TW201712746A - Workpiece processing method capable of preventing attachment of grains to a device chip - Google Patents

Workpiece processing method capable of preventing attachment of grains to a device chip Download PDF

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Publication number
TW201712746A
TW201712746A TW105121235A TW105121235A TW201712746A TW 201712746 A TW201712746 A TW 201712746A TW 105121235 A TW105121235 A TW 105121235A TW 105121235 A TW105121235 A TW 105121235A TW 201712746 A TW201712746 A TW 201712746A
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Taiwan
Prior art keywords
workpiece
dividing
grinding
polishing
polishing pad
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TW105121235A
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Chinese (zh)
Inventor
Norihisa Arifuku
Jun-Yong Seo
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Disco Corp
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Priority to JP2015153566A priority Critical patent/JP2017034128A/en
Application filed by Disco Corp filed Critical Disco Corp
Publication of TW201712746A publication Critical patent/TW201712746A/en

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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02013Grinding, lapping
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002Preparing wafers
    • H01L21/02005Preparing bulk and homogeneous wafers
    • H01L21/02008Multistep processes
    • H01L21/0201Specific process step
    • H01L21/02021Edge treatment, chamfering
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components

Abstract

The object of the present invention is to provide a workpiece processing method capable of preventing attachment of grains to a device chip. The solution is a workpiece processing method, which includes: a dividing step of dividing a workpiece into separated device chips by forming division grooves having a depth equivalent to a finished product thickness of a device chip on a surface of the workpiece along a predetermined division line, and grinding a back surface of the workpiece to expose the division grooves to the back surface side; and a grinding step of supplying a grinding liquid without containing grains to the workpiece when using a grinding pad containing grains to grind the back surface of the workpiece, so as to remove grinding stress of the back surface of the workpiece and process an edge part of each divided device chip into a curved surface shape.

Description

被加工物的加工方法 Processing method of processed objects 發明領域 Field of invention
本發明是有關於一種將板狀之被加工物分割成複數個元件晶片之被加工物的加工方法。 The present invention relates to a method of processing a workpiece in which a plate-shaped workpiece is divided into a plurality of component wafers.
發明背景 Background of the invention
在以行動電話及個人電腦為代表的電子機器中,具備有電子電路(元件)之元件晶片已成為必要的構成要素。元件晶片可藉由例如下列的方式來製造:將以矽等之半導體材料所形成之晶圓的表面以複數條分割預定線(切割道(street))予以劃分,且在各個區域中形成電子電路後,沿著此分割預定線將晶圓分割。 In an electronic device typified by a mobile phone and a personal computer, an element chip having an electronic circuit (component) has become an essential component. The element wafer can be manufactured, for example, by dividing a surface of a wafer formed of a semiconductor material such as germanium into a plurality of predetermined lines (streets), and forming electronic circuits in respective regions. After that, the wafer is divided along the dividing line.
近年來,以元件晶片的小型化、輕量化等為目的,藉由如上述之磨削晶圓等之方法來進行薄化加工的機會正逐漸增加。例如,若使用在晶圓之表面側上形成深度相當於元件晶片的成品厚度的分割溝,且磨削背面側以使分割溝顯露出之DBG(Dicing Before Grinding,切割後研磨),就能夠將晶圓一邊薄化加工一邊分割成複數個元件晶片(參照例如專利文獻1及專利文獻2)。 In recent years, for the purpose of miniaturization and weight reduction of component wafers, opportunities for thinning processing by methods such as grinding wafers described above are increasing. For example, if a dividing groove having a thickness corresponding to the thickness of the finished product of the element wafer is formed on the surface side of the wafer, and the back side is ground to make the dividing groove appear DBG (Dicing Before Grinding), it is possible to The wafer is divided into a plurality of element wafers while being thinned (see, for example, Patent Document 1 and Patent Document 2).
但是,將晶圓藉由磨削來薄化時,會在作為被磨 削面之背面產生磨削應變,而導致元件晶片的抗折強度降低。於是,在磨削晶圓後,會藉由CMP(Chemical Mechanical Polishing,化學機械研磨)等之方法來研磨晶圓以去除磨削應變。 However, when the wafer is thinned by grinding, it will be worn as The back side of the facet produces a grinding strain, which causes the bending strength of the component wafer to decrease. Then, after the wafer is ground, the wafer is polished by a method such as CMP (Chemical Mechanical Polishing) to remove the grinding strain.
先前技術文獻 Prior technical literature 專利文獻 Patent literature
專利文獻1:日本專利特開昭62-4341號公報 Patent Document 1: Japanese Patent Laid-Open No. 62-4341
專利文獻2:日本專利特開2000-21820號公報 Patent Document 2: Japanese Patent Laid-Open No. 2000-21820
發明概要 Summary of invention
但是,當以CMP來研磨經上述之DBG所磨削、分割後之晶圓時,包含在研磨液中的游離磨粒會侵入分割溝而附著於元件晶片之側面。一旦磨粒附著於元件晶片之側面,就會導致在其後之步驟中變得容易發生不良情形。 However, when the wafer which has been ground and divided by the above-described DBG is polished by CMP, the free abrasive grains contained in the polishing liquid penetrate the dividing groove and adhere to the side surface of the element wafer. Once the abrasive particles are attached to the side of the component wafer, it becomes liable to cause a problem in the subsequent steps.
本發明是有鑒於所述之問題點而作成的發明,其目的為提供一種防止磨粒對元件晶片的附著之被加工物的加工方法。 The present invention has been made in view of the above problems, and an object thereof is to provide a method for processing a workpiece to prevent adhesion of abrasive grains to an element wafer.
依據本發明,可提供一種被加工物的加工方法,是沿著分割預定線將板狀之被加工物分割成複數個元件晶片,該被加工物的加工方法的特徵在於具備:分割步驟,從該被加工物之表面沿著該分割預定線形成深度相當於該元件晶片的成品厚度的分割溝,並磨削該 被加工物之背面使該分割溝顯露於該背面側,藉此將該被加工物分割成一個個的該元件晶片;以及研磨步驟,在實施該分割步驟之後,藉由一邊對該被加工物供給未含有磨粒之研磨液,一邊使用含有磨粒之研磨墊來研磨該被加工物之背面,以去除該被加工物之該背面的磨削應變,並且將已分割成一個個的該元件晶片之邊緣部加工成曲面狀。 According to the present invention, there is provided a method of processing a workpiece, wherein the sheet-shaped workpiece is divided into a plurality of element wafers along a line to be divided, and the method for processing the workpiece is characterized by: a dividing step, The surface of the workpiece forms a dividing groove having a depth corresponding to the thickness of the finished product of the component wafer along the dividing line, and grinding the surface a groove on the back surface of the workpiece to be exposed on the back side, thereby dividing the workpiece into individual component wafers; and a polishing step, after performing the dividing step, by processing the workpiece The polishing liquid containing no abrasive grains is supplied, and the back surface of the workpiece is polished using a polishing pad containing abrasive grains to remove the grinding strain of the back surface of the workpiece, and the component is divided into individual pieces. The edge portion of the wafer is processed into a curved shape.
在本發明中,較理想的是,更具備去疵(gettering)層形成步驟,該去疵層形成步驟是在實施該研磨步驟之後,在該被加工物之該背面形成去疵層。 In the present invention, it is preferable to further provide a gettering layer forming step of forming a deburring layer on the back surface of the workpiece after the grinding step.
又,在本發明中,較理想的是,該研磨墊的硬度(Asker-C)為55度~90度,該研磨墊的壓縮率為2%~15%,包含於該研磨墊中的該磨粒之材質為鑽石、綠碳化矽(Green Carborundum)、白剛鋁石(White Alundum)、氧化鈰(ceria)或氧化鋯,包含於該研磨墊中的該磨粒之粒徑為0.01μm~10μm。 Moreover, in the present invention, it is preferable that the hardness (Asker-C) of the polishing pad is 55 to 90 degrees, and the compression ratio of the polishing pad is 2% to 15%, which is included in the polishing pad. The abrasive grain is made of diamond, green carburundum, white Alundum, ceria or zirconia, and the particle size of the abrasive grain contained in the polishing pad is 0.01 μm. 10 μm.
又,在本發明中,較理想的是,該研磨液為鹼性溶液。 Further, in the invention, it is preferred that the polishing liquid is an alkaline solution.
在本發明之被加工物的加工方法中,由於在研磨步驟中,一邊對被加工物供給未含有磨粒的研磨液一邊使用含有磨粒的研磨墊來研磨被加工物,所以不會有像使用含有磨粒的研磨液之以往的方法一般,磨粒附著在元件晶片之側面的情形。 In the method of processing a workpiece according to the present invention, the workpiece is supplied with a polishing pad containing abrasive grains while the polishing liquid containing no abrasive grains is supplied to the workpiece in the polishing step, so that the workpiece is not polished. A conventional method using a polishing liquid containing abrasive grains generally has a case where abrasive grains are attached to the side surface of the element wafer.
又,在本發明之被加工物的加工方法中,於研磨步驟中,由於是將元件晶片的邊緣部加工成曲面狀,所以能夠充分地提高元件晶片的抗折強度。 Moreover, in the processing method of the workpiece according to the present invention, since the edge portion of the element wafer is processed into a curved shape in the polishing step, the bending strength of the element wafer can be sufficiently improved.
2‧‧‧切削裝置 2‧‧‧Cutting device
4、14、34‧‧‧工作夾台 4,14,34‧‧‧Working table
6‧‧‧切削單元 6‧‧‧Cutting unit
8、18、38‧‧‧主軸殼體 8, 18, 38‧‧‧ spindle housing
10‧‧‧切削刀片 10‧‧‧Cutting inserts
11‧‧‧被加工物 11‧‧‧Processed objects
11a‧‧‧表面 11a‧‧‧ surface
11b‧‧‧背面 11b‧‧‧Back
12‧‧‧磨削裝置 12‧‧‧ grinding device
13‧‧‧元件 13‧‧‧ components
14a、34a‧‧‧保持面 14a, 34a‧‧‧ Keep face
15‧‧‧分割溝 15‧‧‧dividing trench
16‧‧‧磨削單元 16‧‧‧ grinding unit
17‧‧‧元件晶片 17‧‧‧Component chip
17a‧‧‧邊緣部 17a‧‧‧Edge
20、40‧‧‧主軸 20, 40‧‧‧ spindle
21‧‧‧保護構件 21‧‧‧Protection components
21a‧‧‧第1面 21a‧‧‧1st
21b‧‧‧第2面 21b‧‧‧2nd
22、42‧‧‧安裝座 22, 42‧‧‧ Mounting
24‧‧‧磨削輪 24‧‧‧ grinding wheel
26‧‧‧輪基台 26‧‧‧ wheel base
28‧‧‧磨削磨石 28‧‧‧ grinding grinding stone
32‧‧‧研磨裝置 32‧‧‧ grinding device
36‧‧‧研磨單元 36‧‧‧grinding unit
44‧‧‧研磨墊 44‧‧‧ polishing pad
圖1是示意地顯示在分割步驟中,在被加工物上形成分割溝之情形的立體圖。 Fig. 1 is a perspective view schematically showing a state in which a dividing groove is formed on a workpiece in the dividing step.
圖2是示意地顯示在分割步驟中,在被加工物上貼附保護構件之情形的立體圖。 Fig. 2 is a perspective view schematically showing a state in which a protective member is attached to a workpiece in the dividing step.
圖3(A)及圖3(B)是示意地顯示在分割步驟中,磨削被加工物之情形的局部剖面側視圖。 3(A) and 3(B) are partial cross-sectional side views schematically showing a state in which a workpiece is ground in the dividing step.
圖4(A)是示意地顯示研磨步驟的局部剖面側視圖,圖4(B)是示意地顯示研磨步驟後之被加工物的剖面圖。 4(A) is a partial cross-sectional side view schematically showing a polishing step, and FIG. 4(B) is a cross-sectional view schematically showing the workpiece after the polishing step.
用以實施發明之形態 Form for implementing the invention
參照附圖,說明本發明的實施形態。本實施形態之被加工物的加工方法包含分割步驟(參照圖1、圖2、圖3(A)及圖3(B))、研磨步驟(參照圖4(A)及圖4(B))及去疵(gettering)層形成步驟。 Embodiments of the present invention will be described with reference to the drawings. The processing method of the workpiece according to the embodiment includes a dividing step (see FIGS. 1, 2, 3 (A), and 3 (B)) and a polishing step (see FIGS. 4(A) and 4(B)). And a gettering layer forming step.
在分割步驟中,是在從被加工物之表面沿著分割預定線(切割道)形成深度相當於元件晶片的成品厚度的分割溝後,磨削被加工物之背面來使分割溝顯露於背面側。藉此,被加工物被薄化加工,並分割成複數個元件晶片。 In the dividing step, after forming a dividing groove having a depth corresponding to the thickness of the finished product of the element wafer from the surface of the workpiece along the dividing line (cutting line), the back surface of the workpiece is ground to expose the dividing groove to the back surface. side. Thereby, the workpiece is thinned and divided into a plurality of component wafers.
在研磨步驟中,是一邊對被加工物供給未含有磨粒之研磨液一邊使用含有磨粒之研磨墊來研磨被加工物之 背面。藉此,被加工物之背面的磨削應變會被去除,且進一步將元件晶片之邊緣部加工成曲面狀。在去疵層形成步驟中,是在被加工物的背面形成去疵層。以下,詳細敘述本實施形態之被加工物的加工方法。 In the polishing step, the workpiece is supplied with a polishing pad containing abrasive grains while supplying a polishing liquid containing no abrasive grains to the workpiece. back. Thereby, the grinding strain on the back surface of the workpiece is removed, and the edge portion of the element wafer is further processed into a curved shape. In the de-layering step, a de-ruthenium layer is formed on the back surface of the workpiece. Hereinafter, a method of processing the workpiece according to the embodiment will be described in detail.
首先,實施將被加工物分割成複數個元件晶片之分割步驟。圖1是示意地顯示在分割步驟中,在被加工物上形成分割溝之情形的立體圖,圖2是示意地顯示在分割步驟中,在被加工物上貼附保護構件之情形的立體圖,圖3(A)及圖3(B)是示意地顯示在分割步驟中,磨削被加工物之情形的局部剖面側視圖。 First, a dividing step of dividing a workpiece into a plurality of component wafers is performed. 1 is a perspective view schematically showing a state in which a dividing groove is formed on a workpiece in the dividing step, and FIG. 2 is a perspective view schematically showing a state in which a protective member is attached to a workpiece in the dividing step. 3(A) and 3(B) are partial cross-sectional side views schematically showing a state in which the workpiece is ground in the dividing step.
如圖1所示,本實施形態之被加工物11為例如以矽等之半導體材料形成的圓盤狀之晶圓,並將其表面11a側區分為中央的元件區域、和包圍元件區域的外周剩餘區域。元件區域會以排列成格子狀的複數條分割預定線(切割道)進一步劃分成複數個區域,且在各個區域中形成有IC、LSI等元件13。 As shown in Fig. 1, the workpiece 11 of the present embodiment is, for example, a disk-shaped wafer formed of a semiconductor material such as tantalum, and the surface 11a side is divided into a central element region and a peripheral portion surrounding the element region. The remaining area. The element region is further divided into a plurality of regions by a plurality of predetermined dividing lines (cutting streets) arranged in a lattice shape, and elements 13 such as ICs and LSIs are formed in the respective regions.
再者,在本實施形態中,雖然是使用矽等之半導體材料所形成之晶圓作為被加工物11,但是並未限制被加工物11之材質、形狀等。也可以使用例如陶瓷、樹脂、金屬等的材料所形成之基板作為被加工物11。同樣地,也未限制分割預定線之配置及元件13之種類等。 In the present embodiment, a wafer formed of a semiconductor material such as tantalum is used as the workpiece 11, but the material, shape, and the like of the workpiece 11 are not limited. A substrate formed of a material such as ceramic, resin, or metal may be used as the workpiece 11. Similarly, the arrangement of the dividing line and the type of the component 13 are not limited.
在本實施形態之分割步驟中,首先,是在此被加工物11之表面11a側形成分割溝。分割溝是使用例如圖1所示之切削裝置2來形成。切削裝置2具備有吸引、保持被加 工物11的工作夾台4。工作夾台4是與馬達等的旋轉驅動源(圖未示)連結,並繞著與鉛直方向大致平行的旋轉軸旋轉。 In the dividing step of the present embodiment, first, a dividing groove is formed on the surface 11a side of the workpiece 11. The dividing groove is formed using, for example, the cutting device 2 shown in Fig. 1. The cutting device 2 is provided with attraction and retention The working table 4 of the work object 11. The work chuck 4 is coupled to a rotational drive source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction.
又,工作夾台4的下方設置有工作台移動機構(圖未示),工作夾台4是藉此工作台移動機構而在水平方向上移動。工作夾台4之上表面是形成為吸引、保持被加工物11之背面11b側的保持面。在此保持面上,是通過形成於工作夾台4的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用,而產生用於吸引被加工物11的吸引力。 Further, a table moving mechanism (not shown) is provided below the work chuck 4, and the work chuck 4 is moved in the horizontal direction by the table moving mechanism. The upper surface of the work chuck 4 is a holding surface formed to attract and hold the back surface 11b side of the workpiece 11. On the holding surface, a suction force (not shown) or the like is formed in a flow path (not shown) formed inside the work chuck 4 to generate an attraction force for attracting the workpiece 11. .
在工作夾台4的上方配置有切削被加工物11的切削單元6。切削單元6具備有被支撐於切削單元移動機構(圖未示)的主軸殼體8。在主軸殼體8的內部收容有與馬達等的旋轉驅動源(圖未示)連結之主軸(圖未示)。 A cutting unit 6 that cuts the workpiece 11 is disposed above the work chuck 4 . The cutting unit 6 is provided with a spindle housing 8 that is supported by a cutting unit moving mechanism (not shown). A spindle (not shown) that is coupled to a rotary drive source (not shown) such as a motor is housed inside the spindle housing 8.
主軸是藉由從旋轉驅動源所傳達的旋轉力而繞著與水平方向大致平行的旋轉軸旋轉,且藉由切削單元移動機構而與主軸殼體8一起移動。又,主軸的一端部會露出於主軸殼體8的外部。於此主軸的一端部上裝設有圓環狀的切削刀片10。 The main shaft is rotated about a rotation axis substantially parallel to the horizontal direction by a rotational force transmitted from the rotational drive source, and is moved together with the spindle housing 8 by the cutting unit moving mechanism. Further, one end portion of the main shaft is exposed to the outside of the spindle housing 8. An annular cutting insert 10 is mounted on one end of the main shaft.
在形成分割溝時,首先,是使被加工物11之背面11b接觸於工作夾台4之保持面,並使吸引源之負壓作用。藉此,被加工物11就能在表面11a露出於上方的狀態下被吸引、保持在工作夾台4上。 When the division groove is formed, first, the back surface 11b of the workpiece 11 is brought into contact with the holding surface of the work chuck 4, and the suction force of the suction source acts. Thereby, the workpiece 11 can be sucked and held on the work table 4 with the surface 11a exposed upward.
其次,使工作夾台4與切削刀片10相對地移動、旋轉,將切削刀片10對準於與加工對象的分割預定線對應的位置。之後,讓已使其旋轉的切削刀片10下降至相當於 元件晶片的成品厚度的高度上,並使工作夾台4在與加工對象的分割預定線平行的方向上移動。 Next, the work chuck 4 is moved and rotated relative to the cutting insert 10, and the cutting insert 10 is aligned at a position corresponding to the planned dividing line of the machining target. After that, let the cutting insert 10 that has been rotated down to the equivalent The height of the finished product of the component wafer is moved, and the work chuck 4 is moved in a direction parallel to the planned dividing line of the processing object.
藉此,可以沿著加工對象之分割預定線切削被加工物11之表面11a側,形成深度相當於元件晶片的成品厚度之的分割溝15。當重覆此工序,而沿著全部的分割預定線都形成分割溝15後,分割溝的形成步驟即結束。 Thereby, the surface 11a side of the workpiece 11 can be cut along the planned dividing line of the object to be processed, and the dividing groove 15 having a depth corresponding to the thickness of the finished product of the element wafer can be formed. When the process is repeated and the dividing grooves 15 are formed along all the planned dividing lines, the step of forming the dividing grooves ends.
在被加工物11上形成分割溝15之後,如圖2所示,將保護構件21貼附於被加工物11之表面11a側上。保護構件21可為例如與被加工物11大致相同形狀的黏著膠帶、樹脂基板、與被加工物11相同種類或相異種類之晶圓等,且在其第1面21a側上設有以接著劑等所形成之接著層。 After the dividing groove 15 is formed on the workpiece 11, the protective member 21 is attached to the surface 11a side of the workpiece 11 as shown in FIG. The protective member 21 may be, for example, an adhesive tape having substantially the same shape as the workpiece 11 , a resin substrate, a wafer of the same type or a different type as the workpiece 11 , and the like on the first surface 21 a side thereof. The adhesive layer formed by the agent or the like.
據此,藉由使保護構件21之第1面21a側接觸於被加工物11之表面11a側,就能將保護構件21貼附於被加工物11上。藉由像這樣將保護構件21貼附於被加工物11上,就能防止磨削時施加之荷重等所造成的元件13之破損。 As a result, the protective member 21 can be attached to the workpiece 11 by bringing the first surface 21a side of the protective member 21 into contact with the surface 11a side of the workpiece 11. By attaching the protective member 21 to the workpiece 11 as described above, it is possible to prevent breakage of the element 13 due to the load applied during grinding or the like.
將保護構件21貼附至被加工物11之後,會磨削被加工物11之背面11b來使分割溝15顯露出來。加工物11之磨削是以例如圖3(A)及圖3(B)所示之磨削裝置12來實施。磨削裝置12具備有吸引、保持被加工物11的工作夾台14。 After the protective member 21 is attached to the workpiece 11, the back surface 11b of the workpiece 11 is ground to expose the division groove 15. The grinding of the workpiece 11 is carried out, for example, by the grinding device 12 shown in Figs. 3(A) and 3(B). The grinding device 12 is provided with a work chuck 14 that sucks and holds the workpiece 11 .
工作夾台14是與馬達等的旋轉驅動源(圖未示)連結,並繞著與鉛直方向大致平行的旋轉軸旋轉。又,工作夾台14的下方設置有工作台移動機構(圖未示),工作夾台14是藉此工作台移動機構而在水平方向上移動。 The work chuck 14 is coupled to a rotational drive source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a table moving mechanism (not shown) is provided below the work chuck 14, and the work table 14 is moved in the horizontal direction by the table moving mechanism.
工作夾台14之上表面會成為吸引、保持已貼附於 被加工物11之保護構件21之第2面21b側的保持面14a。在此保持面14a上,是通過形成於工作夾台14的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用,而產生用於吸引保護構件21的吸引力。 The upper surface of the work clamp 14 will become attractive and remain attached to The holding surface 14a on the second surface 21b side of the protective member 21 of the workpiece 11. In the holding surface 14a, a suction force (not shown) or the like is formed in a flow path (not shown) formed inside the working chuck 14 to generate an attraction force for attracting the protective member 21. .
工作夾台14的上方配置有磨削單元16。磨削單元16具備有被支撐在磨削單元升降機構(圖未示)的主軸殼體18。在主軸殼體18中收容有主軸20,且在主軸20之下端部固定有圓盤狀之安裝座22。 A grinding unit 16 is disposed above the work chuck 14 . The grinding unit 16 is provided with a spindle housing 18 that is supported by a grinding unit lifting mechanism (not shown). A spindle 20 is housed in the spindle housing 18, and a disk-shaped mount 22 is fixed to the lower end of the spindle 20.
在安裝座22之下表面裝設有與安裝座22大致相同直徑的磨削輪24。磨削輪24具備有以不銹鋼、鋁等金屬材料所形成的輪基台26。輪基台26的下表面,環狀地配置排列有複數個磨削磨石28。 A grinding wheel 24 having substantially the same diameter as the mounting seat 22 is mounted on the lower surface of the mount 22. The grinding wheel 24 is provided with a wheel base 26 formed of a metal material such as stainless steel or aluminum. On the lower surface of the wheel base 26, a plurality of grinding stones 28 are arranged in an annular shape.
在主軸20的上端側(基端側)連結有馬達等的旋轉驅動源(圖未示)。磨削輪24是藉由從這個旋轉驅動源所傳達的旋轉力而繞著與鉛直方向大致平行的旋轉軸旋轉。 A rotary drive source (not shown) such as a motor is coupled to the upper end side (base end side) of the main shaft 20. The grinding wheel 24 is rotated about a rotation axis substantially parallel to the vertical direction by a rotational force transmitted from this rotational drive source.
在磨削被加工物11之背面11b側時,首先,是使已貼附於被加工物11之保護構件21之第2面21b接觸於工作夾台14之保持面14a,並使吸引源之負壓作用。藉此,被加工物11就能在背面11b側露出於上方的狀態下被吸引、保持在工作夾台14上。 When the back surface 11b side of the workpiece 11 is ground, first, the second surface 21b of the protective member 21 attached to the workpiece 11 is brought into contact with the holding surface 14a of the work chuck 14, and the suction source is provided. Negative pressure. Thereby, the workpiece 11 can be sucked and held on the work chuck 14 in a state where the back surface 11b side is exposed upward.
其次,使工作夾台14移動至磨削輪24的下方。然後,如圖3(A)所示,使工作夾台14與磨削輪24各自旋轉,且一邊供給純水等之磨削液一邊使主軸殼體18下降。將主軸殼體18的下降量調整成使磨削磨石28之下表面被推抵在 被加工物11之背面11b之程度。藉此,就能磨削被加工物11之背面11b側。 Next, the work chuck 14 is moved below the grinding wheel 24. Then, as shown in FIG. 3(A), the work chuck 14 and the grinding wheel 24 are each rotated, and the spindle housing 18 is lowered while supplying a grinding fluid such as pure water. The amount of lowering of the spindle housing 18 is adjusted such that the lower surface of the grinding stone 28 is pushed against The extent of the back surface 11b of the workpiece 11. Thereby, the back surface 11b side of the workpiece 11 can be ground.
此磨削是例如邊測量被加工物11之厚度邊進行。如圖3(B)所示,一旦被加工物11薄化至成品厚度且使分割溝15顯露於背面11b側時,分割步驟即結束。藉由此分割步驟,可將被加工物11分割成複數個對應於各個元件13的元件晶片17。 This grinding is performed, for example, while measuring the thickness of the workpiece 11. As shown in FIG. 3(B), when the workpiece 11 is thinned to the thickness of the finished product and the dividing groove 15 is exposed on the side of the back surface 11b, the dividing step is completed. By this division step, the workpiece 11 can be divided into a plurality of component wafers 17 corresponding to the respective elements 13.
在分割步驟後,會實施研磨被加工物11之背面11b的研磨步驟。圖4(A)是示意地顯示研磨步驟的局部剖面側視圖。研磨步驟是以例如圖4(A)所示之研磨裝置32來實施。研磨裝置32具備有吸引、保持被加工物11的工作夾台34。 After the dividing step, a grinding step of grinding the back surface 11b of the workpiece 11 is performed. Fig. 4 (A) is a partial cross-sectional side view schematically showing a grinding step. The polishing step is carried out, for example, by the polishing apparatus 32 shown in Fig. 4(A). The polishing apparatus 32 is provided with a work chuck 34 that sucks and holds the workpiece 11.
工作夾台34是與馬達等的旋轉驅動源(圖未示)連結,並繞著與鉛直方向大致平行的旋轉軸旋轉。又,工作夾台34的下方設置有工作台移動機構(圖未示),工作夾台34是藉此工作台移動機構而在水平方向上移動。 The work chuck 34 is coupled to a rotational drive source (not shown) such as a motor, and is rotated about a rotation axis substantially parallel to the vertical direction. Further, a table moving mechanism (not shown) is provided below the work chuck 34, and the work table 34 is moved in the horizontal direction by the table moving mechanism.
工作夾台34之上表面會成為吸引、保持已貼附於被加工物11之保護構件21之第2面21b側的保持面34a。在此保持面34a上,是通過形成於工作夾台34的內部的流路(圖未示)等使吸引源(圖未示)的負壓作用,而產生用於吸引保護構件21的吸引力。 The upper surface of the work chuck 34 serves as a holding surface 34a that sucks and holds the second surface 21b side of the protective member 21 attached to the workpiece 11. In the holding surface 34a, a suction force (not shown) or the like is formed in a flow path (not shown) formed inside the working chuck 34 to generate an attraction force for attracting the protective member 21. .
工作夾台34的上方配置有研磨單元36。研磨單元36具備有被支撐在研磨單元升降機構(圖未示)的主軸殼體38。在主軸殼體38中收容有主軸40,且在主軸40之下端部 固定有圓盤狀之安裝座42。 A polishing unit 36 is disposed above the work chuck 34. The polishing unit 36 is provided with a spindle housing 38 that is supported by a polishing unit elevating mechanism (not shown). A spindle 40 is housed in the spindle housing 38 and at the lower end of the spindle 40 A disc-shaped mount 42 is fixed.
在安裝座42之下表面裝設有與安裝座42大致相同直徑的研磨墊44。此研磨墊44是以例如不織布或發泡胺甲酸乙酯等所形成的研磨布、和固定於研磨布上之磨粒所構成。研磨墊44的厚度為例如3mm以上,且在研磨墊44的下表面(研磨面)之整體上,以格子狀的方式形成有深度為2.5mm以上的溝。 A polishing pad 44 having substantially the same diameter as the mount 42 is mounted on the lower surface of the mount 42. The polishing pad 44 is composed of a polishing cloth formed of, for example, non-woven fabric or foamed urethane, and abrasive grains fixed to the polishing cloth. The thickness of the polishing pad 44 is, for example, 3 mm or more, and a groove having a depth of 2.5 mm or more is formed in a lattice shape on the entire lower surface (polishing surface) of the polishing pad 44.
研磨墊44的硬度(Asker-C)宜為55度~90度,且研磨墊44的壓縮率宜為2%~15%。再者,壓縮率是將已施加300g/cm2的荷重之情形下的研磨墊44之厚度設為t1,並將已施加2000g/cm2的荷重之情形下的研磨墊44之厚度設為t2,藉(t1-t2)/t1×100而求得。藉由將研磨墊44的壓縮率設為2%~15%,就能維持高的研磨率並且抑制被加工物11之邊緣的缺損。 The hardness (Asker-C) of the polishing pad 44 is preferably 55 to 90 degrees, and the compression ratio of the polishing pad 44 is preferably 2% to 15%. Further, the compression ratio is a thickness of the polishing pad 44 in the case where a load of 300 g/cm 2 has been applied, and the thickness of the polishing pad 44 in the case where a load of 2000 g/cm 2 has been applied is set to t2. , obtained by (t1-t2)/t1×100. By setting the compression ratio of the polishing pad 44 to 2% to 15%, it is possible to maintain a high polishing rate and suppress the defect of the edge of the workpiece 11.
又,磨粒的材質為例如鑽石、綠碳化矽(Green Carborundum)、白剛鋁石(White Alundum)、氧化鈰或氧化鋯等,且磨粒的粒徑為例如0.01μm~10μm,較理想的是0.1μm~2μm。然而,磨粒的材質或磨粒的粒徑是可以因應被加工物11的材質等而任意地變更的。 Further, the material of the abrasive grains is, for example, diamond, green carborundum, white Alundum, cerium oxide or zirconium oxide, and the particle diameter of the abrasive grains is, for example, 0.01 μm to 10 μm, which is preferable. It is 0.1 μm to 2 μm. However, the material of the abrasive grains or the particle diameter of the abrasive grains can be arbitrarily changed in accordance with the material of the workpiece 11 or the like.
在主軸40的上端側(基端側)連結有馬達等的旋轉驅動源(圖未示)。研磨墊44是藉由從這個旋轉驅動源所傳達的旋轉力而繞著與鉛直方向大致平行的旋轉軸旋轉。 A rotary drive source (not shown) such as a motor is coupled to the upper end side (base end side) of the main shaft 40. The polishing pad 44 is rotated about a rotation axis substantially parallel to the vertical direction by a rotational force transmitted from this rotational drive source.
在研磨被加工物11之背面11b時,首先,是使已貼附於被加工物11之保護構件21之第2面21b接觸於工作夾 台34之保持面34a,並使吸引源之負壓作用。藉此,被加工物11就能在背面11b側露出於上方的狀態下被吸引、保持在工作夾台34上。 When the back surface 11b of the workpiece 11 is ground, first, the second surface 21b of the protective member 21 attached to the workpiece 11 is brought into contact with the work clip. The holding surface 34a of the stage 34 acts on the negative pressure of the suction source. Thereby, the workpiece 11 can be sucked and held on the work chuck 34 in a state where the back surface 11b side is exposed upward.
其次,使工作夾台34移動至研磨墊44的下方。然後,如圖4(A)所示,使工作夾台34及研磨墊44各自旋轉,且一邊供給研磨液一邊使主軸殼體38下降。將主軸殼體38的下降量調整成使研磨墊44之下表面(研磨面)被推抵在被加工物11之背面11b之程度。藉此,就能研磨被加工物11之背面11b而去除磨削應變。 Next, the work chuck 34 is moved below the polishing pad 44. Then, as shown in FIG. 4(A), the working chuck 34 and the polishing pad 44 are each rotated, and the spindle housing 38 is lowered while supplying the polishing liquid. The amount of lowering of the spindle housing 38 is adjusted such that the lower surface (polishing surface) of the polishing pad 44 is pushed against the back surface 11b of the workpiece 11. Thereby, the back surface 11b of the workpiece 11 can be ground to remove the grinding strain.
作為研磨液,可使用例如未含有磨粒的鹼性溶液。這是因為如果研磨液中含有磨粒,會使磨粒變得容易殘留於已顯露於背面11b側的分割溝15中。在本實施形態中,由於使用含有磨粒的研磨墊44,所以即使研磨液未含有磨粒仍然能夠適當地研磨被加工物11。再者,作為鹼性溶液,能夠使用的有氫氧化鉀、氫氧化鈉、四甲基氫氧化銨(TMAH)、碳酸鉀、碳酸氫鈉、碳酸氫鉀等。 As the polishing liquid, for example, an alkaline solution containing no abrasive grains can be used. This is because if the polishing liquid contains abrasive grains, the abrasive grains are likely to remain in the dividing grooves 15 which are exposed on the side of the back surface 11b. In the present embodiment, since the polishing pad 44 containing the abrasive grains is used, the workpiece 11 can be appropriately polished even if the polishing liquid does not contain the abrasive grains. Further, as the alkaline solution, potassium hydroxide, sodium hydroxide, tetramethylammonium hydroxide (TMAH), potassium carbonate, sodium hydrogencarbonate or potassium hydrogencarbonate can be used.
圖4(B)是示意地顯示研磨步驟後之被加工物11的剖面圖。在本實施形態的研磨步驟中,由於如上述地使用未含有磨粒的研磨液來研磨被加工物11,所以不會有磨粒附著在相當於分割溝15之元件晶片17的側面上的情形。又,在本實施形態的研磨步驟中,由於使用在下表面形成有溝之研磨墊44,所以能夠將邊緣部17a加工成曲面狀,而進一步提高元件晶片17的抗折強度。 Fig. 4 (B) is a cross-sectional view schematically showing the workpiece 11 after the polishing step. In the polishing step of the present embodiment, since the workpiece 11 is polished by using the polishing liquid containing no abrasive grains as described above, the abrasive grains do not adhere to the side surface of the element wafer 17 corresponding to the division groove 15. . Further, in the polishing step of the present embodiment, since the polishing pad 44 having the groove formed on the lower surface is used, the edge portion 17a can be processed into a curved shape, and the bending strength of the element wafer 17 can be further improved.
在研磨步驟之後,會實施在被加工物11之背面形 成去疵層的去疵層形成步驟。去疵層形成步驟是利用例如在研磨步驟中所使用的研磨裝置32,並用與研磨步驟同樣的方法來實施。然而,在此去疵層形成步驟中,是在不將研磨墊44的下表面(研磨面)推抵於被加工物11的背面11b的情形下來使其接觸。亦即,不會從研磨墊44對被加工物11施加壓力。 After the grinding step, it is carried out on the back side of the workpiece 11 The de-layering step of forming the de-ruthenium layer. The decarburization layer formation step is carried out by, for example, the polishing apparatus 32 used in the polishing step, and is carried out in the same manner as the polishing step. However, in the step of forming the ruthenium layer, the lower surface (polishing surface) of the polishing pad 44 is brought into contact without being pushed against the back surface 11b of the workpiece 11. That is, no pressure is applied to the workpiece 11 from the polishing pad 44.
像這樣,藉由利用研磨墊44僅稍微摩擦被加工物11之背面11b,可形成含有微細的應變的去疵層。藉由此去疵層,可以防止由金屬元素等所形成的元件13之污染。再者,在分割步驟中使所形成的磨削應變僅少許殘存,也能夠做成去疵層。在此情形下,就沒有必要在研磨步驟之後實施去疵層形成步驟。 As described above, by slightly rubbing the back surface 11b of the workpiece 11 by the polishing pad 44, a deburring layer containing fine strain can be formed. By removing the layer, the contamination of the element 13 formed of a metal element or the like can be prevented. Further, in the dividing step, the formed grinding strain is left only a little, and the debonding layer can also be formed. In this case, it is not necessary to carry out the de-layering step after the grinding step.
如以上所述,在本實施形態之被加工物的加工方法中,由於在研磨步驟中,一邊對被加工物11供給未含有磨粒的研磨液一邊使用含有磨粒的研磨墊44來研磨被加工物11,所以不會有像使用含有磨粒的研磨液之以往的方法一般,有磨粒附著在元件晶片17之側面的情形。 As described above, in the method of processing a workpiece according to the present embodiment, the polishing pad containing the abrasive grains is supplied to the workpiece 11 while the polishing liquid is not used, and the polishing pad 44 containing the abrasive grains is used for polishing. Since the workpiece 11 is processed, there is no conventional method in which a polishing liquid containing abrasive grains is used, and abrasive grains adhere to the side surface of the element wafer 17.
又,在本實施形態之被加工物的加工方法中,於研磨步驟中,由於是將元件晶片17的邊緣部17a加工成曲面狀,所以能夠充分地提高元件晶片17的抗折強度。 Further, in the method of processing a workpiece according to the present embodiment, since the edge portion 17a of the element wafer 17 is processed into a curved shape in the polishing step, the bending strength of the element wafer 17 can be sufficiently improved.
再者,本發明並不限定於上述實施形態之記載,可作各種變更而實施。又,上述實施形態之構造、方法等,只要在不脫離本發明的目的之範圍下,均可適當變更而實施。 Furthermore, the present invention is not limited to the description of the above embodiments, and can be implemented in various modifications. Further, the structures, methods, and the like of the above-described embodiments can be appropriately modified and implemented without departing from the scope of the invention.
2‧‧‧切削裝置 2‧‧‧Cutting device
4‧‧‧工作夾台 4‧‧‧Working table
6‧‧‧切削單元 6‧‧‧Cutting unit
8‧‧‧主軸殼體 8‧‧‧ spindle housing
10‧‧‧切削刀片 10‧‧‧Cutting inserts
11‧‧‧被加工物 11‧‧‧Processed objects
11a‧‧‧表面 11a‧‧‧ surface
11b‧‧‧背面 11b‧‧‧Back
13‧‧‧元件 13‧‧‧ components
15‧‧‧分割溝 15‧‧‧dividing trench

Claims (4)

  1. 一種被加工物的加工方法,是沿著分割預定線將板狀之被加工物分割成複數個元件晶片,該被加工物的加工方法的特徵在於具備:分割步驟,從該被加工物之表面沿著該分割預定線形成深度相當於該元件晶片的成品厚度的分割溝,並磨削該被加工物之背面使該分割溝顯露於該背面側,藉此將該被加工物分割成一個個的該元件晶片;以及研磨步驟,在實施該分割步驟之後,藉由一邊對該被加工物供給未含有磨粒之研磨液,一邊使用含有磨粒之研磨墊來研磨該被加工物之背面,以去除該被加工物之該背面的磨削應變,並且將已分割成一個個的該元件晶片之邊緣部加工成曲面狀。 A method for processing a workpiece is to divide a sheet-shaped workpiece into a plurality of component wafers along a predetermined dividing line, and the method for processing the workpiece includes a dividing step from a surface of the workpiece Forming a dividing groove having a depth corresponding to the thickness of the finished product of the element wafer along the dividing line, and grinding the back surface of the workpiece to expose the dividing groove to the back side, thereby dividing the workpiece into pieces And the polishing step, after the step of performing the dividing step, the back surface of the workpiece is polished by using a polishing pad containing abrasive grains by supplying a polishing liquid containing no abrasive grains to the workpiece. The grinding strain of the back surface of the workpiece is removed, and the edge portion of the element wafer that has been divided into individual pieces is processed into a curved shape.
  2. 如請求項1之被加工物的加工方法,更具備去疵層形成步驟,該去疵層形成步驟是在實施該研磨步驟之後,在該被加工物之該背面形成去疵層。 The method for processing a workpiece according to claim 1 further comprises a de-layering step of forming a de-ruthing layer on the back surface of the workpiece after the step of performing the step of removing the layer.
  3. 如請求項1或請求項2之被加工物的加工方法,其中,該研磨墊的硬度(Asker-C)為55度~90度,該研磨墊的壓縮率為2%~15%,包含在該研磨墊中的該磨粒之材質為鑽石、綠碳化矽(Green Carborundum)、白剛鋁石(White Alundum)、氧化鈰或氧化鋯,包含在該研磨墊中的該磨粒之粒徑為0.01μm~10μm。 The processing method of the workpiece according to claim 1 or claim 2, wherein the hardness (Asker-C) of the polishing pad is 55 to 90 degrees, and the compression ratio of the polishing pad is 2% to 15%, which is included in The abrasive grain in the polishing pad is made of diamond, green carburundum, white Alundum, yttria or zirconia, and the particle size of the abrasive grain contained in the polishing pad is 0.01μm~10μm.
  4. 如請求項1或2之被加工物的加工方法,其中,該研磨液 為鹼性溶液。 A method of processing a workpiece according to claim 1 or 2, wherein the slurry It is an alkaline solution.
TW105121235A 2015-08-03 2016-07-05 Workpiece processing method capable of preventing attachment of grains to a device chip TW201712746A (en)

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