TW201711100A - Single-wafer cleaning treatment device and wafer cleaning method - Google Patents
Single-wafer cleaning treatment device and wafer cleaning method Download PDFInfo
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- 238000004140 cleaning Methods 0.000 title claims abstract description 95
- 238000000034 method Methods 0.000 title claims description 13
- 239000000126 substance Substances 0.000 claims abstract description 95
- 239000002904 solvent Substances 0.000 claims description 97
- 238000005507 spraying Methods 0.000 claims description 5
- 239000013078 crystal Substances 0.000 claims 1
- 239000007788 liquid Substances 0.000 abstract description 13
- 239000002245 particle Substances 0.000 abstract description 10
- 230000002265 prevention Effects 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 144
- 230000000694 effects Effects 0.000 description 15
- 230000002093 peripheral effect Effects 0.000 description 13
- 238000011109 contamination Methods 0.000 description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
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- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
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- 230000001681 protective effect Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 4
- 239000007921 spray Substances 0.000 description 4
- 238000005406 washing Methods 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 239000010419 fine particle Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 3
- -1 Polypropylene Polymers 0.000 description 2
- 239000003570 air Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 238000011086 high cleaning Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920001155 polypropylene Polymers 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000004696 Poly ether ether ketone Substances 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- JUPQTSLXMOCDHR-UHFFFAOYSA-N benzene-1,4-diol;bis(4-fluorophenyl)methanone Chemical compound OC1=CC=C(O)C=C1.C1=CC(F)=CC=C1C(=O)C1=CC=C(F)C=C1 JUPQTSLXMOCDHR-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
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- 238000002474 experimental method Methods 0.000 description 1
- 229920002530 polyetherether ketone Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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Abstract
Description
本發明係關於一種單片式晶圓洗淨處理裝置以及使用此單片式晶圓洗淨處理裝置的晶圓洗淨方法。The present invention relates to a monolithic wafer cleaning processing apparatus and a wafer cleaning method using the monolithic wafer cleaning processing apparatus.
作為洗淨半導體晶圓等晶圓的洗淨裝置，一種是將複數片的晶圓浸漬於充填有化學溶劑的化學溶劑槽而進行洗淨的批次（batch）方式的洗淨裝置，另一種是將單片晶圓旋轉並對此晶圓噴射化學溶劑而進行洗淨的單片方式的洗淨裝置。近年伴隨著半導體元件的細微化與晶圓的大型化，而有使用洗淨效果高的單片方式的洗淨裝置的傾向。A cleaning device for cleaning a wafer such as a semiconductor wafer is a batch cleaning device in which a plurality of wafers are immersed in a chemical solvent bath filled with a chemical solvent and washed. It is a one-piece cleaning device that rotates a single wafer and ejects a chemical solvent onto the wafer. In recent years, with the miniaturization of semiconductor elements and the increase in size of wafers, there is a tendency to use a single-chip cleaning apparatus having a high cleaning effect.
作為此種單片方式的洗淨裝置，係有如揭示於專利文獻1中之物。專利文獻1的第1圖中所記載的單片式的洗淨裝置，具備有：受旋轉驅動的旋轉體（台部）、支承晶圓的晶圓支承部、上表面為凹形狀且形成有噴射化學溶劑的噴嘴及回收化學溶劑的排液孔的噴嘴頭（噴嘴塊）、以及位於晶圓的下表面側並覆蓋台部的亂流防護蓋。As such a single-piece cleaning device, there is a material disclosed in Patent Document 1. The one-piece cleaning apparatus described in the first aspect of the patent document 1 includes a rotating body (stage) that is rotationally driven, a wafer supporting portion that supports the wafer, and a concave surface on the upper surface. A nozzle for jetting a chemical solvent, a nozzle head (nozzle block) for collecting a liquid discharge hole of the chemical solvent, and a turbulence protection cover on the lower surface side of the wafer and covering the stage.
一般在單片式晶圓洗淨處理裝置中，由於旋轉體高速的旋轉而發生亂流，致使化學溶劑飛散並附著於經洗淨的晶圓的下表面而成為污染的原因。因此，在專利文獻1中記載的單片式晶圓洗淨處理裝置中，係以抑制亂流的發生為目的而設置有亂流防護蓋。Generally, in the one-piece wafer cleaning apparatus, turbulent flow occurs due to high-speed rotation of the rotating body, causing the chemical solvent to scatter and adhere to the lower surface of the cleaned wafer to cause contamination. Therefore, in the one-piece wafer cleaning processing apparatus described in Patent Document 1, a turbulent flow protection cover is provided for the purpose of suppressing the occurrence of turbulence.
作為專利文獻1所記載的單片式晶圓洗淨處理裝置的結構上的特徵，係有以下內容：旋轉體的外周部係呈上凸形狀，於噴嘴頭的中心部係設置有用於回收自晶圓的下表面彈跳飛散出的化學溶劑的排液孔，於噴嘴頭的中央形成有大的凹部，以及來自噴嘴的化學溶劑係對晶圓下表面斜向噴射。 ［先前技術文獻］ ［專利文獻］The structure of the one-piece wafer cleaning processing apparatus described in Patent Document 1 is characterized in that the outer peripheral portion of the rotating body has an upward convex shape, and is provided at the center of the nozzle head for collection from the center of the nozzle head. The liquid discharge hole of the chemical solvent which is bounced off from the lower surface of the wafer has a large concave portion formed in the center of the nozzle head, and the chemical solvent from the nozzle is obliquely sprayed on the lower surface of the wafer. [Prior Technical Literature] [Patent Literature]
［專利文獻1］日本特開2004-119854號公報[Patent Document 1] Japanese Patent Laid-Open Publication No. 2004-119854
但是，在上述的單片式晶圓洗淨處理裝置的結構中，自噴嘴塊噴射出的化學溶劑自晶圓反彈而掉落至噴嘴塊上。雖以排液孔回收為廢液，但是為了設置此種排液孔必須要有氣液分離槽以及真空機構，因此裝置變得複雜化。However, in the configuration of the above-described monolithic wafer cleaning apparatus, the chemical solvent ejected from the nozzle block rebounds from the wafer and falls onto the nozzle block. Although the liquid discharge hole is recovered as a waste liquid, it is necessary to have a gas-liquid separation tank and a vacuum mechanism in order to provide such a liquid discharge hole, so that the apparatus becomes complicated.
另外，在上述的單片式晶圓洗淨處理裝置的結構中，台部的外周部的呈上凸形狀，一方面雖以亂流防護蓋覆蓋其上方，但另一方面在噴嘴塊的上方中，由於在亂流防護蓋設置有垂直的遮蔽部，因此在台部與亂流防護蓋之間形成了實質封閉的空間。一旦化學溶劑侵入此封閉空間，會在其內部發生溶劑滯留或引起化學溶劑的乾燥，而容易成為晶圓的污染來源。Further, in the configuration of the above-described single-wafer wafer cleaning apparatus, the outer peripheral portion of the land portion has an upward convex shape, and on the one hand, the turbulent flow protection cover covers the upper portion thereof, but on the other hand, above the nozzle block. In the middle, since the vertical flow shielding cover is provided with a vertical shielding portion, a substantially closed space is formed between the table portion and the turbulent flow protection cover. Once the chemical solvent invades the enclosed space, solvent retention or drying of the chemical solvent occurs in the interior, which easily becomes a source of contamination of the wafer.
本發明有鑑於上述問題點，目的在於提供一種單片式晶圓洗淨處理裝置，係能夠抑制因亂流的影響所導致的化學溶劑的飛沫的附著以及微粒的附著等。另外，本發明的目的在於提供一種晶圓洗淨方法，係使用此種裝置而有高的洗淨效果。In view of the above problems, an object of the present invention is to provide a monolithic wafer cleaning apparatus capable of suppressing adhesion of droplets of chemical solvents and adhesion of fine particles due to the influence of turbulent flow. Further, it is an object of the present invention to provide a wafer cleaning method which has a high cleaning effect by using such a device.
為達成上述的目的，本發明提供一種單片式晶圓洗淨處理裝置，係於旋轉該晶圓的同時藉由化學溶劑對該晶圓進行洗淨處理，該單片式晶圓洗淨處理裝置包含：一上表面之外周部為平坦的台部，得以旋轉驅動；一支承機構，立設於該台部且支承該晶圓；一上表面為平坦的噴嘴塊，配置於藉由該支承機構所支承的該晶圓之下表面側，並具有對該晶圓之下表面噴射該化學溶劑的噴嘴；以及一平板狀的亂流防護蓋，配置於受支承的該晶圓與該噴嘴塊之間，並形成有對應於設置該噴嘴塊的噴嘴的部分的開口部，且經構成為覆蓋該噴嘴塊與該台部之間的間隙。In order to achieve the above object, the present invention provides a monolithic wafer cleaning processing apparatus for cleaning a wafer by a chemical solvent while rotating the wafer, the monolithic wafer cleaning process. The device comprises: a flat portion on the outer surface of the upper surface, which is rotated and driven; a support mechanism is erected on the base portion and supports the wafer; and a nozzle block having a flat upper surface is disposed by the support a lower surface side of the wafer supported by the mechanism, and having a nozzle for spraying the chemical solvent on the lower surface of the wafer; and a flat turbulence protection cover disposed on the supported wafer and the nozzle block An opening portion corresponding to a portion of the nozzle in which the nozzle block is provided is formed and covered to cover a gap between the nozzle block and the land portion.
如此一來，噴嘴塊上表面係為平坦的，且台部的上表面的外周部也是平坦的，因此台部不具有包圍其最外周的向上凸的形狀而作為終端，所以侵入噴嘴塊的上表面與台部的上表面以及亂流防護蓋之間的化學溶劑能排出至台部的外側的空間，因此不需要在噴嘴塊設置排液孔等而能夠設為簡單的結構。因此得以提升洗淨處理裝置的維修性。另外，能防止在噴嘴塊與台部之間發生亂流，並能防止化學溶劑的飛散與微粒的附著等。In this way, the upper surface of the nozzle block is flat, and the outer peripheral portion of the upper surface of the table portion is also flat. Therefore, the table portion does not have an upward convex shape surrounding the outermost circumference thereof as a terminal end, so that it intrudes into the nozzle block. Since the chemical solvent between the surface and the upper surface of the land portion and the turbulent flow protection cover can be discharged to the space outside the table portion, it is not necessary to provide a liquid discharge hole or the like in the nozzle block, and the structure can be simplified. Therefore, the maintainability of the washing treatment device can be improved. Further, it is possible to prevent turbulent flow between the nozzle block and the stage portion, and it is possible to prevent scattering of chemical solvent and adhesion of fine particles.
較佳地，此時該亂流防護蓋的直徑係為180mm以上、該台部的直徑以下。Preferably, the diameter of the turbulence protection cover is 180 mm or more and the diameter of the table portion is equal to or less.
藉由設為此種直徑的亂流防護蓋，由於噴嘴塊除了設置有噴嘴的部分以外係被完全覆蓋，因此能防止係為固定部的噴嘴塊與係為旋轉部的台部之間所發生的亂流的影響。By providing the turbulence protection cover of such a diameter, since the nozzle block is completely covered except for the portion where the nozzle is provided, it is possible to prevent occurrence between the nozzle block which is the fixed portion and the table portion which is the rotary portion. The effects of turbulent flow.
較佳地，此時該亂流防護蓋的該開口部的直徑係為30mm以上、80mm以下。Preferably, the diameter of the opening of the turbulence protection cover is 30 mm or more and 80 mm or less.
藉由設為此種開口部的直徑，自噴嘴所噴射出的化學溶劑與亂流防護蓋不會造成干涉，並同時能更確實的進行排液。By setting the diameter of such an opening portion, the chemical solvent ejected from the nozzle does not interfere with the turbulence protection cover, and at the same time, the liquid discharge can be performed more reliably.
較佳地，此時該亂流防護蓋的下表面與該噴嘴塊的上表面之間的間隔係為0.5mm以上、10mm以下。Preferably, the interval between the lower surface of the turbulence protection cover and the upper surface of the nozzle block is 0.5 mm or more and 10 mm or less.
如果是此種亂流防護蓋的下表面與噴嘴塊的上表面之間的間隔，則能通過亂流防護蓋與噴嘴塊的間隙而確實排出化學溶劑，並且即使在亂流防護蓋的下表面與噴嘴塊的上表面之間發生溶劑滯留，也能藉由白努利的效果所致使的氣流的流動而確實的排出其溶劑滯留。If it is the interval between the lower surface of the turbulent flow protection cover and the upper surface of the nozzle block, the chemical solvent can be reliably discharged by the turbulent flow gap between the protective cover and the nozzle block, and even on the lower surface of the turbulent flow protection cover Solvent retention occurs between the upper surface of the nozzle block, and the solvent can be reliably discharged by the flow of the air current caused by the effect of the whitenuli.
較佳地，此時該亂流防護蓋的下表面與該台部的上表面之間的間隔係為0.5mm以上、10mm以下。Preferably, the interval between the lower surface of the turbulence protection cover and the upper surface of the table portion is 0.5 mm or more and 10 mm or less.
如果是此種亂流防護蓋的下表面與台部的上表面之間的間隔，能通過亂流防護蓋與台部的間隙而確實的排出化學溶劑，並且即使在亂流防護蓋的下表面與台部的上表面發生溶劑滯留，也能藉由白努利的效果所致使的氣流的流動而確實排出其溶劑滯留。If it is the interval between the lower surface of the turbulent flow protection cover and the upper surface of the table portion, the chemical solvent can be reliably discharged by the turbulent flow between the protective cover and the table portion, and even on the lower surface of the turbulent flow protection cover Solvent retention occurs on the upper surface of the table portion, and the flow of the gas stream due to the effect of the whitenuli can be surely discharged.
較佳地，此時該亂流防護蓋具有一缺口而與支承該晶圓的支承機構不接觸。Preferably, the turbulence protection cover has a notch at this time and does not contact the support mechanism supporting the wafer.
藉由此種的在亂流防護蓋上設置缺口，能更確實的防止帶至亂流防護蓋的上表面的化學溶劑撞到支承機構而變成飛沫（霧滴）。By providing a notch in the turbulent flow protection cover, it is possible to more reliably prevent the chemical solvent brought to the upper surface of the turbulent flow protection cover from hitting the support mechanism and becoming droplets (droplets).
較佳地，此時該亂流防護蓋具有藉由螺絲而將該亂流防護蓋的下表面固定於該台部的結構，而使該亂流防護蓋上表面不發生凹凸。Preferably, at this time, the turbulence protection cover has a structure in which the lower surface of the turbulence protection cover is fixed to the table portion by screws, so that the upper surface of the turbulence protection cover does not have irregularities.
藉由此種的將亂流防護蓋自下表面固定於台部的結構，由於在亂流防護蓋的上表面沒有用於固定的凹凸部，因此能提高亂流防護蓋的亂流抑制效果。According to such a structure in which the turbulent flow protection cover is fixed to the table portion from the lower surface, since the uneven portion for fixing is not provided on the upper surface of the turbulent flow protection cover, the turbulent flow suppressing effect of the turbulent flow protection cover can be improved.
另外，本發明提供一種晶圓洗淨方法，係使用上述之單片式晶圓洗淨處理裝置，其中將自該噴嘴所噴出的化學溶劑的流速設為3m/sec以下，且流量設為0.8L/min以上、2.5L/min以下而洗淨該晶圓。Further, the present invention provides a wafer cleaning method using the monolithic wafer cleaning apparatus described above, wherein a flow rate of a chemical solvent ejected from the nozzle is set to 3 m/sec or less, and a flow rate is set to 0.8. The wafer is washed at L/min or more and 2.5 L/min or less.
藉由設定為此種化學溶劑的流速與流量，能使化學溶劑分散至晶圓的下表面整體，並能防止化學溶劑不足（化學溶劑分散不到的位置）或化學溶劑滴液的發生，而能防止晶圓下表面的霧度惡化或缺陷的發生。By setting the flow rate and flow rate of such a chemical solvent, the chemical solvent can be dispersed to the entire lower surface of the wafer, and the chemical solvent shortage (the position where the chemical solvent is not dispersed) or the chemical solvent dripping can be prevented. It can prevent the deterioration of haze or the occurrence of defects on the lower surface of the wafer.
較佳地，此時在自該噴嘴所噴出的化學溶劑的流速設為V（m/sec）、化學溶劑的流量設為Q（L/min）以及該噴嘴的管徑設為D（mm）之時，該流速V、該流量Q及該管徑D的關係以V=4Q/(0.06×π×D2 )的關係式表示，並設定流量Q與管徑D而使該流速V成為在3m/sec以下的範圍內。Preferably, the flow rate of the chemical solvent ejected from the nozzle is V (m/sec), the flow rate of the chemical solvent is Q (L/min), and the diameter of the nozzle is D (mm). At this time, the relationship between the flow velocity V, the flow rate Q, and the pipe diameter D is expressed by a relational expression of V=4Q/(0.06×π×D 2 ), and the flow rate Q and the pipe diameter D are set so that the flow velocity V becomes Within the range of 3 m/sec or less.
藉由使用此種關係式，能容易設定由流速、流量、管徑所組成的洗淨條件。By using such a relationship, it is possible to easily set the washing conditions composed of the flow rate, the flow rate, and the pipe diameter.
根據本發明，能將侵入噴嘴塊的上表面與台部的上表面以及與亂流防護蓋之間的化學溶劑排出至台部的外側的空間，因此不需要在噴嘴塊設置排液孔等而能夠成為簡單的結構。因此能提升洗淨處理裝置的維修性。另外，能防止在噴嘴塊與台部之間發生亂流，並能防止化學溶劑的飛散與微粒的附著等。並且，藉由將化學溶劑的流速與流量設為適當的值，而能防止因化學溶劑不足、化學溶劑滴液以及飛沫所導致的污染或霧度的惡化等。According to the present invention, it is possible to discharge the chemical solvent between the upper surface of the intrusion nozzle block and the upper surface of the land portion and the turbulent flow protection cover to the space outside the table portion, so that it is not necessary to provide a liquid discharge hole or the like in the nozzle block. Can be a simple structure. Therefore, the maintainability of the washing treatment device can be improved. Further, it is possible to prevent turbulent flow between the nozzle block and the stage portion, and it is possible to prevent scattering of chemical solvent and adhesion of fine particles. Further, by setting the flow rate and the flow rate of the chemical solvent to an appropriate value, it is possible to prevent contamination due to chemical solvent shortage, chemical solvent dripping, and droplets, deterioration of haze, and the like.
以下，參考圖式同時詳細說明本發明的實施態樣的一例，但本發明並不限定於此。Hereinafter, an example of an embodiment of the present invention will be described in detail with reference to the drawings, but the present invention is not limited thereto.
首先參考第1圖說明本發明的單片式晶圓洗淨處理裝置。First, a one-piece wafer cleaning processing apparatus of the present invention will be described with reference to Fig. 1.
第1圖係顯示本發明的單片式晶圓洗淨處理裝置的剖面的結構的一例的概略剖面圖。第1圖所顯示的單片式晶圓洗淨處理裝置100包含：一上表面之外周部為平坦的台部11，得以旋轉驅動；一支承機構（支承銷）14，係立設於台部11且支承晶圓16；一上表面為平坦的噴嘴塊12，係配置於晶圓16之下表面側，並具有對晶圓16之下表面噴射化學溶劑的一下部噴嘴13；一平板上的亂流防護蓋15，係配置於晶圓16與噴嘴塊12之間，並形成有對應於設置噴嘴塊12的噴嘴的部分的開口部20，且經構成為覆蓋噴嘴塊12與台部11之間的間隙。台部11係藉由台部固定螺絲19而固定於旋轉部（未圖示）。並且，單片式晶圓洗淨處理裝置100也可在晶圓16的上方具備上部噴嘴18。Fig. 1 is a schematic cross-sectional view showing an example of a configuration of a cross section of a one-chip wafer cleaning apparatus of the present invention. The one-piece wafer cleaning processing apparatus 100 shown in Fig. 1 includes a table portion 11 having a flat outer peripheral portion and being rotationally driven. A support mechanism (support pin) 14 is erected on the table portion. 11 and supporting the wafer 16; a nozzle block 12 having a flat upper surface disposed on the lower surface side of the wafer 16 and having a lower nozzle 13 for spraying a chemical solvent on the lower surface of the wafer 16; The turbulence protection cover 15 is disposed between the wafer 16 and the nozzle block 12, and is formed with an opening portion 20 corresponding to a portion where the nozzle of the nozzle block 12 is disposed, and is configured to cover the nozzle block 12 and the table portion 11 The gap between them. The table portion 11 is fixed to a rotating portion (not shown) by a table fixing screw 19. Further, the monolithic wafer cleaning apparatus 100 may include an upper nozzle 18 above the wafer 16.
另外，以第2圖中的箭頭顯示自下部噴嘴13以及上部噴嘴18噴射化學溶劑至單片式晶圓洗淨處理裝置100的狀況的化學溶劑的流向。所噴射出的化學溶劑通過台部11的外側而被排出。In addition, the flow of the chemical solvent in the state in which the chemical solvent is ejected from the lower nozzle 13 and the upper nozzle 18 to the one-piece wafer cleaning apparatus 100 is shown by the arrow in FIG. The injected chemical solvent is discharged through the outside of the table portion 11.
亂流防護蓋15除了其開口部20以外，係覆蓋噴嘴塊12的上表面整體。另外，亂流防護蓋15完全覆蓋台部11與噴嘴塊12的間隙，並延伸至台部11的最外周作為終端。並且，亂流防護蓋15自其下表面側藉由亂流防護蓋固定螺絲17固定於台部11而使其上表面不產生凹凸。再者，亂流防護蓋15如後面所描述的，雖係為不與支承機構（支承銷）14接觸的形狀為較佳，但其形狀的詳細內容並未表示在係為概略剖面圖的第1圖中。後面會描述亂流防護蓋15的形狀的詳細內容。The turbulent flow protection cover 15 covers the entire upper surface of the nozzle block 12 except for the opening portion 20. Further, the turbulent flow protection cover 15 completely covers the gap between the table portion 11 and the nozzle block 12, and extends to the outermost circumference of the table portion 11 as a terminal. Further, the turbulence protection cover 15 is fixed to the table portion 11 by the turbulence protection cover fixing screw 17 from the lower surface side thereof so that the upper surface thereof does not have irregularities. Further, the turbulence protection cover 15 is preferably a shape that does not contact the support mechanism (support pin) 14 as will be described later, but the details of the shape are not shown in the schematic cross-sectional view. 1 picture. Details of the shape of the turbulent flow protection cover 15 will be described later.
噴嘴塊12的上表面係為平坦，且並無凹部或突出至亂流防護蓋15的上方的部位。因此，能使噴嘴塊12成為簡單的結構，且使裝置的維修性良好。並且能成為亂流的防止效果顯著之物。The upper surface of the nozzle block 12 is flat and has no recess or a portion that protrudes above the turbulence protection cover 15. Therefore, the nozzle block 12 can be made to have a simple structure and the maintainability of the apparatus can be improved. And it can become a significant effect of preventing turbulence.
另外，自下部噴嘴13噴出的化學溶劑係實質垂直地供給至晶圓16。如此一來，藉由實質垂直供給化學溶劑，而使化學溶劑分散至晶圓16整體，從而能防止化學溶劑滴液的發生。Further, the chemical solvent ejected from the lower nozzle 13 is supplied to the wafer 16 substantially vertically. In this way, by chemically supplying the chemical solvent substantially vertically, the chemical solvent is dispersed throughout the wafer 16, thereby preventing the occurrence of chemical solvent dripping.
較佳地，亂流防護蓋15的直徑係為180mm以上、台部11的直徑以下，為了不干涉自下部噴嘴13所噴出的化學溶劑而於亂流防護蓋15的中心部設置有開口部20。開口部20的尺寸係為直徑30mm以上、80mm以下（半徑15mm以上、40mm以下）為較佳。如果是具有此種尺寸的開口部20的亂流防護蓋15則具有足夠的排液效果。Preferably, the diameter of the turbulence protection cover 15 is 180 mm or more and the diameter of the table portion 11 is equal to or less than the diameter of the table portion 11, and the opening portion 20 is provided at the center portion of the turbulence protection cover 15 so as not to interfere with the chemical solvent ejected from the lower nozzle 13. . The size of the opening portion 20 is preferably 30 mm or more and 80 mm or less (radius 15 mm or more and 40 mm or less). If the turbulence protection cover 15 having the opening portion 20 of such a size has a sufficient liquid discharge effect.
於亂流防護蓋15與噴嘴塊12之間或是於亂流防護蓋15與台部11之間係隔開有間隔，以供化學溶劑與氣流流動、排出。亂流防護蓋15的下表面相對於噴嘴塊12的上表面係具有例如1mm的間隔。此噴嘴塊12的上表面與亂流防護蓋15的下表面的間隔希望係為0.5mm以上、10mm以下。此間隔如在0.5mm以上則能迅速排出化學溶劑，另外，如間隔在10mm以下能藉由白努利的效果產生氣流，而更有效地排出溶劑滯留。There is a space between the turbulent flow protection cover 15 and the nozzle block 12 or between the turbulence protection cover 15 and the table portion 11 for the chemical solvent and the air flow to flow and discharge. The lower surface of the turbulent flow protection cover 15 has an interval of, for example, 1 mm with respect to the upper surface of the nozzle block 12. The interval between the upper surface of the nozzle block 12 and the lower surface of the turbulence protection cover 15 is desirably 0.5 mm or more and 10 mm or less. When the interval is 0.5 mm or more, the chemical solvent can be quickly discharged. Further, if the interval is 10 mm or less, the gas flow can be generated by the effect of the cannula, and the solvent retention can be more effectively discharged.
為了氣流控制與排出化學溶劑，亂流防護蓋15與台部11的外周部係設有間隔（間隙），其最外周係呈開放狀。亂流防護蓋15的下表面相對於台部11的上表面係具有例如5mm的間隔。此台部11的上表面與亂流防護蓋15的下表面的間隔希望係為0.5mm以上、10mm以下。此間隔如在0.5mm以上則能迅速排出化學溶劑，另外，如間隔在10mm以下則能藉由白努利的效果產生氣流，而更有效地排出溶劑滯留。In order to control and discharge the chemical solvent, the turbulence protection cover 15 and the outer peripheral portion of the table portion 11 are provided with a space (gap), and the outermost periphery thereof is open. The lower surface of the turbulent flow protection cover 15 has an interval of, for example, 5 mm with respect to the upper surface of the table portion 11. The distance between the upper surface of the table portion 11 and the lower surface of the turbulence protection cover 15 is desirably 0.5 mm or more and 10 mm or less. When the interval is 0.5 mm or more, the chemical solvent can be quickly discharged. Further, if the interval is 10 mm or less, the gas flow can be generated by the effect of the cannino, and the solvent retention can be more effectively discharged.
另外，如第1圖所示，亂流防護蓋15包含藉由亂流防護蓋固定螺絲17將亂流防護蓋15的下表面固定於台部11的結構，而使亂流防護蓋15的上表面側不至於產生凹凸。由於亂流防護蓋15的上表面側沒有凹凸，可得到高的亂流防止效果。Further, as shown in Fig. 1, the turbulence protection cover 15 includes a structure in which the lower surface of the turbulence protection cover 15 is fixed to the table portion 11 by the turbulence protection cover fixing screw 17, and the turbulence protection cover 15 is placed thereon. The surface side does not cause irregularities. Since the upper surface side of the turbulent flow protection cover 15 has no irregularities, a high turbulence prevention effect can be obtained.
亂流防護蓋15能進一步具有一缺口，如此使支承該晶圓16的支承機構14不接觸於亂流防護蓋15。第3圖係為於亂流防護蓋15形成有缺口的上表面圖（第3圖（a））以及其部分擴大圖（第3圖（b））。如使亂流防護蓋15的直徑設定為大於晶圓16的直徑的狀況下，如果是這樣則支承機構（支承銷）14會接觸於亂流防護蓋15，為了避免此接觸，如第3圖（a）所示，能於亂流防護蓋15處對應支承機構的位置設置缺口30。較佳地，使缺口30的位置與支承機構14的位置相一致。The turbulent protective cover 15 can further have a notch such that the support mechanism 14 supporting the wafer 16 does not contact the turbulent protective cover 15. Fig. 3 is a top surface view (Fig. 3(a)) and a partial enlarged view (Fig. 3(b)) in which the turbulent flow protection cover 15 is formed with a notch. If the diameter of the turbulence protection cover 15 is set to be larger than the diameter of the wafer 16, if so, the support mechanism (support pin) 14 will contact the turbulence protection cover 15, in order to avoid this contact, as shown in Fig. 3. As shown in (a), the notch 30 can be provided at the position of the turbulence protection cover 15 corresponding to the support mechanism. Preferably, the position of the notch 30 is aligned with the position of the support mechanism 14.
於係為第3圖（a）所顯示的缺口部的部分擴大圖的第3圖（b）中，台部的外周部端面21與亂流防護蓋的外周部端面25在水平方向的位置係為實質一致。晶圓的外周部端面26較此為內側，並與支承機構14相接觸而支承晶圓。藉由設為此種結構，能防止帶至亂流防護蓋15的化學溶劑撞到支承機構14而變成霧滴。In the third drawing (b) of the partial enlarged view of the notch portion shown in Fig. 3(a), the outer peripheral end surface 21 of the land portion and the outer peripheral end surface 25 of the turbulence shield are horizontally positioned. For the sake of substance. The outer peripheral end surface 26 of the wafer is the inner side and is in contact with the support mechanism 14 to support the wafer. With such a configuration, it is possible to prevent the chemical solvent brought to the turbulent flow protection cover 15 from hitting the support mechanism 14 and becoming a mist.
藉由上述之單片式晶圓洗淨處理裝置100的結構，能有效的防止係為旋轉部的台部11與係為固定部的噴嘴塊12的速度差所發生的亂流的影響牽連到晶圓16。在單片式晶圓洗淨處理裝置的結構上，雖不能夠沒有固定部（噴嘴塊12），但能防止亂流對晶圓的影響。According to the configuration of the monolithic wafer cleaning apparatus 100 described above, it is possible to effectively prevent the influence of the turbulence caused by the difference in speed between the stage portion 11 which is the rotating portion and the nozzle block 12 which is the fixed portion. Wafer 16. In the configuration of the one-chip wafer cleaning apparatus, the fixed portion (nozzle block 12) cannot be eliminated, but the influence of turbulence on the wafer can be prevented.
藉由在亂流防護蓋15的下表面與台部11的上表面之間設置間隙，而藉由白努利的效果，而發生自台中心部流向外周部的氣流的流動。藉由此效果而防止在噴嘴塊11的上表面發生溶劑滯留。並且，藉由使台部11的最外周與亂流防護蓋15的最外周變成開放的系統（設為沒有遮住化學溶劑排出至外側的結構），能排放（排出）流動於亂流防護蓋15與台部11之間的化學溶劑，因此能防止因滯留的化學溶劑的乾燥所導致的晶圓的污染。By providing a gap between the lower surface of the turbulent flow protection cover 15 and the upper surface of the table portion 11, the flow of the airflow flowing from the center portion to the outer peripheral portion occurs by the effect of the white nucleus. By this effect, solvent retention on the upper surface of the nozzle block 11 is prevented. Further, by making the outermost circumference of the table portion 11 and the outermost circumference of the turbulence protection cover 15 open (a configuration in which the chemical solvent is not blocked from being discharged to the outside), the flow can be discharged (discharged) to the turbulent flow protection cover. The chemical solvent between the portion 15 and the stage portion 11 can prevent contamination of the wafer due to drying of the retained chemical solvent.
另外，如上所述噴嘴塊12的上表面係為平坦，噴嘴塊12成為不突出於亂流防護蓋15之上的結構。由於固定部與旋轉部的存在因此使亂流相對於旋轉軸加大發生於垂直方向，藉由使噴嘴13的上表面（ノズルブロック１ ２ の上面と略一致）位於較亂流防護蓋15的下表面更為下方，能更有效的抑制亂流的發生。Further, as described above, the upper surface of the nozzle block 12 is flat, and the nozzle block 12 is configured to not protrude above the turbulence protection cover 15. Due to the presence of the fixed portion and the rotating portion, the turbulent flow is increased in the vertical direction with respect to the rotation axis, and the upper surface of the nozzle 13 (the upper surface of the nozzle 13 is slightly aligned) is located in the turbulent flow protection cover 15 The lower surface is lower, which can more effectively suppress the occurrence of turbulence.
並且，在此亂流防護蓋15中，並不存在如專利文獻1的第1圖所記載的設置為垂直於亂流防護蓋的遮蔽部。因此，並不會發生因遮蔽部與噴嘴塊的速度差所導致的亂流。Further, in the turbulence protection cover 15, there is no shielding portion provided to be perpendicular to the turbulence protection cover as described in the first drawing of Patent Document 1. Therefore, turbulent flow due to the difference in speed between the shielding portion and the nozzle block does not occur.
至此，雖參考第1圖以及第3圖而說明了具備較晶圓16的直徑為大的直徑的亂流防護蓋的單片式晶圓洗淨處理裝置100，即使亂流防護蓋其直徑係為小於晶圓的直徑，也能得到同樣的效果。第4圖係顯示根據本發明的其他型態的單片式晶圓洗淨處理裝置200的剖面的結構的概略圖。在單片式晶圓洗淨處理裝置200中，亂流防護蓋35的直徑在小於晶圓16的直徑的這一點中係與單片式晶圓洗淨處理裝置100相異。但是，亂流防護蓋35也具有完全覆蓋台部11與噴嘴塊12的間隙的直徑。Thus far, the single-wafer wafer cleaning apparatus 100 including the turbulence protection cover having a larger diameter than the wafer 16 has been described with reference to FIGS. 1 and 3, even if the turbulence protection cover has a diameter system. The same effect can be obtained for a diameter smaller than the wafer. Fig. 4 is a schematic view showing the configuration of a cross section of a monolithic wafer cleaning apparatus 200 according to another embodiment of the present invention. In the one-piece wafer cleaning processing apparatus 200, the diameter of the turbulence protection cover 35 is different from the one-piece wafer cleaning processing apparatus 100 in that it is smaller than the diameter of the wafer 16. However, the turbulent flow protection cover 35 also has a diameter that completely covers the gap between the table portion 11 and the nozzle block 12.
如此，藉由使亂流防護蓋35的直徑小於晶圓16的直徑，就沒必要在亂流防護蓋設置缺口，而能使亂流防護蓋的結構簡單。Thus, by making the diameter of the turbulent flow protection cover 35 smaller than the diameter of the wafer 16, it is not necessary to provide a gap in the turbulent flow protection cover, and the structure of the turbulence protection cover can be simplified.
經由以上的內容而說明了本發明的單片式晶圓洗淨處理裝置。以下的內容係說明使用本發明之單片式晶圓洗淨處理裝置的晶圓洗淨方法。The monolithic wafer cleaning processing apparatus of the present invention has been described above. The following is a description of a wafer cleaning method using the one-chip wafer cleaning apparatus of the present invention.
在本發明中，將自下部噴嘴13所噴出的化學溶劑的流速設為3m/sec以下，且流量設為0.8L/min以上、2.5L/min以下而洗淨晶圓16。這樣做的理由是基於以下般的實驗所得到的資料。In the present invention, the flow rate of the chemical solvent ejected from the lower nozzle 13 is set to 3 m/sec or less, and the flow rate is set to 0.8 L/min or more and 2.5 L/min or less to wash the wafer 16. The reason for this is based on the information obtained from the following experiments.
（實驗例） 使用顯示於第1圖的單片式晶圓洗淨處理裝置100，自下部噴嘴13噴射化學溶劑而進行晶圓16的下表面（內表面）的洗淨。晶圓洗淨的流程為，最初以晶圓的旋轉數1000rpm噴射濃度20ppm的臭氧水60秒，其次噴射0.5%的稀氫氟酸（dilute hydrofluoric acid; DHF）60秒，並且以旋轉數1000rpm噴射濃度20ppm的臭氧水60秒，最後噴射空氣同時旋轉晶圓進行乾燥。(Experimental Example) Using the one-piece wafer cleaning apparatus 100 shown in Fig. 1, a chemical solvent is ejected from the lower nozzle 13 to wash the lower surface (inner surface) of the wafer 16. The wafer cleaning process is to initially spray 20 ppm of ozone water at a rotation speed of 1000 rpm of the wafer for 60 seconds, and then spray 0.5% of dilute hydrofluoric acid (DHF) for 60 seconds, and spray at a number of revolutions of 1000 rpm. The ozone water was concentrated at 20 ppm for 60 seconds, and finally the air was sprayed while rotating the wafer for drying.
而後，在噴射化學溶劑之時，改變化學溶劑的流量Q（L/min）、化學溶劑的流速V（m/sec）以及下部噴嘴13的管徑D（mm），並對晶圓16的洗淨面（內表面）的化學溶劑的擴散狀況、以及因霧度粗化與飛沫（霧滴）所導致的污染的有無進行評價。在霧度粗化與霧滴所導致的污染的評價中，所使用的是KLA-Tencor公司製造的晶圓檢查裝置SP3。Then, when the chemical solvent is sprayed, the flow rate Q (L/min) of the chemical solvent, the flow rate V (m/sec) of the chemical solvent, and the tube diameter D (mm) of the lower nozzle 13 are changed, and the wafer 16 is washed. The diffusion state of the chemical solvent on the clean surface (inner surface) and the presence or absence of contamination due to coarsening of the haze and droplets (fog) were evaluated. In the evaluation of the haze roughening and the contamination caused by the mist, the wafer inspection apparatus SP3 manufactured by KLA-Tencor Co., Ltd. was used.
這裡，在本發明的單片式晶圓洗淨處理裝置之中，流量Q、流速V以及管徑D的關係用以下的數學式（1）進行表示。π係為圓周率。 【數學式1】 V=4Q/(0.06×π×D2 )Here, in the one-piece wafer cleaning processing apparatus of the present invention, the relationship between the flow rate Q, the flow velocity V, and the pipe diameter D is expressed by the following mathematical expression (1). The π system is a pi. [Math 1] V=4Q/(0.06×π×D 2 )
首先，將下部噴嘴13的管徑設為4mm，而將改變化學溶劑的流量Q的狀況的晶圓內表面的化學溶劑的擴散狀況的評價結果顯示於表1。 【表1】 First, the evaluation results of the diffusion state of the chemical solvent on the inner surface of the wafer in which the diameter of the lower nozzle 13 is 4 mm and the flow rate Q of the chemical solvent are changed are shown in Table 1. 【Table 1】
如表1中所示，化學溶劑的流量在0.8L/min以上、2.5L/min以下中，晶圓內表面的化學溶劑的擴散狀況為良好。相對於此，化學溶劑的流量在0.6L/min以下時，發生化學溶劑不足（化學溶劑分散不到的位置），另外，在3.0L/min以上中發生了化學溶劑滴液。As shown in Table 1, the flow rate of the chemical solvent was 0.8 L/min or more and 2.5 L/min or less, and the diffusion state of the chemical solvent on the inner surface of the wafer was good. On the other hand, when the flow rate of the chemical solvent is 0.6 L/min or less, the chemical solvent is insufficient (the position where the chemical solvent is not dispersed), and the chemical solvent is dropped at 3.0 L/min or more.
接下來，將下部噴嘴13的管徑設為4mm，而將改變化學溶劑的流速V的狀況的晶圓內表面的霧度粗化與霧滴所導致的污染的評價結果顯示於表2。 【表2】 Next, the tube diameter of the lower nozzle 13 was set to 4 mm, and the evaluation results of the haze coarsening of the inner surface of the wafer and the contamination by the mist were changed in the state of changing the flow rate V of the chemical solvent in Table 2. 【Table 2】
如表2所顯示，如化學溶劑的流速在3.0m/sec以下，則晶圓內表面並無發生霧度粗化與霧滴所導致的污染。相對於此，如化學溶劑的流速變成在3.3m/sec以上，則因化學溶劑對於晶圓16的碰觸太強，而有觀察到霧度粗化與霧滴雙方所導致的污染。As shown in Table 2, if the flow rate of the chemical solvent is 3.0 m/sec or less, there is no haze coarsening and contamination due to the mist on the inner surface of the wafer. On the other hand, when the flow rate of the chemical solvent is 3.3 m/sec or more, the contact of the chemical solvent with respect to the wafer 16 is too strong, and contamination due to both haze coarsening and fogging is observed.
如上所述，如化學溶劑的流量是以0.8L/min以上、2.5L/min以下，且，化學溶劑的流速為3.0m/sec以下，化學溶劑對於晶圓內表面的分散狀況係為良好，且在晶圓內表面不會發生由霧度粗化與霧滴所導致的污染，因此能實施良好的洗淨。As described above, if the flow rate of the chemical solvent is 0.8 L/min or more and 2.5 L/min or less, and the flow rate of the chemical solvent is 3.0 m/sec or less, the dispersion of the chemical solvent on the inner surface of the wafer is good. Moreover, contamination by fogging and fogging does not occur on the inner surface of the wafer, so that good cleaning can be performed.
另外，自噴嘴吐出的化學溶劑的流速設為V（m/sec）、化學溶劑的流量設為Q（L/min）以及該噴嘴的管徑設為D（mm）之關係，係以上述的數學式（1）表示，能使用此數學式設定流量Q與管徑D而使流速V成為在3m/sec以下範圍內。也同樣能使用數學式（1）設定流速V與管徑D而使化學溶劑的流量成為在0.8L/min以上、2.5L/min以下的範圍內。 ［實施例］Further, the relationship between the flow rate of the chemical solvent discharged from the nozzle is V (m/sec), the flow rate of the chemical solvent is Q (L/min), and the diameter of the nozzle is D (mm). The mathematical formula (1) indicates that the flow rate Q and the pipe diameter D can be set using this mathematical formula such that the flow velocity V is within a range of 3 m/sec or less. Similarly, the flow rate V and the pipe diameter D can be set using the mathematical formula (1) so that the flow rate of the chemical solvent is in the range of 0.8 L/min or more and 2.5 L/min or less. [Examples]
以下，顯示實施例及比較例而更為具體地說明本發明，但本發明並未被限定於此。Hereinafter, the present invention will be more specifically described by showing examples and comparative examples, but the present invention is not limited thereto.
首先，以下係顯示關於本發明的單片式晶圓洗淨處理裝置的實施例及比較例。First, the following shows examples and comparative examples of the one-chip wafer cleaning apparatus of the present invention.
＜實施例1＞ 準備好與顯示於第1圖的單片式晶圓洗淨處理裝置100具有相同結構的裝置。此裝置為了同時進行晶圓16的表面側與內表面側的洗淨，分別在晶圓上方與下方具有洗淨噴嘴。下方的噴嘴（下部噴嘴13）在噴嘴塊12的內部，在噴嘴塊12開設有管徑4mm的孔（噴嘴的管徑4mm）。上方的噴嘴（上部噴嘴18）中所使用的是管徑4mm的PFA（四氟乙烯）軟管。另外，上部噴嘴及下部噴嘴也同樣有四根管，此些是成為純水、臭氧水、氟酸、空壓的四個系統。<Example 1> An apparatus having the same configuration as that of the one-chip wafer cleaning apparatus 100 shown in Fig. 1 was prepared. In order to simultaneously clean the surface side and the inner surface side of the wafer 16, the apparatus has cleaning nozzles above and below the wafer. The lower nozzle (lower nozzle 13) is inside the nozzle block 12, and a hole having a diameter of 4 mm (a diameter of the nozzle of 4 mm) is opened in the nozzle block 12. A PFA (tetrafluoroethylene) hose having a diameter of 4 mm was used in the upper nozzle (upper nozzle 18). In addition, the upper nozzle and the lower nozzle also have four tubes, and these are four systems that are pure water, ozone water, hydrofluoric acid, and air pressure.
在此，上部噴嘴18與晶圓16之間的間隔設為30mm。下部噴嘴13與晶圓16之間的間隔設為50mm。台部11與晶圓16的間隔可藉由支承銷的長度來調整，本實施例中係設定為50mm。Here, the interval between the upper nozzle 18 and the wafer 16 is set to 30 mm. The interval between the lower nozzle 13 and the wafer 16 is set to 50 mm. The interval between the stage portion 11 and the wafer 16 can be adjusted by the length of the support pin, which is set to 50 mm in this embodiment.
關於各部位的材質，亂流防護蓋15為PP（Polypropylene，聚丙烯），台部11為聚氯乙烯或四氟乙烯系，噴嘴塊12為四氟乙烯系，支承機構（支承銷）14係於超硬合金以DLC(Diamond-like Carbon，類金剛石碳)覆膜，晶圓之間的接觸部則是設為使用PEEK之物。Regarding the material of each part, the turbulence protective cover 15 is PP (Polypropylene, polypropylene), the table portion 11 is made of polyvinyl chloride or tetrafluoroethylene, the nozzle block 12 is made of tetrafluoroethylene, and the support mechanism (support pin) is 14 The superhard alloy is coated with DLC (Diamond-like Carbon), and the contact between the wafers is set to use PEEK.
台部11立設有五根的支承銷，其中的一根為可活動的，而將晶圓16夾住。另外，為了支承晶圓16，支承銷係設置為使晶圓16相對於台部中心偏心1.0mm。偏心的方向為自可活動的支承銷向台部11的中心的方向。第1圖的支承銷14中，亦可以有可動式的支承銷與固定式的支承銷這兩種。第5圖係顯示立設有此些支承銷（可動）22與支承銷（固定）23的台部11的上視圖。The table portion 11 is provided with five support pins, one of which is movable, and the wafer 16 is clamped. Further, in order to support the wafer 16, the support pin is disposed such that the wafer 16 is eccentric with respect to the center of the land portion by 1.0 mm. The direction of the eccentricity is the direction from the movable support pin to the center of the table portion 11. The support pin 14 of Fig. 1 may have either a movable support pin or a fixed support pin. Fig. 5 is a top view showing the table portion 11 on which the support pins (movable) 22 and the support pins (fixed) 23 are erected.
使用下部噴嘴的管徑為4mm的上述的單片式晶圓洗淨處理裝置，而進行直徑300mm的雙面拋光矽晶圓的洗淨。晶圓內表面的洗淨流程為，最初以晶圓的旋轉數1000rpm噴射濃度20ppm的臭氧水60秒，接下來噴射0.5%的稀氫氟酸60秒，並且以旋轉數1000rpm噴射濃度20ppm的臭氧水60秒，最後噴射空氣同時旋轉晶圓而進行乾燥。此時的化學溶劑的流量皆設為1.5L/min，且化學溶劑的流速皆設為2.0m/sec。The above-described one-piece wafer cleaning apparatus having a diameter of 4 mm of the lower nozzle was used to clean the double-sided polished wafer having a diameter of 300 mm. The cleaning process of the inner surface of the wafer is such that ozone water having a concentration of 20 ppm is initially sprayed at a number of revolutions of 1000 rpm for 60 seconds, followed by spraying 0.5% of dilute hydrofluoric acid for 60 seconds, and spraying ozone at a concentration of 20 rpm at a rotation of 1000 rpm. The water was allowed to cool for 60 seconds, and finally the air was sprayed while rotating the wafer. The flow rate of the chemical solvent at this time was set to 1.5 L/min, and the flow rate of the chemical solvent was set to 2.0 m/sec.
而後以KLA-Tencor公司製造的晶圓檢查裝置SP3對洗淨後的矽晶圓的內表面（下表面）進行了評價。Then, the inner surface (lower surface) of the cleaned silicon wafer was evaluated by a wafer inspection apparatus SP3 manufactured by KLA-Tencor.
此時的微粒分布圖係顯示於第6圖。所檢測出的晶圓表面內的缺陷的個數為85個。第6圖的微粒分布圖中，並未發現因霧滴的影響所產生的浮水印的密集或亂流的影響所導致的化學溶劑的飛散痕跡。The particle distribution map at this time is shown in Fig. 6. The number of defects in the surface of the wafer detected was 85. In the particle distribution map of Fig. 6, the scattering of chemical solvents caused by the influence of the dense or turbulent flow of the watermark caused by the influence of the droplets was not found.
＜實施例2＞ 準備好與顯示於第4圖的單片式晶圓洗淨處理裝置200具有相同結構的裝置。如同已說明的，單片式晶圓洗淨處理裝置200的結構除了亂流防護蓋的直徑小於晶圓的直徑這一點以外，其餘與實施例1的單片式晶圓洗淨處理裝置100係為相同的結構。下部噴嘴的管徑同樣設為4mm。並且，以與實施例1相同的洗淨條件洗淨矽晶圓，並以相同的檢查裝置及檢查條件評價洗淨後的矽晶圓的內表面。<Example 2> An apparatus having the same configuration as that of the one-chip wafer cleaning apparatus 200 shown in Fig. 4 was prepared. As described above, the configuration of the one-chip wafer cleaning apparatus 200 is the same as that of the one-piece wafer cleaning apparatus 100 of the first embodiment except that the diameter of the turbulent flow protection cover is smaller than the diameter of the wafer. For the same structure. The diameter of the lower nozzle is also set to 4 mm. Then, the silicon wafer was washed under the same cleaning conditions as in Example 1, and the inner surface of the cleaned silicon wafer was evaluated under the same inspection apparatus and inspection conditions.
此時的微粒分布圖係顯示於第7圖。所檢測出的晶圓表面內的缺陷的個數為88個。第7圖的微粒分布圖中，並未發現因霧滴的影響所產生的浮水印的密集或亂流的影響所導致的化學溶劑的飛散痕跡。The particle distribution map at this time is shown in Fig. 7. The number of defects in the surface of the wafer detected was 88. In the particle distribution map of Fig. 7, the scattering of the chemical solvent caused by the influence of the dense or turbulent flow of the watermark caused by the influence of the droplets was not found.
將實施例1、2的洗淨後的缺陷的個數、亂流的影響及霧滴的影響與後面描述的比較例1的結果一起彙整顯示於表3。The number of defects after washing in Examples 1 and 2, the influence of turbulent flow, and the influence of the mist were collectively shown in Table 3 together with the results of Comparative Example 1 described later.
【表2】 【Table 2】
＜比較例1＞ 第8圖係顯示習知的單片式晶圓洗淨處理裝置的剖面結構的一例的概略圖。第8圖的單片式晶圓洗淨處理裝置400中，主要是在噴嘴塊42自台部41向上方突出的這一點以及未設置亂流防護蓋的這一點與實施例1的單片式晶圓洗淨處理裝置100及實施例2的單片式晶圓洗淨處理裝置200不同。單片式晶圓洗淨處理裝置400包含：於外周部具有一上凸部的一台部41、支承晶圓16的一支承機構（支承銷）44、配置於晶圓的下表面側的一噴嘴塊42，該噴嘴塊42係具有對晶圓的下表面噴射化學溶劑的下部噴嘴43。噴嘴塊42中包含四個系統（純水、臭氧水、氟酸、空壓）的噴嘴。晶圓的上方設置有上部噴嘴48。下部噴嘴43的管徑設為4mm。<Comparative Example 1> Fig. 8 is a schematic view showing an example of a cross-sectional structure of a conventional one-piece wafer cleaning processing apparatus. The one-piece wafer cleaning processing apparatus 400 of Fig. 8 mainly focuses on the point that the nozzle block 42 protrudes upward from the table portion 41 and that the turbulence protection cover is not provided, and the one-piece type of the first embodiment. The wafer cleaning processing apparatus 100 is different from the one-chip wafer cleaning processing apparatus 200 of the second embodiment. The one-piece wafer cleaning apparatus 400 includes a single portion 41 having an upper convex portion on the outer peripheral portion, a support mechanism (support pin) 44 for supporting the wafer 16, and a lower surface side disposed on the wafer. A nozzle block 42 having a lower nozzle 43 that sprays a chemical solvent onto the lower surface of the wafer. The nozzle block 42 contains nozzles of four systems (pure water, ozone water, hydrofluoric acid, air pressure). An upper nozzle 48 is disposed above the wafer. The diameter of the lower nozzle 43 is set to 4 mm.
使用單片式晶圓洗淨處理裝置400以與實施例1相同的洗淨條件洗淨矽晶圓，並以相同的檢查裝置及檢查條件評價洗淨後的矽晶圓的內表面。The wafer was cleaned using the single-wafer wafer cleaning apparatus 400 under the same cleaning conditions as in Example 1, and the inner surface of the cleaned wafer was evaluated under the same inspection apparatus and inspection conditions.
此時的微粒分布圖係顯示於第9圖。所檢測出的晶圓表面內的洗淨後的缺陷的個數為406個。第9圖的微粒分布圖中，發現有因霧滴的附著以及亂流的影響所導致的化學溶劑供給時的化學溶劑飛散痕跡。於表3顯示此些的評價結果。The particle distribution map at this time is shown in Fig. 9. The number of detected defects in the surface of the wafer after the detection was 406. In the particle distribution map of Fig. 9, it was found that the chemical solvent was scattered during the supply of the chemical solvent due to the adhesion of the droplets and the influence of the turbulent flow. The evaluation results of these are shown in Table 3.
如第6圖、第7圖以及第9圖所示，實施例1及實施例2中並未發現有於比較例1中所發生的霧滴的影響所引起的浮水印的密集或亂流的影響所導致的化學溶劑的飛散痕跡。藉此使缺陷數量大幅的減少。As shown in Fig. 6, Fig. 7, and Fig. 9, in Example 1 and Example 2, the dense or turbulent flow of the watermark caused by the influence of the mist generated in Comparative Example 1 was not found. Affect the resulting scattering of chemical solvents. Thereby the number of defects is greatly reduced.
如同以上所說明的，藉由使用本發明的單片式晶圓洗淨處理裝置洗淨晶圓的下表面而能大幅的減少因亂流或霧滴所導致的晶圓下表面的缺陷的個數。另外，藉由使用本發明的單片式晶圓洗淨處理裝置的晶圓的洗淨方法也能防止晶圓內表面的霧度粗化的發生。As described above, by using the one-piece wafer cleaning processing apparatus of the present invention to clean the lower surface of the wafer, the defects of the lower surface of the wafer due to turbulent flow or mist can be greatly reduced. number. Further, by using the wafer cleaning method of the one-chip wafer cleaning apparatus of the present invention, it is possible to prevent the occurrence of haze coarsening on the inner surface of the wafer.
此外，本發明並未被限定於上述實施例，上述實施例為例示，凡具有與本發明的申請專利範圍所記載的技術思想實質上相同的構成，能得到同樣的作用效果者，皆被包含在本發明的技術範圍內。Further, the present invention is not limited to the above-described embodiments, and the above-described embodiments are exemplified, and those having substantially the same technical concept as those described in the patent application scope of the present invention can be obtained by the same effects. It is within the technical scope of the present invention.
100、200、400‧‧‧單片式晶圓洗淨處理裝置
11、41‧‧‧台部
12、42‧‧‧噴嘴塊
13、43‧‧‧下部噴嘴
14、44‧‧‧支承機構
15‧‧‧亂流防護蓋
16‧‧‧晶圓
17‧‧‧亂流防護蓋固定螺絲
18、48‧‧‧上部噴嘴
19‧‧‧台部固定螺絲
20‧‧‧開口部
21‧‧‧台部的外周部端面
22‧‧‧支承銷
23‧‧‧支承銷
25‧‧‧亂流防護蓋的外周部端面
26‧‧‧晶圓的外周部端面
30‧‧‧缺口
35‧‧‧亂流防護蓋100, 200, 400‧‧‧one wafer wafer cleaning device
11, 41‧‧
12. 42‧‧‧Nozzle block
13, 43‧‧‧ lower nozzle
14, 44‧‧‧Support institutions
15‧‧‧Rand of flow protection cover
16‧‧‧ Wafer
17‧‧‧Rid flow protection cover fixing screws
18, 48‧‧‧ upper nozzle
19‧‧‧Taiwan fixing screws
20‧‧‧ openings
21‧‧‧The outer peripheral end of the Taiwan Department
22‧‧‧Support pin
23‧‧‧Support pin
25‧‧‧Outer peripheral end face of turbulent flow protection cover
26‧‧‧The peripheral end face of the wafer
30‧‧‧ gap
35‧‧‧Rand of flow protection cover
［第1圖］係顯示本發明的單片式晶圓洗淨處理裝置的剖面的結構的一例的概略剖面圖。 ［第2圖］係顯示自噴嘴所噴射出的化學溶劑的流向的概略圖。 ［第3圖］係顯示於亂流防護蓋形成的缺口的（a）上視圖以及（b）部分擴大圖。 ［第4圖］係顯示本發明的其他的單片式晶圓洗淨處理裝置的剖面的結構的概略剖面圖。 ［第5圖］係顯示第1實施例中所使用的單片式晶圓洗淨處理裝置的台部的上視圖。 ［第6圖］係為藉由實施例1的晶圓的微粒分布圖。 ［第7圖］係為藉由實施例2的晶圓的微粒分布圖。 ［第8圖］係顯示習知的單片式晶圓洗淨處理裝置的剖面的結構的一例的概略剖面圖。 ［第9圖］係為藉由比較例1的晶圓的微粒分布圖。[Fig. 1] is a schematic cross-sectional view showing an example of a configuration of a cross section of a one-chip wafer cleaning apparatus of the present invention. [Fig. 2] is a schematic view showing the flow of chemical solvent ejected from a nozzle. [Fig. 3] is a top view (a) showing a notch formed by the turbulent flow protection cover, and (b) a partially enlarged view. [Fig. 4] is a schematic cross-sectional view showing a configuration of a cross section of another single-wafer wafer cleaning processing apparatus of the present invention. [Fig. 5] A top view showing a table portion of the one-chip wafer cleaning processing apparatus used in the first embodiment. [Fig. 6] is a particle distribution diagram of the wafer by the first embodiment. [Fig. 7] is a particle distribution diagram of the wafer by the second embodiment. [Fig. 8] is a schematic cross-sectional view showing an example of a configuration of a cross section of a conventional one-chip wafer cleaning apparatus. [Fig. 9] is a particle distribution diagram of the wafer by Comparative Example 1.
100‧‧‧單片式晶圓洗淨處理裝置 100‧‧‧Single wafer wafer cleaning device
11‧‧‧台部 11‧‧‧Department
12‧‧‧噴嘴塊 12‧‧‧Nozzle block
13‧‧‧噴嘴 13‧‧‧Nozzles
14‧‧‧支承機構 14‧‧‧Support mechanism
15‧‧‧亂流防護蓋 15‧‧‧Rand of flow protection cover
16‧‧‧晶圓 16‧‧‧ Wafer
17‧‧‧亂流防護蓋固定螺絲 17‧‧‧Rid flow protection cover fixing screws
18‧‧‧上部噴嘴 18‧‧‧ upper nozzle
19‧‧‧台部固定螺絲 19‧‧‧Taiwan fixing screws
20‧‧‧開口部 20‧‧‧ openings
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| JP6482402B2 (en) | 2019-03-13 |
| WO2016203680A1 (en) | 2016-12-22 |
| JP2017011062A (en) | 2017-01-12 |
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