TW201717216A - 異向導電性膜及連接構造體 - Google Patents

異向導電性膜及連接構造體 Download PDF

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Publication number
TW201717216A
TW201717216A TW105116838A TW105116838A TW201717216A TW 201717216 A TW201717216 A TW 201717216A TW 105116838 A TW105116838 A TW 105116838A TW 105116838 A TW105116838 A TW 105116838A TW 201717216 A TW201717216 A TW 201717216A
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Taiwan
Prior art keywords
anisotropic conductive
conductive film
film
terminal
conductive particles
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TW105116838A
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English (en)
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TWI691977B (zh
Inventor
Shinichi Hayashi
Masao Saito
Yasushi Akutsu
Reiji Tsukao
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Dexerials Corp
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Publication of TW201717216A publication Critical patent/TW201717216A/zh
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Publication of TWI691977B publication Critical patent/TWI691977B/zh

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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/16—Non-insulated conductors or conductive bodies characterised by their form comprising conductive material in insulating or poorly conductive material, e.g. conductive rubber
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Abstract

本發明之異向導電性膜1A包含絕緣接著劑層10、及配置於該絕緣接著劑層10之導電粒子2。於異向導電性膜1A中，粒子間距P1之導電粒子2之排列軸A1沿異向導電性膜1A之大致膜寬度方向延伸，且該排列軸A1於異向導電性膜1A之長邊方向上以軸間距P2連續地排列。於將由異向導電性膜1A連接之電子零件之端子排列區域與異向導電性膜1A以各端子之長邊方向與膜寬度方向一致之方式重疊之情形時，以於各端子21上存在3個以上且40個以下之導電粒子2之方式，根據端子21之外形決定排列軸A1中之粒子間距P1、排列軸之軸間距P2、及排列軸A1與膜寬度方向所成之角度(排列軸之傾斜角)θ。藉此，即便於微間距之連接，亦可使用異向導電性膜獲得穩定之連接可靠性，且抑制導電粒子之過度之密度增加。

Description

異向導電性膜及連接構造體
本發明係關於一種異向導電性膜及由異向導電性膜連接而成之連接構造體。
異向導電性膜於將IC晶片等電子零件安裝於基板時被廣泛使用。近年來，於行動電話、筆記型電腦等小型電子機器中，要求配線之高密度化，作為使異向導電性膜應對該高密度化之方法，已知有將導電粒子呈格子狀均等配置於異向導電性膜之絕緣接著劑層之技術。
然而，即便均等配置導電粒子，亦會產生連接電阻不均一之問題。其原因在於：於異向導電性連接前，位於端子之邊緣上之導電粒子因絕緣性接著劑之熔融而流出至間隔，難以被上下之端子夾著。針對該問題，提出：將導電粒子之第1排列方向設為異向導電性膜之長邊方向，使與第1排列方向交叉之第2排列方向相對於與異向導電性膜之長邊方向正交之方向傾斜5°以上且15°以下(專利文獻1)
先前技術文獻
專利文獻
專利文獻1：日本專利4887700號公報
然而，若由異向導電性膜連接之電子零件之端子尺寸進一步變小，則可由端子捕捉之導電粒子之數量亦進一步變少，於專利文獻1所記載之異向導電性膜存在無法充分地獲得導通可靠性之情形。尤其是於將液晶畫面等之控制用IC連接於玻璃基板上之透明電極之所謂COG(Chip on Glass)連接中，因伴隨液晶畫面之高精細化之多端子化與IC晶片之小型化而導致端子尺寸變小，又，於進行將電視之顯示器用玻璃基板與軟性印刷配線板(FPC：Flexible Printed Circuits)連接之FOG(Film on Glass)連接之情形時，端子亦成為微間距，使可由端子捕捉之導電粒子數增加而提高連接可靠性成為課題。
對此，作為使由端子捕捉之導電粒子數增加之方法，考慮提高異向導電性膜中之導電粒子之密度。然而，若於異向導電性膜中提高導電粒子之密度，則會產生異向導電性膜之製造成本變高之問題。
又，若使由端子捕捉之導電粒子過度地增加，則由於微間距化而端子個數本身不斷增加，伴隨於此，於異向導電性連接時端子之壓入所需之按壓力變得過高，於習知之連接裝置中良好之異向導電性連接變得困難。因此，產生為了導入或改良用以應對按壓力之增加之裝置而耗費成本之問題。
因此，本發明之課題在於：即便於微間距之FOG連接或COG連接中，亦可使用異向導電性膜獲得穩定之連接可靠性，且抑制伴隨導電 粒子之密度增加之異向導電性膜其製造成本的上升，又，於習知之設備能夠進行異向導電性連接。
本發明人發現：於使用導電粒子以特定之粒子間距排列之排列軸於異向導電性膜之長邊方向上連續地排列的異向導電性膜，且使電子零件之端子之長邊方向與該異向導電性膜之膜寬度方向一致之情形時，若以3個以上且40個以下之導電粒子位於各端子之方式，根據端子之外形決定導電粒子之排列軸中之粒子間距、該排列軸之軸間距、及排列軸與膜寬度方向所成之角度(以下，稱為排列軸之傾斜角)，則能夠一方面確保充分之導通可靠性，一方面減少無助於連接之導電粒子，又，於在特定之面積之區域存在特定個數之導電粒子，使該區域之導電粒子之排列軸於異向導電性膜之寬度方向上傾斜，且使該區域於異向性導電膜之長邊方向上重複存在之情形時，亦能夠一方面確保充分之導通可靠性，一方面減少無助於連接之導電粒子，從而想到了本發明。
即，提供一種異向導電性膜，其包含絕緣接著劑層、及配置於該絕緣接著劑層之導電粒子，且特定之粒子間距之導電粒子之排列軸沿異向導電性膜之大致膜寬度方向延伸，且該排列軸於異向導電性膜之長邊方向上以特定之軸間距連續地排列， 於將由異向導電性膜連接之電子零件之端子排列區域與異向導電性膜以各端子之長邊方向與膜寬度方向一致之方式重疊之情形時，以於各端子上存在3個以上且40個以下導電粒子之方式，根據端子之外形決定排列軸 中之粒子間距、排列軸之軸間距、及排列軸之傾斜角。
又，若將本發明轉換為另一種表達，則提供一種異向性導電膜，其包含絕緣接著劑層、及配置於該絕緣接著劑層之導電粒子，且於任意選擇之長度為膜之長邊方向之5~400μm、且寬度為膜寬度之區域中，存在3~3200個導電粒子，於該區域中，特定之粒子間距之導電粒子之排列軸與異向導電性膜之膜寬度方向斜交，且該排列軸於異向導電性膜之長邊方向上並列。
進而，本發明提供一種連接構造體，其係利用上述異向導電性膜將第1電子零件與第2電子零件異向導電性連接。
根據本發明之異向導電性膜，於使由該異向導電性膜連接之電子零件之端子之長邊方向與該膜寬度方向一致之情形時，於各端子存在3個以上之導電粒子，因此能夠對使用異向導電性膜之連接構造體賦予充分之導通可靠性。於該情形時，除了使異向導電性膜之膜寬度方向與端子之長邊方向一致以外，無需異向導電性膜與端子之對位。
又，由於存在於各端子之導電粒子之數量為40個以下，故而無助於連接之導電粒子不會過度地增加，而能夠抑制伴隨導電粒子之密度增加之異向導電性膜其製造成本的上升，又，能夠適當地調整被端子捕捉之導電粒子數，因此亦能夠省略導入新的連接設備。
進而，根據本發明之異向導電性膜，由於根據由該異向導電性膜連接之電子零件之端子之外形來規定導電粒子之排列軸中之粒子間距、該排列軸之軸間距、及排列軸之傾斜角，故而能夠準確地控制每個端 子之導電粒子之個數。
若就另一觀點來看本發明之異向導電性膜，則於任意選擇之長度為膜之長邊方向5~400μm、且寬度為膜寬度之區域中，存在3~3200個導電粒子，於該區域中，特定之粒子間距之導電粒子之排列軸與異向導電性膜之膜寬度方向斜交，且該排列軸於異向導電性膜之長邊方向上並列，因此，無助於連接之導電粒子之個數不會過度地增加，而能夠抑制伴隨導電粒子之密度增加之異向導電性膜之製造成本的上升。
1A、1B、1C、1D‧‧‧異向導電性膜
2、2a、2b、2c‧‧‧導電粒子
3a、3b‧‧‧導電粒子之排列區域
4‧‧‧緩衝區域
5‧‧‧與對準標記對應之導電粒子排列區域
10‧‧‧絕緣接著劑層
20‧‧‧IC晶片、電子零件
21‧‧‧輸出側端子、凸塊
22a、22b‧‧‧輸出側端子之角隅部、端部
24‧‧‧輸入側端子、凸塊
25‧‧‧側端子
A1、A2‧‧‧排列軸
D‧‧‧粒徑
L1‧‧‧端子長度
L2‧‧‧端子寬度
L3‧‧‧端子之對角線之長度
L4‧‧‧端子間距離
L5‧‧‧1間距與端子長度L1之矩形之對角線之長度
P1‧‧‧粒子間距
P2‧‧‧軸間距
θ‧‧‧排列軸相對於膜寬度方向之角度(傾斜角)
圖1係異向導電性膜1A中之導電粒子之配置圖。
圖2A係圖1之導電粒子之配置中軸間距最小之情形時的放大圖。
圖2B係圖1之導電粒子之配置中軸間距最大之情形時的放大圖。
圖3A係圖2A所示之導電粒子之配置圖之變形例。
圖3B係圖2B所示之導電粒子之配置圖之變形例。
圖4係異向導電性膜1B中之導電粒子之配置圖。
圖5係異向導電性膜1C中之導電粒子之配置圖。
圖6係異向導電性膜1D中之導電粒子之配置圖。
圖7係實施例1、2之異向導電性膜中之導電粒子之配置圖。
圖8係實施例3、7之異向導電性膜中之導電粒子之配置圖。
圖9係實施例4、8之異向導電性膜中之導電粒子之配置圖。
圖10係實施例5、9之異向導電性膜中之導電粒子之配置圖。
圖11係實施例6、10之異向導電性膜中之導電粒子之配置圖。
圖12係比較例2之異向導電性膜中之導電粒子之配置圖。
以下，一面參照圖式，一面對本發明進行詳細說明。再者，各圖中，相同符號表示相同或同等之構成要素。
圖1係本發明之一實施例之異向導電性膜1A中之導電粒子2的配置圖，圖2A係與圖1之配置圖之輸出側端子對應之導電粒子之排列區域之放大圖，且為軸間距最小之情形時之圖，圖2B係相同之放大圖且為軸間距最大之情形時之圖。
該異向導電性膜1A具有絕緣接著劑層10、及配置於絕緣接著劑層10之導電粒子2。導電粒子2係以特定之粒子間距P1沿大致異向導電性膜1A之膜寬度方向延伸，但形成有相對於膜寬度方向稍微傾斜之排列軸A1，該排列軸A1於異向導電性膜1A之長邊方向上以特定之軸間距P2連續地形成。
於圖1中，極細之矩形之輪廓線表示由該異向導電性膜1A連接之IC晶片等電子零件20之端子面，以點塗滿之矩形區域表示電子零件20之輸出側端子21與輸入側端子24。輸出側端子21與輸入側端子24分別具有特定之端子寬度與端子長度，且以特定之端子間距於端子寬度方向上排列。因此，若使電子零件20之端子21、24之長邊方向與異向導電性膜1A之膜寬度方向一致，則端子21、24於異向導電性膜1A之膜長邊方向上排列。
該異向導電性膜1A具有於1個端子可存在3個以上之導電 粒子2之排列軸A1，且以由3條以上之此種排列軸橫穿各端子21、24之方式，根據該端子21、24之外形決定排列軸A1之粒子間距P1、軸間距P2、排列軸A1之傾斜角θ，藉此於各端子21、24上存在3個以上且40個以下之導電粒子2。
更具體而言，如圖2A、圖2B所示，於將導電粒子2之排列軸A1設為通過位於矩形之輸出側端子21之對角之角隅部的導電粒子2a、2b與中央部之導電粒子2c之直線的情形時，將端子21之端子長度設為L1，將端子寬度設為L2，將端子之對角線之長度設為L3，將端子間距離設為L4，將1間距(端子寬度L2+端子間距離L4)與端子長度L1之矩形中之對角線之長度設為L5，且將導電粒子2之粒徑設為D時，能夠如下式般求出排列軸A1與異向導電性膜之膜寬度方向所成之角度θ。
圖2A之情形Tanθ=(L2-D)/(L1-D)≒L2/L1 式(1)
圖2B之情形Tanθ=(L2+L4-D)/(L1-D)≒(L2+L4)/L1 式(2)
此處，於端子長度L1或端子寬度L2相對於導電粒子之粒徑D足夠大之情形時，可利用下式近似，(L2/L1)≦Tanθ≦(L2+L4)/L1。
又，若將端子21上之可存在於排列軸A1之導電粒子之最大數量設為n個，則排列軸A1中之粒子間距P1之範圍係根據下式而求出。
圖2A之情形 粒子間距P1=(L3-D)/(n-1)≒L3/2
圖2B之情形 粒子間距P1=(L5-D)/(n-1)≒L5/2
如圖2A所示般，於n=3且端子之對角線之長度L3相對於導電粒子之粒徑D足夠大之情形時，可與P1≒L3/2近似，如圖2B所示，可利用下式近似，P1≒L5/2。
排列軸A1之軸間距P2之範圍係根據下式而求出。
圖2A之情形 軸間距P2=(L2-D)/2
圖2B之情形 軸間距P2={(L2+L4)-D}/2
再者，於上述圖2A及圖2B所示之粒子配置中，導電粒子2a、2b存在於端子21之端部22a、22b。於該情形時，若於異向性連接時導電粒子2a、2b因樹脂流動等而自端子21之端部22a、22b即便稍微偏移，則導電粒子之捕捉數亦會減少。因此，為了在設計上具有彈性，如圖3A及圖3B所示般，亦可將導電粒子2配置於端子21之較端部22a、22b更靠內側。具體而言，作為導電粒子之排列之最小之重複單位的單位形狀(單位格子)係只要自端子21之外周部以導電粒徑D之1~3倍程度之長度將導電粒子2配置於端子21之內側即可。藉由在膜之長邊方向上重複該單位形狀，而僅使膜之寬度方向與端子之短邊方向一致便可使導電粒子之捕捉數穩定。
又，雖於圖2A~圖3B中未示出，但由於僅使膜之寬度方向與端子之長邊方向一致便可使捕捉數穩定，故而能夠於膜之寬度方向上亦重複排列之單位形狀。此於端子之長邊方向之長度較膜寬度短之情形時(例如COG連接)有效。另一方面，於端子之長邊方向之長度相較於膜寬度足 夠長之情形(例如FOG連接)時，無需於膜寬度方向上重複排列之單位形狀(單位格子)。於該情形時，於異向性連接時利用工具按壓之部分全部有助於連接。
於圖3A及圖3B所示之導電粒子2之配置之情形時，排列軸A1與異向導電性膜之膜寬度方向所成之角度θ1、粒子間距P1、軸間距P2可分別藉由在上述圖2A、圖2B所示之粒子配置中之其等之運算式中自L1、L2、L3或L5減去(0.5×D)~(3×D)而得之近似式求出。
於本發明中，就導通可靠性之方面而言，將被各端子捕捉之導電粒子數n設為3個以上。又，為了使導通可靠性更穩定，較佳為將該導電粒子數n設為5個以上，更佳為6個以上，進而更佳為10個以上。又，就不過度地提高導電粒子之個數密度之方面而言，將n設為40個以下。又，以相同之原因，較佳為35個以下，更佳為30個以下，進而較佳為20個以下。因此，1間距(L2+L4)內所存在之粒子數(即L1×(L2+L4)之區域內之個數)之上限值係由L2與L4之比率(所謂線與間隙(L/S))決定，為40×{(L2+L4)/L2}個以下。因此，個數密度之上限能夠根據以40×{(L2+L4)/L2個除以L1×(L2+L4)之面積所得之值而求得。
一般而言，於COG連接中，存在即便連接之IC晶片之外形尺寸不改變，端子之面積亦會變小或L/S變小之情況，但根據本發明，於此種情形時，亦根據輸出側端子21之外形決定排列軸A1之傾斜角θ、粒子間距P1、及軸間距P2，於膜之長邊方向上連續地形成排列軸A1，於任意之輸出側端子21之每1個配置3個以上且40個以下、較佳為5個以上且35個以下、更佳為10個以上且30個以下之導電粒子。因此，於使用該異 向導電性膜1A進行異向導電性連接之情形時，能夠確實地使端子捕捉導電粒子2，從而獲得良好之導通特性。又，能夠防止過度地提高導電粒子之個數密度，抑制伴隨導電粒子之個數密度之增加而異向導電性膜之製造成本上升之情況。同時，亦能夠將按壓力抑制於適當之範圍。
再者，用來以每1個輸出側端子為3個以上且40個以下之形式配置導電粒子之排列軸A1之傾斜角θ、粒子間距P1及軸間距P2並不限定於圖2A、圖2B、圖3A、圖3B所示之導電粒子2之配置。例如，亦可於滿足0≦Tanθ≦{(L2+L4)/L1}之範圍內決定排列軸A1之傾斜角θ。但是，就於異向導電性連接後，使被端子捕捉之導電粒子之個數之不均減少之方面而言，角度θ較佳為大於0°。
又，於輸入側端子24之端子寬度相對於電子零件20之輸出側端子21較大之情形時，用於輸入側端子24之連接之導電粒子2之排列軸A2與膜寬度方向所成的角度、粒子間距、及軸間距可與用於輸出側端子21之連接之導電粒子2之排列軸A1相同。換言之，於由異向導電性膜連接之電子零件具有端子尺寸或L/S不同之多個端子排列區域之情形時，於本發明中，於端子寬度或端子面積最小之端子排列之各端子捕捉3個以上且40個以下、較佳為5個以上且35個以下、更佳為10個以上且30個以下之導電粒子2。即便於電子零件存在大小不同之端子排列，亦能夠藉由對照較小尺寸之端子於一面配置導電粒子，而減少與電子零件對應之異向性導電膜之品種，因此能夠抑制異向導電性膜之製造成本。
於本發明中，為了確保導通可靠性且抑制連接裝置所需之按壓力之負擔增加，導電粒子之配置區域3a、3b中之導電粒子2之密度較佳 為7.5~80000個/mm2，更佳為25~70000個/mm2，進而較佳為100~60000個/mm2。該粒子密度係根據導電粒子2之粒徑與端子寬度、端子長度、排列態樣而適當進行調整。
又，於本發明中，導電粒子所存在之位置亦可適當設定。例如於COG連接之情形時，由於膜寬度方向之兩端部分為用於連接之區域，故而只要以能夠充分覆蓋該部分之方式設定導電粒子之配置區域3a、3b即可。即，於圖1所示之異向導電性膜1A中，隔著未配置導電粒子之緩衝區域4於異向導電性膜1A之長邊方向上連續地形成有導電粒子之排列區域3a與導電粒子之排列區域3b，該導電粒子之排列區域3a與於矩形狀之長邊側端部附近具有端子行之假定用於一般之COG之IC晶片的電子零件20之輸出側端子21對應，該導電粒子之排列區域3b與輸入側端子24對應。藉由如此般根據電子零件之端子排列而設置多行導電粒子之排列區域，亦能夠減少無助於連接之導電粒子，從而抑制異向導電性膜之製造成本。再者，緩衝區域4中不僅包含完全不存在導電粒子之區域，而且只要不對異向性連接帶來障礙，亦可包含導電粒子不配置成特定之有規則之排列的區域。藉由容許存在此種區域，即便為包含若干導電粒子之配置不良者，亦能夠作為異向導電性膜之製品而提供，且能夠提高製品之良率，削減成本。
於本發明之異向導電性膜中，排列軸A1可相對於膜寬度方向傾斜，亦可平行，但若使其傾斜，則各端子中之導電粒子之捕捉性提高，就該方面而言較佳。又，為了與外形不同之端子對應，亦可根據端子之外形而存在傾斜角不同之多種排列軸A1、A2。
另一方面，於該異向導電性膜1A中，與電子零件20之對 準標記之外形對應之導電粒子排列區域5於異向導電性膜1A之長邊方向上週期性地形成。
一般而言，對準標記係為了使接合之電子零件之端子彼此對位而形成於電子零件。另一方面，於導電粒子均等地配置於異向導電性膜之情形時，無需將電子零件之端子與異向導電性膜之導電粒子之形成區域對位，因此不於異向導電性膜設置對準標記。
相對於此，於該異向導電性膜1A中，與輸出側端子21之排列對應的導電粒子之排列區域3a及與輸入側端子24之排列對應的導電粒子之排列區域3b個別地形成。因此，較佳為將與設置於貼合異向導電性膜1A之電子零件之對準標記對應的導電粒子排列區域5設置於異向導電性膜1A。藉由使導電粒子排列區域5與電子零件之對準標記一致，而使以下作業變得容易：使異向導電性膜1A之導電粒子之排列區域3a與電子零件20之輸出側端子21之排列區域一致，使異向導電性膜1A之導電粒子之排列區域3b與電子零件之輸入側端子24之排列區域一致。
再者，亦考慮將與電子零件之對準標記對應之標記用構件配置於異向導電性膜1A之絕緣接著劑層10，但因異向導電性膜之製造步驟上之制約而較難。又，亦考慮直接於絕緣接著劑層10加入戳記或切口等而進行標記，但對準標記過小，實際上難以進行標記之加工。
相對於此，若如上述導電粒子排列區域5般使用導電粒子之排列作為對準標記，則無需於異向導電性膜之製造步驟中追加新的步驟，又，於將異向導電性膜用於異向導電性連接之情形時亦不會產生特別之限制，而能夠將導電粒子之排列區域3a、3a與電子零件之輸出側端子21之排 列、輸入側端子24之排列對位。
又，由於在該異向導電性膜1A中將被端子21、24捕捉之導電粒子2之數量在確保連接之限度內減少，且使之排列，故而異向導電性膜1A之穿透性較高。因此，能夠毫無問題地自透明基板側透視而進行對準作業。因此，能夠提高IC晶片側之對準標記之設計自由度，能夠將IC晶片側之對準標記設置於端子之形成區域附近，從而提高對準精度。或者，使用高精度之CCD等，亦能夠將導電粒子之排列與透明基板之電極及IC晶片之端子直接對準。
又，於IC晶片側之對準標記為矩形狀且與端子具有相似性等之情形或設置與對準標記對應之導電粒子排列區域之情形時，期待藉由導電粒子之排列與IC晶片側之對準標記大致一致，而能夠以更高之精度進行IC晶片之對準。例如，於為了對準而自透明基板側使用CCD或雷射時，使焦點與導電粒子之排列(即異向導電性膜1A之內部)對準，藉此於IC晶片側之對準標記與透明基板之間設置基準點。若使用該基準點，則可期待更高精度地進行IC晶片側之對準標記之檢測。
本發明之異向導電性膜可採取各種態樣。例如，圖4所示之異向導電性膜1B係於圖1所示之異向導電性膜1A中，於異向導電性膜1A之長邊方向上週期性地形成有與電子零件之對準標記對應之導電粒子排列區域5者。藉此，由於電子零件之對準標記與導電粒子排列區域5之對位，故而能夠減小異向導電性膜於膜長邊方向上偏移之長度。
圖5所示之異向導電性膜1C係於圖1所示之異向導電性膜1A中無緩衝區域4，使對應於電子零件之輸出側端子21之導電粒子的排列 區域與對應於電子零件之輸入側端子24之導電粒子之排列區域連續者。藉此，亦能夠連接除輸出側端子21或輸入側端子24以外還具有側端子25之電子零件。亦能夠用於如進行FOG連接之情形般在電子零件之整個面設置有多個端子(行)之情形之連接。
再者，如圖5所示，於使導電粒子存在於膜一面之情形時，導電粒子之配置較佳為如上所述般對照端子寬度或端子面積最小之端子排列之端子而設計。
相對於此，亦可於與佈局不同之端子排列對應之每個區域使導電粒子之配置不同，但於斟酌設計導電粒子之排列之步驟數與導電粒子削減所產生之成本優點之情形時，針對電子零件之每種端子佈局設計排列並非上策。藉由利用一個異向導電性膜供應端子佈局不同之電子零件，能夠抑制異向導電性膜之品種之數量，發揮成本優點。於如上所述般以導電粒徑D之1~3倍程度之長度使端子配置之設計具有彈性之情形時，亦能夠期待此種經濟效果。
又，於圖1、圖4、圖5所示之異向性導電膜中，導電粒子之排列軸A1於異向性導電膜之長邊方向上以特定之間距連續地形成，藉此該異向性導電膜中之導電粒子之排列成為於異向性導電膜之長邊方向上具有格子軸者，但於本發明之異向導電性膜中，導電粒子之排列並不限定於此。例如，亦可如圖6所示之異向導電性膜1D般，排列軸A1分別於異向導電性膜之長邊方向上以特定之傾斜角且以特定之間距連續地形成。以此方式形成之導電粒子之格子狀之排列成為3個方向之格子軸分別與異向性導電膜之長邊方向及膜寬度方向斜交。藉此，能夠解決以下問題：異向性 連接時於對向之端子之緣部夾成一行之導電粒子集中自端子偏移，而導致導通不穩定。
又，如圖6所示，於連續地連接電子零件之情形時，亦可於將膜裁斷為特定長度之情形時之膜長邊方向之裁斷部位不配置粒子。再者，未配置該粒子之區域之膜長邊方向之長度作為一例為0.2~6mm。亦可作為連續進行連接之情形時之裁斷之記號。
於本發明中，亦可由多種導電粒子之排列軸形成導電粒子之排列。一個排列軸中之導電粒子之粒子間距亦可不固定，例如，亦可重複寬窄之間距。關於軸間距，亦可重複寬窄之間距。
若將本發明換為另一種表達，則導電粒子之排列軸可3條以上與端子之長邊方向斜交而存在。關於由本發明之異向導電性膜連接之端子之寬度或者端子之寬度與端子間間隔之合計(端子間距)之距離，最小作為一例為端子寬度5μm，最大為端子間距400μm。端子之寬度或端子間距之方向於一般之異向導電性膜中為膜之長邊方向。因此，於任意選擇之膜之長邊方向之長度5~400μm、且寬度為膜寬度之區域R中3條以上之導電粒子之排列軸斜交。此時之粒子個數最大於膜長邊方向5μm之區域中為3200個((400μm/5μm)×40個=3200個)，最小於膜長邊方向400μm之區域中為3個，較佳為6個。因此，稱為將膜之長邊方向上5~400μm與膜寬度進行積算所得之面積中為3~3200個、較佳為6~3200個之導電粒子作為與膜之長邊方向斜交之排列軸而並列之異向性導電膜。該區域R可於膜之長邊方向上任意選擇。
為了穩定地進行異向性連接，實用上較佳為，上述膜長邊方 向之5~400μm之區域同樣存在連續500組之長度、亦即最小5μm之區域同樣存在相當於2500μm之用於異向性連接之長度。為了更經濟地進行異向性連接，更佳為5000組之長度連續，進而更佳為10000組之長度連續。亦即，若以包含最小之5μm在內之最大400μm換算1組，則為了更經濟地進行異向性連接，較佳為20cm以上連續，更佳為2m以上連續，進而更佳為4m以上連續。
於本發明中，關於導電粒子2本身之構成或絕緣接著劑層10之層構成或構成樹脂，可採取各種態樣。
即，作為導電粒子2，可自公知之異向導電性膜所使用者中適當選擇而使用。例如，可列舉：鎳、鈷、銀、銅、金、鈀或焊錫等金屬粒子、金屬被覆樹脂粒子等。亦可併用2種以上。導電粒子之平均粒徑並無特別限定，較佳為1~100μm。又，導電粒徑較佳為相對於端子之寬度為50%以下，更佳為30%以下。導電粒徑之不均較佳為CV值成為25%以下。
作為絕緣接著劑層10，可適當採用公知之異向導電性膜中所使用之絕緣性樹脂層。例如，可使用：含有丙烯酸酯化合物與光自由基聚合起始劑之光自由基聚合型樹脂層、含有丙烯酸酯化合物與熱自由基聚合起始劑之熱自由基聚合型樹脂層、含有環氧化合物與熱陽離子聚合起始劑之熱陽離子聚合型樹脂層、含有環氧化合物與熱陰離子聚合起始劑之熱陰離子聚合型樹脂層等。該等樹脂層可視需要製成分別聚合而成者。又，亦可由多種樹脂層形成絕緣接著劑層10。
亦可視需要於絕緣接著劑層10中添加氧化矽微粒子、氧化鋁、氫氧化鋁等絕緣性填料。絕緣性填料之大小較佳為10~2000nm，摻合 量較佳為相對於形成絕緣接著劑層之樹脂100質量份設為1~60質量份。藉此，即便於異向導電性連接時絕緣接著劑層10熔融，亦能夠抑制因熔融之樹脂而導致導電粒子2無用地移動。
無論為單層抑或為積層體，絕緣接著劑層10之最低熔融黏度較佳為整體之最低熔融黏度為10~10000Pa‧s。若為該範圍，則能夠將導電粒子精密地固定於任意之位置，且於異向性連接中亦不會帶來障礙。亦能夠應對連接方法或連接之電子零件之多樣化。再者，關於最低熔融黏度，作為一例，可使用旋轉式流變計(TA instrument公司製造)，以升溫速度為10℃/分鐘、測定壓力為5g保持固定，使用直徑8mm之測定板而求得。
異向性導電膜之膜長度於實用上較佳為5m以上，更佳為10m以上，進而更佳為30m以上。又，上限並無特別限定，但由於不對習知之連接裝置實施過度之改造更能抑制異向性連接之成本，故而較佳為5000m以下，更佳為1000m以下，進而更佳為500m以下。再者，膜寬度並無特別限制，但為了使之不僅應對一般之電子零件之端子行區域，而且應對經窄邊緣化之端子行區域，較佳為0.3mm以上，於實用上進而較佳為0.5mm以上，就製造穩定性之觀點而言，進而更佳為0.6mm以上。上限雖並無特別限定，但一般而言為5mm以下。在將IC堆疊等用途中，存在要求寬於晶圓之情形，故而亦可為30cm左右。
異向導電性膜由於如上所述般形成為長條，故而可利用連接膠帶連接，又，亦可為被捲繞於捲芯之捲裝體。
作為將導電粒子2以上述配置固定於絕緣接著劑層10之方 法，利用機械加工或雷射加工、光微影法等公知之方法製作具有與導電粒子2之配置對應之凹陷的模具，將導電粒子放入至該模具，並於其上填充絕緣接著劑層形成用組成物，使之硬化，自模具取出即可。亦可根據此種模具，以剛性更低之材質製成模具。
又，為了將導電粒子2於絕緣接著劑層10設置成上述配置，亦可利用以下等方法，即，於絕緣接著劑層形成組成物層之上設置以特定之配置形成有貫通孔之構件，自其上供給導電粒子2，並使之通過貫通孔。
又，亦可製成排列有導電粒子之大小程度之突起之片體，於突起之頂面形成微黏著層，使導電粒子附著於該微黏著層，並轉印至絕緣性接著劑層。如此，關於本發明之異向性導電膜之製法，並無特別限定。
於使用本發明之異向導電性膜將由可撓性基板、玻璃基板等透明基板或剛性基板、陶瓷基板等非透明基板所構成之第1電子零件之端子與FPC、IC晶片、IC模組等第2電子零件之端子異向導電性連接的情形時，例如，使異向導電性膜1A之長邊方向與第1電子零件或第2電子零件之端子之短邊方向一致，進而使兩者之對準標記對準，並進行加熱加壓。又，將IC晶片或IC模組堆疊而僅將第2電子零件異向性連接之態樣亦包含於本發明中。再者，使用本發明之異向導電性膜連接之電子零件並不限定於該等。
本發明亦包含以此方式進行異向導電性連接之第1電子零件與第2電子零件的連接構造體。
實施例
以下，基於實施例，對本發明進行具體說明。
實施例1~11、比較例1、2
(1)COG連接用之異向導電性膜之製造
關於實施例1~11、比較例1、2，分別製備表1所示之組成之樹脂組成物，將其塗佈於膜厚度為50μm之PET膜上，於80℃之烘箱中使之乾燥5分鐘，於PET膜上分別按照以下所示之厚度而形成。
另一方面，使之與進行COG連接之基板之電極端子之配置對應，製作凸部週期性地具有特定之配置密度之排列圖案之模具(實施例1~11)或凸部以特定之配置密度隨機之配置之模具(比較例1)或僅於電極端子內之位置具有導電粒子之排列圖案之模具(比較例2，凸塊形成區域內之導電粒子密度為1800個/mm2(每1個凸塊5個導電粒子，對按照凸塊寬度15μm及凸塊間距離13μm共計28μm積算凸塊長度100μm而得到2800μm2。對其積算凸塊個數1300個所得之面積成為凸塊形成區域。(導電粒子5(個/凸塊)×凸塊個數1300)/(2800μm2×1300)=1800個/mm2)，使公知之透明性樹脂之顆粒以熔融之狀態流入至該模具，冷卻凝固， 藉此形成凹部為格子狀之圖案之樹脂模具。將導電粒子(積水化學工業(股份有限公司)，AUL704，粒徑4μm)填充至該樹脂模具之凹部，並於其上覆蓋上述第2絕緣性樹脂層，藉由以60℃、0.5MPa進行按壓而使之貼合。繼而，將絕緣性樹脂自模具剝離，於第2絕緣性樹脂層之存在導電粒子之側之界面以60℃、0.5MPa積層第1絕緣性樹脂層，藉此製造表1~3所示之實施例及比較例之異向導電性膜。
再者，關於進行COG連接之IC晶片與玻璃基板，其等之端子圖案對應，於任一實施例及比較例中均於膜面之整個面形成有導電粒子排列區域。又，於實施例1、2及比較例1、2中，進行COG連接之晶片之尺寸之詳細情況如以下所示，於其他實施例中，進行COG連接之晶片係將凸塊之尺寸如表2、表3所示般改變而成者。再者，隨著凸塊寬度及凸塊間間隔之變更，凸塊個數適當進行調整。又，於表示該等實施例之圖7~圖11中，為了易於理解本發明中之異向性連接之效果，而將導電粒子配置於圖中左上之凸塊之角部。因此，於將膜暫時貼附於玻璃基板或IC之搭載作業中，花費少許工夫。
又，於IC晶片中，凸塊行形成於沿著IC晶片之對向之長邊側之邊之對向之區域。關於凸塊行間之距離，凸塊長度為100μm者為1.5mm，凸塊長度為50μm者為1.6mm。
IC晶片
外形1.8×20mm，厚度0.5mm
厚度0.2mm
凸塊規格鍍金，高度12μm，尺寸15×100μm，凸塊間距離13μm， 凸塊個數1300個(於外形之長邊側以650個為單位排列)
對準標記100μm×100μm
玻璃基板
玻璃材質 康寧公司製造
外形30×50mm
厚度0.5mm
電極ITO配線
(2)評估
將各實施例及比較例之異向導電性膜夾於表2~表4所示之凸塊尺寸之IC晶片與對應於其之玻璃基板之間，進行加熱加壓(180℃、80MPa、5秒)而獲得評估用連接物，對該評估用連接物進行以下之試驗。
於該情形時，關於玻璃基板與異向導電性膜之對位，於具有與對準標記對應之導電粒子形成區域(100μm×100μm)之異向導電性膜(不對每單位面積之導電粒子個數密度造成影響之程度的個數)中，首先，一面利用立體顯微鏡確認導電粒子形成區域，一面以人工作業進行玻璃基板與異向導電性膜之對位，並暫時貼附於玻璃基板。之後，以60℃、2Mpa、1秒進行暫時壓接。繼而，將暫時壓接於玻璃基板之異向導電性膜與IC晶片對位，並進行加熱加壓而將連接IC晶片，從而獲得評估用連接物。此處，於IC晶片之連接時使用倒裝晶片接合機FC1000(東麗工程(股份有限公司))。
另一方面，於使用沒有與對準標記對應之導電粒子形成區域之異向導電性膜將IC晶片與玻璃基板連接之情形時，除了以於玻璃基板之 相當於端子之位置如表所記載之圖般配置導電粒子之方式進行與異向導電性膜之對位以外，以與具有對應於對準標記之導電粒子形成區域之異向導電性膜相同之方式獲得玻璃基板與IC晶片之評估用連接物。於該方法中，向玻璃基板暫時貼附所需要之時間稍微變長。
於異向導電性膜向玻璃基板之貼合中，膜對準係將與圖中所記載者大致一致者設為0%，將刻意地使連接之IC之端子寬度之50%於膜之長邊方向(端子之寬度方向)上偏移所得者設為50%。
關於各者，如以下所示般對(a)連接前之端子上之粒子數、(b)初始導通特性、(c)導通可靠性、(d)短路發生率進行評估。
(a)連接前之端子上之粒子數
藉由自玻璃面側觀察評估用連接前之端子200個，而調查載置於每1個端子之可捕捉之導電粒子數，按照以下之基準進行評估。
A：10個以上
B：5個以上且未達10個
C：3個以上且未達5個
D：未達3個
(b)初始導通特性
測定評估用連接物之導通電阻，按照以下之基準進行評估。
OK：未達2Ω
NG：2Ω以上
(c)導通可靠性
將評估用連接物放置於溫度85℃、濕度85%RH之恆溫槽中500小時， 測定導通電阻，按照以下之基準進行評估。
OK：未達8Ω
NG：8Ω以上
(d)短路發生率
準備以下之IC(7.5μm間隔之梳齒TEG(test element group))作為短路發生率之評估用IC。
外徑1.5×13mm
厚度0.5mm
凸塊規格鍍金，高度15μm，尺寸25×140μm，凸塊間距離7.5μm
將各實施例及比較例之異向導電性膜夾於短路發生率之評估用IC與對應於該評估用IC之圖案之玻璃基板之間，以與評估用連接物之製作相同之連接條件進行加熱加壓而獲得連接物，並求出該連接物之短路發生率。短路發生率係由「短路之發生數/7.5μm間隔總數」而算出。
若短路發生率為200ppm以上，則就製造實用上之連接構造體之方面而言不佳。因此，按照以下之基準對算出之短路發生率進行評估。
OK：未達200ppm
NG：200ppm以上
根據表2~4，以於每1個凸塊存在4~5個導電粒子之方式配置導電粒子之實施例1~11之異向導電性膜儘管導電粒子之粒子個數密度低至數千個/mm2，但於不存在膜之對準偏移之情形時自不待言，即便為50%以上，導通特性亦良好。
又，作為於實施例3及實施例8中導電粒子亦配置於凸塊之角部以外之情形之例，對圖8之凸塊長邊方向上之傾斜角度及凸塊寬度方向之粒子間距進行調整。具體而言，關於位於圖中左上之凸塊之角部之導電粒子與位於緊靠其之右下之導電粒子，導電粒子之配置於凸塊寬度方向上以粒徑之1.4倍偏移。根據實施例3及實施例8毫不遜色於其他實施例之結果可知，即便膜於膜之長邊方向上偏移，捕捉數亦穩定。
相對於此，於比較例1中，雖然不論有無對準偏移，導通特性均良好，但由於粒子個數密度較高，故而短路發生率較差，異向導電性膜之製造成本亦變高。
於比較例2中，可知：由於成為相對於端子平行之排列，故而於對準無偏移之情形時，為相對較低之粒子個數密度，可獲得良好之導通特性，但若存在對準偏移，則導通特性極其差。
又，相對於比較例2，以膜長邊方向之對準偏移設為0%，於膜之短邊方向(端子之長邊方向)上偏移端子長度之50%之方式將膜貼合，除此以外，以相同之方式進行評估。其結果為，膜長邊方向之對準偏移即便為0%，亦連接不良。
其次，於實施例1~11中，與上述同樣地，以膜長邊方向之對準偏移設為0%，於膜之短邊方向(端子之長邊方向)上偏移端子長度之 50%之方式將膜貼合，除此以外，以相同之方式進行評估。獲得最低限度之導通性能。進而，即便於膜之長邊方向(端子之短邊方向)上偏移50%，亦可獲得最低限度之導通性能。
若對具有與對準標記對應之導電粒子形成區域之異向導電性膜(實施例2~6)與不具有與對準標記對應之導電粒子形成區域之異向導電性膜(實施例7~11)進行比較，則無論有無對準標記，均可獲得同等之異向性連接性能。即，除了將異向性導電膜暫時貼附於玻璃基板之時間稍微變長以外，可獲得幾乎不變之結果。再者，於本實施例中，藉由人工作業進行膜向玻璃基板之暫時貼附，但生產線上之異向性連接係藉由機械操作進行暫時貼附，因此認為對準標記之有無於生產線不會特別成為問題。
除了於實施例1~11之排列圖案中，以IC晶片之凸塊行間距離之90%成為緩衝區域之方式形成模具以外，以相同之方式獲得實施例12~22之異向導電性膜。進行於膜之寬度方向上偏移0%、50%之評估，獲得與實施例1~11大致同等之結果。
1A‧‧‧異向導電性膜
2‧‧‧導電粒子
3a、3b‧‧‧導電粒子之排列區域
4‧‧‧緩衝區域
5‧‧‧與對準標記對應之導電粒子排列區域
10‧‧‧絕緣接著劑層
20‧‧‧IC晶片、電子零件
21‧‧‧輸出側端子、凸塊
24‧‧‧輸入側端子、凸塊
A1、A2‧‧‧排列軸

Claims (9)

  1. 一種異向導電性膜，其包含絕緣接著劑層、及配置於該絕緣接著劑層之導電粒子，且特定之粒子間距之導電粒子之排列軸沿異向導電性膜之大致膜寬度方向延伸，且該排列軸於異向導電性膜之長邊方向上以特定之軸間距連續地排列，於將由異向導電性膜連接之電子零件之端子排列區域與異向導電性膜以各端子之長邊方向與膜寬度方向一致之方式重疊之情形時，以於各端子上存在3個以上且40個以下導電粒子之方式，根據端子之外形決定排列軸中之粒子間距、排列軸之軸間距、及排列軸與膜寬度方向所成之角度(以下，稱為排列軸之傾斜角)。
  2. 如申請專利範圍第1項之異向導電性膜，其中，於由異向導電性膜連接之電子零件具有排列間距不同之多個端子排列區域之情形時，根據上述多個端子排列區域所包含之端子中之寬度或面積最小之端子的外形決定排列軸中之粒子間距、排列軸之軸間距、及排列軸之傾斜角。
  3. 如申請專利範圍第1或2項之異向導電性膜，其中，排列軸具有於1個端子可存在3個以上之導電粒子之粒子間距與傾斜角，且3條以上之排列軸橫穿各端子。
  4. 如申請專利範圍第1至3項中任一項之異向導電性膜，其中，導電粒子排列區域與由異向導電性膜連接之電子零件之端子排列區域之外形對應而於異向導電性膜之長邊方向上形成有多行。
  5. 如申請專利範圍第1至4項中任一項之異向導電性膜，其中，與電子 零件之對準標記之外形對應的導電粒子排列區域於異向導電性膜之長邊方向上週期性地形成。
  6. 如申請專利範圍第1至5項中任一項之異向導電性膜，其中，作為導電粒子之排列軸，存在傾斜角不同之多種排列軸。
  7. 一種異向導電性膜，其包含絕緣接著劑層、及配置於該絕緣接著劑層之導電粒子，且於任意選擇之長度為膜之長邊方向之5~400μm、且寬度為膜寬度之區域中，存在3~3200個導電粒子，於該區域中，特定之粒子間距之導電粒子之排列軸與異向導電性膜之膜寬度方向斜交，且該排列軸於異向導電性膜之長邊方向上並列。
  8. 如申請專利範圍第7項之異向導電性膜，其中，作為導電粒子之排列軸，存在不同之傾斜角之排列軸。
  9. 一種連接構造體，其係利用申請專利範圍第1至8項中任一項之異向導電性膜將第1電子零件與第2電子零件異向導電性連接。
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