TW201720566A - Wafer processing method comprising a modified layer forming step of forming a modified layer inside of the wafer W and a segmentation step of dividing the wafer W with a modified layer - Google Patents
Wafer processing method comprising a modified layer forming step of forming a modified layer inside of the wafer W and a segmentation step of dividing the wafer W with a modified layer Download PDFInfo
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
Abstract
Description
發明領域 本發明涉及一種照射對晶圓具有透射性的波長之脈衝雷射光束使改質層形成於晶圓內部之後，對晶圓施加外力將晶圓以改質層作為起點分割成複數個器件晶片之晶圓的加工方法。FIELD OF THE INVENTION The present invention relates to a pulsed laser beam having a wavelength that is transmissive to a wafer such that a modified layer is formed inside the wafer, and an external force is applied to the wafer to divide the wafer into a plurality of devices using the modified layer as a starting point. Wafer wafer processing method.
發明背景 在以分割預定線區進行區劃的表面上形成有IC、LSI等之器件的晶圓，係沿分割預定線進行分割，藉而分割成具有器件之一個個的器件晶片。將晶圓分割成一個個的晶片的方法有，例如，將對晶圓具有透射性的波長之脈衝雷射光束的聚光點定位到對應分割預定線之晶圓內部的位置，再沿分割預定線照射脈衝雷射光束以於晶圓內部形成改質層，並沿著形成有改質層之分割預定線施加外力，以改質層為起點將晶圓分割成一個個的器件晶片的方法(例如，參照以下之專利文獻1)。BACKGROUND OF THE INVENTION A wafer in which devices such as ICs and LSIs are formed on a surface which is divided by dividing a predetermined line region is divided along a predetermined dividing line, and is divided into device wafers having one device. The method of dividing the wafer into individual wafers is, for example, positioning a condensed spot of a pulsed laser beam having a wavelength that is transmissive to the wafer to a position corresponding to the inside of the wafer corresponding to the predetermined line, and then dividing the portion by the division A method in which a pulsed laser beam is irradiated to form a modified layer inside the wafer, and an external force is applied along a predetermined dividing line on which the modified layer is formed, and the wafer is divided into individual device wafers by using the modified layer as a starting point ( For example, refer to Patent Document 1) below.
先前技術文獻 [專利文獻] [專利文獻1]特開第4402708号公報[Patent Document 1] [Patent Document 1] Japanese Patent Publication No. 4402708
發明概要 [發明欲解決的課題] 然而，已經明確得知，如果將脈衝雷射光束的聚光點定位到和剛剛形成於晶圓內部的改質層相鄰的位置，並從晶圓的背面側沿著分割預定線照射脈衝雷射光束以於晶圓內部形成改質層，那麼就會出現雷射光束在照射脈衝雷射光束的面(背面)和相反側的表面上發生散射，衝擊形成於表面的器件使其受損的新問題。SUMMARY OF THE INVENTION [Problems to be Solved by the Invention] However, it has been clarified that if the condensed spot of the pulsed laser beam is positioned adjacent to the reforming layer newly formed inside the wafer, and from the back side of the wafer The side irradiates the pulsed laser beam along the dividing line to form a modified layer inside the wafer, and then the laser beam is scattered on the surface (back side) and the opposite side of the laser beam irradiated with the pulse, and the impact is formed. A new problem of damage to the surface of the device.
這個問題，推測是起因於微細的龜裂(裂痕)從剛剛形成於晶圓內部的改質層往晶圓的厚度方向擴展，且接下來所照射的脈衝雷射光束照到該龜裂而發生折射或反射並照到器件。This problem is presumed to be caused by fine cracks (cracks) extending from the reforming layer formed immediately inside the wafer toward the thickness of the wafer, and the subsequent irradiated pulsed laser beam is incident on the crack. Refract or reflect and shine on the device.
本發明即是有鑑於上述情事而完成的，目的是希望在照射對晶圓具有透射性的波長之脈衝雷射光束以於晶圓內部形成改質層時，能夠利用透射光來防止器件受損的情形。The present invention has been made in view of the above circumstances, and an object thereof is to prevent a device from being damaged by transmitting light when a pulsed laser beam having a wavelength transmissive to a wafer is irradiated to form a modified layer inside the wafer. The situation.
用於解決課題的手段 本發明是利用，具備保持被加工物之保持機構、照射對被該保持機構保持著的被加工物具有透射性之波長的脈衝雷射光束以於被加工物的內部形成改質層之雷射光束照射機構、和使該保持機構和該雷射光束照射機構相對地進行加工進給之加工進給機構的雷射加工裝置，對表面上有由複數條分割預定線區劃而形成之複數個器件的晶圓進行加工之晶圓的加工方法，其特徵在於包含：將對晶圓具有透射性的波長之脈衝雷射光束的聚光點定位於晶圓的內部，從晶圓背面將脈衝雷射光束照射到對應於該分割預定線的區域，並使該保持機構和該雷射光束照射機構相對地進行加工進給，在晶圓內部形成改質層之改質層形成步驟，和，實施該改質層形成步驟後，對晶圓施加外力而以該改質層為分割起點將晶圓沿該分割預定線進行分割之分割步驟；該改質層形成步驟至少包含，將該脈衝雷射光束的聚光點定位於晶圓表面側之第1深度的位置並照射該脈衝雷射光束以形成第1改質層之第1步驟，和，將該脈衝雷射光束的聚光點定位於從該第1改質層隔開預定間隔之背面側的第2深度的位置並照射該脈衝雷射光束以形成第2改質層之第2步驟；在該改質層形成步驟中，脈衝雷射光束的輸出被設定成，從該第1改質層及該第2改質層產生的龜裂是不會碰到接下來所照射之脈衝雷射光束的長度，且該預定間隔被設定成從該第1改質層及該第2改質層產生的龜裂彼此不相連的間隔。Means for Solving the Problem The present invention is directed to a pulsed laser beam having a wavelength for maintaining a transmittance of a workpiece held by the holding mechanism and holding the holding means for holding the workpiece to form a workpiece. a laser beam irradiation mechanism of the reforming layer and a laser processing device for processing the feeding mechanism for processing the feeding mechanism by the holding mechanism and the laser beam irradiation mechanism, the surface of which is divided by a plurality of predetermined lines And a method for processing a wafer on which a plurality of devices are formed, wherein the method comprises: positioning a condensed spot of a pulsed laser beam having a wavelength transmissive to a wafer inside the wafer, and The circular back surface irradiates the pulsed laser beam to a region corresponding to the predetermined dividing line, and the holding mechanism and the laser beam irradiation mechanism are processed and fed in opposite directions, and a modified layer formed of the modified layer is formed inside the wafer. a step of dividing the wafer along the dividing line by applying an external force to the wafer and performing the step of dividing the wafer along the dividing line by using the modifying layer as a dividing starting point after the step of forming the modifying layer The reforming layer forming step includes at least a first step of positioning the condensed spot of the pulsed laser beam at a first depth of the wafer surface side and illuminating the pulsed laser beam to form the first modified layer And locating the condensed spot of the pulsed laser beam at a position at a second depth on the back side of the predetermined interval from the first modified layer, and illuminating the pulsed laser beam to form a second modified layer a second step; in the reforming layer forming step, the output of the pulsed laser beam is set such that the crack generated from the first modified layer and the second modified layer does not hit the next irradiation The length of the pulsed laser beam is set such that the cracks generated from the first modified layer and the second modified layer are not connected to each other.
發明的效果 本發明之晶圓的加工方法包含：於晶圓內部形成改質層之改質層形成步驟，和，對晶圓施加外力而以改質層為分割起點將晶圓沿分割預定線進行分割之分割步驟；改質層形成步驟至少包含，將脈衝雷射光束的聚光點定位於晶圓表面側之第1深度的位置並照射脈衝雷射光束以形成第1改質層之第1步驟，和，將脈衝雷射光束的聚光點定位於從第1改質層隔開預定間隔之背面側的第2深度的位置並照射脈衝雷射光束以形成第2改質層之第2步驟；由於在改質層形成步驟中，脈衝雷射光束的輸出被設定成，從第1改質層及第2改質層產生的龜裂是不會碰到接下來所照射之脈衝雷射光束的長度，且預定間隔設定成從第1改質層及第2改質層產生的龜裂彼此不相連的間隔，因此從第1改質層及第2改質層產生的龜裂不會有在晶圓的厚度方向上延長擴展的情事。而且，由於從第1改質層及第2改質層產生的龜裂彼此不會相連而長長地連接，因此接下來所照射的脈衝雷射光束不會照到剛剛形成的龜裂，從而能夠抑制反射．散射的情形，可以防止器件受損傷的情事。Advantageous Effects of Invention The method for processing a wafer according to the present invention includes a step of forming a modified layer in which a modified layer is formed inside a wafer, and applying an external force to the wafer and using the modified layer as a starting point for dividing the wafer along the dividing line Performing a segmentation step of dividing; the reforming layer forming step includes at least positioning a condensed spot of the pulsed laser beam at a first depth of the wafer surface side and illuminating the pulsed laser beam to form a first modified layer In one step, the condensing point of the pulsed laser beam is positioned at a position of the second depth on the back side of the predetermined interval from the first modified layer, and the pulsed laser beam is irradiated to form the second modified layer. 2 steps; since the output of the pulsed laser beam is set in the reforming layer forming step, the crack generated from the first modified layer and the second modified layer does not hit the pulsed Ray which is irradiated next The length of the beam is set at a predetermined interval so that the cracks generated from the first modified layer and the second modified layer are not connected to each other, and therefore the cracks generated from the first modified layer and the second modified layer are not There will be an extension in the thickness direction of the wafer. Further, since the cracks generated from the first modified layer and the second modified layer are not connected to each other and are connected long, the pulsed laser beam to be irradiated next does not shine on the newly formed crack, thereby Can suppress reflections. In the case of scattering, the device can be prevented from being damaged.
較佳實施例之詳細說明 圖1所示之雷射加工裝置1具有基台2，基台2的Y軸方向後部直立設置著在Z軸方向延伸的支柱3。基台2的上面2a安裝著保持被加工物之保持機構4。使保持機構4旋轉預定角度的旋轉機構5則連接到保持機構4。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The laser processing apparatus 1 shown in Fig. 1 has a base 2, and a pillar 3 extending in the Z-axis direction is erected in the rear portion of the base 2 in the Y-axis direction. A holding mechanism 4 for holding a workpiece is attached to the upper surface 2a of the base 2. The rotation mechanism 5 that rotates the holding mechanism 4 by a predetermined angle is connected to the holding mechanism 4.
在支柱3的前方安裝著照射對保持機構4所保持的被加工物具有透射性的波長之脈衝雷射光束以於被加工物的內部形成改質層之雷射光束照射機構6。雷射光束照射機構6至少具備發射脈衝雷射光束的振盪器7，和用於將振盪器7所發射之脈衝雷射光束聚光於被加工物內部的所要求的位置之聚光器8。振盪器7中具備調整脈衝雷射光束的輸出之輸出調整部，和重複頻率設定部。雷射光束照射機構6能夠在上下方向(Z軸方向)移動，可以使聚光器8上下移動，藉以將對於被加工物的脈衝雷射光束的聚光位置調整到所要求的位置。A laser beam irradiation mechanism 6 that irradiates a pulsed laser beam having a wavelength that is transmissive to the workpiece held by the holding mechanism 4 to form a modified layer inside the workpiece is attached to the front side of the pillar 3. The laser beam irradiation mechanism 6 is provided with at least an oscillator 7 that emits a pulsed laser beam, and a concentrator 8 for concentrating a pulsed laser beam emitted from the oscillator 7 at a desired position inside the workpiece. The oscillator 7 includes an output adjustment unit that adjusts an output of the pulsed laser beam, and a repetition frequency setting unit. The laser beam irradiation mechanism 6 is movable in the vertical direction (Z-axis direction), and the concentrator 8 can be moved up and down to adjust the condensing position of the pulsed laser beam to the desired position to the desired position.
保持機構4的下方安裝著使保持機構4與雷射光束照射機構6相對地進行加工進給之加工進給機構20。加工進給機構20具備在X軸方向延伸的滾珠螺桿21、連接於滾珠螺桿21之一端的馬達22、和滾珠螺桿21平行地延伸之一對導軌23，和從下方支承保持機構4之移動基座24。移動基座24的一個面在一對導軌23上形成滑動接觸，滾珠螺桿21則螺合於形成在移動基座24的中央部之螺帽。馬達22使滾珠螺桿21旋轉時，移動基座24就能夠沿著導軌23在X軸方向上移動，使得保持機構4在X軸方向上移動。Below the holding mechanism 4, a machining feed mechanism 20 that feeds and feeds the holding mechanism 4 and the laser beam irradiation mechanism 6 is attached. The machining feed mechanism 20 includes a ball screw 21 extending in the X-axis direction, a motor 22 connected to one end of the ball screw 21, a pair of guide rails 23 extending in parallel with the ball screw 21, and a moving base supporting the holding mechanism 4 from below. Block 24. One surface of the moving base 24 is in sliding contact with the pair of guide rails 23, and the ball screw 21 is screwed to a nut formed at a central portion of the moving base 24. When the motor 22 rotates the ball screw 21, the moving base 24 can move in the X-axis direction along the guide rail 23, so that the holding mechanism 4 moves in the X-axis direction.
基台2的上面2a配設著在與加工進給機構20之加工進給方向(X軸方向)直交的方向(Y軸方向)上，使保持機構4及加工進給機構20進行分度進給之分度進給機構30。分度進給機構30具備在Y軸方向延伸的滾珠螺桿31、連接於滾珠螺桿31之一端的馬達32、與滾珠螺桿31平行地延伸之一對導軌33，和從下方支承保持機構4及加工進給機構20的移動基座34。移動基座34的一個面在一對導軌33上形成滑動接觸，滾珠螺桿31則螺合於形成在移動基座34的中央部之螺帽。馬達32使滾珠螺桿31旋轉時，移動基座34就能夠沿著導軌33在Y軸方向上移動，使保持機構4及加工進給機構20在Y軸方向上進行分度進給。The upper surface 2a of the base 2 is disposed in a direction (Y-axis direction) orthogonal to the machining feed direction (X-axis direction) of the machining feed mechanism 20, and the holding mechanism 4 and the machining feed mechanism 20 are indexed. The indexing mechanism 30 is given to it. The index feeding mechanism 30 includes a ball screw 31 extending in the Y-axis direction, a motor 32 connected to one end of the ball screw 31, a pair of guide rails 33 extending in parallel with the ball screw 31, and a holding mechanism 4 and processing from below. The moving base 34 of the feed mechanism 20. One surface of the moving base 34 is in sliding contact with the pair of guide rails 33, and the ball screw 31 is screwed to a nut formed at a central portion of the moving base 34. When the motor 32 rotates the ball screw 31, the moving base 34 can move in the Y-axis direction along the guide rail 33, and the holding mechanism 4 and the machining feed mechanism 20 can be indexed in the Y-axis direction.
接著將用雷射加工裝置1，就圖2所示的加工晶圓W之晶圓的加工方法做說明。晶圓W是要被施行雷射加工之圓形板狀的加工物之一例，具有例如，由矽(Si)形成的基板。在這種基板的表面Wa上由複數條分割預定線S區劃成的區域中形成有複數個器件D。表面Wa與相反側的背面Wb都是後述的脈衝雷射光束會入射的被照射面。Next, the processing method of the wafer for processing the wafer W shown in FIG. 2 will be described using the laser processing apparatus 1. The wafer W is an example of a circular plate-shaped workpiece to be subjected to laser processing, and has, for example, a substrate formed of bismuth (Si). A plurality of devices D are formed in a region defined by a plurality of predetermined dividing lines S on the surface Wa of such a substrate. The surface Wa and the back surface Wb on the opposite side are both irradiated surfaces into which a pulsed laser beam to be described later enters.
雖然未圖示出，不過，在晶圓W的表面Wa上黏貼著例如，保護膠帶。晶圓W之黏貼在表面Wa上的保護膠帶側被保持於圖1所示之保持機構4，背面Wb則朝上露出。接著，通過加工進給機構20使保持著晶圓W的保持機構4在X軸方向上移動，使晶圓W移動到雷射光束照射機構6的下方。Although not illustrated, for example, a protective tape is adhered to the surface Wa of the wafer W. The protective tape side of the wafer W adhered to the surface Wa is held by the holding mechanism 4 shown in Fig. 1, and the back surface Wb is exposed upward. Next, the processing mechanism 20 moves the holding mechanism 4 holding the wafer W in the X-axis direction to move the wafer W below the laser beam irradiation mechanism 6.
(1)改質層形成步驟 利用雷射光束照射機構6，將對晶圓W具有透射性的波長之脈衝雷射光束的聚光點定位於晶圓W內部之所希望的位置，從晶圓W的背面Wb將脈衝雷射光束照射到對應於分割預定線S的區域，並且使保持機構4與雷射光束照射機構6相對地進行加工進給，在晶圓W內部形成改質層。改質層形成步驟是例如設定成下述加工條件而實施。另外，改質層形成步驟在實施上至少包含以下所說明之第1步驟和第2步驟。(1) The reforming layer forming step uses the laser beam irradiation mechanism 6 to position the condensed spot of the pulsed laser beam having the wavelength of the transmissive wafer W at a desired position inside the wafer W, from the wafer The back surface Wb of W irradiates the pulsed laser beam to a region corresponding to the division planned line S, and the holding mechanism 4 is processed in advance with respect to the laser beam irradiation mechanism 6, and a modified layer is formed inside the wafer W. The reforming layer forming step is carried out, for example, by setting the following processing conditions. Further, the reforming layer forming step includes at least the first step and the second step described below.
[加工條件] 光源 ：YAG脈衝雷射 波長 ：1342nm 平均輸出 ：0.8W 重複頻率 ：60kHz 點徑 ：1.5 μm 脈衝寬 ：10 ns 加工進給速度 ：700mm／s[Processing conditions] Light source: YAG pulse laser Wavelength: 1342nm Average output: 0.8W Repeat frequency: 60kHz Dot diameter: 1.5 μm Pulse width: 10 ns Machining feedrate: 700mm/s
(1-1)第1步驟 從雷射光束照射機構6向晶圓W照射脈衝雷射光束，如圖3所示地，在晶圓W的內部形成第1改質層10。具體而言，雷射光束照射機構6使聚光器8往接近晶圓W的方向下降，將對晶圓W具有透射性的波長(1342nm)之脈衝雷射光束LB1的聚光點9a調整成定位在靠近晶圓W的表面Wa側之第1深度H1的位置。晶圓W的表面Wa與第1深度H1之間的距離101被設定為，例如，60～70μm。而且，脈衝雷射光束LB1的輸出被設定於低輸出，使得從形成於晶圓W的內部之第1改質層10產生的龜裂(裂痕)不會在晶圓W的厚度方向上加長擴展 。(1-1) First Step The laser beam is irradiated from the laser beam irradiation unit 6 to the wafer W, and as shown in Fig. 3, the first modified layer 10 is formed inside the wafer W. Specifically, the laser beam irradiation mechanism 6 lowers the concentrator 8 in the direction toward the wafer W, and adjusts the condensing point 9a of the pulsed laser beam LB1 having a wavelength (1342 nm) having transparency to the wafer W to Positioned at a position close to the first depth H1 on the surface Wa side of the wafer W. The distance 101 between the surface Wa of the wafer W and the first depth H1 is set to, for example, 60 to 70 μm. Further, the output of the pulsed laser beam LB1 is set to a low output so that cracks (cracks) generated from the first modified layer 10 formed inside the wafer W do not lengthen in the thickness direction of the wafer W. .
接著， 一邊使晶圓W以預定的加工進給速度(700mm／s)，在例如，X1方向上進行加工進給，同時圖1所示之雷射光束照射機構6沿分割預定線S，從晶圓W的背面Wb側照射脈衝雷射光束LB1，在晶圓W內部形成強度降低之第1改質層10。此外，第1改質層10的長度L1在，例如，30μm左右。Next, while the wafer W is fed at a predetermined processing feed speed (700 mm/s) in the X1 direction, for example, the laser beam irradiation mechanism 6 shown in Fig. 1 is along the division planned line S, The pulsed laser beam LB1 is irradiated on the back surface Wb side of the wafer W, and the first modified layer 10 having a reduced strength is formed inside the wafer W. Further, the length L1 of the first modified layer 10 is, for example, about 30 μm.
在圖3之例中，因為從形成於晶圓W內部之第1改質層10的端部在晶圓W之厚度方向上產生的龜裂11短，所以接下來所照射之脈衝雷射光束LB1不會有照到從剛剛形成之第1改質層10產生的龜裂11，致其透射光在龜裂11進行折射或反射的情形。如此地處理，沿圖2所示之一列分割預定線S照射脈衝雷射光束LB1，在晶圓W的內部形成第1改質層10。In the example of FIG. 3, since the crack 11 generated in the thickness direction of the wafer W from the end portion of the first modified layer 10 formed inside the wafer W is short, the pulsed laser beam irradiated next is irradiated. LB1 does not have a crack 11 which is generated from the first modified layer 10 which has just been formed, so that the transmitted light is refracted or reflected by the crack 11. In this way, the pulsed laser beam LB1 is irradiated along the one line division planned line S shown in FIG. 2, and the first modified layer 10 is formed inside the wafer W.
(1-2)第2步驟 實施完第1步驟後，沿著在第1步驟中形成了第1改質層10之分割預定線S，從雷射光束照射機構6向晶圓W照射脈衝雷射光束，如圖4所示地，在晶圓W的內部形成第2改質層12。在第2步驟中也是將脈衝雷射光束LB2的輸出設定成低輸出，使得從形成於晶圓W內部之第2改質層12所產生的龜裂不會在晶圓W的厚度方向上加長擴展。(1-2) After the second step is performed in the second step, the laser beam irradiation mechanism 6 is irradiated with the pulse Ray from the laser beam irradiation mechanism 6 along the division planned line S in which the first modified layer 10 is formed in the first step. As shown in FIG. 4, the second light-modifying layer 12 is formed inside the wafer W. In the second step, the output of the pulsed laser beam LB2 is also set to a low output so that cracks generated from the second modified layer 12 formed inside the wafer W are not lengthened in the thickness direction of the wafer W. Expansion.
圖1所示之雷射光束照射機構6使聚光器8往背離晶圓W的方向上昇，如圖4所示地，將對晶圓W具有透射性的波長(1342nm)之脈衝雷射光束LB2的聚光點9b調整成，定位在從聚光點9a向上方隔開預定間隔100之靠近晶圓W的背面Wb側之第2深度H2的位置。預定間隔100是第1改質層10與第2改質層12之間的間隔，亦即，第1深度H1與第2深度H2之間的間隔。The laser beam irradiation mechanism 6 shown in Fig. 1 raises the concentrator 8 in a direction away from the wafer W. As shown in Fig. 4, a pulsed laser beam having a wavelength (1342 nm) which is transmissive to the wafer W is used. The condensing point 9b of the LB 2 is adjusted so as to be positioned at a position spaced apart from the condensing point 9a by a predetermined interval 100 toward the second depth H2 on the side of the back surface Wb of the wafer W. The predetermined interval 100 is an interval between the first modified layer 10 and the second modified layer 12, that is, an interval between the first depth H1 and the second depth H2.
為了使，特別是從第2改質層12產生的龜裂13，不會因為第1改質層10及第2改質層12的龜裂彼此相連，而往晶圓W的背面Wb側加長擴展，預定間隔100被設定成使得從第1改質層10及第2改質層12產生的龜裂彼此不會相連的間隔。預定間隔100宜設定在，例如，45～120 μm之間。In order to prevent the cracks 13 generated from the second modified layer 12 in particular, the cracks of the first modified layer 10 and the second modified layer 12 are not connected to each other, and the back surface Wb side of the wafer W is lengthened. The expansion, the predetermined interval 100 is set such that the cracks generated from the first modified layer 10 and the second modified layer 12 are not connected to each other. The predetermined interval 100 is preferably set to, for example, between 45 and 120 μm.
接著，一邊以預定的加工進給速度(700mm／s)使晶圓W往例如X2方向進行加工進給，同時，圖1所示之雷射光束照射機構6沿形成第1改質層10之分割預定線S，從晶圓W的背面Wb側照射脈衝雷射光束LB2，在晶圓W的內部使強度降低之第2改質層12形成於第1改質層10之上。此外，第2改質層12的長度L2為，例如，30μm左右。Then, the wafer W is processed and fed in, for example, the X2 direction at a predetermined processing feed speed (700 mm/s), and the laser beam irradiation mechanism 6 shown in FIG. 1 is formed along the first modified layer 10. The predetermined line S is divided, and the pulsed laser beam LB2 is irradiated from the back surface Wb side of the wafer W, and the second modified layer 12 having a reduced intensity inside the wafer W is formed on the first modified layer 10. Further, the length L2 of the second modified layer 12 is, for example, about 30 μm.
和第1改質層10同樣地，因為從第2改質層12的端部往晶圓W的厚度方向生出之龜裂13很短，所以不會有接下來所照射之脈衝雷射光束LB2照在從剛剛形成的第2改質層12產生的龜裂13上，以致其透射光在龜裂13發生折射或反射的情形。而且，因為在第1改質層10與第2改質層12之間設了預定間隔100，所以在第2步驟中不會有，從第1改質層10產生的龜裂11和從第2改質層產生的龜裂13相連而在晶圓W的厚度方向上加長擴展的情事。此外，即使脈衝雷射光束LB2的漏光LB2’在，例如從第1改質層10產生的龜裂11上，發生反射、散射等而照到器件，也因為能量已經衰減，所以不會有特別地對器件造成不良影響的情事。Similarly to the first modified layer 10, since the crack 13 generated from the end portion of the second modified layer 12 toward the thickness direction of the wafer W is short, there is no pulse laser beam LB2 to be irradiated next. It is irradiated on the crack 13 generated from the second modified layer 12 which has just been formed, so that the transmitted light is refracted or reflected by the crack 13. Further, since the predetermined interval 100 is provided between the first modified layer 10 and the second modified layer 12, the crack 11 and the second generated from the first modified layer 10 are not present in the second step. 2 The cracks 13 generated by the modified layer are connected to each other to lengthen the expansion in the thickness direction of the wafer W. Further, even if the leak light LB2' of the pulsed laser beam LB2 is reflected, scattered, etc. on the crack 11 generated from the first modified layer 10, for example, since the energy has been attenuated, there is no special Ground causes adverse effects on the device.
如此地處理，將第1步驟與第2步驟當成1組，對一列分割預定線S進行雷射加工。脈衝雷射光束LB1及脈衝雷射光束LB2所照射之分割預定線S的轉換係，以圖1所示之分度進給機構30，通過使保持機構4在Y軸方向上進行分度進給的方式實施。並且，沿著所有的分割預定線S，重複實施第1步驟及第2步驟，在晶圓W內部形成成為分割起點的第1改質層10及第2改質層12。In this way, the first step and the second step are grouped into one group, and laser processing is performed on one line of the planned dividing line S. The conversion system of the divided predetermined line S irradiated by the pulsed laser beam LB1 and the pulsed laser beam LB2 is indexed by the indexing feed mechanism 30 shown in FIG. 1 by the holding mechanism 4 in the Y-axis direction. The way to implement. Then, the first step and the second step are repeated along all the division planned lines S, and the first modified layer 10 and the second modified layer 12 which are the starting points of the division are formed inside the wafer W.
(2)分割步驟 實施過改質層形成步驟後，對晶圓W施加外力，以第1改質層10及第2改質層12為分割起點，沿分割預定線S分割晶圓W。晶圓W的分割也可以利用，例如，以研磨石進行的背面研磨來實施。這種情況是利用旋轉的研磨石一邊按壓晶圓W的背面Wb，一邊使晶圓W薄化直至達到所要求的厚度為止，並且藉由研磨動作使第1改質層10及第2改質層12成為分割起點，將晶圓W分割成一個個具有器件D的器件晶片。(2) Dividing step After the reforming layer forming step is performed, an external force is applied to the wafer W, and the first modified layer 10 and the second modified layer 12 are used as the dividing starting points, and the wafer W is divided along the dividing line S. The division of the wafer W can also be performed, for example, by back grinding with a grinding stone. In this case, the wafer W is thinned until the desired thickness is obtained by pressing the back surface Wb of the wafer W by the rotating grinding stone, and the first modified layer 10 and the second modified layer are polished by the polishing operation. The layer 12 serves as a starting point for the division, and the wafer W is divided into individual device wafers having the device D.
分割步驟也可以採用例如，擴張法來實施。這種情況是，在彈性膠帶黏貼於晶圓W的背面Wb的狀態下，使該彈性膠帶放射狀地擴展，藉以對晶圓W的內部施加外力，不耐外力的第1改質層10及第2改質層12就成為分割起點，晶圓W因而被分割成一個個具有器件D的器件晶片。這種情況要在上述改質層形成步驟之前，先使晶圓W薄化到所要求的厚度。這麼做而分割成的器件晶片則由未圖示出的搬出機構等拾取並搬送到下一個步驟。The segmentation step can also be carried out using, for example, an expansion method. In this case, in a state where the elastic tape is adhered to the back surface Wb of the wafer W, the elastic tape is radially expanded, whereby an external force is applied to the inside of the wafer W, and the first modified layer 10 which is not resistant to external force and The second modified layer 12 becomes the starting point of the division, and the wafer W is thus divided into individual device wafers having the device D. In this case, the wafer W is thinned to a desired thickness before the reforming layer forming step. The device wafer divided into this is picked up by a unloading mechanism or the like (not shown) and transferred to the next step.
像這樣，晶圓的加工方法中所包含的改質層形成步驟，在實施上至少包含將脈衝雷射光束LB1的聚光點9a定位於靠近晶圓W的表面Wa側之第1深度H1的位置，並照射脈衝雷射光束LB1以形成第1改質層10之第1步驟，和，將脈衝雷射光束LB2的聚光點9b定位於從第1改質層10隔開預定間隔100之靠近背面Wb側的第2深度H2的位置，並照射脈衝雷射光束LB2以形成第2改質層12之第2步驟；在改質層形成步驟中，由於脈衝雷射光束的輸出被設定成，從第1改質層10及第2改質層12產生的龜裂11, 13是不會碰到接下來所照射之脈衝雷射光束的長度，而且，預定間隔100係設定成，從第1改質層10及第2改質層12產生的龜裂彼此不相連的間隔，因此，從第1改質層10及第2改質層12產生的龜裂11, 13不會有在晶圓W的厚度方向上加長擴展的現象，也不會有從第1改質層10及第2改質層12產生的龜裂彼此相連而加長的情事。 因此，之前被脈衝雷射光束LB1、LB2照射到而剛剛形成的龜裂11, 13，碰到接下來所照射之脈衝雷射光束LB1、LB2而發生反射．散射的情形得到抑制，能夠防止形成於晶圓W的表面Wa之器件D受到損傷。In this manner, the reforming layer forming step included in the method of processing a wafer includes, at least, positioning the condensed spot 9a of the pulsed laser beam LB1 at a first depth H1 close to the surface Wa side of the wafer W. Positioning and illuminating the pulsed laser beam LB1 to form the first modified layer 10, and positioning the focused spot 9b of the pulsed laser beam LB2 at a predetermined interval 100 from the first modified layer 10. The second step of forming the second modified layer 12 near the position of the second depth H2 on the back side Wb side and irradiating the pulsed laser beam LB2; in the reforming layer forming step, the output of the pulsed laser beam is set to The cracks 11 and 13 generated from the first modified layer 10 and the second modified layer 12 do not hit the length of the pulsed laser beam to be irradiated next, and the predetermined interval is set to 100. Since the cracks generated by the modified layer 10 and the second modified layer 12 are not connected to each other, the cracks 11, 13 generated from the first modified layer 10 and the second modified layer 12 are not crystallized. The length W is elongated and expanded in the thickness direction, and the cracks generated from the first modified layer 10 and the second modified layer 12 are not connected to each other. Length of circumstances. Therefore, the cracks 11, 13, which have just been formed by the pulsed laser beams LB1, LB2, are reflected by the pulsed laser beams LB1, LB2 which are irradiated next. The scattering is suppressed, and the device D formed on the surface Wa of the wafer W can be prevented from being damaged.
在本實施形態所示之改質層形成步驟中，雖然說明了在晶圓W的內部形成2個改質層(第1改質層10及第2改質層12)的情形，但是形成於晶圓W內部之改質層的數目並不限於。例如，可以在2個改質層之外再加上第3改質層而於晶圓W的內部形成3個改質層，也可以在3個改質層之外再加上第4改質層而於晶圓W的內部形成4個改質層。在這種情況中，各改質層之間的間隔還是要設定成，從各改質層產生的龜裂彼此不會相連的間隔。In the reforming layer forming step shown in the present embodiment, the case where two modified layers (the first modifying layer 10 and the second modifying layer 12) are formed inside the wafer W has been described, but it is formed in The number of reforming layers inside the wafer W is not limited. For example, three modified layers may be added to the inside of the wafer W in addition to the two modified layers, or the fourth modified layer may be added in addition to the three modified layers. Layers and four modified layers are formed inside the wafer W. In this case, the interval between the reforming layers is also set such that the cracks generated from the respective modified layers are not connected to each other.
實施例1 接著，一邊參照圖5，一邊說明從晶圓W內部的改質層所生出之龜裂延伸而在晶圓W的表面Wa發生之損傷的發生數及器件D的分割率之評估實驗。在本實施例中所實驗的是，形成於晶圓W內部之第1改質層10與第2改質層12之間的預定間隔如果設定成什麼程度的間隔就可以得到良好的結果。晶圓W採用的是形成直徑300mm且厚度775μm，表面上並被覆著鋁膜100nm之矽晶圓。從晶圓W的表面Wa到第1改質層10為止的距離設定為60μm。在20～140μm之間每隔10μm間隔地設定第1改質層10與第2改質層12的預定間隔，對各個晶圓W實施和上述改質層形成步驟及上述分割步驟相同的加工，測定發生於晶圓W的表面Wa之損傷(鋁膜上的損傷)的個數及器件D的分割率。以發生在晶圓W的中央部之分割預定線S的1行上之損傷個數的計數結果作為損傷的發生數。而，器件D的分割率則是將實際完成分割之器件D的個數，除以能夠從1片晶圓W取得之總器件數算出來的。Embodiment 1 Next, an evaluation of the number of occurrences of damage occurring on the surface Wa of the wafer W and the division ratio of the device D from the crack extension generated by the modified layer inside the wafer W will be described with reference to FIG. experiment. In the present embodiment, it was experimentally obtained that a predetermined interval between the first modified layer 10 and the second modified layer 12 formed inside the wafer W was excellent in results. The wafer W was formed by forming a silicon wafer having a diameter of 300 mm and a thickness of 775 μm and having a surface of 100 nm covered with an aluminum film. The distance from the surface Wa of the wafer W to the first modified layer 10 was set to 60 μm. The predetermined interval between the first modified layer 10 and the second modified layer 12 is set at intervals of 10 μm between 20 and 140 μm, and the same processing as the above-described modified layer forming step and the dividing step is performed for each wafer W. The number of damage (damage on the aluminum film) occurring on the surface Wa of the wafer W and the division ratio of the device D were measured. The count result of the number of damages occurring on one line of the dividing line S of the center portion of the wafer W is taken as the number of occurrences of the damage. On the other hand, the division ratio of the device D is calculated by dividing the number of devices D actually divided, by the total number of devices that can be obtained from one wafer W.
如圖5的圖表所示，第1改質層10與第2改質層12的預定間隔在20～40μm之間時，器件D的分割率雖然有100%，但是晶圓W的表面Wa上出現10個以上的損傷。預定間隔在45μm～120μm之間時，晶圓W的表面Wa上並無損傷的發生，而且器件D的分割率也有100%。而，預定間隔如果在120μm以上，晶圓W的表面Wa上雖無損傷的發生，器件D的分割率卻會降低到60～70%左右。As shown in the graph of FIG. 5, when the predetermined interval between the first modified layer 10 and the second modified layer 12 is between 20 and 40 μm, the division ratio of the device D is 100%, but the surface Wa of the wafer W is on the surface Wa. More than 10 injuries have occurred. When the predetermined interval is between 45 μm and 120 μm, no damage occurs on the surface Wa of the wafer W, and the division ratio of the device D is also 100%. On the other hand, if the predetermined interval is 120 μm or more, no damage occurs on the surface Wa of the wafer W, and the division ratio of the device D is reduced to about 60 to 70%.
像這樣，確認了預定間隔狹窄(20～40μm)時，雖然可以從1片晶圓W取得所有的器件D，但是在晶圓W的表面Wa卻出現了許多的損傷。另一方面，確認了預定間隔寬(120μm以上)時，晶圓W的表面Wa上雖然未出現損傷，但是器件D的分割率卻變差。從而，確認將預定間隔設定為45～120μm時，可以獲得最好的結果。When it was confirmed that the predetermined interval was narrow (20 to 40 μm), all of the devices D could be obtained from one wafer W, but a large amount of damage occurred on the surface Wa of the wafer W. On the other hand, when the predetermined interval width (120 μm or more) was confirmed, although the damage was not observed on the surface Wa of the wafer W, the division ratio of the device D was deteriorated. Therefore, it was confirmed that the best results were obtained when the predetermined interval was set to 45 to 120 μm.
1‧‧‧雷射加工裝置
2‧‧‧基台
2a‧‧‧上面
3‧‧‧支柱
4‧‧‧保持機構
5‧‧‧旋轉機構
6‧‧‧雷射光束照射機構
7‧‧‧振盪器
8‧‧‧聚光器
9a,9b‧‧‧聚光點
10‧‧‧第1改質層
100‧‧‧預定間隔
101‧‧‧距離
11‧‧‧龜裂
12‧‧‧第2改質層
13‧‧‧龜裂
20‧‧‧加工進給機構
21‧‧‧滾珠螺桿
22‧‧‧馬達
23‧‧‧導軌
24‧‧‧移動基座
30‧‧‧分度進給機構
31‧‧‧滾珠螺桿
32‧‧‧馬達
33‧‧‧導軌
34‧‧‧移動基座
D‧‧‧器件
S‧‧‧分割預定線
W‧‧‧晶圓
H1‧‧‧第1深度
H2‧‧‧第2深度
L1‧‧‧長度
L2‧‧‧長度
LB‧‧‧脈衝雷射光束
LB1‧‧‧脈衝雷射光束
LB2‧‧‧脈衝雷射光束
LB2’‧‧‧露光
Wa‧‧‧晶圓的表面
Wb‧‧‧晶圓的背面1‧‧‧ Laser processing equipment
2‧‧‧Abutment
2a‧‧‧above
3‧‧‧ pillar
4‧‧‧ Keeping institutions
5‧‧‧Rotating mechanism
6‧‧‧Laser beam illumination mechanism
7‧‧‧Oscillator
8‧‧‧ concentrator
9a, 9b‧‧‧ spotlights
10‧‧‧1st modified layer
100‧‧‧ scheduled interval
101‧‧‧ distance
11‧‧‧ crack
12‧‧‧2nd modified layer
13‧‧‧ crack
20‧‧‧Processing feed mechanism
21‧‧‧Rolling screw
22‧‧‧Motor
23‧‧‧ rails
24‧‧‧Mobile base
30‧‧‧Dividing feed mechanism
31‧‧‧Ball screw
32‧‧‧Motor
33‧‧‧rails
34‧‧‧Mobile base
D‧‧‧ devices
S‧‧‧ dividing line
W‧‧‧ wafer
H1‧‧‧1st depth
H2‧‧‧2nd depth
L1‧‧‧ length
L2‧‧‧ length
LB‧‧‧pulse laser beam
LB1‧‧‧pulse laser beam
LB2‧‧‧pulse laser beam
LB2'‧‧‧Luguang
Wa‧‧‧ wafer surface
The back of the Wb‧‧ wafer
【圖1】雷射加工裝置的構成之示意斜視圖。 【圖2】晶圓之一例的示意斜視圖。 【圖3】表示改質層形成步驟(第1步驟)之部分放大斷面圖。 【圖4】表示改質層形成步驟(第2步驟)之部分放大斷面圖。 【圖5】損傷發生數及器件之分割率的實驗結果示意圖。Fig. 1 is a schematic perspective view showing the configuration of a laser processing apparatus. Fig. 2 is a schematic perspective view showing an example of a wafer. Fig. 3 is a partially enlarged cross-sectional view showing a reforming layer forming step (first step). Fig. 4 is a partially enlarged cross-sectional view showing a reforming layer forming step (second step). [Fig. 5] Schematic diagram of experimental results of the number of occurrences of damage and the division ratio of the device.
9a,9b‧‧‧聚光點 9a, 9b‧‧‧ spotlights
10‧‧‧第1改質層 10‧‧‧1st modified layer
11‧‧‧預定間隔 11‧‧‧ scheduled interval
12‧‧‧第2改質層 12‧‧‧2nd modified layer
13‧‧‧龜裂 13‧‧‧ crack
100‧‧‧預定間隔 100‧‧‧ scheduled interval
H1‧‧‧第1深度 H1‧‧‧1st depth
H2‧‧‧第2深度 H2‧‧‧2nd depth
LB2‧‧‧脈衝雷射光束 LB2‧‧‧pulse laser beam
LB2’‧‧‧露光 LB2’‧‧‧Luguang
W‧‧‧晶圓 W‧‧‧ wafer
Wa‧‧‧晶圓的表面 Wa‧‧‧ wafer surface
Wb‧‧‧晶圓的背面 The back of the Wb‧‧ wafer
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| JP2015238413A JP2017107903A (en) | 2015-12-07 | 2015-12-07 | Processing method of wafer |
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| JP (1) | JP2017107903A (en) |
| KR (1) | KR20170067141A (en) |
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| JP7081993B2 (en) * | 2018-06-19 | 2022-06-07 | 株式会社ディスコ | Processing method of work piece |
| JP7233816B2 (en) * | 2019-02-19 | 2023-03-07 | 株式会社ディスコ | Wafer processing method |
| CN113710408B (en) * | 2019-04-19 | 2023-10-31 | 东京毅力科创株式会社 | Processing apparatus and processing method |
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| JP2005268752A (en) * | 2004-02-19 | 2005-09-29 | Canon Inc | Method of laser cutting, workpiece and semiconductor-element chip |
| JP5580826B2 (en) * | 2009-08-11 | 2014-08-27 | 浜松ホトニクス株式会社 | Laser processing apparatus and laser processing method |
| JP6353683B2 (en) * | 2014-04-04 | 2018-07-04 | 浜松ホトニクス株式会社 | Laser processing apparatus and laser processing method |
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