TW201730550A - Inspection apparatus comprising a test object holding means, a defect detection means, and a three-dimensional measurement means, and capable of shortening the time required for the inspection of an object under test - Google Patents
Inspection apparatus comprising a test object holding means, a defect detection means, and a three-dimensional measurement means, and capable of shortening the time required for the inspection of an object under test Download PDFInfo
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- TW201730550A TW201730550A TW105136686A TW105136686A TW201730550A TW 201730550 A TW201730550 A TW 201730550A TW 105136686 A TW105136686 A TW 105136686A TW 105136686 A TW105136686 A TW 105136686A TW 201730550 A TW201730550 A TW 201730550A
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- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/24—Measuring arrangements characterised by the use of optical techniques for measuring contours or curvatures
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
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- G—PHYSICS
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- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/01—Arrangements or apparatus for facilitating the optical investigation
- G01N2021/0106—General arrangement of respective parts
- G01N2021/0112—Apparatus in one mechanical, optical or electronic block
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/39—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using tunable lasers
- G01N2021/392—Measuring reradiation, e.g. fluorescence, backscatter
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/47—Scattering, i.e. diffuse reflection
- G01N2021/4735—Solid samples, e.g. paper, glass
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8806—Specially adapted optical and illumination features
- G01N2021/8822—Dark field detection
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/8851—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges
- G01N2021/8887—Scan or image signal processing specially adapted therefor, e.g. for scan signal adjustment, for detecting different kinds of defects, for compensating for structures, markings, edges based on image processing techniques
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N2201/00—Features of devices classified in G01N21/00
- G01N2201/10—Scanning
- G01N2201/104—Mechano-optical scan, i.e. object and beam moving
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- Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
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Abstract
Description
本發明係關於用以檢查半導體晶圓等之被檢查物的檢查裝置。 The present invention relates to an inspection apparatus for inspecting an inspection object such as a semiconductor wafer.
在以IC、LSI等為代表之半導體裝置之製造工程中，使用所謂的外觀檢查裝置而檢查半導體晶圓之表背面等為多(例如，參照專利文獻1等)。若藉由該外觀檢查裝置，依據攝影半導體晶圓之表背面等，可以檢測出混入至電路圖案內之異物，或在研削、研磨等之處理中產生的劃痕等之缺陷。 In the manufacturing process of a semiconductor device such as an IC or an LSI, the surface of the semiconductor wafer and the like are inspected using a so-called visual inspection device (see, for example, Patent Document 1). According to the visual inspection device, it is possible to detect a foreign matter mixed in the circuit pattern or a defect such as a scratch generated in the processing such as grinding or polishing, depending on the front and back surfaces of the semiconductor wafer.
然而，上述外觀檢查裝置中，由於二次元性攝影半導體晶元之表背面等而檢測出缺陷，故無法取得與半導體晶圓之厚度方向(高度方向)有關之缺陷的詳細資訊。為了解決該問題，近年來，提案有複數次攝影對象之領域而取得三次元之資訊的三次元測量裝置(例如，參照專利文獻2)。 However, in the visual inspection device described above, defects are detected due to the front and back surfaces of the secondary semiconductor semiconductor wafer, and the like, and detailed information on defects in the thickness direction (height direction) of the semiconductor wafer cannot be obtained. In order to solve this problem, in recent years, a three-dimensional measuring device that acquires three-dimensional information in the field of a plurality of photographic subjects has been proposed (for example, refer to Patent Document 2).
[專利文獻1]日本特開平10-185535號公報 [Patent Document 1] Japanese Patent Laid-Open No. Hei 10-185535
[專利文獻2]日本特開2015-38438號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2015-38438
上述三次元測量裝置可以詳細地取得比較窄之區域的資訊，另一方面不朝向概略檢查寬廣區域的用途。因此，使用該三次元測量裝置而檢查半導體晶圓等之被檢查物之時，通常以外觀檢查裝置事先確認缺陷之分布等。 The above-described three-dimensional measuring device can obtain information of a relatively narrow area in detail, and does not face the purpose of roughly checking a wide area. Therefore, when the inspection object such as a semiconductor wafer is inspected using the three-dimensional measuring device, the distribution of defects or the like is usually confirmed in advance by the visual inspection device.
然而，在如此之檢查方法中，因在外觀檢查裝置的檢查後，將被檢查物搬入至三次元測量裝置而實施詳細的檢查，故有被檢查物之檢查所需之時間容易變長的問題。本發明係鑑於如此之問題而研究出，其目的在於提供可以縮短被檢查物之檢查所需之時間的檢查裝置。 However, in such an inspection method, since the inspection object is carried into the three-dimensional measuring device after the inspection of the visual inspection device, and the detailed inspection is performed, the time required for the inspection of the inspection object is likely to become long. . The present invention has been made in view of such problems, and an object thereof is to provide an inspection apparatus capable of shortening the time required for inspection of an inspection object.
若藉由本發明之一觀點時，提供一種檢查板狀之被檢查物的檢查裝置，其特徵在於具備：被檢查物保持手段，其係具備保持該被檢查物的保持面；缺陷檢測手段，其係根據被照射至該被檢查物之面的雷射光線之散射光而檢測出該面內之缺陷；及三次元測量手段，其係對包含以該缺陷檢測手段所檢測出之該缺陷的區域進行三次元 性攝影而予以再評估，若藉由本發明之一觀點時，提供一種檢查板狀之被檢查物的檢查裝置，其特徵在於具備：被檢查物保持手段，其係具備保持該被檢查物的保持面；缺陷檢測手段，其係以亮視野或暗視野攝影該被檢查物之面而檢測出該面內之缺陷；及三次元測量手段，其係對包含以該缺陷檢測手段所檢測出之該缺陷的區域進行三次元性攝影而予以再評估。 According to one aspect of the present invention, there is provided an inspection apparatus for inspecting a test object in a plate shape, comprising: an inspection object holding means having a holding surface for holding the inspection object; and a defect detecting means Defecting the in-plane defect based on the scattered light of the laser beam irradiated onto the surface of the object to be inspected; and a three-dimensional measuring means for the region including the defect detected by the defect detecting means Three yuan According to one aspect of the present invention, an inspection apparatus for inspecting a plate-shaped inspection object is provided, comprising: an inspection object holding means for holding the inspection object; a defect detecting means for detecting a defect in the surface by photographing the surface of the object to be inspected by a bright field or a dark field; and a three-dimensional measuring means for detecting the defect detected by the defect detecting means The defective area was re-evaluated by three-dimensional photography.
在上述本發明之一觀點中，以該缺陷檢測手段在該散射光之光強度超過事先預定之臨界值之情況判定存在該缺陷為佳。 In the above aspect of the invention, it is preferable that the defect detecting means determines that the defect exists when the light intensity of the scattered light exceeds a predetermined threshold value.
與本發明之一觀點有關之檢查裝置由於同時具備檢測出被檢查物之面內的缺陷之缺陷檢測手段，和對包含以缺陷檢測手段所檢測出之缺陷的區域進行三次元性攝影而予以再評估的三次元測量手段，故於檢測出被檢查物之面內之缺陷之後，可以在此情形下對包含缺陷的區域進行三次元性攝影而予以再評估。依此，不需要搬運等之工程，可以縮短被檢查物之檢查所需的時間。 The inspection apparatus according to one aspect of the present invention has a defect detecting means for detecting a defect in the surface of the object to be inspected, and a three-dimensional photographing of the area including the defect detected by the defect detecting means. The three-dimensional measurement means of the evaluation, so after detecting the defects in the surface of the object to be inspected, the area containing the defect can be re-evaluated by performing a three-dimensional photography in this case. According to this, it is not necessary to carry out the work such as transportation, and the time required for the inspection of the inspection object can be shortened.
2、2a‧‧‧檢查裝置 2, 2a‧‧‧ inspection device
4‧‧‧基台 4‧‧‧Abutment
6‧‧‧保持台(被檢查物保持手段) 6‧‧‧ Keeping the table (inspection means to be inspected)
6a‧‧‧保持面 6a‧‧‧ Keep face
8、8a、8b‧‧‧缺陷檢測單元(缺陷檢測手段) 8, 8a, 8b‧‧‧ Defect detection unit (defect detection means)
10‧‧‧三次元測量單元(三次元測量手段) 10‧‧‧Three-dimensional measurement unit (three-dimensional measurement means)
12‧‧‧支撐構造 12‧‧‧Support structure
12a‧‧‧前面 12a‧‧‧ front
12b‧‧‧後面 After 12b‧‧‧
14‧‧‧第1移動機構 14‧‧‧1st mobile agency
16‧‧‧第1導軌 16‧‧‧1st rail
18‧‧‧移動塊 18‧‧‧moving block
20‧‧‧第1滾珠螺桿 20‧‧‧1st ball screw
22‧‧‧第1脈衝馬達 22‧‧‧1st pulse motor
24‧‧‧第2移動機構 24‧‧‧2nd mobile agency
26‧‧‧Y軸導軌 26‧‧‧Y-axis guide
28‧‧‧Y軸移動板 28‧‧‧Y-axis moving board
30‧‧‧Y軸滾珠螺桿 30‧‧‧Y-axis ball screw
32‧‧‧Y軸脈衝馬達 32‧‧‧Y-axis pulse motor
34‧‧‧Z軸導軌 34‧‧‧Z-axis guide
36‧‧‧框體 36‧‧‧ frame
38‧‧‧Z軸滾珠螺桿 38‧‧‧Z-axis ball screw
40‧‧‧Z軸脈衝馬達 40‧‧‧Z-axis pulse motor
42‧‧‧雷射照射單元 42‧‧‧Laser illumination unit
44‧‧‧聚光單元 44‧‧‧ concentrating unit
44a‧‧‧內壁面 44a‧‧‧ inner wall
44b‧‧‧開口 44b‧‧‧ openings
46‧‧‧檢查單元 46‧‧‧Check unit
48‧‧‧光電倍增管 48‧‧‧Photomultiplier
52‧‧‧光源 52‧‧‧Light source
54‧‧‧半反射鏡 54‧‧‧half mirror
56‧‧‧聚光單元 56‧‧‧concentrating unit
58‧‧‧鏡筒 58‧‧‧Mirror tube
60‧‧‧干涉單元 60‧‧‧Interference unit
62‧‧‧平板 62‧‧‧ tablet
64‧‧‧半反射鏡 64‧‧‧half mirror
66‧‧‧參照鏡 66‧‧‧ reference mirror
68‧‧‧攝影單元 68‧‧‧Photographic unit
72‧‧‧亮視野光源 72‧‧‧ Bright field light source
74‧‧‧照明透鏡 74‧‧‧ illumination lens
76‧‧‧半反射鏡 76‧‧‧Half mirror
78‧‧‧鏡筒 78‧‧‧Mirror tube
80‧‧‧接物鏡 80‧‧‧ receiving objective lens
82‧‧‧暗視野光源 82‧‧‧ dark field light source
84‧‧‧反射鏡 84‧‧‧Mirror
86‧‧‧成像透鏡 86‧‧‧ imaging lens
88‧‧‧攝影單元 88‧‧‧Photographic unit
11‧‧‧被檢查物 11‧‧‧Inspected objects
11a‧‧‧被檢查面 11a‧‧‧Checked face
21‧‧‧雷射光線 21‧‧‧Laser light
23‧‧‧散射光 23‧‧‧scattered light
25、27、29‧‧‧光 25, 27, 29 ‧ ‧ light
31‧‧‧亮視野光 31‧‧‧ bright field of light
33‧‧‧暗視野光 33‧‧‧Dark field light
圖1為示意性表示檢查裝置之主要的正面側的斜視 圖。 Figure 1 is a perspective view showing the main front side of the inspection apparatus Figure.
圖2為示意性表示檢查裝置之主要的背面側的斜視圖。 Fig. 2 is a perspective view schematically showing a main back side of the inspection apparatus.
圖3為示意性表示缺陷檢測單元之構成例的圖示。 Fig. 3 is a view schematically showing a configuration example of a defect detecting unit.
圖4為示意性表示三次元測量單元之構成例的圖示。 Fig. 4 is a view schematically showing a configuration example of a three-dimensional measuring unit.
圖5為示意性表示干涉單元之構成例的圖示。 Fig. 5 is a view schematically showing an example of the configuration of an interference unit.
圖6(A)為示意性表示缺陷檢查工程的俯視圖，圖6(B)為示意性表示以缺陷檢測單元所測量的光強度之例的曲線圖。 Fig. 6(A) is a plan view schematically showing a defect inspection process, and Fig. 6(B) is a graph schematically showing an example of light intensity measured by the defect detecting unit.
圖7(A)為示意性表示再評估工程的側面圖，圖7(B)為表示所形成的三次元畫像之例的圖示。 Fig. 7(A) is a side view schematically showing a re-evaluation project, and Fig. 7(B) is a view showing an example of a three-dimensional image formed.
圖8為示意性表示與第1變形例有關之缺陷檢測單元的圖示。 Fig. 8 is a view schematically showing a defect detecting unit according to a first modification.
圖9為示意性表示與變形例有關之檢查裝置之主要的背面側的斜視圖。 Fig. 9 is a perspective view schematically showing a main rear side of an inspection apparatus according to a modification.
參照附件圖面，針對與本發明之一觀點有關的實施型態進行說明。圖1為示意性表示檢查裝置2之主要的正面側之斜視圖，圖2為示意性表示檢查裝置2之主要的背面側之斜視圖。 The embodiment relating to one aspect of the present invention will be described with reference to the attached drawings. 1 is a perspective view schematically showing a main front side of the inspection apparatus 2, and FIG. 2 is a perspective view schematically showing a main back side of the inspection apparatus 2.
圖1及圖2所示般，檢查裝置2具備支撐各構成要素的基台4。在基台4之中央設置保持板狀之被檢查物11(參照圖3等)之保持台(被檢查物保持手段)6。被 檢查物11係例如IC、LSI等之製造所使用之圓盤狀之半導體晶圓。但是，被檢查物11之種類、形狀等並無限制，例如即使以封裝基板、陶瓷基板、玻璃基板等作為被檢查物11亦可。 As shown in FIG. 1 and FIG. 2, the inspection apparatus 2 is provided with the base 4 which supports each component. In the center of the base 4, a holding table (inspection object holding means) 6 for holding a check object 11 (see FIG. 3 and the like) in a plate shape is provided. Be The inspection object 11 is a disk-shaped semiconductor wafer used for manufacturing, for example, an IC or an LSI. However, the type, shape, and the like of the test object 11 are not limited, and for example, a package substrate, a ceramic substrate, a glass substrate, or the like may be used as the test object 11.
保持台6被連結於例如馬達等之旋轉驅動源(無圖示)，繞大概平行於Z軸方向(垂直方向)之旋轉軸之周圍旋轉。保持台6之上面成為保持被檢查物11之保持面6a。該保持面6a例如通過被形成在保持台6之內部的吸引路(無圖示)等而連接於吸引源(無圖示)。藉由使吸引源之負壓作用於保持面6a，可以在保持台6保持被檢查物11。 The holding table 6 is coupled to a rotation driving source (not shown) such as a motor, and rotates around a rotation axis that is approximately parallel to the Z-axis direction (vertical direction). The upper surface of the holding table 6 serves as a holding surface 6a for holding the inspection object 11. The holding surface 6a is connected to a suction source (not shown) by, for example, a suction path (not shown) formed inside the holding table 6. The object to be inspected 11 can be held at the holding table 6 by applying a negative pressure of the suction source to the holding surface 6a.
在基台4之上面，以跨越保持台6之方式配置有支撐缺陷檢測單元(缺陷檢測手段)8及三次元測量單元(三次元測量手段)10之門型支撐構件12。在支撐構件12之前面12a之上部，設置有使缺陷檢測單元8在Y軸方向(左右方向)移動之第1移動機構14。 On the upper surface of the base 4, a door type support member 12 that supports a defect detecting unit (defect detecting means) 8 and a three-dimensional measuring unit (three-dimensional measuring means) 10 is disposed across the holding table 6. A first moving mechanism 14 that moves the defect detecting unit 8 in the Y-axis direction (left-right direction) is provided above the front surface 12a of the support member 12.
第1移動機構14具備被配置在支撐構造12之前面12a且平行於Y軸方向的一對導軌16。在第1導軌16，以能夠滑動之方式，安裝構成第1移動機構14的移動塊18。在移動塊18之背面側(後面側)設置有螺帽部(無圖示)，該螺帽部螺合平行於第1導軌16之第1滾珠螺桿20。 The first moving mechanism 14 includes a pair of guide rails 16 that are disposed on the front surface 12a of the support structure 12 and that are parallel to the Y-axis direction. The moving block 18 constituting the first moving mechanism 14 is slidably attached to the first guide rail 16. A nut portion (not shown) is provided on the back side (rear side) of the moving block 18, and the nut portion is screwed into the first ball screw 20 that is parallel to the first rail 16.
在第1滾珠螺桿20之一端部連結有第1脈衝馬達22。若以第1脈衝馬達22使第1滾珠螺桿20旋轉 時，移動塊18沿著第1導軌16而在Y軸方向移動。在移動塊18之下部設置有缺陷檢測單元8。針對缺陷檢測單元8之詳細於後述。 The first pulse motor 22 is coupled to one end of the first ball screw 20. When the first pulse motor 22 rotates the first ball screw 20 At this time, the moving block 18 moves in the Y-axis direction along the first guide rail 16. A defect detecting unit 8 is provided at a lower portion of the moving block 18. The details of the defect detecting unit 8 will be described later.
另一方面，在支撐構件12之後面12b之上部，設置有使三次元測量單元10在Y軸方向及Z軸方向移動之第2移動機構24。第2移動機構24具備被配置在支撐構造12之後面12b且平行於Y軸方向的一對Y軸導軌26。在Y軸導軌26，以能夠滑動之方式，安裝構成第2移動機構24的Y軸移動板28。 On the other hand, a second moving mechanism 24 that moves the three-dimensional measuring unit 10 in the Y-axis direction and the Z-axis direction is provided on the upper portion of the rear surface 12b of the support member 12. The second moving mechanism 24 includes a pair of Y-axis guide rails 26 that are disposed on the rear surface 12b of the support structure 12 and that are parallel to the Y-axis direction. The Y-axis moving plate 28 constituting the second moving mechanism 24 is slidably attached to the Y-axis guide rail 26.
在Y軸移動板28之背面側(後面側)設置有螺帽部(無圖示)，該螺帽部螺合平行於Y軸導軌26之Y軸滾珠螺桿30。在Y軸滾珠螺桿30之一端部連結有Y軸脈衝馬達32。若以Y軸脈衝馬達32使Y軸滾珠螺桿30旋轉時，Y軸移動板28沿著Y軸導軌26而在Y軸方向移動。 A nut portion (not shown) is provided on the back side (rear side) of the Y-axis moving plate 28, and the nut portion is screwed into the Y-axis ball screw 30 parallel to the Y-axis guide rail 26. A Y-axis pulse motor 32 is coupled to one end of the Y-axis ball screw 30. When the Y-axis pulse screw 30 is rotated by the Y-axis pulse motor 32, the Y-axis moving plate 28 moves in the Y-axis direction along the Y-axis guide rail 26.
在Y軸移動板28之表面(後面)設置有平行於Z軸方向之Z軸導軌34。在Z軸導軌34，以能夠滑動之方式，安裝有三次元測量單元10之框體36。在框體36之背面側(前面側)設置有螺帽部(無圖示)，該螺帽部螺合平行於Z軸導軌34之Z軸滾珠螺桿38。 A Z-axis guide rail 34 parallel to the Z-axis direction is provided on the surface (back surface) of the Y-axis moving plate 28. A frame 36 of the three-dimensional measuring unit 10 is attached to the Z-axis guide 34 so as to be slidable. A nut portion (not shown) is provided on the back side (front side) of the frame body 36, and the nut portion is screwed into the Z-axis ball screw 38 parallel to the Z-axis guide rail 34.
在Z軸滾珠螺桿38之一端部連結有Z軸脈衝馬達40。若以Z軸脈衝馬達40使Z軸滾珠螺桿38旋轉時，三次元測量單元10之框體36沿著Z軸導軌34而在Z軸方向移動。 A Z-axis pulse motor 40 is coupled to one end of the Z-axis ball screw 38. When the Z-axis ball screw 38 is rotated by the Z-axis pulse motor 40, the frame 36 of the three-dimensional measuring unit 10 moves in the Z-axis direction along the Z-axis guide 34.
圖3為示意性表示缺陷檢測單元8之構成例的圖示。如圖3所示般，與本實施型態有關之缺陷檢測單元8具備朝向被配置在下方之被檢查物11之被檢查面11a照射雷射光線21之雷射照射單元42。該雷射照射單元42例如將在雷射振盪器振盪之雷射光線21聚光至被檢查面11a。 FIG. 3 is a view schematically showing a configuration example of the defect detecting unit 8. As shown in FIG. 3, the defect detecting unit 8 according to the present embodiment includes a laser irradiation unit 42 that irradiates the laser beam 21 toward the inspection surface 11a of the inspection object 11 disposed below. The laser irradiation unit 42 condenses the laser beam 21 oscillated by the laser oscillator to the surface to be inspected 11a, for example.
在被檢查面11a被照射到雷射光線21之區域(以下，稱為被照射區域)存在缺陷之情況下，雷射光線21由於缺陷被散射，產生散射光23。另外，在被照射區域不存在缺陷之情況下，雷射光線21原樣地被反射。照射單元42之雷射振盪器係例如半導體雷射，使適合於在缺陷之散射的波長(405nm等)之雷射光線21振盪。但是，雷射振盪器之種類或雷射光線21之波長等並無限制。 When there is a defect in a region where the inspection surface 11a is irradiated with the laser beam 21 (hereinafter referred to as an irradiation region), the laser beam 21 is scattered by the defect to generate the scattered light 23. Further, in the case where there is no defect in the irradiated area, the laser beam 21 is reflected as it is. The laser oscillator of the illumination unit 42, for example, a semiconductor laser, oscillates the laser beam 21 suitable for the wavelength (405 nm, etc.) at which the defect is scattered. However, the type of the laser oscillator or the wavelength of the laser beam 21 is not limited.
在照射單元42之周圍配置有聚光上述散射光23之筒狀的聚光單元44。聚光單元44之內壁面44a被精加工成鏡面，反射從被形成在下部的開口44b進入聚光單元44內之散射光23而聚光於上方之聚光點。 A cylindrical concentrating unit 44 that condenses the scattered light 23 is disposed around the irradiation unit 42. The inner wall surface 44a of the condensing unit 44 is finished into a mirror surface, and reflects the scattered light 23 entering the condensing unit 44 from the opening 44b formed in the lower portion, and condensed on the upper condensing point.
在聚光單元44之上方配置有檢測出被聚光之散射光23的檢測單元46。檢測單元46具備有能夠檢測出微弱之光的光電倍增管48。光電倍增管48被配置在上述散射光23之聚光點附近。依此，可以以光電倍增管48適當地檢測出因缺陷引起的微弱之散射光23。 Above the concentrating unit 44, a detecting unit 46 that detects the condensed scattered light 23 is disposed. The detecting unit 46 is provided with a photomultiplier tube 48 capable of detecting weak light. The photomultiplier tube 48 is disposed near the light collecting point of the scattered light 23 described above. Accordingly, the weak scattered light 23 due to the defect can be appropriately detected by the photomultiplier tube 48.
圖4為示意性表示三次元測量單元10之構成例的圖示。如圖4所示般，與本實施型態有關之三次元測 量單元10具備有搭載各構成要素之筒狀之框體36。在框體36內之側部設置有LED等之光源52。在光源52產生之光25主要朝向側方放射。 FIG. 4 is a view schematically showing a configuration example of the three-dimensional measurement unit 10. As shown in Figure 4, the three-dimensional measurement related to this embodiment The measuring unit 10 is provided with a cylindrical frame 36 on which each component is mounted. A light source 52 such as an LED is provided on a side portion of the casing 36. The light 25 generated at the light source 52 is mainly radiated toward the side.
在光源52之側方設置有將從光源52放射出之光25引導至下方之半反射鏡54。在半反射鏡54之下方，配置有將在半反射鏡54反射之光源52之光25聚光至被檢查面11a的聚光單元56。聚光單元56代表性為凸透鏡，例如被固定在框體36之下端的鏡筒58之內部。 A half mirror 54 that guides the light 25 emitted from the light source 52 to the lower side is provided on the side of the light source 52. Below the half mirror 54, a light collecting unit 56 that condenses the light 25 of the light source 52 reflected by the half mirror 54 to the inspection surface 11a is disposed. The concentrating unit 56 is typically a convex lens, for example, fixed inside the lens barrel 58 at the lower end of the frame 36.
在聚光單元56之下方，配置生成參照用之光27，而與在被檢查面11a被反射之光29干涉的干涉單元60。圖5為示意性表示干涉單元60之構成例的圖示。干涉單元60代表有米勞型(Mirau)之干涉光學系統，具備由穿透光25、27、29之玻璃等之材料所構成之平板62，和被配置在平板62之下方的半反射鏡64。 Below the concentrating unit 56, an interference unit 60 that generates the reference light 27 and interferes with the light 29 reflected by the inspection surface 11a is disposed. FIG. 5 is a view schematically showing a configuration example of the interference unit 60. The interference unit 60 represents an interference optical system having a Mirau type, a flat plate 62 composed of a material that penetrates the glass of light 25, 27, 29, and the like, and a half mirror 64 disposed below the flat plate 62. .
在平板62之中央配置有構成參照面之微小的參照鏡66。通過聚光單元56在反射鏡64朝上反射之光25之一部分在參照鏡66朝下反射。另外，穿透半反射鏡64之光25之另外的一部分在被檢查面11a朝上被反射。 A minute reference mirror 66 constituting a reference surface is disposed in the center of the flat plate 62. A portion of the light 25 reflected upward by the mirror 64 by the concentrating unit 56 is reflected downward at the reference mirror 66. In addition, another portion of the light 25 penetrating the half mirror 64 is reflected upward on the surface to be inspected 11a.
藉由在參照鏡(參照面)66的反射所生成之參照用之光27在半反射鏡64再次朝上被反射，與在被檢查面11a被反射之光29同時通過平板62、聚光單元56、半反射鏡54等而到達至上方之攝影單元68。依此，到達至攝影單元68之光27和光29係在因應從被檢查面11a至干涉單元60為止之距離等的特定條件下干涉。 The reference light 27 generated by the reflection of the reference mirror (reference surface) 66 is again reflected upward in the half mirror 64, and passes through the flat plate 62 and the condensing unit simultaneously with the light 29 reflected on the surface to be inspected 11a. 56, the half mirror 54 and the like reach the photographing unit 68 above. Accordingly, the light 27 and the light 29 that have reached the photographing unit 68 interfere with each other under specific conditions such as the distance from the inspection surface 11a to the interference unit 60.
攝影單元68具備有複數之畫素被配列成二次元(X軸方向及Y軸方向)之CCD、CMOS等之攝影元件。以該攝影元件取得光27和光29之干涉光之二次元性的光強度，依此可以形成持有因應從被檢查面11a至干涉單元60為止之距離等而決定的亮度分布的畫像。 The photographing unit 68 includes a photographing element such as a CCD or a CMOS in which a plurality of pixels are arranged in a quadratic element (X-axis direction and Y-axis direction). By taking the secondary light intensity of the interference light of the light 27 and the light 29 by the imaging element, it is possible to form an image having a luminance distribution determined in accordance with the distance from the surface to be inspected 11a to the interference unit 60, and the like.
即是，所取得之畫像之亮度因應三次元測量單元10之Z軸方向之位置而變化。利用該現象，例如從改變Z軸方向之位置而所取之複數畫像，分別抽出亮度或亮度變化成為最大等之座標(XY座標)，依此可以形成與被檢查面11a之形狀對應的三次元畫像。 That is, the brightness of the obtained portrait changes in accordance with the position of the three-dimensional measuring unit 10 in the Z-axis direction. By using this phenomenon, for example, a plurality of images obtained by changing the position in the Z-axis direction are extracted, and coordinates (XY coordinates) in which the brightness or the brightness change is maximized are extracted, whereby a three-dimensional element corresponding to the shape of the surface to be inspected 11a can be formed. portrait.
接著，說明以該檢查裝置2被實施之被檢查物11之檢查方法的概略。在與本實施型態有關之檢查方法中，首先實施使被檢查物11保持於檢查裝置2之保持台6的保持工程。具體而言，以被檢查面11a露出至上方之方式，在保持面6a載置被檢查物11。在該狀態下，若使吸引源之負壓作用於保持面6a時，被檢查物11被保持台6吸引、保持。 Next, an outline of an inspection method of the inspection object 11 to be performed by the inspection apparatus 2 will be described. In the inspection method according to the present embodiment, first, the holding work for holding the inspection object 11 on the holding table 6 of the inspection device 2 is performed. Specifically, the test object 11 is placed on the holding surface 6a such that the surface to be inspected 11a is exposed upward. In this state, when the negative pressure of the suction source is applied to the holding surface 6a, the inspection object 11 is sucked and held by the holding table 6.
於保持工程之後，實施以缺陷檢測單元8檢測出存在於被檢查面11a之缺陷檢測工程。圖6(A)係示意性表示缺陷檢測工程的俯視圖。在該缺陷檢測工程中，例如圖6(A)所示般，使保持台6繞Z軸之周圍旋轉，同時使缺陷檢查單元8在Y軸方向移動。依此，檢查之對象區域在被檢查面11a上以描繪螺旋之方式移動。 After the maintenance process, the defect detection unit 8 detects the defect detection project existing on the inspection surface 11a. Fig. 6(A) is a plan view schematically showing a defect detecting process. In the defect detecting process, for example, as shown in FIG. 6(A), the holding table 6 is rotated around the Z-axis while the defect inspection unit 8 is moved in the Y-axis direction. Accordingly, the inspection target area moves on the inspected surface 11a in a manner of drawing a spiral.
在該移動之間，藉由以缺陷檢測單元8連續 性或斷續性地測量散射光23之強度，可以在被檢查面11a之大概全體檢測出缺陷之分布。圖6(B)係表示以缺陷檢查單元8所測量的光強度之例的曲線圖。散射光23之光強度一般在存在缺陷之區域變大。依此，在例如某區域(座標)測量出之散射光23之光強度超過事先設定之臨界值Ith之情況，可以判定在其區域(座標)存在缺陷。 Between the movements, by measuring the intensity of the scattered light 23 continuously or intermittently by the defect detecting unit 8, the distribution of defects can be detected at approximately the entire inspection surface 11a. Fig. 6(B) is a graph showing an example of the light intensity measured by the defect inspection unit 8. The light intensity of the scattered light 23 generally becomes large in the region where the defect exists. Accordingly, in the case where, for example, the light intensity of the scattered light 23 measured in a certain region (coordinate) exceeds the threshold value I th set in advance, it can be determined that there is a defect in the region (coordinate).
該判定係藉由例如構成缺陷檢測單元8之判定單元(無圖示)等而進行。另外，判定單元即使被設置在缺陷檢測單元8之外部亦可。例如，亦可以將控制檢查裝置2之全體的控制單元(無圖示)等當作缺陷檢測單元8之判定單元使用。 This determination is performed by, for example, a determination unit (not shown) constituting the defect detection unit 8 or the like. Further, the determination unit may be provided outside the defect detecting unit 8 even if it is provided. For example, a control unit (not shown) or the like of the entire control inspection device 2 may be used as the determination unit of the defect detecting unit 8.
於缺陷檢測工程之後，實施藉由三次元測量單元10對存在缺陷之區域進行三次元性攝影而予以在評估的再評估工程。圖7(A)係示意性表示再評估工程的側面圖。在該再評估工程中，首先使保持台6繞Z軸之周圍旋轉，同時使三次元測量單元10在Y軸方向移動，而將三次元測量單元10定位在藉由缺陷檢測單元8檢測出缺陷的區域(XY座標)。 After the defect detection process, a re-evaluation project for evaluation by the three-dimensional measurement unit 10 for the three-dimensional photography of the defective area is performed. Fig. 7(A) is a side view schematically showing a reevaluation project. In the re-evaluation project, the holding table 6 is first rotated about the Z-axis while the three-dimensional measuring unit 10 is moved in the Y-axis direction, and the three-dimensional measuring unit 10 is positioned to detect the defect by the defect detecting unit 8. Area (XY coordinates).
而且，一面變更三次元測量單元10之Z軸方向之位置，一面在各位置(Z座標)攝影被檢查面11a。如上述般，所取得之畫像之亮度因應三次元測量單元10之Z軸方向之位置而變化。依此，從改變Z軸方向之位置而所取之複數畫像，分別抽出亮度或亮度變化成為最大等之座標(XY座標)而重疊，依此可以形成與被檢查面11a之 形狀對應的三次元畫像。 Then, while the position of the three-dimensional measuring unit 10 in the Z-axis direction is changed, the inspected surface 11a is photographed at each position (Z coordinate). As described above, the brightness of the obtained portrait changes in accordance with the position of the three-dimensional measuring unit 10 in the Z-axis direction. According to this, the complex image obtained by changing the position in the Z-axis direction is extracted by superimposing the coordinates (XY coordinates) at which the brightness or the brightness change becomes the largest, and thus the surface to be inspected 11a can be formed. A three-dimensional portrait corresponding to the shape.
圖7(B)係表示所形成之三次元畫像之例的圖示。三次元畫像之形成例如在構成三次元測量單元10之處理單元(無圖示)等進行。另外，處理單元即使被設置在三次元測量單元10之外部亦可。例如，亦可以將控制檢查裝置2之全體的控制單元等當作三次元測量單元10之處理單元使用。 Fig. 7(B) is a view showing an example of a three-dimensional image formed. The formation of the three-dimensional image is performed, for example, in a processing unit (not shown) constituting the three-dimensional measurement unit 10. In addition, the processing unit may be provided outside the three-dimensional measurement unit 10 even if it is disposed. For example, the control unit or the like of the entire control inspection device 2 may be used as the processing unit of the three-dimensional measurement unit 10.
如上述般，與本實施型態有關之檢查裝置2由於同時具備檢測出被檢查物11之被檢查面11a內的缺陷之缺陷檢測單元(缺陷檢測手段)8，和對包含以缺陷檢測單元所檢測出之缺陷的區域進行三次元性攝影而予以再評估的三次元測量單元(三次元測量手段)10，故於檢測出被檢查物11之被檢查面11a內之缺陷之後，可以在此情形下對包含缺陷的區域進行三次元性攝影而予以再評估。依此，不需要搬運等之工程，可以縮短被檢查物11之檢查所需的時間。 As described above, the inspection apparatus 2 according to the present embodiment includes the defect detecting unit (defect detecting means) 8 that detects the defect in the inspected surface 11a of the object 11 to be inspected, and the pair includes the defect detecting unit. The three-dimensional measurement unit (three-dimensional measurement means) 10 for re-evaluating the area in which the defect is detected is three-dimensionally photographed, so that after detecting the defect in the inspected surface 11a of the object 11 to be inspected, the situation may be The area containing the defect is re-evaluated by performing a three-dimensional photography. According to this, it is not necessary to carry out the work such as transportation, and the time required for the inspection of the inspection object 11 can be shortened.
另外，本發明並不限定於上述實施型態之記載，能夠做各種變更而加以實施。例如，在上述實施型態中，雖然例示根據照射至被檢查物11之被檢查面11a的雷射光線21之散射光23而檢測出被檢查面11a內之缺陷的缺陷檢測單元8，但是亦可以使用其他之缺陷檢測單元。 In addition, the invention is not limited to the description of the above-described embodiments, and various modifications can be made. For example, in the above-described embodiment, the defect detecting unit 8 that detects the defect in the inspected surface 11a based on the scattered light 23 of the laser beam 21 irradiated onto the inspected surface 11a of the object 11 to be inspected is exemplified, but Other defect detection units can be used.
圖8為示意性表示與第1變形例有關之缺陷檢測單元(缺陷檢測手段)8a的圖示。與第1變形例有關之 缺陷檢測單元8a例如被構成在亮視野或暗視野攝影被檢查物11之被檢查面11a，而可以檢測出該被檢查面11a內之缺陷。 FIG. 8 is a view schematically showing a defect detecting unit (defect detecting means) 8a according to the first modification. Related to the first modification The defect detecting unit 8a is configured, for example, to inspect the surface 11a of the inspection object 11 in the bright field or the dark field, and can detect the defect in the inspection surface 11a.
缺陷檢測單元8a具備有亮視野觀察用之亮視野光源72。從亮視野光源72被放射之亮視野光31係經照明用之透鏡74、半反射鏡76、鏡筒78內之接物鏡80等，而當作平行光束被照射至被檢查物11之被檢查面11a。再者，缺陷檢測單元8a具備有暗視野觀察用之暗視野光源82。從暗視野光源82被放射之暗視野光33經過鏡筒78內之反射鏡84等，在光束傾斜於被檢查物11之被檢查面11a之狀態下被照射。 The defect detecting unit 8a is provided with a bright field light source 72 for bright field observation. The bright field light 31 emitted from the bright field light source 72 is subjected to the lens 74 for illumination, the half mirror 76, the objective lens 80 in the lens barrel 78, and the like, and is irradiated to the object 11 to be inspected as a parallel beam. Face 11a. Further, the defect detecting unit 8a is provided with a dark-field light source 82 for dark-field observation. The dark-field light 33 emitted from the dark-field light source 82 passes through the mirror 84 or the like in the lens barrel 78, and is irradiated in a state where the light beam is inclined to the inspection surface 11a of the inspection object 11.
在半反射鏡76之上方，設置有聚光在被檢查面11a被反射之反射光而進行成像的成像透鏡86。在成像透鏡86之更上方配置有包含CCD、CMOS等之攝影元件之攝影單元88。攝影單元88生成與在成像透鏡86所形成的影像對應的畫像。 Above the half mirror 76, an imaging lens 86 that collects the reflected light reflected by the inspection surface 11a and images it is provided. A photographing unit 88 including a photographing element such as a CCD or a CMOS is disposed above the imaging lens 86. The photographing unit 88 generates an image corresponding to the image formed by the imaging lens 86.
在使用如此構成之缺陷檢測單元8a的缺陷檢測工程中，首先將亮視野光31及暗視野光33調整成適合於亮視野觀査或暗視野觀査的光量。而且，使保持台6繞Z軸之周圍旋轉，同時使缺陷檢測單元8在Y軸方向移動。依此，檢查之對象區域在被檢查面11a上以描繪螺旋之方式移動。 In the defect detection process using the defect detecting unit 8a configured as described above, the bright field light 31 and the dark field light 33 are first adjusted to a light amount suitable for bright field observation or dark field observation. Further, the holding table 6 is rotated around the Z axis while the defect detecting unit 8 is moved in the Y-axis direction. Accordingly, the inspection target area moves on the inspected surface 11a in a manner of drawing a spiral.
在該移動之間，若藉由攝影單元88攝影被檢查物11之被檢查面11a時，可以取得因應亮視野光31及 暗視野光33之光量的畫像，在被檢查面11a之大概全體檢測出缺陷之分布。另外，藉由亮視野之觀查朝向例如檢測出刮傷或缺損等之缺陷，藉由暗視野的觀查朝向例如檢測出附著物等之缺陷。 Between the movements, when the inspection surface 11a of the inspection object 11 is photographed by the photographing unit 88, the bright field light 31 can be obtained. The image of the amount of light of the dark-field light 33 detects the distribution of defects on the entire surface of the inspection surface 11a. In addition, for example, a defect such as a scratch or a defect is detected by a bright field of view, and a defect such as an attached object is detected by, for example, a dark field of view.
再者，在藉由缺陷檢測單元可以一次觀察的區域非常寬廣之情況等，即使不一定要使保持台6繞Z軸周圍旋轉，或使缺陷檢測單元8在Y軸方向移動亦可。 In addition, in a case where the area which can be observed at one time by the defect detecting means is very wide, the holding stage 6 does not have to be rotated around the Z-axis or the defect detecting unit 8 can be moved in the Y-axis direction.
圖9為示意性表示與變形例有關之檢查裝置2a之主要的背面側的斜視圖。另外，與變形例有關之檢查裝置2a之構成要素大多與上述檢查裝置2之構成要素共同。依此，對共同的構成要素賦予相同的符號省略詳細說明。如圖9所示般，與變形例有關之檢查裝置2a具備與第2變形例有關之缺陷檢測單元(缺陷檢測手段)8b以取代缺陷檢測單元8。 Fig. 9 is a perspective view schematically showing a main rear side of an inspection apparatus 2a according to a modification. Further, the components of the inspection apparatus 2a according to the modification are often the same as the components of the inspection apparatus 2. Therefore, the same components will be denoted by the same reference numerals, and the detailed description will be omitted. As shown in FIG. 9, the inspection apparatus 2a according to the modification includes a defect detecting means (defect detecting means) 8b according to the second modification instead of the defect detecting means 8.
與該第2變形例有關之缺陷檢測單元8b例如係被稱為影像掃描器等之畫像生成裝置，被構成在X軸方向中可以一次攝影被檢測面11a之全體而進行檢查。依此，藉由一面使該缺陷檢測單元8b在Y軸方向移動(掃描)，一面攝影、檢查被檢測面11a，可以在被檢查面11a之大概全體檢測出缺陷之分布。 The defect detecting unit 8b according to the second modification is, for example, an image generating device such as an image scanner, and is configured to inspect the entire detected surface 11a at a time in the X-axis direction. In this manner, by detecting (scanning) the defect detecting unit 8b in the Y-axis direction, the detected surface 11a is photographed and inspected, and the distribution of the defects can be detected on the entire surface of the surface to be inspected 11a.
另外，作為影像掃描器之方式，可舉出例如CCD方式或CIS方式等。但是，該些方式可以因應用途而任意選擇。再者，於使用與該第2變形例有關之缺陷檢測單元8b之情況下，無須使保持台6繞Z軸之周圍旋 轉。 Further, examples of the image scanner include a CCD method, a CIS method, and the like. However, these methods can be arbitrarily selected depending on the purpose. Further, in the case of using the defect detecting unit 8b according to the second modification, it is not necessary to rotate the holding table 6 around the Z axis. turn.
而且，亦可以使用同時具備上述缺陷檢測單元8和缺陷檢測單元8a之缺陷檢測單元(缺陷檢測手段)等。其他，與上述實施型態及變形例有關之構造、方法等只要在不脫離本發明之目的的範圍，可以適當變更而加以實施。 Further, a defect detecting unit (defect detecting means) or the like including the above-described defect detecting unit 8 and defect detecting unit 8a may be used. In addition, the structures, methods, and the like according to the above-described embodiments and modifications may be modified as appropriate without departing from the scope of the invention.
2‧‧‧檢查裝置 2‧‧‧Checking device
4‧‧‧基台 4‧‧‧Abutment
6‧‧‧保持台(被檢查物保持手段) 6‧‧‧ Keeping the table (inspection means to be inspected)
6a‧‧‧保持面 6a‧‧‧ Keep face
8‧‧‧缺陷檢測單元(缺陷檢測手段) 8‧‧‧ Defect detection unit (defect detection means)
10‧‧‧三次元測量單元(三次元測量手段) 10‧‧‧Three-dimensional measurement unit (three-dimensional measurement means)
12‧‧‧支撐構造 12‧‧‧Support structure
12a‧‧‧前面 12a‧‧‧ front
14‧‧‧第1移動機構 14‧‧‧1st mobile agency
16‧‧‧第1導軌 16‧‧‧1st rail
18‧‧‧移動塊 18‧‧‧moving block
20‧‧‧第1滾珠螺桿 20‧‧‧1st ball screw
22‧‧‧第1脈衝馬達 22‧‧‧1st pulse motor
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