設定成大於對比既定高度H0還高的目標位置供給壓印材102時的前述移動速度。 As described above, the control unit 122 sets the moving speed when the imprint material 102 is supplied at a target position lower than the predetermined height H0 to the moving speed when the imprint material 102 is supplied at a target position higher than the predetermined height H0.
以控制部122補正供給條件,藉此可在吐出口116a與基板之間距離有著不均的情況,比以往還能夠對基板101上的目標位置精度良好地供給壓印材102。 When the control unit 122 corrects the supply condition, the distance between the discharge port 116a and the substrate can be uneven, and the imprint material 102 can be accurately supplied to the target position on the substrate 101 as compared with the related art.
藉此,壓印裝置100,係可形成圖形缺陷較少的良好圖形,來作為硬化後之壓印材102的圖形。 Thereby, the imprint apparatus 100 can form a good pattern with less pattern defects as a pattern of the hardened imprint material 102.
本實施形態中,測量部126係測量基板101表面的Z位置。本實施形態中,關於吐出口116a與基板101之間距離的分布資訊,係吐出口116a與基板101表面之個別目標的供給位置之間在高度方向的距離分布。 In the present embodiment, the measuring unit 126 measures the Z position of the surface of the substrate 101. In the present embodiment, the distribution information of the distance between the discharge port 116a and the substrate 101 is a distance distribution in the height direction between the discharge port 116a and the supply position of the individual target on the surface of the substrate 101.
控制部122所補正之壓印材102的供給條件,係壓印材102的吐出時間點。其將吐出的時間點,以第1次吐出開始的時刻、和從前次吐出時刻到下次吐出時刻為止的時間間隔(吐出間隔)來控制之情況的實施形態。關於壓印裝置100的構造,未說明的部分係與第1實施形態相同。 The supply condition of the imprint material 102 corrected by the control unit 122 is the discharge time point of the stamp material 102. The time point at which the discharge is performed is controlled by the time at which the first discharge starts and the time interval (discharge interval) from the previous discharge time to the next discharge time. The structure of the imprint apparatus 100 is the same as that of the first embodiment.
本實施形態,亦可適用於圖形區域120之朝X軸方向的傾斜與朝Y軸方向的傾斜之其中一方較大的情況。關於實施形態的壓印方法之中,僅針對與第1實施形態不同的S103之步驟進行說明。 This embodiment can also be applied to a case where one of the inclination of the pattern region 120 in the X-axis direction and the inclination in the Y-axis direction is large. Among the imprint methods of the embodiment, only the steps of S103 which are different from the first embodiment will be described.
吐出手段115在以吐出間隔T週期性地吐出壓印材102的情況,如圖8(b)所示般控制吐出時間點。在高度比H0還高的情況係對T延後吐出壓印材 102,在高度比H0還低的情況係對T提早吐出壓印材102。 The discharge means 115 periodically discharges the imprint material 102 at the discharge interval T, and controls the discharge time point as shown in FIG. 8(b). In the case where the height is higher than H0, the T is delayed and the imprinted material is discharged. 102. When the height is lower than H0, the imprint material 102 is ejected early.
亦即,對高度比既定高度H0還低的目標位置來供給之壓印材102的吐出時間點,係早於對比既定高度H0還高的目標位置來供給之壓印材102的吐出時間點。 In other words, the discharge time point of the imprint material 102 supplied to the target position having a height lower than the predetermined height H0 is the discharge time point of the imprint material 102 supplied earlier than the target position higher than the predetermined height H0.
在對比既定高度H0還要高的目標位置供給的情況,控制部122,係將在既定高度H0所供給的壓印材102吐出後到下一次供給壓印材102為止的時間,補正成T+△T。以式(4)所示的△T來延遲吐出的時間點。 In the case where the supply is performed at a target position higher than the predetermined height H0, the control unit 122 corrects the time until the next time the supply of the imprint material 102 is performed after the imprint material 102 supplied at the predetermined height H0 is discharged to T+ΔT. The time point of the discharge is delayed by ΔT shown by the formula (4).
△T=L1/V1-H1/V2‧‧‧(4) △T=L1/V1-H1/V2‧‧‧(4)
相對於在位置A之後供給的位置,只要將朝向位置A吐出的壓印材102吐出之後到下一次吐出壓印材為止的時間設成(T+2‧△T)即可。藉由補正每次吐出壓印材102的吐出時間點,可補正供給位置的偏差。 The position to be supplied after the position A is discharged is set to (T+2‧ΔT) by the time until the imprinted material 102 discharged toward the position A is discharged and the next time the imprinted material is discharged. By correcting the discharge time point at which the imprint material 102 is discharged each time, the deviation of the supply position can be corrected.
以控制部122補正供給條件,藉此可在吐出口116a與基板之間距離有著不均的情況,比以往還能夠對基板101上的目標位置精度良好地供給壓印材102。 When the control unit 122 corrects the supply condition, the distance between the discharge port 116a and the substrate can be uneven, and the imprint material 102 can be accurately supplied to the target position on the substrate 101 as compared with the related art.
藉此,壓印裝置100,係可形成圖形缺陷較少的良好圖形,來作為硬化後之壓印材102的圖形。 Thereby, the imprint apparatus 100 can form a good pattern with less pattern defects as a pattern of the hardened imprint material 102.
本實施形態中,關於吐出口116a與基板101之間距離的分布資訊,係基準位置的高度與壓印材102之目標位置的高度之間之差的分布。控制部122所補正之壓印材 102的供給條件,係壓印材102的吐出時間點。關於壓印裝置100的構造,未說明的部分係與第1實施形態相同。關於實施形態的壓印方法之中,僅針對與第1實施形態不同的S103之步驟進行說明。 In the present embodiment, the distribution information of the distance between the discharge port 116a and the substrate 101 is the distribution of the difference between the height of the reference position and the height of the target position of the platen 102. Imprinted material corrected by control unit 122 The supply condition of 102 is the discharge time point of the embossed material 102. The structure of the imprint apparatus 100 is the same as that of the first embodiment. Among the imprint methods of the embodiment, only the steps of S103 which are different from the first embodiment will be described.
測量基板101的表面形狀,來作為關於基板101表面之Z軸方向的位置資訊。測量部126,係如圖9所示般,將基板101之表面形狀的資訊輸出至控制部122。表面形狀,係關於基板101之面外方向(本實施形態中為Z軸方向、基板的厚度方向)的形狀資訊。將測量部126與基板101表面之間的距離,在基板101的複數部位測量,並根據測量結果來算出基板101之3次元的表面形狀。 The surface shape of the substrate 101 is measured as positional information on the Z-axis direction of the surface of the substrate 101. The measuring unit 126 outputs information on the surface shape of the substrate 101 to the control unit 122 as shown in FIG. 9 . The surface shape is shape information regarding the out-of-plane direction of the substrate 101 (the Z-axis direction in the present embodiment, the thickness direction of the substrate). The distance between the measuring unit 126 and the surface of the substrate 101 is measured at a plurality of portions of the substrate 101, and the surface shape of the third dimension of the substrate 101 is calculated based on the measurement result.
得到相對於虛擬的平坦面亦即基準面201之關於基板101表面(測量對象的面、與模子103對向的面)的各位置朝面外方向偏差的資訊。將基準面201的中心稱為基準位置。 Information about the deviation of each position of the surface of the substrate 101 (the surface of the measurement target and the surface facing the mold 103) with respect to the virtual flat surface, that is, the reference surface 201, in the out-of-plane direction is obtained. The center of the reference surface 201 is referred to as a reference position.
圖9為基板101之X軸方向的剖面圖,係表示基準面201(虛線)與各X位置之基板101的表面位置(實線)之間關係的圖。 FIG. 9 is a cross-sectional view of the substrate 101 in the X-axis direction, and is a view showing a relationship between the reference surface 201 (broken line) and the surface position (solid line) of the substrate 101 at each X position.
控制部122,係決定基準位置的高度與壓印材102之目標位置的高度之差△H的分布。在圖9中,圖示出目標位置為位置C(X,Y)之差△H。在將來自吐出手段115之樹脂的吐出速度作為V2的情況,滯空時間與基準位置相比,會短△H/V2。 The control unit 122 determines the distribution of the difference ΔH between the height of the reference position and the height of the target position of the imprint material 102. In Fig. 9, the target position is shown as the difference ΔH between the positions C (X, Y). When the discharge speed of the resin from the discharge means 115 is V2, the air time is shorter than the reference position by ΔH/V2.
因此,只要以控制部122補正吐出時間點來使吐出時間點提早△T=△H/V2即可。控制部122,在對其他目標位置吐出的情況,亦同樣地補正吐出時間點。 Therefore, the control unit 122 may correct the discharge time point to make the discharge time point ΔT=ΔH/V2 earlier. The control unit 122 corrects the discharge time point in the same manner when discharging the other target position.
如上述般,控制部122係補正成:使對比既定高度還低的目標位置來供給之壓印材102的吐出時間點,早於對比既定高度還高之目標位置來供給之壓印材102的吐出時間點。 As described above, the control unit 122 corrects the discharge time of the imprint material 102 supplied at a discharge time point of the imprint material 102 supplied at a target position lower than the predetermined height, and at a target position higher than the predetermined height. point.
以控制部122補正供給條件,藉此可在吐出口116a與基板之間距離有著不均的情況,比以往還能夠對基板101上的目標位置精度良好地供給壓印材102。 When the control unit 122 corrects the supply condition, the distance between the discharge port 116a and the substrate can be uneven, and the imprint material 102 can be accurately supplied to the target position on the substrate 101 as compared with the related art.
藉此,壓印裝置100,係可形成圖形缺陷較少的良好圖形,來作為硬化後之壓印材102的圖形。 Thereby, the imprint apparatus 100 can form a good pattern with less pattern defects as a pattern of the hardened imprint material 102.
又,第2實施形態及第3實施形態中,補正的吐出時間點亦可沒有時間間隔。將吐出壓印材102的時間點以時刻來管理的情況,控制部122係將對比既定高度H0還高的目標位置來供給之壓印材102予以吐出的時刻,變得比補正前的時刻還早。 Further, in the second embodiment and the third embodiment, the corrected discharge time point may have no time interval. When the timing at which the embossed material 102 is discharged is managed at the time, the timing at which the control unit 122 discharges the embossed material 102 supplied at a target position higher than the predetermined height H0 is earlier than the time before the correction.
且,控制部122係將對比既定高度H0還低的目標位置來供給之壓印材102予以吐出的時刻,補正成比補正前的時刻還晚。 Further, the control unit 122 corrects the timing at which the imprinted material 102 supplied to the target position which is lower than the predetermined height H0 is discharged, and corrects it to be later than the time before the correction.
此情況時,吐出時間點的早/晚,係可稱之為吐出口116a的位置(X,Y)與目標位置的位置(X,Y)之在XY平面內的距離為大/小之時從吐出口116a吐出。 In this case, the morning/late time of the discharge time point is when the distance between the position (X, Y) of the discharge port 116a and the position (X, Y) of the target position in the XY plane is large/small. Discharged from the discharge port 116a.
如上述般補正吐出時間點的情況,亦可以控 制部122來補正供給條件,藉此可對基板101上的目標位置精度良好地供給壓印材102。 If you correct the time of the spit out as above, you can control it. The manufacturing unit 122 corrects the supply conditions, whereby the imprint material 102 can be accurately supplied to the target position on the substrate 101.
本實施形態中,關於吐出口116a與基板101之間距離的分布資訊,係基準位置的高度與壓印材102之目標位置的高度之間之差的分布。基準位置的說明,係與第3實施形態相同故省略說明。控制部122所補正之壓印材102的供給條件,係壓印材102的吐出速度。關於壓印裝置100的構造,未說明的部分係與第1實施形態相同。 In the present embodiment, the distribution information of the distance between the discharge port 116a and the substrate 101 is the distribution of the difference between the height of the reference position and the height of the target position of the platen 102. The description of the reference position is the same as that of the third embodiment, and the description thereof is omitted. The supply condition of the imprint material 102 corrected by the control unit 122 is the discharge speed of the stamp material 102. The structure of the imprint apparatus 100 is the same as that of the first embodiment.
將施加於壓電元件的電壓驅動波形予以變更來補正吐出速度。控制部122,係使對比既定高度還低的目標位置來供給之壓印材102的吐出速度,大於對比既定高度還高的目標位置來供給之壓印材102的吐出速度。關於實施形態的壓印方法之中,僅針對與第1實施形態不同的S103之步驟進行說明。 The voltage drive waveform applied to the piezoelectric element is changed to correct the discharge speed. The control unit 122 is configured to make the discharge speed of the imprint material 102 supplied to the target position which is lower than the predetermined height, and the discharge speed of the imprint material 102 to be supplied at a target position higher than the predetermined height. Among the imprint methods of the embodiment, only the steps of S103 which are different from the first embodiment will be described.
在吐出速度的補正前,基板平台111在往+X方向以速度V1移動的期間,吐出手段115係以吐出速度V2來吐出壓印材102,以此情況為例來進行說明。控制部122,係在基板101的目標位置高度比基準位置高度H0還低的情況,使吐出速度比V2還大。 Before the correction of the discharge speed, the substrate platform 111 is ejected at the speed V1 in the +X direction, and the discharge means 115 discharges the imprint material 102 at the discharge speed V2. The control unit 122 sets the discharge speed to be larger than V2 when the target position height of the substrate 101 is lower than the reference position height H0.
具體來說,在目標位置比高度H0還低△H的情況,係補正成壓印材102在吐出之後到供給至基板101為止的滯空時間△t為滿足=(H0+△H)/V的吐出速度V。 Specifically, when the target position is lower by ΔH than the height H0, the emptying time Δt of the imprinted material 102 after being discharged to the substrate 101 after the discharge is corrected is a discharge satisfying = (H0 + ΔH) / V. Speed V.
同樣,控制部122,係在基板101的目標位置高度比高度H0還高的情況,使吐出速度比V2還小。具體來說,在目標位置比高度H0還高△H的情況,係補正成滿足△t=(H0-△H)/V的吐出速度V。 Similarly, the control unit 122 sets the discharge speed to be smaller than V2 when the target position height of the substrate 101 is higher than the height H0. Specifically, when the target position is higher than the height H0 by ΔH, the discharge speed V satisfying Δt=(H0-ΔH)/V is corrected.
如上述般,控制部122,係根據吐出口116a與基板101之間距離的分布資訊來補正吐出速度。 As described above, the control unit 122 corrects the discharge speed based on the distribution information of the distance between the discharge port 116a and the substrate 101.
藉此,可減低壓印材102的供給位置對目標位置的偏差。因此,壓印裝置100,可精度良好地形成硬化後之壓印材102的圖形。 Thereby, the deviation of the supply position of the low-pressure printing material 102 from the target position can be reduced. Therefore, the imprint apparatus 100 can accurately form the pattern of the cured imprint material 102.
第5實施形態中,作為測量基板101之表面高度方向之位置的測量手段,係取代測量部126,而使用攝影部121及控制部122。攝影部121係在基板101移動的期間,使用作為拍攝手段,來拍攝以吐出手段115在不同時間點吐出且供給至基板101之至少2處的壓印材102。 In the fifth embodiment, as the measuring means for measuring the position of the surface height direction of the substrate 101, the imaging unit 121 and the control unit 122 are used instead of the measuring unit 126. The imaging unit 121 captures the imprint material 102 which is ejected at different time points by the discharge means 115 and supplied to at least two of the substrates 101 while the substrate 101 is being moved.
此外,將控制部122使用作為算出手段,來將攝影部121的拍撮結果予以圖像處理,藉此算出該至少2處的位置。關於壓印裝置100的構造,未說明的部分係與第1實施形態相同。 Further, the control unit 122 uses the calculation means as an arithmetic means to image-process the result of the photographing by the photographing unit 121, thereby calculating the position of the at least two places. The structure of the imprint apparatus 100 is the same as that of the first embodiment.
藉此,測量基板101表面的Z位置。 Thereby, the Z position of the surface of the substrate 101 is measured.
圖10(a)係從+Z方向觀看吐出手段115與基板平台111的圖,圖10(b)係從-Y方向觀看、10圖(c)係從+X方向觀看的圖。 Fig. 10 (a) is a view in which the discharge means 115 and the substrate stage 111 are viewed from the +Z direction, and Fig. 10 (b) is viewed from the -Y direction, and Fig. 10 (c) is viewed from the +X direction.
如圖10(b)所示般,在基板平台111將基板101以速度V1朝+X方向移動的期間,吐出手段115係以吐出速度V2來吐出壓印材102。針對基板101只有朝繞Y軸的旋轉成分ωY方向傾斜有角度θ、或是朝繞X軸的旋轉成分ωX方向傾斜有角度之於一方向傾斜的情況進行說明。 As shown in FIG. 10(b), while the substrate platform 111 moves the substrate 101 in the +X direction at the speed V1, the discharge means 115 discharges the imprinted material 102 at the discharge speed V2. The substrate 101 is inclined at an angle θ toward the rotation component ωY about the Y axis or at an angle θX about the X axis. The case of tilting in one direction will be described.
以圖10(c)圖示出,相對於基板平台111的移動方向,於垂直方向(Y軸方向)分開距離W來設置的2個吐出口116a、116b。 As shown in FIG. 10(c), two discharge ports 116a and 116b which are provided at a distance W in the vertical direction (Y-axis direction) with respect to the moving direction of the substrate stage 111 are illustrated.
針對角度θ、角度的求得方法,如以下說明。 For angle θ, angle The method of obtaining is as explained below.
首先,使基板101在基板平台111以一定速度V1移動,並在時刻T1,吐出手段115會從吐出口116a、116b同時吐出壓印材102。吐出口116a,係先吐出壓印材102並經過既定時間T之後(時刻T2)再次吐出壓印材102。 First, the substrate 101 is moved at a constant speed V1 on the substrate stage 111, and at time T1, the discharge means 115 simultaneously discharges the imprinted material 102 from the discharge ports 116a, 116b. The discharge port 116a discharges the imprint material 102 first and then ejects the imprint material 102 after a predetermined time T (time T2).
亦即,吐出口116a,係在不同時間點對基板101的至少2處進行吐出。 That is, the discharge port 116a discharges at least two places of the substrate 101 at different time points.
攝影部121,係拍攝供給過壓印材102的基板101。圖11(a)表示攝影部121拍攝壓印材102時的情況。位置311,係時刻T1之由吐出口116a所吐出之壓印材102的位置。位置312,係時刻T2之由吐出口116a所吐出之壓印材102的位置。位置313,係在時刻T1由吐出口116a所吐出之壓印材102的位置。 The photographing unit 121 photographs the substrate 101 to which the overprinting material 102 is supplied. FIG. 11( a ) shows a case where the imaging unit 121 captures the imprint material 102 . The position 311 is the position of the imprint material 102 discharged from the discharge port 116a at the time T1. The position 312 is the position of the imprint material 102 discharged from the discharge port 116a at the time T2. The position 313 is the position of the imprint material 102 discharged from the discharge port 116a at time T1.
接著,攝影部121對拍攝結果進行圖像處理,並以控制部122算出位置311、312、313的位置(X,Y)。控制部122,係使用所算出之位置311、312、313的資訊,來算出角度θ、角度。針對角度θ、角度的算出方法,使用圖11(a)及圖11(b)進行說明。 Next, the imaging unit 121 performs image processing on the imaging result, and calculates the position (X, Y) of the positions 311, 312, and 313 by the control unit 122. The control unit 122 calculates the angle θ and the angle using the calculated information of the positions 311, 312, and 313. . For angle θ, angle The calculation method will be described using FIG. 11(a) and FIG. 11(b).
位置311與位置312的距離為L’。距離L’,係比在時間T之間以速度V1使基板平台111前進的距離L=V1‧T還長AL’=L’-L=L’-V1‧T。 The distance between position 311 and position 312 is L'. The distance L' is greater than the distance L = V1‧T which is advanced by the substrate V at a speed V1 between the times T and AL' = L' - L = L' - V1‧T.
這是因為,基板101的表面形狀對水平面傾斜了角度θ時與落點位置的高度差了距離H,且在時刻T1吐出之壓印材102的滯空時間t、與在時刻T2吐出之壓印材102的滯空時間t2不同導致。 This is because the surface shape of the substrate 101 is inclined by the distance θ from the horizontal plane by a distance H, and the empty time t of the imprinted material 102 discharged at the time T1 and the imprinted material discharged at the time T2. The dead time t2 of 102 is different.
由於滯空時間的差為△T=t2-t1=H/V2,故成立距離H=(L’-V1‧T)‧V2/V1。控制部122,係計算式(10)來算出角度θ。 Since the difference in the dead time is ΔT = t2 - t1 = H / V2, the distance H = (L' - V1‧T) ‧ V2 / V1 is established. The control unit 122 calculates the angle θ by calculating the equation (10).
θ=tan-1(H/L’)=tan-1{(L’-V1‧T)‧V2/(V1‧L’)}‧‧‧(10) θ=tan -1 (H/L')=tan -1 {(L'-V1‧T)‧V2/(V1‧L')}‧‧‧(10)
控制部122,係使用所得到之位置311、313的資訊來算出角度。 The control unit 122 calculates the angle using the information of the obtained positions 311 and 313. .
位置311的X位置、與位置312的X位置,係分離有距離D1。 The X position of the position 311 and the X position of the position 312 are separated by a distance D1.
這是因為,基板101的表面形狀對水平面傾斜了角度時,滯空時間變長,而基板101會朝X軸方向移動該滯空時間變長的部份所導致。成立D1/V1=W‧tan()/V2的關係式。 This is because the surface shape of the substrate 101 is inclined at an angle to the horizontal plane. At this time, the quiescent time becomes long, and the substrate 101 moves in the X-axis direction by the portion where the lag time becomes longer. Established D1/V1=W‧tan( ) /V2 relationship.
藉此,控制部122係計算式(11)來算出角度。 Thereby, the control unit 122 calculates the angle by calculating the equation (11). .
=tan-1{(D1‧V2/(V1/W)}‧‧‧(11) =tan -1 {(D1‧V2/(V1/W)}‧‧‧(11)
如此一來,控制部122可算出基板101的角度θ、角度。 In this way, the control unit 122 can calculate the angle θ and the angle of the substrate 101. .
且,控制部122,係算出位置312與理想的位置320之間的偏差△L,而可算出位置311的Z位置。 Further, the control unit 122 calculates the deviation ΔL between the position 312 and the ideal position 320, and calculates the Z position of the position 311.
此外,使用位置312、313、角度θ、角度,來算出位置312、313之各自的Z位置。 In addition, use positions 312, 313, angle θ, angle Then, the Z positions of the positions 312 and 313 are calculated.
藉此,根據位置311、312、313之XY的位置(與高度方向交差之平面內的位置成分)來算出(決定)基板101的Z位置。 Thereby, the Z position of the substrate 101 is calculated (determined) based on the position of the XY of the positions 311, 312, and 313 (the positional component in the plane intersecting the height direction).
控制部122,係根據位置311、312、313的Z位置,來決定關於吐出口116a與基板101之間之距離的分布資訊,並補正壓印材的供給條件。詳細的補正方法係與第1實施形態相同,故省略說明。 The control unit 122 determines distribution information on the distance between the discharge port 116a and the substrate 101 based on the Z positions of the positions 311, 312, and 313, and corrects the supply conditions of the imprint material. Since the detailed correction method is the same as that of the first embodiment, the description thereof is omitted.
以控制部122補正供給條件,藉此可在吐出口116a與基板101之間距離有著不均的情況,比以往還能夠對基板101上的目標位置精度良好地供給壓印材102。 When the control unit 122 corrects the supply conditions, the distance between the discharge port 116a and the substrate 101 can be uneven, and the imprint material 102 can be accurately supplied to the target position on the substrate 101 as compared with the related art.
藉此,壓印裝置100,係可形成圖形缺陷較少的良好圖形,來作為硬化後之壓印材102的圖形。 Thereby, the imprint apparatus 100 can form a good pattern with less pattern defects as a pattern of the hardened imprint material 102.
本實施形態的情況,由於攝影部121和控制部122都使用於硬化之壓印材102的壓印處理,故可抑制 測量部126般之裝置的增加。 In the case of the present embodiment, since both the imaging unit 121 and the control unit 122 are used for the imprint process of the cured imprint material 102, it is possible to suppress The increase in the device like the measuring unit 126.
在使用攝影部121來測量壓印材102之吐出的位置之前,對基板101照射紫外線105來使壓印材102硬化較佳。 Before the photographing unit 121 measures the position at which the imprinted material 102 is ejected, it is preferable to irradiate the substrate 101 with the ultraviolet ray 105 to cure the imprinted material 102.
在控制部122的圖像處理之際,可提高壓印材102之位置測量的精度。 At the time of image processing by the control unit 122, the accuracy of the position measurement of the imprint material 102 can be improved.
使用於測量的基板101,可與使用於壓印處理的基板(製程晶圓)相同,亦可使用不同的基板(裸晶圓)。 The substrate 101 used for measurement may be the same as the substrate (process wafer) used for the imprint process, or a different substrate (bare wafer) may be used.
在使用製程晶圓的情況,只要避開用壓印材102壓印處理形成圖形的區域,來調整基板平台111的移動條件或調整壓印材102的吐出時間間隔來供給至分隔線上即可。 When the process wafer is used, it is sufficient to adjust the movement condition of the substrate stage 111 or adjust the discharge time interval of the imprint material 102 to avoid supply to the separation line by avoiding the area where the pattern is formed by the imprint material 102.
使用裸晶圓的情況,以壓印材102的接觸角較大的材質或施有加工之測量用的專用基板為佳。 In the case of using a bare wafer, it is preferable to use a material having a large contact angle of the imprint material 102 or a dedicated substrate for processing measurement.
例如,使用塗覆有氟系材料的基板為佳。 For example, it is preferred to use a substrate coated with a fluorine-based material.
調整時間T使距離L變小,藉此測量基板101之複數個區域各自的傾斜亦可。控制部122,係推測演算複數區域的測量結果,來算出基板101的3維形狀亦可。使用於測量的吐出口116a的數量並不限於2個。使用全部的吐出口來廣範圍測量基板101的表面形狀亦可。 The adjustment time T makes the distance L small, whereby the inclination of each of the plurality of regions of the substrate 101 can be measured. The control unit 122 estimates the measurement result of the complex region and calculates the three-dimensional shape of the substrate 101. The number of the discharge ports 116a used for measurement is not limited to two. The surface shape of the substrate 101 may be measured over a wide range using all of the discharge ports.
且,例如在知道沒有角度的情況等之沒有測量之必要的情況,只使用吐出口116a亦可。 And, for example, knowing that there is no angle In the case where there is no need for measurement, etc., only the discharge port 116a may be used.
雖然係將預先設定的供給條件以控制部122補正來作成新的供給條件的情況為中心來進行了說明,但本發明並不限定於此。 Although the case where the predetermined supply condition is corrected by the control unit 122 to create a new supply condition has been described, the present invention is not limited thereto.
例如,亦可根據使用測量部126或攝影部121所得到之關於吐出口116a與基板101之間距離的分布資訊,來另外作成供給條件。 For example, the supply condition may be additionally generated based on the distribution information on the distance between the discharge port 116a and the substrate 101 obtained by the measurement unit 126 or the imaging unit 121.
使基板101與吐出口116a相對移動的移動手段,亦可使噴嘴116移動來使基板101與吐出口116a相對移動。壓印裝置100,亦可將關於吐出口116a與基板101之間距離的分布資訊、控制部122所補正之壓印材102的供給條件、以及作為測量手段在前述各實施形態所舉出者予以適當組合。關於組合之實施形態的壓印裝置100,亦可對基板101上的目標位置精度良好地供給壓印材102。 The moving means for relatively moving the substrate 101 and the discharge port 116a may move the nozzle 116 to move the substrate 101 and the discharge port 116a relative to each other. The imprint apparatus 100 may also appropriately distribute the distribution information on the distance between the discharge port 116a and the substrate 101, the supply conditions of the imprint material 102 corrected by the control unit 122, and the measurement means in the above embodiments. combination. In the imprint apparatus 100 of the embodiment of the combination, the imprint material 102 can be accurately supplied to the target position on the substrate 101.
作為用來補正供給位置之偏差的供給條件,例如可舉出以下條件。在對基板101上供給壓印材102時之基板平台111的移動速度、來自吐出口116a之壓印材102的吐出速度、以及來自吐出口116a之壓印材102的吐出時間點。組合複數種類之供給條件的補正,來補正該等供給條件之中至少1個供給條件亦可。 As a supply condition for correcting the deviation of the supply position, for example, the following conditions can be mentioned. The moving speed of the substrate stage 111 when the imprint material 102 is supplied onto the substrate 101, the ejecting speed of the imprint material 102 from the discharge port 116a, and the ejecting time point of the imprint material 102 from the discharge port 116a. The correction of the supply conditions of the plurality of types may be combined to correct at least one of the supply conditions.
控制部122所致之供給條件的補正,亦可對複數個吐出口116a適用不同的補正量。 The correction of the supply conditions by the control unit 122 may apply different correction amounts to the plurality of discharge ports 116a.
作為關於實施形態的壓印方法,測量部126 亦可配置在壓印裝置100外部。此情況時,測量部126輸出至控制部122的資訊,亦可為基板101的表面形狀。 As an imprint method of the embodiment, the measuring unit 126 It can also be disposed outside the imprint apparatus 100. In this case, the information output from the measurement unit 126 to the control unit 122 may be the surface shape of the substrate 101.
控制部122,亦可設置在與壓印裝置100之其他構成要素共通的框體內,亦可設置在框體外。 The control unit 122 may be provided in a casing that is common to other components of the imprint apparatus 100, or may be provided outside the casing.
且,控制部122,亦可為依照控制對象物或功能(作為算出手段的功能、作為決定手段的功能、作為補正手段的功能等)而有所不同之控制基板的集合體。 Further, the control unit 122 may be an aggregate of control boards that differ depending on the object to be controlled, the function (the function as the calculation means, the function as the determination means, the function as the correction means, etc.).
基板101,係使用玻璃、陶瓷、金屬、半導體、壓印材等,因應必要,在其表面形成有與基板不同材料的構件亦可。基板101,具體來說,係矽晶圓、化合物半導體晶圓、石英玻璃等。 As the substrate 101, glass, ceramics, metal, semiconductor, imprint material, or the like is used, and if necessary, a member different from the substrate may be formed on the surface thereof. The substrate 101 is specifically a germanium wafer, a compound semiconductor wafer, quartz glass, or the like.
於壓印材102,係使用有藉由賦予硬化用的能量而硬化的硬化性組成物(亦稱為未硬化狀態的壓印材)。 The embossed material 102 is made of a curable composition (also referred to as an uncured state embossed material) which is cured by imparting energy for curing.
作為硬化用的能量,使用有電磁波、熱等。 As the energy for hardening, electromagnetic waves, heat, and the like are used.
作為電磁波,例如為由波長為10nm以上1mm以下的範圍所選擇之紅外線、可見光線、紫外線等的光。 The electromagnetic wave is, for example, light such as infrared rays, visible light rays, or ultraviolet rays selected from the range of a wavelength of 10 nm or more and 1 mm or less.
硬化性組成物,係藉由光的照射,或是藉由加熱來硬化的組成物。其中,藉由光來硬化的光硬化性組成物,係至少含有聚合性化合物與光聚合起始劑,且因應必要含有非聚合性化合物或溶劑亦可。 The curable composition is a composition that is hardened by irradiation of light or by heating. Among them, the photocurable composition which is cured by light contains at least a polymerizable compound and a photopolymerization initiator, and may contain a non-polymerizable compound or a solvent as necessary.
非聚合性化合物,係從感光劑、授氫體、內添型離模劑、界面活性劑、抗氧化劑、聚合物成分等之群 中所選擇的至少一種。 A non-polymerizable compound is a group of a sensitizer, a hydrogen donor, an internal addition type release agent, a surfactant, an antioxidant, a polymer component, and the like. At least one of the choices.
壓印材102,係成為液滴狀,或連結複數液滴而成的島狀或膜狀來賦予至基板101上亦可。壓印材的黏度(25℃時的黏度),例如為1mPa‧s以上100mPa‧s以下。 The embossed material 102 may be formed in a droplet shape or an island shape or a film shape in which a plurality of droplets are connected to the substrate 101. The viscosity of the imprint material (viscosity at 25 ° C) is, for example, 1 mPa ‧ or more and 100 mPa ‧ s or less.
使用壓印裝置100所形成之硬化物的圖形,係永久地使用於各種物品的至少一部分,或是在製造各種物品之際暫時地使用。 The pattern of the cured product formed by the imprint apparatus 100 is permanently used for at least a part of various articles or temporarily used for the manufacture of various articles.
所謂物品,係電氣電路元件、光學元件、MEMS、記憶元件、感測器、或模具等。作為電氣電路元件,可舉出如DRAM、SRAM、快閃記憶體、MRAM般之揮發性或非揮發性的半導體記憶體、LSI、CCD、圖像感測器、FPGA般之半導體元件等。作為模具,可舉出壓印用的模子等。 The article is an electrical circuit component, an optical component, a MEMS, a memory component, a sensor, or a mold. Examples of the electric circuit component include volatile or nonvolatile semiconductor memory such as DRAM, SRAM, flash memory, and MRAM, LSI, CCD, image sensor, and FPGA-like semiconductor element. Examples of the mold include a mold for imprinting and the like.
硬化物的圖形,係作為上述物品之至少一部分的構成構件來直接使用,或是作為抗蝕掩模來暫時使用。基板的加工工程中,在進行蝕刻或離子注入等之後,除去抗蝕掩模。 The pattern of the cured product is used as a constituent member of at least a part of the above-mentioned article, or is temporarily used as a resist mask. In the processing of the substrate, the etching mask is removed after etching or ion implantation or the like.
以上,雖針對本發明的較佳實施形態進行了說明,但本發明當然不限於該實施形態,在其主旨範圍內可進行各種變形及變更。 The present invention has been described with reference to the preferred embodiments of the present invention. However, the present invention is not limited to the embodiments, and various modifications and changes can be made therein.
本發明並不限於上述實施的形態,只要在不 脫離本發明的精神及範圍,可進行各式各樣的變更及變形。因此,為了公開本發明的範圍,附上以下的請求項。 The present invention is not limited to the above-described embodiment, as long as it is not Various changes and modifications can be made without departing from the spirit and scope of the invention. Therefore, in order to disclose the scope of the present invention, the following claims are attached.
本案係以2015年11月30日提出的日本國專利申請「特願2015-234318」為基礎來主張優先權,其記載內容全部援用於此。 The priority is claimed on the basis of the Japanese patent application "Japanese Patent Application No. 2015-234318" filed on November 30, 2015, the entire contents of which are hereby incorporated herein.
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JP5229206B2 (en) * | 2009-12-18 | 2013-07-03 | 大日本印刷株式会社 | Method for producing antireflection film |
JP5563319B2 (en) * | 2010-01-19 | 2014-07-30 | キヤノン株式会社 | Imprint apparatus and article manufacturing method |
JP5335717B2 (en) * | 2010-03-16 | 2013-11-06 | 富士フイルム株式会社 | Resist composition arranging apparatus and pattern forming body manufacturing method |
JP5214683B2 (en) * | 2010-08-31 | 2013-06-19 | 株式会社東芝 | Imprint recipe creating apparatus and method, and imprint apparatus and method |
JP5404570B2 (en) * | 2010-09-24 | 2014-02-05 | 株式会社東芝 | Drip control method and drip control device |
JP2012190877A (en) * | 2011-03-09 | 2012-10-04 | Fujifilm Corp | Nanoimprint method and nanoimprint device for use therein |
JP5727905B2 (en) * | 2011-09-15 | 2015-06-03 | 富士フイルム株式会社 | Ink jet head discharge amount correction method, discharge amount correction device, and nanoimprint system |
JP5661666B2 (en) * | 2012-02-29 | 2015-01-28 | 株式会社東芝 | Pattern forming apparatus and semiconductor device manufacturing method |
JP6083203B2 (en) * | 2012-11-19 | 2017-02-22 | 大日本印刷株式会社 | Imprint resin dripping position determination method, imprint method, and semiconductor device manufacturing method |
-
2015
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2016
- 2016-11-22 KR KR1020187018568A patent/KR102102754B1/en active IP Right Grant
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TWI647089B (en) | 2019-01-11 |
JP6590667B2 (en) | 2019-10-16 |
KR102102754B1 (en) | 2020-04-21 |
KR20180087399A (en) | 2018-08-01 |
WO2017094563A1 (en) | 2017-06-08 |
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