CN112676226A - Wafer cleaning device - Google Patents

Wafer cleaning device Download PDF

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Publication number
CN112676226A
CN112676226A CN201910989773.XA CN201910989773A CN112676226A CN 112676226 A CN112676226 A CN 112676226A CN 201910989773 A CN201910989773 A CN 201910989773A CN 112676226 A CN112676226 A CN 112676226A
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CN
China
Prior art keywords
wafer
blocking member
assembly
cleaning
rotating
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Pending
Application number
CN201910989773.XA
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Chinese (zh)
Inventor
朴英植
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xia Tai Xin Semiconductor Qing Dao Ltd
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Xia Tai Xin Semiconductor Qing Dao Ltd
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Filing date
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Priority to CN201910989773.XA priority Critical patent/CN112676226A/en
Publication of CN112676226A publication Critical patent/CN112676226A/en
Pending legal-status Critical Current

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Abstract

The invention discloses a wafer cleaning device, which comprises: a rotation chamber; the rotating assembly is arranged in the rotating chamber and comprises a rotating table, and a sucking disc is arranged on the rotating table and used for sucking a wafer so as to enable the wafer to rotate along with the rotation of the rotating table; the electrostatic sensor is used for sensing whether electrostatic charges exist on the wafer or not; the soft X-ray ionizer is arranged above the wafer, and when the electrostatic sensor senses that electrostatic charges exist on the wafer, soft X-rays are irradiated on the wafer to ionize air in the rotating chamber so as to eliminate the electrostatic charges on the wafer. By the method, static electricity generated on the wafer can be effectively eliminated.

Description

Wafer cleaning device
Technical Field
The invention relates to a wafer cleaning device.
Background
During the cleaning process of the wafer, static electricity is generated due to friction when a Spin Chuck (Spin Chuck) rotates or a fluid in a Teflon (Teflon) pipe flows when a Spin chamber of a cleaning apparatus is processed, but the static electricity covers particles on the surface of the wafer, and an arc failure is likely to occur during the patterning process of the wafer, thereby decreasing the yield of the wafer.
At present, static electricity is usually eliminated by mounting a carbon wafer chuck on a rotating chuck and grounding the chuck, and spraying carbon dioxide fluid on the wafer by using a spraying technique before processing, but the problems are not solved in practical application.
Disclosure of Invention
In view of the above, it is desirable to provide a wafer cleaning apparatus capable of eliminating static electricity generated from a wafer.
A wafer cleaning apparatus, comprising: a rotation chamber; the rotating assembly is arranged in the rotating chamber and comprises a rotating table, and a sucking disc is arranged on the rotating table and used for sucking a wafer so as to enable the wafer to rotate along with the rotation of the rotating table; the electrostatic sensor is used for sensing whether electrostatic charges exist on the wafer or not; the soft X-ray ionizer is arranged above the wafer, and when the electrostatic sensor senses that electrostatic charges exist on the wafer, soft X-rays are irradiated on the wafer to ionize air in the rotating chamber so as to eliminate the electrostatic charges on the wafer.
Compared with the prior art, in the wafer cleaning device provided by the invention, if the electrostatic sensor senses that the electrostatic charge exists on the wafer, the soft X-ray ionizer is started to irradiate the wafer with the soft X-ray so as to ionize the air in the rotating chamber and further eliminate the electrostatic charge on the wafer, and when the electrostatic sensor does not sense that the electrostatic charge exists on the wafer, the soft X-ray ionizer is not required to be started. Therefore, the soft X-ray ionizer can be started only when electrostatic charges exist on the wafer, so that excessive damage to a human body is prevented, the electrostatic charges on the wafer can be monitored in real time and eliminated in time, the quality of the wafer is guaranteed, and the yield of the wafer is improved. Furthermore, because the soft X-rays emitted by the soft X-ray ionizer have controllable light emitting range and light emitting total amount, the soft X-rays can be effectively controlled to be fully irradiated, and compared with the traditional mode of spraying carbon dioxide fluid and manufacturing a wafer clamp by using carbon materials, the purpose of effectively eliminating electrostatic charges can be achieved.
Drawings
Fig. 1 is a front view of a wafer cleaning apparatus according to a first embodiment of the present invention;
FIG. 2 is a perspective view of a wafer cleaning apparatus according to a second embodiment of the present invention;
fig. 3 is a cross-sectional view of the wafer cleaning apparatus shown in fig. 2.
Description of the main elements
Wafer cleaning apparatus 100, 300
Wafer 200
Rotary chamber 10
Rotating assembly 20
Rotating table 21
Drive assembly 22
Electrostatic sensor 30
Soft X-ray ionizer 40
Nozzle 51
Cleaning solution recovery assembly 60, 70
First stoppers 61, 71
Second blocking member 62, 72
Third stoppers 63 and 73
First side wall 611
First blocking wall 612
Second side wall 621
Second baffle 622
Third side wall 631
Third blocking wall 632
Cover plate 633
Support base 71
Cleaning solution collection assembly 72
Bottom plate 721
Inner side plate 722
Outer plate 723
First partition 724
Top plate 725
Connecting part 7250
First end 7251
Second end 7252
Collecting groove 726
Discharge port 727
Fixed component 728
First top wall 731
First side wall 732
First bottom wall 733
Second side wall 741
Second bottom wall 742
First baffle 743
Third side wall 751
Third bottom wall 752
Second partition 753
Second guard 754
Third outflow port 755
Detailed Description
Referring to fig. 1, a wafer cleaning apparatus 100 according to a first embodiment of the present invention can eliminate static electricity generated during a cleaning process of a wafer 200. The wafer cleaning apparatus 100 includes a spin chamber 10, a spin module 20, an electrostatic sensor 30, a soft X-ray ionizer 40, a cleaning solution supply module (not shown), and a cleaning solution recovery module 60, wherein the spin module 20, the electrostatic sensor 30, the soft X-ray ionizer 40, and the cleaning solution recovery module 60 are all disposed in the spin chamber 10.
The rotation unit 20 includes a rotation table 21 and a driving unit 22, and the rotation table 21 is disposed on the driving unit 22 and rotates under the driving action of the driving unit 22. The rotary stage 21 is used for carrying the wafer 200. Further, the turntable 21 is provided with a suction cup (not shown) for sucking the wafer 200 to rotate the wafer 200 with the turntable 21. The suction pad communicates with a suction device, not shown, so that the wafer 200 is held by the suction pad by a negative pressure generated by the suction device and is further rotated by the turntable 21. It will be appreciated that the suction cup may be made of a porous material.
The driving assembly 22 includes a driving member (not shown) for providing a driving force, and a driving shaft (not shown), for example, the driving member may be an electric motor. The driving shaft is disposed in the driving member and is fixedly connected to the rotating table 21, so as to drive the rotating table 21 to rotate under the driving action of the driving member.
The electrostatic sensor 30 is disposed above the wafer 200 for sensing whether there is an electrostatic charge on the wafer 200. In the present embodiment, the electrostatic sensor 30 is disposed above the wafer 200. It is understood that the electrostatic sensor 30 has a sensing range, and the electrostatic sensor 30 can sense whether there is static electricity on the wafer 200 only by being disposed in the sensing range, so the position thereof is not limited.
The soft X-ray ionizer 40 is disposed above the wafer 200, and irradiates the wafer 200 with soft X-rays to ionize the air in the spin chamber 10 and remove the electrostatic charges on the wafer 200 when the electrostatic sensor 30 senses the electrostatic charges on the wafer 200.
It will be appreciated that the soft X-ray ionizer 40 has a fixed range of action, so that static electricity can be eliminated by simply adjusting the angle of the soft X-ray ionizer 40 to the desired irradiation range. In the present embodiment, the included angle θ formed by the soft X-rays irradiated by the soft X-ray ionizer 40 is preferably 150 degrees. Wherein the vertical distance L between the soft X-ray ionizer 40 and the wafer 200 is preferably 1000 mm.
It can be understood that in the wafer cleaning apparatus 100 of the present embodiment, if the electrostatic sensor 30 senses that there is electrostatic charge on the wafer 200, the soft X-ray ionizer 40 starts to irradiate the wafer 200 with soft X-rays to ionize the air in the rotating chamber 10 and further eliminate the electrostatic charge on the wafer 200, and when the electrostatic sensor 30 does not sense that there is electrostatic charge on the wafer 200, the soft X-ray ionizer 40 does not need to be started. Thus, the soft X-ray ionizer 40 is activated only when there is electrostatic charge on the wafer 200, so as to prevent excessive damage to the human body, and to monitor and eliminate the electrostatic charge on the wafer 200 in real time.
In addition, in the soft X-ray ionizer 40, since the density of generated ions is high in the process of removing the electrostatic charges generated on the surface of the wafer 200, air can be ionized and static electricity can be removed in a short time, and secondary charging due to residual ions is not caused, as compared with the prior art. Furthermore, because the soft X-rays emitted by the soft X-ray ionizer have controllable light emitting range and light emitting total amount, the soft X-rays can be effectively controlled to be fully irradiated, and compared with the traditional mode of spraying carbon dioxide fluid and manufacturing a wafer clamp by using carbon materials, the purpose of effectively eliminating electrostatic charges can be achieved.
The cleaning solution supply assembly is used for supplying a cleaning solution to clean the wafer 200.
The cleaning solution supply unit includes a nozzle 51 disposed above the wafer 200 to spray a cleaning solution onto the wafer 200 for cleaning. It is understood that in other embodiments, the cleaning liquid supply device may be disposed outside the rotating chamber 10 and introduce the cleaning liquid through a pipe or the like, which is not limited herein. In this embodiment, the cleaning solution may be a chemical cleaning solution or deionized water.
The cleaning solution recovery assembly 60 is disposed around the spin assembly 20 to block the cleaning solution sputtered from the edge of the wafer 200 from contaminating the peripheral environment during the cleaning process, and to recover the cleaning solution.
It can be understood that when the cleaning liquid is sprayed onto the wafer 200 by the nozzle 51, the cleaning liquid is sprayed from the edge of the wafer 200 to the periphery due to the centrifugal force, and the cleaning liquid can be effectively blocked and recovered by the cleaning liquid recovery assembly 60 of the present invention.
In the present embodiment, the cleaning solution recovery assembly 60 includes a plurality of stoppers. In the present embodiment, the plurality of stoppers include a first stopper 61, a second stopper 62, and a third stopper 63, the first stopper 61 is disposed around the driving assembly 22, the second stopper 62 is disposed around the first stopper 61, and the third stopper 63 is disposed around the second stopper 62 and around the wafer 200 and the turntable 21, that is, the first stopper 61, the second stopper 62, and the third stopper 63 are sequentially disposed around the turntable 20 at equal intervals in a direction away from the turntable 20, and heights of the first stopper 61, the second stopper 62, and the third stopper 63 in the vertical direction are sequentially increased, so that the cleaning solution can be stopped and recovered when the turntable 21 is at different heights.
Specifically, the first blocking member 61 includes a first sidewall 611 and a first blocking wall 612, the first sidewall 611 and the first blocking wall 612 are hollow cylindrical structures, and the first blocking wall 612 is disposed on the top of the first sidewall 611 and is inclined toward the direction approaching the rotating table 21 relative to the first sidewall 611. That is, the inner diameter of the first blocking wall 612 is gradually decreased in a direction from the bottom of the first blocking wall 612 to the top of the first shielding wall.
Similarly, the second blocking member 62 includes a second sidewall 621 and a second blocking wall 622, the second sidewall 621 and the second blocking wall 622 are hollow cylindrical structures, and the second blocking wall 622 is disposed on the top of the second sidewall 621 and is inclined toward the direction close to the rotation stage 21 relative to the first sidewall 611. That is, the inner diameter of the second blocking wall 622 gradually decreases in a direction from the bottom of the second blocking wall 622 to the top of the second blocking wall 622.
Further, the third blocking member 63 includes a third sidewall 631, a third blocking wall 632, and a cover plate 633, wherein the third sidewall 631 and the third blocking wall 632 are hollow cylindrical structures, the cover plate 633 is annular, the third blocking wall 632 is disposed between the third sidewall 631 and the cover plate 633, the third blocking wall 632 is inclined toward the direction close to the turntable 21 with respect to the third sidewall 631, and the cover plate 633 is connected to the third blocking wall 632 and horizontally disposed toward the turntable 21. That is, the inner diameter of the second blocking wall 622 gradually decreases in a direction from the bottom of the second blocking wall 622 to the top of the first protective wall.
The first sidewall 611, the second sidewall 621, and the third sidewall 631 are disposed in parallel, and the heights in the vertical direction are sequentially increased, and the first blocking wall 612, the second blocking wall 622, and the third blocking wall 632 are disposed in parallel, and the lengths are sequentially increased. In this way, the heights of the first blocking member 61, the second blocking member 62 and the third blocking member 63 in the vertical direction are sequentially increased, so that the cleaning liquid can be blocked and recovered when the rotary table 21 is at different heights. Of course, in other embodiments, only the third stopper 63 may be provided.
Referring to fig. 2 and 3, a wafer cleaning apparatus 300 according to a second embodiment of the present invention is different from the wafer cleaning apparatus 100 according to the first embodiment in that: the cleaning solution recovery assembly 70 of the second embodiment is different from the cleaning solution recovery assembly 60 of the first embodiment, and other structures are the same and are not described herein again.
The cleaning solution recovery assembly 70 includes a support base 71, a cleaning solution collection assembly 72, and a plurality of stoppers, wherein the cleaning solution collection assembly 72 is fixedly disposed on the support base 71, and the plurality of stoppers are accommodated in the cleaning solution collection assembly 72.
Specifically, the cleaning liquid collection assembly 72 includes a bottom plate 721, an inner side plate 722, an outer side plate 723, a first partition plate 724, and a top plate 725.
The bottom plate 721 has a central portion formed with a through hole for the rotation member 20 to pass through.
The inner plate 722 and the outer plate 723 are respectively disposed on the inner side and the outer side edge of the upper surface of the bottom plate 721, and are perpendicular to the bottom plate 721. Wherein the inner side plate 722 is disposed opposite the rotating assembly 20.
The first partition 724 is disposed between the inner plate 722 and the outer plate 723, and forms a collecting trough 726 with the bottom plate 721 and the outer plate 723 to collect the cleaning solution in the plurality of barriers and prevent the cleaning solution from overflowing.
It can be understood that the bottom plate 721 is opened with a discharge opening 727, and the discharge opening 727 is located between the first partition plate 724 and the outer plate 723 to discharge the cleaning solution in the collection tank 726 to the outside.
The top plate 725 includes a connecting portion 7250 and first and second ends 7251 and 7252 at opposite ends of the connecting portion 7250, respectively. Wherein, the first end 7251 is fixedly connected with the top of the outer plate 723 and is arranged in the vertical direction; the second end 7252 is fixedly coupled to the blocking member and is disposed substantially horizontally; the connecting portion 7250 connects the first end portion 7251 and the second end portion 7252, and is inclined with respect to the first end portion 7251.
Further, the cleaning solution collection assembly 72 further comprises a fixing assembly 728 for fixedly disposing the cleaning solution collection assembly 72 on the support base 71 and fixedly connecting the top plate 725 with the outer plate 723. The fixing component 728 can be implemented by an existing structure, and is not described in detail herein.
The plurality of blocking members include a first blocking member 73, a second blocking member 74 and a third blocking member 75, wherein the first blocking member 73, the second blocking member 74 and the third blocking member 75 are sequentially overlapped in a direction from top to bottom, and the cross section of the first blocking member 73, the second blocking member 74 and the third blocking member 75 is substantially U-shaped.
Specifically, the first blocking member 73 includes a first top wall 731, a first side wall 732, and a first bottom wall 733, and the first top wall 731 and the first bottom wall 733 are disposed at upper and lower ends of the first side wall 732, and extend toward the direction of the rotating table 21 to form a first collecting cavity. In the present embodiment, an included angle formed between the first bottom wall 733 and the first side wall 732 is an acute angle. The first side wall 732 is opened with a first outflow port (not shown) for discharging the recovered cleaning solution into the collecting tank 726 and then discharging the cleaning solution through the discharge port 727. Wherein the second end 7252 of the top plate 725 abuts against the first top wall 731.
The second blocking member 74 includes a second side wall 741, a second bottom wall 742 and a first baffle 743, wherein the first top wall 731 and the second bottom wall 742 are respectively disposed at the upper and lower ends of the second side wall 741, and extend toward the rotating table 21 to form a second collecting cavity. The included angle formed by the second bottom wall 742 and the second side wall 741 is an acute angle, and the second bottom wall 742 and the first top wall 731 are substantially parallel. The second side wall 741 is opened with a second outlet (not shown) for flowing the recovered washing liquid into the collecting tank 726 and discharging the washing liquid through the discharging port 727. The first blocking plate 743 is disposed at the bottom of the first bottom wall 733 and extends toward the turntable 21.
The third blocking member 75 includes a third sidewall 751, a third bottom wall 752, a second partition 753, and a second baffle 754, wherein the second bottom wall 742 and the third bottom wall 752 are respectively disposed at the upper and lower ends of the third sidewall 751, and extend toward the rotation stage 21 to form a third collecting cavity, such that the third collecting cavity opens toward the rotation stage 21. The angle formed by the second bottom wall 742 and the third side wall 751 is acute, and the third bottom wall 752 is substantially parallel to the second bottom wall 742. The third sidewall 751 is opened with a third outflow port 755 for flowing the recovered washing liquid into the collecting tank 726 and then discharging the washing liquid through a discharge port 727. The second partition plate 753 is disposed on the third bottom wall 752, between inner and outer ends of the third bottom wall 752, and is disposed away from an outer end of the third bottom wall 752. The second stopper 74 is disposed at the bottom of the second bottom wall 742 and extends toward the turntable 21.
It is understood that the first top wall 731, the second side wall 741, and the third side wall 751 are each formed with a vent hole (not shown).
It is understood that in other embodiments, at least one of the first blocking member 73, the second blocking member 74 and the third blocking member 75 may be selectively provided, which is not limited herein.
During the cleaning process, the height of the wafer 200 is equal to the height of the opening formed by the third blocking member 75, so that during the cleaning process, most of the cleaning liquid sprayed from the edge of the wafer 200 is sprayed onto the second baffle 754, flows into the third collection chamber, flows into the collection groove 726 through the third outflow port, and is discharged through the discharge port 727. Of course, a small amount of cleaning fluid is sprayed into the first and second collection chambers.
When the cleaning apparatus 100, 300 according to the embodiment of the present invention is used to clean the wafer 200, the nozzle 51 sprays the cleaning liquid on the surface of the wafer 200 to remove particles attached to the surface of the wafer 200, and at the same time, the rotation assembly 20 rotates at a predetermined rotation speed to drive the rotation table 21 and the wafer 200, and the wafer 200 is cleaned by the centrifugal force during the rotation.
In the wafer cleaning apparatus 100, 300 of the present embodiment, if the electrostatic sensor 30 senses that there is electrostatic charge on the wafer 200, the soft X-ray ionizer 40 starts to irradiate the wafer 200 with soft X-rays to ionize the air in the spin chamber 10 and further eliminate the electrostatic charge on the wafer 200, and when the electrostatic sensor 30 does not sense that there is electrostatic charge on the wafer 200, the soft X-ray ionizer 40 does not need to be started. Thus, the soft X-ray ionizer 40 is activated only when there is electrostatic charge on the wafer 200, so as to prevent excessive damage to the human body, and the electrostatic charge on the wafer 200 can be monitored in real time and eliminated in time, so as to ensure the quality of the wafer 200 and improve the yield of the wafer 200.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention.

Claims (10)

1. A wafer cleaning apparatus, comprising:
a rotation chamber;
the rotating assembly is arranged in the rotating chamber and comprises a rotating table, and a sucking disc is arranged on the rotating table and used for sucking a wafer so as to enable the wafer to rotate along with the rotation of the rotating table;
the electrostatic sensor is used for sensing whether electrostatic charges exist on the wafer or not;
the soft X-ray ionizer is arranged above the wafer, and when the electrostatic sensor senses that electrostatic charges exist on the wafer, soft X-rays are irradiated on the wafer to ionize air in the rotating chamber so as to eliminate the electrostatic charges on the wafer.
2. The wafer cleaning apparatus according to claim 1, wherein the soft X-rays irradiated by the soft X-ray ionizer form an included angle of 150 degrees.
3. The wafer cleaning apparatus according to claim 1, wherein a vertical distance between the soft X-ray ionizer and the wafer is 1000 mm.
4. The wafer cleaning apparatus according to claim 1, wherein the electrostatic sensor is disposed above the wafer.
5. The wafer cleaning apparatus as claimed in claim 1, further comprising:
and the cleaning solution supply assembly comprises a nozzle which is arranged above the wafer and used for spraying cleaning solution to the wafer for cleaning.
6. The wafer cleaning apparatus as claimed in claim 5, further comprising:
and the cleaning liquid recovery assembly is arranged around the rotating assembly and used for blocking and recovering the cleaning liquid.
7. The wafer cleaning apparatus according to claim 6, wherein the cleaning solution recovery assembly comprises a first blocking member, a second blocking member and a third blocking member, the first blocking member, the second blocking member and the third blocking member are sequentially disposed around the rotation assembly at equal intervals in a direction away from the rotation assembly, and heights of the first blocking member, the second blocking member and the third blocking member in a vertical direction are sequentially increased.
8. The wafer cleaning apparatus as claimed in claim 6, wherein the cleaning solution recovery assembly comprises:
a support table disposed around the rotating assembly;
the cleaning liquid collecting assembly is fixedly arranged on the supporting table and is provided with a collecting tank, and a discharge port is formed in the collecting tank;
the cleaning liquid collecting assembly comprises a plurality of blocking parts, the plurality of blocking parts are contained in the cleaning liquid collecting assembly, the blocking parts are sequentially overlapped in the collecting tank from top to bottom, and respectively form a collecting cavity for collecting the cleaning liquid sprayed by the edge of the wafer in the cleaning process, so that the cleaning liquid flows into the collecting tank and is discharged to the outside through the discharge port.
9. The wafer cleaning device according to claim 8, wherein the plurality of blocking members include a first blocking member, a second blocking member and a third blocking member, and the first blocking member, the second blocking member and the third blocking member are sequentially stacked in a top-down direction.
10. The wafer cleaning apparatus of claim 1, wherein the rotation assembly further comprises:
and the driving assembly is arranged below the rotating platform and used for driving the rotating platform to rotate.
CN201910989773.XA 2019-10-17 2019-10-17 Wafer cleaning device Pending CN112676226A (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
CN201910989773.XA CN112676226A (en) 2019-10-17 2019-10-17 Wafer cleaning device

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CN112676226A true CN112676226A (en) 2021-04-20

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CN114130782A (en) * 2021-11-29 2022-03-04 上海华力微电子有限公司 Single wafer chemical liquid recovery device and method
CN114226388A (en) * 2021-11-24 2022-03-25 广东先导微电子科技有限公司 Cleaning improvement method for wafer

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CN114130782A (en) * 2021-11-29 2022-03-04 上海华力微电子有限公司 Single wafer chemical liquid recovery device and method

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