TW201709303A - Workpiece processing method does not enable the grinding particles to adhere to the side surface of the device chip similar to the conventional method using the grinding fluid containing grinding particles - Google Patents
Workpiece processing method does not enable the grinding particles to adhere to the side surface of the device chip similar to the conventional method using the grinding fluid containing grinding particles Download PDFInfo
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- TW201709303A TW201709303A TW105121233A TW105121233A TW201709303A TW 201709303 A TW201709303 A TW 201709303A TW 105121233 A TW105121233 A TW 105121233A TW 105121233 A TW105121233 A TW 105121233A TW 201709303 A TW201709303 A TW 201709303A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
- B23K26/53—Working by transmitting the laser beam through or within the workpiece for modifying or reforming the material inside the workpiece, e.g. for producing break initiation cracks
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
- B24B37/245—Pads with fixed abrasives
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
Description
本發明是有關於一種將板狀之被加工物分割成複數個元件晶片之被加工物的加工方法。 The present invention relates to a method of processing a workpiece in which a plate-shaped workpiece is divided into a plurality of component wafers.
在以行動電話及個人電腦為代表的電子機器中，具備有電子電路(元件)之元件晶片已成為必要的構成要素。元件晶片可藉由例如下列的方式來製造：將以矽等之半導體材料所形成之晶圓的表面以複數條分割預定線(切割道(street))予以劃分，且在各個區域中形成電子電路後，沿著此分割預定線將晶圓分割。 In an electronic device typified by a mobile phone and a personal computer, an element chip having an electronic circuit (component) has become an essential component. The element wafer can be manufactured, for example, by dividing a surface of a wafer formed of a semiconductor material such as germanium into a plurality of predetermined lines (streets), and forming electronic circuits in respective regions. After that, the wafer is divided along the dividing line.
在分割晶圓的方法的其中一個中，已知有使具有穿透性之雷射光線聚光於晶圓的內部以形成藉由多光子吸收形成的改質區域(改質層)，並將此改質區域作為分割起點將晶圓分割成元件晶片的隱形切割(SD：Stealth Dicing)(參照例如專利文獻1)。 In one of the methods of dividing a wafer, it is known to condense a penetrating laser light to the inside of the wafer to form a modified region (metamorphic layer) formed by multiphoton absorption, and This modified region is used as a starting point for dividing the wafer into a stealth cut (SD: Stealth Dicing) of the element wafer (see, for example, Patent Document 1).
在隱形切割中，由於不必藉由切削等在晶圓上形成溝，所以可以將分割預定線的寬度縮小並增加元件晶片的可取得個數。另一方面，在此隱形切割中，會有起因於 殘留的改質區域而使元件晶片的抗折強度容易降低之問題。 In the stealth dicing, since it is not necessary to form a groove on the wafer by cutting or the like, the width of the dividing line can be reduced and the number of available elements of the element wafer can be increased. On the other hand, in this invisible cut, there will be a cause The residual modified region causes a problem that the bending strength of the element wafer is easily lowered.
為了解決這個問題，正在探討研究的有，從晶圓的背面側於深度未達到元件晶片的成品厚度的位置上形成改質區域後，磨削此晶圓的背面側以去除改質區域並且分割成元件晶片之SDBG(Stealth Dicing Before Grinding，隱形切割後研磨)(參照例如專利文獻2、專利文獻3)。 In order to solve this problem, research is underway to form a modified region from the back side of the wafer at a position where the depth does not reach the finished product thickness of the component wafer, and then grind the back side of the wafer to remove the modified region and divide SDBG (Stealth Dicing Before Grinding) of the component wafer (see, for example, Patent Document 2 and Patent Document 3).
然而，當磨削晶圓時，會在作為被磨削面的背面產生磨削應變，而導致元件晶片的抗折強度會降低。於是，在磨削晶圓後，會利用CMP(Chemical Mechanical Polishing，化學機械研磨)等之方法來研磨晶圓以去除磨削應變。 However, when the wafer is ground, the grinding strain is generated on the back surface as the ground surface, and the bending strength of the element wafer is lowered. Then, after the wafer is ground, the wafer is polished by a method such as CMP (Chemical Mechanical Polishing) to remove the grinding strain.
專利文獻1：日本專利特開2002-192370號公報 Patent Document 1: Japanese Patent Laid-Open Publication No. 2002-192370
專利文獻2：國際公開第2003/77295號公報 Patent Document 2: International Publication No. 2003/77295
專利文獻3：日本專利特開2006-12902號公報 Patent Document 3: Japanese Patent Laid-Open Publication No. 2006-12902
但是，當以CMP來研磨經上述之SDBG所磨削、分割後的晶圓時，包含在研磨液中的游離磨粒會侵入相鄰的元件晶片的間隙並附著於側面上。一旦磨粒附著於元件晶片之側面，就會導致在其後之步驟中變得容易發生不良情形。 However, when the wafer which has been ground and divided by the above-described SDBG is polished by CMP, the free abrasive grains contained in the polishing liquid invade the gap between the adjacent element wafers and adhere to the side surface. Once the abrasive particles are attached to the side of the component wafer, it becomes liable to cause a problem in the subsequent steps.
本發明是有鑒於所述之問題點而作成的發明，其目的為提供一種防止磨粒對元件晶片的附著之被加工物的加工方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a method for processing a workpiece to prevent adhesion of abrasive grains to an element wafer.
依據本發明，可提供一種被加工物的加工方法，是沿著分割預定線將板狀之被加工物分割成複數個元件晶片，該被加工物的加工方法的特徵在於具備：改質層形成步驟，從該被加工物之背面側沿著該分割預定線照射對該被加工物具有穿透性之波長的雷射光線，而在比相當於該元件晶片的成品厚度的位置更靠背面側處形成改質層；背面磨削步驟，實施該改質層形成步驟之後，磨削該被加工物的該背面並將該被加工物加工到該元件晶片的成品厚度；分割步驟，實施該改質層形成步驟之後，沿著形成有該改質層的該分割預定線將該被加工物分割成一個個的該元件晶片；及研磨步驟，實施該背面磨削步驟及該分割步驟之後，藉由一邊對該被加工物供給未含有磨粒之研磨液一邊使用含有磨粒之研磨墊來研磨該被加工物之背面，以去除該被加工物之該背面的磨削應變。 According to the present invention, there is provided a method of processing a workpiece, wherein the sheet-shaped workpiece is divided into a plurality of component wafers along a dividing line, and the processing method of the workpiece is characterized in that: the modified layer is formed a step of irradiating, from the back side of the workpiece, the laser beam having a wavelength that is transparent to the workpiece along the line to the division, and the back surface side at a position corresponding to the thickness of the finished product of the element wafer Forming a modified layer; a back grinding step, after performing the reforming layer forming step, grinding the back surface of the workpiece and processing the workpiece to a finished product thickness of the component wafer; dividing the step, implementing the modification After the step of forming a layer, the workpiece is divided into individual component wafers along the predetermined dividing line on which the modified layer is formed; and a grinding step, after performing the back grinding step and the dividing step, The back surface of the workpiece is polished by using a polishing pad containing abrasive grains while supplying a polishing liquid containing no abrasive grains to the workpiece, thereby removing the back surface of the workpiece. Strain.
在本發明中，較理想的是，更具備去疵(gettering)層形成步驟，該去疵層形成步驟是在實施該研磨步驟之後，在該被加工物之該背面形成去疵層。 In the present invention, it is preferable to further provide a gettering layer forming step of forming a deburring layer on the back surface of the workpiece after the grinding step.
又，在本發明中，較理想的是，該研磨墊的硬度(Asker-C)為55度~90度，該研磨墊的壓縮率為2%~15%，包含於該研磨墊中的該磨粒之材質為鑽石、綠碳化矽(Green Carborundum)、白剛鋁石(White Alundum)、氧化鈰(ceria)或氧化鋯，包含於該研磨墊中的該磨粒之粒徑為0.01μm~10μm。 Moreover, in the present invention, it is preferable that the hardness (Asker-C) of the polishing pad is 55 to 90 degrees, and the compression ratio of the polishing pad is 2% to 15%, which is included in the polishing pad. The abrasive grain is made of diamond, green carburundum, white Alundum, ceria or zirconia, and the particle size of the abrasive grain contained in the polishing pad is 0.01 μm. 10 μm.
又，在本發明中，較理想的是，該研磨液為鹼性溶液。 Further, in the invention, it is preferred that the polishing liquid is an alkaline solution.
在本發明之被加工物的加工方法中，由於在研磨步驟中，一邊對被加工物供給未含有磨粒的研磨液一邊使用含有磨粒的研磨墊來研磨被加工物，所以不會有像使用含有磨粒的研磨液之以往的方法一般，磨粒附著在元件晶片之側面的情形。 In the method of processing a workpiece according to the present invention, the workpiece is supplied with a polishing pad containing abrasive grains while the polishing liquid containing no abrasive grains is supplied to the workpiece in the polishing step, so that the workpiece is not polished. A conventional method using a polishing liquid containing abrasive grains generally has a case where abrasive grains are attached to the side surface of the element wafer.
2‧‧‧雷射加工裝置 2‧‧‧ Laser processing equipment
4、14、34‧‧‧工作夾台 4,14,34‧‧‧Working table
6‧‧‧雷射加工單元 6‧‧‧Laser processing unit
8‧‧‧相機 8‧‧‧ camera
18、38‧‧‧主軸殼體 18, 38‧‧‧ spindle housing
11‧‧‧被加工物 11‧‧‧Processed objects
11a‧‧‧表面 11a‧‧‧ surface
11b‧‧‧背面 11b‧‧‧Back
12‧‧‧磨削裝置 12‧‧‧ grinding device
13‧‧‧分割預定線 13‧‧‧Division line
14a、34a‧‧‧保持面 14a, 34a‧‧‧ Keep face
15‧‧‧元件 15‧‧‧ components
16‧‧‧磨削單元 16‧‧‧ grinding unit
17‧‧‧改質層 17‧‧‧Modified layer
19‧‧‧元件晶片 19‧‧‧ Component Wafer
20、40‧‧‧主軸 20, 40‧‧‧ spindle
21‧‧‧保護構件 21‧‧‧Protection components
21a‧‧‧第1面 21a‧‧‧1st
21b‧‧‧第2面 21b‧‧‧2nd
22、42‧‧‧安裝座 22, 42‧‧‧ Mounting
24‧‧‧磨削輪 24‧‧‧ grinding wheel
26‧‧‧輪基台 26‧‧‧ wheel base
28‧‧‧磨削磨石 28‧‧‧ grinding grinding stone
32‧‧‧研磨裝置 32‧‧‧ grinding device
36‧‧‧研磨單元 36‧‧‧grinding unit
44‧‧‧研磨墊 44‧‧‧ polishing pad
L‧‧‧雷射光線 L‧‧‧Laser light
圖1是示意地顯示被加工物等的立體圖。 FIG. 1 is a perspective view schematically showing a workpiece and the like.
圖2是示意地顯示改質層形成步驟之立體圖。 Fig. 2 is a perspective view schematically showing a step of forming a modified layer.
圖3(A)及圖3(B)是示意地顯示背面磨削步驟及分割步驟的局部剖面側視圖。 3(A) and 3(B) are partial cross-sectional side views schematically showing a back grinding step and a dividing step.
圖4(A)是示意地顯示研磨步驟的局部剖面側視圖，圖4(B)是示意地顯示研磨步驟後之被加工物的剖面圖。 4(A) is a partial cross-sectional side view schematically showing a polishing step, and FIG. 4(B) is a cross-sectional view schematically showing the workpiece after the polishing step.
參照附圖，說明本發明的實施形態。本實施形態 之被加工物的加工方法包含改質層形成步驟(參照圖2)、背面磨削步驟(參照圖3(A)及圖3(B))、分割步驟(參照圖3(A)及圖3(B))、研磨步驟(參照圖4(A)及圖4(B))及去疵(gettering)層形成步驟。 Embodiments of the present invention will be described with reference to the drawings. This embodiment The processing method of the workpiece includes a reforming layer forming step (see FIG. 2), a back grinding step (see FIGS. 3(A) and 3(B)), and a dividing step (see FIG. 3(A) and FIG. 3). (B)), a polishing step (see FIGS. 4(A) and 4(B)), and a gettering layer forming step.
在改質層形成步驟中，是對被加工物照射具有穿透性之波長的雷射光線，以形成沿著分割預定線的改質層。在背面磨削步驟中，是磨削被加工物的背面，並將被加工物加工成元件晶片的成品厚度。在分割步驟中，是沿分割預定線將被加工物分割成元件晶片。 In the reforming layer forming step, the workpiece is irradiated with a laser beam having a penetrating wavelength to form a modified layer along the dividing line. In the back grinding step, the back surface of the workpiece is ground and the workpiece is processed into the finished thickness of the component wafer. In the dividing step, the workpiece is divided into component wafers along a predetermined dividing line.
在研磨步驟中，是一邊對被加工物供給未含有磨粒之研磨液一邊使用含有磨粒之研磨墊來研磨被加工物之背面。藉此，將被加工物之背面的磨削應變去除。在去疵層形成步驟中，是在被加工物的背面形成去疵層。以下，詳細敘述本實施形態之被加工物的加工方法。 In the polishing step, the back surface of the workpiece is polished by using a polishing pad containing abrasive grains while supplying a polishing liquid containing no abrasive grains to the workpiece. Thereby, the grinding strain on the back surface of the workpiece is removed. In the de-layering step, a de-ruthenium layer is formed on the back surface of the workpiece. Hereinafter, a method of processing the workpiece according to the embodiment will be described in detail.
圖1是示意地顯示本實施形態中被加工之被加工物等的立體圖。如圖1所示，被加工物11為例如以矽等之半導體材料形成的圓盤狀之晶圓，並將其表面11a側區分為中央的元件區域、和包圍元件區域的外周剩餘區域。元件區域是以排列成格子狀的複數條分割預定線(切割道)13進一步劃分成複數個區域，且在各個區域中形成有IC、LSI等元件15。 Fig. 1 is a perspective view schematically showing a workpiece and the like to be processed in the embodiment. As shown in FIG. 1, the workpiece 11 is, for example, a disk-shaped wafer formed of a semiconductor material such as tantalum, and the surface 11a side is divided into a central element region and a peripheral remaining region surrounding the element region. The element region is further divided into a plurality of regions by a plurality of predetermined dividing lines (cutting streets) 13 arranged in a lattice shape, and elements 15 such as ICs and LSIs are formed in the respective regions.
再者，在本實施形態中，雖然是使用矽等之半導體材料所形成之晶圓作為被加工物11，但是並未限制被加工物11之材質、形狀等。也可以使用例如陶瓷、樹脂、金 屬等的材料所形成之基板作為被加工物11。同樣地，也未限制分割預定線13之配置及元件15之種類等。 In the present embodiment, a wafer formed of a semiconductor material such as tantalum is used as the workpiece 11, but the material, shape, and the like of the workpiece 11 are not limited. It is also possible to use, for example, ceramics, resins, gold A substrate formed of a material such as a genus is used as the workpiece 11. Similarly, the arrangement of the division planned line 13 and the type of the element 15 are not limited.
在本實施形態之被加工物的分割方法中，首先，是在此被加工物11之表面11a側貼附保護構件21。保護構件21可為例如與被加工物11大致相同形狀的黏著膠帶、樹脂基板、與被加工物11相同種類或相異種類之晶圓等，且在其第1面21a側上設有以接著劑等所形成之接著層。 In the method of dividing a workpiece according to the present embodiment, first, the protective member 21 is attached to the surface 11a side of the workpiece 11. The protective member 21 may be, for example, an adhesive tape having substantially the same shape as the workpiece 11 , a resin substrate, a wafer of the same type or a different type as the workpiece 11 , and the like on the first surface 21 a side thereof. The adhesive layer formed by the agent or the like.
據此，藉由使保護構件21之第1面21a側接觸於被加工物11之表面11a側，就能將保護構件21貼附於被加工物11上。藉由像這樣將保護構件21貼附於被加工物11上，就能防止磨削時施加之荷重等所造成的元件15之破損。 As a result, the protective member 21 can be attached to the workpiece 11 by bringing the first surface 21a side of the protective member 21 into contact with the surface 11a side of the workpiece 11. By attaching the protective member 21 to the workpiece 11 as described above, it is possible to prevent breakage of the element 15 due to the load applied during grinding or the like.
在被加工物11上貼附保護構件21之後，會實施改質層形成步驟，該改質層形成步驟是對被加工物11照射具有穿透性之波長的雷射光線，以形成沿著分割預定線的改質層。圖2是示意地顯示改質層形成步驟之立體圖。改質層形成步驟是以例如圖2所示之雷射加工裝置2來實施。 After the protective member 21 is attached to the workpiece 11, a reforming layer forming step is performed in which the workpiece 11 is irradiated with a laser beam having a penetrating wavelength to form a segmentation along the segment. The modified layer of the scheduled line. Fig. 2 is a perspective view schematically showing a step of forming a modified layer. The reforming layer forming step is carried out, for example, by the laser processing apparatus 2 shown in Fig. 2.
雷射加工裝置2具備有吸引、保持被加工物11的工作夾台4。工作夾台4會與馬達等的旋轉驅動源(未圖示)連結，並繞著與鉛直方向大致平行的旋轉軸旋轉。又，工作夾台4的下方設置有工作台移動機構(圖未示)，工作夾台4是藉由此工作台移動機構而在水平方向上移動。 The laser processing apparatus 2 is provided with a work chuck 4 that attracts and holds the workpiece 11. The work chuck 4 is coupled to a rotary drive source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a table moving mechanism (not shown) is provided below the work chuck 4, and the work chuck 4 is moved in the horizontal direction by the table moving mechanism.
工作夾台4之上表面會成為吸引、保持已貼附於被加工物11之保護構件21之第2面21b側的保持面。在此保持面上，是通過形成於工作夾台4的內部的流路(圖未示)等 使吸引源(圖未示)的負壓作用，而產生用於吸引保護構件21的吸引力。 The upper surface of the work chuck 4 serves as a holding surface for sucking and holding the second surface 21b side of the protective member 21 attached to the workpiece 11. The holding surface is formed by a flow path (not shown) formed in the inside of the work chuck 4 or the like. The suction force of the suction source (not shown) acts to attract the attraction force of the protective member 21.
工作夾台4的上方配置有雷射加工單元6。在與雷射加工單元6相鄰之位置上，設置有用於拍攝被加工物11之相機8。雷射加工單元6會將以雷射振盪器(圖未示)脈衝振盪產生的雷射光線L朝下方照射。雷射振盪器是構成為可以振盪產生被加工物11難以吸收之波長(具有穿透性之波長)的雷射光線L。 A laser processing unit 6 is disposed above the work chuck 4 . At a position adjacent to the laser processing unit 6, a camera 8 for photographing the workpiece 11 is provided. The laser processing unit 6 irradiates the laser beam L generated by the pulse oscillation of a laser oscillator (not shown) downward. The laser oscillator is a laser beam L that is configured to oscillate at a wavelength (wavelength having transparency) that is difficult to be absorbed by the workpiece 11.
在改質層形成步驟中，首先，是使已貼附於被加工物11之保護構件21之第2面21b接觸於工作夾台4之保持面，並使吸引源之負壓作用。藉此，被加工物11就能在背面11b側露出於上方的狀態下被吸引、保持在工作夾台4上。 In the reforming layer forming step, first, the second surface 21b of the protective member 21 attached to the workpiece 11 is brought into contact with the holding surface of the work chuck 4, and the suction force of the suction source acts. Thereby, the workpiece 11 can be sucked and held on the work chuck 4 in a state where the back surface 11b side is exposed upward.
其次，使保持了被加工物11之工作夾台4移動、旋轉，以將雷射加工單元6對準於加工對象之分割預定線15的端部。並且，從雷射加工單元6朝向被加工物11之背面11b照射雷射光線L，並且使工作夾台4在與加工對象之分割預定線13平行的方向上移動。亦即，從被加工物11之背面11b側沿著分割預定線13照射雷射光線L。 Next, the work chuck 4 holding the workpiece 11 is moved and rotated to align the laser processing unit 6 to the end of the planned dividing line 15 of the workpiece. Then, the laser beam L is irradiated from the laser processing unit 6 toward the back surface 11b of the workpiece 11, and the work chuck 4 is moved in a direction parallel to the planned dividing line 13 of the workpiece. That is, the laser beam L is irradiated from the side of the back surface 11b of the workpiece 11 along the dividing line 13 to be divided.
此時，雷射光線L之聚光點的位置是在被加工物11的內部，並對準於比相當於元件晶片的成品厚度的位置更靠背面11b側處。藉此，於雷射光束L的聚光點附近藉多光子吸收而改質，而可以形成沿著加工對象之分割預定線15的改質層17。亦即，改質層17是形成在比相當於元件晶 片的成品厚度的位置更靠背面11b側處。當沿著全部的分割預定線15都形成改質層17後，改質層形成步驟即結束。 At this time, the position of the light-converging point of the laser light L is inside the workpiece 11 and is aligned with the position of the back surface 11b which is closer to the thickness of the finished product of the element wafer. Thereby, it is modified by multiphoton absorption in the vicinity of the condensed point of the laser beam L, and the reforming layer 17 along the planned dividing line 15 of the processing target can be formed. That is, the modified layer 17 is formed in the ratio of the equivalent element crystal The position of the finished product of the sheet is at the side of the backrest surface 11b. When the reforming layer 17 is formed along all of the planned dividing lines 15, the reforming layer forming step is ended.
在改質層形成步驟之後，會實施磨削被加工物11之背面11b的背面磨削步驟、和將被加工物11分割成元件晶片的分割步驟。圖3(A)及圖3(B)是示意地顯示背面磨削步驟及分割步驟的局部剖面側視圖。背面磨削步驟及分割步驟是以例如圖3(A)及圖3(B)所示之磨削裝置12來實施。 After the reforming layer forming step, a back grinding step of grinding the back surface 11b of the workpiece 11 and a dividing step of dividing the workpiece 11 into element wafers are performed. 3(A) and 3(B) are partial cross-sectional side views schematically showing a back grinding step and a dividing step. The back grinding step and the dividing step are carried out, for example, by the grinding device 12 shown in Figs. 3(A) and 3(B).
磨削裝置12具備有吸引、保持被加工物11的工作夾台14。工作夾台14會與馬達等的旋轉驅動源(未圖示)連結，並繞著與鉛直方向大致平行的旋轉軸旋轉。又，工作夾台14的下方設置有工作台移動機構(圖未示)，工作夾台14是藉此工作台移動機構而在水平方向上移動。 The grinding device 12 is provided with a work chuck 14 that sucks and holds the workpiece 11 . The work chuck 14 is coupled to a rotary drive source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a table moving mechanism (not shown) is provided below the work chuck 14, and the work table 14 is moved in the horizontal direction by the table moving mechanism.
工作夾台14之上表面會成為吸引、保持已貼附於被加工物11之保護構件21之第2面21b側的保持面14a。在此保持面14a上，是通過形成於工作夾台14的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用於吸引保護構件21的吸引力。 The upper surface of the work chuck 14 serves as a holding surface 14a that sucks and holds the second surface 21b side of the protective member 21 attached to the workpiece 11. In the holding surface 14a, a suction force (not shown) or the like is formed in a flow path (not shown) formed inside the working chuck 14 to generate an attraction force for attracting the protective member 21. .
工作夾台14的上方配置有磨削單元16。磨削單元16具備有被支撐在磨削單元升降機構(圖未示)的主軸殼體18。在主軸殼體18中收容有主軸20，且在主軸20之下端部固定有圓盤狀之安裝座22。 A grinding unit 16 is disposed above the work chuck 14 . The grinding unit 16 is provided with a spindle housing 18 that is supported by a grinding unit lifting mechanism (not shown). A spindle 20 is housed in the spindle housing 18, and a disk-shaped mount 22 is fixed to the lower end of the spindle 20.
在安裝座22之下表面裝設有與安裝座22大致相同直徑的磨削輪24。磨削輪24具備有以不銹鋼、鋁等金屬材料所形成的輪基台26。輪基台26的下表面，環狀地配置 排列有複數個磨削磨石28。 A grinding wheel 24 having substantially the same diameter as the mounting seat 22 is mounted on the lower surface of the mount 22. The grinding wheel 24 is provided with a wheel base 26 formed of a metal material such as stainless steel or aluminum. The lower surface of the wheel base 26 is annularly arranged A plurality of grinding stones 28 are arranged.
在主軸20的上端側(基端側)連結有馬達等的旋轉驅動源(圖未示)。磨削輪24是藉由從這個旋轉驅動源所傳達的旋轉力而繞著與鉛直方向大致平行的旋轉軸旋轉。 A rotary drive source (not shown) such as a motor is coupled to the upper end side (base end side) of the main shaft 20. The grinding wheel 24 is rotated about a rotation axis substantially parallel to the vertical direction by a rotational force transmitted from this rotational drive source.
在背面磨削步驟及分割步驟中，首先，是使已貼附於被加工物11之保護構件21之第2面21b接觸於工作夾台14之保持面14a，並使吸引源之負壓作用。藉此，被加工物11就能在背面11b側露出於上方的狀態下被吸引、保持在工作夾台14上。 In the back grinding step and the dividing step, first, the second surface 21b of the protective member 21 attached to the workpiece 11 is brought into contact with the holding surface 14a of the work chuck 14, and the suction force of the suction source is applied. . Thereby, the workpiece 11 can be sucked and held on the work chuck 14 in a state where the back surface 11b side is exposed upward.
其次，使工作夾台14移動至磨削輪24的下方。然後，如圖3(A)所示，使工作夾台14與磨削輪24各自旋轉，且一邊供給純水等之磨削液一邊使主軸殼體18下降。將主軸殼體18的下降量調整成使磨削磨石28之下表面被推抵在被加工物11之背面11b之程度。 Next, the work chuck 14 is moved below the grinding wheel 24. Then, as shown in FIG. 3(A), the work chuck 14 and the grinding wheel 24 are each rotated, and the spindle housing 18 is lowered while supplying a grinding fluid such as pure water. The amount of lowering of the spindle housing 18 is adjusted such that the lower surface of the grinding stone 28 is pushed against the back surface 11b of the workpiece 11.
藉此，就能磨削被加工物11之背面11b側。此磨削是例如邊測量被加工物11之厚度邊進行。在本實施形態中，由於是沿著分割預定線13形成改質層17，所以被加工物11會因磨削時施加的壓力而以改質層17為起點斷裂，而沿著分割預定線被分割。 Thereby, the back surface 11b side of the workpiece 11 can be ground. This grinding is performed, for example, while measuring the thickness of the workpiece 11. In the present embodiment, since the modified layer 17 is formed along the planned dividing line 13, the workpiece 11 is broken by the reforming layer 17 due to the pressure applied during grinding, and is cut along the dividing line. segmentation.
如圖3(B)所示，一旦被加工物11薄化至成品厚度且沿所有的分割預定線13被分割成複數個元件晶片19時，背面磨削步驟及分割步驟即結束。 As shown in FIG. 3(B), once the workpiece 11 is thinned to the thickness of the finished product and divided into a plurality of component wafers 19 along all the division planned lines 13, the back grinding step and the dividing step are completed.
再者，在本實施形態中，由於是在比相當於元件晶片19的成品厚度的位置更靠背面11b側處形成改質層17， 所以當將被加工物11薄化到元件晶片的成品厚度時，即可將改質層17從被加工物11上完全地去除。因此，不會有起因於殘留的改質層17而使元件晶片19的抗折強度降低之情形。 Further, in the present embodiment, the reforming layer 17 is formed at the side of the back surface 11b at a position corresponding to the thickness of the finished product of the element wafer 19, Therefore, when the workpiece 11 is thinned to the finished thickness of the component wafer, the modified layer 17 can be completely removed from the workpiece 11. Therefore, there is no possibility that the bending strength of the element wafer 19 is lowered due to the remaining reforming layer 17.
在分割步驟後，會實施研磨被加工物11之背面11b的研磨步驟。圖4(A)是示意地顯示研磨步驟的局部剖面側視圖。研磨步驟是以例如圖4(A)所示之研磨裝置32來實施。研磨裝置32具備有吸引、保持被加工物11的工作夾台34。 After the dividing step, a grinding step of grinding the back surface 11b of the workpiece 11 is performed. Fig. 4 (A) is a partial cross-sectional side view schematically showing a grinding step. The polishing step is carried out, for example, by the polishing apparatus 32 shown in Fig. 4(A). The polishing apparatus 32 is provided with a work chuck 34 that sucks and holds the workpiece 11.
工作夾台34是與馬達等的旋轉驅動源(未圖示)連結，並繞著與鉛直方向大致平行的旋轉軸旋轉。又，工作夾台34的下方設置有工作台移動機構(圖未示)，工作夾台34是藉此工作台移動機構而在水平方向上移動。 The work chuck 34 is coupled to a rotational drive source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a table moving mechanism (not shown) is provided below the work chuck 34, and the work table 34 is moved in the horizontal direction by the table moving mechanism.
工作夾台34之上表面會成為吸引、保持已貼附於被加工物11之保護構件21之第2面21b側的保持面34a。在此保持面34a上，是通過形成於工作夾台34的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用，而產生用於吸引保護構件21的吸引力。 The upper surface of the work chuck 34 serves as a holding surface 34a that sucks and holds the second surface 21b side of the protective member 21 attached to the workpiece 11. In the holding surface 34a, a suction force (not shown) or the like is formed in a flow path (not shown) formed inside the working chuck 34 to generate an attraction force for attracting the protective member 21. .
工作夾台34的上方配置有研磨單元36。研磨單元36具備有被支撐在研磨單元升降機構(圖未示)的主軸殼體38。在主軸殼體38中收容有主軸40，且在主軸40之下端部固定有圓盤狀之安裝座42。 A polishing unit 36 is disposed above the work chuck 34. The polishing unit 36 is provided with a spindle housing 38 that is supported by a polishing unit elevating mechanism (not shown). A spindle 40 is housed in the spindle housing 38, and a disk-shaped mount 42 is fixed to the lower end of the spindle 40.
在安裝座42之下表面裝設有與安裝座42大致相同直徑的研磨墊44。此研磨墊44是以例如不織布或發泡胺 甲酸乙酯等所形成的研磨布、和固定於研磨布上之磨粒所構成。研磨墊44的厚度為例如3mm以上，且在研磨墊44的下表面(研磨面)之整體上，以格子狀的方式形成有深度為2.5mm以上的溝。 A polishing pad 44 having substantially the same diameter as the mount 42 is mounted on the lower surface of the mount 42. The polishing pad 44 is, for example, a non-woven fabric or a foaming amine A polishing cloth formed of ethyl formate or the like and abrasive grains fixed on the polishing cloth. The thickness of the polishing pad 44 is, for example, 3 mm or more, and a groove having a depth of 2.5 mm or more is formed in a lattice shape on the entire lower surface (polishing surface) of the polishing pad 44.
研磨墊44的硬度(Asker-C)宜為55度~90度，且研磨墊44的壓縮率宜為2%~15%。再者，壓縮率是將已施加300g/cm2的荷重之情形下的研磨墊44之厚度設為t1，並將已施加2000g/cm2的荷重之情形下的研磨墊44之厚度設為t2，藉(t1-t2)/t1×100而求得。藉由將研磨墊44的壓縮率設為2%~15%，就能維持高的研磨率並且抑制被加工物11之邊緣的缺損。 The hardness (Asker-C) of the polishing pad 44 is preferably 55 to 90 degrees, and the compression ratio of the polishing pad 44 is preferably 2% to 15%. Further, the compression ratio is a thickness of the polishing pad 44 in the case where a load of 300 g/cm 2 has been applied, and the thickness of the polishing pad 44 in the case where a load of 2000 g/cm 2 has been applied is set to t2. , obtained by (t1-t2)/t1×100. By setting the compression ratio of the polishing pad 44 to 2% to 15%, it is possible to maintain a high polishing rate and suppress the defect of the edge of the workpiece 11.
又，磨粒的材質為例如鑽石、綠碳化矽(Green Carborundum)、白剛鋁石(White Alundum)、氧化鈰或氧化鋯等，且磨粒的粒徑為例如0.01μm~10μm，較理想的是0.1μm~2μm。然而，磨粒的材質或磨粒的粒徑是可以因應被加工物11的材質等而任意地變更的。 Further, the material of the abrasive grains is, for example, diamond, green carborundum, white Alundum, cerium oxide or zirconium oxide, and the particle diameter of the abrasive grains is, for example, 0.01 μm to 10 μm, which is preferable. It is 0.1 μm to 2 μm. However, the material of the abrasive grains or the particle diameter of the abrasive grains can be arbitrarily changed in accordance with the material of the workpiece 11 or the like.
在主軸40的上端側(基端側)連結有馬達等的旋轉驅動源(圖未示)。研磨墊44是藉由從這個旋轉驅動源所傳達的旋轉力而繞著與鉛直方向大致平行的旋轉軸旋轉。 A rotary drive source (not shown) such as a motor is coupled to the upper end side (base end side) of the main shaft 40. The polishing pad 44 is rotated about a rotation axis substantially parallel to the vertical direction by a rotational force transmitted from this rotational drive source.
在研磨被加工物11之背面11b時，首先，是使已貼附於被加工物11之保護構件21之第2面21b接觸於工作夾台34之保持面34a，並使吸引源之負壓作用。藉此，被加工物11就能在背面11b側露出於上方的狀態下被吸引、保持在工作夾台34上。 When the back surface 11b of the workpiece 11 is polished, first, the second surface 21b of the protective member 21 attached to the workpiece 11 is brought into contact with the holding surface 34a of the work chuck 34, and the suction source is under negative pressure. effect. Thereby, the workpiece 11 can be sucked and held on the work chuck 34 in a state where the back surface 11b side is exposed upward.
其次，使工作夾台34移動至研磨墊44的下方。然後，如圖4(A)所示，使工作夾台34及研磨墊44各自旋轉，且一邊供給研磨液一邊使主軸殼體38下降。將主軸殼體38的下降量調整成使研磨墊44之下表面(研磨面)被推抵在被加工物11之背面11b之程度。藉此，就能研磨被加工物11之背面11b而去除磨削應變。 Next, the work chuck 34 is moved below the polishing pad 44. Then, as shown in FIG. 4(A), the working chuck 34 and the polishing pad 44 are each rotated, and the spindle housing 38 is lowered while supplying the polishing liquid. The amount of lowering of the spindle housing 38 is adjusted such that the lower surface (polishing surface) of the polishing pad 44 is pushed against the back surface 11b of the workpiece 11. Thereby, the back surface 11b of the workpiece 11 can be ground to remove the grinding strain.
作為研磨液，可使用例如未含有磨粒的鹼性溶液。這是因為如果研磨液中含有磨粒，會使磨粒變得容易殘留於相鄰的元件晶片19的間隙中。在本實施形態中，由於使用含有磨粒的研磨墊44，所以即使研磨液未含有磨粒仍然能夠適當地研磨被加工物11。再者，作為鹼性溶液，能夠使用的有氫氧化鉀、氫氧化鈉、四甲基氫氧化銨(TMAH)、碳酸鉀、碳酸氫鈉、碳酸氫鉀等。 As the polishing liquid, for example, an alkaline solution containing no abrasive grains can be used. This is because if the polishing liquid contains abrasive grains, the abrasive grains are likely to remain in the gaps of the adjacent element wafers 19. In the present embodiment, since the polishing pad 44 containing the abrasive grains is used, the workpiece 11 can be appropriately polished even if the polishing liquid does not contain the abrasive grains. Further, as the alkaline solution, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide (TMAH), potassium carbonate, sodium hydrogencarbonate or potassium hydrogencarbonate can be used.
圖4(B)是示意地顯示研磨步驟後之被加工物11的剖面圖。在本實施形態的研磨步驟中，由於如上述地使用未含有磨粒的研磨液來研磨被加工物11，所以不會有磨粒附著在相當於分割溝15之元件晶片19的側面上的情形。 Fig. 4 (B) is a cross-sectional view schematically showing the workpiece 11 after the polishing step. In the polishing step of the present embodiment, since the workpiece 11 is polished by using the polishing liquid containing no abrasive grains as described above, the abrasive grains do not adhere to the side surface of the element wafer 19 corresponding to the division groove 15. .
在研磨步驟之後，會實施在被加工物11之背面形成去疵層的去疵層形成步驟。去疵層形成步驟是利用例如在研磨步驟中所使用的研磨裝置32，並用與研磨步驟同樣的方法來實施。然而，在此去疵層形成步驟中，是在不將研磨墊44的下表面(研磨面)推抵於被加工物11的背面11b的情形下來使其接觸。亦即，不會從研磨墊44對被加工物11施加壓力。 After the grinding step, a deicing layer forming step of forming a degumming layer on the back surface of the workpiece 11 is performed. The decarburization layer formation step is carried out by, for example, the polishing apparatus 32 used in the polishing step, and is carried out in the same manner as the polishing step. However, in the step of forming the ruthenium layer, the lower surface (polishing surface) of the polishing pad 44 is brought into contact without being pushed against the back surface 11b of the workpiece 11. That is, no pressure is applied to the workpiece 11 from the polishing pad 44.
像這樣，藉由利用研磨墊44僅稍微摩擦被加工物11之背面11b，可形成含有微細的應變的去疵層。藉由此去疵層，可以防止由金屬元素等所形成的元件15之污染。再者，也可以在背面磨削步驟中使所形成的磨削應變僅少許殘存，來做成去疵層。在此情形下，就沒有必要在研磨步驟之後實施去疵層形成步驟。 As described above, by slightly rubbing the back surface 11b of the workpiece 11 by the polishing pad 44, a deburring layer containing fine strain can be formed. By removing the layer, the contamination of the element 15 formed of a metal element or the like can be prevented. Further, in the back grinding step, the formed grinding strain may be left only a little to form a deburring layer. In this case, it is not necessary to carry out the de-layering step after the grinding step.
如以上所述，在本實施形態之被加工物的加工方法中，由於在研磨步驟中，一邊對被加工物11供給未含有磨粒的研磨液一邊使用含有磨粒的研磨墊44來研磨被加工物11，所以不會有像使用含有磨粒的研磨液之以往的方法一般，有磨粒附著在元件晶片19之側面的情形。 As described above, in the method of processing a workpiece according to the present embodiment, the polishing pad containing the abrasive grains is supplied to the workpiece 11 while the polishing liquid is not used, and the polishing pad 44 containing the abrasive grains is used for polishing. Since the workpiece 11 is processed, there is no conventional method of using a polishing liquid containing abrasive grains, and abrasive grains adhere to the side surface of the element wafer 19.
再者，本發明並不限定於上述實施形態之記載，可作各種變更而實施。例如，在上述實施形態中，雖然是將背面磨削步驟和分割步驟同時實施，但將背面磨削步驟和分割步驟分別地實施亦可。 Furthermore, the present invention is not limited to the description of the above embodiments, and can be implemented in various modifications. For example, in the above embodiment, the back grinding step and the dividing step are simultaneously performed, but the back grinding step and the dividing step may be separately performed.
具體而言，可以例如在實施分割步驟後，再實施背面磨削步驟。在此情形下，在分割步驟中，可以採用例如，將貼附於被加工物11上的擴張膠帶擴張之方法、或以按壓刀刃沿分割預定線13按壓被加工物11之方法等。 Specifically, the back grinding step can be performed, for example, after the dividing step is performed. In this case, in the dividing step, for example, a method of expanding the expansion tape attached to the workpiece 11 or a method of pressing the workpiece 11 along the dividing line 13 by the pressing blade may be employed.
當然，在實施上述實施形態之背面磨削步驟及分割步驟之後，亦可因應需要而以追加方式實施將擴張膠帶擴張之分割步驟、或以按壓刀刃按壓之分割步驟。 Of course, after performing the back grinding step and the dividing step of the above-described embodiment, the step of dividing the expansion tape or the step of pressing the pressing blade may be additionally performed as needed.
另外，上述實施形態之構造、方法等，只要在不脫離本發明的目的之範圍下，均可適當變更而實施。 In addition, the structure, the method, and the like of the above-described embodiments can be appropriately modified and implemented without departing from the scope of the invention.
2‧‧‧雷射加工裝置 2‧‧‧ Laser processing equipment
4‧‧‧工作夾台 4‧‧‧Working table
6‧‧‧雷射加工單元 6‧‧‧Laser processing unit
8‧‧‧主軸殼體 8‧‧‧ spindle housing
11‧‧‧被加工物 11‧‧‧Processed objects
11b‧‧‧背面 11b‧‧‧Back
15‧‧‧元件 15‧‧‧ components
17‧‧‧改質層 17‧‧‧Modified layer
21‧‧‧保護構件 21‧‧‧Protection components
21b‧‧‧第2面 21b‧‧‧2nd
L‧‧‧雷射光線 L‧‧‧Laser light
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| JP2015153567A JP6300763B2 (en) | 2015-08-03 | 2015-08-03 | Workpiece processing method |
| JP2015-153567 | 2015-08-03 |
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| TW201709303A true TW201709303A (en) | 2017-03-01 |
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| DE102017106854A1 (en) | 2017-03-30 | 2018-10-04 | Infineon Technologies Ag | Carrier assembly and method for processing a carrier |
| JP6965018B2 (en) * | 2017-05-01 | 2021-11-10 | 株式会社ディスコ | Wafer processing method |
| JP6906845B2 (en) * | 2017-06-22 | 2021-07-21 | 株式会社ディスコ | Processing method of work piece |
| JP6836491B2 (en) * | 2017-11-07 | 2021-03-03 | 株式会社荏原製作所 | Methods and equipment for dividing the substrate on which the device is formed into individual chips |
| JP7304708B2 (en) * | 2019-02-15 | 2023-07-07 | 株式会社ディスコ | Wafer processing method |
| CN110732790A (en) * | 2019-10-28 | 2020-01-31 | 东莞记忆存储科技有限公司 | processing method for cutting package substrate |
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| JP3408805B2 (en) | 2000-09-13 | 2003-05-19 | 浜松ホトニクス株式会社 | Cutting origin region forming method and workpiece cutting method |
| ES2377521T3 (en) | 2002-03-12 | 2012-03-28 | Hamamatsu Photonics K.K. | Method to divide a substrate |
| JP4523252B2 (en) * | 2003-09-08 | 2010-08-11 | 株式会社ディスコ | Semiconductor wafer processing method and processing apparatus |
| JP2005311025A (en) | 2004-04-21 | 2005-11-04 | Naoetsu Electronics Co Ltd | Manufacturing method of silicon wafer, and the silicon wafer manufactured thereby |
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| JP2008060220A (en) * | 2006-08-30 | 2008-03-13 | Disco Abrasive Syst Ltd | Gettering layer forming device |
| JP2010225987A (en) * | 2009-03-25 | 2010-10-07 | Disco Abrasive Syst Ltd | Polishing method of wafer and polishing pad |
| JP2011151070A (en) * | 2010-01-19 | 2011-08-04 | Disco Abrasive Syst Ltd | Processing method for wafer |
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| JP6208498B2 (en) * | 2013-08-29 | 2017-10-04 | 株式会社ディスコ | Polishing pad and wafer processing method |
| JP6230422B2 (en) * | 2014-01-15 | 2017-11-15 | 株式会社ディスコ | Wafer processing method |
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| TWI694506B (en) | 2020-05-21 |
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