TW202105470A - Imprint device and article manufacturing method - Google Patents
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Abstract
Description
本發明係有關於利用模在基板上形成壓印材的圖案的壓印裝置。The present invention relates to an imprinting device that uses a mold to form a pattern of an imprinting material on a substrate.
作為製造半導體裝置及MEMS等物品的方法,已知有利用模(模具)將在基板上的壓印材成形的壓印方法。壓印方法對基板上供應壓印材,使供應的壓印材與模接觸(壓印)。接著,在使壓印材與模接觸的狀態下使壓印材硬化後,從硬化後的壓印材將模分離(脫模),藉此在基板上形成壓印材的圖案。As a method of manufacturing articles such as semiconductor devices and MEMS, there is known an imprint method in which an imprint material on a substrate is formed with a mold (mold). The imprinting method supplies an imprinting material on the substrate, and the supplied imprinting material is brought into contact with the mold (imprinting). Next, after the imprint material is hardened in a state where the imprint material is in contact with the mold, the mold is separated (released) from the hardened imprint material, thereby forming a pattern of the imprint material on the substrate.
壓印裝置在使基板上的壓印材與模接觸後,在形成於模的凹凸形狀的圖案的凹部使壓印材充分填充後,使壓印材硬化。日本特開2013-069919號公報中揭示:在使壓印材與模接觸的期間,為了防止壓印材擴大至基板的外周部,對基板的外周部照射硬化壓印材的光的壓印裝置。After the imprinting device brings the imprinting material on the substrate into contact with the mold, the imprinting material is sufficiently filled in the recesses of the pattern formed in the concave and convex shape of the mold, and then the imprinting material is hardened. Japanese Patent Application Laid-Open No. 2013-069919 discloses an imprinting device that irradiates the outer periphery of the substrate with light that hardens the imprint in order to prevent the imprint from expanding to the outer periphery of the substrate while the imprint is in contact with the mold.
用於壓印裝置的模,其一部分的區域成為從周圍的區域突出的凸部(稱為台面部)。在模的台面部,形成在基板上形成的圖案(圖案區域)、或為未形成圖案的平面。因此,在使基板上的壓印材與模的台面部對向而使壓印材接觸台面部的表面的期間,壓印材從台面部露出,附著於台面部的側面,這有成為異物的產生原因之虞。日本特開2013-069919號公報記載的壓印裝置,雖能夠防止壓印材擴大至基板的外周部,但無法防止壓印材露出至模的台面部的側面(外側)。In the mold used for the imprinting device, a part of the area becomes a convex portion (referred to as a table portion) protruding from the surrounding area. On the table surface of the mold, a pattern (pattern area) formed on the substrate or a flat surface where no pattern is formed is formed. Therefore, while the imprinting material on the substrate is opposed to the table surface of the mold and the imprinting material is in contact with the surface of the table surface, the imprinting material is exposed from the table surface and adheres to the side surface of the table surface, which may cause foreign matter. Yu. The imprint device described in JP 2013-069919 A can prevent the imprint material from expanding to the outer periphery of the substrate, but it cannot prevent the imprint material from being exposed to the side surface (outside) of the table portion of the mold.
本發明的壓印裝置,係利用模在基板上形成壓印材的圖案的壓印裝置,具有:包含在使前述模的台面部接觸前述壓印材的狀態下的前述台面部的端,對包圍前述台面部的周邊區域,照射用來使前述壓印材的黏性增加的照射光的光學系統;在使前述模的台面部接觸前述基板上的壓印材的狀態下,控制前述光學系統,使得對從前述周邊區域之中的前述台面部的中心起算的距離互為不同的複數區域的前述照射光的照射時點互為不同的控制部。The imprinting device of the present invention is an imprinting device that uses a mold to form a pattern of an imprinting material on a substrate. The peripheral area of the table surface is irradiated with an optical system for irradiating light for increasing the viscosity of the imprinting material; while the table surface of the mold is brought into contact with the imprinting material on the substrate, the optical system is controlled so as to In the peripheral area, the plurality of areas whose distances from the center of the mesa surface portion are different from each other are different control units at the time of irradiation of the irradiation light.
以下,根據附加的圖式詳細說明本發明較佳的實施形態。此外,在各圖中,關於相同構件附加相同參照符號,省略重複的說明。Hereinafter, the preferred embodiments of the present invention will be described in detail based on the attached drawings. In addition, in each figure, the same reference numeral is attached to the same member, and repeated description is omitted.
(壓印裝置)
圖1為表示本實施形態中的壓印裝置1的構成的圖。利用圖1說明關於壓印裝置1的構成。在這裡,將配置基板10的面設為XY面,與其垂直的方向設為Z方向,如圖1所示決定各軸。壓印裝置1為使供應至基板上的壓印材與模8(模具)接觸,藉由對壓印材施予硬化用的能量,將轉印有模的凹凸圖案的硬化物的圖案形成的裝置。模也稱為模具、模板或底版。圖1的壓印裝置1使用於作為物品的半導體裝置等裝置的製造。這裡說明關於採用光硬化法的壓印裝置1。(Imprinting device)
FIG. 1 is a diagram showing the structure of an
壓印裝置為使被供應至基板上的壓印材與模接觸,藉由對壓印材施予硬化用的能量,將轉印有模的凹凸圖案的硬化物的圖案形成的裝置。因此,壓印裝置為利用模(模具)將基板上的壓印材成形的裝置。The imprinting device is a device that brings the imprinting material supplied to the substrate into contact with the mold, and applies hardening energy to the imprinting material to form a pattern of the hardened product to which the uneven pattern of the mold is transferred. Therefore, the imprinting device is a device that uses a mold (mold) to shape an imprinting material on a substrate.
壓印裝置1具備:保持模8並移動的模保持部3(壓印頭)、保持基板10並移動的基板保持部4(載台)、對基板上供應壓印材的供應部5(點膠機)。又,在壓印裝置1具備:照射使壓印材硬化的光9的光照射系統2、照射光35而攝像模與壓印材的接觸狀態的攝像部6、控制壓印裝置1的動作的控制部7。再來,壓印裝置1具備:檢出形成於模及基板的標記的檢出器12。The
基板保持部4具備:保持基板10的基板夾盤16、於XYZ座標系中至少在X軸方向及Y軸方向的2軸上控制基板10的位置的基板驅動機構17。又,基板保持部4的位置,利用設於基板保持部4的反射鏡18與干涉計19求出。利用編碼器取代反射鏡18、干涉計19來求出基板保持部4的位置也可以。The substrate holding unit 4 includes a
模保持部3藉由在以模夾盤11保持模8的狀態下設於模保持部的模驅動機構38(致動器)在上下方向(Z軸方向)移動。模保持部3藉由以模驅動機構38向下方(-Z方向)移動,讓模8的圖案區域8a與壓印材14接觸(壓印)。在用於壓印裝置1的模8的台面部8d(參照圖3),形成在基板上形成的凹凸圖案的反轉圖案(圖案區域)、或為未形成圖案的平面(平坦部)。在以下的說明中,僅就模的台面部為圖案區域8a的情形進行說明,但其為未形成圖案的平坦部也可以。壓印材硬化後,模保持部3藉由模驅動機構38向上方(+Z方向)移動,藉此模8的圖案區域8a從硬化後的壓印材分離(脫模)。The
再來,在模保持部3設置以劃分板41與模8劃分的空間13也可以,藉由調整空間13內的壓力能夠使壓印時及脫模時的模8變形。例如,在壓印時將空間13內的壓力提高,能夠使模8相對於基板10變形成凸形狀而使圖案區域8a與壓印材14接觸。Furthermore, the
檢出器12能夠檢出形成於模8的標記、及形成於基板10的標記。壓印裝置1能夠基於檢出器12的檢出結果求出模8與基板10的相對位置,藉由使模8與基板10的至少一者移動能夠將模8與基板10對位。The
為了在基板10上形成的複數射擊區域形成圖案,控制部7控制壓印裝置1的各機構的動作。又控制部7能夠控制模保持部3、基板保持部4、供應部5、光照射系統2及檢出器12。控制部7也可以設於壓印裝置1內、也可以設置於與壓印裝置1不同的處所並進行遠隔控制。In order to form a pattern on a plurality of shot areas formed on the
壓印材係使用因賦予硬化用的能量而硬化的硬化性組成物(也稱為未硬化狀態的樹脂)。作為硬化用的能量,可以使用電磁波、熱等。作為電磁波,例如,為該波長從10nm以上1mm以下的範圍內所選擇出的紅外線、可見光線、紫外線等光。The imprinting material uses a curable composition (also referred to as an uncured resin) that is cured by applying energy for curing. As energy for hardening, electromagnetic waves, heat, etc. can be used. As the electromagnetic wave, for example, light such as infrared rays, visible rays, and ultraviolet rays selected from the wavelength range of 10 nm or more and 1 mm or less.
硬化性組成物為藉由光的照射、或者藉由加熱而硬化的組成物。此時,因光而硬化的光硬化性組成物,至少含有聚合性化合物及光聚合起始劑,因應必要也可以含有非聚合性化合物或者溶劑。非聚合性化合物為:增感劑、氫供應體、內添型離型劑、界面活性劑、抗氧化劑、聚合物成份等的群中所選出的至少一種。The curable composition is a composition that is cured by light irradiation or by heating. At this time, the photocurable composition that is cured by light contains at least a polymerizable compound and a photopolymerization initiator, and may also contain a non-polymerizable compound or a solvent if necessary. The non-polymerizable compound is at least one selected from the group of sensitizers, hydrogen donors, internal release agents, surfactants, antioxidants, and polymer components.
壓印材係藉由旋塗機或狹縫塗佈機在基板上被賦予成膜狀。或著藉由液體噴射頭,以成為液滴狀、或著複數液滴連結起來的島狀或膜狀的方式被賦予在基板上也可以。壓印材的黏度(25℃時的黏度)為例如1mPa・s以上100mPa・s以下。The imprinting material is given a film shape on the substrate by a spin coater or a slit coater. Alternatively, the liquid ejecting head may be provided on the substrate in the shape of a droplet, or an island or film connected by a plurality of droplets. The viscosity of the embossing material (viscosity at 25°C) is, for example, 1 mPa·s or more and 100 mPa·s or less.
基板可以使用玻璃、陶瓷、金屬、半導體、樹脂等,因應必要,在該表面以與基板不同的其他材料所構成的構件來形成也可以。作為基板,具體上是矽晶圓、化合物半導體晶圓、石英玻璃等。The substrate may be made of glass, ceramic, metal, semiconductor, resin, etc., and if necessary, it may be formed on the surface with a member made of another material different from that of the substrate. As the substrate, specifically, silicon wafers, compound semiconductor wafers, quartz glass, and the like.
(第1實施形態)
圖2為表示利用壓印裝置1將基板10上的壓印材14成形的成形工程的流程圖。參照圖2說明光硬化法所致的壓印方法。(First Embodiment)
FIG. 2 is a flowchart showing a forming process of forming the
首先,在工程101中,將基板10搬入壓印裝置1內。藉由未圖示的基板搬送機構,基板10被搬入至基板保持部4的基板夾盤16。First, in the
接著在工程102中,供應部5將壓印材14供應至形成有壓印材的圖案的基板10上的射擊區域。在工程103中藉由使模8與基板10接近,使供應至基板10上的壓印材14與模8的圖案區域8a接觸(壓印工程)。Next, in the
此時,如圖3A所示,因為壓印材14與模8的浸潤性良好,確認到壓印材14從模8的圖案區域8a露出,附著在圖案區域8a的側面8b。在壓印材14附著於圖案區域8a的側面8b的狀態下將壓印材硬化的話,在將模8離型時,會形成如圖3B所示的形狀的壓印材14。此外,在圖3B中,省略了對應圖案區域8a的微細凹凸圖案。如圖3B所示形成壓印材14的突起形狀15的話,膜厚會變得不均勻,會有在後工程的蝕刻處理等中造成影響之虞。又,附著於圖案區域8a的側面8b的壓印材14的一部分在壓印中向基板10上落下,恐會成為異物。在基板10上若有異物存在,在壓印工程中模8如果接觸基板上的異物的話,形成於模8的圖案區域8a的微細圖案會有破壞的危險。因此,成為引起圖案形成不良的原因。At this time, as shown in FIG. 3A, since the
又,射擊區域的角部(角部、射擊區域為矩形時的角部)等的壓印材最後填充的處所,會有如圖3C所示在圖案區域8a的全部未填充壓印材而成為未填充8c的情形。在基板10上存在未填充8c的情形,壓印材14的膜厚也會變得不均勻,在後工程的蝕刻處理等會有造成影響之虞。在本實施形態中,藉由在圖案區域8a的側面8b降低壓印材附著,防止圖案形成的不良及模8的破壞,提供良率高的壓印裝置。In addition, the place where the imprinting material is last filled such as the corners of the shooting area (the corners of the shooting area is the corner when the shooting area is rectangular) will have all the unfilled imprinting materials in the
其中,本實施形態的壓印裝置1,在工程103中使圖案區域8a接觸壓印材14時,藉由工程104對圖案區域8a的外周部照射照射光50,防止了壓印材14的露出。工程104,在圖案區域8a的一部分與壓印材14接觸,工程103結束前,照射照射光50。However, in the
在工程103中,壓印結束並對圖案區域8a的圖案填充壓印材後,在工程105中進行模8與基板10的對位。例如,以檢出器12檢出形成於模8的標記及來自形成於基板10的標記的光,藉此進行模8與基板10的對位。在形成有微細圖案的模8的圖案區域8a的中心附近不照射照射光50。如同上述藉由將照射光50照射至模8的側面8b,防止了壓印材14附著於側面8b,就位於模8的中心部的壓印材14而言,不會使黏性發生變化,能夠維持向微細圖案的填充性。In the
在工程104中,壓印材14的黏性雖變化但沒有硬化。如同先前技術文獻為了防止壓印材14附著在模8的側面8b,若使模8的側面8b附近的壓印材14硬化的話,進行模8與基板10的對位會變得困難。又,在接近模8的側面8b的圖案區域8a也配置微細構造時,壓印材14填至微細構造前就硬化了,成為使未填充缺陷增加的原因。重合精度的降低及未填充缺陷的增加會造成良率降低的危險。In the
在工程106實施重合精度判定,若重合精度滿足判定值,在工程107中以模8與壓印材14接觸的狀態使壓印材14硬化。使壓印材14硬化後,在工程108中,從硬化後的壓印材14將模8分離(脫模工程)。在工程106重合精度判定若未滿足判定值,持續工程105的模與基板的對位工程。在工程106未滿足判定值時,強制地進入下個工程進行處理也可以。The overlap accuracy determination is performed in the
在工程108將模8從基板上的壓印材分離後,在工程109中,進行對在基板10上指定的射擊區域是否結束壓印處理的結束判定。在工程109結束壓印處理時,在工程110中將基板10搬出至壓印裝置1外。壓印處理未結束時,回到工程102,對下個壓印位置(射擊區域)供應壓印材14,直到壓印處理結束為止重複各工程。After the
接著,詳細說明關於在工程104進行的光的照射。圖4為說明在工程104進行的光的照射的圖。如圖4A所示,將照射光50照射至包含模8的圖案區域8a的外周部即側面8b的周邊區域(照射區域52)。照射光50只要是壓印材14進行聚合反應的光即可,並不限於紫外光。因照射光50而壓印材14硬化後,無法在工程105進行對位。因此,在工程104進行的光的照射,是照射以不會使壓印材14硬化,而將圖案區域8a附近的壓印材14的黏性提高的程度的光。照射光50考慮到壓印材14的材料的性質等,可以適當地求出照射光的波長、照射時間、強度等。Next, the light irradiation performed in the
圖4B為表示通過模8在基板10上照射照射光50的照射區域52與模8的側面8b(外周部)的關係的圖。如圖4所示,照射光50的照射區域52為包含模8的側面8b的區域。如圖4所示藉由設定照射區域52,能夠防止在壓印時壓印材14從圖案區域8a露出。FIG. 4B is a diagram showing the relationship between the
使圖5A所示的模8的圖案區域8a與供應至基板10上的壓印材14接觸時,有使模8的圖案區域8a相對於基板10變形成凸形狀並與壓印材14接觸的情形。如圖5B所示,模與壓印材接觸的區域,在模8的中心附近的圖案區域8a與壓印材14接觸後,向圖案區域8a的外側(外周部)開始擴展。如圖5C所示,照射照射光50的區域內的壓印材14的氣液界面14b,因照射光50而開始聚合反應,氣液界面14b的黏性增加。因圖案區域8a的外周部的壓印材14的黏性增加,向圖案區域8a的外側擴大的壓印材14的氣液界面14b的移動速度降低,能夠防止壓印材附著至模8的側面8b。此時,因為壓印材14的黏性變化所需的照射光50的強度、及照射光50的照射時點,因壓印材14的種類等而有所不同,必須根據特別實驗探索條件。When the
利用圖6說明關於用來將照射光50照射至圖案區域8a的外周部(包含側面8b的區域)的光學系統的一例。圖6表示用來照射照射光50的光學系統的示意圖。準備壓印材14會進行聚合反應的波長的照射光光源51。照射光光源51為了能使壓印材14聚合反應成所期望的黏度而選擇能得到必要的光輸出者,例如,以燈、雷射二極體、LED等構成。來自照射光光源51的光藉由光學元件54a導至光調變元件53(空間光調變元件)。作為本實施形態的光調變元件53,表示使用數位微反射鏡裝置(以下DMD)之例。不過,作為光調變元件53,並不限於DMD,能夠使用LCD裝置及LCOS裝置等其他的元件。壓印裝置1,藉由在照射光光源51與基板10之間使用光調變元件53,能夠將照射光50的照射區域52及光強度在基板上的任意處所設定。又,經由光調變元件53控制照射區域52及光強度的照射光50,藉由光學元件54b來調整投影至模8及基板10的倍率。An example of an optical system for irradiating the irradiated light 50 to the outer peripheral portion (region including the
再來更詳細說明關於第1實施形態中的上述工程103、及工程104。Next, the above-mentioned
在工程103中,使模8接觸壓印材14時,壓印材14的氣液界面14b如圖7所示以圓狀或與其類似的形狀向外側擴大。也就是說,模8與壓印材14的接觸區域,以從圖案區域8a的中心附近擴大的方式變化。一般因為模8的圖案區域8a為矩形,照射區域52也是沿著矩形的外周部的區域。因此,壓印材14的氣液界面14b到達照射光50的照射區域52(圖案區域8a的外周部)的時點在照射區域52的各位置不同。In the
另一方面,在工程104中,若相對於氣液界面14b到達照射區域52,照射光50的照射時點較早,在接近模8的側面8b的圖案區域8a會有產生未填充缺陷之虞。又,若相對於氣液界面14b到達照射區域52,照射光50的照射時點較晚,壓印材14會有露出至模8的側面8b並附著之虞。因此,用來防止壓印材14的露出的照射光50,必須在壓印工程的適切時點照射。On the other hand, in the
在這裡,於第1實施形態中,在工程104中如圖8A所示將照射區域52分割成複數小區域52a、52b、…、52n。而且,對於各個小區域,變更照射時點、或照射強度的至少一者照射照射光50。藉由使用上述光調變元件53,能夠設定相對於照射區域52的照射光50的照射時點、照射區域及照射強度。在圖8A中,雖表示將照射區域52分割成縱方向8個、橫方向6個的各個正方形的小區域之例,但分割個數不限於此,可以設定成任意數。又,各個小區域的形狀可以設定成長方形、三角形及其他任意形狀。Here, in the first embodiment, in the
第1實施形態中,判定氣液界面14b到達照射區域52的各小區域52a、52b、…、52n的時點,因應判定結果,對各個小區域變更照射光50的照射時點。氣液界面14b到達各小區域的時點的判定,能夠基於攝像部6的攝像結果即時判定。或者,也可以事先求出氣液界面14b到達各小區域的時點,因應該結果,對各個小區域決定照射光50的照射時點。In the first embodiment, the time point when the gas-
如圖7所示,將氣液界面14b從圖案區域8a的中心向外側擴大時的,對照射區域52的小區域的照射光50的照射時點的圖表示於圖8B。為了說明的簡略化,照射區域52之中限定成圖案區域8a的左邊,表示小區域52a、52b、…、52h各自的照射時點圖表。橫軸表示時間。如圖8B所示,在開始壓印工程後,氣液界面14b越早到達的小區域照射時點越早。As shown in FIG. 7, when the gas-
壓印工程開始後,從圖案區域8a的中心附近擴大的氣液界面14b,在時間T1到達小區域52d及小區域52e。此時,圖6的控制部55控制光調變元件53,使照射光50照射小區域52d及小區域52e。接著,氣液界面14b,在時間T2到達小區域52c及小區域52f。此時,控制部55控制光調變元件53,使照射光50照射小區域52c及小區域52f。接著,氣液界面14b,在時間T3到達小區域52b及小區域52g。此時,控制部55控制光調變元件53,使照射光50照射小區域52b及小區域52g。最後,氣液界面14b,在時間T4到達小區域52a及小區域52h。此時,控制部55控制光調變元件53,使照射光50照射小區域52a及小區域52h。After the imprinting process is started, the gas-
對各小區域照射照射光50的時間可以任意設定。在圖8B所示的例中,對各小區域照射照射光50的時間設為ΔT。又,對各小區域照射照射光的強度設為相同。The time for irradiating the
取代照射光50的照射時點,改變照射強度也可以。例如,如圖9A所示,改變照射區域52的各小區域52a、52b、…、52h的照射強度也可以。橫軸表示時間、縱軸表示各小區域的照射強度。將對氣液界面14b最早到達的小區域的照射光50的照射強度增強,以氣液界面14b到達的順序將照射強度依序減弱。圖9A在橫軸表示時間,縱軸表示對各小區域(小區域52a~小區域52h)的照射光50的照射強度。Instead of the irradiation timing of the
在圖8中,雖然照射區域52之中限定於圖案區域8a的左邊的小區域進行說明,但實際上在全部的小區域52a、52b、…、52n中,決定照射時點、或照射強度。藉由以此方式分割照射區域,能夠因應模的圖案區域8a與基板上的壓印材14間的接觸區域的擴展在最適的時點照射照射光50。In FIG. 8, although the small area limited to the left of the
(第2實施形態)
第2實施形態說明關於對第1實施形態說明的照射區域52的各小區域(小區域52a~52n)變更照射光50的照射量的情形。(Second Embodiment)
The second embodiment describes a case where the irradiation amount of the
第1實施形態說明的氣液界面14b通過照射區域52的各小區域52a、52b、…、52n時的速度,亦即能量不同。因此,第2實施形態中,因為將氣液界面14b擴大時的黏性更正確地控制,在各小區域改變照射光50的照射量,照射照射光50。The gas-
如圖7所示,將氣液界面14b從圖案區域8a的中心向外側擴大時的,對照射區域52的小區域的照射光50的照射時點的圖表示於圖9A、圖9B。為了說明的簡略化,照射區域52之中限定成圖案區域8a的左邊,表示小區域52a、52b、…、52h各自的照射時點圖表。橫軸表示時間、縱軸表示各小區域的照射強度。圖9A為照射時間維持一定但改變照射強度之例、圖9B為照射強度維持一定但改變照射時間之例。如圖9所示,在開始壓印工程後,氣液界面14b越早到達的小區域照射量越多。As shown in FIG. 7, when the gas-
如圖7所示,氣液界面14b從圖案區域8a的中心向外側擴大時,一般設定成接近中心的小區域52d、52e的曝光量多、端部的小區域52a、52h的曝光量少。再來,除了各小區域的曝光量的變更以外,如第1實施形態所示,變更各小區域的照射時點也可以。As shown in FIG. 7, when the gas-
在圖9中,雖然照射區域52之中限定於圖案區域8a的左邊的小區域進行說明,但實際上在全部的小區域52a、52b、…、52n中,決定照射強度。藉由以此方式分割照射區域52,能夠因應模的圖案區域8a與基板上的壓印材14間的接觸區域的擴展以最適的曝光量照射照射光50。In FIG. 9, although the small area limited to the left of the
(第3實施形態)
第3實施形態說明關於基於第1實施形態說明的照射區域52的各小區域(小區域52a~52n)、與射擊區域的中心位置61的距離,對各小區域變更照射光50的照射時點的情形。(Third Embodiment)
The third embodiment explains how the small areas (
如圖7所示,將氣液界面14b從圖案區域8a的中心向外側擴大時的,對照射區域52的小區域的照射光50的照射時點的圖表示於圖10B。為了說明的簡略化,照射區域52之中限定成圖案區域8a的左邊,表示小區域52a、52b、…、52h各自的照射時點圖表。橫軸表示時間。其中,將射擊區域的中心位置61與各小區域52a、52b、…、52h的距離設為La、Lb、…、Lh。As shown in FIG. 7, when the gas-
第3實施形態中,將壓印工程的開始時間設為0,將各小區域的照射時點以函數Tx=f(Lx)來決定。在這裡,x=a、b、…、h。也就是說,第3實施形態的各小區域的照射時點因應距離而決定。例如,使用比例常數K,能夠將照射時點以Tx=K×Lx決定。又,以一次函數、或二次以上的高次函數來決定照射時點也可以。如圖10B所示,在開始壓印工程後,一般射擊區域的中心位置61、與照射區域52的各小區域間的距離越短,照射時點越早。圖10B時序流程雖將壓印工程的開始時間設為0進行說明,但將模8與壓印材14接觸的時點設為時間0也可以。In the third embodiment, the start time of the imprint process is set to 0, and the irradiation time of each small area is determined by the function Tx=f(Lx). Here, x=a, b, ..., h. That is, the irradiation timing of each small area in the third embodiment is determined according to the distance. For example, using the proportional constant K, the irradiation time point can be determined by Tx=K×Lx. In addition, the irradiation time point may be determined by a linear function or a higher-order function of the second order or more. As shown in FIG. 10B, after the imprinting process is started, the shorter the distance between the
再來,以上述距離La、Lb、…、Lh為基礎,與第2實施形態說明的方法一樣變更照射強度及照射時間也可以。例如,因應距離改變照射強度時,距離越短能夠使照射強度越大。又,因應距離改變照射時間時,距離越短能夠使照射時間越長。又,與第2實施形態所示的方法一樣變更照射量也可以。又,改變照射時點、照射強度、或照射量的兩者也可以。Furthermore, based on the aforementioned distances La, Lb, ..., Lh, the irradiation intensity and the irradiation time may be changed in the same manner as in the method described in the second embodiment. For example, when changing the irradiation intensity according to the distance, the shorter the distance, the greater the irradiation intensity. In addition, when changing the irradiation time according to the distance, the shorter the distance, the longer the irradiation time. In addition, the irradiation amount may be changed in the same way as the method shown in the second embodiment. In addition, both of the irradiation time point, irradiation intensity, or irradiation amount may be changed.
在圖10中,雖然照射區域52之中限定於圖案區域8a的左邊的小區域進行說明,但實際上在全部的小區域52a、52b、…、52n中,因應與中心位置61的距離決定照射時點、或照射量。此外,照射區域52的小區域52a、52b、…、52n的分割個數、及分割形狀非限定於圖10A,與前述一樣。藉由以此方式分割照射區域52,能夠因應射擊區域的中心與各射擊區域的距離以最適的曝光量照射照射光50。第3實施形態的情形,即便沒有攝像部6的攝像結果時,也能夠從射擊區域的形狀控制照射時點。In FIG. 10, although the small area limited to the left of the
(第4實施形態)
第4實施形態說明關於基於第1實施形態說明的照射區域52的各小區域(小區域52a~52n)、與模8的壓印中心位置62的距離,對各小區域變更照射光50的照射時點的情形。取代照射時點,改變照射強度也可以。其中,模8的壓印中心位置62表示模8的圖案區域8a與基板上的壓印材最早接觸的位置。一般來說,雖模8的圖案區域8a的中心最早與壓印材接觸,但例如,在包含基板的外周的射擊區域(周邊射擊、邊緣射擊)形成圖案時,不限於圖案區域8a的中心。(Fourth Embodiment)
The fourth embodiment explains about the small areas (
圖11A表示第4實施形態的照射區域52與模8的壓印中心位置62的圖。對此時的照射區域52的小區域的照射光的照射時點表示於圖11B。為了說明的簡略化,照射區域52之中,限定成圖案區域8a的左邊,表示小區域52a、52b、…、52h各自的照射時點圖表。橫軸表示時間。其中,將壓印中心位置62與各小區域52a、52b、…、52h的距離設為La、Lb、…、Lh。FIG. 11A shows a view of the
第4實施形態中,將壓印工程的開始時間設為0,將各小區域的照射時點以函數Tx=f(Lx)來決定。在這裡,x=a、b、…、h。也就是說,第4實施形態的各小區域的照射時點與第3實施形態一樣因應距離而決定。如圖11B所示,在開始壓印工程後,一般壓印中心位置62、與照射區域52的各小區域間的距離越短,照射時點越早。圖11B的時序流程雖將壓印工程的開始時間設為0進行說明,但將模8與壓印材14接觸的時點設為時間0也可以。In the fourth embodiment, the start time of the imprint process is set to 0, and the irradiation time of each small area is determined by the function Tx=f(Lx). Here, x=a, b, ..., h. That is, the irradiation timing of each small area in the fourth embodiment is determined in accordance with the distance as in the third embodiment. As shown in FIG. 11B, after the imprinting process is started, generally, the shorter the distance between the
再來,以上述距離La、Lb、…、Lh為基礎,與第2實施形態說明的方法一樣變更照射強度及照射時間也可以。例如,因應距離改變照射強度時,距離越短能夠使照射強度越大。又,因應距離改變照射時間時,距離越短能夠使照射時間越長。又,與第2實施形態所示的方法一樣變更照射量也可以。又,改變照射時點、照射強度、或照射量的兩者也可以。Furthermore, based on the aforementioned distances La, Lb, ..., Lh, the irradiation intensity and the irradiation time may be changed in the same manner as in the method described in the second embodiment. For example, when changing the irradiation intensity according to the distance, the shorter the distance, the greater the irradiation intensity. In addition, when changing the irradiation time according to the distance, the shorter the distance, the longer the irradiation time. In addition, the irradiation amount may be changed in the same way as the method shown in the second embodiment. In addition, both of the irradiation time point, irradiation intensity, or irradiation amount may be changed.
在圖11中,雖然照射區域52之中限定於圖案區域8a的左邊的小區域進行說明,但實際上在全部的小區域52a、52b、…、52n中,因應與壓印中心位置62的距離決定照射時點、或照射量。此外,照射區域52的小區域52a、52b、…、52n的分割個數、及分割形狀非限定於圖11A,與前述一樣。又,在包含基板的外周的射擊區域形成圖案時,因為壓印材不接觸對應基板10的外側的區域的圖案區域8a,壓印材不會有接觸模8的側面8b的危險。因此,在基板10的外側的區域的照射區域52的小區域不照射照射光50也可以。In FIG. 11, although the
藉由以此方式分割照射區域52,能夠因應射擊區域的中心與各射擊區域的距離以最適的曝光量照射照射光50。第4實施形態的情形,即便沒有攝像部6的攝像結果時,也能夠從射擊區域的形狀控制照射時點。By dividing the
(第5實施形態)
第5實施形態說明關於與上述實施形態說明的照射區域52的各小區域不同的形狀的照射區域52的小區域的情形。第5實施形態如圖12A所示,將照射區域52分割成縱方向(y方向)的小區域52y、及橫方向(x方向)的小區域52x,對各個小區域變更照射時點、或照射強度照射照射光50。(Fifth Embodiment)
The fifth embodiment describes the case of the small areas of the
圖12A表示第5實施形態的照射區域52的圖。對此時的照射區域52的小區域52x、52y的照射光50的照射時點表示於圖12B。圖12B表示各個小區域52x、52y的照射時點圖表,橫軸表示時間。其中,將射擊區域的中心位置、或壓印中心位置、與小區域52y及小區域52x的距離分別設為Ly、Lx。如圖12A所示,距離Ly<Lx時,一般對小區域52y的照射時點比小區域52x還早。FIG. 12A shows a view of the
第5實施形態中,照射光50能夠以由實驗等預先決定的時點,分別進行縱方向的小區域52y、及橫方向的小區域52x的照射。或者,可以利用攝影機等攝像部6觀察上述實施形態說明的氣液界面14b分別到達縱方向的小區域52y、及橫方向的小區域52x的時點,基於該結果決定照射光50的照射時點。或者,能夠利用射擊區域的中心位置、從壓印中心位置起算的距離Ly、Lx,以求出第3實施形態所示的照射時點的方法,決定照射光50的照射時點。In the fifth embodiment, the
再來,以上述距離Lx、Ly為基礎,與第2實施形態說明的方法一樣變更照射強度及照射時間也可以。例如,因應距離改變照射強度時,距離越短能夠使照射強度越大。又,因應距離改變照射時間時,距離越短能夠使照射時間越長。又,與第2實施形態所示的方法一樣變更照射量也可以。又,改變照射時點、照射強度、或照射量的兩者也可以。Furthermore, based on the above-mentioned distances Lx and Ly, the irradiation intensity and irradiation time may be changed in the same manner as in the method described in the second embodiment. For example, when changing the irradiation intensity according to the distance, the shorter the distance, the greater the irradiation intensity. In addition, when changing the irradiation time according to the distance, the shorter the distance, the longer the irradiation time. In addition, the irradiation amount may be changed in the same way as the method shown in the second embodiment. In addition, both of the irradiation time point, irradiation intensity, or irradiation amount may be changed.
此外,縱方向的小區域52y、及橫方向的小區域52x的分割方法,不限於圖12A所示的方法,例如,如圖12C所示,以成為縱方向的小區域52y、及橫方向的小區域52x的方式分割也可以。例如,以縱方向的小區域52y與橫方向的小區域52x的照射區域的面積成為相同的方式分割也可以。In addition, the method of dividing the
藉由以此方式分割照射區域52,能夠簡易地因應射擊區域的中心與各射擊區域的距離以最適的曝光量照射照射光50。By dividing the
(第6實施形態)
第6實施形態說明關於與上述實施形態說明的照射區域52的各小區域不同的形狀的照射區域52的小區域的情形。第6實施形態如圖13A所示,將在第1實施形態的圖8說明的照射區域52的小區域52a~52n的各者,在讓照射區域52又從射擊區域的中心朝向外部的方向上分割。例如,如圖13A所示將小區域52c從射擊區域的中心分割成3個小區域52c1、52c2、52c3。分割個數為任意,各個小區域的形狀可以任意設定。對於各個小區域,變更照射時點、或照射強度照射照射光50。(Sixth Embodiment)
The sixth embodiment describes the case of the small areas of the
圖13A表示第6實施形態的照射區域52的圖。對此時的照射區域52的小區域52c1、52c2、52c3的照射光50的照射時點表示於圖13B。圖13B表示各個小區域52c1、52c2、52c3的照射時點圖表,橫軸表示時間。如圖13B所示,例如,從射擊區域的內側的小區域開始依序照射照射光50。在圖13中,雖就圖8所示的小區域52c進行說明,但就其他小區域也同樣從內側依序照射照射光50,能夠照射照射區域52的全部小區域。FIG. 13A shows a view of the
又,第6實施形態不限於第1實施形態,從第2實施形態到第5實施形態所示的任何照射區域52的分割方法也能夠適用。In addition, the sixth embodiment is not limited to the first embodiment, and any method of dividing the
藉由以此方式分割照射區域52,能夠因應模8的圖案區域8a與壓印材14的接觸區域的擴展(氣液界面14b的移動)以最適的曝光量照射照射光50。By dividing the
(第7實施形態)
在第7實施形態中,藉由降低在圖案區域8a的側面8b的壓印材附著,防止圖案形成的不良及模8的破壞,提供良率高的壓印裝置。又,提供一種壓印裝置,對容易產生未填充的部分不使壓印材的填充性降低而形成壓印材的圖案。(Seventh embodiment)
In the seventh embodiment, by reducing the adhesion of the imprint material on the
在這裡,本實施形態的壓印裝置1,在圖2的工程104中,也照射照射光50至接近側面8b的射擊區域(圖案區域8a)的角部的話,壓印材14變得難以填充角部,有產生未填充缺陷之虞。在這裡,第7實施形態的壓印裝置1,在工程104中降低圖案區域8a的角部(第2區域)中的照射光50強度。Here, in the
詳細說明關於在工程104進行的光的照射。圖4為說明在工程104進行的光的照射的圖。如圖4A所示,將照射光50照射至包含模8的圖案區域8a的外周部即側面8b的周邊區域(照射區域52)。照射光50只要是壓印材14進行聚合反應的光即可,並不限於紫外光。因照射光50而壓印材14硬化後,無法在工程105進行對位。因此,在工程104進行的光的照射,是照射以不會使壓印材14硬化,而將圖案區域8a附近的壓印材14的黏性提高的程度的光。照射光50考慮到壓印材14的材料的性質等,可以適當地決定照射光的波長、照射時間、強度等。The light irradiation performed in the
如圖14A所示,圖案區域8a的角部難以填充壓印材。因此,在第1實施形態中,不將照射光50對圖4B所示的照射區域52均勻地照射,而降低相當於角部的位置的照射光50的強度。As shown in FIG. 14A, it is difficult to fill the embossing material at the corners of the
在這裡,於第7實施形態中,如圖14B所示將照射區域52分割成複數小區域。且,對於各個小區域變更照射強度照射照射光50。藉由使用後述光調變元件53,能夠設定相對於照射區域52的照射光50的照射區域及照射強度。在圖14B中,雖表示將照射區域52分割成縱方向8個、橫方向6個的各個正方形的小區域之例,但分割個數不限於此,可以設定成任意數。又,各個小區域的形狀可以設定成長方形、三角形及其他任意形狀。Here, in the seventh embodiment, the
照射區域52設有圖14B所示的複數小區域時,例如使照射光50的強度在小區域52a、52b、52c、52d(第2區域)低於其他區域(第1區域)。此時,控制部55控制光調變元件53,使通過小區域52a、52b、52c、52d照射的照射光的強度低於通過其他區域照射的照射光50的強度。又,控制部55控制光調變元件53,不照射照射光50至小區域52a、52b、52c、52d也可以。其中,使模與壓印材接觸時,將壓印材到達模的圖案區域的側面的時間比第1區域還晚的區域設為第2區域。When the
以此方式將照射區域分割,藉由在圖案區域8a的角部與其他區域設定照射光50的強度分佈,能夠降低壓印材的露出,防止向圖案區域8a的角部的填充性降低。In this way, the irradiation area is divided, and by setting the intensity distribution of the
(第8實施形態)
壓印材的填充性受到形成於圖案區域8a的圖案的寬度影響。例如,如同對準標記,與其他凹凸形狀相比,凹部的寬度較大的圖案難以填充壓印材。在這裡,第8實施形態的壓印裝置1,就在照射區域52形成對準標記等凹部的寬度大的圖案的區域而言,使照射光50的強度低於其他區域。(Eighth Embodiment)
The filling property of the imprint material is affected by the width of the pattern formed in the
如圖15A所示,形成圖案區域8a的對準標記的區域難以填充壓印材。因此,在第2實施形態中,不將照射光50對圖4B所示的照射區域52均勻地照射,而降低相當於對準標記的位置的照射光50強度。As shown in FIG. 15A, it is difficult to fill the imprint material in the area where the alignment mark of the
在這裡,於第8實施形態中,如圖15B所示將照射區域52分割成複數小區域。且,對於各個小區域變更照射強度照射照射光50。藉由使用後述光調變元件53,能夠設定相對於照射區域52的照射光50的照射區域及照射強度。在圖15B中,雖表示將照射區域52分割成縱方向8個、橫方向6個的各個正方形的小區域之例,但分割個數不限於此,可以設定成任意數。又,各個小區域的形狀可以設定成長方形、三角形等及其他任意形狀。Here, in the eighth embodiment, the
照射區域52設有圖15B所示的複數小區域時,例如使照射光50的強度在小區域52e、52f(第2區域)低於其他區域(第1區域)。此時,控制部55控制光調變元件53,使小區域52e、52f的照射光50的強度低於其他區域。又,控制部55控制光調變元件53,不照射照射光50至小區域52e、52f也可以。其中,使模與壓印材接觸時,將壓印材到達模的圖案區域的側面的時間比第1區域還晚的區域設為第2區域。特別是將包含形成對準標記的區域之區域設為第2區域。When the
以此方式將照射區域分割,藉由在圖案區域8a的對準標記的區域與其他區域設定照射光50的強度分佈,能夠降低壓印材的露出,並防止向圖案區域8a的對準標記的填充性降低。不限於對準標記,對在模形成的凹部的圖案的寬度與其他寬度相比形成較大的圖案的區域,使照射光50的強度降低也可以。藉此,能夠保持壓印材的填充性,並降低壓印材的露出。By dividing the irradiation area in this way, by setting the intensity distribution of the
(第9實施形態)
第7實施形態與第8實施形態的壓印裝置,說明關於因應對圖案區域8a難以填充壓印材的區域的有無設定照射光50的強度分佈的情形。第9實施形態的壓印裝置,說明關於因為壓印材容易從圖案區域8a露出的區域(壓印材到達模的圖案區域的側面的時間比其他還早的區域)的有無設定照射光50的強度分佈的情形。(Ninth Embodiment)
The imprint apparatuses of the seventh embodiment and the eighth embodiment describe the case where the intensity distribution of the
壓印材的露出容易性(壓印材到達模的圖案區域的側面的時間的差異),在圖案區域8a形成的圖案方向受到影響。例如,如圖16所示,壓印材14的液滴與模8接觸後沿著在圖案區域8a形成的凹凸圖案的圖案方向壓印材容易擴大。因此,相對於圖案方向交叉的方向存在有圖案區域8a的端(側面8b)的情形,相較於在沿著圖案方向的方向存在有圖案區域8a的端的情形,壓印材容易露出。其中,圖案方向表示線狀凹凸圖案延伸的方向。當複數方向混合時,有將最接近圖案區域8a的端的圖案形狀設為圖案方向、從包含於區域內的凹凸形狀的平均值求出圖案方向的方法。The ease of exposure of the imprint material (the difference in time for the imprint material to reach the side surface of the pattern area of the mold) affects the direction of the pattern formed in the
如圖16所示,圖案區域8a的端沿著y方向的情形,與模8接觸的壓印材,相較於圖案方向為y方向的區域(第2區域),圖案方向沿著x方向的區域(第1區域)者較容易露出。因此,藉由相對於壓印材容易露出的區域使照射光50的強度提高,來設定照射光50的強度分佈也可以。又,藉由相對於壓印材容易露出的區域使照射光50的強度變小,來設定照射光50的強度分佈也可以。除了圖案方向以外,根據圖案密度設定照射光50的強度分佈也可以。其中,使模與壓印材接觸時,將壓印材到達模的圖案區域的側面的時間比第1區域還晚的區域設為第2區域。As shown in FIG. 16, when the end of the
根據圖案方向,於圖案區域的端(射擊區域的端)的壓印材的露出容易性、及填充性有所不同。因此,藉由因應圖案方向設定照射光50的強度分佈,能夠保持壓印材的填充性,並降低壓印材的露出。Depending on the pattern direction, the ease of exposure and filling of the imprint material at the end of the pattern area (the end of the shooting area) are different. Therefore, by setting the intensity distribution of the
(第10實施形態)
第10實施形態的壓印裝置,說明關於因應壓印材容易從圖案區域8a露出的區域的有無設定照射光50的強度分佈的情形。(Tenth Embodiment)
The imprint apparatus of the tenth embodiment will describe the case where the intensity distribution of the
壓印材的露出容易性,於接近射擊區域的端的壓印材的液滴的配置受到影響。例如,如圖17所示,壓印材14的液滴的滴下位置與圖案區域8a的端(射擊區域的端)的距離越短,壓印材越容易露出。又,配置在基板上的壓印材14的液滴的密度越高的區域,壓印材越容易露出。The ease of exposure of the imprint material is affected by the placement of droplets of the imprint material near the end of the shot area. For example, as shown in FIG. 17, the shorter the distance between the dropping position of the droplet of the
在這裡,照射光50的照射強度,以使壓印材14的液滴的滴下位置與射擊區域的端的距離越短的區域(第1區域)比其他區域(第2區域)還大的方式設定分佈。又,藉由使照射光50對於壓印材難以露出的區域(壓印材到達模的圖案區域的側面的時間比其他還晚的區域)的強度降低,來設定照射光50的強度分佈也可以。同樣,照射光50的照射強度,能夠以使壓印材14的液滴的密度高的區域(第1區域)比其他區域(第2區域)還大的方式設定分佈。取代液滴的密度,基於與壓印材之量有關的資訊設定照射光50的照射強度的分佈也可以。其中,使模與壓印材接觸時,將壓印材到達模的圖案區域的側面的時間比第1區域還晚的區域設為第2區域。Here, the irradiation intensity of the
根據供應至基板上的射擊區域的壓印材14的液滴的配置,在圖案區域的端(射擊區域的端)的壓印材的露出容易性、及填充性有所不同。因此,藉由因應壓印材的液滴的滴下位置與射擊區域的端為止的距離、及液滴的密度設定照射光50的強度分佈,能夠保持壓印材的填充性,並降低壓印材的露出。Depending on the arrangement of the droplets of the
(第11實施形態)
第11實施形態的壓印裝置,說明關於因為壓印材容易從圖案區域8a露出的區域的有無設定照射光50的強度分佈的情形。(Eleventh embodiment)
The imprint apparatus of the eleventh embodiment will describe the case where the intensity distribution of the irradiated
壓印材的露出容易性,於接近射擊區域的端的壓印材的液滴的配置與形成於模8的圖案區域8a的形狀受到影響。射擊區域的端的形狀不限於如圖18所示的直線。壓印材的露出容易性,於供應至基板上的壓印材的液滴之中,接近射擊區域的端的液滴的滴下位置與射擊區域的端的距離賦予影響。The ease of exposure of the imprint material is affected by the arrangement of the droplets of the imprint material near the end of the shot area and the shape of the
例如,即便射擊區域的端的形狀為如圖18所示的情形,壓印材14的液滴的滴下位置與射擊區域的端的距離越短,壓印材越容易露出。如圖18所示,從射擊區域的端開始的壓印材的液滴的滴下位置從液滴15(a)依15(a)、15(b)、15(c)、15(d)的順序相對於射擊區域的端的液滴的滴下位置變遠。在這裡,以使壓印材的液滴的滴下位置與射擊區域的端的距離越短的區域(第1區域)相較於其他區域(第2區域)照射光50的照射強度變高的方式設定強度分佈。其中,使模與壓印材接觸時,將壓印材到達模的圖案區域的側面的時間比第1區域還晚的區域設為第2區域。For example, even if the shape of the end of the shot area is as shown in FIG. 18, the shorter the distance between the drop position of the
根據供應至基板上的射擊區域的壓印材14的液滴的配置與圖案區域的端的形狀,在圖案區域的端的壓印材的露出容易性有所不同。因此,藉由因應壓印材的液滴的滴下位置與射擊區域的端為止的距離設定照射光50的強度分佈,能夠保持壓印材的填充性,並降低壓印材的露出。The ease of exposure of the imprint material at the end of the pattern area differs according to the arrangement of the droplets of the
(第12實施形態)
第12實施形態的壓印裝置,說明關於因為壓印材容易從圖案區域8a露出的區域的有無設定照射光50的強度分佈的情形。(Twelfth Embodiment)
The imprint apparatus of the twelfth embodiment will describe a case where the intensity distribution of the irradiated
壓印材的露出容易性,在從基板上的壓印材14與圖案區域8a開始接觸的時間開始,到將壓印材硬化為止的壓印時間受到影響。如圖19A的虛線所示,模8的圖案區域8a與射擊區域上的壓印材以從中心擴大的方式接觸時,依液滴15(e)、15(f)、15(g)的順序壓印時間變長。因此,從射擊區域的端起算的液滴的位置、與壓印時間不同時,因應壓印時間與射擊區域的端的位置設定照射光50的強度分佈。The ease of exposure of the imprint material is affected by the imprint time from the time when the
如圖19B所示,藉由將照射區域52在從射擊區域的中心朝向外側的方向上分割,能夠因應圖案區域8a的形狀設定照射光50的分佈。照射區域52的分割個數為任意,各個小區域的形狀也可以任意設定。能夠一致於射擊區域(圖案區域8a)的外形的圖案設定照射光50的照射強度分佈。又,能夠因應壓印材與模8a的圖案區域8a接觸的壓印時間設定照射光50的照射強度分佈。例如,能夠使以圖19B所示的照射區域52的斜線表示的區域(第1區域)的照射強度比其他區域(第2區域)還大。其中,使模與壓印材接觸時,將壓印材到達模的圖案區域的側面的時間比第1區域還晚的區域(壓印時間短的區域)設為第2區域。As shown in FIG. 19B, by dividing the
因此,藉由因應模8的圖案區域8a的形狀及壓印時間設定照射光50的強度分佈,能夠保持壓印材的填充性,並降低壓印材的露出。Therefore, by setting the intensity distribution of the
(第13實施形態)
第13實施形態的壓印裝置,說明關於確認壓印材容易從圖案區域8a露出的區域的有無,從得到的填充性的狀況設定照射光50的強度分佈的情形。(13th embodiment)
The imprint apparatus of the thirteenth embodiment will describe the case where the presence or absence of the area where the imprint material is easily exposed from the
關於第13實施形態的壓印方法利用圖20的流程圖說明。首先,在工程201中藉由上述圖2說明的壓印工程,利用模在基板上形成壓印材的圖案。在工程202中,確認在工程201形成的圖案的射擊區域的端部的填充性。在工程203中,從工程201的觀察結果確認是否需要將照射光的照射強度的分佈最適化。當在工程203判斷不需要填充性的最適化時,在工程204將現行的參數(照射強度的分佈)作為最適值設定。The imprinting method of the thirteenth embodiment will be described with reference to the flowchart of FIG. 20. First, in the
當在工程203判斷需要填充性的最適化時,在工程205從液滴的配置資訊、模的圖案條件求出圖案區域的端部的填充性,計算包含照射光50的照射強度、照射位置的照射強度的分佈。接著在工程207中,將在工程205得到的照射強度的分佈作為新的參數設定。再來,確認壓印後的射擊區域的端部的填充性,在工程206中判斷液滴的配置資訊及壓印輪廓等參數的最適化的必要性,若必要則能夠在工程208將液滴的配置資訊等最適化。When it is judged in the
藉由進行該等壓印工程與填充性的確認重複參數的修正,能夠保持壓印材的填充性,並降低壓印材的露出。By performing these imprinting processes and correcting the repetitive parameters of the fillability confirmation, the fillability of the imprinting material can be maintained and the exposure of the imprinting material can be reduced.
又,上述任何實施形態,都就採用光硬化法的壓印裝置1進行說明,但不限於光硬化法,利用熱使壓印材硬化的壓印裝置也可以。此時,壓印裝置具備將藉由熱使壓印材的黏性提升的加熱部作為硬化部,取代為了使壓印材的黏性增加而照射照射光至壓印材的光學系統。加熱部(硬化部),在模與壓印材接觸的狀態下,以硬化部以對與第1區域對應的壓印材賦予的單位面積的熱量,高於對與第2區域對應的壓印材賦予的單位面積的熱量還多的方式,將基板加熱。In addition, in any of the above-mentioned embodiments, the
(平坦加工裝置的實施形態) 利用圖21說明於適用本發明的平坦化裝置的實施形態。上述實施形態為將在模(底版、模板)預先描繪的圖案轉印至基板(晶圓)的方法,相對於此,本實施形態未在模(平面模板)形成凹凸圖案。基板上的基底圖案具有在前工程形成的圖案起因的凹凸輪廓,特別是隨著近年的記憶體元件的多層構造化,製程晶圓出現具有1100nm前後的段差者。因基板全體的緩緩的起伏引起的段差,雖能藉由在曝光工程中使用的掃描型曝光裝置的焦點追隨機能來補正,但收於曝光裝置的曝光狹縫面積內的間距的細凹凸,會消耗曝光裝置的DOF(DepthOfFocus)。作為將基板上的基底圖案平滑化的從前手法,使用SOC(SpinOnCarbon)、CMP(ChemicalMechanicalPolishing)這種形成平坦化層的手段。但是在從前例中,有在圖21A中的孤立圖案區域A與重複的Dense(線&空間圖案的密集)圖案區域B間的邊界部分中以40%~70%的凹凸抑制率無法得到充分的平坦化性能的問題,今後因多層化造成的基底的凹凸差有更增加的傾向。(Implementation form of flat processing device) An embodiment of the planarization device to which the present invention is applied will be described with reference to FIG. 21. The above-mentioned embodiment is a method of transferring a pattern drawn in advance on a mold (reverse plate, template) to a substrate (wafer). In contrast, this embodiment does not form a concave-convex pattern on the mold (flat template). The base pattern on the substrate has a concave-convex profile caused by the pattern formed in the previous process. Especially with the multi-layer structure of memory devices in recent years, the process wafer has a step around 1100nm. The step difference caused by the gradual undulation of the entire substrate can be corrected by the focus tracking energy of the scanning exposure device used in the exposure process, but the fine unevenness of the pitch within the area of the exposure slit of the exposure device can be corrected. It consumes the DOF (DepthOfFocus) of the exposure device. As a conventional method for smoothing the base pattern on the substrate, a method of forming a planarization layer such as SOC (Spin On Carbon) and CMP (Chemical Mechanical Polishing) is used. However, in the previous example, in the boundary portion between the isolated pattern area A in FIG. 21A and the repeated Dense (line & space pattern dense) pattern area B, the unevenness suppression rate of 40% to 70% cannot be sufficiently obtained. The problem of flattening performance will tend to increase in the future due to the unevenness of the substrate due to multilayering.
作為對該問題的解決策,在US9415418中,提案有以平坦化層光阻的噴墨點膠機進行的塗佈與平面模板進行的壓印形成連續膜的手法。又,在US8394282中,提案有將晶圓側的地形量測結果反映至藉由噴墨點膠機進行塗佈指示的每個位置的濃淡資訊的方法。本實施形態,為針對特別是對於預先塗佈的未硬化的光阻(壓印材、未硬化樹脂)將平面模板(模)抵壓而進行基板面內的局部平面化的平坦加工(平坦化)裝置,適用本發明者。As a solution to this problem, US9415418 proposes a method of forming a continuous film by coating with a flattened layer photoresist inkjet dispenser and imprinting with a flat template. In addition, US8394282 proposes a method of reflecting the topography measurement result on the wafer side to the shade information for each position indicated by the inkjet dispenser. In this embodiment, in particular, the uncured photoresist (imprint material, uncured resin) applied in advance is flattened (flattened) by pressing a flat template (mold) to flatten the surface of the substrate. The device is applicable to the inventor.
圖21A表示進行平坦化加工前的基板。區域A為孤立圖案區域圖案凸部分的面積少,區域B為密(Dense)區域圖案凸部分所占的面積與凹部分所占的面積為1:1。區域A與區域B的平均高度因凸部分所占的比例而取不同的值。FIG. 21A shows the substrate before the planarization process is performed. The area A is an isolated pattern area and the area of the convex part of the pattern is small, and the area B is a dense area. The area occupied by the convex part and the area occupied by the concave part are 1:1. The average height of the area A and the area B takes different values depending on the proportion of the convex portion.
圖21B表示對基板塗佈形成平坦化層的光阻的狀態的圖。在該圖中,雖示出基於US9415418藉由噴墨點膠機塗佈光阻的狀態,但當光阻的塗佈時使用旋塗機也能適用本發明。亦即,若包含對預先塗佈的未硬化的光阻使平面模板接觸而平坦化的工程的話,也可適用本發明。FIG. 21B shows a state in which a photoresist forming a planarization layer is applied to the substrate. In this figure, although the photoresist is coated by an inkjet dispenser based on US9415418, the present invention can also be applied to the photoresist using a spin coater. That is, the present invention can also be applied if it includes a process of flattening a flat template by contacting a previously coated uncured photoresist.
圖21C表示平面模板為以透過紫外光的玻璃或石英構成者,藉由來自曝光光源的曝光光的照射硬化光阻的工程的圖。此時,平面模板對於基板全體的平緩凹凸仿效成為基板的表面的輪廓。FIG. 21C is a diagram showing the process of curing the photoresist by the exposure light from the exposure light source when the flat template is made of glass or quartz that transmits ultraviolet light. At this time, the gentle unevenness of the flat template with respect to the entire substrate is imitated as the contour of the surface of the substrate.
圖21D為表示光阻硬化後,將平面模板分離的狀態的圖。Fig. 21D is a diagram showing a state where the flat template is separated after the photoresist is hardened.
本發明也能在平坦加工裝置的實施形態中適用,與上述任何實施形態相同,當使用未在台面部形成圖案的模(平面模板)時,能夠降低光阻(壓印材)從台面部的露出。The present invention can also be applied to the embodiment of the flat processing device. Like any of the above embodiments, when a mold (flat template) without a pattern formed on the table surface is used, the exposure of the photoresist (imprint material) from the table surface can be reduced. .
又,上述任何實施形態,都說明關於氣液界面14b從模的圖案區域(台面部)的中心均等地向外側移動的情形。不過,氣液界面14b不限於均等(同心圓狀)移動,有根據供應至基板上的壓印材的位置及供應量,壓印材到達圖案區域的側面的時間因小區域而變化的情形。因此,壓印裝置的控制部能夠因應供應至基板上的壓印材的供應位置及供應量變更照射區域52的小區域的照射順序。In addition, in any of the above-mentioned embodiments, the case where the gas-
又,上述任何實施形態,都就採用光硬化法的壓印裝置1進行說明,但不限於光硬化法,利用熱使壓印材硬化的壓印裝置也可以。此時,壓印裝置具備將藉由熱使壓印材的黏性提升的加熱部作為硬化部,取代為了使壓印材的黏性增加而照射照射光至壓印材的光學系統。In addition, in any of the above-mentioned embodiments, the
(物品的製造方法) 利用壓印裝置而形成的硬化物的圖案,在各種物品的至少一部為恒久地被使用,或是在製造各種物品時被暫時地使用。所謂物品,係指:電路元件、光學元件、MEMS、記錄元件、感測器、或模等。作為電路元件,可以是:DRAM、SRAM、快閃記憶體、MRAM的這種揮發性或不揮發性的半導體記憶體、或是LSI、CCD、影像感測器、FPGA的這種半導體元件等。作為模,可以是壓印用的模具等。(Method of manufacturing items) The pattern of the hardened object formed by the imprinting device is permanently used in at least a part of various articles or temporarily used when manufacturing various articles. The so-called article refers to: circuit components, optical components, MEMS, recording components, sensors, or molds, etc. As the circuit element, volatile or non-volatile semiconductor memory such as DRAM, SRAM, flash memory, and MRAM, or semiconductor element such as LSI, CCD, image sensor, FPGA, etc. can be used. As the mold, a mold for imprinting or the like may be used.
硬化物的圖案作為上述物品的至少一部的構成構件,可以原封不動地被使用、或是作為光阻遮罩暫時地被使用。在基板的加工工程中,進行蝕刻或離子注入等後,將光阻遮罩除去。The pattern of the cured product can be used as a constituent member of at least a part of the above-mentioned article as it is or temporarily used as a photoresist mask. In the substrate processing process, after etching or ion implantation, the photoresist mask is removed.
接著,說明有關物品的具體製造方法。如圖22A所示,準備絕緣體等的被加工材2z形成於表面的矽晶圓等基板1z,接著,藉由噴墨法等,供應壓印材3z於被加工材2z表面。在這裡,示出成為複數液滴狀的壓印材3z供應至基板上的樣子。Next, the specific manufacturing method of the related article will be explained. As shown in FIG. 22A, a
如圖22B所示,使壓印用的模4z的形成該凹凸圖案之側面朝向於基板上的壓印材3z,使之對向。如圖22C所示,使提供壓印材3z的基板1z與模4z接觸,並施加壓力。壓印材3z被填充於模4z與被加工材2z之間的間隙。在該狀態下,作為硬化用的能量,將光透過模4z而照射後,壓印材3z硬化。As shown in FIG. 22B, the side surface of the
如圖22D所示,使壓印材3z硬化後,將模4z與基板1z分離後,在基板1z上形成壓印材3z的硬化物的圖案。該硬化物的圖案,模的凹部成為硬化物的凸部、模的凹部成為硬化物的凸部所對應的形狀,亦即,在壓印材3z轉印模4z的凹凸圖案。As shown in FIG. 22D, after hardening the
如圖22E所示,將硬化物的圖案作為耐蝕刻遮罩進行蝕刻後,被加工材2z的表面之中,無硬化物或殘留的薄狀部分被除去,成為溝5z。此外,藉由與該蝕刻不同種類的蝕刻事先將該殘留的部分除去較佳。如圖22F所示,將硬化物的圖案除去後,可以得到被加工材2z的表面形成有溝5z的物品。在這裡雖將硬化物的圖案除去,但加工後也不除去,例如,作為半導體元件等裡含有的層間絕緣用的膜,也就是作為物品的構成構件利用也可以。As shown in FIG. 22E, after etching the pattern of the hardened material as an etching resistant mask, in the surface of the
本發明並不限於上述實施形態,在不脫離本發明的精神及範圍內,可以進行各種變更及變形。接著,為了將本發明的範圍公開,添附以下的請求項。The present invention is not limited to the above-mentioned embodiment, and various changes and modifications can be made without departing from the spirit and scope of the present invention. Next, in order to disclose the scope of the present invention, the following claims are appended.
本案以2017年10月17日提出的日本專利申請特願2017-201415、2017年10月23日提出的日本專利申請特願2017-204553、2018年9月21日提出的日本專利申請特願2018-177272、日本專利申請特願2018-177271為基礎主張優先權,並將其記載內容全部援用。This case is based on Japanese Patent Application Special Application 2017-201415 filed on October 17, 2017, Japanese Patent Application Special Application 2017-204553 filed on October 23, 2017, and Japanese Patent Application Special Application 2018 filed on September 21, 2018. -177272, Japanese Patent Application No. 2018-177271 as the basis for claiming priority, and citing all the contents recorded.
1:壓印裝置
8:模
3:模保持部
10:基板
4:基板保持部
5:供應部
9:光
2:光照射系統
35:光
6:攝像部
7:控制部
12:檢出器
16:基板夾盤
17:基板驅動機構
18:反射鏡
19:干涉計
14:壓印材
8d:台面部
8a:圖案區域
38:模驅動機構
41:劃分板
13:空間
8b:側面
15:突起形狀
8c:未填充
50:照射光
52:照射區域
51:照射光光源
53:光調變元件
54b:光學元件
54a:光學元件1: Imprinting device
8: Mode
3: Mold holding part
10: substrate
4: Board holding part
5: Supply Department
9: light
2: Light irradiation system
35: light
6: Camera Department
7: Control Department
12: Detector
16: substrate chuck
17: Substrate drive mechanism
18: mirror
19: Interferometer
14:
[圖1] 表示壓印裝置的圖。 [圖2] 表示形成壓印裝置的圖案的工程的圖。 [圖3A] 表示從前的壓印方法的圖。 [圖3B] 表示從前的壓印方法的圖。 [圖3C] 表示從前的壓印方法的圖。 [圖4A] 表示第1實施形態的照射區域的圖。 [圖4B] 表示第1實施形態的照射區域的圖。 [圖5A] 表示第1實施形態的照射區域的圖。 [圖5B] 表示第1實施形態的照射區域的圖。 [圖5C] 表示第1實施形態的照射區域的圖。 [圖6] 表示決定第1實施形態的照射區域的光學系統的圖。 [圖7] 表示壓印材與模接觸的區域及照射區域的圖。 [圖8A] 表示第1實施形態的照射區域與照射時點的圖。 [圖8B] 表示第1實施形態的照射區域與照射時點的圖。 [圖8C] 表示第1實施形態的照射區域與照射時點的圖。 [圖9A] 表示第2實施形態的照射強度與照射時間的圖。 [圖9B] 表示第2實施形態的照射強度與照射時間的圖。 [圖10A] 表示第3實施形態的照射區域與照射時點的圖。 [圖10B] 表示第3實施形態的照射區域與照射時點的圖。 [圖11A] 表示第4實施形態的照射區域與照射時點的圖。 [圖11B] 表示第4實施形態的照射區域與照射時點的圖。 [圖12A] 表示第5實施形態的照射區域與照射時點的圖。 [圖12B] 表示第5實施形態的照射區域與照射時點的圖。 [圖12C] 表示第5實施形態的照射區域與照射時點的圖。 [圖13A] 表示第6實施形態的照射區域與照射時點的圖。 [圖13B] 表示第6實施形態的照射區域與照射時點的圖。 [圖14A] 表示第7實施形態的照射強度的分佈的圖。 [圖14B] 表示第7實施形態的照射強度的分佈的圖。 [圖15A] 表示第8實施形態的照射強度的分佈的圖。 [圖15B] 表示第8實施形態的照射強度的分佈的圖。 [圖16] 表示第9實施形態的照射強度的分佈的圖。 [圖17] 表示第10實施形態的照射強度的分佈的圖。 [圖18] 表示第11實施形態的液滴的配置與模的端部的圖。 [圖19A] 表示第12實施形態的液滴的配置與模的端部的圖。 [圖19B] 表示第12實施形態的液滴的配置與模的端部的圖。 [圖20] 表示變更第13實施形態的參數的流程圖。 [圖21A] 表示平坦化處理的工程的圖。 [圖21B] 表示平坦化處理的工程的圖。 [圖21C] 表示平坦化處理的工程的圖。 [圖21D] 表示平坦化處理的工程的圖。 [圖22A] 用來說明物品的製造方法的圖。 [圖22B] 用來說明物品的製造方法的圖。 [圖22C] 用來說明物品的製造方法的圖。 [圖22D] 用來說明物品的製造方法的圖。 [圖22E] 用來說明物品的製造方法的圖。 [圖22F] 用來說明物品的製造方法的圖。[Fig. 1] A diagram showing an imprinting device. [Fig. 2] A diagram showing the process of forming the pattern of the imprinting device. [Fig. 3A] A diagram showing a conventional imprinting method. [Fig. 3B] A diagram showing the conventional imprinting method. [Fig. 3C] A diagram showing a conventional imprinting method. [Fig. 4A] A diagram showing the irradiation area of the first embodiment. [Fig. 4B] A diagram showing the irradiation area of the first embodiment. [Fig. 5A] A diagram showing the irradiation area of the first embodiment. [Fig. 5B] A diagram showing the irradiation area of the first embodiment. [Fig. 5C] A diagram showing the irradiation area of the first embodiment. [Fig. 6] A diagram showing an optical system that determines the irradiation area of the first embodiment. [Fig. 7] A diagram showing the area where the imprint material is in contact with the mold and the irradiation area. [Fig. 8A] A diagram showing the irradiation area and the irradiation time point of the first embodiment. [Fig. 8B] A diagram showing the irradiation area and the irradiation time point of the first embodiment. [Fig. 8C] A diagram showing the irradiation area and the irradiation time point of the first embodiment. [Fig. 9A] A graph showing the irradiation intensity and irradiation time in the second embodiment. [Fig. 9B] A graph showing the irradiation intensity and irradiation time in the second embodiment. [Fig. 10A] A diagram showing the irradiation area and the irradiation time point of the third embodiment. [Fig. 10B] A diagram showing the irradiation area and the irradiation timing of the third embodiment. [Fig. 11A] A diagram showing the irradiation area and the irradiation timing of the fourth embodiment. [Fig. 11B] A diagram showing the irradiation area and the irradiation timing of the fourth embodiment. [Fig. 12A] A diagram showing the irradiation area and the irradiation timing of the fifth embodiment. [Fig. 12B] A diagram showing the irradiation area and the irradiation time point of the fifth embodiment. [Fig. 12C] A diagram showing the irradiation area and the irradiation timing of the fifth embodiment. [Fig. 13A] A diagram showing the irradiation area and the irradiation timing of the sixth embodiment. [Fig. 13B] A diagram showing the irradiation area and the irradiation timing of the sixth embodiment. [Fig. 14A] A diagram showing the distribution of irradiation intensity in the seventh embodiment. [Fig. 14B] A diagram showing the distribution of irradiation intensity in the seventh embodiment. [Fig. 15A] A diagram showing the distribution of irradiation intensity in the eighth embodiment. [Fig. 15B] A diagram showing the distribution of irradiation intensity in the eighth embodiment. [Fig. 16] A diagram showing the distribution of irradiation intensity in the ninth embodiment. [Fig. 17] A graph showing the distribution of irradiation intensity in the tenth embodiment. [Fig. 18] A diagram showing the arrangement of droplets and the end of the mold in the eleventh embodiment. [Fig. 19A] A diagram showing the arrangement of droplets and the end of the mold in the twelfth embodiment. [Fig. 19B] A diagram showing the arrangement of droplets and the end of the mold in the twelfth embodiment. [Fig. 20] A flowchart showing the change of the parameters of the thirteenth embodiment. [Fig. 21A] A diagram showing the process of the flattening process. [Fig. 21B] A diagram showing the process of the flattening process. [Fig. 21C] A diagram showing the process of the flattening process. [Fig. 21D] A diagram showing the process of the flattening process. [Fig. 22A] A diagram for explaining the manufacturing method of the article. [Fig. 22B] A diagram for explaining the manufacturing method of the article. [Fig. 22C] A diagram for explaining the manufacturing method of the article. [Fig. 22D] A diagram for explaining the manufacturing method of the article. [Fig. 22E] A diagram for explaining the manufacturing method of the article. [Fig. 22F] A diagram for explaining the manufacturing method of the article.
52:照射區域 52: Irradiation area
52a~52h、52n:小區域 52a~52h, 52n: small area
Claims (23)
Applications Claiming Priority (8)
Application Number | Priority Date | Filing Date | Title |
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JP2017-201415 | 2017-10-17 | ||
JP2017201415 | 2017-10-17 | ||
JP2017204553 | 2017-10-23 | ||
JP2017-204553 | 2017-10-23 | ||
JP2018-177271 | 2018-09-21 | ||
JP2018177271A JP6686090B2 (en) | 2017-10-23 | 2018-09-21 | Imprint apparatus and method of manufacturing article |
JP2018177272A JP6650980B2 (en) | 2017-10-17 | 2018-09-21 | Imprint apparatus and article manufacturing method |
JP2018-177272 | 2018-09-21 |
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TW109134141A TWI756856B (en) | 2017-10-17 | 2018-10-16 | Imprinting device and method of manufacturing an article |
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US10663869B2 (en) | 2017-12-11 | 2020-05-26 | Canon Kabushiki Kaisha | Imprint system and imprinting process with spatially non-uniform illumination |
US10976657B2 (en) | 2018-08-31 | 2021-04-13 | Canon Kabushiki Kaisha | System and method for illuminating edges of an imprint field with a gradient dosage |
US11209730B2 (en) | 2019-03-14 | 2021-12-28 | Canon Kabushiki Kaisha | Methods of generating drop patterns, systems for shaping films with the drop pattern, and methods of manufacturing an article with the drop pattern |
US11181819B2 (en) | 2019-05-31 | 2021-11-23 | Canon Kabushiki Kaisha | Frame curing method for extrusion control |
US11327409B2 (en) | 2019-10-23 | 2022-05-10 | Canon Kabushiki Kaisha | Systems and methods for curing an imprinted field |
JP7337670B2 (en) * | 2019-11-15 | 2023-09-04 | キヤノン株式会社 | IMPRINT APPARATUS, IMPRINT METHOD, AND ARTICLE MANUFACTURING METHOD |
US11366384B2 (en) | 2019-12-18 | 2022-06-21 | Canon Kabushiki Kaisha | Nanoimprint lithography system and method for adjusting a radiation pattern that compensates for slippage of a template |
US11747731B2 (en) | 2020-11-20 | 2023-09-05 | Canon Kabishiki Kaisha | Curing a shaped film using multiple images of a spatial light modulator |
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US8361371B2 (en) * | 2008-02-08 | 2013-01-29 | Molecular Imprints, Inc. | Extrusion reduction in imprint lithography |
JP5392145B2 (en) * | 2010-02-26 | 2014-01-22 | 大日本印刷株式会社 | Imprint method and imprint apparatus |
JP5535164B2 (en) * | 2011-09-22 | 2014-07-02 | 株式会社東芝 | Imprint method and imprint apparatus |
JP2013069918A (en) * | 2011-09-22 | 2013-04-18 | Toshiba Corp | Imprint method and imprint apparatus |
JP6111783B2 (en) * | 2013-03-27 | 2017-04-12 | 大日本印刷株式会社 | Imprint method and imprint apparatus |
JP6273548B2 (en) * | 2013-12-02 | 2018-02-07 | パナソニックIpマネジメント株式会社 | Microstructure manufacturing equipment |
JP6415120B2 (en) * | 2014-06-09 | 2018-10-31 | キヤノン株式会社 | Imprint apparatus and article manufacturing method |
JP6661397B2 (en) * | 2015-04-22 | 2020-03-11 | キヤノン株式会社 | Imprint apparatus, imprint method, and article manufacturing method |
JP2017147283A (en) * | 2016-02-16 | 2017-08-24 | パナソニックIpマネジメント株式会社 | Transfer method for fine structure and transfer device for fine structure |
JP2017188556A (en) * | 2016-04-05 | 2017-10-12 | キヤノン株式会社 | Imprint device, imprint method, method of manufacturing article, and mold |
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